---
_id: '6524'
abstract:
- lang: eng
text: We use a picosecond acoustics technique to modulate the laser output of electrically
pumped GaAs/AlAs micropillar lasers with InGaAs quantum dots. The modulation of
the emission wavelength takes place on the frequencies of the nanomechanical extensional
and breathing (radial) modes of the micropillars. The amplitude of the modulation
for various nanomechanical modes is different for every micropillar which is explained
by a various elastic contact between the micropillar walls and polymer environment.
article_number: '041103'
article_type: original
author:
- first_name: T.
full_name: Czerniuk, T.
last_name: Czerniuk
- first_name: J.
full_name: Tepper, J.
last_name: Tepper
- first_name: A. V.
full_name: Akimov, A. V.
last_name: Akimov
- first_name: S.
full_name: Unsleber, S.
last_name: Unsleber
- first_name: C.
full_name: Schneider, C.
last_name: Schneider
- first_name: M.
full_name: Kamp, M.
last_name: Kamp
- first_name: S.
full_name: Höfling, S.
last_name: Höfling
- first_name: D. R.
full_name: Yakovlev, D. R.
last_name: Yakovlev
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
citation:
ama: Czerniuk T, Tepper J, Akimov AV, et al. Impact of nanomechanical resonances
on lasing from electrically pumped quantum dot micropillars. Applied Physics
Letters. 2015;106(4). doi:10.1063/1.4906611
apa: Czerniuk, T., Tepper, J., Akimov, A. V., Unsleber, S., Schneider, C., Kamp,
M., … Bayer, M. (2015). Impact of nanomechanical resonances on lasing from electrically
pumped quantum dot micropillars. Applied Physics Letters, 106(4).
https://doi.org/10.1063/1.4906611
bibtex: '@article{Czerniuk_Tepper_Akimov_Unsleber_Schneider_Kamp_Höfling_Yakovlev_Bayer_2015,
title={Impact of nanomechanical resonances on lasing from electrically pumped
quantum dot micropillars}, volume={106}, DOI={10.1063/1.4906611},
number={4041103}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Czerniuk, T. and Tepper, J. and Akimov, A. V. and Unsleber, S. and Schneider,
C. and Kamp, M. and Höfling, S. and Yakovlev, D. R. and Bayer, M.}, year={2015}
}'
chicago: Czerniuk, T., J. Tepper, A. V. Akimov, S. Unsleber, C. Schneider, M. Kamp,
S. Höfling, D. R. Yakovlev, and M. Bayer. “Impact of Nanomechanical Resonances
on Lasing from Electrically Pumped Quantum Dot Micropillars.” Applied Physics
Letters 106, no. 4 (2015). https://doi.org/10.1063/1.4906611.
ieee: T. Czerniuk et al., “Impact of nanomechanical resonances on lasing
from electrically pumped quantum dot micropillars,” Applied Physics Letters,
vol. 106, no. 4, 2015.
mla: Czerniuk, T., et al. “Impact of Nanomechanical Resonances on Lasing from Electrically
Pumped Quantum Dot Micropillars.” Applied Physics Letters, vol. 106, no.
4, 041103, AIP Publishing, 2015, doi:10.1063/1.4906611.
short: T. Czerniuk, J. Tepper, A.V. Akimov, S. Unsleber, C. Schneider, M. Kamp,
S. Höfling, D.R. Yakovlev, M. Bayer, Applied Physics Letters 106 (2015).
date_created: 2019-01-09T09:07:33Z
date_updated: 2022-01-06T07:03:10Z
department:
- _id: '230'
doi: 10.1063/1.4906611
intvolume: ' 106'
issue: '4'
language:
- iso: eng
project:
- _id: '53'
name: TRR 142
- _id: '54'
name: TRR 142 - Project Area A
- _id: '63'
name: TRR 142 - Subproject A6
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Impact of nanomechanical resonances on lasing from electrically pumped quantum
dot micropillars
type: journal_article
user_id: '49428'
volume: 106
year: '2015'
...
---
_id: '39689'
article_number: '201114'
author:
- first_name: Markus
full_name: Wahle, Markus
last_name: Wahle
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Wahle M, Kitzerow H-S. Electrically tunable zero dispersion wavelengths in
photonic crystal fibers filled with a dual frequency addressable liquid crystal.
Applied Physics Letters. 2015;107(20). doi:10.1063/1.4936086
apa: Wahle, M., & Kitzerow, H.-S. (2015). Electrically tunable zero dispersion
wavelengths in photonic crystal fibers filled with a dual frequency addressable
liquid crystal. Applied Physics Letters, 107(20), Article 201114.
https://doi.org/10.1063/1.4936086
bibtex: '@article{Wahle_Kitzerow_2015, title={Electrically tunable zero dispersion
wavelengths in photonic crystal fibers filled with a dual frequency addressable
liquid crystal}, volume={107}, DOI={10.1063/1.4936086},
number={20201114}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Wahle, Markus and Kitzerow, Heinz-Siegfried}, year={2015} }'
chicago: Wahle, Markus, and Heinz-Siegfried Kitzerow. “Electrically Tunable Zero
Dispersion Wavelengths in Photonic Crystal Fibers Filled with a Dual Frequency
Addressable Liquid Crystal.” Applied Physics Letters 107, no. 20 (2015).
https://doi.org/10.1063/1.4936086.
ieee: 'M. Wahle and H.-S. Kitzerow, “Electrically tunable zero dispersion wavelengths
in photonic crystal fibers filled with a dual frequency addressable liquid crystal,”
Applied Physics Letters, vol. 107, no. 20, Art. no. 201114, 2015, doi:
10.1063/1.4936086.'
mla: Wahle, Markus, and Heinz-Siegfried Kitzerow. “Electrically Tunable Zero Dispersion
Wavelengths in Photonic Crystal Fibers Filled with a Dual Frequency Addressable
Liquid Crystal.” Applied Physics Letters, vol. 107, no. 20, 201114, AIP
Publishing, 2015, doi:10.1063/1.4936086.
short: M. Wahle, H.-S. Kitzerow, Applied Physics Letters 107 (2015).
date_created: 2023-01-24T18:11:41Z
date_updated: 2023-01-24T18:12:09Z
department:
- _id: '313'
- _id: '230'
- _id: '638'
doi: 10.1063/1.4936086
intvolume: ' 107'
issue: '20'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Electrically tunable zero dispersion wavelengths in photonic crystal fibers
filled with a dual frequency addressable liquid crystal
type: journal_article
user_id: '254'
volume: 107
year: '2015'
...
---
_id: '7224'
article_number: '241101'
author:
- first_name: J.
full_name: Repp, J.
last_name: Repp
- first_name: G. J.
full_name: Schinner, G. J.
last_name: Schinner
- first_name: E.
full_name: Schubert, E.
last_name: Schubert
- first_name: A. K.
full_name: Rai, A. K.
last_name: Rai
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: U.
full_name: Wurstbauer, U.
last_name: Wurstbauer
- first_name: J. P.
full_name: Kotthaus, J. P.
last_name: Kotthaus
- first_name: A. W.
full_name: Holleitner, A. W.
last_name: Holleitner
citation:
ama: Repp J, Schinner GJ, Schubert E, et al. Confocal shift interferometry of coherent
emission from trapped dipolar excitons. Applied Physics Letters. 2014;105(24).
doi:10.1063/1.4904222
apa: Repp, J., Schinner, G. J., Schubert, E., Rai, A. K., Reuter, D., Wieck, A.
D., … Holleitner, A. W. (2014). Confocal shift interferometry of coherent emission
from trapped dipolar excitons. Applied Physics Letters, 105(24).
https://doi.org/10.1063/1.4904222
bibtex: '@article{Repp_Schinner_Schubert_Rai_Reuter_Wieck_Wurstbauer_Kotthaus_Holleitner_2014,
title={Confocal shift interferometry of coherent emission from trapped dipolar
excitons}, volume={105}, DOI={10.1063/1.4904222},
number={24241101}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Repp, J. and Schinner, G. J. and Schubert, E. and Rai, A. K. and Reuter,
Dirk and Wieck, A. D. and Wurstbauer, U. and Kotthaus, J. P. and Holleitner, A.
W.}, year={2014} }'
chicago: Repp, J., G. J. Schinner, E. Schubert, A. K. Rai, Dirk Reuter, A. D. Wieck,
U. Wurstbauer, J. P. Kotthaus, and A. W. Holleitner. “Confocal Shift Interferometry
of Coherent Emission from Trapped Dipolar Excitons.” Applied Physics Letters
105, no. 24 (2014). https://doi.org/10.1063/1.4904222.
ieee: J. Repp et al., “Confocal shift interferometry of coherent emission
from trapped dipolar excitons,” Applied Physics Letters, vol. 105, no.
24, 2014.
mla: Repp, J., et al. “Confocal Shift Interferometry of Coherent Emission from Trapped
Dipolar Excitons.” Applied Physics Letters, vol. 105, no. 24, 241101, AIP
Publishing, 2014, doi:10.1063/1.4904222.
short: J. Repp, G.J. Schinner, E. Schubert, A.K. Rai, D. Reuter, A.D. Wieck, U.
Wurstbauer, J.P. Kotthaus, A.W. Holleitner, Applied Physics Letters 105 (2014).
date_created: 2019-01-29T12:19:14Z
date_updated: 2022-01-06T07:03:29Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.4904222
intvolume: ' 105'
issue: '24'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Confocal shift interferometry of coherent emission from trapped dipolar excitons
type: journal_article
user_id: '42514'
volume: 105
year: '2014'
...
---
_id: '7259'
article_number: '092401'
author:
- first_name: J. H.
full_name: Buß, J. H.
last_name: Buß
- first_name: J.
full_name: Rudolph, J.
last_name: Rudolph
- first_name: S.
full_name: Shvarkov, S.
last_name: Shvarkov
- first_name: F.
full_name: Semond, F.
last_name: Semond
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: D.
full_name: Hägele, D.
last_name: Hägele
citation:
ama: 'Buß JH, Rudolph J, Shvarkov S, et al. Magneto-optical studies of Gd-implanted
GaN: No spin alignment of conduction band electrons. Applied Physics Letters.
2013;103(9). doi:10.1063/1.4819767'
apa: 'Buß, J. H., Rudolph, J., Shvarkov, S., Semond, F., Reuter, D., Wieck, A. D.,
& Hägele, D. (2013). Magneto-optical studies of Gd-implanted GaN: No spin
alignment of conduction band electrons. Applied Physics Letters, 103(9).
https://doi.org/10.1063/1.4819767'
bibtex: '@article{Buß_Rudolph_Shvarkov_Semond_Reuter_Wieck_Hägele_2013, title={Magneto-optical
studies of Gd-implanted GaN: No spin alignment of conduction band electrons},
volume={103}, DOI={10.1063/1.4819767},
number={9092401}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Buß, J. H. and Rudolph, J. and Shvarkov, S. and Semond, F. and Reuter,
Dirk and Wieck, A. D. and Hägele, D.}, year={2013} }'
chicago: 'Buß, J. H., J. Rudolph, S. Shvarkov, F. Semond, Dirk Reuter, A. D. Wieck,
and D. Hägele. “Magneto-Optical Studies of Gd-Implanted GaN: No Spin Alignment
of Conduction Band Electrons.” Applied Physics Letters 103, no. 9 (2013).
https://doi.org/10.1063/1.4819767.'
ieee: 'J. H. Buß et al., “Magneto-optical studies of Gd-implanted GaN: No
spin alignment of conduction band electrons,” Applied Physics Letters,
vol. 103, no. 9, 2013.'
mla: 'Buß, J. H., et al. “Magneto-Optical Studies of Gd-Implanted GaN: No Spin Alignment
of Conduction Band Electrons.” Applied Physics Letters, vol. 103, no. 9,
092401, AIP Publishing, 2013, doi:10.1063/1.4819767.'
short: J.H. Buß, J. Rudolph, S. Shvarkov, F. Semond, D. Reuter, A.D. Wieck, D. Hägele,
Applied Physics Letters 103 (2013).
date_created: 2019-01-30T12:56:20Z
date_updated: 2022-01-06T07:03:30Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.4819767
intvolume: ' 103'
issue: '9'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: 'Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction
band electrons'
type: journal_article
user_id: '42514'
volume: 103
year: '2013'
...
---
_id: '3963'
abstract:
- lang: eng
text: "Whispering gallery modes (WGMs) were observed in 60 nm thin cubic AlN microdisk
resonators containing a single layer of non-polar cubic GaN quantum dots. Freestanding
microdisks were patterned by means of electron beam lithography and a two step
reactive ion etching process. Micro-photoluminescence spectroscopy investigations
were performed for optical characterization. We analyzed the mode spacing for
disk diameters ranging from 2-4 lm. Numerical investigations using three dimensional
finite difference time domain calculations were in good agreement\r\nwith the
experimental data. Whispering gallery modes of the radial orders 1 and 2 were
identified by means of simulated mode field distributions."
article_type: original
author:
- first_name: M.
full_name: Bürger, M.
last_name: Bürger
- first_name: M.
full_name: Ruth, M.
last_name: Ruth
- first_name: S.
full_name: Declair, S.
last_name: Declair
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Bürger M, Ruth M, Declair S, Förstner J, Meier C, As DJ. Whispering gallery
modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots. Applied
Physics Letters. 2013;102(8):081105. doi:10.1063/1.4793653
apa: Bürger, M., Ruth, M., Declair, S., Förstner, J., Meier, C., & As, D. J.
(2013). Whispering gallery modes in zinc-blende AlN microdisks containing non-polar
GaN quantum dots. Applied Physics Letters, 102(8), 081105. https://doi.org/10.1063/1.4793653
bibtex: '@article{Bürger_Ruth_Declair_Förstner_Meier_As_2013, title={Whispering
gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots},
volume={102}, DOI={10.1063/1.4793653},
number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Bürger,
M. and Ruth, M. and Declair, S. and Förstner, Jens and Meier, Cedrik and As, Donat
Josef}, year={2013}, pages={081105} }'
chicago: 'Bürger, M., M. Ruth, S. Declair, Jens Förstner, Cedrik Meier, and Donat
Josef As. “Whispering Gallery Modes in Zinc-Blende AlN Microdisks Containing Non-Polar
GaN Quantum Dots.” Applied Physics Letters 102, no. 8 (2013): 081105. https://doi.org/10.1063/1.4793653.'
ieee: M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, and D. J. As, “Whispering
gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots,”
Applied Physics Letters, vol. 102, no. 8, p. 081105, 2013.
mla: Bürger, M., et al. “Whispering Gallery Modes in Zinc-Blende AlN Microdisks
Containing Non-Polar GaN Quantum Dots.” Applied Physics Letters, vol. 102,
no. 8, AIP Publishing, 2013, p. 081105, doi:10.1063/1.4793653.
short: M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, D.J. As, Applied Physics
Letters 102 (2013) 081105.
date_created: 2018-08-21T07:43:22Z
date_updated: 2022-01-06T07:00:01Z
ddc:
- '530'
department:
- _id: '15'
- _id: '287'
- _id: '284'
- _id: '230'
- _id: '35'
doi: 10.1063/1.4793653
file:
- access_level: open_access
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-21T07:47:02Z
date_updated: 2018-09-04T20:08:52Z
file_id: '3964'
file_name: 2013-02 Bürger,Ruth,Declair,Förstner,Meier,As_Whispering gallery modes
in zinc-blende AlN microdisks containing non-polar GaN quantum dots.pdf
file_size: 935911
relation: main_file
file_date_updated: 2018-09-04T20:08:52Z
has_accepted_license: '1'
intvolume: ' 102'
issue: '8'
keyword:
- tet_topic_qd
- tet_topic_microdisk
language:
- iso: eng
oa: '1'
page: '081105'
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Whispering gallery modes in zinc-blende AlN microdisks containing non-polar
GaN quantum dots
type: journal_article
urn: '39635'
user_id: '14'
volume: 102
year: '2013'
...
---
_id: '39719'
article_number: '043303'
author:
- first_name: Joachim
full_name: Vollbrecht, Joachim
last_name: Vollbrecht
- first_name: Olga
full_name: Kasdorf, Olga
last_name: Kasdorf
- first_name: Viktor
full_name: Quiring, Viktor
last_name: Quiring
- first_name: Hubertus
full_name: Suche, Hubertus
last_name: Suche
- first_name: Harald
full_name: Bock, Harald
last_name: Bock
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Vollbrecht J, Kasdorf O, Quiring V, Suche H, Bock H, Kitzerow H-S. Microresonator-enhanced
electroluminescence of an organic light emitting diode based on a columnar liquid
crystal. Applied Physics Letters. 2013;103(4). doi:10.1063/1.4816425
apa: Vollbrecht, J., Kasdorf, O., Quiring, V., Suche, H., Bock, H., & Kitzerow,
H.-S. (2013). Microresonator-enhanced electroluminescence of an organic light
emitting diode based on a columnar liquid crystal. Applied Physics Letters,
103(4), Article 043303. https://doi.org/10.1063/1.4816425
bibtex: '@article{Vollbrecht_Kasdorf_Quiring_Suche_Bock_Kitzerow_2013, title={Microresonator-enhanced
electroluminescence of an organic light emitting diode based on a columnar liquid
crystal}, volume={103}, DOI={10.1063/1.4816425},
number={4043303}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Vollbrecht, Joachim and Kasdorf, Olga and Quiring, Viktor and Suche, Hubertus
and Bock, Harald and Kitzerow, Heinz-Siegfried}, year={2013} }'
chicago: Vollbrecht, Joachim, Olga Kasdorf, Viktor Quiring, Hubertus Suche, Harald
Bock, and Heinz-Siegfried Kitzerow. “Microresonator-Enhanced Electroluminescence
of an Organic Light Emitting Diode Based on a Columnar Liquid Crystal.” Applied
Physics Letters 103, no. 4 (2013). https://doi.org/10.1063/1.4816425.
ieee: 'J. Vollbrecht, O. Kasdorf, V. Quiring, H. Suche, H. Bock, and H.-S. Kitzerow,
“Microresonator-enhanced electroluminescence of an organic light emitting diode
based on a columnar liquid crystal,” Applied Physics Letters, vol. 103,
no. 4, Art. no. 043303, 2013, doi: 10.1063/1.4816425.'
mla: Vollbrecht, Joachim, et al. “Microresonator-Enhanced Electroluminescence of
an Organic Light Emitting Diode Based on a Columnar Liquid Crystal.” Applied
Physics Letters, vol. 103, no. 4, 043303, AIP Publishing, 2013, doi:10.1063/1.4816425.
short: J. Vollbrecht, O. Kasdorf, V. Quiring, H. Suche, H. Bock, H.-S. Kitzerow,
Applied Physics Letters 103 (2013).
date_created: 2023-01-24T18:33:09Z
date_updated: 2023-01-24T18:33:39Z
department:
- _id: '313'
- _id: '230'
- _id: '638'
doi: 10.1063/1.4816425
intvolume: ' 103'
issue: '4'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Microresonator-enhanced electroluminescence of an organic light emitting diode
based on a columnar liquid crystal
type: journal_article
user_id: '254'
volume: 103
year: '2013'
...
---
_id: '26066'
article_number: '211119'
author:
- first_name: Ming-Fei
full_name: Li, Ming-Fei
last_name: Li
- first_name: Yu-Ran
full_name: Zhang, Yu-Ran
last_name: Zhang
- first_name: Xue-Feng
full_name: Liu, Xue-Feng
last_name: Liu
- first_name: Xu-Ri
full_name: Yao, Xu-Ri
last_name: Yao
- first_name: Kai Hong
full_name: Luo, Kai Hong
id: '36389'
last_name: Luo
orcid: 0000-0003-1008-4976
- first_name: Heng
full_name: Fan, Heng
last_name: Fan
- first_name: Ling-An
full_name: Wu, Ling-An
last_name: Wu
citation:
ama: Li M-F, Zhang Y-R, Liu X-F, et al. A double-threshold technique for fast time-correspondence
imaging. Applied Physics Letters. Published online 2013. doi:10.1063/1.4832328
apa: Li, M.-F., Zhang, Y.-R., Liu, X.-F., Yao, X.-R., Luo, K. H., Fan, H., &
Wu, L.-A. (2013). A double-threshold technique for fast time-correspondence imaging.
Applied Physics Letters, Article 211119. https://doi.org/10.1063/1.4832328
bibtex: '@article{Li_Zhang_Liu_Yao_Luo_Fan_Wu_2013, title={A double-threshold technique
for fast time-correspondence imaging}, DOI={10.1063/1.4832328},
number={211119}, journal={Applied Physics Letters}, author={Li, Ming-Fei and Zhang,
Yu-Ran and Liu, Xue-Feng and Yao, Xu-Ri and Luo, Kai Hong and Fan, Heng and Wu,
Ling-An}, year={2013} }'
chicago: Li, Ming-Fei, Yu-Ran Zhang, Xue-Feng Liu, Xu-Ri Yao, Kai Hong Luo, Heng
Fan, and Ling-An Wu. “A Double-Threshold Technique for Fast Time-Correspondence
Imaging.” Applied Physics Letters, 2013. https://doi.org/10.1063/1.4832328.
ieee: 'M.-F. Li et al., “A double-threshold technique for fast time-correspondence
imaging,” Applied Physics Letters, Art. no. 211119, 2013, doi: 10.1063/1.4832328.'
mla: Li, Ming-Fei, et al. “A Double-Threshold Technique for Fast Time-Correspondence
Imaging.” Applied Physics Letters, 211119, 2013, doi:10.1063/1.4832328.
short: M.-F. Li, Y.-R. Zhang, X.-F. Liu, X.-R. Yao, K.H. Luo, H. Fan, L.-A. Wu,
Applied Physics Letters (2013).
date_created: 2021-10-12T08:38:51Z
date_updated: 2023-01-26T10:09:42Z
doi: 10.1063/1.4832328
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: A double-threshold technique for fast time-correspondence imaging
type: journal_article
user_id: '36389'
year: '2013'
...
---
_id: '7301'
article_number: '112402'
author:
- first_name: Henning
full_name: Höpfner, Henning
last_name: Höpfner
- first_name: Carola
full_name: Fritsche, Carola
last_name: Fritsche
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Astrid
full_name: Ludwig, Astrid
last_name: Ludwig
- first_name: Frank
full_name: Stromberg, Frank
last_name: Stromberg
- first_name: Heiko
full_name: Wende, Heiko
last_name: Wende
- first_name: Werner
full_name: Keune, Werner
last_name: Keune
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Nils C.
full_name: Gerhardt, Nils C.
last_name: Gerhardt
- first_name: Martin R.
full_name: Hofmann, Martin R.
last_name: Hofmann
citation:
ama: Höpfner H, Fritsche C, Ludwig A, et al. Magnetic field dependence of the spin
relaxation length in spin light-emitting diodes. Applied Physics Letters.
2012;101(11). doi:10.1063/1.4752162
apa: Höpfner, H., Fritsche, C., Ludwig, A., Ludwig, A., Stromberg, F., Wende, H.,
… Hofmann, M. R. (2012). Magnetic field dependence of the spin relaxation length
in spin light-emitting diodes. Applied Physics Letters, 101(11).
https://doi.org/10.1063/1.4752162
bibtex: '@article{Höpfner_Fritsche_Ludwig_Ludwig_Stromberg_Wende_Keune_Reuter_Wieck_Gerhardt_et
al._2012, title={Magnetic field dependence of the spin relaxation length in spin
light-emitting diodes}, volume={101}, DOI={10.1063/1.4752162},
number={11112402}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Höpfner, Henning and Fritsche, Carola and Ludwig, Arne and Ludwig, Astrid
and Stromberg, Frank and Wende, Heiko and Keune, Werner and Reuter, Dirk and Wieck,
Andreas D. and Gerhardt, Nils C. and et al.}, year={2012} }'
chicago: Höpfner, Henning, Carola Fritsche, Arne Ludwig, Astrid Ludwig, Frank Stromberg,
Heiko Wende, Werner Keune, et al. “Magnetic Field Dependence of the Spin Relaxation
Length in Spin Light-Emitting Diodes.” Applied Physics Letters 101, no.
11 (2012). https://doi.org/10.1063/1.4752162.
ieee: H. Höpfner et al., “Magnetic field dependence of the spin relaxation
length in spin light-emitting diodes,” Applied Physics Letters, vol. 101,
no. 11, 2012.
mla: Höpfner, Henning, et al. “Magnetic Field Dependence of the Spin Relaxation
Length in Spin Light-Emitting Diodes.” Applied Physics Letters, vol. 101,
no. 11, 112402, AIP Publishing, 2012, doi:10.1063/1.4752162.
short: H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W.
Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, Applied Physics Letters
101 (2012).
date_created: 2019-01-31T09:05:22Z
date_updated: 2022-01-06T07:03:33Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.4752162
intvolume: ' 101'
issue: '11'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Magnetic field dependence of the spin relaxation length in spin light-emitting
diodes
type: journal_article
user_id: '42514'
volume: 101
year: '2012'
...
---
_id: '7312'
article_number: '232110'
author:
- first_name: Andreas
full_name: Beckel, Andreas
last_name: Beckel
- first_name: Daming
full_name: Zhou, Daming
last_name: Zhou
- first_name: Bastian
full_name: Marquardt, Bastian
last_name: Marquardt
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Martin
full_name: Geller, Martin
last_name: Geller
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
citation:
ama: Beckel A, Zhou D, Marquardt B, et al. Momentum matching in the tunneling between
2-dimensional and 0-dimensional electron systems. Applied Physics Letters.
2012;100(23). doi:10.1063/1.4728114
apa: Beckel, A., Zhou, D., Marquardt, B., Reuter, D., Wieck, A. D., Geller, M.,
& Lorke, A. (2012). Momentum matching in the tunneling between 2-dimensional
and 0-dimensional electron systems. Applied Physics Letters, 100(23).
https://doi.org/10.1063/1.4728114
bibtex: '@article{Beckel_Zhou_Marquardt_Reuter_Wieck_Geller_Lorke_2012, title={Momentum
matching in the tunneling between 2-dimensional and 0-dimensional electron systems},
volume={100}, DOI={10.1063/1.4728114},
number={23232110}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Beckel, Andreas and Zhou, Daming and Marquardt, Bastian and Reuter, Dirk
and Wieck, Andreas D. and Geller, Martin and Lorke, Axel}, year={2012} }'
chicago: Beckel, Andreas, Daming Zhou, Bastian Marquardt, Dirk Reuter, Andreas D.
Wieck, Martin Geller, and Axel Lorke. “Momentum Matching in the Tunneling between
2-Dimensional and 0-Dimensional Electron Systems.” Applied Physics Letters
100, no. 23 (2012). https://doi.org/10.1063/1.4728114.
ieee: A. Beckel et al., “Momentum matching in the tunneling between 2-dimensional
and 0-dimensional electron systems,” Applied Physics Letters, vol. 100,
no. 23, 2012.
mla: Beckel, Andreas, et al. “Momentum Matching in the Tunneling between 2-Dimensional
and 0-Dimensional Electron Systems.” Applied Physics Letters, vol. 100,
no. 23, 232110, AIP Publishing, 2012, doi:10.1063/1.4728114.
short: A. Beckel, D. Zhou, B. Marquardt, D. Reuter, A.D. Wieck, M. Geller, A. Lorke,
Applied Physics Letters 100 (2012).
date_created: 2019-01-31T10:22:42Z
date_updated: 2022-01-06T07:03:34Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.4728114
intvolume: ' 100'
issue: '23'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Momentum matching in the tunneling between 2-dimensional and 0-dimensional
electron systems
type: journal_article
user_id: '42514'
volume: 100
year: '2012'
...
---
_id: '7313'
article_number: '232107'
author:
- first_name: A.
full_name: Schwan, A.
last_name: Schwan
- first_name: S.
full_name: Varwig, S.
last_name: Varwig
- first_name: A.
full_name: Greilich, A.
last_name: Greilich
- first_name: D. R.
full_name: Yakovlev, D. R.
last_name: Yakovlev
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
citation:
ama: Schwan A, Varwig S, Greilich A, et al. Non-resonant optical excitation of mode-locked
electron spin coherence in (In,Ga)As/GaAs quantum dot ensemble. Applied Physics
Letters. 2012;100(23). doi:10.1063/1.4726264
apa: Schwan, A., Varwig, S., Greilich, A., Yakovlev, D. R., Reuter, D., Wieck, A.
D., & Bayer, M. (2012). Non-resonant optical excitation of mode-locked electron
spin coherence in (In,Ga)As/GaAs quantum dot ensemble. Applied Physics Letters,
100(23). https://doi.org/10.1063/1.4726264
bibtex: '@article{Schwan_Varwig_Greilich_Yakovlev_Reuter_Wieck_Bayer_2012, title={Non-resonant
optical excitation of mode-locked electron spin coherence in (In,Ga)As/GaAs quantum
dot ensemble}, volume={100}, DOI={10.1063/1.4726264},
number={23232107}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Schwan, A. and Varwig, S. and Greilich, A. and Yakovlev, D. R. and Reuter,
Dirk and Wieck, A. D. and Bayer, M.}, year={2012} }'
chicago: Schwan, A., S. Varwig, A. Greilich, D. R. Yakovlev, Dirk Reuter, A. D.
Wieck, and M. Bayer. “Non-Resonant Optical Excitation of Mode-Locked Electron
Spin Coherence in (In,Ga)As/GaAs Quantum Dot Ensemble.” Applied Physics Letters
100, no. 23 (2012). https://doi.org/10.1063/1.4726264.
ieee: A. Schwan et al., “Non-resonant optical excitation of mode-locked electron
spin coherence in (In,Ga)As/GaAs quantum dot ensemble,” Applied Physics Letters,
vol. 100, no. 23, 2012.
mla: Schwan, A., et al. “Non-Resonant Optical Excitation of Mode-Locked Electron
Spin Coherence in (In,Ga)As/GaAs Quantum Dot Ensemble.” Applied Physics Letters,
vol. 100, no. 23, 232107, AIP Publishing, 2012, doi:10.1063/1.4726264.
short: A. Schwan, S. Varwig, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck,
M. Bayer, Applied Physics Letters 100 (2012).
date_created: 2019-01-31T10:23:29Z
date_updated: 2022-01-06T07:03:34Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.4726264
intvolume: ' 100'
issue: '23'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Non-resonant optical excitation of mode-locked electron spin coherence in (In,Ga)As/GaAs
quantum dot ensemble
type: journal_article
user_id: '42514'
volume: 100
year: '2012'
...
---
_id: '7327'
article_number: '132103'
author:
- first_name: J.
full_name: Huang, J.
last_name: Huang
- first_name: Y. S.
full_name: Chen, Y. S.
last_name: Chen
- first_name: A.
full_name: Ludwig, A.
last_name: Ludwig
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: G.
full_name: Bacher, G.
last_name: Bacher
citation:
ama: Huang J, Chen YS, Ludwig A, Reuter D, Wieck AD, Bacher G. Electron-nuclei spin
coupling in GaAs—Free versus localized electrons. Applied Physics Letters.
2012;100(13). doi:10.1063/1.3699261
apa: Huang, J., Chen, Y. S., Ludwig, A., Reuter, D., Wieck, A. D., & Bacher,
G. (2012). Electron-nuclei spin coupling in GaAs—Free versus localized electrons.
Applied Physics Letters, 100(13). https://doi.org/10.1063/1.3699261
bibtex: '@article{Huang_Chen_Ludwig_Reuter_Wieck_Bacher_2012, title={Electron-nuclei
spin coupling in GaAs—Free versus localized electrons}, volume={100}, DOI={10.1063/1.3699261}, number={13132103},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Huang,
J. and Chen, Y. S. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Bacher,
G.}, year={2012} }'
chicago: Huang, J., Y. S. Chen, A. Ludwig, Dirk Reuter, A. D. Wieck, and G. Bacher.
“Electron-Nuclei Spin Coupling in GaAs—Free versus Localized Electrons.” Applied
Physics Letters 100, no. 13 (2012). https://doi.org/10.1063/1.3699261.
ieee: J. Huang, Y. S. Chen, A. Ludwig, D. Reuter, A. D. Wieck, and G. Bacher, “Electron-nuclei
spin coupling in GaAs—Free versus localized electrons,” Applied Physics Letters,
vol. 100, no. 13, 2012.
mla: Huang, J., et al. “Electron-Nuclei Spin Coupling in GaAs—Free versus Localized
Electrons.” Applied Physics Letters, vol. 100, no. 13, 132103, AIP Publishing,
2012, doi:10.1063/1.3699261.
short: J. Huang, Y.S. Chen, A. Ludwig, D. Reuter, A.D. Wieck, G. Bacher, Applied
Physics Letters 100 (2012).
date_created: 2019-01-31T11:11:08Z
date_updated: 2022-01-06T07:03:35Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3699261
intvolume: ' 100'
issue: '13'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Electron-nuclei spin coupling in GaAs—Free versus localized electrons
type: journal_article
user_id: '42514'
volume: 100
year: '2012'
...
---
_id: '7330'
article_number: '052101'
author:
- first_name: J. C. H.
full_name: Chen, J. C. H.
last_name: Chen
- first_name: D. Q.
full_name: Wang, D. Q.
last_name: Wang
- first_name: O.
full_name: Klochan, O.
last_name: Klochan
- first_name: A. P.
full_name: Micolich, A. P.
last_name: Micolich
- first_name: K.
full_name: Das Gupta, K.
last_name: Das Gupta
- first_name: F.
full_name: Sfigakis, F.
last_name: Sfigakis
- first_name: D. A.
full_name: Ritchie, D. A.
last_name: Ritchie
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: A. R.
full_name: Hamilton, A. R.
last_name: Hamilton
citation:
ama: Chen JCH, Wang DQ, Klochan O, et al. Fabrication and characterization of ambipolar
devices on an undoped AlGaAs/GaAs heterostructure. Applied Physics Letters.
2012;100(5). doi:10.1063/1.3673837
apa: Chen, J. C. H., Wang, D. Q., Klochan, O., Micolich, A. P., Das Gupta, K., Sfigakis,
F., … Hamilton, A. R. (2012). Fabrication and characterization of ambipolar devices
on an undoped AlGaAs/GaAs heterostructure. Applied Physics Letters, 100(5).
https://doi.org/10.1063/1.3673837
bibtex: '@article{Chen_Wang_Klochan_Micolich_Das Gupta_Sfigakis_Ritchie_Reuter_Wieck_Hamilton_2012,
title={Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs
heterostructure}, volume={100}, DOI={10.1063/1.3673837},
number={5052101}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Chen, J. C. H. and Wang, D. Q. and Klochan, O. and Micolich, A. P. and
Das Gupta, K. and Sfigakis, F. and Ritchie, D. A. and Reuter, Dirk and Wieck,
A. D. and Hamilton, A. R.}, year={2012} }'
chicago: Chen, J. C. H., D. Q. Wang, O. Klochan, A. P. Micolich, K. Das Gupta, F.
Sfigakis, D. A. Ritchie, Dirk Reuter, A. D. Wieck, and A. R. Hamilton. “Fabrication
and Characterization of Ambipolar Devices on an Undoped AlGaAs/GaAs Heterostructure.”
Applied Physics Letters 100, no. 5 (2012). https://doi.org/10.1063/1.3673837.
ieee: J. C. H. Chen et al., “Fabrication and characterization of ambipolar
devices on an undoped AlGaAs/GaAs heterostructure,” Applied Physics Letters,
vol. 100, no. 5, 2012.
mla: Chen, J. C. H., et al. “Fabrication and Characterization of Ambipolar Devices
on an Undoped AlGaAs/GaAs Heterostructure.” Applied Physics Letters, vol.
100, no. 5, 052101, AIP Publishing, 2012, doi:10.1063/1.3673837.
short: J.C.H. Chen, D.Q. Wang, O. Klochan, A.P. Micolich, K. Das Gupta, F. Sfigakis,
D.A. Ritchie, D. Reuter, A.D. Wieck, A.R. Hamilton, Applied Physics Letters 100
(2012).
date_created: 2019-01-31T11:14:10Z
date_updated: 2022-01-06T07:03:35Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3673837
intvolume: ' 100'
issue: '5'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs
heterostructure
type: journal_article
user_id: '42514'
volume: 100
year: '2012'
...
---
_id: '7491'
article_number: '263114'
author:
- first_name: Philipp
full_name: Kröger, Philipp
last_name: Kröger
- first_name: Marcel
full_name: Ruth, Marcel
last_name: Ruth
- first_name: Nils
full_name: Weber, Nils
last_name: Weber
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Kröger P, Ruth M, Weber N, Meier C. Carrier localization in ZnO quantum wires.
Applied Physics Letters. 2012;100(26). doi:10.1063/1.4731767
apa: Kröger, P., Ruth, M., Weber, N., & Meier, C. (2012). Carrier localization
in ZnO quantum wires. Applied Physics Letters, 100(26). https://doi.org/10.1063/1.4731767
bibtex: '@article{Kröger_Ruth_Weber_Meier_2012, title={Carrier localization in ZnO
quantum wires}, volume={100}, DOI={10.1063/1.4731767},
number={26263114}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Kröger, Philipp and Ruth, Marcel and Weber, Nils and Meier, Cedrik}, year={2012}
}'
chicago: Kröger, Philipp, Marcel Ruth, Nils Weber, and Cedrik Meier. “Carrier Localization
in ZnO Quantum Wires.” Applied Physics Letters 100, no. 26 (2012). https://doi.org/10.1063/1.4731767.
ieee: P. Kröger, M. Ruth, N. Weber, and C. Meier, “Carrier localization in ZnO quantum
wires,” Applied Physics Letters, vol. 100, no. 26, 2012.
mla: Kröger, Philipp, et al. “Carrier Localization in ZnO Quantum Wires.” Applied
Physics Letters, vol. 100, no. 26, 263114, AIP Publishing, 2012, doi:10.1063/1.4731767.
short: P. Kröger, M. Ruth, N. Weber, C. Meier, Applied Physics Letters 100 (2012).
date_created: 2019-02-04T14:30:23Z
date_updated: 2022-01-06T07:03:39Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1063/1.4731767
intvolume: ' 100'
issue: '26'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Carrier localization in ZnO quantum wires
type: journal_article
user_id: '20798'
volume: 100
year: '2012'
...
---
_id: '22599'
article_number: '114101'
author:
- first_name: A. P.
full_name: Ehiasarian, A. P.
last_name: Ehiasarian
- first_name: A.
full_name: Hecimovic, A.
last_name: Hecimovic
- first_name: Maria Teresa
full_name: de los Arcos de Pedro, Maria Teresa
id: '54556'
last_name: de los Arcos de Pedro
- first_name: R.
full_name: New, R.
last_name: New
- first_name: V.
full_name: Schulz-von der Gathen, V.
last_name: Schulz-von der Gathen
- first_name: M.
full_name: Böke, M.
last_name: Böke
- first_name: J.
full_name: Winter, J.
last_name: Winter
citation:
ama: 'Ehiasarian AP, Hecimovic A, de los Arcos de Pedro MT, et al. High power impulse
magnetron sputtering discharges: Instabilities and plasma self-organization. Applied
Physics Letters. Published online 2012. doi:10.1063/1.3692172'
apa: 'Ehiasarian, A. P., Hecimovic, A., de los Arcos de Pedro, M. T., New, R., Schulz-von
der Gathen, V., Böke, M., & Winter, J. (2012). High power impulse magnetron
sputtering discharges: Instabilities and plasma self-organization. Applied
Physics Letters, Article 114101. https://doi.org/10.1063/1.3692172'
bibtex: '@article{Ehiasarian_Hecimovic_de los Arcos de Pedro_New_Schulz-von der
Gathen_Böke_Winter_2012, title={High power impulse magnetron sputtering discharges:
Instabilities and plasma self-organization}, DOI={10.1063/1.3692172},
number={114101}, journal={Applied Physics Letters}, author={Ehiasarian, A. P.
and Hecimovic, A. and de los Arcos de Pedro, Maria Teresa and New, R. and Schulz-von
der Gathen, V. and Böke, M. and Winter, J.}, year={2012} }'
chicago: 'Ehiasarian, A. P., A. Hecimovic, Maria Teresa de los Arcos de Pedro, R.
New, V. Schulz-von der Gathen, M. Böke, and J. Winter. “High Power Impulse Magnetron
Sputtering Discharges: Instabilities and Plasma Self-Organization.” Applied
Physics Letters, 2012. https://doi.org/10.1063/1.3692172.'
ieee: 'A. P. Ehiasarian et al., “High power impulse magnetron sputtering
discharges: Instabilities and plasma self-organization,” Applied Physics Letters,
Art. no. 114101, 2012, doi: 10.1063/1.3692172.'
mla: 'Ehiasarian, A. P., et al. “High Power Impulse Magnetron Sputtering Discharges:
Instabilities and Plasma Self-Organization.” Applied Physics Letters, 114101,
2012, doi:10.1063/1.3692172.'
short: A.P. Ehiasarian, A. Hecimovic, M.T. de los Arcos de Pedro, R. New, V. Schulz-von
der Gathen, M. Böke, J. Winter, Applied Physics Letters (2012).
date_created: 2021-07-07T11:22:50Z
date_updated: 2023-01-24T08:24:51Z
department:
- _id: '302'
doi: 10.1063/1.3692172
extern: '1'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: 'High power impulse magnetron sputtering discharges: Instabilities and plasma
self-organization'
type: journal_article
user_id: '54556'
year: '2012'
...
---
_id: '39729'
article_number: '223301'
author:
- first_name: B.
full_name: Atorf, B.
last_name: Atorf
- first_name: A.
full_name: Hoischen, A.
last_name: Hoischen
- first_name: M. B.
full_name: Ros, M. B.
last_name: Ros
- first_name: N.
full_name: Gimeno, N.
last_name: Gimeno
- first_name: C.
full_name: Tschierske, C.
last_name: Tschierske
- first_name: G.
full_name: Dantlgraber, G.
last_name: Dantlgraber
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Atorf B, Hoischen A, Ros MB, et al. Switching performance of a polymer-stabilized
antiferroelectric liquid crystal based on bent-core molecules. Applied Physics
Letters. 2012;100(22). doi:10.1063/1.4722794
apa: Atorf, B., Hoischen, A., Ros, M. B., Gimeno, N., Tschierske, C., Dantlgraber,
G., & Kitzerow, H.-S. (2012). Switching performance of a polymer-stabilized
antiferroelectric liquid crystal based on bent-core molecules. Applied Physics
Letters, 100(22), Article 223301. https://doi.org/10.1063/1.4722794
bibtex: '@article{Atorf_Hoischen_Ros_Gimeno_Tschierske_Dantlgraber_Kitzerow_2012,
title={Switching performance of a polymer-stabilized antiferroelectric liquid
crystal based on bent-core molecules}, volume={100}, DOI={10.1063/1.4722794},
number={22223301}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Atorf, B. and Hoischen, A. and Ros, M. B. and Gimeno, N. and Tschierske,
C. and Dantlgraber, G. and Kitzerow, Heinz-Siegfried}, year={2012} }'
chicago: Atorf, B., A. Hoischen, M. B. Ros, N. Gimeno, C. Tschierske, G. Dantlgraber,
and Heinz-Siegfried Kitzerow. “Switching Performance of a Polymer-Stabilized Antiferroelectric
Liquid Crystal Based on Bent-Core Molecules.” Applied Physics Letters 100,
no. 22 (2012). https://doi.org/10.1063/1.4722794.
ieee: 'B. Atorf et al., “Switching performance of a polymer-stabilized antiferroelectric
liquid crystal based on bent-core molecules,” Applied Physics Letters,
vol. 100, no. 22, Art. no. 223301, 2012, doi: 10.1063/1.4722794.'
mla: Atorf, B., et al. “Switching Performance of a Polymer-Stabilized Antiferroelectric
Liquid Crystal Based on Bent-Core Molecules.” Applied Physics Letters,
vol. 100, no. 22, 223301, AIP Publishing, 2012, doi:10.1063/1.4722794.
short: B. Atorf, A. Hoischen, M.B. Ros, N. Gimeno, C. Tschierske, G. Dantlgraber,
H.-S. Kitzerow, Applied Physics Letters 100 (2012).
date_created: 2023-01-24T18:39:05Z
date_updated: 2023-01-24T18:39:34Z
department:
- _id: '313'
- _id: '230'
- _id: '638'
doi: 10.1063/1.4722794
intvolume: ' 100'
issue: '22'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Switching performance of a polymer-stabilized antiferroelectric liquid crystal
based on bent-core molecules
type: journal_article
user_id: '254'
volume: 100
year: '2012'
...
---
_id: '39728'
article_number: '051117'
author:
- first_name: Jürgen
full_name: Schmidtke, Jürgen
last_name: Schmidtke
- first_name: Gisela
full_name: Jünnemann, Gisela
last_name: Jünnemann
- first_name: Susanne
full_name: Keuker-Baumann, Susanne
last_name: Keuker-Baumann
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Schmidtke J, Jünnemann G, Keuker-Baumann S, Kitzerow H-S. Electrical fine tuning
of liquid crystal lasers. Applied Physics Letters. 2012;101(5). doi:10.1063/1.4739840
apa: Schmidtke, J., Jünnemann, G., Keuker-Baumann, S., & Kitzerow, H.-S. (2012).
Electrical fine tuning of liquid crystal lasers. Applied Physics Letters,
101(5), Article 051117. https://doi.org/10.1063/1.4739840
bibtex: '@article{Schmidtke_Jünnemann_Keuker-Baumann_Kitzerow_2012, title={Electrical
fine tuning of liquid crystal lasers}, volume={101}, DOI={10.1063/1.4739840},
number={5051117}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Schmidtke, Jürgen and Jünnemann, Gisela and Keuker-Baumann, Susanne and
Kitzerow, Heinz-Siegfried}, year={2012} }'
chicago: Schmidtke, Jürgen, Gisela Jünnemann, Susanne Keuker-Baumann, and Heinz-Siegfried
Kitzerow. “Electrical Fine Tuning of Liquid Crystal Lasers.” Applied Physics
Letters 101, no. 5 (2012). https://doi.org/10.1063/1.4739840.
ieee: 'J. Schmidtke, G. Jünnemann, S. Keuker-Baumann, and H.-S. Kitzerow, “Electrical
fine tuning of liquid crystal lasers,” Applied Physics Letters, vol. 101,
no. 5, Art. no. 051117, 2012, doi: 10.1063/1.4739840.'
mla: Schmidtke, Jürgen, et al. “Electrical Fine Tuning of Liquid Crystal Lasers.”
Applied Physics Letters, vol. 101, no. 5, 051117, AIP Publishing, 2012,
doi:10.1063/1.4739840.
short: J. Schmidtke, G. Jünnemann, S. Keuker-Baumann, H.-S. Kitzerow, Applied Physics
Letters 101 (2012).
date_created: 2023-01-24T18:38:22Z
date_updated: 2023-01-24T18:38:50Z
department:
- _id: '313'
- _id: '230'
- _id: '638'
doi: 10.1063/1.4739840
intvolume: ' 101'
issue: '5'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Electrical fine tuning of liquid crystal lasers
type: journal_article
user_id: '254'
volume: 101
year: '2012'
...
---
_id: '7697'
article_number: '223510'
author:
- first_name: B.
full_name: Marquardt, B.
last_name: Marquardt
- first_name: A.
full_name: Beckel, A.
last_name: Beckel
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: M.
full_name: Geller, M.
last_name: Geller
citation:
ama: 'Marquardt B, Beckel A, Lorke A, Wieck AD, Reuter D, Geller M. The influence
of charged InAs quantum dots on the conductance of a two-dimensional electron
gas: Mobility vs. carrier concentration. Applied Physics Letters. 2011;99(22).
doi:10.1063/1.3665070'
apa: 'Marquardt, B., Beckel, A., Lorke, A., Wieck, A. D., Reuter, D., & Geller,
M. (2011). The influence of charged InAs quantum dots on the conductance of a
two-dimensional electron gas: Mobility vs. carrier concentration. Applied Physics
Letters, 99(22). https://doi.org/10.1063/1.3665070'
bibtex: '@article{Marquardt_Beckel_Lorke_Wieck_Reuter_Geller_2011, title={The influence
of charged InAs quantum dots on the conductance of a two-dimensional electron
gas: Mobility vs. carrier concentration}, volume={99}, DOI={10.1063/1.3665070},
number={22223510}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Marquardt, B. and Beckel, A. and Lorke, A. and Wieck, A. D. and Reuter,
Dirk and Geller, M.}, year={2011} }'
chicago: 'Marquardt, B., A. Beckel, A. Lorke, A. D. Wieck, Dirk Reuter, and M. Geller.
“The Influence of Charged InAs Quantum Dots on the Conductance of a Two-Dimensional
Electron Gas: Mobility vs. Carrier Concentration.” Applied Physics Letters
99, no. 22 (2011). https://doi.org/10.1063/1.3665070.'
ieee: 'B. Marquardt, A. Beckel, A. Lorke, A. D. Wieck, D. Reuter, and M. Geller,
“The influence of charged InAs quantum dots on the conductance of a two-dimensional
electron gas: Mobility vs. carrier concentration,” Applied Physics Letters,
vol. 99, no. 22, 2011.'
mla: 'Marquardt, B., et al. “The Influence of Charged InAs Quantum Dots on the Conductance
of a Two-Dimensional Electron Gas: Mobility vs. Carrier Concentration.” Applied
Physics Letters, vol. 99, no. 22, 223510, AIP Publishing, 2011, doi:10.1063/1.3665070.'
short: B. Marquardt, A. Beckel, A. Lorke, A.D. Wieck, D. Reuter, M. Geller, Applied
Physics Letters 99 (2011).
date_created: 2019-02-14T09:41:25Z
date_updated: 2022-01-06T07:03:44Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3665070
intvolume: ' 99'
issue: '22'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: 'The influence of charged InAs quantum dots on the conductance of a two-dimensional
electron gas: Mobility vs. carrier concentration'
type: journal_article
user_id: '42514'
volume: 99
year: '2011'
...
---
_id: '7710'
article_number: '102111'
author:
- first_name: Sven S.
full_name: Buchholz, Sven S.
last_name: Buchholz
- first_name: Ulrich
full_name: Kunze, Ulrich
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Saskia F.
full_name: Fischer, Saskia F.
last_name: Fischer
citation:
ama: Buchholz SS, Kunze U, Reuter D, Wieck AD, Fischer SF. Mode-filtered electron
injection into a waveguide interferometer. Applied Physics Letters. 2011;98(10).
doi:10.1063/1.3563714
apa: Buchholz, S. S., Kunze, U., Reuter, D., Wieck, A. D., & Fischer, S. F.
(2011). Mode-filtered electron injection into a waveguide interferometer. Applied
Physics Letters, 98(10). https://doi.org/10.1063/1.3563714
bibtex: '@article{Buchholz_Kunze_Reuter_Wieck_Fischer_2011, title={Mode-filtered
electron injection into a waveguide interferometer}, volume={98}, DOI={10.1063/1.3563714},
number={10102111}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Buchholz, Sven S. and Kunze, Ulrich and Reuter, Dirk and Wieck, Andreas
D. and Fischer, Saskia F.}, year={2011} }'
chicago: Buchholz, Sven S., Ulrich Kunze, Dirk Reuter, Andreas D. Wieck, and Saskia
F. Fischer. “Mode-Filtered Electron Injection into a Waveguide Interferometer.”
Applied Physics Letters 98, no. 10 (2011). https://doi.org/10.1063/1.3563714.
ieee: S. S. Buchholz, U. Kunze, D. Reuter, A. D. Wieck, and S. F. Fischer, “Mode-filtered
electron injection into a waveguide interferometer,” Applied Physics Letters,
vol. 98, no. 10, 2011.
mla: Buchholz, Sven S., et al. “Mode-Filtered Electron Injection into a Waveguide
Interferometer.” Applied Physics Letters, vol. 98, no. 10, 102111, AIP
Publishing, 2011, doi:10.1063/1.3563714.
short: S.S. Buchholz, U. Kunze, D. Reuter, A.D. Wieck, S.F. Fischer, Applied Physics
Letters 98 (2011).
date_created: 2019-02-14T10:32:36Z
date_updated: 2022-01-06T07:03:45Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3563714
intvolume: ' 98'
issue: '10'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Mode-filtered electron injection into a waveguide interferometer
type: journal_article
user_id: '42514'
volume: 98
year: '2011'
...
---
_id: '7711'
article_number: '081911'
author:
- first_name: Y. S.
full_name: Chen, Y. S.
last_name: Chen
- first_name: J.
full_name: Huang, J.
last_name: Huang
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A.
full_name: Ludwig, A.
last_name: Ludwig
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: G.
full_name: Bacher, G.
last_name: Bacher
citation:
ama: Chen YS, Huang J, Reuter D, Ludwig A, Wieck AD, Bacher G. Optically detected
nuclear magnetic resonance in n-GaAs using an on-chip microcoil. Applied Physics
Letters. 2011;98(8). doi:10.1063/1.3553503
apa: Chen, Y. S., Huang, J., Reuter, D., Ludwig, A., Wieck, A. D., & Bacher,
G. (2011). Optically detected nuclear magnetic resonance in n-GaAs using an on-chip
microcoil. Applied Physics Letters, 98(8). https://doi.org/10.1063/1.3553503
bibtex: '@article{Chen_Huang_Reuter_Ludwig_Wieck_Bacher_2011, title={Optically detected
nuclear magnetic resonance in n-GaAs using an on-chip microcoil}, volume={98},
DOI={10.1063/1.3553503}, number={8081911},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chen, Y.
S. and Huang, J. and Reuter, Dirk and Ludwig, A. and Wieck, A. D. and Bacher,
G.}, year={2011} }'
chicago: Chen, Y. S., J. Huang, Dirk Reuter, A. Ludwig, A. D. Wieck, and G. Bacher.
“Optically Detected Nuclear Magnetic Resonance in N-GaAs Using an on-Chip Microcoil.”
Applied Physics Letters 98, no. 8 (2011). https://doi.org/10.1063/1.3553503.
ieee: Y. S. Chen, J. Huang, D. Reuter, A. Ludwig, A. D. Wieck, and G. Bacher, “Optically
detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil,” Applied
Physics Letters, vol. 98, no. 8, 2011.
mla: Chen, Y. S., et al. “Optically Detected Nuclear Magnetic Resonance in N-GaAs
Using an on-Chip Microcoil.” Applied Physics Letters, vol. 98, no. 8, 081911,
AIP Publishing, 2011, doi:10.1063/1.3553503.
short: Y.S. Chen, J. Huang, D. Reuter, A. Ludwig, A.D. Wieck, G. Bacher, Applied
Physics Letters 98 (2011).
date_created: 2019-02-14T10:33:23Z
date_updated: 2022-01-06T07:03:45Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3553503
intvolume: ' 98'
issue: '8'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil
type: journal_article
user_id: '42514'
volume: 98
year: '2011'
...
---
_id: '7311'
article_number: '051102'
author:
- first_name: Henning
full_name: Soldat, Henning
last_name: Soldat
- first_name: Mingyuan
full_name: Li, Mingyuan
last_name: Li
- first_name: Nils C.
full_name: Gerhardt, Nils C.
last_name: Gerhardt
- first_name: Martin R.
full_name: Hofmann, Martin R.
last_name: Hofmann
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Astrid
full_name: Ebbing, Astrid
last_name: Ebbing
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Frank
full_name: Stromberg, Frank
last_name: Stromberg
- first_name: Werner
full_name: Keune, Werner
last_name: Keune
- first_name: Heiko
full_name: Wende, Heiko
last_name: Wende
citation:
ama: Soldat H, Li M, Gerhardt NC, et al. Room temperature spin relaxation length
in spin light-emitting diodes. Applied Physics Letters. 2011;99(5). doi:10.1063/1.3622662
apa: Soldat, H., Li, M., Gerhardt, N. C., Hofmann, M. R., Ludwig, A., Ebbing, A.,
… Wende, H. (2011). Room temperature spin relaxation length in spin light-emitting
diodes. Applied Physics Letters, 99(5). https://doi.org/10.1063/1.3622662
bibtex: '@article{Soldat_Li_Gerhardt_Hofmann_Ludwig_Ebbing_Reuter_Wieck_Stromberg_Keune_et
al._2011, title={Room temperature spin relaxation length in spin light-emitting
diodes}, volume={99}, DOI={10.1063/1.3622662},
number={5051102}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Soldat, Henning and Li, Mingyuan and Gerhardt, Nils C. and Hofmann, Martin
R. and Ludwig, Arne and Ebbing, Astrid and Reuter, Dirk and Wieck, Andreas D.
and Stromberg, Frank and Keune, Werner and et al.}, year={2011} }'
chicago: Soldat, Henning, Mingyuan Li, Nils C. Gerhardt, Martin R. Hofmann, Arne
Ludwig, Astrid Ebbing, Dirk Reuter, et al. “Room Temperature Spin Relaxation Length
in Spin Light-Emitting Diodes.” Applied Physics Letters 99, no. 5 (2011).
https://doi.org/10.1063/1.3622662.
ieee: H. Soldat et al., “Room temperature spin relaxation length in spin
light-emitting diodes,” Applied Physics Letters, vol. 99, no. 5, 2011.
mla: Soldat, Henning, et al. “Room Temperature Spin Relaxation Length in Spin Light-Emitting
Diodes.” Applied Physics Letters, vol. 99, no. 5, 051102, AIP Publishing,
2011, doi:10.1063/1.3622662.
short: H. Soldat, M. Li, N.C. Gerhardt, M.R. Hofmann, A. Ludwig, A. Ebbing, D. Reuter,
A.D. Wieck, F. Stromberg, W. Keune, H. Wende, Applied Physics Letters 99 (2011).
date_created: 2019-01-31T10:21:25Z
date_updated: 2022-01-06T07:03:34Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3622662
intvolume: ' 99'
issue: '5'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Room temperature spin relaxation length in spin light-emitting diodes
type: journal_article
user_id: '42514'
volume: 99
year: '2011'
...
---
_id: '39735'
article_number: '241106'
author:
- first_name: Alexander
full_name: Lorenz, Alexander
last_name: Lorenz
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Lorenz A, Kitzerow H-S. Efficient electro-optic switching in a photonic liquid
crystal fiber. Applied Physics Letters. 2011;98(24). doi:10.1063/1.3599848
apa: Lorenz, A., & Kitzerow, H.-S. (2011). Efficient electro-optic switching
in a photonic liquid crystal fiber. Applied Physics Letters, 98(24),
Article 241106. https://doi.org/10.1063/1.3599848
bibtex: '@article{Lorenz_Kitzerow_2011, title={Efficient electro-optic switching
in a photonic liquid crystal fiber}, volume={98}, DOI={10.1063/1.3599848},
number={24241106}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Lorenz, Alexander and Kitzerow, Heinz-Siegfried}, year={2011} }'
chicago: Lorenz, Alexander, and Heinz-Siegfried Kitzerow. “Efficient Electro-Optic
Switching in a Photonic Liquid Crystal Fiber.” Applied Physics Letters
98, no. 24 (2011). https://doi.org/10.1063/1.3599848.
ieee: 'A. Lorenz and H.-S. Kitzerow, “Efficient electro-optic switching in a photonic
liquid crystal fiber,” Applied Physics Letters, vol. 98, no. 24, Art. no.
241106, 2011, doi: 10.1063/1.3599848.'
mla: Lorenz, Alexander, and Heinz-Siegfried Kitzerow. “Efficient Electro-Optic Switching
in a Photonic Liquid Crystal Fiber.” Applied Physics Letters, vol. 98,
no. 24, 241106, AIP Publishing, 2011, doi:10.1063/1.3599848.
short: A. Lorenz, H.-S. Kitzerow, Applied Physics Letters 98 (2011).
date_created: 2023-01-24T18:42:25Z
date_updated: 2023-01-24T18:42:50Z
department:
- _id: '313'
- _id: '230'
- _id: '638'
doi: 10.1063/1.3599848
intvolume: ' 98'
issue: '24'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Efficient electro-optic switching in a photonic liquid crystal fiber
type: journal_article
user_id: '254'
volume: 98
year: '2011'
...
---
_id: '7975'
article_number: '033111'
author:
- first_name: W.
full_name: Lei, W.
last_name: Lei
- first_name: C.
full_name: Notthoff, C.
last_name: Notthoff
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Lei W, Notthoff C, Lorke A, Reuter D, Wieck AD. Electronic structure of self-assembled
InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied
Physics Letters. 2010;96(3). doi:10.1063/1.3293445
apa: Lei, W., Notthoff, C., Lorke, A., Reuter, D., & Wieck, A. D. (2010). Electronic
structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage
spectroscopy. Applied Physics Letters, 96(3). https://doi.org/10.1063/1.3293445
bibtex: '@article{Lei_Notthoff_Lorke_Reuter_Wieck_2010, title={Electronic structure
of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy},
volume={96}, DOI={10.1063/1.3293445},
number={3033111}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Lei, W. and Notthoff, C. and Lorke, A. and Reuter, Dirk and Wieck, A.
D.}, year={2010} }'
chicago: Lei, W., C. Notthoff, A. Lorke, Dirk Reuter, and A. D. Wieck. “Electronic
Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage
Spectroscopy.” Applied Physics Letters 96, no. 3 (2010). https://doi.org/10.1063/1.3293445.
ieee: W. Lei, C. Notthoff, A. Lorke, D. Reuter, and A. D. Wieck, “Electronic structure
of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy,”
Applied Physics Letters, vol. 96, no. 3, 2010.
mla: Lei, W., et al. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum
Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters,
vol. 96, no. 3, 033111, AIP Publishing, 2010, doi:10.1063/1.3293445.
short: W. Lei, C. Notthoff, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters
96 (2010).
date_created: 2019-02-21T13:32:39Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3293445
intvolume: ' 96'
issue: '3'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by
capacitance-voltage spectroscopy
type: journal_article
user_id: '42514'
volume: 96
year: '2010'
...
---
_id: '7980'
article_number: '033111'
author:
- first_name: W.
full_name: Lei, W.
last_name: Lei
- first_name: C.
full_name: Notthoff, C.
last_name: Notthoff
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Lei W, Notthoff C, Lorke A, Reuter D, Wieck AD. Electronic structure of self-assembled
InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied
Physics Letters. 2010;96(3). doi:10.1063/1.3293445
apa: Lei, W., Notthoff, C., Lorke, A., Reuter, D., & Wieck, A. D. (2010). Electronic
structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage
spectroscopy. Applied Physics Letters, 96(3). https://doi.org/10.1063/1.3293445
bibtex: '@article{Lei_Notthoff_Lorke_Reuter_Wieck_2010, title={Electronic structure
of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy},
volume={96}, DOI={10.1063/1.3293445},
number={3033111}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Lei, W. and Notthoff, C. and Lorke, A. and Reuter, Dirk and Wieck, A.
D.}, year={2010} }'
chicago: Lei, W., C. Notthoff, A. Lorke, Dirk Reuter, and A. D. Wieck. “Electronic
Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage
Spectroscopy.” Applied Physics Letters 96, no. 3 (2010). https://doi.org/10.1063/1.3293445.
ieee: W. Lei, C. Notthoff, A. Lorke, D. Reuter, and A. D. Wieck, “Electronic structure
of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy,”
Applied Physics Letters, vol. 96, no. 3, 2010.
mla: Lei, W., et al. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum
Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters,
vol. 96, no. 3, 033111, AIP Publishing, 2010, doi:10.1063/1.3293445.
short: W. Lei, C. Notthoff, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters
96 (2010).
date_created: 2019-02-21T14:13:43Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3293445
intvolume: ' 96'
issue: '3'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by
capacitance-voltage spectroscopy
type: journal_article
user_id: '42514'
volume: 96
year: '2010'
...
---
_id: '7982'
article_number: '022110'
author:
- first_name: M.
full_name: Csontos, M.
last_name: Csontos
- first_name: Y.
full_name: Komijani, Y.
last_name: Komijani
- first_name: I.
full_name: Shorubalko, I.
last_name: Shorubalko
- first_name: K.
full_name: Ensslin, K.
last_name: Ensslin
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Csontos M, Komijani Y, Shorubalko I, Ensslin K, Reuter D, Wieck AD. Nanostructures
in p-GaAs with improved tunability. Applied Physics Letters. 2010;97(2).
doi:10.1063/1.3463465
apa: Csontos, M., Komijani, Y., Shorubalko, I., Ensslin, K., Reuter, D., & Wieck,
A. D. (2010). Nanostructures in p-GaAs with improved tunability. Applied Physics
Letters, 97(2). https://doi.org/10.1063/1.3463465
bibtex: '@article{Csontos_Komijani_Shorubalko_Ensslin_Reuter_Wieck_2010, title={Nanostructures
in p-GaAs with improved tunability}, volume={97}, DOI={10.1063/1.3463465},
number={2022110}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Csontos, M. and Komijani, Y. and Shorubalko, I. and Ensslin, K. and Reuter,
Dirk and Wieck, A. D.}, year={2010} }'
chicago: Csontos, M., Y. Komijani, I. Shorubalko, K. Ensslin, Dirk Reuter, and A.
D. Wieck. “Nanostructures in P-GaAs with Improved Tunability.” Applied Physics
Letters 97, no. 2 (2010). https://doi.org/10.1063/1.3463465.
ieee: M. Csontos, Y. Komijani, I. Shorubalko, K. Ensslin, D. Reuter, and A. D. Wieck,
“Nanostructures in p-GaAs with improved tunability,” Applied Physics Letters,
vol. 97, no. 2, 2010.
mla: Csontos, M., et al. “Nanostructures in P-GaAs with Improved Tunability.” Applied
Physics Letters, vol. 97, no. 2, 022110, AIP Publishing, 2010, doi:10.1063/1.3463465.
short: M. Csontos, Y. Komijani, I. Shorubalko, K. Ensslin, D. Reuter, A.D. Wieck,
Applied Physics Letters 97 (2010).
date_created: 2019-02-21T14:33:40Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3463465
intvolume: ' 97'
issue: '2'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Nanostructures in p-GaAs with improved tunability
type: journal_article
user_id: '42514'
volume: 97
year: '2010'
...
---
_id: '7983'
article_number: '062112'
author:
- first_name: M.
full_name: Wiemann, M.
last_name: Wiemann
- first_name: U.
full_name: Wieser, U.
last_name: Wieser
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Wiemann M, Wieser U, Kunze U, Reuter D, Wieck AD. Full-wave rectification based
upon hot-electron thermopower. Applied Physics Letters. 2010;97(6). doi:10.1063/1.3475922
apa: Wiemann, M., Wieser, U., Kunze, U., Reuter, D., & Wieck, A. D. (2010).
Full-wave rectification based upon hot-electron thermopower. Applied Physics
Letters, 97(6). https://doi.org/10.1063/1.3475922
bibtex: '@article{Wiemann_Wieser_Kunze_Reuter_Wieck_2010, title={Full-wave rectification
based upon hot-electron thermopower}, volume={97}, DOI={10.1063/1.3475922},
number={6062112}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Wiemann, M. and Wieser, U. and Kunze, U. and Reuter, Dirk and Wieck, A.
D.}, year={2010} }'
chicago: Wiemann, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Full-Wave
Rectification Based upon Hot-Electron Thermopower.” Applied Physics Letters
97, no. 6 (2010). https://doi.org/10.1063/1.3475922.
ieee: M. Wiemann, U. Wieser, U. Kunze, D. Reuter, and A. D. Wieck, “Full-wave rectification
based upon hot-electron thermopower,” Applied Physics Letters, vol. 97,
no. 6, 2010.
mla: Wiemann, M., et al. “Full-Wave Rectification Based upon Hot-Electron Thermopower.”
Applied Physics Letters, vol. 97, no. 6, 062112, AIP Publishing, 2010,
doi:10.1063/1.3475922.
short: M. Wiemann, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters
97 (2010).
date_created: 2019-02-21T14:34:50Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3475922
intvolume: ' 97'
issue: '6'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Full-wave rectification based upon hot-electron thermopower
type: journal_article
user_id: '42514'
volume: 97
year: '2010'
...
---
_id: '7990'
article_number: '143101'
author:
- first_name: M.
full_name: Mehta, M.
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: S.
full_name: Michaelis de Vasconcellos, S.
last_name: Michaelis de Vasconcellos
- first_name: A.
full_name: Zrenner, A.
last_name: Zrenner
- first_name: C.
full_name: Meier, C.
last_name: Meier
citation:
ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier
C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812
apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner,
A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot
in a micron sized light emitting diode. Applied Physics Letters, 97(14).
https://doi.org/10.1063/1.3488812
bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010,
title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light
emitting diode}, volume={97}, DOI={10.1063/1.3488812},
number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos,
S. and Zrenner, A. and Meier, C.}, year={2010} }'
chicago: Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized
Light Emitting Diode.” Applied Physics Letters 97, no. 14 (2010). https://doi.org/10.1063/1.3488812.
ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized
light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010.
mla: Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron
Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14,
143101, AIP Publishing, 2010, doi:10.1063/1.3488812.
short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
C. Meier, Applied Physics Letters 97 (2010).
date_created: 2019-02-21T14:41:19Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3488812
intvolume: ' 97'
issue: '14'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode
type: journal_article
user_id: '42514'
volume: 97
year: '2010'
...
---
_id: '4550'
abstract:
- lang: eng
text: We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled
molecular beam epitaxial growth into the intrinsic region of a p-i-n junction
diode. This is achieved using an in situ combination of focused ion beam prepatterning,
annealing, and overgrowth, resulting in arrays of individually electrically addressable
(In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence
spectroscopy we demonstrate that these QDs have the same optical quality as optically
pumped Stranski–Krastanov QDs with random nucleation located in proximity to a
doped interface. The results suggest that this technique is scalable and highly
interesting for different applications in quantum devices.
article_number: '143101'
article_type: original
author:
- first_name: M.
full_name: Mehta, M.
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: S.
full_name: Michaelis de Vasconcellos, S.
last_name: Michaelis de Vasconcellos
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier
C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812
apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner,
A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot
in a micron sized light emitting diode. Applied Physics Letters, 97(14).
https://doi.org/10.1063/1.3488812
bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010,
title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light
emitting diode}, volume={97}, DOI={10.1063/1.3488812},
number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos,
S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }'
chicago: Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur
Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot
in a Micron Sized Light Emitting Diode.” Applied Physics Letters 97, no.
14 (2010). https://doi.org/10.1063/1.3488812.
ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized
light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010.
mla: Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron
Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14,
143101, AIP Publishing, 2010, doi:10.1063/1.3488812.
short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
C. Meier, Applied Physics Letters 97 (2010).
date_created: 2018-09-20T12:38:51Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1063/1.3488812
intvolume: ' 97'
issue: '14'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode
type: journal_article
user_id: '20798'
volume: 97
year: '2010'
...
---
_id: '4194'
abstract:
- lang: eng
text: A heterojunction field-effect transistor (HFET) was fabricated of nonpolar
cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy.
The device shows a clear field effect at positive bias voltages with V_th=0.6
V. The HFET output characteristics were calculated using ATLAS simulation program.
The electron channel at the cubic AlGaN/GaN interface was detected by room temperature
capacitance-voltage measurements.
article_number: '253501'
article_type: original
author:
- first_name: E.
full_name: Tschumak, E.
last_name: Tschumak
- first_name: R.
full_name: Granzner, R.
last_name: Granzner
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: F.
full_name: Schwierz, F.
last_name: Schwierz
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: H.
full_name: Nagasawa, H.
last_name: Nagasawa
- first_name: M.
full_name: Abe, M.
last_name: Abe
- first_name: Donald
full_name: As, Donald
last_name: As
citation:
ama: Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction
field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters.
2010;96(25). doi:10.1063/1.3455066
apa: Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa,
H., … As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor
on Ar+ implanted 3C–SiC (001). Applied Physics Letters, 96(25).
https://doi.org/10.1063/1.3455066
bibtex: '@article{Tschumak_Granzner_Lindner_Schwierz_Lischka_Nagasawa_Abe_As_2010,
title={Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+
implanted 3C–SiC (001)}, volume={96}, DOI={10.1063/1.3455066},
number={25253501}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka,
K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2010} }'
chicago: Tschumak, E., R. Granzner, Jörg Lindner, F. Schwierz, K. Lischka, H. Nagasawa,
M. Abe, and Donald As. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor
on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters 96, no. 25 (2010).
https://doi.org/10.1063/1.3455066.
ieee: E. Tschumak et al., “Nonpolar cubic AlGaN/GaN heterojunction field-effect
transistor on Ar+ implanted 3C–SiC (001),” Applied Physics Letters, vol.
96, no. 25, 2010.
mla: Tschumak, E., et al. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect
Transistor on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters, vol.
96, no. 25, 253501, AIP Publishing, 2010, doi:10.1063/1.3455066.
short: E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa,
M. Abe, D. As, Applied Physics Letters 96 (2010).
date_created: 2018-08-28T11:56:08Z
date_updated: 2022-01-06T07:00:33Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1063/1.3455066
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T11:58:27Z
date_updated: 2018-08-28T11:58:27Z
file_id: '4195'
file_name: Non-polar cubic AlGaN-GaN HFET on Ar+ implanted 3C-SiC 001.pdf
file_size: 277385
relation: main_file
success: 1
file_date_updated: 2018-08-28T11:58:27Z
has_accepted_license: '1'
intvolume: ' 96'
issue: '25'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted
3C–SiC (001)
type: journal_article
user_id: '55706'
volume: 96
year: '2010'
...
---
_id: '18632'
abstract:
- lang: eng
text: "We present measurements of the effective electron mass in biaxial tensile
strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained
SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI
and SOI were fabricated and Shubnikov–de Haas oscillations in the temperature
range of T=0.4–4 K for magnetic fields of B=0–10 T were measured. The effective
electron mass in SSOI and SOI samples was determined as mt=(0.20±0.01)m0. This
result is in excellent agreement with first-principles calculations of the\r\neffective
electron mass in the presence of strain."
article_number: '182101'
article_type: original
author:
- first_name: Sebastian F.
full_name: Feste, Sebastian F.
last_name: Feste
- first_name: Thomas
full_name: Schäpers, Thomas
last_name: Schäpers
- first_name: Dan
full_name: Buca, Dan
last_name: Buca
- first_name: Qing Tai
full_name: Zhao, Qing Tai
last_name: Zhao
- first_name: Joachim
full_name: Knoch, Joachim
last_name: Knoch
- first_name: Mohammed
full_name: Bouhassoune, Mohammed
last_name: Bouhassoune
- first_name: Arno
full_name: Schindlmayr, Arno
id: '458'
last_name: Schindlmayr
orcid: 0000-0002-4855-071X
- first_name: Siegfried
full_name: Mantl, Siegfried
last_name: Mantl
citation:
ama: Feste SF, Schäpers T, Buca D, et al. Measurement of effective electron mass
in biaxial tensile strained silicon on insulator. Applied Physics Letters.
2009;95(18). doi:10.1063/1.3254330
apa: Feste, S. F., Schäpers, T., Buca, D., Zhao, Q. T., Knoch, J., Bouhassoune,
M., … Mantl, S. (2009). Measurement of effective electron mass in biaxial tensile
strained silicon on insulator. Applied Physics Letters, 95(18).
https://doi.org/10.1063/1.3254330
bibtex: '@article{Feste_Schäpers_Buca_Zhao_Knoch_Bouhassoune_Schindlmayr_Mantl_2009,
title={Measurement of effective electron mass in biaxial tensile strained silicon
on insulator}, volume={95}, DOI={10.1063/1.3254330},
number={18182101}, journal={Applied Physics Letters}, publisher={American Institute
of Physics}, author={Feste, Sebastian F. and Schäpers, Thomas and Buca, Dan and
Zhao, Qing Tai and Knoch, Joachim and Bouhassoune, Mohammed and Schindlmayr, Arno
and Mantl, Siegfried}, year={2009} }'
chicago: Feste, Sebastian F., Thomas Schäpers, Dan Buca, Qing Tai Zhao, Joachim
Knoch, Mohammed Bouhassoune, Arno Schindlmayr, and Siegfried Mantl. “Measurement
of Effective Electron Mass in Biaxial Tensile Strained Silicon on Insulator.”
Applied Physics Letters 95, no. 18 (2009). https://doi.org/10.1063/1.3254330.
ieee: S. F. Feste et al., “Measurement of effective electron mass in biaxial
tensile strained silicon on insulator,” Applied Physics Letters, vol. 95,
no. 18, 2009.
mla: Feste, Sebastian F., et al. “Measurement of Effective Electron Mass in Biaxial
Tensile Strained Silicon on Insulator.” Applied Physics Letters, vol. 95,
no. 18, 182101, American Institute of Physics, 2009, doi:10.1063/1.3254330.
short: S.F. Feste, T. Schäpers, D. Buca, Q.T. Zhao, J. Knoch, M. Bouhassoune, A.
Schindlmayr, S. Mantl, Applied Physics Letters 95 (2009).
date_created: 2020-08-28T22:24:30Z
date_updated: 2022-01-06T06:53:49Z
ddc:
- '530'
department:
- _id: '296'
doi: 10.1063/1.3254330
external_id:
isi:
- '000271666800034'
file:
- access_level: open_access
content_type: application/pdf
creator: schindlm
date_created: 2020-08-28T22:28:31Z
date_updated: 2020-08-30T15:29:43Z
description: © 2009 American Institute of Physics
file_id: '18633'
file_name: 1.3254330.pdf
file_size: 198836
relation: main_file
title: Measurement of effective electron mass in biaxial tensile strained silicon
on insulator
file_date_updated: 2020-08-30T15:29:43Z
has_accepted_license: '1'
intvolume: ' 95'
isi: '1'
issue: '18'
language:
- iso: eng
oa: '1'
publication: Applied Physics Letters
publication_identifier:
eissn:
- 1077-3118
issn:
- 0003-6951
publication_status: published
publisher: American Institute of Physics
quality_controlled: '1'
status: public
title: Measurement of effective electron mass in biaxial tensile strained silicon
on insulator
type: journal_article
user_id: '458'
volume: 95
year: '2009'
...
---
_id: '7973'
article_number: '022107'
author:
- first_name: S. S.
full_name: Buchholz, S. S.
last_name: Buchholz
- first_name: S. F.
full_name: Fischer, S. F.
last_name: Fischer
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Buchholz SS, Fischer SF, Kunze U, Reuter D, Wieck AD. Nonlocal Aharonov–Bohm
conductance oscillations in an asymmetric quantum ring. Applied Physics Letters.
2009;94(2). doi:10.1063/1.3069281
apa: Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., & Wieck, A. D.
(2009). Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum
ring. Applied Physics Letters, 94(2). https://doi.org/10.1063/1.3069281
bibtex: '@article{Buchholz_Fischer_Kunze_Reuter_Wieck_2009, title={Nonlocal Aharonov–Bohm
conductance oscillations in an asymmetric quantum ring}, volume={94}, DOI={10.1063/1.3069281}, number={2022107},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Buchholz,
S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2009}
}'
chicago: Buchholz, S. S., S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck.
“Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.”
Applied Physics Letters 94, no. 2 (2009). https://doi.org/10.1063/1.3069281.
ieee: S. S. Buchholz, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Nonlocal
Aharonov–Bohm conductance oscillations in an asymmetric quantum ring,” Applied
Physics Letters, vol. 94, no. 2, 2009.
mla: Buchholz, S. S., et al. “Nonlocal Aharonov–Bohm Conductance Oscillations in
an Asymmetric Quantum Ring.” Applied Physics Letters, vol. 94, no. 2, 022107,
AIP Publishing, 2009, doi:10.1063/1.3069281.
short: S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics
Letters 94 (2009).
date_created: 2019-02-21T13:28:29Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3069281
intvolume: ' 94'
issue: '2'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring
type: journal_article
user_id: '42514'
volume: 94
year: '2009'
...
---
_id: '8579'
article_number: '022107'
author:
- first_name: S. S.
full_name: Buchholz, S. S.
last_name: Buchholz
- first_name: S. F.
full_name: Fischer, S. F.
last_name: Fischer
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Buchholz SS, Fischer SF, Kunze U, Reuter D, Wieck AD. Nonlocal Aharonov–Bohm
conductance oscillations in an asymmetric quantum ring. Applied Physics Letters.
2009. doi:10.1063/1.3069281
apa: Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., & Wieck, A. D.
(2009). Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum
ring. Applied Physics Letters. https://doi.org/10.1063/1.3069281
bibtex: '@article{Buchholz_Fischer_Kunze_Reuter_Wieck_2009, title={Nonlocal Aharonov–Bohm
conductance oscillations in an asymmetric quantum ring}, DOI={10.1063/1.3069281},
number={022107}, journal={Applied Physics Letters}, author={Buchholz, S. S. and
Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2009} }'
chicago: Buchholz, S. S., S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck.
“Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.”
Applied Physics Letters, 2009. https://doi.org/10.1063/1.3069281.
ieee: S. S. Buchholz, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Nonlocal
Aharonov–Bohm conductance oscillations in an asymmetric quantum ring,” Applied
Physics Letters, 2009.
mla: Buchholz, S. S., et al. “Nonlocal Aharonov–Bohm Conductance Oscillations in
an Asymmetric Quantum Ring.” Applied Physics Letters, 022107, 2009, doi:10.1063/1.3069281.
short: S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics
Letters (2009).
date_created: 2019-03-26T08:34:37Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3069281
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '8580'
article_number: '023107'
author:
- first_name: J. H.
full_name: Blokland, J. H.
last_name: Blokland
- first_name: M.
full_name: Bozkurt, M.
last_name: Bozkurt
- first_name: J. M.
full_name: Ulloa, J. M.
last_name: Ulloa
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: P. M.
full_name: Koenraad, P. M.
last_name: Koenraad
- first_name: P. C. M.
full_name: Christianen, P. C. M.
last_name: Christianen
- first_name: J. C.
full_name: Maan, J. C.
last_name: Maan
citation:
ama: Blokland JH, Bozkurt M, Ulloa JM, et al. Ellipsoidal InAs quantum dots observed
by cross-sectional scanning tunneling microscopy. Applied Physics Letters.
2009. doi:10.1063/1.3072366
apa: Blokland, J. H., Bozkurt, M., Ulloa, J. M., Reuter, D., Wieck, A. D., Koenraad,
P. M., … Maan, J. C. (2009). Ellipsoidal InAs quantum dots observed by cross-sectional
scanning tunneling microscopy. Applied Physics Letters. https://doi.org/10.1063/1.3072366
bibtex: '@article{Blokland_Bozkurt_Ulloa_Reuter_Wieck_Koenraad_Christianen_Maan_2009,
title={Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling
microscopy}, DOI={10.1063/1.3072366},
number={023107}, journal={Applied Physics Letters}, author={Blokland, J. H. and
Bozkurt, M. and Ulloa, J. M. and Reuter, Dirk and Wieck, A. D. and Koenraad, P.
M. and Christianen, P. C. M. and Maan, J. C.}, year={2009} }'
chicago: Blokland, J. H., M. Bozkurt, J. M. Ulloa, Dirk Reuter, A. D. Wieck, P.
M. Koenraad, P. C. M. Christianen, and J. C. Maan. “Ellipsoidal InAs Quantum Dots
Observed by Cross-Sectional Scanning Tunneling Microscopy.” Applied Physics
Letters, 2009. https://doi.org/10.1063/1.3072366.
ieee: J. H. Blokland et al., “Ellipsoidal InAs quantum dots observed by cross-sectional
scanning tunneling microscopy,” Applied Physics Letters, 2009.
mla: Blokland, J. H., et al. “Ellipsoidal InAs Quantum Dots Observed by Cross-Sectional
Scanning Tunneling Microscopy.” Applied Physics Letters, 023107, 2009,
doi:10.1063/1.3072366.
short: J.H. Blokland, M. Bozkurt, J.M. Ulloa, D. Reuter, A.D. Wieck, P.M. Koenraad,
P.C.M. Christianen, J.C. Maan, Applied Physics Letters (2009).
date_created: 2019-03-26T08:42:07Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3072366
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling
microscopy
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '8585'
article_number: '022113'
author:
- first_name: B.
full_name: Marquardt, B.
last_name: Marquardt
- first_name: M.
full_name: Geller, M.
last_name: Geller
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Marquardt B, Geller M, Lorke A, Reuter D, Wieck AD. Using a two-dimensional
electron gas to study nonequilibrium tunneling dynamics and charge storage in
self-assembled quantum dots. Applied Physics Letters. 2009. doi:10.1063/1.3175724
apa: Marquardt, B., Geller, M., Lorke, A., Reuter, D., & Wieck, A. D. (2009).
Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics
and charge storage in self-assembled quantum dots. Applied Physics Letters.
https://doi.org/10.1063/1.3175724
bibtex: '@article{Marquardt_Geller_Lorke_Reuter_Wieck_2009, title={Using a two-dimensional
electron gas to study nonequilibrium tunneling dynamics and charge storage in
self-assembled quantum dots}, DOI={10.1063/1.3175724},
number={022113}, journal={Applied Physics Letters}, author={Marquardt, B. and
Geller, M. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2009} }'
chicago: Marquardt, B., M. Geller, A. Lorke, Dirk Reuter, and A. D. Wieck. “Using
a Two-Dimensional Electron Gas to Study Nonequilibrium Tunneling Dynamics and
Charge Storage in Self-Assembled Quantum Dots.” Applied Physics Letters,
2009. https://doi.org/10.1063/1.3175724.
ieee: B. Marquardt, M. Geller, A. Lorke, D. Reuter, and A. D. Wieck, “Using a two-dimensional
electron gas to study nonequilibrium tunneling dynamics and charge storage in
self-assembled quantum dots,” Applied Physics Letters, 2009.
mla: Marquardt, B., et al. “Using a Two-Dimensional Electron Gas to Study Nonequilibrium
Tunneling Dynamics and Charge Storage in Self-Assembled Quantum Dots.” Applied
Physics Letters, 022113, 2009, doi:10.1063/1.3175724.
short: B. Marquardt, M. Geller, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics
Letters (2009).
date_created: 2019-03-26T08:55:40Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3175724
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics
and charge storage in self-assembled quantum dots
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '7640'
article_number: '193111'
author:
- first_name: W.
full_name: Lei, W.
last_name: Lei
- first_name: M.
full_name: Offer, M.
last_name: Offer
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: C.
full_name: Notthoff, C.
last_name: Notthoff
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: O.
full_name: Wibbelhoff, O.
last_name: Wibbelhoff
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Lei W, Offer M, Lorke A, et al. Probing the band structure of InAs∕GaAs quantum
dots by capacitance-voltage and photoluminescence spectroscopy. Applied Physics
Letters. 2008;92(19). doi:10.1063/1.2920439
apa: Lei, W., Offer, M., Lorke, A., Notthoff, C., Meier, C., Wibbelhoff, O., &
Wieck, A. D. (2008). Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage
and photoluminescence spectroscopy. Applied Physics Letters, 92(19).
https://doi.org/10.1063/1.2920439
bibtex: '@article{Lei_Offer_Lorke_Notthoff_Meier_Wibbelhoff_Wieck_2008, title={Probing
the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence
spectroscopy}, volume={92}, DOI={10.1063/1.2920439},
number={19193111}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Lei, W. and Offer, M. and Lorke, A. and Notthoff, C. and Meier, Cedrik
and Wibbelhoff, O. and Wieck, A. D.}, year={2008} }'
chicago: Lei, W., M. Offer, A. Lorke, C. Notthoff, Cedrik Meier, O. Wibbelhoff,
and A. D. Wieck. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage
and Photoluminescence Spectroscopy.” Applied Physics Letters 92, no. 19
(2008). https://doi.org/10.1063/1.2920439.
ieee: W. Lei et al., “Probing the band structure of InAs∕GaAs quantum dots
by capacitance-voltage and photoluminescence spectroscopy,” Applied Physics
Letters, vol. 92, no. 19, 2008.
mla: Lei, W., et al. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage
and Photoluminescence Spectroscopy.” Applied Physics Letters, vol. 92,
no. 19, 193111, AIP Publishing, 2008, doi:10.1063/1.2920439.
short: W. Lei, M. Offer, A. Lorke, C. Notthoff, C. Meier, O. Wibbelhoff, A.D. Wieck,
Applied Physics Letters 92 (2008).
date_created: 2019-02-13T11:30:23Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2920439
extern: '1'
intvolume: ' 92'
issue: '19'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage
and photoluminescence spectroscopy
type: journal_article
user_id: '20798'
volume: 92
year: '2008'
...
---
_id: '8603'
article_number: '112111'
author:
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: A.
full_name: Melnikov, A.
last_name: Melnikov
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Y.
full_name: Cordier, Y.
last_name: Cordier
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Lo F-Y, Melnikov A, Reuter D, Cordier Y, Wieck AD. Magnetotransport in Gd-implanted
wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. Applied
Physics Letters. 2008. doi:10.1063/1.2899968
apa: Lo, F.-Y., Melnikov, A., Reuter, D., Cordier, Y., & Wieck, A. D. (2008).
Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility
transistor structures. Applied Physics Letters. https://doi.org/10.1063/1.2899968
bibtex: '@article{Lo_Melnikov_Reuter_Cordier_Wieck_2008, title={Magnetotransport
in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures},
DOI={10.1063/1.2899968}, number={112111},
journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov, A. and Reuter,
Dirk and Cordier, Y. and Wieck, A. D.}, year={2008} }'
chicago: Lo, F.-Y., A. Melnikov, Dirk Reuter, Y. Cordier, and A. D. Wieck. “Magnetotransport
in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.”
Applied Physics Letters, 2008. https://doi.org/10.1063/1.2899968.
ieee: F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, “Magnetotransport
in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures,”
Applied Physics Letters, 2008.
mla: Lo, F. Y., et al. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN
High Electron Mobility Transistor Structures.” Applied Physics Letters,
112111, 2008, doi:10.1063/1.2899968.
short: F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, A.D. Wieck, Applied Physics
Letters (2008).
date_created: 2019-03-26T09:26:36Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2899968
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility
transistor structures
type: journal_article
user_id: '42514'
year: '2008'
...
---
_id: '8607'
article_number: '241920'
author:
- first_name: P. E.
full_name: Hohage, P. E.
last_name: Hohage
- first_name: J.
full_name: Nannen, J.
last_name: Nannen
- first_name: S.
full_name: Halm, S.
last_name: Halm
- first_name: G.
full_name: Bacher, G.
last_name: Bacher
- first_name: M.
full_name: Wahle, M.
last_name: Wahle
- first_name: S. F.
full_name: Fischer, S. F.
last_name: Fischer
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Hohage PE, Nannen J, Halm S, et al. Coherent spin dynamics in Permalloy-GaAs
hybrids at room temperature. Applied Physics Letters. 2008. doi:10.1063/1.2943279
apa: Hohage, P. E., Nannen, J., Halm, S., Bacher, G., Wahle, M., Fischer, S. F.,
… Wieck, A. D. (2008). Coherent spin dynamics in Permalloy-GaAs hybrids at room
temperature. Applied Physics Letters. https://doi.org/10.1063/1.2943279
bibtex: '@article{Hohage_Nannen_Halm_Bacher_Wahle_Fischer_Kunze_Reuter_Wieck_2008,
title={Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature},
DOI={10.1063/1.2943279}, number={241920},
journal={Applied Physics Letters}, author={Hohage, P. E. and Nannen, J. and Halm,
S. and Bacher, G. and Wahle, M. and Fischer, S. F. and Kunze, U. and Reuter, Dirk
and Wieck, A. D.}, year={2008} }'
chicago: Hohage, P. E., J. Nannen, S. Halm, G. Bacher, M. Wahle, S. F. Fischer,
U. Kunze, Dirk Reuter, and A. D. Wieck. “Coherent Spin Dynamics in Permalloy-GaAs
Hybrids at Room Temperature.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2943279.
ieee: P. E. Hohage et al., “Coherent spin dynamics in Permalloy-GaAs hybrids
at room temperature,” Applied Physics Letters, 2008.
mla: Hohage, P. E., et al. “Coherent Spin Dynamics in Permalloy-GaAs Hybrids at
Room Temperature.” Applied Physics Letters, 241920, 2008, doi:10.1063/1.2943279.
short: P.E. Hohage, J. Nannen, S. Halm, G. Bacher, M. Wahle, S.F. Fischer, U. Kunze,
D. Reuter, A.D. Wieck, Applied Physics Letters (2008).
date_created: 2019-03-26T09:51:24Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2943279
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature
type: journal_article
user_id: '42514'
year: '2008'
...
---
_id: '8608'
article_number: '242102'
author:
- first_name: S.
full_name: Hövel, S.
last_name: Hövel
- first_name: N. C.
full_name: Gerhardt, N. C.
last_name: Gerhardt
- first_name: M. R.
full_name: Hofmann, M. R.
last_name: Hofmann
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: E.
full_name: Schuster, E.
last_name: Schuster
- first_name: W.
full_name: Keune, W.
last_name: Keune
- first_name: H.
full_name: Wende, H.
last_name: Wende
- first_name: O.
full_name: Petracic, O.
last_name: Petracic
- first_name: K.
full_name: Westerholt, K.
last_name: Westerholt
citation:
ama: Hövel S, Gerhardt NC, Hofmann MR, et al. Electrical detection of photoinduced
spins both at room temperature and in remanence. Applied Physics Letters.
2008. doi:10.1063/1.2948856
apa: Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Reuter, D., Wieck, A.
D., … Westerholt, K. (2008). Electrical detection of photoinduced spins both at
room temperature and in remanence. Applied Physics Letters. https://doi.org/10.1063/1.2948856
bibtex: '@article{Hövel_Gerhardt_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Wende_Petracic_et
al._2008, title={Electrical detection of photoinduced spins both at room temperature
and in remanence}, DOI={10.1063/1.2948856},
number={242102}, journal={Applied Physics Letters}, author={Hövel, S. and Gerhardt,
N. C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster,
E. and Keune, W. and Wende, H. and Petracic, O. and et al.}, year={2008} }'
chicago: Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, Dirk Reuter, A. D.
Wieck, E. Schuster, et al. “Electrical Detection of Photoinduced Spins Both at
Room Temperature and in Remanence.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2948856.
ieee: S. Hövel et al., “Electrical detection of photoinduced spins both at
room temperature and in remanence,” Applied Physics Letters, 2008.
mla: Hövel, S., et al. “Electrical Detection of Photoinduced Spins Both at Room
Temperature and in Remanence.” Applied Physics Letters, 242102, 2008, doi:10.1063/1.2948856.
short: S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D. Wieck, E.
Schuster, W. Keune, H. Wende, O. Petracic, K. Westerholt, Applied Physics Letters
(2008).
date_created: 2019-03-26T09:52:27Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2948856
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Electrical detection of photoinduced spins both at room temperature and in
remanence
type: journal_article
user_id: '42514'
year: '2008'
...
---
_id: '8609'
article_number: '021117'
author:
- first_name: S.
full_name: Hövel, S.
last_name: Hövel
- first_name: N. C.
full_name: Gerhardt, N. C.
last_name: Gerhardt
- first_name: M. R.
full_name: Hofmann, M. R.
last_name: Hofmann
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: A.
full_name: Ludwig, A.
last_name: Ludwig
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: E.
full_name: Schuster, E.
last_name: Schuster
- first_name: H.
full_name: Wende, H.
last_name: Wende
- first_name: W.
full_name: Keune, W.
last_name: Keune
- first_name: O.
full_name: Petracic, O.
last_name: Petracic
- first_name: K.
full_name: Westerholt, K.
last_name: Westerholt
citation:
ama: Hövel S, Gerhardt NC, Hofmann MR, et al. Room temperature electrical spin injection
in remanence. Applied Physics Letters. 2008. doi:10.1063/1.2957469
apa: Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Ludwig, A., Reuter,
D., … Westerholt, K. (2008). Room temperature electrical spin injection in remanence.
Applied Physics Letters. https://doi.org/10.1063/1.2957469
bibtex: '@article{Hövel_Gerhardt_Hofmann_Lo_Ludwig_Reuter_Wieck_Schuster_Wende_Keune_et
al._2008, title={Room temperature electrical spin injection in remanence}, DOI={10.1063/1.2957469}, number={021117},
journal={Applied Physics Letters}, author={Hövel, S. and Gerhardt, N. C. and Hofmann,
M. R. and Lo, F.-Y. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Schuster,
E. and Wende, H. and Keune, W. and et al.}, year={2008} }'
chicago: Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, A. Ludwig, Dirk Reuter,
A. D. Wieck, et al. “Room Temperature Electrical Spin Injection in Remanence.”
Applied Physics Letters, 2008. https://doi.org/10.1063/1.2957469.
ieee: S. Hövel et al., “Room temperature electrical spin injection in remanence,”
Applied Physics Letters, 2008.
mla: Hövel, S., et al. “Room Temperature Electrical Spin Injection in Remanence.”
Applied Physics Letters, 021117, 2008, doi:10.1063/1.2957469.
short: S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A.D.
Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt, Applied Physics
Letters (2008).
date_created: 2019-03-26T09:53:44Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2957469
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Room temperature electrical spin injection in remanence
type: journal_article
user_id: '42514'
year: '2008'
...
---
_id: '39749'
article_number: '131903'
author:
- first_name: A.
full_name: Hoischen, A.
last_name: Hoischen
- first_name: S. A.
full_name: Benning, S. A.
last_name: Benning
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Hoischen A, Benning SA, Kitzerow H-S. Submicrometer periodic patterns fixed
by photopolymerization of dissipative structures. Applied Physics Letters.
2008;93(13). doi:10.1063/1.2990762
apa: Hoischen, A., Benning, S. A., & Kitzerow, H.-S. (2008). Submicrometer periodic
patterns fixed by photopolymerization of dissipative structures. Applied Physics
Letters, 93(13), Article 131903. https://doi.org/10.1063/1.2990762
bibtex: '@article{Hoischen_Benning_Kitzerow_2008, title={Submicrometer periodic
patterns fixed by photopolymerization of dissipative structures}, volume={93},
DOI={10.1063/1.2990762}, number={13131903},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hoischen,
A. and Benning, S. A. and Kitzerow, Heinz-Siegfried}, year={2008} }'
chicago: Hoischen, A., S. A. Benning, and Heinz-Siegfried Kitzerow. “Submicrometer
Periodic Patterns Fixed by Photopolymerization of Dissipative Structures.” Applied
Physics Letters 93, no. 13 (2008). https://doi.org/10.1063/1.2990762.
ieee: 'A. Hoischen, S. A. Benning, and H.-S. Kitzerow, “Submicrometer periodic patterns
fixed by photopolymerization of dissipative structures,” Applied Physics Letters,
vol. 93, no. 13, Art. no. 131903, 2008, doi: 10.1063/1.2990762.'
mla: Hoischen, A., et al. “Submicrometer Periodic Patterns Fixed by Photopolymerization
of Dissipative Structures.” Applied Physics Letters, vol. 93, no. 13, 131903,
AIP Publishing, 2008, doi:10.1063/1.2990762.
short: A. Hoischen, S.A. Benning, H.-S. Kitzerow, Applied Physics Letters 93 (2008).
date_created: 2023-01-24T18:52:43Z
date_updated: 2023-01-24T18:53:04Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.2990762
intvolume: ' 93'
issue: '13'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Submicrometer periodic patterns fixed by photopolymerization of dissipative
structures
type: journal_article
user_id: '254'
volume: 93
year: '2008'
...
---
_id: '39751'
article_number: '183304'
author:
- first_name: Andreas
full_name: Redler, Andreas
last_name: Redler
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Redler A, Kitzerow H-S. Influence of doping on the photorefractive properties
of a polymer-dispersed liquid crystal. Applied Physics Letters. 2008;93(18).
doi:10.1063/1.3021364
apa: Redler, A., & Kitzerow, H.-S. (2008). Influence of doping on the photorefractive
properties of a polymer-dispersed liquid crystal. Applied Physics Letters,
93(18), Article 183304. https://doi.org/10.1063/1.3021364
bibtex: '@article{Redler_Kitzerow_2008, title={Influence of doping on the photorefractive
properties of a polymer-dispersed liquid crystal}, volume={93}, DOI={10.1063/1.3021364},
number={18183304}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Redler, Andreas and Kitzerow, Heinz-Siegfried}, year={2008} }'
chicago: Redler, Andreas, and Heinz-Siegfried Kitzerow. “Influence of Doping on
the Photorefractive Properties of a Polymer-Dispersed Liquid Crystal.” Applied
Physics Letters 93, no. 18 (2008). https://doi.org/10.1063/1.3021364.
ieee: 'A. Redler and H.-S. Kitzerow, “Influence of doping on the photorefractive
properties of a polymer-dispersed liquid crystal,” Applied Physics Letters,
vol. 93, no. 18, Art. no. 183304, 2008, doi: 10.1063/1.3021364.'
mla: Redler, Andreas, and Heinz-Siegfried Kitzerow. “Influence of Doping on the
Photorefractive Properties of a Polymer-Dispersed Liquid Crystal.” Applied
Physics Letters, vol. 93, no. 18, 183304, AIP Publishing, 2008, doi:10.1063/1.3021364.
short: A. Redler, H.-S. Kitzerow, Applied Physics Letters 93 (2008).
date_created: 2023-01-24T18:53:20Z
date_updated: 2023-01-24T18:53:34Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.3021364
intvolume: ' 93'
issue: '18'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Influence of doping on the photorefractive properties of a polymer-dispersed
liquid crystal
type: journal_article
user_id: '254'
volume: 93
year: '2008'
...
---
_id: '26076'
article_number: '151109'
author:
- first_name: Xiao-Feng
full_name: Han, Xiao-Feng
last_name: Han
- first_name: Yu-Xiang
full_name: Weng, Yu-Xiang
last_name: Weng
- first_name: Rui
full_name: Wang, Rui
last_name: Wang
- first_name: Xi-Hao
full_name: Chen, Xi-Hao
last_name: Chen
- first_name: Kai Hong
full_name: Luo, Kai Hong
id: '36389'
last_name: Luo
orcid: 0000-0003-1008-4976
- first_name: Ling-An
full_name: Wu, Ling-An
last_name: Wu
- first_name: Jimin
full_name: Zhao, Jimin
last_name: Zhao
citation:
ama: Han X-F, Weng Y-X, Wang R, et al. Single-photon level ultrafast all-optical
switching. Applied Physics Letters. Published online 2008. doi:10.1063/1.2909540
apa: Han, X.-F., Weng, Y.-X., Wang, R., Chen, X.-H., Luo, K. H., Wu, L.-A., &
Zhao, J. (2008). Single-photon level ultrafast all-optical switching. Applied
Physics Letters, Article 151109. https://doi.org/10.1063/1.2909540
bibtex: '@article{Han_Weng_Wang_Chen_Luo_Wu_Zhao_2008, title={Single-photon level
ultrafast all-optical switching}, DOI={10.1063/1.2909540},
number={151109}, journal={Applied Physics Letters}, author={Han, Xiao-Feng and
Weng, Yu-Xiang and Wang, Rui and Chen, Xi-Hao and Luo, Kai Hong and Wu, Ling-An
and Zhao, Jimin}, year={2008} }'
chicago: Han, Xiao-Feng, Yu-Xiang Weng, Rui Wang, Xi-Hao Chen, Kai Hong Luo, Ling-An
Wu, and Jimin Zhao. “Single-Photon Level Ultrafast All-Optical Switching.” Applied
Physics Letters, 2008. https://doi.org/10.1063/1.2909540.
ieee: 'X.-F. Han et al., “Single-photon level ultrafast all-optical switching,”
Applied Physics Letters, Art. no. 151109, 2008, doi: 10.1063/1.2909540.'
mla: Han, Xiao-Feng, et al. “Single-Photon Level Ultrafast All-Optical Switching.”
Applied Physics Letters, 151109, 2008, doi:10.1063/1.2909540.
short: X.-F. Han, Y.-X. Weng, R. Wang, X.-H. Chen, K.H. Luo, L.-A. Wu, J. Zhao,
Applied Physics Letters (2008).
date_created: 2021-10-12T08:46:00Z
date_updated: 2023-01-26T10:08:30Z
doi: 10.1063/1.2909540
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Single-photon level ultrafast all-optical switching
type: journal_article
user_id: '36389'
year: '2008'
...
---
_id: '1761'
article_number: '151109'
author:
- first_name: Carsten
full_name: Rockstuhl, Carsten
last_name: Rockstuhl
- first_name: Falk
full_name: Lederer, Falk
last_name: Lederer
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: Harald
full_name: Giessen, Harald
last_name: Giessen
citation:
ama: Rockstuhl C, Lederer F, Zentgraf T, Giessen H. Enhanced transmission of periodic,
quasiperiodic, and random nanoaperture arrays. Applied Physics Letters.
2007;91(15). doi:10.1063/1.2799240
apa: Rockstuhl, C., Lederer, F., Zentgraf, T., & Giessen, H. (2007). Enhanced
transmission of periodic, quasiperiodic, and random nanoaperture arrays. Applied
Physics Letters, 91(15). https://doi.org/10.1063/1.2799240
bibtex: '@article{Rockstuhl_Lederer_Zentgraf_Giessen_2007, title={Enhanced transmission
of periodic, quasiperiodic, and random nanoaperture arrays}, volume={91}, DOI={10.1063/1.2799240}, number={15151109},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Rockstuhl,
Carsten and Lederer, Falk and Zentgraf, Thomas and Giessen, Harald}, year={2007}
}'
chicago: Rockstuhl, Carsten, Falk Lederer, Thomas Zentgraf, and Harald Giessen.
“Enhanced Transmission of Periodic, Quasiperiodic, and Random Nanoaperture Arrays.”
Applied Physics Letters 91, no. 15 (2007). https://doi.org/10.1063/1.2799240.
ieee: C. Rockstuhl, F. Lederer, T. Zentgraf, and H. Giessen, “Enhanced transmission
of periodic, quasiperiodic, and random nanoaperture arrays,” Applied Physics
Letters, vol. 91, no. 15, 2007.
mla: Rockstuhl, Carsten, et al. “Enhanced Transmission of Periodic, Quasiperiodic,
and Random Nanoaperture Arrays.” Applied Physics Letters, vol. 91, no.
15, 151109, AIP Publishing, 2007, doi:10.1063/1.2799240.
short: C. Rockstuhl, F. Lederer, T. Zentgraf, H. Giessen, Applied Physics Letters
91 (2007).
date_created: 2018-03-23T13:07:38Z
date_updated: 2022-01-06T06:53:16Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2799240
intvolume: ' 91'
issue: '15'
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays
type: journal_article
user_id: '30525'
volume: 91
year: '2007'
...
---
_id: '7644'
article_number: '143113'
author:
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Kevin
full_name: Hennessy, Kevin
last_name: Hennessy
citation:
ama: Meier C, Hennessy K. Technique for tilting GaAs photonic crystal nanocavities
out of plane. Applied Physics Letters. 2007;90(14). doi:10.1063/1.2719612
apa: Meier, C., & Hennessy, K. (2007). Technique for tilting GaAs photonic crystal
nanocavities out of plane. Applied Physics Letters, 90(14). https://doi.org/10.1063/1.2719612
bibtex: '@article{Meier_Hennessy_2007, title={Technique for tilting GaAs photonic
crystal nanocavities out of plane}, volume={90}, DOI={10.1063/1.2719612},
number={14143113}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Meier, Cedrik and Hennessy, Kevin}, year={2007} }'
chicago: Meier, Cedrik, and Kevin Hennessy. “Technique for Tilting GaAs Photonic
Crystal Nanocavities out of Plane.” Applied Physics Letters 90, no. 14
(2007). https://doi.org/10.1063/1.2719612.
ieee: C. Meier and K. Hennessy, “Technique for tilting GaAs photonic crystal nanocavities
out of plane,” Applied Physics Letters, vol. 90, no. 14, 2007.
mla: Meier, Cedrik, and Kevin Hennessy. “Technique for Tilting GaAs Photonic Crystal
Nanocavities out of Plane.” Applied Physics Letters, vol. 90, no. 14, 143113,
AIP Publishing, 2007, doi:10.1063/1.2719612.
short: C. Meier, K. Hennessy, Applied Physics Letters 90 (2007).
date_created: 2019-02-13T11:34:33Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2719612
extern: '1'
intvolume: ' 90'
issue: '14'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Technique for tilting GaAs photonic crystal nanocavities out of plane
type: journal_article
user_id: '20798'
volume: 90
year: '2007'
...
---
_id: '8630'
article_number: '262505'
author:
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: A.
full_name: Melnikov, A.
last_name: Melnikov
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: V.
full_name: Ney, V.
last_name: Ney
- first_name: T.
full_name: Kammermeier, T.
last_name: Kammermeier
- first_name: A.
full_name: Ney, A.
last_name: Ney
- first_name: J.
full_name: Schörmann, J.
last_name: Schörmann
- first_name: S.
full_name: Potthast, S.
last_name: Potthast
- first_name: D. J.
full_name: As, D. J.
last_name: As
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
citation:
ama: Lo F-Y, Melnikov A, Reuter D, et al. Magnetic and structural properties of
Gd-implanted zinc-blende GaN. Applied Physics Letters. 2007. doi:10.1063/1.2753113
apa: Lo, F.-Y., Melnikov, A., Reuter, D., Wieck, A. D., Ney, V., Kammermeier, T.,
… Lischka, K. (2007). Magnetic and structural properties of Gd-implanted zinc-blende
GaN. Applied Physics Letters. https://doi.org/10.1063/1.2753113
bibtex: '@article{Lo_Melnikov_Reuter_Wieck_Ney_Kammermeier_Ney_Schörmann_Potthast_As_et
al._2007, title={Magnetic and structural properties of Gd-implanted zinc-blende
GaN}, DOI={10.1063/1.2753113},
number={262505}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov,
A. and Reuter, Dirk and Wieck, A. D. and Ney, V. and Kammermeier, T. and Ney,
A. and Schörmann, J. and Potthast, S. and As, D. J. and et al.}, year={2007} }'
chicago: Lo, F.-Y., A. Melnikov, Dirk Reuter, A. D. Wieck, V. Ney, T. Kammermeier,
A. Ney, et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende
GaN.” Applied Physics Letters, 2007. https://doi.org/10.1063/1.2753113.
ieee: F.-Y. Lo et al., “Magnetic and structural properties of Gd-implanted
zinc-blende GaN,” Applied Physics Letters, 2007.
mla: Lo, F. Y., et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende
GaN.” Applied Physics Letters, 262505, 2007, doi:10.1063/1.2753113.
short: F.-Y. Lo, A. Melnikov, D. Reuter, A.D. Wieck, V. Ney, T. Kammermeier, A.
Ney, J. Schörmann, S. Potthast, D.J. As, K. Lischka, Applied Physics Letters (2007).
date_created: 2019-03-26T10:23:42Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2753113
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Magnetic and structural properties of Gd-implanted zinc-blende GaN
type: journal_article
user_id: '42514'
year: '2007'
...
---
_id: '8632'
article_number: '123108'
author:
- first_name: M.
full_name: Mehta, M.
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A.
full_name: Melnikov, A.
last_name: Melnikov
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: A.
full_name: Remhof, A.
last_name: Remhof
citation:
ama: Mehta M, Reuter D, Melnikov A, Wieck AD, Remhof A. Focused ion beam implantation
induced site-selective growth of InAs quantum dots. Applied Physics Letters.
2007. doi:10.1063/1.2786836
apa: Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., & Remhof, A. (2007).
Focused ion beam implantation induced site-selective growth of InAs quantum dots.
Applied Physics Letters. https://doi.org/10.1063/1.2786836
bibtex: '@article{Mehta_Reuter_Melnikov_Wieck_Remhof_2007, title={Focused ion beam
implantation induced site-selective growth of InAs quantum dots}, DOI={10.1063/1.2786836},
number={123108}, journal={Applied Physics Letters}, author={Mehta, M. and Reuter,
Dirk and Melnikov, A. and Wieck, A. D. and Remhof, A.}, year={2007} }'
chicago: Mehta, M., Dirk Reuter, A. Melnikov, A. D. Wieck, and A. Remhof. “Focused
Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” Applied
Physics Letters, 2007. https://doi.org/10.1063/1.2786836.
ieee: M. Mehta, D. Reuter, A. Melnikov, A. D. Wieck, and A. Remhof, “Focused ion
beam implantation induced site-selective growth of InAs quantum dots,” Applied
Physics Letters, 2007.
mla: Mehta, M., et al. “Focused Ion Beam Implantation Induced Site-Selective Growth
of InAs Quantum Dots.” Applied Physics Letters, 123108, 2007, doi:10.1063/1.2786836.
short: M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, A. Remhof, Applied Physics
Letters (2007).
date_created: 2019-03-26T10:26:08Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2786836
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Focused ion beam implantation induced site-selective growth of InAs quantum
dots
type: journal_article
user_id: '42514'
year: '2007'
...
---
_id: '25986'
abstract:
- lang: eng
text: "The authors report the synthesis of nanoporous ZnO, which exhibits a periodically
ordered, uniform pore system with crystalline pore walls. The crystalline structure
is investigated by x-ray diffraction, transmission electron microscopy, and selected
area electron diffraction. The large specific surface area and the uniformity
of the pore system are confirmed by nitrogen physisorption. Raman spectroscopy
along with low-temperature photoluminescence measurements confirms the high degree
of crystallinity and gives insight into defects participating in the radiative
recombination processes.\r\nThe authors thank Günter Koch for recording the TEM
images and Marie-Luise Wolff for valuable help in the laboratory one of the authors
(M.T.) thanks Michael Fröba for the continuous support."
article_number: '123108'
article_type: original
author:
- first_name: T.
full_name: Waitz, T.
last_name: Waitz
- first_name: Michael
full_name: Tiemann, Michael
id: '23547'
last_name: Tiemann
orcid: 0000-0003-1711-2722
- first_name: P. J.
full_name: Klar, P. J.
last_name: Klar
- first_name: J.
full_name: Sann, J.
last_name: Sann
- first_name: J.
full_name: Stehr, J.
last_name: Stehr
- first_name: B. K.
full_name: Meyer, B. K.
last_name: Meyer
citation:
ama: Waitz T, Tiemann M, Klar PJ, Sann J, Stehr J, Meyer BK. Crystalline ZnO with
an enhanced surface area obtained by nanocasting. Applied Physics Letters.
Published online 2007. doi:10.1063/1.2713872
apa: Waitz, T., Tiemann, M., Klar, P. J., Sann, J., Stehr, J., & Meyer, B. K.
(2007). Crystalline ZnO with an enhanced surface area obtained by nanocasting.
Applied Physics Letters, Article 123108. https://doi.org/10.1063/1.2713872
bibtex: '@article{Waitz_Tiemann_Klar_Sann_Stehr_Meyer_2007, title={Crystalline ZnO
with an enhanced surface area obtained by nanocasting}, DOI={10.1063/1.2713872},
number={123108}, journal={Applied Physics Letters}, author={Waitz, T. and Tiemann,
Michael and Klar, P. J. and Sann, J. and Stehr, J. and Meyer, B. K.}, year={2007}
}'
chicago: Waitz, T., Michael Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer.
“Crystalline ZnO with an Enhanced Surface Area Obtained by Nanocasting.” Applied
Physics Letters, 2007. https://doi.org/10.1063/1.2713872.
ieee: 'T. Waitz, M. Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer, “Crystalline
ZnO with an enhanced surface area obtained by nanocasting,” Applied Physics
Letters, Art. no. 123108, 2007, doi: 10.1063/1.2713872.'
mla: Waitz, T., et al. “Crystalline ZnO with an Enhanced Surface Area Obtained by
Nanocasting.” Applied Physics Letters, 123108, 2007, doi:10.1063/1.2713872.
short: T. Waitz, M. Tiemann, P.J. Klar, J. Sann, J. Stehr, B.K. Meyer, Applied Physics
Letters (2007).
date_created: 2021-10-09T09:40:39Z
date_updated: 2023-03-09T08:49:01Z
department:
- _id: '35'
- _id: '2'
- _id: '307'
doi: 10.1063/1.2713872
extern: '1'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
quality_controlled: '1'
status: public
title: Crystalline ZnO with an enhanced surface area obtained by nanocasting
type: journal_article
user_id: '23547'
year: '2007'
...
---
_id: '39561'
article_number: '013501'
author:
- first_name: M.
full_name: Scharnberg, M.
last_name: Scharnberg
- first_name: V.
full_name: Zaporojtchenko, V.
last_name: Zaporojtchenko
- first_name: R.
full_name: Adelung, R.
last_name: Adelung
- first_name: F.
full_name: Faupel, F.
last_name: Faupel
- first_name: C.
full_name: Pannemann, C.
last_name: Pannemann
- first_name: T.
full_name: Diekmann, T.
last_name: Diekmann
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
citation:
ama: Scharnberg M, Zaporojtchenko V, Adelung R, et al. Tuning the threshold voltage
of organic field-effect transistors by an electret encapsulating layer. Applied
Physics Letters. 2007;90(1). doi:10.1063/1.2426926
apa: Scharnberg, M., Zaporojtchenko, V., Adelung, R., Faupel, F., Pannemann, C.,
Diekmann, T., & Hilleringmann, U. (2007). Tuning the threshold voltage of
organic field-effect transistors by an electret encapsulating layer. Applied
Physics Letters, 90(1), Article 013501. https://doi.org/10.1063/1.2426926
bibtex: '@article{Scharnberg_Zaporojtchenko_Adelung_Faupel_Pannemann_Diekmann_Hilleringmann_2007,
title={Tuning the threshold voltage of organic field-effect transistors by an
electret encapsulating layer}, volume={90}, DOI={10.1063/1.2426926},
number={1013501}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Scharnberg, M. and Zaporojtchenko, V. and Adelung, R. and Faupel, F. and
Pannemann, C. and Diekmann, T. and Hilleringmann, Ulrich}, year={2007} }'
chicago: Scharnberg, M., V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann,
T. Diekmann, and Ulrich Hilleringmann. “Tuning the Threshold Voltage of Organic
Field-Effect Transistors by an Electret Encapsulating Layer.” Applied Physics
Letters 90, no. 1 (2007). https://doi.org/10.1063/1.2426926.
ieee: 'M. Scharnberg et al., “Tuning the threshold voltage of organic field-effect
transistors by an electret encapsulating layer,” Applied Physics Letters,
vol. 90, no. 1, Art. no. 013501, 2007, doi: 10.1063/1.2426926.'
mla: Scharnberg, M., et al. “Tuning the Threshold Voltage of Organic Field-Effect
Transistors by an Electret Encapsulating Layer.” Applied Physics Letters,
vol. 90, no. 1, 013501, AIP Publishing, 2007, doi:10.1063/1.2426926.
short: M. Scharnberg, V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T.
Diekmann, U. Hilleringmann, Applied Physics Letters 90 (2007).
date_created: 2023-01-24T12:15:22Z
date_updated: 2023-03-21T10:15:06Z
department:
- _id: '59'
doi: 10.1063/1.2426926
intvolume: ' 90'
issue: '1'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Tuning the threshold voltage of organic field-effect transistors by an electret
encapsulating layer
type: journal_article
user_id: '20179'
volume: 90
year: '2007'
...
---
_id: '7651'
article_number: '031111'
author:
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Kevin
full_name: Hennessy, Kevin
last_name: Hennessy
- first_name: Elaine D.
full_name: Haberer, Elaine D.
last_name: Haberer
- first_name: Rajat
full_name: Sharma, Rajat
last_name: Sharma
- first_name: Yong-Seok
full_name: Choi, Yong-Seok
last_name: Choi
- first_name: Kelly
full_name: McGroddy, Kelly
last_name: McGroddy
- first_name: Stacia
full_name: Keller, Stacia
last_name: Keller
- first_name: Steven P.
full_name: DenBaars, Steven P.
last_name: DenBaars
- first_name: Shuji
full_name: Nakamura, Shuji
last_name: Nakamura
- first_name: Evelyn L.
full_name: Hu, Evelyn L.
last_name: Hu
citation:
ama: Meier C, Hennessy K, Haberer ED, et al. Visible resonant modes in GaN-based
photonic crystal membrane cavities. Applied Physics Letters. 2006;88(3).
doi:10.1063/1.2166680
apa: Meier, C., Hennessy, K., Haberer, E. D., Sharma, R., Choi, Y.-S., McGroddy,
K., … Hu, E. L. (2006). Visible resonant modes in GaN-based photonic crystal membrane
cavities. Applied Physics Letters, 88(3). https://doi.org/10.1063/1.2166680
bibtex: '@article{Meier_Hennessy_Haberer_Sharma_Choi_McGroddy_Keller_DenBaars_Nakamura_Hu_2006,
title={Visible resonant modes in GaN-based photonic crystal membrane cavities},
volume={88}, DOI={10.1063/1.2166680},
number={3031111}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Meier, Cedrik and Hennessy, Kevin and Haberer, Elaine D. and Sharma, Rajat
and Choi, Yong-Seok and McGroddy, Kelly and Keller, Stacia and DenBaars, Steven
P. and Nakamura, Shuji and Hu, Evelyn L.}, year={2006} }'
chicago: Meier, Cedrik, Kevin Hennessy, Elaine D. Haberer, Rajat Sharma, Yong-Seok
Choi, Kelly McGroddy, Stacia Keller, Steven P. DenBaars, Shuji Nakamura, and Evelyn
L. Hu. “Visible Resonant Modes in GaN-Based Photonic Crystal Membrane Cavities.”
Applied Physics Letters 88, no. 3 (2006). https://doi.org/10.1063/1.2166680.
ieee: C. Meier et al., “Visible resonant modes in GaN-based photonic crystal
membrane cavities,” Applied Physics Letters, vol. 88, no. 3, 2006.
mla: Meier, Cedrik, et al. “Visible Resonant Modes in GaN-Based Photonic Crystal
Membrane Cavities.” Applied Physics Letters, vol. 88, no. 3, 031111, AIP
Publishing, 2006, doi:10.1063/1.2166680.
short: C. Meier, K. Hennessy, E.D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy,
S. Keller, S.P. DenBaars, S. Nakamura, E.L. Hu, Applied Physics Letters 88 (2006).
date_created: 2019-02-13T11:41:17Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2166680
extern: '1'
intvolume: ' 88'
issue: '3'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Visible resonant modes in GaN-based photonic crystal membrane cavities
type: journal_article
user_id: '20798'
volume: 88
year: '2006'
...
---
_id: '8648'
article_number: '082110'
author:
- first_name: M.
full_name: Knop, M.
last_name: Knop
- first_name: U.
full_name: Wieser, U.
last_name: Wieser
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Knop M, Wieser U, Kunze U, Reuter D, Wieck AD. Ballistic rectification in an
asymmetric mesoscopic cross junction. Applied Physics Letters. 2006. doi:10.1063/1.2179618
apa: Knop, M., Wieser, U., Kunze, U., Reuter, D., & Wieck, A. D. (2006). Ballistic
rectification in an asymmetric mesoscopic cross junction. Applied Physics Letters.
https://doi.org/10.1063/1.2179618
bibtex: '@article{Knop_Wieser_Kunze_Reuter_Wieck_2006, title={Ballistic rectification
in an asymmetric mesoscopic cross junction}, DOI={10.1063/1.2179618},
number={082110}, journal={Applied Physics Letters}, author={Knop, M. and Wieser,
U. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2006} }'
chicago: Knop, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Ballistic
Rectification in an Asymmetric Mesoscopic Cross Junction.” Applied Physics
Letters, 2006. https://doi.org/10.1063/1.2179618.
ieee: M. Knop, U. Wieser, U. Kunze, D. Reuter, and A. D. Wieck, “Ballistic rectification
in an asymmetric mesoscopic cross junction,” Applied Physics Letters, 2006.
mla: Knop, M., et al. “Ballistic Rectification in an Asymmetric Mesoscopic Cross
Junction.” Applied Physics Letters, 082110, 2006, doi:10.1063/1.2179618.
short: M. Knop, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters
(2006).
date_created: 2019-03-27T07:54:36Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2179618
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Ballistic rectification in an asymmetric mesoscopic cross junction
type: journal_article
user_id: '42514'
year: '2006'
...
---
_id: '8654'
article_number: '121115'
author:
- first_name: R.
full_name: Schmidt, R.
last_name: Schmidt
- first_name: U.
full_name: Scholz, U.
last_name: Scholz
- first_name: M.
full_name: Vitzethum, M.
last_name: Vitzethum
- first_name: R.
full_name: Fix, R.
last_name: Fix
- first_name: C.
full_name: Metzner, C.
last_name: Metzner
- first_name: P.
full_name: Kailuweit, P.
last_name: Kailuweit
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A.
full_name: Wieck, A.
last_name: Wieck
- first_name: M. C.
full_name: Hübner, M. C.
last_name: Hübner
- first_name: S.
full_name: Stufler, S.
last_name: Stufler
- first_name: A.
full_name: Zrenner, A.
last_name: Zrenner
- first_name: S.
full_name: Malzer, S.
last_name: Malzer
- first_name: G. H.
full_name: Döhler, G. H.
last_name: Döhler
citation:
ama: Schmidt R, Scholz U, Vitzethum M, et al. Fabrication of genuine single-quantum-dot
light-emitting diodes. Applied Physics Letters. 2006. doi:10.1063/1.2188057
apa: Schmidt, R., Scholz, U., Vitzethum, M., Fix, R., Metzner, C., Kailuweit, P.,
… Döhler, G. H. (2006). Fabrication of genuine single-quantum-dot light-emitting
diodes. Applied Physics Letters. https://doi.org/10.1063/1.2188057
bibtex: '@article{Schmidt_Scholz_Vitzethum_Fix_Metzner_Kailuweit_Reuter_Wieck_Hübner_Stufler_et
al._2006, title={Fabrication of genuine single-quantum-dot light-emitting diodes},
DOI={10.1063/1.2188057}, number={121115},
journal={Applied Physics Letters}, author={Schmidt, R. and Scholz, U. and Vitzethum,
M. and Fix, R. and Metzner, C. and Kailuweit, P. and Reuter, Dirk and Wieck, A.
and Hübner, M. C. and Stufler, S. and et al.}, year={2006} }'
chicago: Schmidt, R., U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit,
Dirk Reuter, et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting
Diodes.” Applied Physics Letters, 2006. https://doi.org/10.1063/1.2188057.
ieee: R. Schmidt et al., “Fabrication of genuine single-quantum-dot light-emitting
diodes,” Applied Physics Letters, 2006.
mla: Schmidt, R., et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting
Diodes.” Applied Physics Letters, 121115, 2006, doi:10.1063/1.2188057.
short: R. Schmidt, U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, D.
Reuter, A. Wieck, M.C. Hübner, S. Stufler, A. Zrenner, S. Malzer, G.H. Döhler,
Applied Physics Letters (2006).
date_created: 2019-03-27T08:21:39Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2188057
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Fabrication of genuine single-quantum-dot light-emitting diodes
type: journal_article
user_id: '42514'
year: '2006'
...