--- _id: '6524' abstract: - lang: eng text: We use a picosecond acoustics technique to modulate the laser output of electrically pumped GaAs/AlAs micropillar lasers with InGaAs quantum dots. The modulation of the emission wavelength takes place on the frequencies of the nanomechanical extensional and breathing (radial) modes of the micropillars. The amplitude of the modulation for various nanomechanical modes is different for every micropillar which is explained by a various elastic contact between the micropillar walls and polymer environment. article_number: '041103' article_type: original author: - first_name: T. full_name: Czerniuk, T. last_name: Czerniuk - first_name: J. full_name: Tepper, J. last_name: Tepper - first_name: A. V. full_name: Akimov, A. V. last_name: Akimov - first_name: S. full_name: Unsleber, S. last_name: Unsleber - first_name: C. full_name: Schneider, C. last_name: Schneider - first_name: M. full_name: Kamp, M. last_name: Kamp - first_name: S. full_name: Höfling, S. last_name: Höfling - first_name: D. R. full_name: Yakovlev, D. R. last_name: Yakovlev - first_name: M. full_name: Bayer, M. last_name: Bayer citation: ama: Czerniuk T, Tepper J, Akimov AV, et al. Impact of nanomechanical resonances on lasing from electrically pumped quantum dot micropillars. Applied Physics Letters. 2015;106(4). doi:10.1063/1.4906611 apa: Czerniuk, T., Tepper, J., Akimov, A. V., Unsleber, S., Schneider, C., Kamp, M., … Bayer, M. (2015). Impact of nanomechanical resonances on lasing from electrically pumped quantum dot micropillars. Applied Physics Letters, 106(4). https://doi.org/10.1063/1.4906611 bibtex: '@article{Czerniuk_Tepper_Akimov_Unsleber_Schneider_Kamp_Höfling_Yakovlev_Bayer_2015, title={Impact of nanomechanical resonances on lasing from electrically pumped quantum dot micropillars}, volume={106}, DOI={10.1063/1.4906611}, number={4041103}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Czerniuk, T. and Tepper, J. and Akimov, A. V. and Unsleber, S. and Schneider, C. and Kamp, M. and Höfling, S. and Yakovlev, D. R. and Bayer, M.}, year={2015} }' chicago: Czerniuk, T., J. Tepper, A. V. Akimov, S. Unsleber, C. Schneider, M. Kamp, S. Höfling, D. R. Yakovlev, and M. Bayer. “Impact of Nanomechanical Resonances on Lasing from Electrically Pumped Quantum Dot Micropillars.” Applied Physics Letters 106, no. 4 (2015). https://doi.org/10.1063/1.4906611. ieee: T. Czerniuk et al., “Impact of nanomechanical resonances on lasing from electrically pumped quantum dot micropillars,” Applied Physics Letters, vol. 106, no. 4, 2015. mla: Czerniuk, T., et al. “Impact of Nanomechanical Resonances on Lasing from Electrically Pumped Quantum Dot Micropillars.” Applied Physics Letters, vol. 106, no. 4, 041103, AIP Publishing, 2015, doi:10.1063/1.4906611. short: T. Czerniuk, J. Tepper, A.V. Akimov, S. Unsleber, C. Schneider, M. Kamp, S. Höfling, D.R. Yakovlev, M. Bayer, Applied Physics Letters 106 (2015). date_created: 2019-01-09T09:07:33Z date_updated: 2022-01-06T07:03:10Z department: - _id: '230' doi: 10.1063/1.4906611 intvolume: ' 106' issue: '4' language: - iso: eng project: - _id: '53' name: TRR 142 - _id: '54' name: TRR 142 - Project Area A - _id: '63' name: TRR 142 - Subproject A6 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Impact of nanomechanical resonances on lasing from electrically pumped quantum dot micropillars type: journal_article user_id: '49428' volume: 106 year: '2015' ... --- _id: '39689' article_number: '201114' author: - first_name: Markus full_name: Wahle, Markus last_name: Wahle - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Wahle M, Kitzerow H-S. Electrically tunable zero dispersion wavelengths in photonic crystal fibers filled with a dual frequency addressable liquid crystal. Applied Physics Letters. 2015;107(20). doi:10.1063/1.4936086 apa: Wahle, M., & Kitzerow, H.-S. (2015). Electrically tunable zero dispersion wavelengths in photonic crystal fibers filled with a dual frequency addressable liquid crystal. Applied Physics Letters, 107(20), Article 201114. https://doi.org/10.1063/1.4936086 bibtex: '@article{Wahle_Kitzerow_2015, title={Electrically tunable zero dispersion wavelengths in photonic crystal fibers filled with a dual frequency addressable liquid crystal}, volume={107}, DOI={10.1063/1.4936086}, number={20201114}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wahle, Markus and Kitzerow, Heinz-Siegfried}, year={2015} }' chicago: Wahle, Markus, and Heinz-Siegfried Kitzerow. “Electrically Tunable Zero Dispersion Wavelengths in Photonic Crystal Fibers Filled with a Dual Frequency Addressable Liquid Crystal.” Applied Physics Letters 107, no. 20 (2015). https://doi.org/10.1063/1.4936086. ieee: 'M. Wahle and H.-S. Kitzerow, “Electrically tunable zero dispersion wavelengths in photonic crystal fibers filled with a dual frequency addressable liquid crystal,” Applied Physics Letters, vol. 107, no. 20, Art. no. 201114, 2015, doi: 10.1063/1.4936086.' mla: Wahle, Markus, and Heinz-Siegfried Kitzerow. “Electrically Tunable Zero Dispersion Wavelengths in Photonic Crystal Fibers Filled with a Dual Frequency Addressable Liquid Crystal.” Applied Physics Letters, vol. 107, no. 20, 201114, AIP Publishing, 2015, doi:10.1063/1.4936086. short: M. Wahle, H.-S. Kitzerow, Applied Physics Letters 107 (2015). date_created: 2023-01-24T18:11:41Z date_updated: 2023-01-24T18:12:09Z department: - _id: '313' - _id: '230' - _id: '638' doi: 10.1063/1.4936086 intvolume: ' 107' issue: '20' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Electrically tunable zero dispersion wavelengths in photonic crystal fibers filled with a dual frequency addressable liquid crystal type: journal_article user_id: '254' volume: 107 year: '2015' ... --- _id: '7224' article_number: '241101' author: - first_name: J. full_name: Repp, J. last_name: Repp - first_name: G. J. full_name: Schinner, G. J. last_name: Schinner - first_name: E. full_name: Schubert, E. last_name: Schubert - first_name: A. K. full_name: Rai, A. K. last_name: Rai - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: U. full_name: Wurstbauer, U. last_name: Wurstbauer - first_name: J. P. full_name: Kotthaus, J. P. last_name: Kotthaus - first_name: A. W. full_name: Holleitner, A. W. last_name: Holleitner citation: ama: Repp J, Schinner GJ, Schubert E, et al. Confocal shift interferometry of coherent emission from trapped dipolar excitons. Applied Physics Letters. 2014;105(24). doi:10.1063/1.4904222 apa: Repp, J., Schinner, G. J., Schubert, E., Rai, A. K., Reuter, D., Wieck, A. D., … Holleitner, A. W. (2014). Confocal shift interferometry of coherent emission from trapped dipolar excitons. Applied Physics Letters, 105(24). https://doi.org/10.1063/1.4904222 bibtex: '@article{Repp_Schinner_Schubert_Rai_Reuter_Wieck_Wurstbauer_Kotthaus_Holleitner_2014, title={Confocal shift interferometry of coherent emission from trapped dipolar excitons}, volume={105}, DOI={10.1063/1.4904222}, number={24241101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Repp, J. and Schinner, G. J. and Schubert, E. and Rai, A. K. and Reuter, Dirk and Wieck, A. D. and Wurstbauer, U. and Kotthaus, J. P. and Holleitner, A. W.}, year={2014} }' chicago: Repp, J., G. J. Schinner, E. Schubert, A. K. Rai, Dirk Reuter, A. D. Wieck, U. Wurstbauer, J. P. Kotthaus, and A. W. Holleitner. “Confocal Shift Interferometry of Coherent Emission from Trapped Dipolar Excitons.” Applied Physics Letters 105, no. 24 (2014). https://doi.org/10.1063/1.4904222. ieee: J. Repp et al., “Confocal shift interferometry of coherent emission from trapped dipolar excitons,” Applied Physics Letters, vol. 105, no. 24, 2014. mla: Repp, J., et al. “Confocal Shift Interferometry of Coherent Emission from Trapped Dipolar Excitons.” Applied Physics Letters, vol. 105, no. 24, 241101, AIP Publishing, 2014, doi:10.1063/1.4904222. short: J. Repp, G.J. Schinner, E. Schubert, A.K. Rai, D. Reuter, A.D. Wieck, U. Wurstbauer, J.P. Kotthaus, A.W. Holleitner, Applied Physics Letters 105 (2014). date_created: 2019-01-29T12:19:14Z date_updated: 2022-01-06T07:03:29Z department: - _id: '15' - _id: '230' doi: 10.1063/1.4904222 intvolume: ' 105' issue: '24' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Confocal shift interferometry of coherent emission from trapped dipolar excitons type: journal_article user_id: '42514' volume: 105 year: '2014' ... --- _id: '7259' article_number: '092401' author: - first_name: J. H. full_name: Buß, J. H. last_name: Buß - first_name: J. full_name: Rudolph, J. last_name: Rudolph - first_name: S. full_name: Shvarkov, S. last_name: Shvarkov - first_name: F. full_name: Semond, F. last_name: Semond - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: D. full_name: Hägele, D. last_name: Hägele citation: ama: 'Buß JH, Rudolph J, Shvarkov S, et al. Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons. Applied Physics Letters. 2013;103(9). doi:10.1063/1.4819767' apa: 'Buß, J. H., Rudolph, J., Shvarkov, S., Semond, F., Reuter, D., Wieck, A. D., & Hägele, D. (2013). Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons. Applied Physics Letters, 103(9). https://doi.org/10.1063/1.4819767' bibtex: '@article{Buß_Rudolph_Shvarkov_Semond_Reuter_Wieck_Hägele_2013, title={Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons}, volume={103}, DOI={10.1063/1.4819767}, number={9092401}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Buß, J. H. and Rudolph, J. and Shvarkov, S. and Semond, F. and Reuter, Dirk and Wieck, A. D. and Hägele, D.}, year={2013} }' chicago: 'Buß, J. H., J. Rudolph, S. Shvarkov, F. Semond, Dirk Reuter, A. D. Wieck, and D. Hägele. “Magneto-Optical Studies of Gd-Implanted GaN: No Spin Alignment of Conduction Band Electrons.” Applied Physics Letters 103, no. 9 (2013). https://doi.org/10.1063/1.4819767.' ieee: 'J. H. Buß et al., “Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons,” Applied Physics Letters, vol. 103, no. 9, 2013.' mla: 'Buß, J. H., et al. “Magneto-Optical Studies of Gd-Implanted GaN: No Spin Alignment of Conduction Band Electrons.” Applied Physics Letters, vol. 103, no. 9, 092401, AIP Publishing, 2013, doi:10.1063/1.4819767.' short: J.H. Buß, J. Rudolph, S. Shvarkov, F. Semond, D. Reuter, A.D. Wieck, D. Hägele, Applied Physics Letters 103 (2013). date_created: 2019-01-30T12:56:20Z date_updated: 2022-01-06T07:03:30Z department: - _id: '15' - _id: '230' doi: 10.1063/1.4819767 intvolume: ' 103' issue: '9' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: 'Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons' type: journal_article user_id: '42514' volume: 103 year: '2013' ... --- _id: '3963' abstract: - lang: eng text: "Whispering gallery modes (WGMs) were observed in 60 nm thin cubic AlN microdisk resonators containing a single layer of non-polar cubic GaN quantum dots. Freestanding microdisks were patterned by means of electron beam lithography and a two step reactive ion etching process. Micro-photoluminescence spectroscopy investigations were performed for optical characterization. We analyzed the mode spacing for disk diameters ranging from 2-4 lm. Numerical investigations using three dimensional finite difference time domain calculations were in good agreement\r\nwith the experimental data. Whispering gallery modes of the radial orders 1 and 2 were identified by means of simulated mode field distributions." article_type: original author: - first_name: M. full_name: Bürger, M. last_name: Bürger - first_name: M. full_name: Ruth, M. last_name: Ruth - first_name: S. full_name: Declair, S. last_name: Declair - first_name: Jens full_name: Förstner, Jens id: '158' last_name: Förstner orcid: 0000-0001-7059-9862 - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 citation: ama: Bürger M, Ruth M, Declair S, Förstner J, Meier C, As DJ. Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots. Applied Physics Letters. 2013;102(8):081105. doi:10.1063/1.4793653 apa: Bürger, M., Ruth, M., Declair, S., Förstner, J., Meier, C., & As, D. J. (2013). Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots. Applied Physics Letters, 102(8), 081105. https://doi.org/10.1063/1.4793653 bibtex: '@article{Bürger_Ruth_Declair_Förstner_Meier_As_2013, title={Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots}, volume={102}, DOI={10.1063/1.4793653}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Bürger, M. and Ruth, M. and Declair, S. and Förstner, Jens and Meier, Cedrik and As, Donat Josef}, year={2013}, pages={081105} }' chicago: 'Bürger, M., M. Ruth, S. Declair, Jens Förstner, Cedrik Meier, and Donat Josef As. “Whispering Gallery Modes in Zinc-Blende AlN Microdisks Containing Non-Polar GaN Quantum Dots.” Applied Physics Letters 102, no. 8 (2013): 081105. https://doi.org/10.1063/1.4793653.' ieee: M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, and D. J. As, “Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots,” Applied Physics Letters, vol. 102, no. 8, p. 081105, 2013. mla: Bürger, M., et al. “Whispering Gallery Modes in Zinc-Blende AlN Microdisks Containing Non-Polar GaN Quantum Dots.” Applied Physics Letters, vol. 102, no. 8, AIP Publishing, 2013, p. 081105, doi:10.1063/1.4793653. short: M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, D.J. As, Applied Physics Letters 102 (2013) 081105. date_created: 2018-08-21T07:43:22Z date_updated: 2022-01-06T07:00:01Z ddc: - '530' department: - _id: '15' - _id: '287' - _id: '284' - _id: '230' - _id: '35' doi: 10.1063/1.4793653 file: - access_level: open_access content_type: application/pdf creator: hclaudia date_created: 2018-08-21T07:47:02Z date_updated: 2018-09-04T20:08:52Z file_id: '3964' file_name: 2013-02 Bürger,Ruth,Declair,Förstner,Meier,As_Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots.pdf file_size: 935911 relation: main_file file_date_updated: 2018-09-04T20:08:52Z has_accepted_license: '1' intvolume: ' 102' issue: '8' keyword: - tet_topic_qd - tet_topic_microdisk language: - iso: eng oa: '1' page: '081105' publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots type: journal_article urn: '39635' user_id: '14' volume: 102 year: '2013' ... --- _id: '39719' article_number: '043303' author: - first_name: Joachim full_name: Vollbrecht, Joachim last_name: Vollbrecht - first_name: Olga full_name: Kasdorf, Olga last_name: Kasdorf - first_name: Viktor full_name: Quiring, Viktor last_name: Quiring - first_name: Hubertus full_name: Suche, Hubertus last_name: Suche - first_name: Harald full_name: Bock, Harald last_name: Bock - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Vollbrecht J, Kasdorf O, Quiring V, Suche H, Bock H, Kitzerow H-S. Microresonator-enhanced electroluminescence of an organic light emitting diode based on a columnar liquid crystal. Applied Physics Letters. 2013;103(4). doi:10.1063/1.4816425 apa: Vollbrecht, J., Kasdorf, O., Quiring, V., Suche, H., Bock, H., & Kitzerow, H.-S. (2013). Microresonator-enhanced electroluminescence of an organic light emitting diode based on a columnar liquid crystal. Applied Physics Letters, 103(4), Article 043303. https://doi.org/10.1063/1.4816425 bibtex: '@article{Vollbrecht_Kasdorf_Quiring_Suche_Bock_Kitzerow_2013, title={Microresonator-enhanced electroluminescence of an organic light emitting diode based on a columnar liquid crystal}, volume={103}, DOI={10.1063/1.4816425}, number={4043303}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Vollbrecht, Joachim and Kasdorf, Olga and Quiring, Viktor and Suche, Hubertus and Bock, Harald and Kitzerow, Heinz-Siegfried}, year={2013} }' chicago: Vollbrecht, Joachim, Olga Kasdorf, Viktor Quiring, Hubertus Suche, Harald Bock, and Heinz-Siegfried Kitzerow. “Microresonator-Enhanced Electroluminescence of an Organic Light Emitting Diode Based on a Columnar Liquid Crystal.” Applied Physics Letters 103, no. 4 (2013). https://doi.org/10.1063/1.4816425. ieee: 'J. Vollbrecht, O. Kasdorf, V. Quiring, H. Suche, H. Bock, and H.-S. Kitzerow, “Microresonator-enhanced electroluminescence of an organic light emitting diode based on a columnar liquid crystal,” Applied Physics Letters, vol. 103, no. 4, Art. no. 043303, 2013, doi: 10.1063/1.4816425.' mla: Vollbrecht, Joachim, et al. “Microresonator-Enhanced Electroluminescence of an Organic Light Emitting Diode Based on a Columnar Liquid Crystal.” Applied Physics Letters, vol. 103, no. 4, 043303, AIP Publishing, 2013, doi:10.1063/1.4816425. short: J. Vollbrecht, O. Kasdorf, V. Quiring, H. Suche, H. Bock, H.-S. Kitzerow, Applied Physics Letters 103 (2013). date_created: 2023-01-24T18:33:09Z date_updated: 2023-01-24T18:33:39Z department: - _id: '313' - _id: '230' - _id: '638' doi: 10.1063/1.4816425 intvolume: ' 103' issue: '4' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Microresonator-enhanced electroluminescence of an organic light emitting diode based on a columnar liquid crystal type: journal_article user_id: '254' volume: 103 year: '2013' ... --- _id: '26066' article_number: '211119' author: - first_name: Ming-Fei full_name: Li, Ming-Fei last_name: Li - first_name: Yu-Ran full_name: Zhang, Yu-Ran last_name: Zhang - first_name: Xue-Feng full_name: Liu, Xue-Feng last_name: Liu - first_name: Xu-Ri full_name: Yao, Xu-Ri last_name: Yao - first_name: Kai Hong full_name: Luo, Kai Hong id: '36389' last_name: Luo orcid: 0000-0003-1008-4976 - first_name: Heng full_name: Fan, Heng last_name: Fan - first_name: Ling-An full_name: Wu, Ling-An last_name: Wu citation: ama: Li M-F, Zhang Y-R, Liu X-F, et al. A double-threshold technique for fast time-correspondence imaging. Applied Physics Letters. Published online 2013. doi:10.1063/1.4832328 apa: Li, M.-F., Zhang, Y.-R., Liu, X.-F., Yao, X.-R., Luo, K. H., Fan, H., & Wu, L.-A. (2013). A double-threshold technique for fast time-correspondence imaging. Applied Physics Letters, Article 211119. https://doi.org/10.1063/1.4832328 bibtex: '@article{Li_Zhang_Liu_Yao_Luo_Fan_Wu_2013, title={A double-threshold technique for fast time-correspondence imaging}, DOI={10.1063/1.4832328}, number={211119}, journal={Applied Physics Letters}, author={Li, Ming-Fei and Zhang, Yu-Ran and Liu, Xue-Feng and Yao, Xu-Ri and Luo, Kai Hong and Fan, Heng and Wu, Ling-An}, year={2013} }' chicago: Li, Ming-Fei, Yu-Ran Zhang, Xue-Feng Liu, Xu-Ri Yao, Kai Hong Luo, Heng Fan, and Ling-An Wu. “A Double-Threshold Technique for Fast Time-Correspondence Imaging.” Applied Physics Letters, 2013. https://doi.org/10.1063/1.4832328. ieee: 'M.-F. Li et al., “A double-threshold technique for fast time-correspondence imaging,” Applied Physics Letters, Art. no. 211119, 2013, doi: 10.1063/1.4832328.' mla: Li, Ming-Fei, et al. “A Double-Threshold Technique for Fast Time-Correspondence Imaging.” Applied Physics Letters, 211119, 2013, doi:10.1063/1.4832328. short: M.-F. Li, Y.-R. Zhang, X.-F. Liu, X.-R. Yao, K.H. Luo, H. Fan, L.-A. Wu, Applied Physics Letters (2013). date_created: 2021-10-12T08:38:51Z date_updated: 2023-01-26T10:09:42Z doi: 10.1063/1.4832328 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: A double-threshold technique for fast time-correspondence imaging type: journal_article user_id: '36389' year: '2013' ... --- _id: '7301' article_number: '112402' author: - first_name: Henning full_name: Höpfner, Henning last_name: Höpfner - first_name: Carola full_name: Fritsche, Carola last_name: Fritsche - first_name: Arne full_name: Ludwig, Arne last_name: Ludwig - first_name: Astrid full_name: Ludwig, Astrid last_name: Ludwig - first_name: Frank full_name: Stromberg, Frank last_name: Stromberg - first_name: Heiko full_name: Wende, Heiko last_name: Wende - first_name: Werner full_name: Keune, Werner last_name: Keune - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck - first_name: Nils C. full_name: Gerhardt, Nils C. last_name: Gerhardt - first_name: Martin R. full_name: Hofmann, Martin R. last_name: Hofmann citation: ama: Höpfner H, Fritsche C, Ludwig A, et al. Magnetic field dependence of the spin relaxation length in spin light-emitting diodes. Applied Physics Letters. 2012;101(11). doi:10.1063/1.4752162 apa: Höpfner, H., Fritsche, C., Ludwig, A., Ludwig, A., Stromberg, F., Wende, H., … Hofmann, M. R. (2012). Magnetic field dependence of the spin relaxation length in spin light-emitting diodes. Applied Physics Letters, 101(11). https://doi.org/10.1063/1.4752162 bibtex: '@article{Höpfner_Fritsche_Ludwig_Ludwig_Stromberg_Wende_Keune_Reuter_Wieck_Gerhardt_et al._2012, title={Magnetic field dependence of the spin relaxation length in spin light-emitting diodes}, volume={101}, DOI={10.1063/1.4752162}, number={11112402}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Höpfner, Henning and Fritsche, Carola and Ludwig, Arne and Ludwig, Astrid and Stromberg, Frank and Wende, Heiko and Keune, Werner and Reuter, Dirk and Wieck, Andreas D. and Gerhardt, Nils C. and et al.}, year={2012} }' chicago: Höpfner, Henning, Carola Fritsche, Arne Ludwig, Astrid Ludwig, Frank Stromberg, Heiko Wende, Werner Keune, et al. “Magnetic Field Dependence of the Spin Relaxation Length in Spin Light-Emitting Diodes.” Applied Physics Letters 101, no. 11 (2012). https://doi.org/10.1063/1.4752162. ieee: H. Höpfner et al., “Magnetic field dependence of the spin relaxation length in spin light-emitting diodes,” Applied Physics Letters, vol. 101, no. 11, 2012. mla: Höpfner, Henning, et al. “Magnetic Field Dependence of the Spin Relaxation Length in Spin Light-Emitting Diodes.” Applied Physics Letters, vol. 101, no. 11, 112402, AIP Publishing, 2012, doi:10.1063/1.4752162. short: H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W. Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, Applied Physics Letters 101 (2012). date_created: 2019-01-31T09:05:22Z date_updated: 2022-01-06T07:03:33Z department: - _id: '15' - _id: '230' doi: 10.1063/1.4752162 intvolume: ' 101' issue: '11' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Magnetic field dependence of the spin relaxation length in spin light-emitting diodes type: journal_article user_id: '42514' volume: 101 year: '2012' ... --- _id: '7312' article_number: '232110' author: - first_name: Andreas full_name: Beckel, Andreas last_name: Beckel - first_name: Daming full_name: Zhou, Daming last_name: Zhou - first_name: Bastian full_name: Marquardt, Bastian last_name: Marquardt - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck - first_name: Martin full_name: Geller, Martin last_name: Geller - first_name: Axel full_name: Lorke, Axel last_name: Lorke citation: ama: Beckel A, Zhou D, Marquardt B, et al. Momentum matching in the tunneling between 2-dimensional and 0-dimensional electron systems. Applied Physics Letters. 2012;100(23). doi:10.1063/1.4728114 apa: Beckel, A., Zhou, D., Marquardt, B., Reuter, D., Wieck, A. D., Geller, M., & Lorke, A. (2012). Momentum matching in the tunneling between 2-dimensional and 0-dimensional electron systems. Applied Physics Letters, 100(23). https://doi.org/10.1063/1.4728114 bibtex: '@article{Beckel_Zhou_Marquardt_Reuter_Wieck_Geller_Lorke_2012, title={Momentum matching in the tunneling between 2-dimensional and 0-dimensional electron systems}, volume={100}, DOI={10.1063/1.4728114}, number={23232110}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Beckel, Andreas and Zhou, Daming and Marquardt, Bastian and Reuter, Dirk and Wieck, Andreas D. and Geller, Martin and Lorke, Axel}, year={2012} }' chicago: Beckel, Andreas, Daming Zhou, Bastian Marquardt, Dirk Reuter, Andreas D. Wieck, Martin Geller, and Axel Lorke. “Momentum Matching in the Tunneling between 2-Dimensional and 0-Dimensional Electron Systems.” Applied Physics Letters 100, no. 23 (2012). https://doi.org/10.1063/1.4728114. ieee: A. Beckel et al., “Momentum matching in the tunneling between 2-dimensional and 0-dimensional electron systems,” Applied Physics Letters, vol. 100, no. 23, 2012. mla: Beckel, Andreas, et al. “Momentum Matching in the Tunneling between 2-Dimensional and 0-Dimensional Electron Systems.” Applied Physics Letters, vol. 100, no. 23, 232110, AIP Publishing, 2012, doi:10.1063/1.4728114. short: A. Beckel, D. Zhou, B. Marquardt, D. Reuter, A.D. Wieck, M. Geller, A. Lorke, Applied Physics Letters 100 (2012). date_created: 2019-01-31T10:22:42Z date_updated: 2022-01-06T07:03:34Z department: - _id: '15' - _id: '230' doi: 10.1063/1.4728114 intvolume: ' 100' issue: '23' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Momentum matching in the tunneling between 2-dimensional and 0-dimensional electron systems type: journal_article user_id: '42514' volume: 100 year: '2012' ... --- _id: '7313' article_number: '232107' author: - first_name: A. full_name: Schwan, A. last_name: Schwan - first_name: S. full_name: Varwig, S. last_name: Varwig - first_name: A. full_name: Greilich, A. last_name: Greilich - first_name: D. R. full_name: Yakovlev, D. R. last_name: Yakovlev - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: M. full_name: Bayer, M. last_name: Bayer citation: ama: Schwan A, Varwig S, Greilich A, et al. Non-resonant optical excitation of mode-locked electron spin coherence in (In,Ga)As/GaAs quantum dot ensemble. Applied Physics Letters. 2012;100(23). doi:10.1063/1.4726264 apa: Schwan, A., Varwig, S., Greilich, A., Yakovlev, D. R., Reuter, D., Wieck, A. D., & Bayer, M. (2012). Non-resonant optical excitation of mode-locked electron spin coherence in (In,Ga)As/GaAs quantum dot ensemble. Applied Physics Letters, 100(23). https://doi.org/10.1063/1.4726264 bibtex: '@article{Schwan_Varwig_Greilich_Yakovlev_Reuter_Wieck_Bayer_2012, title={Non-resonant optical excitation of mode-locked electron spin coherence in (In,Ga)As/GaAs quantum dot ensemble}, volume={100}, DOI={10.1063/1.4726264}, number={23232107}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Schwan, A. and Varwig, S. and Greilich, A. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}, year={2012} }' chicago: Schwan, A., S. Varwig, A. Greilich, D. R. Yakovlev, Dirk Reuter, A. D. Wieck, and M. Bayer. “Non-Resonant Optical Excitation of Mode-Locked Electron Spin Coherence in (In,Ga)As/GaAs Quantum Dot Ensemble.” Applied Physics Letters 100, no. 23 (2012). https://doi.org/10.1063/1.4726264. ieee: A. Schwan et al., “Non-resonant optical excitation of mode-locked electron spin coherence in (In,Ga)As/GaAs quantum dot ensemble,” Applied Physics Letters, vol. 100, no. 23, 2012. mla: Schwan, A., et al. “Non-Resonant Optical Excitation of Mode-Locked Electron Spin Coherence in (In,Ga)As/GaAs Quantum Dot Ensemble.” Applied Physics Letters, vol. 100, no. 23, 232107, AIP Publishing, 2012, doi:10.1063/1.4726264. short: A. Schwan, S. Varwig, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Applied Physics Letters 100 (2012). date_created: 2019-01-31T10:23:29Z date_updated: 2022-01-06T07:03:34Z department: - _id: '15' - _id: '230' doi: 10.1063/1.4726264 intvolume: ' 100' issue: '23' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Non-resonant optical excitation of mode-locked electron spin coherence in (In,Ga)As/GaAs quantum dot ensemble type: journal_article user_id: '42514' volume: 100 year: '2012' ... --- _id: '7327' article_number: '132103' author: - first_name: J. full_name: Huang, J. last_name: Huang - first_name: Y. S. full_name: Chen, Y. S. last_name: Chen - first_name: A. full_name: Ludwig, A. last_name: Ludwig - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: G. full_name: Bacher, G. last_name: Bacher citation: ama: Huang J, Chen YS, Ludwig A, Reuter D, Wieck AD, Bacher G. Electron-nuclei spin coupling in GaAs—Free versus localized electrons. Applied Physics Letters. 2012;100(13). doi:10.1063/1.3699261 apa: Huang, J., Chen, Y. S., Ludwig, A., Reuter, D., Wieck, A. D., & Bacher, G. (2012). Electron-nuclei spin coupling in GaAs—Free versus localized electrons. Applied Physics Letters, 100(13). https://doi.org/10.1063/1.3699261 bibtex: '@article{Huang_Chen_Ludwig_Reuter_Wieck_Bacher_2012, title={Electron-nuclei spin coupling in GaAs—Free versus localized electrons}, volume={100}, DOI={10.1063/1.3699261}, number={13132103}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Huang, J. and Chen, Y. S. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Bacher, G.}, year={2012} }' chicago: Huang, J., Y. S. Chen, A. Ludwig, Dirk Reuter, A. D. Wieck, and G. Bacher. “Electron-Nuclei Spin Coupling in GaAs—Free versus Localized Electrons.” Applied Physics Letters 100, no. 13 (2012). https://doi.org/10.1063/1.3699261. ieee: J. Huang, Y. S. Chen, A. Ludwig, D. Reuter, A. D. Wieck, and G. Bacher, “Electron-nuclei spin coupling in GaAs—Free versus localized electrons,” Applied Physics Letters, vol. 100, no. 13, 2012. mla: Huang, J., et al. “Electron-Nuclei Spin Coupling in GaAs—Free versus Localized Electrons.” Applied Physics Letters, vol. 100, no. 13, 132103, AIP Publishing, 2012, doi:10.1063/1.3699261. short: J. Huang, Y.S. Chen, A. Ludwig, D. Reuter, A.D. Wieck, G. Bacher, Applied Physics Letters 100 (2012). date_created: 2019-01-31T11:11:08Z date_updated: 2022-01-06T07:03:35Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3699261 intvolume: ' 100' issue: '13' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Electron-nuclei spin coupling in GaAs—Free versus localized electrons type: journal_article user_id: '42514' volume: 100 year: '2012' ... --- _id: '7330' article_number: '052101' author: - first_name: J. C. H. full_name: Chen, J. C. H. last_name: Chen - first_name: D. Q. full_name: Wang, D. Q. last_name: Wang - first_name: O. full_name: Klochan, O. last_name: Klochan - first_name: A. P. full_name: Micolich, A. P. last_name: Micolich - first_name: K. full_name: Das Gupta, K. last_name: Das Gupta - first_name: F. full_name: Sfigakis, F. last_name: Sfigakis - first_name: D. A. full_name: Ritchie, D. A. last_name: Ritchie - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: A. R. full_name: Hamilton, A. R. last_name: Hamilton citation: ama: Chen JCH, Wang DQ, Klochan O, et al. Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure. Applied Physics Letters. 2012;100(5). doi:10.1063/1.3673837 apa: Chen, J. C. H., Wang, D. Q., Klochan, O., Micolich, A. P., Das Gupta, K., Sfigakis, F., … Hamilton, A. R. (2012). Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure. Applied Physics Letters, 100(5). https://doi.org/10.1063/1.3673837 bibtex: '@article{Chen_Wang_Klochan_Micolich_Das Gupta_Sfigakis_Ritchie_Reuter_Wieck_Hamilton_2012, title={Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure}, volume={100}, DOI={10.1063/1.3673837}, number={5052101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chen, J. C. H. and Wang, D. Q. and Klochan, O. and Micolich, A. P. and Das Gupta, K. and Sfigakis, F. and Ritchie, D. A. and Reuter, Dirk and Wieck, A. D. and Hamilton, A. R.}, year={2012} }' chicago: Chen, J. C. H., D. Q. Wang, O. Klochan, A. P. Micolich, K. Das Gupta, F. Sfigakis, D. A. Ritchie, Dirk Reuter, A. D. Wieck, and A. R. Hamilton. “Fabrication and Characterization of Ambipolar Devices on an Undoped AlGaAs/GaAs Heterostructure.” Applied Physics Letters 100, no. 5 (2012). https://doi.org/10.1063/1.3673837. ieee: J. C. H. Chen et al., “Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure,” Applied Physics Letters, vol. 100, no. 5, 2012. mla: Chen, J. C. H., et al. “Fabrication and Characterization of Ambipolar Devices on an Undoped AlGaAs/GaAs Heterostructure.” Applied Physics Letters, vol. 100, no. 5, 052101, AIP Publishing, 2012, doi:10.1063/1.3673837. short: J.C.H. Chen, D.Q. Wang, O. Klochan, A.P. Micolich, K. Das Gupta, F. Sfigakis, D.A. Ritchie, D. Reuter, A.D. Wieck, A.R. Hamilton, Applied Physics Letters 100 (2012). date_created: 2019-01-31T11:14:10Z date_updated: 2022-01-06T07:03:35Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3673837 intvolume: ' 100' issue: '5' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure type: journal_article user_id: '42514' volume: 100 year: '2012' ... --- _id: '7491' article_number: '263114' author: - first_name: Philipp full_name: Kröger, Philipp last_name: Kröger - first_name: Marcel full_name: Ruth, Marcel last_name: Ruth - first_name: Nils full_name: Weber, Nils last_name: Weber - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 citation: ama: Kröger P, Ruth M, Weber N, Meier C. Carrier localization in ZnO quantum wires. Applied Physics Letters. 2012;100(26). doi:10.1063/1.4731767 apa: Kröger, P., Ruth, M., Weber, N., & Meier, C. (2012). Carrier localization in ZnO quantum wires. Applied Physics Letters, 100(26). https://doi.org/10.1063/1.4731767 bibtex: '@article{Kröger_Ruth_Weber_Meier_2012, title={Carrier localization in ZnO quantum wires}, volume={100}, DOI={10.1063/1.4731767}, number={26263114}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kröger, Philipp and Ruth, Marcel and Weber, Nils and Meier, Cedrik}, year={2012} }' chicago: Kröger, Philipp, Marcel Ruth, Nils Weber, and Cedrik Meier. “Carrier Localization in ZnO Quantum Wires.” Applied Physics Letters 100, no. 26 (2012). https://doi.org/10.1063/1.4731767. ieee: P. Kröger, M. Ruth, N. Weber, and C. Meier, “Carrier localization in ZnO quantum wires,” Applied Physics Letters, vol. 100, no. 26, 2012. mla: Kröger, Philipp, et al. “Carrier Localization in ZnO Quantum Wires.” Applied Physics Letters, vol. 100, no. 26, 263114, AIP Publishing, 2012, doi:10.1063/1.4731767. short: P. Kröger, M. Ruth, N. Weber, C. Meier, Applied Physics Letters 100 (2012). date_created: 2019-02-04T14:30:23Z date_updated: 2022-01-06T07:03:39Z department: - _id: '15' - _id: '230' - _id: '35' - _id: '287' doi: 10.1063/1.4731767 intvolume: ' 100' issue: '26' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Carrier localization in ZnO quantum wires type: journal_article user_id: '20798' volume: 100 year: '2012' ... --- _id: '22599' article_number: '114101' author: - first_name: A. P. full_name: Ehiasarian, A. P. last_name: Ehiasarian - first_name: A. full_name: Hecimovic, A. last_name: Hecimovic - first_name: Maria Teresa full_name: de los Arcos de Pedro, Maria Teresa id: '54556' last_name: de los Arcos de Pedro - first_name: R. full_name: New, R. last_name: New - first_name: V. full_name: Schulz-von der Gathen, V. last_name: Schulz-von der Gathen - first_name: M. full_name: Böke, M. last_name: Böke - first_name: J. full_name: Winter, J. last_name: Winter citation: ama: 'Ehiasarian AP, Hecimovic A, de los Arcos de Pedro MT, et al. High power impulse magnetron sputtering discharges: Instabilities and plasma self-organization. Applied Physics Letters. Published online 2012. doi:10.1063/1.3692172' apa: 'Ehiasarian, A. P., Hecimovic, A., de los Arcos de Pedro, M. T., New, R., Schulz-von der Gathen, V., Böke, M., & Winter, J. (2012). High power impulse magnetron sputtering discharges: Instabilities and plasma self-organization. Applied Physics Letters, Article 114101. https://doi.org/10.1063/1.3692172' bibtex: '@article{Ehiasarian_Hecimovic_de los Arcos de Pedro_New_Schulz-von der Gathen_Böke_Winter_2012, title={High power impulse magnetron sputtering discharges: Instabilities and plasma self-organization}, DOI={10.1063/1.3692172}, number={114101}, journal={Applied Physics Letters}, author={Ehiasarian, A. P. and Hecimovic, A. and de los Arcos de Pedro, Maria Teresa and New, R. and Schulz-von der Gathen, V. and Böke, M. and Winter, J.}, year={2012} }' chicago: 'Ehiasarian, A. P., A. Hecimovic, Maria Teresa de los Arcos de Pedro, R. New, V. Schulz-von der Gathen, M. Böke, and J. Winter. “High Power Impulse Magnetron Sputtering Discharges: Instabilities and Plasma Self-Organization.” Applied Physics Letters, 2012. https://doi.org/10.1063/1.3692172.' ieee: 'A. P. Ehiasarian et al., “High power impulse magnetron sputtering discharges: Instabilities and plasma self-organization,” Applied Physics Letters, Art. no. 114101, 2012, doi: 10.1063/1.3692172.' mla: 'Ehiasarian, A. P., et al. “High Power Impulse Magnetron Sputtering Discharges: Instabilities and Plasma Self-Organization.” Applied Physics Letters, 114101, 2012, doi:10.1063/1.3692172.' short: A.P. Ehiasarian, A. Hecimovic, M.T. de los Arcos de Pedro, R. New, V. Schulz-von der Gathen, M. Böke, J. Winter, Applied Physics Letters (2012). date_created: 2021-07-07T11:22:50Z date_updated: 2023-01-24T08:24:51Z department: - _id: '302' doi: 10.1063/1.3692172 extern: '1' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: 'High power impulse magnetron sputtering discharges: Instabilities and plasma self-organization' type: journal_article user_id: '54556' year: '2012' ... --- _id: '39729' article_number: '223301' author: - first_name: B. full_name: Atorf, B. last_name: Atorf - first_name: A. full_name: Hoischen, A. last_name: Hoischen - first_name: M. B. full_name: Ros, M. B. last_name: Ros - first_name: N. full_name: Gimeno, N. last_name: Gimeno - first_name: C. full_name: Tschierske, C. last_name: Tschierske - first_name: G. full_name: Dantlgraber, G. last_name: Dantlgraber - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Atorf B, Hoischen A, Ros MB, et al. Switching performance of a polymer-stabilized antiferroelectric liquid crystal based on bent-core molecules. Applied Physics Letters. 2012;100(22). doi:10.1063/1.4722794 apa: Atorf, B., Hoischen, A., Ros, M. B., Gimeno, N., Tschierske, C., Dantlgraber, G., & Kitzerow, H.-S. (2012). Switching performance of a polymer-stabilized antiferroelectric liquid crystal based on bent-core molecules. Applied Physics Letters, 100(22), Article 223301. https://doi.org/10.1063/1.4722794 bibtex: '@article{Atorf_Hoischen_Ros_Gimeno_Tschierske_Dantlgraber_Kitzerow_2012, title={Switching performance of a polymer-stabilized antiferroelectric liquid crystal based on bent-core molecules}, volume={100}, DOI={10.1063/1.4722794}, number={22223301}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Atorf, B. and Hoischen, A. and Ros, M. B. and Gimeno, N. and Tschierske, C. and Dantlgraber, G. and Kitzerow, Heinz-Siegfried}, year={2012} }' chicago: Atorf, B., A. Hoischen, M. B. Ros, N. Gimeno, C. Tschierske, G. Dantlgraber, and Heinz-Siegfried Kitzerow. “Switching Performance of a Polymer-Stabilized Antiferroelectric Liquid Crystal Based on Bent-Core Molecules.” Applied Physics Letters 100, no. 22 (2012). https://doi.org/10.1063/1.4722794. ieee: 'B. Atorf et al., “Switching performance of a polymer-stabilized antiferroelectric liquid crystal based on bent-core molecules,” Applied Physics Letters, vol. 100, no. 22, Art. no. 223301, 2012, doi: 10.1063/1.4722794.' mla: Atorf, B., et al. “Switching Performance of a Polymer-Stabilized Antiferroelectric Liquid Crystal Based on Bent-Core Molecules.” Applied Physics Letters, vol. 100, no. 22, 223301, AIP Publishing, 2012, doi:10.1063/1.4722794. short: B. Atorf, A. Hoischen, M.B. Ros, N. Gimeno, C. Tschierske, G. Dantlgraber, H.-S. Kitzerow, Applied Physics Letters 100 (2012). date_created: 2023-01-24T18:39:05Z date_updated: 2023-01-24T18:39:34Z department: - _id: '313' - _id: '230' - _id: '638' doi: 10.1063/1.4722794 intvolume: ' 100' issue: '22' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Switching performance of a polymer-stabilized antiferroelectric liquid crystal based on bent-core molecules type: journal_article user_id: '254' volume: 100 year: '2012' ... --- _id: '39728' article_number: '051117' author: - first_name: Jürgen full_name: Schmidtke, Jürgen last_name: Schmidtke - first_name: Gisela full_name: Jünnemann, Gisela last_name: Jünnemann - first_name: Susanne full_name: Keuker-Baumann, Susanne last_name: Keuker-Baumann - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Schmidtke J, Jünnemann G, Keuker-Baumann S, Kitzerow H-S. Electrical fine tuning of liquid crystal lasers. Applied Physics Letters. 2012;101(5). doi:10.1063/1.4739840 apa: Schmidtke, J., Jünnemann, G., Keuker-Baumann, S., & Kitzerow, H.-S. (2012). Electrical fine tuning of liquid crystal lasers. Applied Physics Letters, 101(5), Article 051117. https://doi.org/10.1063/1.4739840 bibtex: '@article{Schmidtke_Jünnemann_Keuker-Baumann_Kitzerow_2012, title={Electrical fine tuning of liquid crystal lasers}, volume={101}, DOI={10.1063/1.4739840}, number={5051117}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Schmidtke, Jürgen and Jünnemann, Gisela and Keuker-Baumann, Susanne and Kitzerow, Heinz-Siegfried}, year={2012} }' chicago: Schmidtke, Jürgen, Gisela Jünnemann, Susanne Keuker-Baumann, and Heinz-Siegfried Kitzerow. “Electrical Fine Tuning of Liquid Crystal Lasers.” Applied Physics Letters 101, no. 5 (2012). https://doi.org/10.1063/1.4739840. ieee: 'J. Schmidtke, G. Jünnemann, S. Keuker-Baumann, and H.-S. Kitzerow, “Electrical fine tuning of liquid crystal lasers,” Applied Physics Letters, vol. 101, no. 5, Art. no. 051117, 2012, doi: 10.1063/1.4739840.' mla: Schmidtke, Jürgen, et al. “Electrical Fine Tuning of Liquid Crystal Lasers.” Applied Physics Letters, vol. 101, no. 5, 051117, AIP Publishing, 2012, doi:10.1063/1.4739840. short: J. Schmidtke, G. Jünnemann, S. Keuker-Baumann, H.-S. Kitzerow, Applied Physics Letters 101 (2012). date_created: 2023-01-24T18:38:22Z date_updated: 2023-01-24T18:38:50Z department: - _id: '313' - _id: '230' - _id: '638' doi: 10.1063/1.4739840 intvolume: ' 101' issue: '5' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Electrical fine tuning of liquid crystal lasers type: journal_article user_id: '254' volume: 101 year: '2012' ... --- _id: '7697' article_number: '223510' author: - first_name: B. full_name: Marquardt, B. last_name: Marquardt - first_name: A. full_name: Beckel, A. last_name: Beckel - first_name: A. full_name: Lorke, A. last_name: Lorke - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: M. full_name: Geller, M. last_name: Geller citation: ama: 'Marquardt B, Beckel A, Lorke A, Wieck AD, Reuter D, Geller M. The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration. Applied Physics Letters. 2011;99(22). doi:10.1063/1.3665070' apa: 'Marquardt, B., Beckel, A., Lorke, A., Wieck, A. D., Reuter, D., & Geller, M. (2011). The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration. Applied Physics Letters, 99(22). https://doi.org/10.1063/1.3665070' bibtex: '@article{Marquardt_Beckel_Lorke_Wieck_Reuter_Geller_2011, title={The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration}, volume={99}, DOI={10.1063/1.3665070}, number={22223510}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Marquardt, B. and Beckel, A. and Lorke, A. and Wieck, A. D. and Reuter, Dirk and Geller, M.}, year={2011} }' chicago: 'Marquardt, B., A. Beckel, A. Lorke, A. D. Wieck, Dirk Reuter, and M. Geller. “The Influence of Charged InAs Quantum Dots on the Conductance of a Two-Dimensional Electron Gas: Mobility vs. Carrier Concentration.” Applied Physics Letters 99, no. 22 (2011). https://doi.org/10.1063/1.3665070.' ieee: 'B. Marquardt, A. Beckel, A. Lorke, A. D. Wieck, D. Reuter, and M. Geller, “The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration,” Applied Physics Letters, vol. 99, no. 22, 2011.' mla: 'Marquardt, B., et al. “The Influence of Charged InAs Quantum Dots on the Conductance of a Two-Dimensional Electron Gas: Mobility vs. Carrier Concentration.” Applied Physics Letters, vol. 99, no. 22, 223510, AIP Publishing, 2011, doi:10.1063/1.3665070.' short: B. Marquardt, A. Beckel, A. Lorke, A.D. Wieck, D. Reuter, M. Geller, Applied Physics Letters 99 (2011). date_created: 2019-02-14T09:41:25Z date_updated: 2022-01-06T07:03:44Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3665070 intvolume: ' 99' issue: '22' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: 'The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration' type: journal_article user_id: '42514' volume: 99 year: '2011' ... --- _id: '7710' article_number: '102111' author: - first_name: Sven S. full_name: Buchholz, Sven S. last_name: Buchholz - first_name: Ulrich full_name: Kunze, Ulrich last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck - first_name: Saskia F. full_name: Fischer, Saskia F. last_name: Fischer citation: ama: Buchholz SS, Kunze U, Reuter D, Wieck AD, Fischer SF. Mode-filtered electron injection into a waveguide interferometer. Applied Physics Letters. 2011;98(10). doi:10.1063/1.3563714 apa: Buchholz, S. S., Kunze, U., Reuter, D., Wieck, A. D., & Fischer, S. F. (2011). Mode-filtered electron injection into a waveguide interferometer. Applied Physics Letters, 98(10). https://doi.org/10.1063/1.3563714 bibtex: '@article{Buchholz_Kunze_Reuter_Wieck_Fischer_2011, title={Mode-filtered electron injection into a waveguide interferometer}, volume={98}, DOI={10.1063/1.3563714}, number={10102111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Buchholz, Sven S. and Kunze, Ulrich and Reuter, Dirk and Wieck, Andreas D. and Fischer, Saskia F.}, year={2011} }' chicago: Buchholz, Sven S., Ulrich Kunze, Dirk Reuter, Andreas D. Wieck, and Saskia F. Fischer. “Mode-Filtered Electron Injection into a Waveguide Interferometer.” Applied Physics Letters 98, no. 10 (2011). https://doi.org/10.1063/1.3563714. ieee: S. S. Buchholz, U. Kunze, D. Reuter, A. D. Wieck, and S. F. Fischer, “Mode-filtered electron injection into a waveguide interferometer,” Applied Physics Letters, vol. 98, no. 10, 2011. mla: Buchholz, Sven S., et al. “Mode-Filtered Electron Injection into a Waveguide Interferometer.” Applied Physics Letters, vol. 98, no. 10, 102111, AIP Publishing, 2011, doi:10.1063/1.3563714. short: S.S. Buchholz, U. Kunze, D. Reuter, A.D. Wieck, S.F. Fischer, Applied Physics Letters 98 (2011). date_created: 2019-02-14T10:32:36Z date_updated: 2022-01-06T07:03:45Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3563714 intvolume: ' 98' issue: '10' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Mode-filtered electron injection into a waveguide interferometer type: journal_article user_id: '42514' volume: 98 year: '2011' ... --- _id: '7711' article_number: '081911' author: - first_name: Y. S. full_name: Chen, Y. S. last_name: Chen - first_name: J. full_name: Huang, J. last_name: Huang - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. full_name: Ludwig, A. last_name: Ludwig - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: G. full_name: Bacher, G. last_name: Bacher citation: ama: Chen YS, Huang J, Reuter D, Ludwig A, Wieck AD, Bacher G. Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil. Applied Physics Letters. 2011;98(8). doi:10.1063/1.3553503 apa: Chen, Y. S., Huang, J., Reuter, D., Ludwig, A., Wieck, A. D., & Bacher, G. (2011). Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil. Applied Physics Letters, 98(8). https://doi.org/10.1063/1.3553503 bibtex: '@article{Chen_Huang_Reuter_Ludwig_Wieck_Bacher_2011, title={Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil}, volume={98}, DOI={10.1063/1.3553503}, number={8081911}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chen, Y. S. and Huang, J. and Reuter, Dirk and Ludwig, A. and Wieck, A. D. and Bacher, G.}, year={2011} }' chicago: Chen, Y. S., J. Huang, Dirk Reuter, A. Ludwig, A. D. Wieck, and G. Bacher. “Optically Detected Nuclear Magnetic Resonance in N-GaAs Using an on-Chip Microcoil.” Applied Physics Letters 98, no. 8 (2011). https://doi.org/10.1063/1.3553503. ieee: Y. S. Chen, J. Huang, D. Reuter, A. Ludwig, A. D. Wieck, and G. Bacher, “Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil,” Applied Physics Letters, vol. 98, no. 8, 2011. mla: Chen, Y. S., et al. “Optically Detected Nuclear Magnetic Resonance in N-GaAs Using an on-Chip Microcoil.” Applied Physics Letters, vol. 98, no. 8, 081911, AIP Publishing, 2011, doi:10.1063/1.3553503. short: Y.S. Chen, J. Huang, D. Reuter, A. Ludwig, A.D. Wieck, G. Bacher, Applied Physics Letters 98 (2011). date_created: 2019-02-14T10:33:23Z date_updated: 2022-01-06T07:03:45Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3553503 intvolume: ' 98' issue: '8' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil type: journal_article user_id: '42514' volume: 98 year: '2011' ... --- _id: '7311' article_number: '051102' author: - first_name: Henning full_name: Soldat, Henning last_name: Soldat - first_name: Mingyuan full_name: Li, Mingyuan last_name: Li - first_name: Nils C. full_name: Gerhardt, Nils C. last_name: Gerhardt - first_name: Martin R. full_name: Hofmann, Martin R. last_name: Hofmann - first_name: Arne full_name: Ludwig, Arne last_name: Ludwig - first_name: Astrid full_name: Ebbing, Astrid last_name: Ebbing - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck - first_name: Frank full_name: Stromberg, Frank last_name: Stromberg - first_name: Werner full_name: Keune, Werner last_name: Keune - first_name: Heiko full_name: Wende, Heiko last_name: Wende citation: ama: Soldat H, Li M, Gerhardt NC, et al. Room temperature spin relaxation length in spin light-emitting diodes. Applied Physics Letters. 2011;99(5). doi:10.1063/1.3622662 apa: Soldat, H., Li, M., Gerhardt, N. C., Hofmann, M. R., Ludwig, A., Ebbing, A., … Wende, H. (2011). Room temperature spin relaxation length in spin light-emitting diodes. Applied Physics Letters, 99(5). https://doi.org/10.1063/1.3622662 bibtex: '@article{Soldat_Li_Gerhardt_Hofmann_Ludwig_Ebbing_Reuter_Wieck_Stromberg_Keune_et al._2011, title={Room temperature spin relaxation length in spin light-emitting diodes}, volume={99}, DOI={10.1063/1.3622662}, number={5051102}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Soldat, Henning and Li, Mingyuan and Gerhardt, Nils C. and Hofmann, Martin R. and Ludwig, Arne and Ebbing, Astrid and Reuter, Dirk and Wieck, Andreas D. and Stromberg, Frank and Keune, Werner and et al.}, year={2011} }' chicago: Soldat, Henning, Mingyuan Li, Nils C. Gerhardt, Martin R. Hofmann, Arne Ludwig, Astrid Ebbing, Dirk Reuter, et al. “Room Temperature Spin Relaxation Length in Spin Light-Emitting Diodes.” Applied Physics Letters 99, no. 5 (2011). https://doi.org/10.1063/1.3622662. ieee: H. Soldat et al., “Room temperature spin relaxation length in spin light-emitting diodes,” Applied Physics Letters, vol. 99, no. 5, 2011. mla: Soldat, Henning, et al. “Room Temperature Spin Relaxation Length in Spin Light-Emitting Diodes.” Applied Physics Letters, vol. 99, no. 5, 051102, AIP Publishing, 2011, doi:10.1063/1.3622662. short: H. Soldat, M. Li, N.C. Gerhardt, M.R. Hofmann, A. Ludwig, A. Ebbing, D. Reuter, A.D. Wieck, F. Stromberg, W. Keune, H. Wende, Applied Physics Letters 99 (2011). date_created: 2019-01-31T10:21:25Z date_updated: 2022-01-06T07:03:34Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3622662 intvolume: ' 99' issue: '5' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Room temperature spin relaxation length in spin light-emitting diodes type: journal_article user_id: '42514' volume: 99 year: '2011' ... --- _id: '39735' article_number: '241106' author: - first_name: Alexander full_name: Lorenz, Alexander last_name: Lorenz - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Lorenz A, Kitzerow H-S. Efficient electro-optic switching in a photonic liquid crystal fiber. Applied Physics Letters. 2011;98(24). doi:10.1063/1.3599848 apa: Lorenz, A., & Kitzerow, H.-S. (2011). Efficient electro-optic switching in a photonic liquid crystal fiber. Applied Physics Letters, 98(24), Article 241106. https://doi.org/10.1063/1.3599848 bibtex: '@article{Lorenz_Kitzerow_2011, title={Efficient electro-optic switching in a photonic liquid crystal fiber}, volume={98}, DOI={10.1063/1.3599848}, number={24241106}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lorenz, Alexander and Kitzerow, Heinz-Siegfried}, year={2011} }' chicago: Lorenz, Alexander, and Heinz-Siegfried Kitzerow. “Efficient Electro-Optic Switching in a Photonic Liquid Crystal Fiber.” Applied Physics Letters 98, no. 24 (2011). https://doi.org/10.1063/1.3599848. ieee: 'A. Lorenz and H.-S. Kitzerow, “Efficient electro-optic switching in a photonic liquid crystal fiber,” Applied Physics Letters, vol. 98, no. 24, Art. no. 241106, 2011, doi: 10.1063/1.3599848.' mla: Lorenz, Alexander, and Heinz-Siegfried Kitzerow. “Efficient Electro-Optic Switching in a Photonic Liquid Crystal Fiber.” Applied Physics Letters, vol. 98, no. 24, 241106, AIP Publishing, 2011, doi:10.1063/1.3599848. short: A. Lorenz, H.-S. Kitzerow, Applied Physics Letters 98 (2011). date_created: 2023-01-24T18:42:25Z date_updated: 2023-01-24T18:42:50Z department: - _id: '313' - _id: '230' - _id: '638' doi: 10.1063/1.3599848 intvolume: ' 98' issue: '24' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Efficient electro-optic switching in a photonic liquid crystal fiber type: journal_article user_id: '254' volume: 98 year: '2011' ... --- _id: '7975' article_number: '033111' author: - first_name: W. full_name: Lei, W. last_name: Lei - first_name: C. full_name: Notthoff, C. last_name: Notthoff - first_name: A. full_name: Lorke, A. last_name: Lorke - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Lei W, Notthoff C, Lorke A, Reuter D, Wieck AD. Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied Physics Letters. 2010;96(3). doi:10.1063/1.3293445 apa: Lei, W., Notthoff, C., Lorke, A., Reuter, D., & Wieck, A. D. (2010). Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied Physics Letters, 96(3). https://doi.org/10.1063/1.3293445 bibtex: '@article{Lei_Notthoff_Lorke_Reuter_Wieck_2010, title={Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy}, volume={96}, DOI={10.1063/1.3293445}, number={3033111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lei, W. and Notthoff, C. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2010} }' chicago: Lei, W., C. Notthoff, A. Lorke, Dirk Reuter, and A. D. Wieck. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters 96, no. 3 (2010). https://doi.org/10.1063/1.3293445. ieee: W. Lei, C. Notthoff, A. Lorke, D. Reuter, and A. D. Wieck, “Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy,” Applied Physics Letters, vol. 96, no. 3, 2010. mla: Lei, W., et al. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters, vol. 96, no. 3, 033111, AIP Publishing, 2010, doi:10.1063/1.3293445. short: W. Lei, C. Notthoff, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters 96 (2010). date_created: 2019-02-21T13:32:39Z date_updated: 2022-01-06T07:03:48Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3293445 intvolume: ' 96' issue: '3' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy type: journal_article user_id: '42514' volume: 96 year: '2010' ... --- _id: '7980' article_number: '033111' author: - first_name: W. full_name: Lei, W. last_name: Lei - first_name: C. full_name: Notthoff, C. last_name: Notthoff - first_name: A. full_name: Lorke, A. last_name: Lorke - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Lei W, Notthoff C, Lorke A, Reuter D, Wieck AD. Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied Physics Letters. 2010;96(3). doi:10.1063/1.3293445 apa: Lei, W., Notthoff, C., Lorke, A., Reuter, D., & Wieck, A. D. (2010). Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied Physics Letters, 96(3). https://doi.org/10.1063/1.3293445 bibtex: '@article{Lei_Notthoff_Lorke_Reuter_Wieck_2010, title={Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy}, volume={96}, DOI={10.1063/1.3293445}, number={3033111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lei, W. and Notthoff, C. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2010} }' chicago: Lei, W., C. Notthoff, A. Lorke, Dirk Reuter, and A. D. Wieck. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters 96, no. 3 (2010). https://doi.org/10.1063/1.3293445. ieee: W. Lei, C. Notthoff, A. Lorke, D. Reuter, and A. D. Wieck, “Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy,” Applied Physics Letters, vol. 96, no. 3, 2010. mla: Lei, W., et al. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters, vol. 96, no. 3, 033111, AIP Publishing, 2010, doi:10.1063/1.3293445. short: W. Lei, C. Notthoff, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters 96 (2010). date_created: 2019-02-21T14:13:43Z date_updated: 2022-01-06T07:03:48Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3293445 intvolume: ' 96' issue: '3' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy type: journal_article user_id: '42514' volume: 96 year: '2010' ... --- _id: '7982' article_number: '022110' author: - first_name: M. full_name: Csontos, M. last_name: Csontos - first_name: Y. full_name: Komijani, Y. last_name: Komijani - first_name: I. full_name: Shorubalko, I. last_name: Shorubalko - first_name: K. full_name: Ensslin, K. last_name: Ensslin - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Csontos M, Komijani Y, Shorubalko I, Ensslin K, Reuter D, Wieck AD. Nanostructures in p-GaAs with improved tunability. Applied Physics Letters. 2010;97(2). doi:10.1063/1.3463465 apa: Csontos, M., Komijani, Y., Shorubalko, I., Ensslin, K., Reuter, D., & Wieck, A. D. (2010). Nanostructures in p-GaAs with improved tunability. Applied Physics Letters, 97(2). https://doi.org/10.1063/1.3463465 bibtex: '@article{Csontos_Komijani_Shorubalko_Ensslin_Reuter_Wieck_2010, title={Nanostructures in p-GaAs with improved tunability}, volume={97}, DOI={10.1063/1.3463465}, number={2022110}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Csontos, M. and Komijani, Y. and Shorubalko, I. and Ensslin, K. and Reuter, Dirk and Wieck, A. D.}, year={2010} }' chicago: Csontos, M., Y. Komijani, I. Shorubalko, K. Ensslin, Dirk Reuter, and A. D. Wieck. “Nanostructures in P-GaAs with Improved Tunability.” Applied Physics Letters 97, no. 2 (2010). https://doi.org/10.1063/1.3463465. ieee: M. Csontos, Y. Komijani, I. Shorubalko, K. Ensslin, D. Reuter, and A. D. Wieck, “Nanostructures in p-GaAs with improved tunability,” Applied Physics Letters, vol. 97, no. 2, 2010. mla: Csontos, M., et al. “Nanostructures in P-GaAs with Improved Tunability.” Applied Physics Letters, vol. 97, no. 2, 022110, AIP Publishing, 2010, doi:10.1063/1.3463465. short: M. Csontos, Y. Komijani, I. Shorubalko, K. Ensslin, D. Reuter, A.D. Wieck, Applied Physics Letters 97 (2010). date_created: 2019-02-21T14:33:40Z date_updated: 2022-01-06T07:03:48Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3463465 intvolume: ' 97' issue: '2' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Nanostructures in p-GaAs with improved tunability type: journal_article user_id: '42514' volume: 97 year: '2010' ... --- _id: '7983' article_number: '062112' author: - first_name: M. full_name: Wiemann, M. last_name: Wiemann - first_name: U. full_name: Wieser, U. last_name: Wieser - first_name: U. full_name: Kunze, U. last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Wiemann M, Wieser U, Kunze U, Reuter D, Wieck AD. Full-wave rectification based upon hot-electron thermopower. Applied Physics Letters. 2010;97(6). doi:10.1063/1.3475922 apa: Wiemann, M., Wieser, U., Kunze, U., Reuter, D., & Wieck, A. D. (2010). Full-wave rectification based upon hot-electron thermopower. Applied Physics Letters, 97(6). https://doi.org/10.1063/1.3475922 bibtex: '@article{Wiemann_Wieser_Kunze_Reuter_Wieck_2010, title={Full-wave rectification based upon hot-electron thermopower}, volume={97}, DOI={10.1063/1.3475922}, number={6062112}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wiemann, M. and Wieser, U. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2010} }' chicago: Wiemann, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Full-Wave Rectification Based upon Hot-Electron Thermopower.” Applied Physics Letters 97, no. 6 (2010). https://doi.org/10.1063/1.3475922. ieee: M. Wiemann, U. Wieser, U. Kunze, D. Reuter, and A. D. Wieck, “Full-wave rectification based upon hot-electron thermopower,” Applied Physics Letters, vol. 97, no. 6, 2010. mla: Wiemann, M., et al. “Full-Wave Rectification Based upon Hot-Electron Thermopower.” Applied Physics Letters, vol. 97, no. 6, 062112, AIP Publishing, 2010, doi:10.1063/1.3475922. short: M. Wiemann, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters 97 (2010). date_created: 2019-02-21T14:34:50Z date_updated: 2022-01-06T07:03:48Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3475922 intvolume: ' 97' issue: '6' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Full-wave rectification based upon hot-electron thermopower type: journal_article user_id: '42514' volume: 97 year: '2010' ... --- _id: '7990' article_number: '143101' author: - first_name: M. full_name: Mehta, M. last_name: Mehta - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: S. full_name: Michaelis de Vasconcellos, S. last_name: Michaelis de Vasconcellos - first_name: A. full_name: Zrenner, A. last_name: Zrenner - first_name: C. full_name: Meier, C. last_name: Meier citation: ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812 apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters, 97(14). https://doi.org/10.1063/1.3488812 bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={10.1063/1.3488812}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, A. and Meier, C.}, year={2010} }' chicago: Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters 97, no. 14 (2010). https://doi.org/10.1063/1.3488812. ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010. mla: Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:10.1063/1.3488812. short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010). date_created: 2019-02-21T14:41:19Z date_updated: 2022-01-06T07:03:48Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3488812 intvolume: ' 97' issue: '14' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode type: journal_article user_id: '42514' volume: 97 year: '2010' ... --- _id: '4550' abstract: - lang: eng text: We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices. article_number: '143101' article_type: original author: - first_name: M. full_name: Mehta, M. last_name: Mehta - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: S. full_name: Michaelis de Vasconcellos, S. last_name: Michaelis de Vasconcellos - first_name: Artur full_name: Zrenner, Artur id: '606' last_name: Zrenner orcid: 0000-0002-5190-0944 - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 citation: ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812 apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters, 97(14). https://doi.org/10.1063/1.3488812 bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={10.1063/1.3488812}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }' chicago: Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters 97, no. 14 (2010). https://doi.org/10.1063/1.3488812. ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010. mla: Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:10.1063/1.3488812. short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010). date_created: 2018-09-20T12:38:51Z date_updated: 2022-01-06T07:01:09Z department: - _id: '15' - _id: '230' - _id: '35' - _id: '287' doi: 10.1063/1.3488812 intvolume: ' 97' issue: '14' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode type: journal_article user_id: '20798' volume: 97 year: '2010' ... --- _id: '4194' abstract: - lang: eng text: A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy. The device shows a clear field effect at positive bias voltages with V_th=0.6 V. The HFET output characteristics were calculated using ATLAS simulation program. The electron channel at the cubic AlGaN/GaN interface was detected by room temperature capacitance-voltage measurements. article_number: '253501' article_type: original author: - first_name: E. full_name: Tschumak, E. last_name: Tschumak - first_name: R. full_name: Granzner, R. last_name: Granzner - first_name: Jörg full_name: Lindner, Jörg id: '20797' last_name: Lindner - first_name: F. full_name: Schwierz, F. last_name: Schwierz - first_name: K. full_name: Lischka, K. last_name: Lischka - first_name: H. full_name: Nagasawa, H. last_name: Nagasawa - first_name: M. full_name: Abe, M. last_name: Abe - first_name: Donald full_name: As, Donald last_name: As citation: ama: Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters. 2010;96(25). doi:10.1063/1.3455066 apa: Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa, H., … As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters, 96(25). https://doi.org/10.1063/1.3455066 bibtex: '@article{Tschumak_Granzner_Lindner_Schwierz_Lischka_Nagasawa_Abe_As_2010, title={Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)}, volume={96}, DOI={10.1063/1.3455066}, number={25253501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2010} }' chicago: Tschumak, E., R. Granzner, Jörg Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, and Donald As. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters 96, no. 25 (2010). https://doi.org/10.1063/1.3455066. ieee: E. Tschumak et al., “Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001),” Applied Physics Letters, vol. 96, no. 25, 2010. mla: Tschumak, E., et al. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters, vol. 96, no. 25, 253501, AIP Publishing, 2010, doi:10.1063/1.3455066. short: E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, D. As, Applied Physics Letters 96 (2010). date_created: 2018-08-28T11:56:08Z date_updated: 2022-01-06T07:00:33Z ddc: - '530' department: - _id: '15' - _id: '286' doi: 10.1063/1.3455066 file: - access_level: closed content_type: application/pdf creator: hclaudia date_created: 2018-08-28T11:58:27Z date_updated: 2018-08-28T11:58:27Z file_id: '4195' file_name: Non-polar cubic AlGaN-GaN HFET on Ar+ implanted 3C-SiC 001.pdf file_size: 277385 relation: main_file success: 1 file_date_updated: 2018-08-28T11:58:27Z has_accepted_license: '1' intvolume: ' 96' issue: '25' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001) type: journal_article user_id: '55706' volume: 96 year: '2010' ... --- _id: '18632' abstract: - lang: eng text: "We present measurements of the effective electron mass in biaxial tensile strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI and SOI were fabricated and Shubnikov–de Haas oscillations in the temperature range of T=0.4–4 K for magnetic fields of B=0–10 T were measured. The effective electron mass in SSOI and SOI samples was determined as mt=(0.20±0.01)m0. This result is in excellent agreement with first-principles calculations of the\r\neffective electron mass in the presence of strain." article_number: '182101' article_type: original author: - first_name: Sebastian F. full_name: Feste, Sebastian F. last_name: Feste - first_name: Thomas full_name: Schäpers, Thomas last_name: Schäpers - first_name: Dan full_name: Buca, Dan last_name: Buca - first_name: Qing Tai full_name: Zhao, Qing Tai last_name: Zhao - first_name: Joachim full_name: Knoch, Joachim last_name: Knoch - first_name: Mohammed full_name: Bouhassoune, Mohammed last_name: Bouhassoune - first_name: Arno full_name: Schindlmayr, Arno id: '458' last_name: Schindlmayr orcid: 0000-0002-4855-071X - first_name: Siegfried full_name: Mantl, Siegfried last_name: Mantl citation: ama: Feste SF, Schäpers T, Buca D, et al. Measurement of effective electron mass in biaxial tensile strained silicon on insulator. Applied Physics Letters. 2009;95(18). doi:10.1063/1.3254330 apa: Feste, S. F., Schäpers, T., Buca, D., Zhao, Q. T., Knoch, J., Bouhassoune, M., … Mantl, S. (2009). Measurement of effective electron mass in biaxial tensile strained silicon on insulator. Applied Physics Letters, 95(18). https://doi.org/10.1063/1.3254330 bibtex: '@article{Feste_Schäpers_Buca_Zhao_Knoch_Bouhassoune_Schindlmayr_Mantl_2009, title={Measurement of effective electron mass in biaxial tensile strained silicon on insulator}, volume={95}, DOI={10.1063/1.3254330}, number={18182101}, journal={Applied Physics Letters}, publisher={American Institute of Physics}, author={Feste, Sebastian F. and Schäpers, Thomas and Buca, Dan and Zhao, Qing Tai and Knoch, Joachim and Bouhassoune, Mohammed and Schindlmayr, Arno and Mantl, Siegfried}, year={2009} }' chicago: Feste, Sebastian F., Thomas Schäpers, Dan Buca, Qing Tai Zhao, Joachim Knoch, Mohammed Bouhassoune, Arno Schindlmayr, and Siegfried Mantl. “Measurement of Effective Electron Mass in Biaxial Tensile Strained Silicon on Insulator.” Applied Physics Letters 95, no. 18 (2009). https://doi.org/10.1063/1.3254330. ieee: S. F. Feste et al., “Measurement of effective electron mass in biaxial tensile strained silicon on insulator,” Applied Physics Letters, vol. 95, no. 18, 2009. mla: Feste, Sebastian F., et al. “Measurement of Effective Electron Mass in Biaxial Tensile Strained Silicon on Insulator.” Applied Physics Letters, vol. 95, no. 18, 182101, American Institute of Physics, 2009, doi:10.1063/1.3254330. short: S.F. Feste, T. Schäpers, D. Buca, Q.T. Zhao, J. Knoch, M. Bouhassoune, A. Schindlmayr, S. Mantl, Applied Physics Letters 95 (2009). date_created: 2020-08-28T22:24:30Z date_updated: 2022-01-06T06:53:49Z ddc: - '530' department: - _id: '296' doi: 10.1063/1.3254330 external_id: isi: - '000271666800034' file: - access_level: open_access content_type: application/pdf creator: schindlm date_created: 2020-08-28T22:28:31Z date_updated: 2020-08-30T15:29:43Z description: © 2009 American Institute of Physics file_id: '18633' file_name: 1.3254330.pdf file_size: 198836 relation: main_file title: Measurement of effective electron mass in biaxial tensile strained silicon on insulator file_date_updated: 2020-08-30T15:29:43Z has_accepted_license: '1' intvolume: ' 95' isi: '1' issue: '18' language: - iso: eng oa: '1' publication: Applied Physics Letters publication_identifier: eissn: - 1077-3118 issn: - 0003-6951 publication_status: published publisher: American Institute of Physics quality_controlled: '1' status: public title: Measurement of effective electron mass in biaxial tensile strained silicon on insulator type: journal_article user_id: '458' volume: 95 year: '2009' ... --- _id: '7973' article_number: '022107' author: - first_name: S. S. full_name: Buchholz, S. S. last_name: Buchholz - first_name: S. F. full_name: Fischer, S. F. last_name: Fischer - first_name: U. full_name: Kunze, U. last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Buchholz SS, Fischer SF, Kunze U, Reuter D, Wieck AD. Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. Applied Physics Letters. 2009;94(2). doi:10.1063/1.3069281 apa: Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., & Wieck, A. D. (2009). Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. Applied Physics Letters, 94(2). https://doi.org/10.1063/1.3069281 bibtex: '@article{Buchholz_Fischer_Kunze_Reuter_Wieck_2009, title={Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring}, volume={94}, DOI={10.1063/1.3069281}, number={2022107}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Buchholz, S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2009} }' chicago: Buchholz, S. S., S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” Applied Physics Letters 94, no. 2 (2009). https://doi.org/10.1063/1.3069281. ieee: S. S. Buchholz, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring,” Applied Physics Letters, vol. 94, no. 2, 2009. mla: Buchholz, S. S., et al. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” Applied Physics Letters, vol. 94, no. 2, 022107, AIP Publishing, 2009, doi:10.1063/1.3069281. short: S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters 94 (2009). date_created: 2019-02-21T13:28:29Z date_updated: 2022-01-06T07:03:48Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3069281 intvolume: ' 94' issue: '2' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring type: journal_article user_id: '42514' volume: 94 year: '2009' ... --- _id: '8579' article_number: '022107' author: - first_name: S. S. full_name: Buchholz, S. S. last_name: Buchholz - first_name: S. F. full_name: Fischer, S. F. last_name: Fischer - first_name: U. full_name: Kunze, U. last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Buchholz SS, Fischer SF, Kunze U, Reuter D, Wieck AD. Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. Applied Physics Letters. 2009. doi:10.1063/1.3069281 apa: Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., & Wieck, A. D. (2009). Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. Applied Physics Letters. https://doi.org/10.1063/1.3069281 bibtex: '@article{Buchholz_Fischer_Kunze_Reuter_Wieck_2009, title={Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring}, DOI={10.1063/1.3069281}, number={022107}, journal={Applied Physics Letters}, author={Buchholz, S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2009} }' chicago: Buchholz, S. S., S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” Applied Physics Letters, 2009. https://doi.org/10.1063/1.3069281. ieee: S. S. Buchholz, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring,” Applied Physics Letters, 2009. mla: Buchholz, S. S., et al. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” Applied Physics Letters, 022107, 2009, doi:10.1063/1.3069281. short: S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2009). date_created: 2019-03-26T08:34:37Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3069281 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring type: journal_article user_id: '42514' year: '2009' ... --- _id: '8580' article_number: '023107' author: - first_name: J. H. full_name: Blokland, J. H. last_name: Blokland - first_name: M. full_name: Bozkurt, M. last_name: Bozkurt - first_name: J. M. full_name: Ulloa, J. M. last_name: Ulloa - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: P. M. full_name: Koenraad, P. M. last_name: Koenraad - first_name: P. C. M. full_name: Christianen, P. C. M. last_name: Christianen - first_name: J. C. full_name: Maan, J. C. last_name: Maan citation: ama: Blokland JH, Bozkurt M, Ulloa JM, et al. Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy. Applied Physics Letters. 2009. doi:10.1063/1.3072366 apa: Blokland, J. H., Bozkurt, M., Ulloa, J. M., Reuter, D., Wieck, A. D., Koenraad, P. M., … Maan, J. C. (2009). Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy. Applied Physics Letters. https://doi.org/10.1063/1.3072366 bibtex: '@article{Blokland_Bozkurt_Ulloa_Reuter_Wieck_Koenraad_Christianen_Maan_2009, title={Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy}, DOI={10.1063/1.3072366}, number={023107}, journal={Applied Physics Letters}, author={Blokland, J. H. and Bozkurt, M. and Ulloa, J. M. and Reuter, Dirk and Wieck, A. D. and Koenraad, P. M. and Christianen, P. C. M. and Maan, J. C.}, year={2009} }' chicago: Blokland, J. H., M. Bozkurt, J. M. Ulloa, Dirk Reuter, A. D. Wieck, P. M. Koenraad, P. C. M. Christianen, and J. C. Maan. “Ellipsoidal InAs Quantum Dots Observed by Cross-Sectional Scanning Tunneling Microscopy.” Applied Physics Letters, 2009. https://doi.org/10.1063/1.3072366. ieee: J. H. Blokland et al., “Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy,” Applied Physics Letters, 2009. mla: Blokland, J. H., et al. “Ellipsoidal InAs Quantum Dots Observed by Cross-Sectional Scanning Tunneling Microscopy.” Applied Physics Letters, 023107, 2009, doi:10.1063/1.3072366. short: J.H. Blokland, M. Bozkurt, J.M. Ulloa, D. Reuter, A.D. Wieck, P.M. Koenraad, P.C.M. Christianen, J.C. Maan, Applied Physics Letters (2009). date_created: 2019-03-26T08:42:07Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3072366 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy type: journal_article user_id: '42514' year: '2009' ... --- _id: '8585' article_number: '022113' author: - first_name: B. full_name: Marquardt, B. last_name: Marquardt - first_name: M. full_name: Geller, M. last_name: Geller - first_name: A. full_name: Lorke, A. last_name: Lorke - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Marquardt B, Geller M, Lorke A, Reuter D, Wieck AD. Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots. Applied Physics Letters. 2009. doi:10.1063/1.3175724 apa: Marquardt, B., Geller, M., Lorke, A., Reuter, D., & Wieck, A. D. (2009). Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots. Applied Physics Letters. https://doi.org/10.1063/1.3175724 bibtex: '@article{Marquardt_Geller_Lorke_Reuter_Wieck_2009, title={Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots}, DOI={10.1063/1.3175724}, number={022113}, journal={Applied Physics Letters}, author={Marquardt, B. and Geller, M. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2009} }' chicago: Marquardt, B., M. Geller, A. Lorke, Dirk Reuter, and A. D. Wieck. “Using a Two-Dimensional Electron Gas to Study Nonequilibrium Tunneling Dynamics and Charge Storage in Self-Assembled Quantum Dots.” Applied Physics Letters, 2009. https://doi.org/10.1063/1.3175724. ieee: B. Marquardt, M. Geller, A. Lorke, D. Reuter, and A. D. Wieck, “Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots,” Applied Physics Letters, 2009. mla: Marquardt, B., et al. “Using a Two-Dimensional Electron Gas to Study Nonequilibrium Tunneling Dynamics and Charge Storage in Self-Assembled Quantum Dots.” Applied Physics Letters, 022113, 2009, doi:10.1063/1.3175724. short: B. Marquardt, M. Geller, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters (2009). date_created: 2019-03-26T08:55:40Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3175724 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots type: journal_article user_id: '42514' year: '2009' ... --- _id: '7640' article_number: '193111' author: - first_name: W. full_name: Lei, W. last_name: Lei - first_name: M. full_name: Offer, M. last_name: Offer - first_name: A. full_name: Lorke, A. last_name: Lorke - first_name: C. full_name: Notthoff, C. last_name: Notthoff - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: O. full_name: Wibbelhoff, O. last_name: Wibbelhoff - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Lei W, Offer M, Lorke A, et al. Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy. Applied Physics Letters. 2008;92(19). doi:10.1063/1.2920439 apa: Lei, W., Offer, M., Lorke, A., Notthoff, C., Meier, C., Wibbelhoff, O., & Wieck, A. D. (2008). Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy. Applied Physics Letters, 92(19). https://doi.org/10.1063/1.2920439 bibtex: '@article{Lei_Offer_Lorke_Notthoff_Meier_Wibbelhoff_Wieck_2008, title={Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy}, volume={92}, DOI={10.1063/1.2920439}, number={19193111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lei, W. and Offer, M. and Lorke, A. and Notthoff, C. and Meier, Cedrik and Wibbelhoff, O. and Wieck, A. D.}, year={2008} }' chicago: Lei, W., M. Offer, A. Lorke, C. Notthoff, Cedrik Meier, O. Wibbelhoff, and A. D. Wieck. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage and Photoluminescence Spectroscopy.” Applied Physics Letters 92, no. 19 (2008). https://doi.org/10.1063/1.2920439. ieee: W. Lei et al., “Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy,” Applied Physics Letters, vol. 92, no. 19, 2008. mla: Lei, W., et al. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage and Photoluminescence Spectroscopy.” Applied Physics Letters, vol. 92, no. 19, 193111, AIP Publishing, 2008, doi:10.1063/1.2920439. short: W. Lei, M. Offer, A. Lorke, C. Notthoff, C. Meier, O. Wibbelhoff, A.D. Wieck, Applied Physics Letters 92 (2008). date_created: 2019-02-13T11:30:23Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2920439 extern: '1' intvolume: ' 92' issue: '19' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy type: journal_article user_id: '20798' volume: 92 year: '2008' ... --- _id: '8603' article_number: '112111' author: - first_name: F.-Y. full_name: Lo, F.-Y. last_name: Lo - first_name: A. full_name: Melnikov, A. last_name: Melnikov - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Y. full_name: Cordier, Y. last_name: Cordier - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Lo F-Y, Melnikov A, Reuter D, Cordier Y, Wieck AD. Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. Applied Physics Letters. 2008. doi:10.1063/1.2899968 apa: Lo, F.-Y., Melnikov, A., Reuter, D., Cordier, Y., & Wieck, A. D. (2008). Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. Applied Physics Letters. https://doi.org/10.1063/1.2899968 bibtex: '@article{Lo_Melnikov_Reuter_Cordier_Wieck_2008, title={Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures}, DOI={10.1063/1.2899968}, number={112111}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Cordier, Y. and Wieck, A. D.}, year={2008} }' chicago: Lo, F.-Y., A. Melnikov, Dirk Reuter, Y. Cordier, and A. D. Wieck. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2899968. ieee: F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, “Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures,” Applied Physics Letters, 2008. mla: Lo, F. Y., et al. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.” Applied Physics Letters, 112111, 2008, doi:10.1063/1.2899968. short: F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, A.D. Wieck, Applied Physics Letters (2008). date_created: 2019-03-26T09:26:36Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2899968 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures type: journal_article user_id: '42514' year: '2008' ... --- _id: '8607' article_number: '241920' author: - first_name: P. E. full_name: Hohage, P. E. last_name: Hohage - first_name: J. full_name: Nannen, J. last_name: Nannen - first_name: S. full_name: Halm, S. last_name: Halm - first_name: G. full_name: Bacher, G. last_name: Bacher - first_name: M. full_name: Wahle, M. last_name: Wahle - first_name: S. F. full_name: Fischer, S. F. last_name: Fischer - first_name: U. full_name: Kunze, U. last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Hohage PE, Nannen J, Halm S, et al. Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature. Applied Physics Letters. 2008. doi:10.1063/1.2943279 apa: Hohage, P. E., Nannen, J., Halm, S., Bacher, G., Wahle, M., Fischer, S. F., … Wieck, A. D. (2008). Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature. Applied Physics Letters. https://doi.org/10.1063/1.2943279 bibtex: '@article{Hohage_Nannen_Halm_Bacher_Wahle_Fischer_Kunze_Reuter_Wieck_2008, title={Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature}, DOI={10.1063/1.2943279}, number={241920}, journal={Applied Physics Letters}, author={Hohage, P. E. and Nannen, J. and Halm, S. and Bacher, G. and Wahle, M. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2008} }' chicago: Hohage, P. E., J. Nannen, S. Halm, G. Bacher, M. Wahle, S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck. “Coherent Spin Dynamics in Permalloy-GaAs Hybrids at Room Temperature.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2943279. ieee: P. E. Hohage et al., “Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature,” Applied Physics Letters, 2008. mla: Hohage, P. E., et al. “Coherent Spin Dynamics in Permalloy-GaAs Hybrids at Room Temperature.” Applied Physics Letters, 241920, 2008, doi:10.1063/1.2943279. short: P.E. Hohage, J. Nannen, S. Halm, G. Bacher, M. Wahle, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2008). date_created: 2019-03-26T09:51:24Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2943279 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature type: journal_article user_id: '42514' year: '2008' ... --- _id: '8608' article_number: '242102' author: - first_name: S. full_name: Hövel, S. last_name: Hövel - first_name: N. C. full_name: Gerhardt, N. C. last_name: Gerhardt - first_name: M. R. full_name: Hofmann, M. R. last_name: Hofmann - first_name: F.-Y. full_name: Lo, F.-Y. last_name: Lo - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: E. full_name: Schuster, E. last_name: Schuster - first_name: W. full_name: Keune, W. last_name: Keune - first_name: H. full_name: Wende, H. last_name: Wende - first_name: O. full_name: Petracic, O. last_name: Petracic - first_name: K. full_name: Westerholt, K. last_name: Westerholt citation: ama: Hövel S, Gerhardt NC, Hofmann MR, et al. Electrical detection of photoinduced spins both at room temperature and in remanence. Applied Physics Letters. 2008. doi:10.1063/1.2948856 apa: Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Reuter, D., Wieck, A. D., … Westerholt, K. (2008). Electrical detection of photoinduced spins both at room temperature and in remanence. Applied Physics Letters. https://doi.org/10.1063/1.2948856 bibtex: '@article{Hövel_Gerhardt_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Wende_Petracic_et al._2008, title={Electrical detection of photoinduced spins both at room temperature and in remanence}, DOI={10.1063/1.2948856}, number={242102}, journal={Applied Physics Letters}, author={Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Keune, W. and Wende, H. and Petracic, O. and et al.}, year={2008} }' chicago: Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, Dirk Reuter, A. D. Wieck, E. Schuster, et al. “Electrical Detection of Photoinduced Spins Both at Room Temperature and in Remanence.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2948856. ieee: S. Hövel et al., “Electrical detection of photoinduced spins both at room temperature and in remanence,” Applied Physics Letters, 2008. mla: Hövel, S., et al. “Electrical Detection of Photoinduced Spins Both at Room Temperature and in Remanence.” Applied Physics Letters, 242102, 2008, doi:10.1063/1.2948856. short: S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D. Wieck, E. Schuster, W. Keune, H. Wende, O. Petracic, K. Westerholt, Applied Physics Letters (2008). date_created: 2019-03-26T09:52:27Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2948856 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Electrical detection of photoinduced spins both at room temperature and in remanence type: journal_article user_id: '42514' year: '2008' ... --- _id: '8609' article_number: '021117' author: - first_name: S. full_name: Hövel, S. last_name: Hövel - first_name: N. C. full_name: Gerhardt, N. C. last_name: Gerhardt - first_name: M. R. full_name: Hofmann, M. R. last_name: Hofmann - first_name: F.-Y. full_name: Lo, F.-Y. last_name: Lo - first_name: A. full_name: Ludwig, A. last_name: Ludwig - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: E. full_name: Schuster, E. last_name: Schuster - first_name: H. full_name: Wende, H. last_name: Wende - first_name: W. full_name: Keune, W. last_name: Keune - first_name: O. full_name: Petracic, O. last_name: Petracic - first_name: K. full_name: Westerholt, K. last_name: Westerholt citation: ama: Hövel S, Gerhardt NC, Hofmann MR, et al. Room temperature electrical spin injection in remanence. Applied Physics Letters. 2008. doi:10.1063/1.2957469 apa: Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Ludwig, A., Reuter, D., … Westerholt, K. (2008). Room temperature electrical spin injection in remanence. Applied Physics Letters. https://doi.org/10.1063/1.2957469 bibtex: '@article{Hövel_Gerhardt_Hofmann_Lo_Ludwig_Reuter_Wieck_Schuster_Wende_Keune_et al._2008, title={Room temperature electrical spin injection in remanence}, DOI={10.1063/1.2957469}, number={021117}, journal={Applied Physics Letters}, author={Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Wende, H. and Keune, W. and et al.}, year={2008} }' chicago: Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, A. Ludwig, Dirk Reuter, A. D. Wieck, et al. “Room Temperature Electrical Spin Injection in Remanence.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2957469. ieee: S. Hövel et al., “Room temperature electrical spin injection in remanence,” Applied Physics Letters, 2008. mla: Hövel, S., et al. “Room Temperature Electrical Spin Injection in Remanence.” Applied Physics Letters, 021117, 2008, doi:10.1063/1.2957469. short: S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A.D. Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt, Applied Physics Letters (2008). date_created: 2019-03-26T09:53:44Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2957469 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Room temperature electrical spin injection in remanence type: journal_article user_id: '42514' year: '2008' ... --- _id: '39749' article_number: '131903' author: - first_name: A. full_name: Hoischen, A. last_name: Hoischen - first_name: S. A. full_name: Benning, S. A. last_name: Benning - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Hoischen A, Benning SA, Kitzerow H-S. Submicrometer periodic patterns fixed by photopolymerization of dissipative structures. Applied Physics Letters. 2008;93(13). doi:10.1063/1.2990762 apa: Hoischen, A., Benning, S. A., & Kitzerow, H.-S. (2008). Submicrometer periodic patterns fixed by photopolymerization of dissipative structures. Applied Physics Letters, 93(13), Article 131903. https://doi.org/10.1063/1.2990762 bibtex: '@article{Hoischen_Benning_Kitzerow_2008, title={Submicrometer periodic patterns fixed by photopolymerization of dissipative structures}, volume={93}, DOI={10.1063/1.2990762}, number={13131903}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hoischen, A. and Benning, S. A. and Kitzerow, Heinz-Siegfried}, year={2008} }' chicago: Hoischen, A., S. A. Benning, and Heinz-Siegfried Kitzerow. “Submicrometer Periodic Patterns Fixed by Photopolymerization of Dissipative Structures.” Applied Physics Letters 93, no. 13 (2008). https://doi.org/10.1063/1.2990762. ieee: 'A. Hoischen, S. A. Benning, and H.-S. Kitzerow, “Submicrometer periodic patterns fixed by photopolymerization of dissipative structures,” Applied Physics Letters, vol. 93, no. 13, Art. no. 131903, 2008, doi: 10.1063/1.2990762.' mla: Hoischen, A., et al. “Submicrometer Periodic Patterns Fixed by Photopolymerization of Dissipative Structures.” Applied Physics Letters, vol. 93, no. 13, 131903, AIP Publishing, 2008, doi:10.1063/1.2990762. short: A. Hoischen, S.A. Benning, H.-S. Kitzerow, Applied Physics Letters 93 (2008). date_created: 2023-01-24T18:52:43Z date_updated: 2023-01-24T18:53:04Z department: - _id: '313' - _id: '638' doi: 10.1063/1.2990762 intvolume: ' 93' issue: '13' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Submicrometer periodic patterns fixed by photopolymerization of dissipative structures type: journal_article user_id: '254' volume: 93 year: '2008' ... --- _id: '39751' article_number: '183304' author: - first_name: Andreas full_name: Redler, Andreas last_name: Redler - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Redler A, Kitzerow H-S. Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal. Applied Physics Letters. 2008;93(18). doi:10.1063/1.3021364 apa: Redler, A., & Kitzerow, H.-S. (2008). Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal. Applied Physics Letters, 93(18), Article 183304. https://doi.org/10.1063/1.3021364 bibtex: '@article{Redler_Kitzerow_2008, title={Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal}, volume={93}, DOI={10.1063/1.3021364}, number={18183304}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Redler, Andreas and Kitzerow, Heinz-Siegfried}, year={2008} }' chicago: Redler, Andreas, and Heinz-Siegfried Kitzerow. “Influence of Doping on the Photorefractive Properties of a Polymer-Dispersed Liquid Crystal.” Applied Physics Letters 93, no. 18 (2008). https://doi.org/10.1063/1.3021364. ieee: 'A. Redler and H.-S. Kitzerow, “Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal,” Applied Physics Letters, vol. 93, no. 18, Art. no. 183304, 2008, doi: 10.1063/1.3021364.' mla: Redler, Andreas, and Heinz-Siegfried Kitzerow. “Influence of Doping on the Photorefractive Properties of a Polymer-Dispersed Liquid Crystal.” Applied Physics Letters, vol. 93, no. 18, 183304, AIP Publishing, 2008, doi:10.1063/1.3021364. short: A. Redler, H.-S. Kitzerow, Applied Physics Letters 93 (2008). date_created: 2023-01-24T18:53:20Z date_updated: 2023-01-24T18:53:34Z department: - _id: '313' - _id: '638' doi: 10.1063/1.3021364 intvolume: ' 93' issue: '18' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal type: journal_article user_id: '254' volume: 93 year: '2008' ... --- _id: '26076' article_number: '151109' author: - first_name: Xiao-Feng full_name: Han, Xiao-Feng last_name: Han - first_name: Yu-Xiang full_name: Weng, Yu-Xiang last_name: Weng - first_name: Rui full_name: Wang, Rui last_name: Wang - first_name: Xi-Hao full_name: Chen, Xi-Hao last_name: Chen - first_name: Kai Hong full_name: Luo, Kai Hong id: '36389' last_name: Luo orcid: 0000-0003-1008-4976 - first_name: Ling-An full_name: Wu, Ling-An last_name: Wu - first_name: Jimin full_name: Zhao, Jimin last_name: Zhao citation: ama: Han X-F, Weng Y-X, Wang R, et al. Single-photon level ultrafast all-optical switching. Applied Physics Letters. Published online 2008. doi:10.1063/1.2909540 apa: Han, X.-F., Weng, Y.-X., Wang, R., Chen, X.-H., Luo, K. H., Wu, L.-A., & Zhao, J. (2008). Single-photon level ultrafast all-optical switching. Applied Physics Letters, Article 151109. https://doi.org/10.1063/1.2909540 bibtex: '@article{Han_Weng_Wang_Chen_Luo_Wu_Zhao_2008, title={Single-photon level ultrafast all-optical switching}, DOI={10.1063/1.2909540}, number={151109}, journal={Applied Physics Letters}, author={Han, Xiao-Feng and Weng, Yu-Xiang and Wang, Rui and Chen, Xi-Hao and Luo, Kai Hong and Wu, Ling-An and Zhao, Jimin}, year={2008} }' chicago: Han, Xiao-Feng, Yu-Xiang Weng, Rui Wang, Xi-Hao Chen, Kai Hong Luo, Ling-An Wu, and Jimin Zhao. “Single-Photon Level Ultrafast All-Optical Switching.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2909540. ieee: 'X.-F. Han et al., “Single-photon level ultrafast all-optical switching,” Applied Physics Letters, Art. no. 151109, 2008, doi: 10.1063/1.2909540.' mla: Han, Xiao-Feng, et al. “Single-Photon Level Ultrafast All-Optical Switching.” Applied Physics Letters, 151109, 2008, doi:10.1063/1.2909540. short: X.-F. Han, Y.-X. Weng, R. Wang, X.-H. Chen, K.H. Luo, L.-A. Wu, J. Zhao, Applied Physics Letters (2008). date_created: 2021-10-12T08:46:00Z date_updated: 2023-01-26T10:08:30Z doi: 10.1063/1.2909540 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Single-photon level ultrafast all-optical switching type: journal_article user_id: '36389' year: '2008' ... --- _id: '1761' article_number: '151109' author: - first_name: Carsten full_name: Rockstuhl, Carsten last_name: Rockstuhl - first_name: Falk full_name: Lederer, Falk last_name: Lederer - first_name: Thomas full_name: Zentgraf, Thomas id: '30525' last_name: Zentgraf orcid: 0000-0002-8662-1101 - first_name: Harald full_name: Giessen, Harald last_name: Giessen citation: ama: Rockstuhl C, Lederer F, Zentgraf T, Giessen H. Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays. Applied Physics Letters. 2007;91(15). doi:10.1063/1.2799240 apa: Rockstuhl, C., Lederer, F., Zentgraf, T., & Giessen, H. (2007). Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays. Applied Physics Letters, 91(15). https://doi.org/10.1063/1.2799240 bibtex: '@article{Rockstuhl_Lederer_Zentgraf_Giessen_2007, title={Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays}, volume={91}, DOI={10.1063/1.2799240}, number={15151109}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Rockstuhl, Carsten and Lederer, Falk and Zentgraf, Thomas and Giessen, Harald}, year={2007} }' chicago: Rockstuhl, Carsten, Falk Lederer, Thomas Zentgraf, and Harald Giessen. “Enhanced Transmission of Periodic, Quasiperiodic, and Random Nanoaperture Arrays.” Applied Physics Letters 91, no. 15 (2007). https://doi.org/10.1063/1.2799240. ieee: C. Rockstuhl, F. Lederer, T. Zentgraf, and H. Giessen, “Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays,” Applied Physics Letters, vol. 91, no. 15, 2007. mla: Rockstuhl, Carsten, et al. “Enhanced Transmission of Periodic, Quasiperiodic, and Random Nanoaperture Arrays.” Applied Physics Letters, vol. 91, no. 15, 151109, AIP Publishing, 2007, doi:10.1063/1.2799240. short: C. Rockstuhl, F. Lederer, T. Zentgraf, H. Giessen, Applied Physics Letters 91 (2007). date_created: 2018-03-23T13:07:38Z date_updated: 2022-01-06T06:53:16Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2799240 intvolume: ' 91' issue: '15' publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays type: journal_article user_id: '30525' volume: 91 year: '2007' ... --- _id: '7644' article_number: '143113' author: - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Kevin full_name: Hennessy, Kevin last_name: Hennessy citation: ama: Meier C, Hennessy K. Technique for tilting GaAs photonic crystal nanocavities out of plane. Applied Physics Letters. 2007;90(14). doi:10.1063/1.2719612 apa: Meier, C., & Hennessy, K. (2007). Technique for tilting GaAs photonic crystal nanocavities out of plane. Applied Physics Letters, 90(14). https://doi.org/10.1063/1.2719612 bibtex: '@article{Meier_Hennessy_2007, title={Technique for tilting GaAs photonic crystal nanocavities out of plane}, volume={90}, DOI={10.1063/1.2719612}, number={14143113}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Meier, Cedrik and Hennessy, Kevin}, year={2007} }' chicago: Meier, Cedrik, and Kevin Hennessy. “Technique for Tilting GaAs Photonic Crystal Nanocavities out of Plane.” Applied Physics Letters 90, no. 14 (2007). https://doi.org/10.1063/1.2719612. ieee: C. Meier and K. Hennessy, “Technique for tilting GaAs photonic crystal nanocavities out of plane,” Applied Physics Letters, vol. 90, no. 14, 2007. mla: Meier, Cedrik, and Kevin Hennessy. “Technique for Tilting GaAs Photonic Crystal Nanocavities out of Plane.” Applied Physics Letters, vol. 90, no. 14, 143113, AIP Publishing, 2007, doi:10.1063/1.2719612. short: C. Meier, K. Hennessy, Applied Physics Letters 90 (2007). date_created: 2019-02-13T11:34:33Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2719612 extern: '1' intvolume: ' 90' issue: '14' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Technique for tilting GaAs photonic crystal nanocavities out of plane type: journal_article user_id: '20798' volume: 90 year: '2007' ... --- _id: '8630' article_number: '262505' author: - first_name: F.-Y. full_name: Lo, F.-Y. last_name: Lo - first_name: A. full_name: Melnikov, A. last_name: Melnikov - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: V. full_name: Ney, V. last_name: Ney - first_name: T. full_name: Kammermeier, T. last_name: Kammermeier - first_name: A. full_name: Ney, A. last_name: Ney - first_name: J. full_name: Schörmann, J. last_name: Schörmann - first_name: S. full_name: Potthast, S. last_name: Potthast - first_name: D. J. full_name: As, D. J. last_name: As - first_name: K. full_name: Lischka, K. last_name: Lischka citation: ama: Lo F-Y, Melnikov A, Reuter D, et al. Magnetic and structural properties of Gd-implanted zinc-blende GaN. Applied Physics Letters. 2007. doi:10.1063/1.2753113 apa: Lo, F.-Y., Melnikov, A., Reuter, D., Wieck, A. D., Ney, V., Kammermeier, T., … Lischka, K. (2007). Magnetic and structural properties of Gd-implanted zinc-blende GaN. Applied Physics Letters. https://doi.org/10.1063/1.2753113 bibtex: '@article{Lo_Melnikov_Reuter_Wieck_Ney_Kammermeier_Ney_Schörmann_Potthast_As_et al._2007, title={Magnetic and structural properties of Gd-implanted zinc-blende GaN}, DOI={10.1063/1.2753113}, number={262505}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Wieck, A. D. and Ney, V. and Kammermeier, T. and Ney, A. and Schörmann, J. and Potthast, S. and As, D. J. and et al.}, year={2007} }' chicago: Lo, F.-Y., A. Melnikov, Dirk Reuter, A. D. Wieck, V. Ney, T. Kammermeier, A. Ney, et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende GaN.” Applied Physics Letters, 2007. https://doi.org/10.1063/1.2753113. ieee: F.-Y. Lo et al., “Magnetic and structural properties of Gd-implanted zinc-blende GaN,” Applied Physics Letters, 2007. mla: Lo, F. Y., et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende GaN.” Applied Physics Letters, 262505, 2007, doi:10.1063/1.2753113. short: F.-Y. Lo, A. Melnikov, D. Reuter, A.D. Wieck, V. Ney, T. Kammermeier, A. Ney, J. Schörmann, S. Potthast, D.J. As, K. Lischka, Applied Physics Letters (2007). date_created: 2019-03-26T10:23:42Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2753113 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Magnetic and structural properties of Gd-implanted zinc-blende GaN type: journal_article user_id: '42514' year: '2007' ... --- _id: '8632' article_number: '123108' author: - first_name: M. full_name: Mehta, M. last_name: Mehta - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. full_name: Melnikov, A. last_name: Melnikov - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: A. full_name: Remhof, A. last_name: Remhof citation: ama: Mehta M, Reuter D, Melnikov A, Wieck AD, Remhof A. Focused ion beam implantation induced site-selective growth of InAs quantum dots. Applied Physics Letters. 2007. doi:10.1063/1.2786836 apa: Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., & Remhof, A. (2007). Focused ion beam implantation induced site-selective growth of InAs quantum dots. Applied Physics Letters. https://doi.org/10.1063/1.2786836 bibtex: '@article{Mehta_Reuter_Melnikov_Wieck_Remhof_2007, title={Focused ion beam implantation induced site-selective growth of InAs quantum dots}, DOI={10.1063/1.2786836}, number={123108}, journal={Applied Physics Letters}, author={Mehta, M. and Reuter, Dirk and Melnikov, A. and Wieck, A. D. and Remhof, A.}, year={2007} }' chicago: Mehta, M., Dirk Reuter, A. Melnikov, A. D. Wieck, and A. Remhof. “Focused Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” Applied Physics Letters, 2007. https://doi.org/10.1063/1.2786836. ieee: M. Mehta, D. Reuter, A. Melnikov, A. D. Wieck, and A. Remhof, “Focused ion beam implantation induced site-selective growth of InAs quantum dots,” Applied Physics Letters, 2007. mla: Mehta, M., et al. “Focused Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” Applied Physics Letters, 123108, 2007, doi:10.1063/1.2786836. short: M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, A. Remhof, Applied Physics Letters (2007). date_created: 2019-03-26T10:26:08Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2786836 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Focused ion beam implantation induced site-selective growth of InAs quantum dots type: journal_article user_id: '42514' year: '2007' ... --- _id: '25986' abstract: - lang: eng text: "The authors report the synthesis of nanoporous ZnO, which exhibits a periodically ordered, uniform pore system with crystalline pore walls. The crystalline structure is investigated by x-ray diffraction, transmission electron microscopy, and selected area electron diffraction. The large specific surface area and the uniformity of the pore system are confirmed by nitrogen physisorption. Raman spectroscopy along with low-temperature photoluminescence measurements confirms the high degree of crystallinity and gives insight into defects participating in the radiative recombination processes.\r\nThe authors thank Günter Koch for recording the TEM images and Marie-Luise Wolff for valuable help in the laboratory one of the authors (M.T.) thanks Michael Fröba for the continuous support." article_number: '123108' article_type: original author: - first_name: T. full_name: Waitz, T. last_name: Waitz - first_name: Michael full_name: Tiemann, Michael id: '23547' last_name: Tiemann orcid: 0000-0003-1711-2722 - first_name: P. J. full_name: Klar, P. J. last_name: Klar - first_name: J. full_name: Sann, J. last_name: Sann - first_name: J. full_name: Stehr, J. last_name: Stehr - first_name: B. K. full_name: Meyer, B. K. last_name: Meyer citation: ama: Waitz T, Tiemann M, Klar PJ, Sann J, Stehr J, Meyer BK. Crystalline ZnO with an enhanced surface area obtained by nanocasting. Applied Physics Letters. Published online 2007. doi:10.1063/1.2713872 apa: Waitz, T., Tiemann, M., Klar, P. J., Sann, J., Stehr, J., & Meyer, B. K. (2007). Crystalline ZnO with an enhanced surface area obtained by nanocasting. Applied Physics Letters, Article 123108. https://doi.org/10.1063/1.2713872 bibtex: '@article{Waitz_Tiemann_Klar_Sann_Stehr_Meyer_2007, title={Crystalline ZnO with an enhanced surface area obtained by nanocasting}, DOI={10.1063/1.2713872}, number={123108}, journal={Applied Physics Letters}, author={Waitz, T. and Tiemann, Michael and Klar, P. J. and Sann, J. and Stehr, J. and Meyer, B. K.}, year={2007} }' chicago: Waitz, T., Michael Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer. “Crystalline ZnO with an Enhanced Surface Area Obtained by Nanocasting.” Applied Physics Letters, 2007. https://doi.org/10.1063/1.2713872. ieee: 'T. Waitz, M. Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer, “Crystalline ZnO with an enhanced surface area obtained by nanocasting,” Applied Physics Letters, Art. no. 123108, 2007, doi: 10.1063/1.2713872.' mla: Waitz, T., et al. “Crystalline ZnO with an Enhanced Surface Area Obtained by Nanocasting.” Applied Physics Letters, 123108, 2007, doi:10.1063/1.2713872. short: T. Waitz, M. Tiemann, P.J. Klar, J. Sann, J. Stehr, B.K. Meyer, Applied Physics Letters (2007). date_created: 2021-10-09T09:40:39Z date_updated: 2023-03-09T08:49:01Z department: - _id: '35' - _id: '2' - _id: '307' doi: 10.1063/1.2713872 extern: '1' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published quality_controlled: '1' status: public title: Crystalline ZnO with an enhanced surface area obtained by nanocasting type: journal_article user_id: '23547' year: '2007' ... --- _id: '39561' article_number: '013501' author: - first_name: M. full_name: Scharnberg, M. last_name: Scharnberg - first_name: V. full_name: Zaporojtchenko, V. last_name: Zaporojtchenko - first_name: R. full_name: Adelung, R. last_name: Adelung - first_name: F. full_name: Faupel, F. last_name: Faupel - first_name: C. full_name: Pannemann, C. last_name: Pannemann - first_name: T. full_name: Diekmann, T. last_name: Diekmann - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann citation: ama: Scharnberg M, Zaporojtchenko V, Adelung R, et al. Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. Applied Physics Letters. 2007;90(1). doi:10.1063/1.2426926 apa: Scharnberg, M., Zaporojtchenko, V., Adelung, R., Faupel, F., Pannemann, C., Diekmann, T., & Hilleringmann, U. (2007). Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. Applied Physics Letters, 90(1), Article 013501. https://doi.org/10.1063/1.2426926 bibtex: '@article{Scharnberg_Zaporojtchenko_Adelung_Faupel_Pannemann_Diekmann_Hilleringmann_2007, title={Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer}, volume={90}, DOI={10.1063/1.2426926}, number={1013501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Scharnberg, M. and Zaporojtchenko, V. and Adelung, R. and Faupel, F. and Pannemann, C. and Diekmann, T. and Hilleringmann, Ulrich}, year={2007} }' chicago: Scharnberg, M., V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T. Diekmann, and Ulrich Hilleringmann. “Tuning the Threshold Voltage of Organic Field-Effect Transistors by an Electret Encapsulating Layer.” Applied Physics Letters 90, no. 1 (2007). https://doi.org/10.1063/1.2426926. ieee: 'M. Scharnberg et al., “Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer,” Applied Physics Letters, vol. 90, no. 1, Art. no. 013501, 2007, doi: 10.1063/1.2426926.' mla: Scharnberg, M., et al. “Tuning the Threshold Voltage of Organic Field-Effect Transistors by an Electret Encapsulating Layer.” Applied Physics Letters, vol. 90, no. 1, 013501, AIP Publishing, 2007, doi:10.1063/1.2426926. short: M. Scharnberg, V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T. Diekmann, U. Hilleringmann, Applied Physics Letters 90 (2007). date_created: 2023-01-24T12:15:22Z date_updated: 2023-03-21T10:15:06Z department: - _id: '59' doi: 10.1063/1.2426926 intvolume: ' 90' issue: '1' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer type: journal_article user_id: '20179' volume: 90 year: '2007' ... --- _id: '7651' article_number: '031111' author: - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Kevin full_name: Hennessy, Kevin last_name: Hennessy - first_name: Elaine D. full_name: Haberer, Elaine D. last_name: Haberer - first_name: Rajat full_name: Sharma, Rajat last_name: Sharma - first_name: Yong-Seok full_name: Choi, Yong-Seok last_name: Choi - first_name: Kelly full_name: McGroddy, Kelly last_name: McGroddy - first_name: Stacia full_name: Keller, Stacia last_name: Keller - first_name: Steven P. full_name: DenBaars, Steven P. last_name: DenBaars - first_name: Shuji full_name: Nakamura, Shuji last_name: Nakamura - first_name: Evelyn L. full_name: Hu, Evelyn L. last_name: Hu citation: ama: Meier C, Hennessy K, Haberer ED, et al. Visible resonant modes in GaN-based photonic crystal membrane cavities. Applied Physics Letters. 2006;88(3). doi:10.1063/1.2166680 apa: Meier, C., Hennessy, K., Haberer, E. D., Sharma, R., Choi, Y.-S., McGroddy, K., … Hu, E. L. (2006). Visible resonant modes in GaN-based photonic crystal membrane cavities. Applied Physics Letters, 88(3). https://doi.org/10.1063/1.2166680 bibtex: '@article{Meier_Hennessy_Haberer_Sharma_Choi_McGroddy_Keller_DenBaars_Nakamura_Hu_2006, title={Visible resonant modes in GaN-based photonic crystal membrane cavities}, volume={88}, DOI={10.1063/1.2166680}, number={3031111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Meier, Cedrik and Hennessy, Kevin and Haberer, Elaine D. and Sharma, Rajat and Choi, Yong-Seok and McGroddy, Kelly and Keller, Stacia and DenBaars, Steven P. and Nakamura, Shuji and Hu, Evelyn L.}, year={2006} }' chicago: Meier, Cedrik, Kevin Hennessy, Elaine D. Haberer, Rajat Sharma, Yong-Seok Choi, Kelly McGroddy, Stacia Keller, Steven P. DenBaars, Shuji Nakamura, and Evelyn L. Hu. “Visible Resonant Modes in GaN-Based Photonic Crystal Membrane Cavities.” Applied Physics Letters 88, no. 3 (2006). https://doi.org/10.1063/1.2166680. ieee: C. Meier et al., “Visible resonant modes in GaN-based photonic crystal membrane cavities,” Applied Physics Letters, vol. 88, no. 3, 2006. mla: Meier, Cedrik, et al. “Visible Resonant Modes in GaN-Based Photonic Crystal Membrane Cavities.” Applied Physics Letters, vol. 88, no. 3, 031111, AIP Publishing, 2006, doi:10.1063/1.2166680. short: C. Meier, K. Hennessy, E.D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy, S. Keller, S.P. DenBaars, S. Nakamura, E.L. Hu, Applied Physics Letters 88 (2006). date_created: 2019-02-13T11:41:17Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2166680 extern: '1' intvolume: ' 88' issue: '3' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Visible resonant modes in GaN-based photonic crystal membrane cavities type: journal_article user_id: '20798' volume: 88 year: '2006' ... --- _id: '8648' article_number: '082110' author: - first_name: M. full_name: Knop, M. last_name: Knop - first_name: U. full_name: Wieser, U. last_name: Wieser - first_name: U. full_name: Kunze, U. last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Knop M, Wieser U, Kunze U, Reuter D, Wieck AD. Ballistic rectification in an asymmetric mesoscopic cross junction. Applied Physics Letters. 2006. doi:10.1063/1.2179618 apa: Knop, M., Wieser, U., Kunze, U., Reuter, D., & Wieck, A. D. (2006). Ballistic rectification in an asymmetric mesoscopic cross junction. Applied Physics Letters. https://doi.org/10.1063/1.2179618 bibtex: '@article{Knop_Wieser_Kunze_Reuter_Wieck_2006, title={Ballistic rectification in an asymmetric mesoscopic cross junction}, DOI={10.1063/1.2179618}, number={082110}, journal={Applied Physics Letters}, author={Knop, M. and Wieser, U. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2006} }' chicago: Knop, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Ballistic Rectification in an Asymmetric Mesoscopic Cross Junction.” Applied Physics Letters, 2006. https://doi.org/10.1063/1.2179618. ieee: M. Knop, U. Wieser, U. Kunze, D. Reuter, and A. D. Wieck, “Ballistic rectification in an asymmetric mesoscopic cross junction,” Applied Physics Letters, 2006. mla: Knop, M., et al. “Ballistic Rectification in an Asymmetric Mesoscopic Cross Junction.” Applied Physics Letters, 082110, 2006, doi:10.1063/1.2179618. short: M. Knop, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2006). date_created: 2019-03-27T07:54:36Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2179618 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Ballistic rectification in an asymmetric mesoscopic cross junction type: journal_article user_id: '42514' year: '2006' ... --- _id: '8654' article_number: '121115' author: - first_name: R. full_name: Schmidt, R. last_name: Schmidt - first_name: U. full_name: Scholz, U. last_name: Scholz - first_name: M. full_name: Vitzethum, M. last_name: Vitzethum - first_name: R. full_name: Fix, R. last_name: Fix - first_name: C. full_name: Metzner, C. last_name: Metzner - first_name: P. full_name: Kailuweit, P. last_name: Kailuweit - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. full_name: Wieck, A. last_name: Wieck - first_name: M. C. full_name: Hübner, M. C. last_name: Hübner - first_name: S. full_name: Stufler, S. last_name: Stufler - first_name: A. full_name: Zrenner, A. last_name: Zrenner - first_name: S. full_name: Malzer, S. last_name: Malzer - first_name: G. H. full_name: Döhler, G. H. last_name: Döhler citation: ama: Schmidt R, Scholz U, Vitzethum M, et al. Fabrication of genuine single-quantum-dot light-emitting diodes. Applied Physics Letters. 2006. doi:10.1063/1.2188057 apa: Schmidt, R., Scholz, U., Vitzethum, M., Fix, R., Metzner, C., Kailuweit, P., … Döhler, G. H. (2006). Fabrication of genuine single-quantum-dot light-emitting diodes. Applied Physics Letters. https://doi.org/10.1063/1.2188057 bibtex: '@article{Schmidt_Scholz_Vitzethum_Fix_Metzner_Kailuweit_Reuter_Wieck_Hübner_Stufler_et al._2006, title={Fabrication of genuine single-quantum-dot light-emitting diodes}, DOI={10.1063/1.2188057}, number={121115}, journal={Applied Physics Letters}, author={Schmidt, R. and Scholz, U. and Vitzethum, M. and Fix, R. and Metzner, C. and Kailuweit, P. and Reuter, Dirk and Wieck, A. and Hübner, M. C. and Stufler, S. and et al.}, year={2006} }' chicago: Schmidt, R., U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, Dirk Reuter, et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting Diodes.” Applied Physics Letters, 2006. https://doi.org/10.1063/1.2188057. ieee: R. Schmidt et al., “Fabrication of genuine single-quantum-dot light-emitting diodes,” Applied Physics Letters, 2006. mla: Schmidt, R., et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting Diodes.” Applied Physics Letters, 121115, 2006, doi:10.1063/1.2188057. short: R. Schmidt, U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, D. Reuter, A. Wieck, M.C. Hübner, S. Stufler, A. Zrenner, S. Malzer, G.H. Döhler, Applied Physics Letters (2006). date_created: 2019-03-27T08:21:39Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2188057 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Fabrication of genuine single-quantum-dot light-emitting diodes type: journal_article user_id: '42514' year: '2006' ...