---
_id: '39729'
article_number: '223301'
author:
- first_name: B.
full_name: Atorf, B.
last_name: Atorf
- first_name: A.
full_name: Hoischen, A.
last_name: Hoischen
- first_name: M. B.
full_name: Ros, M. B.
last_name: Ros
- first_name: N.
full_name: Gimeno, N.
last_name: Gimeno
- first_name: C.
full_name: Tschierske, C.
last_name: Tschierske
- first_name: G.
full_name: Dantlgraber, G.
last_name: Dantlgraber
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Atorf B, Hoischen A, Ros MB, et al. Switching performance of a polymer-stabilized
antiferroelectric liquid crystal based on bent-core molecules. Applied Physics
Letters. 2012;100(22). doi:10.1063/1.4722794
apa: Atorf, B., Hoischen, A., Ros, M. B., Gimeno, N., Tschierske, C., Dantlgraber,
G., & Kitzerow, H.-S. (2012). Switching performance of a polymer-stabilized
antiferroelectric liquid crystal based on bent-core molecules. Applied Physics
Letters, 100(22), Article 223301. https://doi.org/10.1063/1.4722794
bibtex: '@article{Atorf_Hoischen_Ros_Gimeno_Tschierske_Dantlgraber_Kitzerow_2012,
title={Switching performance of a polymer-stabilized antiferroelectric liquid
crystal based on bent-core molecules}, volume={100}, DOI={10.1063/1.4722794},
number={22223301}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Atorf, B. and Hoischen, A. and Ros, M. B. and Gimeno, N. and Tschierske,
C. and Dantlgraber, G. and Kitzerow, Heinz-Siegfried}, year={2012} }'
chicago: Atorf, B., A. Hoischen, M. B. Ros, N. Gimeno, C. Tschierske, G. Dantlgraber,
and Heinz-Siegfried Kitzerow. “Switching Performance of a Polymer-Stabilized Antiferroelectric
Liquid Crystal Based on Bent-Core Molecules.” Applied Physics Letters 100,
no. 22 (2012). https://doi.org/10.1063/1.4722794.
ieee: 'B. Atorf et al., “Switching performance of a polymer-stabilized antiferroelectric
liquid crystal based on bent-core molecules,” Applied Physics Letters,
vol. 100, no. 22, Art. no. 223301, 2012, doi: 10.1063/1.4722794.'
mla: Atorf, B., et al. “Switching Performance of a Polymer-Stabilized Antiferroelectric
Liquid Crystal Based on Bent-Core Molecules.” Applied Physics Letters,
vol. 100, no. 22, 223301, AIP Publishing, 2012, doi:10.1063/1.4722794.
short: B. Atorf, A. Hoischen, M.B. Ros, N. Gimeno, C. Tschierske, G. Dantlgraber,
H.-S. Kitzerow, Applied Physics Letters 100 (2012).
date_created: 2023-01-24T18:39:05Z
date_updated: 2023-01-24T18:39:34Z
department:
- _id: '313'
- _id: '230'
- _id: '638'
doi: 10.1063/1.4722794
intvolume: ' 100'
issue: '22'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Switching performance of a polymer-stabilized antiferroelectric liquid crystal
based on bent-core molecules
type: journal_article
user_id: '254'
volume: 100
year: '2012'
...
---
_id: '39728'
article_number: '051117'
author:
- first_name: Jürgen
full_name: Schmidtke, Jürgen
last_name: Schmidtke
- first_name: Gisela
full_name: Jünnemann, Gisela
last_name: Jünnemann
- first_name: Susanne
full_name: Keuker-Baumann, Susanne
last_name: Keuker-Baumann
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Schmidtke J, Jünnemann G, Keuker-Baumann S, Kitzerow H-S. Electrical fine tuning
of liquid crystal lasers. Applied Physics Letters. 2012;101(5). doi:10.1063/1.4739840
apa: Schmidtke, J., Jünnemann, G., Keuker-Baumann, S., & Kitzerow, H.-S. (2012).
Electrical fine tuning of liquid crystal lasers. Applied Physics Letters,
101(5), Article 051117. https://doi.org/10.1063/1.4739840
bibtex: '@article{Schmidtke_Jünnemann_Keuker-Baumann_Kitzerow_2012, title={Electrical
fine tuning of liquid crystal lasers}, volume={101}, DOI={10.1063/1.4739840},
number={5051117}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Schmidtke, Jürgen and Jünnemann, Gisela and Keuker-Baumann, Susanne and
Kitzerow, Heinz-Siegfried}, year={2012} }'
chicago: Schmidtke, Jürgen, Gisela Jünnemann, Susanne Keuker-Baumann, and Heinz-Siegfried
Kitzerow. “Electrical Fine Tuning of Liquid Crystal Lasers.” Applied Physics
Letters 101, no. 5 (2012). https://doi.org/10.1063/1.4739840.
ieee: 'J. Schmidtke, G. Jünnemann, S. Keuker-Baumann, and H.-S. Kitzerow, “Electrical
fine tuning of liquid crystal lasers,” Applied Physics Letters, vol. 101,
no. 5, Art. no. 051117, 2012, doi: 10.1063/1.4739840.'
mla: Schmidtke, Jürgen, et al. “Electrical Fine Tuning of Liquid Crystal Lasers.”
Applied Physics Letters, vol. 101, no. 5, 051117, AIP Publishing, 2012,
doi:10.1063/1.4739840.
short: J. Schmidtke, G. Jünnemann, S. Keuker-Baumann, H.-S. Kitzerow, Applied Physics
Letters 101 (2012).
date_created: 2023-01-24T18:38:22Z
date_updated: 2023-01-24T18:38:50Z
department:
- _id: '313'
- _id: '230'
- _id: '638'
doi: 10.1063/1.4739840
intvolume: ' 101'
issue: '5'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Electrical fine tuning of liquid crystal lasers
type: journal_article
user_id: '254'
volume: 101
year: '2012'
...
---
_id: '7697'
article_number: '223510'
author:
- first_name: B.
full_name: Marquardt, B.
last_name: Marquardt
- first_name: A.
full_name: Beckel, A.
last_name: Beckel
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: M.
full_name: Geller, M.
last_name: Geller
citation:
ama: 'Marquardt B, Beckel A, Lorke A, Wieck AD, Reuter D, Geller M. The influence
of charged InAs quantum dots on the conductance of a two-dimensional electron
gas: Mobility vs. carrier concentration. Applied Physics Letters. 2011;99(22).
doi:10.1063/1.3665070'
apa: 'Marquardt, B., Beckel, A., Lorke, A., Wieck, A. D., Reuter, D., & Geller,
M. (2011). The influence of charged InAs quantum dots on the conductance of a
two-dimensional electron gas: Mobility vs. carrier concentration. Applied Physics
Letters, 99(22). https://doi.org/10.1063/1.3665070'
bibtex: '@article{Marquardt_Beckel_Lorke_Wieck_Reuter_Geller_2011, title={The influence
of charged InAs quantum dots on the conductance of a two-dimensional electron
gas: Mobility vs. carrier concentration}, volume={99}, DOI={10.1063/1.3665070},
number={22223510}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Marquardt, B. and Beckel, A. and Lorke, A. and Wieck, A. D. and Reuter,
Dirk and Geller, M.}, year={2011} }'
chicago: 'Marquardt, B., A. Beckel, A. Lorke, A. D. Wieck, Dirk Reuter, and M. Geller.
“The Influence of Charged InAs Quantum Dots on the Conductance of a Two-Dimensional
Electron Gas: Mobility vs. Carrier Concentration.” Applied Physics Letters
99, no. 22 (2011). https://doi.org/10.1063/1.3665070.'
ieee: 'B. Marquardt, A. Beckel, A. Lorke, A. D. Wieck, D. Reuter, and M. Geller,
“The influence of charged InAs quantum dots on the conductance of a two-dimensional
electron gas: Mobility vs. carrier concentration,” Applied Physics Letters,
vol. 99, no. 22, 2011.'
mla: 'Marquardt, B., et al. “The Influence of Charged InAs Quantum Dots on the Conductance
of a Two-Dimensional Electron Gas: Mobility vs. Carrier Concentration.” Applied
Physics Letters, vol. 99, no. 22, 223510, AIP Publishing, 2011, doi:10.1063/1.3665070.'
short: B. Marquardt, A. Beckel, A. Lorke, A.D. Wieck, D. Reuter, M. Geller, Applied
Physics Letters 99 (2011).
date_created: 2019-02-14T09:41:25Z
date_updated: 2022-01-06T07:03:44Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3665070
intvolume: ' 99'
issue: '22'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: 'The influence of charged InAs quantum dots on the conductance of a two-dimensional
electron gas: Mobility vs. carrier concentration'
type: journal_article
user_id: '42514'
volume: 99
year: '2011'
...
---
_id: '7710'
article_number: '102111'
author:
- first_name: Sven S.
full_name: Buchholz, Sven S.
last_name: Buchholz
- first_name: Ulrich
full_name: Kunze, Ulrich
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Saskia F.
full_name: Fischer, Saskia F.
last_name: Fischer
citation:
ama: Buchholz SS, Kunze U, Reuter D, Wieck AD, Fischer SF. Mode-filtered electron
injection into a waveguide interferometer. Applied Physics Letters. 2011;98(10).
doi:10.1063/1.3563714
apa: Buchholz, S. S., Kunze, U., Reuter, D., Wieck, A. D., & Fischer, S. F.
(2011). Mode-filtered electron injection into a waveguide interferometer. Applied
Physics Letters, 98(10). https://doi.org/10.1063/1.3563714
bibtex: '@article{Buchholz_Kunze_Reuter_Wieck_Fischer_2011, title={Mode-filtered
electron injection into a waveguide interferometer}, volume={98}, DOI={10.1063/1.3563714},
number={10102111}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Buchholz, Sven S. and Kunze, Ulrich and Reuter, Dirk and Wieck, Andreas
D. and Fischer, Saskia F.}, year={2011} }'
chicago: Buchholz, Sven S., Ulrich Kunze, Dirk Reuter, Andreas D. Wieck, and Saskia
F. Fischer. “Mode-Filtered Electron Injection into a Waveguide Interferometer.”
Applied Physics Letters 98, no. 10 (2011). https://doi.org/10.1063/1.3563714.
ieee: S. S. Buchholz, U. Kunze, D. Reuter, A. D. Wieck, and S. F. Fischer, “Mode-filtered
electron injection into a waveguide interferometer,” Applied Physics Letters,
vol. 98, no. 10, 2011.
mla: Buchholz, Sven S., et al. “Mode-Filtered Electron Injection into a Waveguide
Interferometer.” Applied Physics Letters, vol. 98, no. 10, 102111, AIP
Publishing, 2011, doi:10.1063/1.3563714.
short: S.S. Buchholz, U. Kunze, D. Reuter, A.D. Wieck, S.F. Fischer, Applied Physics
Letters 98 (2011).
date_created: 2019-02-14T10:32:36Z
date_updated: 2022-01-06T07:03:45Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3563714
intvolume: ' 98'
issue: '10'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Mode-filtered electron injection into a waveguide interferometer
type: journal_article
user_id: '42514'
volume: 98
year: '2011'
...
---
_id: '7711'
article_number: '081911'
author:
- first_name: Y. S.
full_name: Chen, Y. S.
last_name: Chen
- first_name: J.
full_name: Huang, J.
last_name: Huang
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A.
full_name: Ludwig, A.
last_name: Ludwig
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: G.
full_name: Bacher, G.
last_name: Bacher
citation:
ama: Chen YS, Huang J, Reuter D, Ludwig A, Wieck AD, Bacher G. Optically detected
nuclear magnetic resonance in n-GaAs using an on-chip microcoil. Applied Physics
Letters. 2011;98(8). doi:10.1063/1.3553503
apa: Chen, Y. S., Huang, J., Reuter, D., Ludwig, A., Wieck, A. D., & Bacher,
G. (2011). Optically detected nuclear magnetic resonance in n-GaAs using an on-chip
microcoil. Applied Physics Letters, 98(8). https://doi.org/10.1063/1.3553503
bibtex: '@article{Chen_Huang_Reuter_Ludwig_Wieck_Bacher_2011, title={Optically detected
nuclear magnetic resonance in n-GaAs using an on-chip microcoil}, volume={98},
DOI={10.1063/1.3553503}, number={8081911},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chen, Y.
S. and Huang, J. and Reuter, Dirk and Ludwig, A. and Wieck, A. D. and Bacher,
G.}, year={2011} }'
chicago: Chen, Y. S., J. Huang, Dirk Reuter, A. Ludwig, A. D. Wieck, and G. Bacher.
“Optically Detected Nuclear Magnetic Resonance in N-GaAs Using an on-Chip Microcoil.”
Applied Physics Letters 98, no. 8 (2011). https://doi.org/10.1063/1.3553503.
ieee: Y. S. Chen, J. Huang, D. Reuter, A. Ludwig, A. D. Wieck, and G. Bacher, “Optically
detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil,” Applied
Physics Letters, vol. 98, no. 8, 2011.
mla: Chen, Y. S., et al. “Optically Detected Nuclear Magnetic Resonance in N-GaAs
Using an on-Chip Microcoil.” Applied Physics Letters, vol. 98, no. 8, 081911,
AIP Publishing, 2011, doi:10.1063/1.3553503.
short: Y.S. Chen, J. Huang, D. Reuter, A. Ludwig, A.D. Wieck, G. Bacher, Applied
Physics Letters 98 (2011).
date_created: 2019-02-14T10:33:23Z
date_updated: 2022-01-06T07:03:45Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3553503
intvolume: ' 98'
issue: '8'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil
type: journal_article
user_id: '42514'
volume: 98
year: '2011'
...
---
_id: '7311'
article_number: '051102'
author:
- first_name: Henning
full_name: Soldat, Henning
last_name: Soldat
- first_name: Mingyuan
full_name: Li, Mingyuan
last_name: Li
- first_name: Nils C.
full_name: Gerhardt, Nils C.
last_name: Gerhardt
- first_name: Martin R.
full_name: Hofmann, Martin R.
last_name: Hofmann
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Astrid
full_name: Ebbing, Astrid
last_name: Ebbing
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Frank
full_name: Stromberg, Frank
last_name: Stromberg
- first_name: Werner
full_name: Keune, Werner
last_name: Keune
- first_name: Heiko
full_name: Wende, Heiko
last_name: Wende
citation:
ama: Soldat H, Li M, Gerhardt NC, et al. Room temperature spin relaxation length
in spin light-emitting diodes. Applied Physics Letters. 2011;99(5). doi:10.1063/1.3622662
apa: Soldat, H., Li, M., Gerhardt, N. C., Hofmann, M. R., Ludwig, A., Ebbing, A.,
… Wende, H. (2011). Room temperature spin relaxation length in spin light-emitting
diodes. Applied Physics Letters, 99(5). https://doi.org/10.1063/1.3622662
bibtex: '@article{Soldat_Li_Gerhardt_Hofmann_Ludwig_Ebbing_Reuter_Wieck_Stromberg_Keune_et
al._2011, title={Room temperature spin relaxation length in spin light-emitting
diodes}, volume={99}, DOI={10.1063/1.3622662},
number={5051102}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Soldat, Henning and Li, Mingyuan and Gerhardt, Nils C. and Hofmann, Martin
R. and Ludwig, Arne and Ebbing, Astrid and Reuter, Dirk and Wieck, Andreas D.
and Stromberg, Frank and Keune, Werner and et al.}, year={2011} }'
chicago: Soldat, Henning, Mingyuan Li, Nils C. Gerhardt, Martin R. Hofmann, Arne
Ludwig, Astrid Ebbing, Dirk Reuter, et al. “Room Temperature Spin Relaxation Length
in Spin Light-Emitting Diodes.” Applied Physics Letters 99, no. 5 (2011).
https://doi.org/10.1063/1.3622662.
ieee: H. Soldat et al., “Room temperature spin relaxation length in spin
light-emitting diodes,” Applied Physics Letters, vol. 99, no. 5, 2011.
mla: Soldat, Henning, et al. “Room Temperature Spin Relaxation Length in Spin Light-Emitting
Diodes.” Applied Physics Letters, vol. 99, no. 5, 051102, AIP Publishing,
2011, doi:10.1063/1.3622662.
short: H. Soldat, M. Li, N.C. Gerhardt, M.R. Hofmann, A. Ludwig, A. Ebbing, D. Reuter,
A.D. Wieck, F. Stromberg, W. Keune, H. Wende, Applied Physics Letters 99 (2011).
date_created: 2019-01-31T10:21:25Z
date_updated: 2022-01-06T07:03:34Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3622662
intvolume: ' 99'
issue: '5'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Room temperature spin relaxation length in spin light-emitting diodes
type: journal_article
user_id: '42514'
volume: 99
year: '2011'
...
---
_id: '39735'
article_number: '241106'
author:
- first_name: Alexander
full_name: Lorenz, Alexander
last_name: Lorenz
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Lorenz A, Kitzerow H-S. Efficient electro-optic switching in a photonic liquid
crystal fiber. Applied Physics Letters. 2011;98(24). doi:10.1063/1.3599848
apa: Lorenz, A., & Kitzerow, H.-S. (2011). Efficient electro-optic switching
in a photonic liquid crystal fiber. Applied Physics Letters, 98(24),
Article 241106. https://doi.org/10.1063/1.3599848
bibtex: '@article{Lorenz_Kitzerow_2011, title={Efficient electro-optic switching
in a photonic liquid crystal fiber}, volume={98}, DOI={10.1063/1.3599848},
number={24241106}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Lorenz, Alexander and Kitzerow, Heinz-Siegfried}, year={2011} }'
chicago: Lorenz, Alexander, and Heinz-Siegfried Kitzerow. “Efficient Electro-Optic
Switching in a Photonic Liquid Crystal Fiber.” Applied Physics Letters
98, no. 24 (2011). https://doi.org/10.1063/1.3599848.
ieee: 'A. Lorenz and H.-S. Kitzerow, “Efficient electro-optic switching in a photonic
liquid crystal fiber,” Applied Physics Letters, vol. 98, no. 24, Art. no.
241106, 2011, doi: 10.1063/1.3599848.'
mla: Lorenz, Alexander, and Heinz-Siegfried Kitzerow. “Efficient Electro-Optic Switching
in a Photonic Liquid Crystal Fiber.” Applied Physics Letters, vol. 98,
no. 24, 241106, AIP Publishing, 2011, doi:10.1063/1.3599848.
short: A. Lorenz, H.-S. Kitzerow, Applied Physics Letters 98 (2011).
date_created: 2023-01-24T18:42:25Z
date_updated: 2023-01-24T18:42:50Z
department:
- _id: '313'
- _id: '230'
- _id: '638'
doi: 10.1063/1.3599848
intvolume: ' 98'
issue: '24'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Efficient electro-optic switching in a photonic liquid crystal fiber
type: journal_article
user_id: '254'
volume: 98
year: '2011'
...
---
_id: '59692'
abstract:
- lang: eng
text: We report spin-induced polarization oscillations in vertical-cavity
surface-emitting lasers above threshold and at room temperature. The oscillation
frequency is 11.6 GHz, which is significantly higher than the modulation bandwidth
of less than 4 GHz in the device. The oscillation frequency is determined by an
additional resonance frequency in birefringence containing microcavities, which
is potentially much higher than the conventional relaxation oscillation frequency.
The damping of the oscillations can be controlled by the current, allowing for
oscillation lifetimes much longer than the spin lifetime in the device as well
as for short bursts potentially interesting for information transmission.
author:
- first_name: N. C.
full_name: Gerhardt, N. C.
last_name: Gerhardt
- first_name: M. Y.
full_name: Li, M. Y.
last_name: Li
- first_name: H.
full_name: Jähme, H.
last_name: Jähme
- first_name: H.
full_name: Höpfner, H.
last_name: Höpfner
- first_name: T.
full_name: Ackemann, T.
last_name: Ackemann
- first_name: M. R.
full_name: Hofmann, M. R.
last_name: Hofmann
citation:
ama: Gerhardt NC, Li MY, Jähme H, Höpfner H, Ackemann T, Hofmann MR. Ultrafast spin-induced
polarization oscillations with tunable lifetime in vertical-cavity surface-emitting
lasers. Applied Physics Letters. 2011;99(15). doi:10.1063/1.3651339
apa: Gerhardt, N. C., Li, M. Y., Jähme, H., Höpfner, H., Ackemann, T., & Hofmann,
M. R. (2011). Ultrafast spin-induced polarization oscillations with tunable lifetime
in vertical-cavity surface-emitting lasers. Applied Physics Letters, 99(15).
https://doi.org/10.1063/1.3651339
bibtex: '@article{Gerhardt_Li_Jähme_Höpfner_Ackemann_Hofmann_2011, title={Ultrafast
spin-induced polarization oscillations with tunable lifetime in vertical-cavity
surface-emitting lasers}, volume={99}, DOI={10.1063/1.3651339},
number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Gerhardt,
N. C. and Li, M. Y. and Jähme, H. and Höpfner, H. and Ackemann, T. and Hofmann,
M. R.}, year={2011} }'
chicago: Gerhardt, N. C., M. Y. Li, H. Jähme, H. Höpfner, T. Ackemann, and M. R.
Hofmann. “Ultrafast Spin-Induced Polarization Oscillations with Tunable Lifetime
in Vertical-Cavity Surface-Emitting Lasers.” Applied Physics Letters 99,
no. 15 (2011). https://doi.org/10.1063/1.3651339.
ieee: 'N. C. Gerhardt, M. Y. Li, H. Jähme, H. Höpfner, T. Ackemann, and M. R. Hofmann,
“Ultrafast spin-induced polarization oscillations with tunable lifetime in vertical-cavity
surface-emitting lasers,” Applied Physics Letters, vol. 99, no. 15, 2011,
doi: 10.1063/1.3651339.'
mla: Gerhardt, N. C., et al. “Ultrafast Spin-Induced Polarization Oscillations with
Tunable Lifetime in Vertical-Cavity Surface-Emitting Lasers.” Applied Physics
Letters, vol. 99, no. 15, AIP Publishing, 2011, doi:10.1063/1.3651339.
short: N.C. Gerhardt, M.Y. Li, H. Jähme, H. Höpfner, T. Ackemann, M.R. Hofmann,
Applied Physics Letters 99 (2011).
date_created: 2025-04-25T10:19:38Z
date_updated: 2026-02-25T14:01:28Z
department:
- _id: '977'
doi: 10.1063/1.3651339
intvolume: ' 99'
issue: '15'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Ultrafast spin-induced polarization oscillations with tunable lifetime in vertical-cavity
surface-emitting lasers
type: journal_article
user_id: '15911'
volume: 99
year: '2011'
...
---
_id: '7975'
article_number: '033111'
author:
- first_name: W.
full_name: Lei, W.
last_name: Lei
- first_name: C.
full_name: Notthoff, C.
last_name: Notthoff
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Lei W, Notthoff C, Lorke A, Reuter D, Wieck AD. Electronic structure of self-assembled
InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied
Physics Letters. 2010;96(3). doi:10.1063/1.3293445
apa: Lei, W., Notthoff, C., Lorke, A., Reuter, D., & Wieck, A. D. (2010). Electronic
structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage
spectroscopy. Applied Physics Letters, 96(3). https://doi.org/10.1063/1.3293445
bibtex: '@article{Lei_Notthoff_Lorke_Reuter_Wieck_2010, title={Electronic structure
of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy},
volume={96}, DOI={10.1063/1.3293445},
number={3033111}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Lei, W. and Notthoff, C. and Lorke, A. and Reuter, Dirk and Wieck, A.
D.}, year={2010} }'
chicago: Lei, W., C. Notthoff, A. Lorke, Dirk Reuter, and A. D. Wieck. “Electronic
Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage
Spectroscopy.” Applied Physics Letters 96, no. 3 (2010). https://doi.org/10.1063/1.3293445.
ieee: W. Lei, C. Notthoff, A. Lorke, D. Reuter, and A. D. Wieck, “Electronic structure
of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy,”
Applied Physics Letters, vol. 96, no. 3, 2010.
mla: Lei, W., et al. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum
Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters,
vol. 96, no. 3, 033111, AIP Publishing, 2010, doi:10.1063/1.3293445.
short: W. Lei, C. Notthoff, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters
96 (2010).
date_created: 2019-02-21T13:32:39Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3293445
intvolume: ' 96'
issue: '3'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by
capacitance-voltage spectroscopy
type: journal_article
user_id: '42514'
volume: 96
year: '2010'
...
---
_id: '7980'
article_number: '033111'
author:
- first_name: W.
full_name: Lei, W.
last_name: Lei
- first_name: C.
full_name: Notthoff, C.
last_name: Notthoff
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Lei W, Notthoff C, Lorke A, Reuter D, Wieck AD. Electronic structure of self-assembled
InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied
Physics Letters. 2010;96(3). doi:10.1063/1.3293445
apa: Lei, W., Notthoff, C., Lorke, A., Reuter, D., & Wieck, A. D. (2010). Electronic
structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage
spectroscopy. Applied Physics Letters, 96(3). https://doi.org/10.1063/1.3293445
bibtex: '@article{Lei_Notthoff_Lorke_Reuter_Wieck_2010, title={Electronic structure
of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy},
volume={96}, DOI={10.1063/1.3293445},
number={3033111}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Lei, W. and Notthoff, C. and Lorke, A. and Reuter, Dirk and Wieck, A.
D.}, year={2010} }'
chicago: Lei, W., C. Notthoff, A. Lorke, Dirk Reuter, and A. D. Wieck. “Electronic
Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage
Spectroscopy.” Applied Physics Letters 96, no. 3 (2010). https://doi.org/10.1063/1.3293445.
ieee: W. Lei, C. Notthoff, A. Lorke, D. Reuter, and A. D. Wieck, “Electronic structure
of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy,”
Applied Physics Letters, vol. 96, no. 3, 2010.
mla: Lei, W., et al. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum
Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters,
vol. 96, no. 3, 033111, AIP Publishing, 2010, doi:10.1063/1.3293445.
short: W. Lei, C. Notthoff, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters
96 (2010).
date_created: 2019-02-21T14:13:43Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3293445
intvolume: ' 96'
issue: '3'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by
capacitance-voltage spectroscopy
type: journal_article
user_id: '42514'
volume: 96
year: '2010'
...
---
_id: '7982'
article_number: '022110'
author:
- first_name: M.
full_name: Csontos, M.
last_name: Csontos
- first_name: Y.
full_name: Komijani, Y.
last_name: Komijani
- first_name: I.
full_name: Shorubalko, I.
last_name: Shorubalko
- first_name: K.
full_name: Ensslin, K.
last_name: Ensslin
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Csontos M, Komijani Y, Shorubalko I, Ensslin K, Reuter D, Wieck AD. Nanostructures
in p-GaAs with improved tunability. Applied Physics Letters. 2010;97(2).
doi:10.1063/1.3463465
apa: Csontos, M., Komijani, Y., Shorubalko, I., Ensslin, K., Reuter, D., & Wieck,
A. D. (2010). Nanostructures in p-GaAs with improved tunability. Applied Physics
Letters, 97(2). https://doi.org/10.1063/1.3463465
bibtex: '@article{Csontos_Komijani_Shorubalko_Ensslin_Reuter_Wieck_2010, title={Nanostructures
in p-GaAs with improved tunability}, volume={97}, DOI={10.1063/1.3463465},
number={2022110}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Csontos, M. and Komijani, Y. and Shorubalko, I. and Ensslin, K. and Reuter,
Dirk and Wieck, A. D.}, year={2010} }'
chicago: Csontos, M., Y. Komijani, I. Shorubalko, K. Ensslin, Dirk Reuter, and A.
D. Wieck. “Nanostructures in P-GaAs with Improved Tunability.” Applied Physics
Letters 97, no. 2 (2010). https://doi.org/10.1063/1.3463465.
ieee: M. Csontos, Y. Komijani, I. Shorubalko, K. Ensslin, D. Reuter, and A. D. Wieck,
“Nanostructures in p-GaAs with improved tunability,” Applied Physics Letters,
vol. 97, no. 2, 2010.
mla: Csontos, M., et al. “Nanostructures in P-GaAs with Improved Tunability.” Applied
Physics Letters, vol. 97, no. 2, 022110, AIP Publishing, 2010, doi:10.1063/1.3463465.
short: M. Csontos, Y. Komijani, I. Shorubalko, K. Ensslin, D. Reuter, A.D. Wieck,
Applied Physics Letters 97 (2010).
date_created: 2019-02-21T14:33:40Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3463465
intvolume: ' 97'
issue: '2'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Nanostructures in p-GaAs with improved tunability
type: journal_article
user_id: '42514'
volume: 97
year: '2010'
...
---
_id: '7983'
article_number: '062112'
author:
- first_name: M.
full_name: Wiemann, M.
last_name: Wiemann
- first_name: U.
full_name: Wieser, U.
last_name: Wieser
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Wiemann M, Wieser U, Kunze U, Reuter D, Wieck AD. Full-wave rectification based
upon hot-electron thermopower. Applied Physics Letters. 2010;97(6). doi:10.1063/1.3475922
apa: Wiemann, M., Wieser, U., Kunze, U., Reuter, D., & Wieck, A. D. (2010).
Full-wave rectification based upon hot-electron thermopower. Applied Physics
Letters, 97(6). https://doi.org/10.1063/1.3475922
bibtex: '@article{Wiemann_Wieser_Kunze_Reuter_Wieck_2010, title={Full-wave rectification
based upon hot-electron thermopower}, volume={97}, DOI={10.1063/1.3475922},
number={6062112}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Wiemann, M. and Wieser, U. and Kunze, U. and Reuter, Dirk and Wieck, A.
D.}, year={2010} }'
chicago: Wiemann, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Full-Wave
Rectification Based upon Hot-Electron Thermopower.” Applied Physics Letters
97, no. 6 (2010). https://doi.org/10.1063/1.3475922.
ieee: M. Wiemann, U. Wieser, U. Kunze, D. Reuter, and A. D. Wieck, “Full-wave rectification
based upon hot-electron thermopower,” Applied Physics Letters, vol. 97,
no. 6, 2010.
mla: Wiemann, M., et al. “Full-Wave Rectification Based upon Hot-Electron Thermopower.”
Applied Physics Letters, vol. 97, no. 6, 062112, AIP Publishing, 2010,
doi:10.1063/1.3475922.
short: M. Wiemann, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters
97 (2010).
date_created: 2019-02-21T14:34:50Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3475922
intvolume: ' 97'
issue: '6'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Full-wave rectification based upon hot-electron thermopower
type: journal_article
user_id: '42514'
volume: 97
year: '2010'
...
---
_id: '7990'
article_number: '143101'
author:
- first_name: M.
full_name: Mehta, M.
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: S.
full_name: Michaelis de Vasconcellos, S.
last_name: Michaelis de Vasconcellos
- first_name: A.
full_name: Zrenner, A.
last_name: Zrenner
- first_name: C.
full_name: Meier, C.
last_name: Meier
citation:
ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier
C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812
apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner,
A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot
in a micron sized light emitting diode. Applied Physics Letters, 97(14).
https://doi.org/10.1063/1.3488812
bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010,
title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light
emitting diode}, volume={97}, DOI={10.1063/1.3488812},
number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos,
S. and Zrenner, A. and Meier, C.}, year={2010} }'
chicago: Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized
Light Emitting Diode.” Applied Physics Letters 97, no. 14 (2010). https://doi.org/10.1063/1.3488812.
ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized
light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010.
mla: Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron
Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14,
143101, AIP Publishing, 2010, doi:10.1063/1.3488812.
short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
C. Meier, Applied Physics Letters 97 (2010).
date_created: 2019-02-21T14:41:19Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3488812
intvolume: ' 97'
issue: '14'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode
type: journal_article
user_id: '42514'
volume: 97
year: '2010'
...
---
_id: '4550'
abstract:
- lang: eng
text: We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled
molecular beam epitaxial growth into the intrinsic region of a p-i-n junction
diode. This is achieved using an in situ combination of focused ion beam prepatterning,
annealing, and overgrowth, resulting in arrays of individually electrically addressable
(In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence
spectroscopy we demonstrate that these QDs have the same optical quality as optically
pumped Stranski–Krastanov QDs with random nucleation located in proximity to a
doped interface. The results suggest that this technique is scalable and highly
interesting for different applications in quantum devices.
article_number: '143101'
article_type: original
author:
- first_name: M.
full_name: Mehta, M.
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: S.
full_name: Michaelis de Vasconcellos, S.
last_name: Michaelis de Vasconcellos
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier
C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812
apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner,
A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot
in a micron sized light emitting diode. Applied Physics Letters, 97(14).
https://doi.org/10.1063/1.3488812
bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010,
title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light
emitting diode}, volume={97}, DOI={10.1063/1.3488812},
number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos,
S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }'
chicago: Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur
Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot
in a Micron Sized Light Emitting Diode.” Applied Physics Letters 97, no.
14 (2010). https://doi.org/10.1063/1.3488812.
ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized
light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010.
mla: Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron
Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14,
143101, AIP Publishing, 2010, doi:10.1063/1.3488812.
short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
C. Meier, Applied Physics Letters 97 (2010).
date_created: 2018-09-20T12:38:51Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1063/1.3488812
intvolume: ' 97'
issue: '14'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode
type: journal_article
user_id: '20798'
volume: 97
year: '2010'
...
---
_id: '4194'
abstract:
- lang: eng
text: A heterojunction field-effect transistor (HFET) was fabricated of nonpolar
cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy.
The device shows a clear field effect at positive bias voltages with V_th=0.6
V. The HFET output characteristics were calculated using ATLAS simulation program.
The electron channel at the cubic AlGaN/GaN interface was detected by room temperature
capacitance-voltage measurements.
article_number: '253501'
article_type: original
author:
- first_name: E.
full_name: Tschumak, E.
last_name: Tschumak
- first_name: R.
full_name: Granzner, R.
last_name: Granzner
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: F.
full_name: Schwierz, F.
last_name: Schwierz
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: H.
full_name: Nagasawa, H.
last_name: Nagasawa
- first_name: M.
full_name: Abe, M.
last_name: Abe
- first_name: Donald
full_name: As, Donald
last_name: As
citation:
ama: Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction
field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters.
2010;96(25). doi:10.1063/1.3455066
apa: Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa,
H., … As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor
on Ar+ implanted 3C–SiC (001). Applied Physics Letters, 96(25).
https://doi.org/10.1063/1.3455066
bibtex: '@article{Tschumak_Granzner_Lindner_Schwierz_Lischka_Nagasawa_Abe_As_2010,
title={Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+
implanted 3C–SiC (001)}, volume={96}, DOI={10.1063/1.3455066},
number={25253501}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka,
K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2010} }'
chicago: Tschumak, E., R. Granzner, Jörg Lindner, F. Schwierz, K. Lischka, H. Nagasawa,
M. Abe, and Donald As. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor
on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters 96, no. 25 (2010).
https://doi.org/10.1063/1.3455066.
ieee: E. Tschumak et al., “Nonpolar cubic AlGaN/GaN heterojunction field-effect
transistor on Ar+ implanted 3C–SiC (001),” Applied Physics Letters, vol.
96, no. 25, 2010.
mla: Tschumak, E., et al. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect
Transistor on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters, vol.
96, no. 25, 253501, AIP Publishing, 2010, doi:10.1063/1.3455066.
short: E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa,
M. Abe, D. As, Applied Physics Letters 96 (2010).
date_created: 2018-08-28T11:56:08Z
date_updated: 2022-01-06T07:00:33Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1063/1.3455066
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T11:58:27Z
date_updated: 2018-08-28T11:58:27Z
file_id: '4195'
file_name: Non-polar cubic AlGaN-GaN HFET on Ar+ implanted 3C-SiC 001.pdf
file_size: 277385
relation: main_file
success: 1
file_date_updated: 2018-08-28T11:58:27Z
has_accepted_license: '1'
intvolume: ' 96'
issue: '25'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted
3C–SiC (001)
type: journal_article
user_id: '55706'
volume: 96
year: '2010'
...
---
_id: '7973'
article_number: '022107'
author:
- first_name: S. S.
full_name: Buchholz, S. S.
last_name: Buchholz
- first_name: S. F.
full_name: Fischer, S. F.
last_name: Fischer
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Buchholz SS, Fischer SF, Kunze U, Reuter D, Wieck AD. Nonlocal Aharonov–Bohm
conductance oscillations in an asymmetric quantum ring. Applied Physics Letters.
2009;94(2). doi:10.1063/1.3069281
apa: Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., & Wieck, A. D.
(2009). Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum
ring. Applied Physics Letters, 94(2). https://doi.org/10.1063/1.3069281
bibtex: '@article{Buchholz_Fischer_Kunze_Reuter_Wieck_2009, title={Nonlocal Aharonov–Bohm
conductance oscillations in an asymmetric quantum ring}, volume={94}, DOI={10.1063/1.3069281}, number={2022107},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Buchholz,
S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2009}
}'
chicago: Buchholz, S. S., S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck.
“Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.”
Applied Physics Letters 94, no. 2 (2009). https://doi.org/10.1063/1.3069281.
ieee: S. S. Buchholz, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Nonlocal
Aharonov–Bohm conductance oscillations in an asymmetric quantum ring,” Applied
Physics Letters, vol. 94, no. 2, 2009.
mla: Buchholz, S. S., et al. “Nonlocal Aharonov–Bohm Conductance Oscillations in
an Asymmetric Quantum Ring.” Applied Physics Letters, vol. 94, no. 2, 022107,
AIP Publishing, 2009, doi:10.1063/1.3069281.
short: S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics
Letters 94 (2009).
date_created: 2019-02-21T13:28:29Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3069281
intvolume: ' 94'
issue: '2'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring
type: journal_article
user_id: '42514'
volume: 94
year: '2009'
...
---
_id: '8579'
article_number: '022107'
author:
- first_name: S. S.
full_name: Buchholz, S. S.
last_name: Buchholz
- first_name: S. F.
full_name: Fischer, S. F.
last_name: Fischer
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Buchholz SS, Fischer SF, Kunze U, Reuter D, Wieck AD. Nonlocal Aharonov–Bohm
conductance oscillations in an asymmetric quantum ring. Applied Physics Letters.
2009. doi:10.1063/1.3069281
apa: Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., & Wieck, A. D.
(2009). Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum
ring. Applied Physics Letters. https://doi.org/10.1063/1.3069281
bibtex: '@article{Buchholz_Fischer_Kunze_Reuter_Wieck_2009, title={Nonlocal Aharonov–Bohm
conductance oscillations in an asymmetric quantum ring}, DOI={10.1063/1.3069281},
number={022107}, journal={Applied Physics Letters}, author={Buchholz, S. S. and
Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2009} }'
chicago: Buchholz, S. S., S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck.
“Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.”
Applied Physics Letters, 2009. https://doi.org/10.1063/1.3069281.
ieee: S. S. Buchholz, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Nonlocal
Aharonov–Bohm conductance oscillations in an asymmetric quantum ring,” Applied
Physics Letters, 2009.
mla: Buchholz, S. S., et al. “Nonlocal Aharonov–Bohm Conductance Oscillations in
an Asymmetric Quantum Ring.” Applied Physics Letters, 022107, 2009, doi:10.1063/1.3069281.
short: S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics
Letters (2009).
date_created: 2019-03-26T08:34:37Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3069281
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '8580'
article_number: '023107'
author:
- first_name: J. H.
full_name: Blokland, J. H.
last_name: Blokland
- first_name: M.
full_name: Bozkurt, M.
last_name: Bozkurt
- first_name: J. M.
full_name: Ulloa, J. M.
last_name: Ulloa
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: P. M.
full_name: Koenraad, P. M.
last_name: Koenraad
- first_name: P. C. M.
full_name: Christianen, P. C. M.
last_name: Christianen
- first_name: J. C.
full_name: Maan, J. C.
last_name: Maan
citation:
ama: Blokland JH, Bozkurt M, Ulloa JM, et al. Ellipsoidal InAs quantum dots observed
by cross-sectional scanning tunneling microscopy. Applied Physics Letters.
2009. doi:10.1063/1.3072366
apa: Blokland, J. H., Bozkurt, M., Ulloa, J. M., Reuter, D., Wieck, A. D., Koenraad,
P. M., … Maan, J. C. (2009). Ellipsoidal InAs quantum dots observed by cross-sectional
scanning tunneling microscopy. Applied Physics Letters. https://doi.org/10.1063/1.3072366
bibtex: '@article{Blokland_Bozkurt_Ulloa_Reuter_Wieck_Koenraad_Christianen_Maan_2009,
title={Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling
microscopy}, DOI={10.1063/1.3072366},
number={023107}, journal={Applied Physics Letters}, author={Blokland, J. H. and
Bozkurt, M. and Ulloa, J. M. and Reuter, Dirk and Wieck, A. D. and Koenraad, P.
M. and Christianen, P. C. M. and Maan, J. C.}, year={2009} }'
chicago: Blokland, J. H., M. Bozkurt, J. M. Ulloa, Dirk Reuter, A. D. Wieck, P.
M. Koenraad, P. C. M. Christianen, and J. C. Maan. “Ellipsoidal InAs Quantum Dots
Observed by Cross-Sectional Scanning Tunneling Microscopy.” Applied Physics
Letters, 2009. https://doi.org/10.1063/1.3072366.
ieee: J. H. Blokland et al., “Ellipsoidal InAs quantum dots observed by cross-sectional
scanning tunneling microscopy,” Applied Physics Letters, 2009.
mla: Blokland, J. H., et al. “Ellipsoidal InAs Quantum Dots Observed by Cross-Sectional
Scanning Tunneling Microscopy.” Applied Physics Letters, 023107, 2009,
doi:10.1063/1.3072366.
short: J.H. Blokland, M. Bozkurt, J.M. Ulloa, D. Reuter, A.D. Wieck, P.M. Koenraad,
P.C.M. Christianen, J.C. Maan, Applied Physics Letters (2009).
date_created: 2019-03-26T08:42:07Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3072366
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling
microscopy
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '8585'
article_number: '022113'
author:
- first_name: B.
full_name: Marquardt, B.
last_name: Marquardt
- first_name: M.
full_name: Geller, M.
last_name: Geller
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Marquardt B, Geller M, Lorke A, Reuter D, Wieck AD. Using a two-dimensional
electron gas to study nonequilibrium tunneling dynamics and charge storage in
self-assembled quantum dots. Applied Physics Letters. 2009. doi:10.1063/1.3175724
apa: Marquardt, B., Geller, M., Lorke, A., Reuter, D., & Wieck, A. D. (2009).
Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics
and charge storage in self-assembled quantum dots. Applied Physics Letters.
https://doi.org/10.1063/1.3175724
bibtex: '@article{Marquardt_Geller_Lorke_Reuter_Wieck_2009, title={Using a two-dimensional
electron gas to study nonequilibrium tunneling dynamics and charge storage in
self-assembled quantum dots}, DOI={10.1063/1.3175724},
number={022113}, journal={Applied Physics Letters}, author={Marquardt, B. and
Geller, M. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2009} }'
chicago: Marquardt, B., M. Geller, A. Lorke, Dirk Reuter, and A. D. Wieck. “Using
a Two-Dimensional Electron Gas to Study Nonequilibrium Tunneling Dynamics and
Charge Storage in Self-Assembled Quantum Dots.” Applied Physics Letters,
2009. https://doi.org/10.1063/1.3175724.
ieee: B. Marquardt, M. Geller, A. Lorke, D. Reuter, and A. D. Wieck, “Using a two-dimensional
electron gas to study nonequilibrium tunneling dynamics and charge storage in
self-assembled quantum dots,” Applied Physics Letters, 2009.
mla: Marquardt, B., et al. “Using a Two-Dimensional Electron Gas to Study Nonequilibrium
Tunneling Dynamics and Charge Storage in Self-Assembled Quantum Dots.” Applied
Physics Letters, 022113, 2009, doi:10.1063/1.3175724.
short: B. Marquardt, M. Geller, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics
Letters (2009).
date_created: 2019-03-26T08:55:40Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3175724
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics
and charge storage in self-assembled quantum dots
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '18632'
abstract:
- lang: eng
text: "We present measurements of the effective electron mass in biaxial tensile
strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained
SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI
and SOI were fabricated and Shubnikov–de Haas oscillations in the temperature
range of T=0.4–4 K for magnetic fields of B=0–10 T were measured. The effective
electron mass in SSOI and SOI samples was determined as mt=(0.20±0.01)m0. This
result is in excellent agreement with first-principles calculations of the\r\neffective
electron mass in the presence of strain."
article_number: '182101'
article_type: original
author:
- first_name: Sebastian F.
full_name: Feste, Sebastian F.
last_name: Feste
- first_name: Thomas
full_name: Schäpers, Thomas
last_name: Schäpers
- first_name: Dan
full_name: Buca, Dan
last_name: Buca
- first_name: Qing Tai
full_name: Zhao, Qing Tai
last_name: Zhao
- first_name: Joachim
full_name: Knoch, Joachim
last_name: Knoch
- first_name: Mohammed
full_name: Bouhassoune, Mohammed
last_name: Bouhassoune
- first_name: Arno
full_name: Schindlmayr, Arno
id: '458'
last_name: Schindlmayr
orcid: 0000-0002-4855-071X
- first_name: Siegfried
full_name: Mantl, Siegfried
last_name: Mantl
citation:
ama: Feste SF, Schäpers T, Buca D, et al. Measurement of effective electron mass
in biaxial tensile strained silicon on insulator. Applied Physics Letters.
2009;95(18). doi:10.1063/1.3254330
apa: Feste, S. F., Schäpers, T., Buca, D., Zhao, Q. T., Knoch, J., Bouhassoune,
M., Schindlmayr, A., & Mantl, S. (2009). Measurement of effective electron
mass in biaxial tensile strained silicon on insulator. Applied Physics Letters,
95(18), Article 182101. https://doi.org/10.1063/1.3254330
bibtex: '@article{Feste_Schäpers_Buca_Zhao_Knoch_Bouhassoune_Schindlmayr_Mantl_2009,
title={Measurement of effective electron mass in biaxial tensile strained silicon
on insulator}, volume={95}, DOI={10.1063/1.3254330},
number={18182101}, journal={Applied Physics Letters}, publisher={American Institute
of Physics}, author={Feste, Sebastian F. and Schäpers, Thomas and Buca, Dan and
Zhao, Qing Tai and Knoch, Joachim and Bouhassoune, Mohammed and Schindlmayr, Arno
and Mantl, Siegfried}, year={2009} }'
chicago: Feste, Sebastian F., Thomas Schäpers, Dan Buca, Qing Tai Zhao, Joachim
Knoch, Mohammed Bouhassoune, Arno Schindlmayr, and Siegfried Mantl. “Measurement
of Effective Electron Mass in Biaxial Tensile Strained Silicon on Insulator.”
Applied Physics Letters 95, no. 18 (2009). https://doi.org/10.1063/1.3254330.
ieee: 'S. F. Feste et al., “Measurement of effective electron mass in biaxial
tensile strained silicon on insulator,” Applied Physics Letters, vol. 95,
no. 18, Art. no. 182101, 2009, doi: 10.1063/1.3254330.'
mla: Feste, Sebastian F., et al. “Measurement of Effective Electron Mass in Biaxial
Tensile Strained Silicon on Insulator.” Applied Physics Letters, vol. 95,
no. 18, 182101, American Institute of Physics, 2009, doi:10.1063/1.3254330.
short: S.F. Feste, T. Schäpers, D. Buca, Q.T. Zhao, J. Knoch, M. Bouhassoune, A.
Schindlmayr, S. Mantl, Applied Physics Letters 95 (2009).
date_created: 2020-08-28T22:24:30Z
date_updated: 2025-12-16T08:10:54Z
ddc:
- '530'
department:
- _id: '296'
- _id: '170'
- _id: '230'
doi: 10.1063/1.3254330
external_id:
isi:
- '000271666800034'
file:
- access_level: open_access
content_type: application/pdf
creator: schindlm
date_created: 2020-08-28T22:28:31Z
date_updated: 2020-08-30T15:29:43Z
description: © 2009 American Institute of Physics
file_id: '18633'
file_name: 1.3254330.pdf
file_size: 198836
relation: main_file
title: Measurement of effective electron mass in biaxial tensile strained silicon
on insulator
file_date_updated: 2020-08-30T15:29:43Z
has_accepted_license: '1'
intvolume: ' 95'
isi: '1'
issue: '18'
language:
- iso: eng
oa: '1'
publication: Applied Physics Letters
publication_identifier:
eissn:
- 1077-3118
issn:
- 0003-6951
publication_status: published
publisher: American Institute of Physics
quality_controlled: '1'
status: public
title: Measurement of effective electron mass in biaxial tensile strained silicon
on insulator
type: journal_article
user_id: '16199'
volume: 95
year: '2009'
...