---
_id: '7640'
article_number: '193111'
author:
- first_name: W.
full_name: Lei, W.
last_name: Lei
- first_name: M.
full_name: Offer, M.
last_name: Offer
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: C.
full_name: Notthoff, C.
last_name: Notthoff
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: O.
full_name: Wibbelhoff, O.
last_name: Wibbelhoff
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Lei W, Offer M, Lorke A, et al. Probing the band structure of InAs∕GaAs quantum
dots by capacitance-voltage and photoluminescence spectroscopy. Applied Physics
Letters. 2008;92(19). doi:10.1063/1.2920439
apa: Lei, W., Offer, M., Lorke, A., Notthoff, C., Meier, C., Wibbelhoff, O., &
Wieck, A. D. (2008). Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage
and photoluminescence spectroscopy. Applied Physics Letters, 92(19).
https://doi.org/10.1063/1.2920439
bibtex: '@article{Lei_Offer_Lorke_Notthoff_Meier_Wibbelhoff_Wieck_2008, title={Probing
the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence
spectroscopy}, volume={92}, DOI={10.1063/1.2920439},
number={19193111}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Lei, W. and Offer, M. and Lorke, A. and Notthoff, C. and Meier, Cedrik
and Wibbelhoff, O. and Wieck, A. D.}, year={2008} }'
chicago: Lei, W., M. Offer, A. Lorke, C. Notthoff, Cedrik Meier, O. Wibbelhoff,
and A. D. Wieck. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage
and Photoluminescence Spectroscopy.” Applied Physics Letters 92, no. 19
(2008). https://doi.org/10.1063/1.2920439.
ieee: W. Lei et al., “Probing the band structure of InAs∕GaAs quantum dots
by capacitance-voltage and photoluminescence spectroscopy,” Applied Physics
Letters, vol. 92, no. 19, 2008.
mla: Lei, W., et al. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage
and Photoluminescence Spectroscopy.” Applied Physics Letters, vol. 92,
no. 19, 193111, AIP Publishing, 2008, doi:10.1063/1.2920439.
short: W. Lei, M. Offer, A. Lorke, C. Notthoff, C. Meier, O. Wibbelhoff, A.D. Wieck,
Applied Physics Letters 92 (2008).
date_created: 2019-02-13T11:30:23Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2920439
extern: '1'
intvolume: ' 92'
issue: '19'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage
and photoluminescence spectroscopy
type: journal_article
user_id: '20798'
volume: 92
year: '2008'
...
---
_id: '8603'
article_number: '112111'
author:
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: A.
full_name: Melnikov, A.
last_name: Melnikov
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Y.
full_name: Cordier, Y.
last_name: Cordier
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Lo F-Y, Melnikov A, Reuter D, Cordier Y, Wieck AD. Magnetotransport in Gd-implanted
wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. Applied
Physics Letters. 2008. doi:10.1063/1.2899968
apa: Lo, F.-Y., Melnikov, A., Reuter, D., Cordier, Y., & Wieck, A. D. (2008).
Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility
transistor structures. Applied Physics Letters. https://doi.org/10.1063/1.2899968
bibtex: '@article{Lo_Melnikov_Reuter_Cordier_Wieck_2008, title={Magnetotransport
in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures},
DOI={10.1063/1.2899968}, number={112111},
journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov, A. and Reuter,
Dirk and Cordier, Y. and Wieck, A. D.}, year={2008} }'
chicago: Lo, F.-Y., A. Melnikov, Dirk Reuter, Y. Cordier, and A. D. Wieck. “Magnetotransport
in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.”
Applied Physics Letters, 2008. https://doi.org/10.1063/1.2899968.
ieee: F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, “Magnetotransport
in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures,”
Applied Physics Letters, 2008.
mla: Lo, F. Y., et al. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN
High Electron Mobility Transistor Structures.” Applied Physics Letters,
112111, 2008, doi:10.1063/1.2899968.
short: F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, A.D. Wieck, Applied Physics
Letters (2008).
date_created: 2019-03-26T09:26:36Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2899968
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility
transistor structures
type: journal_article
user_id: '42514'
year: '2008'
...
---
_id: '8607'
article_number: '241920'
author:
- first_name: P. E.
full_name: Hohage, P. E.
last_name: Hohage
- first_name: J.
full_name: Nannen, J.
last_name: Nannen
- first_name: S.
full_name: Halm, S.
last_name: Halm
- first_name: G.
full_name: Bacher, G.
last_name: Bacher
- first_name: M.
full_name: Wahle, M.
last_name: Wahle
- first_name: S. F.
full_name: Fischer, S. F.
last_name: Fischer
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Hohage PE, Nannen J, Halm S, et al. Coherent spin dynamics in Permalloy-GaAs
hybrids at room temperature. Applied Physics Letters. 2008. doi:10.1063/1.2943279
apa: Hohage, P. E., Nannen, J., Halm, S., Bacher, G., Wahle, M., Fischer, S. F.,
… Wieck, A. D. (2008). Coherent spin dynamics in Permalloy-GaAs hybrids at room
temperature. Applied Physics Letters. https://doi.org/10.1063/1.2943279
bibtex: '@article{Hohage_Nannen_Halm_Bacher_Wahle_Fischer_Kunze_Reuter_Wieck_2008,
title={Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature},
DOI={10.1063/1.2943279}, number={241920},
journal={Applied Physics Letters}, author={Hohage, P. E. and Nannen, J. and Halm,
S. and Bacher, G. and Wahle, M. and Fischer, S. F. and Kunze, U. and Reuter, Dirk
and Wieck, A. D.}, year={2008} }'
chicago: Hohage, P. E., J. Nannen, S. Halm, G. Bacher, M. Wahle, S. F. Fischer,
U. Kunze, Dirk Reuter, and A. D. Wieck. “Coherent Spin Dynamics in Permalloy-GaAs
Hybrids at Room Temperature.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2943279.
ieee: P. E. Hohage et al., “Coherent spin dynamics in Permalloy-GaAs hybrids
at room temperature,” Applied Physics Letters, 2008.
mla: Hohage, P. E., et al. “Coherent Spin Dynamics in Permalloy-GaAs Hybrids at
Room Temperature.” Applied Physics Letters, 241920, 2008, doi:10.1063/1.2943279.
short: P.E. Hohage, J. Nannen, S. Halm, G. Bacher, M. Wahle, S.F. Fischer, U. Kunze,
D. Reuter, A.D. Wieck, Applied Physics Letters (2008).
date_created: 2019-03-26T09:51:24Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2943279
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature
type: journal_article
user_id: '42514'
year: '2008'
...
---
_id: '8608'
article_number: '242102'
author:
- first_name: S.
full_name: Hövel, S.
last_name: Hövel
- first_name: N. C.
full_name: Gerhardt, N. C.
last_name: Gerhardt
- first_name: M. R.
full_name: Hofmann, M. R.
last_name: Hofmann
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: E.
full_name: Schuster, E.
last_name: Schuster
- first_name: W.
full_name: Keune, W.
last_name: Keune
- first_name: H.
full_name: Wende, H.
last_name: Wende
- first_name: O.
full_name: Petracic, O.
last_name: Petracic
- first_name: K.
full_name: Westerholt, K.
last_name: Westerholt
citation:
ama: Hövel S, Gerhardt NC, Hofmann MR, et al. Electrical detection of photoinduced
spins both at room temperature and in remanence. Applied Physics Letters.
2008. doi:10.1063/1.2948856
apa: Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Reuter, D., Wieck, A.
D., … Westerholt, K. (2008). Electrical detection of photoinduced spins both at
room temperature and in remanence. Applied Physics Letters. https://doi.org/10.1063/1.2948856
bibtex: '@article{Hövel_Gerhardt_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Wende_Petracic_et
al._2008, title={Electrical detection of photoinduced spins both at room temperature
and in remanence}, DOI={10.1063/1.2948856},
number={242102}, journal={Applied Physics Letters}, author={Hövel, S. and Gerhardt,
N. C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster,
E. and Keune, W. and Wende, H. and Petracic, O. and et al.}, year={2008} }'
chicago: Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, Dirk Reuter, A. D.
Wieck, E. Schuster, et al. “Electrical Detection of Photoinduced Spins Both at
Room Temperature and in Remanence.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2948856.
ieee: S. Hövel et al., “Electrical detection of photoinduced spins both at
room temperature and in remanence,” Applied Physics Letters, 2008.
mla: Hövel, S., et al. “Electrical Detection of Photoinduced Spins Both at Room
Temperature and in Remanence.” Applied Physics Letters, 242102, 2008, doi:10.1063/1.2948856.
short: S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D. Wieck, E.
Schuster, W. Keune, H. Wende, O. Petracic, K. Westerholt, Applied Physics Letters
(2008).
date_created: 2019-03-26T09:52:27Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2948856
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Electrical detection of photoinduced spins both at room temperature and in
remanence
type: journal_article
user_id: '42514'
year: '2008'
...
---
_id: '8609'
article_number: '021117'
author:
- first_name: S.
full_name: Hövel, S.
last_name: Hövel
- first_name: N. C.
full_name: Gerhardt, N. C.
last_name: Gerhardt
- first_name: M. R.
full_name: Hofmann, M. R.
last_name: Hofmann
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: A.
full_name: Ludwig, A.
last_name: Ludwig
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: E.
full_name: Schuster, E.
last_name: Schuster
- first_name: H.
full_name: Wende, H.
last_name: Wende
- first_name: W.
full_name: Keune, W.
last_name: Keune
- first_name: O.
full_name: Petracic, O.
last_name: Petracic
- first_name: K.
full_name: Westerholt, K.
last_name: Westerholt
citation:
ama: Hövel S, Gerhardt NC, Hofmann MR, et al. Room temperature electrical spin injection
in remanence. Applied Physics Letters. 2008. doi:10.1063/1.2957469
apa: Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Ludwig, A., Reuter,
D., … Westerholt, K. (2008). Room temperature electrical spin injection in remanence.
Applied Physics Letters. https://doi.org/10.1063/1.2957469
bibtex: '@article{Hövel_Gerhardt_Hofmann_Lo_Ludwig_Reuter_Wieck_Schuster_Wende_Keune_et
al._2008, title={Room temperature electrical spin injection in remanence}, DOI={10.1063/1.2957469}, number={021117},
journal={Applied Physics Letters}, author={Hövel, S. and Gerhardt, N. C. and Hofmann,
M. R. and Lo, F.-Y. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Schuster,
E. and Wende, H. and Keune, W. and et al.}, year={2008} }'
chicago: Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, A. Ludwig, Dirk Reuter,
A. D. Wieck, et al. “Room Temperature Electrical Spin Injection in Remanence.”
Applied Physics Letters, 2008. https://doi.org/10.1063/1.2957469.
ieee: S. Hövel et al., “Room temperature electrical spin injection in remanence,”
Applied Physics Letters, 2008.
mla: Hövel, S., et al. “Room Temperature Electrical Spin Injection in Remanence.”
Applied Physics Letters, 021117, 2008, doi:10.1063/1.2957469.
short: S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A.D.
Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt, Applied Physics
Letters (2008).
date_created: 2019-03-26T09:53:44Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2957469
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Room temperature electrical spin injection in remanence
type: journal_article
user_id: '42514'
year: '2008'
...
---
_id: '39749'
article_number: '131903'
author:
- first_name: A.
full_name: Hoischen, A.
last_name: Hoischen
- first_name: S. A.
full_name: Benning, S. A.
last_name: Benning
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Hoischen A, Benning SA, Kitzerow H-S. Submicrometer periodic patterns fixed
by photopolymerization of dissipative structures. Applied Physics Letters.
2008;93(13). doi:10.1063/1.2990762
apa: Hoischen, A., Benning, S. A., & Kitzerow, H.-S. (2008). Submicrometer periodic
patterns fixed by photopolymerization of dissipative structures. Applied Physics
Letters, 93(13), Article 131903. https://doi.org/10.1063/1.2990762
bibtex: '@article{Hoischen_Benning_Kitzerow_2008, title={Submicrometer periodic
patterns fixed by photopolymerization of dissipative structures}, volume={93},
DOI={10.1063/1.2990762}, number={13131903},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hoischen,
A. and Benning, S. A. and Kitzerow, Heinz-Siegfried}, year={2008} }'
chicago: Hoischen, A., S. A. Benning, and Heinz-Siegfried Kitzerow. “Submicrometer
Periodic Patterns Fixed by Photopolymerization of Dissipative Structures.” Applied
Physics Letters 93, no. 13 (2008). https://doi.org/10.1063/1.2990762.
ieee: 'A. Hoischen, S. A. Benning, and H.-S. Kitzerow, “Submicrometer periodic patterns
fixed by photopolymerization of dissipative structures,” Applied Physics Letters,
vol. 93, no. 13, Art. no. 131903, 2008, doi: 10.1063/1.2990762.'
mla: Hoischen, A., et al. “Submicrometer Periodic Patterns Fixed by Photopolymerization
of Dissipative Structures.” Applied Physics Letters, vol. 93, no. 13, 131903,
AIP Publishing, 2008, doi:10.1063/1.2990762.
short: A. Hoischen, S.A. Benning, H.-S. Kitzerow, Applied Physics Letters 93 (2008).
date_created: 2023-01-24T18:52:43Z
date_updated: 2023-01-24T18:53:04Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.2990762
intvolume: ' 93'
issue: '13'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Submicrometer periodic patterns fixed by photopolymerization of dissipative
structures
type: journal_article
user_id: '254'
volume: 93
year: '2008'
...
---
_id: '39751'
article_number: '183304'
author:
- first_name: Andreas
full_name: Redler, Andreas
last_name: Redler
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Redler A, Kitzerow H-S. Influence of doping on the photorefractive properties
of a polymer-dispersed liquid crystal. Applied Physics Letters. 2008;93(18).
doi:10.1063/1.3021364
apa: Redler, A., & Kitzerow, H.-S. (2008). Influence of doping on the photorefractive
properties of a polymer-dispersed liquid crystal. Applied Physics Letters,
93(18), Article 183304. https://doi.org/10.1063/1.3021364
bibtex: '@article{Redler_Kitzerow_2008, title={Influence of doping on the photorefractive
properties of a polymer-dispersed liquid crystal}, volume={93}, DOI={10.1063/1.3021364},
number={18183304}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Redler, Andreas and Kitzerow, Heinz-Siegfried}, year={2008} }'
chicago: Redler, Andreas, and Heinz-Siegfried Kitzerow. “Influence of Doping on
the Photorefractive Properties of a Polymer-Dispersed Liquid Crystal.” Applied
Physics Letters 93, no. 18 (2008). https://doi.org/10.1063/1.3021364.
ieee: 'A. Redler and H.-S. Kitzerow, “Influence of doping on the photorefractive
properties of a polymer-dispersed liquid crystal,” Applied Physics Letters,
vol. 93, no. 18, Art. no. 183304, 2008, doi: 10.1063/1.3021364.'
mla: Redler, Andreas, and Heinz-Siegfried Kitzerow. “Influence of Doping on the
Photorefractive Properties of a Polymer-Dispersed Liquid Crystal.” Applied
Physics Letters, vol. 93, no. 18, 183304, AIP Publishing, 2008, doi:10.1063/1.3021364.
short: A. Redler, H.-S. Kitzerow, Applied Physics Letters 93 (2008).
date_created: 2023-01-24T18:53:20Z
date_updated: 2023-01-24T18:53:34Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.3021364
intvolume: ' 93'
issue: '18'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Influence of doping on the photorefractive properties of a polymer-dispersed
liquid crystal
type: journal_article
user_id: '254'
volume: 93
year: '2008'
...
---
_id: '26076'
article_number: '151109'
author:
- first_name: Xiao-Feng
full_name: Han, Xiao-Feng
last_name: Han
- first_name: Yu-Xiang
full_name: Weng, Yu-Xiang
last_name: Weng
- first_name: Rui
full_name: Wang, Rui
last_name: Wang
- first_name: Xi-Hao
full_name: Chen, Xi-Hao
last_name: Chen
- first_name: Kai Hong
full_name: Luo, Kai Hong
id: '36389'
last_name: Luo
orcid: 0000-0003-1008-4976
- first_name: Ling-An
full_name: Wu, Ling-An
last_name: Wu
- first_name: Jimin
full_name: Zhao, Jimin
last_name: Zhao
citation:
ama: Han X-F, Weng Y-X, Wang R, et al. Single-photon level ultrafast all-optical
switching. Applied Physics Letters. Published online 2008. doi:10.1063/1.2909540
apa: Han, X.-F., Weng, Y.-X., Wang, R., Chen, X.-H., Luo, K. H., Wu, L.-A., &
Zhao, J. (2008). Single-photon level ultrafast all-optical switching. Applied
Physics Letters, Article 151109. https://doi.org/10.1063/1.2909540
bibtex: '@article{Han_Weng_Wang_Chen_Luo_Wu_Zhao_2008, title={Single-photon level
ultrafast all-optical switching}, DOI={10.1063/1.2909540},
number={151109}, journal={Applied Physics Letters}, author={Han, Xiao-Feng and
Weng, Yu-Xiang and Wang, Rui and Chen, Xi-Hao and Luo, Kai Hong and Wu, Ling-An
and Zhao, Jimin}, year={2008} }'
chicago: Han, Xiao-Feng, Yu-Xiang Weng, Rui Wang, Xi-Hao Chen, Kai Hong Luo, Ling-An
Wu, and Jimin Zhao. “Single-Photon Level Ultrafast All-Optical Switching.” Applied
Physics Letters, 2008. https://doi.org/10.1063/1.2909540.
ieee: 'X.-F. Han et al., “Single-photon level ultrafast all-optical switching,”
Applied Physics Letters, Art. no. 151109, 2008, doi: 10.1063/1.2909540.'
mla: Han, Xiao-Feng, et al. “Single-Photon Level Ultrafast All-Optical Switching.”
Applied Physics Letters, 151109, 2008, doi:10.1063/1.2909540.
short: X.-F. Han, Y.-X. Weng, R. Wang, X.-H. Chen, K.H. Luo, L.-A. Wu, J. Zhao,
Applied Physics Letters (2008).
date_created: 2021-10-12T08:46:00Z
date_updated: 2023-01-26T10:08:30Z
doi: 10.1063/1.2909540
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Single-photon level ultrafast all-optical switching
type: journal_article
user_id: '36389'
year: '2008'
...
---
_id: '59695'
abstract:
- lang: eng
text: We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer
structures with remanent perpendicular magnetization into GaAs-based light-emitting
diodes at room temperature. Using a reverse-biased Schottky contact and a MgO
tunnel contact, respectively, we achieve spin injection at remanence. The maximum
degree of circular polarization of the emitted light is 3% at room temperature.
article_type: original
author:
- first_name: S.
full_name: Hövel, S.
last_name: Hövel
- first_name: N. C.
full_name: Gerhardt, N. C.
last_name: Gerhardt
- first_name: M. R.
full_name: Hofmann, M. R.
last_name: Hofmann
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: A.
full_name: Ludwig, A.
last_name: Ludwig
- first_name: D.
full_name: Reuter, D.
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: E.
full_name: Schuster, E.
last_name: Schuster
- first_name: H.
full_name: Wende, H.
last_name: Wende
- first_name: W.
full_name: Keune, W.
last_name: Keune
- first_name: O.
full_name: Petracic, O.
last_name: Petracic
- first_name: K.
full_name: Westerholt, K.
last_name: Westerholt
citation:
ama: Hövel S, Gerhardt NC, Hofmann MR, et al. Room temperature electrical spin injection
in remanence. Applied Physics Letters. 2008;93(2). doi:10.1063/1.2957469
apa: Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Ludwig, A., Reuter,
D., Wieck, A. D., Schuster, E., Wende, H., Keune, W., Petracic, O., & Westerholt,
K. (2008). Room temperature electrical spin injection in remanence. Applied
Physics Letters, 93(2). https://doi.org/10.1063/1.2957469
bibtex: '@article{Hövel_Gerhardt_Hofmann_Lo_Ludwig_Reuter_Wieck_Schuster_Wende_Keune_et
al._2008, title={Room temperature electrical spin injection in remanence}, volume={93},
DOI={10.1063/1.2957469}, number={2},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hövel,
S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Ludwig, A. and Reuter,
D. and Wieck, A. D. and Schuster, E. and Wende, H. and Keune, W. and et al.},
year={2008} }'
chicago: Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter,
A. D. Wieck, et al. “Room Temperature Electrical Spin Injection in Remanence.”
Applied Physics Letters 93, no. 2 (2008). https://doi.org/10.1063/1.2957469.
ieee: 'S. Hövel et al., “Room temperature electrical spin injection in remanence,”
Applied Physics Letters, vol. 93, no. 2, 2008, doi: 10.1063/1.2957469.'
mla: Hövel, S., et al. “Room Temperature Electrical Spin Injection in Remanence.”
Applied Physics Letters, vol. 93, no. 2, AIP Publishing, 2008, doi:10.1063/1.2957469.
short: S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A.D.
Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt, Applied Physics
Letters 93 (2008).
date_created: 2025-04-25T10:28:29Z
date_updated: 2026-02-25T09:38:49Z
doi: 10.1063/1.2957469
intvolume: ' 93'
issue: '2'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
quality_controlled: '1'
status: public
title: Room temperature electrical spin injection in remanence
type: journal_article
user_id: '15911'
volume: 93
year: '2008'
...
---
_id: '59694'
abstract:
- lang: eng
text: We demonstrate electrical spin injection from ferromagnetic Fe/Tb
multilayer structures with remanent perpendicular magnetization into GaAs-based
light-emitting diodes at room temperature. Using a reverse-biased Schottky contact
and a MgO tunnel contact, respectively, we achieve spin injection at remanence.
The maximum degree of circular polarization of the emitted light is 3% at room
temperature.
author:
- first_name: S.
full_name: Hövel, S.
last_name: Hövel
- first_name: N. C.
full_name: Gerhardt, N. C.
last_name: Gerhardt
- first_name: M. R.
full_name: Hofmann, M. R.
last_name: Hofmann
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: A.
full_name: Ludwig, A.
last_name: Ludwig
- first_name: D.
full_name: Reuter, D.
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: E.
full_name: Schuster, E.
last_name: Schuster
- first_name: H.
full_name: Wende, H.
last_name: Wende
- first_name: W.
full_name: Keune, W.
last_name: Keune
- first_name: O.
full_name: Petracic, O.
last_name: Petracic
- first_name: K.
full_name: Westerholt, K.
last_name: Westerholt
citation:
ama: Hövel S, Gerhardt NC, Hofmann MR, et al. Room temperature electrical spin injection
in remanence. Applied Physics Letters. 2008;93(2). doi:10.1063/1.2957469
apa: Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Ludwig, A., Reuter,
D., Wieck, A. D., Schuster, E., Wende, H., Keune, W., Petracic, O., & Westerholt,
K. (2008). Room temperature electrical spin injection in remanence. Applied
Physics Letters, 93(2). https://doi.org/10.1063/1.2957469
bibtex: '@article{Hövel_Gerhardt_Hofmann_Lo_Ludwig_Reuter_Wieck_Schuster_Wende_Keune_et
al._2008, title={Room temperature electrical spin injection in remanence}, volume={93},
DOI={10.1063/1.2957469}, number={2},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hövel,
S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Ludwig, A. and Reuter,
D. and Wieck, A. D. and Schuster, E. and Wende, H. and Keune, W. and et al.},
year={2008} }'
chicago: Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter,
A. D. Wieck, et al. “Room Temperature Electrical Spin Injection in Remanence.”
Applied Physics Letters 93, no. 2 (2008). https://doi.org/10.1063/1.2957469.
ieee: 'S. Hövel et al., “Room temperature electrical spin injection in remanence,”
Applied Physics Letters, vol. 93, no. 2, 2008, doi: 10.1063/1.2957469.'
mla: Hövel, S., et al. “Room Temperature Electrical Spin Injection in Remanence.”
Applied Physics Letters, vol. 93, no. 2, AIP Publishing, 2008, doi:10.1063/1.2957469.
short: S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A.D.
Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt, Applied Physics
Letters 93 (2008).
date_created: 2025-04-25T10:25:27Z
date_updated: 2026-02-25T14:01:26Z
department:
- _id: '977'
doi: 10.1063/1.2957469
intvolume: ' 93'
issue: '2'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Room temperature electrical spin injection in remanence
type: journal_article
user_id: '15911'
volume: 93
year: '2008'
...
---
_id: '1761'
article_number: '151109'
author:
- first_name: Carsten
full_name: Rockstuhl, Carsten
last_name: Rockstuhl
- first_name: Falk
full_name: Lederer, Falk
last_name: Lederer
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: Harald
full_name: Giessen, Harald
last_name: Giessen
citation:
ama: Rockstuhl C, Lederer F, Zentgraf T, Giessen H. Enhanced transmission of periodic,
quasiperiodic, and random nanoaperture arrays. Applied Physics Letters.
2007;91(15). doi:10.1063/1.2799240
apa: Rockstuhl, C., Lederer, F., Zentgraf, T., & Giessen, H. (2007). Enhanced
transmission of periodic, quasiperiodic, and random nanoaperture arrays. Applied
Physics Letters, 91(15). https://doi.org/10.1063/1.2799240
bibtex: '@article{Rockstuhl_Lederer_Zentgraf_Giessen_2007, title={Enhanced transmission
of periodic, quasiperiodic, and random nanoaperture arrays}, volume={91}, DOI={10.1063/1.2799240}, number={15151109},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Rockstuhl,
Carsten and Lederer, Falk and Zentgraf, Thomas and Giessen, Harald}, year={2007}
}'
chicago: Rockstuhl, Carsten, Falk Lederer, Thomas Zentgraf, and Harald Giessen.
“Enhanced Transmission of Periodic, Quasiperiodic, and Random Nanoaperture Arrays.”
Applied Physics Letters 91, no. 15 (2007). https://doi.org/10.1063/1.2799240.
ieee: C. Rockstuhl, F. Lederer, T. Zentgraf, and H. Giessen, “Enhanced transmission
of periodic, quasiperiodic, and random nanoaperture arrays,” Applied Physics
Letters, vol. 91, no. 15, 2007.
mla: Rockstuhl, Carsten, et al. “Enhanced Transmission of Periodic, Quasiperiodic,
and Random Nanoaperture Arrays.” Applied Physics Letters, vol. 91, no.
15, 151109, AIP Publishing, 2007, doi:10.1063/1.2799240.
short: C. Rockstuhl, F. Lederer, T. Zentgraf, H. Giessen, Applied Physics Letters
91 (2007).
date_created: 2018-03-23T13:07:38Z
date_updated: 2022-01-06T06:53:16Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2799240
intvolume: ' 91'
issue: '15'
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays
type: journal_article
user_id: '30525'
volume: 91
year: '2007'
...
---
_id: '7644'
article_number: '143113'
author:
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Kevin
full_name: Hennessy, Kevin
last_name: Hennessy
citation:
ama: Meier C, Hennessy K. Technique for tilting GaAs photonic crystal nanocavities
out of plane. Applied Physics Letters. 2007;90(14). doi:10.1063/1.2719612
apa: Meier, C., & Hennessy, K. (2007). Technique for tilting GaAs photonic crystal
nanocavities out of plane. Applied Physics Letters, 90(14). https://doi.org/10.1063/1.2719612
bibtex: '@article{Meier_Hennessy_2007, title={Technique for tilting GaAs photonic
crystal nanocavities out of plane}, volume={90}, DOI={10.1063/1.2719612},
number={14143113}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Meier, Cedrik and Hennessy, Kevin}, year={2007} }'
chicago: Meier, Cedrik, and Kevin Hennessy. “Technique for Tilting GaAs Photonic
Crystal Nanocavities out of Plane.” Applied Physics Letters 90, no. 14
(2007). https://doi.org/10.1063/1.2719612.
ieee: C. Meier and K. Hennessy, “Technique for tilting GaAs photonic crystal nanocavities
out of plane,” Applied Physics Letters, vol. 90, no. 14, 2007.
mla: Meier, Cedrik, and Kevin Hennessy. “Technique for Tilting GaAs Photonic Crystal
Nanocavities out of Plane.” Applied Physics Letters, vol. 90, no. 14, 143113,
AIP Publishing, 2007, doi:10.1063/1.2719612.
short: C. Meier, K. Hennessy, Applied Physics Letters 90 (2007).
date_created: 2019-02-13T11:34:33Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2719612
extern: '1'
intvolume: ' 90'
issue: '14'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Technique for tilting GaAs photonic crystal nanocavities out of plane
type: journal_article
user_id: '20798'
volume: 90
year: '2007'
...
---
_id: '8630'
article_number: '262505'
author:
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: A.
full_name: Melnikov, A.
last_name: Melnikov
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: V.
full_name: Ney, V.
last_name: Ney
- first_name: T.
full_name: Kammermeier, T.
last_name: Kammermeier
- first_name: A.
full_name: Ney, A.
last_name: Ney
- first_name: J.
full_name: Schörmann, J.
last_name: Schörmann
- first_name: S.
full_name: Potthast, S.
last_name: Potthast
- first_name: D. J.
full_name: As, D. J.
last_name: As
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
citation:
ama: Lo F-Y, Melnikov A, Reuter D, et al. Magnetic and structural properties of
Gd-implanted zinc-blende GaN. Applied Physics Letters. 2007. doi:10.1063/1.2753113
apa: Lo, F.-Y., Melnikov, A., Reuter, D., Wieck, A. D., Ney, V., Kammermeier, T.,
… Lischka, K. (2007). Magnetic and structural properties of Gd-implanted zinc-blende
GaN. Applied Physics Letters. https://doi.org/10.1063/1.2753113
bibtex: '@article{Lo_Melnikov_Reuter_Wieck_Ney_Kammermeier_Ney_Schörmann_Potthast_As_et
al._2007, title={Magnetic and structural properties of Gd-implanted zinc-blende
GaN}, DOI={10.1063/1.2753113},
number={262505}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov,
A. and Reuter, Dirk and Wieck, A. D. and Ney, V. and Kammermeier, T. and Ney,
A. and Schörmann, J. and Potthast, S. and As, D. J. and et al.}, year={2007} }'
chicago: Lo, F.-Y., A. Melnikov, Dirk Reuter, A. D. Wieck, V. Ney, T. Kammermeier,
A. Ney, et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende
GaN.” Applied Physics Letters, 2007. https://doi.org/10.1063/1.2753113.
ieee: F.-Y. Lo et al., “Magnetic and structural properties of Gd-implanted
zinc-blende GaN,” Applied Physics Letters, 2007.
mla: Lo, F. Y., et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende
GaN.” Applied Physics Letters, 262505, 2007, doi:10.1063/1.2753113.
short: F.-Y. Lo, A. Melnikov, D. Reuter, A.D. Wieck, V. Ney, T. Kammermeier, A.
Ney, J. Schörmann, S. Potthast, D.J. As, K. Lischka, Applied Physics Letters (2007).
date_created: 2019-03-26T10:23:42Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2753113
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Magnetic and structural properties of Gd-implanted zinc-blende GaN
type: journal_article
user_id: '42514'
year: '2007'
...
---
_id: '8632'
article_number: '123108'
author:
- first_name: M.
full_name: Mehta, M.
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A.
full_name: Melnikov, A.
last_name: Melnikov
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: A.
full_name: Remhof, A.
last_name: Remhof
citation:
ama: Mehta M, Reuter D, Melnikov A, Wieck AD, Remhof A. Focused ion beam implantation
induced site-selective growth of InAs quantum dots. Applied Physics Letters.
2007. doi:10.1063/1.2786836
apa: Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., & Remhof, A. (2007).
Focused ion beam implantation induced site-selective growth of InAs quantum dots.
Applied Physics Letters. https://doi.org/10.1063/1.2786836
bibtex: '@article{Mehta_Reuter_Melnikov_Wieck_Remhof_2007, title={Focused ion beam
implantation induced site-selective growth of InAs quantum dots}, DOI={10.1063/1.2786836},
number={123108}, journal={Applied Physics Letters}, author={Mehta, M. and Reuter,
Dirk and Melnikov, A. and Wieck, A. D. and Remhof, A.}, year={2007} }'
chicago: Mehta, M., Dirk Reuter, A. Melnikov, A. D. Wieck, and A. Remhof. “Focused
Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” Applied
Physics Letters, 2007. https://doi.org/10.1063/1.2786836.
ieee: M. Mehta, D. Reuter, A. Melnikov, A. D. Wieck, and A. Remhof, “Focused ion
beam implantation induced site-selective growth of InAs quantum dots,” Applied
Physics Letters, 2007.
mla: Mehta, M., et al. “Focused Ion Beam Implantation Induced Site-Selective Growth
of InAs Quantum Dots.” Applied Physics Letters, 123108, 2007, doi:10.1063/1.2786836.
short: M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, A. Remhof, Applied Physics
Letters (2007).
date_created: 2019-03-26T10:26:08Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2786836
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Focused ion beam implantation induced site-selective growth of InAs quantum
dots
type: journal_article
user_id: '42514'
year: '2007'
...
---
_id: '25986'
abstract:
- lang: eng
text: "The authors report the synthesis of nanoporous ZnO, which exhibits a periodically
ordered, uniform pore system with crystalline pore walls. The crystalline structure
is investigated by x-ray diffraction, transmission electron microscopy, and selected
area electron diffraction. The large specific surface area and the uniformity
of the pore system are confirmed by nitrogen physisorption. Raman spectroscopy
along with low-temperature photoluminescence measurements confirms the high degree
of crystallinity and gives insight into defects participating in the radiative
recombination processes.\r\nThe authors thank Günter Koch for recording the TEM
images and Marie-Luise Wolff for valuable help in the laboratory one of the authors
(M.T.) thanks Michael Fröba for the continuous support."
article_number: '123108'
article_type: original
author:
- first_name: T.
full_name: Waitz, T.
last_name: Waitz
- first_name: Michael
full_name: Tiemann, Michael
id: '23547'
last_name: Tiemann
orcid: 0000-0003-1711-2722
- first_name: P. J.
full_name: Klar, P. J.
last_name: Klar
- first_name: J.
full_name: Sann, J.
last_name: Sann
- first_name: J.
full_name: Stehr, J.
last_name: Stehr
- first_name: B. K.
full_name: Meyer, B. K.
last_name: Meyer
citation:
ama: Waitz T, Tiemann M, Klar PJ, Sann J, Stehr J, Meyer BK. Crystalline ZnO with
an enhanced surface area obtained by nanocasting. Applied Physics Letters.
Published online 2007. doi:10.1063/1.2713872
apa: Waitz, T., Tiemann, M., Klar, P. J., Sann, J., Stehr, J., & Meyer, B. K.
(2007). Crystalline ZnO with an enhanced surface area obtained by nanocasting.
Applied Physics Letters, Article 123108. https://doi.org/10.1063/1.2713872
bibtex: '@article{Waitz_Tiemann_Klar_Sann_Stehr_Meyer_2007, title={Crystalline ZnO
with an enhanced surface area obtained by nanocasting}, DOI={10.1063/1.2713872},
number={123108}, journal={Applied Physics Letters}, author={Waitz, T. and Tiemann,
Michael and Klar, P. J. and Sann, J. and Stehr, J. and Meyer, B. K.}, year={2007}
}'
chicago: Waitz, T., Michael Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer.
“Crystalline ZnO with an Enhanced Surface Area Obtained by Nanocasting.” Applied
Physics Letters, 2007. https://doi.org/10.1063/1.2713872.
ieee: 'T. Waitz, M. Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer, “Crystalline
ZnO with an enhanced surface area obtained by nanocasting,” Applied Physics
Letters, Art. no. 123108, 2007, doi: 10.1063/1.2713872.'
mla: Waitz, T., et al. “Crystalline ZnO with an Enhanced Surface Area Obtained by
Nanocasting.” Applied Physics Letters, 123108, 2007, doi:10.1063/1.2713872.
short: T. Waitz, M. Tiemann, P.J. Klar, J. Sann, J. Stehr, B.K. Meyer, Applied Physics
Letters (2007).
date_created: 2021-10-09T09:40:39Z
date_updated: 2023-03-09T08:49:01Z
department:
- _id: '35'
- _id: '2'
- _id: '307'
doi: 10.1063/1.2713872
extern: '1'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
quality_controlled: '1'
status: public
title: Crystalline ZnO with an enhanced surface area obtained by nanocasting
type: journal_article
user_id: '23547'
year: '2007'
...
---
_id: '39561'
article_number: '013501'
author:
- first_name: M.
full_name: Scharnberg, M.
last_name: Scharnberg
- first_name: V.
full_name: Zaporojtchenko, V.
last_name: Zaporojtchenko
- first_name: R.
full_name: Adelung, R.
last_name: Adelung
- first_name: F.
full_name: Faupel, F.
last_name: Faupel
- first_name: C.
full_name: Pannemann, C.
last_name: Pannemann
- first_name: T.
full_name: Diekmann, T.
last_name: Diekmann
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
citation:
ama: Scharnberg M, Zaporojtchenko V, Adelung R, et al. Tuning the threshold voltage
of organic field-effect transistors by an electret encapsulating layer. Applied
Physics Letters. 2007;90(1). doi:10.1063/1.2426926
apa: Scharnberg, M., Zaporojtchenko, V., Adelung, R., Faupel, F., Pannemann, C.,
Diekmann, T., & Hilleringmann, U. (2007). Tuning the threshold voltage of
organic field-effect transistors by an electret encapsulating layer. Applied
Physics Letters, 90(1), Article 013501. https://doi.org/10.1063/1.2426926
bibtex: '@article{Scharnberg_Zaporojtchenko_Adelung_Faupel_Pannemann_Diekmann_Hilleringmann_2007,
title={Tuning the threshold voltage of organic field-effect transistors by an
electret encapsulating layer}, volume={90}, DOI={10.1063/1.2426926},
number={1013501}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Scharnberg, M. and Zaporojtchenko, V. and Adelung, R. and Faupel, F. and
Pannemann, C. and Diekmann, T. and Hilleringmann, Ulrich}, year={2007} }'
chicago: Scharnberg, M., V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann,
T. Diekmann, and Ulrich Hilleringmann. “Tuning the Threshold Voltage of Organic
Field-Effect Transistors by an Electret Encapsulating Layer.” Applied Physics
Letters 90, no. 1 (2007). https://doi.org/10.1063/1.2426926.
ieee: 'M. Scharnberg et al., “Tuning the threshold voltage of organic field-effect
transistors by an electret encapsulating layer,” Applied Physics Letters,
vol. 90, no. 1, Art. no. 013501, 2007, doi: 10.1063/1.2426926.'
mla: Scharnberg, M., et al. “Tuning the Threshold Voltage of Organic Field-Effect
Transistors by an Electret Encapsulating Layer.” Applied Physics Letters,
vol. 90, no. 1, 013501, AIP Publishing, 2007, doi:10.1063/1.2426926.
short: M. Scharnberg, V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T.
Diekmann, U. Hilleringmann, Applied Physics Letters 90 (2007).
date_created: 2023-01-24T12:15:22Z
date_updated: 2023-03-21T10:15:06Z
department:
- _id: '59'
doi: 10.1063/1.2426926
intvolume: ' 90'
issue: '1'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Tuning the threshold voltage of organic field-effect transistors by an electret
encapsulating layer
type: journal_article
user_id: '20179'
volume: 90
year: '2007'
...
---
_id: '7651'
article_number: '031111'
author:
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Kevin
full_name: Hennessy, Kevin
last_name: Hennessy
- first_name: Elaine D.
full_name: Haberer, Elaine D.
last_name: Haberer
- first_name: Rajat
full_name: Sharma, Rajat
last_name: Sharma
- first_name: Yong-Seok
full_name: Choi, Yong-Seok
last_name: Choi
- first_name: Kelly
full_name: McGroddy, Kelly
last_name: McGroddy
- first_name: Stacia
full_name: Keller, Stacia
last_name: Keller
- first_name: Steven P.
full_name: DenBaars, Steven P.
last_name: DenBaars
- first_name: Shuji
full_name: Nakamura, Shuji
last_name: Nakamura
- first_name: Evelyn L.
full_name: Hu, Evelyn L.
last_name: Hu
citation:
ama: Meier C, Hennessy K, Haberer ED, et al. Visible resonant modes in GaN-based
photonic crystal membrane cavities. Applied Physics Letters. 2006;88(3).
doi:10.1063/1.2166680
apa: Meier, C., Hennessy, K., Haberer, E. D., Sharma, R., Choi, Y.-S., McGroddy,
K., … Hu, E. L. (2006). Visible resonant modes in GaN-based photonic crystal membrane
cavities. Applied Physics Letters, 88(3). https://doi.org/10.1063/1.2166680
bibtex: '@article{Meier_Hennessy_Haberer_Sharma_Choi_McGroddy_Keller_DenBaars_Nakamura_Hu_2006,
title={Visible resonant modes in GaN-based photonic crystal membrane cavities},
volume={88}, DOI={10.1063/1.2166680},
number={3031111}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Meier, Cedrik and Hennessy, Kevin and Haberer, Elaine D. and Sharma, Rajat
and Choi, Yong-Seok and McGroddy, Kelly and Keller, Stacia and DenBaars, Steven
P. and Nakamura, Shuji and Hu, Evelyn L.}, year={2006} }'
chicago: Meier, Cedrik, Kevin Hennessy, Elaine D. Haberer, Rajat Sharma, Yong-Seok
Choi, Kelly McGroddy, Stacia Keller, Steven P. DenBaars, Shuji Nakamura, and Evelyn
L. Hu. “Visible Resonant Modes in GaN-Based Photonic Crystal Membrane Cavities.”
Applied Physics Letters 88, no. 3 (2006). https://doi.org/10.1063/1.2166680.
ieee: C. Meier et al., “Visible resonant modes in GaN-based photonic crystal
membrane cavities,” Applied Physics Letters, vol. 88, no. 3, 2006.
mla: Meier, Cedrik, et al. “Visible Resonant Modes in GaN-Based Photonic Crystal
Membrane Cavities.” Applied Physics Letters, vol. 88, no. 3, 031111, AIP
Publishing, 2006, doi:10.1063/1.2166680.
short: C. Meier, K. Hennessy, E.D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy,
S. Keller, S.P. DenBaars, S. Nakamura, E.L. Hu, Applied Physics Letters 88 (2006).
date_created: 2019-02-13T11:41:17Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2166680
extern: '1'
intvolume: ' 88'
issue: '3'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Visible resonant modes in GaN-based photonic crystal membrane cavities
type: journal_article
user_id: '20798'
volume: 88
year: '2006'
...
---
_id: '8648'
article_number: '082110'
author:
- first_name: M.
full_name: Knop, M.
last_name: Knop
- first_name: U.
full_name: Wieser, U.
last_name: Wieser
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Knop M, Wieser U, Kunze U, Reuter D, Wieck AD. Ballistic rectification in an
asymmetric mesoscopic cross junction. Applied Physics Letters. 2006. doi:10.1063/1.2179618
apa: Knop, M., Wieser, U., Kunze, U., Reuter, D., & Wieck, A. D. (2006). Ballistic
rectification in an asymmetric mesoscopic cross junction. Applied Physics Letters.
https://doi.org/10.1063/1.2179618
bibtex: '@article{Knop_Wieser_Kunze_Reuter_Wieck_2006, title={Ballistic rectification
in an asymmetric mesoscopic cross junction}, DOI={10.1063/1.2179618},
number={082110}, journal={Applied Physics Letters}, author={Knop, M. and Wieser,
U. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2006} }'
chicago: Knop, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Ballistic
Rectification in an Asymmetric Mesoscopic Cross Junction.” Applied Physics
Letters, 2006. https://doi.org/10.1063/1.2179618.
ieee: M. Knop, U. Wieser, U. Kunze, D. Reuter, and A. D. Wieck, “Ballistic rectification
in an asymmetric mesoscopic cross junction,” Applied Physics Letters, 2006.
mla: Knop, M., et al. “Ballistic Rectification in an Asymmetric Mesoscopic Cross
Junction.” Applied Physics Letters, 082110, 2006, doi:10.1063/1.2179618.
short: M. Knop, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters
(2006).
date_created: 2019-03-27T07:54:36Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2179618
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Ballistic rectification in an asymmetric mesoscopic cross junction
type: journal_article
user_id: '42514'
year: '2006'
...
---
_id: '8654'
article_number: '121115'
author:
- first_name: R.
full_name: Schmidt, R.
last_name: Schmidt
- first_name: U.
full_name: Scholz, U.
last_name: Scholz
- first_name: M.
full_name: Vitzethum, M.
last_name: Vitzethum
- first_name: R.
full_name: Fix, R.
last_name: Fix
- first_name: C.
full_name: Metzner, C.
last_name: Metzner
- first_name: P.
full_name: Kailuweit, P.
last_name: Kailuweit
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A.
full_name: Wieck, A.
last_name: Wieck
- first_name: M. C.
full_name: Hübner, M. C.
last_name: Hübner
- first_name: S.
full_name: Stufler, S.
last_name: Stufler
- first_name: A.
full_name: Zrenner, A.
last_name: Zrenner
- first_name: S.
full_name: Malzer, S.
last_name: Malzer
- first_name: G. H.
full_name: Döhler, G. H.
last_name: Döhler
citation:
ama: Schmidt R, Scholz U, Vitzethum M, et al. Fabrication of genuine single-quantum-dot
light-emitting diodes. Applied Physics Letters. 2006. doi:10.1063/1.2188057
apa: Schmidt, R., Scholz, U., Vitzethum, M., Fix, R., Metzner, C., Kailuweit, P.,
… Döhler, G. H. (2006). Fabrication of genuine single-quantum-dot light-emitting
diodes. Applied Physics Letters. https://doi.org/10.1063/1.2188057
bibtex: '@article{Schmidt_Scholz_Vitzethum_Fix_Metzner_Kailuweit_Reuter_Wieck_Hübner_Stufler_et
al._2006, title={Fabrication of genuine single-quantum-dot light-emitting diodes},
DOI={10.1063/1.2188057}, number={121115},
journal={Applied Physics Letters}, author={Schmidt, R. and Scholz, U. and Vitzethum,
M. and Fix, R. and Metzner, C. and Kailuweit, P. and Reuter, Dirk and Wieck, A.
and Hübner, M. C. and Stufler, S. and et al.}, year={2006} }'
chicago: Schmidt, R., U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit,
Dirk Reuter, et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting
Diodes.” Applied Physics Letters, 2006. https://doi.org/10.1063/1.2188057.
ieee: R. Schmidt et al., “Fabrication of genuine single-quantum-dot light-emitting
diodes,” Applied Physics Letters, 2006.
mla: Schmidt, R., et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting
Diodes.” Applied Physics Letters, 121115, 2006, doi:10.1063/1.2188057.
short: R. Schmidt, U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, D.
Reuter, A. Wieck, M.C. Hübner, S. Stufler, A. Zrenner, S. Malzer, G.H. Döhler,
Applied Physics Letters (2006).
date_created: 2019-03-27T08:21:39Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2188057
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Fabrication of genuine single-quantum-dot light-emitting diodes
type: journal_article
user_id: '42514'
year: '2006'
...
---
_id: '8665'
article_number: '123105'
author:
- first_name: V.
full_name: Stavarache, V.
last_name: Stavarache
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: M.
full_name: Schwab, M.
last_name: Schwab
- first_name: D. R.
full_name: Yakovlev, D. R.
last_name: Yakovlev
- first_name: R.
full_name: Oulton, R.
last_name: Oulton
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
citation:
ama: Stavarache V, Reuter D, Wieck AD, et al. Control of quantum dot excitons by
lateral electric fields. Applied Physics Letters. 2006. doi:10.1063/1.2345233
apa: Stavarache, V., Reuter, D., Wieck, A. D., Schwab, M., Yakovlev, D. R., Oulton,
R., & Bayer, M. (2006). Control of quantum dot excitons by lateral electric
fields. Applied Physics Letters. https://doi.org/10.1063/1.2345233
bibtex: '@article{Stavarache_Reuter_Wieck_Schwab_Yakovlev_Oulton_Bayer_2006, title={Control
of quantum dot excitons by lateral electric fields}, DOI={10.1063/1.2345233},
number={123105}, journal={Applied Physics Letters}, author={Stavarache, V. and
Reuter, Dirk and Wieck, A. D. and Schwab, M. and Yakovlev, D. R. and Oulton, R.
and Bayer, M.}, year={2006} }'
chicago: Stavarache, V., Dirk Reuter, A. D. Wieck, M. Schwab, D. R. Yakovlev, R.
Oulton, and M. Bayer. “Control of Quantum Dot Excitons by Lateral Electric Fields.”
Applied Physics Letters, 2006. https://doi.org/10.1063/1.2345233.
ieee: V. Stavarache et al., “Control of quantum dot excitons by lateral electric
fields,” Applied Physics Letters, 2006.
mla: Stavarache, V., et al. “Control of Quantum Dot Excitons by Lateral Electric
Fields.” Applied Physics Letters, 123105, 2006, doi:10.1063/1.2345233.
short: V. Stavarache, D. Reuter, A.D. Wieck, M. Schwab, D.R. Yakovlev, R. Oulton,
M. Bayer, Applied Physics Letters (2006).
date_created: 2019-03-27T08:39:57Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2345233
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Control of quantum dot excitons by lateral electric fields
type: journal_article
user_id: '42514'
year: '2006'
...