--- _id: '26076' article_number: '151109' author: - first_name: Xiao-Feng full_name: Han, Xiao-Feng last_name: Han - first_name: Yu-Xiang full_name: Weng, Yu-Xiang last_name: Weng - first_name: Rui full_name: Wang, Rui last_name: Wang - first_name: Xi-Hao full_name: Chen, Xi-Hao last_name: Chen - first_name: Kai Hong full_name: Luo, Kai Hong id: '36389' last_name: Luo orcid: 0000-0003-1008-4976 - first_name: Ling-An full_name: Wu, Ling-An last_name: Wu - first_name: Jimin full_name: Zhao, Jimin last_name: Zhao citation: ama: Han X-F, Weng Y-X, Wang R, et al. Single-photon level ultrafast all-optical switching. Applied Physics Letters. Published online 2008. doi:10.1063/1.2909540 apa: Han, X.-F., Weng, Y.-X., Wang, R., Chen, X.-H., Luo, K. H., Wu, L.-A., & Zhao, J. (2008). Single-photon level ultrafast all-optical switching. Applied Physics Letters, Article 151109. https://doi.org/10.1063/1.2909540 bibtex: '@article{Han_Weng_Wang_Chen_Luo_Wu_Zhao_2008, title={Single-photon level ultrafast all-optical switching}, DOI={10.1063/1.2909540}, number={151109}, journal={Applied Physics Letters}, author={Han, Xiao-Feng and Weng, Yu-Xiang and Wang, Rui and Chen, Xi-Hao and Luo, Kai Hong and Wu, Ling-An and Zhao, Jimin}, year={2008} }' chicago: Han, Xiao-Feng, Yu-Xiang Weng, Rui Wang, Xi-Hao Chen, Kai Hong Luo, Ling-An Wu, and Jimin Zhao. “Single-Photon Level Ultrafast All-Optical Switching.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2909540. ieee: 'X.-F. Han et al., “Single-photon level ultrafast all-optical switching,” Applied Physics Letters, Art. no. 151109, 2008, doi: 10.1063/1.2909540.' mla: Han, Xiao-Feng, et al. “Single-Photon Level Ultrafast All-Optical Switching.” Applied Physics Letters, 151109, 2008, doi:10.1063/1.2909540. short: X.-F. Han, Y.-X. Weng, R. Wang, X.-H. Chen, K.H. Luo, L.-A. Wu, J. Zhao, Applied Physics Letters (2008). date_created: 2021-10-12T08:46:00Z date_updated: 2023-01-26T10:08:30Z doi: 10.1063/1.2909540 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Single-photon level ultrafast all-optical switching type: journal_article user_id: '36389' year: '2008' ... --- _id: '1761' article_number: '151109' author: - first_name: Carsten full_name: Rockstuhl, Carsten last_name: Rockstuhl - first_name: Falk full_name: Lederer, Falk last_name: Lederer - first_name: Thomas full_name: Zentgraf, Thomas id: '30525' last_name: Zentgraf orcid: 0000-0002-8662-1101 - first_name: Harald full_name: Giessen, Harald last_name: Giessen citation: ama: Rockstuhl C, Lederer F, Zentgraf T, Giessen H. Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays. Applied Physics Letters. 2007;91(15). doi:10.1063/1.2799240 apa: Rockstuhl, C., Lederer, F., Zentgraf, T., & Giessen, H. (2007). Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays. Applied Physics Letters, 91(15). https://doi.org/10.1063/1.2799240 bibtex: '@article{Rockstuhl_Lederer_Zentgraf_Giessen_2007, title={Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays}, volume={91}, DOI={10.1063/1.2799240}, number={15151109}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Rockstuhl, Carsten and Lederer, Falk and Zentgraf, Thomas and Giessen, Harald}, year={2007} }' chicago: Rockstuhl, Carsten, Falk Lederer, Thomas Zentgraf, and Harald Giessen. “Enhanced Transmission of Periodic, Quasiperiodic, and Random Nanoaperture Arrays.” Applied Physics Letters 91, no. 15 (2007). https://doi.org/10.1063/1.2799240. ieee: C. Rockstuhl, F. Lederer, T. Zentgraf, and H. Giessen, “Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays,” Applied Physics Letters, vol. 91, no. 15, 2007. mla: Rockstuhl, Carsten, et al. “Enhanced Transmission of Periodic, Quasiperiodic, and Random Nanoaperture Arrays.” Applied Physics Letters, vol. 91, no. 15, 151109, AIP Publishing, 2007, doi:10.1063/1.2799240. short: C. Rockstuhl, F. Lederer, T. Zentgraf, H. Giessen, Applied Physics Letters 91 (2007). date_created: 2018-03-23T13:07:38Z date_updated: 2022-01-06T06:53:16Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2799240 intvolume: ' 91' issue: '15' publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays type: journal_article user_id: '30525' volume: 91 year: '2007' ... --- _id: '7644' article_number: '143113' author: - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Kevin full_name: Hennessy, Kevin last_name: Hennessy citation: ama: Meier C, Hennessy K. Technique for tilting GaAs photonic crystal nanocavities out of plane. Applied Physics Letters. 2007;90(14). doi:10.1063/1.2719612 apa: Meier, C., & Hennessy, K. (2007). Technique for tilting GaAs photonic crystal nanocavities out of plane. Applied Physics Letters, 90(14). https://doi.org/10.1063/1.2719612 bibtex: '@article{Meier_Hennessy_2007, title={Technique for tilting GaAs photonic crystal nanocavities out of plane}, volume={90}, DOI={10.1063/1.2719612}, number={14143113}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Meier, Cedrik and Hennessy, Kevin}, year={2007} }' chicago: Meier, Cedrik, and Kevin Hennessy. “Technique for Tilting GaAs Photonic Crystal Nanocavities out of Plane.” Applied Physics Letters 90, no. 14 (2007). https://doi.org/10.1063/1.2719612. ieee: C. Meier and K. Hennessy, “Technique for tilting GaAs photonic crystal nanocavities out of plane,” Applied Physics Letters, vol. 90, no. 14, 2007. mla: Meier, Cedrik, and Kevin Hennessy. “Technique for Tilting GaAs Photonic Crystal Nanocavities out of Plane.” Applied Physics Letters, vol. 90, no. 14, 143113, AIP Publishing, 2007, doi:10.1063/1.2719612. short: C. Meier, K. Hennessy, Applied Physics Letters 90 (2007). date_created: 2019-02-13T11:34:33Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2719612 extern: '1' intvolume: ' 90' issue: '14' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Technique for tilting GaAs photonic crystal nanocavities out of plane type: journal_article user_id: '20798' volume: 90 year: '2007' ... --- _id: '8630' article_number: '262505' author: - first_name: F.-Y. full_name: Lo, F.-Y. last_name: Lo - first_name: A. full_name: Melnikov, A. last_name: Melnikov - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: V. full_name: Ney, V. last_name: Ney - first_name: T. full_name: Kammermeier, T. last_name: Kammermeier - first_name: A. full_name: Ney, A. last_name: Ney - first_name: J. full_name: Schörmann, J. last_name: Schörmann - first_name: S. full_name: Potthast, S. last_name: Potthast - first_name: D. J. full_name: As, D. J. last_name: As - first_name: K. full_name: Lischka, K. last_name: Lischka citation: ama: Lo F-Y, Melnikov A, Reuter D, et al. Magnetic and structural properties of Gd-implanted zinc-blende GaN. Applied Physics Letters. 2007. doi:10.1063/1.2753113 apa: Lo, F.-Y., Melnikov, A., Reuter, D., Wieck, A. D., Ney, V., Kammermeier, T., … Lischka, K. (2007). Magnetic and structural properties of Gd-implanted zinc-blende GaN. Applied Physics Letters. https://doi.org/10.1063/1.2753113 bibtex: '@article{Lo_Melnikov_Reuter_Wieck_Ney_Kammermeier_Ney_Schörmann_Potthast_As_et al._2007, title={Magnetic and structural properties of Gd-implanted zinc-blende GaN}, DOI={10.1063/1.2753113}, number={262505}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Wieck, A. D. and Ney, V. and Kammermeier, T. and Ney, A. and Schörmann, J. and Potthast, S. and As, D. J. and et al.}, year={2007} }' chicago: Lo, F.-Y., A. Melnikov, Dirk Reuter, A. D. Wieck, V. Ney, T. Kammermeier, A. Ney, et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende GaN.” Applied Physics Letters, 2007. https://doi.org/10.1063/1.2753113. ieee: F.-Y. Lo et al., “Magnetic and structural properties of Gd-implanted zinc-blende GaN,” Applied Physics Letters, 2007. mla: Lo, F. Y., et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende GaN.” Applied Physics Letters, 262505, 2007, doi:10.1063/1.2753113. short: F.-Y. Lo, A. Melnikov, D. Reuter, A.D. Wieck, V. Ney, T. Kammermeier, A. Ney, J. Schörmann, S. Potthast, D.J. As, K. Lischka, Applied Physics Letters (2007). date_created: 2019-03-26T10:23:42Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2753113 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Magnetic and structural properties of Gd-implanted zinc-blende GaN type: journal_article user_id: '42514' year: '2007' ... --- _id: '8632' article_number: '123108' author: - first_name: M. full_name: Mehta, M. last_name: Mehta - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. full_name: Melnikov, A. last_name: Melnikov - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: A. full_name: Remhof, A. last_name: Remhof citation: ama: Mehta M, Reuter D, Melnikov A, Wieck AD, Remhof A. Focused ion beam implantation induced site-selective growth of InAs quantum dots. Applied Physics Letters. 2007. doi:10.1063/1.2786836 apa: Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., & Remhof, A. (2007). Focused ion beam implantation induced site-selective growth of InAs quantum dots. Applied Physics Letters. https://doi.org/10.1063/1.2786836 bibtex: '@article{Mehta_Reuter_Melnikov_Wieck_Remhof_2007, title={Focused ion beam implantation induced site-selective growth of InAs quantum dots}, DOI={10.1063/1.2786836}, number={123108}, journal={Applied Physics Letters}, author={Mehta, M. and Reuter, Dirk and Melnikov, A. and Wieck, A. D. and Remhof, A.}, year={2007} }' chicago: Mehta, M., Dirk Reuter, A. Melnikov, A. D. Wieck, and A. Remhof. “Focused Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” Applied Physics Letters, 2007. https://doi.org/10.1063/1.2786836. ieee: M. Mehta, D. Reuter, A. Melnikov, A. D. Wieck, and A. Remhof, “Focused ion beam implantation induced site-selective growth of InAs quantum dots,” Applied Physics Letters, 2007. mla: Mehta, M., et al. “Focused Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” Applied Physics Letters, 123108, 2007, doi:10.1063/1.2786836. short: M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, A. Remhof, Applied Physics Letters (2007). date_created: 2019-03-26T10:26:08Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2786836 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Focused ion beam implantation induced site-selective growth of InAs quantum dots type: journal_article user_id: '42514' year: '2007' ... --- _id: '25986' abstract: - lang: eng text: "The authors report the synthesis of nanoporous ZnO, which exhibits a periodically ordered, uniform pore system with crystalline pore walls. The crystalline structure is investigated by x-ray diffraction, transmission electron microscopy, and selected area electron diffraction. The large specific surface area and the uniformity of the pore system are confirmed by nitrogen physisorption. Raman spectroscopy along with low-temperature photoluminescence measurements confirms the high degree of crystallinity and gives insight into defects participating in the radiative recombination processes.\r\nThe authors thank Günter Koch for recording the TEM images and Marie-Luise Wolff for valuable help in the laboratory one of the authors (M.T.) thanks Michael Fröba for the continuous support." article_number: '123108' article_type: original author: - first_name: T. full_name: Waitz, T. last_name: Waitz - first_name: Michael full_name: Tiemann, Michael id: '23547' last_name: Tiemann orcid: 0000-0003-1711-2722 - first_name: P. J. full_name: Klar, P. J. last_name: Klar - first_name: J. full_name: Sann, J. last_name: Sann - first_name: J. full_name: Stehr, J. last_name: Stehr - first_name: B. K. full_name: Meyer, B. K. last_name: Meyer citation: ama: Waitz T, Tiemann M, Klar PJ, Sann J, Stehr J, Meyer BK. Crystalline ZnO with an enhanced surface area obtained by nanocasting. Applied Physics Letters. Published online 2007. doi:10.1063/1.2713872 apa: Waitz, T., Tiemann, M., Klar, P. J., Sann, J., Stehr, J., & Meyer, B. K. (2007). Crystalline ZnO with an enhanced surface area obtained by nanocasting. Applied Physics Letters, Article 123108. https://doi.org/10.1063/1.2713872 bibtex: '@article{Waitz_Tiemann_Klar_Sann_Stehr_Meyer_2007, title={Crystalline ZnO with an enhanced surface area obtained by nanocasting}, DOI={10.1063/1.2713872}, number={123108}, journal={Applied Physics Letters}, author={Waitz, T. and Tiemann, Michael and Klar, P. J. and Sann, J. and Stehr, J. and Meyer, B. K.}, year={2007} }' chicago: Waitz, T., Michael Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer. “Crystalline ZnO with an Enhanced Surface Area Obtained by Nanocasting.” Applied Physics Letters, 2007. https://doi.org/10.1063/1.2713872. ieee: 'T. Waitz, M. Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer, “Crystalline ZnO with an enhanced surface area obtained by nanocasting,” Applied Physics Letters, Art. no. 123108, 2007, doi: 10.1063/1.2713872.' mla: Waitz, T., et al. “Crystalline ZnO with an Enhanced Surface Area Obtained by Nanocasting.” Applied Physics Letters, 123108, 2007, doi:10.1063/1.2713872. short: T. Waitz, M. Tiemann, P.J. Klar, J. Sann, J. Stehr, B.K. Meyer, Applied Physics Letters (2007). date_created: 2021-10-09T09:40:39Z date_updated: 2023-03-09T08:49:01Z department: - _id: '35' - _id: '2' - _id: '307' doi: 10.1063/1.2713872 extern: '1' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published quality_controlled: '1' status: public title: Crystalline ZnO with an enhanced surface area obtained by nanocasting type: journal_article user_id: '23547' year: '2007' ... --- _id: '39561' article_number: '013501' author: - first_name: M. full_name: Scharnberg, M. last_name: Scharnberg - first_name: V. full_name: Zaporojtchenko, V. last_name: Zaporojtchenko - first_name: R. full_name: Adelung, R. last_name: Adelung - first_name: F. full_name: Faupel, F. last_name: Faupel - first_name: C. full_name: Pannemann, C. last_name: Pannemann - first_name: T. full_name: Diekmann, T. last_name: Diekmann - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann citation: ama: Scharnberg M, Zaporojtchenko V, Adelung R, et al. Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. Applied Physics Letters. 2007;90(1). doi:10.1063/1.2426926 apa: Scharnberg, M., Zaporojtchenko, V., Adelung, R., Faupel, F., Pannemann, C., Diekmann, T., & Hilleringmann, U. (2007). Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. Applied Physics Letters, 90(1), Article 013501. https://doi.org/10.1063/1.2426926 bibtex: '@article{Scharnberg_Zaporojtchenko_Adelung_Faupel_Pannemann_Diekmann_Hilleringmann_2007, title={Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer}, volume={90}, DOI={10.1063/1.2426926}, number={1013501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Scharnberg, M. and Zaporojtchenko, V. and Adelung, R. and Faupel, F. and Pannemann, C. and Diekmann, T. and Hilleringmann, Ulrich}, year={2007} }' chicago: Scharnberg, M., V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T. Diekmann, and Ulrich Hilleringmann. “Tuning the Threshold Voltage of Organic Field-Effect Transistors by an Electret Encapsulating Layer.” Applied Physics Letters 90, no. 1 (2007). https://doi.org/10.1063/1.2426926. ieee: 'M. Scharnberg et al., “Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer,” Applied Physics Letters, vol. 90, no. 1, Art. no. 013501, 2007, doi: 10.1063/1.2426926.' mla: Scharnberg, M., et al. “Tuning the Threshold Voltage of Organic Field-Effect Transistors by an Electret Encapsulating Layer.” Applied Physics Letters, vol. 90, no. 1, 013501, AIP Publishing, 2007, doi:10.1063/1.2426926. short: M. Scharnberg, V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T. Diekmann, U. Hilleringmann, Applied Physics Letters 90 (2007). date_created: 2023-01-24T12:15:22Z date_updated: 2023-03-21T10:15:06Z department: - _id: '59' doi: 10.1063/1.2426926 intvolume: ' 90' issue: '1' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer type: journal_article user_id: '20179' volume: 90 year: '2007' ... --- _id: '7651' article_number: '031111' author: - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Kevin full_name: Hennessy, Kevin last_name: Hennessy - first_name: Elaine D. full_name: Haberer, Elaine D. last_name: Haberer - first_name: Rajat full_name: Sharma, Rajat last_name: Sharma - first_name: Yong-Seok full_name: Choi, Yong-Seok last_name: Choi - first_name: Kelly full_name: McGroddy, Kelly last_name: McGroddy - first_name: Stacia full_name: Keller, Stacia last_name: Keller - first_name: Steven P. full_name: DenBaars, Steven P. last_name: DenBaars - first_name: Shuji full_name: Nakamura, Shuji last_name: Nakamura - first_name: Evelyn L. full_name: Hu, Evelyn L. last_name: Hu citation: ama: Meier C, Hennessy K, Haberer ED, et al. Visible resonant modes in GaN-based photonic crystal membrane cavities. Applied Physics Letters. 2006;88(3). doi:10.1063/1.2166680 apa: Meier, C., Hennessy, K., Haberer, E. D., Sharma, R., Choi, Y.-S., McGroddy, K., … Hu, E. L. (2006). Visible resonant modes in GaN-based photonic crystal membrane cavities. Applied Physics Letters, 88(3). https://doi.org/10.1063/1.2166680 bibtex: '@article{Meier_Hennessy_Haberer_Sharma_Choi_McGroddy_Keller_DenBaars_Nakamura_Hu_2006, title={Visible resonant modes in GaN-based photonic crystal membrane cavities}, volume={88}, DOI={10.1063/1.2166680}, number={3031111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Meier, Cedrik and Hennessy, Kevin and Haberer, Elaine D. and Sharma, Rajat and Choi, Yong-Seok and McGroddy, Kelly and Keller, Stacia and DenBaars, Steven P. and Nakamura, Shuji and Hu, Evelyn L.}, year={2006} }' chicago: Meier, Cedrik, Kevin Hennessy, Elaine D. Haberer, Rajat Sharma, Yong-Seok Choi, Kelly McGroddy, Stacia Keller, Steven P. DenBaars, Shuji Nakamura, and Evelyn L. Hu. “Visible Resonant Modes in GaN-Based Photonic Crystal Membrane Cavities.” Applied Physics Letters 88, no. 3 (2006). https://doi.org/10.1063/1.2166680. ieee: C. Meier et al., “Visible resonant modes in GaN-based photonic crystal membrane cavities,” Applied Physics Letters, vol. 88, no. 3, 2006. mla: Meier, Cedrik, et al. “Visible Resonant Modes in GaN-Based Photonic Crystal Membrane Cavities.” Applied Physics Letters, vol. 88, no. 3, 031111, AIP Publishing, 2006, doi:10.1063/1.2166680. short: C. Meier, K. Hennessy, E.D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy, S. Keller, S.P. DenBaars, S. Nakamura, E.L. Hu, Applied Physics Letters 88 (2006). date_created: 2019-02-13T11:41:17Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2166680 extern: '1' intvolume: ' 88' issue: '3' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Visible resonant modes in GaN-based photonic crystal membrane cavities type: journal_article user_id: '20798' volume: 88 year: '2006' ... --- _id: '8648' article_number: '082110' author: - first_name: M. full_name: Knop, M. last_name: Knop - first_name: U. full_name: Wieser, U. last_name: Wieser - first_name: U. full_name: Kunze, U. last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Knop M, Wieser U, Kunze U, Reuter D, Wieck AD. Ballistic rectification in an asymmetric mesoscopic cross junction. Applied Physics Letters. 2006. doi:10.1063/1.2179618 apa: Knop, M., Wieser, U., Kunze, U., Reuter, D., & Wieck, A. D. (2006). Ballistic rectification in an asymmetric mesoscopic cross junction. Applied Physics Letters. https://doi.org/10.1063/1.2179618 bibtex: '@article{Knop_Wieser_Kunze_Reuter_Wieck_2006, title={Ballistic rectification in an asymmetric mesoscopic cross junction}, DOI={10.1063/1.2179618}, number={082110}, journal={Applied Physics Letters}, author={Knop, M. and Wieser, U. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2006} }' chicago: Knop, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Ballistic Rectification in an Asymmetric Mesoscopic Cross Junction.” Applied Physics Letters, 2006. https://doi.org/10.1063/1.2179618. ieee: M. Knop, U. Wieser, U. Kunze, D. Reuter, and A. D. Wieck, “Ballistic rectification in an asymmetric mesoscopic cross junction,” Applied Physics Letters, 2006. mla: Knop, M., et al. “Ballistic Rectification in an Asymmetric Mesoscopic Cross Junction.” Applied Physics Letters, 082110, 2006, doi:10.1063/1.2179618. short: M. Knop, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2006). date_created: 2019-03-27T07:54:36Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2179618 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Ballistic rectification in an asymmetric mesoscopic cross junction type: journal_article user_id: '42514' year: '2006' ... --- _id: '8654' article_number: '121115' author: - first_name: R. full_name: Schmidt, R. last_name: Schmidt - first_name: U. full_name: Scholz, U. last_name: Scholz - first_name: M. full_name: Vitzethum, M. last_name: Vitzethum - first_name: R. full_name: Fix, R. last_name: Fix - first_name: C. full_name: Metzner, C. last_name: Metzner - first_name: P. full_name: Kailuweit, P. last_name: Kailuweit - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. full_name: Wieck, A. last_name: Wieck - first_name: M. C. full_name: Hübner, M. C. last_name: Hübner - first_name: S. full_name: Stufler, S. last_name: Stufler - first_name: A. full_name: Zrenner, A. last_name: Zrenner - first_name: S. full_name: Malzer, S. last_name: Malzer - first_name: G. H. full_name: Döhler, G. H. last_name: Döhler citation: ama: Schmidt R, Scholz U, Vitzethum M, et al. Fabrication of genuine single-quantum-dot light-emitting diodes. Applied Physics Letters. 2006. doi:10.1063/1.2188057 apa: Schmidt, R., Scholz, U., Vitzethum, M., Fix, R., Metzner, C., Kailuweit, P., … Döhler, G. H. (2006). Fabrication of genuine single-quantum-dot light-emitting diodes. Applied Physics Letters. https://doi.org/10.1063/1.2188057 bibtex: '@article{Schmidt_Scholz_Vitzethum_Fix_Metzner_Kailuweit_Reuter_Wieck_Hübner_Stufler_et al._2006, title={Fabrication of genuine single-quantum-dot light-emitting diodes}, DOI={10.1063/1.2188057}, number={121115}, journal={Applied Physics Letters}, author={Schmidt, R. and Scholz, U. and Vitzethum, M. and Fix, R. and Metzner, C. and Kailuweit, P. and Reuter, Dirk and Wieck, A. and Hübner, M. C. and Stufler, S. and et al.}, year={2006} }' chicago: Schmidt, R., U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, Dirk Reuter, et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting Diodes.” Applied Physics Letters, 2006. https://doi.org/10.1063/1.2188057. ieee: R. Schmidt et al., “Fabrication of genuine single-quantum-dot light-emitting diodes,” Applied Physics Letters, 2006. mla: Schmidt, R., et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting Diodes.” Applied Physics Letters, 121115, 2006, doi:10.1063/1.2188057. short: R. Schmidt, U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, D. Reuter, A. Wieck, M.C. Hübner, S. Stufler, A. Zrenner, S. Malzer, G.H. Döhler, Applied Physics Letters (2006). date_created: 2019-03-27T08:21:39Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2188057 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Fabrication of genuine single-quantum-dot light-emitting diodes type: journal_article user_id: '42514' year: '2006' ... --- _id: '8665' article_number: '123105' author: - first_name: V. full_name: Stavarache, V. last_name: Stavarache - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: M. full_name: Schwab, M. last_name: Schwab - first_name: D. R. full_name: Yakovlev, D. R. last_name: Yakovlev - first_name: R. full_name: Oulton, R. last_name: Oulton - first_name: M. full_name: Bayer, M. last_name: Bayer citation: ama: Stavarache V, Reuter D, Wieck AD, et al. Control of quantum dot excitons by lateral electric fields. Applied Physics Letters. 2006. doi:10.1063/1.2345233 apa: Stavarache, V., Reuter, D., Wieck, A. D., Schwab, M., Yakovlev, D. R., Oulton, R., & Bayer, M. (2006). Control of quantum dot excitons by lateral electric fields. Applied Physics Letters. https://doi.org/10.1063/1.2345233 bibtex: '@article{Stavarache_Reuter_Wieck_Schwab_Yakovlev_Oulton_Bayer_2006, title={Control of quantum dot excitons by lateral electric fields}, DOI={10.1063/1.2345233}, number={123105}, journal={Applied Physics Letters}, author={Stavarache, V. and Reuter, Dirk and Wieck, A. D. and Schwab, M. and Yakovlev, D. R. and Oulton, R. and Bayer, M.}, year={2006} }' chicago: Stavarache, V., Dirk Reuter, A. D. Wieck, M. Schwab, D. R. Yakovlev, R. Oulton, and M. Bayer. “Control of Quantum Dot Excitons by Lateral Electric Fields.” Applied Physics Letters, 2006. https://doi.org/10.1063/1.2345233. ieee: V. Stavarache et al., “Control of quantum dot excitons by lateral electric fields,” Applied Physics Letters, 2006. mla: Stavarache, V., et al. “Control of Quantum Dot Excitons by Lateral Electric Fields.” Applied Physics Letters, 123105, 2006, doi:10.1063/1.2345233. short: V. Stavarache, D. Reuter, A.D. Wieck, M. Schwab, D.R. Yakovlev, R. Oulton, M. Bayer, Applied Physics Letters (2006). date_created: 2019-03-27T08:39:57Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2345233 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Control of quantum dot excitons by lateral electric fields type: journal_article user_id: '42514' year: '2006' ... --- _id: '8671' article_number: '231101' author: - first_name: P. E. full_name: Hohage, P. E. last_name: Hohage - first_name: G. full_name: Bacher, G. last_name: Bacher - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Hohage PE, Bacher G, Reuter D, Wieck AD. Coherent spin oscillations in bulk GaAs at room temperature. Applied Physics Letters. 2006. doi:10.1063/1.2398909 apa: Hohage, P. E., Bacher, G., Reuter, D., & Wieck, A. D. (2006). Coherent spin oscillations in bulk GaAs at room temperature. Applied Physics Letters. https://doi.org/10.1063/1.2398909 bibtex: '@article{Hohage_Bacher_Reuter_Wieck_2006, title={Coherent spin oscillations in bulk GaAs at room temperature}, DOI={10.1063/1.2398909}, number={231101}, journal={Applied Physics Letters}, author={Hohage, P. E. and Bacher, G. and Reuter, Dirk and Wieck, A. D.}, year={2006} }' chicago: Hohage, P. E., G. Bacher, Dirk Reuter, and A. D. Wieck. “Coherent Spin Oscillations in Bulk GaAs at Room Temperature.” Applied Physics Letters, 2006. https://doi.org/10.1063/1.2398909. ieee: P. E. Hohage, G. Bacher, D. Reuter, and A. D. Wieck, “Coherent spin oscillations in bulk GaAs at room temperature,” Applied Physics Letters, 2006. mla: Hohage, P. E., et al. “Coherent Spin Oscillations in Bulk GaAs at Room Temperature.” Applied Physics Letters, 231101, 2006, doi:10.1063/1.2398909. short: P.E. Hohage, G. Bacher, D. Reuter, A.D. Wieck, Applied Physics Letters (2006). date_created: 2019-03-27T09:15:03Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2398909 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Coherent spin oscillations in bulk GaAs at room temperature type: journal_article user_id: '42514' year: '2006' ... --- _id: '29684' article_number: '012502' author: - first_name: Andy full_name: Thomas, Andy last_name: Thomas - first_name: Dirk full_name: Meyners, Dirk last_name: Meyners - first_name: Daniel full_name: Ebke, Daniel last_name: Ebke - first_name: Ning-Ning full_name: Liu, Ning-Ning last_name: Liu - first_name: Marc full_name: Sacher, Marc id: '26883' last_name: Sacher - first_name: Jan full_name: Schmalhorst, Jan last_name: Schmalhorst - first_name: Günter full_name: Reiss, Günter last_name: Reiss - first_name: Hubert full_name: Ebert, Hubert last_name: Ebert - first_name: Andreas full_name: Hütten, Andreas last_name: Hütten citation: ama: Thomas A, Meyners D, Ebke D, et al. Inverted spin polarization of Heusler alloys for spintronic devices. Applied Physics Letters. 2006;89(1). doi:10.1063/1.2219333 apa: Thomas, A., Meyners, D., Ebke, D., Liu, N.-N., Sacher, M., Schmalhorst, J., Reiss, G., Ebert, H., & Hütten, A. (2006). Inverted spin polarization of Heusler alloys for spintronic devices. Applied Physics Letters, 89(1), Article 012502. https://doi.org/10.1063/1.2219333 bibtex: '@article{Thomas_Meyners_Ebke_Liu_Sacher_Schmalhorst_Reiss_Ebert_Hütten_2006, title={Inverted spin polarization of Heusler alloys for spintronic devices}, volume={89}, DOI={10.1063/1.2219333}, number={1012502}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Thomas, Andy and Meyners, Dirk and Ebke, Daniel and Liu, Ning-Ning and Sacher, Marc and Schmalhorst, Jan and Reiss, Günter and Ebert, Hubert and Hütten, Andreas}, year={2006} }' chicago: Thomas, Andy, Dirk Meyners, Daniel Ebke, Ning-Ning Liu, Marc Sacher, Jan Schmalhorst, Günter Reiss, Hubert Ebert, and Andreas Hütten. “Inverted Spin Polarization of Heusler Alloys for Spintronic Devices.” Applied Physics Letters 89, no. 1 (2006). https://doi.org/10.1063/1.2219333. ieee: 'A. Thomas et al., “Inverted spin polarization of Heusler alloys for spintronic devices,” Applied Physics Letters, vol. 89, no. 1, Art. no. 012502, 2006, doi: 10.1063/1.2219333.' mla: Thomas, Andy, et al. “Inverted Spin Polarization of Heusler Alloys for Spintronic Devices.” Applied Physics Letters, vol. 89, no. 1, 012502, AIP Publishing, 2006, doi:10.1063/1.2219333. short: A. Thomas, D. Meyners, D. Ebke, N.-N. Liu, M. Sacher, J. Schmalhorst, G. Reiss, H. Ebert, A. Hütten, Applied Physics Letters 89 (2006). date_created: 2022-01-31T10:16:33Z date_updated: 2022-01-31T10:16:56Z department: - _id: '15' - _id: '576' doi: 10.1063/1.2219333 extern: '1' intvolume: ' 89' issue: '1' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Inverted spin polarization of Heusler alloys for spintronic devices type: journal_article user_id: '26883' volume: 89 year: '2006' ... --- _id: '7653' article_number: '243101' author: - first_name: Y.-S. full_name: Choi, Y.-S. last_name: Choi - first_name: K. full_name: Hennessy, K. last_name: Hennessy - first_name: R. full_name: Sharma, R. last_name: Sharma - first_name: E. full_name: Haberer, E. last_name: Haberer - first_name: Y. full_name: Gao, Y. last_name: Gao - first_name: S. P. full_name: DenBaars, S. P. last_name: DenBaars - first_name: S. full_name: Nakamura, S. last_name: Nakamura - first_name: E. L. full_name: Hu, E. L. last_name: Hu - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 citation: ama: Choi Y-S, Hennessy K, Sharma R, et al. GaN blue photonic crystal membrane nanocavities. Applied Physics Letters. 2005;87(24). doi:10.1063/1.2147713 apa: Choi, Y.-S., Hennessy, K., Sharma, R., Haberer, E., Gao, Y., DenBaars, S. P., … Meier, C. (2005). GaN blue photonic crystal membrane nanocavities. Applied Physics Letters, 87(24). https://doi.org/10.1063/1.2147713 bibtex: '@article{Choi_Hennessy_Sharma_Haberer_Gao_DenBaars_Nakamura_Hu_Meier_2005, title={GaN blue photonic crystal membrane nanocavities}, volume={87}, DOI={10.1063/1.2147713}, number={24243101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Choi, Y.-S. and Hennessy, K. and Sharma, R. and Haberer, E. and Gao, Y. and DenBaars, S. P. and Nakamura, S. and Hu, E. L. and Meier, Cedrik}, year={2005} }' chicago: Choi, Y.-S., K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars, S. Nakamura, E. L. Hu, and Cedrik Meier. “GaN Blue Photonic Crystal Membrane Nanocavities.” Applied Physics Letters 87, no. 24 (2005). https://doi.org/10.1063/1.2147713. ieee: Y.-S. Choi et al., “GaN blue photonic crystal membrane nanocavities,” Applied Physics Letters, vol. 87, no. 24, 2005. mla: Choi, Y. S., et al. “GaN Blue Photonic Crystal Membrane Nanocavities.” Applied Physics Letters, vol. 87, no. 24, 243101, AIP Publishing, 2005, doi:10.1063/1.2147713. short: Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S.P. DenBaars, S. Nakamura, E.L. Hu, C. Meier, Applied Physics Letters 87 (2005). date_created: 2019-02-13T11:47:23Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2147713 extern: '1' intvolume: ' 87' issue: '24' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: GaN blue photonic crystal membrane nanocavities type: journal_article user_id: '20798' volume: 87 year: '2005' ... --- _id: '7654' article_number: '163117' author: - first_name: Stephan full_name: Lüttjohann, Stephan last_name: Lüttjohann - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Axel full_name: Lorke, Axel last_name: Lorke - first_name: Dirk full_name: Reuter, Dirk last_name: Reuter - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck citation: ama: Lüttjohann S, Meier C, Lorke A, Reuter D, Wieck AD. Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra. Applied Physics Letters. 2005;87(16). doi:10.1063/1.2112192 apa: Lüttjohann, S., Meier, C., Lorke, A., Reuter, D., & Wieck, A. D. (2005). Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra. Applied Physics Letters, 87(16). https://doi.org/10.1063/1.2112192 bibtex: '@article{Lüttjohann_Meier_Lorke_Reuter_Wieck_2005, title={Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra}, volume={87}, DOI={10.1063/1.2112192}, number={16163117}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lüttjohann, Stephan and Meier, Cedrik and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}, year={2005} }' chicago: Lüttjohann, Stephan, Cedrik Meier, Axel Lorke, Dirk Reuter, and Andreas D. Wieck. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence and Capacitance-Voltage Spectra.” Applied Physics Letters 87, no. 16 (2005). https://doi.org/10.1063/1.2112192. ieee: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, and A. D. Wieck, “Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra,” Applied Physics Letters, vol. 87, no. 16, 2005. mla: Lüttjohann, Stephan, et al. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence and Capacitance-Voltage Spectra.” Applied Physics Letters, vol. 87, no. 16, 163117, AIP Publishing, 2005, doi:10.1063/1.2112192. short: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters 87 (2005). date_created: 2019-02-13T11:48:22Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2112192 extern: '1' intvolume: ' 87' issue: '16' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra type: journal_article user_id: '20798' volume: 87 year: '2005' ... --- _id: '7655' article_number: '101107' author: - first_name: A. full_name: David, A. last_name: David - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: R. full_name: Sharma, R. last_name: Sharma - first_name: F. S. full_name: Diana, F. S. last_name: Diana - first_name: S. P. full_name: DenBaars, S. P. last_name: DenBaars - first_name: E. full_name: Hu, E. last_name: Hu - first_name: S. full_name: Nakamura, S. last_name: Nakamura - first_name: C. full_name: Weisbuch, C. last_name: Weisbuch - first_name: H. full_name: Benisty, H. last_name: Benisty citation: ama: David A, Meier C, Sharma R, et al. Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction. Applied Physics Letters. 2005;87(10). doi:10.1063/1.2039987 apa: David, A., Meier, C., Sharma, R., Diana, F. S., DenBaars, S. P., Hu, E., … Benisty, H. (2005). Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction. Applied Physics Letters, 87(10). https://doi.org/10.1063/1.2039987 bibtex: '@article{David_Meier_Sharma_Diana_DenBaars_Hu_Nakamura_Weisbuch_Benisty_2005, title={Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction}, volume={87}, DOI={10.1063/1.2039987}, number={10101107}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={David, A. and Meier, Cedrik and Sharma, R. and Diana, F. S. and DenBaars, S. P. and Hu, E. and Nakamura, S. and Weisbuch, C. and Benisty, H.}, year={2005} }' chicago: David, A., Cedrik Meier, R. Sharma, F. S. Diana, S. P. DenBaars, E. Hu, S. Nakamura, C. Weisbuch, and H. Benisty. “Photonic Bands in Two-Dimensionally Patterned Multimode GaN Waveguides for Light Extraction.” Applied Physics Letters 87, no. 10 (2005). https://doi.org/10.1063/1.2039987. ieee: A. David et al., “Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction,” Applied Physics Letters, vol. 87, no. 10, 2005. mla: David, A., et al. “Photonic Bands in Two-Dimensionally Patterned Multimode GaN Waveguides for Light Extraction.” Applied Physics Letters, vol. 87, no. 10, 101107, AIP Publishing, 2005, doi:10.1063/1.2039987. short: A. David, C. Meier, R. Sharma, F.S. Diana, S.P. DenBaars, E. Hu, S. Nakamura, C. Weisbuch, H. Benisty, Applied Physics Letters 87 (2005). date_created: 2019-02-13T11:48:57Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2039987 extern: '1' intvolume: ' 87' issue: '10' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction type: journal_article user_id: '20798' volume: 87 year: '2005' ... --- _id: '7656' article_number: '051107' author: - first_name: R. full_name: Sharma, R. last_name: Sharma - first_name: E. D. full_name: Haberer, E. D. last_name: Haberer - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: E. L. full_name: Hu, E. L. last_name: Hu - first_name: S. full_name: Nakamura, S. last_name: Nakamura citation: ama: Sharma R, Haberer ED, Meier C, Hu EL, Nakamura S. Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching. Applied Physics Letters. 2005;87(5). doi:10.1063/1.2008380 apa: Sharma, R., Haberer, E. D., Meier, C., Hu, E. L., & Nakamura, S. (2005). Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching. Applied Physics Letters, 87(5). https://doi.org/10.1063/1.2008380 bibtex: '@article{Sharma_Haberer_Meier_Hu_Nakamura_2005, title={Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching}, volume={87}, DOI={10.1063/1.2008380}, number={5051107}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Sharma, R. and Haberer, E. D. and Meier, Cedrik and Hu, E. L. and Nakamura, S.}, year={2005} }' chicago: Sharma, R., E. D. Haberer, Cedrik Meier, E. L. Hu, and S. Nakamura. “Vertically Oriented GaN-Based Air-Gap Distributed Bragg Reflector Structure Fabricated Using Band-Gap-Selective Photoelectrochemical Etching.” Applied Physics Letters 87, no. 5 (2005). https://doi.org/10.1063/1.2008380. ieee: R. Sharma, E. D. Haberer, C. Meier, E. L. Hu, and S. Nakamura, “Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching,” Applied Physics Letters, vol. 87, no. 5, 2005. mla: Sharma, R., et al. “Vertically Oriented GaN-Based Air-Gap Distributed Bragg Reflector Structure Fabricated Using Band-Gap-Selective Photoelectrochemical Etching.” Applied Physics Letters, vol. 87, no. 5, 051107, AIP Publishing, 2005, doi:10.1063/1.2008380. short: R. Sharma, E.D. Haberer, C. Meier, E.L. Hu, S. Nakamura, Applied Physics Letters 87 (2005). date_created: 2019-02-13T11:50:37Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2008380 extern: '1' intvolume: ' 87' issue: '5' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching type: journal_article user_id: '20798' volume: 87 year: '2005' ... --- _id: '7659' article_number: '031901' author: - first_name: Arpan full_name: Chakraborty, Arpan last_name: Chakraborty - first_name: Stacia full_name: Keller, Stacia last_name: Keller - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Benjamin A. full_name: Haskell, Benjamin A. last_name: Haskell - first_name: Salka full_name: Keller, Salka last_name: Keller - first_name: Patrick full_name: Waltereit, Patrick last_name: Waltereit - first_name: Steven P. full_name: DenBaars, Steven P. last_name: DenBaars - first_name: Shuji full_name: Nakamura, Shuji last_name: Nakamura - first_name: James S. full_name: Speck, James S. last_name: Speck - first_name: Umesh K. full_name: Mishra, Umesh K. last_name: Mishra citation: ama: Chakraborty A, Keller S, Meier C, et al. Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied Physics Letters. 2005;86(3). doi:10.1063/1.1851007 apa: Chakraborty, A., Keller, S., Meier, C., Haskell, B. A., Keller, S., Waltereit, P., … Mishra, U. K. (2005). Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied Physics Letters, 86(3). https://doi.org/10.1063/1.1851007 bibtex: '@article{Chakraborty_Keller_Meier_Haskell_Keller_Waltereit_DenBaars_Nakamura_Speck_Mishra_2005, title={Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN}, volume={86}, DOI={10.1063/1.1851007}, number={3031901}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chakraborty, Arpan and Keller, Stacia and Meier, Cedrik and Haskell, Benjamin A. and Keller, Salka and Waltereit, Patrick and DenBaars, Steven P. and Nakamura, Shuji and Speck, James S. and Mishra, Umesh K.}, year={2005} }' chicago: Chakraborty, Arpan, Stacia Keller, Cedrik Meier, Benjamin A. Haskell, Salka Keller, Patrick Waltereit, Steven P. DenBaars, Shuji Nakamura, James S. Speck, and Umesh K. Mishra. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple Quantum Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” Applied Physics Letters 86, no. 3 (2005). https://doi.org/10.1063/1.1851007. ieee: A. Chakraborty et al., “Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN,” Applied Physics Letters, vol. 86, no. 3, 2005. mla: Chakraborty, Arpan, et al. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple Quantum Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” Applied Physics Letters, vol. 86, no. 3, 031901, AIP Publishing, 2005, doi:10.1063/1.1851007. short: A. Chakraborty, S. Keller, C. Meier, B.A. Haskell, S. Keller, P. Waltereit, S.P. DenBaars, S. Nakamura, J.S. Speck, U.K. Mishra, Applied Physics Letters 86 (2005). date_created: 2019-02-13T12:27:05Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.1851007 extern: '1' intvolume: ' 86' issue: '3' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN type: journal_article user_id: '20798' volume: 86 year: '2005' ... --- _id: '8679' article_number: '162110' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: C. full_name: Werner, C. last_name: Werner - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: S. full_name: Petrosyan, S. last_name: Petrosyan citation: ama: Reuter D, Werner C, Wieck AD, Petrosyan S. Depletion characteristics of two-dimensional lateral p‐n-junctions. Applied Physics Letters. 2005. doi:10.1063/1.1897829 apa: Reuter, D., Werner, C., Wieck, A. D., & Petrosyan, S. (2005). Depletion characteristics of two-dimensional lateral p‐n-junctions. Applied Physics Letters. https://doi.org/10.1063/1.1897829 bibtex: '@article{Reuter_Werner_Wieck_Petrosyan_2005, title={Depletion characteristics of two-dimensional lateral p‐n-junctions}, DOI={10.1063/1.1897829}, number={162110}, journal={Applied Physics Letters}, author={Reuter, Dirk and Werner, C. and Wieck, A. D. and Petrosyan, S.}, year={2005} }' chicago: Reuter, Dirk, C. Werner, A. D. Wieck, and S. Petrosyan. “Depletion Characteristics of Two-Dimensional Lateral P‐n-Junctions.” Applied Physics Letters, 2005. https://doi.org/10.1063/1.1897829. ieee: D. Reuter, C. Werner, A. D. Wieck, and S. Petrosyan, “Depletion characteristics of two-dimensional lateral p‐n-junctions,” Applied Physics Letters, 2005. mla: Reuter, Dirk, et al. “Depletion Characteristics of Two-Dimensional Lateral P‐n-Junctions.” Applied Physics Letters, 162110, 2005, doi:10.1063/1.1897829. short: D. Reuter, C. Werner, A.D. Wieck, S. Petrosyan, Applied Physics Letters (2005). date_created: 2019-03-27T09:32:08Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1897829 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Depletion characteristics of two-dimensional lateral p‐n-junctions type: journal_article user_id: '42514' year: '2005' ... --- _id: '8683' article_number: '042104' author: - first_name: T. full_name: Müller, T. last_name: Müller - first_name: A. full_name: Würtz, A. last_name: Würtz - first_name: A. full_name: Lorke, A. last_name: Lorke - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Müller T, Würtz A, Lorke A, Reuter D, Wieck AD. Wave-form sampling using a driven electron ratchet in a two-dimensional electron system. Applied Physics Letters. 2005. doi:10.1063/1.2001740 apa: Müller, T., Würtz, A., Lorke, A., Reuter, D., & Wieck, A. D. (2005). Wave-form sampling using a driven electron ratchet in a two-dimensional electron system. Applied Physics Letters. https://doi.org/10.1063/1.2001740 bibtex: '@article{Müller_Würtz_Lorke_Reuter_Wieck_2005, title={Wave-form sampling using a driven electron ratchet in a two-dimensional electron system}, DOI={10.1063/1.2001740}, number={042104}, journal={Applied Physics Letters}, author={Müller, T. and Würtz, A. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2005} }' chicago: Müller, T., A. Würtz, A. Lorke, Dirk Reuter, and A. D. Wieck. “Wave-Form Sampling Using a Driven Electron Ratchet in a Two-Dimensional Electron System.” Applied Physics Letters, 2005. https://doi.org/10.1063/1.2001740. ieee: T. Müller, A. Würtz, A. Lorke, D. Reuter, and A. D. Wieck, “Wave-form sampling using a driven electron ratchet in a two-dimensional electron system,” Applied Physics Letters, 2005. mla: Müller, T., et al. “Wave-Form Sampling Using a Driven Electron Ratchet in a Two-Dimensional Electron System.” Applied Physics Letters, 042104, 2005, doi:10.1063/1.2001740. short: T. Müller, A. Würtz, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters (2005). date_created: 2019-03-27T10:19:20Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2001740 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Wave-form sampling using a driven electron ratchet in a two-dimensional electron system type: journal_article user_id: '42514' year: '2005' ...