---
_id: '39649'
abstract:
- lang: eng
  text: Metal-semiconductor and junction n-channel field-effect transistors (MESFETs
    and JFETs) have been fabricated on glass substrates using room temperature deposited
    amorphous zinc-tin oxide (ZTO) channel layers. Characteristics of transistors
    and inverter circuits are compared. Best FET devices exhibit ON-to- OFF current
    ratios over eight orders of magnitude, subthreshold swings as low as 250 mV/dec
    and field-effect mobilities of 5 cm 2 /Vs. Furthermore, all devices show long-term
    stability over a period of more than 200 days. Inverters fabricated using either
    MESFETs or JFETs exhibit remarkable peak gain magnitude values of 350 and voltage
    uncertainty levels as low as 260 mV for an operating voltage of 5 V. A Schottky
    diode FET logic (SDFL) approach is applied to shift the switching voltage which
    is a requirement for cascading of inverters for realization of ring oscillators.
author:
- first_name: Oliver
  full_name: Lahr, Oliver
  last_name: Lahr
- first_name: Zhipeng
  full_name: Zhang, Zhipeng
  last_name: Zhang
- first_name: Frank
  full_name: Grotjahn, Frank
  last_name: Grotjahn
- first_name: Peter
  full_name: Schlupp, Peter
  last_name: Schlupp
- first_name: Sofie
  full_name: Vogt, Sofie
  last_name: Vogt
- first_name: Holger
  full_name: von Wenckstern, Holger
  last_name: von Wenckstern
- first_name: Andreas
  full_name: Thiede, Andreas
  id: '538'
  last_name: Thiede
- first_name: Marius
  full_name: Grundmann, Marius
  last_name: Grundmann
citation:
  ama: Lahr O, Zhang Z, Grotjahn F, et al. Full-Swing, High-Gain Inverters Based on
    ZnSnO JFETs and MESFETs. <i>IEEE Transactions on Electron Devices</i>. 2019;66(8):3376-3381.
    doi:<a href="https://doi.org/10.1109/ted.2019.2922696">10.1109/ted.2019.2922696</a>
  apa: Lahr, O., Zhang, Z., Grotjahn, F., Schlupp, P., Vogt, S., von Wenckstern, H.,
    Thiede, A., &#38; Grundmann, M. (2019). Full-Swing, High-Gain Inverters Based
    on ZnSnO JFETs and MESFETs. <i>IEEE Transactions on Electron Devices</i>, <i>66</i>(8),
    3376–3381. <a href="https://doi.org/10.1109/ted.2019.2922696">https://doi.org/10.1109/ted.2019.2922696</a>
  bibtex: '@article{Lahr_Zhang_Grotjahn_Schlupp_Vogt_von Wenckstern_Thiede_Grundmann_2019,
    title={Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs}, volume={66},
    DOI={<a href="https://doi.org/10.1109/ted.2019.2922696">10.1109/ted.2019.2922696</a>},
    number={8}, journal={IEEE Transactions on Electron Devices}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Lahr, Oliver and Zhang,
    Zhipeng and Grotjahn, Frank and Schlupp, Peter and Vogt, Sofie and von Wenckstern,
    Holger and Thiede, Andreas and Grundmann, Marius}, year={2019}, pages={3376–3381}
    }'
  chicago: 'Lahr, Oliver, Zhipeng Zhang, Frank Grotjahn, Peter Schlupp, Sofie Vogt,
    Holger von Wenckstern, Andreas Thiede, and Marius Grundmann. “Full-Swing, High-Gain
    Inverters Based on ZnSnO JFETs and MESFETs.” <i>IEEE Transactions on Electron
    Devices</i> 66, no. 8 (2019): 3376–81. <a href="https://doi.org/10.1109/ted.2019.2922696">https://doi.org/10.1109/ted.2019.2922696</a>.'
  ieee: 'O. Lahr <i>et al.</i>, “Full-Swing, High-Gain Inverters Based on ZnSnO JFETs
    and MESFETs,” <i>IEEE Transactions on Electron Devices</i>, vol. 66, no. 8, pp.
    3376–3381, 2019, doi: <a href="https://doi.org/10.1109/ted.2019.2922696">10.1109/ted.2019.2922696</a>.'
  mla: Lahr, Oliver, et al. “Full-Swing, High-Gain Inverters Based on ZnSnO JFETs
    and MESFETs.” <i>IEEE Transactions on Electron Devices</i>, vol. 66, no. 8, Institute
    of Electrical and Electronics Engineers (IEEE), 2019, pp. 3376–81, doi:<a href="https://doi.org/10.1109/ted.2019.2922696">10.1109/ted.2019.2922696</a>.
  short: O. Lahr, Z. Zhang, F. Grotjahn, P. Schlupp, S. Vogt, H. von Wenckstern, A.
    Thiede, M. Grundmann, IEEE Transactions on Electron Devices 66 (2019) 3376–3381.
date_created: 2023-01-24T17:20:18Z
date_updated: 2023-01-24T17:21:37Z
department:
- _id: '51'
doi: 10.1109/ted.2019.2922696
intvolume: '        66'
issue: '8'
keyword:
- Electrical and Electronic Engineering
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 3376-3381
publication: IEEE Transactions on Electron Devices
publication_identifier:
  issn:
  - 0018-9383
  - 1557-9646
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs
type: journal_article
user_id: '158'
volume: 66
year: '2019'
...
---
_id: '39904'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: 'Hilleringmann U, Goser K. Optoelectronic system integration on silicon: waveguides,
    photodetectors, and VLSI CMOS circuits on one chip. <i>IEEE Transactions on Electron
    Devices</i>. 2002;42(5):841-846. doi:<a href="https://doi.org/10.1109/16.381978">10.1109/16.381978</a>'
  apa: 'Hilleringmann, U., &#38; Goser, K. (2002). Optoelectronic system integration
    on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip. <i>IEEE
    Transactions on Electron Devices</i>, <i>42</i>(5), 841–846. <a href="https://doi.org/10.1109/16.381978">https://doi.org/10.1109/16.381978</a>'
  bibtex: '@article{Hilleringmann_Goser_2002, title={Optoelectronic system integration
    on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip}, volume={42},
    DOI={<a href="https://doi.org/10.1109/16.381978">10.1109/16.381978</a>}, number={5},
    journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical
    and Electronics Engineers (IEEE)}, author={Hilleringmann, Ulrich and Goser, K.},
    year={2002}, pages={841–846} }'
  chicago: 'Hilleringmann, Ulrich, and K. Goser. “Optoelectronic System Integration
    on Silicon: Waveguides, Photodetectors, and VLSI CMOS Circuits on One Chip.” <i>IEEE
    Transactions on Electron Devices</i> 42, no. 5 (2002): 841–46. <a href="https://doi.org/10.1109/16.381978">https://doi.org/10.1109/16.381978</a>.'
  ieee: 'U. Hilleringmann and K. Goser, “Optoelectronic system integration on silicon:
    waveguides, photodetectors, and VLSI CMOS circuits on one chip,” <i>IEEE Transactions
    on Electron Devices</i>, vol. 42, no. 5, pp. 841–846, 2002, doi: <a href="https://doi.org/10.1109/16.381978">10.1109/16.381978</a>.'
  mla: 'Hilleringmann, Ulrich, and K. Goser. “Optoelectronic System Integration on
    Silicon: Waveguides, Photodetectors, and VLSI CMOS Circuits on One Chip.” <i>IEEE
    Transactions on Electron Devices</i>, vol. 42, no. 5, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 841–46, doi:<a href="https://doi.org/10.1109/16.381978">10.1109/16.381978</a>.'
  short: U. Hilleringmann, K. Goser, IEEE Transactions on Electron Devices 42 (2002)
    841–846.
date_created: 2023-01-25T09:22:34Z
date_updated: 2023-03-21T09:51:52Z
department:
- _id: '59'
doi: 10.1109/16.381978
intvolume: '        42'
issue: '5'
keyword:
- Electrical and Electronic Engineering
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 841-846
publication: IEEE Transactions on Electron Devices
publication_identifier:
  issn:
  - 0018-9383
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: 'Optoelectronic system integration on silicon: waveguides, photodetectors,
  and VLSI CMOS circuits on one chip'
type: journal_article
user_id: '20179'
volume: 42
year: '2002'
...
---
_id: '39348'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.F.
  full_name: Goser, K.F.
  last_name: Goser
citation:
  ama: Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined
    50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306.
    doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis
    of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>,
    <i>45</i>(1), 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>
  bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of
    deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>},
    number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann,
    Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }'
  chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis
    of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>
    45, no. 1 (2002): 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of
    deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>,
    vol. 45, no. 1, pp. 299–306, 2002, doi: <a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.'
  mla: Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.”
    <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.
  short: J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron
    Devices 45 (2002) 299–306.
date_created: 2023-01-24T09:23:56Z
date_updated: 2023-03-21T09:45:40Z
department:
- _id: '59'
doi: 10.1109/16.658845
intvolume: '        45'
issue: '1'
keyword:
- Electrical and Electronic Engineering
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 299-306
publication: IEEE Transactions on Electron Devices
publication_identifier:
  issn:
  - 0018-9383
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: Matching analysis of deposition defined 50-nm MOSFET's
type: journal_article
user_id: '20179'
volume: 45
year: '2002'
...
---
_id: '39891'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.F.
  full_name: Goser, K.F.
  last_name: Goser
citation:
  ama: Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined
    50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306.
    doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis
    of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>,
    <i>45</i>(1), 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>
  bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of
    deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>},
    number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann,
    Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }'
  chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis
    of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>
    45, no. 1 (2002): 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of
    deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>,
    vol. 45, no. 1, pp. 299–306, 2002, doi: <a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.'
  mla: Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.”
    <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.
  short: J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron
    Devices 45 (2002) 299–306.
date_created: 2023-01-25T09:14:43Z
date_updated: 2023-03-21T09:58:01Z
department:
- _id: '59'
doi: 10.1109/16.658845
intvolume: '        45'
issue: '1'
keyword:
- Electrical and Electronic Engineering
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 299-306
publication: IEEE Transactions on Electron Devices
publication_identifier:
  issn:
  - 0018-9383
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: Matching analysis of deposition defined 50-nm MOSFET's
type: journal_article
user_id: '20179'
volume: 45
year: '2002'
...