@article{47955, abstract = {{Quasi-phase-matched grating structures in lithium niobate waveguides with sub-micrometer periodicities will benefit the development of short-wavelength nonlinear optical devices. Here, we report on the reproducible formation of periodically poled domains in x-cut single-crystalline thin-film lithium niobate with periodicities as short as 600 nm. Shaped single-voltage poling pulses were applied to electrode structures that were fabricated by a combination of electron-beam and direct-writing laser lithography. Evidence of successful poling with good quality was obtained through second-harmonic microscopy and piezoresponse force microscopy imaging. For the sub-micrometer period structures, we observed patterns with a double periodicity formed by domain interactions and features with sizes <200 nm.}}, author = {{Zhao, Jie and Rüsing, Michael and Roeper, Matthias and Eng, Lukas M. and Mookherjea, Shayan}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, keywords = {{General Physics and Astronomy}}, number = {{19}}, publisher = {{AIP Publishing}}, title = {{{Poling thin-film x-cut lithium niobate for quasi-phase matching with sub-micrometer periodicity}}}, doi = {{10.1063/1.5143266}}, volume = {{127}}, year = {{2020}}, } @article{59686, abstract = {{The monolithic growth of III–V materials directly on Si substrates provides a promising integration approach for passive and active silicon photonic integrated circuits but still faces great challenges in crystal quality due to misfit defect formation. Nano-ridge engineering is a new approach that enables the integration of III–V based devices on trench-patterned Si substrates with very high crystal quality. Using selective area growth, the III–V material is deposited into narrow trenches to reduce the dislocation defect density by aspect ratio trapping. The growth is continued out of the trench pattern and a box-shaped III–V nano-ridge is engineered by adjusting the growth parameters. A flat (001) GaAs nano-ridge surface enables the epitaxial integration of a common InGaAs/GaAs multi-quantum-well (MQW) structure as an optical gain medium to build a laser diode. In this study, a clear correlation is found between the photoluminescence (PL) lifetime, extracted from time-resolved photoluminescence (TRPL) measurements, with the InGaAs/GaAs nano-ridge size and defect density, which are both predefined by the nano-ridge related pattern trench width. Through the addition of an InGaP passivation layer, a MQW PL lifetime of up to 800 ps and 1000 ps is measured when pumped at 900 nm (only QWs were excited) and 800 nm (QWs + barrier excited), respectively. The addition of a bottom carrier blocking layer further increases this lifetime to ∼2.5ns (pumped at 800 nm), which clearly demonstrates the high crystal quality of the nano-ridge material. These TRPL measurements not only deliver quick and valuable feedback about the III–V material quality but also provide an important understanding for the heterostructure design and carrier confinement of the nano-ridge laser diode.}}, author = {{Shi, Yuting and Kreuzer, Lisa C. and Gerhardt, Nils Christopher and Pantouvaki, Marianna and Van Campenhout, Joris and Baryshnikova, Marina and Langer, Robert and Van Thourhout, Dries and Kunert, Bernardette}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{10}}, publisher = {{AIP Publishing}}, title = {{{Time-resolved photoluminescence characterization of InGaAs/GaAs nano-ridges monolithically grown on 300 mm Si substrates}}}, doi = {{10.1063/1.5139636}}, volume = {{127}}, year = {{2020}}, } @article{8646, author = {{Deppe, M. and Gerlach, J. W. and Shvarkov, S. and Rogalla, D. and Becker, H.-W. and Reuter, Dirk and As, Donat Josef}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, title = {{{Germanium doping of cubic GaN grown by molecular beam epitaxy}}}, doi = {{10.1063/1.5066095}}, year = {{2019}}, } @article{9698, author = {{Golla, C. and Weber, N. and Meier, Cedrik}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{7}}, title = {{{Zinc oxide based dielectric nanoantennas for efficient nonlinear frequency conversion}}}, doi = {{10.1063/1.5082720}}, volume = {{125}}, year = {{2019}}, } @article{9897, author = {{Protte, Maximilian and Weber, Nils and Golla, Christian and Zentgraf, Thomas and Meier, Cedrik}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, title = {{{Strong nonlinear optical response from ZnO by coupled and lattice-matched nanoantennas}}}, doi = {{10.1063/1.5093257}}, volume = {{125}}, year = {{2019}}, } @article{13965, author = {{Buß, J. H. and Schupp, T. and As, Donat Josef and Hägele, D. and Rudolph, J.}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, title = {{{Optical excitation density dependence of spin dynamics in bulk cubic GaN}}}, doi = {{10.1063/1.5123914}}, year = {{2019}}, } @article{47951, abstract = {{Thin film lithium niobate has been of great interest recently, and an understanding of periodically poled thin films is crucial for both fundamental physics and device developments. Second-harmonic (SH) microscopy allows for the noninvasive visualization and analysis of ferroelectric domain structures and walls. While the technique is well understood in bulk lithium niobate, SH microscopy in thin films is largely influenced by interfacial reflections and resonant enhancements, which depend on film thicknesses and substrate materials. We present a comprehensive analysis of SH microscopy in x-cut lithium niobate thin films, based on a full three-dimensional focus calculation and accounting for interface reflections. We show that the dominant signal in backreflection originates from a copropagating phase-matched process observed through reflections, rather than direct detection of the counterpropagating signal as in bulk samples. We simulate the SH signatures of domain structures by a simple model of the domain wall as an extensionless transition from a −χ(2) to a +χ(2) region. This allows us to explain the main observation of domain structures in the thin-film geometry, and, in particular, we show that the SH signal from thin poled films allows to unambiguously distinguish areas, which are completely or only partly inverted in depth.}}, author = {{Rüsing, Michael and Zhao, J. and Mookherjea, S.}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, keywords = {{General Physics and Astronomy}}, number = {{11}}, publisher = {{AIP Publishing}}, title = {{{Second harmonic microscopy of poled x-cut thin film lithium niobate: Understanding the contrast mechanism}}}, doi = {{10.1063/1.5113727}}, volume = {{126}}, year = {{2019}}, } @article{1327, author = {{Weber, N. and Hoffmann, S. P. and Albert, M. and Zentgraf, Thomas and Meier, Cedrik}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{10}}, publisher = {{AIP Publishing}}, title = {{{Efficient frequency conversion by combined photonic–plasmonic mode coupling}}}, doi = {{10.1063/1.5017010}}, volume = {{123}}, year = {{2018}}, } @article{22569, author = {{Layes, Vincent and Monje, Sascha and Corbella, Carles and Schulz-von der Gathen, Volker and von Keudell, Achim and de los Arcos de Pedro, Maria Teresa}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, title = {{{Composite targets in HiPIMS plasmas: Correlation of in-vacuum XPS characterization and optical plasma diagnostics}}}, doi = {{10.1063/1.4977820}}, year = {{2017}}, } @article{4815, author = {{Righetti, V. A. N. and Gratens, X. and Chitta, V. A. and de Godoy, M. P. F. and Rodrigues, A. D. and Abramof, E. and Dias, J. F. and Schikora, D. and As, Donat Josef and Lischka, K.}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{10}}, publisher = {{AIP Publishing}}, title = {{{Magnetic and structural properties of Fe-implanted cubic GaN}}}, doi = {{10.1063/1.4962275}}, volume = {{120}}, year = {{2016}}, } @article{4239, abstract = {{Confocal Raman spectroscopy is applied to identify ferroelectric domain structure sensitive phonon modes in potassium titanyl phosphate. Therefore, polarization-dependent measurements in various scattering configurations have been performed to characterize the fundamental Raman spectra of the material. The obtained spectra are discussed qualitatively based on an internal mode assignment. In the main part of this work, we have characterized z-cut periodically poled potassium titanyl phosphate in terms of polarity- and structure-sensitive phonon modes. Here, we find vibrations whose intensities are linked to the ferroelectric domain walls. We interpret this in terms of changes in the polarizability originating from strain induced by domain boundaries and the inner field distribution. Hence, a direct and 3D visualization of ferroelectric domain structures becomes possible in potassium titanyl phosphate.}}, author = {{Rüsing, Michael and Eigner, Christof and Mackwitz, P. and Berth, Gerhard and Silberhorn, Christine and Zrenner, Artur}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{4}}, publisher = {{AIP Publishing}}, title = {{{Identification of ferroelectric domain structure sensitive phonon modes in potassium titanyl phosphate: A fundamental study}}}, doi = {{10.1063/1.4940964}}, volume = {{119}}, year = {{2016}}, } @article{4820, author = {{Buß, J. H. and Schupp, T. and As, Donat Josef and Hägele, D. and Rudolph, J.}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{22}}, publisher = {{AIP Publishing}}, title = {{{Temperature dependence of the electron Landé g-factor in cubic GaN}}}, doi = {{10.1063/1.4937128}}, volume = {{118}}, year = {{2015}}, } @article{4825, author = {{Schaefer, A. and Buß, J. H. and Schupp, T. and Zado, A. and As, Donat Josef and Hägele, D. and Rudolph, J.}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{9}}, publisher = {{AIP Publishing}}, title = {{{Strain dependent electron spin dynamics in bulk cubic GaN}}}, doi = {{10.1063/1.4914069}}, volume = {{117}}, year = {{2015}}, } @article{1696, author = {{Bader, Christina A. and Zeuner, Franziska and Bader, Manuel H. W. and Zentgraf, Thomas and Meier, Cedrik}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{21}}, publisher = {{AIP Publishing}}, title = {{{Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators}}}, doi = {{10.1063/1.4936768}}, volume = {{118}}, year = {{2015}}, } @article{7232, author = {{Lo, Fang-Yuh and Huang, Cheng-De and Chou, Kai-Chieh and Guo, Jhong-Yu and Liu, Hsiang-Lin and Ney, Verena and Ney, Andreas and Shvarkov, Stepan and Pezzagna, Sébastien and Reuter, Dirk and Chia, Chi-Ta and Chern, Ming-Yau and Wieck, Andreas D. and Massies, Jean}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{4}}, publisher = {{AIP Publishing}}, title = {{{Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films}}}, doi = {{10.1063/1.4891226}}, volume = {{116}}, year = {{2014}}, } @article{23643, author = {{Will, J. and Gröschel, A. and Kot, D. and Schubert, M. A. and Bergmann, C. and Steinrück, Hans-Georg and Kissinger, G. and Magerl, A.}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, pages = {{073508}}, title = {{{Oxygen diffusivity in silicon derived from dynamical X-ray diffraction}}}, doi = {{10.1063/1.4792747}}, volume = {{7}}, year = {{2013}}, } @article{39715, author = {{Nordendorf, Gaby and Lorenz, Alexander and Hoischen, Andreas and Schmidtke, Jürgen and Kitzerow, Heinz-Siegfried and Wilkes, David and Wittek, Michael}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, keywords = {{General Physics and Astronomy}}, number = {{17}}, publisher = {{AIP Publishing}}, title = {{{Hysteresis and memory factor of the Kerr effect in blue phases}}}, doi = {{10.1063/1.4828477}}, volume = {{114}}, year = {{2013}}, } @article{22603, author = {{Prenzel, Marina and de los Arcos de Pedro, Maria Teresa and Kortmann, Annika and Winter, Jörg and von Keudell, Achim}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, title = {{{Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films}}}, doi = {{10.1063/1.4767383}}, year = {{2012}}, } @article{7719, author = {{Chen, Y. S. and Huang, J. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Bacher, G.}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{1}}, publisher = {{AIP Publishing}}, title = {{{Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil}}}, doi = {{10.1063/1.3530731}}, volume = {{109}}, year = {{2011}}, } @article{4146, abstract = {{The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {111} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, μ-Raman and cathodoluminescence spectroscopy.}}, author = {{Maria Kemper, Ricarda and Schupp, Thorsten and Häberlen, Maik and Niendorf, Thomas and Maier, Hans-Jürgen and Dempewolf, Anja and Bertram, Frank and Christen, Jürgen and Kirste, Ronny and Hoffmann, Axel and Lindner, Jörg and As, Donat}}, issn = {{0021-8979}}, journal = {{Journal of Applied Physics}}, number = {{12}}, publisher = {{AIP Publishing}}, title = {{{Anti-phase domains in cubic GaN}}}, doi = {{10.1063/1.3666050}}, volume = {{110}}, year = {{2011}}, }