@article{4146,
  abstract     = {{The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {111} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, μ-Raman and cathodoluminescence spectroscopy.}},
  author       = {{Maria Kemper, Ricarda and Schupp, Thorsten and Häberlen, Maik and Niendorf, Thomas and Maier, Hans-Jürgen and Dempewolf, Anja and Bertram, Frank and Christen, Jürgen and Kirste, Ronny and Hoffmann, Axel and Lindner, Jörg and As, Donat}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  number       = {{12}},
  publisher    = {{AIP Publishing}},
  title        = {{{Anti-phase domains in cubic GaN}}},
  doi          = {{10.1063/1.3666050}},
  volume       = {{110}},
  year         = {{2011}},
}

@article{7985,
  author       = {{Schuster, E. and Brand, R. A. and Stromberg, F. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Wende, H. and Keune, W.}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  number       = {{6}},
  publisher    = {{AIP Publishing}},
  title        = {{{Epitaxial growth and interfacial magnetism of spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype system}}},
  doi          = {{10.1063/1.3476265}},
  volume       = {{108}},
  year         = {{2010}},
}

@article{4202,
  abstract     = {{Unintentional doping in nonpolar a-plane 
112¯0 gallium nitride 
GaN grown on r-plane 
11¯02
sapphire using a three-dimensional 
3D–two-dimensional 
2D growth method has been
characterized. For both 2D only and 3D–2D growth, the presence of an unintentionally doped region
adjacent to the GaN/sapphire interface is observed by scanning capacitance microscopy 
SCM. The
average width of this unintentionally doped layer is found to increase with increasing 3D growth
time. By using an intentionally doped GaN:Si staircase structure for calibration, it is shown that the
unintentionally doped region has an average carrier concentration of 
2.5
0.31018 cm−3. SCM
also reveals the presence of unintentionally doped features extending at 60° from the GaN/sapphire
interface. The observation of decreasing carrier concentration with distance from the GaN/sapphire
interface along these features may suggest that the unintentional doping arises from oxygen
diffusion from the sapphire substrate. Low temperature cathodoluminescence spectra reveal
emission peaks at 3.41 and 3.30 eV, which are believed to originate from basal plane stacking faults

BSFs and prismatic stacking faults 
PSFs, respectively. It is shown that the inclined features
extending from the GaN/sapphire interface exhibit both enhanced BSF and PSF emission. We
suggest that enhanced unintentional doping occurs in regions around PSFs. Where BSFs intersect
this doped material their emission is also enhanced due to reduced nonradiative recombination.
Transmission electron microscopy confirms the presence of PSFs extending through the film at 60°
from the GaN/sapphire interface.}},
  author       = {{Zhu, Tongtong and Johnston, Carol F. and Häberlen, Maik and Kappers, Menno J. and Oliver, Rachel A.}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  number       = {{2}},
  publisher    = {{AIP Publishing}},
  title        = {{{Characterization of unintentional doping in nonpolar GaN}}},
  doi          = {{10.1063/1.3284944}},
  volume       = {{107}},
  year         = {{2010}},
}

@article{4212,
  abstract     = {{Low temperature cathodo- and photoluminescence has been performed on nonpolar a-plane GaN films grown using epitaxial lateral overgrowth. In films overgrown at a low V–III ratio, the emission spectrum is dominated by “yellow” and “blue” luminescence bands, attributed to recombination at point defects or impurities. The intensity of this emission is observed to decrease steadily across the window region along the −c direction, possibly due to asymmetric diffusion of a point defect/impurity species. When overgrown at a higher V–III ratio, the near band edge and basal-plane stacking fault emission intensity increases by orders of magnitude and a donor–acceptor pair band is observed. Using monochromatic cathodoluminescence imaging, the various emission features are correlated with the microstructure of the film. In particular, the peak energy of the basal-plane stacking fault emission is seen to be blueshifted by 15 meV in the wing relative to the window region, which may be related to the different strain states in the respective regions.}},
  author       = {{Häberlen, M. and Badcock, T. J. and Moram, M. A. and Hollander, J. L. and Kappers, M. J. and Dawson, P. and Humphreys, C. J. and Oliver, R. A.}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  number       = {{3}},
  publisher    = {{AIP Publishing}},
  title        = {{{Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth}}},
  doi          = {{10.1063/1.3460641}},
  volume       = {{108}},
  year         = {{2010}},
}

@article{39747,
  author       = {{Hoischen, A. and Benning, S. A. and Kitzerow, Heinz-Siegfried}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  keywords     = {{General Physics and Astronomy}},
  number       = {{1}},
  publisher    = {{AIP Publishing}},
  title        = {{{Electroconvection of liquid crystals: Tool for fabricating modulated polymer surfaces}}},
  doi          = {{10.1063/1.3055398}},
  volume       = {{105}},
  year         = {{2009}},
}

@article{7643,
  author       = {{Meier, Cedrik and Gondorf, Andreas and Lüttjohann, Stephan and Lorke, Axel and Wiggers, Hartmut}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  number       = {{10}},
  publisher    = {{AIP Publishing}},
  title        = {{{Silicon nanoparticles: Absorption, emission, and the nature of the electronic bandgap}}},
  doi          = {{10.1063/1.2720095}},
  volume       = {{101}},
  year         = {{2007}},
}

@article{7648,
  author       = {{Meier, Cedrik and Lüttjohann, Stephan and Kravets, Vasyl G. and Nienhaus, Hermann and Lorke, Axel and Ifeacho, Pascal and Wiggers, Hartmut and Schulz, Christof and Kennedy, Marcus K. and Kruis, F. Einar}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  number       = {{11}},
  publisher    = {{AIP Publishing}},
  title        = {{{Vibrational and defect states in SnOx nanoparticles}}},
  doi          = {{10.1063/1.2203408}},
  volume       = {{99}},
  year         = {{2006}},
}

@article{8651,
  author       = {{Gerhardt, N. C. and Hövel, S. and Brenner, C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Keune, W. and Halm, S. and Bacher, G. and Westerholt, K.}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  title        = {{{Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts}}},
  doi          = {{10.1063/1.2186376}},
  year         = {{2006}},
}

@article{29681,
  author       = {{Schmalhorst, J. and Sacher, Marc and Höink, V. and Reiss, G. and Hütten, A. and Engel, D. and Ehresmann, A.}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  keywords     = {{General Physics and Astronomy}},
  number       = {{11}},
  publisher    = {{AIP Publishing}},
  title        = {{{Magnetic and chemical properties of Co[sub 2]MnSi thin films compared to the Co[sub 2]MnSi∕Al-O interface}}},
  doi          = {{10.1063/1.2384806}},
  volume       = {{100}},
  year         = {{2006}},
}

@article{29683,
  author       = {{Höink, V. and Sacher, Marc and Schmalhorst, J. and Reiss, G. and Engel, D. and Weis, T. and Ehresmann, A.}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  keywords     = {{General Physics and Astronomy}},
  number       = {{6}},
  publisher    = {{AIP Publishing}},
  title        = {{{Switchable resonant x-ray Bragg scattering on a magnetic grating patterned by ion bombardment}}},
  doi          = {{10.1063/1.2349568}},
  volume       = {{100}},
  year         = {{2006}},
}

@article{39761,
  author       = {{Paelke, Lutz and Kitzerow, Heinz-Siegfried}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  keywords     = {{General Physics and Astronomy}},
  number       = {{11}},
  publisher    = {{AIP Publishing}},
  title        = {{{Space charge field and dynamics of the grating formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane}}},
  doi          = {{10.1063/1.2372434}},
  volume       = {{100}},
  year         = {{2006}},
}

@article{7657,
  author       = {{Kravets, Vasyl G. and Meier, Cedrik and Konjhodzic, Denan and Lorke, Axel and Wiggers, Hartmut}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  number       = {{8}},
  publisher    = {{AIP Publishing}},
  title        = {{{Infrared properties of silicon nanoparticles}}},
  doi          = {{10.1063/1.1866475}},
  volume       = {{97}},
  year         = {{2005}},
}

@article{29689,
  author       = {{Schmalhorst, J. and Sacher, Marc and Thomas, A. and Brückl, H. and Reiss, G. and Starke, K.}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  keywords     = {{General Physics and Astronomy}},
  number       = {{12}},
  publisher    = {{AIP Publishing}},
  title        = {{{X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions}}},
  doi          = {{10.1063/1.1939086}},
  volume       = {{97}},
  year         = {{2005}},
}

@article{29688,
  author       = {{Schmalhorst, J. and Sacher, Marc and Thomas, A. and Brückl, H. and Reiss, G. and Starke, K.}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  keywords     = {{General Physics and Astronomy}},
  number       = {{12}},
  publisher    = {{AIP Publishing}},
  title        = {{{X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions}}},
  doi          = {{10.1063/1.1939086}},
  volume       = {{97}},
  year         = {{2005}},
}

@article{29687,
  author       = {{Sacher, Marc and Sauerwald, J. and Schmalhorst, J. and Reiss, G.}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  keywords     = {{General Physics and Astronomy}},
  number       = {{10}},
  publisher    = {{AIP Publishing}},
  title        = {{{Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions}}},
  doi          = {{10.1063/1.2134883}},
  volume       = {{98}},
  year         = {{2005}},
}

@article{39770,
  author       = {{Stich, N. and Kitzerow, Heinz-Siegfried}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  keywords     = {{General Physics and Astronomy}},
  number       = {{3}},
  publisher    = {{AIP Publishing}},
  title        = {{{Superposition of patterns in cross-linked liquid crystals}}},
  doi          = {{10.1063/1.1832744}},
  volume       = {{97}},
  year         = {{2005}},
}

@article{8706,
  author       = {{Schmidt, K. H. and Bock, C. and Versen, M. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  pages        = {{5715--5721}},
  title        = {{{Capacitance and tunneling spectroscopy of InAs quantum dots}}},
  doi          = {{10.1063/1.1703827}},
  year         = {{2004}},
}

@article{29692,
  author       = {{Dimopoulos, T. and Gieres, G. and Wecker, J. and Wiese, N. and Sacher, Marc}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  keywords     = {{General Physics and Astronomy}},
  number       = {{11}},
  pages        = {{6382--6386}},
  publisher    = {{AIP Publishing}},
  title        = {{{Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes}}},
  doi          = {{10.1063/1.1808899}},
  volume       = {{96}},
  year         = {{2004}},
}

@article{7681,
  author       = {{Meier, Cedrik and Reuter, Dirk and Riedesel, Christof and Wieck, Andreas D.}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  number       = {{10}},
  pages        = {{6100--6106}},
  publisher    = {{AIP Publishing}},
  title        = {{{Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures}}},
  doi          = {{10.1063/1.1563032}},
  volume       = {{93}},
  year         = {{2003}},
}

@article{8720,
  author       = {{Meier, Cedrik and Reuter, Dirk and Riedesel, Christof and Wieck, Andreas D.}},
  issn         = {{0021-8979}},
  journal      = {{Journal of Applied Physics}},
  pages        = {{6100--6106}},
  title        = {{{Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures}}},
  doi          = {{10.1063/1.1563032}},
  year         = {{2003}},
}