[{"citation":{"apa":"Spychala, K. J., Amber, Z. H., Eng, L. M., & Rüsing, M. (2023). Modeling nonlinear optical interactions of focused beams in bulk crystals and thin films: A phenomenological approach. Journal of Applied Physics, 133(12), Article 123105. https://doi.org/10.1063/5.0136252","ama":"Spychala KJ, Amber ZH, Eng LM, Rüsing M. Modeling nonlinear optical interactions of focused beams in bulk crystals and thin films: A phenomenological approach. Journal of Applied Physics. 2023;133(12). doi:10.1063/5.0136252","chicago":"Spychala, Kai J., Zeeshan H. Amber, Lukas M. Eng, and Michael Rüsing. “Modeling Nonlinear Optical Interactions of Focused Beams in Bulk Crystals and Thin Films: A Phenomenological Approach.” Journal of Applied Physics 133, no. 12 (2023). https://doi.org/10.1063/5.0136252.","bibtex":"@article{Spychala_Amber_Eng_Rüsing_2023, title={Modeling nonlinear optical interactions of focused beams in bulk crystals and thin films: A phenomenological approach}, volume={133}, DOI={10.1063/5.0136252}, number={12123105}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Spychala, Kai J. and Amber, Zeeshan H. and Eng, Lukas M. and Rüsing, Michael}, year={2023} }","mla":"Spychala, Kai J., et al. “Modeling Nonlinear Optical Interactions of Focused Beams in Bulk Crystals and Thin Films: A Phenomenological Approach.” Journal of Applied Physics, vol. 133, no. 12, 123105, AIP Publishing, 2023, doi:10.1063/5.0136252.","short":"K.J. Spychala, Z.H. Amber, L.M. Eng, M. Rüsing, Journal of Applied Physics 133 (2023).","ieee":"K. J. Spychala, Z. H. Amber, L. M. Eng, and M. Rüsing, “Modeling nonlinear optical interactions of focused beams in bulk crystals and thin films: A phenomenological approach,” Journal of Applied Physics, vol. 133, no. 12, Art. no. 123105, 2023, doi: 10.1063/5.0136252."},"type":"journal_article","year":"2023","main_file_link":[{"url":" https://doi.org/10.1063/5.0136252","open_access":"1"}],"article_number":"123105","issue":"12","intvolume":" 133","_id":"47994","volume":133,"date_created":"2023-10-11T09:09:00Z","status":"public","publication":"Journal of Applied Physics","keyword":["General Physics and Astronomy"],"author":[{"first_name":"Kai J.","full_name":"Spychala, Kai J.","last_name":"Spychala"},{"last_name":"Amber","full_name":"Amber, Zeeshan H.","first_name":"Zeeshan H."},{"first_name":"Lukas M.","full_name":"Eng, Lukas M.","last_name":"Eng"},{"orcid":"0000-0003-4682-4577","full_name":"Rüsing, Michael","first_name":"Michael","id":"22501","last_name":"Rüsing"}],"publisher":"AIP Publishing","quality_controlled":"1","user_id":"22501","extern":"1","abstract":[{"lang":"eng","text":"Coherent nonlinear optical μ-spectroscopy is a frequently used tool in modern material science as it is sensitive to many different local observables, which comprise, among others, crystal symmetry and vibrational properties. The richness in information, however, may come with challenges in data interpretation, as one has to disentangle the many different effects like multiple reflections, phase jumps at interfaces, or the influence of the Guoy-phase. In order to facilitate interpretation, the work presented here proposes an easy-to-use semi-analytical modeling Ansatz, which bases upon known analytical solutions using Gaussian beams. Specifically, we apply this Ansatz to compute nonlinear optical responses of (thin film) optical materials. We try to conserve the meaning of intuitive parameters like the Gouy-phase and the nonlinear coherent interaction length. In particular, the concept of coherence length is extended, which is a must when using focal beams. The model is subsequently applied to exemplary cases of second- and third-harmonic generation. We observe a very good agreement with experimental data, and furthermore, despite the constraints and limits of the analytical Ansatz, our model performs similarly well as when using more rigorous simulations. However, it outperforms the latter in terms of computational power, requiring more than three orders less computational time and less performant computer systems."}],"article_type":"original","language":[{"iso":"eng"}],"doi":"10.1063/5.0136252","oa":"1","date_updated":"2023-10-11T16:10:54Z","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","title":"Modeling nonlinear optical interactions of focused beams in bulk crystals and thin films: A phenomenological approach"},{"date_created":"2023-08-18T08:17:41Z","status":"public","volume":134,"publication":"Journal of Applied Physics","keyword":["General Physics and Astronomy"],"publisher":"AIP Publishing","author":[{"last_name":"Baron","full_name":"Baron, Elias","first_name":"Elias"},{"last_name":"Goldhahn","full_name":"Goldhahn, Rüdiger","first_name":"Rüdiger"},{"full_name":"Espinoza, Shirly","first_name":"Shirly","last_name":"Espinoza"},{"last_name":"Zahradník","full_name":"Zahradník, Martin","first_name":"Martin"},{"last_name":"Rebarz","full_name":"Rebarz, Mateusz","first_name":"Mateusz"},{"full_name":"Andreasson, Jakob","first_name":"Jakob","last_name":"Andreasson"},{"first_name":"Michael","full_name":"Deppe, Michael","last_name":"Deppe"},{"id":"14","last_name":"As","full_name":"As, Donat Josef","orcid":"0000-0003-1121-3565","first_name":"Donat Josef"},{"full_name":"Feneberg, Martin","first_name":"Martin","last_name":"Feneberg"}],"user_id":"14931","abstract":[{"text":"An ultra-fast change of the absorption onset for zincblende gallium-nitride (zb-GaN) (fundamental bandgap: 3.23 eV) is observed by investigating the imaginary part of the dielectric function using time-dependent femtosecond pump–probe spectroscopic ellipsometry between 2.9 and 3.7 eV. The 266 nm (4.66 eV) pump pulses induce a large electron–hole pair concentration up to 4×1020cm−3, which shift the transition energy between conduction and valence bands due to many-body effects up to ≈500 meV. Here, the absorption onset increases due to band filling while the bandgap renormalization at the same time decreases the bandgap. Additionally, the absorption of the pump-beam creates a free-carrier profile within the 605 nm zb-GaN layer with high free-carrier concentrations at the surface, and low concentrations at the interface to the substrate. This leads to varying optical properties from the sample surface (high transition energy) to substrate (low transition energy), which are taken into account by grading analysis for an accurate description of the experimental data. For this, a model describing the time- and position-dependent free-carrier concentration is formulated by considering the relaxation, recombination, and diffusion of those carriers. We provide a quantitative analysis of optical experimental data (ellipsometric angles Ψ and Δ) as well as a plot for the time-dependent change of the imaginary part of the dielectric function.","lang":"eng"}],"citation":{"bibtex":"@article{Baron_Goldhahn_Espinoza_Zahradník_Rebarz_Andreasson_Deppe_As_Feneberg_2023, title={Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function}, volume={134}, DOI={10.1063/5.0153091}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Baron, Elias and Goldhahn, Rüdiger and Espinoza, Shirly and Zahradník, Martin and Rebarz, Mateusz and Andreasson, Jakob and Deppe, Michael and As, Donat Josef and Feneberg, Martin}, year={2023} }","mla":"Baron, Elias, et al. “Time-Resolved Pump–Probe Spectroscopic Ellipsometry of Cubic GaN. I. Determination of the Dielectric Function.” Journal of Applied Physics, vol. 134, no. 7, AIP Publishing, 2023, doi:10.1063/5.0153091.","chicago":"Baron, Elias, Rüdiger Goldhahn, Shirly Espinoza, Martin Zahradník, Mateusz Rebarz, Jakob Andreasson, Michael Deppe, Donat Josef As, and Martin Feneberg. “Time-Resolved Pump–Probe Spectroscopic Ellipsometry of Cubic GaN. I. Determination of the Dielectric Function.” Journal of Applied Physics 134, no. 7 (2023). https://doi.org/10.1063/5.0153091.","apa":"Baron, E., Goldhahn, R., Espinoza, S., Zahradník, M., Rebarz, M., Andreasson, J., Deppe, M., As, D. J., & Feneberg, M. (2023). Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function. Journal of Applied Physics, 134(7). https://doi.org/10.1063/5.0153091","ama":"Baron E, Goldhahn R, Espinoza S, et al. Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function. Journal of Applied Physics. 2023;134(7). doi:10.1063/5.0153091","ieee":"E. Baron et al., “Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function,” Journal of Applied Physics, vol. 134, no. 7, 2023, doi: 10.1063/5.0153091.","short":"E. Baron, R. Goldhahn, S. Espinoza, M. Zahradník, M. Rebarz, J. Andreasson, M. Deppe, D.J. As, M. Feneberg, Journal of Applied Physics 134 (2023)."},"year":"2023","type":"journal_article","issue":"7","intvolume":" 134","_id":"46573","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"department":[{"_id":"15"},{"_id":"230"}],"title":"Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function","language":[{"iso":"eng"}],"doi":"10.1063/5.0153091","date_updated":"2023-10-09T09:17:15Z"},{"department":[{"_id":"15"},{"_id":"230"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","title":"Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A","language":[{"iso":"eng"}],"date_updated":"2023-01-10T12:08:26Z","doi":"10.1063/5.0121559","publisher":"AIP Publishing","author":[{"last_name":"Riedl","id":"36950","first_name":"Thomas","full_name":"Riedl, Thomas"},{"first_name":"Vinay S.","full_name":"Kunnathully, Vinay S.","last_name":"Kunnathully"},{"first_name":"Akshay Kumar","full_name":"Verma, Akshay Kumar","last_name":"Verma","id":"72998"},{"full_name":"Langer, Timo","first_name":"Timo","last_name":"Langer"},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"last_name":"Büker","full_name":"Büker, Björn","first_name":"Björn"},{"first_name":"Andreas","full_name":"Hütten, Andreas","last_name":"Hütten"},{"last_name":"Lindner","id":"20797","first_name":"Jörg","full_name":"Lindner, Jörg"}],"publication":"Journal of Applied Physics","keyword":["General Physics and Astronomy"],"volume":132,"status":"public","date_created":"2022-11-10T14:19:21Z","abstract":[{"text":" A process sequence enabling the large-area fabrication of nanopillar-patterned semiconductor templates for selective-area heteroepitaxy is developed. Herein, the nanopillar tops surrounded by a SiNx mask film serve as nanoscale growth areas. The molecular beam epitaxial growth of InAs on such patterned GaAs[Formula: see text]A templates is investigated by means of electron microscopy. It is found that defect-free nanoscale InAs islands grow selectively on the nanopillar tops at a substrate temperature of 425 °C. High-angle annular dark-field scanning transmission electron microscopy imaging reveals that for a growth temperature of 400 °C, the InAs islands show a tendency to form wurtzite phase arms extending along the lateral [Formula: see text] directions from the central zinc blende region of the islands. This is ascribed to a temporary self-catalyzed vapor–liquid–solid growth on [Formula: see text] B facets, which leads to a kinetically induced preference for the nucleation of the wurtzite phase driven by the local, instantaneous V/III ratio, and to a concomitant reduction of surface energy of the nanoscale diameter arms. ","lang":"eng"}],"user_id":"77496","citation":{"chicago":"Riedl, Thomas, Vinay S. Kunnathully, Akshay Kumar Verma, Timo Langer, Dirk Reuter, Björn Büker, Andreas Hütten, and Jörg Lindner. “Selective Area Heteroepitaxy of InAs Nanostructures on Nanopillar-Patterned GaAs(111)A.” Journal of Applied Physics 132, no. 18 (2022). https://doi.org/10.1063/5.0121559.","ama":"Riedl T, Kunnathully VS, Verma AK, et al. Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A. Journal of Applied Physics. 2022;132(18). doi:10.1063/5.0121559","apa":"Riedl, T., Kunnathully, V. S., Verma, A. K., Langer, T., Reuter, D., Büker, B., Hütten, A., & Lindner, J. (2022). Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A. Journal of Applied Physics, 132(18), Article 185701. https://doi.org/10.1063/5.0121559","bibtex":"@article{Riedl_Kunnathully_Verma_Langer_Reuter_Büker_Hütten_Lindner_2022, title={Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A}, volume={132}, DOI={10.1063/5.0121559}, number={18185701}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Riedl, Thomas and Kunnathully, Vinay S. and Verma, Akshay Kumar and Langer, Timo and Reuter, Dirk and Büker, Björn and Hütten, Andreas and Lindner, Jörg}, year={2022} }","mla":"Riedl, Thomas, et al. “Selective Area Heteroepitaxy of InAs Nanostructures on Nanopillar-Patterned GaAs(111)A.” Journal of Applied Physics, vol. 132, no. 18, 185701, AIP Publishing, 2022, doi:10.1063/5.0121559.","short":"T. Riedl, V.S. Kunnathully, A.K. Verma, T. Langer, D. Reuter, B. Büker, A. Hütten, J. Lindner, Journal of Applied Physics 132 (2022).","ieee":"T. Riedl et al., “Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A,” Journal of Applied Physics, vol. 132, no. 18, Art. no. 185701, 2022, doi: 10.1063/5.0121559."},"type":"journal_article","year":"2022","intvolume":" 132","_id":"34056","article_number":"185701","issue":"18"},{"extern":"1","abstract":[{"lang":"eng","text":"Recent analyses by polarization resolved second-harmonic (SH) microscopy have demonstrated that ferroelectric (FE) domain walls (DWs) can possess non-Ising wall characteristics and topological nature. These analyses rely on locally analyzing the properties, directionality, and magnitude of the second-order nonlinear tensor. However, when inspecting FE DWs with SH microscopy, a manifold of different effects may contribute to the observed signal difference between domains and DWs, i.e., far-field interference, Čerenkov-type phase-matching (CSHG), and changes in the aforementioned local nonlinear optical properties. They all might be present at the same time and, therefore, require careful interpretation and separation. In this work, we demonstrate how the particularly strong Čerenkov-type contrast can selectively be blocked using dark- and bright-field SH microscopy. Based on this approach, we show that other contrast mechanisms emerge that were previously overlayed by CSHG but can now be readily selected through the appropriate experimental geometry. Using the methods presented, we show that the strength of the CSHG contrast compared to the other mechanisms is approximately 22 times higher. This work lays the foundation for the in-depth analysis of FE DW topologies by SH microscopy."}],"article_type":"original","user_id":"22501","keyword":["General Physics and Astronomy"],"publication":"Journal of Applied Physics","author":[{"first_name":"Peter A.","full_name":"Hegarty, Peter A.","last_name":"Hegarty"},{"last_name":"Beccard","full_name":"Beccard, Henrik","first_name":"Henrik"},{"last_name":"Eng","first_name":"Lukas M.","full_name":"Eng, Lukas M."},{"full_name":"Rüsing, Michael","orcid":"0000-0003-4682-4577","first_name":"Michael","id":"22501","last_name":"Rüsing"}],"quality_controlled":"1","publisher":"AIP Publishing","volume":131,"date_created":"2023-10-11T08:53:25Z","status":"public","_id":"47984","intvolume":" 131","issue":"24","funded_apc":"1","main_file_link":[{"url":" https://doi.org/10.1063/5.0094988","open_access":"1"}],"year":"2022","citation":{"short":"P.A. Hegarty, H. Beccard, L.M. Eng, M. Rüsing, Journal of Applied Physics 131 (2022).","ieee":"P. A. Hegarty, H. Beccard, L. M. Eng, and M. Rüsing, “Turn all the lights off: Bright- and dark-field second-harmonic microscopy to select contrast mechanisms for ferroelectric domain walls,” Journal of Applied Physics, vol. 131, no. 24, 2022, doi: 10.1063/5.0094988.","chicago":"Hegarty, Peter A., Henrik Beccard, Lukas M. Eng, and Michael Rüsing. “Turn All the Lights off: Bright- and Dark-Field Second-Harmonic Microscopy to Select Contrast Mechanisms for Ferroelectric Domain Walls.” Journal of Applied Physics 131, no. 24 (2022). https://doi.org/10.1063/5.0094988.","apa":"Hegarty, P. A., Beccard, H., Eng, L. M., & Rüsing, M. (2022). Turn all the lights off: Bright- and dark-field second-harmonic microscopy to select contrast mechanisms for ferroelectric domain walls. Journal of Applied Physics, 131(24). https://doi.org/10.1063/5.0094988","ama":"Hegarty PA, Beccard H, Eng LM, Rüsing M. Turn all the lights off: Bright- and dark-field second-harmonic microscopy to select contrast mechanisms for ferroelectric domain walls. Journal of Applied Physics. 2022;131(24). doi:10.1063/5.0094988","mla":"Hegarty, Peter A., et al. “Turn All the Lights off: Bright- and Dark-Field Second-Harmonic Microscopy to Select Contrast Mechanisms for Ferroelectric Domain Walls.” Journal of Applied Physics, vol. 131, no. 24, AIP Publishing, 2022, doi:10.1063/5.0094988.","bibtex":"@article{Hegarty_Beccard_Eng_Rüsing_2022, title={Turn all the lights off: Bright- and dark-field second-harmonic microscopy to select contrast mechanisms for ferroelectric domain walls}, volume={131}, DOI={10.1063/5.0094988}, number={24}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Hegarty, Peter A. and Beccard, Henrik and Eng, Lukas M. and Rüsing, Michael}, year={2022} }"},"type":"journal_article","title":"Turn all the lights off: Bright- and dark-field second-harmonic microscopy to select contrast mechanisms for ferroelectric domain walls","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"date_updated":"2023-10-11T08:53:55Z","doi":"10.1063/5.0094988","oa":"1","language":[{"iso":"eng"}]},{"_id":"47989","intvolume":" 132","article_number":"213102","issue":"21","funded_apc":"1","main_file_link":[{"url":" https://doi.org/10.1063/5.0125926","open_access":"1"}],"citation":{"mla":"Amber, Zeeshan H., et al. “Nonlinear Optical Interactions in Focused Beams and Nanosized Structures.” Journal of Applied Physics, vol. 132, no. 21, 213102, AIP Publishing, 2022, doi:10.1063/5.0125926.","bibtex":"@article{Amber_Spychala_Eng_Rüsing_2022, title={Nonlinear optical interactions in focused beams and nanosized structures}, volume={132}, DOI={10.1063/5.0125926}, number={21213102}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Amber, Zeeshan H. and Spychala, Kai J. and Eng, Lukas M. and Rüsing, Michael}, year={2022} }","apa":"Amber, Z. H., Spychala, K. J., Eng, L. M., & Rüsing, M. (2022). Nonlinear optical interactions in focused beams and nanosized structures. Journal of Applied Physics, 132(21), Article 213102. https://doi.org/10.1063/5.0125926","ama":"Amber ZH, Spychala KJ, Eng LM, Rüsing M. Nonlinear optical interactions in focused beams and nanosized structures. Journal of Applied Physics. 2022;132(21). doi:10.1063/5.0125926","chicago":"Amber, Zeeshan H., Kai J. Spychala, Lukas M. Eng, and Michael Rüsing. “Nonlinear Optical Interactions in Focused Beams and Nanosized Structures.” Journal of Applied Physics 132, no. 21 (2022). https://doi.org/10.1063/5.0125926.","ieee":"Z. H. Amber, K. J. Spychala, L. M. Eng, and M. Rüsing, “Nonlinear optical interactions in focused beams and nanosized structures,” Journal of Applied Physics, vol. 132, no. 21, Art. no. 213102, 2022, doi: 10.1063/5.0125926.","short":"Z.H. Amber, K.J. Spychala, L.M. Eng, M. Rüsing, Journal of Applied Physics 132 (2022)."},"type":"journal_article","year":"2022","abstract":[{"text":"Thin-film materials from μm thickness down to single-atomic-layered 2D materials play a central role in many novel electronic and optical applications. Coherent, nonlinear optical (NLO) μ-spectroscopy offers insight into the local thickness, stacking order, symmetry, or electronic and vibrational properties. Thin films and 2D materials are usually supported on multi-layered substrates leading to (multi-)reflections, interference, or phase jumps at interfaces during μ-spectroscopy, which all can make the interpretation of experiments particularly challenging. The disentanglement of the influence parameters can be achieved via rigorous theoretical analysis. In this work, we compare two self-developed modeling approaches, a semi-analytical and a fully vectorial model, to experiments carried out in thin-film geometry for two archetypal NLO processes, second-harmonic and third-harmonic generation. In particular, we demonstrate that thin-film interference and phase matching do heavily influence the signal strength. Furthermore, we work out key differences between three and four photon processes, such as the role of the Gouy-phase shift and the focal position. Last, we can show that a relatively simple semi-analytical model, despite its limitations, is able to accurately describe experiments at a significantly lower computational cost as compared to a full vectorial modeling. This study lays the groundwork for performing quantitative NLO μ-spectroscopy on thin films and 2D materials, as it identifies and quantifies the impact of the corresponding sample and setup parameters on the NLO signal, in order to distinguish them from genuine material properties.<","lang":"eng"}],"article_type":"original","user_id":"22501","publication":"Journal of Applied Physics","keyword":["General Physics and Astronomy"],"publisher":"AIP Publishing","author":[{"last_name":"Amber","full_name":"Amber, Zeeshan H.","first_name":"Zeeshan H."},{"last_name":"Spychala","first_name":"Kai J.","full_name":"Spychala, Kai J."},{"last_name":"Eng","first_name":"Lukas M.","full_name":"Eng, Lukas M."},{"last_name":"Rüsing","id":"22501","first_name":"Michael","orcid":"0000-0003-4682-4577","full_name":"Rüsing, Michael"}],"quality_controlled":"1","volume":132,"date_created":"2023-10-11T08:59:23Z","status":"public","date_updated":"2023-10-11T09:01:37Z","doi":"10.1063/5.0125926","oa":"1","language":[{"iso":"eng"}],"title":"Nonlinear optical interactions in focused beams and nanosized structures","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]}},{"page":"214102","type":"journal_article","citation":{"ama":"Hegarty PA, Eng LM, Rüsing M. Tuning the Čerenkov second harmonic contrast from ferroelectric domain walls via anomalous dispersion. Journal of Applied Physics. 2022;132(21):214102. doi:10.1063/5.0115673","apa":"Hegarty, P. A., Eng, L. M., & Rüsing, M. (2022). Tuning the Čerenkov second harmonic contrast from ferroelectric domain walls via anomalous dispersion. Journal of Applied Physics, 132(21), 214102. https://doi.org/10.1063/5.0115673","chicago":"Hegarty, Peter A., Lukas M. Eng, and Michael Rüsing. “Tuning the Čerenkov Second Harmonic Contrast from Ferroelectric Domain Walls via Anomalous Dispersion.” Journal of Applied Physics 132, no. 21 (2022): 214102. https://doi.org/10.1063/5.0115673.","bibtex":"@article{Hegarty_Eng_Rüsing_2022, title={Tuning the Čerenkov second harmonic contrast from ferroelectric domain walls via anomalous dispersion}, volume={132}, DOI={10.1063/5.0115673}, number={21}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Hegarty, Peter A. and Eng, Lukas M. and Rüsing, Michael}, year={2022}, pages={214102} }","mla":"Hegarty, Peter A., et al. “Tuning the Čerenkov Second Harmonic Contrast from Ferroelectric Domain Walls via Anomalous Dispersion.” Journal of Applied Physics, vol. 132, no. 21, AIP Publishing, 2022, p. 214102, doi:10.1063/5.0115673.","short":"P.A. Hegarty, L.M. Eng, M. Rüsing, Journal of Applied Physics 132 (2022) 214102.","ieee":"P. A. Hegarty, L. M. Eng, and M. Rüsing, “Tuning the Čerenkov second harmonic contrast from ferroelectric domain walls via anomalous dispersion,” Journal of Applied Physics, vol. 132, no. 21, p. 214102, 2022, doi: 10.1063/5.0115673."},"year":"2022","funded_apc":"1","main_file_link":[{"url":" https://doi.org/10.1063/5.0115673","open_access":"1"}],"issue":"21","intvolume":" 132","_id":"47988","date_created":"2023-10-11T08:57:55Z","status":"public","volume":132,"publication":"Journal of Applied Physics","keyword":["General Physics and Astronomy"],"author":[{"full_name":"Hegarty, Peter A.","first_name":"Peter A.","last_name":"Hegarty"},{"last_name":"Eng","first_name":"Lukas M.","full_name":"Eng, Lukas M."},{"id":"22501","last_name":"Rüsing","orcid":"0000-0003-4682-4577","full_name":"Rüsing, Michael","first_name":"Michael"}],"quality_controlled":"1","publisher":"AIP Publishing","user_id":"22501","abstract":[{"lang":"eng","text":"Second harmonic (SH) microscopy represents a powerful tool for the investigation of crystalline systems, such as ferroelectrics and their domain walls (DWs). Under the condition of normal dispersion, i.e., the refractive index at the SH wavelength is larger as compared to the refractive index at the fundamental wavelength, n(2ω)>n(ω), bulk crystals will generate no SH signal. Should the bulk, however, contain DWs, an appreciable SH signal will still be detectable at the location of DWs stemming from the Čerenkov mechanism. In this work, we demonstrate both how SH signals are generated in bulk media and how the Čerenkov mechanism can be inhibited by using anomalous dispersion, i.e., n(ω)Journal of Applied Physics. 2021;129(1). doi:10.1063/5.0029620","apa":"Zhang, D., Sando, D., Pan, Y., Sharma, P., & Seidel, J. (2021). Robust ferroelectric polarization retention in harsh environments through engineered domain wall pinning. Journal of Applied Physics, 129(1), Article 014102. https://doi.org/10.1063/5.0029620","chicago":"Zhang, Dawei, Daniel Sando, Ying Pan, Pankaj Sharma, and Jan Seidel. “Robust Ferroelectric Polarization Retention in Harsh Environments through Engineered Domain Wall Pinning.” Journal of Applied Physics 129, no. 1 (2021). https://doi.org/10.1063/5.0029620.","mla":"Zhang, Dawei, et al. “Robust Ferroelectric Polarization Retention in Harsh Environments through Engineered Domain Wall Pinning.” Journal of Applied Physics, vol. 129, no. 1, 014102, AIP Publishing, 2021, doi:10.1063/5.0029620.","bibtex":"@article{Zhang_Sando_Pan_Sharma_Seidel_2021, title={Robust ferroelectric polarization retention in harsh environments through engineered domain wall pinning}, volume={129}, DOI={10.1063/5.0029620}, number={1014102}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zhang, Dawei and Sando, Daniel and Pan, Ying and Sharma, Pankaj and Seidel, Jan}, year={2021} }","short":"D. Zhang, D. Sando, Y. Pan, P. Sharma, J. Seidel, Journal of Applied Physics 129 (2021).","ieee":"D. Zhang, D. Sando, Y. Pan, P. Sharma, and J. Seidel, “Robust ferroelectric polarization retention in harsh environments through engineered domain wall pinning,” Journal of Applied Physics, vol. 129, no. 1, Art. no. 014102, 2021, doi: 10.1063/5.0029620."},"year":"2021","user_id":"100383","extern":"1","volume":129,"status":"public","date_created":"2023-07-11T14:50:35Z","author":[{"last_name":"Zhang","first_name":"Dawei","full_name":"Zhang, Dawei"},{"last_name":"Sando","first_name":"Daniel","full_name":"Sando, Daniel"},{"id":"100383","last_name":"Pan","full_name":"Pan, Ying","first_name":"Ying"},{"full_name":"Sharma, Pankaj","first_name":"Pankaj","last_name":"Sharma"},{"last_name":"Seidel","full_name":"Seidel, Jan","first_name":"Jan"}],"publisher":"AIP Publishing","keyword":["General Physics and Astronomy"],"publication":"Journal of Applied Physics"},{"date_updated":"2023-10-11T08:29:44Z","doi":"10.1063/5.0058996","language":[{"iso":"eng"}],"title":"Quantifying the coherent interaction length of second-harmonic microscopy in lithium niobate confined nanostructures","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","intvolume":" 130","_id":"47973","issue":"13","page":"133102","citation":{"short":"Z.H. Amber, B. Kirbus, L.M. Eng, M. Rüsing, Journal of Applied Physics 130 (2021) 133102.","ieee":"Z. H. Amber, B. Kirbus, L. M. Eng, and M. Rüsing, “Quantifying the coherent interaction length of second-harmonic microscopy in lithium niobate confined nanostructures,” Journal of Applied Physics, vol. 130, no. 13, p. 133102, 2021, doi: 10.1063/5.0058996.","ama":"Amber ZH, Kirbus B, Eng LM, Rüsing M. Quantifying the coherent interaction length of second-harmonic microscopy in lithium niobate confined nanostructures. Journal of Applied Physics. 2021;130(13):133102. doi:10.1063/5.0058996","apa":"Amber, Z. H., Kirbus, B., Eng, L. M., & Rüsing, M. (2021). Quantifying the coherent interaction length of second-harmonic microscopy in lithium niobate confined nanostructures. Journal of Applied Physics, 130(13), 133102. https://doi.org/10.1063/5.0058996","chicago":"Amber, Zeeshan H., Benjamin Kirbus, Lukas M. Eng, and Michael Rüsing. “Quantifying the Coherent Interaction Length of Second-Harmonic Microscopy in Lithium Niobate Confined Nanostructures.” Journal of Applied Physics 130, no. 13 (2021): 133102. https://doi.org/10.1063/5.0058996.","bibtex":"@article{Amber_Kirbus_Eng_Rüsing_2021, title={Quantifying the coherent interaction length of second-harmonic microscopy in lithium niobate confined nanostructures}, volume={130}, DOI={10.1063/5.0058996}, number={13}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Amber, Zeeshan H. and Kirbus, Benjamin and Eng, Lukas M. and Rüsing, Michael}, year={2021}, pages={133102} }","mla":"Amber, Zeeshan H., et al. “Quantifying the Coherent Interaction Length of Second-Harmonic Microscopy in Lithium Niobate Confined Nanostructures.” Journal of Applied Physics, vol. 130, no. 13, AIP Publishing, 2021, p. 133102, doi:10.1063/5.0058996."},"type":"journal_article","year":"2021","extern":"1","abstract":[{"lang":"eng","text":"Thin-film lithium niobate (TFLN) in the form of x- or z-cut lithium-niobate-on-insulator has attracted considerable interest as a very promising and novel platform for developing integrated optoelectronic (nano)devices and exploring fundamental research. Here, we investigate the coherent interaction length lc of optical second-harmonic generation (SHG) microscopy in such samples, that are purposely prepared into a wedge shape, in order to elegantly tune the geometrical confinement from bulk thicknesses down to approximately 50 nm. SHG microscopy is a very powerful and non-invasive tool for the investigation of structural properties in the biological and solid-state sciences, especially for visualizing and analyzing ferroelectric domains and domain walls. However, unlike in bulk lithium niobate (LN), SHG microscopy in TFLN is impacted by interfacial reflections and resonant enhancement, both of which rely on film thickness and substrate material. In this paper, we show that the dominant SHG contribution measured on TFLN in backreflection is the co-propagating phase-matched SHG signal and not the counter-propagating SHG portion as is the case for bulk LN samples. Moreover, lc depends on the incident pump laser wavelength (sample dispersion) but also on the numerical aperture of the focussing objective in use. These experimental findings on x- and z-cut TFLN are excellently backed up by our advanced numerical simulations."}],"article_type":"original","user_id":"22501","publication":"Journal of Applied Physics","keyword":["General Physics and Astronomy"],"quality_controlled":"1","publisher":"AIP Publishing","author":[{"full_name":"Amber, Zeeshan H.","first_name":"Zeeshan H.","last_name":"Amber"},{"first_name":"Benjamin","full_name":"Kirbus, Benjamin","last_name":"Kirbus"},{"first_name":"Lukas M.","full_name":"Eng, Lukas M.","last_name":"Eng"},{"first_name":"Michael","orcid":"0000-0003-4682-4577","full_name":"Rüsing, Michael","last_name":"Rüsing","id":"22501"}],"volume":130,"date_created":"2023-10-11T08:29:03Z","status":"public"},{"year":"2020","type":"journal_article","citation":{"chicago":"Volmert, Ruth, Nils Weber, and Cedrik Meier. “Nanoantennas Embedded in Zinc Oxide for Second Harmonic Generation Enhancement.” Journal of Applied Physics 128, no. 4 (2020). https://doi.org/10.1063/5.0012813.","apa":"Volmert, R., Weber, N., & Meier, C. (2020). Nanoantennas embedded in zinc oxide for second harmonic generation enhancement. Journal of Applied Physics, 128(4). https://doi.org/10.1063/5.0012813","ama":"Volmert R, Weber N, Meier C. Nanoantennas embedded in zinc oxide for second harmonic generation enhancement. Journal of Applied Physics. 2020;128(4). doi:10.1063/5.0012813","bibtex":"@article{Volmert_Weber_Meier_2020, title={Nanoantennas embedded in zinc oxide for second harmonic generation enhancement}, volume={128}, DOI={10.1063/5.0012813}, number={4043107}, journal={Journal of Applied Physics}, author={Volmert, Ruth and Weber, Nils and Meier, Cedrik}, year={2020} }","mla":"Volmert, Ruth, et al. “Nanoantennas Embedded in Zinc Oxide for Second Harmonic Generation Enhancement.” Journal of Applied Physics, vol. 128, no. 4, 043107, 2020, doi:10.1063/5.0012813.","short":"R. Volmert, N. Weber, C. Meier, Journal of Applied Physics 128 (2020).","ieee":"R. Volmert, N. Weber, and C. Meier, “Nanoantennas embedded in zinc oxide for second harmonic generation enhancement,” Journal of Applied Physics, vol. 128, no. 4, 2020."},"_id":"20644","intvolume":" 128","issue":"4","article_number":"043107","quality_controlled":"1","author":[{"last_name":"Volmert","full_name":"Volmert, Ruth","first_name":"Ruth"},{"last_name":"Weber","first_name":"Nils","full_name":"Weber, Nils"},{"id":"20798","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","first_name":"Cedrik"}],"publication":"Journal of Applied Physics","status":"public","date_created":"2020-12-02T12:57:58Z","volume":128,"article_type":"original","abstract":[{"text":"Plasmonic nanoantennas for visible and infrared radiation strongly improve the interaction of light with the matter on the nanoscale due to their strong near-field enhancement. In this study, we investigate a double-resonant plasmonic nanoantenna, which makes use of plasmonic field enhancement, enhanced outcoupling of second harmonic light, and resonant lattice effects. Using this design, we demonstrate how the efficiency of second harmonic generation can be increased significantly by fully embedding the nanoantennas into nonlinear dielectric material ZnO, instead of placing them on the surface. Investigating two different processes, we found that the best fabrication route is embedding the gold nanoantennas in ZnO using an MBE overgrowth process where a thin ZnO layer was deposited on nanoantennas fabricated on a ZnO substrate. In addition, second harmonic generation measurements show that the embedding leads to an enhancement compared to the emission of nanoantennas placed on the ZnO substrate surface. These promising results facilitate further research to determine the influence of the periodicity of the nanoantenna arrangement of the resulting SHG signal.","lang":"eng"}],"user_id":"20798","language":[{"iso":"eng"}],"date_updated":"2022-01-06T06:54:31Z","doi":"10.1063/5.0012813","isi":"1","department":[{"_id":"230"},{"_id":"429"}],"project":[{"name":"TRR 142","_id":"53"},{"name":"TRR 142 - Project Area B","_id":"55"},{"_id":"66","name":"TRR 142 - Subproject B1"},{"_id":"56","name":"TRR 142 - Project Area C"},{"name":"TRR 142 - Subproject C5","_id":"75"}],"publication_identifier":{"issn":["0021-8979"],"eissn":["1089-7550"]},"publication_status":"published","external_id":{"isi":["000557311900001"]},"title":"Nanoantennas embedded in zinc oxide for second harmonic generation enhancement"},{"publication":"Journal of Applied Physics","department":[{"_id":"15"},{"_id":"230"}],"author":[{"last_name":"Spychala","full_name":"Spychala, K. J.","first_name":"K. J."},{"last_name":"Mackwitz","full_name":"Mackwitz, P.","first_name":"P."},{"full_name":"Widhalm, A.","first_name":"A.","last_name":"Widhalm"},{"last_name":"Berth","first_name":"G.","full_name":"Berth, G."},{"last_name":"Zrenner","full_name":"Zrenner, A.","first_name":"A."}],"publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"date_created":"2021-05-09T06:25:14Z","status":"public","title":"Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials in the tight focusing regime","user_id":"606","type":"journal_article","citation":{"ama":"Spychala KJ, Mackwitz P, Widhalm A, Berth G, Zrenner A. Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials in the tight focusing regime. Journal of Applied Physics. 2020. doi:10.1063/1.5133476","apa":"Spychala, K. J., Mackwitz, P., Widhalm, A., Berth, G., & Zrenner, A. (2020). Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials in the tight focusing regime. Journal of Applied Physics. https://doi.org/10.1063/1.5133476","chicago":"Spychala, K. J., P. Mackwitz, A. Widhalm, G. Berth, and A. Zrenner. “Spatially Resolved Light Field Analysis of the Second-Harmonic Signal of χ(2)-Materials in the Tight Focusing Regime.” Journal of Applied Physics, 2020. https://doi.org/10.1063/1.5133476.","bibtex":"@article{Spychala_Mackwitz_Widhalm_Berth_Zrenner_2020, title={Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials in the tight focusing regime}, DOI={10.1063/1.5133476}, number={023103}, journal={Journal of Applied Physics}, author={Spychala, K. J. and Mackwitz, P. and Widhalm, A. and Berth, G. and Zrenner, A.}, year={2020} }","mla":"Spychala, K. J., et al. “Spatially Resolved Light Field Analysis of the Second-Harmonic Signal of χ(2)-Materials in the Tight Focusing Regime.” Journal of Applied Physics, 023103, 2020, doi:10.1063/1.5133476.","short":"K.J. Spychala, P. Mackwitz, A. Widhalm, G. Berth, A. Zrenner, Journal of Applied Physics (2020).","ieee":"K. J. Spychala, P. Mackwitz, A. Widhalm, G. Berth, and A. Zrenner, “Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials in the tight focusing regime,” Journal of Applied Physics, 2020."},"year":"2020","language":[{"iso":"eng"}],"date_updated":"2022-01-06T06:55:23Z","_id":"22053","doi":"10.1063/1.5133476","article_number":"023103"},{"status":"public","date_created":"2021-05-09T06:27:56Z","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","author":[{"first_name":"K. J.","full_name":"Spychala, K. J.","last_name":"Spychala"},{"full_name":"Mackwitz, P.","first_name":"P.","last_name":"Mackwitz"},{"full_name":"Widhalm, A.","first_name":"A.","last_name":"Widhalm"},{"first_name":"Gerhard","full_name":"Berth, Gerhard","last_name":"Berth"},{"first_name":"Artur","full_name":"Zrenner, Artur","orcid":"0000-0002-5190-0944","last_name":"Zrenner","id":"606"}],"department":[{"_id":"15"},{"_id":"230"}],"publication":"Journal of Applied Physics","user_id":"606","title":"Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials in the tight focusing regime","language":[{"iso":"eng"}],"year":"2020","citation":{"chicago":"Spychala, K. J., P. Mackwitz, A. Widhalm, Gerhard Berth, and Artur Zrenner. “Spatially Resolved Light Field Analysis of the Second-Harmonic Signal of χ(2)-Materials in the Tight Focusing Regime.” Journal of Applied Physics, 2020. https://doi.org/10.1063/1.5133476.","ama":"Spychala KJ, Mackwitz P, Widhalm A, Berth G, Zrenner A. Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials in the tight focusing regime. Journal of Applied Physics. 2020. doi:10.1063/1.5133476","apa":"Spychala, K. J., Mackwitz, P., Widhalm, A., Berth, G., & Zrenner, A. (2020). Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials in the tight focusing regime. Journal of Applied Physics. https://doi.org/10.1063/1.5133476","mla":"Spychala, K. J., et al. “Spatially Resolved Light Field Analysis of the Second-Harmonic Signal of χ(2)-Materials in the Tight Focusing Regime.” Journal of Applied Physics, 023103, 2020, doi:10.1063/1.5133476.","bibtex":"@article{Spychala_Mackwitz_Widhalm_Berth_Zrenner_2020, title={Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials in the tight focusing regime}, DOI={10.1063/1.5133476}, number={023103}, journal={Journal of Applied Physics}, author={Spychala, K. J. and Mackwitz, P. and Widhalm, A. and Berth, Gerhard and Zrenner, Artur}, year={2020} }","short":"K.J. Spychala, P. Mackwitz, A. Widhalm, G. Berth, A. Zrenner, Journal of Applied Physics (2020).","ieee":"K. J. Spychala, P. Mackwitz, A. Widhalm, G. Berth, and A. Zrenner, “Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials in the tight focusing regime,” Journal of Applied Physics, 2020."},"type":"journal_article","article_number":"023103","doi":"10.1063/1.5133476","_id":"22054","date_updated":"2022-01-06T06:55:23Z"},{"date_created":"2021-05-09T06:33:08Z","status":"public","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"department":[{"_id":"15"},{"_id":"230"}],"publication":"Journal of Applied Physics","author":[{"last_name":"Spychala","full_name":"Spychala, K. J.","first_name":"K. J."},{"first_name":"P.","full_name":"Mackwitz, P.","last_name":"Mackwitz"},{"last_name":"Rüsing","id":"22501","first_name":"Michael","full_name":"Rüsing, Michael","orcid":"0000-0003-4682-4577"},{"full_name":"Widhalm, A.","first_name":"A.","last_name":"Widhalm"},{"last_name":"Berth","id":"53","first_name":"Gerhard","full_name":"Berth, Gerhard"},{"id":"26263","last_name":"Silberhorn","full_name":"Silberhorn, Christine","first_name":"Christine"},{"first_name":"Artur","orcid":"0000-0002-5190-0944","full_name":"Zrenner, Artur","last_name":"Zrenner","id":"606"}],"user_id":"14931","title":"Nonlinear focal mapping of ferroelectric domain walls in LiNbO3: Analysis of the SHG microscopy contrast mechanism","language":[{"iso":"eng"}],"type":"journal_article","year":"2020","citation":{"mla":"Spychala, K. J., et al. “Nonlinear Focal Mapping of Ferroelectric Domain Walls in LiNbO3: Analysis of the SHG Microscopy Contrast Mechanism.” Journal of Applied Physics, 234102, 2020, doi:10.1063/5.0025284.","bibtex":"@article{Spychala_Mackwitz_Rüsing_Widhalm_Berth_Silberhorn_Zrenner_2020, title={Nonlinear focal mapping of ferroelectric domain walls in LiNbO3: Analysis of the SHG microscopy contrast mechanism}, DOI={10.1063/5.0025284}, number={234102}, journal={Journal of Applied Physics}, author={Spychala, K. J. and Mackwitz, P. and Rüsing, Michael and Widhalm, A. and Berth, Gerhard and Silberhorn, Christine and Zrenner, Artur}, year={2020} }","chicago":"Spychala, K. J., P. Mackwitz, Michael Rüsing, A. Widhalm, Gerhard Berth, Christine Silberhorn, and Artur Zrenner. “Nonlinear Focal Mapping of Ferroelectric Domain Walls in LiNbO3: Analysis of the SHG Microscopy Contrast Mechanism.” Journal of Applied Physics, 2020. https://doi.org/10.1063/5.0025284.","ama":"Spychala KJ, Mackwitz P, Rüsing M, et al. Nonlinear focal mapping of ferroelectric domain walls in LiNbO3: Analysis of the SHG microscopy contrast mechanism. Journal of Applied Physics. Published online 2020. doi:10.1063/5.0025284","apa":"Spychala, K. J., Mackwitz, P., Rüsing, M., Widhalm, A., Berth, G., Silberhorn, C., & Zrenner, A. (2020). Nonlinear focal mapping of ferroelectric domain walls in LiNbO3: Analysis of the SHG microscopy contrast mechanism. Journal of Applied Physics, Article 234102. https://doi.org/10.1063/5.0025284","ieee":"K. J. Spychala et al., “Nonlinear focal mapping of ferroelectric domain walls in LiNbO3: Analysis of the SHG microscopy contrast mechanism,” Journal of Applied Physics, Art. no. 234102, 2020, doi: 10.1063/5.0025284.","short":"K.J. Spychala, P. Mackwitz, M. Rüsing, A. Widhalm, G. Berth, C. Silberhorn, A. Zrenner, Journal of Applied Physics (2020)."},"doi":"10.1063/5.0025284","article_number":"234102","date_updated":"2023-10-09T08:07:57Z","_id":"22056"},{"title":"Poling thin-film x-cut lithium niobate for quasi-phase matching with sub-micrometer periodicity","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","date_updated":"2023-10-11T08:07:28Z","doi":"10.1063/1.5143266","language":[{"iso":"eng"}],"article_type":"original","abstract":[{"lang":"eng","text":"Quasi-phase-matched grating structures in lithium niobate waveguides with sub-micrometer periodicities will benefit the development of short-wavelength nonlinear optical devices. Here, we report on the reproducible formation of periodically poled domains in x-cut single-crystalline thin-film lithium niobate with periodicities as short as 600 nm. Shaped single-voltage poling pulses were applied to electrode structures that were fabricated by a combination of electron-beam and direct-writing laser lithography. Evidence of successful poling with good quality was obtained through second-harmonic microscopy and piezoresponse force microscopy imaging. For the sub-micrometer period structures, we observed patterns with a double periodicity formed by domain interactions and features with sizes <200 nm."}],"user_id":"22501","author":[{"last_name":"Zhao","full_name":"Zhao, Jie","first_name":"Jie"},{"id":"22501","last_name":"Rüsing","orcid":"0000-0003-4682-4577","full_name":"Rüsing, Michael","first_name":"Michael"},{"last_name":"Roeper","full_name":"Roeper, Matthias","first_name":"Matthias"},{"last_name":"Eng","first_name":"Lukas M.","full_name":"Eng, Lukas M."},{"full_name":"Mookherjea, Shayan","first_name":"Shayan","last_name":"Mookherjea"}],"publisher":"AIP Publishing","publication":"Journal of Applied Physics","keyword":["General Physics and Astronomy"],"volume":127,"status":"public","date_created":"2023-10-11T08:06:39Z","intvolume":" 127","_id":"47955","article_number":"193104","issue":"19","year":"2020","citation":{"mla":"Zhao, Jie, et al. “Poling Thin-Film x-Cut Lithium Niobate for Quasi-Phase Matching with Sub-Micrometer Periodicity.” Journal of Applied Physics, vol. 127, no. 19, 193104, AIP Publishing, 2020, doi:10.1063/1.5143266.","bibtex":"@article{Zhao_Rüsing_Roeper_Eng_Mookherjea_2020, title={Poling thin-film x-cut lithium niobate for quasi-phase matching with sub-micrometer periodicity}, volume={127}, DOI={10.1063/1.5143266}, number={19193104}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zhao, Jie and Rüsing, Michael and Roeper, Matthias and Eng, Lukas M. and Mookherjea, Shayan}, year={2020} }","chicago":"Zhao, Jie, Michael Rüsing, Matthias Roeper, Lukas M. Eng, and Shayan Mookherjea. “Poling Thin-Film x-Cut Lithium Niobate for Quasi-Phase Matching with Sub-Micrometer Periodicity.” Journal of Applied Physics 127, no. 19 (2020). https://doi.org/10.1063/1.5143266.","ama":"Zhao J, Rüsing M, Roeper M, Eng LM, Mookherjea S. Poling thin-film x-cut lithium niobate for quasi-phase matching with sub-micrometer periodicity. Journal of Applied Physics. 2020;127(19). doi:10.1063/1.5143266","apa":"Zhao, J., Rüsing, M., Roeper, M., Eng, L. M., & Mookherjea, S. (2020). Poling thin-film x-cut lithium niobate for quasi-phase matching with sub-micrometer periodicity. Journal of Applied Physics, 127(19), Article 193104. https://doi.org/10.1063/1.5143266","ieee":"J. Zhao, M. Rüsing, M. Roeper, L. M. Eng, and S. Mookherjea, “Poling thin-film x-cut lithium niobate for quasi-phase matching with sub-micrometer periodicity,” Journal of Applied Physics, vol. 127, no. 19, Art. no. 193104, 2020, doi: 10.1063/1.5143266.","short":"J. Zhao, M. Rüsing, M. Roeper, L.M. Eng, S. Mookherjea, Journal of Applied Physics 127 (2020)."},"type":"journal_article"},{"language":[{"iso":"eng"}],"citation":{"bibtex":"@article{Deppe_Gerlach_Shvarkov_Rogalla_Becker_Reuter_As_2019, title={Germanium doping of cubic GaN grown by molecular beam epitaxy}, DOI={10.1063/1.5066095}, number={095703}, journal={Journal of Applied Physics}, author={Deppe, M. and Gerlach, J. W. and Shvarkov, S. and Rogalla, D. and Becker, H.-W. and Reuter, Dirk and As, Donat Josef}, year={2019} }","mla":"Deppe, M., et al. “Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy.” Journal of Applied Physics, 095703, 2019, doi:10.1063/1.5066095.","chicago":"Deppe, M., J. W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, Dirk Reuter, and Donat Josef As. “Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy.” Journal of Applied Physics, 2019. https://doi.org/10.1063/1.5066095.","apa":"Deppe, M., Gerlach, J. W., Shvarkov, S., Rogalla, D., Becker, H.-W., Reuter, D., & As, D. J. (2019). Germanium doping of cubic GaN grown by molecular beam epitaxy. Journal of Applied Physics. https://doi.org/10.1063/1.5066095","ama":"Deppe M, Gerlach JW, Shvarkov S, et al. Germanium doping of cubic GaN grown by molecular beam epitaxy. Journal of Applied Physics. 2019. doi:10.1063/1.5066095","ieee":"M. Deppe et al., “Germanium doping of cubic GaN grown by molecular beam epitaxy,” Journal of Applied Physics, 2019.","short":"M. Deppe, J.W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, D. Reuter, D.J. As, Journal of Applied Physics (2019)."},"year":"2019","type":"journal_article","date_updated":"2022-01-06T07:03:58Z","_id":"8646","doi":"10.1063/1.5066095","article_number":"095703","department":[{"_id":"230"},{"_id":"429"}],"publication":"Journal of Applied Physics","author":[{"last_name":"Deppe","first_name":"M.","full_name":"Deppe, M."},{"first_name":"J. W.","full_name":"Gerlach, J. W.","last_name":"Gerlach"},{"first_name":"S.","full_name":"Shvarkov, S.","last_name":"Shvarkov"},{"first_name":"D.","full_name":"Rogalla, D.","last_name":"Rogalla"},{"last_name":"Becker","first_name":"H.-W.","full_name":"Becker, H.-W."},{"last_name":"Reuter","id":"37763","first_name":"Dirk","full_name":"Reuter, Dirk"},{"first_name":"Donat Josef","orcid":"0000-0003-1121-3565","full_name":"As, Donat Josef","last_name":"As","id":"14"}],"date_created":"2019-03-26T12:48:57Z","project":[{"name":"TRR 142 - Subproject B2","_id":"67"}],"status":"public","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"user_id":"14","title":"Germanium doping of cubic GaN grown by molecular beam epitaxy"},{"intvolume":" 125","_id":"9698","article_number":"073103","issue":"7","type":"journal_article","year":"2019","citation":{"short":"C. Golla, N. Weber, C. Meier, Journal of Applied Physics 125 (2019).","ieee":"C. Golla, N. Weber, and C. Meier, “Zinc oxide based dielectric nanoantennas for efficient nonlinear frequency conversion,” Journal of Applied Physics, vol. 125, no. 7, 2019.","chicago":"Golla, C., N. Weber, and Cedrik Meier. “Zinc Oxide Based Dielectric Nanoantennas for Efficient Nonlinear Frequency Conversion.” Journal of Applied Physics 125, no. 7 (2019). https://doi.org/10.1063/1.5082720.","ama":"Golla C, Weber N, Meier C. Zinc oxide based dielectric nanoantennas for efficient nonlinear frequency conversion. Journal of Applied Physics. 2019;125(7). doi:10.1063/1.5082720","apa":"Golla, C., Weber, N., & Meier, C. (2019). Zinc oxide based dielectric nanoantennas for efficient nonlinear frequency conversion. Journal of Applied Physics, 125(7). https://doi.org/10.1063/1.5082720","bibtex":"@article{Golla_Weber_Meier_2019, title={Zinc oxide based dielectric nanoantennas for efficient nonlinear frequency conversion}, volume={125}, DOI={10.1063/1.5082720}, number={7073103}, journal={Journal of Applied Physics}, author={Golla, C. and Weber, N. and Meier, Cedrik}, year={2019} }","mla":"Golla, C., et al. “Zinc Oxide Based Dielectric Nanoantennas for Efficient Nonlinear Frequency Conversion.” Journal of Applied Physics, vol. 125, no. 7, 073103, 2019, doi:10.1063/1.5082720."},"user_id":"20798","author":[{"last_name":"Golla","full_name":"Golla, C.","first_name":"C."},{"full_name":"Weber, N.","first_name":"N.","last_name":"Weber"},{"first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","last_name":"Meier","id":"20798"}],"publication":"Journal of Applied Physics","volume":125,"status":"public","date_created":"2019-05-08T07:06:11Z","date_updated":"2022-01-06T07:04:18Z","doi":"10.1063/1.5082720","language":[{"iso":"eng"}],"title":"Zinc oxide based dielectric nanoantennas for efficient nonlinear frequency conversion","department":[{"_id":"15"},{"_id":"35"},{"_id":"287"},{"_id":"230"}],"publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"project":[{"_id":"53","name":"TRR 142"},{"_id":"55","name":"TRR 142 - Project Area B"},{"_id":"66","name":"TRR 142 - Subproject B1"},{"_id":"56","name":"TRR 142 - Project Area C"},{"_id":"75","name":"TRR 142 - Subproject C5"}]},{"author":[{"first_name":"Maximilian","full_name":"Protte, Maximilian","last_name":"Protte"},{"first_name":"Nils","full_name":"Weber, Nils","last_name":"Weber"},{"first_name":"Christian","full_name":"Golla, Christian","last_name":"Golla"},{"first_name":"Thomas","full_name":"Zentgraf, Thomas","orcid":"0000-0002-8662-1101","last_name":"Zentgraf","id":"30525"},{"id":"20798","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","first_name":"Cedrik"}],"publication":"Journal of Applied Physics","department":[{"_id":"15"},{"_id":"287"},{"_id":"35"},{"_id":"230"},{"_id":"289"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"volume":125,"publication_status":"published","status":"public","project":[{"_id":"53","name":"TRR 142"},{"name":"TRR 142 - Project Area B","_id":"55"},{"name":"TRR 142 - Subproject B1","_id":"66"},{"_id":"56","name":"TRR 142 - Project Area C"},{"name":"TRR 142 - Subproject C5","_id":"75"}],"date_created":"2019-05-21T08:35:49Z","title":"Strong nonlinear optical response from ZnO by coupled and lattice-matched nanoantennas","user_id":"30525","type":"journal_article","year":"2019","citation":{"mla":"Protte, Maximilian, et al. “Strong Nonlinear Optical Response from ZnO by Coupled and Lattice-Matched Nanoantennas.” Journal of Applied Physics, vol. 125, 193104, 2019, doi:10.1063/1.5093257.","bibtex":"@article{Protte_Weber_Golla_Zentgraf_Meier_2019, title={Strong nonlinear optical response from ZnO by coupled and lattice-matched nanoantennas}, volume={125}, DOI={10.1063/1.5093257}, number={193104}, journal={Journal of Applied Physics}, author={Protte, Maximilian and Weber, Nils and Golla, Christian and Zentgraf, Thomas and Meier, Cedrik}, year={2019} }","chicago":"Protte, Maximilian, Nils Weber, Christian Golla, Thomas Zentgraf, and Cedrik Meier. “Strong Nonlinear Optical Response from ZnO by Coupled and Lattice-Matched Nanoantennas.” Journal of Applied Physics 125 (2019). https://doi.org/10.1063/1.5093257.","apa":"Protte, M., Weber, N., Golla, C., Zentgraf, T., & Meier, C. (2019). Strong nonlinear optical response from ZnO by coupled and lattice-matched nanoantennas. Journal of Applied Physics, 125. https://doi.org/10.1063/1.5093257","ama":"Protte M, Weber N, Golla C, Zentgraf T, Meier C. Strong nonlinear optical response from ZnO by coupled and lattice-matched nanoantennas. Journal of Applied Physics. 2019;125. doi:10.1063/1.5093257","ieee":"M. Protte, N. Weber, C. Golla, T. Zentgraf, and C. Meier, “Strong nonlinear optical response from ZnO by coupled and lattice-matched nanoantennas,” Journal of Applied Physics, vol. 125, 2019.","short":"M. Protte, N. Weber, C. Golla, T. Zentgraf, C. Meier, Journal of Applied Physics 125 (2019)."},"language":[{"iso":"eng"}],"date_updated":"2020-08-21T13:52:51Z","_id":"9897","intvolume":" 125","article_number":"193104","doi":"10.1063/1.5093257"},{"language":[{"iso":"eng"}],"type":"journal_article","year":"2019","citation":{"chicago":"Buß, J. H., T. Schupp, Donat Josef As, D. Hägele, and J. Rudolph. “Optical Excitation Density Dependence of Spin Dynamics in Bulk Cubic GaN.” Journal of Applied Physics, 2019. https://doi.org/10.1063/1.5123914.","ama":"Buß JH, Schupp T, As DJ, Hägele D, Rudolph J. Optical excitation density dependence of spin dynamics in bulk cubic GaN. Journal of Applied Physics. 2019. doi:10.1063/1.5123914","apa":"Buß, J. H., Schupp, T., As, D. J., Hägele, D., & Rudolph, J. (2019). Optical excitation density dependence of spin dynamics in bulk cubic GaN. Journal of Applied Physics. https://doi.org/10.1063/1.5123914","bibtex":"@article{Buß_Schupp_As_Hägele_Rudolph_2019, title={Optical excitation density dependence of spin dynamics in bulk cubic GaN}, DOI={10.1063/1.5123914}, number={153901}, journal={Journal of Applied Physics}, author={Buß, J. H. and Schupp, T. and As, Donat Josef and Hägele, D. and Rudolph, J.}, year={2019} }","mla":"Buß, J. H., et al. “Optical Excitation Density Dependence of Spin Dynamics in Bulk Cubic GaN.” Journal of Applied Physics, 153901, 2019, doi:10.1063/1.5123914.","short":"J.H. Buß, T. Schupp, D.J. As, D. Hägele, J. Rudolph, Journal of Applied Physics (2019).","ieee":"J. H. Buß, T. Schupp, D. J. As, D. Hägele, and J. Rudolph, “Optical excitation density dependence of spin dynamics in bulk cubic GaN,” Journal of Applied Physics, 2019."},"date_updated":"2022-01-06T06:51:48Z","_id":"13965","doi":"10.1063/1.5123914","article_number":"153901","department":[{"_id":"230"},{"_id":"429"}],"publication":"Journal of Applied Physics","author":[{"last_name":"Buß","first_name":"J. H.","full_name":"Buß, J. H."},{"first_name":"T.","full_name":"Schupp, T.","last_name":"Schupp"},{"orcid":"0000-0003-1121-3565","full_name":"As, Donat Josef","first_name":"Donat Josef","id":"14","last_name":"As"},{"first_name":"D.","full_name":"Hägele, D.","last_name":"Hägele"},{"last_name":"Rudolph","full_name":"Rudolph, J.","first_name":"J."}],"date_created":"2019-10-22T12:26:02Z","status":"public","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","user_id":"14","title":"Optical excitation density dependence of spin dynamics in bulk cubic GaN"},{"user_id":"22501","abstract":[{"lang":"eng","text":"Thin film lithium niobate has been of great interest recently, and an understanding of periodically poled thin films is crucial for both fundamental physics and device developments. Second-harmonic (SH) microscopy allows for the noninvasive visualization and analysis of ferroelectric domain structures and walls. While the technique is well understood in bulk lithium niobate, SH microscopy in thin films is largely influenced by interfacial reflections and resonant enhancements, which depend on film thicknesses and substrate materials. We present a comprehensive analysis of SH microscopy in x-cut lithium niobate thin films, based on a full three-dimensional focus calculation and accounting for interface reflections. We show that the dominant signal in backreflection originates from a copropagating phase-matched process observed through reflections, rather than direct detection of the counterpropagating signal as in bulk samples. We simulate the SH signatures of domain structures by a simple model of the domain wall as an extensionless transition from a −χ(2) to a +χ(2) region. This allows us to explain the main observation of domain structures in the thin-film geometry, and, in particular, we show that the SH signal from thin poled films allows to unambiguously distinguish areas, which are completely or only partly inverted in depth."}],"extern":"1","date_created":"2023-10-11T07:47:03Z","status":"public","volume":126,"keyword":["General Physics and Astronomy"],"publication":"Journal of Applied Physics","author":[{"id":"22501","last_name":"Rüsing","full_name":"Rüsing, Michael","orcid":"0000-0003-4682-4577","first_name":"Michael"},{"last_name":"Zhao","full_name":"Zhao, J.","first_name":"J."},{"last_name":"Mookherjea","first_name":"S.","full_name":"Mookherjea, S."}],"publisher":"AIP Publishing","issue":"11","article_number":"114105","_id":"47951","intvolume":" 126","type":"journal_article","citation":{"short":"M. Rüsing, J. Zhao, S. Mookherjea, Journal of Applied Physics 126 (2019).","ieee":"M. Rüsing, J. Zhao, and S. Mookherjea, “Second harmonic microscopy of poled x-cut thin film lithium niobate: Understanding the contrast mechanism,” Journal of Applied Physics, vol. 126, no. 11, Art. no. 114105, 2019, doi: 10.1063/1.5113727.","chicago":"Rüsing, Michael, J. Zhao, and S. Mookherjea. “Second Harmonic Microscopy of Poled X-Cut Thin Film Lithium Niobate: Understanding the Contrast Mechanism.” Journal of Applied Physics 126, no. 11 (2019). https://doi.org/10.1063/1.5113727.","ama":"Rüsing M, Zhao J, Mookherjea S. Second harmonic microscopy of poled x-cut thin film lithium niobate: Understanding the contrast mechanism. Journal of Applied Physics. 2019;126(11). doi:10.1063/1.5113727","apa":"Rüsing, M., Zhao, J., & Mookherjea, S. (2019). Second harmonic microscopy of poled x-cut thin film lithium niobate: Understanding the contrast mechanism. Journal of Applied Physics, 126(11), Article 114105. https://doi.org/10.1063/1.5113727","bibtex":"@article{Rüsing_Zhao_Mookherjea_2019, title={Second harmonic microscopy of poled x-cut thin film lithium niobate: Understanding the contrast mechanism}, volume={126}, DOI={10.1063/1.5113727}, number={11114105}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Rüsing, Michael and Zhao, J. and Mookherjea, S.}, year={2019} }","mla":"Rüsing, Michael, et al. “Second Harmonic Microscopy of Poled X-Cut Thin Film Lithium Niobate: Understanding the Contrast Mechanism.” Journal of Applied Physics, vol. 126, no. 11, 114105, AIP Publishing, 2019, doi:10.1063/1.5113727."},"year":"2019","main_file_link":[{"open_access":"1","url":"https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.5113727/15233243/114105_1_online.pdf"}],"title":"Second harmonic microscopy of poled x-cut thin film lithium niobate: Understanding the contrast mechanism","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"oa":"1","doi":"10.1063/1.5113727","date_updated":"2023-10-11T07:48:11Z","language":[{"iso":"eng"}]},{"user_id":"82901","publication":"Journal of Applied Physics","publisher":"AIP Publishing","author":[{"first_name":"N.","full_name":"Weber, N.","last_name":"Weber"},{"last_name":"Hoffmann","full_name":"Hoffmann, S. P.","first_name":"S. P."},{"last_name":"Albert","full_name":"Albert, M.","first_name":"M."},{"full_name":"Zentgraf, Thomas","orcid":"0000-0002-8662-1101","first_name":"Thomas","id":"30525","last_name":"Zentgraf"},{"last_name":"Meier","id":"20798","first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik"}],"date_created":"2018-03-16T08:41:10Z","status":"public","volume":123,"_id":"1327","intvolume":" 123","issue":"10","article_number":"103101","type":"journal_article","year":"2018","citation":{"mla":"Weber, N., et al. “Efficient Frequency Conversion by Combined Photonic–Plasmonic Mode Coupling.” Journal of Applied Physics, vol. 123, no. 10, 103101, AIP Publishing, 2018, doi:10.1063/1.5017010.","bibtex":"@article{Weber_Hoffmann_Albert_Zentgraf_Meier_2018, title={Efficient frequency conversion by combined photonic–plasmonic mode coupling}, volume={123}, DOI={10.1063/1.5017010}, number={10103101}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Weber, N. and Hoffmann, S. P. and Albert, M. and Zentgraf, Thomas and Meier, Cedrik}, year={2018} }","chicago":"Weber, N., S. P. Hoffmann, M. Albert, Thomas Zentgraf, and Cedrik Meier. “Efficient Frequency Conversion by Combined Photonic–Plasmonic Mode Coupling.” Journal of Applied Physics 123, no. 10 (2018). https://doi.org/10.1063/1.5017010.","ama":"Weber N, Hoffmann SP, Albert M, Zentgraf T, Meier C. Efficient frequency conversion by combined photonic–plasmonic mode coupling. Journal of Applied Physics. 2018;123(10). doi:10.1063/1.5017010","apa":"Weber, N., Hoffmann, S. P., Albert, M., Zentgraf, T., & Meier, C. (2018). Efficient frequency conversion by combined photonic–plasmonic mode coupling. Journal of Applied Physics, 123(10). https://doi.org/10.1063/1.5017010","ieee":"N. Weber, S. P. Hoffmann, M. Albert, T. Zentgraf, and C. Meier, “Efficient frequency conversion by combined photonic–plasmonic mode coupling,” Journal of Applied Physics, vol. 123, no. 10, 2018.","short":"N. Weber, S.P. Hoffmann, M. Albert, T. Zentgraf, C. Meier, Journal of Applied Physics 123 (2018)."},"title":"Efficient frequency conversion by combined photonic–plasmonic mode coupling","department":[{"_id":"15"},{"_id":"230"},{"_id":"287"},{"_id":"35"},{"_id":"289"}],"project":[{"name":"TRR 142","_id":"53"},{"name":"TRR 142 - Project Area C","_id":"56"},{"name":"TRR 142 - Subproject C5","_id":"75"},{"_id":"54","name":"TRR 142 - Project Area A"},{"name":"TRR 142 - Subproject A5","_id":"62"}],"publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"date_updated":"2022-01-06T06:51:31Z","doi":"10.1063/1.5017010","language":[{"iso":"eng"}]},{"author":[{"last_name":"Layes","first_name":"Vincent","full_name":"Layes, Vincent"},{"full_name":"Monje, Sascha","first_name":"Sascha","last_name":"Monje"},{"full_name":"Corbella, Carles","first_name":"Carles","last_name":"Corbella"},{"last_name":"Schulz-von der Gathen","first_name":"Volker","full_name":"Schulz-von der Gathen, Volker"},{"last_name":"von Keudell","full_name":"von Keudell, Achim","first_name":"Achim"},{"last_name":"de los Arcos de Pedro","id":"54556","first_name":"Maria Teresa","full_name":"de los Arcos de Pedro, Maria Teresa"}],"publication":"Journal of Applied Physics","department":[{"_id":"302"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","status":"public","date_created":"2021-07-07T09:08:54Z","title":"Composite targets in HiPIMS plasmas: Correlation of in-vacuum XPS characterization and optical plasma diagnostics","user_id":"54556","citation":{"mla":"Layes, Vincent, et al. “Composite Targets in HiPIMS Plasmas: Correlation of in-Vacuum XPS Characterization and Optical Plasma Diagnostics.” Journal of Applied Physics, 171912, 2017, doi:10.1063/1.4977820.","bibtex":"@article{Layes_Monje_Corbella_Schulz-von der Gathen_von Keudell_de los Arcos de Pedro_2017, title={Composite targets in HiPIMS plasmas: Correlation of in-vacuum XPS characterization and optical plasma diagnostics}, DOI={10.1063/1.4977820}, number={171912}, journal={Journal of Applied Physics}, author={Layes, Vincent and Monje, Sascha and Corbella, Carles and Schulz-von der Gathen, Volker and von Keudell, Achim and de los Arcos de Pedro, Maria Teresa}, year={2017} }","apa":"Layes, V., Monje, S., Corbella, C., Schulz-von der Gathen, V., von Keudell, A., & de los Arcos de Pedro, M. T. (2017). Composite targets in HiPIMS plasmas: Correlation of in-vacuum XPS characterization and optical plasma diagnostics. Journal of Applied Physics, Article 171912. https://doi.org/10.1063/1.4977820","ama":"Layes V, Monje S, Corbella C, Schulz-von der Gathen V, von Keudell A, de los Arcos de Pedro MT. Composite targets in HiPIMS plasmas: Correlation of in-vacuum XPS characterization and optical plasma diagnostics. Journal of Applied Physics. Published online 2017. doi:10.1063/1.4977820","chicago":"Layes, Vincent, Sascha Monje, Carles Corbella, Volker Schulz-von der Gathen, Achim von Keudell, and Maria Teresa de los Arcos de Pedro. “Composite Targets in HiPIMS Plasmas: Correlation of in-Vacuum XPS Characterization and Optical Plasma Diagnostics.” Journal of Applied Physics, 2017. https://doi.org/10.1063/1.4977820.","ieee":"V. Layes, S. Monje, C. Corbella, V. Schulz-von der Gathen, A. von Keudell, and M. T. de los Arcos de Pedro, “Composite targets in HiPIMS plasmas: Correlation of in-vacuum XPS characterization and optical plasma diagnostics,” Journal of Applied Physics, Art. no. 171912, 2017, doi: 10.1063/1.4977820.","short":"V. Layes, S. Monje, C. Corbella, V. Schulz-von der Gathen, A. von Keudell, M.T. de los Arcos de Pedro, Journal of Applied Physics (2017)."},"type":"journal_article","year":"2017","language":[{"iso":"eng"}],"date_updated":"2023-01-24T08:14:07Z","_id":"22569","article_number":"171912","doi":"10.1063/1.4977820"},{"date_updated":"2022-01-06T07:01:25Z","_id":"4815","intvolume":" 120","article_number":"103901","doi":"10.1063/1.4962275","issue":"10","citation":{"ama":"Righetti VAN, Gratens X, Chitta VA, et al. Magnetic and structural properties of Fe-implanted cubic GaN. Journal of Applied Physics. 2016;120(10). doi:10.1063/1.4962275","apa":"Righetti, V. A. N., Gratens, X., Chitta, V. A., de Godoy, M. P. F., Rodrigues, A. D., Abramof, E., … Lischka, K. (2016). Magnetic and structural properties of Fe-implanted cubic GaN. Journal of Applied Physics, 120(10). https://doi.org/10.1063/1.4962275","chicago":"Righetti, V. A. N., X. Gratens, V. A. Chitta, M. P. F. de Godoy, A. D. Rodrigues, E. Abramof, J. F. Dias, D. Schikora, Donat Josef As, and K. Lischka. “Magnetic and Structural Properties of Fe-Implanted Cubic GaN.” Journal of Applied Physics 120, no. 10 (2016). https://doi.org/10.1063/1.4962275.","bibtex":"@article{Righetti_Gratens_Chitta_de Godoy_Rodrigues_Abramof_Dias_Schikora_As_Lischka_2016, title={Magnetic and structural properties of Fe-implanted cubic GaN}, volume={120}, DOI={10.1063/1.4962275}, number={10103901}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Righetti, V. A. N. and Gratens, X. and Chitta, V. A. and de Godoy, M. P. F. and Rodrigues, A. D. and Abramof, E. and Dias, J. F. and Schikora, D. and As, Donat Josef and Lischka, K.}, year={2016} }","mla":"Righetti, V. A. N., et al. “Magnetic and Structural Properties of Fe-Implanted Cubic GaN.” Journal of Applied Physics, vol. 120, no. 10, 103901, AIP Publishing, 2016, doi:10.1063/1.4962275.","short":"V.A.N. Righetti, X. Gratens, V.A. Chitta, M.P.F. de Godoy, A.D. Rodrigues, E. Abramof, J.F. Dias, D. Schikora, D.J. As, K. Lischka, Journal of Applied Physics 120 (2016).","ieee":"V. A. N. Righetti et al., “Magnetic and structural properties of Fe-implanted cubic GaN,” Journal of Applied Physics, vol. 120, no. 10, 2016."},"type":"journal_article","year":"2016","title":"Magnetic and structural properties of Fe-implanted cubic GaN","user_id":"14","publisher":"AIP Publishing","author":[{"first_name":"V. A. N.","full_name":"Righetti, V. A. N.","last_name":"Righetti"},{"last_name":"Gratens","first_name":"X.","full_name":"Gratens, X."},{"full_name":"Chitta, V. A.","first_name":"V. A.","last_name":"Chitta"},{"last_name":"de Godoy","first_name":"M. P. F.","full_name":"de Godoy, M. P. F."},{"last_name":"Rodrigues","first_name":"A. D.","full_name":"Rodrigues, A. D."},{"last_name":"Abramof","full_name":"Abramof, E.","first_name":"E."},{"last_name":"Dias","first_name":"J. F.","full_name":"Dias, J. F."},{"first_name":"D.","full_name":"Schikora, D.","last_name":"Schikora"},{"id":"14","last_name":"As","orcid":"0000-0003-1121-3565","full_name":"As, Donat Josef","first_name":"Donat Josef"},{"last_name":"Lischka","full_name":"Lischka, K.","first_name":"K."}],"publication":"Journal of Applied Physics","publication_status":"published","volume":120,"publication_identifier":{"issn":["0021-8979","1089-7550"]},"status":"public","date_created":"2018-10-24T08:05:48Z"},{"title":"Identification of ferroelectric domain structure sensitive phonon modes in potassium titanyl phosphate: A fundamental study","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"288"}],"project":[{"_id":"53","name":"TRR 142","grant_number":"231447078"},{"name":"TRR 142 - Project Area B","_id":"55"},{"name":"TRR 142 - Subproject B3","grant_number":"231447078","_id":"68"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","date_updated":"2023-10-09T08:32:15Z","doi":"10.1063/1.4940964","language":[{"iso":"eng"}],"article_type":"original","abstract":[{"text":"Confocal Raman spectroscopy is applied to identify ferroelectric domain structure sensitive\r\nphonon modes in potassium titanyl phosphate. Therefore, polarization-dependent measurements in\r\nvarious scattering configurations have been performed to characterize the fundamental Raman\r\nspectra of the material. The obtained spectra are discussed qualitatively based on an internal mode\r\nassignment. In the main part of this work, we have characterized z-cut periodically poled potassium\r\ntitanyl phosphate in terms of polarity- and structure-sensitive phonon modes. Here, we find vibrations\r\nwhose intensities are linked to the ferroelectric domain walls. We interpret this in terms of\r\nchanges in the polarizability originating from strain induced by domain boundaries and the inner\r\nfield distribution. Hence, a direct and 3D visualization of ferroelectric domain structures becomes\r\npossible in potassium titanyl phosphate.","lang":"eng"}],"user_id":"14931","publisher":"AIP Publishing","author":[{"last_name":"Rüsing","id":"22501","first_name":"Michael","orcid":"0000-0003-4682-4577","full_name":"Rüsing, Michael"},{"id":"13244","last_name":"Eigner","orcid":"https://orcid.org/0000-0002-5693-3083","full_name":"Eigner, Christof","first_name":"Christof"},{"last_name":"Mackwitz","full_name":"Mackwitz, P.","first_name":"P."},{"full_name":"Berth, Gerhard","first_name":"Gerhard","id":"53","last_name":"Berth"},{"first_name":"Christine","full_name":"Silberhorn, Christine","last_name":"Silberhorn","id":"26263"},{"first_name":"Artur","full_name":"Zrenner, Artur","orcid":"0000-0002-5190-0944","last_name":"Zrenner","id":"606"}],"publication":"Journal of Applied Physics","status":"public","date_created":"2018-08-29T08:21:00Z","volume":119,"intvolume":" 119","_id":"4239","issue":"4","article_number":"044103","type":"journal_article","year":"2016","citation":{"chicago":"Rüsing, Michael, Christof Eigner, P. Mackwitz, Gerhard Berth, Christine Silberhorn, and Artur Zrenner. “Identification of Ferroelectric Domain Structure Sensitive Phonon Modes in Potassium Titanyl Phosphate: A Fundamental Study.” Journal of Applied Physics 119, no. 4 (2016). https://doi.org/10.1063/1.4940964.","ama":"Rüsing M, Eigner C, Mackwitz P, Berth G, Silberhorn C, Zrenner A. Identification of ferroelectric domain structure sensitive phonon modes in potassium titanyl phosphate: A fundamental study. Journal of Applied Physics. 2016;119(4). doi:10.1063/1.4940964","apa":"Rüsing, M., Eigner, C., Mackwitz, P., Berth, G., Silberhorn, C., & Zrenner, A. (2016). Identification of ferroelectric domain structure sensitive phonon modes in potassium titanyl phosphate: A fundamental study. Journal of Applied Physics, 119(4), Article 044103. https://doi.org/10.1063/1.4940964","mla":"Rüsing, Michael, et al. “Identification of Ferroelectric Domain Structure Sensitive Phonon Modes in Potassium Titanyl Phosphate: A Fundamental Study.” Journal of Applied Physics, vol. 119, no. 4, 044103, AIP Publishing, 2016, doi:10.1063/1.4940964.","bibtex":"@article{Rüsing_Eigner_Mackwitz_Berth_Silberhorn_Zrenner_2016, title={Identification of ferroelectric domain structure sensitive phonon modes in potassium titanyl phosphate: A fundamental study}, volume={119}, DOI={10.1063/1.4940964}, number={4044103}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Rüsing, Michael and Eigner, Christof and Mackwitz, P. and Berth, Gerhard and Silberhorn, Christine and Zrenner, Artur}, year={2016} }","short":"M. Rüsing, C. Eigner, P. Mackwitz, G. Berth, C. Silberhorn, A. Zrenner, Journal of Applied Physics 119 (2016).","ieee":"M. Rüsing, C. Eigner, P. Mackwitz, G. Berth, C. Silberhorn, and A. Zrenner, “Identification of ferroelectric domain structure sensitive phonon modes in potassium titanyl phosphate: A fundamental study,” Journal of Applied Physics, vol. 119, no. 4, Art. no. 044103, 2016, doi: 10.1063/1.4940964."}},{"status":"public","date_created":"2018-10-24T08:18:32Z","publication_identifier":{"issn":["0021-8979","1089-7550"]},"volume":118,"publication_status":"published","author":[{"first_name":"J. H.","full_name":"Buß, J. H.","last_name":"Buß"},{"last_name":"Schupp","full_name":"Schupp, T.","first_name":"T."},{"first_name":"Donat Josef","full_name":"As, Donat Josef","orcid":"0000-0003-1121-3565","last_name":"As","id":"14"},{"last_name":"Hägele","full_name":"Hägele, D.","first_name":"D."},{"first_name":"J.","full_name":"Rudolph, J.","last_name":"Rudolph"}],"publisher":"AIP Publishing","publication":"Journal of Applied Physics","user_id":"14","title":"Temperature dependence of the electron Landé g-factor in cubic GaN","citation":{"short":"J.H. Buß, T. Schupp, D.J. As, D. Hägele, J. Rudolph, Journal of Applied Physics 118 (2015).","ieee":"J. H. Buß, T. Schupp, D. J. As, D. Hägele, and J. Rudolph, “Temperature dependence of the electron Landé g-factor in cubic GaN,” Journal of Applied Physics, vol. 118, no. 22, 2015.","apa":"Buß, J. H., Schupp, T., As, D. J., Hägele, D., & Rudolph, J. (2015). Temperature dependence of the electron Landé g-factor in cubic GaN. Journal of Applied Physics, 118(22). https://doi.org/10.1063/1.4937128","ama":"Buß JH, Schupp T, As DJ, Hägele D, Rudolph J. Temperature dependence of the electron Landé g-factor in cubic GaN. Journal of Applied Physics. 2015;118(22). doi:10.1063/1.4937128","chicago":"Buß, J. H., T. Schupp, Donat Josef As, D. Hägele, and J. Rudolph. “Temperature Dependence of the Electron Landé G-Factor in Cubic GaN.” Journal of Applied Physics 118, no. 22 (2015). https://doi.org/10.1063/1.4937128.","mla":"Buß, J. H., et al. “Temperature Dependence of the Electron Landé G-Factor in Cubic GaN.” Journal of Applied Physics, vol. 118, no. 22, 225701, AIP Publishing, 2015, doi:10.1063/1.4937128.","bibtex":"@article{Buß_Schupp_As_Hägele_Rudolph_2015, title={Temperature dependence of the electron Landé g-factor in cubic GaN}, volume={118}, DOI={10.1063/1.4937128}, number={22225701}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Buß, J. H. and Schupp, T. and As, Donat Josef and Hägele, D. and Rudolph, J.}, year={2015} }"},"year":"2015","type":"journal_article","issue":"22","article_number":"225701","doi":"10.1063/1.4937128","_id":"4820","intvolume":" 118","date_updated":"2022-01-06T07:01:25Z"},{"intvolume":" 117","_id":"4825","date_updated":"2022-01-06T07:01:25Z","issue":"9","doi":"10.1063/1.4914069","article_number":"093906","citation":{"chicago":"Schaefer, A., J. H. Buß, T. Schupp, A. Zado, Donat Josef As, D. Hägele, and J. Rudolph. “Strain Dependent Electron Spin Dynamics in Bulk Cubic GaN.” Journal of Applied Physics 117, no. 9 (2015). https://doi.org/10.1063/1.4914069.","ama":"Schaefer A, Buß JH, Schupp T, et al. Strain dependent electron spin dynamics in bulk cubic GaN. Journal of Applied Physics. 2015;117(9). doi:10.1063/1.4914069","apa":"Schaefer, A., Buß, J. H., Schupp, T., Zado, A., As, D. J., Hägele, D., & Rudolph, J. (2015). Strain dependent electron spin dynamics in bulk cubic GaN. Journal of Applied Physics, 117(9). https://doi.org/10.1063/1.4914069","mla":"Schaefer, A., et al. “Strain Dependent Electron Spin Dynamics in Bulk Cubic GaN.” Journal of Applied Physics, vol. 117, no. 9, 093906, AIP Publishing, 2015, doi:10.1063/1.4914069.","bibtex":"@article{Schaefer_Buß_Schupp_Zado_As_Hägele_Rudolph_2015, title={Strain dependent electron spin dynamics in bulk cubic GaN}, volume={117}, DOI={10.1063/1.4914069}, number={9093906}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Schaefer, A. and Buß, J. H. and Schupp, T. and Zado, A. and As, Donat Josef and Hägele, D. and Rudolph, J.}, year={2015} }","short":"A. Schaefer, J.H. Buß, T. Schupp, A. Zado, D.J. As, D. Hägele, J. Rudolph, Journal of Applied Physics 117 (2015).","ieee":"A. Schaefer et al., “Strain dependent electron spin dynamics in bulk cubic GaN,” Journal of Applied Physics, vol. 117, no. 9, 2015."},"year":"2015","type":"journal_article","user_id":"14","title":"Strain dependent electron spin dynamics in bulk cubic GaN","publication":"Journal of Applied Physics","author":[{"first_name":"A.","full_name":"Schaefer, A.","last_name":"Schaefer"},{"first_name":"J. H.","full_name":"Buß, J. H.","last_name":"Buß"},{"last_name":"Schupp","full_name":"Schupp, T.","first_name":"T."},{"first_name":"A.","full_name":"Zado, A.","last_name":"Zado"},{"first_name":"Donat Josef","full_name":"As, Donat Josef","orcid":"0000-0003-1121-3565","last_name":"As","id":"14"},{"last_name":"Hägele","first_name":"D.","full_name":"Hägele, D."},{"last_name":"Rudolph","first_name":"J.","full_name":"Rudolph, J."}],"publisher":"AIP Publishing","date_created":"2018-10-24T09:02:29Z","status":"public","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"volume":117},{"issue":"21","article_number":"213105","_id":"1696","intvolume":" 118","year":"2015","citation":{"chicago":"Bader, Christina A., Franziska Zeuner, Manuel H. W. Bader, Thomas Zentgraf, and Cedrik Meier. “Nonlinear Optical Sub-Bandgap Excitation of ZnO-Based Photonic Resonators.” Journal of Applied Physics 118, no. 21 (2015). https://doi.org/10.1063/1.4936768.","ama":"Bader CA, Zeuner F, Bader MHW, Zentgraf T, Meier C. Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators. Journal of Applied Physics. 2015;118(21). doi:10.1063/1.4936768","apa":"Bader, C. A., Zeuner, F., Bader, M. H. W., Zentgraf, T., & Meier, C. (2015). Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators. Journal of Applied Physics, 118(21). https://doi.org/10.1063/1.4936768","mla":"Bader, Christina A., et al. “Nonlinear Optical Sub-Bandgap Excitation of ZnO-Based Photonic Resonators.” Journal of Applied Physics, vol. 118, no. 21, 213105, AIP Publishing, 2015, doi:10.1063/1.4936768.","bibtex":"@article{Bader_Zeuner_Bader_Zentgraf_Meier_2015, title={Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators}, volume={118}, DOI={10.1063/1.4936768}, number={21213105}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Bader, Christina A. and Zeuner, Franziska and Bader, Manuel H. W. and Zentgraf, Thomas and Meier, Cedrik}, year={2015} }","short":"C.A. Bader, F. Zeuner, M.H.W. Bader, T. Zentgraf, C. Meier, Journal of Applied Physics 118 (2015).","ieee":"C. A. Bader, F. Zeuner, M. H. W. Bader, T. Zentgraf, and C. Meier, “Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators,” Journal of Applied Physics, vol. 118, no. 21, 2015."},"type":"journal_article","user_id":"20798","status":"public","date_created":"2018-03-22T18:33:32Z","volume":118,"publisher":"AIP Publishing","author":[{"full_name":"Bader, Christina A.","first_name":"Christina A.","last_name":"Bader"},{"last_name":"Zeuner","first_name":"Franziska","full_name":"Zeuner, Franziska"},{"last_name":"Bader","first_name":"Manuel H. W.","full_name":"Bader, Manuel H. W."},{"orcid":"0000-0002-8662-1101","full_name":"Zentgraf, Thomas","first_name":"Thomas","id":"30525","last_name":"Zentgraf"},{"full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","first_name":"Cedrik","id":"20798","last_name":"Meier"}],"publication":"Journal of Applied Physics","doi":"10.1063/1.4936768","date_updated":"2022-01-06T06:53:00Z","language":[{"iso":"eng"}],"title":"Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators","project":[{"name":"TRR 142","_id":"53"},{"name":"TRR 142 - Project Area A","_id":"54"},{"_id":"62","name":"TRR 142 - Subproject A5"}],"publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"department":[{"_id":"15"},{"_id":"230"},{"_id":"287"},{"_id":"289"},{"_id":"35"}]},{"user_id":"42514","author":[{"last_name":"Lo","full_name":"Lo, Fang-Yuh","first_name":"Fang-Yuh"},{"full_name":"Huang, Cheng-De","first_name":"Cheng-De","last_name":"Huang"},{"first_name":"Kai-Chieh","full_name":"Chou, Kai-Chieh","last_name":"Chou"},{"last_name":"Guo","full_name":"Guo, Jhong-Yu","first_name":"Jhong-Yu"},{"last_name":"Liu","full_name":"Liu, Hsiang-Lin","first_name":"Hsiang-Lin"},{"full_name":"Ney, Verena","first_name":"Verena","last_name":"Ney"},{"full_name":"Ney, Andreas","first_name":"Andreas","last_name":"Ney"},{"first_name":"Stepan","full_name":"Shvarkov, Stepan","last_name":"Shvarkov"},{"last_name":"Pezzagna","full_name":"Pezzagna, Sébastien","first_name":"Sébastien"},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"first_name":"Chi-Ta","full_name":"Chia, Chi-Ta","last_name":"Chia"},{"full_name":"Chern, Ming-Yau","first_name":"Ming-Yau","last_name":"Chern"},{"full_name":"Wieck, Andreas D.","first_name":"Andreas D.","last_name":"Wieck"},{"last_name":"Massies","first_name":"Jean","full_name":"Massies, Jean"}],"publisher":"AIP Publishing","publication":"Journal of Applied Physics","status":"public","date_created":"2019-01-29T12:36:40Z","volume":116,"_id":"7232","intvolume":" 116","issue":"4","article_number":"043909","year":"2014","type":"journal_article","citation":{"short":"F.-Y. Lo, C.-D. Huang, K.-C. Chou, J.-Y. Guo, H.-L. Liu, V. Ney, A. Ney, S. Shvarkov, S. Pezzagna, D. Reuter, C.-T. Chia, M.-Y. Chern, A.D. Wieck, J. Massies, Journal of Applied Physics 116 (2014).","ieee":"F.-Y. Lo et al., “Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films,” Journal of Applied Physics, vol. 116, no. 4, 2014.","ama":"Lo F-Y, Huang C-D, Chou K-C, et al. Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films. Journal of Applied Physics. 2014;116(4). doi:10.1063/1.4891226","apa":"Lo, F.-Y., Huang, C.-D., Chou, K.-C., Guo, J.-Y., Liu, H.-L., Ney, V., … Massies, J. (2014). Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films. Journal of Applied Physics, 116(4). https://doi.org/10.1063/1.4891226","chicago":"Lo, Fang-Yuh, Cheng-De Huang, Kai-Chieh Chou, Jhong-Yu Guo, Hsiang-Lin Liu, Verena Ney, Andreas Ney, et al. “Structural, Optical, and Magnetic Properties of Highly-Resistive Sm-Implanted GaN Thin Films.” Journal of Applied Physics 116, no. 4 (2014). https://doi.org/10.1063/1.4891226.","mla":"Lo, Fang-Yuh, et al. “Structural, Optical, and Magnetic Properties of Highly-Resistive Sm-Implanted GaN Thin Films.” Journal of Applied Physics, vol. 116, no. 4, 043909, AIP Publishing, 2014, doi:10.1063/1.4891226.","bibtex":"@article{Lo_Huang_Chou_Guo_Liu_Ney_Ney_Shvarkov_Pezzagna_Reuter_et al._2014, title={Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films}, volume={116}, DOI={10.1063/1.4891226}, number={4043909}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Lo, Fang-Yuh and Huang, Cheng-De and Chou, Kai-Chieh and Guo, Jhong-Yu and Liu, Hsiang-Lin and Ney, Verena and Ney, Andreas and Shvarkov, Stepan and Pezzagna, Sébastien and Reuter, Dirk and et al.}, year={2014} }"},"title":"Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films","department":[{"_id":"15"},{"_id":"230"}],"publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"date_updated":"2022-01-06T07:03:30Z","doi":"10.1063/1.4891226","language":[{"iso":"eng"}]},{"language":[{"iso":"eng"}],"citation":{"short":"J. Will, A. Gröschel, D. Kot, M.A. Schubert, C. Bergmann, H.-G. Steinrück, G. Kissinger, A. Magerl, Journal of Applied Physics 7 (2013) 073508.","ieee":"J. Will et al., “Oxygen diffusivity in silicon derived from dynamical X-ray diffraction,” Journal of Applied Physics, vol. 7, p. 073508, 2013, doi: 10.1063/1.4792747.","ama":"Will J, Gröschel A, Kot D, et al. Oxygen diffusivity in silicon derived from dynamical X-ray diffraction. Journal of Applied Physics. 2013;7:073508. doi:10.1063/1.4792747","apa":"Will, J., Gröschel, A., Kot, D., Schubert, M. A., Bergmann, C., Steinrück, H.-G., Kissinger, G., & Magerl, A. (2013). Oxygen diffusivity in silicon derived from dynamical X-ray diffraction. Journal of Applied Physics, 7, 073508. https://doi.org/10.1063/1.4792747","chicago":"Will, J., A. Gröschel, D. Kot, M. A. Schubert, C. Bergmann, Hans-Georg Steinrück, G. Kissinger, and A. Magerl. “Oxygen Diffusivity in Silicon Derived from Dynamical X-Ray Diffraction.” Journal of Applied Physics 7 (2013): 073508. https://doi.org/10.1063/1.4792747.","mla":"Will, J., et al. “Oxygen Diffusivity in Silicon Derived from Dynamical X-Ray Diffraction.” Journal of Applied Physics, vol. 7, 2013, p. 073508, doi:10.1063/1.4792747.","bibtex":"@article{Will_Gröschel_Kot_Schubert_Bergmann_Steinrück_Kissinger_Magerl_2013, title={Oxygen diffusivity in silicon derived from dynamical X-ray diffraction}, volume={7}, DOI={10.1063/1.4792747}, journal={Journal of Applied Physics}, author={Will, J. and Gröschel, A. and Kot, D. and Schubert, M. A. and Bergmann, C. and Steinrück, Hans-Georg and Kissinger, G. and Magerl, A.}, year={2013}, pages={073508} }"},"year":"2013","type":"journal_article","page":"073508","doi":"10.1063/1.4792747","_id":"23643","date_updated":"2022-01-06T06:55:57Z","intvolume":" 7","status":"public","date_created":"2021-09-01T09:49:28Z","volume":7,"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","author":[{"last_name":"Will","first_name":"J.","full_name":"Will, J."},{"first_name":"A.","full_name":"Gröschel, A.","last_name":"Gröschel"},{"last_name":"Kot","first_name":"D.","full_name":"Kot, D."},{"first_name":"M. A.","full_name":"Schubert, M. A.","last_name":"Schubert"},{"first_name":"C.","full_name":"Bergmann, C.","last_name":"Bergmann"},{"first_name":"Hans-Georg","orcid":"0000-0001-6373-0877","full_name":"Steinrück, Hans-Georg","last_name":"Steinrück","id":"84268"},{"first_name":"G.","full_name":"Kissinger, G.","last_name":"Kissinger"},{"full_name":"Magerl, A.","first_name":"A.","last_name":"Magerl"}],"publication":"Journal of Applied Physics","department":[{"_id":"633"}],"user_id":"84268","title":"Oxygen diffusivity in silicon derived from dynamical X-ray diffraction"},{"publisher":"AIP Publishing","author":[{"last_name":"Nordendorf","first_name":"Gaby","full_name":"Nordendorf, Gaby"},{"first_name":"Alexander","full_name":"Lorenz, Alexander","last_name":"Lorenz"},{"first_name":"Andreas","full_name":"Hoischen, Andreas","last_name":"Hoischen"},{"last_name":"Schmidtke","full_name":"Schmidtke, Jürgen","first_name":"Jürgen"},{"id":"254","last_name":"Kitzerow","full_name":"Kitzerow, Heinz-Siegfried","first_name":"Heinz-Siegfried"},{"first_name":"David","full_name":"Wilkes, David","last_name":"Wilkes"},{"first_name":"Michael","full_name":"Wittek, Michael","last_name":"Wittek"}],"keyword":["General Physics and Astronomy"],"publication":"Journal of Applied Physics","volume":114,"status":"public","date_created":"2023-01-24T18:31:09Z","user_id":"254","type":"journal_article","year":"2013","citation":{"ieee":"G. Nordendorf et al., “Hysteresis and memory factor of the Kerr effect in blue phases,” Journal of Applied Physics, vol. 114, no. 17, Art. no. 173104, 2013, doi: 10.1063/1.4828477.","short":"G. Nordendorf, A. Lorenz, A. Hoischen, J. Schmidtke, H.-S. Kitzerow, D. Wilkes, M. Wittek, Journal of Applied Physics 114 (2013).","bibtex":"@article{Nordendorf_Lorenz_Hoischen_Schmidtke_Kitzerow_Wilkes_Wittek_2013, title={Hysteresis and memory factor of the Kerr effect in blue phases}, volume={114}, DOI={10.1063/1.4828477}, number={17173104}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Nordendorf, Gaby and Lorenz, Alexander and Hoischen, Andreas and Schmidtke, Jürgen and Kitzerow, Heinz-Siegfried and Wilkes, David and Wittek, Michael}, year={2013} }","mla":"Nordendorf, Gaby, et al. “Hysteresis and Memory Factor of the Kerr Effect in Blue Phases.” Journal of Applied Physics, vol. 114, no. 17, 173104, AIP Publishing, 2013, doi:10.1063/1.4828477.","apa":"Nordendorf, G., Lorenz, A., Hoischen, A., Schmidtke, J., Kitzerow, H.-S., Wilkes, D., & Wittek, M. (2013). Hysteresis and memory factor of the Kerr effect in blue phases. Journal of Applied Physics, 114(17), Article 173104. https://doi.org/10.1063/1.4828477","ama":"Nordendorf G, Lorenz A, Hoischen A, et al. Hysteresis and memory factor of the Kerr effect in blue phases. Journal of Applied Physics. 2013;114(17). doi:10.1063/1.4828477","chicago":"Nordendorf, Gaby, Alexander Lorenz, Andreas Hoischen, Jürgen Schmidtke, Heinz-Siegfried Kitzerow, David Wilkes, and Michael Wittek. “Hysteresis and Memory Factor of the Kerr Effect in Blue Phases.” Journal of Applied Physics 114, no. 17 (2013). https://doi.org/10.1063/1.4828477."},"_id":"39715","intvolume":" 114","article_number":"173104","issue":"17","department":[{"_id":"313"},{"_id":"230"},{"_id":"638"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","title":"Hysteresis and memory factor of the Kerr effect in blue phases","language":[{"iso":"eng"}],"date_updated":"2023-01-24T18:31:34Z","doi":"10.1063/1.4828477"},{"title":"Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films","user_id":"54556","extern":"1","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"status":"public","date_created":"2021-07-07T11:30:38Z","author":[{"first_name":"Marina","full_name":"Prenzel, Marina","last_name":"Prenzel"},{"last_name":"de los Arcos de Pedro","id":"54556","first_name":"Maria Teresa","full_name":"de los Arcos de Pedro, Maria Teresa"},{"full_name":"Kortmann, Annika","first_name":"Annika","last_name":"Kortmann"},{"last_name":"Winter","full_name":"Winter, Jörg","first_name":"Jörg"},{"last_name":"von Keudell","full_name":"von Keudell, Achim","first_name":"Achim"}],"department":[{"_id":"302"}],"publication":"Journal of Applied Physics","article_number":"103306","doi":"10.1063/1.4767383","date_updated":"2023-01-24T08:25:58Z","_id":"22603","citation":{"mla":"Prenzel, Marina, et al. “Embedded Argon as a Tool for Sampling Local Structure in Thin Plasma Deposited Aluminum Oxide Films.” Journal of Applied Physics, 103306, 2012, doi:10.1063/1.4767383.","bibtex":"@article{Prenzel_de los Arcos de Pedro_Kortmann_Winter_von Keudell_2012, title={Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films}, DOI={10.1063/1.4767383}, number={103306}, journal={Journal of Applied Physics}, author={Prenzel, Marina and de los Arcos de Pedro, Maria Teresa and Kortmann, Annika and Winter, Jörg and von Keudell, Achim}, year={2012} }","chicago":"Prenzel, Marina, Maria Teresa de los Arcos de Pedro, Annika Kortmann, Jörg Winter, and Achim von Keudell. “Embedded Argon as a Tool for Sampling Local Structure in Thin Plasma Deposited Aluminum Oxide Films.” Journal of Applied Physics, 2012. https://doi.org/10.1063/1.4767383.","apa":"Prenzel, M., de los Arcos de Pedro, M. T., Kortmann, A., Winter, J., & von Keudell, A. (2012). Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films. Journal of Applied Physics, Article 103306. https://doi.org/10.1063/1.4767383","ama":"Prenzel M, de los Arcos de Pedro MT, Kortmann A, Winter J, von Keudell A. Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films. Journal of Applied Physics. Published online 2012. doi:10.1063/1.4767383","ieee":"M. Prenzel, M. T. de los Arcos de Pedro, A. Kortmann, J. Winter, and A. von Keudell, “Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films,” Journal of Applied Physics, Art. no. 103306, 2012, doi: 10.1063/1.4767383.","short":"M. Prenzel, M.T. de los Arcos de Pedro, A. Kortmann, J. Winter, A. von Keudell, Journal of Applied Physics (2012)."},"year":"2012","type":"journal_article","language":[{"iso":"eng"}]},{"publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"department":[{"_id":"15"},{"_id":"230"}],"title":"Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil","language":[{"iso":"eng"}],"doi":"10.1063/1.3530731","date_updated":"2022-01-06T07:03:45Z","volume":109,"date_created":"2019-02-14T10:41:44Z","status":"public","publication":"Journal of Applied Physics","author":[{"last_name":"Chen","full_name":"Chen, Y. S.","first_name":"Y. S."},{"last_name":"Huang","first_name":"J.","full_name":"Huang, J."},{"full_name":"Ludwig, A.","first_name":"A.","last_name":"Ludwig"},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."},{"full_name":"Bacher, G.","first_name":"G.","last_name":"Bacher"}],"publisher":"AIP Publishing","user_id":"42514","year":"2011","type":"journal_article","citation":{"short":"Y.S. Chen, J. Huang, A. Ludwig, D. Reuter, A.D. Wieck, G. Bacher, Journal of Applied Physics 109 (2011).","ieee":"Y. S. Chen, J. Huang, A. Ludwig, D. Reuter, A. D. Wieck, and G. Bacher, “Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil,” Journal of Applied Physics, vol. 109, no. 1, 2011.","ama":"Chen YS, Huang J, Ludwig A, Reuter D, Wieck AD, Bacher G. Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil. Journal of Applied Physics. 2011;109(1). doi:10.1063/1.3530731","apa":"Chen, Y. S., Huang, J., Ludwig, A., Reuter, D., Wieck, A. D., & Bacher, G. (2011). Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil. Journal of Applied Physics, 109(1). https://doi.org/10.1063/1.3530731","chicago":"Chen, Y. S., J. Huang, A. Ludwig, Dirk Reuter, A. D. Wieck, and G. Bacher. “Manipulation of Nuclear Spin Dynamics in N-GaAs Using an on-Chip Microcoil.” Journal of Applied Physics 109, no. 1 (2011). https://doi.org/10.1063/1.3530731.","mla":"Chen, Y. S., et al. “Manipulation of Nuclear Spin Dynamics in N-GaAs Using an on-Chip Microcoil.” Journal of Applied Physics, vol. 109, no. 1, 016106, AIP Publishing, 2011, doi:10.1063/1.3530731.","bibtex":"@article{Chen_Huang_Ludwig_Reuter_Wieck_Bacher_2011, title={Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil}, volume={109}, DOI={10.1063/1.3530731}, number={1016106}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Chen, Y. S. and Huang, J. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Bacher, G.}, year={2011} }"},"article_number":"016106","issue":"1","intvolume":" 109","_id":"7719"},{"intvolume":" 110","_id":"4146","article_number":"123512","issue":"12","year":"2011","citation":{"short":"R. Maria Kemper, T. Schupp, M. Häberlen, T. Niendorf, H.-J. Maier, A. Dempewolf, F. Bertram, J. Christen, R. Kirste, A. Hoffmann, J. Lindner, D. As, Journal of Applied Physics 110 (2011).","ieee":"R. Maria Kemper et al., “Anti-phase domains in cubic GaN,” Journal of Applied Physics, vol. 110, no. 12, Art. no. 123512, 2011, doi: 10.1063/1.3666050.","chicago":"Maria Kemper, Ricarda, Thorsten Schupp, Maik Häberlen, Thomas Niendorf, Hans-Jürgen Maier, Anja Dempewolf, Frank Bertram, et al. “Anti-Phase Domains in Cubic GaN.” Journal of Applied Physics 110, no. 12 (2011). https://doi.org/10.1063/1.3666050.","apa":"Maria Kemper, R., Schupp, T., Häberlen, M., Niendorf, T., Maier, H.-J., Dempewolf, A., Bertram, F., Christen, J., Kirste, R., Hoffmann, A., Lindner, J., & As, D. (2011). Anti-phase domains in cubic GaN. Journal of Applied Physics, 110(12), Article 123512. https://doi.org/10.1063/1.3666050","ama":"Maria Kemper R, Schupp T, Häberlen M, et al. Anti-phase domains in cubic GaN. Journal of Applied Physics. 2011;110(12). doi:10.1063/1.3666050","mla":"Maria Kemper, Ricarda, et al. “Anti-Phase Domains in Cubic GaN.” Journal of Applied Physics, vol. 110, no. 12, 123512, AIP Publishing, 2011, doi:10.1063/1.3666050.","bibtex":"@article{Maria Kemper_Schupp_Häberlen_Niendorf_Maier_Dempewolf_Bertram_Christen_Kirste_Hoffmann_et al._2011, title={Anti-phase domains in cubic GaN}, volume={110}, DOI={10.1063/1.3666050}, number={12123512}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Maria Kemper, Ricarda and Schupp, Thorsten and Häberlen, Maik and Niendorf, Thomas and Maier, Hans-Jürgen and Dempewolf, Anja and Bertram, Frank and Christen, Jürgen and Kirste, Ronny and Hoffmann, Axel and et al.}, year={2011} }"},"type":"journal_article","abstract":[{"lang":"eng","text":"The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {111} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, μ-Raman and cathodoluminescence spectroscopy."}],"article_type":"original","ddc":["530"],"user_id":"14931","file_date_updated":"2018-08-27T12:42:38Z","publication":"Journal of Applied Physics","author":[{"last_name":"Maria Kemper","first_name":"Ricarda","full_name":"Maria Kemper, Ricarda"},{"first_name":"Thorsten","full_name":"Schupp, Thorsten","last_name":"Schupp"},{"first_name":"Maik","full_name":"Häberlen, Maik","last_name":"Häberlen"},{"last_name":"Niendorf","first_name":"Thomas","full_name":"Niendorf, Thomas"},{"last_name":"Maier","full_name":"Maier, Hans-Jürgen","first_name":"Hans-Jürgen"},{"last_name":"Dempewolf","full_name":"Dempewolf, Anja","first_name":"Anja"},{"last_name":"Bertram","full_name":"Bertram, Frank","first_name":"Frank"},{"last_name":"Christen","full_name":"Christen, Jürgen","first_name":"Jürgen"},{"full_name":"Kirste, Ronny","first_name":"Ronny","last_name":"Kirste"},{"first_name":"Axel","full_name":"Hoffmann, Axel","last_name":"Hoffmann"},{"first_name":"Jörg","full_name":"Lindner, Jörg","last_name":"Lindner","id":"20797"},{"id":"14","last_name":"As","orcid":"0000-0003-1121-3565","full_name":"As, Donat","first_name":"Donat"}],"publisher":"AIP Publishing","file":[{"date_updated":"2018-08-27T12:42:38Z","content_type":"application/pdf","relation":"main_file","success":1,"file_size":3305430,"file_id":"4147","creator":"hclaudia","access_level":"closed","date_created":"2018-08-27T12:42:38Z","file_name":"Anti-phase domains in cubic GaN.pdf"}],"volume":110,"date_created":"2018-08-27T12:40:30Z","status":"public","has_accepted_license":"1","date_updated":"2023-10-09T09:10:50Z","doi":"10.1063/1.3666050","language":[{"iso":"eng"}],"title":"Anti-phase domains in cubic GaN","department":[{"_id":"15"},{"_id":"286"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published"},{"article_number":"063902","issue":"6","_id":"7985","intvolume":" 108","year":"2010","type":"journal_article","citation":{"ieee":"E. Schuster et al., “Epitaxial growth and interfacial magnetism of spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype system,” Journal of Applied Physics, vol. 108, no. 6, 2010.","short":"E. Schuster, R.A. Brand, F. Stromberg, A. Ludwig, D. Reuter, A.D. Wieck, S. Hövel, N.C. Gerhardt, M.R. Hofmann, H. Wende, W. Keune, Journal of Applied Physics 108 (2010).","bibtex":"@article{Schuster_Brand_Stromberg_Ludwig_Reuter_Wieck_Hövel_Gerhardt_Hofmann_Wende_et al._2010, title={Epitaxial growth and interfacial magnetism of spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype system}, volume={108}, DOI={10.1063/1.3476265}, number={6063902}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Schuster, E. and Brand, R. A. and Stromberg, F. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Wende, H. and et al.}, year={2010} }","mla":"Schuster, E., et al. “Epitaxial Growth and Interfacial Magnetism of Spin Aligner for Remanent Spin Injection: [Fe/Tb]n/Fe/MgO/GaAs-Light Emitting Diode as a Prototype System.” Journal of Applied Physics, vol. 108, no. 6, 063902, AIP Publishing, 2010, doi:10.1063/1.3476265.","chicago":"Schuster, E., R. A. Brand, F. Stromberg, A. Ludwig, Dirk Reuter, A. D. Wieck, S. Hövel, et al. “Epitaxial Growth and Interfacial Magnetism of Spin Aligner for Remanent Spin Injection: [Fe/Tb]n/Fe/MgO/GaAs-Light Emitting Diode as a Prototype System.” Journal of Applied Physics 108, no. 6 (2010). https://doi.org/10.1063/1.3476265.","apa":"Schuster, E., Brand, R. A., Stromberg, F., Ludwig, A., Reuter, D., Wieck, A. D., … Keune, W. (2010). Epitaxial growth and interfacial magnetism of spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype system. Journal of Applied Physics, 108(6). https://doi.org/10.1063/1.3476265","ama":"Schuster E, Brand RA, Stromberg F, et al. Epitaxial growth and interfacial magnetism of spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype system. Journal of Applied Physics. 2010;108(6). doi:10.1063/1.3476265"},"user_id":"42514","volume":108,"date_created":"2019-02-21T14:37:35Z","status":"public","publication":"Journal of Applied Physics","author":[{"full_name":"Schuster, E.","first_name":"E.","last_name":"Schuster"},{"last_name":"Brand","first_name":"R. A.","full_name":"Brand, R. A."},{"last_name":"Stromberg","first_name":"F.","full_name":"Stromberg, F."},{"last_name":"Ludwig","first_name":"A.","full_name":"Ludwig, A."},{"id":"37763","last_name":"Reuter","full_name":"Reuter, Dirk","first_name":"Dirk"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."},{"last_name":"Hövel","full_name":"Hövel, S.","first_name":"S."},{"last_name":"Gerhardt","full_name":"Gerhardt, N. C.","first_name":"N. C."},{"last_name":"Hofmann","first_name":"M. R.","full_name":"Hofmann, M. R."},{"full_name":"Wende, H.","first_name":"H.","last_name":"Wende"},{"last_name":"Keune","full_name":"Keune, W.","first_name":"W."}],"publisher":"AIP Publishing","doi":"10.1063/1.3476265","date_updated":"2022-01-06T07:03:48Z","language":[{"iso":"eng"}],"title":"Epitaxial growth and interfacial magnetism of spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype system","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","department":[{"_id":"15"},{"_id":"230"}]},{"user_id":"55706","ddc":["530"],"abstract":[{"text":"Unintentional doping in nonpolar a-plane \u0001112¯0\u0002 gallium nitride \u0001GaN\u0002 grown on r-plane \u000111¯02\u0002\r\nsapphire using a three-dimensional \u00013D\u0002–two-dimensional \u00012D\u0002 growth method has been\r\ncharacterized. For both 2D only and 3D–2D growth, the presence of an unintentionally doped region\r\nadjacent to the GaN/sapphire interface is observed by scanning capacitance microscopy \u0001SCM\u0002. The\r\naverage width of this unintentionally doped layer is found to increase with increasing 3D growth\r\ntime. By using an intentionally doped GaN:Si staircase structure for calibration, it is shown that the\r\nunintentionally doped region has an average carrier concentration of \u00012.5\u00010.3\u0002\u00021018 cm−3. SCM\r\nalso reveals the presence of unintentionally doped features extending at 60° from the GaN/sapphire\r\ninterface. The observation of decreasing carrier concentration with distance from the GaN/sapphire\r\ninterface along these features may suggest that the unintentional doping arises from oxygen\r\ndiffusion from the sapphire substrate. Low temperature cathodoluminescence spectra reveal\r\nemission peaks at 3.41 and 3.30 eV, which are believed to originate from basal plane stacking faults\r\n\u0001BSFs\u0002 and prismatic stacking faults \u0001PSFs\u0002, respectively. It is shown that the inclined features\r\nextending from the GaN/sapphire interface exhibit both enhanced BSF and PSF emission. We\r\nsuggest that enhanced unintentional doping occurs in regions around PSFs. Where BSFs intersect\r\nthis doped material their emission is also enhanced due to reduced nonradiative recombination.\r\nTransmission electron microscopy confirms the presence of PSFs extending through the film at 60°\r\nfrom the GaN/sapphire interface.","lang":"eng"}],"article_type":"original","extern":"1","date_created":"2018-08-28T12:27:34Z","has_accepted_license":"1","status":"public","volume":107,"file":[{"content_type":"application/pdf","date_updated":"2018-08-28T12:28:22Z","relation":"main_file","success":1,"file_size":688753,"file_id":"4203","creator":"hclaudia","access_level":"closed","file_name":"Characterization of unintentional doping in nonpolar GaN.pdf","date_created":"2018-08-28T12:28:22Z"}],"publication":"Journal of Applied Physics","file_date_updated":"2018-08-28T12:28:22Z","author":[{"first_name":"Tongtong","full_name":"Zhu, Tongtong","last_name":"Zhu"},{"last_name":"Johnston","first_name":"Carol F.","full_name":"Johnston, Carol F."},{"full_name":"Häberlen, Maik","first_name":"Maik","last_name":"Häberlen"},{"last_name":"Kappers","full_name":"Kappers, Menno J.","first_name":"Menno J."},{"last_name":"Oliver","full_name":"Oliver, Rachel A.","first_name":"Rachel A."}],"publisher":"AIP Publishing","issue":"2","article_number":"023503","intvolume":" 107","_id":"4202","year":"2010","citation":{"short":"T. Zhu, C.F. Johnston, M. Häberlen, M.J. Kappers, R.A. Oliver, Journal of Applied Physics 107 (2010).","ieee":"T. Zhu, C. F. Johnston, M. Häberlen, M. J. Kappers, and R. A. Oliver, “Characterization of unintentional doping in nonpolar GaN,” Journal of Applied Physics, vol. 107, no. 2, 2010.","chicago":"Zhu, Tongtong, Carol F. Johnston, Maik Häberlen, Menno J. Kappers, and Rachel A. Oliver. “Characterization of Unintentional Doping in Nonpolar GaN.” Journal of Applied Physics 107, no. 2 (2010). https://doi.org/10.1063/1.3284944.","ama":"Zhu T, Johnston CF, Häberlen M, Kappers MJ, Oliver RA. Characterization of unintentional doping in nonpolar GaN. Journal of Applied Physics. 2010;107(2). doi:10.1063/1.3284944","apa":"Zhu, T., Johnston, C. F., Häberlen, M., Kappers, M. J., & Oliver, R. A. (2010). Characterization of unintentional doping in nonpolar GaN. Journal of Applied Physics, 107(2). https://doi.org/10.1063/1.3284944","mla":"Zhu, Tongtong, et al. “Characterization of Unintentional Doping in Nonpolar GaN.” Journal of Applied Physics, vol. 107, no. 2, 023503, AIP Publishing, 2010, doi:10.1063/1.3284944.","bibtex":"@article{Zhu_Johnston_Häberlen_Kappers_Oliver_2010, title={Characterization of unintentional doping in nonpolar GaN}, volume={107}, DOI={10.1063/1.3284944}, number={2023503}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zhu, Tongtong and Johnston, Carol F. and Häberlen, Maik and Kappers, Menno J. and Oliver, Rachel A.}, year={2010} }"},"type":"journal_article","title":"Characterization of unintentional doping in nonpolar GaN","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","department":[{"_id":"15"}],"doi":"10.1063/1.3284944","date_updated":"2022-01-06T07:00:34Z","language":[{"iso":"eng"}]},{"type":"journal_article","year":"2010","citation":{"short":"M. Häberlen, T.J. Badcock, M.A. Moram, J.L. Hollander, M.J. Kappers, P. Dawson, C.J. Humphreys, R.A. Oliver, Journal of Applied Physics 108 (2010).","ieee":"M. Häberlen et al., “Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth,” Journal of Applied Physics, vol. 108, no. 3, 2010.","chicago":"Häberlen, M., T. J. Badcock, M. A. Moram, J. L. Hollander, M. J. Kappers, P. Dawson, C. J. Humphreys, and R. A. Oliver. “Low Temperature Photoluminescence and Cathodoluminescence Studies of Nonpolar GaN Grown Using Epitaxial Lateral Overgrowth.” Journal of Applied Physics 108, no. 3 (2010). https://doi.org/10.1063/1.3460641.","ama":"Häberlen M, Badcock TJ, Moram MA, et al. Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. Journal of Applied Physics. 2010;108(3). doi:10.1063/1.3460641","apa":"Häberlen, M., Badcock, T. J., Moram, M. A., Hollander, J. L., Kappers, M. J., Dawson, P., … Oliver, R. A. (2010). Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. Journal of Applied Physics, 108(3). https://doi.org/10.1063/1.3460641","bibtex":"@article{Häberlen_Badcock_Moram_Hollander_Kappers_Dawson_Humphreys_Oliver_2010, title={Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth}, volume={108}, DOI={10.1063/1.3460641}, number={3033523}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Häberlen, M. and Badcock, T. J. and Moram, M. A. and Hollander, J. L. and Kappers, M. J. and Dawson, P. and Humphreys, C. J. and Oliver, R. A.}, year={2010} }","mla":"Häberlen, M., et al. “Low Temperature Photoluminescence and Cathodoluminescence Studies of Nonpolar GaN Grown Using Epitaxial Lateral Overgrowth.” Journal of Applied Physics, vol. 108, no. 3, 033523, AIP Publishing, 2010, doi:10.1063/1.3460641."},"_id":"4212","intvolume":" 108","article_number":"033523","issue":"3","publication":"Journal of Applied Physics","file_date_updated":"2018-08-28T12:47:23Z","publisher":"AIP Publishing","author":[{"last_name":"Häberlen","full_name":"Häberlen, M.","first_name":"M."},{"first_name":"T. J.","full_name":"Badcock, T. J.","last_name":"Badcock"},{"last_name":"Moram","full_name":"Moram, M. A.","first_name":"M. A."},{"full_name":"Hollander, J. L.","first_name":"J. L.","last_name":"Hollander"},{"last_name":"Kappers","full_name":"Kappers, M. J.","first_name":"M. J."},{"last_name":"Dawson","first_name":"P.","full_name":"Dawson, P."},{"first_name":"C. J.","full_name":"Humphreys, C. J.","last_name":"Humphreys"},{"full_name":"Oliver, R. A.","first_name":"R. A.","last_name":"Oliver"}],"file":[{"file_size":2391054,"file_id":"4213","creator":"hclaudia","content_type":"application/pdf","date_updated":"2018-08-28T12:47:23Z","relation":"main_file","success":1,"date_created":"2018-08-28T12:47:23Z","file_name":"Low temperature photoluminescence and cathodoluminescence studies of non-polar GaN grown using epitaxial lateral overgrowth.pdf","access_level":"closed"}],"volume":108,"date_created":"2018-08-28T12:46:49Z","has_accepted_license":"1","status":"public","abstract":[{"lang":"eng","text":"Low temperature cathodo- and photoluminescence has been performed on nonpolar a-plane GaN films grown using epitaxial lateral overgrowth. In films overgrown at a low V–III ratio, the emission spectrum is dominated by “yellow” and “blue” luminescence bands, attributed to recombination at point defects or impurities. The intensity of this emission is observed to decrease steadily across the window region along the −c direction, possibly due to asymmetric diffusion of a point defect/impurity species. When overgrown at a higher V–III ratio, the near band edge and basal-plane stacking fault emission intensity increases by orders of magnitude and a donor–acceptor pair band is observed. Using monochromatic cathodoluminescence imaging, the various emission features are correlated with the microstructure of the film. In particular, the peak energy of the basal-plane stacking fault emission is seen to be blueshifted by \u000415 meV in the wing relative to the window region, which may be related to the different strain states in the respective regions."}],"article_type":"original","ddc":["530"],"user_id":"55706","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:00:37Z","doi":"10.1063/1.3460641","department":[{"_id":"15"}],"publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"title":"Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth"},{"user_id":"254","date_created":"2023-01-24T18:51:19Z","status":"public","volume":105,"publication":"Journal of Applied Physics","keyword":["General Physics and Astronomy"],"publisher":"AIP Publishing","author":[{"last_name":"Hoischen","first_name":"A.","full_name":"Hoischen, A."},{"last_name":"Benning","full_name":"Benning, S. A.","first_name":"S. A."},{"full_name":"Kitzerow, Heinz-Siegfried","first_name":"Heinz-Siegfried","id":"254","last_name":"Kitzerow"}],"issue":"1","article_number":"013540","intvolume":" 105","_id":"39747","year":"2009","citation":{"ama":"Hoischen A, Benning SA, Kitzerow H-S. Electroconvection of liquid crystals: Tool for fabricating modulated polymer surfaces. Journal of Applied Physics. 2009;105(1). doi:10.1063/1.3055398","apa":"Hoischen, A., Benning, S. A., & Kitzerow, H.-S. (2009). Electroconvection of liquid crystals: Tool for fabricating modulated polymer surfaces. Journal of Applied Physics, 105(1), Article 013540. https://doi.org/10.1063/1.3055398","chicago":"Hoischen, A., S. A. Benning, and Heinz-Siegfried Kitzerow. “Electroconvection of Liquid Crystals: Tool for Fabricating Modulated Polymer Surfaces.” Journal of Applied Physics 105, no. 1 (2009). https://doi.org/10.1063/1.3055398.","bibtex":"@article{Hoischen_Benning_Kitzerow_2009, title={Electroconvection of liquid crystals: Tool for fabricating modulated polymer surfaces}, volume={105}, DOI={10.1063/1.3055398}, number={1013540}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Hoischen, A. and Benning, S. A. and Kitzerow, Heinz-Siegfried}, year={2009} }","mla":"Hoischen, A., et al. “Electroconvection of Liquid Crystals: Tool for Fabricating Modulated Polymer Surfaces.” Journal of Applied Physics, vol. 105, no. 1, 013540, AIP Publishing, 2009, doi:10.1063/1.3055398.","short":"A. Hoischen, S.A. Benning, H.-S. Kitzerow, Journal of Applied Physics 105 (2009).","ieee":"A. Hoischen, S. A. Benning, and H.-S. Kitzerow, “Electroconvection of liquid crystals: Tool for fabricating modulated polymer surfaces,” Journal of Applied Physics, vol. 105, no. 1, Art. no. 013540, 2009, doi: 10.1063/1.3055398."},"type":"journal_article","title":"Electroconvection of liquid crystals: Tool for fabricating modulated polymer surfaces","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"department":[{"_id":"313"},{"_id":"638"}],"doi":"10.1063/1.3055398","date_updated":"2023-01-24T18:51:47Z","language":[{"iso":"eng"}]},{"intvolume":" 101","_id":"7643","article_number":"103112","issue":"10","year":"2007","type":"journal_article","citation":{"ieee":"C. Meier, A. Gondorf, S. Lüttjohann, A. Lorke, and H. Wiggers, “Silicon nanoparticles: Absorption, emission, and the nature of the electronic bandgap,” Journal of Applied Physics, vol. 101, no. 10, 2007.","short":"C. Meier, A. Gondorf, S. Lüttjohann, A. Lorke, H. Wiggers, Journal of Applied Physics 101 (2007).","mla":"Meier, Cedrik, et al. “Silicon Nanoparticles: Absorption, Emission, and the Nature of the Electronic Bandgap.” Journal of Applied Physics, vol. 101, no. 10, 103112, AIP Publishing, 2007, doi:10.1063/1.2720095.","bibtex":"@article{Meier_Gondorf_Lüttjohann_Lorke_Wiggers_2007, title={Silicon nanoparticles: Absorption, emission, and the nature of the electronic bandgap}, volume={101}, DOI={10.1063/1.2720095}, number={10103112}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Meier, Cedrik and Gondorf, Andreas and Lüttjohann, Stephan and Lorke, Axel and Wiggers, Hartmut}, year={2007} }","chicago":"Meier, Cedrik, Andreas Gondorf, Stephan Lüttjohann, Axel Lorke, and Hartmut Wiggers. “Silicon Nanoparticles: Absorption, Emission, and the Nature of the Electronic Bandgap.” Journal of Applied Physics 101, no. 10 (2007). https://doi.org/10.1063/1.2720095.","apa":"Meier, C., Gondorf, A., Lüttjohann, S., Lorke, A., & Wiggers, H. (2007). Silicon nanoparticles: Absorption, emission, and the nature of the electronic bandgap. Journal of Applied Physics, 101(10). https://doi.org/10.1063/1.2720095","ama":"Meier C, Gondorf A, Lüttjohann S, Lorke A, Wiggers H. Silicon nanoparticles: Absorption, emission, and the nature of the electronic bandgap. Journal of Applied Physics. 2007;101(10). doi:10.1063/1.2720095"},"extern":"1","user_id":"20798","author":[{"last_name":"Meier","id":"20798","first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik"},{"last_name":"Gondorf","full_name":"Gondorf, Andreas","first_name":"Andreas"},{"last_name":"Lüttjohann","first_name":"Stephan","full_name":"Lüttjohann, Stephan"},{"full_name":"Lorke, Axel","first_name":"Axel","last_name":"Lorke"},{"first_name":"Hartmut","full_name":"Wiggers, Hartmut","last_name":"Wiggers"}],"publisher":"AIP Publishing","publication":"Journal of Applied Physics","volume":101,"status":"public","date_created":"2019-02-13T11:33:50Z","date_updated":"2022-01-06T07:03:43Z","doi":"10.1063/1.2720095","language":[{"iso":"eng"}],"title":"Silicon nanoparticles: Absorption, emission, and the nature of the electronic bandgap","department":[{"_id":"15"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published"},{"doi":"10.1063/1.2203408","date_updated":"2022-01-06T07:03:43Z","language":[{"iso":"eng"}],"title":"Vibrational and defect states in SnOx nanoparticles","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","department":[{"_id":"15"}],"article_number":"113108","issue":"11","intvolume":" 99","_id":"7648","type":"journal_article","citation":{"ieee":"C. Meier et al., “Vibrational and defect states in SnOx nanoparticles,” Journal of Applied Physics, vol. 99, no. 11, 2006.","short":"C. Meier, S. Lüttjohann, V.G. Kravets, H. Nienhaus, A. Lorke, P. Ifeacho, H. Wiggers, C. Schulz, M.K. Kennedy, F.E. Kruis, Journal of Applied Physics 99 (2006).","mla":"Meier, Cedrik, et al. “Vibrational and Defect States in SnOx Nanoparticles.” Journal of Applied Physics, vol. 99, no. 11, 113108, AIP Publishing, 2006, doi:10.1063/1.2203408.","bibtex":"@article{Meier_Lüttjohann_Kravets_Nienhaus_Lorke_Ifeacho_Wiggers_Schulz_Kennedy_Kruis_2006, title={Vibrational and defect states in SnOx nanoparticles}, volume={99}, DOI={10.1063/1.2203408}, number={11113108}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Meier, Cedrik and Lüttjohann, Stephan and Kravets, Vasyl G. and Nienhaus, Hermann and Lorke, Axel and Ifeacho, Pascal and Wiggers, Hartmut and Schulz, Christof and Kennedy, Marcus K. and Kruis, F. Einar}, year={2006} }","chicago":"Meier, Cedrik, Stephan Lüttjohann, Vasyl G. Kravets, Hermann Nienhaus, Axel Lorke, Pascal Ifeacho, Hartmut Wiggers, Christof Schulz, Marcus K. Kennedy, and F. Einar Kruis. “Vibrational and Defect States in SnOx Nanoparticles.” Journal of Applied Physics 99, no. 11 (2006). https://doi.org/10.1063/1.2203408.","ama":"Meier C, Lüttjohann S, Kravets VG, et al. Vibrational and defect states in SnOx nanoparticles. Journal of Applied Physics. 2006;99(11). doi:10.1063/1.2203408","apa":"Meier, C., Lüttjohann, S., Kravets, V. G., Nienhaus, H., Lorke, A., Ifeacho, P., … Kruis, F. E. (2006). Vibrational and defect states in SnOx nanoparticles. Journal of Applied Physics, 99(11). https://doi.org/10.1063/1.2203408"},"year":"2006","user_id":"20798","extern":"1","volume":99,"status":"public","date_created":"2019-02-13T11:38:17Z","publisher":"AIP Publishing","author":[{"last_name":"Meier","id":"20798","first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik"},{"last_name":"Lüttjohann","full_name":"Lüttjohann, Stephan","first_name":"Stephan"},{"last_name":"Kravets","full_name":"Kravets, Vasyl G.","first_name":"Vasyl G."},{"last_name":"Nienhaus","full_name":"Nienhaus, Hermann","first_name":"Hermann"},{"last_name":"Lorke","first_name":"Axel","full_name":"Lorke, Axel"},{"last_name":"Ifeacho","full_name":"Ifeacho, Pascal","first_name":"Pascal"},{"first_name":"Hartmut","full_name":"Wiggers, Hartmut","last_name":"Wiggers"},{"full_name":"Schulz, Christof","first_name":"Christof","last_name":"Schulz"},{"last_name":"Kennedy","full_name":"Kennedy, Marcus K.","first_name":"Marcus K."},{"full_name":"Kruis, F. Einar","first_name":"F. Einar","last_name":"Kruis"}],"publication":"Journal of Applied Physics"},{"article_number":"073907","doi":"10.1063/1.2186376","date_updated":"2022-01-06T07:03:58Z","_id":"8651","language":[{"iso":"eng"}],"year":"2006","citation":{"ieee":"N. C. Gerhardt et al., “Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts,” Journal of Applied Physics, 2006.","short":"N.C. Gerhardt, S. Hövel, C. Brenner, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D. Wieck, E. Schuster, W. Keune, S. Halm, G. Bacher, K. Westerholt, Journal of Applied Physics (2006).","bibtex":"@article{Gerhardt_Hövel_Brenner_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Halm_et al._2006, title={Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts}, DOI={10.1063/1.2186376}, number={073907}, journal={Journal of Applied Physics}, author={Gerhardt, N. C. and Hövel, S. and Brenner, C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Keune, W. and Halm, S. and et al.}, year={2006} }","mla":"Gerhardt, N. C., et al. “Spin Injection Light-Emitting Diode with Vertically Magnetized Ferromagnetic Metal Contacts.” Journal of Applied Physics, 073907, 2006, doi:10.1063/1.2186376.","chicago":"Gerhardt, N. C., S. Hövel, C. Brenner, M. R. Hofmann, F.-Y. Lo, Dirk Reuter, A. D. Wieck, et al. “Spin Injection Light-Emitting Diode with Vertically Magnetized Ferromagnetic Metal Contacts.” Journal of Applied Physics, 2006. https://doi.org/10.1063/1.2186376.","ama":"Gerhardt NC, Hövel S, Brenner C, et al. Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts. Journal of Applied Physics. 2006. doi:10.1063/1.2186376","apa":"Gerhardt, N. C., Hövel, S., Brenner, C., Hofmann, M. R., Lo, F.-Y., Reuter, D., … Westerholt, K. (2006). Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts. Journal of Applied Physics. https://doi.org/10.1063/1.2186376"},"type":"journal_article","user_id":"42514","title":"Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts","status":"public","date_created":"2019-03-27T07:57:04Z","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","author":[{"last_name":"Gerhardt","first_name":"N. C.","full_name":"Gerhardt, N. C."},{"first_name":"S.","full_name":"Hövel, S.","last_name":"Hövel"},{"last_name":"Brenner","full_name":"Brenner, C.","first_name":"C."},{"full_name":"Hofmann, M. R.","first_name":"M. R.","last_name":"Hofmann"},{"last_name":"Lo","full_name":"Lo, F.-Y.","first_name":"F.-Y."},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"},{"full_name":"Schuster, E.","first_name":"E.","last_name":"Schuster"},{"last_name":"Keune","full_name":"Keune, W.","first_name":"W."},{"full_name":"Halm, S.","first_name":"S.","last_name":"Halm"},{"full_name":"Bacher, G.","first_name":"G.","last_name":"Bacher"},{"last_name":"Westerholt","full_name":"Westerholt, K.","first_name":"K."}],"publication":"Journal of Applied Physics","department":[{"_id":"15"},{"_id":"230"}]},{"author":[{"full_name":"Höink, V.","first_name":"V.","last_name":"Höink"},{"full_name":"Sacher, Marc","first_name":"Marc","id":"26883","last_name":"Sacher"},{"last_name":"Schmalhorst","full_name":"Schmalhorst, J.","first_name":"J."},{"last_name":"Reiss","full_name":"Reiss, G.","first_name":"G."},{"first_name":"D.","full_name":"Engel, D.","last_name":"Engel"},{"first_name":"T.","full_name":"Weis, T.","last_name":"Weis"},{"first_name":"A.","full_name":"Ehresmann, A.","last_name":"Ehresmann"}],"publisher":"AIP Publishing","publication":"Journal of Applied Physics","keyword":["General Physics and Astronomy"],"volume":100,"status":"public","date_created":"2022-01-31T10:15:57Z","extern":"1","user_id":"26883","year":"2006","type":"journal_article","citation":{"chicago":"Höink, V., Marc Sacher, J. Schmalhorst, G. Reiss, D. Engel, T. Weis, and A. Ehresmann. “Switchable Resonant X-Ray Bragg Scattering on a Magnetic Grating Patterned by Ion Bombardment.” Journal of Applied Physics 100, no. 6 (2006). https://doi.org/10.1063/1.2349568.","ama":"Höink V, Sacher M, Schmalhorst J, et al. Switchable resonant x-ray Bragg scattering on a magnetic grating patterned by ion bombardment. Journal of Applied Physics. 2006;100(6). doi:10.1063/1.2349568","apa":"Höink, V., Sacher, M., Schmalhorst, J., Reiss, G., Engel, D., Weis, T., & Ehresmann, A. (2006). Switchable resonant x-ray Bragg scattering on a magnetic grating patterned by ion bombardment. Journal of Applied Physics, 100(6), Article 063903. https://doi.org/10.1063/1.2349568","mla":"Höink, V., et al. “Switchable Resonant X-Ray Bragg Scattering on a Magnetic Grating Patterned by Ion Bombardment.” Journal of Applied Physics, vol. 100, no. 6, 063903, AIP Publishing, 2006, doi:10.1063/1.2349568.","bibtex":"@article{Höink_Sacher_Schmalhorst_Reiss_Engel_Weis_Ehresmann_2006, title={Switchable resonant x-ray Bragg scattering on a magnetic grating patterned by ion bombardment}, volume={100}, DOI={10.1063/1.2349568}, number={6063903}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Höink, V. and Sacher, Marc and Schmalhorst, J. and Reiss, G. and Engel, D. and Weis, T. and Ehresmann, A.}, year={2006} }","short":"V. Höink, M. Sacher, J. Schmalhorst, G. Reiss, D. Engel, T. Weis, A. Ehresmann, Journal of Applied Physics 100 (2006).","ieee":"V. Höink et al., “Switchable resonant x-ray Bragg scattering on a magnetic grating patterned by ion bombardment,” Journal of Applied Physics, vol. 100, no. 6, Art. no. 063903, 2006, doi: 10.1063/1.2349568."},"_id":"29683","intvolume":" 100","article_number":"063903","issue":"6","department":[{"_id":"15"},{"_id":"576"}],"publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"title":"Switchable resonant x-ray Bragg scattering on a magnetic grating patterned by ion bombardment","language":[{"iso":"eng"}],"date_updated":"2022-01-31T10:16:18Z","doi":"10.1063/1.2349568"},{"date_updated":"2022-01-31T10:15:05Z","doi":"10.1063/1.2384806","language":[{"iso":"eng"}],"title":"Magnetic and chemical properties of Co[sub 2]MnSi thin films compared to the Co[sub 2]MnSi∕Al-O interface","department":[{"_id":"15"},{"_id":"576"}],"publication_status":"published","publication_identifier":{"issn":["0021-8979"]},"_id":"29681","intvolume":" 100","issue":"11","article_number":"113903","year":"2006","type":"journal_article","citation":{"ieee":"J. Schmalhorst et al., “Magnetic and chemical properties of Co[sub 2]MnSi thin films compared to the Co[sub 2]MnSi∕Al-O interface,” Journal of Applied Physics, vol. 100, no. 11, Art. no. 113903, 2006, doi: 10.1063/1.2384806.","short":"J. Schmalhorst, M. Sacher, V. Höink, G. Reiss, A. Hütten, D. Engel, A. Ehresmann, Journal of Applied Physics 100 (2006).","mla":"Schmalhorst, J., et al. “Magnetic and Chemical Properties of Co[Sub 2]MnSi Thin Films Compared to the Co[Sub 2]MnSi∕Al-O Interface.” Journal of Applied Physics, vol. 100, no. 11, 113903, AIP Publishing, 2006, doi:10.1063/1.2384806.","bibtex":"@article{Schmalhorst_Sacher_Höink_Reiss_Hütten_Engel_Ehresmann_2006, title={Magnetic and chemical properties of Co[sub 2]MnSi thin films compared to the Co[sub 2]MnSi∕Al-O interface}, volume={100}, DOI={10.1063/1.2384806}, number={11113903}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Schmalhorst, J. and Sacher, Marc and Höink, V. and Reiss, G. and Hütten, A. and Engel, D. and Ehresmann, A.}, year={2006} }","chicago":"Schmalhorst, J., Marc Sacher, V. Höink, G. Reiss, A. Hütten, D. Engel, and A. Ehresmann. “Magnetic and Chemical Properties of Co[Sub 2]MnSi Thin Films Compared to the Co[Sub 2]MnSi∕Al-O Interface.” Journal of Applied Physics 100, no. 11 (2006). https://doi.org/10.1063/1.2384806.","apa":"Schmalhorst, J., Sacher, M., Höink, V., Reiss, G., Hütten, A., Engel, D., & Ehresmann, A. (2006). Magnetic and chemical properties of Co[sub 2]MnSi thin films compared to the Co[sub 2]MnSi∕Al-O interface. Journal of Applied Physics, 100(11), Article 113903. https://doi.org/10.1063/1.2384806","ama":"Schmalhorst J, Sacher M, Höink V, et al. Magnetic and chemical properties of Co[sub 2]MnSi thin films compared to the Co[sub 2]MnSi∕Al-O interface. Journal of Applied Physics. 2006;100(11). doi:10.1063/1.2384806"},"extern":"1","user_id":"26883","author":[{"last_name":"Schmalhorst","full_name":"Schmalhorst, J.","first_name":"J."},{"id":"26883","last_name":"Sacher","full_name":"Sacher, Marc","first_name":"Marc"},{"last_name":"Höink","first_name":"V.","full_name":"Höink, V."},{"full_name":"Reiss, G.","first_name":"G.","last_name":"Reiss"},{"first_name":"A.","full_name":"Hütten, A.","last_name":"Hütten"},{"last_name":"Engel","full_name":"Engel, D.","first_name":"D."},{"last_name":"Ehresmann","first_name":"A.","full_name":"Ehresmann, A."}],"publisher":"AIP Publishing","publication":"Journal of Applied Physics","keyword":["General Physics and Astronomy"],"status":"public","date_created":"2022-01-31T10:14:42Z","volume":100},{"year":"2006","type":"journal_article","citation":{"short":"L. Paelke, H.-S. Kitzerow, Journal of Applied Physics 100 (2006).","ieee":"L. Paelke and H.-S. Kitzerow, “Space charge field and dynamics of the grating formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane,” Journal of Applied Physics, vol. 100, no. 11, Art. no. 113101, 2006, doi: 10.1063/1.2372434.","ama":"Paelke L, Kitzerow H-S. Space charge field and dynamics of the grating formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane. Journal of Applied Physics. 2006;100(11). doi:10.1063/1.2372434","apa":"Paelke, L., & Kitzerow, H.-S. (2006). Space charge field and dynamics of the grating formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane. Journal of Applied Physics, 100(11), Article 113101. https://doi.org/10.1063/1.2372434","chicago":"Paelke, Lutz, and Heinz-Siegfried Kitzerow. “Space Charge Field and Dynamics of the Grating Formation in a Photorefractive Polymer-Dispersed Liquid Crystal Based on a Photoconducting Polysiloxane.” Journal of Applied Physics 100, no. 11 (2006). https://doi.org/10.1063/1.2372434.","bibtex":"@article{Paelke_Kitzerow_2006, title={Space charge field and dynamics of the grating formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane}, volume={100}, DOI={10.1063/1.2372434}, number={11113101}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Paelke, Lutz and Kitzerow, Heinz-Siegfried}, year={2006} }","mla":"Paelke, Lutz, and Heinz-Siegfried Kitzerow. “Space Charge Field and Dynamics of the Grating Formation in a Photorefractive Polymer-Dispersed Liquid Crystal Based on a Photoconducting Polysiloxane.” Journal of Applied Physics, vol. 100, no. 11, 113101, AIP Publishing, 2006, doi:10.1063/1.2372434."},"intvolume":" 100","_id":"39761","article_number":"113101","issue":"11","publisher":"AIP Publishing","author":[{"full_name":"Paelke, Lutz","first_name":"Lutz","last_name":"Paelke"},{"id":"254","last_name":"Kitzerow","full_name":"Kitzerow, Heinz-Siegfried","first_name":"Heinz-Siegfried"}],"publication":"Journal of Applied Physics","keyword":["General Physics and Astronomy"],"volume":100,"status":"public","date_created":"2023-01-24T19:08:50Z","user_id":"254","language":[{"iso":"eng"}],"date_updated":"2023-01-24T19:09:08Z","doi":"10.1063/1.2372434","department":[{"_id":"313"},{"_id":"638"}],"publication_status":"published","publication_identifier":{"issn":["0021-8979"]},"title":"Space charge field and dynamics of the grating formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane"},{"article_number":"084306","issue":"8","intvolume":" 97","_id":"7657","citation":{"ieee":"V. G. Kravets, C. Meier, D. Konjhodzic, A. Lorke, and H. Wiggers, “Infrared properties of silicon nanoparticles,” Journal of Applied Physics, vol. 97, no. 8, 2005.","short":"V.G. Kravets, C. Meier, D. Konjhodzic, A. Lorke, H. Wiggers, Journal of Applied Physics 97 (2005).","bibtex":"@article{Kravets_Meier_Konjhodzic_Lorke_Wiggers_2005, title={Infrared properties of silicon nanoparticles}, volume={97}, DOI={10.1063/1.1866475}, number={8084306}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kravets, Vasyl G. and Meier, Cedrik and Konjhodzic, Denan and Lorke, Axel and Wiggers, Hartmut}, year={2005} }","mla":"Kravets, Vasyl G., et al. “Infrared Properties of Silicon Nanoparticles.” Journal of Applied Physics, vol. 97, no. 8, 084306, AIP Publishing, 2005, doi:10.1063/1.1866475.","chicago":"Kravets, Vasyl G., Cedrik Meier, Denan Konjhodzic, Axel Lorke, and Hartmut Wiggers. “Infrared Properties of Silicon Nanoparticles.” Journal of Applied Physics 97, no. 8 (2005). https://doi.org/10.1063/1.1866475.","apa":"Kravets, V. G., Meier, C., Konjhodzic, D., Lorke, A., & Wiggers, H. (2005). Infrared properties of silicon nanoparticles. Journal of Applied Physics, 97(8). https://doi.org/10.1063/1.1866475","ama":"Kravets VG, Meier C, Konjhodzic D, Lorke A, Wiggers H. Infrared properties of silicon nanoparticles. Journal of Applied Physics. 2005;97(8). doi:10.1063/1.1866475"},"type":"journal_article","year":"2005","user_id":"20798","extern":"1","volume":97,"status":"public","date_created":"2019-02-13T11:51:22Z","author":[{"last_name":"Kravets","first_name":"Vasyl G.","full_name":"Kravets, Vasyl G."},{"full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","first_name":"Cedrik","id":"20798","last_name":"Meier"},{"full_name":"Konjhodzic, Denan","first_name":"Denan","last_name":"Konjhodzic"},{"full_name":"Lorke, Axel","first_name":"Axel","last_name":"Lorke"},{"full_name":"Wiggers, Hartmut","first_name":"Hartmut","last_name":"Wiggers"}],"publisher":"AIP Publishing","publication":"Journal of Applied Physics","doi":"10.1063/1.1866475","date_updated":"2022-01-06T07:03:43Z","language":[{"iso":"eng"}],"title":"Infrared properties of silicon nanoparticles","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","department":[{"_id":"15"}]},{"citation":{"short":"J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, K. Starke, Journal of Applied Physics 97 (2005).","ieee":"J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke, “X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions,” Journal of Applied Physics, vol. 97, no. 12, Art. no. 123711, 2005, doi: 10.1063/1.1939086.","apa":"Schmalhorst, J., Sacher, M., Thomas, A., Brückl, H., Reiss, G., & Starke, K. (2005). X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions. Journal of Applied Physics, 97(12), Article 123711. https://doi.org/10.1063/1.1939086","ama":"Schmalhorst J, Sacher M, Thomas A, Brückl H, Reiss G, Starke K. X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions. Journal of Applied Physics. 2005;97(12). doi:10.1063/1.1939086","chicago":"Schmalhorst, J., Marc Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke. “X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic Tunnel Junctions.” Journal of Applied Physics 97, no. 12 (2005). https://doi.org/10.1063/1.1939086.","bibtex":"@article{Schmalhorst_Sacher_Thomas_Brückl_Reiss_Starke_2005, title={X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions}, volume={97}, DOI={10.1063/1.1939086}, number={12123711}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Schmalhorst, J. and Sacher, Marc and Thomas, A. and Brückl, H. and Reiss, G. and Starke, K.}, year={2005} }","mla":"Schmalhorst, J., et al. “X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic Tunnel Junctions.” Journal of Applied Physics, vol. 97, no. 12, 123711, AIP Publishing, 2005, doi:10.1063/1.1939086."},"year":"2005","type":"journal_article","article_number":"123711","issue":"12","_id":"29689","intvolume":" 97","volume":97,"status":"public","date_created":"2022-01-31T10:20:49Z","publisher":"AIP Publishing","author":[{"last_name":"Schmalhorst","full_name":"Schmalhorst, J.","first_name":"J."},{"id":"26883","last_name":"Sacher","full_name":"Sacher, Marc","first_name":"Marc"},{"last_name":"Thomas","first_name":"A.","full_name":"Thomas, A."},{"full_name":"Brückl, H.","first_name":"H.","last_name":"Brückl"},{"last_name":"Reiss","first_name":"G.","full_name":"Reiss, G."},{"last_name":"Starke","full_name":"Starke, K.","first_name":"K."}],"publication":"Journal of Applied Physics","keyword":["General Physics and Astronomy"],"user_id":"26883","extern":"1","language":[{"iso":"eng"}],"doi":"10.1063/1.1939086","date_updated":"2022-01-31T10:21:05Z","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","department":[{"_id":"15"},{"_id":"576"}],"title":"X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions"},{"status":"public","date_created":"2022-01-31T10:19:13Z","volume":97,"author":[{"last_name":"Schmalhorst","first_name":"J.","full_name":"Schmalhorst, J."},{"last_name":"Sacher","id":"26883","first_name":"Marc","full_name":"Sacher, Marc"},{"last_name":"Thomas","first_name":"A.","full_name":"Thomas, A."},{"last_name":"Brückl","first_name":"H.","full_name":"Brückl, H."},{"first_name":"G.","full_name":"Reiss, G.","last_name":"Reiss"},{"last_name":"Starke","full_name":"Starke, K.","first_name":"K."}],"publisher":"AIP Publishing","publication":"Journal of Applied Physics","keyword":["General Physics and Astronomy"],"user_id":"26883","extern":"1","citation":{"chicago":"Schmalhorst, J., Marc Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke. “X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic Tunnel Junctions.” Journal of Applied Physics 97, no. 12 (2005). https://doi.org/10.1063/1.1939086.","ama":"Schmalhorst J, Sacher M, Thomas A, Brückl H, Reiss G, Starke K. X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions. Journal of Applied Physics. 2005;97(12). doi:10.1063/1.1939086","apa":"Schmalhorst, J., Sacher, M., Thomas, A., Brückl, H., Reiss, G., & Starke, K. (2005). X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions. Journal of Applied Physics, 97(12), Article 123711. https://doi.org/10.1063/1.1939086","mla":"Schmalhorst, J., et al. “X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic Tunnel Junctions.” Journal of Applied Physics, vol. 97, no. 12, 123711, AIP Publishing, 2005, doi:10.1063/1.1939086.","bibtex":"@article{Schmalhorst_Sacher_Thomas_Brückl_Reiss_Starke_2005, title={X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions}, volume={97}, DOI={10.1063/1.1939086}, number={12123711}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Schmalhorst, J. and Sacher, Marc and Thomas, A. and Brückl, H. and Reiss, G. and Starke, K.}, year={2005} }","short":"J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, K. Starke, Journal of Applied Physics 97 (2005).","ieee":"J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke, “X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions,” Journal of Applied Physics, vol. 97, no. 12, Art. no. 123711, 2005, doi: 10.1063/1.1939086."},"year":"2005","type":"journal_article","issue":"12","article_number":"123711","intvolume":" 97","_id":"29688","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","department":[{"_id":"15"},{"_id":"576"}],"title":"X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions","language":[{"iso":"eng"}],"doi":"10.1063/1.1939086","date_updated":"2022-01-31T10:19:34Z"},{"extern":"1","user_id":"26883","publication":"Journal of Applied Physics","keyword":["General Physics and Astronomy"],"publisher":"AIP Publishing","author":[{"full_name":"Sacher, Marc","first_name":"Marc","id":"26883","last_name":"Sacher"},{"full_name":"Sauerwald, J.","first_name":"J.","last_name":"Sauerwald"},{"last_name":"Schmalhorst","full_name":"Schmalhorst, J.","first_name":"J."},{"last_name":"Reiss","full_name":"Reiss, G.","first_name":"G."}],"volume":98,"date_created":"2022-01-31T10:18:33Z","status":"public","intvolume":" 98","_id":"29687","article_number":"103532","issue":"10","citation":{"bibtex":"@article{Sacher_Sauerwald_Schmalhorst_Reiss_2005, title={Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions}, volume={98}, DOI={10.1063/1.2134883}, number={10103532}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Sacher, Marc and Sauerwald, J. and Schmalhorst, J. and Reiss, G.}, year={2005} }","mla":"Sacher, Marc, et al. “Influence of Noble-Gas Ion Irradiation on Alumina Barrier of Magnetic Tunnel Junctions.” Journal of Applied Physics, vol. 98, no. 10, 103532, AIP Publishing, 2005, doi:10.1063/1.2134883.","ama":"Sacher M, Sauerwald J, Schmalhorst J, Reiss G. Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions. Journal of Applied Physics. 2005;98(10). doi:10.1063/1.2134883","apa":"Sacher, M., Sauerwald, J., Schmalhorst, J., & Reiss, G. (2005). Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions. Journal of Applied Physics, 98(10), Article 103532. https://doi.org/10.1063/1.2134883","chicago":"Sacher, Marc, J. Sauerwald, J. Schmalhorst, and G. Reiss. “Influence of Noble-Gas Ion Irradiation on Alumina Barrier of Magnetic Tunnel Junctions.” Journal of Applied Physics 98, no. 10 (2005). https://doi.org/10.1063/1.2134883.","ieee":"M. Sacher, J. Sauerwald, J. Schmalhorst, and G. Reiss, “Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions,” Journal of Applied Physics, vol. 98, no. 10, Art. no. 103532, 2005, doi: 10.1063/1.2134883.","short":"M. Sacher, J. Sauerwald, J. Schmalhorst, G. Reiss, Journal of Applied Physics 98 (2005)."},"year":"2005","type":"journal_article","title":"Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions","department":[{"_id":"15"},{"_id":"576"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","date_updated":"2022-01-31T10:18:52Z","doi":"10.1063/1.2134883","language":[{"iso":"eng"}]},{"citation":{"ama":"Stich N, Kitzerow H-S. Superposition of patterns in cross-linked liquid crystals. Journal of Applied Physics. 2005;97(3). doi:10.1063/1.1832744","apa":"Stich, N., & Kitzerow, H.-S. (2005). Superposition of patterns in cross-linked liquid crystals. Journal of Applied Physics, 97(3), Article 033519. https://doi.org/10.1063/1.1832744","chicago":"Stich, N., and Heinz-Siegfried Kitzerow. “Superposition of Patterns in Cross-Linked Liquid Crystals.” Journal of Applied Physics 97, no. 3 (2005). https://doi.org/10.1063/1.1832744.","bibtex":"@article{Stich_Kitzerow_2005, title={Superposition of patterns in cross-linked liquid crystals}, volume={97}, DOI={10.1063/1.1832744}, number={3033519}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Stich, N. and Kitzerow, Heinz-Siegfried}, year={2005} }","mla":"Stich, N., and Heinz-Siegfried Kitzerow. “Superposition of Patterns in Cross-Linked Liquid Crystals.” Journal of Applied Physics, vol. 97, no. 3, 033519, AIP Publishing, 2005, doi:10.1063/1.1832744.","short":"N. Stich, H.-S. Kitzerow, Journal of Applied Physics 97 (2005).","ieee":"N. Stich and H.-S. Kitzerow, “Superposition of patterns in cross-linked liquid crystals,” Journal of Applied Physics, vol. 97, no. 3, Art. no. 033519, 2005, doi: 10.1063/1.1832744."},"type":"journal_article","year":"2005","intvolume":" 97","_id":"39770","article_number":"033519","issue":"3","publisher":"AIP Publishing","author":[{"last_name":"Stich","full_name":"Stich, N.","first_name":"N."},{"last_name":"Kitzerow","id":"254","first_name":"Heinz-Siegfried","full_name":"Kitzerow, Heinz-Siegfried"}],"publication":"Journal of Applied Physics","keyword":["General Physics and Astronomy"],"volume":97,"status":"public","date_created":"2023-01-24T19:14:46Z","user_id":"254","language":[{"iso":"eng"}],"date_updated":"2023-01-24T19:15:41Z","doi":"10.1063/1.1832744","department":[{"_id":"313"},{"_id":"638"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","title":"Superposition of patterns in cross-linked liquid crystals"},{"doi":"10.1063/1.1703827","date_updated":"2022-01-06T07:03:59Z","_id":"8706","language":[{"iso":"eng"}],"page":"5715-5721","year":"2004","type":"journal_article","citation":{"bibtex":"@article{Schmidt_Bock_Versen_Kunze_Reuter_Wieck_2004, title={Capacitance and tunneling spectroscopy of InAs quantum dots}, DOI={10.1063/1.1703827}, journal={Journal of Applied Physics}, author={Schmidt, K. H. and Bock, C. and Versen, M. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2004}, pages={5715–5721} }","mla":"Schmidt, K. H., et al. “Capacitance and Tunneling Spectroscopy of InAs Quantum Dots.” Journal of Applied Physics, 2004, pp. 5715–21, doi:10.1063/1.1703827.","chicago":"Schmidt, K. H., C. Bock, M. Versen, U. Kunze, Dirk Reuter, and A. D. Wieck. “Capacitance and Tunneling Spectroscopy of InAs Quantum Dots.” Journal of Applied Physics, 2004, 5715–21. https://doi.org/10.1063/1.1703827.","ama":"Schmidt KH, Bock C, Versen M, Kunze U, Reuter D, Wieck AD. Capacitance and tunneling spectroscopy of InAs quantum dots. Journal of Applied Physics. 2004:5715-5721. doi:10.1063/1.1703827","apa":"Schmidt, K. H., Bock, C., Versen, M., Kunze, U., Reuter, D., & Wieck, A. D. (2004). Capacitance and tunneling spectroscopy of InAs quantum dots. Journal of Applied Physics, 5715–5721. https://doi.org/10.1063/1.1703827","ieee":"K. H. Schmidt, C. Bock, M. Versen, U. Kunze, D. Reuter, and A. D. Wieck, “Capacitance and tunneling spectroscopy of InAs quantum dots,” Journal of Applied Physics, pp. 5715–5721, 2004.","short":"K.H. Schmidt, C. Bock, M. Versen, U. Kunze, D. Reuter, A.D. Wieck, Journal of Applied Physics (2004) 5715–5721."},"user_id":"42514","title":"Capacitance and tunneling spectroscopy of InAs quantum dots","date_created":"2019-03-27T12:14:53Z","status":"public","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication":"Journal of Applied Physics","department":[{"_id":"15"},{"_id":"230"}],"author":[{"full_name":"Schmidt, K. H.","first_name":"K. H.","last_name":"Schmidt"},{"last_name":"Bock","full_name":"Bock, C.","first_name":"C."},{"last_name":"Versen","first_name":"M.","full_name":"Versen, M."},{"first_name":"U.","full_name":"Kunze, U.","last_name":"Kunze"},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."}]},{"intvolume":" 96","_id":"29692","issue":"11","type":"journal_article","citation":{"ieee":"T. Dimopoulos, G. Gieres, J. Wecker, N. Wiese, and M. Sacher, “Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes,” Journal of Applied Physics, vol. 96, no. 11, pp. 6382–6386, 2004, doi: 10.1063/1.1808899.","short":"T. Dimopoulos, G. Gieres, J. Wecker, N. Wiese, M. Sacher, Journal of Applied Physics 96 (2004) 6382–6386.","mla":"Dimopoulos, T., et al. “Thermal Annealing of Junctions with Amorphous and Polycrystalline Ferromagnetic Electrodes.” Journal of Applied Physics, vol. 96, no. 11, AIP Publishing, 2004, pp. 6382–86, doi:10.1063/1.1808899.","bibtex":"@article{Dimopoulos_Gieres_Wecker_Wiese_Sacher_2004, title={Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes}, volume={96}, DOI={10.1063/1.1808899}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Dimopoulos, T. and Gieres, G. and Wecker, J. and Wiese, N. and Sacher, Marc}, year={2004}, pages={6382–6386} }","ama":"Dimopoulos T, Gieres G, Wecker J, Wiese N, Sacher M. Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes. Journal of Applied Physics. 2004;96(11):6382-6386. doi:10.1063/1.1808899","apa":"Dimopoulos, T., Gieres, G., Wecker, J., Wiese, N., & Sacher, M. (2004). Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes. Journal of Applied Physics, 96(11), 6382–6386. https://doi.org/10.1063/1.1808899","chicago":"Dimopoulos, T., G. Gieres, J. Wecker, N. Wiese, and Marc Sacher. “Thermal Annealing of Junctions with Amorphous and Polycrystalline Ferromagnetic Electrodes.” Journal of Applied Physics 96, no. 11 (2004): 6382–86. https://doi.org/10.1063/1.1808899."},"year":"2004","page":"6382-6386","user_id":"26883","publisher":"AIP Publishing","author":[{"last_name":"Dimopoulos","first_name":"T.","full_name":"Dimopoulos, T."},{"last_name":"Gieres","first_name":"G.","full_name":"Gieres, G."},{"last_name":"Wecker","full_name":"Wecker, J.","first_name":"J."},{"last_name":"Wiese","full_name":"Wiese, N.","first_name":"N."},{"first_name":"Marc","full_name":"Sacher, Marc","last_name":"Sacher","id":"26883"}],"keyword":["General Physics and Astronomy"],"publication":"Journal of Applied Physics","status":"public","date_created":"2022-01-31T10:23:21Z","volume":96,"date_updated":"2022-01-31T10:23:40Z","doi":"10.1063/1.1808899","language":[{"iso":"eng"}],"title":"Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes","department":[{"_id":"15"},{"_id":"576"}],"publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]}},{"publication":"Journal of Applied Physics","publisher":"AIP Publishing","author":[{"orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","first_name":"Cedrik","id":"20798","last_name":"Meier"},{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"full_name":"Riedesel, Christof","first_name":"Christof","last_name":"Riedesel"},{"first_name":"Andreas D.","full_name":"Wieck, Andreas D.","last_name":"Wieck"}],"volume":93,"date_created":"2019-02-13T14:49:57Z","status":"public","extern":"1","user_id":"20798","page":"6100-6106","citation":{"ieee":"C. Meier, D. Reuter, C. Riedesel, and A. D. Wieck, “Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures,” Journal of Applied Physics, vol. 93, no. 10, pp. 6100–6106, 2003.","short":"C. Meier, D. Reuter, C. Riedesel, A.D. Wieck, Journal of Applied Physics 93 (2003) 6100–6106.","mla":"Meier, Cedrik, et al. “Fabrication of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor Heterostructures.” Journal of Applied Physics, vol. 93, no. 10, AIP Publishing, 2003, pp. 6100–06, doi:10.1063/1.1563032.","bibtex":"@article{Meier_Reuter_Riedesel_Wieck_2003, title={Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures}, volume={93}, DOI={10.1063/1.1563032}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Meier, Cedrik and Reuter, Dirk and Riedesel, Christof and Wieck, Andreas D.}, year={2003}, pages={6100–6106} }","chicago":"Meier, Cedrik, Dirk Reuter, Christof Riedesel, and Andreas D. Wieck. “Fabrication of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor Heterostructures.” Journal of Applied Physics 93, no. 10 (2003): 6100–6106. https://doi.org/10.1063/1.1563032.","ama":"Meier C, Reuter D, Riedesel C, Wieck AD. Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures. Journal of Applied Physics. 2003;93(10):6100-6106. doi:10.1063/1.1563032","apa":"Meier, C., Reuter, D., Riedesel, C., & Wieck, A. D. (2003). Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures. Journal of Applied Physics, 93(10), 6100–6106. https://doi.org/10.1063/1.1563032"},"type":"journal_article","year":"2003","intvolume":" 93","_id":"7681","issue":"10","department":[{"_id":"15"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","title":"Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:43Z","doi":"10.1063/1.1563032"},{"language":[{"iso":"eng"}],"page":"6100-6106","year":"2003","citation":{"ieee":"C. Meier, D. Reuter, C. Riedesel, and A. D. Wieck, “Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures,” Journal of Applied Physics, pp. 6100–6106, 2003.","short":"C. Meier, D. Reuter, C. Riedesel, A.D. Wieck, Journal of Applied Physics (2003) 6100–6106.","bibtex":"@article{Meier_Reuter_Riedesel_Wieck_2003, title={Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures}, DOI={10.1063/1.1563032}, journal={Journal of Applied Physics}, author={Meier, Cedrik and Reuter, Dirk and Riedesel, Christof and Wieck, Andreas D.}, year={2003}, pages={6100–6106} }","mla":"Meier, Cedrik, et al. “Fabrication of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor Heterostructures.” Journal of Applied Physics, 2003, pp. 6100–06, doi:10.1063/1.1563032.","chicago":"Meier, Cedrik, Dirk Reuter, Christof Riedesel, and Andreas D. Wieck. “Fabrication of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor Heterostructures.” Journal of Applied Physics, 2003, 6100–6106. https://doi.org/10.1063/1.1563032.","ama":"Meier C, Reuter D, Riedesel C, Wieck AD. Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures. Journal of Applied Physics. 2003:6100-6106. doi:10.1063/1.1563032","apa":"Meier, C., Reuter, D., Riedesel, C., & Wieck, A. D. (2003). Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures. Journal of Applied Physics, 6100–6106. https://doi.org/10.1063/1.1563032"},"type":"journal_article","doi":"10.1063/1.1563032","_id":"8720","date_updated":"2022-01-06T07:03:59Z","date_created":"2019-03-28T14:54:53Z","status":"public","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","department":[{"_id":"15"},{"_id":"230"}],"publication":"Journal of Applied Physics","author":[{"first_name":"Cedrik","full_name":"Meier, Cedrik","last_name":"Meier"},{"id":"37763","last_name":"Reuter","full_name":"Reuter, Dirk","first_name":"Dirk"},{"last_name":"Riedesel","first_name":"Christof","full_name":"Riedesel, Christof"},{"last_name":"Wieck","first_name":"Andreas D.","full_name":"Wieck, Andreas D."}],"user_id":"42514","title":"Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures"},{"department":[{"_id":"15"}],"publication_identifier":{"issn":["0021-8979"]},"publication_status":"published","title":"Planar Hall sensors for micro-Hall magnetometry","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:43Z","doi":"10.1063/1.1453338","author":[{"last_name":"Rahm","full_name":"Rahm, M.","first_name":"M."},{"last_name":"Raabe","full_name":"Raabe, J.","first_name":"J."},{"first_name":"R.","full_name":"Pulwey, R.","last_name":"Pulwey"},{"last_name":"Biberger","first_name":"J.","full_name":"Biberger, J."},{"last_name":"Wegscheider","first_name":"W.","full_name":"Wegscheider, W."},{"last_name":"Weiss","full_name":"Weiss, D.","first_name":"D."},{"last_name":"Meier","id":"20798","first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik"}],"publisher":"AIP Publishing","publication":"Journal of Applied Physics","status":"public","date_created":"2019-02-13T14:52:58Z","volume":91,"extern":"1","user_id":"20798","type":"journal_article","year":"2002","citation":{"short":"M. Rahm, J. Raabe, R. Pulwey, J. Biberger, W. Wegscheider, D. Weiss, C. Meier, Journal of Applied Physics 91 (2002) 7980.","ieee":"M. Rahm et al., “Planar Hall sensors for micro-Hall magnetometry,” Journal of Applied Physics, vol. 91, no. 10, p. 7980, 2002.","ama":"Rahm M, Raabe J, Pulwey R, et al. Planar Hall sensors for micro-Hall magnetometry. Journal of Applied Physics. 2002;91(10):7980. doi:10.1063/1.1453338","apa":"Rahm, M., Raabe, J., Pulwey, R., Biberger, J., Wegscheider, W., Weiss, D., & Meier, C. (2002). Planar Hall sensors for micro-Hall magnetometry. Journal of Applied Physics, 91(10), 7980. https://doi.org/10.1063/1.1453338","chicago":"Rahm, M., J. Raabe, R. Pulwey, J. Biberger, W. Wegscheider, D. Weiss, and Cedrik Meier. “Planar Hall Sensors for Micro-Hall Magnetometry.” Journal of Applied Physics 91, no. 10 (2002): 7980. https://doi.org/10.1063/1.1453338.","bibtex":"@article{Rahm_Raabe_Pulwey_Biberger_Wegscheider_Weiss_Meier_2002, title={Planar Hall sensors for micro-Hall magnetometry}, volume={91}, DOI={10.1063/1.1453338}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Rahm, M. and Raabe, J. and Pulwey, R. and Biberger, J. and Wegscheider, W. and Weiss, D. and Meier, Cedrik}, year={2002}, pages={7980} }","mla":"Rahm, M., et al. “Planar Hall Sensors for Micro-Hall Magnetometry.” Journal of Applied Physics, vol. 91, no. 10, AIP Publishing, 2002, p. 7980, doi:10.1063/1.1453338."},"page":"7980","_id":"7685","intvolume":" 91","issue":"10"},{"date_updated":"2022-01-06T07:04:00Z","_id":"8763","doi":"10.1063/1.373660","citation":{"short":"D. Reuter, M. Versen, M.D. Schneider, A.D. Wieck, Journal of Applied Physics (2002) 321–325.","ieee":"D. Reuter, M. Versen, M. D. Schneider, and A. D. Wieck, “Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities,” Journal of Applied Physics, pp. 321–325, 2002.","apa":"Reuter, D., Versen, M., Schneider, M. D., & Wieck, A. D. (2002). Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities. Journal of Applied Physics, 321–325. https://doi.org/10.1063/1.373660","ama":"Reuter D, Versen M, Schneider MD, Wieck AD. Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities. Journal of Applied Physics. 2002:321-325. doi:10.1063/1.373660","chicago":"Reuter, Dirk, M. Versen, M. D. Schneider, and A. D. Wieck. “Increased Mobility Anisotropy in Selectively Doped AlxGa1−xAs/GaAs Heterostructures with High Electron Densities.” Journal of Applied Physics, 2002, 321–25. https://doi.org/10.1063/1.373660.","bibtex":"@article{Reuter_Versen_Schneider_Wieck_2002, title={Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities}, DOI={10.1063/1.373660}, journal={Journal of Applied Physics}, author={Reuter, Dirk and Versen, M. and Schneider, M. D. and Wieck, A. D.}, year={2002}, pages={321–325} }","mla":"Reuter, Dirk, et al. “Increased Mobility Anisotropy in Selectively Doped AlxGa1−xAs/GaAs Heterostructures with High Electron Densities.” Journal of Applied Physics, 2002, pp. 321–25, doi:10.1063/1.373660."},"type":"journal_article","year":"2002","page":"321-325","language":[{"iso":"eng"}],"title":"Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities","user_id":"42514","author":[{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"last_name":"Versen","first_name":"M.","full_name":"Versen, M."},{"first_name":"M. D.","full_name":"Schneider, M. D.","last_name":"Schneider"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."}],"department":[{"_id":"15"},{"_id":"230"}],"publication":"Journal of Applied Physics","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"status":"public","date_created":"2019-04-01T07:33:21Z"},{"doi":"10.1063/1.366304","_id":"8788","date_updated":"2022-01-06T07:04:00Z","language":[{"iso":"eng"}],"type":"journal_article","citation":{"short":"D. Reuter, G. Gerth, J. Kirschner, Journal of Applied Physics (2002) 5374–5377.","ieee":"D. Reuter, G. Gerth, and J. Kirschner, “Modifying diffusion anisotropies: Cap layer induced changes in spreading anisotropies,” Journal of Applied Physics, pp. 5374–5377, 2002.","chicago":"Reuter, Dirk, G. Gerth, and J. Kirschner. “Modifying Diffusion Anisotropies: Cap Layer Induced Changes in Spreading Anisotropies.” Journal of Applied Physics, 2002, 5374–77. https://doi.org/10.1063/1.366304.","ama":"Reuter D, Gerth G, Kirschner J. Modifying diffusion anisotropies: Cap layer induced changes in spreading anisotropies. Journal of Applied Physics. 2002:5374-5377. doi:10.1063/1.366304","apa":"Reuter, D., Gerth, G., & Kirschner, J. (2002). Modifying diffusion anisotropies: Cap layer induced changes in spreading anisotropies. Journal of Applied Physics, 5374–5377. https://doi.org/10.1063/1.366304","mla":"Reuter, Dirk, et al. “Modifying Diffusion Anisotropies: Cap Layer Induced Changes in Spreading Anisotropies.” Journal of Applied Physics, 2002, pp. 5374–77, doi:10.1063/1.366304.","bibtex":"@article{Reuter_Gerth_Kirschner_2002, title={Modifying diffusion anisotropies: Cap layer induced changes in spreading anisotropies}, DOI={10.1063/1.366304}, journal={Journal of Applied Physics}, author={Reuter, Dirk and Gerth, G. and Kirschner, J.}, year={2002}, pages={5374–5377} }"},"year":"2002","page":"5374-5377","user_id":"42514","title":"Modifying diffusion anisotropies: Cap layer induced changes in spreading anisotropies","status":"public","date_created":"2019-04-01T08:43:12Z","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","author":[{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"last_name":"Gerth","first_name":"G.","full_name":"Gerth, G."},{"full_name":"Kirschner, J.","first_name":"J.","last_name":"Kirschner"}],"department":[{"_id":"15"},{"_id":"230"}],"publication":"Journal of Applied Physics"},{"_id":"7693","intvolume":" 86","issue":"11","page":"6605-6607","year":"1999","citation":{"short":"S. Eshlaghi, C. Meier, D. Suter, D. Reuter, A.D. Wieck, Journal of Applied Physics 86 (1999) 6605–6607.","ieee":"S. Eshlaghi, C. Meier, D. Suter, D. Reuter, and A. D. Wieck, “Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells,” Journal of Applied Physics, vol. 86, no. 11, pp. 6605–6607, 1999.","ama":"Eshlaghi S, Meier C, Suter D, Reuter D, Wieck AD. Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells. Journal of Applied Physics. 1999;86(11):6605-6607. doi:10.1063/1.371720","apa":"Eshlaghi, S., Meier, C., Suter, D., Reuter, D., & Wieck, A. D. (1999). Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells. Journal of Applied Physics, 86(11), 6605–6607. https://doi.org/10.1063/1.371720","chicago":"Eshlaghi, Soheyla, Cedrik Meier, Dieter Suter, D. Reuter, and A. D. Wieck. “Depth Profile of the Implantation-Enhanced Intermixing of Ga+ Focused Ion Beam in AlAs/GaAs Quantum Wells.” Journal of Applied Physics 86, no. 11 (1999): 6605–7. https://doi.org/10.1063/1.371720.","bibtex":"@article{Eshlaghi_Meier_Suter_Reuter_Wieck_1999, title={Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells}, volume={86}, DOI={10.1063/1.371720}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Eshlaghi, Soheyla and Meier, Cedrik and Suter, Dieter and Reuter, D. and Wieck, A. D.}, year={1999}, pages={6605–6607} }","mla":"Eshlaghi, Soheyla, et al. “Depth Profile of the Implantation-Enhanced Intermixing of Ga+ Focused Ion Beam in AlAs/GaAs Quantum Wells.” Journal of Applied Physics, vol. 86, no. 11, AIP Publishing, 1999, pp. 6605–07, doi:10.1063/1.371720."},"type":"journal_article","extern":"1","user_id":"20798","publication":"Journal of Applied Physics","author":[{"full_name":"Eshlaghi, Soheyla","first_name":"Soheyla","last_name":"Eshlaghi"},{"full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","first_name":"Cedrik","id":"20798","last_name":"Meier"},{"last_name":"Suter","full_name":"Suter, Dieter","first_name":"Dieter"},{"first_name":"D.","full_name":"Reuter, D.","last_name":"Reuter"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."}],"publisher":"AIP Publishing","date_created":"2019-02-13T14:59:37Z","status":"public","volume":86,"date_updated":"2022-01-06T07:03:44Z","doi":"10.1063/1.371720","language":[{"iso":"eng"}],"title":"Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells","department":[{"_id":"15"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published"},{"doi":"10.1063/1.356471","date_updated":"2023-01-26T11:49:09Z","language":[{"iso":"eng"}],"title":"Bistability in polymer‐dispersed ferroelectric liquid crystals","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"department":[{"_id":"313"}],"issue":"2","_id":"40322","intvolume":" 75","page":"710-716","type":"journal_article","year":"1994","citation":{"short":"H. Molsen, H.-S. Kitzerow, Journal of Applied Physics 75 (1994) 710–716.","ieee":"H. Molsen and H.-S. Kitzerow, “Bistability in polymer‐dispersed ferroelectric liquid crystals,” Journal of Applied Physics, vol. 75, no. 2, pp. 710–716, 1994, doi: 10.1063/1.356471.","apa":"Molsen, H., & Kitzerow, H.-S. (1994). Bistability in polymer‐dispersed ferroelectric liquid crystals. Journal of Applied Physics, 75(2), 710–716. https://doi.org/10.1063/1.356471","ama":"Molsen H, Kitzerow H-S. Bistability in polymer‐dispersed ferroelectric liquid crystals. Journal of Applied Physics. 1994;75(2):710-716. doi:10.1063/1.356471","chicago":"Molsen, Henning, and Heinz-Siegfried Kitzerow. “Bistability in Polymer‐dispersed Ferroelectric Liquid Crystals.” Journal of Applied Physics 75, no. 2 (1994): 710–16. https://doi.org/10.1063/1.356471.","bibtex":"@article{Molsen_Kitzerow_1994, title={Bistability in polymer‐dispersed ferroelectric liquid crystals}, volume={75}, DOI={10.1063/1.356471}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Molsen, Henning and Kitzerow, Heinz-Siegfried}, year={1994}, pages={710–716} }","mla":"Molsen, Henning, and Heinz-Siegfried Kitzerow. “Bistability in Polymer‐dispersed Ferroelectric Liquid Crystals.” Journal of Applied Physics, vol. 75, no. 2, AIP Publishing, 1994, pp. 710–16, doi:10.1063/1.356471."},"user_id":"254","extern":"1","volume":75,"date_created":"2023-01-26T11:06:23Z","status":"public","publication":"Journal of Applied Physics","keyword":["General Physics and Astronomy"],"publisher":"AIP Publishing","author":[{"first_name":"Henning","full_name":"Molsen, Henning","last_name":"Molsen"},{"first_name":"Heinz-Siegfried","full_name":"Kitzerow, Heinz-Siegfried","last_name":"Kitzerow","id":"254"}]}]