[{"intvolume":"       127","citation":{"mla":"Zhao, Jie, et al. “Poling Thin-Film x-Cut Lithium Niobate for Quasi-Phase Matching with Sub-Micrometer Periodicity.” <i>Journal of Applied Physics</i>, vol. 127, no. 19, 193104, AIP Publishing, 2020, doi:<a href=\"https://doi.org/10.1063/1.5143266\">10.1063/1.5143266</a>.","short":"J. Zhao, M. Rüsing, M. Roeper, L.M. Eng, S. Mookherjea, Journal of Applied Physics 127 (2020).","bibtex":"@article{Zhao_Rüsing_Roeper_Eng_Mookherjea_2020, title={Poling thin-film x-cut lithium niobate for quasi-phase matching with sub-micrometer periodicity}, volume={127}, DOI={<a href=\"https://doi.org/10.1063/1.5143266\">10.1063/1.5143266</a>}, number={19193104}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zhao, Jie and Rüsing, Michael and Roeper, Matthias and Eng, Lukas M. and Mookherjea, Shayan}, year={2020} }","apa":"Zhao, J., Rüsing, M., Roeper, M., Eng, L. M., &#38; Mookherjea, S. (2020). Poling thin-film x-cut lithium niobate for quasi-phase matching with sub-micrometer periodicity. <i>Journal of Applied Physics</i>, <i>127</i>(19), Article 193104. <a href=\"https://doi.org/10.1063/1.5143266\">https://doi.org/10.1063/1.5143266</a>","chicago":"Zhao, Jie, Michael Rüsing, Matthias Roeper, Lukas M. Eng, and Shayan Mookherjea. “Poling Thin-Film x-Cut Lithium Niobate for Quasi-Phase Matching with Sub-Micrometer Periodicity.” <i>Journal of Applied Physics</i> 127, no. 19 (2020). <a href=\"https://doi.org/10.1063/1.5143266\">https://doi.org/10.1063/1.5143266</a>.","ieee":"J. Zhao, M. Rüsing, M. Roeper, L. M. Eng, and S. Mookherjea, “Poling thin-film x-cut lithium niobate for quasi-phase matching with sub-micrometer periodicity,” <i>Journal of Applied Physics</i>, vol. 127, no. 19, Art. no. 193104, 2020, doi: <a href=\"https://doi.org/10.1063/1.5143266\">10.1063/1.5143266</a>.","ama":"Zhao J, Rüsing M, Roeper M, Eng LM, Mookherjea S. Poling thin-film x-cut lithium niobate for quasi-phase matching with sub-micrometer periodicity. <i>Journal of Applied Physics</i>. 2020;127(19). doi:<a href=\"https://doi.org/10.1063/1.5143266\">10.1063/1.5143266</a>"},"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","doi":"10.1063/1.5143266","volume":127,"author":[{"first_name":"Jie","full_name":"Zhao, Jie","last_name":"Zhao"},{"first_name":"Michael","last_name":"Rüsing","orcid":"0000-0003-4682-4577","full_name":"Rüsing, Michael","id":"22501"},{"full_name":"Roeper, Matthias","last_name":"Roeper","first_name":"Matthias"},{"last_name":"Eng","full_name":"Eng, Lukas M.","first_name":"Lukas M."},{"full_name":"Mookherjea, Shayan","last_name":"Mookherjea","first_name":"Shayan"}],"date_updated":"2023-10-11T08:07:28Z","status":"public","type":"journal_article","article_type":"original","article_number":"193104","user_id":"22501","_id":"47955","year":"2020","issue":"19","title":"Poling thin-film x-cut lithium niobate for quasi-phase matching with sub-micrometer periodicity","date_created":"2023-10-11T08:06:39Z","publisher":"AIP Publishing","abstract":[{"text":"Quasi-phase-matched grating structures in lithium niobate waveguides with sub-micrometer periodicities will benefit the development of short-wavelength nonlinear optical devices. Here, we report on the reproducible formation of periodically poled domains in x-cut single-crystalline thin-film lithium niobate with periodicities as short as 600 nm. Shaped single-voltage poling pulses were applied to electrode structures that were fabricated by a combination of electron-beam and direct-writing laser lithography. Evidence of successful poling with good quality was obtained through second-harmonic microscopy and piezoresponse force microscopy imaging. For the sub-micrometer period structures, we observed patterns with a double periodicity formed by domain interactions and features with sizes <200 nm.","lang":"eng"}],"publication":"Journal of Applied Physics","language":[{"iso":"eng"}],"keyword":["General Physics and Astronomy"]},{"language":[{"iso":"eng"}],"_id":"59686","department":[{"_id":"977"}],"user_id":"15911","abstract":[{"lang":"eng","text":"The monolithic growth of III–V materials directly on Si substrates provides a promising integration approach for passive and active silicon photonic integrated circuits but still faces great challenges in crystal quality due to misfit defect formation. Nano-ridge engineering is a new approach that enables the integration of III–V based devices on trench-patterned Si substrates with very high crystal quality. Using selective area growth, the III–V material is deposited into narrow trenches to reduce the dislocation defect density by aspect ratio trapping. The growth is continued out of the trench pattern and a box-shaped III–V nano-ridge is engineered by adjusting the growth parameters. A flat (001) GaAs nano-ridge surface enables the epitaxial integration of a common InGaAs/GaAs multi-quantum-well (MQW) structure as an optical gain medium to build a laser diode. In this study, a clear correlation is found between the photoluminescence (PL) lifetime, extracted from time-resolved photoluminescence (TRPL) measurements, with the InGaAs/GaAs nano-ridge size and defect density, which are both predefined by the nano-ridge related pattern trench width. Through the addition of an InGaP passivation layer, a MQW PL lifetime of up to 800 ps and 1000 ps is measured when pumped at 900 nm (only QWs were excited) and 800 nm (QWs + barrier excited), respectively. The addition of a bottom carrier blocking layer further increases this lifetime to ∼2.5ns (pumped at 800 nm), which clearly demonstrates the high crystal quality of the nano-ridge material. These TRPL measurements not only deliver quick and valuable feedback about the III–V material quality but also provide an important understanding for the heterostructure design and carrier confinement of the nano-ridge laser diode."}],"status":"public","publication":"Journal of Applied Physics","type":"journal_article","title":"Time-resolved photoluminescence characterization of InGaAs/GaAs nano-ridges monolithically grown on 300 mm Si substrates","doi":"10.1063/1.5139636","date_updated":"2025-04-25T07:28:42Z","publisher":"AIP Publishing","volume":127,"date_created":"2025-04-25T07:18:24Z","author":[{"first_name":"Yuting","last_name":"Shi","full_name":"Shi, Yuting"},{"full_name":"Kreuzer, Lisa C.","last_name":"Kreuzer","first_name":"Lisa C."},{"first_name":"Nils Christopher","last_name":"Gerhardt","orcid":"0009-0002-5538-231X","id":"115298","full_name":"Gerhardt, Nils Christopher"},{"last_name":"Pantouvaki","full_name":"Pantouvaki, Marianna","first_name":"Marianna"},{"last_name":"Van Campenhout","full_name":"Van Campenhout, Joris","first_name":"Joris"},{"full_name":"Baryshnikova, Marina","last_name":"Baryshnikova","first_name":"Marina"},{"first_name":"Robert","last_name":"Langer","full_name":"Langer, Robert"},{"first_name":"Dries","last_name":"Van Thourhout","full_name":"Van Thourhout, Dries"},{"first_name":"Bernardette","last_name":"Kunert","full_name":"Kunert, Bernardette"}],"year":"2020","intvolume":"       127","citation":{"apa":"Shi, Y., Kreuzer, L. C., Gerhardt, N. C., Pantouvaki, M., Van Campenhout, J., Baryshnikova, M., Langer, R., Van Thourhout, D., &#38; Kunert, B. (2020). Time-resolved photoluminescence characterization of InGaAs/GaAs nano-ridges monolithically grown on 300 mm Si substrates. <i>Journal of Applied Physics</i>, <i>127</i>(10). <a href=\"https://doi.org/10.1063/1.5139636\">https://doi.org/10.1063/1.5139636</a>","mla":"Shi, Yuting, et al. “Time-Resolved Photoluminescence Characterization of InGaAs/GaAs Nano-Ridges Monolithically Grown on 300 Mm Si Substrates.” <i>Journal of Applied Physics</i>, vol. 127, no. 10, AIP Publishing, 2020, doi:<a href=\"https://doi.org/10.1063/1.5139636\">10.1063/1.5139636</a>.","short":"Y. Shi, L.C. Kreuzer, N.C. Gerhardt, M. Pantouvaki, J. Van Campenhout, M. Baryshnikova, R. Langer, D. Van Thourhout, B. Kunert, Journal of Applied Physics 127 (2020).","bibtex":"@article{Shi_Kreuzer_Gerhardt_Pantouvaki_Van Campenhout_Baryshnikova_Langer_Van Thourhout_Kunert_2020, title={Time-resolved photoluminescence characterization of InGaAs/GaAs nano-ridges monolithically grown on 300 mm Si substrates}, volume={127}, DOI={<a href=\"https://doi.org/10.1063/1.5139636\">10.1063/1.5139636</a>}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Shi, Yuting and Kreuzer, Lisa C. and Gerhardt, Nils Christopher and Pantouvaki, Marianna and Van Campenhout, Joris and Baryshnikova, Marina and Langer, Robert and Van Thourhout, Dries and Kunert, Bernardette}, year={2020} }","ieee":"Y. Shi <i>et al.</i>, “Time-resolved photoluminescence characterization of InGaAs/GaAs nano-ridges monolithically grown on 300 mm Si substrates,” <i>Journal of Applied Physics</i>, vol. 127, no. 10, 2020, doi: <a href=\"https://doi.org/10.1063/1.5139636\">10.1063/1.5139636</a>.","chicago":"Shi, Yuting, Lisa C. Kreuzer, Nils Christopher Gerhardt, Marianna Pantouvaki, Joris Van Campenhout, Marina Baryshnikova, Robert Langer, Dries Van Thourhout, and Bernardette Kunert. “Time-Resolved Photoluminescence Characterization of InGaAs/GaAs Nano-Ridges Monolithically Grown on 300 Mm Si Substrates.” <i>Journal of Applied Physics</i> 127, no. 10 (2020). <a href=\"https://doi.org/10.1063/1.5139636\">https://doi.org/10.1063/1.5139636</a>.","ama":"Shi Y, Kreuzer LC, Gerhardt NC, et al. Time-resolved photoluminescence characterization of InGaAs/GaAs nano-ridges monolithically grown on 300 mm Si substrates. <i>Journal of Applied Physics</i>. 2020;127(10). doi:<a href=\"https://doi.org/10.1063/1.5139636\">10.1063/1.5139636</a>"},"publication_identifier":{"issn":["0021-8979","1089-7550"]},"quality_controlled":"1","publication_status":"published","issue":"10"},{"date_created":"2019-03-26T12:48:57Z","author":[{"full_name":"Deppe, M.","last_name":"Deppe","first_name":"M."},{"last_name":"Gerlach","full_name":"Gerlach, J. W.","first_name":"J. W."},{"full_name":"Shvarkov, S.","last_name":"Shvarkov","first_name":"S."},{"first_name":"D.","last_name":"Rogalla","full_name":"Rogalla, D."},{"last_name":"Becker","full_name":"Becker, H.-W.","first_name":"H.-W."},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"orcid":"0000-0003-1121-3565","last_name":"As","id":"14","full_name":"As, Donat Josef","first_name":"Donat Josef"}],"date_updated":"2022-01-06T07:03:58Z","doi":"10.1063/1.5066095","title":"Germanium doping of cubic GaN grown by molecular beam epitaxy","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"citation":{"apa":"Deppe, M., Gerlach, J. W., Shvarkov, S., Rogalla, D., Becker, H.-W., Reuter, D., &#38; As, D. J. (2019). Germanium doping of cubic GaN grown by molecular beam epitaxy. <i>Journal of Applied Physics</i>. <a href=\"https://doi.org/10.1063/1.5066095\">https://doi.org/10.1063/1.5066095</a>","bibtex":"@article{Deppe_Gerlach_Shvarkov_Rogalla_Becker_Reuter_As_2019, title={Germanium doping of cubic GaN grown by molecular beam epitaxy}, DOI={<a href=\"https://doi.org/10.1063/1.5066095\">10.1063/1.5066095</a>}, number={095703}, journal={Journal of Applied Physics}, author={Deppe, M. and Gerlach, J. W. and Shvarkov, S. and Rogalla, D. and Becker, H.-W. and Reuter, Dirk and As, Donat Josef}, year={2019} }","mla":"Deppe, M., et al. “Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy.” <i>Journal of Applied Physics</i>, 095703, 2019, doi:<a href=\"https://doi.org/10.1063/1.5066095\">10.1063/1.5066095</a>.","short":"M. Deppe, J.W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, D. Reuter, D.J. As, Journal of Applied Physics (2019).","ama":"Deppe M, Gerlach JW, Shvarkov S, et al. Germanium doping of cubic GaN grown by molecular beam epitaxy. <i>Journal of Applied Physics</i>. 2019. doi:<a href=\"https://doi.org/10.1063/1.5066095\">10.1063/1.5066095</a>","ieee":"M. Deppe <i>et al.</i>, “Germanium doping of cubic GaN grown by molecular beam epitaxy,” <i>Journal of Applied Physics</i>, 2019.","chicago":"Deppe, M., J. W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, Dirk Reuter, and Donat Josef As. “Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy.” <i>Journal of Applied Physics</i>, 2019. <a href=\"https://doi.org/10.1063/1.5066095\">https://doi.org/10.1063/1.5066095</a>."},"year":"2019","user_id":"14","department":[{"_id":"230"},{"_id":"429"}],"project":[{"name":"TRR 142 - Subproject B2","_id":"67"}],"_id":"8646","language":[{"iso":"eng"}],"article_number":"095703","type":"journal_article","publication":"Journal of Applied Physics","status":"public"},{"citation":{"mla":"Golla, C., et al. “Zinc Oxide Based Dielectric Nanoantennas for Efficient Nonlinear Frequency Conversion.” <i>Journal of Applied Physics</i>, vol. 125, no. 7, 073103, 2019, doi:<a href=\"https://doi.org/10.1063/1.5082720\">10.1063/1.5082720</a>.","bibtex":"@article{Golla_Weber_Meier_2019, title={Zinc oxide based dielectric nanoantennas for efficient nonlinear frequency conversion}, volume={125}, DOI={<a href=\"https://doi.org/10.1063/1.5082720\">10.1063/1.5082720</a>}, number={7073103}, journal={Journal of Applied Physics}, author={Golla, C. and Weber, N. and Meier, Cedrik}, year={2019} }","short":"C. Golla, N. Weber, C. Meier, Journal of Applied Physics 125 (2019).","apa":"Golla, C., Weber, N., &#38; Meier, C. (2019). Zinc oxide based dielectric nanoantennas for efficient nonlinear frequency conversion. <i>Journal of Applied Physics</i>, <i>125</i>(7). <a href=\"https://doi.org/10.1063/1.5082720\">https://doi.org/10.1063/1.5082720</a>","ama":"Golla C, Weber N, Meier C. Zinc oxide based dielectric nanoantennas for efficient nonlinear frequency conversion. <i>Journal of Applied Physics</i>. 2019;125(7). doi:<a href=\"https://doi.org/10.1063/1.5082720\">10.1063/1.5082720</a>","chicago":"Golla, C., N. Weber, and Cedrik Meier. “Zinc Oxide Based Dielectric Nanoantennas for Efficient Nonlinear Frequency Conversion.” <i>Journal of Applied Physics</i> 125, no. 7 (2019). <a href=\"https://doi.org/10.1063/1.5082720\">https://doi.org/10.1063/1.5082720</a>.","ieee":"C. Golla, N. Weber, and C. Meier, “Zinc oxide based dielectric nanoantennas for efficient nonlinear frequency conversion,” <i>Journal of Applied Physics</i>, vol. 125, no. 7, 2019."},"intvolume":"       125","year":"2019","issue":"7","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"doi":"10.1063/1.5082720","title":"Zinc oxide based dielectric nanoantennas for efficient nonlinear frequency conversion","author":[{"first_name":"C.","full_name":"Golla, C.","last_name":"Golla"},{"last_name":"Weber","full_name":"Weber, N.","first_name":"N."},{"first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","id":"20798","full_name":"Meier, Cedrik"}],"date_created":"2019-05-08T07:06:11Z","volume":125,"date_updated":"2022-01-06T07:04:18Z","status":"public","type":"journal_article","publication":"Journal of Applied Physics","language":[{"iso":"eng"}],"article_number":"073103","user_id":"20798","department":[{"_id":"15"},{"_id":"35"},{"_id":"287"},{"_id":"230"}],"project":[{"_id":"53","name":"TRR 142"},{"_id":"55","name":"TRR 142 - Project Area B"},{"_id":"66","name":"TRR 142 - Subproject B1"},{"name":"TRR 142 - Project Area C","_id":"56"},{"name":"TRR 142 - Subproject C5","_id":"75"}],"_id":"9698"},{"doi":"10.1063/1.5093257","title":"Strong nonlinear optical response from ZnO by coupled and lattice-matched nanoantennas","volume":125,"date_created":"2019-05-21T08:35:49Z","author":[{"last_name":"Protte","full_name":"Protte, Maximilian","first_name":"Maximilian"},{"first_name":"Nils","full_name":"Weber, Nils","last_name":"Weber"},{"last_name":"Golla","full_name":"Golla, Christian","first_name":"Christian"},{"id":"30525","full_name":"Zentgraf, Thomas","orcid":"0000-0002-8662-1101","last_name":"Zentgraf","first_name":"Thomas"},{"first_name":"Cedrik","id":"20798","full_name":"Meier, Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572"}],"date_updated":"2020-08-21T13:52:51Z","intvolume":"       125","citation":{"bibtex":"@article{Protte_Weber_Golla_Zentgraf_Meier_2019, title={Strong nonlinear optical response from ZnO by coupled and lattice-matched nanoantennas}, volume={125}, DOI={<a href=\"https://doi.org/10.1063/1.5093257\">10.1063/1.5093257</a>}, number={193104}, journal={Journal of Applied Physics}, author={Protte, Maximilian and Weber, Nils and Golla, Christian and Zentgraf, Thomas and Meier, Cedrik}, year={2019} }","mla":"Protte, Maximilian, et al. “Strong Nonlinear Optical Response from ZnO by Coupled and Lattice-Matched Nanoantennas.” <i>Journal of Applied Physics</i>, vol. 125, 193104, 2019, doi:<a href=\"https://doi.org/10.1063/1.5093257\">10.1063/1.5093257</a>.","short":"M. Protte, N. Weber, C. Golla, T. Zentgraf, C. Meier, Journal of Applied Physics 125 (2019).","apa":"Protte, M., Weber, N., Golla, C., Zentgraf, T., &#38; Meier, C. (2019). Strong nonlinear optical response from ZnO by coupled and lattice-matched nanoantennas. <i>Journal of Applied Physics</i>, <i>125</i>. <a href=\"https://doi.org/10.1063/1.5093257\">https://doi.org/10.1063/1.5093257</a>","chicago":"Protte, Maximilian, Nils Weber, Christian Golla, Thomas Zentgraf, and Cedrik Meier. “Strong Nonlinear Optical Response from ZnO by Coupled and Lattice-Matched Nanoantennas.” <i>Journal of Applied Physics</i> 125 (2019). <a href=\"https://doi.org/10.1063/1.5093257\">https://doi.org/10.1063/1.5093257</a>.","ieee":"M. Protte, N. Weber, C. Golla, T. Zentgraf, and C. Meier, “Strong nonlinear optical response from ZnO by coupled and lattice-matched nanoantennas,” <i>Journal of Applied Physics</i>, vol. 125, 2019.","ama":"Protte M, Weber N, Golla C, Zentgraf T, Meier C. Strong nonlinear optical response from ZnO by coupled and lattice-matched nanoantennas. <i>Journal of Applied Physics</i>. 2019;125. doi:<a href=\"https://doi.org/10.1063/1.5093257\">10.1063/1.5093257</a>"},"year":"2019","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","language":[{"iso":"eng"}],"article_number":"193104","department":[{"_id":"15"},{"_id":"287"},{"_id":"35"},{"_id":"230"},{"_id":"289"}],"user_id":"30525","_id":"9897","project":[{"name":"TRR 142","_id":"53"},{"name":"TRR 142 - Project Area B","_id":"55"},{"_id":"66","name":"TRR 142 - Subproject B1"},{"_id":"56","name":"TRR 142 - Project Area C"},{"name":"TRR 142 - Subproject C5","_id":"75"}],"status":"public","publication":"Journal of Applied Physics","type":"journal_article"},{"year":"2019","citation":{"short":"J.H. Buß, T. Schupp, D.J. As, D. Hägele, J. Rudolph, Journal of Applied Physics (2019).","bibtex":"@article{Buß_Schupp_As_Hägele_Rudolph_2019, title={Optical excitation density dependence of spin dynamics in bulk cubic GaN}, DOI={<a href=\"https://doi.org/10.1063/1.5123914\">10.1063/1.5123914</a>}, number={153901}, journal={Journal of Applied Physics}, author={Buß, J. H. and Schupp, T. and As, Donat Josef and Hägele, D. and Rudolph, J.}, year={2019} }","mla":"Buß, J. H., et al. “Optical Excitation Density Dependence of Spin Dynamics in Bulk Cubic GaN.” <i>Journal of Applied Physics</i>, 153901, 2019, doi:<a href=\"https://doi.org/10.1063/1.5123914\">10.1063/1.5123914</a>.","apa":"Buß, J. H., Schupp, T., As, D. J., Hägele, D., &#38; Rudolph, J. (2019). Optical excitation density dependence of spin dynamics in bulk cubic GaN. <i>Journal of Applied Physics</i>. <a href=\"https://doi.org/10.1063/1.5123914\">https://doi.org/10.1063/1.5123914</a>","ama":"Buß JH, Schupp T, As DJ, Hägele D, Rudolph J. Optical excitation density dependence of spin dynamics in bulk cubic GaN. <i>Journal of Applied Physics</i>. 2019. doi:<a href=\"https://doi.org/10.1063/1.5123914\">10.1063/1.5123914</a>","chicago":"Buß, J. H., T. Schupp, Donat Josef As, D. Hägele, and J. Rudolph. “Optical Excitation Density Dependence of Spin Dynamics in Bulk Cubic GaN.” <i>Journal of Applied Physics</i>, 2019. <a href=\"https://doi.org/10.1063/1.5123914\">https://doi.org/10.1063/1.5123914</a>.","ieee":"J. H. Buß, T. Schupp, D. J. As, D. Hägele, and J. Rudolph, “Optical excitation density dependence of spin dynamics in bulk cubic GaN,” <i>Journal of Applied Physics</i>, 2019."},"publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"title":"Optical excitation density dependence of spin dynamics in bulk cubic GaN","doi":"10.1063/1.5123914","date_updated":"2022-01-06T06:51:48Z","author":[{"last_name":"Buß","full_name":"Buß, J. H.","first_name":"J. H."},{"first_name":"T.","full_name":"Schupp, T.","last_name":"Schupp"},{"orcid":"0000-0003-1121-3565","last_name":"As","full_name":"As, Donat Josef","id":"14","first_name":"Donat Josef"},{"first_name":"D.","last_name":"Hägele","full_name":"Hägele, D."},{"full_name":"Rudolph, J.","last_name":"Rudolph","first_name":"J."}],"date_created":"2019-10-22T12:26:02Z","status":"public","type":"journal_article","publication":"Journal of Applied Physics","article_number":"153901","language":[{"iso":"eng"}],"_id":"13965","user_id":"14","department":[{"_id":"230"},{"_id":"429"}]},{"title":"Second harmonic microscopy of poled x-cut thin film lithium niobate: Understanding the contrast mechanism","date_created":"2023-10-11T07:47:03Z","publisher":"AIP Publishing","year":"2019","issue":"11","language":[{"iso":"eng"}],"keyword":["General Physics and Astronomy"],"abstract":[{"lang":"eng","text":"Thin film lithium niobate has been of great interest recently, and an understanding of periodically poled thin films is crucial for both fundamental physics and device developments. Second-harmonic (SH) microscopy allows for the noninvasive visualization and analysis of ferroelectric domain structures and walls. While the technique is well understood in bulk lithium niobate, SH microscopy in thin films is largely influenced by interfacial reflections and resonant enhancements, which depend on film thicknesses and substrate materials. We present a comprehensive analysis of SH microscopy in x-cut lithium niobate thin films, based on a full three-dimensional focus calculation and accounting for interface reflections. We show that the dominant signal in backreflection originates from a copropagating phase-matched process observed through reflections, rather than direct detection of the counterpropagating signal as in bulk samples. We simulate the SH signatures of domain structures by a simple model of the domain wall as an extensionless transition from a −χ(2) to a +χ(2) region. This allows us to explain the main observation of domain structures in the thin-film geometry, and, in particular, we show that the SH signal from thin poled films allows to unambiguously distinguish areas, which are completely or only partly inverted in depth."}],"publication":"Journal of Applied Physics","doi":"10.1063/1.5113727","main_file_link":[{"url":"https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.5113727/15233243/114105_1_online.pdf","open_access":"1"}],"volume":126,"author":[{"first_name":"Michael","orcid":"0000-0003-4682-4577","last_name":"Rüsing","full_name":"Rüsing, Michael","id":"22501"},{"full_name":"Zhao, J.","last_name":"Zhao","first_name":"J."},{"last_name":"Mookherjea","full_name":"Mookherjea, S.","first_name":"S."}],"date_updated":"2023-10-11T07:48:11Z","oa":"1","intvolume":"       126","citation":{"apa":"Rüsing, M., Zhao, J., &#38; Mookherjea, S. (2019). Second harmonic microscopy of poled x-cut thin film lithium niobate: Understanding the contrast mechanism. <i>Journal of Applied Physics</i>, <i>126</i>(11), Article 114105. <a href=\"https://doi.org/10.1063/1.5113727\">https://doi.org/10.1063/1.5113727</a>","short":"M. Rüsing, J. Zhao, S. Mookherjea, Journal of Applied Physics 126 (2019).","mla":"Rüsing, Michael, et al. “Second Harmonic Microscopy of Poled X-Cut Thin Film Lithium Niobate: Understanding the Contrast Mechanism.” <i>Journal of Applied Physics</i>, vol. 126, no. 11, 114105, AIP Publishing, 2019, doi:<a href=\"https://doi.org/10.1063/1.5113727\">10.1063/1.5113727</a>.","bibtex":"@article{Rüsing_Zhao_Mookherjea_2019, title={Second harmonic microscopy of poled x-cut thin film lithium niobate: Understanding the contrast mechanism}, volume={126}, DOI={<a href=\"https://doi.org/10.1063/1.5113727\">10.1063/1.5113727</a>}, number={11114105}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Rüsing, Michael and Zhao, J. and Mookherjea, S.}, year={2019} }","ieee":"M. Rüsing, J. Zhao, and S. Mookherjea, “Second harmonic microscopy of poled x-cut thin film lithium niobate: Understanding the contrast mechanism,” <i>Journal of Applied Physics</i>, vol. 126, no. 11, Art. no. 114105, 2019, doi: <a href=\"https://doi.org/10.1063/1.5113727\">10.1063/1.5113727</a>.","chicago":"Rüsing, Michael, J. Zhao, and S. Mookherjea. “Second Harmonic Microscopy of Poled X-Cut Thin Film Lithium Niobate: Understanding the Contrast Mechanism.” <i>Journal of Applied Physics</i> 126, no. 11 (2019). <a href=\"https://doi.org/10.1063/1.5113727\">https://doi.org/10.1063/1.5113727</a>.","ama":"Rüsing M, Zhao J, Mookherjea S. Second harmonic microscopy of poled x-cut thin film lithium niobate: Understanding the contrast mechanism. <i>Journal of Applied Physics</i>. 2019;126(11). doi:<a href=\"https://doi.org/10.1063/1.5113727\">10.1063/1.5113727</a>"},"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","extern":"1","article_number":"114105","user_id":"22501","_id":"47951","status":"public","type":"journal_article"},{"article_number":"103101","language":[{"iso":"eng"}],"project":[{"_id":"53","name":"TRR 142"},{"_id":"56","name":"TRR 142 - Project Area C"},{"_id":"75","name":"TRR 142 - Subproject C5"},{"_id":"54","name":"TRR 142 - Project Area A"},{"name":"TRR 142 - Subproject A5","_id":"62"}],"_id":"1327","user_id":"82901","department":[{"_id":"15"},{"_id":"230"},{"_id":"287"},{"_id":"35"},{"_id":"289"}],"status":"public","type":"journal_article","publication":"Journal of Applied Physics","title":"Efficient frequency conversion by combined photonic–plasmonic mode coupling","doi":"10.1063/1.5017010","publisher":"AIP Publishing","date_updated":"2022-01-06T06:51:31Z","date_created":"2018-03-16T08:41:10Z","author":[{"full_name":"Weber, N.","last_name":"Weber","first_name":"N."},{"first_name":"S. P.","last_name":"Hoffmann","full_name":"Hoffmann, S. P."},{"first_name":"M.","last_name":"Albert","full_name":"Albert, M."},{"full_name":"Zentgraf, Thomas","id":"30525","orcid":"0000-0002-8662-1101","last_name":"Zentgraf","first_name":"Thomas"},{"orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","id":"20798","full_name":"Meier, Cedrik","first_name":"Cedrik"}],"volume":123,"year":"2018","citation":{"ama":"Weber N, Hoffmann SP, Albert M, Zentgraf T, Meier C. Efficient frequency conversion by combined photonic–plasmonic mode coupling. <i>Journal of Applied Physics</i>. 2018;123(10). doi:<a href=\"https://doi.org/10.1063/1.5017010\">10.1063/1.5017010</a>","ieee":"N. Weber, S. P. Hoffmann, M. Albert, T. Zentgraf, and C. Meier, “Efficient frequency conversion by combined photonic–plasmonic mode coupling,” <i>Journal of Applied Physics</i>, vol. 123, no. 10, 2018.","chicago":"Weber, N., S. P. Hoffmann, M. Albert, Thomas Zentgraf, and Cedrik Meier. “Efficient Frequency Conversion by Combined Photonic–Plasmonic Mode Coupling.” <i>Journal of Applied Physics</i> 123, no. 10 (2018). <a href=\"https://doi.org/10.1063/1.5017010\">https://doi.org/10.1063/1.5017010</a>.","bibtex":"@article{Weber_Hoffmann_Albert_Zentgraf_Meier_2018, title={Efficient frequency conversion by combined photonic–plasmonic mode coupling}, volume={123}, DOI={<a href=\"https://doi.org/10.1063/1.5017010\">10.1063/1.5017010</a>}, number={10103101}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Weber, N. and Hoffmann, S. P. and Albert, M. and Zentgraf, Thomas and Meier, Cedrik}, year={2018} }","short":"N. Weber, S.P. Hoffmann, M. Albert, T. Zentgraf, C. Meier, Journal of Applied Physics 123 (2018).","mla":"Weber, N., et al. “Efficient Frequency Conversion by Combined Photonic–Plasmonic Mode Coupling.” <i>Journal of Applied Physics</i>, vol. 123, no. 10, 103101, AIP Publishing, 2018, doi:<a href=\"https://doi.org/10.1063/1.5017010\">10.1063/1.5017010</a>.","apa":"Weber, N., Hoffmann, S. P., Albert, M., Zentgraf, T., &#38; Meier, C. (2018). Efficient frequency conversion by combined photonic–plasmonic mode coupling. <i>Journal of Applied Physics</i>, <i>123</i>(10). <a href=\"https://doi.org/10.1063/1.5017010\">https://doi.org/10.1063/1.5017010</a>"},"intvolume":"       123","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"issue":"10"},{"_id":"22569","user_id":"54556","department":[{"_id":"302"}],"article_number":"171912","language":[{"iso":"eng"}],"type":"journal_article","publication":"Journal of Applied Physics","status":"public","date_updated":"2023-01-24T08:14:07Z","author":[{"full_name":"Layes, Vincent","last_name":"Layes","first_name":"Vincent"},{"first_name":"Sascha","last_name":"Monje","full_name":"Monje, Sascha"},{"last_name":"Corbella","full_name":"Corbella, Carles","first_name":"Carles"},{"full_name":"Schulz-von der Gathen, Volker","last_name":"Schulz-von der Gathen","first_name":"Volker"},{"last_name":"von Keudell","full_name":"von Keudell, Achim","first_name":"Achim"},{"first_name":"Maria Teresa","id":"54556","full_name":"de los Arcos de Pedro, Maria Teresa","last_name":"de los Arcos de Pedro"}],"date_created":"2021-07-07T09:08:54Z","title":"Composite targets in HiPIMS plasmas: Correlation of in-vacuum XPS characterization and optical plasma diagnostics","doi":"10.1063/1.4977820","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"year":"2017","citation":{"apa":"Layes, V., Monje, S., Corbella, C., Schulz-von der Gathen, V., von Keudell, A., &#38; de los Arcos de Pedro, M. T. (2017). Composite targets in HiPIMS plasmas: Correlation of in-vacuum XPS characterization and optical plasma diagnostics. <i>Journal of Applied Physics</i>, Article 171912. <a href=\"https://doi.org/10.1063/1.4977820\">https://doi.org/10.1063/1.4977820</a>","short":"V. Layes, S. Monje, C. Corbella, V. Schulz-von der Gathen, A. von Keudell, M.T. de los Arcos de Pedro, Journal of Applied Physics (2017).","bibtex":"@article{Layes_Monje_Corbella_Schulz-von der Gathen_von Keudell_de los Arcos de Pedro_2017, title={Composite targets in HiPIMS plasmas: Correlation of in-vacuum XPS characterization and optical plasma diagnostics}, DOI={<a href=\"https://doi.org/10.1063/1.4977820\">10.1063/1.4977820</a>}, number={171912}, journal={Journal of Applied Physics}, author={Layes, Vincent and Monje, Sascha and Corbella, Carles and Schulz-von der Gathen, Volker and von Keudell, Achim and de los Arcos de Pedro, Maria Teresa}, year={2017} }","mla":"Layes, Vincent, et al. “Composite Targets in HiPIMS Plasmas: Correlation of in-Vacuum XPS Characterization and Optical Plasma Diagnostics.” <i>Journal of Applied Physics</i>, 171912, 2017, doi:<a href=\"https://doi.org/10.1063/1.4977820\">10.1063/1.4977820</a>.","ama":"Layes V, Monje S, Corbella C, Schulz-von der Gathen V, von Keudell A, de los Arcos de Pedro MT. Composite targets in HiPIMS plasmas: Correlation of in-vacuum XPS characterization and optical plasma diagnostics. <i>Journal of Applied Physics</i>. Published online 2017. doi:<a href=\"https://doi.org/10.1063/1.4977820\">10.1063/1.4977820</a>","ieee":"V. Layes, S. Monje, C. Corbella, V. Schulz-von der Gathen, A. von Keudell, and M. T. de los Arcos de Pedro, “Composite targets in HiPIMS plasmas: Correlation of in-vacuum XPS characterization and optical plasma diagnostics,” <i>Journal of Applied Physics</i>, Art. no. 171912, 2017, doi: <a href=\"https://doi.org/10.1063/1.4977820\">10.1063/1.4977820</a>.","chicago":"Layes, Vincent, Sascha Monje, Carles Corbella, Volker Schulz-von der Gathen, Achim von Keudell, and Maria Teresa de los Arcos de Pedro. “Composite Targets in HiPIMS Plasmas: Correlation of in-Vacuum XPS Characterization and Optical Plasma Diagnostics.” <i>Journal of Applied Physics</i>, 2017. <a href=\"https://doi.org/10.1063/1.4977820\">https://doi.org/10.1063/1.4977820</a>."}},{"user_id":"14","_id":"4815","article_number":"103901","publication":"Journal of Applied Physics","type":"journal_article","status":"public","volume":120,"date_created":"2018-10-24T08:05:48Z","author":[{"last_name":"Righetti","full_name":"Righetti, V. A. N.","first_name":"V. A. N."},{"first_name":"X.","full_name":"Gratens, X.","last_name":"Gratens"},{"full_name":"Chitta, V. A.","last_name":"Chitta","first_name":"V. A."},{"first_name":"M. P. F.","full_name":"de Godoy, M. P. F.","last_name":"de Godoy"},{"last_name":"Rodrigues","full_name":"Rodrigues, A. D.","first_name":"A. D."},{"first_name":"E.","last_name":"Abramof","full_name":"Abramof, E."},{"last_name":"Dias","full_name":"Dias, J. F.","first_name":"J. F."},{"first_name":"D.","full_name":"Schikora, D.","last_name":"Schikora"},{"full_name":"As, Donat Josef","id":"14","orcid":"0000-0003-1121-3565","last_name":"As","first_name":"Donat Josef"},{"first_name":"K.","full_name":"Lischka, K.","last_name":"Lischka"}],"publisher":"AIP Publishing","date_updated":"2022-01-06T07:01:25Z","doi":"10.1063/1.4962275","title":"Magnetic and structural properties of Fe-implanted cubic GaN","issue":"10","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","intvolume":"       120","citation":{"ieee":"V. A. N. Righetti <i>et al.</i>, “Magnetic and structural properties of Fe-implanted cubic GaN,” <i>Journal of Applied Physics</i>, vol. 120, no. 10, 2016.","chicago":"Righetti, V. A. N., X. Gratens, V. A. Chitta, M. P. F. de Godoy, A. D. Rodrigues, E. Abramof, J. F. Dias, D. Schikora, Donat Josef As, and K. Lischka. “Magnetic and Structural Properties of Fe-Implanted Cubic GaN.” <i>Journal of Applied Physics</i> 120, no. 10 (2016). <a href=\"https://doi.org/10.1063/1.4962275\">https://doi.org/10.1063/1.4962275</a>.","ama":"Righetti VAN, Gratens X, Chitta VA, et al. Magnetic and structural properties of Fe-implanted cubic GaN. <i>Journal of Applied Physics</i>. 2016;120(10). doi:<a href=\"https://doi.org/10.1063/1.4962275\">10.1063/1.4962275</a>","apa":"Righetti, V. A. N., Gratens, X., Chitta, V. A., de Godoy, M. P. F., Rodrigues, A. D., Abramof, E., … Lischka, K. (2016). Magnetic and structural properties of Fe-implanted cubic GaN. <i>Journal of Applied Physics</i>, <i>120</i>(10). <a href=\"https://doi.org/10.1063/1.4962275\">https://doi.org/10.1063/1.4962275</a>","mla":"Righetti, V. A. N., et al. “Magnetic and Structural Properties of Fe-Implanted Cubic GaN.” <i>Journal of Applied Physics</i>, vol. 120, no. 10, 103901, AIP Publishing, 2016, doi:<a href=\"https://doi.org/10.1063/1.4962275\">10.1063/1.4962275</a>.","short":"V.A.N. Righetti, X. Gratens, V.A. Chitta, M.P.F. de Godoy, A.D. Rodrigues, E. Abramof, J.F. Dias, D. Schikora, D.J. As, K. Lischka, Journal of Applied Physics 120 (2016).","bibtex":"@article{Righetti_Gratens_Chitta_de Godoy_Rodrigues_Abramof_Dias_Schikora_As_Lischka_2016, title={Magnetic and structural properties of Fe-implanted cubic GaN}, volume={120}, DOI={<a href=\"https://doi.org/10.1063/1.4962275\">10.1063/1.4962275</a>}, number={10103901}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Righetti, V. A. N. and Gratens, X. and Chitta, V. A. and de Godoy, M. P. F. and Rodrigues, A. D. and Abramof, E. and Dias, J. F. and Schikora, D. and As, Donat Josef and Lischka, K.}, year={2016} }"},"year":"2016"},{"intvolume":"       119","citation":{"ama":"Rüsing M, Eigner C, Mackwitz P, Berth G, Silberhorn C, Zrenner A. Identification of ferroelectric domain structure sensitive phonon modes in potassium titanyl phosphate: A fundamental study. <i>Journal of Applied Physics</i>. 2016;119(4). doi:<a href=\"https://doi.org/10.1063/1.4940964\">10.1063/1.4940964</a>","ieee":"M. Rüsing, C. Eigner, P. Mackwitz, G. Berth, C. Silberhorn, and A. Zrenner, “Identification of ferroelectric domain structure sensitive phonon modes in potassium titanyl phosphate: A fundamental study,” <i>Journal of Applied Physics</i>, vol. 119, no. 4, Art. no. 044103, 2016, doi: <a href=\"https://doi.org/10.1063/1.4940964\">10.1063/1.4940964</a>.","chicago":"Rüsing, Michael, Christof Eigner, P. Mackwitz, Gerhard Berth, Christine Silberhorn, and Artur Zrenner. “Identification of Ferroelectric Domain Structure Sensitive Phonon Modes in Potassium Titanyl Phosphate: A Fundamental Study.” <i>Journal of Applied Physics</i> 119, no. 4 (2016). <a href=\"https://doi.org/10.1063/1.4940964\">https://doi.org/10.1063/1.4940964</a>.","apa":"Rüsing, M., Eigner, C., Mackwitz, P., Berth, G., Silberhorn, C., &#38; Zrenner, A. (2016). Identification of ferroelectric domain structure sensitive phonon modes in potassium titanyl phosphate: A fundamental study. <i>Journal of Applied Physics</i>, <i>119</i>(4), Article 044103. <a href=\"https://doi.org/10.1063/1.4940964\">https://doi.org/10.1063/1.4940964</a>","bibtex":"@article{Rüsing_Eigner_Mackwitz_Berth_Silberhorn_Zrenner_2016, title={Identification of ferroelectric domain structure sensitive phonon modes in potassium titanyl phosphate: A fundamental study}, volume={119}, DOI={<a href=\"https://doi.org/10.1063/1.4940964\">10.1063/1.4940964</a>}, number={4044103}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Rüsing, Michael and Eigner, Christof and Mackwitz, P. and Berth, Gerhard and Silberhorn, Christine and Zrenner, Artur}, year={2016} }","short":"M. Rüsing, C. Eigner, P. Mackwitz, G. Berth, C. Silberhorn, A. Zrenner, Journal of Applied Physics 119 (2016).","mla":"Rüsing, Michael, et al. “Identification of Ferroelectric Domain Structure Sensitive Phonon Modes in Potassium Titanyl Phosphate: A Fundamental Study.” <i>Journal of Applied Physics</i>, vol. 119, no. 4, 044103, AIP Publishing, 2016, doi:<a href=\"https://doi.org/10.1063/1.4940964\">10.1063/1.4940964</a>."},"year":"2016","issue":"4","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","doi":"10.1063/1.4940964","title":"Identification of ferroelectric domain structure sensitive phonon modes in potassium titanyl phosphate: A fundamental study","volume":119,"author":[{"first_name":"Michael","full_name":"Rüsing, Michael","id":"22501","orcid":"0000-0003-4682-4577","last_name":"Rüsing"},{"first_name":"Christof","orcid":"https://orcid.org/0000-0002-5693-3083","last_name":"Eigner","id":"13244","full_name":"Eigner, Christof"},{"first_name":"P.","last_name":"Mackwitz","full_name":"Mackwitz, P."},{"full_name":"Berth, Gerhard","id":"53","last_name":"Berth","first_name":"Gerhard"},{"full_name":"Silberhorn, Christine","id":"26263","last_name":"Silberhorn","first_name":"Christine"},{"first_name":"Artur","full_name":"Zrenner, Artur","id":"606","orcid":"0000-0002-5190-0944","last_name":"Zrenner"}],"date_created":"2018-08-29T08:21:00Z","date_updated":"2023-10-09T08:32:15Z","publisher":"AIP Publishing","status":"public","abstract":[{"text":"Confocal Raman spectroscopy is applied to identify ferroelectric domain structure sensitive\r\nphonon modes in potassium titanyl phosphate. Therefore, polarization-dependent measurements in\r\nvarious scattering configurations have been performed to characterize the fundamental Raman\r\nspectra of the material. The obtained spectra are discussed qualitatively based on an internal mode\r\nassignment. In the main part of this work, we have characterized z-cut periodically poled potassium\r\ntitanyl phosphate in terms of polarity- and structure-sensitive phonon modes. Here, we find vibrations\r\nwhose intensities are linked to the ferroelectric domain walls. We interpret this in terms of\r\nchanges in the polarizability originating from strain induced by domain boundaries and the inner\r\nfield distribution. Hence, a direct and 3D visualization of ferroelectric domain structures becomes\r\npossible in potassium titanyl phosphate.","lang":"eng"}],"publication":"Journal of Applied Physics","type":"journal_article","language":[{"iso":"eng"}],"article_number":"044103","article_type":"original","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"288"}],"user_id":"14931","_id":"4239","project":[{"grant_number":"231447078","name":"TRR 142","_id":"53"},{"_id":"55","name":"TRR 142 - Project Area B"},{"grant_number":"231447078","name":"TRR 142 - Subproject B3","_id":"68"}]},{"year":"2015","citation":{"apa":"Buß, J. H., Schupp, T., As, D. J., Hägele, D., &#38; Rudolph, J. (2015). Temperature dependence of the electron Landé g-factor in cubic GaN. <i>Journal of Applied Physics</i>, <i>118</i>(22). <a href=\"https://doi.org/10.1063/1.4937128\">https://doi.org/10.1063/1.4937128</a>","mla":"Buß, J. H., et al. “Temperature Dependence of the Electron Landé G-Factor in Cubic GaN.” <i>Journal of Applied Physics</i>, vol. 118, no. 22, 225701, AIP Publishing, 2015, doi:<a href=\"https://doi.org/10.1063/1.4937128\">10.1063/1.4937128</a>.","short":"J.H. Buß, T. Schupp, D.J. As, D. Hägele, J. Rudolph, Journal of Applied Physics 118 (2015).","bibtex":"@article{Buß_Schupp_As_Hägele_Rudolph_2015, title={Temperature dependence of the electron Landé g-factor in cubic GaN}, volume={118}, DOI={<a href=\"https://doi.org/10.1063/1.4937128\">10.1063/1.4937128</a>}, number={22225701}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Buß, J. H. and Schupp, T. and As, Donat Josef and Hägele, D. and Rudolph, J.}, year={2015} }","chicago":"Buß, J. H., T. Schupp, Donat Josef As, D. Hägele, and J. Rudolph. “Temperature Dependence of the Electron Landé G-Factor in Cubic GaN.” <i>Journal of Applied Physics</i> 118, no. 22 (2015). <a href=\"https://doi.org/10.1063/1.4937128\">https://doi.org/10.1063/1.4937128</a>.","ieee":"J. H. Buß, T. Schupp, D. J. As, D. Hägele, and J. Rudolph, “Temperature dependence of the electron Landé g-factor in cubic GaN,” <i>Journal of Applied Physics</i>, vol. 118, no. 22, 2015.","ama":"Buß JH, Schupp T, As DJ, Hägele D, Rudolph J. Temperature dependence of the electron Landé g-factor in cubic GaN. <i>Journal of Applied Physics</i>. 2015;118(22). doi:<a href=\"https://doi.org/10.1063/1.4937128\">10.1063/1.4937128</a>"},"intvolume":"       118","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"issue":"22","title":"Temperature dependence of the electron Landé g-factor in cubic GaN","doi":"10.1063/1.4937128","publisher":"AIP Publishing","date_updated":"2022-01-06T07:01:25Z","author":[{"first_name":"J. H.","last_name":"Buß","full_name":"Buß, J. H."},{"first_name":"T.","full_name":"Schupp, T.","last_name":"Schupp"},{"last_name":"As","orcid":"0000-0003-1121-3565","id":"14","full_name":"As, Donat Josef","first_name":"Donat Josef"},{"last_name":"Hägele","full_name":"Hägele, D.","first_name":"D."},{"first_name":"J.","last_name":"Rudolph","full_name":"Rudolph, J."}],"date_created":"2018-10-24T08:18:32Z","volume":118,"status":"public","type":"journal_article","publication":"Journal of Applied Physics","article_number":"225701","_id":"4820","user_id":"14"},{"article_number":"093906","_id":"4825","user_id":"14","status":"public","publication":"Journal of Applied Physics","type":"journal_article","title":"Strain dependent electron spin dynamics in bulk cubic GaN","doi":"10.1063/1.4914069","publisher":"AIP Publishing","date_updated":"2022-01-06T07:01:25Z","volume":117,"date_created":"2018-10-24T09:02:29Z","author":[{"last_name":"Schaefer","full_name":"Schaefer, A.","first_name":"A."},{"first_name":"J. H.","full_name":"Buß, J. H.","last_name":"Buß"},{"last_name":"Schupp","full_name":"Schupp, T.","first_name":"T."},{"full_name":"Zado, A.","last_name":"Zado","first_name":"A."},{"orcid":"0000-0003-1121-3565","last_name":"As","id":"14","full_name":"As, Donat Josef","first_name":"Donat Josef"},{"last_name":"Hägele","full_name":"Hägele, D.","first_name":"D."},{"full_name":"Rudolph, J.","last_name":"Rudolph","first_name":"J."}],"year":"2015","intvolume":"       117","citation":{"chicago":"Schaefer, A., J. H. Buß, T. Schupp, A. Zado, Donat Josef As, D. Hägele, and J. Rudolph. “Strain Dependent Electron Spin Dynamics in Bulk Cubic GaN.” <i>Journal of Applied Physics</i> 117, no. 9 (2015). <a href=\"https://doi.org/10.1063/1.4914069\">https://doi.org/10.1063/1.4914069</a>.","ieee":"A. Schaefer <i>et al.</i>, “Strain dependent electron spin dynamics in bulk cubic GaN,” <i>Journal of Applied Physics</i>, vol. 117, no. 9, 2015.","ama":"Schaefer A, Buß JH, Schupp T, et al. Strain dependent electron spin dynamics in bulk cubic GaN. <i>Journal of Applied Physics</i>. 2015;117(9). doi:<a href=\"https://doi.org/10.1063/1.4914069\">10.1063/1.4914069</a>","bibtex":"@article{Schaefer_Buß_Schupp_Zado_As_Hägele_Rudolph_2015, title={Strain dependent electron spin dynamics in bulk cubic GaN}, volume={117}, DOI={<a href=\"https://doi.org/10.1063/1.4914069\">10.1063/1.4914069</a>}, number={9093906}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Schaefer, A. and Buß, J. H. and Schupp, T. and Zado, A. and As, Donat Josef and Hägele, D. and Rudolph, J.}, year={2015} }","short":"A. Schaefer, J.H. Buß, T. Schupp, A. Zado, D.J. As, D. Hägele, J. Rudolph, Journal of Applied Physics 117 (2015).","mla":"Schaefer, A., et al. “Strain Dependent Electron Spin Dynamics in Bulk Cubic GaN.” <i>Journal of Applied Physics</i>, vol. 117, no. 9, 093906, AIP Publishing, 2015, doi:<a href=\"https://doi.org/10.1063/1.4914069\">10.1063/1.4914069</a>.","apa":"Schaefer, A., Buß, J. H., Schupp, T., Zado, A., As, D. J., Hägele, D., &#38; Rudolph, J. (2015). Strain dependent electron spin dynamics in bulk cubic GaN. <i>Journal of Applied Physics</i>, <i>117</i>(9). <a href=\"https://doi.org/10.1063/1.4914069\">https://doi.org/10.1063/1.4914069</a>"},"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","issue":"9"},{"year":"2015","intvolume":"       118","citation":{"ama":"Bader CA, Zeuner F, Bader MHW, Zentgraf T, Meier C. Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators. <i>Journal of Applied Physics</i>. 2015;118(21). doi:<a href=\"https://doi.org/10.1063/1.4936768\">10.1063/1.4936768</a>","chicago":"Bader, Christina A., Franziska Zeuner, Manuel H. W. Bader, Thomas Zentgraf, and Cedrik Meier. “Nonlinear Optical Sub-Bandgap Excitation of ZnO-Based Photonic Resonators.” <i>Journal of Applied Physics</i> 118, no. 21 (2015). <a href=\"https://doi.org/10.1063/1.4936768\">https://doi.org/10.1063/1.4936768</a>.","ieee":"C. A. Bader, F. Zeuner, M. H. W. Bader, T. Zentgraf, and C. Meier, “Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators,” <i>Journal of Applied Physics</i>, vol. 118, no. 21, 2015.","apa":"Bader, C. A., Zeuner, F., Bader, M. H. W., Zentgraf, T., &#38; Meier, C. (2015). Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators. <i>Journal of Applied Physics</i>, <i>118</i>(21). <a href=\"https://doi.org/10.1063/1.4936768\">https://doi.org/10.1063/1.4936768</a>","short":"C.A. Bader, F. Zeuner, M.H.W. Bader, T. Zentgraf, C. Meier, Journal of Applied Physics 118 (2015).","bibtex":"@article{Bader_Zeuner_Bader_Zentgraf_Meier_2015, title={Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators}, volume={118}, DOI={<a href=\"https://doi.org/10.1063/1.4936768\">10.1063/1.4936768</a>}, number={21213105}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Bader, Christina A. and Zeuner, Franziska and Bader, Manuel H. W. and Zentgraf, Thomas and Meier, Cedrik}, year={2015} }","mla":"Bader, Christina A., et al. “Nonlinear Optical Sub-Bandgap Excitation of ZnO-Based Photonic Resonators.” <i>Journal of Applied Physics</i>, vol. 118, no. 21, 213105, AIP Publishing, 2015, doi:<a href=\"https://doi.org/10.1063/1.4936768\">10.1063/1.4936768</a>."},"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","issue":"21","title":"Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators","doi":"10.1063/1.4936768","publisher":"AIP Publishing","date_updated":"2022-01-06T06:53:00Z","volume":118,"date_created":"2018-03-22T18:33:32Z","author":[{"full_name":"Bader, Christina A.","last_name":"Bader","first_name":"Christina A."},{"last_name":"Zeuner","full_name":"Zeuner, Franziska","first_name":"Franziska"},{"first_name":"Manuel H. W.","last_name":"Bader","full_name":"Bader, Manuel H. W."},{"first_name":"Thomas","full_name":"Zentgraf, Thomas","id":"30525","orcid":"0000-0002-8662-1101","last_name":"Zentgraf"},{"id":"20798","full_name":"Meier, Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","first_name":"Cedrik"}],"status":"public","publication":"Journal of Applied Physics","type":"journal_article","article_number":"213105","language":[{"iso":"eng"}],"_id":"1696","project":[{"_id":"53","name":"TRR 142"},{"_id":"54","name":"TRR 142 - Project Area A"},{"name":"TRR 142 - Subproject A5","_id":"62"}],"department":[{"_id":"15"},{"_id":"230"},{"_id":"287"},{"_id":"289"},{"_id":"35"}],"user_id":"20798"},{"author":[{"full_name":"Lo, Fang-Yuh","last_name":"Lo","first_name":"Fang-Yuh"},{"first_name":"Cheng-De","last_name":"Huang","full_name":"Huang, Cheng-De"},{"first_name":"Kai-Chieh","full_name":"Chou, Kai-Chieh","last_name":"Chou"},{"first_name":"Jhong-Yu","last_name":"Guo","full_name":"Guo, Jhong-Yu"},{"first_name":"Hsiang-Lin","full_name":"Liu, Hsiang-Lin","last_name":"Liu"},{"full_name":"Ney, Verena","last_name":"Ney","first_name":"Verena"},{"first_name":"Andreas","last_name":"Ney","full_name":"Ney, Andreas"},{"first_name":"Stepan","last_name":"Shvarkov","full_name":"Shvarkov, Stepan"},{"first_name":"Sébastien","last_name":"Pezzagna","full_name":"Pezzagna, Sébastien"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"first_name":"Chi-Ta","last_name":"Chia","full_name":"Chia, Chi-Ta"},{"full_name":"Chern, Ming-Yau","last_name":"Chern","first_name":"Ming-Yau"},{"full_name":"Wieck, Andreas D.","last_name":"Wieck","first_name":"Andreas D."},{"last_name":"Massies","full_name":"Massies, Jean","first_name":"Jean"}],"date_created":"2019-01-29T12:36:40Z","volume":116,"publisher":"AIP Publishing","date_updated":"2022-01-06T07:03:30Z","doi":"10.1063/1.4891226","title":"Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films","issue":"4","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"citation":{"chicago":"Lo, Fang-Yuh, Cheng-De Huang, Kai-Chieh Chou, Jhong-Yu Guo, Hsiang-Lin Liu, Verena Ney, Andreas Ney, et al. “Structural, Optical, and Magnetic Properties of Highly-Resistive Sm-Implanted GaN Thin Films.” <i>Journal of Applied Physics</i> 116, no. 4 (2014). <a href=\"https://doi.org/10.1063/1.4891226\">https://doi.org/10.1063/1.4891226</a>.","ieee":"F.-Y. Lo <i>et al.</i>, “Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films,” <i>Journal of Applied Physics</i>, vol. 116, no. 4, 2014.","ama":"Lo F-Y, Huang C-D, Chou K-C, et al. Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films. <i>Journal of Applied Physics</i>. 2014;116(4). doi:<a href=\"https://doi.org/10.1063/1.4891226\">10.1063/1.4891226</a>","apa":"Lo, F.-Y., Huang, C.-D., Chou, K.-C., Guo, J.-Y., Liu, H.-L., Ney, V., … Massies, J. (2014). Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films. <i>Journal of Applied Physics</i>, <i>116</i>(4). <a href=\"https://doi.org/10.1063/1.4891226\">https://doi.org/10.1063/1.4891226</a>","bibtex":"@article{Lo_Huang_Chou_Guo_Liu_Ney_Ney_Shvarkov_Pezzagna_Reuter_et al._2014, title={Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films}, volume={116}, DOI={<a href=\"https://doi.org/10.1063/1.4891226\">10.1063/1.4891226</a>}, number={4043909}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Lo, Fang-Yuh and Huang, Cheng-De and Chou, Kai-Chieh and Guo, Jhong-Yu and Liu, Hsiang-Lin and Ney, Verena and Ney, Andreas and Shvarkov, Stepan and Pezzagna, Sébastien and Reuter, Dirk and et al.}, year={2014} }","short":"F.-Y. Lo, C.-D. Huang, K.-C. Chou, J.-Y. Guo, H.-L. Liu, V. Ney, A. Ney, S. Shvarkov, S. Pezzagna, D. Reuter, C.-T. Chia, M.-Y. Chern, A.D. Wieck, J. Massies, Journal of Applied Physics 116 (2014).","mla":"Lo, Fang-Yuh, et al. “Structural, Optical, and Magnetic Properties of Highly-Resistive Sm-Implanted GaN Thin Films.” <i>Journal of Applied Physics</i>, vol. 116, no. 4, 043909, AIP Publishing, 2014, doi:<a href=\"https://doi.org/10.1063/1.4891226\">10.1063/1.4891226</a>."},"intvolume":"       116","year":"2014","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"7232","language":[{"iso":"eng"}],"article_number":"043909","type":"journal_article","publication":"Journal of Applied Physics","status":"public"},{"doi":"10.1063/1.4792747","title":"Oxygen diffusivity in silicon derived from dynamical X-ray diffraction","author":[{"first_name":"J.","full_name":"Will, J.","last_name":"Will"},{"first_name":"A.","full_name":"Gröschel, A.","last_name":"Gröschel"},{"first_name":"D.","last_name":"Kot","full_name":"Kot, D."},{"last_name":"Schubert","full_name":"Schubert, M. A.","first_name":"M. A."},{"last_name":"Bergmann","full_name":"Bergmann, C.","first_name":"C."},{"orcid":"0000-0001-6373-0877","last_name":"Steinrück","id":"84268","full_name":"Steinrück, Hans-Georg","first_name":"Hans-Georg"},{"full_name":"Kissinger, G.","last_name":"Kissinger","first_name":"G."},{"first_name":"A.","last_name":"Magerl","full_name":"Magerl, A."}],"date_created":"2021-09-01T09:49:28Z","volume":7,"date_updated":"2022-01-06T06:55:57Z","citation":{"ieee":"J. Will <i>et al.</i>, “Oxygen diffusivity in silicon derived from dynamical X-ray diffraction,” <i>Journal of Applied Physics</i>, vol. 7, p. 073508, 2013, doi: <a href=\"https://doi.org/10.1063/1.4792747\">10.1063/1.4792747</a>.","chicago":"Will, J., A. Gröschel, D. Kot, M. A. Schubert, C. Bergmann, Hans-Georg Steinrück, G. Kissinger, and A. Magerl. “Oxygen Diffusivity in Silicon Derived from Dynamical X-Ray Diffraction.” <i>Journal of Applied Physics</i> 7 (2013): 073508. <a href=\"https://doi.org/10.1063/1.4792747\">https://doi.org/10.1063/1.4792747</a>.","ama":"Will J, Gröschel A, Kot D, et al. Oxygen diffusivity in silicon derived from dynamical X-ray diffraction. <i>Journal of Applied Physics</i>. 2013;7:073508. doi:<a href=\"https://doi.org/10.1063/1.4792747\">10.1063/1.4792747</a>","bibtex":"@article{Will_Gröschel_Kot_Schubert_Bergmann_Steinrück_Kissinger_Magerl_2013, title={Oxygen diffusivity in silicon derived from dynamical X-ray diffraction}, volume={7}, DOI={<a href=\"https://doi.org/10.1063/1.4792747\">10.1063/1.4792747</a>}, journal={Journal of Applied Physics}, author={Will, J. and Gröschel, A. and Kot, D. and Schubert, M. A. and Bergmann, C. and Steinrück, Hans-Georg and Kissinger, G. and Magerl, A.}, year={2013}, pages={073508} }","short":"J. Will, A. Gröschel, D. Kot, M.A. Schubert, C. Bergmann, H.-G. Steinrück, G. Kissinger, A. Magerl, Journal of Applied Physics 7 (2013) 073508.","mla":"Will, J., et al. “Oxygen Diffusivity in Silicon Derived from Dynamical X-Ray Diffraction.” <i>Journal of Applied Physics</i>, vol. 7, 2013, p. 073508, doi:<a href=\"https://doi.org/10.1063/1.4792747\">10.1063/1.4792747</a>.","apa":"Will, J., Gröschel, A., Kot, D., Schubert, M. A., Bergmann, C., Steinrück, H.-G., Kissinger, G., &#38; Magerl, A. (2013). Oxygen diffusivity in silicon derived from dynamical X-ray diffraction. <i>Journal of Applied Physics</i>, <i>7</i>, 073508. <a href=\"https://doi.org/10.1063/1.4792747\">https://doi.org/10.1063/1.4792747</a>"},"page":"073508","intvolume":"         7","year":"2013","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"language":[{"iso":"eng"}],"user_id":"84268","department":[{"_id":"633"}],"_id":"23643","status":"public","type":"journal_article","publication":"Journal of Applied Physics"},{"title":"Hysteresis and memory factor of the Kerr effect in blue phases","doi":"10.1063/1.4828477","date_updated":"2023-01-24T18:31:34Z","publisher":"AIP Publishing","author":[{"last_name":"Nordendorf","full_name":"Nordendorf, Gaby","first_name":"Gaby"},{"first_name":"Alexander","full_name":"Lorenz, Alexander","last_name":"Lorenz"},{"first_name":"Andreas","full_name":"Hoischen, Andreas","last_name":"Hoischen"},{"first_name":"Jürgen","last_name":"Schmidtke","full_name":"Schmidtke, Jürgen"},{"full_name":"Kitzerow, Heinz-Siegfried","id":"254","last_name":"Kitzerow","first_name":"Heinz-Siegfried"},{"first_name":"David","full_name":"Wilkes, David","last_name":"Wilkes"},{"full_name":"Wittek, Michael","last_name":"Wittek","first_name":"Michael"}],"date_created":"2023-01-24T18:31:09Z","volume":114,"year":"2013","citation":{"short":"G. Nordendorf, A. Lorenz, A. Hoischen, J. Schmidtke, H.-S. Kitzerow, D. Wilkes, M. Wittek, Journal of Applied Physics 114 (2013).","bibtex":"@article{Nordendorf_Lorenz_Hoischen_Schmidtke_Kitzerow_Wilkes_Wittek_2013, title={Hysteresis and memory factor of the Kerr effect in blue phases}, volume={114}, DOI={<a href=\"https://doi.org/10.1063/1.4828477\">10.1063/1.4828477</a>}, number={17173104}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Nordendorf, Gaby and Lorenz, Alexander and Hoischen, Andreas and Schmidtke, Jürgen and Kitzerow, Heinz-Siegfried and Wilkes, David and Wittek, Michael}, year={2013} }","mla":"Nordendorf, Gaby, et al. “Hysteresis and Memory Factor of the Kerr Effect in Blue Phases.” <i>Journal of Applied Physics</i>, vol. 114, no. 17, 173104, AIP Publishing, 2013, doi:<a href=\"https://doi.org/10.1063/1.4828477\">10.1063/1.4828477</a>.","apa":"Nordendorf, G., Lorenz, A., Hoischen, A., Schmidtke, J., Kitzerow, H.-S., Wilkes, D., &#38; Wittek, M. (2013). Hysteresis and memory factor of the Kerr effect in blue phases. <i>Journal of Applied Physics</i>, <i>114</i>(17), Article 173104. <a href=\"https://doi.org/10.1063/1.4828477\">https://doi.org/10.1063/1.4828477</a>","ama":"Nordendorf G, Lorenz A, Hoischen A, et al. Hysteresis and memory factor of the Kerr effect in blue phases. <i>Journal of Applied Physics</i>. 2013;114(17). doi:<a href=\"https://doi.org/10.1063/1.4828477\">10.1063/1.4828477</a>","chicago":"Nordendorf, Gaby, Alexander Lorenz, Andreas Hoischen, Jürgen Schmidtke, Heinz-Siegfried Kitzerow, David Wilkes, and Michael Wittek. “Hysteresis and Memory Factor of the Kerr Effect in Blue Phases.” <i>Journal of Applied Physics</i> 114, no. 17 (2013). <a href=\"https://doi.org/10.1063/1.4828477\">https://doi.org/10.1063/1.4828477</a>.","ieee":"G. Nordendorf <i>et al.</i>, “Hysteresis and memory factor of the Kerr effect in blue phases,” <i>Journal of Applied Physics</i>, vol. 114, no. 17, Art. no. 173104, 2013, doi: <a href=\"https://doi.org/10.1063/1.4828477\">10.1063/1.4828477</a>."},"intvolume":"       114","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"issue":"17","article_number":"173104","keyword":["General Physics and Astronomy"],"language":[{"iso":"eng"}],"_id":"39715","user_id":"254","department":[{"_id":"313"},{"_id":"230"},{"_id":"638"}],"status":"public","type":"journal_article","publication":"Journal of Applied Physics"},{"_id":"22603","department":[{"_id":"302"}],"user_id":"54556","article_number":"103306","language":[{"iso":"eng"}],"extern":"1","publication":"Journal of Applied Physics","type":"journal_article","status":"public","date_updated":"2023-01-24T08:25:58Z","author":[{"last_name":"Prenzel","full_name":"Prenzel, Marina","first_name":"Marina"},{"first_name":"Maria Teresa","full_name":"de los Arcos de Pedro, Maria Teresa","id":"54556","last_name":"de los Arcos de Pedro"},{"full_name":"Kortmann, Annika","last_name":"Kortmann","first_name":"Annika"},{"first_name":"Jörg","last_name":"Winter","full_name":"Winter, Jörg"},{"last_name":"von Keudell","full_name":"von Keudell, Achim","first_name":"Achim"}],"date_created":"2021-07-07T11:30:38Z","title":"Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films","doi":"10.1063/1.4767383","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","year":"2012","citation":{"apa":"Prenzel, M., de los Arcos de Pedro, M. T., Kortmann, A., Winter, J., &#38; von Keudell, A. (2012). Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films. <i>Journal of Applied Physics</i>, Article 103306. <a href=\"https://doi.org/10.1063/1.4767383\">https://doi.org/10.1063/1.4767383</a>","mla":"Prenzel, Marina, et al. “Embedded Argon as a Tool for Sampling Local Structure in Thin Plasma Deposited Aluminum Oxide Films.” <i>Journal of Applied Physics</i>, 103306, 2012, doi:<a href=\"https://doi.org/10.1063/1.4767383\">10.1063/1.4767383</a>.","short":"M. Prenzel, M.T. de los Arcos de Pedro, A. Kortmann, J. Winter, A. von Keudell, Journal of Applied Physics (2012).","bibtex":"@article{Prenzel_de los Arcos de Pedro_Kortmann_Winter_von Keudell_2012, title={Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films}, DOI={<a href=\"https://doi.org/10.1063/1.4767383\">10.1063/1.4767383</a>}, number={103306}, journal={Journal of Applied Physics}, author={Prenzel, Marina and de los Arcos de Pedro, Maria Teresa and Kortmann, Annika and Winter, Jörg and von Keudell, Achim}, year={2012} }","chicago":"Prenzel, Marina, Maria Teresa de los Arcos de Pedro, Annika Kortmann, Jörg Winter, and Achim von Keudell. “Embedded Argon as a Tool for Sampling Local Structure in Thin Plasma Deposited Aluminum Oxide Films.” <i>Journal of Applied Physics</i>, 2012. <a href=\"https://doi.org/10.1063/1.4767383\">https://doi.org/10.1063/1.4767383</a>.","ieee":"M. Prenzel, M. T. de los Arcos de Pedro, A. Kortmann, J. Winter, and A. von Keudell, “Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films,” <i>Journal of Applied Physics</i>, Art. no. 103306, 2012, doi: <a href=\"https://doi.org/10.1063/1.4767383\">10.1063/1.4767383</a>.","ama":"Prenzel M, de los Arcos de Pedro MT, Kortmann A, Winter J, von Keudell A. Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films. <i>Journal of Applied Physics</i>. Published online 2012. doi:<a href=\"https://doi.org/10.1063/1.4767383\">10.1063/1.4767383</a>"}},{"citation":{"bibtex":"@article{Chen_Huang_Ludwig_Reuter_Wieck_Bacher_2011, title={Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil}, volume={109}, DOI={<a href=\"https://doi.org/10.1063/1.3530731\">10.1063/1.3530731</a>}, number={1016106}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Chen, Y. S. and Huang, J. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Bacher, G.}, year={2011} }","short":"Y.S. Chen, J. Huang, A. Ludwig, D. Reuter, A.D. Wieck, G. Bacher, Journal of Applied Physics 109 (2011).","mla":"Chen, Y. S., et al. “Manipulation of Nuclear Spin Dynamics in N-GaAs Using an on-Chip Microcoil.” <i>Journal of Applied Physics</i>, vol. 109, no. 1, 016106, AIP Publishing, 2011, doi:<a href=\"https://doi.org/10.1063/1.3530731\">10.1063/1.3530731</a>.","apa":"Chen, Y. S., Huang, J., Ludwig, A., Reuter, D., Wieck, A. D., &#38; Bacher, G. (2011). Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil. <i>Journal of Applied Physics</i>, <i>109</i>(1). <a href=\"https://doi.org/10.1063/1.3530731\">https://doi.org/10.1063/1.3530731</a>","ieee":"Y. S. Chen, J. Huang, A. Ludwig, D. Reuter, A. D. Wieck, and G. Bacher, “Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil,” <i>Journal of Applied Physics</i>, vol. 109, no. 1, 2011.","chicago":"Chen, Y. S., J. Huang, A. Ludwig, Dirk Reuter, A. D. Wieck, and G. Bacher. “Manipulation of Nuclear Spin Dynamics in N-GaAs Using an on-Chip Microcoil.” <i>Journal of Applied Physics</i> 109, no. 1 (2011). <a href=\"https://doi.org/10.1063/1.3530731\">https://doi.org/10.1063/1.3530731</a>.","ama":"Chen YS, Huang J, Ludwig A, Reuter D, Wieck AD, Bacher G. Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil. <i>Journal of Applied Physics</i>. 2011;109(1). doi:<a href=\"https://doi.org/10.1063/1.3530731\">10.1063/1.3530731</a>"},"intvolume":"       109","year":"2011","issue":"1","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"doi":"10.1063/1.3530731","title":"Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil","date_created":"2019-02-14T10:41:44Z","author":[{"full_name":"Chen, Y. S.","last_name":"Chen","first_name":"Y. S."},{"first_name":"J.","last_name":"Huang","full_name":"Huang, J."},{"last_name":"Ludwig","full_name":"Ludwig, A.","first_name":"A."},{"first_name":"Dirk","id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter"},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"},{"first_name":"G.","last_name":"Bacher","full_name":"Bacher, G."}],"volume":109,"date_updated":"2022-01-06T07:03:45Z","publisher":"AIP Publishing","status":"public","type":"journal_article","publication":"Journal of Applied Physics","language":[{"iso":"eng"}],"article_number":"016106","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"7719"},{"intvolume":"       110","citation":{"chicago":"Maria Kemper, Ricarda, Thorsten Schupp, Maik Häberlen, Thomas Niendorf, Hans-Jürgen Maier, Anja Dempewolf, Frank Bertram, et al. “Anti-Phase Domains in Cubic GaN.” <i>Journal of Applied Physics</i> 110, no. 12 (2011). <a href=\"https://doi.org/10.1063/1.3666050\">https://doi.org/10.1063/1.3666050</a>.","ieee":"R. Maria Kemper <i>et al.</i>, “Anti-phase domains in cubic GaN,” <i>Journal of Applied Physics</i>, vol. 110, no. 12, Art. no. 123512, 2011, doi: <a href=\"https://doi.org/10.1063/1.3666050\">10.1063/1.3666050</a>.","ama":"Maria Kemper R, Schupp T, Häberlen M, et al. Anti-phase domains in cubic GaN. <i>Journal of Applied Physics</i>. 2011;110(12). doi:<a href=\"https://doi.org/10.1063/1.3666050\">10.1063/1.3666050</a>","apa":"Maria Kemper, R., Schupp, T., Häberlen, M., Niendorf, T., Maier, H.-J., Dempewolf, A., Bertram, F., Christen, J., Kirste, R., Hoffmann, A., Lindner, J., &#38; As, D. (2011). Anti-phase domains in cubic GaN. <i>Journal of Applied Physics</i>, <i>110</i>(12), Article 123512. <a href=\"https://doi.org/10.1063/1.3666050\">https://doi.org/10.1063/1.3666050</a>","mla":"Maria Kemper, Ricarda, et al. “Anti-Phase Domains in Cubic GaN.” <i>Journal of Applied Physics</i>, vol. 110, no. 12, 123512, AIP Publishing, 2011, doi:<a href=\"https://doi.org/10.1063/1.3666050\">10.1063/1.3666050</a>.","short":"R. Maria Kemper, T. Schupp, M. Häberlen, T. Niendorf, H.-J. Maier, A. Dempewolf, F. Bertram, J. Christen, R. Kirste, A. Hoffmann, J. Lindner, D. As, Journal of Applied Physics 110 (2011).","bibtex":"@article{Maria Kemper_Schupp_Häberlen_Niendorf_Maier_Dempewolf_Bertram_Christen_Kirste_Hoffmann_et al._2011, title={Anti-phase domains in cubic GaN}, volume={110}, DOI={<a href=\"https://doi.org/10.1063/1.3666050\">10.1063/1.3666050</a>}, number={12123512}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Maria Kemper, Ricarda and Schupp, Thorsten and Häberlen, Maik and Niendorf, Thomas and Maier, Hans-Jürgen and Dempewolf, Anja and Bertram, Frank and Christen, Jürgen and Kirste, Ronny and Hoffmann, Axel and et al.}, year={2011} }"},"has_accepted_license":"1","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","doi":"10.1063/1.3666050","date_updated":"2023-10-09T09:10:50Z","volume":110,"author":[{"first_name":"Ricarda","last_name":"Maria Kemper","full_name":"Maria Kemper, Ricarda"},{"first_name":"Thorsten","full_name":"Schupp, Thorsten","last_name":"Schupp"},{"first_name":"Maik","full_name":"Häberlen, Maik","last_name":"Häberlen"},{"last_name":"Niendorf","full_name":"Niendorf, Thomas","first_name":"Thomas"},{"full_name":"Maier, Hans-Jürgen","last_name":"Maier","first_name":"Hans-Jürgen"},{"last_name":"Dempewolf","full_name":"Dempewolf, Anja","first_name":"Anja"},{"full_name":"Bertram, Frank","last_name":"Bertram","first_name":"Frank"},{"first_name":"Jürgen","last_name":"Christen","full_name":"Christen, Jürgen"},{"full_name":"Kirste, Ronny","last_name":"Kirste","first_name":"Ronny"},{"full_name":"Hoffmann, Axel","last_name":"Hoffmann","first_name":"Axel"},{"first_name":"Jörg","id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner"},{"first_name":"Donat","id":"14","full_name":"As, Donat","orcid":"0000-0003-1121-3565","last_name":"As"}],"status":"public","type":"journal_article","article_number":"123512","article_type":"original","file_date_updated":"2018-08-27T12:42:38Z","_id":"4146","department":[{"_id":"15"},{"_id":"286"}],"user_id":"14931","year":"2011","issue":"12","title":"Anti-phase domains in cubic GaN","publisher":"AIP Publishing","date_created":"2018-08-27T12:40:30Z","abstract":[{"lang":"eng","text":"The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {111} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, μ-Raman and cathodoluminescence spectroscopy."}],"file":[{"content_type":"application/pdf","relation":"main_file","success":1,"creator":"hclaudia","date_created":"2018-08-27T12:42:38Z","date_updated":"2018-08-27T12:42:38Z","file_id":"4147","file_name":"Anti-phase domains in cubic GaN.pdf","access_level":"closed","file_size":3305430}],"publication":"Journal of Applied Physics","ddc":["530"],"language":[{"iso":"eng"}]}]
