[{"file_date_updated":"2018-08-27T12:42:38Z","citation":{"short":"R. Maria Kemper, T. Schupp, M. Häberlen, T. Niendorf, H.-J. Maier, A. Dempewolf, F. Bertram, J. Christen, R. Kirste, A. Hoffmann, J. Lindner, D. As, Journal of Applied Physics 110 (2011).","chicago":"Maria Kemper, Ricarda, Thorsten Schupp, Maik Häberlen, Thomas Niendorf, Hans-Jürgen Maier, Anja Dempewolf, Frank Bertram, et al. “Anti-Phase Domains in Cubic GaN.” <i>Journal of Applied Physics</i> 110, no. 12 (2011). <a href=\"https://doi.org/10.1063/1.3666050\">https://doi.org/10.1063/1.3666050</a>.","apa":"Maria Kemper, R., Schupp, T., Häberlen, M., Niendorf, T., Maier, H.-J., Dempewolf, A., Bertram, F., Christen, J., Kirste, R., Hoffmann, A., Lindner, J., &#38; As, D. (2011). Anti-phase domains in cubic GaN. <i>Journal of Applied Physics</i>, <i>110</i>(12), Article 123512. <a href=\"https://doi.org/10.1063/1.3666050\">https://doi.org/10.1063/1.3666050</a>","ieee":"R. Maria Kemper <i>et al.</i>, “Anti-phase domains in cubic GaN,” <i>Journal of Applied Physics</i>, vol. 110, no. 12, Art. no. 123512, 2011, doi: <a href=\"https://doi.org/10.1063/1.3666050\">10.1063/1.3666050</a>.","ama":"Maria Kemper R, Schupp T, Häberlen M, et al. Anti-phase domains in cubic GaN. <i>Journal of Applied Physics</i>. 2011;110(12). doi:<a href=\"https://doi.org/10.1063/1.3666050\">10.1063/1.3666050</a>","bibtex":"@article{Maria Kemper_Schupp_Häberlen_Niendorf_Maier_Dempewolf_Bertram_Christen_Kirste_Hoffmann_et al._2011, title={Anti-phase domains in cubic GaN}, volume={110}, DOI={<a href=\"https://doi.org/10.1063/1.3666050\">10.1063/1.3666050</a>}, number={12123512}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Maria Kemper, Ricarda and Schupp, Thorsten and Häberlen, Maik and Niendorf, Thomas and Maier, Hans-Jürgen and Dempewolf, Anja and Bertram, Frank and Christen, Jürgen and Kirste, Ronny and Hoffmann, Axel and et al.}, year={2011} }","mla":"Maria Kemper, Ricarda, et al. “Anti-Phase Domains in Cubic GaN.” <i>Journal of Applied Physics</i>, vol. 110, no. 12, 123512, AIP Publishing, 2011, doi:<a href=\"https://doi.org/10.1063/1.3666050\">10.1063/1.3666050</a>."},"status":"public","has_accepted_license":"1","_id":"4146","publisher":"AIP Publishing","ddc":["530"],"user_id":"14931","volume":110,"publication":"Journal of Applied Physics","issue":"12","abstract":[{"lang":"eng","text":"The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {111} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, μ-Raman and cathodoluminescence spectroscopy."}],"file":[{"file_id":"4147","content_type":"application/pdf","success":1,"relation":"main_file","date_updated":"2018-08-27T12:42:38Z","file_name":"Anti-phase domains in cubic GaN.pdf","access_level":"closed","file_size":3305430,"date_created":"2018-08-27T12:42:38Z","creator":"hclaudia"}],"date_created":"2018-08-27T12:40:30Z","type":"journal_article","department":[{"_id":"15"},{"_id":"286"}],"year":"2011","title":"Anti-phase domains in cubic GaN","publication_identifier":{"issn":["0021-8979","1089-7550"]},"author":[{"full_name":"Maria Kemper, Ricarda","first_name":"Ricarda","last_name":"Maria Kemper"},{"first_name":"Thorsten","last_name":"Schupp","full_name":"Schupp, Thorsten"},{"full_name":"Häberlen, Maik","last_name":"Häberlen","first_name":"Maik"},{"full_name":"Niendorf, Thomas","last_name":"Niendorf","first_name":"Thomas"},{"full_name":"Maier, Hans-Jürgen","first_name":"Hans-Jürgen","last_name":"Maier"},{"last_name":"Dempewolf","first_name":"Anja","full_name":"Dempewolf, Anja"},{"first_name":"Frank","last_name":"Bertram","full_name":"Bertram, Frank"},{"first_name":"Jürgen","last_name":"Christen","full_name":"Christen, Jürgen"},{"last_name":"Kirste","first_name":"Ronny","full_name":"Kirste, Ronny"},{"full_name":"Hoffmann, Axel","last_name":"Hoffmann","first_name":"Axel"},{"id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg"},{"full_name":"As, Donat","last_name":"As","orcid":"0000-0003-1121-3565","first_name":"Donat","id":"14"}],"date_updated":"2023-10-09T09:10:50Z","publication_status":"published","intvolume":"       110","article_type":"original","article_number":"123512","language":[{"iso":"eng"}],"doi":"10.1063/1.3666050"},{"status":"public","publisher":"AIP Publishing","_id":"7985","user_id":"42514","volume":108,"citation":{"chicago":"Schuster, E., R. A. Brand, F. Stromberg, A. Ludwig, Dirk Reuter, A. D. Wieck, S. Hövel, et al. “Epitaxial Growth and Interfacial Magnetism of Spin Aligner for Remanent Spin Injection: [Fe/Tb]n/Fe/MgO/GaAs-Light Emitting Diode as a Prototype System.” <i>Journal of Applied Physics</i> 108, no. 6 (2010). <a href=\"https://doi.org/10.1063/1.3476265\">https://doi.org/10.1063/1.3476265</a>.","short":"E. Schuster, R.A. Brand, F. Stromberg, A. Ludwig, D. Reuter, A.D. Wieck, S. Hövel, N.C. Gerhardt, M.R. Hofmann, H. Wende, W. Keune, Journal of Applied Physics 108 (2010).","ieee":"E. Schuster <i>et al.</i>, “Epitaxial growth and interfacial magnetism of spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype system,” <i>Journal of Applied Physics</i>, vol. 108, no. 6, 2010.","apa":"Schuster, E., Brand, R. A., Stromberg, F., Ludwig, A., Reuter, D., Wieck, A. D., … Keune, W. (2010). Epitaxial growth and interfacial magnetism of spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype system. <i>Journal of Applied Physics</i>, <i>108</i>(6). <a href=\"https://doi.org/10.1063/1.3476265\">https://doi.org/10.1063/1.3476265</a>","bibtex":"@article{Schuster_Brand_Stromberg_Ludwig_Reuter_Wieck_Hövel_Gerhardt_Hofmann_Wende_et al._2010, title={Epitaxial growth and interfacial magnetism of spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype system}, volume={108}, DOI={<a href=\"https://doi.org/10.1063/1.3476265\">10.1063/1.3476265</a>}, number={6063902}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Schuster, E. and Brand, R. A. and Stromberg, F. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Wende, H. and et al.}, year={2010} }","ama":"Schuster E, Brand RA, Stromberg F, et al. Epitaxial growth and interfacial magnetism of spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype system. <i>Journal of Applied Physics</i>. 2010;108(6). doi:<a href=\"https://doi.org/10.1063/1.3476265\">10.1063/1.3476265</a>","mla":"Schuster, E., et al. “Epitaxial Growth and Interfacial Magnetism of Spin Aligner for Remanent Spin Injection: [Fe/Tb]n/Fe/MgO/GaAs-Light Emitting Diode as a Prototype System.” <i>Journal of Applied Physics</i>, vol. 108, no. 6, 063902, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3476265\">10.1063/1.3476265</a>."},"year":"2010","title":"Epitaxial growth and interfacial magnetism of spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype system","author":[{"full_name":"Schuster, E.","last_name":"Schuster","first_name":"E."},{"full_name":"Brand, R. A.","last_name":"Brand","first_name":"R. A."},{"last_name":"Stromberg","first_name":"F.","full_name":"Stromberg, F."},{"last_name":"Ludwig","first_name":"A.","full_name":"Ludwig, A."},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."},{"full_name":"Hövel, S.","last_name":"Hövel","first_name":"S."},{"full_name":"Gerhardt, N. C.","last_name":"Gerhardt","first_name":"N. C."},{"full_name":"Hofmann, M. R.","last_name":"Hofmann","first_name":"M. R."},{"full_name":"Wende, H.","last_name":"Wende","first_name":"H."},{"full_name":"Keune, W.","last_name":"Keune","first_name":"W."}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","date_updated":"2022-01-06T07:03:48Z","intvolume":"       108","article_number":"063902","language":[{"iso":"eng"}],"doi":"10.1063/1.3476265","issue":"6","publication":"Journal of Applied Physics","date_created":"2019-02-21T14:37:35Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}]},{"file":[{"date_created":"2018-08-28T12:28:22Z","creator":"hclaudia","content_type":"application/pdf","success":1,"file_id":"4203","date_updated":"2018-08-28T12:28:22Z","relation":"main_file","file_size":688753,"access_level":"closed","file_name":"Characterization of unintentional doping in nonpolar GaN.pdf"}],"date_created":"2018-08-28T12:27:34Z","type":"journal_article","department":[{"_id":"15"}],"issue":"2","publication":"Journal of Applied Physics","abstract":[{"text":"Unintentional doping in nonpolar a-plane \u0001112¯0\u0002 gallium nitride \u0001GaN\u0002 grown on r-plane \u000111¯02\u0002\r\nsapphire using a three-dimensional \u00013D\u0002–two-dimensional \u00012D\u0002 growth method has been\r\ncharacterized. For both 2D only and 3D–2D growth, the presence of an unintentionally doped region\r\nadjacent to the GaN/sapphire interface is observed by scanning capacitance microscopy \u0001SCM\u0002. The\r\naverage width of this unintentionally doped layer is found to increase with increasing 3D growth\r\ntime. By using an intentionally doped GaN:Si staircase structure for calibration, it is shown that the\r\nunintentionally doped region has an average carrier concentration of \u00012.5\u00010.3\u0002\u00021018 cm−3. SCM\r\nalso reveals the presence of unintentionally doped features extending at 60° from the GaN/sapphire\r\ninterface. The observation of decreasing carrier concentration with distance from the GaN/sapphire\r\ninterface along these features may suggest that the unintentional doping arises from oxygen\r\ndiffusion from the sapphire substrate. Low temperature cathodoluminescence spectra reveal\r\nemission peaks at 3.41 and 3.30 eV, which are believed to originate from basal plane stacking faults\r\n\u0001BSFs\u0002 and prismatic stacking faults \u0001PSFs\u0002, respectively. It is shown that the inclined features\r\nextending from the GaN/sapphire interface exhibit both enhanced BSF and PSF emission. We\r\nsuggest that enhanced unintentional doping occurs in regions around PSFs. Where BSFs intersect\r\nthis doped material their emission is also enhanced due to reduced nonradiative recombination.\r\nTransmission electron microscopy confirms the presence of PSFs extending through the film at 60°\r\nfrom the GaN/sapphire interface.","lang":"eng"}],"extern":"1","article_number":"023503","language":[{"iso":"eng"}],"doi":"10.1063/1.3284944","title":"Characterization of unintentional doping in nonpolar GaN","year":"2010","author":[{"first_name":"Tongtong","last_name":"Zhu","full_name":"Zhu, Tongtong"},{"full_name":"Johnston, Carol F.","first_name":"Carol F.","last_name":"Johnston"},{"first_name":"Maik","last_name":"Häberlen","full_name":"Häberlen, Maik"},{"first_name":"Menno J.","last_name":"Kappers","full_name":"Kappers, Menno J."},{"full_name":"Oliver, Rachel A.","first_name":"Rachel A.","last_name":"Oliver"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"date_updated":"2022-01-06T07:00:34Z","publication_status":"published","intvolume":"       107","article_type":"original","file_date_updated":"2018-08-28T12:28:22Z","citation":{"ieee":"T. Zhu, C. F. Johnston, M. Häberlen, M. J. Kappers, and R. A. Oliver, “Characterization of unintentional doping in nonpolar GaN,” <i>Journal of Applied Physics</i>, vol. 107, no. 2, 2010.","apa":"Zhu, T., Johnston, C. F., Häberlen, M., Kappers, M. J., &#38; Oliver, R. A. (2010). Characterization of unintentional doping in nonpolar GaN. <i>Journal of Applied Physics</i>, <i>107</i>(2). <a href=\"https://doi.org/10.1063/1.3284944\">https://doi.org/10.1063/1.3284944</a>","short":"T. Zhu, C.F. Johnston, M. Häberlen, M.J. Kappers, R.A. Oliver, Journal of Applied Physics 107 (2010).","chicago":"Zhu, Tongtong, Carol F. Johnston, Maik Häberlen, Menno J. Kappers, and Rachel A. Oliver. “Characterization of Unintentional Doping in Nonpolar GaN.” <i>Journal of Applied Physics</i> 107, no. 2 (2010). <a href=\"https://doi.org/10.1063/1.3284944\">https://doi.org/10.1063/1.3284944</a>.","mla":"Zhu, Tongtong, et al. “Characterization of Unintentional Doping in Nonpolar GaN.” <i>Journal of Applied Physics</i>, vol. 107, no. 2, 023503, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3284944\">10.1063/1.3284944</a>.","bibtex":"@article{Zhu_Johnston_Häberlen_Kappers_Oliver_2010, title={Characterization of unintentional doping in nonpolar GaN}, volume={107}, DOI={<a href=\"https://doi.org/10.1063/1.3284944\">10.1063/1.3284944</a>}, number={2023503}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zhu, Tongtong and Johnston, Carol F. and Häberlen, Maik and Kappers, Menno J. and Oliver, Rachel A.}, year={2010} }","ama":"Zhu T, Johnston CF, Häberlen M, Kappers MJ, Oliver RA. Characterization of unintentional doping in nonpolar GaN. <i>Journal of Applied Physics</i>. 2010;107(2). doi:<a href=\"https://doi.org/10.1063/1.3284944\">10.1063/1.3284944</a>"},"publisher":"AIP Publishing","_id":"4202","ddc":["530"],"user_id":"55706","volume":107,"status":"public","has_accepted_license":"1"},{"file_date_updated":"2018-08-28T12:47:23Z","citation":{"ieee":"M. Häberlen <i>et al.</i>, “Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth,” <i>Journal of Applied Physics</i>, vol. 108, no. 3, 2010.","apa":"Häberlen, M., Badcock, T. J., Moram, M. A., Hollander, J. L., Kappers, M. J., Dawson, P., … Oliver, R. A. (2010). Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. <i>Journal of Applied Physics</i>, <i>108</i>(3). <a href=\"https://doi.org/10.1063/1.3460641\">https://doi.org/10.1063/1.3460641</a>","mla":"Häberlen, M., et al. “Low Temperature Photoluminescence and Cathodoluminescence Studies of Nonpolar GaN Grown Using Epitaxial Lateral Overgrowth.” <i>Journal of Applied Physics</i>, vol. 108, no. 3, 033523, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3460641\">10.1063/1.3460641</a>.","bibtex":"@article{Häberlen_Badcock_Moram_Hollander_Kappers_Dawson_Humphreys_Oliver_2010, title={Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth}, volume={108}, DOI={<a href=\"https://doi.org/10.1063/1.3460641\">10.1063/1.3460641</a>}, number={3033523}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Häberlen, M. and Badcock, T. J. and Moram, M. A. and Hollander, J. L. and Kappers, M. J. and Dawson, P. and Humphreys, C. J. and Oliver, R. A.}, year={2010} }","short":"M. Häberlen, T.J. Badcock, M.A. Moram, J.L. Hollander, M.J. Kappers, P. Dawson, C.J. Humphreys, R.A. Oliver, Journal of Applied Physics 108 (2010).","ama":"Häberlen M, Badcock TJ, Moram MA, et al. Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. <i>Journal of Applied Physics</i>. 2010;108(3). doi:<a href=\"https://doi.org/10.1063/1.3460641\">10.1063/1.3460641</a>","chicago":"Häberlen, M., T. J. Badcock, M. A. Moram, J. L. Hollander, M. J. Kappers, P. Dawson, C. J. Humphreys, and R. A. Oliver. “Low Temperature Photoluminescence and Cathodoluminescence Studies of Nonpolar GaN Grown Using Epitaxial Lateral Overgrowth.” <i>Journal of Applied Physics</i> 108, no. 3 (2010). <a href=\"https://doi.org/10.1063/1.3460641\">https://doi.org/10.1063/1.3460641</a>."},"status":"public","has_accepted_license":"1","_id":"4212","publisher":"AIP Publishing","user_id":"55706","ddc":["530"],"volume":108,"publication":"Journal of Applied Physics","issue":"3","abstract":[{"lang":"eng","text":"Low temperature cathodo- and photoluminescence has been performed on nonpolar a-plane GaN films grown using epitaxial lateral overgrowth. In films overgrown at a low V–III ratio, the emission spectrum is dominated by “yellow” and “blue” luminescence bands, attributed to recombination at point defects or impurities. The intensity of this emission is observed to decrease steadily across the window region along the −c direction, possibly due to asymmetric diffusion of a point defect/impurity species. When overgrown at a higher V–III ratio, the near band edge and basal-plane stacking fault emission intensity increases by orders of magnitude and a donor–acceptor pair band is observed. Using monochromatic cathodoluminescence imaging, the various emission features are correlated with the microstructure of the film. In particular, the peak energy of the basal-plane stacking fault emission is seen to be blueshifted by \u000415 meV in the wing relative to the window region, which may be related to the different strain states in the respective regions."}],"file":[{"access_level":"closed","file_size":2391054,"file_name":"Low temperature photoluminescence and cathodoluminescence studies of non-polar GaN grown using epitaxial lateral overgrowth.pdf","date_updated":"2018-08-28T12:47:23Z","relation":"main_file","content_type":"application/pdf","success":1,"file_id":"4213","creator":"hclaudia","date_created":"2018-08-28T12:47:23Z"}],"date_created":"2018-08-28T12:46:49Z","type":"journal_article","department":[{"_id":"15"}],"year":"2010","title":"Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth","publication_identifier":{"issn":["0021-8979","1089-7550"]},"author":[{"last_name":"Häberlen","first_name":"M.","full_name":"Häberlen, M."},{"full_name":"Badcock, T. J.","last_name":"Badcock","first_name":"T. J."},{"last_name":"Moram","first_name":"M. A.","full_name":"Moram, M. A."},{"last_name":"Hollander","first_name":"J. L.","full_name":"Hollander, J. L."},{"full_name":"Kappers, M. J.","first_name":"M. J.","last_name":"Kappers"},{"full_name":"Dawson, P.","first_name":"P.","last_name":"Dawson"},{"full_name":"Humphreys, C. J.","last_name":"Humphreys","first_name":"C. J."},{"first_name":"R. A.","last_name":"Oliver","full_name":"Oliver, R. A."}],"publication_status":"published","date_updated":"2022-01-06T07:00:37Z","article_type":"original","intvolume":"       108","article_number":"033523","language":[{"iso":"eng"}],"doi":"10.1063/1.3460641"},{"year":"2009","title":"Electroconvection of liquid crystals: Tool for fabricating modulated polymer surfaces","publication_identifier":{"issn":["0021-8979","1089-7550"]},"author":[{"full_name":"Hoischen, A.","last_name":"Hoischen","first_name":"A."},{"full_name":"Benning, S. A.","first_name":"S. A.","last_name":"Benning"},{"id":"254","full_name":"Kitzerow, Heinz-Siegfried","first_name":"Heinz-Siegfried","last_name":"Kitzerow"}],"date_updated":"2023-01-24T18:51:47Z","publication_status":"published","intvolume":"       105","article_number":"013540","language":[{"iso":"eng"}],"doi":"10.1063/1.3055398","issue":"1","publication":"Journal of Applied Physics","date_created":"2023-01-24T18:51:19Z","type":"journal_article","keyword":["General Physics and Astronomy"],"department":[{"_id":"313"},{"_id":"638"}],"status":"public","_id":"39747","publisher":"AIP Publishing","user_id":"254","volume":105,"citation":{"chicago":"Hoischen, A., S. A. Benning, and Heinz-Siegfried Kitzerow. “Electroconvection of Liquid Crystals: Tool for Fabricating Modulated Polymer Surfaces.” <i>Journal of Applied Physics</i> 105, no. 1 (2009). <a href=\"https://doi.org/10.1063/1.3055398\">https://doi.org/10.1063/1.3055398</a>.","short":"A. Hoischen, S.A. Benning, H.-S. Kitzerow, Journal of Applied Physics 105 (2009).","apa":"Hoischen, A., Benning, S. A., &#38; Kitzerow, H.-S. (2009). Electroconvection of liquid crystals: Tool for fabricating modulated polymer surfaces. <i>Journal of Applied Physics</i>, <i>105</i>(1), Article 013540. <a href=\"https://doi.org/10.1063/1.3055398\">https://doi.org/10.1063/1.3055398</a>","ieee":"A. Hoischen, S. A. Benning, and H.-S. Kitzerow, “Electroconvection of liquid crystals: Tool for fabricating modulated polymer surfaces,” <i>Journal of Applied Physics</i>, vol. 105, no. 1, Art. no. 013540, 2009, doi: <a href=\"https://doi.org/10.1063/1.3055398\">10.1063/1.3055398</a>.","ama":"Hoischen A, Benning SA, Kitzerow H-S. Electroconvection of liquid crystals: Tool for fabricating modulated polymer surfaces. <i>Journal of Applied Physics</i>. 2009;105(1). doi:<a href=\"https://doi.org/10.1063/1.3055398\">10.1063/1.3055398</a>","bibtex":"@article{Hoischen_Benning_Kitzerow_2009, title={Electroconvection of liquid crystals: Tool for fabricating modulated polymer surfaces}, volume={105}, DOI={<a href=\"https://doi.org/10.1063/1.3055398\">10.1063/1.3055398</a>}, number={1013540}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Hoischen, A. and Benning, S. A. and Kitzerow, Heinz-Siegfried}, year={2009} }","mla":"Hoischen, A., et al. “Electroconvection of Liquid Crystals: Tool for Fabricating Modulated Polymer Surfaces.” <i>Journal of Applied Physics</i>, vol. 105, no. 1, 013540, AIP Publishing, 2009, doi:<a href=\"https://doi.org/10.1063/1.3055398\">10.1063/1.3055398</a>."}},{"type":"journal_article","department":[{"_id":"15"}],"date_created":"2019-02-13T11:33:50Z","extern":"1","publication":"Journal of Applied Physics","issue":"10","doi":"10.1063/1.2720095","article_number":"103112","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2022-01-06T07:03:43Z","intvolume":"       101","year":"2007","title":"Silicon nanoparticles: Absorption, emission, and the nature of the electronic bandgap","publication_identifier":{"issn":["0021-8979","1089-7550"]},"author":[{"last_name":"Meier","first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","id":"20798"},{"first_name":"Andreas","last_name":"Gondorf","full_name":"Gondorf, Andreas"},{"full_name":"Lüttjohann, Stephan","last_name":"Lüttjohann","first_name":"Stephan"},{"full_name":"Lorke, Axel","last_name":"Lorke","first_name":"Axel"},{"last_name":"Wiggers","first_name":"Hartmut","full_name":"Wiggers, Hartmut"}],"citation":{"ieee":"C. Meier, A. Gondorf, S. Lüttjohann, A. Lorke, and H. Wiggers, “Silicon nanoparticles: Absorption, emission, and the nature of the electronic bandgap,” <i>Journal of Applied Physics</i>, vol. 101, no. 10, 2007.","mla":"Meier, Cedrik, et al. “Silicon Nanoparticles: Absorption, Emission, and the Nature of the Electronic Bandgap.” <i>Journal of Applied Physics</i>, vol. 101, no. 10, 103112, AIP Publishing, 2007, doi:<a href=\"https://doi.org/10.1063/1.2720095\">10.1063/1.2720095</a>.","apa":"Meier, C., Gondorf, A., Lüttjohann, S., Lorke, A., &#38; Wiggers, H. (2007). Silicon nanoparticles: Absorption, emission, and the nature of the electronic bandgap. <i>Journal of Applied Physics</i>, <i>101</i>(10). <a href=\"https://doi.org/10.1063/1.2720095\">https://doi.org/10.1063/1.2720095</a>","bibtex":"@article{Meier_Gondorf_Lüttjohann_Lorke_Wiggers_2007, title={Silicon nanoparticles: Absorption, emission, and the nature of the electronic bandgap}, volume={101}, DOI={<a href=\"https://doi.org/10.1063/1.2720095\">10.1063/1.2720095</a>}, number={10103112}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Meier, Cedrik and Gondorf, Andreas and Lüttjohann, Stephan and Lorke, Axel and Wiggers, Hartmut}, year={2007} }","chicago":"Meier, Cedrik, Andreas Gondorf, Stephan Lüttjohann, Axel Lorke, and Hartmut Wiggers. “Silicon Nanoparticles: Absorption, Emission, and the Nature of the Electronic Bandgap.” <i>Journal of Applied Physics</i> 101, no. 10 (2007). <a href=\"https://doi.org/10.1063/1.2720095\">https://doi.org/10.1063/1.2720095</a>.","ama":"Meier C, Gondorf A, Lüttjohann S, Lorke A, Wiggers H. Silicon nanoparticles: Absorption, emission, and the nature of the electronic bandgap. <i>Journal of Applied Physics</i>. 2007;101(10). doi:<a href=\"https://doi.org/10.1063/1.2720095\">10.1063/1.2720095</a>","short":"C. Meier, A. Gondorf, S. Lüttjohann, A. Lorke, H. Wiggers, Journal of Applied Physics 101 (2007)."},"user_id":"20798","volume":101,"publisher":"AIP Publishing","_id":"7643","status":"public"},{"publisher":"AIP Publishing","_id":"7648","user_id":"20798","volume":99,"status":"public","citation":{"mla":"Meier, Cedrik, et al. “Vibrational and Defect States in SnOx Nanoparticles.” <i>Journal of Applied Physics</i>, vol. 99, no. 11, 113108, AIP Publishing, 2006, doi:<a href=\"https://doi.org/10.1063/1.2203408\">10.1063/1.2203408</a>.","bibtex":"@article{Meier_Lüttjohann_Kravets_Nienhaus_Lorke_Ifeacho_Wiggers_Schulz_Kennedy_Kruis_2006, title={Vibrational and defect states in SnOx nanoparticles}, volume={99}, DOI={<a href=\"https://doi.org/10.1063/1.2203408\">10.1063/1.2203408</a>}, number={11113108}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Meier, Cedrik and Lüttjohann, Stephan and Kravets, Vasyl G. and Nienhaus, Hermann and Lorke, Axel and Ifeacho, Pascal and Wiggers, Hartmut and Schulz, Christof and Kennedy, Marcus K. and Kruis, F. Einar}, year={2006} }","ama":"Meier C, Lüttjohann S, Kravets VG, et al. Vibrational and defect states in SnOx nanoparticles. <i>Journal of Applied Physics</i>. 2006;99(11). doi:<a href=\"https://doi.org/10.1063/1.2203408\">10.1063/1.2203408</a>","ieee":"C. Meier <i>et al.</i>, “Vibrational and defect states in SnOx nanoparticles,” <i>Journal of Applied Physics</i>, vol. 99, no. 11, 2006.","apa":"Meier, C., Lüttjohann, S., Kravets, V. G., Nienhaus, H., Lorke, A., Ifeacho, P., … Kruis, F. E. (2006). Vibrational and defect states in SnOx nanoparticles. <i>Journal of Applied Physics</i>, <i>99</i>(11). <a href=\"https://doi.org/10.1063/1.2203408\">https://doi.org/10.1063/1.2203408</a>","short":"C. Meier, S. Lüttjohann, V.G. Kravets, H. Nienhaus, A. Lorke, P. Ifeacho, H. Wiggers, C. Schulz, M.K. Kennedy, F.E. Kruis, Journal of Applied Physics 99 (2006).","chicago":"Meier, Cedrik, Stephan Lüttjohann, Vasyl G. Kravets, Hermann Nienhaus, Axel Lorke, Pascal Ifeacho, Hartmut Wiggers, Christof Schulz, Marcus K. Kennedy, and F. Einar Kruis. “Vibrational and Defect States in SnOx Nanoparticles.” <i>Journal of Applied Physics</i> 99, no. 11 (2006). <a href=\"https://doi.org/10.1063/1.2203408\">https://doi.org/10.1063/1.2203408</a>."},"article_number":"113108","language":[{"iso":"eng"}],"doi":"10.1063/1.2203408","title":"Vibrational and defect states in SnOx nanoparticles","year":"2006","author":[{"full_name":"Meier, Cedrik","first_name":"Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","id":"20798"},{"first_name":"Stephan","last_name":"Lüttjohann","full_name":"Lüttjohann, Stephan"},{"first_name":"Vasyl G.","last_name":"Kravets","full_name":"Kravets, Vasyl G."},{"full_name":"Nienhaus, Hermann","last_name":"Nienhaus","first_name":"Hermann"},{"full_name":"Lorke, Axel","last_name":"Lorke","first_name":"Axel"},{"first_name":"Pascal","last_name":"Ifeacho","full_name":"Ifeacho, Pascal"},{"first_name":"Hartmut","last_name":"Wiggers","full_name":"Wiggers, Hartmut"},{"full_name":"Schulz, Christof","first_name":"Christof","last_name":"Schulz"},{"first_name":"Marcus K.","last_name":"Kennedy","full_name":"Kennedy, Marcus K."},{"last_name":"Kruis","first_name":"F. Einar","full_name":"Kruis, F. Einar"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","date_updated":"2022-01-06T07:03:43Z","intvolume":"        99","date_created":"2019-02-13T11:38:17Z","type":"journal_article","department":[{"_id":"15"}],"publication":"Journal of Applied Physics","issue":"11","extern":"1"},{"date_created":"2019-03-27T07:57:04Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","citation":{"apa":"Gerhardt, N. C., Hövel, S., Brenner, C., Hofmann, M. R., Lo, F.-Y., Reuter, D., … Westerholt, K. (2006). Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts. <i>Journal of Applied Physics</i>. <a href=\"https://doi.org/10.1063/1.2186376\">https://doi.org/10.1063/1.2186376</a>","ieee":"N. C. Gerhardt <i>et al.</i>, “Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts,” <i>Journal of Applied Physics</i>, 2006.","chicago":"Gerhardt, N. C., S. Hövel, C. Brenner, M. R. Hofmann, F.-Y. Lo, Dirk Reuter, A. D. Wieck, et al. “Spin Injection Light-Emitting Diode with Vertically Magnetized Ferromagnetic Metal Contacts.” <i>Journal of Applied Physics</i>, 2006. <a href=\"https://doi.org/10.1063/1.2186376\">https://doi.org/10.1063/1.2186376</a>.","short":"N.C. Gerhardt, S. Hövel, C. Brenner, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D. Wieck, E. Schuster, W. Keune, S. Halm, G. Bacher, K. Westerholt, Journal of Applied Physics (2006).","mla":"Gerhardt, N. C., et al. “Spin Injection Light-Emitting Diode with Vertically Magnetized Ferromagnetic Metal Contacts.” <i>Journal of Applied Physics</i>, 073907, 2006, doi:<a href=\"https://doi.org/10.1063/1.2186376\">10.1063/1.2186376</a>.","ama":"Gerhardt NC, Hövel S, Brenner C, et al. Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts. <i>Journal of Applied Physics</i>. 2006. doi:<a href=\"https://doi.org/10.1063/1.2186376\">10.1063/1.2186376</a>","bibtex":"@article{Gerhardt_Hövel_Brenner_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Halm_et al._2006, title={Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts}, DOI={<a href=\"https://doi.org/10.1063/1.2186376\">10.1063/1.2186376</a>}, number={073907}, journal={Journal of Applied Physics}, author={Gerhardt, N. C. and Hövel, S. and Brenner, C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Keune, W. and Halm, S. and et al.}, year={2006} }"},"publication":"Journal of Applied Physics","_id":"8651","language":[{"iso":"eng"}],"article_number":"073907","user_id":"42514","doi":"10.1063/1.2186376","author":[{"full_name":"Gerhardt, N. C.","last_name":"Gerhardt","first_name":"N. C."},{"full_name":"Hövel, S.","first_name":"S.","last_name":"Hövel"},{"first_name":"C.","last_name":"Brenner","full_name":"Brenner, C."},{"full_name":"Hofmann, M. R.","first_name":"M. R.","last_name":"Hofmann"},{"full_name":"Lo, F.-Y.","last_name":"Lo","first_name":"F.-Y."},{"id":"37763","last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."},{"first_name":"E.","last_name":"Schuster","full_name":"Schuster, E."},{"first_name":"W.","last_name":"Keune","full_name":"Keune, W."},{"full_name":"Halm, S.","last_name":"Halm","first_name":"S."},{"full_name":"Bacher, G.","last_name":"Bacher","first_name":"G."},{"full_name":"Westerholt, K.","first_name":"K.","last_name":"Westerholt"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"year":"2006","title":"Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts","status":"public","publication_status":"published","date_updated":"2022-01-06T07:03:58Z"},{"publisher":"AIP Publishing","_id":"29681","user_id":"26883","volume":100,"status":"public","citation":{"mla":"Schmalhorst, J., et al. “Magnetic and Chemical Properties of Co[Sub 2]MnSi Thin Films Compared to the Co[Sub 2]MnSi∕Al-O Interface.” <i>Journal of Applied Physics</i>, vol. 100, no. 11, 113903, AIP Publishing, 2006, doi:<a href=\"https://doi.org/10.1063/1.2384806\">10.1063/1.2384806</a>.","ama":"Schmalhorst J, Sacher M, Höink V, et al. Magnetic and chemical properties of Co[sub 2]MnSi thin films compared to the Co[sub 2]MnSi∕Al-O interface. <i>Journal of Applied Physics</i>. 2006;100(11). doi:<a href=\"https://doi.org/10.1063/1.2384806\">10.1063/1.2384806</a>","bibtex":"@article{Schmalhorst_Sacher_Höink_Reiss_Hütten_Engel_Ehresmann_2006, title={Magnetic and chemical properties of Co[sub 2]MnSi thin films compared to the Co[sub 2]MnSi∕Al-O interface}, volume={100}, DOI={<a href=\"https://doi.org/10.1063/1.2384806\">10.1063/1.2384806</a>}, number={11113903}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Schmalhorst, J. and Sacher, Marc and Höink, V. and Reiss, G. and Hütten, A. and Engel, D. and Ehresmann, A.}, year={2006} }","apa":"Schmalhorst, J., Sacher, M., Höink, V., Reiss, G., Hütten, A., Engel, D., &#38; Ehresmann, A. (2006). Magnetic and chemical properties of Co[sub 2]MnSi thin films compared to the Co[sub 2]MnSi∕Al-O interface. <i>Journal of Applied Physics</i>, <i>100</i>(11), Article 113903. <a href=\"https://doi.org/10.1063/1.2384806\">https://doi.org/10.1063/1.2384806</a>","ieee":"J. Schmalhorst <i>et al.</i>, “Magnetic and chemical properties of Co[sub 2]MnSi thin films compared to the Co[sub 2]MnSi∕Al-O interface,” <i>Journal of Applied Physics</i>, vol. 100, no. 11, Art. no. 113903, 2006, doi: <a href=\"https://doi.org/10.1063/1.2384806\">10.1063/1.2384806</a>.","short":"J. Schmalhorst, M. Sacher, V. Höink, G. Reiss, A. Hütten, D. Engel, A. Ehresmann, Journal of Applied Physics 100 (2006).","chicago":"Schmalhorst, J., Marc Sacher, V. Höink, G. Reiss, A. Hütten, D. Engel, and A. Ehresmann. “Magnetic and Chemical Properties of Co[Sub 2]MnSi Thin Films Compared to the Co[Sub 2]MnSi∕Al-O Interface.” <i>Journal of Applied Physics</i> 100, no. 11 (2006). <a href=\"https://doi.org/10.1063/1.2384806\">https://doi.org/10.1063/1.2384806</a>."},"article_number":"113903","language":[{"iso":"eng"}],"doi":"10.1063/1.2384806","title":"Magnetic and chemical properties of Co[sub 2]MnSi thin films compared to the Co[sub 2]MnSi∕Al-O interface","year":"2006","publication_identifier":{"issn":["0021-8979"]},"author":[{"first_name":"J.","last_name":"Schmalhorst","full_name":"Schmalhorst, J."},{"last_name":"Sacher","orcid":"0000-0001-6217-336X","first_name":"Marc","full_name":"Sacher, Marc","id":"26883"},{"full_name":"Höink, V.","first_name":"V.","last_name":"Höink"},{"full_name":"Reiss, G.","first_name":"G.","last_name":"Reiss"},{"first_name":"A.","last_name":"Hütten","full_name":"Hütten, A."},{"full_name":"Engel, D.","last_name":"Engel","first_name":"D."},{"last_name":"Ehresmann","first_name":"A.","full_name":"Ehresmann, A."}],"date_updated":"2024-04-23T12:18:21Z","publication_status":"published","intvolume":"       100","date_created":"2022-01-31T10:14:42Z","type":"journal_article","keyword":["General Physics and Astronomy"],"department":[{"_id":"15"}],"publication":"Journal of Applied Physics","issue":"11","extern":"1"},{"volume":100,"user_id":"26883","_id":"29683","publisher":"AIP Publishing","status":"public","citation":{"mla":"Höink, V., et al. “Switchable Resonant X-Ray Bragg Scattering on a Magnetic Grating Patterned by Ion Bombardment.” <i>Journal of Applied Physics</i>, vol. 100, no. 6, 063903, AIP Publishing, 2006, doi:<a href=\"https://doi.org/10.1063/1.2349568\">10.1063/1.2349568</a>.","bibtex":"@article{Höink_Sacher_Schmalhorst_Reiss_Engel_Weis_Ehresmann_2006, title={Switchable resonant x-ray Bragg scattering on a magnetic grating patterned by ion bombardment}, volume={100}, DOI={<a href=\"https://doi.org/10.1063/1.2349568\">10.1063/1.2349568</a>}, number={6063903}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Höink, V. and Sacher, Marc and Schmalhorst, J. and Reiss, G. and Engel, D. and Weis, T. and Ehresmann, A.}, year={2006} }","ama":"Höink V, Sacher M, Schmalhorst J, et al. Switchable resonant x-ray Bragg scattering on a magnetic grating patterned by ion bombardment. <i>Journal of Applied Physics</i>. 2006;100(6). doi:<a href=\"https://doi.org/10.1063/1.2349568\">10.1063/1.2349568</a>","ieee":"V. Höink <i>et al.</i>, “Switchable resonant x-ray Bragg scattering on a magnetic grating patterned by ion bombardment,” <i>Journal of Applied Physics</i>, vol. 100, no. 6, Art. no. 063903, 2006, doi: <a href=\"https://doi.org/10.1063/1.2349568\">10.1063/1.2349568</a>.","apa":"Höink, V., Sacher, M., Schmalhorst, J., Reiss, G., Engel, D., Weis, T., &#38; Ehresmann, A. (2006). Switchable resonant x-ray Bragg scattering on a magnetic grating patterned by ion bombardment. <i>Journal of Applied Physics</i>, <i>100</i>(6), Article 063903. <a href=\"https://doi.org/10.1063/1.2349568\">https://doi.org/10.1063/1.2349568</a>","short":"V. Höink, M. Sacher, J. Schmalhorst, G. Reiss, D. Engel, T. Weis, A. Ehresmann, Journal of Applied Physics 100 (2006).","chicago":"Höink, V., Marc Sacher, J. Schmalhorst, G. Reiss, D. Engel, T. Weis, and A. Ehresmann. “Switchable Resonant X-Ray Bragg Scattering on a Magnetic Grating Patterned by Ion Bombardment.” <i>Journal of Applied Physics</i> 100, no. 6 (2006). <a href=\"https://doi.org/10.1063/1.2349568\">https://doi.org/10.1063/1.2349568</a>."},"doi":"10.1063/1.2349568","language":[{"iso":"eng"}],"article_number":"063903","intvolume":"       100","date_updated":"2024-04-23T12:18:12Z","publication_status":"published","author":[{"last_name":"Höink","first_name":"V.","full_name":"Höink, V."},{"full_name":"Sacher, Marc","first_name":"Marc","last_name":"Sacher","orcid":"0000-0001-6217-336X","id":"26883"},{"full_name":"Schmalhorst, J.","first_name":"J.","last_name":"Schmalhorst"},{"last_name":"Reiss","first_name":"G.","full_name":"Reiss, G."},{"full_name":"Engel, D.","last_name":"Engel","first_name":"D."},{"full_name":"Weis, T.","last_name":"Weis","first_name":"T."},{"first_name":"A.","last_name":"Ehresmann","full_name":"Ehresmann, A."}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"year":"2006","title":"Switchable resonant x-ray Bragg scattering on a magnetic grating patterned by ion bombardment","department":[{"_id":"15"}],"type":"journal_article","keyword":["General Physics and Astronomy"],"date_created":"2022-01-31T10:15:57Z","extern":"1","publication":"Journal of Applied Physics","issue":"6"},{"_id":"39761","publisher":"AIP Publishing","user_id":"254","volume":100,"status":"public","citation":{"chicago":"Paelke, Lutz, and Heinz-Siegfried Kitzerow. “Space Charge Field and Dynamics of the Grating Formation in a Photorefractive Polymer-Dispersed Liquid Crystal Based on a Photoconducting Polysiloxane.” <i>Journal of Applied Physics</i> 100, no. 11 (2006). <a href=\"https://doi.org/10.1063/1.2372434\">https://doi.org/10.1063/1.2372434</a>.","short":"L. Paelke, H.-S. Kitzerow, Journal of Applied Physics 100 (2006).","apa":"Paelke, L., &#38; Kitzerow, H.-S. (2006). Space charge field and dynamics of the grating formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane. <i>Journal of Applied Physics</i>, <i>100</i>(11), Article 113101. <a href=\"https://doi.org/10.1063/1.2372434\">https://doi.org/10.1063/1.2372434</a>","ieee":"L. Paelke and H.-S. Kitzerow, “Space charge field and dynamics of the grating formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane,” <i>Journal of Applied Physics</i>, vol. 100, no. 11, Art. no. 113101, 2006, doi: <a href=\"https://doi.org/10.1063/1.2372434\">10.1063/1.2372434</a>.","ama":"Paelke L, Kitzerow H-S. Space charge field and dynamics of the grating formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane. <i>Journal of Applied Physics</i>. 2006;100(11). doi:<a href=\"https://doi.org/10.1063/1.2372434\">10.1063/1.2372434</a>","bibtex":"@article{Paelke_Kitzerow_2006, title={Space charge field and dynamics of the grating formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane}, volume={100}, DOI={<a href=\"https://doi.org/10.1063/1.2372434\">10.1063/1.2372434</a>}, number={11113101}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Paelke, Lutz and Kitzerow, Heinz-Siegfried}, year={2006} }","mla":"Paelke, Lutz, and Heinz-Siegfried Kitzerow. “Space Charge Field and Dynamics of the Grating Formation in a Photorefractive Polymer-Dispersed Liquid Crystal Based on a Photoconducting Polysiloxane.” <i>Journal of Applied Physics</i>, vol. 100, no. 11, 113101, AIP Publishing, 2006, doi:<a href=\"https://doi.org/10.1063/1.2372434\">10.1063/1.2372434</a>."},"article_number":"113101","language":[{"iso":"eng"}],"doi":"10.1063/1.2372434","title":"Space charge field and dynamics of the grating formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane","year":"2006","publication_identifier":{"issn":["0021-8979"]},"author":[{"full_name":"Paelke, Lutz","last_name":"Paelke","first_name":"Lutz"},{"id":"254","full_name":"Kitzerow, Heinz-Siegfried","last_name":"Kitzerow","first_name":"Heinz-Siegfried"}],"publication_status":"published","date_updated":"2023-01-24T19:09:08Z","intvolume":"       100","date_created":"2023-01-24T19:08:50Z","type":"journal_article","keyword":["General Physics and Astronomy"],"department":[{"_id":"313"},{"_id":"638"}],"publication":"Journal of Applied Physics","issue":"11"},{"year":"2005","title":"Infrared properties of silicon nanoparticles","author":[{"full_name":"Kravets, Vasyl G.","last_name":"Kravets","first_name":"Vasyl G."},{"full_name":"Meier, Cedrik","last_name":"Meier","first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","id":"20798"},{"full_name":"Konjhodzic, Denan","last_name":"Konjhodzic","first_name":"Denan"},{"full_name":"Lorke, Axel","first_name":"Axel","last_name":"Lorke"},{"full_name":"Wiggers, Hartmut","last_name":"Wiggers","first_name":"Hartmut"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"date_updated":"2022-01-06T07:03:43Z","publication_status":"published","intvolume":"        97","article_number":"084306","language":[{"iso":"eng"}],"doi":"10.1063/1.1866475","issue":"8","publication":"Journal of Applied Physics","extern":"1","date_created":"2019-02-13T11:51:22Z","type":"journal_article","department":[{"_id":"15"}],"status":"public","publisher":"AIP Publishing","_id":"7657","user_id":"20798","volume":97,"citation":{"apa":"Kravets, V. G., Meier, C., Konjhodzic, D., Lorke, A., &#38; Wiggers, H. (2005). Infrared properties of silicon nanoparticles. <i>Journal of Applied Physics</i>, <i>97</i>(8). <a href=\"https://doi.org/10.1063/1.1866475\">https://doi.org/10.1063/1.1866475</a>","ieee":"V. G. Kravets, C. Meier, D. Konjhodzic, A. Lorke, and H. Wiggers, “Infrared properties of silicon nanoparticles,” <i>Journal of Applied Physics</i>, vol. 97, no. 8, 2005.","short":"V.G. Kravets, C. Meier, D. Konjhodzic, A. Lorke, H. Wiggers, Journal of Applied Physics 97 (2005).","chicago":"Kravets, Vasyl G., Cedrik Meier, Denan Konjhodzic, Axel Lorke, and Hartmut Wiggers. “Infrared Properties of Silicon Nanoparticles.” <i>Journal of Applied Physics</i> 97, no. 8 (2005). <a href=\"https://doi.org/10.1063/1.1866475\">https://doi.org/10.1063/1.1866475</a>.","mla":"Kravets, Vasyl G., et al. “Infrared Properties of Silicon Nanoparticles.” <i>Journal of Applied Physics</i>, vol. 97, no. 8, 084306, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.1866475\">10.1063/1.1866475</a>.","ama":"Kravets VG, Meier C, Konjhodzic D, Lorke A, Wiggers H. Infrared properties of silicon nanoparticles. <i>Journal of Applied Physics</i>. 2005;97(8). doi:<a href=\"https://doi.org/10.1063/1.1866475\">10.1063/1.1866475</a>","bibtex":"@article{Kravets_Meier_Konjhodzic_Lorke_Wiggers_2005, title={Infrared properties of silicon nanoparticles}, volume={97}, DOI={<a href=\"https://doi.org/10.1063/1.1866475\">10.1063/1.1866475</a>}, number={8084306}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kravets, Vasyl G. and Meier, Cedrik and Konjhodzic, Denan and Lorke, Axel and Wiggers, Hartmut}, year={2005} }"}},{"status":"public","_id":"29689","publisher":"AIP Publishing","user_id":"26883","volume":97,"citation":{"chicago":"Schmalhorst, J., Marc Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke. “X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic Tunnel Junctions.” <i>Journal of Applied Physics</i> 97, no. 12 (2005). <a href=\"https://doi.org/10.1063/1.1939086\">https://doi.org/10.1063/1.1939086</a>.","short":"J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, K. Starke, Journal of Applied Physics 97 (2005).","ieee":"J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke, “X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions,” <i>Journal of Applied Physics</i>, vol. 97, no. 12, Art. no. 123711, 2005, doi: <a href=\"https://doi.org/10.1063/1.1939086\">10.1063/1.1939086</a>.","apa":"Schmalhorst, J., Sacher, M., Thomas, A., Brückl, H., Reiss, G., &#38; Starke, K. (2005). X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions. <i>Journal of Applied Physics</i>, <i>97</i>(12), Article 123711. <a href=\"https://doi.org/10.1063/1.1939086\">https://doi.org/10.1063/1.1939086</a>","bibtex":"@article{Schmalhorst_Sacher_Thomas_Brückl_Reiss_Starke_2005, title={X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions}, volume={97}, DOI={<a href=\"https://doi.org/10.1063/1.1939086\">10.1063/1.1939086</a>}, number={12123711}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Schmalhorst, J. and Sacher, Marc and Thomas, A. and Brückl, H. and Reiss, G. and Starke, K.}, year={2005} }","ama":"Schmalhorst J, Sacher M, Thomas A, Brückl H, Reiss G, Starke K. X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions. <i>Journal of Applied Physics</i>. 2005;97(12). doi:<a href=\"https://doi.org/10.1063/1.1939086\">10.1063/1.1939086</a>","mla":"Schmalhorst, J., et al. “X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic Tunnel Junctions.” <i>Journal of Applied Physics</i>, vol. 97, no. 12, 123711, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.1939086\">10.1063/1.1939086</a>."},"title":"X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions","year":"2005","publication_identifier":{"issn":["0021-8979","1089-7550"]},"author":[{"full_name":"Schmalhorst, J.","last_name":"Schmalhorst","first_name":"J."},{"id":"26883","full_name":"Sacher, Marc","last_name":"Sacher","first_name":"Marc","orcid":"0000-0001-6217-336X"},{"full_name":"Thomas, A.","last_name":"Thomas","first_name":"A."},{"first_name":"H.","last_name":"Brückl","full_name":"Brückl, H."},{"last_name":"Reiss","first_name":"G.","full_name":"Reiss, G."},{"full_name":"Starke, K.","last_name":"Starke","first_name":"K."}],"date_updated":"2024-04-23T12:17:13Z","publication_status":"published","intvolume":"        97","article_number":"123711","language":[{"iso":"eng"}],"doi":"10.1063/1.1939086","issue":"12","publication":"Journal of Applied Physics","extern":"1","date_created":"2022-01-31T10:20:49Z","type":"journal_article","keyword":["General Physics and Astronomy"],"department":[{"_id":"15"}]},{"_id":"29688","publisher":"AIP Publishing","volume":97,"user_id":"26883","status":"public","citation":{"short":"J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, K. Starke, Journal of Applied Physics 97 (2005).","ama":"Schmalhorst J, Sacher M, Thomas A, Brückl H, Reiss G, Starke K. X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions. <i>Journal of Applied Physics</i>. 2005;97(12). doi:<a href=\"https://doi.org/10.1063/1.1939086\">10.1063/1.1939086</a>","chicago":"Schmalhorst, J., Marc Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke. “X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic Tunnel Junctions.” <i>Journal of Applied Physics</i> 97, no. 12 (2005). <a href=\"https://doi.org/10.1063/1.1939086\">https://doi.org/10.1063/1.1939086</a>.","bibtex":"@article{Schmalhorst_Sacher_Thomas_Brückl_Reiss_Starke_2005, title={X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions}, volume={97}, DOI={<a href=\"https://doi.org/10.1063/1.1939086\">10.1063/1.1939086</a>}, number={12123711}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Schmalhorst, J. and Sacher, Marc and Thomas, A. and Brückl, H. and Reiss, G. and Starke, K.}, year={2005} }","apa":"Schmalhorst, J., Sacher, M., Thomas, A., Brückl, H., Reiss, G., &#38; Starke, K. (2005). X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions. <i>Journal of Applied Physics</i>, <i>97</i>(12), Article 123711. <a href=\"https://doi.org/10.1063/1.1939086\">https://doi.org/10.1063/1.1939086</a>","mla":"Schmalhorst, J., et al. “X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic Tunnel Junctions.” <i>Journal of Applied Physics</i>, vol. 97, no. 12, 123711, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.1939086\">10.1063/1.1939086</a>.","ieee":"J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke, “X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions,” <i>Journal of Applied Physics</i>, vol. 97, no. 12, Art. no. 123711, 2005, doi: <a href=\"https://doi.org/10.1063/1.1939086\">10.1063/1.1939086</a>."},"language":[{"iso":"eng"}],"article_number":"123711","doi":"10.1063/1.1939086","publication_identifier":{"issn":["0021-8979","1089-7550"]},"author":[{"full_name":"Schmalhorst, J.","last_name":"Schmalhorst","first_name":"J."},{"full_name":"Sacher, Marc","first_name":"Marc","last_name":"Sacher","orcid":"0000-0001-6217-336X","id":"26883"},{"last_name":"Thomas","first_name":"A.","full_name":"Thomas, A."},{"full_name":"Brückl, H.","first_name":"H.","last_name":"Brückl"},{"full_name":"Reiss, G.","last_name":"Reiss","first_name":"G."},{"last_name":"Starke","first_name":"K.","full_name":"Starke, K."}],"year":"2005","title":"X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions","intvolume":"        97","date_updated":"2024-04-23T12:17:37Z","publication_status":"published","date_created":"2022-01-31T10:19:13Z","department":[{"_id":"15"}],"keyword":["General Physics and Astronomy"],"type":"journal_article","issue":"12","publication":"Journal of Applied Physics","extern":"1"},{"issue":"10","publication":"Journal of Applied Physics","extern":"1","date_created":"2022-01-31T10:18:33Z","type":"journal_article","keyword":["General Physics and Astronomy"],"department":[{"_id":"15"}],"title":"Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions","year":"2005","author":[{"first_name":"Marc","last_name":"Sacher","orcid":"0000-0001-6217-336X","full_name":"Sacher, Marc","id":"26883"},{"full_name":"Sauerwald, J.","last_name":"Sauerwald","first_name":"J."},{"full_name":"Schmalhorst, J.","first_name":"J.","last_name":"Schmalhorst"},{"full_name":"Reiss, G.","first_name":"G.","last_name":"Reiss"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"date_updated":"2024-04-23T12:17:22Z","publication_status":"published","intvolume":"        98","article_number":"103532","language":[{"iso":"eng"}],"doi":"10.1063/1.2134883","citation":{"short":"M. Sacher, J. Sauerwald, J. Schmalhorst, G. Reiss, Journal of Applied Physics 98 (2005).","chicago":"Sacher, Marc, J. Sauerwald, J. Schmalhorst, and G. Reiss. “Influence of Noble-Gas Ion Irradiation on Alumina Barrier of Magnetic Tunnel Junctions.” <i>Journal of Applied Physics</i> 98, no. 10 (2005). <a href=\"https://doi.org/10.1063/1.2134883\">https://doi.org/10.1063/1.2134883</a>.","apa":"Sacher, M., Sauerwald, J., Schmalhorst, J., &#38; Reiss, G. (2005). Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions. <i>Journal of Applied Physics</i>, <i>98</i>(10), Article 103532. <a href=\"https://doi.org/10.1063/1.2134883\">https://doi.org/10.1063/1.2134883</a>","ieee":"M. Sacher, J. Sauerwald, J. Schmalhorst, and G. Reiss, “Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions,” <i>Journal of Applied Physics</i>, vol. 98, no. 10, Art. no. 103532, 2005, doi: <a href=\"https://doi.org/10.1063/1.2134883\">10.1063/1.2134883</a>.","ama":"Sacher M, Sauerwald J, Schmalhorst J, Reiss G. Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions. <i>Journal of Applied Physics</i>. 2005;98(10). doi:<a href=\"https://doi.org/10.1063/1.2134883\">10.1063/1.2134883</a>","bibtex":"@article{Sacher_Sauerwald_Schmalhorst_Reiss_2005, title={Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions}, volume={98}, DOI={<a href=\"https://doi.org/10.1063/1.2134883\">10.1063/1.2134883</a>}, number={10103532}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Sacher, Marc and Sauerwald, J. and Schmalhorst, J. and Reiss, G.}, year={2005} }","mla":"Sacher, Marc, et al. “Influence of Noble-Gas Ion Irradiation on Alumina Barrier of Magnetic Tunnel Junctions.” <i>Journal of Applied Physics</i>, vol. 98, no. 10, 103532, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.2134883\">10.1063/1.2134883</a>."},"status":"public","publisher":"AIP Publishing","_id":"29687","user_id":"26883","volume":98},{"citation":{"ama":"Stich N, Kitzerow H-S. Superposition of patterns in cross-linked liquid crystals. <i>Journal of Applied Physics</i>. 2005;97(3). doi:<a href=\"https://doi.org/10.1063/1.1832744\">10.1063/1.1832744</a>","bibtex":"@article{Stich_Kitzerow_2005, title={Superposition of patterns in cross-linked liquid crystals}, volume={97}, DOI={<a href=\"https://doi.org/10.1063/1.1832744\">10.1063/1.1832744</a>}, number={3033519}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Stich, N. and Kitzerow, Heinz-Siegfried}, year={2005} }","mla":"Stich, N., and Heinz-Siegfried Kitzerow. “Superposition of Patterns in Cross-Linked Liquid Crystals.” <i>Journal of Applied Physics</i>, vol. 97, no. 3, 033519, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.1832744\">10.1063/1.1832744</a>.","short":"N. Stich, H.-S. Kitzerow, Journal of Applied Physics 97 (2005).","chicago":"Stich, N., and Heinz-Siegfried Kitzerow. “Superposition of Patterns in Cross-Linked Liquid Crystals.” <i>Journal of Applied Physics</i> 97, no. 3 (2005). <a href=\"https://doi.org/10.1063/1.1832744\">https://doi.org/10.1063/1.1832744</a>.","apa":"Stich, N., &#38; Kitzerow, H.-S. (2005). Superposition of patterns in cross-linked liquid crystals. <i>Journal of Applied Physics</i>, <i>97</i>(3), Article 033519. <a href=\"https://doi.org/10.1063/1.1832744\">https://doi.org/10.1063/1.1832744</a>","ieee":"N. Stich and H.-S. Kitzerow, “Superposition of patterns in cross-linked liquid crystals,” <i>Journal of Applied Physics</i>, vol. 97, no. 3, Art. no. 033519, 2005, doi: <a href=\"https://doi.org/10.1063/1.1832744\">10.1063/1.1832744</a>."},"_id":"39770","publisher":"AIP Publishing","user_id":"254","volume":97,"status":"public","date_created":"2023-01-24T19:14:46Z","type":"journal_article","keyword":["General Physics and Astronomy"],"department":[{"_id":"313"},{"_id":"638"}],"publication":"Journal of Applied Physics","issue":"3","article_number":"033519","language":[{"iso":"eng"}],"doi":"10.1063/1.1832744","year":"2005","title":"Superposition of patterns in cross-linked liquid crystals","author":[{"last_name":"Stich","first_name":"N.","full_name":"Stich, N."},{"full_name":"Kitzerow, Heinz-Siegfried","last_name":"Kitzerow","first_name":"Heinz-Siegfried","id":"254"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","date_updated":"2023-01-24T19:15:41Z","intvolume":"        97"},{"date_updated":"2022-01-06T07:03:59Z","publication_status":"published","title":"Capacitance and tunneling spectroscopy of InAs quantum dots","year":"2004","status":"public","author":[{"full_name":"Schmidt, K. H.","first_name":"K. H.","last_name":"Schmidt"},{"last_name":"Bock","first_name":"C.","full_name":"Bock, C."},{"last_name":"Versen","first_name":"M.","full_name":"Versen, M."},{"first_name":"U.","last_name":"Kunze","full_name":"Kunze, U."},{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter","id":"37763"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"doi":"10.1063/1.1703827","user_id":"42514","page":"5715-5721","language":[{"iso":"eng"}],"_id":"8706","publication":"Journal of Applied Physics","citation":{"bibtex":"@article{Schmidt_Bock_Versen_Kunze_Reuter_Wieck_2004, title={Capacitance and tunneling spectroscopy of InAs quantum dots}, DOI={<a href=\"https://doi.org/10.1063/1.1703827\">10.1063/1.1703827</a>}, journal={Journal of Applied Physics}, author={Schmidt, K. H. and Bock, C. and Versen, M. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2004}, pages={5715–5721} }","ama":"Schmidt KH, Bock C, Versen M, Kunze U, Reuter D, Wieck AD. Capacitance and tunneling spectroscopy of InAs quantum dots. <i>Journal of Applied Physics</i>. 2004:5715-5721. doi:<a href=\"https://doi.org/10.1063/1.1703827\">10.1063/1.1703827</a>","mla":"Schmidt, K. H., et al. “Capacitance and Tunneling Spectroscopy of InAs Quantum Dots.” <i>Journal of Applied Physics</i>, 2004, pp. 5715–21, doi:<a href=\"https://doi.org/10.1063/1.1703827\">10.1063/1.1703827</a>.","chicago":"Schmidt, K. H., C. Bock, M. Versen, U. Kunze, Dirk Reuter, and A. D. Wieck. “Capacitance and Tunneling Spectroscopy of InAs Quantum Dots.” <i>Journal of Applied Physics</i>, 2004, 5715–21. <a href=\"https://doi.org/10.1063/1.1703827\">https://doi.org/10.1063/1.1703827</a>.","short":"K.H. Schmidt, C. Bock, M. Versen, U. Kunze, D. Reuter, A.D. Wieck, Journal of Applied Physics (2004) 5715–5721.","ieee":"K. H. Schmidt, C. Bock, M. Versen, U. Kunze, D. Reuter, and A. D. Wieck, “Capacitance and tunneling spectroscopy of InAs quantum dots,” <i>Journal of Applied Physics</i>, pp. 5715–5721, 2004.","apa":"Schmidt, K. H., Bock, C., Versen, M., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2004). Capacitance and tunneling spectroscopy of InAs quantum dots. <i>Journal of Applied Physics</i>, 5715–5721. <a href=\"https://doi.org/10.1063/1.1703827\">https://doi.org/10.1063/1.1703827</a>"},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-03-27T12:14:53Z"},{"citation":{"bibtex":"@article{Dimopoulos_Gieres_Wecker_Wiese_Sacher_2004, title={Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes}, volume={96}, DOI={<a href=\"https://doi.org/10.1063/1.1808899\">10.1063/1.1808899</a>}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Dimopoulos, T. and Gieres, G. and Wecker, J. and Wiese, N. and Sacher, Marc}, year={2004}, pages={6382–6386} }","ama":"Dimopoulos T, Gieres G, Wecker J, Wiese N, Sacher M. Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes. <i>Journal of Applied Physics</i>. 2004;96(11):6382-6386. doi:<a href=\"https://doi.org/10.1063/1.1808899\">10.1063/1.1808899</a>","mla":"Dimopoulos, T., et al. “Thermal Annealing of Junctions with Amorphous and Polycrystalline Ferromagnetic Electrodes.” <i>Journal of Applied Physics</i>, vol. 96, no. 11, AIP Publishing, 2004, pp. 6382–86, doi:<a href=\"https://doi.org/10.1063/1.1808899\">10.1063/1.1808899</a>.","short":"T. Dimopoulos, G. Gieres, J. Wecker, N. Wiese, M. Sacher, Journal of Applied Physics 96 (2004) 6382–6386.","chicago":"Dimopoulos, T., G. Gieres, J. Wecker, N. Wiese, and Marc Sacher. “Thermal Annealing of Junctions with Amorphous and Polycrystalline Ferromagnetic Electrodes.” <i>Journal of Applied Physics</i> 96, no. 11 (2004): 6382–86. <a href=\"https://doi.org/10.1063/1.1808899\">https://doi.org/10.1063/1.1808899</a>.","ieee":"T. Dimopoulos, G. Gieres, J. Wecker, N. Wiese, and M. Sacher, “Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes,” <i>Journal of Applied Physics</i>, vol. 96, no. 11, pp. 6382–6386, 2004, doi: <a href=\"https://doi.org/10.1063/1.1808899\">10.1063/1.1808899</a>.","apa":"Dimopoulos, T., Gieres, G., Wecker, J., Wiese, N., &#38; Sacher, M. (2004). Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes. <i>Journal of Applied Physics</i>, <i>96</i>(11), 6382–6386. <a href=\"https://doi.org/10.1063/1.1808899\">https://doi.org/10.1063/1.1808899</a>"},"volume":96,"user_id":"26883","_id":"29692","publisher":"AIP Publishing","page":"6382-6386","status":"public","department":[{"_id":"15"}],"type":"journal_article","keyword":["General Physics and Astronomy"],"date_created":"2022-01-31T10:23:21Z","issue":"11","publication":"Journal of Applied Physics","doi":"10.1063/1.1808899","language":[{"iso":"eng"}],"intvolume":"        96","date_updated":"2024-04-23T12:21:43Z","publication_status":"published","author":[{"full_name":"Dimopoulos, T.","last_name":"Dimopoulos","first_name":"T."},{"last_name":"Gieres","first_name":"G.","full_name":"Gieres, G."},{"full_name":"Wecker, J.","first_name":"J.","last_name":"Wecker"},{"first_name":"N.","last_name":"Wiese","full_name":"Wiese, N."},{"id":"26883","full_name":"Sacher, Marc","orcid":"0000-0001-6217-336X","last_name":"Sacher","first_name":"Marc"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"title":"Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes","year":"2004"},{"citation":{"chicago":"Meier, Cedrik, Dirk Reuter, Christof Riedesel, and Andreas D. Wieck. “Fabrication of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor Heterostructures.” <i>Journal of Applied Physics</i> 93, no. 10 (2003): 6100–6106. <a href=\"https://doi.org/10.1063/1.1563032\">https://doi.org/10.1063/1.1563032</a>.","short":"C. Meier, D. Reuter, C. Riedesel, A.D. Wieck, Journal of Applied Physics 93 (2003) 6100–6106.","ieee":"C. Meier, D. Reuter, C. Riedesel, and A. D. Wieck, “Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures,” <i>Journal of Applied Physics</i>, vol. 93, no. 10, pp. 6100–6106, 2003.","apa":"Meier, C., Reuter, D., Riedesel, C., &#38; Wieck, A. D. (2003). Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures. <i>Journal of Applied Physics</i>, <i>93</i>(10), 6100–6106. <a href=\"https://doi.org/10.1063/1.1563032\">https://doi.org/10.1063/1.1563032</a>","bibtex":"@article{Meier_Reuter_Riedesel_Wieck_2003, title={Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures}, volume={93}, DOI={<a href=\"https://doi.org/10.1063/1.1563032\">10.1063/1.1563032</a>}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Meier, Cedrik and Reuter, Dirk and Riedesel, Christof and Wieck, Andreas D.}, year={2003}, pages={6100–6106} }","ama":"Meier C, Reuter D, Riedesel C, Wieck AD. Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures. <i>Journal of Applied Physics</i>. 2003;93(10):6100-6106. doi:<a href=\"https://doi.org/10.1063/1.1563032\">10.1063/1.1563032</a>","mla":"Meier, Cedrik, et al. “Fabrication of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor Heterostructures.” <i>Journal of Applied Physics</i>, vol. 93, no. 10, AIP Publishing, 2003, pp. 6100–06, doi:<a href=\"https://doi.org/10.1063/1.1563032\">10.1063/1.1563032</a>."},"page":"6100-6106","publisher":"AIP Publishing","_id":"7681","user_id":"20798","volume":93,"status":"public","date_created":"2019-02-13T14:49:57Z","type":"journal_article","department":[{"_id":"15"}],"publication":"Journal of Applied Physics","issue":"10","extern":"1","language":[{"iso":"eng"}],"doi":"10.1063/1.1563032","year":"2003","title":"Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures","author":[{"id":"20798","last_name":"Meier","first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik"},{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"last_name":"Riedesel","first_name":"Christof","full_name":"Riedesel, Christof"},{"full_name":"Wieck, Andreas D.","first_name":"Andreas D.","last_name":"Wieck"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","date_updated":"2022-01-06T07:03:43Z","intvolume":"        93"},{"publication_status":"published","date_updated":"2022-01-06T07:03:59Z","author":[{"first_name":"Cedrik","last_name":"Meier","full_name":"Meier, Cedrik"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"last_name":"Riedesel","first_name":"Christof","full_name":"Riedesel, Christof"},{"full_name":"Wieck, Andreas D.","last_name":"Wieck","first_name":"Andreas D."}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"title":"Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures","year":"2003","status":"public","user_id":"42514","doi":"10.1063/1.1563032","_id":"8720","language":[{"iso":"eng"}],"page":"6100-6106","citation":{"mla":"Meier, Cedrik, et al. “Fabrication of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor Heterostructures.” <i>Journal of Applied Physics</i>, 2003, pp. 6100–06, doi:<a href=\"https://doi.org/10.1063/1.1563032\">10.1063/1.1563032</a>.","bibtex":"@article{Meier_Reuter_Riedesel_Wieck_2003, title={Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures}, DOI={<a href=\"https://doi.org/10.1063/1.1563032\">10.1063/1.1563032</a>}, journal={Journal of Applied Physics}, author={Meier, Cedrik and Reuter, Dirk and Riedesel, Christof and Wieck, Andreas D.}, year={2003}, pages={6100–6106} }","ama":"Meier C, Reuter D, Riedesel C, Wieck AD. Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures. <i>Journal of Applied Physics</i>. 2003:6100-6106. doi:<a href=\"https://doi.org/10.1063/1.1563032\">10.1063/1.1563032</a>","ieee":"C. Meier, D. Reuter, C. Riedesel, and A. D. Wieck, “Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures,” <i>Journal of Applied Physics</i>, pp. 6100–6106, 2003.","apa":"Meier, C., Reuter, D., Riedesel, C., &#38; Wieck, A. D. (2003). Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures. <i>Journal of Applied Physics</i>, 6100–6106. <a href=\"https://doi.org/10.1063/1.1563032\">https://doi.org/10.1063/1.1563032</a>","short":"C. Meier, D. Reuter, C. Riedesel, A.D. Wieck, Journal of Applied Physics (2003) 6100–6106.","chicago":"Meier, Cedrik, Dirk Reuter, Christof Riedesel, and Andreas D. Wieck. “Fabrication of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor Heterostructures.” <i>Journal of Applied Physics</i>, 2003, 6100–6106. <a href=\"https://doi.org/10.1063/1.1563032\">https://doi.org/10.1063/1.1563032</a>."},"publication":"Journal of Applied Physics","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-03-28T14:54:53Z"}]