[{"year":"2002","citation":{"ama":"Reuter D, Versen M, Schneider MD, Wieck AD. Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities. <i>Journal of Applied Physics</i>. 2002:321-325. doi:<a href=\"https://doi.org/10.1063/1.373660\">10.1063/1.373660</a>","chicago":"Reuter, Dirk, M. Versen, M. D. Schneider, and A. D. Wieck. “Increased Mobility Anisotropy in Selectively Doped AlxGa1−xAs/GaAs Heterostructures with High Electron Densities.” <i>Journal of Applied Physics</i>, 2002, 321–25. <a href=\"https://doi.org/10.1063/1.373660\">https://doi.org/10.1063/1.373660</a>.","ieee":"D. Reuter, M. Versen, M. D. Schneider, and A. D. Wieck, “Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities,” <i>Journal of Applied Physics</i>, pp. 321–325, 2002.","mla":"Reuter, Dirk, et al. “Increased Mobility Anisotropy in Selectively Doped AlxGa1−xAs/GaAs Heterostructures with High Electron Densities.” <i>Journal of Applied Physics</i>, 2002, pp. 321–25, doi:<a href=\"https://doi.org/10.1063/1.373660\">10.1063/1.373660</a>.","bibtex":"@article{Reuter_Versen_Schneider_Wieck_2002, title={Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities}, DOI={<a href=\"https://doi.org/10.1063/1.373660\">10.1063/1.373660</a>}, journal={Journal of Applied Physics}, author={Reuter, Dirk and Versen, M. and Schneider, M. D. and Wieck, A. D.}, year={2002}, pages={321–325} }","short":"D. Reuter, M. Versen, M.D. Schneider, A.D. Wieck, Journal of Applied Physics (2002) 321–325.","apa":"Reuter, D., Versen, M., Schneider, M. D., &#38; Wieck, A. D. (2002). Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities. <i>Journal of Applied Physics</i>, 321–325. <a href=\"https://doi.org/10.1063/1.373660\">https://doi.org/10.1063/1.373660</a>"},"page":"321-325","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"title":"Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities","doi":"10.1063/1.373660","date_updated":"2022-01-06T07:04:00Z","author":[{"first_name":"Dirk","id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter"},{"full_name":"Versen, M.","last_name":"Versen","first_name":"M."},{"first_name":"M. D.","full_name":"Schneider, M. D.","last_name":"Schneider"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."}],"date_created":"2019-04-01T07:33:21Z","status":"public","type":"journal_article","publication":"Journal of Applied Physics","language":[{"iso":"eng"}],"_id":"8763","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}]},{"publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"citation":{"ama":"Reuter D, Gerth G, Kirschner J. Modifying diffusion anisotropies: Cap layer induced changes in spreading anisotropies. <i>Journal of Applied Physics</i>. 2002:5374-5377. doi:<a href=\"https://doi.org/10.1063/1.366304\">10.1063/1.366304</a>","chicago":"Reuter, Dirk, G. Gerth, and J. Kirschner. “Modifying Diffusion Anisotropies: Cap Layer Induced Changes in Spreading Anisotropies.” <i>Journal of Applied Physics</i>, 2002, 5374–77. <a href=\"https://doi.org/10.1063/1.366304\">https://doi.org/10.1063/1.366304</a>.","ieee":"D. Reuter, G. Gerth, and J. Kirschner, “Modifying diffusion anisotropies: Cap layer induced changes in spreading anisotropies,” <i>Journal of Applied Physics</i>, pp. 5374–5377, 2002.","apa":"Reuter, D., Gerth, G., &#38; Kirschner, J. (2002). Modifying diffusion anisotropies: Cap layer induced changes in spreading anisotropies. <i>Journal of Applied Physics</i>, 5374–5377. <a href=\"https://doi.org/10.1063/1.366304\">https://doi.org/10.1063/1.366304</a>","mla":"Reuter, Dirk, et al. “Modifying Diffusion Anisotropies: Cap Layer Induced Changes in Spreading Anisotropies.” <i>Journal of Applied Physics</i>, 2002, pp. 5374–77, doi:<a href=\"https://doi.org/10.1063/1.366304\">10.1063/1.366304</a>.","short":"D. Reuter, G. Gerth, J. Kirschner, Journal of Applied Physics (2002) 5374–5377.","bibtex":"@article{Reuter_Gerth_Kirschner_2002, title={Modifying diffusion anisotropies: Cap layer induced changes in spreading anisotropies}, DOI={<a href=\"https://doi.org/10.1063/1.366304\">10.1063/1.366304</a>}, journal={Journal of Applied Physics}, author={Reuter, Dirk and Gerth, G. and Kirschner, J.}, year={2002}, pages={5374–5377} }"},"page":"5374-5377","year":"2002","author":[{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"last_name":"Gerth","full_name":"Gerth, G.","first_name":"G."},{"first_name":"J.","full_name":"Kirschner, J.","last_name":"Kirschner"}],"date_created":"2019-04-01T08:43:12Z","date_updated":"2022-01-06T07:04:00Z","doi":"10.1063/1.366304","title":"Modifying diffusion anisotropies: Cap layer induced changes in spreading anisotropies","type":"journal_article","publication":"Journal of Applied Physics","status":"public","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"8788","language":[{"iso":"eng"}]},{"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","issue":"11","year":"1999","page":"6605-6607","intvolume":"        86","citation":{"bibtex":"@article{Eshlaghi_Meier_Suter_Reuter_Wieck_1999, title={Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells}, volume={86}, DOI={<a href=\"https://doi.org/10.1063/1.371720\">10.1063/1.371720</a>}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Eshlaghi, Soheyla and Meier, Cedrik and Suter, Dieter and Reuter, D. and Wieck, A. D.}, year={1999}, pages={6605–6607} }","short":"S. Eshlaghi, C. Meier, D. Suter, D. Reuter, A.D. Wieck, Journal of Applied Physics 86 (1999) 6605–6607.","mla":"Eshlaghi, Soheyla, et al. “Depth Profile of the Implantation-Enhanced Intermixing of Ga+ Focused Ion Beam in AlAs/GaAs Quantum Wells.” <i>Journal of Applied Physics</i>, vol. 86, no. 11, AIP Publishing, 1999, pp. 6605–07, doi:<a href=\"https://doi.org/10.1063/1.371720\">10.1063/1.371720</a>.","apa":"Eshlaghi, S., Meier, C., Suter, D., Reuter, D., &#38; Wieck, A. D. (1999). Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells. <i>Journal of Applied Physics</i>, <i>86</i>(11), 6605–6607. <a href=\"https://doi.org/10.1063/1.371720\">https://doi.org/10.1063/1.371720</a>","ieee":"S. Eshlaghi, C. Meier, D. Suter, D. Reuter, and A. D. Wieck, “Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells,” <i>Journal of Applied Physics</i>, vol. 86, no. 11, pp. 6605–6607, 1999.","chicago":"Eshlaghi, Soheyla, Cedrik Meier, Dieter Suter, D. Reuter, and A. D. Wieck. “Depth Profile of the Implantation-Enhanced Intermixing of Ga+ Focused Ion Beam in AlAs/GaAs Quantum Wells.” <i>Journal of Applied Physics</i> 86, no. 11 (1999): 6605–7. <a href=\"https://doi.org/10.1063/1.371720\">https://doi.org/10.1063/1.371720</a>.","ama":"Eshlaghi S, Meier C, Suter D, Reuter D, Wieck AD. Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells. <i>Journal of Applied Physics</i>. 1999;86(11):6605-6607. doi:<a href=\"https://doi.org/10.1063/1.371720\">10.1063/1.371720</a>"},"publisher":"AIP Publishing","date_updated":"2022-01-06T07:03:44Z","volume":86,"date_created":"2019-02-13T14:59:37Z","author":[{"full_name":"Eshlaghi, Soheyla","last_name":"Eshlaghi","first_name":"Soheyla"},{"first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","id":"20798","full_name":"Meier, Cedrik"},{"first_name":"Dieter","full_name":"Suter, Dieter","last_name":"Suter"},{"last_name":"Reuter","full_name":"Reuter, D.","first_name":"D."},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"}],"title":"Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells","doi":"10.1063/1.371720","publication":"Journal of Applied Physics","type":"journal_article","status":"public","_id":"7693","department":[{"_id":"15"}],"user_id":"20798","language":[{"iso":"eng"}],"extern":"1"},{"type":"journal_article","status":"public","_id":"40322","user_id":"254","department":[{"_id":"313"}],"extern":"1","publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"citation":{"apa":"Molsen, H., &#38; Kitzerow, H.-S. (1994). Bistability in polymer‐dispersed ferroelectric liquid crystals. <i>Journal of Applied Physics</i>, <i>75</i>(2), 710–716. <a href=\"https://doi.org/10.1063/1.356471\">https://doi.org/10.1063/1.356471</a>","short":"H. Molsen, H.-S. Kitzerow, Journal of Applied Physics 75 (1994) 710–716.","mla":"Molsen, Henning, and Heinz-Siegfried Kitzerow. “Bistability in Polymer‐dispersed Ferroelectric Liquid Crystals.” <i>Journal of Applied Physics</i>, vol. 75, no. 2, AIP Publishing, 1994, pp. 710–16, doi:<a href=\"https://doi.org/10.1063/1.356471\">10.1063/1.356471</a>.","bibtex":"@article{Molsen_Kitzerow_1994, title={Bistability in polymer‐dispersed ferroelectric liquid crystals}, volume={75}, DOI={<a href=\"https://doi.org/10.1063/1.356471\">10.1063/1.356471</a>}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Molsen, Henning and Kitzerow, Heinz-Siegfried}, year={1994}, pages={710–716} }","ama":"Molsen H, Kitzerow H-S. Bistability in polymer‐dispersed ferroelectric liquid crystals. <i>Journal of Applied Physics</i>. 1994;75(2):710-716. doi:<a href=\"https://doi.org/10.1063/1.356471\">10.1063/1.356471</a>","chicago":"Molsen, Henning, and Heinz-Siegfried Kitzerow. “Bistability in Polymer‐dispersed Ferroelectric Liquid Crystals.” <i>Journal of Applied Physics</i> 75, no. 2 (1994): 710–16. <a href=\"https://doi.org/10.1063/1.356471\">https://doi.org/10.1063/1.356471</a>.","ieee":"H. Molsen and H.-S. Kitzerow, “Bistability in polymer‐dispersed ferroelectric liquid crystals,” <i>Journal of Applied Physics</i>, vol. 75, no. 2, pp. 710–716, 1994, doi: <a href=\"https://doi.org/10.1063/1.356471\">10.1063/1.356471</a>."},"intvolume":"        75","page":"710-716","date_updated":"2023-01-26T11:49:09Z","author":[{"first_name":"Henning","full_name":"Molsen, Henning","last_name":"Molsen"},{"last_name":"Kitzerow","id":"254","full_name":"Kitzerow, Heinz-Siegfried","first_name":"Heinz-Siegfried"}],"volume":75,"doi":"10.1063/1.356471","publication":"Journal of Applied Physics","keyword":["General Physics and Astronomy"],"language":[{"iso":"eng"}],"issue":"2","year":"1994","publisher":"AIP Publishing","date_created":"2023-01-26T11:06:23Z","title":"Bistability in polymer‐dispersed ferroelectric liquid crystals"}]