---
_id: '47994'
abstract:
- lang: eng
text: Coherent nonlinear optical μ-spectroscopy is a frequently used tool in modern
material science as it is sensitive to many different local observables, which
comprise, among others, crystal symmetry and vibrational properties. The richness
in information, however, may come with challenges in data interpretation, as one
has to disentangle the many different effects like multiple reflections, phase
jumps at interfaces, or the influence of the Guoy-phase. In order to facilitate
interpretation, the work presented here proposes an easy-to-use semi-analytical
modeling Ansatz, which bases upon known analytical solutions using Gaussian beams.
Specifically, we apply this Ansatz to compute nonlinear optical responses of (thin
film) optical materials. We try to conserve the meaning of intuitive parameters
like the Gouy-phase and the nonlinear coherent interaction length. In particular,
the concept of coherence length is extended, which is a must when using focal
beams. The model is subsequently applied to exemplary cases of second- and third-harmonic
generation. We observe a very good agreement with experimental data, and furthermore,
despite the constraints and limits of the analytical Ansatz, our model performs
similarly well as when using more rigorous simulations. However, it outperforms
the latter in terms of computational power, requiring more than three orders less
computational time and less performant computer systems.
article_number: '123105'
article_type: original
author:
- first_name: Kai J.
full_name: Spychala, Kai J.
last_name: Spychala
- first_name: Zeeshan H.
full_name: Amber, Zeeshan H.
last_name: Amber
- first_name: Lukas M.
full_name: Eng, Lukas M.
last_name: Eng
- first_name: Michael
full_name: Rüsing, Michael
id: '22501'
last_name: Rüsing
orcid: 0000-0003-4682-4577
citation:
ama: 'Spychala KJ, Amber ZH, Eng LM, Rüsing M. Modeling nonlinear optical interactions
of focused beams in bulk crystals and thin films: A phenomenological approach.
Journal of Applied Physics. 2023;133(12). doi:10.1063/5.0136252'
apa: 'Spychala, K. J., Amber, Z. H., Eng, L. M., & Rüsing, M. (2023). Modeling
nonlinear optical interactions of focused beams in bulk crystals and thin films:
A phenomenological approach. Journal of Applied Physics, 133(12),
Article 123105. https://doi.org/10.1063/5.0136252'
bibtex: '@article{Spychala_Amber_Eng_Rüsing_2023, title={Modeling nonlinear optical
interactions of focused beams in bulk crystals and thin films: A phenomenological
approach}, volume={133}, DOI={10.1063/5.0136252},
number={12123105}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Spychala, Kai J. and Amber, Zeeshan H. and Eng, Lukas M. and Rüsing, Michael},
year={2023} }'
chicago: 'Spychala, Kai J., Zeeshan H. Amber, Lukas M. Eng, and Michael Rüsing.
“Modeling Nonlinear Optical Interactions of Focused Beams in Bulk Crystals and
Thin Films: A Phenomenological Approach.” Journal of Applied Physics 133,
no. 12 (2023). https://doi.org/10.1063/5.0136252.'
ieee: 'K. J. Spychala, Z. H. Amber, L. M. Eng, and M. Rüsing, “Modeling nonlinear
optical interactions of focused beams in bulk crystals and thin films: A phenomenological
approach,” Journal of Applied Physics, vol. 133, no. 12, Art. no. 123105,
2023, doi: 10.1063/5.0136252.'
mla: 'Spychala, Kai J., et al. “Modeling Nonlinear Optical Interactions of Focused
Beams in Bulk Crystals and Thin Films: A Phenomenological Approach.” Journal
of Applied Physics, vol. 133, no. 12, 123105, AIP Publishing, 2023, doi:10.1063/5.0136252.'
short: K.J. Spychala, Z.H. Amber, L.M. Eng, M. Rüsing, Journal of Applied Physics
133 (2023).
date_created: 2023-10-11T09:09:00Z
date_updated: 2023-10-11T16:10:54Z
doi: 10.1063/5.0136252
extern: '1'
intvolume: ' 133'
issue: '12'
keyword:
- General Physics and Astronomy
language:
- iso: eng
main_file_link:
- open_access: '1'
url: ' https://doi.org/10.1063/5.0136252'
oa: '1'
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
quality_controlled: '1'
status: public
title: 'Modeling nonlinear optical interactions of focused beams in bulk crystals
and thin films: A phenomenological approach'
type: journal_article
user_id: '22501'
volume: 133
year: '2023'
...
---
_id: '46573'
abstract:
- lang: eng
text: 'An ultra-fast change of the absorption onset for zincblende gallium-nitride
(zb-GaN) (fundamental bandgap: 3.23 eV) is observed by investigating the imaginary
part of the dielectric function using time-dependent femtosecond pump–probe spectroscopic
ellipsometry between 2.9 and 3.7 eV. The 266 nm (4.66 eV) pump pulses induce a
large electron–hole pair concentration up to 4×1020cm−3, which shift the transition
energy between conduction and valence bands due to many-body effects up to ≈500 meV.
Here, the absorption onset increases due to band filling while the bandgap renormalization
at the same time decreases the bandgap. Additionally, the absorption of the pump-beam
creates a free-carrier profile within the 605 nm zb-GaN layer with high free-carrier
concentrations at the surface, and low concentrations at the interface to the
substrate. This leads to varying optical properties from the sample surface (high
transition energy) to substrate (low transition energy), which are taken into
account by grading analysis for an accurate description of the experimental data.
For this, a model describing the time- and position-dependent free-carrier concentration
is formulated by considering the relaxation, recombination, and diffusion of those
carriers. We provide a quantitative analysis of optical experimental data (ellipsometric
angles Ψ and Δ) as well as a plot for the time-dependent change of the imaginary
part of the dielectric function.'
author:
- first_name: Elias
full_name: Baron, Elias
last_name: Baron
- first_name: Rüdiger
full_name: Goldhahn, Rüdiger
last_name: Goldhahn
- first_name: Shirly
full_name: Espinoza, Shirly
last_name: Espinoza
- first_name: Martin
full_name: Zahradník, Martin
last_name: Zahradník
- first_name: Mateusz
full_name: Rebarz, Mateusz
last_name: Rebarz
- first_name: Jakob
full_name: Andreasson, Jakob
last_name: Andreasson
- first_name: Michael
full_name: Deppe, Michael
last_name: Deppe
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Martin
full_name: Feneberg, Martin
last_name: Feneberg
citation:
ama: Baron E, Goldhahn R, Espinoza S, et al. Time-resolved pump–probe spectroscopic
ellipsometry of cubic GaN. I. Determination of the dielectric function. Journal
of Applied Physics. 2023;134(7). doi:10.1063/5.0153091
apa: Baron, E., Goldhahn, R., Espinoza, S., Zahradník, M., Rebarz, M., Andreasson,
J., Deppe, M., As, D. J., & Feneberg, M. (2023). Time-resolved pump–probe
spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function.
Journal of Applied Physics, 134(7). https://doi.org/10.1063/5.0153091
bibtex: '@article{Baron_Goldhahn_Espinoza_Zahradník_Rebarz_Andreasson_Deppe_As_Feneberg_2023,
title={Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination
of the dielectric function}, volume={134}, DOI={10.1063/5.0153091},
number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Baron, Elias and Goldhahn, Rüdiger and Espinoza, Shirly and Zahradník,
Martin and Rebarz, Mateusz and Andreasson, Jakob and Deppe, Michael and As, Donat
Josef and Feneberg, Martin}, year={2023} }'
chicago: Baron, Elias, Rüdiger Goldhahn, Shirly Espinoza, Martin Zahradník, Mateusz
Rebarz, Jakob Andreasson, Michael Deppe, Donat Josef As, and Martin Feneberg.
“Time-Resolved Pump–Probe Spectroscopic Ellipsometry of Cubic GaN. I. Determination
of the Dielectric Function.” Journal of Applied Physics 134, no. 7 (2023).
https://doi.org/10.1063/5.0153091.
ieee: 'E. Baron et al., “Time-resolved pump–probe spectroscopic ellipsometry
of cubic GaN. I. Determination of the dielectric function,” Journal of Applied
Physics, vol. 134, no. 7, 2023, doi: 10.1063/5.0153091.'
mla: Baron, Elias, et al. “Time-Resolved Pump–Probe Spectroscopic Ellipsometry of
Cubic GaN. I. Determination of the Dielectric Function.” Journal of Applied
Physics, vol. 134, no. 7, AIP Publishing, 2023, doi:10.1063/5.0153091.
short: E. Baron, R. Goldhahn, S. Espinoza, M. Zahradník, M. Rebarz, J. Andreasson,
M. Deppe, D.J. As, M. Feneberg, Journal of Applied Physics 134 (2023).
date_created: 2023-08-18T08:17:41Z
date_updated: 2023-10-09T09:17:15Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/5.0153091
intvolume: ' 134'
issue: '7'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination
of the dielectric function
type: journal_article
user_id: '14931'
volume: 134
year: '2023'
...
---
_id: '34056'
abstract:
- lang: eng
text: ' A process sequence enabling the large-area fabrication of nanopillar-patterned
semiconductor templates for selective-area heteroepitaxy is developed. Herein,
the nanopillar tops surrounded by a SiNx mask film serve
as nanoscale growth areas. The molecular beam epitaxial growth of InAs on such
patterned GaAs[Formula: see text]A templates is investigated by means of electron
microscopy. It is found that defect-free nanoscale InAs islands grow selectively
on the nanopillar tops at a substrate temperature of 425 °C. High-angle annular
dark-field scanning transmission electron microscopy imaging reveals that for
a growth temperature of 400 °C, the InAs islands show a tendency to form wurtzite
phase arms extending along the lateral [Formula: see text] directions from the
central zinc blende region of the islands. This is ascribed to a temporary self-catalyzed
vapor–liquid–solid growth on [Formula: see text] B facets, which leads to a kinetically
induced preference for the nucleation of the wurtzite phase driven by the local,
instantaneous V/III ratio, and to a concomitant reduction of surface energy of
the nanoscale diameter arms. '
article_number: '185701'
author:
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Vinay S.
full_name: Kunnathully, Vinay S.
last_name: Kunnathully
- first_name: Akshay Kumar
full_name: Verma, Akshay Kumar
id: '72998'
last_name: Verma
- first_name: Timo
full_name: Langer, Timo
last_name: Langer
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Björn
full_name: Büker, Björn
last_name: Büker
- first_name: Andreas
full_name: Hütten, Andreas
last_name: Hütten
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: Riedl T, Kunnathully VS, Verma AK, et al. Selective area heteroepitaxy of InAs
nanostructures on nanopillar-patterned GaAs(111)A. Journal of Applied Physics.
2022;132(18). doi:10.1063/5.0121559
apa: Riedl, T., Kunnathully, V. S., Verma, A. K., Langer, T., Reuter, D., Büker,
B., Hütten, A., & Lindner, J. (2022). Selective area heteroepitaxy of InAs
nanostructures on nanopillar-patterned GaAs(111)A. Journal of Applied Physics,
132(18), Article 185701. https://doi.org/10.1063/5.0121559
bibtex: '@article{Riedl_Kunnathully_Verma_Langer_Reuter_Büker_Hütten_Lindner_2022,
title={Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned
GaAs(111)A}, volume={132}, DOI={10.1063/5.0121559},
number={18185701}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Riedl, Thomas and Kunnathully, Vinay S. and Verma, Akshay Kumar and Langer,
Timo and Reuter, Dirk and Büker, Björn and Hütten, Andreas and Lindner, Jörg},
year={2022} }'
chicago: Riedl, Thomas, Vinay S. Kunnathully, Akshay Kumar Verma, Timo Langer, Dirk
Reuter, Björn Büker, Andreas Hütten, and Jörg Lindner. “Selective Area Heteroepitaxy
of InAs Nanostructures on Nanopillar-Patterned GaAs(111)A.” Journal of Applied
Physics 132, no. 18 (2022). https://doi.org/10.1063/5.0121559.
ieee: 'T. Riedl et al., “Selective area heteroepitaxy of InAs nanostructures
on nanopillar-patterned GaAs(111)A,” Journal of Applied Physics, vol. 132,
no. 18, Art. no. 185701, 2022, doi: 10.1063/5.0121559.'
mla: Riedl, Thomas, et al. “Selective Area Heteroepitaxy of InAs Nanostructures
on Nanopillar-Patterned GaAs(111)A.” Journal of Applied Physics, vol. 132,
no. 18, 185701, AIP Publishing, 2022, doi:10.1063/5.0121559.
short: T. Riedl, V.S. Kunnathully, A.K. Verma, T. Langer, D. Reuter, B. Büker, A.
Hütten, J. Lindner, Journal of Applied Physics 132 (2022).
date_created: 2022-11-10T14:19:21Z
date_updated: 2023-01-10T12:08:26Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/5.0121559
intvolume: ' 132'
issue: '18'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned
GaAs(111)A
type: journal_article
user_id: '77496'
volume: 132
year: '2022'
...
---
_id: '47984'
abstract:
- lang: eng
text: Recent analyses by polarization resolved second-harmonic (SH) microscopy have
demonstrated that ferroelectric (FE) domain walls (DWs) can possess non-Ising
wall characteristics and topological nature. These analyses rely on locally analyzing
the properties, directionality, and magnitude of the second-order nonlinear tensor.
However, when inspecting FE DWs with SH microscopy, a manifold of different effects
may contribute to the observed signal difference between domains and DWs, i.e.,
far-field interference, Čerenkov-type phase-matching (CSHG), and changes in the
aforementioned local nonlinear optical properties. They all might be present at
the same time and, therefore, require careful interpretation and separation. In
this work, we demonstrate how the particularly strong Čerenkov-type contrast can
selectively be blocked using dark- and bright-field SH microscopy. Based on this
approach, we show that other contrast mechanisms emerge that were previously overlayed
by CSHG but can now be readily selected through the appropriate experimental geometry.
Using the methods presented, we show that the strength of the CSHG contrast compared
to the other mechanisms is approximately 22 times higher. This work lays the foundation
for the in-depth analysis of FE DW topologies by SH microscopy.
article_type: original
author:
- first_name: Peter A.
full_name: Hegarty, Peter A.
last_name: Hegarty
- first_name: Henrik
full_name: Beccard, Henrik
last_name: Beccard
- first_name: Lukas M.
full_name: Eng, Lukas M.
last_name: Eng
- first_name: Michael
full_name: Rüsing, Michael
id: '22501'
last_name: Rüsing
orcid: 0000-0003-4682-4577
citation:
ama: 'Hegarty PA, Beccard H, Eng LM, Rüsing M. Turn all the lights off: Bright-
and dark-field second-harmonic microscopy to select contrast mechanisms for ferroelectric
domain walls. Journal of Applied Physics. 2022;131(24). doi:10.1063/5.0094988'
apa: 'Hegarty, P. A., Beccard, H., Eng, L. M., & Rüsing, M. (2022). Turn all
the lights off: Bright- and dark-field second-harmonic microscopy to select contrast
mechanisms for ferroelectric domain walls. Journal of Applied Physics,
131(24). https://doi.org/10.1063/5.0094988'
bibtex: '@article{Hegarty_Beccard_Eng_Rüsing_2022, title={Turn all the lights off:
Bright- and dark-field second-harmonic microscopy to select contrast mechanisms
for ferroelectric domain walls}, volume={131}, DOI={10.1063/5.0094988},
number={24}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Hegarty, Peter A. and Beccard, Henrik and Eng, Lukas M. and Rüsing, Michael},
year={2022} }'
chicago: 'Hegarty, Peter A., Henrik Beccard, Lukas M. Eng, and Michael Rüsing. “Turn
All the Lights off: Bright- and Dark-Field Second-Harmonic Microscopy to Select
Contrast Mechanisms for Ferroelectric Domain Walls.” Journal of Applied Physics
131, no. 24 (2022). https://doi.org/10.1063/5.0094988.'
ieee: 'P. A. Hegarty, H. Beccard, L. M. Eng, and M. Rüsing, “Turn all the lights
off: Bright- and dark-field second-harmonic microscopy to select contrast mechanisms
for ferroelectric domain walls,” Journal of Applied Physics, vol. 131,
no. 24, 2022, doi: 10.1063/5.0094988.'
mla: 'Hegarty, Peter A., et al. “Turn All the Lights off: Bright- and Dark-Field
Second-Harmonic Microscopy to Select Contrast Mechanisms for Ferroelectric Domain
Walls.” Journal of Applied Physics, vol. 131, no. 24, AIP Publishing, 2022,
doi:10.1063/5.0094988.'
short: P.A. Hegarty, H. Beccard, L.M. Eng, M. Rüsing, Journal of Applied Physics
131 (2022).
date_created: 2023-10-11T08:53:25Z
date_updated: 2023-10-11T08:53:55Z
doi: 10.1063/5.0094988
extern: '1'
funded_apc: '1'
intvolume: ' 131'
issue: '24'
keyword:
- General Physics and Astronomy
language:
- iso: eng
main_file_link:
- open_access: '1'
url: ' https://doi.org/10.1063/5.0094988'
oa: '1'
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
quality_controlled: '1'
status: public
title: 'Turn all the lights off: Bright- and dark-field second-harmonic microscopy
to select contrast mechanisms for ferroelectric domain walls'
type: journal_article
user_id: '22501'
volume: 131
year: '2022'
...
---
_id: '47989'
abstract:
- lang: eng
text: Thin-film materials from μm thickness down to single-atomic-layered 2D materials
play a central role in many novel electronic and optical applications. Coherent,
nonlinear optical (NLO) μ-spectroscopy offers insight into the local thickness,
stacking order, symmetry, or electronic and vibrational properties. Thin films
and 2D materials are usually supported on multi-layered substrates leading to
(multi-)reflections, interference, or phase jumps at interfaces during μ-spectroscopy,
which all can make the interpretation of experiments particularly challenging.
The disentanglement of the influence parameters can be achieved via rigorous theoretical
analysis. In this work, we compare two self-developed modeling approaches, a semi-analytical
and a fully vectorial model, to experiments carried out in thin-film geometry
for two archetypal NLO processes, second-harmonic and third-harmonic generation.
In particular, we demonstrate that thin-film interference and phase matching do
heavily influence the signal strength. Furthermore, we work out key differences
between three and four photon processes, such as the role of the Gouy-phase shift
and the focal position. Last, we can show that a relatively simple semi-analytical
model, despite its limitations, is able to accurately describe experiments at
a significantly lower computational cost as compared to a full vectorial modeling.
This study lays the groundwork for performing quantitative NLO μ-spectroscopy
on thin films and 2D materials, as it identifies and quantifies the impact of
the corresponding sample and setup parameters on the NLO signal, in order to distinguish
them from genuine material properties.<
article_number: '213102'
article_type: original
author:
- first_name: Zeeshan H.
full_name: Amber, Zeeshan H.
last_name: Amber
- first_name: Kai J.
full_name: Spychala, Kai J.
last_name: Spychala
- first_name: Lukas M.
full_name: Eng, Lukas M.
last_name: Eng
- first_name: Michael
full_name: Rüsing, Michael
id: '22501'
last_name: Rüsing
orcid: 0000-0003-4682-4577
citation:
ama: Amber ZH, Spychala KJ, Eng LM, Rüsing M. Nonlinear optical interactions in
focused beams and nanosized structures. Journal of Applied Physics. 2022;132(21).
doi:10.1063/5.0125926
apa: Amber, Z. H., Spychala, K. J., Eng, L. M., & Rüsing, M. (2022). Nonlinear
optical interactions in focused beams and nanosized structures. Journal of
Applied Physics, 132(21), Article 213102. https://doi.org/10.1063/5.0125926
bibtex: '@article{Amber_Spychala_Eng_Rüsing_2022, title={Nonlinear optical interactions
in focused beams and nanosized structures}, volume={132}, DOI={10.1063/5.0125926},
number={21213102}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Amber, Zeeshan H. and Spychala, Kai J. and Eng, Lukas M. and Rüsing, Michael},
year={2022} }'
chicago: Amber, Zeeshan H., Kai J. Spychala, Lukas M. Eng, and Michael Rüsing. “Nonlinear
Optical Interactions in Focused Beams and Nanosized Structures.” Journal of
Applied Physics 132, no. 21 (2022). https://doi.org/10.1063/5.0125926.
ieee: 'Z. H. Amber, K. J. Spychala, L. M. Eng, and M. Rüsing, “Nonlinear optical
interactions in focused beams and nanosized structures,” Journal of Applied
Physics, vol. 132, no. 21, Art. no. 213102, 2022, doi: 10.1063/5.0125926.'
mla: Amber, Zeeshan H., et al. “Nonlinear Optical Interactions in Focused Beams
and Nanosized Structures.” Journal of Applied Physics, vol. 132, no. 21,
213102, AIP Publishing, 2022, doi:10.1063/5.0125926.
short: Z.H. Amber, K.J. Spychala, L.M. Eng, M. Rüsing, Journal of Applied Physics
132 (2022).
date_created: 2023-10-11T08:59:23Z
date_updated: 2023-10-11T09:01:37Z
doi: 10.1063/5.0125926
funded_apc: '1'
intvolume: ' 132'
issue: '21'
keyword:
- General Physics and Astronomy
language:
- iso: eng
main_file_link:
- open_access: '1'
url: ' https://doi.org/10.1063/5.0125926'
oa: '1'
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
quality_controlled: '1'
status: public
title: Nonlinear optical interactions in focused beams and nanosized structures
type: journal_article
user_id: '22501'
volume: 132
year: '2022'
...
---
_id: '47988'
abstract:
- lang: eng
text: Second harmonic (SH) microscopy represents a powerful tool for the investigation
of crystalline systems, such as ferroelectrics and their domain walls (DWs). Under
the condition of normal dispersion, i.e., the refractive index at the SH wavelength
is larger as compared to the refractive index at the fundamental wavelength, n(2ω)>n(ω),
bulk crystals will generate no SH signal. Should the bulk, however, contain DWs,
an appreciable SH signal will still be detectable at the location of DWs stemming
from the Čerenkov mechanism. In this work, we demonstrate both how SH signals
are generated in bulk media and how the Čerenkov mechanism can be inhibited by
using anomalous dispersion, i.e., n(ω)Journal of Applied
Physics. 2022;132(21):214102. doi:10.1063/5.0115673
apa: Hegarty, P. A., Eng, L. M., & Rüsing, M. (2022). Tuning the Čerenkov second
harmonic contrast from ferroelectric domain walls via anomalous dispersion. Journal
of Applied Physics, 132(21), 214102. https://doi.org/10.1063/5.0115673
bibtex: '@article{Hegarty_Eng_Rüsing_2022, title={Tuning the Čerenkov second harmonic
contrast from ferroelectric domain walls via anomalous dispersion}, volume={132},
DOI={10.1063/5.0115673}, number={21},
journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Hegarty,
Peter A. and Eng, Lukas M. and Rüsing, Michael}, year={2022}, pages={214102} }'
chicago: 'Hegarty, Peter A., Lukas M. Eng, and Michael Rüsing. “Tuning the Čerenkov
Second Harmonic Contrast from Ferroelectric Domain Walls via Anomalous Dispersion.”
Journal of Applied Physics 132, no. 21 (2022): 214102. https://doi.org/10.1063/5.0115673.'
ieee: 'P. A. Hegarty, L. M. Eng, and M. Rüsing, “Tuning the Čerenkov second harmonic
contrast from ferroelectric domain walls via anomalous dispersion,” Journal
of Applied Physics, vol. 132, no. 21, p. 214102, 2022, doi: 10.1063/5.0115673.'
mla: Hegarty, Peter A., et al. “Tuning the Čerenkov Second Harmonic Contrast from
Ferroelectric Domain Walls via Anomalous Dispersion.” Journal of Applied Physics,
vol. 132, no. 21, AIP Publishing, 2022, p. 214102, doi:10.1063/5.0115673.
short: P.A. Hegarty, L.M. Eng, M. Rüsing, Journal of Applied Physics 132 (2022)
214102.
date_created: 2023-10-11T08:57:55Z
date_updated: 2023-10-11T08:58:50Z
doi: 10.1063/5.0115673
extern: '1'
funded_apc: '1'
intvolume: ' 132'
issue: '21'
keyword:
- General Physics and Astronomy
language:
- iso: eng
main_file_link:
- open_access: '1'
url: ' https://doi.org/10.1063/5.0115673'
oa: '1'
page: '214102'
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
quality_controlled: '1'
status: public
title: Tuning the Čerenkov second harmonic contrast from ferroelectric domain walls
via anomalous dispersion
type: journal_article
user_id: '22501'
volume: 132
year: '2022'
...
---
_id: '46011'
article_number: '014102'
author:
- first_name: Dawei
full_name: Zhang, Dawei
last_name: Zhang
- first_name: Daniel
full_name: Sando, Daniel
last_name: Sando
- first_name: Ying
full_name: Pan, Ying
id: '100383'
last_name: Pan
- first_name: Pankaj
full_name: Sharma, Pankaj
last_name: Sharma
- first_name: Jan
full_name: Seidel, Jan
last_name: Seidel
citation:
ama: Zhang D, Sando D, Pan Y, Sharma P, Seidel J. Robust ferroelectric polarization
retention in harsh environments through engineered domain wall pinning. Journal
of Applied Physics. 2021;129(1). doi:10.1063/5.0029620
apa: Zhang, D., Sando, D., Pan, Y., Sharma, P., & Seidel, J. (2021). Robust
ferroelectric polarization retention in harsh environments through engineered
domain wall pinning. Journal of Applied Physics, 129(1), Article
014102. https://doi.org/10.1063/5.0029620
bibtex: '@article{Zhang_Sando_Pan_Sharma_Seidel_2021, title={Robust ferroelectric
polarization retention in harsh environments through engineered domain wall pinning},
volume={129}, DOI={10.1063/5.0029620},
number={1014102}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Zhang, Dawei and Sando, Daniel and Pan, Ying and Sharma, Pankaj and Seidel,
Jan}, year={2021} }'
chicago: Zhang, Dawei, Daniel Sando, Ying Pan, Pankaj Sharma, and Jan Seidel. “Robust
Ferroelectric Polarization Retention in Harsh Environments through Engineered
Domain Wall Pinning.” Journal of Applied Physics 129, no. 1 (2021). https://doi.org/10.1063/5.0029620.
ieee: 'D. Zhang, D. Sando, Y. Pan, P. Sharma, and J. Seidel, “Robust ferroelectric
polarization retention in harsh environments through engineered domain wall pinning,”
Journal of Applied Physics, vol. 129, no. 1, Art. no. 014102, 2021, doi:
10.1063/5.0029620.'
mla: Zhang, Dawei, et al. “Robust Ferroelectric Polarization Retention in Harsh
Environments through Engineered Domain Wall Pinning.” Journal of Applied Physics,
vol. 129, no. 1, 014102, AIP Publishing, 2021, doi:10.1063/5.0029620.
short: D. Zhang, D. Sando, Y. Pan, P. Sharma, J. Seidel, Journal of Applied Physics
129 (2021).
date_created: 2023-07-11T14:50:35Z
date_updated: 2023-07-11T16:39:06Z
doi: 10.1063/5.0029620
extern: '1'
intvolume: ' 129'
issue: '1'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Robust ferroelectric polarization retention in harsh environments through engineered
domain wall pinning
type: journal_article
user_id: '100383'
volume: 129
year: '2021'
...
---
_id: '47973'
abstract:
- lang: eng
text: Thin-film lithium niobate (TFLN) in the form of x- or z-cut lithium-niobate-on-insulator
has attracted considerable interest as a very promising and novel platform for
developing integrated optoelectronic (nano)devices and exploring fundamental research.
Here, we investigate the coherent interaction length lc of optical second-harmonic
generation (SHG) microscopy in such samples, that are purposely prepared into
a wedge shape, in order to elegantly tune the geometrical confinement from bulk
thicknesses down to approximately 50 nm. SHG microscopy is a very powerful and
non-invasive tool for the investigation of structural properties in the biological
and solid-state sciences, especially for visualizing and analyzing ferroelectric
domains and domain walls. However, unlike in bulk lithium niobate (LN), SHG microscopy
in TFLN is impacted by interfacial reflections and resonant enhancement, both
of which rely on film thickness and substrate material. In this paper, we show
that the dominant SHG contribution measured on TFLN in backreflection is the co-propagating
phase-matched SHG signal and not the counter-propagating SHG portion as is the
case for bulk LN samples. Moreover, lc depends on the incident pump laser wavelength
(sample dispersion) but also on the numerical aperture of the focussing objective
in use. These experimental findings on x- and z-cut TFLN are excellently backed
up by our advanced numerical simulations.
article_type: original
author:
- first_name: Zeeshan H.
full_name: Amber, Zeeshan H.
last_name: Amber
- first_name: Benjamin
full_name: Kirbus, Benjamin
last_name: Kirbus
- first_name: Lukas M.
full_name: Eng, Lukas M.
last_name: Eng
- first_name: Michael
full_name: Rüsing, Michael
id: '22501'
last_name: Rüsing
orcid: 0000-0003-4682-4577
citation:
ama: Amber ZH, Kirbus B, Eng LM, Rüsing M. Quantifying the coherent interaction
length of second-harmonic microscopy in lithium niobate confined nanostructures.
Journal of Applied Physics. 2021;130(13):133102. doi:10.1063/5.0058996
apa: Amber, Z. H., Kirbus, B., Eng, L. M., & Rüsing, M. (2021). Quantifying
the coherent interaction length of second-harmonic microscopy in lithium niobate
confined nanostructures. Journal of Applied Physics, 130(13), 133102.
https://doi.org/10.1063/5.0058996
bibtex: '@article{Amber_Kirbus_Eng_Rüsing_2021, title={Quantifying the coherent
interaction length of second-harmonic microscopy in lithium niobate confined nanostructures},
volume={130}, DOI={10.1063/5.0058996},
number={13}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Amber, Zeeshan H. and Kirbus, Benjamin and Eng, Lukas M. and Rüsing, Michael},
year={2021}, pages={133102} }'
chicago: 'Amber, Zeeshan H., Benjamin Kirbus, Lukas M. Eng, and Michael Rüsing.
“Quantifying the Coherent Interaction Length of Second-Harmonic Microscopy in
Lithium Niobate Confined Nanostructures.” Journal of Applied Physics 130,
no. 13 (2021): 133102. https://doi.org/10.1063/5.0058996.'
ieee: 'Z. H. Amber, B. Kirbus, L. M. Eng, and M. Rüsing, “Quantifying the coherent
interaction length of second-harmonic microscopy in lithium niobate confined nanostructures,”
Journal of Applied Physics, vol. 130, no. 13, p. 133102, 2021, doi: 10.1063/5.0058996.'
mla: Amber, Zeeshan H., et al. “Quantifying the Coherent Interaction Length of Second-Harmonic
Microscopy in Lithium Niobate Confined Nanostructures.” Journal of Applied
Physics, vol. 130, no. 13, AIP Publishing, 2021, p. 133102, doi:10.1063/5.0058996.
short: Z.H. Amber, B. Kirbus, L.M. Eng, M. Rüsing, Journal of Applied Physics 130
(2021) 133102.
date_created: 2023-10-11T08:29:03Z
date_updated: 2023-10-11T08:29:44Z
doi: 10.1063/5.0058996
extern: '1'
intvolume: ' 130'
issue: '13'
keyword:
- General Physics and Astronomy
language:
- iso: eng
page: '133102'
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
quality_controlled: '1'
status: public
title: Quantifying the coherent interaction length of second-harmonic microscopy in
lithium niobate confined nanostructures
type: journal_article
user_id: '22501'
volume: 130
year: '2021'
...
---
_id: '20644'
abstract:
- lang: eng
text: Plasmonic nanoantennas for visible and infrared radiation strongly improve
the interaction of light with the matter on the nanoscale due to their strong
near-field enhancement. In this study, we investigate a double-resonant plasmonic
nanoantenna, which makes use of plasmonic field enhancement, enhanced outcoupling
of second harmonic light, and resonant lattice effects. Using this design, we
demonstrate how the efficiency of second harmonic generation can be increased
significantly by fully embedding the nanoantennas into nonlinear dielectric material
ZnO, instead of placing them on the surface. Investigating two different processes,
we found that the best fabrication route is embedding the gold nanoantennas in
ZnO using an MBE overgrowth process where a thin ZnO layer was deposited on nanoantennas
fabricated on a ZnO substrate. In addition, second harmonic generation measurements
show that the embedding leads to an enhancement compared to the emission of nanoantennas
placed on the ZnO substrate surface. These promising results facilitate further
research to determine the influence of the periodicity of the nanoantenna arrangement
of the resulting SHG signal.
article_number: '043107'
article_type: original
author:
- first_name: Ruth
full_name: Volmert, Ruth
last_name: Volmert
- first_name: Nils
full_name: Weber, Nils
last_name: Weber
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Volmert R, Weber N, Meier C. Nanoantennas embedded in zinc oxide for second
harmonic generation enhancement. Journal of Applied Physics. 2020;128(4).
doi:10.1063/5.0012813
apa: Volmert, R., Weber, N., & Meier, C. (2020). Nanoantennas embedded in zinc
oxide for second harmonic generation enhancement. Journal of Applied Physics,
128(4). https://doi.org/10.1063/5.0012813
bibtex: '@article{Volmert_Weber_Meier_2020, title={Nanoantennas embedded in zinc
oxide for second harmonic generation enhancement}, volume={128}, DOI={10.1063/5.0012813},
number={4043107}, journal={Journal of Applied Physics}, author={Volmert, Ruth
and Weber, Nils and Meier, Cedrik}, year={2020} }'
chicago: Volmert, Ruth, Nils Weber, and Cedrik Meier. “Nanoantennas Embedded in
Zinc Oxide for Second Harmonic Generation Enhancement.” Journal of Applied
Physics 128, no. 4 (2020). https://doi.org/10.1063/5.0012813.
ieee: R. Volmert, N. Weber, and C. Meier, “Nanoantennas embedded in zinc oxide for
second harmonic generation enhancement,” Journal of Applied Physics, vol.
128, no. 4, 2020.
mla: Volmert, Ruth, et al. “Nanoantennas Embedded in Zinc Oxide for Second Harmonic
Generation Enhancement.” Journal of Applied Physics, vol. 128, no. 4, 043107,
2020, doi:10.1063/5.0012813.
short: R. Volmert, N. Weber, C. Meier, Journal of Applied Physics 128 (2020).
date_created: 2020-12-02T12:57:58Z
date_updated: 2022-01-06T06:54:31Z
department:
- _id: '230'
- _id: '429'
doi: 10.1063/5.0012813
external_id:
isi:
- '000557311900001'
intvolume: ' 128'
isi: '1'
issue: '4'
language:
- iso: eng
project:
- _id: '53'
name: TRR 142
- _id: '55'
name: TRR 142 - Project Area B
- _id: '66'
name: TRR 142 - Subproject B1
- _id: '56'
name: TRR 142 - Project Area C
- _id: '75'
name: TRR 142 - Subproject C5
publication: Journal of Applied Physics
publication_identifier:
eissn:
- 1089-7550
issn:
- 0021-8979
publication_status: published
quality_controlled: '1'
status: public
title: Nanoantennas embedded in zinc oxide for second harmonic generation enhancement
type: journal_article
user_id: '20798'
volume: 128
year: '2020'
...
---
_id: '22053'
article_number: '023103'
author:
- first_name: K. J.
full_name: Spychala, K. J.
last_name: Spychala
- first_name: P.
full_name: Mackwitz, P.
last_name: Mackwitz
- first_name: A.
full_name: Widhalm, A.
last_name: Widhalm
- first_name: G.
full_name: Berth, G.
last_name: Berth
- first_name: A.
full_name: Zrenner, A.
last_name: Zrenner
citation:
ama: Spychala KJ, Mackwitz P, Widhalm A, Berth G, Zrenner A. Spatially resolved
light field analysis of the second-harmonic signal of χ(2)-materials in the tight
focusing regime. Journal of Applied Physics. 2020. doi:10.1063/1.5133476
apa: Spychala, K. J., Mackwitz, P., Widhalm, A., Berth, G., & Zrenner, A. (2020).
Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials
in the tight focusing regime. Journal of Applied Physics. https://doi.org/10.1063/1.5133476
bibtex: '@article{Spychala_Mackwitz_Widhalm_Berth_Zrenner_2020, title={Spatially
resolved light field analysis of the second-harmonic signal of χ(2)-materials
in the tight focusing regime}, DOI={10.1063/1.5133476},
number={023103}, journal={Journal of Applied Physics}, author={Spychala, K. J.
and Mackwitz, P. and Widhalm, A. and Berth, G. and Zrenner, A.}, year={2020} }'
chicago: Spychala, K. J., P. Mackwitz, A. Widhalm, G. Berth, and A. Zrenner. “Spatially
Resolved Light Field Analysis of the Second-Harmonic Signal of χ(2)-Materials
in the Tight Focusing Regime.” Journal of Applied Physics, 2020. https://doi.org/10.1063/1.5133476.
ieee: K. J. Spychala, P. Mackwitz, A. Widhalm, G. Berth, and A. Zrenner, “Spatially
resolved light field analysis of the second-harmonic signal of χ(2)-materials
in the tight focusing regime,” Journal of Applied Physics, 2020.
mla: Spychala, K. J., et al. “Spatially Resolved Light Field Analysis of the Second-Harmonic
Signal of χ(2)-Materials in the Tight Focusing Regime.” Journal of Applied
Physics, 023103, 2020, doi:10.1063/1.5133476.
short: K.J. Spychala, P. Mackwitz, A. Widhalm, G. Berth, A. Zrenner, Journal of
Applied Physics (2020).
date_created: 2021-05-09T06:25:14Z
date_updated: 2022-01-06T06:55:23Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.5133476
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials
in the tight focusing regime
type: journal_article
user_id: '606'
year: '2020'
...
---
_id: '22054'
article_number: '023103'
author:
- first_name: K. J.
full_name: Spychala, K. J.
last_name: Spychala
- first_name: P.
full_name: Mackwitz, P.
last_name: Mackwitz
- first_name: A.
full_name: Widhalm, A.
last_name: Widhalm
- first_name: Gerhard
full_name: Berth, Gerhard
last_name: Berth
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: Spychala KJ, Mackwitz P, Widhalm A, Berth G, Zrenner A. Spatially resolved
light field analysis of the second-harmonic signal of χ(2)-materials in the tight
focusing regime. Journal of Applied Physics. 2020. doi:10.1063/1.5133476
apa: Spychala, K. J., Mackwitz, P., Widhalm, A., Berth, G., & Zrenner, A. (2020).
Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials
in the tight focusing regime. Journal of Applied Physics. https://doi.org/10.1063/1.5133476
bibtex: '@article{Spychala_Mackwitz_Widhalm_Berth_Zrenner_2020, title={Spatially
resolved light field analysis of the second-harmonic signal of χ(2)-materials
in the tight focusing regime}, DOI={10.1063/1.5133476},
number={023103}, journal={Journal of Applied Physics}, author={Spychala, K. J.
and Mackwitz, P. and Widhalm, A. and Berth, Gerhard and Zrenner, Artur}, year={2020}
}'
chicago: Spychala, K. J., P. Mackwitz, A. Widhalm, Gerhard Berth, and Artur Zrenner.
“Spatially Resolved Light Field Analysis of the Second-Harmonic Signal of χ(2)-Materials
in the Tight Focusing Regime.” Journal of Applied Physics, 2020. https://doi.org/10.1063/1.5133476.
ieee: K. J. Spychala, P. Mackwitz, A. Widhalm, G. Berth, and A. Zrenner, “Spatially
resolved light field analysis of the second-harmonic signal of χ(2)-materials
in the tight focusing regime,” Journal of Applied Physics, 2020.
mla: Spychala, K. J., et al. “Spatially Resolved Light Field Analysis of the Second-Harmonic
Signal of χ(2)-Materials in the Tight Focusing Regime.” Journal of Applied
Physics, 023103, 2020, doi:10.1063/1.5133476.
short: K.J. Spychala, P. Mackwitz, A. Widhalm, G. Berth, A. Zrenner, Journal of
Applied Physics (2020).
date_created: 2021-05-09T06:27:56Z
date_updated: 2022-01-06T06:55:23Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.5133476
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials
in the tight focusing regime
type: journal_article
user_id: '606'
year: '2020'
...
---
_id: '22056'
article_number: '234102'
author:
- first_name: K. J.
full_name: Spychala, K. J.
last_name: Spychala
- first_name: P.
full_name: Mackwitz, P.
last_name: Mackwitz
- first_name: Michael
full_name: Rüsing, Michael
id: '22501'
last_name: Rüsing
orcid: 0000-0003-4682-4577
- first_name: A.
full_name: Widhalm, A.
last_name: Widhalm
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: Christine
full_name: Silberhorn, Christine
id: '26263'
last_name: Silberhorn
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: 'Spychala KJ, Mackwitz P, Rüsing M, et al. Nonlinear focal mapping of ferroelectric
domain walls in LiNbO3: Analysis of the SHG microscopy contrast mechanism. Journal
of Applied Physics. Published online 2020. doi:10.1063/5.0025284'
apa: 'Spychala, K. J., Mackwitz, P., Rüsing, M., Widhalm, A., Berth, G., Silberhorn,
C., & Zrenner, A. (2020). Nonlinear focal mapping of ferroelectric domain
walls in LiNbO3: Analysis of the SHG microscopy contrast mechanism. Journal
of Applied Physics, Article 234102. https://doi.org/10.1063/5.0025284'
bibtex: '@article{Spychala_Mackwitz_Rüsing_Widhalm_Berth_Silberhorn_Zrenner_2020,
title={Nonlinear focal mapping of ferroelectric domain walls in LiNbO3: Analysis
of the SHG microscopy contrast mechanism}, DOI={10.1063/5.0025284},
number={234102}, journal={Journal of Applied Physics}, author={Spychala, K. J.
and Mackwitz, P. and Rüsing, Michael and Widhalm, A. and Berth, Gerhard and Silberhorn,
Christine and Zrenner, Artur}, year={2020} }'
chicago: 'Spychala, K. J., P. Mackwitz, Michael Rüsing, A. Widhalm, Gerhard Berth,
Christine Silberhorn, and Artur Zrenner. “Nonlinear Focal Mapping of Ferroelectric
Domain Walls in LiNbO3: Analysis of the SHG Microscopy Contrast Mechanism.” Journal
of Applied Physics, 2020. https://doi.org/10.1063/5.0025284.'
ieee: 'K. J. Spychala et al., “Nonlinear focal mapping of ferroelectric domain
walls in LiNbO3: Analysis of the SHG microscopy contrast mechanism,” Journal
of Applied Physics, Art. no. 234102, 2020, doi: 10.1063/5.0025284.'
mla: 'Spychala, K. J., et al. “Nonlinear Focal Mapping of Ferroelectric Domain Walls
in LiNbO3: Analysis of the SHG Microscopy Contrast Mechanism.” Journal of Applied
Physics, 234102, 2020, doi:10.1063/5.0025284.'
short: K.J. Spychala, P. Mackwitz, M. Rüsing, A. Widhalm, G. Berth, C. Silberhorn,
A. Zrenner, Journal of Applied Physics (2020).
date_created: 2021-05-09T06:33:08Z
date_updated: 2023-10-09T08:07:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/5.0025284
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: 'Nonlinear focal mapping of ferroelectric domain walls in LiNbO3: Analysis
of the SHG microscopy contrast mechanism'
type: journal_article
user_id: '14931'
year: '2020'
...
---
_id: '47955'
abstract:
- lang: eng
text: Quasi-phase-matched grating structures in lithium niobate waveguides with
sub-micrometer periodicities will benefit the development of short-wavelength
nonlinear optical devices. Here, we report on the reproducible formation of periodically
poled domains in x-cut single-crystalline thin-film lithium niobate with periodicities
as short as 600 nm. Shaped single-voltage poling pulses were applied to electrode
structures that were fabricated by a combination of electron-beam and direct-writing
laser lithography. Evidence of successful poling with good quality was obtained
through second-harmonic microscopy and piezoresponse force microscopy imaging.
For the sub-micrometer period structures, we observed patterns with a double periodicity
formed by domain interactions and features with sizes <200 nm.
article_number: '193104'
article_type: original
author:
- first_name: Jie
full_name: Zhao, Jie
last_name: Zhao
- first_name: Michael
full_name: Rüsing, Michael
id: '22501'
last_name: Rüsing
orcid: 0000-0003-4682-4577
- first_name: Matthias
full_name: Roeper, Matthias
last_name: Roeper
- first_name: Lukas M.
full_name: Eng, Lukas M.
last_name: Eng
- first_name: Shayan
full_name: Mookherjea, Shayan
last_name: Mookherjea
citation:
ama: Zhao J, Rüsing M, Roeper M, Eng LM, Mookherjea S. Poling thin-film x-cut lithium
niobate for quasi-phase matching with sub-micrometer periodicity. Journal of
Applied Physics. 2020;127(19). doi:10.1063/1.5143266
apa: Zhao, J., Rüsing, M., Roeper, M., Eng, L. M., & Mookherjea, S. (2020).
Poling thin-film x-cut lithium niobate for quasi-phase matching with sub-micrometer
periodicity. Journal of Applied Physics, 127(19), Article 193104.
https://doi.org/10.1063/1.5143266
bibtex: '@article{Zhao_Rüsing_Roeper_Eng_Mookherjea_2020, title={Poling thin-film
x-cut lithium niobate for quasi-phase matching with sub-micrometer periodicity},
volume={127}, DOI={10.1063/1.5143266},
number={19193104}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Zhao, Jie and Rüsing, Michael and Roeper, Matthias and Eng, Lukas M. and
Mookherjea, Shayan}, year={2020} }'
chicago: Zhao, Jie, Michael Rüsing, Matthias Roeper, Lukas M. Eng, and Shayan Mookherjea.
“Poling Thin-Film x-Cut Lithium Niobate for Quasi-Phase Matching with Sub-Micrometer
Periodicity.” Journal of Applied Physics 127, no. 19 (2020). https://doi.org/10.1063/1.5143266.
ieee: 'J. Zhao, M. Rüsing, M. Roeper, L. M. Eng, and S. Mookherjea, “Poling thin-film
x-cut lithium niobate for quasi-phase matching with sub-micrometer periodicity,”
Journal of Applied Physics, vol. 127, no. 19, Art. no. 193104, 2020, doi:
10.1063/1.5143266.'
mla: Zhao, Jie, et al. “Poling Thin-Film x-Cut Lithium Niobate for Quasi-Phase Matching
with Sub-Micrometer Periodicity.” Journal of Applied Physics, vol. 127,
no. 19, 193104, AIP Publishing, 2020, doi:10.1063/1.5143266.
short: J. Zhao, M. Rüsing, M. Roeper, L.M. Eng, S. Mookherjea, Journal of Applied
Physics 127 (2020).
date_created: 2023-10-11T08:06:39Z
date_updated: 2023-10-11T08:07:28Z
doi: 10.1063/1.5143266
intvolume: ' 127'
issue: '19'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Poling thin-film x-cut lithium niobate for quasi-phase matching with sub-micrometer
periodicity
type: journal_article
user_id: '22501'
volume: 127
year: '2020'
...
---
_id: '8646'
article_number: '095703'
author:
- first_name: M.
full_name: Deppe, M.
last_name: Deppe
- first_name: J. W.
full_name: Gerlach, J. W.
last_name: Gerlach
- first_name: S.
full_name: Shvarkov, S.
last_name: Shvarkov
- first_name: D.
full_name: Rogalla, D.
last_name: Rogalla
- first_name: H.-W.
full_name: Becker, H.-W.
last_name: Becker
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Deppe M, Gerlach JW, Shvarkov S, et al. Germanium doping of cubic GaN grown
by molecular beam epitaxy. Journal of Applied Physics. 2019. doi:10.1063/1.5066095
apa: Deppe, M., Gerlach, J. W., Shvarkov, S., Rogalla, D., Becker, H.-W., Reuter,
D., & As, D. J. (2019). Germanium doping of cubic GaN grown by molecular beam
epitaxy. Journal of Applied Physics. https://doi.org/10.1063/1.5066095
bibtex: '@article{Deppe_Gerlach_Shvarkov_Rogalla_Becker_Reuter_As_2019, title={Germanium
doping of cubic GaN grown by molecular beam epitaxy}, DOI={10.1063/1.5066095},
number={095703}, journal={Journal of Applied Physics}, author={Deppe, M. and Gerlach,
J. W. and Shvarkov, S. and Rogalla, D. and Becker, H.-W. and Reuter, Dirk and
As, Donat Josef}, year={2019} }'
chicago: Deppe, M., J. W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, Dirk Reuter,
and Donat Josef As. “Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy.”
Journal of Applied Physics, 2019. https://doi.org/10.1063/1.5066095.
ieee: M. Deppe et al., “Germanium doping of cubic GaN grown by molecular
beam epitaxy,” Journal of Applied Physics, 2019.
mla: Deppe, M., et al. “Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy.”
Journal of Applied Physics, 095703, 2019, doi:10.1063/1.5066095.
short: M. Deppe, J.W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, D. Reuter,
D.J. As, Journal of Applied Physics (2019).
date_created: 2019-03-26T12:48:57Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '230'
- _id: '429'
doi: 10.1063/1.5066095
language:
- iso: eng
project:
- _id: '67'
name: TRR 142 - Subproject B2
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: Germanium doping of cubic GaN grown by molecular beam epitaxy
type: journal_article
user_id: '14'
year: '2019'
...
---
_id: '9698'
article_number: '073103'
author:
- first_name: C.
full_name: Golla, C.
last_name: Golla
- first_name: N.
full_name: Weber, N.
last_name: Weber
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Golla C, Weber N, Meier C. Zinc oxide based dielectric nanoantennas for efficient
nonlinear frequency conversion. Journal of Applied Physics. 2019;125(7).
doi:10.1063/1.5082720
apa: Golla, C., Weber, N., & Meier, C. (2019). Zinc oxide based dielectric nanoantennas
for efficient nonlinear frequency conversion. Journal of Applied Physics,
125(7). https://doi.org/10.1063/1.5082720
bibtex: '@article{Golla_Weber_Meier_2019, title={Zinc oxide based dielectric nanoantennas
for efficient nonlinear frequency conversion}, volume={125}, DOI={10.1063/1.5082720},
number={7073103}, journal={Journal of Applied Physics}, author={Golla, C. and
Weber, N. and Meier, Cedrik}, year={2019} }'
chicago: Golla, C., N. Weber, and Cedrik Meier. “Zinc Oxide Based Dielectric Nanoantennas
for Efficient Nonlinear Frequency Conversion.” Journal of Applied Physics
125, no. 7 (2019). https://doi.org/10.1063/1.5082720.
ieee: C. Golla, N. Weber, and C. Meier, “Zinc oxide based dielectric nanoantennas
for efficient nonlinear frequency conversion,” Journal of Applied Physics,
vol. 125, no. 7, 2019.
mla: Golla, C., et al. “Zinc Oxide Based Dielectric Nanoantennas for Efficient Nonlinear
Frequency Conversion.” Journal of Applied Physics, vol. 125, no. 7, 073103,
2019, doi:10.1063/1.5082720.
short: C. Golla, N. Weber, C. Meier, Journal of Applied Physics 125 (2019).
date_created: 2019-05-08T07:06:11Z
date_updated: 2022-01-06T07:04:18Z
department:
- _id: '15'
- _id: '35'
- _id: '287'
- _id: '230'
doi: 10.1063/1.5082720
intvolume: ' 125'
issue: '7'
language:
- iso: eng
project:
- _id: '53'
name: TRR 142
- _id: '55'
name: TRR 142 - Project Area B
- _id: '66'
name: TRR 142 - Subproject B1
- _id: '56'
name: TRR 142 - Project Area C
- _id: '75'
name: TRR 142 - Subproject C5
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: Zinc oxide based dielectric nanoantennas for efficient nonlinear frequency
conversion
type: journal_article
user_id: '20798'
volume: 125
year: '2019'
...
---
_id: '9897'
article_number: '193104'
author:
- first_name: Maximilian
full_name: Protte, Maximilian
last_name: Protte
- first_name: Nils
full_name: Weber, Nils
last_name: Weber
- first_name: Christian
full_name: Golla, Christian
last_name: Golla
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Protte M, Weber N, Golla C, Zentgraf T, Meier C. Strong nonlinear optical response
from ZnO by coupled and lattice-matched nanoantennas. Journal of Applied Physics.
2019;125. doi:10.1063/1.5093257
apa: Protte, M., Weber, N., Golla, C., Zentgraf, T., & Meier, C. (2019). Strong
nonlinear optical response from ZnO by coupled and lattice-matched nanoantennas.
Journal of Applied Physics, 125. https://doi.org/10.1063/1.5093257
bibtex: '@article{Protte_Weber_Golla_Zentgraf_Meier_2019, title={Strong nonlinear
optical response from ZnO by coupled and lattice-matched nanoantennas}, volume={125},
DOI={10.1063/1.5093257}, number={193104},
journal={Journal of Applied Physics}, author={Protte, Maximilian and Weber, Nils
and Golla, Christian and Zentgraf, Thomas and Meier, Cedrik}, year={2019} }'
chicago: Protte, Maximilian, Nils Weber, Christian Golla, Thomas Zentgraf, and Cedrik
Meier. “Strong Nonlinear Optical Response from ZnO by Coupled and Lattice-Matched
Nanoantennas.” Journal of Applied Physics 125 (2019). https://doi.org/10.1063/1.5093257.
ieee: M. Protte, N. Weber, C. Golla, T. Zentgraf, and C. Meier, “Strong nonlinear
optical response from ZnO by coupled and lattice-matched nanoantennas,” Journal
of Applied Physics, vol. 125, 2019.
mla: Protte, Maximilian, et al. “Strong Nonlinear Optical Response from ZnO by Coupled
and Lattice-Matched Nanoantennas.” Journal of Applied Physics, vol. 125,
193104, 2019, doi:10.1063/1.5093257.
short: M. Protte, N. Weber, C. Golla, T. Zentgraf, C. Meier, Journal of Applied
Physics 125 (2019).
date_created: 2019-05-21T08:35:49Z
date_updated: 2020-08-21T13:52:51Z
department:
- _id: '15'
- _id: '287'
- _id: '35'
- _id: '230'
- _id: '289'
doi: 10.1063/1.5093257
intvolume: ' 125'
language:
- iso: eng
project:
- _id: '53'
name: TRR 142
- _id: '55'
name: TRR 142 - Project Area B
- _id: '66'
name: TRR 142 - Subproject B1
- _id: '56'
name: TRR 142 - Project Area C
- _id: '75'
name: TRR 142 - Subproject C5
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: Strong nonlinear optical response from ZnO by coupled and lattice-matched nanoantennas
type: journal_article
user_id: '30525'
volume: 125
year: '2019'
...
---
_id: '13965'
article_number: '153901'
author:
- first_name: J. H.
full_name: Buß, J. H.
last_name: Buß
- first_name: T.
full_name: Schupp, T.
last_name: Schupp
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: D.
full_name: Hägele, D.
last_name: Hägele
- first_name: J.
full_name: Rudolph, J.
last_name: Rudolph
citation:
ama: Buß JH, Schupp T, As DJ, Hägele D, Rudolph J. Optical excitation density dependence
of spin dynamics in bulk cubic GaN. Journal of Applied Physics. 2019. doi:10.1063/1.5123914
apa: Buß, J. H., Schupp, T., As, D. J., Hägele, D., & Rudolph, J. (2019). Optical
excitation density dependence of spin dynamics in bulk cubic GaN. Journal of
Applied Physics. https://doi.org/10.1063/1.5123914
bibtex: '@article{Buß_Schupp_As_Hägele_Rudolph_2019, title={Optical excitation density
dependence of spin dynamics in bulk cubic GaN}, DOI={10.1063/1.5123914},
number={153901}, journal={Journal of Applied Physics}, author={Buß, J. H. and
Schupp, T. and As, Donat Josef and Hägele, D. and Rudolph, J.}, year={2019} }'
chicago: Buß, J. H., T. Schupp, Donat Josef As, D. Hägele, and J. Rudolph. “Optical
Excitation Density Dependence of Spin Dynamics in Bulk Cubic GaN.” Journal
of Applied Physics, 2019. https://doi.org/10.1063/1.5123914.
ieee: J. H. Buß, T. Schupp, D. J. As, D. Hägele, and J. Rudolph, “Optical excitation
density dependence of spin dynamics in bulk cubic GaN,” Journal of Applied
Physics, 2019.
mla: Buß, J. H., et al. “Optical Excitation Density Dependence of Spin Dynamics
in Bulk Cubic GaN.” Journal of Applied Physics, 153901, 2019, doi:10.1063/1.5123914.
short: J.H. Buß, T. Schupp, D.J. As, D. Hägele, J. Rudolph, Journal of Applied Physics
(2019).
date_created: 2019-10-22T12:26:02Z
date_updated: 2022-01-06T06:51:48Z
department:
- _id: '230'
- _id: '429'
doi: 10.1063/1.5123914
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: Optical excitation density dependence of spin dynamics in bulk cubic GaN
type: journal_article
user_id: '14'
year: '2019'
...
---
_id: '47951'
abstract:
- lang: eng
text: Thin film lithium niobate has been of great interest recently, and an understanding
of periodically poled thin films is crucial for both fundamental physics and device
developments. Second-harmonic (SH) microscopy allows for the noninvasive visualization
and analysis of ferroelectric domain structures and walls. While the technique
is well understood in bulk lithium niobate, SH microscopy in thin films is largely
influenced by interfacial reflections and resonant enhancements, which depend
on film thicknesses and substrate materials. We present a comprehensive analysis
of SH microscopy in x-cut lithium niobate thin films, based on a full three-dimensional
focus calculation and accounting for interface reflections. We show that the dominant
signal in backreflection originates from a copropagating phase-matched process
observed through reflections, rather than direct detection of the counterpropagating
signal as in bulk samples. We simulate the SH signatures of domain structures
by a simple model of the domain wall as an extensionless transition from a −χ(2)
to a +χ(2) region. This allows us to explain the main observation of domain structures
in the thin-film geometry, and, in particular, we show that the SH signal from
thin poled films allows to unambiguously distinguish areas, which are completely
or only partly inverted in depth.
article_number: '114105'
author:
- first_name: Michael
full_name: Rüsing, Michael
id: '22501'
last_name: Rüsing
orcid: 0000-0003-4682-4577
- first_name: J.
full_name: Zhao, J.
last_name: Zhao
- first_name: S.
full_name: Mookherjea, S.
last_name: Mookherjea
citation:
ama: 'Rüsing M, Zhao J, Mookherjea S. Second harmonic microscopy of poled x-cut
thin film lithium niobate: Understanding the contrast mechanism. Journal of
Applied Physics. 2019;126(11). doi:10.1063/1.5113727'
apa: 'Rüsing, M., Zhao, J., & Mookherjea, S. (2019). Second harmonic microscopy
of poled x-cut thin film lithium niobate: Understanding the contrast mechanism.
Journal of Applied Physics, 126(11), Article 114105. https://doi.org/10.1063/1.5113727'
bibtex: '@article{Rüsing_Zhao_Mookherjea_2019, title={Second harmonic microscopy
of poled x-cut thin film lithium niobate: Understanding the contrast mechanism},
volume={126}, DOI={10.1063/1.5113727},
number={11114105}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Rüsing, Michael and Zhao, J. and Mookherjea, S.}, year={2019} }'
chicago: 'Rüsing, Michael, J. Zhao, and S. Mookherjea. “Second Harmonic Microscopy
of Poled X-Cut Thin Film Lithium Niobate: Understanding the Contrast Mechanism.”
Journal of Applied Physics 126, no. 11 (2019). https://doi.org/10.1063/1.5113727.'
ieee: 'M. Rüsing, J. Zhao, and S. Mookherjea, “Second harmonic microscopy of poled
x-cut thin film lithium niobate: Understanding the contrast mechanism,” Journal
of Applied Physics, vol. 126, no. 11, Art. no. 114105, 2019, doi: 10.1063/1.5113727.'
mla: 'Rüsing, Michael, et al. “Second Harmonic Microscopy of Poled X-Cut Thin Film
Lithium Niobate: Understanding the Contrast Mechanism.” Journal of Applied
Physics, vol. 126, no. 11, 114105, AIP Publishing, 2019, doi:10.1063/1.5113727.'
short: M. Rüsing, J. Zhao, S. Mookherjea, Journal of Applied Physics 126 (2019).
date_created: 2023-10-11T07:47:03Z
date_updated: 2023-10-11T07:48:11Z
doi: 10.1063/1.5113727
extern: '1'
intvolume: ' 126'
issue: '11'
keyword:
- General Physics and Astronomy
language:
- iso: eng
main_file_link:
- open_access: '1'
url: https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.5113727/15233243/114105_1_online.pdf
oa: '1'
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: 'Second harmonic microscopy of poled x-cut thin film lithium niobate: Understanding
the contrast mechanism'
type: journal_article
user_id: '22501'
volume: 126
year: '2019'
...
---
_id: '1327'
article_number: '103101'
author:
- first_name: N.
full_name: Weber, N.
last_name: Weber
- first_name: S. P.
full_name: Hoffmann, S. P.
last_name: Hoffmann
- first_name: M.
full_name: Albert, M.
last_name: Albert
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Weber N, Hoffmann SP, Albert M, Zentgraf T, Meier C. Efficient frequency conversion
by combined photonic–plasmonic mode coupling. Journal of Applied Physics.
2018;123(10). doi:10.1063/1.5017010
apa: Weber, N., Hoffmann, S. P., Albert, M., Zentgraf, T., & Meier, C. (2018).
Efficient frequency conversion by combined photonic–plasmonic mode coupling. Journal
of Applied Physics, 123(10). https://doi.org/10.1063/1.5017010
bibtex: '@article{Weber_Hoffmann_Albert_Zentgraf_Meier_2018, title={Efficient frequency
conversion by combined photonic–plasmonic mode coupling}, volume={123}, DOI={10.1063/1.5017010}, number={10103101},
journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Weber,
N. and Hoffmann, S. P. and Albert, M. and Zentgraf, Thomas and Meier, Cedrik},
year={2018} }'
chicago: Weber, N., S. P. Hoffmann, M. Albert, Thomas Zentgraf, and Cedrik Meier.
“Efficient Frequency Conversion by Combined Photonic–Plasmonic Mode Coupling.”
Journal of Applied Physics 123, no. 10 (2018). https://doi.org/10.1063/1.5017010.
ieee: N. Weber, S. P. Hoffmann, M. Albert, T. Zentgraf, and C. Meier, “Efficient
frequency conversion by combined photonic–plasmonic mode coupling,” Journal
of Applied Physics, vol. 123, no. 10, 2018.
mla: Weber, N., et al. “Efficient Frequency Conversion by Combined Photonic–Plasmonic
Mode Coupling.” Journal of Applied Physics, vol. 123, no. 10, 103101, AIP
Publishing, 2018, doi:10.1063/1.5017010.
short: N. Weber, S.P. Hoffmann, M. Albert, T. Zentgraf, C. Meier, Journal of Applied
Physics 123 (2018).
date_created: 2018-03-16T08:41:10Z
date_updated: 2022-01-06T06:51:31Z
department:
- _id: '15'
- _id: '230'
- _id: '287'
- _id: '35'
- _id: '289'
doi: 10.1063/1.5017010
intvolume: ' 123'
issue: '10'
language:
- iso: eng
project:
- _id: '53'
name: TRR 142
- _id: '56'
name: TRR 142 - Project Area C
- _id: '75'
name: TRR 142 - Subproject C5
- _id: '54'
name: TRR 142 - Project Area A
- _id: '62'
name: TRR 142 - Subproject A5
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Efficient frequency conversion by combined photonic–plasmonic mode coupling
type: journal_article
user_id: '82901'
volume: 123
year: '2018'
...
---
_id: '22569'
article_number: '171912'
author:
- first_name: Vincent
full_name: Layes, Vincent
last_name: Layes
- first_name: Sascha
full_name: Monje, Sascha
last_name: Monje
- first_name: Carles
full_name: Corbella, Carles
last_name: Corbella
- first_name: Volker
full_name: Schulz-von der Gathen, Volker
last_name: Schulz-von der Gathen
- first_name: Achim
full_name: von Keudell, Achim
last_name: von Keudell
- first_name: Maria Teresa
full_name: de los Arcos de Pedro, Maria Teresa
id: '54556'
last_name: de los Arcos de Pedro
citation:
ama: 'Layes V, Monje S, Corbella C, Schulz-von der Gathen V, von Keudell A, de los
Arcos de Pedro MT. Composite targets in HiPIMS plasmas: Correlation of in-vacuum
XPS characterization and optical plasma diagnostics. Journal of Applied Physics.
Published online 2017. doi:10.1063/1.4977820'
apa: 'Layes, V., Monje, S., Corbella, C., Schulz-von der Gathen, V., von Keudell,
A., & de los Arcos de Pedro, M. T. (2017). Composite targets in HiPIMS plasmas:
Correlation of in-vacuum XPS characterization and optical plasma diagnostics.
Journal of Applied Physics, Article 171912. https://doi.org/10.1063/1.4977820'
bibtex: '@article{Layes_Monje_Corbella_Schulz-von der Gathen_von Keudell_de los
Arcos de Pedro_2017, title={Composite targets in HiPIMS plasmas: Correlation of
in-vacuum XPS characterization and optical plasma diagnostics}, DOI={10.1063/1.4977820},
number={171912}, journal={Journal of Applied Physics}, author={Layes, Vincent
and Monje, Sascha and Corbella, Carles and Schulz-von der Gathen, Volker and von
Keudell, Achim and de los Arcos de Pedro, Maria Teresa}, year={2017} }'
chicago: 'Layes, Vincent, Sascha Monje, Carles Corbella, Volker Schulz-von der Gathen,
Achim von Keudell, and Maria Teresa de los Arcos de Pedro. “Composite Targets
in HiPIMS Plasmas: Correlation of in-Vacuum XPS Characterization and Optical Plasma
Diagnostics.” Journal of Applied Physics, 2017. https://doi.org/10.1063/1.4977820.'
ieee: 'V. Layes, S. Monje, C. Corbella, V. Schulz-von der Gathen, A. von Keudell,
and M. T. de los Arcos de Pedro, “Composite targets in HiPIMS plasmas: Correlation
of in-vacuum XPS characterization and optical plasma diagnostics,” Journal
of Applied Physics, Art. no. 171912, 2017, doi: 10.1063/1.4977820.'
mla: 'Layes, Vincent, et al. “Composite Targets in HiPIMS Plasmas: Correlation of
in-Vacuum XPS Characterization and Optical Plasma Diagnostics.” Journal of
Applied Physics, 171912, 2017, doi:10.1063/1.4977820.'
short: V. Layes, S. Monje, C. Corbella, V. Schulz-von der Gathen, A. von Keudell,
M.T. de los Arcos de Pedro, Journal of Applied Physics (2017).
date_created: 2021-07-07T09:08:54Z
date_updated: 2023-01-24T08:14:07Z
department:
- _id: '302'
doi: 10.1063/1.4977820
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: 'Composite targets in HiPIMS plasmas: Correlation of in-vacuum XPS characterization
and optical plasma diagnostics'
type: journal_article
user_id: '54556'
year: '2017'
...
---
_id: '4815'
article_number: '103901'
author:
- first_name: V. A. N.
full_name: Righetti, V. A. N.
last_name: Righetti
- first_name: X.
full_name: Gratens, X.
last_name: Gratens
- first_name: V. A.
full_name: Chitta, V. A.
last_name: Chitta
- first_name: M. P. F.
full_name: de Godoy, M. P. F.
last_name: de Godoy
- first_name: A. D.
full_name: Rodrigues, A. D.
last_name: Rodrigues
- first_name: E.
full_name: Abramof, E.
last_name: Abramof
- first_name: J. F.
full_name: Dias, J. F.
last_name: Dias
- first_name: D.
full_name: Schikora, D.
last_name: Schikora
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
citation:
ama: Righetti VAN, Gratens X, Chitta VA, et al. Magnetic and structural properties
of Fe-implanted cubic GaN. Journal of Applied Physics. 2016;120(10). doi:10.1063/1.4962275
apa: Righetti, V. A. N., Gratens, X., Chitta, V. A., de Godoy, M. P. F., Rodrigues,
A. D., Abramof, E., … Lischka, K. (2016). Magnetic and structural properties of
Fe-implanted cubic GaN. Journal of Applied Physics, 120(10). https://doi.org/10.1063/1.4962275
bibtex: '@article{Righetti_Gratens_Chitta_de Godoy_Rodrigues_Abramof_Dias_Schikora_As_Lischka_2016,
title={Magnetic and structural properties of Fe-implanted cubic GaN}, volume={120},
DOI={10.1063/1.4962275}, number={10103901},
journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Righetti,
V. A. N. and Gratens, X. and Chitta, V. A. and de Godoy, M. P. F. and Rodrigues,
A. D. and Abramof, E. and Dias, J. F. and Schikora, D. and As, Donat Josef and
Lischka, K.}, year={2016} }'
chicago: Righetti, V. A. N., X. Gratens, V. A. Chitta, M. P. F. de Godoy, A. D.
Rodrigues, E. Abramof, J. F. Dias, D. Schikora, Donat Josef As, and K. Lischka.
“Magnetic and Structural Properties of Fe-Implanted Cubic GaN.” Journal of
Applied Physics 120, no. 10 (2016). https://doi.org/10.1063/1.4962275.
ieee: V. A. N. Righetti et al., “Magnetic and structural properties of Fe-implanted
cubic GaN,” Journal of Applied Physics, vol. 120, no. 10, 2016.
mla: Righetti, V. A. N., et al. “Magnetic and Structural Properties of Fe-Implanted
Cubic GaN.” Journal of Applied Physics, vol. 120, no. 10, 103901, AIP Publishing,
2016, doi:10.1063/1.4962275.
short: V.A.N. Righetti, X. Gratens, V.A. Chitta, M.P.F. de Godoy, A.D. Rodrigues,
E. Abramof, J.F. Dias, D. Schikora, D.J. As, K. Lischka, Journal of Applied Physics
120 (2016).
date_created: 2018-10-24T08:05:48Z
date_updated: 2022-01-06T07:01:25Z
doi: 10.1063/1.4962275
intvolume: ' 120'
issue: '10'
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Magnetic and structural properties of Fe-implanted cubic GaN
type: journal_article
user_id: '14'
volume: 120
year: '2016'
...
---
_id: '4239'
abstract:
- lang: eng
text: "Confocal Raman spectroscopy is applied to identify ferroelectric domain structure
sensitive\r\nphonon modes in potassium titanyl phosphate. Therefore, polarization-dependent
measurements in\r\nvarious scattering configurations have been performed to characterize
the fundamental Raman\r\nspectra of the material. The obtained spectra are discussed
qualitatively based on an internal mode\r\nassignment. In the main part of this
work, we have characterized z-cut periodically poled potassium\r\ntitanyl phosphate
in terms of polarity- and structure-sensitive phonon modes. Here, we find vibrations\r\nwhose
intensities are linked to the ferroelectric domain walls. We interpret this in
terms of\r\nchanges in the polarizability originating from strain induced by domain
boundaries and the inner\r\nfield distribution. Hence, a direct and 3D visualization
of ferroelectric domain structures becomes\r\npossible in potassium titanyl phosphate."
article_number: '044103'
article_type: original
author:
- first_name: Michael
full_name: Rüsing, Michael
id: '22501'
last_name: Rüsing
orcid: 0000-0003-4682-4577
- first_name: Christof
full_name: Eigner, Christof
id: '13244'
last_name: Eigner
orcid: https://orcid.org/0000-0002-5693-3083
- first_name: P.
full_name: Mackwitz, P.
last_name: Mackwitz
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: Christine
full_name: Silberhorn, Christine
id: '26263'
last_name: Silberhorn
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: 'Rüsing M, Eigner C, Mackwitz P, Berth G, Silberhorn C, Zrenner A. Identification
of ferroelectric domain structure sensitive phonon modes in potassium titanyl
phosphate: A fundamental study. Journal of Applied Physics. 2016;119(4).
doi:10.1063/1.4940964'
apa: 'Rüsing, M., Eigner, C., Mackwitz, P., Berth, G., Silberhorn, C., & Zrenner,
A. (2016). Identification of ferroelectric domain structure sensitive phonon modes
in potassium titanyl phosphate: A fundamental study. Journal of Applied Physics,
119(4), Article 044103. https://doi.org/10.1063/1.4940964'
bibtex: '@article{Rüsing_Eigner_Mackwitz_Berth_Silberhorn_Zrenner_2016, title={Identification
of ferroelectric domain structure sensitive phonon modes in potassium titanyl
phosphate: A fundamental study}, volume={119}, DOI={10.1063/1.4940964},
number={4044103}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Rüsing, Michael and Eigner, Christof and Mackwitz, P. and Berth, Gerhard
and Silberhorn, Christine and Zrenner, Artur}, year={2016} }'
chicago: 'Rüsing, Michael, Christof Eigner, P. Mackwitz, Gerhard Berth, Christine
Silberhorn, and Artur Zrenner. “Identification of Ferroelectric Domain Structure
Sensitive Phonon Modes in Potassium Titanyl Phosphate: A Fundamental Study.” Journal
of Applied Physics 119, no. 4 (2016). https://doi.org/10.1063/1.4940964.'
ieee: 'M. Rüsing, C. Eigner, P. Mackwitz, G. Berth, C. Silberhorn, and A. Zrenner,
“Identification of ferroelectric domain structure sensitive phonon modes in potassium
titanyl phosphate: A fundamental study,” Journal of Applied Physics, vol.
119, no. 4, Art. no. 044103, 2016, doi: 10.1063/1.4940964.'
mla: 'Rüsing, Michael, et al. “Identification of Ferroelectric Domain Structure
Sensitive Phonon Modes in Potassium Titanyl Phosphate: A Fundamental Study.” Journal
of Applied Physics, vol. 119, no. 4, 044103, AIP Publishing, 2016, doi:10.1063/1.4940964.'
short: M. Rüsing, C. Eigner, P. Mackwitz, G. Berth, C. Silberhorn, A. Zrenner, Journal
of Applied Physics 119 (2016).
date_created: 2018-08-29T08:21:00Z
date_updated: 2023-10-09T08:32:15Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '288'
doi: 10.1063/1.4940964
intvolume: ' 119'
issue: '4'
language:
- iso: eng
project:
- _id: '53'
grant_number: '231447078'
name: TRR 142
- _id: '55'
name: TRR 142 - Project Area B
- _id: '68'
grant_number: '231447078'
name: TRR 142 - Subproject B3
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: 'Identification of ferroelectric domain structure sensitive phonon modes in
potassium titanyl phosphate: A fundamental study'
type: journal_article
user_id: '14931'
volume: 119
year: '2016'
...
---
_id: '4820'
article_number: '225701'
author:
- first_name: J. H.
full_name: Buß, J. H.
last_name: Buß
- first_name: T.
full_name: Schupp, T.
last_name: Schupp
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: D.
full_name: Hägele, D.
last_name: Hägele
- first_name: J.
full_name: Rudolph, J.
last_name: Rudolph
citation:
ama: Buß JH, Schupp T, As DJ, Hägele D, Rudolph J. Temperature dependence of the
electron Landé g-factor in cubic GaN. Journal of Applied Physics. 2015;118(22).
doi:10.1063/1.4937128
apa: Buß, J. H., Schupp, T., As, D. J., Hägele, D., & Rudolph, J. (2015). Temperature
dependence of the electron Landé g-factor in cubic GaN. Journal of Applied
Physics, 118(22). https://doi.org/10.1063/1.4937128
bibtex: '@article{Buß_Schupp_As_Hägele_Rudolph_2015, title={Temperature dependence
of the electron Landé g-factor in cubic GaN}, volume={118}, DOI={10.1063/1.4937128},
number={22225701}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Buß, J. H. and Schupp, T. and As, Donat Josef and Hägele, D. and Rudolph,
J.}, year={2015} }'
chicago: Buß, J. H., T. Schupp, Donat Josef As, D. Hägele, and J. Rudolph. “Temperature
Dependence of the Electron Landé G-Factor in Cubic GaN.” Journal of Applied
Physics 118, no. 22 (2015). https://doi.org/10.1063/1.4937128.
ieee: J. H. Buß, T. Schupp, D. J. As, D. Hägele, and J. Rudolph, “Temperature dependence
of the electron Landé g-factor in cubic GaN,” Journal of Applied Physics,
vol. 118, no. 22, 2015.
mla: Buß, J. H., et al. “Temperature Dependence of the Electron Landé G-Factor in
Cubic GaN.” Journal of Applied Physics, vol. 118, no. 22, 225701, AIP Publishing,
2015, doi:10.1063/1.4937128.
short: J.H. Buß, T. Schupp, D.J. As, D. Hägele, J. Rudolph, Journal of Applied Physics
118 (2015).
date_created: 2018-10-24T08:18:32Z
date_updated: 2022-01-06T07:01:25Z
doi: 10.1063/1.4937128
intvolume: ' 118'
issue: '22'
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Temperature dependence of the electron Landé g-factor in cubic GaN
type: journal_article
user_id: '14'
volume: 118
year: '2015'
...
---
_id: '4825'
article_number: '093906'
author:
- first_name: A.
full_name: Schaefer, A.
last_name: Schaefer
- first_name: J. H.
full_name: Buß, J. H.
last_name: Buß
- first_name: T.
full_name: Schupp, T.
last_name: Schupp
- first_name: A.
full_name: Zado, A.
last_name: Zado
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: D.
full_name: Hägele, D.
last_name: Hägele
- first_name: J.
full_name: Rudolph, J.
last_name: Rudolph
citation:
ama: Schaefer A, Buß JH, Schupp T, et al. Strain dependent electron spin dynamics
in bulk cubic GaN. Journal of Applied Physics. 2015;117(9). doi:10.1063/1.4914069
apa: Schaefer, A., Buß, J. H., Schupp, T., Zado, A., As, D. J., Hägele, D., &
Rudolph, J. (2015). Strain dependent electron spin dynamics in bulk cubic GaN.
Journal of Applied Physics, 117(9). https://doi.org/10.1063/1.4914069
bibtex: '@article{Schaefer_Buß_Schupp_Zado_As_Hägele_Rudolph_2015, title={Strain
dependent electron spin dynamics in bulk cubic GaN}, volume={117}, DOI={10.1063/1.4914069},
number={9093906}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Schaefer, A. and Buß, J. H. and Schupp, T. and Zado, A. and As, Donat
Josef and Hägele, D. and Rudolph, J.}, year={2015} }'
chicago: Schaefer, A., J. H. Buß, T. Schupp, A. Zado, Donat Josef As, D. Hägele,
and J. Rudolph. “Strain Dependent Electron Spin Dynamics in Bulk Cubic GaN.” Journal
of Applied Physics 117, no. 9 (2015). https://doi.org/10.1063/1.4914069.
ieee: A. Schaefer et al., “Strain dependent electron spin dynamics in bulk
cubic GaN,” Journal of Applied Physics, vol. 117, no. 9, 2015.
mla: Schaefer, A., et al. “Strain Dependent Electron Spin Dynamics in Bulk Cubic
GaN.” Journal of Applied Physics, vol. 117, no. 9, 093906, AIP Publishing,
2015, doi:10.1063/1.4914069.
short: A. Schaefer, J.H. Buß, T. Schupp, A. Zado, D.J. As, D. Hägele, J. Rudolph,
Journal of Applied Physics 117 (2015).
date_created: 2018-10-24T09:02:29Z
date_updated: 2022-01-06T07:01:25Z
doi: 10.1063/1.4914069
intvolume: ' 117'
issue: '9'
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Strain dependent electron spin dynamics in bulk cubic GaN
type: journal_article
user_id: '14'
volume: 117
year: '2015'
...
---
_id: '1696'
article_number: '213105'
author:
- first_name: Christina A.
full_name: Bader, Christina A.
last_name: Bader
- first_name: Franziska
full_name: Zeuner, Franziska
last_name: Zeuner
- first_name: Manuel H. W.
full_name: Bader, Manuel H. W.
last_name: Bader
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Bader CA, Zeuner F, Bader MHW, Zentgraf T, Meier C. Nonlinear optical sub-bandgap
excitation of ZnO-based photonic resonators. Journal of Applied Physics.
2015;118(21). doi:10.1063/1.4936768
apa: Bader, C. A., Zeuner, F., Bader, M. H. W., Zentgraf, T., & Meier, C. (2015).
Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators. Journal
of Applied Physics, 118(21). https://doi.org/10.1063/1.4936768
bibtex: '@article{Bader_Zeuner_Bader_Zentgraf_Meier_2015, title={Nonlinear optical
sub-bandgap excitation of ZnO-based photonic resonators}, volume={118}, DOI={10.1063/1.4936768}, number={21213105},
journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Bader,
Christina A. and Zeuner, Franziska and Bader, Manuel H. W. and Zentgraf, Thomas
and Meier, Cedrik}, year={2015} }'
chicago: Bader, Christina A., Franziska Zeuner, Manuel H. W. Bader, Thomas Zentgraf,
and Cedrik Meier. “Nonlinear Optical Sub-Bandgap Excitation of ZnO-Based Photonic
Resonators.” Journal of Applied Physics 118, no. 21 (2015). https://doi.org/10.1063/1.4936768.
ieee: C. A. Bader, F. Zeuner, M. H. W. Bader, T. Zentgraf, and C. Meier, “Nonlinear
optical sub-bandgap excitation of ZnO-based photonic resonators,” Journal of
Applied Physics, vol. 118, no. 21, 2015.
mla: Bader, Christina A., et al. “Nonlinear Optical Sub-Bandgap Excitation of ZnO-Based
Photonic Resonators.” Journal of Applied Physics, vol. 118, no. 21, 213105,
AIP Publishing, 2015, doi:10.1063/1.4936768.
short: C.A. Bader, F. Zeuner, M.H.W. Bader, T. Zentgraf, C. Meier, Journal of Applied
Physics 118 (2015).
date_created: 2018-03-22T18:33:32Z
date_updated: 2022-01-06T06:53:00Z
department:
- _id: '15'
- _id: '230'
- _id: '287'
- _id: '289'
- _id: '35'
doi: 10.1063/1.4936768
intvolume: ' 118'
issue: '21'
language:
- iso: eng
project:
- _id: '53'
name: TRR 142
- _id: '54'
name: TRR 142 - Project Area A
- _id: '62'
name: TRR 142 - Subproject A5
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators
type: journal_article
user_id: '20798'
volume: 118
year: '2015'
...
---
_id: '7232'
article_number: '043909'
author:
- first_name: Fang-Yuh
full_name: Lo, Fang-Yuh
last_name: Lo
- first_name: Cheng-De
full_name: Huang, Cheng-De
last_name: Huang
- first_name: Kai-Chieh
full_name: Chou, Kai-Chieh
last_name: Chou
- first_name: Jhong-Yu
full_name: Guo, Jhong-Yu
last_name: Guo
- first_name: Hsiang-Lin
full_name: Liu, Hsiang-Lin
last_name: Liu
- first_name: Verena
full_name: Ney, Verena
last_name: Ney
- first_name: Andreas
full_name: Ney, Andreas
last_name: Ney
- first_name: Stepan
full_name: Shvarkov, Stepan
last_name: Shvarkov
- first_name: Sébastien
full_name: Pezzagna, Sébastien
last_name: Pezzagna
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Chi-Ta
full_name: Chia, Chi-Ta
last_name: Chia
- first_name: Ming-Yau
full_name: Chern, Ming-Yau
last_name: Chern
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Jean
full_name: Massies, Jean
last_name: Massies
citation:
ama: Lo F-Y, Huang C-D, Chou K-C, et al. Structural, optical, and magnetic properties
of highly-resistive Sm-implanted GaN thin films. Journal of Applied Physics.
2014;116(4). doi:10.1063/1.4891226
apa: Lo, F.-Y., Huang, C.-D., Chou, K.-C., Guo, J.-Y., Liu, H.-L., Ney, V., … Massies,
J. (2014). Structural, optical, and magnetic properties of highly-resistive Sm-implanted
GaN thin films. Journal of Applied Physics, 116(4). https://doi.org/10.1063/1.4891226
bibtex: '@article{Lo_Huang_Chou_Guo_Liu_Ney_Ney_Shvarkov_Pezzagna_Reuter_et al._2014,
title={Structural, optical, and magnetic properties of highly-resistive Sm-implanted
GaN thin films}, volume={116}, DOI={10.1063/1.4891226},
number={4043909}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Lo, Fang-Yuh and Huang, Cheng-De and Chou, Kai-Chieh and Guo, Jhong-Yu
and Liu, Hsiang-Lin and Ney, Verena and Ney, Andreas and Shvarkov, Stepan and
Pezzagna, Sébastien and Reuter, Dirk and et al.}, year={2014} }'
chicago: Lo, Fang-Yuh, Cheng-De Huang, Kai-Chieh Chou, Jhong-Yu Guo, Hsiang-Lin
Liu, Verena Ney, Andreas Ney, et al. “Structural, Optical, and Magnetic Properties
of Highly-Resistive Sm-Implanted GaN Thin Films.” Journal of Applied Physics
116, no. 4 (2014). https://doi.org/10.1063/1.4891226.
ieee: F.-Y. Lo et al., “Structural, optical, and magnetic properties of highly-resistive
Sm-implanted GaN thin films,” Journal of Applied Physics, vol. 116, no.
4, 2014.
mla: Lo, Fang-Yuh, et al. “Structural, Optical, and Magnetic Properties of Highly-Resistive
Sm-Implanted GaN Thin Films.” Journal of Applied Physics, vol. 116, no.
4, 043909, AIP Publishing, 2014, doi:10.1063/1.4891226.
short: F.-Y. Lo, C.-D. Huang, K.-C. Chou, J.-Y. Guo, H.-L. Liu, V. Ney, A. Ney,
S. Shvarkov, S. Pezzagna, D. Reuter, C.-T. Chia, M.-Y. Chern, A.D. Wieck, J. Massies,
Journal of Applied Physics 116 (2014).
date_created: 2019-01-29T12:36:40Z
date_updated: 2022-01-06T07:03:30Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.4891226
intvolume: ' 116'
issue: '4'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Structural, optical, and magnetic properties of highly-resistive Sm-implanted
GaN thin films
type: journal_article
user_id: '42514'
volume: 116
year: '2014'
...
---
_id: '23643'
author:
- first_name: J.
full_name: Will, J.
last_name: Will
- first_name: A.
full_name: Gröschel, A.
last_name: Gröschel
- first_name: D.
full_name: Kot, D.
last_name: Kot
- first_name: M. A.
full_name: Schubert, M. A.
last_name: Schubert
- first_name: C.
full_name: Bergmann, C.
last_name: Bergmann
- first_name: Hans-Georg
full_name: Steinrück, Hans-Georg
id: '84268'
last_name: Steinrück
orcid: 0000-0001-6373-0877
- first_name: G.
full_name: Kissinger, G.
last_name: Kissinger
- first_name: A.
full_name: Magerl, A.
last_name: Magerl
citation:
ama: Will J, Gröschel A, Kot D, et al. Oxygen diffusivity in silicon derived from
dynamical X-ray diffraction. Journal of Applied Physics. 2013;7:073508.
doi:10.1063/1.4792747
apa: Will, J., Gröschel, A., Kot, D., Schubert, M. A., Bergmann, C., Steinrück,
H.-G., Kissinger, G., & Magerl, A. (2013). Oxygen diffusivity in silicon derived
from dynamical X-ray diffraction. Journal of Applied Physics, 7,
073508. https://doi.org/10.1063/1.4792747
bibtex: '@article{Will_Gröschel_Kot_Schubert_Bergmann_Steinrück_Kissinger_Magerl_2013,
title={Oxygen diffusivity in silicon derived from dynamical X-ray diffraction},
volume={7}, DOI={10.1063/1.4792747},
journal={Journal of Applied Physics}, author={Will, J. and Gröschel, A. and Kot,
D. and Schubert, M. A. and Bergmann, C. and Steinrück, Hans-Georg and Kissinger,
G. and Magerl, A.}, year={2013}, pages={073508} }'
chicago: 'Will, J., A. Gröschel, D. Kot, M. A. Schubert, C. Bergmann, Hans-Georg
Steinrück, G. Kissinger, and A. Magerl. “Oxygen Diffusivity in Silicon Derived
from Dynamical X-Ray Diffraction.” Journal of Applied Physics 7 (2013):
073508. https://doi.org/10.1063/1.4792747.'
ieee: 'J. Will et al., “Oxygen diffusivity in silicon derived from dynamical
X-ray diffraction,” Journal of Applied Physics, vol. 7, p. 073508, 2013,
doi: 10.1063/1.4792747.'
mla: Will, J., et al. “Oxygen Diffusivity in Silicon Derived from Dynamical X-Ray
Diffraction.” Journal of Applied Physics, vol. 7, 2013, p. 073508, doi:10.1063/1.4792747.
short: J. Will, A. Gröschel, D. Kot, M.A. Schubert, C. Bergmann, H.-G. Steinrück,
G. Kissinger, A. Magerl, Journal of Applied Physics 7 (2013) 073508.
date_created: 2021-09-01T09:49:28Z
date_updated: 2022-01-06T06:55:57Z
department:
- _id: '633'
doi: 10.1063/1.4792747
intvolume: ' 7'
language:
- iso: eng
page: '073508'
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: Oxygen diffusivity in silicon derived from dynamical X-ray diffraction
type: journal_article
user_id: '84268'
volume: 7
year: '2013'
...
---
_id: '39715'
article_number: '173104'
author:
- first_name: Gaby
full_name: Nordendorf, Gaby
last_name: Nordendorf
- first_name: Alexander
full_name: Lorenz, Alexander
last_name: Lorenz
- first_name: Andreas
full_name: Hoischen, Andreas
last_name: Hoischen
- first_name: Jürgen
full_name: Schmidtke, Jürgen
last_name: Schmidtke
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
- first_name: David
full_name: Wilkes, David
last_name: Wilkes
- first_name: Michael
full_name: Wittek, Michael
last_name: Wittek
citation:
ama: Nordendorf G, Lorenz A, Hoischen A, et al. Hysteresis and memory factor of
the Kerr effect in blue phases. Journal of Applied Physics. 2013;114(17).
doi:10.1063/1.4828477
apa: Nordendorf, G., Lorenz, A., Hoischen, A., Schmidtke, J., Kitzerow, H.-S., Wilkes,
D., & Wittek, M. (2013). Hysteresis and memory factor of the Kerr effect in
blue phases. Journal of Applied Physics, 114(17), Article 173104.
https://doi.org/10.1063/1.4828477
bibtex: '@article{Nordendorf_Lorenz_Hoischen_Schmidtke_Kitzerow_Wilkes_Wittek_2013,
title={Hysteresis and memory factor of the Kerr effect in blue phases}, volume={114},
DOI={10.1063/1.4828477}, number={17173104},
journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Nordendorf,
Gaby and Lorenz, Alexander and Hoischen, Andreas and Schmidtke, Jürgen and Kitzerow,
Heinz-Siegfried and Wilkes, David and Wittek, Michael}, year={2013} }'
chicago: Nordendorf, Gaby, Alexander Lorenz, Andreas Hoischen, Jürgen Schmidtke,
Heinz-Siegfried Kitzerow, David Wilkes, and Michael Wittek. “Hysteresis and Memory
Factor of the Kerr Effect in Blue Phases.” Journal of Applied Physics 114,
no. 17 (2013). https://doi.org/10.1063/1.4828477.
ieee: 'G. Nordendorf et al., “Hysteresis and memory factor of the Kerr effect
in blue phases,” Journal of Applied Physics, vol. 114, no. 17, Art. no.
173104, 2013, doi: 10.1063/1.4828477.'
mla: Nordendorf, Gaby, et al. “Hysteresis and Memory Factor of the Kerr Effect in
Blue Phases.” Journal of Applied Physics, vol. 114, no. 17, 173104, AIP
Publishing, 2013, doi:10.1063/1.4828477.
short: G. Nordendorf, A. Lorenz, A. Hoischen, J. Schmidtke, H.-S. Kitzerow, D. Wilkes,
M. Wittek, Journal of Applied Physics 114 (2013).
date_created: 2023-01-24T18:31:09Z
date_updated: 2023-01-24T18:31:34Z
department:
- _id: '313'
- _id: '230'
- _id: '638'
doi: 10.1063/1.4828477
intvolume: ' 114'
issue: '17'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Hysteresis and memory factor of the Kerr effect in blue phases
type: journal_article
user_id: '254'
volume: 114
year: '2013'
...
---
_id: '22603'
article_number: '103306'
author:
- first_name: Marina
full_name: Prenzel, Marina
last_name: Prenzel
- first_name: Maria Teresa
full_name: de los Arcos de Pedro, Maria Teresa
id: '54556'
last_name: de los Arcos de Pedro
- first_name: Annika
full_name: Kortmann, Annika
last_name: Kortmann
- first_name: Jörg
full_name: Winter, Jörg
last_name: Winter
- first_name: Achim
full_name: von Keudell, Achim
last_name: von Keudell
citation:
ama: Prenzel M, de los Arcos de Pedro MT, Kortmann A, Winter J, von Keudell A. Embedded
argon as a tool for sampling local structure in thin plasma deposited aluminum
oxide films. Journal of Applied Physics. Published online 2012. doi:10.1063/1.4767383
apa: Prenzel, M., de los Arcos de Pedro, M. T., Kortmann, A., Winter, J., &
von Keudell, A. (2012). Embedded argon as a tool for sampling local structure
in thin plasma deposited aluminum oxide films. Journal of Applied Physics,
Article 103306. https://doi.org/10.1063/1.4767383
bibtex: '@article{Prenzel_de los Arcos de Pedro_Kortmann_Winter_von Keudell_2012,
title={Embedded argon as a tool for sampling local structure in thin plasma deposited
aluminum oxide films}, DOI={10.1063/1.4767383},
number={103306}, journal={Journal of Applied Physics}, author={Prenzel, Marina
and de los Arcos de Pedro, Maria Teresa and Kortmann, Annika and Winter, Jörg
and von Keudell, Achim}, year={2012} }'
chicago: Prenzel, Marina, Maria Teresa de los Arcos de Pedro, Annika Kortmann, Jörg
Winter, and Achim von Keudell. “Embedded Argon as a Tool for Sampling Local Structure
in Thin Plasma Deposited Aluminum Oxide Films.” Journal of Applied Physics,
2012. https://doi.org/10.1063/1.4767383.
ieee: 'M. Prenzel, M. T. de los Arcos de Pedro, A. Kortmann, J. Winter, and A. von
Keudell, “Embedded argon as a tool for sampling local structure in thin plasma
deposited aluminum oxide films,” Journal of Applied Physics, Art. no. 103306,
2012, doi: 10.1063/1.4767383.'
mla: Prenzel, Marina, et al. “Embedded Argon as a Tool for Sampling Local Structure
in Thin Plasma Deposited Aluminum Oxide Films.” Journal of Applied Physics,
103306, 2012, doi:10.1063/1.4767383.
short: M. Prenzel, M.T. de los Arcos de Pedro, A. Kortmann, J. Winter, A. von Keudell,
Journal of Applied Physics (2012).
date_created: 2021-07-07T11:30:38Z
date_updated: 2023-01-24T08:25:58Z
department:
- _id: '302'
doi: 10.1063/1.4767383
extern: '1'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: Embedded argon as a tool for sampling local structure in thin plasma deposited
aluminum oxide films
type: journal_article
user_id: '54556'
year: '2012'
...
---
_id: '7719'
article_number: '016106'
author:
- first_name: Y. S.
full_name: Chen, Y. S.
last_name: Chen
- first_name: J.
full_name: Huang, J.
last_name: Huang
- first_name: A.
full_name: Ludwig, A.
last_name: Ludwig
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: G.
full_name: Bacher, G.
last_name: Bacher
citation:
ama: Chen YS, Huang J, Ludwig A, Reuter D, Wieck AD, Bacher G. Manipulation of nuclear
spin dynamics in n-GaAs using an on-chip microcoil. Journal of Applied Physics.
2011;109(1). doi:10.1063/1.3530731
apa: Chen, Y. S., Huang, J., Ludwig, A., Reuter, D., Wieck, A. D., & Bacher,
G. (2011). Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil.
Journal of Applied Physics, 109(1). https://doi.org/10.1063/1.3530731
bibtex: '@article{Chen_Huang_Ludwig_Reuter_Wieck_Bacher_2011, title={Manipulation
of nuclear spin dynamics in n-GaAs using an on-chip microcoil}, volume={109},
DOI={10.1063/1.3530731}, number={1016106},
journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Chen,
Y. S. and Huang, J. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Bacher,
G.}, year={2011} }'
chicago: Chen, Y. S., J. Huang, A. Ludwig, Dirk Reuter, A. D. Wieck, and G. Bacher.
“Manipulation of Nuclear Spin Dynamics in N-GaAs Using an on-Chip Microcoil.”
Journal of Applied Physics 109, no. 1 (2011). https://doi.org/10.1063/1.3530731.
ieee: Y. S. Chen, J. Huang, A. Ludwig, D. Reuter, A. D. Wieck, and G. Bacher, “Manipulation
of nuclear spin dynamics in n-GaAs using an on-chip microcoil,” Journal of
Applied Physics, vol. 109, no. 1, 2011.
mla: Chen, Y. S., et al. “Manipulation of Nuclear Spin Dynamics in N-GaAs Using
an on-Chip Microcoil.” Journal of Applied Physics, vol. 109, no. 1, 016106,
AIP Publishing, 2011, doi:10.1063/1.3530731.
short: Y.S. Chen, J. Huang, A. Ludwig, D. Reuter, A.D. Wieck, G. Bacher, Journal
of Applied Physics 109 (2011).
date_created: 2019-02-14T10:41:44Z
date_updated: 2022-01-06T07:03:45Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3530731
intvolume: ' 109'
issue: '1'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil
type: journal_article
user_id: '42514'
volume: 109
year: '2011'
...
---
_id: '4146'
abstract:
- lang: eng
text: The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001)
substrates by plasma-assisted molecular beam epitaxy is reported. The influence
of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase
domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting
in equal plane orientation and the same anti-phase boundaries. The presence of
the APDs is independent of the GaN layer thickness. Atomic force microscopy surface
analysis indicates lateral growth anisotropy of GaN facets in dependence of the
APD orientation. This anisotropy can be linked to Ga and N face types of the {111}
planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to
3C-SiC, however, a difference in GaN phase composition for the two types of APDs
can be measured by electron backscatter diffraction, μ-Raman and cathodoluminescence
spectroscopy.
article_number: '123512'
article_type: original
author:
- first_name: Ricarda
full_name: Maria Kemper, Ricarda
last_name: Maria Kemper
- first_name: Thorsten
full_name: Schupp, Thorsten
last_name: Schupp
- first_name: Maik
full_name: Häberlen, Maik
last_name: Häberlen
- first_name: Thomas
full_name: Niendorf, Thomas
last_name: Niendorf
- first_name: Hans-Jürgen
full_name: Maier, Hans-Jürgen
last_name: Maier
- first_name: Anja
full_name: Dempewolf, Anja
last_name: Dempewolf
- first_name: Frank
full_name: Bertram, Frank
last_name: Bertram
- first_name: Jürgen
full_name: Christen, Jürgen
last_name: Christen
- first_name: Ronny
full_name: Kirste, Ronny
last_name: Kirste
- first_name: Axel
full_name: Hoffmann, Axel
last_name: Hoffmann
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Donat
full_name: As, Donat
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Maria Kemper R, Schupp T, Häberlen M, et al. Anti-phase domains in cubic GaN.
Journal of Applied Physics. 2011;110(12). doi:10.1063/1.3666050
apa: Maria Kemper, R., Schupp, T., Häberlen, M., Niendorf, T., Maier, H.-J., Dempewolf,
A., Bertram, F., Christen, J., Kirste, R., Hoffmann, A., Lindner, J., & As,
D. (2011). Anti-phase domains in cubic GaN. Journal of Applied Physics,
110(12), Article 123512. https://doi.org/10.1063/1.3666050
bibtex: '@article{Maria Kemper_Schupp_Häberlen_Niendorf_Maier_Dempewolf_Bertram_Christen_Kirste_Hoffmann_et
al._2011, title={Anti-phase domains in cubic GaN}, volume={110}, DOI={10.1063/1.3666050},
number={12123512}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Maria Kemper, Ricarda and Schupp, Thorsten and Häberlen, Maik and Niendorf,
Thomas and Maier, Hans-Jürgen and Dempewolf, Anja and Bertram, Frank and Christen,
Jürgen and Kirste, Ronny and Hoffmann, Axel and et al.}, year={2011} }'
chicago: Maria Kemper, Ricarda, Thorsten Schupp, Maik Häberlen, Thomas Niendorf,
Hans-Jürgen Maier, Anja Dempewolf, Frank Bertram, et al. “Anti-Phase Domains in
Cubic GaN.” Journal of Applied Physics 110, no. 12 (2011). https://doi.org/10.1063/1.3666050.
ieee: 'R. Maria Kemper et al., “Anti-phase domains in cubic GaN,” Journal
of Applied Physics, vol. 110, no. 12, Art. no. 123512, 2011, doi: 10.1063/1.3666050.'
mla: Maria Kemper, Ricarda, et al. “Anti-Phase Domains in Cubic GaN.” Journal
of Applied Physics, vol. 110, no. 12, 123512, AIP Publishing, 2011, doi:10.1063/1.3666050.
short: R. Maria Kemper, T. Schupp, M. Häberlen, T. Niendorf, H.-J. Maier, A. Dempewolf,
F. Bertram, J. Christen, R. Kirste, A. Hoffmann, J. Lindner, D. As, Journal of
Applied Physics 110 (2011).
date_created: 2018-08-27T12:40:30Z
date_updated: 2023-10-09T09:10:50Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1063/1.3666050
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T12:42:38Z
date_updated: 2018-08-27T12:42:38Z
file_id: '4147'
file_name: Anti-phase domains in cubic GaN.pdf
file_size: 3305430
relation: main_file
success: 1
file_date_updated: 2018-08-27T12:42:38Z
has_accepted_license: '1'
intvolume: ' 110'
issue: '12'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Anti-phase domains in cubic GaN
type: journal_article
user_id: '14931'
volume: 110
year: '2011'
...
---
_id: '7985'
article_number: '063902'
author:
- first_name: E.
full_name: Schuster, E.
last_name: Schuster
- first_name: R. A.
full_name: Brand, R. A.
last_name: Brand
- first_name: F.
full_name: Stromberg, F.
last_name: Stromberg
- first_name: A.
full_name: Ludwig, A.
last_name: Ludwig
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: S.
full_name: Hövel, S.
last_name: Hövel
- first_name: N. C.
full_name: Gerhardt, N. C.
last_name: Gerhardt
- first_name: M. R.
full_name: Hofmann, M. R.
last_name: Hofmann
- first_name: H.
full_name: Wende, H.
last_name: Wende
- first_name: W.
full_name: Keune, W.
last_name: Keune
citation:
ama: 'Schuster E, Brand RA, Stromberg F, et al. Epitaxial growth and interfacial
magnetism of spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light
emitting diode as a prototype system. Journal of Applied Physics. 2010;108(6).
doi:10.1063/1.3476265'
apa: 'Schuster, E., Brand, R. A., Stromberg, F., Ludwig, A., Reuter, D., Wieck,
A. D., … Keune, W. (2010). Epitaxial growth and interfacial magnetism of spin
aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode
as a prototype system. Journal of Applied Physics, 108(6). https://doi.org/10.1063/1.3476265'
bibtex: '@article{Schuster_Brand_Stromberg_Ludwig_Reuter_Wieck_Hövel_Gerhardt_Hofmann_Wende_et
al._2010, title={Epitaxial growth and interfacial magnetism of spin aligner for
remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype
system}, volume={108}, DOI={10.1063/1.3476265},
number={6063902}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Schuster, E. and Brand, R. A. and Stromberg, F. and Ludwig, A. and Reuter,
Dirk and Wieck, A. D. and Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and
Wende, H. and et al.}, year={2010} }'
chicago: 'Schuster, E., R. A. Brand, F. Stromberg, A. Ludwig, Dirk Reuter, A. D.
Wieck, S. Hövel, et al. “Epitaxial Growth and Interfacial Magnetism of Spin Aligner
for Remanent Spin Injection: [Fe/Tb]n/Fe/MgO/GaAs-Light Emitting Diode as a Prototype
System.” Journal of Applied Physics 108, no. 6 (2010). https://doi.org/10.1063/1.3476265.'
ieee: 'E. Schuster et al., “Epitaxial growth and interfacial magnetism of
spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting
diode as a prototype system,” Journal of Applied Physics, vol. 108, no.
6, 2010.'
mla: 'Schuster, E., et al. “Epitaxial Growth and Interfacial Magnetism of Spin Aligner
for Remanent Spin Injection: [Fe/Tb]n/Fe/MgO/GaAs-Light Emitting Diode as a Prototype
System.” Journal of Applied Physics, vol. 108, no. 6, 063902, AIP Publishing,
2010, doi:10.1063/1.3476265.'
short: E. Schuster, R.A. Brand, F. Stromberg, A. Ludwig, D. Reuter, A.D. Wieck,
S. Hövel, N.C. Gerhardt, M.R. Hofmann, H. Wende, W. Keune, Journal of Applied
Physics 108 (2010).
date_created: 2019-02-21T14:37:35Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3476265
intvolume: ' 108'
issue: '6'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: 'Epitaxial growth and interfacial magnetism of spin aligner for remanent spin
injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype system'
type: journal_article
user_id: '42514'
volume: 108
year: '2010'
...
---
_id: '4202'
abstract:
- lang: eng
text: "Unintentional doping in nonpolar a-plane \x01112¯0\x02 gallium nitride \x01GaN\x02
grown on r-plane \x0111¯02\x02\r\nsapphire using a three-dimensional \x013D\x02–two-dimensional
\x012D\x02 growth method has been\r\ncharacterized. For both 2D only and 3D–2D
growth, the presence of an unintentionally doped region\r\nadjacent to the GaN/sapphire
interface is observed by scanning capacitance microscopy \x01SCM\x02. The\r\naverage
width of this unintentionally doped layer is found to increase with increasing
3D growth\r\ntime. By using an intentionally doped GaN:Si staircase structure
for calibration, it is shown that the\r\nunintentionally doped region has an average
carrier concentration of \x012.5\x010.3\x02\x021018 cm−3. SCM\r\nalso reveals
the presence of unintentionally doped features extending at 60° from the GaN/sapphire\r\ninterface.
The observation of decreasing carrier concentration with distance from the GaN/sapphire\r\ninterface
along these features may suggest that the unintentional doping arises from oxygen\r\ndiffusion
from the sapphire substrate. Low temperature cathodoluminescence spectra reveal\r\nemission
peaks at 3.41 and 3.30 eV, which are believed to originate from basal plane stacking
faults\r\n\x01BSFs\x02 and prismatic stacking faults \x01PSFs\x02, respectively.
It is shown that the inclined features\r\nextending from the GaN/sapphire interface
exhibit both enhanced BSF and PSF emission. We\r\nsuggest that enhanced unintentional
doping occurs in regions around PSFs. Where BSFs intersect\r\nthis doped material
their emission is also enhanced due to reduced nonradiative recombination.\r\nTransmission
electron microscopy confirms the presence of PSFs extending through the film at
60°\r\nfrom the GaN/sapphire interface."
article_number: '023503'
article_type: original
author:
- first_name: Tongtong
full_name: Zhu, Tongtong
last_name: Zhu
- first_name: Carol F.
full_name: Johnston, Carol F.
last_name: Johnston
- first_name: Maik
full_name: Häberlen, Maik
last_name: Häberlen
- first_name: Menno J.
full_name: Kappers, Menno J.
last_name: Kappers
- first_name: Rachel A.
full_name: Oliver, Rachel A.
last_name: Oliver
citation:
ama: Zhu T, Johnston CF, Häberlen M, Kappers MJ, Oliver RA. Characterization of
unintentional doping in nonpolar GaN. Journal of Applied Physics. 2010;107(2).
doi:10.1063/1.3284944
apa: Zhu, T., Johnston, C. F., Häberlen, M., Kappers, M. J., & Oliver, R. A.
(2010). Characterization of unintentional doping in nonpolar GaN. Journal of
Applied Physics, 107(2). https://doi.org/10.1063/1.3284944
bibtex: '@article{Zhu_Johnston_Häberlen_Kappers_Oliver_2010, title={Characterization
of unintentional doping in nonpolar GaN}, volume={107}, DOI={10.1063/1.3284944},
number={2023503}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Zhu, Tongtong and Johnston, Carol F. and Häberlen, Maik and Kappers, Menno
J. and Oliver, Rachel A.}, year={2010} }'
chicago: Zhu, Tongtong, Carol F. Johnston, Maik Häberlen, Menno J. Kappers, and
Rachel A. Oliver. “Characterization of Unintentional Doping in Nonpolar GaN.”
Journal of Applied Physics 107, no. 2 (2010). https://doi.org/10.1063/1.3284944.
ieee: T. Zhu, C. F. Johnston, M. Häberlen, M. J. Kappers, and R. A. Oliver, “Characterization
of unintentional doping in nonpolar GaN,” Journal of Applied Physics, vol.
107, no. 2, 2010.
mla: Zhu, Tongtong, et al. “Characterization of Unintentional Doping in Nonpolar
GaN.” Journal of Applied Physics, vol. 107, no. 2, 023503, AIP Publishing,
2010, doi:10.1063/1.3284944.
short: T. Zhu, C.F. Johnston, M. Häberlen, M.J. Kappers, R.A. Oliver, Journal of
Applied Physics 107 (2010).
date_created: 2018-08-28T12:27:34Z
date_updated: 2022-01-06T07:00:34Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1063/1.3284944
extern: '1'
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:28:22Z
date_updated: 2018-08-28T12:28:22Z
file_id: '4203'
file_name: Characterization of unintentional doping in nonpolar GaN.pdf
file_size: 688753
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:28:22Z
has_accepted_license: '1'
intvolume: ' 107'
issue: '2'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Characterization of unintentional doping in nonpolar GaN
type: journal_article
user_id: '55706'
volume: 107
year: '2010'
...
---
_id: '4212'
abstract:
- lang: eng
text: "Low temperature cathodo- and photoluminescence has been performed on nonpolar
a-plane GaN films grown using epitaxial lateral overgrowth. In films overgrown
at a low V–III ratio, the emission spectrum is dominated by “yellow” and “blue”
luminescence bands, attributed to recombination at point defects or impurities.
The intensity of this emission is observed to decrease steadily across the window
region along the −c direction, possibly due to asymmetric diffusion of a point
defect/impurity species. When overgrown at a higher V–III ratio, the near band
edge and basal-plane stacking fault emission intensity increases by orders of
magnitude and a donor–acceptor pair band is observed. Using monochromatic cathodoluminescence
imaging, the various emission features are correlated with the microstructure
of the film. In particular, the peak energy of the basal-plane stacking fault
emission is seen to be blueshifted by \x0415 meV in the wing relative to the window
region, which may be related to the different strain states in the respective
regions."
article_number: '033523'
article_type: original
author:
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: T. J.
full_name: Badcock, T. J.
last_name: Badcock
- first_name: M. A.
full_name: Moram, M. A.
last_name: Moram
- first_name: J. L.
full_name: Hollander, J. L.
last_name: Hollander
- first_name: M. J.
full_name: Kappers, M. J.
last_name: Kappers
- first_name: P.
full_name: Dawson, P.
last_name: Dawson
- first_name: C. J.
full_name: Humphreys, C. J.
last_name: Humphreys
- first_name: R. A.
full_name: Oliver, R. A.
last_name: Oliver
citation:
ama: Häberlen M, Badcock TJ, Moram MA, et al. Low temperature photoluminescence
and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral
overgrowth. Journal of Applied Physics. 2010;108(3). doi:10.1063/1.3460641
apa: Häberlen, M., Badcock, T. J., Moram, M. A., Hollander, J. L., Kappers, M. J.,
Dawson, P., … Oliver, R. A. (2010). Low temperature photoluminescence and cathodoluminescence
studies of nonpolar GaN grown using epitaxial lateral overgrowth. Journal of
Applied Physics, 108(3). https://doi.org/10.1063/1.3460641
bibtex: '@article{Häberlen_Badcock_Moram_Hollander_Kappers_Dawson_Humphreys_Oliver_2010,
title={Low temperature photoluminescence and cathodoluminescence studies of nonpolar
GaN grown using epitaxial lateral overgrowth}, volume={108}, DOI={10.1063/1.3460641},
number={3033523}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Häberlen, M. and Badcock, T. J. and Moram, M. A. and Hollander, J. L.
and Kappers, M. J. and Dawson, P. and Humphreys, C. J. and Oliver, R. A.}, year={2010}
}'
chicago: Häberlen, M., T. J. Badcock, M. A. Moram, J. L. Hollander, M. J. Kappers,
P. Dawson, C. J. Humphreys, and R. A. Oliver. “Low Temperature Photoluminescence
and Cathodoluminescence Studies of Nonpolar GaN Grown Using Epitaxial Lateral
Overgrowth.” Journal of Applied Physics 108, no. 3 (2010). https://doi.org/10.1063/1.3460641.
ieee: M. Häberlen et al., “Low temperature photoluminescence and cathodoluminescence
studies of nonpolar GaN grown using epitaxial lateral overgrowth,” Journal
of Applied Physics, vol. 108, no. 3, 2010.
mla: Häberlen, M., et al. “Low Temperature Photoluminescence and Cathodoluminescence
Studies of Nonpolar GaN Grown Using Epitaxial Lateral Overgrowth.” Journal
of Applied Physics, vol. 108, no. 3, 033523, AIP Publishing, 2010, doi:10.1063/1.3460641.
short: M. Häberlen, T.J. Badcock, M.A. Moram, J.L. Hollander, M.J. Kappers, P. Dawson,
C.J. Humphreys, R.A. Oliver, Journal of Applied Physics 108 (2010).
date_created: 2018-08-28T12:46:49Z
date_updated: 2022-01-06T07:00:37Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1063/1.3460641
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:47:23Z
date_updated: 2018-08-28T12:47:23Z
file_id: '4213'
file_name: Low temperature photoluminescence and cathodoluminescence studies of
non-polar GaN grown using epitaxial lateral overgrowth.pdf
file_size: 2391054
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language:
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publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Low temperature photoluminescence and cathodoluminescence studies of nonpolar
GaN grown using epitaxial lateral overgrowth
type: journal_article
user_id: '55706'
volume: 108
year: '2010'
...
---
_id: '39747'
article_number: '013540'
author:
- first_name: A.
full_name: Hoischen, A.
last_name: Hoischen
- first_name: S. A.
full_name: Benning, S. A.
last_name: Benning
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: 'Hoischen A, Benning SA, Kitzerow H-S. Electroconvection of liquid crystals:
Tool for fabricating modulated polymer surfaces. Journal of Applied Physics.
2009;105(1). doi:10.1063/1.3055398'
apa: 'Hoischen, A., Benning, S. A., & Kitzerow, H.-S. (2009). Electroconvection
of liquid crystals: Tool for fabricating modulated polymer surfaces. Journal
of Applied Physics, 105(1), Article 013540. https://doi.org/10.1063/1.3055398'
bibtex: '@article{Hoischen_Benning_Kitzerow_2009, title={Electroconvection of liquid
crystals: Tool for fabricating modulated polymer surfaces}, volume={105}, DOI={10.1063/1.3055398}, number={1013540},
journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Hoischen,
A. and Benning, S. A. and Kitzerow, Heinz-Siegfried}, year={2009} }'
chicago: 'Hoischen, A., S. A. Benning, and Heinz-Siegfried Kitzerow. “Electroconvection
of Liquid Crystals: Tool for Fabricating Modulated Polymer Surfaces.” Journal
of Applied Physics 105, no. 1 (2009). https://doi.org/10.1063/1.3055398.'
ieee: 'A. Hoischen, S. A. Benning, and H.-S. Kitzerow, “Electroconvection of liquid
crystals: Tool for fabricating modulated polymer surfaces,” Journal of Applied
Physics, vol. 105, no. 1, Art. no. 013540, 2009, doi: 10.1063/1.3055398.'
mla: 'Hoischen, A., et al. “Electroconvection of Liquid Crystals: Tool for Fabricating
Modulated Polymer Surfaces.” Journal of Applied Physics, vol. 105, no.
1, 013540, AIP Publishing, 2009, doi:10.1063/1.3055398.'
short: A. Hoischen, S.A. Benning, H.-S. Kitzerow, Journal of Applied Physics 105
(2009).
date_created: 2023-01-24T18:51:19Z
date_updated: 2023-01-24T18:51:47Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.3055398
intvolume: ' 105'
issue: '1'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: 'Electroconvection of liquid crystals: Tool for fabricating modulated polymer
surfaces'
type: journal_article
user_id: '254'
volume: 105
year: '2009'
...
---
_id: '7643'
article_number: '103112'
author:
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Andreas
full_name: Gondorf, Andreas
last_name: Gondorf
- first_name: Stephan
full_name: Lüttjohann, Stephan
last_name: Lüttjohann
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Hartmut
full_name: Wiggers, Hartmut
last_name: Wiggers
citation:
ama: 'Meier C, Gondorf A, Lüttjohann S, Lorke A, Wiggers H. Silicon nanoparticles:
Absorption, emission, and the nature of the electronic bandgap. Journal of
Applied Physics. 2007;101(10). doi:10.1063/1.2720095'
apa: 'Meier, C., Gondorf, A., Lüttjohann, S., Lorke, A., & Wiggers, H. (2007).
Silicon nanoparticles: Absorption, emission, and the nature of the electronic
bandgap. Journal of Applied Physics, 101(10). https://doi.org/10.1063/1.2720095'
bibtex: '@article{Meier_Gondorf_Lüttjohann_Lorke_Wiggers_2007, title={Silicon nanoparticles:
Absorption, emission, and the nature of the electronic bandgap}, volume={101},
DOI={10.1063/1.2720095}, number={10103112},
journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Meier,
Cedrik and Gondorf, Andreas and Lüttjohann, Stephan and Lorke, Axel and Wiggers,
Hartmut}, year={2007} }'
chicago: 'Meier, Cedrik, Andreas Gondorf, Stephan Lüttjohann, Axel Lorke, and Hartmut
Wiggers. “Silicon Nanoparticles: Absorption, Emission, and the Nature of the Electronic
Bandgap.” Journal of Applied Physics 101, no. 10 (2007). https://doi.org/10.1063/1.2720095.'
ieee: 'C. Meier, A. Gondorf, S. Lüttjohann, A. Lorke, and H. Wiggers, “Silicon nanoparticles:
Absorption, emission, and the nature of the electronic bandgap,” Journal of
Applied Physics, vol. 101, no. 10, 2007.'
mla: 'Meier, Cedrik, et al. “Silicon Nanoparticles: Absorption, Emission, and the
Nature of the Electronic Bandgap.” Journal of Applied Physics, vol. 101,
no. 10, 103112, AIP Publishing, 2007, doi:10.1063/1.2720095.'
short: C. Meier, A. Gondorf, S. Lüttjohann, A. Lorke, H. Wiggers, Journal of Applied
Physics 101 (2007).
date_created: 2019-02-13T11:33:50Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2720095
extern: '1'
intvolume: ' 101'
issue: '10'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: 'Silicon nanoparticles: Absorption, emission, and the nature of the electronic
bandgap'
type: journal_article
user_id: '20798'
volume: 101
year: '2007'
...
---
_id: '7648'
article_number: '113108'
author:
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Stephan
full_name: Lüttjohann, Stephan
last_name: Lüttjohann
- first_name: Vasyl G.
full_name: Kravets, Vasyl G.
last_name: Kravets
- first_name: Hermann
full_name: Nienhaus, Hermann
last_name: Nienhaus
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Pascal
full_name: Ifeacho, Pascal
last_name: Ifeacho
- first_name: Hartmut
full_name: Wiggers, Hartmut
last_name: Wiggers
- first_name: Christof
full_name: Schulz, Christof
last_name: Schulz
- first_name: Marcus K.
full_name: Kennedy, Marcus K.
last_name: Kennedy
- first_name: F. Einar
full_name: Kruis, F. Einar
last_name: Kruis
citation:
ama: Meier C, Lüttjohann S, Kravets VG, et al. Vibrational and defect states in
SnOx nanoparticles. Journal of Applied Physics. 2006;99(11). doi:10.1063/1.2203408
apa: Meier, C., Lüttjohann, S., Kravets, V. G., Nienhaus, H., Lorke, A., Ifeacho,
P., … Kruis, F. E. (2006). Vibrational and defect states in SnOx nanoparticles.
Journal of Applied Physics, 99(11). https://doi.org/10.1063/1.2203408
bibtex: '@article{Meier_Lüttjohann_Kravets_Nienhaus_Lorke_Ifeacho_Wiggers_Schulz_Kennedy_Kruis_2006,
title={Vibrational and defect states in SnOx nanoparticles}, volume={99}, DOI={10.1063/1.2203408}, number={11113108},
journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Meier,
Cedrik and Lüttjohann, Stephan and Kravets, Vasyl G. and Nienhaus, Hermann and
Lorke, Axel and Ifeacho, Pascal and Wiggers, Hartmut and Schulz, Christof and
Kennedy, Marcus K. and Kruis, F. Einar}, year={2006} }'
chicago: Meier, Cedrik, Stephan Lüttjohann, Vasyl G. Kravets, Hermann Nienhaus,
Axel Lorke, Pascal Ifeacho, Hartmut Wiggers, Christof Schulz, Marcus K. Kennedy,
and F. Einar Kruis. “Vibrational and Defect States in SnOx Nanoparticles.” Journal
of Applied Physics 99, no. 11 (2006). https://doi.org/10.1063/1.2203408.
ieee: C. Meier et al., “Vibrational and defect states in SnOx nanoparticles,”
Journal of Applied Physics, vol. 99, no. 11, 2006.
mla: Meier, Cedrik, et al. “Vibrational and Defect States in SnOx Nanoparticles.”
Journal of Applied Physics, vol. 99, no. 11, 113108, AIP Publishing, 2006,
doi:10.1063/1.2203408.
short: C. Meier, S. Lüttjohann, V.G. Kravets, H. Nienhaus, A. Lorke, P. Ifeacho,
H. Wiggers, C. Schulz, M.K. Kennedy, F.E. Kruis, Journal of Applied Physics 99
(2006).
date_created: 2019-02-13T11:38:17Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2203408
extern: '1'
intvolume: ' 99'
issue: '11'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Vibrational and defect states in SnOx nanoparticles
type: journal_article
user_id: '20798'
volume: 99
year: '2006'
...
---
_id: '8651'
article_number: '073907'
author:
- first_name: N. C.
full_name: Gerhardt, N. C.
last_name: Gerhardt
- first_name: S.
full_name: Hövel, S.
last_name: Hövel
- first_name: C.
full_name: Brenner, C.
last_name: Brenner
- first_name: M. R.
full_name: Hofmann, M. R.
last_name: Hofmann
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: E.
full_name: Schuster, E.
last_name: Schuster
- first_name: W.
full_name: Keune, W.
last_name: Keune
- first_name: S.
full_name: Halm, S.
last_name: Halm
- first_name: G.
full_name: Bacher, G.
last_name: Bacher
- first_name: K.
full_name: Westerholt, K.
last_name: Westerholt
citation:
ama: Gerhardt NC, Hövel S, Brenner C, et al. Spin injection light-emitting diode
with vertically magnetized ferromagnetic metal contacts. Journal of Applied
Physics. 2006. doi:10.1063/1.2186376
apa: Gerhardt, N. C., Hövel, S., Brenner, C., Hofmann, M. R., Lo, F.-Y., Reuter,
D., … Westerholt, K. (2006). Spin injection light-emitting diode with vertically
magnetized ferromagnetic metal contacts. Journal of Applied Physics. https://doi.org/10.1063/1.2186376
bibtex: '@article{Gerhardt_Hövel_Brenner_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Halm_et
al._2006, title={Spin injection light-emitting diode with vertically magnetized
ferromagnetic metal contacts}, DOI={10.1063/1.2186376},
number={073907}, journal={Journal of Applied Physics}, author={Gerhardt, N. C.
and Hövel, S. and Brenner, C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk
and Wieck, A. D. and Schuster, E. and Keune, W. and Halm, S. and et al.}, year={2006}
}'
chicago: Gerhardt, N. C., S. Hövel, C. Brenner, M. R. Hofmann, F.-Y. Lo, Dirk Reuter,
A. D. Wieck, et al. “Spin Injection Light-Emitting Diode with Vertically Magnetized
Ferromagnetic Metal Contacts.” Journal of Applied Physics, 2006. https://doi.org/10.1063/1.2186376.
ieee: N. C. Gerhardt et al., “Spin injection light-emitting diode with vertically
magnetized ferromagnetic metal contacts,” Journal of Applied Physics, 2006.
mla: Gerhardt, N. C., et al. “Spin Injection Light-Emitting Diode with Vertically
Magnetized Ferromagnetic Metal Contacts.” Journal of Applied Physics, 073907,
2006, doi:10.1063/1.2186376.
short: N.C. Gerhardt, S. Hövel, C. Brenner, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D.
Wieck, E. Schuster, W. Keune, S. Halm, G. Bacher, K. Westerholt, Journal of Applied
Physics (2006).
date_created: 2019-03-27T07:57:04Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2186376
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: Spin injection light-emitting diode with vertically magnetized ferromagnetic
metal contacts
type: journal_article
user_id: '42514'
year: '2006'
...
---
_id: '29683'
article_number: '063903'
author:
- first_name: V.
full_name: Höink, V.
last_name: Höink
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
- first_name: J.
full_name: Schmalhorst, J.
last_name: Schmalhorst
- first_name: G.
full_name: Reiss, G.
last_name: Reiss
- first_name: D.
full_name: Engel, D.
last_name: Engel
- first_name: T.
full_name: Weis, T.
last_name: Weis
- first_name: A.
full_name: Ehresmann, A.
last_name: Ehresmann
citation:
ama: Höink V, Sacher M, Schmalhorst J, et al. Switchable resonant x-ray Bragg scattering
on a magnetic grating patterned by ion bombardment. Journal of Applied Physics.
2006;100(6). doi:10.1063/1.2349568
apa: Höink, V., Sacher, M., Schmalhorst, J., Reiss, G., Engel, D., Weis, T., &
Ehresmann, A. (2006). Switchable resonant x-ray Bragg scattering on a magnetic
grating patterned by ion bombardment. Journal of Applied Physics, 100(6),
Article 063903. https://doi.org/10.1063/1.2349568
bibtex: '@article{Höink_Sacher_Schmalhorst_Reiss_Engel_Weis_Ehresmann_2006, title={Switchable
resonant x-ray Bragg scattering on a magnetic grating patterned by ion bombardment},
volume={100}, DOI={10.1063/1.2349568},
number={6063903}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Höink, V. and Sacher, Marc and Schmalhorst, J. and Reiss, G. and Engel,
D. and Weis, T. and Ehresmann, A.}, year={2006} }'
chicago: Höink, V., Marc Sacher, J. Schmalhorst, G. Reiss, D. Engel, T. Weis, and
A. Ehresmann. “Switchable Resonant X-Ray Bragg Scattering on a Magnetic Grating
Patterned by Ion Bombardment.” Journal of Applied Physics 100, no. 6 (2006).
https://doi.org/10.1063/1.2349568.
ieee: 'V. Höink et al., “Switchable resonant x-ray Bragg scattering on a
magnetic grating patterned by ion bombardment,” Journal of Applied Physics,
vol. 100, no. 6, Art. no. 063903, 2006, doi: 10.1063/1.2349568.'
mla: Höink, V., et al. “Switchable Resonant X-Ray Bragg Scattering on a Magnetic
Grating Patterned by Ion Bombardment.” Journal of Applied Physics, vol.
100, no. 6, 063903, AIP Publishing, 2006, doi:10.1063/1.2349568.
short: V. Höink, M. Sacher, J. Schmalhorst, G. Reiss, D. Engel, T. Weis, A. Ehresmann,
Journal of Applied Physics 100 (2006).
date_created: 2022-01-31T10:15:57Z
date_updated: 2022-01-31T10:16:18Z
department:
- _id: '15'
- _id: '576'
doi: 10.1063/1.2349568
extern: '1'
intvolume: ' 100'
issue: '6'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Switchable resonant x-ray Bragg scattering on a magnetic grating patterned
by ion bombardment
type: journal_article
user_id: '26883'
volume: 100
year: '2006'
...
---
_id: '29681'
article_number: '113903'
author:
- first_name: J.
full_name: Schmalhorst, J.
last_name: Schmalhorst
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
- first_name: V.
full_name: Höink, V.
last_name: Höink
- first_name: G.
full_name: Reiss, G.
last_name: Reiss
- first_name: A.
full_name: Hütten, A.
last_name: Hütten
- first_name: D.
full_name: Engel, D.
last_name: Engel
- first_name: A.
full_name: Ehresmann, A.
last_name: Ehresmann
citation:
ama: Schmalhorst J, Sacher M, Höink V, et al. Magnetic and chemical properties
of Co[sub 2]MnSi thin films compared to the Co[sub 2]MnSi∕Al-O interface. Journal
of Applied Physics. 2006;100(11). doi:10.1063/1.2384806
apa: Schmalhorst, J., Sacher, M., Höink, V., Reiss, G., Hütten, A., Engel, D.,
& Ehresmann, A. (2006). Magnetic and chemical properties of Co[sub 2]MnSi
thin films compared to the Co[sub 2]MnSi∕Al-O interface. Journal of Applied
Physics, 100(11), Article 113903. https://doi.org/10.1063/1.2384806
bibtex: '@article{Schmalhorst_Sacher_Höink_Reiss_Hütten_Engel_Ehresmann_2006,
title={Magnetic and chemical properties of Co[sub 2]MnSi thin films compared to
the Co[sub 2]MnSi∕Al-O interface}, volume={100}, DOI={10.1063/1.2384806},
number={11113903}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Schmalhorst, J. and Sacher, Marc and Höink, V. and Reiss, G. and Hütten,
A. and Engel, D. and Ehresmann, A.}, year={2006} }'
chicago: Schmalhorst, J., Marc Sacher, V. Höink, G. Reiss, A. Hütten, D. Engel,
and A. Ehresmann. “Magnetic and Chemical Properties of Co[Sub 2]MnSi Thin Films
Compared to the Co[Sub 2]MnSi∕Al-O Interface.” Journal of Applied Physics
100, no. 11 (2006). https://doi.org/10.1063/1.2384806.
ieee: 'J. Schmalhorst et al., “Magnetic and chemical properties of Co[sub
2]MnSi thin films compared to the Co[sub 2]MnSi∕Al-O interface,” Journal of
Applied Physics, vol. 100, no. 11, Art. no. 113903, 2006, doi: 10.1063/1.2384806.'
mla: Schmalhorst, J., et al. “Magnetic and Chemical Properties of Co[Sub 2]MnSi
Thin Films Compared to the Co[Sub 2]MnSi∕Al-O Interface.” Journal of Applied
Physics, vol. 100, no. 11, 113903, AIP Publishing, 2006, doi:10.1063/1.2384806.
short: J. Schmalhorst, M. Sacher, V. Höink, G. Reiss, A. Hütten, D. Engel, A.
Ehresmann, Journal of Applied Physics 100 (2006).
date_created: 2022-01-31T10:14:42Z
date_updated: 2022-01-31T10:15:05Z
department:
- _id: '15'
- _id: '576'
doi: 10.1063/1.2384806
extern: '1'
intvolume: ' 100'
issue: '11'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
publication_status: published
publisher: AIP Publishing
status: public
title: Magnetic and chemical properties of Co[sub 2]MnSi thin films compared to the
Co[sub 2]MnSi∕Al-O interface
type: journal_article
user_id: '26883'
volume: 100
year: '2006'
...
---
_id: '39761'
article_number: '113101'
author:
- first_name: Lutz
full_name: Paelke, Lutz
last_name: Paelke
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Paelke L, Kitzerow H-S. Space charge field and dynamics of the grating formation
in a photorefractive polymer-dispersed liquid crystal based on a photoconducting
polysiloxane. Journal of Applied Physics. 2006;100(11). doi:10.1063/1.2372434
apa: Paelke, L., & Kitzerow, H.-S. (2006). Space charge field and dynamics of
the grating formation in a photorefractive polymer-dispersed liquid crystal based
on a photoconducting polysiloxane. Journal of Applied Physics, 100(11),
Article 113101. https://doi.org/10.1063/1.2372434
bibtex: '@article{Paelke_Kitzerow_2006, title={Space charge field and dynamics of
the grating formation in a photorefractive polymer-dispersed liquid crystal based
on a photoconducting polysiloxane}, volume={100}, DOI={10.1063/1.2372434},
number={11113101}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Paelke, Lutz and Kitzerow, Heinz-Siegfried}, year={2006} }'
chicago: Paelke, Lutz, and Heinz-Siegfried Kitzerow. “Space Charge Field and Dynamics
of the Grating Formation in a Photorefractive Polymer-Dispersed Liquid Crystal
Based on a Photoconducting Polysiloxane.” Journal of Applied Physics 100,
no. 11 (2006). https://doi.org/10.1063/1.2372434.
ieee: 'L. Paelke and H.-S. Kitzerow, “Space charge field and dynamics of the grating
formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting
polysiloxane,” Journal of Applied Physics, vol. 100, no. 11, Art. no. 113101,
2006, doi: 10.1063/1.2372434.'
mla: Paelke, Lutz, and Heinz-Siegfried Kitzerow. “Space Charge Field and Dynamics
of the Grating Formation in a Photorefractive Polymer-Dispersed Liquid Crystal
Based on a Photoconducting Polysiloxane.” Journal of Applied Physics, vol.
100, no. 11, 113101, AIP Publishing, 2006, doi:10.1063/1.2372434.
short: L. Paelke, H.-S. Kitzerow, Journal of Applied Physics 100 (2006).
date_created: 2023-01-24T19:08:50Z
date_updated: 2023-01-24T19:09:08Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.2372434
intvolume: ' 100'
issue: '11'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
publication_status: published
publisher: AIP Publishing
status: public
title: Space charge field and dynamics of the grating formation in a photorefractive
polymer-dispersed liquid crystal based on a photoconducting polysiloxane
type: journal_article
user_id: '254'
volume: 100
year: '2006'
...
---
_id: '7657'
article_number: '084306'
author:
- first_name: Vasyl G.
full_name: Kravets, Vasyl G.
last_name: Kravets
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Denan
full_name: Konjhodzic, Denan
last_name: Konjhodzic
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Hartmut
full_name: Wiggers, Hartmut
last_name: Wiggers
citation:
ama: Kravets VG, Meier C, Konjhodzic D, Lorke A, Wiggers H. Infrared properties
of silicon nanoparticles. Journal of Applied Physics. 2005;97(8). doi:10.1063/1.1866475
apa: Kravets, V. G., Meier, C., Konjhodzic, D., Lorke, A., & Wiggers, H. (2005).
Infrared properties of silicon nanoparticles. Journal of Applied Physics,
97(8). https://doi.org/10.1063/1.1866475
bibtex: '@article{Kravets_Meier_Konjhodzic_Lorke_Wiggers_2005, title={Infrared properties
of silicon nanoparticles}, volume={97}, DOI={10.1063/1.1866475},
number={8084306}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Kravets, Vasyl G. and Meier, Cedrik and Konjhodzic, Denan and Lorke, Axel
and Wiggers, Hartmut}, year={2005} }'
chicago: Kravets, Vasyl G., Cedrik Meier, Denan Konjhodzic, Axel Lorke, and Hartmut
Wiggers. “Infrared Properties of Silicon Nanoparticles.” Journal of Applied
Physics 97, no. 8 (2005). https://doi.org/10.1063/1.1866475.
ieee: V. G. Kravets, C. Meier, D. Konjhodzic, A. Lorke, and H. Wiggers, “Infrared
properties of silicon nanoparticles,” Journal of Applied Physics, vol.
97, no. 8, 2005.
mla: Kravets, Vasyl G., et al. “Infrared Properties of Silicon Nanoparticles.” Journal
of Applied Physics, vol. 97, no. 8, 084306, AIP Publishing, 2005, doi:10.1063/1.1866475.
short: V.G. Kravets, C. Meier, D. Konjhodzic, A. Lorke, H. Wiggers, Journal of Applied
Physics 97 (2005).
date_created: 2019-02-13T11:51:22Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1866475
extern: '1'
intvolume: ' 97'
issue: '8'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Infrared properties of silicon nanoparticles
type: journal_article
user_id: '20798'
volume: 97
year: '2005'
...
---
_id: '29689'
article_number: '123711'
author:
- first_name: J.
full_name: Schmalhorst, J.
last_name: Schmalhorst
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
- first_name: A.
full_name: Thomas, A.
last_name: Thomas
- first_name: H.
full_name: Brückl, H.
last_name: Brückl
- first_name: G.
full_name: Reiss, G.
last_name: Reiss
- first_name: K.
full_name: Starke, K.
last_name: Starke
citation:
ama: Schmalhorst J, Sacher M, Thomas A, Brückl H, Reiss G, Starke K. X-ray absorption
and magnetic circular dichroism studies of annealed magnetic tunnel junctions.
Journal of Applied Physics. 2005;97(12). doi:10.1063/1.1939086
apa: Schmalhorst, J., Sacher, M., Thomas, A., Brückl, H., Reiss, G., & Starke,
K. (2005). X-ray absorption and magnetic circular dichroism studies of annealed
magnetic tunnel junctions. Journal of Applied Physics, 97(12), Article
123711. https://doi.org/10.1063/1.1939086
bibtex: '@article{Schmalhorst_Sacher_Thomas_Brückl_Reiss_Starke_2005, title={X-ray
absorption and magnetic circular dichroism studies of annealed magnetic tunnel
junctions}, volume={97}, DOI={10.1063/1.1939086},
number={12123711}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Schmalhorst, J. and Sacher, Marc and Thomas, A. and Brückl, H. and Reiss,
G. and Starke, K.}, year={2005} }'
chicago: Schmalhorst, J., Marc Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke.
“X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic
Tunnel Junctions.” Journal of Applied Physics 97, no. 12 (2005). https://doi.org/10.1063/1.1939086.
ieee: 'J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke,
“X-ray absorption and magnetic circular dichroism studies of annealed magnetic
tunnel junctions,” Journal of Applied Physics, vol. 97, no. 12, Art. no.
123711, 2005, doi: 10.1063/1.1939086.'
mla: Schmalhorst, J., et al. “X-Ray Absorption and Magnetic Circular Dichroism Studies
of Annealed Magnetic Tunnel Junctions.” Journal of Applied Physics, vol.
97, no. 12, 123711, AIP Publishing, 2005, doi:10.1063/1.1939086.
short: J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, K. Starke, Journal
of Applied Physics 97 (2005).
date_created: 2022-01-31T10:20:49Z
date_updated: 2022-01-31T10:21:05Z
department:
- _id: '15'
- _id: '576'
doi: 10.1063/1.1939086
extern: '1'
intvolume: ' 97'
issue: '12'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: X-ray absorption and magnetic circular dichroism studies of annealed magnetic
tunnel junctions
type: journal_article
user_id: '26883'
volume: 97
year: '2005'
...
---
_id: '29688'
article_number: '123711'
author:
- first_name: J.
full_name: Schmalhorst, J.
last_name: Schmalhorst
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
- first_name: A.
full_name: Thomas, A.
last_name: Thomas
- first_name: H.
full_name: Brückl, H.
last_name: Brückl
- first_name: G.
full_name: Reiss, G.
last_name: Reiss
- first_name: K.
full_name: Starke, K.
last_name: Starke
citation:
ama: Schmalhorst J, Sacher M, Thomas A, Brückl H, Reiss G, Starke K. X-ray absorption
and magnetic circular dichroism studies of annealed magnetic tunnel junctions.
Journal of Applied Physics. 2005;97(12). doi:10.1063/1.1939086
apa: Schmalhorst, J., Sacher, M., Thomas, A., Brückl, H., Reiss, G., & Starke,
K. (2005). X-ray absorption and magnetic circular dichroism studies of annealed
magnetic tunnel junctions. Journal of Applied Physics, 97(12), Article
123711. https://doi.org/10.1063/1.1939086
bibtex: '@article{Schmalhorst_Sacher_Thomas_Brückl_Reiss_Starke_2005, title={X-ray
absorption and magnetic circular dichroism studies of annealed magnetic tunnel
junctions}, volume={97}, DOI={10.1063/1.1939086},
number={12123711}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Schmalhorst, J. and Sacher, Marc and Thomas, A. and Brückl, H. and Reiss,
G. and Starke, K.}, year={2005} }'
chicago: Schmalhorst, J., Marc Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke.
“X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic
Tunnel Junctions.” Journal of Applied Physics 97, no. 12 (2005). https://doi.org/10.1063/1.1939086.
ieee: 'J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke,
“X-ray absorption and magnetic circular dichroism studies of annealed magnetic
tunnel junctions,” Journal of Applied Physics, vol. 97, no. 12, Art. no.
123711, 2005, doi: 10.1063/1.1939086.'
mla: Schmalhorst, J., et al. “X-Ray Absorption and Magnetic Circular Dichroism Studies
of Annealed Magnetic Tunnel Junctions.” Journal of Applied Physics, vol.
97, no. 12, 123711, AIP Publishing, 2005, doi:10.1063/1.1939086.
short: J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, K. Starke, Journal
of Applied Physics 97 (2005).
date_created: 2022-01-31T10:19:13Z
date_updated: 2022-01-31T10:19:34Z
department:
- _id: '15'
- _id: '576'
doi: 10.1063/1.1939086
extern: '1'
intvolume: ' 97'
issue: '12'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: X-ray absorption and magnetic circular dichroism studies of annealed magnetic
tunnel junctions
type: journal_article
user_id: '26883'
volume: 97
year: '2005'
...
---
_id: '29687'
article_number: '103532'
author:
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
- first_name: J.
full_name: Sauerwald, J.
last_name: Sauerwald
- first_name: J.
full_name: Schmalhorst, J.
last_name: Schmalhorst
- first_name: G.
full_name: Reiss, G.
last_name: Reiss
citation:
ama: Sacher M, Sauerwald J, Schmalhorst J, Reiss G. Influence of noble-gas ion irradiation
on alumina barrier of magnetic tunnel junctions. Journal of Applied Physics.
2005;98(10). doi:10.1063/1.2134883
apa: Sacher, M., Sauerwald, J., Schmalhorst, J., & Reiss, G. (2005). Influence
of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions.
Journal of Applied Physics, 98(10), Article 103532. https://doi.org/10.1063/1.2134883
bibtex: '@article{Sacher_Sauerwald_Schmalhorst_Reiss_2005, title={Influence of noble-gas
ion irradiation on alumina barrier of magnetic tunnel junctions}, volume={98},
DOI={10.1063/1.2134883}, number={10103532},
journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Sacher,
Marc and Sauerwald, J. and Schmalhorst, J. and Reiss, G.}, year={2005} }'
chicago: Sacher, Marc, J. Sauerwald, J. Schmalhorst, and G. Reiss. “Influence of
Noble-Gas Ion Irradiation on Alumina Barrier of Magnetic Tunnel Junctions.” Journal
of Applied Physics 98, no. 10 (2005). https://doi.org/10.1063/1.2134883.
ieee: 'M. Sacher, J. Sauerwald, J. Schmalhorst, and G. Reiss, “Influence of noble-gas
ion irradiation on alumina barrier of magnetic tunnel junctions,” Journal of
Applied Physics, vol. 98, no. 10, Art. no. 103532, 2005, doi: 10.1063/1.2134883.'
mla: Sacher, Marc, et al. “Influence of Noble-Gas Ion Irradiation on Alumina Barrier
of Magnetic Tunnel Junctions.” Journal of Applied Physics, vol. 98, no.
10, 103532, AIP Publishing, 2005, doi:10.1063/1.2134883.
short: M. Sacher, J. Sauerwald, J. Schmalhorst, G. Reiss, Journal of Applied Physics
98 (2005).
date_created: 2022-01-31T10:18:33Z
date_updated: 2022-01-31T10:18:52Z
department:
- _id: '15'
- _id: '576'
doi: 10.1063/1.2134883
extern: '1'
intvolume: ' 98'
issue: '10'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel
junctions
type: journal_article
user_id: '26883'
volume: 98
year: '2005'
...
---
_id: '39770'
article_number: '033519'
author:
- first_name: N.
full_name: Stich, N.
last_name: Stich
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Stich N, Kitzerow H-S. Superposition of patterns in cross-linked liquid crystals.
Journal of Applied Physics. 2005;97(3). doi:10.1063/1.1832744
apa: Stich, N., & Kitzerow, H.-S. (2005). Superposition of patterns in cross-linked
liquid crystals. Journal of Applied Physics, 97(3), Article 033519.
https://doi.org/10.1063/1.1832744
bibtex: '@article{Stich_Kitzerow_2005, title={Superposition of patterns in cross-linked
liquid crystals}, volume={97}, DOI={10.1063/1.1832744},
number={3033519}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Stich, N. and Kitzerow, Heinz-Siegfried}, year={2005} }'
chicago: Stich, N., and Heinz-Siegfried Kitzerow. “Superposition of Patterns in
Cross-Linked Liquid Crystals.” Journal of Applied Physics 97, no. 3 (2005).
https://doi.org/10.1063/1.1832744.
ieee: 'N. Stich and H.-S. Kitzerow, “Superposition of patterns in cross-linked liquid
crystals,” Journal of Applied Physics, vol. 97, no. 3, Art. no. 033519,
2005, doi: 10.1063/1.1832744.'
mla: Stich, N., and Heinz-Siegfried Kitzerow. “Superposition of Patterns in Cross-Linked
Liquid Crystals.” Journal of Applied Physics, vol. 97, no. 3, 033519, AIP
Publishing, 2005, doi:10.1063/1.1832744.
short: N. Stich, H.-S. Kitzerow, Journal of Applied Physics 97 (2005).
date_created: 2023-01-24T19:14:46Z
date_updated: 2023-01-24T19:15:41Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.1832744
intvolume: ' 97'
issue: '3'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Superposition of patterns in cross-linked liquid crystals
type: journal_article
user_id: '254'
volume: 97
year: '2005'
...
---
_id: '8706'
author:
- first_name: K. H.
full_name: Schmidt, K. H.
last_name: Schmidt
- first_name: C.
full_name: Bock, C.
last_name: Bock
- first_name: M.
full_name: Versen, M.
last_name: Versen
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Schmidt KH, Bock C, Versen M, Kunze U, Reuter D, Wieck AD. Capacitance and
tunneling spectroscopy of InAs quantum dots. Journal of Applied Physics.
2004:5715-5721. doi:10.1063/1.1703827
apa: Schmidt, K. H., Bock, C., Versen, M., Kunze, U., Reuter, D., & Wieck, A.
D. (2004). Capacitance and tunneling spectroscopy of InAs quantum dots. Journal
of Applied Physics, 5715–5721. https://doi.org/10.1063/1.1703827
bibtex: '@article{Schmidt_Bock_Versen_Kunze_Reuter_Wieck_2004, title={Capacitance
and tunneling spectroscopy of InAs quantum dots}, DOI={10.1063/1.1703827},
journal={Journal of Applied Physics}, author={Schmidt, K. H. and Bock, C. and
Versen, M. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2004}, pages={5715–5721}
}'
chicago: Schmidt, K. H., C. Bock, M. Versen, U. Kunze, Dirk Reuter, and A. D. Wieck.
“Capacitance and Tunneling Spectroscopy of InAs Quantum Dots.” Journal of Applied
Physics, 2004, 5715–21. https://doi.org/10.1063/1.1703827.
ieee: K. H. Schmidt, C. Bock, M. Versen, U. Kunze, D. Reuter, and A. D. Wieck, “Capacitance
and tunneling spectroscopy of InAs quantum dots,” Journal of Applied Physics,
pp. 5715–5721, 2004.
mla: Schmidt, K. H., et al. “Capacitance and Tunneling Spectroscopy of InAs Quantum
Dots.” Journal of Applied Physics, 2004, pp. 5715–21, doi:10.1063/1.1703827.
short: K.H. Schmidt, C. Bock, M. Versen, U. Kunze, D. Reuter, A.D. Wieck, Journal
of Applied Physics (2004) 5715–5721.
date_created: 2019-03-27T12:14:53Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1703827
language:
- iso: eng
page: 5715-5721
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: Capacitance and tunneling spectroscopy of InAs quantum dots
type: journal_article
user_id: '42514'
year: '2004'
...
---
_id: '29692'
author:
- first_name: T.
full_name: Dimopoulos, T.
last_name: Dimopoulos
- first_name: G.
full_name: Gieres, G.
last_name: Gieres
- first_name: J.
full_name: Wecker, J.
last_name: Wecker
- first_name: N.
full_name: Wiese, N.
last_name: Wiese
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
citation:
ama: Dimopoulos T, Gieres G, Wecker J, Wiese N, Sacher M. Thermal annealing of junctions
with amorphous and polycrystalline ferromagnetic electrodes. Journal of Applied
Physics. 2004;96(11):6382-6386. doi:10.1063/1.1808899
apa: Dimopoulos, T., Gieres, G., Wecker, J., Wiese, N., & Sacher, M. (2004).
Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic
electrodes. Journal of Applied Physics, 96(11), 6382–6386. https://doi.org/10.1063/1.1808899
bibtex: '@article{Dimopoulos_Gieres_Wecker_Wiese_Sacher_2004, title={Thermal annealing
of junctions with amorphous and polycrystalline ferromagnetic electrodes}, volume={96},
DOI={10.1063/1.1808899}, number={11},
journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Dimopoulos,
T. and Gieres, G. and Wecker, J. and Wiese, N. and Sacher, Marc}, year={2004},
pages={6382–6386} }'
chicago: 'Dimopoulos, T., G. Gieres, J. Wecker, N. Wiese, and Marc Sacher. “Thermal
Annealing of Junctions with Amorphous and Polycrystalline Ferromagnetic Electrodes.”
Journal of Applied Physics 96, no. 11 (2004): 6382–86. https://doi.org/10.1063/1.1808899.'
ieee: 'T. Dimopoulos, G. Gieres, J. Wecker, N. Wiese, and M. Sacher, “Thermal annealing
of junctions with amorphous and polycrystalline ferromagnetic electrodes,” Journal
of Applied Physics, vol. 96, no. 11, pp. 6382–6386, 2004, doi: 10.1063/1.1808899.'
mla: Dimopoulos, T., et al. “Thermal Annealing of Junctions with Amorphous and Polycrystalline
Ferromagnetic Electrodes.” Journal of Applied Physics, vol. 96, no. 11,
AIP Publishing, 2004, pp. 6382–86, doi:10.1063/1.1808899.
short: T. Dimopoulos, G. Gieres, J. Wecker, N. Wiese, M. Sacher, Journal of Applied
Physics 96 (2004) 6382–6386.
date_created: 2022-01-31T10:23:21Z
date_updated: 2022-01-31T10:23:40Z
department:
- _id: '15'
- _id: '576'
doi: 10.1063/1.1808899
intvolume: ' 96'
issue: '11'
keyword:
- General Physics and Astronomy
language:
- iso: eng
page: 6382-6386
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic
electrodes
type: journal_article
user_id: '26883'
volume: 96
year: '2004'
...
---
_id: '7681'
author:
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Dirk
full_name: Reuter, Dirk
last_name: Reuter
- first_name: Christof
full_name: Riedesel, Christof
last_name: Riedesel
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Meier C, Reuter D, Riedesel C, Wieck AD. Fabrication of two-dimensional electron
systems by focused ion beam doping of III/V semiconductor heterostructures. Journal
of Applied Physics. 2003;93(10):6100-6106. doi:10.1063/1.1563032
apa: Meier, C., Reuter, D., Riedesel, C., & Wieck, A. D. (2003). Fabrication
of two-dimensional electron systems by focused ion beam doping of III/V semiconductor
heterostructures. Journal of Applied Physics, 93(10), 6100–6106.
https://doi.org/10.1063/1.1563032
bibtex: '@article{Meier_Reuter_Riedesel_Wieck_2003, title={Fabrication of two-dimensional
electron systems by focused ion beam doping of III/V semiconductor heterostructures},
volume={93}, DOI={10.1063/1.1563032},
number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Meier, Cedrik and Reuter, Dirk and Riedesel, Christof and Wieck, Andreas
D.}, year={2003}, pages={6100–6106} }'
chicago: 'Meier, Cedrik, Dirk Reuter, Christof Riedesel, and Andreas D. Wieck. “Fabrication
of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor
Heterostructures.” Journal of Applied Physics 93, no. 10 (2003): 6100–6106.
https://doi.org/10.1063/1.1563032.'
ieee: C. Meier, D. Reuter, C. Riedesel, and A. D. Wieck, “Fabrication of two-dimensional
electron systems by focused ion beam doping of III/V semiconductor heterostructures,”
Journal of Applied Physics, vol. 93, no. 10, pp. 6100–6106, 2003.
mla: Meier, Cedrik, et al. “Fabrication of Two-Dimensional Electron Systems by Focused
Ion Beam Doping of III/V Semiconductor Heterostructures.” Journal of Applied
Physics, vol. 93, no. 10, AIP Publishing, 2003, pp. 6100–06, doi:10.1063/1.1563032.
short: C. Meier, D. Reuter, C. Riedesel, A.D. Wieck, Journal of Applied Physics
93 (2003) 6100–6106.
date_created: 2019-02-13T14:49:57Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1563032
extern: '1'
intvolume: ' 93'
issue: '10'
language:
- iso: eng
page: 6100-6106
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Fabrication of two-dimensional electron systems by focused ion beam doping
of III/V semiconductor heterostructures
type: journal_article
user_id: '20798'
volume: 93
year: '2003'
...
---
_id: '8720'
author:
- first_name: Cedrik
full_name: Meier, Cedrik
last_name: Meier
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Christof
full_name: Riedesel, Christof
last_name: Riedesel
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Meier C, Reuter D, Riedesel C, Wieck AD. Fabrication of two-dimensional electron
systems by focused ion beam doping of III/V semiconductor heterostructures. Journal
of Applied Physics. 2003:6100-6106. doi:10.1063/1.1563032
apa: Meier, C., Reuter, D., Riedesel, C., & Wieck, A. D. (2003). Fabrication
of two-dimensional electron systems by focused ion beam doping of III/V semiconductor
heterostructures. Journal of Applied Physics, 6100–6106. https://doi.org/10.1063/1.1563032
bibtex: '@article{Meier_Reuter_Riedesel_Wieck_2003, title={Fabrication of two-dimensional
electron systems by focused ion beam doping of III/V semiconductor heterostructures},
DOI={10.1063/1.1563032}, journal={Journal
of Applied Physics}, author={Meier, Cedrik and Reuter, Dirk and Riedesel, Christof
and Wieck, Andreas D.}, year={2003}, pages={6100–6106} }'
chicago: Meier, Cedrik, Dirk Reuter, Christof Riedesel, and Andreas D. Wieck. “Fabrication
of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor
Heterostructures.” Journal of Applied Physics, 2003, 6100–6106. https://doi.org/10.1063/1.1563032.
ieee: C. Meier, D. Reuter, C. Riedesel, and A. D. Wieck, “Fabrication of two-dimensional
electron systems by focused ion beam doping of III/V semiconductor heterostructures,”
Journal of Applied Physics, pp. 6100–6106, 2003.
mla: Meier, Cedrik, et al. “Fabrication of Two-Dimensional Electron Systems by Focused
Ion Beam Doping of III/V Semiconductor Heterostructures.” Journal of Applied
Physics, 2003, pp. 6100–06, doi:10.1063/1.1563032.
short: C. Meier, D. Reuter, C. Riedesel, A.D. Wieck, Journal of Applied Physics
(2003) 6100–6106.
date_created: 2019-03-28T14:54:53Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1563032
language:
- iso: eng
page: 6100-6106
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: Fabrication of two-dimensional electron systems by focused ion beam doping
of III/V semiconductor heterostructures
type: journal_article
user_id: '42514'
year: '2003'
...