--- _id: '47994' abstract: - lang: eng text: Coherent nonlinear optical μ-spectroscopy is a frequently used tool in modern material science as it is sensitive to many different local observables, which comprise, among others, crystal symmetry and vibrational properties. The richness in information, however, may come with challenges in data interpretation, as one has to disentangle the many different effects like multiple reflections, phase jumps at interfaces, or the influence of the Guoy-phase. In order to facilitate interpretation, the work presented here proposes an easy-to-use semi-analytical modeling Ansatz, which bases upon known analytical solutions using Gaussian beams. Specifically, we apply this Ansatz to compute nonlinear optical responses of (thin film) optical materials. We try to conserve the meaning of intuitive parameters like the Gouy-phase and the nonlinear coherent interaction length. In particular, the concept of coherence length is extended, which is a must when using focal beams. The model is subsequently applied to exemplary cases of second- and third-harmonic generation. We observe a very good agreement with experimental data, and furthermore, despite the constraints and limits of the analytical Ansatz, our model performs similarly well as when using more rigorous simulations. However, it outperforms the latter in terms of computational power, requiring more than three orders less computational time and less performant computer systems. article_number: '123105' article_type: original author: - first_name: Kai J. full_name: Spychala, Kai J. last_name: Spychala - first_name: Zeeshan H. full_name: Amber, Zeeshan H. last_name: Amber - first_name: Lukas M. full_name: Eng, Lukas M. last_name: Eng - first_name: Michael full_name: Rüsing, Michael id: '22501' last_name: Rüsing orcid: 0000-0003-4682-4577 citation: ama: 'Spychala KJ, Amber ZH, Eng LM, Rüsing M. Modeling nonlinear optical interactions of focused beams in bulk crystals and thin films: A phenomenological approach. Journal of Applied Physics. 2023;133(12). doi:10.1063/5.0136252' apa: 'Spychala, K. J., Amber, Z. H., Eng, L. M., & Rüsing, M. (2023). Modeling nonlinear optical interactions of focused beams in bulk crystals and thin films: A phenomenological approach. Journal of Applied Physics, 133(12), Article 123105. https://doi.org/10.1063/5.0136252' bibtex: '@article{Spychala_Amber_Eng_Rüsing_2023, title={Modeling nonlinear optical interactions of focused beams in bulk crystals and thin films: A phenomenological approach}, volume={133}, DOI={10.1063/5.0136252}, number={12123105}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Spychala, Kai J. and Amber, Zeeshan H. and Eng, Lukas M. and Rüsing, Michael}, year={2023} }' chicago: 'Spychala, Kai J., Zeeshan H. Amber, Lukas M. Eng, and Michael Rüsing. “Modeling Nonlinear Optical Interactions of Focused Beams in Bulk Crystals and Thin Films: A Phenomenological Approach.” Journal of Applied Physics 133, no. 12 (2023). https://doi.org/10.1063/5.0136252.' ieee: 'K. J. Spychala, Z. H. Amber, L. M. Eng, and M. Rüsing, “Modeling nonlinear optical interactions of focused beams in bulk crystals and thin films: A phenomenological approach,” Journal of Applied Physics, vol. 133, no. 12, Art. no. 123105, 2023, doi: 10.1063/5.0136252.' mla: 'Spychala, Kai J., et al. “Modeling Nonlinear Optical Interactions of Focused Beams in Bulk Crystals and Thin Films: A Phenomenological Approach.” Journal of Applied Physics, vol. 133, no. 12, 123105, AIP Publishing, 2023, doi:10.1063/5.0136252.' short: K.J. Spychala, Z.H. Amber, L.M. Eng, M. Rüsing, Journal of Applied Physics 133 (2023). date_created: 2023-10-11T09:09:00Z date_updated: 2023-10-11T16:10:54Z doi: 10.1063/5.0136252 extern: '1' intvolume: ' 133' issue: '12' keyword: - General Physics and Astronomy language: - iso: eng main_file_link: - open_access: '1' url: ' https://doi.org/10.1063/5.0136252' oa: '1' publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing quality_controlled: '1' status: public title: 'Modeling nonlinear optical interactions of focused beams in bulk crystals and thin films: A phenomenological approach' type: journal_article user_id: '22501' volume: 133 year: '2023' ... --- _id: '46573' abstract: - lang: eng text: 'An ultra-fast change of the absorption onset for zincblende gallium-nitride (zb-GaN) (fundamental bandgap: 3.23 eV) is observed by investigating the imaginary part of the dielectric function using time-dependent femtosecond pump–probe spectroscopic ellipsometry between 2.9 and 3.7 eV. The 266 nm (4.66 eV) pump pulses induce a large electron–hole pair concentration up to 4×1020cm−3, which shift the transition energy between conduction and valence bands due to many-body effects up to ≈500 meV. Here, the absorption onset increases due to band filling while the bandgap renormalization at the same time decreases the bandgap. Additionally, the absorption of the pump-beam creates a free-carrier profile within the 605 nm zb-GaN layer with high free-carrier concentrations at the surface, and low concentrations at the interface to the substrate. This leads to varying optical properties from the sample surface (high transition energy) to substrate (low transition energy), which are taken into account by grading analysis for an accurate description of the experimental data. For this, a model describing the time- and position-dependent free-carrier concentration is formulated by considering the relaxation, recombination, and diffusion of those carriers. We provide a quantitative analysis of optical experimental data (ellipsometric angles Ψ and Δ) as well as a plot for the time-dependent change of the imaginary part of the dielectric function.' author: - first_name: Elias full_name: Baron, Elias last_name: Baron - first_name: Rüdiger full_name: Goldhahn, Rüdiger last_name: Goldhahn - first_name: Shirly full_name: Espinoza, Shirly last_name: Espinoza - first_name: Martin full_name: Zahradník, Martin last_name: Zahradník - first_name: Mateusz full_name: Rebarz, Mateusz last_name: Rebarz - first_name: Jakob full_name: Andreasson, Jakob last_name: Andreasson - first_name: Michael full_name: Deppe, Michael last_name: Deppe - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 - first_name: Martin full_name: Feneberg, Martin last_name: Feneberg citation: ama: Baron E, Goldhahn R, Espinoza S, et al. Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function. Journal of Applied Physics. 2023;134(7). doi:10.1063/5.0153091 apa: Baron, E., Goldhahn, R., Espinoza, S., Zahradník, M., Rebarz, M., Andreasson, J., Deppe, M., As, D. J., & Feneberg, M. (2023). Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function. Journal of Applied Physics, 134(7). https://doi.org/10.1063/5.0153091 bibtex: '@article{Baron_Goldhahn_Espinoza_Zahradník_Rebarz_Andreasson_Deppe_As_Feneberg_2023, title={Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function}, volume={134}, DOI={10.1063/5.0153091}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Baron, Elias and Goldhahn, Rüdiger and Espinoza, Shirly and Zahradník, Martin and Rebarz, Mateusz and Andreasson, Jakob and Deppe, Michael and As, Donat Josef and Feneberg, Martin}, year={2023} }' chicago: Baron, Elias, Rüdiger Goldhahn, Shirly Espinoza, Martin Zahradník, Mateusz Rebarz, Jakob Andreasson, Michael Deppe, Donat Josef As, and Martin Feneberg. “Time-Resolved Pump–Probe Spectroscopic Ellipsometry of Cubic GaN. I. Determination of the Dielectric Function.” Journal of Applied Physics 134, no. 7 (2023). https://doi.org/10.1063/5.0153091. ieee: 'E. Baron et al., “Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function,” Journal of Applied Physics, vol. 134, no. 7, 2023, doi: 10.1063/5.0153091.' mla: Baron, Elias, et al. “Time-Resolved Pump–Probe Spectroscopic Ellipsometry of Cubic GaN. I. Determination of the Dielectric Function.” Journal of Applied Physics, vol. 134, no. 7, AIP Publishing, 2023, doi:10.1063/5.0153091. short: E. Baron, R. Goldhahn, S. Espinoza, M. Zahradník, M. Rebarz, J. Andreasson, M. Deppe, D.J. As, M. Feneberg, Journal of Applied Physics 134 (2023). date_created: 2023-08-18T08:17:41Z date_updated: 2023-10-09T09:17:15Z department: - _id: '15' - _id: '230' doi: 10.1063/5.0153091 intvolume: ' 134' issue: '7' keyword: - General Physics and Astronomy language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function type: journal_article user_id: '14931' volume: 134 year: '2023' ... --- _id: '34056' abstract: - lang: eng text: ' A process sequence enabling the large-area fabrication of nanopillar-patterned semiconductor templates for selective-area heteroepitaxy is developed. Herein, the nanopillar tops surrounded by a SiNx mask film serve as nanoscale growth areas. The molecular beam epitaxial growth of InAs on such patterned GaAs[Formula: see text]A templates is investigated by means of electron microscopy. It is found that defect-free nanoscale InAs islands grow selectively on the nanopillar tops at a substrate temperature of 425 °C. High-angle annular dark-field scanning transmission electron microscopy imaging reveals that for a growth temperature of 400 °C, the InAs islands show a tendency to form wurtzite phase arms extending along the lateral [Formula: see text] directions from the central zinc blende region of the islands. This is ascribed to a temporary self-catalyzed vapor–liquid–solid growth on [Formula: see text] B facets, which leads to a kinetically induced preference for the nucleation of the wurtzite phase driven by the local, instantaneous V/III ratio, and to a concomitant reduction of surface energy of the nanoscale diameter arms. ' article_number: '185701' author: - first_name: Thomas full_name: Riedl, Thomas id: '36950' last_name: Riedl - first_name: Vinay S. full_name: Kunnathully, Vinay S. last_name: Kunnathully - first_name: Akshay Kumar full_name: Verma, Akshay Kumar id: '72998' last_name: Verma - first_name: Timo full_name: Langer, Timo last_name: Langer - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Björn full_name: Büker, Björn last_name: Büker - first_name: Andreas full_name: Hütten, Andreas last_name: Hütten - first_name: Jörg full_name: Lindner, Jörg id: '20797' last_name: Lindner citation: ama: Riedl T, Kunnathully VS, Verma AK, et al. Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A. Journal of Applied Physics. 2022;132(18). doi:10.1063/5.0121559 apa: Riedl, T., Kunnathully, V. S., Verma, A. K., Langer, T., Reuter, D., Büker, B., Hütten, A., & Lindner, J. (2022). Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A. Journal of Applied Physics, 132(18), Article 185701. https://doi.org/10.1063/5.0121559 bibtex: '@article{Riedl_Kunnathully_Verma_Langer_Reuter_Büker_Hütten_Lindner_2022, title={Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A}, volume={132}, DOI={10.1063/5.0121559}, number={18185701}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Riedl, Thomas and Kunnathully, Vinay S. and Verma, Akshay Kumar and Langer, Timo and Reuter, Dirk and Büker, Björn and Hütten, Andreas and Lindner, Jörg}, year={2022} }' chicago: Riedl, Thomas, Vinay S. Kunnathully, Akshay Kumar Verma, Timo Langer, Dirk Reuter, Björn Büker, Andreas Hütten, and Jörg Lindner. “Selective Area Heteroepitaxy of InAs Nanostructures on Nanopillar-Patterned GaAs(111)A.” Journal of Applied Physics 132, no. 18 (2022). https://doi.org/10.1063/5.0121559. ieee: 'T. Riedl et al., “Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A,” Journal of Applied Physics, vol. 132, no. 18, Art. no. 185701, 2022, doi: 10.1063/5.0121559.' mla: Riedl, Thomas, et al. “Selective Area Heteroepitaxy of InAs Nanostructures on Nanopillar-Patterned GaAs(111)A.” Journal of Applied Physics, vol. 132, no. 18, 185701, AIP Publishing, 2022, doi:10.1063/5.0121559. short: T. Riedl, V.S. Kunnathully, A.K. Verma, T. Langer, D. Reuter, B. Büker, A. Hütten, J. Lindner, Journal of Applied Physics 132 (2022). date_created: 2022-11-10T14:19:21Z date_updated: 2023-01-10T12:08:26Z department: - _id: '15' - _id: '230' doi: 10.1063/5.0121559 intvolume: ' 132' issue: '18' keyword: - General Physics and Astronomy language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A type: journal_article user_id: '77496' volume: 132 year: '2022' ... --- _id: '47984' abstract: - lang: eng text: Recent analyses by polarization resolved second-harmonic (SH) microscopy have demonstrated that ferroelectric (FE) domain walls (DWs) can possess non-Ising wall characteristics and topological nature. These analyses rely on locally analyzing the properties, directionality, and magnitude of the second-order nonlinear tensor. However, when inspecting FE DWs with SH microscopy, a manifold of different effects may contribute to the observed signal difference between domains and DWs, i.e., far-field interference, Čerenkov-type phase-matching (CSHG), and changes in the aforementioned local nonlinear optical properties. They all might be present at the same time and, therefore, require careful interpretation and separation. In this work, we demonstrate how the particularly strong Čerenkov-type contrast can selectively be blocked using dark- and bright-field SH microscopy. Based on this approach, we show that other contrast mechanisms emerge that were previously overlayed by CSHG but can now be readily selected through the appropriate experimental geometry. Using the methods presented, we show that the strength of the CSHG contrast compared to the other mechanisms is approximately 22 times higher. This work lays the foundation for the in-depth analysis of FE DW topologies by SH microscopy. article_type: original author: - first_name: Peter A. full_name: Hegarty, Peter A. last_name: Hegarty - first_name: Henrik full_name: Beccard, Henrik last_name: Beccard - first_name: Lukas M. full_name: Eng, Lukas M. last_name: Eng - first_name: Michael full_name: Rüsing, Michael id: '22501' last_name: Rüsing orcid: 0000-0003-4682-4577 citation: ama: 'Hegarty PA, Beccard H, Eng LM, Rüsing M. Turn all the lights off: Bright- and dark-field second-harmonic microscopy to select contrast mechanisms for ferroelectric domain walls. Journal of Applied Physics. 2022;131(24). doi:10.1063/5.0094988' apa: 'Hegarty, P. A., Beccard, H., Eng, L. M., & Rüsing, M. (2022). Turn all the lights off: Bright- and dark-field second-harmonic microscopy to select contrast mechanisms for ferroelectric domain walls. Journal of Applied Physics, 131(24). https://doi.org/10.1063/5.0094988' bibtex: '@article{Hegarty_Beccard_Eng_Rüsing_2022, title={Turn all the lights off: Bright- and dark-field second-harmonic microscopy to select contrast mechanisms for ferroelectric domain walls}, volume={131}, DOI={10.1063/5.0094988}, number={24}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Hegarty, Peter A. and Beccard, Henrik and Eng, Lukas M. and Rüsing, Michael}, year={2022} }' chicago: 'Hegarty, Peter A., Henrik Beccard, Lukas M. Eng, and Michael Rüsing. “Turn All the Lights off: Bright- and Dark-Field Second-Harmonic Microscopy to Select Contrast Mechanisms for Ferroelectric Domain Walls.” Journal of Applied Physics 131, no. 24 (2022). https://doi.org/10.1063/5.0094988.' ieee: 'P. A. Hegarty, H. Beccard, L. M. Eng, and M. Rüsing, “Turn all the lights off: Bright- and dark-field second-harmonic microscopy to select contrast mechanisms for ferroelectric domain walls,” Journal of Applied Physics, vol. 131, no. 24, 2022, doi: 10.1063/5.0094988.' mla: 'Hegarty, Peter A., et al. “Turn All the Lights off: Bright- and Dark-Field Second-Harmonic Microscopy to Select Contrast Mechanisms for Ferroelectric Domain Walls.” Journal of Applied Physics, vol. 131, no. 24, AIP Publishing, 2022, doi:10.1063/5.0094988.' short: P.A. Hegarty, H. Beccard, L.M. Eng, M. Rüsing, Journal of Applied Physics 131 (2022). date_created: 2023-10-11T08:53:25Z date_updated: 2023-10-11T08:53:55Z doi: 10.1063/5.0094988 extern: '1' funded_apc: '1' intvolume: ' 131' issue: '24' keyword: - General Physics and Astronomy language: - iso: eng main_file_link: - open_access: '1' url: ' https://doi.org/10.1063/5.0094988' oa: '1' publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing quality_controlled: '1' status: public title: 'Turn all the lights off: Bright- and dark-field second-harmonic microscopy to select contrast mechanisms for ferroelectric domain walls' type: journal_article user_id: '22501' volume: 131 year: '2022' ... --- _id: '47989' abstract: - lang: eng text: Thin-film materials from μm thickness down to single-atomic-layered 2D materials play a central role in many novel electronic and optical applications. Coherent, nonlinear optical (NLO) μ-spectroscopy offers insight into the local thickness, stacking order, symmetry, or electronic and vibrational properties. Thin films and 2D materials are usually supported on multi-layered substrates leading to (multi-)reflections, interference, or phase jumps at interfaces during μ-spectroscopy, which all can make the interpretation of experiments particularly challenging. The disentanglement of the influence parameters can be achieved via rigorous theoretical analysis. In this work, we compare two self-developed modeling approaches, a semi-analytical and a fully vectorial model, to experiments carried out in thin-film geometry for two archetypal NLO processes, second-harmonic and third-harmonic generation. In particular, we demonstrate that thin-film interference and phase matching do heavily influence the signal strength. Furthermore, we work out key differences between three and four photon processes, such as the role of the Gouy-phase shift and the focal position. Last, we can show that a relatively simple semi-analytical model, despite its limitations, is able to accurately describe experiments at a significantly lower computational cost as compared to a full vectorial modeling. This study lays the groundwork for performing quantitative NLO μ-spectroscopy on thin films and 2D materials, as it identifies and quantifies the impact of the corresponding sample and setup parameters on the NLO signal, in order to distinguish them from genuine material properties.< article_number: '213102' article_type: original author: - first_name: Zeeshan H. full_name: Amber, Zeeshan H. last_name: Amber - first_name: Kai J. full_name: Spychala, Kai J. last_name: Spychala - first_name: Lukas M. full_name: Eng, Lukas M. last_name: Eng - first_name: Michael full_name: Rüsing, Michael id: '22501' last_name: Rüsing orcid: 0000-0003-4682-4577 citation: ama: Amber ZH, Spychala KJ, Eng LM, Rüsing M. Nonlinear optical interactions in focused beams and nanosized structures. Journal of Applied Physics. 2022;132(21). doi:10.1063/5.0125926 apa: Amber, Z. H., Spychala, K. J., Eng, L. M., & Rüsing, M. (2022). Nonlinear optical interactions in focused beams and nanosized structures. Journal of Applied Physics, 132(21), Article 213102. https://doi.org/10.1063/5.0125926 bibtex: '@article{Amber_Spychala_Eng_Rüsing_2022, title={Nonlinear optical interactions in focused beams and nanosized structures}, volume={132}, DOI={10.1063/5.0125926}, number={21213102}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Amber, Zeeshan H. and Spychala, Kai J. and Eng, Lukas M. and Rüsing, Michael}, year={2022} }' chicago: Amber, Zeeshan H., Kai J. Spychala, Lukas M. Eng, and Michael Rüsing. “Nonlinear Optical Interactions in Focused Beams and Nanosized Structures.” Journal of Applied Physics 132, no. 21 (2022). https://doi.org/10.1063/5.0125926. ieee: 'Z. H. Amber, K. J. Spychala, L. M. Eng, and M. Rüsing, “Nonlinear optical interactions in focused beams and nanosized structures,” Journal of Applied Physics, vol. 132, no. 21, Art. no. 213102, 2022, doi: 10.1063/5.0125926.' mla: Amber, Zeeshan H., et al. “Nonlinear Optical Interactions in Focused Beams and Nanosized Structures.” Journal of Applied Physics, vol. 132, no. 21, 213102, AIP Publishing, 2022, doi:10.1063/5.0125926. short: Z.H. Amber, K.J. Spychala, L.M. Eng, M. Rüsing, Journal of Applied Physics 132 (2022). date_created: 2023-10-11T08:59:23Z date_updated: 2023-10-11T09:01:37Z doi: 10.1063/5.0125926 funded_apc: '1' intvolume: ' 132' issue: '21' keyword: - General Physics and Astronomy language: - iso: eng main_file_link: - open_access: '1' url: ' https://doi.org/10.1063/5.0125926' oa: '1' publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing quality_controlled: '1' status: public title: Nonlinear optical interactions in focused beams and nanosized structures type: journal_article user_id: '22501' volume: 132 year: '2022' ... --- _id: '47988' abstract: - lang: eng text: Second harmonic (SH) microscopy represents a powerful tool for the investigation of crystalline systems, such as ferroelectrics and their domain walls (DWs). Under the condition of normal dispersion, i.e., the refractive index at the SH wavelength is larger as compared to the refractive index at the fundamental wavelength, n(2ω)>n(ω), bulk crystals will generate no SH signal. Should the bulk, however, contain DWs, an appreciable SH signal will still be detectable at the location of DWs stemming from the Čerenkov mechanism. In this work, we demonstrate both how SH signals are generated in bulk media and how the Čerenkov mechanism can be inhibited by using anomalous dispersion, i.e., n(ω)Journal of Applied Physics. 2022;132(21):214102. doi:10.1063/5.0115673 apa: Hegarty, P. A., Eng, L. M., & Rüsing, M. (2022). Tuning the Čerenkov second harmonic contrast from ferroelectric domain walls via anomalous dispersion. Journal of Applied Physics, 132(21), 214102. https://doi.org/10.1063/5.0115673 bibtex: '@article{Hegarty_Eng_Rüsing_2022, title={Tuning the Čerenkov second harmonic contrast from ferroelectric domain walls via anomalous dispersion}, volume={132}, DOI={10.1063/5.0115673}, number={21}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Hegarty, Peter A. and Eng, Lukas M. and Rüsing, Michael}, year={2022}, pages={214102} }' chicago: 'Hegarty, Peter A., Lukas M. Eng, and Michael Rüsing. “Tuning the Čerenkov Second Harmonic Contrast from Ferroelectric Domain Walls via Anomalous Dispersion.” Journal of Applied Physics 132, no. 21 (2022): 214102. https://doi.org/10.1063/5.0115673.' ieee: 'P. A. Hegarty, L. M. Eng, and M. Rüsing, “Tuning the Čerenkov second harmonic contrast from ferroelectric domain walls via anomalous dispersion,” Journal of Applied Physics, vol. 132, no. 21, p. 214102, 2022, doi: 10.1063/5.0115673.' mla: Hegarty, Peter A., et al. “Tuning the Čerenkov Second Harmonic Contrast from Ferroelectric Domain Walls via Anomalous Dispersion.” Journal of Applied Physics, vol. 132, no. 21, AIP Publishing, 2022, p. 214102, doi:10.1063/5.0115673. short: P.A. Hegarty, L.M. Eng, M. Rüsing, Journal of Applied Physics 132 (2022) 214102. date_created: 2023-10-11T08:57:55Z date_updated: 2023-10-11T08:58:50Z doi: 10.1063/5.0115673 extern: '1' funded_apc: '1' intvolume: ' 132' issue: '21' keyword: - General Physics and Astronomy language: - iso: eng main_file_link: - open_access: '1' url: ' https://doi.org/10.1063/5.0115673' oa: '1' page: '214102' publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing quality_controlled: '1' status: public title: Tuning the Čerenkov second harmonic contrast from ferroelectric domain walls via anomalous dispersion type: journal_article user_id: '22501' volume: 132 year: '2022' ... --- _id: '46011' article_number: '014102' author: - first_name: Dawei full_name: Zhang, Dawei last_name: Zhang - first_name: Daniel full_name: Sando, Daniel last_name: Sando - first_name: Ying full_name: Pan, Ying id: '100383' last_name: Pan - first_name: Pankaj full_name: Sharma, Pankaj last_name: Sharma - first_name: Jan full_name: Seidel, Jan last_name: Seidel citation: ama: Zhang D, Sando D, Pan Y, Sharma P, Seidel J. Robust ferroelectric polarization retention in harsh environments through engineered domain wall pinning. Journal of Applied Physics. 2021;129(1). doi:10.1063/5.0029620 apa: Zhang, D., Sando, D., Pan, Y., Sharma, P., & Seidel, J. (2021). Robust ferroelectric polarization retention in harsh environments through engineered domain wall pinning. Journal of Applied Physics, 129(1), Article 014102. https://doi.org/10.1063/5.0029620 bibtex: '@article{Zhang_Sando_Pan_Sharma_Seidel_2021, title={Robust ferroelectric polarization retention in harsh environments through engineered domain wall pinning}, volume={129}, DOI={10.1063/5.0029620}, number={1014102}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zhang, Dawei and Sando, Daniel and Pan, Ying and Sharma, Pankaj and Seidel, Jan}, year={2021} }' chicago: Zhang, Dawei, Daniel Sando, Ying Pan, Pankaj Sharma, and Jan Seidel. “Robust Ferroelectric Polarization Retention in Harsh Environments through Engineered Domain Wall Pinning.” Journal of Applied Physics 129, no. 1 (2021). https://doi.org/10.1063/5.0029620. ieee: 'D. Zhang, D. Sando, Y. Pan, P. Sharma, and J. Seidel, “Robust ferroelectric polarization retention in harsh environments through engineered domain wall pinning,” Journal of Applied Physics, vol. 129, no. 1, Art. no. 014102, 2021, doi: 10.1063/5.0029620.' mla: Zhang, Dawei, et al. “Robust Ferroelectric Polarization Retention in Harsh Environments through Engineered Domain Wall Pinning.” Journal of Applied Physics, vol. 129, no. 1, 014102, AIP Publishing, 2021, doi:10.1063/5.0029620. short: D. Zhang, D. Sando, Y. Pan, P. Sharma, J. Seidel, Journal of Applied Physics 129 (2021). date_created: 2023-07-11T14:50:35Z date_updated: 2023-07-11T16:39:06Z doi: 10.1063/5.0029620 extern: '1' intvolume: ' 129' issue: '1' keyword: - General Physics and Astronomy language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Robust ferroelectric polarization retention in harsh environments through engineered domain wall pinning type: journal_article user_id: '100383' volume: 129 year: '2021' ... --- _id: '47973' abstract: - lang: eng text: Thin-film lithium niobate (TFLN) in the form of x- or z-cut lithium-niobate-on-insulator has attracted considerable interest as a very promising and novel platform for developing integrated optoelectronic (nano)devices and exploring fundamental research. Here, we investigate the coherent interaction length lc of optical second-harmonic generation (SHG) microscopy in such samples, that are purposely prepared into a wedge shape, in order to elegantly tune the geometrical confinement from bulk thicknesses down to approximately 50 nm. SHG microscopy is a very powerful and non-invasive tool for the investigation of structural properties in the biological and solid-state sciences, especially for visualizing and analyzing ferroelectric domains and domain walls. However, unlike in bulk lithium niobate (LN), SHG microscopy in TFLN is impacted by interfacial reflections and resonant enhancement, both of which rely on film thickness and substrate material. In this paper, we show that the dominant SHG contribution measured on TFLN in backreflection is the co-propagating phase-matched SHG signal and not the counter-propagating SHG portion as is the case for bulk LN samples. Moreover, lc depends on the incident pump laser wavelength (sample dispersion) but also on the numerical aperture of the focussing objective in use. These experimental findings on x- and z-cut TFLN are excellently backed up by our advanced numerical simulations. article_type: original author: - first_name: Zeeshan H. full_name: Amber, Zeeshan H. last_name: Amber - first_name: Benjamin full_name: Kirbus, Benjamin last_name: Kirbus - first_name: Lukas M. full_name: Eng, Lukas M. last_name: Eng - first_name: Michael full_name: Rüsing, Michael id: '22501' last_name: Rüsing orcid: 0000-0003-4682-4577 citation: ama: Amber ZH, Kirbus B, Eng LM, Rüsing M. Quantifying the coherent interaction length of second-harmonic microscopy in lithium niobate confined nanostructures. Journal of Applied Physics. 2021;130(13):133102. doi:10.1063/5.0058996 apa: Amber, Z. H., Kirbus, B., Eng, L. M., & Rüsing, M. (2021). Quantifying the coherent interaction length of second-harmonic microscopy in lithium niobate confined nanostructures. Journal of Applied Physics, 130(13), 133102. https://doi.org/10.1063/5.0058996 bibtex: '@article{Amber_Kirbus_Eng_Rüsing_2021, title={Quantifying the coherent interaction length of second-harmonic microscopy in lithium niobate confined nanostructures}, volume={130}, DOI={10.1063/5.0058996}, number={13}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Amber, Zeeshan H. and Kirbus, Benjamin and Eng, Lukas M. and Rüsing, Michael}, year={2021}, pages={133102} }' chicago: 'Amber, Zeeshan H., Benjamin Kirbus, Lukas M. Eng, and Michael Rüsing. “Quantifying the Coherent Interaction Length of Second-Harmonic Microscopy in Lithium Niobate Confined Nanostructures.” Journal of Applied Physics 130, no. 13 (2021): 133102. https://doi.org/10.1063/5.0058996.' ieee: 'Z. H. Amber, B. Kirbus, L. M. Eng, and M. Rüsing, “Quantifying the coherent interaction length of second-harmonic microscopy in lithium niobate confined nanostructures,” Journal of Applied Physics, vol. 130, no. 13, p. 133102, 2021, doi: 10.1063/5.0058996.' mla: Amber, Zeeshan H., et al. “Quantifying the Coherent Interaction Length of Second-Harmonic Microscopy in Lithium Niobate Confined Nanostructures.” Journal of Applied Physics, vol. 130, no. 13, AIP Publishing, 2021, p. 133102, doi:10.1063/5.0058996. short: Z.H. Amber, B. Kirbus, L.M. Eng, M. Rüsing, Journal of Applied Physics 130 (2021) 133102. date_created: 2023-10-11T08:29:03Z date_updated: 2023-10-11T08:29:44Z doi: 10.1063/5.0058996 extern: '1' intvolume: ' 130' issue: '13' keyword: - General Physics and Astronomy language: - iso: eng page: '133102' publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing quality_controlled: '1' status: public title: Quantifying the coherent interaction length of second-harmonic microscopy in lithium niobate confined nanostructures type: journal_article user_id: '22501' volume: 130 year: '2021' ... --- _id: '20644' abstract: - lang: eng text: Plasmonic nanoantennas for visible and infrared radiation strongly improve the interaction of light with the matter on the nanoscale due to their strong near-field enhancement. In this study, we investigate a double-resonant plasmonic nanoantenna, which makes use of plasmonic field enhancement, enhanced outcoupling of second harmonic light, and resonant lattice effects. Using this design, we demonstrate how the efficiency of second harmonic generation can be increased significantly by fully embedding the nanoantennas into nonlinear dielectric material ZnO, instead of placing them on the surface. Investigating two different processes, we found that the best fabrication route is embedding the gold nanoantennas in ZnO using an MBE overgrowth process where a thin ZnO layer was deposited on nanoantennas fabricated on a ZnO substrate. In addition, second harmonic generation measurements show that the embedding leads to an enhancement compared to the emission of nanoantennas placed on the ZnO substrate surface. These promising results facilitate further research to determine the influence of the periodicity of the nanoantenna arrangement of the resulting SHG signal. article_number: '043107' article_type: original author: - first_name: Ruth full_name: Volmert, Ruth last_name: Volmert - first_name: Nils full_name: Weber, Nils last_name: Weber - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 citation: ama: Volmert R, Weber N, Meier C. Nanoantennas embedded in zinc oxide for second harmonic generation enhancement. Journal of Applied Physics. 2020;128(4). doi:10.1063/5.0012813 apa: Volmert, R., Weber, N., & Meier, C. (2020). Nanoantennas embedded in zinc oxide for second harmonic generation enhancement. Journal of Applied Physics, 128(4). https://doi.org/10.1063/5.0012813 bibtex: '@article{Volmert_Weber_Meier_2020, title={Nanoantennas embedded in zinc oxide for second harmonic generation enhancement}, volume={128}, DOI={10.1063/5.0012813}, number={4043107}, journal={Journal of Applied Physics}, author={Volmert, Ruth and Weber, Nils and Meier, Cedrik}, year={2020} }' chicago: Volmert, Ruth, Nils Weber, and Cedrik Meier. “Nanoantennas Embedded in Zinc Oxide for Second Harmonic Generation Enhancement.” Journal of Applied Physics 128, no. 4 (2020). https://doi.org/10.1063/5.0012813. ieee: R. Volmert, N. Weber, and C. Meier, “Nanoantennas embedded in zinc oxide for second harmonic generation enhancement,” Journal of Applied Physics, vol. 128, no. 4, 2020. mla: Volmert, Ruth, et al. “Nanoantennas Embedded in Zinc Oxide for Second Harmonic Generation Enhancement.” Journal of Applied Physics, vol. 128, no. 4, 043107, 2020, doi:10.1063/5.0012813. short: R. Volmert, N. Weber, C. Meier, Journal of Applied Physics 128 (2020). date_created: 2020-12-02T12:57:58Z date_updated: 2022-01-06T06:54:31Z department: - _id: '230' - _id: '429' doi: 10.1063/5.0012813 external_id: isi: - '000557311900001' intvolume: ' 128' isi: '1' issue: '4' language: - iso: eng project: - _id: '53' name: TRR 142 - _id: '55' name: TRR 142 - Project Area B - _id: '66' name: TRR 142 - Subproject B1 - _id: '56' name: TRR 142 - Project Area C - _id: '75' name: TRR 142 - Subproject C5 publication: Journal of Applied Physics publication_identifier: eissn: - 1089-7550 issn: - 0021-8979 publication_status: published quality_controlled: '1' status: public title: Nanoantennas embedded in zinc oxide for second harmonic generation enhancement type: journal_article user_id: '20798' volume: 128 year: '2020' ... --- _id: '22053' article_number: '023103' author: - first_name: K. J. full_name: Spychala, K. J. last_name: Spychala - first_name: P. full_name: Mackwitz, P. last_name: Mackwitz - first_name: A. full_name: Widhalm, A. last_name: Widhalm - first_name: G. full_name: Berth, G. last_name: Berth - first_name: A. full_name: Zrenner, A. last_name: Zrenner citation: ama: Spychala KJ, Mackwitz P, Widhalm A, Berth G, Zrenner A. Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials in the tight focusing regime. Journal of Applied Physics. 2020. doi:10.1063/1.5133476 apa: Spychala, K. J., Mackwitz, P., Widhalm, A., Berth, G., & Zrenner, A. (2020). Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials in the tight focusing regime. Journal of Applied Physics. https://doi.org/10.1063/1.5133476 bibtex: '@article{Spychala_Mackwitz_Widhalm_Berth_Zrenner_2020, title={Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials in the tight focusing regime}, DOI={10.1063/1.5133476}, number={023103}, journal={Journal of Applied Physics}, author={Spychala, K. J. and Mackwitz, P. and Widhalm, A. and Berth, G. and Zrenner, A.}, year={2020} }' chicago: Spychala, K. J., P. Mackwitz, A. Widhalm, G. Berth, and A. Zrenner. “Spatially Resolved Light Field Analysis of the Second-Harmonic Signal of χ(2)-Materials in the Tight Focusing Regime.” Journal of Applied Physics, 2020. https://doi.org/10.1063/1.5133476. ieee: K. J. Spychala, P. Mackwitz, A. Widhalm, G. Berth, and A. Zrenner, “Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials in the tight focusing regime,” Journal of Applied Physics, 2020. mla: Spychala, K. J., et al. “Spatially Resolved Light Field Analysis of the Second-Harmonic Signal of χ(2)-Materials in the Tight Focusing Regime.” Journal of Applied Physics, 023103, 2020, doi:10.1063/1.5133476. short: K.J. Spychala, P. Mackwitz, A. Widhalm, G. Berth, A. Zrenner, Journal of Applied Physics (2020). date_created: 2021-05-09T06:25:14Z date_updated: 2022-01-06T06:55:23Z department: - _id: '15' - _id: '230' doi: 10.1063/1.5133476 language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials in the tight focusing regime type: journal_article user_id: '606' year: '2020' ... --- _id: '22054' article_number: '023103' author: - first_name: K. J. full_name: Spychala, K. J. last_name: Spychala - first_name: P. full_name: Mackwitz, P. last_name: Mackwitz - first_name: A. full_name: Widhalm, A. last_name: Widhalm - first_name: Gerhard full_name: Berth, Gerhard last_name: Berth - first_name: Artur full_name: Zrenner, Artur id: '606' last_name: Zrenner orcid: 0000-0002-5190-0944 citation: ama: Spychala KJ, Mackwitz P, Widhalm A, Berth G, Zrenner A. Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials in the tight focusing regime. Journal of Applied Physics. 2020. doi:10.1063/1.5133476 apa: Spychala, K. J., Mackwitz, P., Widhalm, A., Berth, G., & Zrenner, A. (2020). Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials in the tight focusing regime. Journal of Applied Physics. https://doi.org/10.1063/1.5133476 bibtex: '@article{Spychala_Mackwitz_Widhalm_Berth_Zrenner_2020, title={Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials in the tight focusing regime}, DOI={10.1063/1.5133476}, number={023103}, journal={Journal of Applied Physics}, author={Spychala, K. J. and Mackwitz, P. and Widhalm, A. and Berth, Gerhard and Zrenner, Artur}, year={2020} }' chicago: Spychala, K. J., P. Mackwitz, A. Widhalm, Gerhard Berth, and Artur Zrenner. “Spatially Resolved Light Field Analysis of the Second-Harmonic Signal of χ(2)-Materials in the Tight Focusing Regime.” Journal of Applied Physics, 2020. https://doi.org/10.1063/1.5133476. ieee: K. J. Spychala, P. Mackwitz, A. Widhalm, G. Berth, and A. Zrenner, “Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials in the tight focusing regime,” Journal of Applied Physics, 2020. mla: Spychala, K. J., et al. “Spatially Resolved Light Field Analysis of the Second-Harmonic Signal of χ(2)-Materials in the Tight Focusing Regime.” Journal of Applied Physics, 023103, 2020, doi:10.1063/1.5133476. short: K.J. Spychala, P. Mackwitz, A. Widhalm, G. Berth, A. Zrenner, Journal of Applied Physics (2020). date_created: 2021-05-09T06:27:56Z date_updated: 2022-01-06T06:55:23Z department: - _id: '15' - _id: '230' doi: 10.1063/1.5133476 language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: Spatially resolved light field analysis of the second-harmonic signal of χ(2)-materials in the tight focusing regime type: journal_article user_id: '606' year: '2020' ... --- _id: '22056' article_number: '234102' author: - first_name: K. J. full_name: Spychala, K. J. last_name: Spychala - first_name: P. full_name: Mackwitz, P. last_name: Mackwitz - first_name: Michael full_name: Rüsing, Michael id: '22501' last_name: Rüsing orcid: 0000-0003-4682-4577 - first_name: A. full_name: Widhalm, A. last_name: Widhalm - first_name: Gerhard full_name: Berth, Gerhard id: '53' last_name: Berth - first_name: Christine full_name: Silberhorn, Christine id: '26263' last_name: Silberhorn - first_name: Artur full_name: Zrenner, Artur id: '606' last_name: Zrenner orcid: 0000-0002-5190-0944 citation: ama: 'Spychala KJ, Mackwitz P, Rüsing M, et al. Nonlinear focal mapping of ferroelectric domain walls in LiNbO3: Analysis of the SHG microscopy contrast mechanism. Journal of Applied Physics. Published online 2020. doi:10.1063/5.0025284' apa: 'Spychala, K. J., Mackwitz, P., Rüsing, M., Widhalm, A., Berth, G., Silberhorn, C., & Zrenner, A. (2020). Nonlinear focal mapping of ferroelectric domain walls in LiNbO3: Analysis of the SHG microscopy contrast mechanism. Journal of Applied Physics, Article 234102. https://doi.org/10.1063/5.0025284' bibtex: '@article{Spychala_Mackwitz_Rüsing_Widhalm_Berth_Silberhorn_Zrenner_2020, title={Nonlinear focal mapping of ferroelectric domain walls in LiNbO3: Analysis of the SHG microscopy contrast mechanism}, DOI={10.1063/5.0025284}, number={234102}, journal={Journal of Applied Physics}, author={Spychala, K. J. and Mackwitz, P. and Rüsing, Michael and Widhalm, A. and Berth, Gerhard and Silberhorn, Christine and Zrenner, Artur}, year={2020} }' chicago: 'Spychala, K. J., P. Mackwitz, Michael Rüsing, A. Widhalm, Gerhard Berth, Christine Silberhorn, and Artur Zrenner. “Nonlinear Focal Mapping of Ferroelectric Domain Walls in LiNbO3: Analysis of the SHG Microscopy Contrast Mechanism.” Journal of Applied Physics, 2020. https://doi.org/10.1063/5.0025284.' ieee: 'K. J. Spychala et al., “Nonlinear focal mapping of ferroelectric domain walls in LiNbO3: Analysis of the SHG microscopy contrast mechanism,” Journal of Applied Physics, Art. no. 234102, 2020, doi: 10.1063/5.0025284.' mla: 'Spychala, K. J., et al. “Nonlinear Focal Mapping of Ferroelectric Domain Walls in LiNbO3: Analysis of the SHG Microscopy Contrast Mechanism.” Journal of Applied Physics, 234102, 2020, doi:10.1063/5.0025284.' short: K.J. Spychala, P. Mackwitz, M. Rüsing, A. Widhalm, G. Berth, C. Silberhorn, A. Zrenner, Journal of Applied Physics (2020). date_created: 2021-05-09T06:33:08Z date_updated: 2023-10-09T08:07:57Z department: - _id: '15' - _id: '230' doi: 10.1063/5.0025284 language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: 'Nonlinear focal mapping of ferroelectric domain walls in LiNbO3: Analysis of the SHG microscopy contrast mechanism' type: journal_article user_id: '14931' year: '2020' ... --- _id: '47955' abstract: - lang: eng text: Quasi-phase-matched grating structures in lithium niobate waveguides with sub-micrometer periodicities will benefit the development of short-wavelength nonlinear optical devices. Here, we report on the reproducible formation of periodically poled domains in x-cut single-crystalline thin-film lithium niobate with periodicities as short as 600 nm. Shaped single-voltage poling pulses were applied to electrode structures that were fabricated by a combination of electron-beam and direct-writing laser lithography. Evidence of successful poling with good quality was obtained through second-harmonic microscopy and piezoresponse force microscopy imaging. For the sub-micrometer period structures, we observed patterns with a double periodicity formed by domain interactions and features with sizes <200 nm. article_number: '193104' article_type: original author: - first_name: Jie full_name: Zhao, Jie last_name: Zhao - first_name: Michael full_name: Rüsing, Michael id: '22501' last_name: Rüsing orcid: 0000-0003-4682-4577 - first_name: Matthias full_name: Roeper, Matthias last_name: Roeper - first_name: Lukas M. full_name: Eng, Lukas M. last_name: Eng - first_name: Shayan full_name: Mookherjea, Shayan last_name: Mookherjea citation: ama: Zhao J, Rüsing M, Roeper M, Eng LM, Mookherjea S. Poling thin-film x-cut lithium niobate for quasi-phase matching with sub-micrometer periodicity. Journal of Applied Physics. 2020;127(19). doi:10.1063/1.5143266 apa: Zhao, J., Rüsing, M., Roeper, M., Eng, L. M., & Mookherjea, S. (2020). Poling thin-film x-cut lithium niobate for quasi-phase matching with sub-micrometer periodicity. Journal of Applied Physics, 127(19), Article 193104. https://doi.org/10.1063/1.5143266 bibtex: '@article{Zhao_Rüsing_Roeper_Eng_Mookherjea_2020, title={Poling thin-film x-cut lithium niobate for quasi-phase matching with sub-micrometer periodicity}, volume={127}, DOI={10.1063/1.5143266}, number={19193104}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zhao, Jie and Rüsing, Michael and Roeper, Matthias and Eng, Lukas M. and Mookherjea, Shayan}, year={2020} }' chicago: Zhao, Jie, Michael Rüsing, Matthias Roeper, Lukas M. Eng, and Shayan Mookherjea. “Poling Thin-Film x-Cut Lithium Niobate for Quasi-Phase Matching with Sub-Micrometer Periodicity.” Journal of Applied Physics 127, no. 19 (2020). https://doi.org/10.1063/1.5143266. ieee: 'J. Zhao, M. Rüsing, M. Roeper, L. M. Eng, and S. Mookherjea, “Poling thin-film x-cut lithium niobate for quasi-phase matching with sub-micrometer periodicity,” Journal of Applied Physics, vol. 127, no. 19, Art. no. 193104, 2020, doi: 10.1063/1.5143266.' mla: Zhao, Jie, et al. “Poling Thin-Film x-Cut Lithium Niobate for Quasi-Phase Matching with Sub-Micrometer Periodicity.” Journal of Applied Physics, vol. 127, no. 19, 193104, AIP Publishing, 2020, doi:10.1063/1.5143266. short: J. Zhao, M. Rüsing, M. Roeper, L.M. Eng, S. Mookherjea, Journal of Applied Physics 127 (2020). date_created: 2023-10-11T08:06:39Z date_updated: 2023-10-11T08:07:28Z doi: 10.1063/1.5143266 intvolume: ' 127' issue: '19' keyword: - General Physics and Astronomy language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Poling thin-film x-cut lithium niobate for quasi-phase matching with sub-micrometer periodicity type: journal_article user_id: '22501' volume: 127 year: '2020' ... --- _id: '8646' article_number: '095703' author: - first_name: M. full_name: Deppe, M. last_name: Deppe - first_name: J. W. full_name: Gerlach, J. W. last_name: Gerlach - first_name: S. full_name: Shvarkov, S. last_name: Shvarkov - first_name: D. full_name: Rogalla, D. last_name: Rogalla - first_name: H.-W. full_name: Becker, H.-W. last_name: Becker - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 citation: ama: Deppe M, Gerlach JW, Shvarkov S, et al. Germanium doping of cubic GaN grown by molecular beam epitaxy. Journal of Applied Physics. 2019. doi:10.1063/1.5066095 apa: Deppe, M., Gerlach, J. W., Shvarkov, S., Rogalla, D., Becker, H.-W., Reuter, D., & As, D. J. (2019). Germanium doping of cubic GaN grown by molecular beam epitaxy. Journal of Applied Physics. https://doi.org/10.1063/1.5066095 bibtex: '@article{Deppe_Gerlach_Shvarkov_Rogalla_Becker_Reuter_As_2019, title={Germanium doping of cubic GaN grown by molecular beam epitaxy}, DOI={10.1063/1.5066095}, number={095703}, journal={Journal of Applied Physics}, author={Deppe, M. and Gerlach, J. W. and Shvarkov, S. and Rogalla, D. and Becker, H.-W. and Reuter, Dirk and As, Donat Josef}, year={2019} }' chicago: Deppe, M., J. W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, Dirk Reuter, and Donat Josef As. “Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy.” Journal of Applied Physics, 2019. https://doi.org/10.1063/1.5066095. ieee: M. Deppe et al., “Germanium doping of cubic GaN grown by molecular beam epitaxy,” Journal of Applied Physics, 2019. mla: Deppe, M., et al. “Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy.” Journal of Applied Physics, 095703, 2019, doi:10.1063/1.5066095. short: M. Deppe, J.W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, D. Reuter, D.J. As, Journal of Applied Physics (2019). date_created: 2019-03-26T12:48:57Z date_updated: 2022-01-06T07:03:58Z department: - _id: '230' - _id: '429' doi: 10.1063/1.5066095 language: - iso: eng project: - _id: '67' name: TRR 142 - Subproject B2 publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: Germanium doping of cubic GaN grown by molecular beam epitaxy type: journal_article user_id: '14' year: '2019' ... --- _id: '9698' article_number: '073103' author: - first_name: C. full_name: Golla, C. last_name: Golla - first_name: N. full_name: Weber, N. last_name: Weber - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 citation: ama: Golla C, Weber N, Meier C. Zinc oxide based dielectric nanoantennas for efficient nonlinear frequency conversion. Journal of Applied Physics. 2019;125(7). doi:10.1063/1.5082720 apa: Golla, C., Weber, N., & Meier, C. (2019). Zinc oxide based dielectric nanoantennas for efficient nonlinear frequency conversion. Journal of Applied Physics, 125(7). https://doi.org/10.1063/1.5082720 bibtex: '@article{Golla_Weber_Meier_2019, title={Zinc oxide based dielectric nanoantennas for efficient nonlinear frequency conversion}, volume={125}, DOI={10.1063/1.5082720}, number={7073103}, journal={Journal of Applied Physics}, author={Golla, C. and Weber, N. and Meier, Cedrik}, year={2019} }' chicago: Golla, C., N. Weber, and Cedrik Meier. “Zinc Oxide Based Dielectric Nanoantennas for Efficient Nonlinear Frequency Conversion.” Journal of Applied Physics 125, no. 7 (2019). https://doi.org/10.1063/1.5082720. ieee: C. Golla, N. Weber, and C. Meier, “Zinc oxide based dielectric nanoantennas for efficient nonlinear frequency conversion,” Journal of Applied Physics, vol. 125, no. 7, 2019. mla: Golla, C., et al. “Zinc Oxide Based Dielectric Nanoantennas for Efficient Nonlinear Frequency Conversion.” Journal of Applied Physics, vol. 125, no. 7, 073103, 2019, doi:10.1063/1.5082720. short: C. Golla, N. Weber, C. Meier, Journal of Applied Physics 125 (2019). date_created: 2019-05-08T07:06:11Z date_updated: 2022-01-06T07:04:18Z department: - _id: '15' - _id: '35' - _id: '287' - _id: '230' doi: 10.1063/1.5082720 intvolume: ' 125' issue: '7' language: - iso: eng project: - _id: '53' name: TRR 142 - _id: '55' name: TRR 142 - Project Area B - _id: '66' name: TRR 142 - Subproject B1 - _id: '56' name: TRR 142 - Project Area C - _id: '75' name: TRR 142 - Subproject C5 publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: Zinc oxide based dielectric nanoantennas for efficient nonlinear frequency conversion type: journal_article user_id: '20798' volume: 125 year: '2019' ... --- _id: '9897' article_number: '193104' author: - first_name: Maximilian full_name: Protte, Maximilian last_name: Protte - first_name: Nils full_name: Weber, Nils last_name: Weber - first_name: Christian full_name: Golla, Christian last_name: Golla - first_name: Thomas full_name: Zentgraf, Thomas id: '30525' last_name: Zentgraf orcid: 0000-0002-8662-1101 - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 citation: ama: Protte M, Weber N, Golla C, Zentgraf T, Meier C. Strong nonlinear optical response from ZnO by coupled and lattice-matched nanoantennas. Journal of Applied Physics. 2019;125. doi:10.1063/1.5093257 apa: Protte, M., Weber, N., Golla, C., Zentgraf, T., & Meier, C. (2019). Strong nonlinear optical response from ZnO by coupled and lattice-matched nanoantennas. Journal of Applied Physics, 125. https://doi.org/10.1063/1.5093257 bibtex: '@article{Protte_Weber_Golla_Zentgraf_Meier_2019, title={Strong nonlinear optical response from ZnO by coupled and lattice-matched nanoantennas}, volume={125}, DOI={10.1063/1.5093257}, number={193104}, journal={Journal of Applied Physics}, author={Protte, Maximilian and Weber, Nils and Golla, Christian and Zentgraf, Thomas and Meier, Cedrik}, year={2019} }' chicago: Protte, Maximilian, Nils Weber, Christian Golla, Thomas Zentgraf, and Cedrik Meier. “Strong Nonlinear Optical Response from ZnO by Coupled and Lattice-Matched Nanoantennas.” Journal of Applied Physics 125 (2019). https://doi.org/10.1063/1.5093257. ieee: M. Protte, N. Weber, C. Golla, T. Zentgraf, and C. Meier, “Strong nonlinear optical response from ZnO by coupled and lattice-matched nanoantennas,” Journal of Applied Physics, vol. 125, 2019. mla: Protte, Maximilian, et al. “Strong Nonlinear Optical Response from ZnO by Coupled and Lattice-Matched Nanoantennas.” Journal of Applied Physics, vol. 125, 193104, 2019, doi:10.1063/1.5093257. short: M. Protte, N. Weber, C. Golla, T. Zentgraf, C. Meier, Journal of Applied Physics 125 (2019). date_created: 2019-05-21T08:35:49Z date_updated: 2020-08-21T13:52:51Z department: - _id: '15' - _id: '287' - _id: '35' - _id: '230' - _id: '289' doi: 10.1063/1.5093257 intvolume: ' 125' language: - iso: eng project: - _id: '53' name: TRR 142 - _id: '55' name: TRR 142 - Project Area B - _id: '66' name: TRR 142 - Subproject B1 - _id: '56' name: TRR 142 - Project Area C - _id: '75' name: TRR 142 - Subproject C5 publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: Strong nonlinear optical response from ZnO by coupled and lattice-matched nanoantennas type: journal_article user_id: '30525' volume: 125 year: '2019' ... --- _id: '13965' article_number: '153901' author: - first_name: J. H. full_name: Buß, J. H. last_name: Buß - first_name: T. full_name: Schupp, T. last_name: Schupp - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 - first_name: D. full_name: Hägele, D. last_name: Hägele - first_name: J. full_name: Rudolph, J. last_name: Rudolph citation: ama: Buß JH, Schupp T, As DJ, Hägele D, Rudolph J. Optical excitation density dependence of spin dynamics in bulk cubic GaN. Journal of Applied Physics. 2019. doi:10.1063/1.5123914 apa: Buß, J. H., Schupp, T., As, D. J., Hägele, D., & Rudolph, J. (2019). Optical excitation density dependence of spin dynamics in bulk cubic GaN. Journal of Applied Physics. https://doi.org/10.1063/1.5123914 bibtex: '@article{Buß_Schupp_As_Hägele_Rudolph_2019, title={Optical excitation density dependence of spin dynamics in bulk cubic GaN}, DOI={10.1063/1.5123914}, number={153901}, journal={Journal of Applied Physics}, author={Buß, J. H. and Schupp, T. and As, Donat Josef and Hägele, D. and Rudolph, J.}, year={2019} }' chicago: Buß, J. H., T. Schupp, Donat Josef As, D. Hägele, and J. Rudolph. “Optical Excitation Density Dependence of Spin Dynamics in Bulk Cubic GaN.” Journal of Applied Physics, 2019. https://doi.org/10.1063/1.5123914. ieee: J. H. Buß, T. Schupp, D. J. As, D. Hägele, and J. Rudolph, “Optical excitation density dependence of spin dynamics in bulk cubic GaN,” Journal of Applied Physics, 2019. mla: Buß, J. H., et al. “Optical Excitation Density Dependence of Spin Dynamics in Bulk Cubic GaN.” Journal of Applied Physics, 153901, 2019, doi:10.1063/1.5123914. short: J.H. Buß, T. Schupp, D.J. As, D. Hägele, J. Rudolph, Journal of Applied Physics (2019). date_created: 2019-10-22T12:26:02Z date_updated: 2022-01-06T06:51:48Z department: - _id: '230' - _id: '429' doi: 10.1063/1.5123914 language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: Optical excitation density dependence of spin dynamics in bulk cubic GaN type: journal_article user_id: '14' year: '2019' ... --- _id: '47951' abstract: - lang: eng text: Thin film lithium niobate has been of great interest recently, and an understanding of periodically poled thin films is crucial for both fundamental physics and device developments. Second-harmonic (SH) microscopy allows for the noninvasive visualization and analysis of ferroelectric domain structures and walls. While the technique is well understood in bulk lithium niobate, SH microscopy in thin films is largely influenced by interfacial reflections and resonant enhancements, which depend on film thicknesses and substrate materials. We present a comprehensive analysis of SH microscopy in x-cut lithium niobate thin films, based on a full three-dimensional focus calculation and accounting for interface reflections. We show that the dominant signal in backreflection originates from a copropagating phase-matched process observed through reflections, rather than direct detection of the counterpropagating signal as in bulk samples. We simulate the SH signatures of domain structures by a simple model of the domain wall as an extensionless transition from a −χ(2) to a +χ(2) region. This allows us to explain the main observation of domain structures in the thin-film geometry, and, in particular, we show that the SH signal from thin poled films allows to unambiguously distinguish areas, which are completely or only partly inverted in depth. article_number: '114105' author: - first_name: Michael full_name: Rüsing, Michael id: '22501' last_name: Rüsing orcid: 0000-0003-4682-4577 - first_name: J. full_name: Zhao, J. last_name: Zhao - first_name: S. full_name: Mookherjea, S. last_name: Mookherjea citation: ama: 'Rüsing M, Zhao J, Mookherjea S. Second harmonic microscopy of poled x-cut thin film lithium niobate: Understanding the contrast mechanism. Journal of Applied Physics. 2019;126(11). doi:10.1063/1.5113727' apa: 'Rüsing, M., Zhao, J., & Mookherjea, S. (2019). Second harmonic microscopy of poled x-cut thin film lithium niobate: Understanding the contrast mechanism. Journal of Applied Physics, 126(11), Article 114105. https://doi.org/10.1063/1.5113727' bibtex: '@article{Rüsing_Zhao_Mookherjea_2019, title={Second harmonic microscopy of poled x-cut thin film lithium niobate: Understanding the contrast mechanism}, volume={126}, DOI={10.1063/1.5113727}, number={11114105}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Rüsing, Michael and Zhao, J. and Mookherjea, S.}, year={2019} }' chicago: 'Rüsing, Michael, J. Zhao, and S. Mookherjea. “Second Harmonic Microscopy of Poled X-Cut Thin Film Lithium Niobate: Understanding the Contrast Mechanism.” Journal of Applied Physics 126, no. 11 (2019). https://doi.org/10.1063/1.5113727.' ieee: 'M. Rüsing, J. Zhao, and S. Mookherjea, “Second harmonic microscopy of poled x-cut thin film lithium niobate: Understanding the contrast mechanism,” Journal of Applied Physics, vol. 126, no. 11, Art. no. 114105, 2019, doi: 10.1063/1.5113727.' mla: 'Rüsing, Michael, et al. “Second Harmonic Microscopy of Poled X-Cut Thin Film Lithium Niobate: Understanding the Contrast Mechanism.” Journal of Applied Physics, vol. 126, no. 11, 114105, AIP Publishing, 2019, doi:10.1063/1.5113727.' short: M. Rüsing, J. Zhao, S. Mookherjea, Journal of Applied Physics 126 (2019). date_created: 2023-10-11T07:47:03Z date_updated: 2023-10-11T07:48:11Z doi: 10.1063/1.5113727 extern: '1' intvolume: ' 126' issue: '11' keyword: - General Physics and Astronomy language: - iso: eng main_file_link: - open_access: '1' url: https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.5113727/15233243/114105_1_online.pdf oa: '1' publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: 'Second harmonic microscopy of poled x-cut thin film lithium niobate: Understanding the contrast mechanism' type: journal_article user_id: '22501' volume: 126 year: '2019' ... --- _id: '1327' article_number: '103101' author: - first_name: N. full_name: Weber, N. last_name: Weber - first_name: S. P. full_name: Hoffmann, S. P. last_name: Hoffmann - first_name: M. full_name: Albert, M. last_name: Albert - first_name: Thomas full_name: Zentgraf, Thomas id: '30525' last_name: Zentgraf orcid: 0000-0002-8662-1101 - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 citation: ama: Weber N, Hoffmann SP, Albert M, Zentgraf T, Meier C. Efficient frequency conversion by combined photonic–plasmonic mode coupling. Journal of Applied Physics. 2018;123(10). doi:10.1063/1.5017010 apa: Weber, N., Hoffmann, S. P., Albert, M., Zentgraf, T., & Meier, C. (2018). Efficient frequency conversion by combined photonic–plasmonic mode coupling. Journal of Applied Physics, 123(10). https://doi.org/10.1063/1.5017010 bibtex: '@article{Weber_Hoffmann_Albert_Zentgraf_Meier_2018, title={Efficient frequency conversion by combined photonic–plasmonic mode coupling}, volume={123}, DOI={10.1063/1.5017010}, number={10103101}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Weber, N. and Hoffmann, S. P. and Albert, M. and Zentgraf, Thomas and Meier, Cedrik}, year={2018} }' chicago: Weber, N., S. P. Hoffmann, M. Albert, Thomas Zentgraf, and Cedrik Meier. “Efficient Frequency Conversion by Combined Photonic–Plasmonic Mode Coupling.” Journal of Applied Physics 123, no. 10 (2018). https://doi.org/10.1063/1.5017010. ieee: N. Weber, S. P. Hoffmann, M. Albert, T. Zentgraf, and C. Meier, “Efficient frequency conversion by combined photonic–plasmonic mode coupling,” Journal of Applied Physics, vol. 123, no. 10, 2018. mla: Weber, N., et al. “Efficient Frequency Conversion by Combined Photonic–Plasmonic Mode Coupling.” Journal of Applied Physics, vol. 123, no. 10, 103101, AIP Publishing, 2018, doi:10.1063/1.5017010. short: N. Weber, S.P. Hoffmann, M. Albert, T. Zentgraf, C. Meier, Journal of Applied Physics 123 (2018). date_created: 2018-03-16T08:41:10Z date_updated: 2022-01-06T06:51:31Z department: - _id: '15' - _id: '230' - _id: '287' - _id: '35' - _id: '289' doi: 10.1063/1.5017010 intvolume: ' 123' issue: '10' language: - iso: eng project: - _id: '53' name: TRR 142 - _id: '56' name: TRR 142 - Project Area C - _id: '75' name: TRR 142 - Subproject C5 - _id: '54' name: TRR 142 - Project Area A - _id: '62' name: TRR 142 - Subproject A5 publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Efficient frequency conversion by combined photonic–plasmonic mode coupling type: journal_article user_id: '82901' volume: 123 year: '2018' ... --- _id: '22569' article_number: '171912' author: - first_name: Vincent full_name: Layes, Vincent last_name: Layes - first_name: Sascha full_name: Monje, Sascha last_name: Monje - first_name: Carles full_name: Corbella, Carles last_name: Corbella - first_name: Volker full_name: Schulz-von der Gathen, Volker last_name: Schulz-von der Gathen - first_name: Achim full_name: von Keudell, Achim last_name: von Keudell - first_name: Maria Teresa full_name: de los Arcos de Pedro, Maria Teresa id: '54556' last_name: de los Arcos de Pedro citation: ama: 'Layes V, Monje S, Corbella C, Schulz-von der Gathen V, von Keudell A, de los Arcos de Pedro MT. Composite targets in HiPIMS plasmas: Correlation of in-vacuum XPS characterization and optical plasma diagnostics. Journal of Applied Physics. Published online 2017. doi:10.1063/1.4977820' apa: 'Layes, V., Monje, S., Corbella, C., Schulz-von der Gathen, V., von Keudell, A., & de los Arcos de Pedro, M. T. (2017). Composite targets in HiPIMS plasmas: Correlation of in-vacuum XPS characterization and optical plasma diagnostics. Journal of Applied Physics, Article 171912. https://doi.org/10.1063/1.4977820' bibtex: '@article{Layes_Monje_Corbella_Schulz-von der Gathen_von Keudell_de los Arcos de Pedro_2017, title={Composite targets in HiPIMS plasmas: Correlation of in-vacuum XPS characterization and optical plasma diagnostics}, DOI={10.1063/1.4977820}, number={171912}, journal={Journal of Applied Physics}, author={Layes, Vincent and Monje, Sascha and Corbella, Carles and Schulz-von der Gathen, Volker and von Keudell, Achim and de los Arcos de Pedro, Maria Teresa}, year={2017} }' chicago: 'Layes, Vincent, Sascha Monje, Carles Corbella, Volker Schulz-von der Gathen, Achim von Keudell, and Maria Teresa de los Arcos de Pedro. “Composite Targets in HiPIMS Plasmas: Correlation of in-Vacuum XPS Characterization and Optical Plasma Diagnostics.” Journal of Applied Physics, 2017. https://doi.org/10.1063/1.4977820.' ieee: 'V. Layes, S. Monje, C. Corbella, V. Schulz-von der Gathen, A. von Keudell, and M. T. de los Arcos de Pedro, “Composite targets in HiPIMS plasmas: Correlation of in-vacuum XPS characterization and optical plasma diagnostics,” Journal of Applied Physics, Art. no. 171912, 2017, doi: 10.1063/1.4977820.' mla: 'Layes, Vincent, et al. “Composite Targets in HiPIMS Plasmas: Correlation of in-Vacuum XPS Characterization and Optical Plasma Diagnostics.” Journal of Applied Physics, 171912, 2017, doi:10.1063/1.4977820.' short: V. Layes, S. Monje, C. Corbella, V. Schulz-von der Gathen, A. von Keudell, M.T. de los Arcos de Pedro, Journal of Applied Physics (2017). date_created: 2021-07-07T09:08:54Z date_updated: 2023-01-24T08:14:07Z department: - _id: '302' doi: 10.1063/1.4977820 language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: 'Composite targets in HiPIMS plasmas: Correlation of in-vacuum XPS characterization and optical plasma diagnostics' type: journal_article user_id: '54556' year: '2017' ... --- _id: '4815' article_number: '103901' author: - first_name: V. A. N. full_name: Righetti, V. A. N. last_name: Righetti - first_name: X. full_name: Gratens, X. last_name: Gratens - first_name: V. A. full_name: Chitta, V. A. last_name: Chitta - first_name: M. P. F. full_name: de Godoy, M. P. F. last_name: de Godoy - first_name: A. D. full_name: Rodrigues, A. D. last_name: Rodrigues - first_name: E. full_name: Abramof, E. last_name: Abramof - first_name: J. F. full_name: Dias, J. F. last_name: Dias - first_name: D. full_name: Schikora, D. last_name: Schikora - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 - first_name: K. full_name: Lischka, K. last_name: Lischka citation: ama: Righetti VAN, Gratens X, Chitta VA, et al. Magnetic and structural properties of Fe-implanted cubic GaN. Journal of Applied Physics. 2016;120(10). doi:10.1063/1.4962275 apa: Righetti, V. A. N., Gratens, X., Chitta, V. A., de Godoy, M. P. F., Rodrigues, A. D., Abramof, E., … Lischka, K. (2016). Magnetic and structural properties of Fe-implanted cubic GaN. Journal of Applied Physics, 120(10). https://doi.org/10.1063/1.4962275 bibtex: '@article{Righetti_Gratens_Chitta_de Godoy_Rodrigues_Abramof_Dias_Schikora_As_Lischka_2016, title={Magnetic and structural properties of Fe-implanted cubic GaN}, volume={120}, DOI={10.1063/1.4962275}, number={10103901}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Righetti, V. A. N. and Gratens, X. and Chitta, V. A. and de Godoy, M. P. F. and Rodrigues, A. D. and Abramof, E. and Dias, J. F. and Schikora, D. and As, Donat Josef and Lischka, K.}, year={2016} }' chicago: Righetti, V. A. N., X. Gratens, V. A. Chitta, M. P. F. de Godoy, A. D. Rodrigues, E. Abramof, J. F. Dias, D. Schikora, Donat Josef As, and K. Lischka. “Magnetic and Structural Properties of Fe-Implanted Cubic GaN.” Journal of Applied Physics 120, no. 10 (2016). https://doi.org/10.1063/1.4962275. ieee: V. A. N. Righetti et al., “Magnetic and structural properties of Fe-implanted cubic GaN,” Journal of Applied Physics, vol. 120, no. 10, 2016. mla: Righetti, V. A. N., et al. “Magnetic and Structural Properties of Fe-Implanted Cubic GaN.” Journal of Applied Physics, vol. 120, no. 10, 103901, AIP Publishing, 2016, doi:10.1063/1.4962275. short: V.A.N. Righetti, X. Gratens, V.A. Chitta, M.P.F. de Godoy, A.D. Rodrigues, E. Abramof, J.F. Dias, D. Schikora, D.J. As, K. Lischka, Journal of Applied Physics 120 (2016). date_created: 2018-10-24T08:05:48Z date_updated: 2022-01-06T07:01:25Z doi: 10.1063/1.4962275 intvolume: ' 120' issue: '10' publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Magnetic and structural properties of Fe-implanted cubic GaN type: journal_article user_id: '14' volume: 120 year: '2016' ... --- _id: '4239' abstract: - lang: eng text: "Confocal Raman spectroscopy is applied to identify ferroelectric domain structure sensitive\r\nphonon modes in potassium titanyl phosphate. Therefore, polarization-dependent measurements in\r\nvarious scattering configurations have been performed to characterize the fundamental Raman\r\nspectra of the material. The obtained spectra are discussed qualitatively based on an internal mode\r\nassignment. In the main part of this work, we have characterized z-cut periodically poled potassium\r\ntitanyl phosphate in terms of polarity- and structure-sensitive phonon modes. Here, we find vibrations\r\nwhose intensities are linked to the ferroelectric domain walls. We interpret this in terms of\r\nchanges in the polarizability originating from strain induced by domain boundaries and the inner\r\nfield distribution. Hence, a direct and 3D visualization of ferroelectric domain structures becomes\r\npossible in potassium titanyl phosphate." article_number: '044103' article_type: original author: - first_name: Michael full_name: Rüsing, Michael id: '22501' last_name: Rüsing orcid: 0000-0003-4682-4577 - first_name: Christof full_name: Eigner, Christof id: '13244' last_name: Eigner orcid: https://orcid.org/0000-0002-5693-3083 - first_name: P. full_name: Mackwitz, P. last_name: Mackwitz - first_name: Gerhard full_name: Berth, Gerhard id: '53' last_name: Berth - first_name: Christine full_name: Silberhorn, Christine id: '26263' last_name: Silberhorn - first_name: Artur full_name: Zrenner, Artur id: '606' last_name: Zrenner orcid: 0000-0002-5190-0944 citation: ama: 'Rüsing M, Eigner C, Mackwitz P, Berth G, Silberhorn C, Zrenner A. Identification of ferroelectric domain structure sensitive phonon modes in potassium titanyl phosphate: A fundamental study. Journal of Applied Physics. 2016;119(4). doi:10.1063/1.4940964' apa: 'Rüsing, M., Eigner, C., Mackwitz, P., Berth, G., Silberhorn, C., & Zrenner, A. (2016). Identification of ferroelectric domain structure sensitive phonon modes in potassium titanyl phosphate: A fundamental study. Journal of Applied Physics, 119(4), Article 044103. https://doi.org/10.1063/1.4940964' bibtex: '@article{Rüsing_Eigner_Mackwitz_Berth_Silberhorn_Zrenner_2016, title={Identification of ferroelectric domain structure sensitive phonon modes in potassium titanyl phosphate: A fundamental study}, volume={119}, DOI={10.1063/1.4940964}, number={4044103}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Rüsing, Michael and Eigner, Christof and Mackwitz, P. and Berth, Gerhard and Silberhorn, Christine and Zrenner, Artur}, year={2016} }' chicago: 'Rüsing, Michael, Christof Eigner, P. Mackwitz, Gerhard Berth, Christine Silberhorn, and Artur Zrenner. “Identification of Ferroelectric Domain Structure Sensitive Phonon Modes in Potassium Titanyl Phosphate: A Fundamental Study.” Journal of Applied Physics 119, no. 4 (2016). https://doi.org/10.1063/1.4940964.' ieee: 'M. Rüsing, C. Eigner, P. Mackwitz, G. Berth, C. Silberhorn, and A. Zrenner, “Identification of ferroelectric domain structure sensitive phonon modes in potassium titanyl phosphate: A fundamental study,” Journal of Applied Physics, vol. 119, no. 4, Art. no. 044103, 2016, doi: 10.1063/1.4940964.' mla: 'Rüsing, Michael, et al. “Identification of Ferroelectric Domain Structure Sensitive Phonon Modes in Potassium Titanyl Phosphate: A Fundamental Study.” Journal of Applied Physics, vol. 119, no. 4, 044103, AIP Publishing, 2016, doi:10.1063/1.4940964.' short: M. Rüsing, C. Eigner, P. Mackwitz, G. Berth, C. Silberhorn, A. Zrenner, Journal of Applied Physics 119 (2016). date_created: 2018-08-29T08:21:00Z date_updated: 2023-10-09T08:32:15Z department: - _id: '15' - _id: '230' - _id: '35' - _id: '288' doi: 10.1063/1.4940964 intvolume: ' 119' issue: '4' language: - iso: eng project: - _id: '53' grant_number: '231447078' name: TRR 142 - _id: '55' name: TRR 142 - Project Area B - _id: '68' grant_number: '231447078' name: TRR 142 - Subproject B3 publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: 'Identification of ferroelectric domain structure sensitive phonon modes in potassium titanyl phosphate: A fundamental study' type: journal_article user_id: '14931' volume: 119 year: '2016' ... --- _id: '4820' article_number: '225701' author: - first_name: J. H. full_name: Buß, J. H. last_name: Buß - first_name: T. full_name: Schupp, T. last_name: Schupp - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 - first_name: D. full_name: Hägele, D. last_name: Hägele - first_name: J. full_name: Rudolph, J. last_name: Rudolph citation: ama: Buß JH, Schupp T, As DJ, Hägele D, Rudolph J. Temperature dependence of the electron Landé g-factor in cubic GaN. Journal of Applied Physics. 2015;118(22). doi:10.1063/1.4937128 apa: Buß, J. H., Schupp, T., As, D. J., Hägele, D., & Rudolph, J. (2015). Temperature dependence of the electron Landé g-factor in cubic GaN. Journal of Applied Physics, 118(22). https://doi.org/10.1063/1.4937128 bibtex: '@article{Buß_Schupp_As_Hägele_Rudolph_2015, title={Temperature dependence of the electron Landé g-factor in cubic GaN}, volume={118}, DOI={10.1063/1.4937128}, number={22225701}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Buß, J. H. and Schupp, T. and As, Donat Josef and Hägele, D. and Rudolph, J.}, year={2015} }' chicago: Buß, J. H., T. Schupp, Donat Josef As, D. Hägele, and J. Rudolph. “Temperature Dependence of the Electron Landé G-Factor in Cubic GaN.” Journal of Applied Physics 118, no. 22 (2015). https://doi.org/10.1063/1.4937128. ieee: J. H. Buß, T. Schupp, D. J. As, D. Hägele, and J. Rudolph, “Temperature dependence of the electron Landé g-factor in cubic GaN,” Journal of Applied Physics, vol. 118, no. 22, 2015. mla: Buß, J. H., et al. “Temperature Dependence of the Electron Landé G-Factor in Cubic GaN.” Journal of Applied Physics, vol. 118, no. 22, 225701, AIP Publishing, 2015, doi:10.1063/1.4937128. short: J.H. Buß, T. Schupp, D.J. As, D. Hägele, J. Rudolph, Journal of Applied Physics 118 (2015). date_created: 2018-10-24T08:18:32Z date_updated: 2022-01-06T07:01:25Z doi: 10.1063/1.4937128 intvolume: ' 118' issue: '22' publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Temperature dependence of the electron Landé g-factor in cubic GaN type: journal_article user_id: '14' volume: 118 year: '2015' ... --- _id: '4825' article_number: '093906' author: - first_name: A. full_name: Schaefer, A. last_name: Schaefer - first_name: J. H. full_name: Buß, J. H. last_name: Buß - first_name: T. full_name: Schupp, T. last_name: Schupp - first_name: A. full_name: Zado, A. last_name: Zado - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 - first_name: D. full_name: Hägele, D. last_name: Hägele - first_name: J. full_name: Rudolph, J. last_name: Rudolph citation: ama: Schaefer A, Buß JH, Schupp T, et al. Strain dependent electron spin dynamics in bulk cubic GaN. Journal of Applied Physics. 2015;117(9). doi:10.1063/1.4914069 apa: Schaefer, A., Buß, J. H., Schupp, T., Zado, A., As, D. J., Hägele, D., & Rudolph, J. (2015). Strain dependent electron spin dynamics in bulk cubic GaN. Journal of Applied Physics, 117(9). https://doi.org/10.1063/1.4914069 bibtex: '@article{Schaefer_Buß_Schupp_Zado_As_Hägele_Rudolph_2015, title={Strain dependent electron spin dynamics in bulk cubic GaN}, volume={117}, DOI={10.1063/1.4914069}, number={9093906}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Schaefer, A. and Buß, J. H. and Schupp, T. and Zado, A. and As, Donat Josef and Hägele, D. and Rudolph, J.}, year={2015} }' chicago: Schaefer, A., J. H. Buß, T. Schupp, A. Zado, Donat Josef As, D. Hägele, and J. Rudolph. “Strain Dependent Electron Spin Dynamics in Bulk Cubic GaN.” Journal of Applied Physics 117, no. 9 (2015). https://doi.org/10.1063/1.4914069. ieee: A. Schaefer et al., “Strain dependent electron spin dynamics in bulk cubic GaN,” Journal of Applied Physics, vol. 117, no. 9, 2015. mla: Schaefer, A., et al. “Strain Dependent Electron Spin Dynamics in Bulk Cubic GaN.” Journal of Applied Physics, vol. 117, no. 9, 093906, AIP Publishing, 2015, doi:10.1063/1.4914069. short: A. Schaefer, J.H. Buß, T. Schupp, A. Zado, D.J. As, D. Hägele, J. Rudolph, Journal of Applied Physics 117 (2015). date_created: 2018-10-24T09:02:29Z date_updated: 2022-01-06T07:01:25Z doi: 10.1063/1.4914069 intvolume: ' 117' issue: '9' publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Strain dependent electron spin dynamics in bulk cubic GaN type: journal_article user_id: '14' volume: 117 year: '2015' ... --- _id: '1696' article_number: '213105' author: - first_name: Christina A. full_name: Bader, Christina A. last_name: Bader - first_name: Franziska full_name: Zeuner, Franziska last_name: Zeuner - first_name: Manuel H. W. full_name: Bader, Manuel H. W. last_name: Bader - first_name: Thomas full_name: Zentgraf, Thomas id: '30525' last_name: Zentgraf orcid: 0000-0002-8662-1101 - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 citation: ama: Bader CA, Zeuner F, Bader MHW, Zentgraf T, Meier C. Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators. Journal of Applied Physics. 2015;118(21). doi:10.1063/1.4936768 apa: Bader, C. A., Zeuner, F., Bader, M. H. W., Zentgraf, T., & Meier, C. (2015). Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators. Journal of Applied Physics, 118(21). https://doi.org/10.1063/1.4936768 bibtex: '@article{Bader_Zeuner_Bader_Zentgraf_Meier_2015, title={Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators}, volume={118}, DOI={10.1063/1.4936768}, number={21213105}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Bader, Christina A. and Zeuner, Franziska and Bader, Manuel H. W. and Zentgraf, Thomas and Meier, Cedrik}, year={2015} }' chicago: Bader, Christina A., Franziska Zeuner, Manuel H. W. Bader, Thomas Zentgraf, and Cedrik Meier. “Nonlinear Optical Sub-Bandgap Excitation of ZnO-Based Photonic Resonators.” Journal of Applied Physics 118, no. 21 (2015). https://doi.org/10.1063/1.4936768. ieee: C. A. Bader, F. Zeuner, M. H. W. Bader, T. Zentgraf, and C. Meier, “Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators,” Journal of Applied Physics, vol. 118, no. 21, 2015. mla: Bader, Christina A., et al. “Nonlinear Optical Sub-Bandgap Excitation of ZnO-Based Photonic Resonators.” Journal of Applied Physics, vol. 118, no. 21, 213105, AIP Publishing, 2015, doi:10.1063/1.4936768. short: C.A. Bader, F. Zeuner, M.H.W. Bader, T. Zentgraf, C. Meier, Journal of Applied Physics 118 (2015). date_created: 2018-03-22T18:33:32Z date_updated: 2022-01-06T06:53:00Z department: - _id: '15' - _id: '230' - _id: '287' - _id: '289' - _id: '35' doi: 10.1063/1.4936768 intvolume: ' 118' issue: '21' language: - iso: eng project: - _id: '53' name: TRR 142 - _id: '54' name: TRR 142 - Project Area A - _id: '62' name: TRR 142 - Subproject A5 publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Nonlinear optical sub-bandgap excitation of ZnO-based photonic resonators type: journal_article user_id: '20798' volume: 118 year: '2015' ... --- _id: '7232' article_number: '043909' author: - first_name: Fang-Yuh full_name: Lo, Fang-Yuh last_name: Lo - first_name: Cheng-De full_name: Huang, Cheng-De last_name: Huang - first_name: Kai-Chieh full_name: Chou, Kai-Chieh last_name: Chou - first_name: Jhong-Yu full_name: Guo, Jhong-Yu last_name: Guo - first_name: Hsiang-Lin full_name: Liu, Hsiang-Lin last_name: Liu - first_name: Verena full_name: Ney, Verena last_name: Ney - first_name: Andreas full_name: Ney, Andreas last_name: Ney - first_name: Stepan full_name: Shvarkov, Stepan last_name: Shvarkov - first_name: Sébastien full_name: Pezzagna, Sébastien last_name: Pezzagna - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Chi-Ta full_name: Chia, Chi-Ta last_name: Chia - first_name: Ming-Yau full_name: Chern, Ming-Yau last_name: Chern - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck - first_name: Jean full_name: Massies, Jean last_name: Massies citation: ama: Lo F-Y, Huang C-D, Chou K-C, et al. Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films. Journal of Applied Physics. 2014;116(4). doi:10.1063/1.4891226 apa: Lo, F.-Y., Huang, C.-D., Chou, K.-C., Guo, J.-Y., Liu, H.-L., Ney, V., … Massies, J. (2014). Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films. Journal of Applied Physics, 116(4). https://doi.org/10.1063/1.4891226 bibtex: '@article{Lo_Huang_Chou_Guo_Liu_Ney_Ney_Shvarkov_Pezzagna_Reuter_et al._2014, title={Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films}, volume={116}, DOI={10.1063/1.4891226}, number={4043909}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Lo, Fang-Yuh and Huang, Cheng-De and Chou, Kai-Chieh and Guo, Jhong-Yu and Liu, Hsiang-Lin and Ney, Verena and Ney, Andreas and Shvarkov, Stepan and Pezzagna, Sébastien and Reuter, Dirk and et al.}, year={2014} }' chicago: Lo, Fang-Yuh, Cheng-De Huang, Kai-Chieh Chou, Jhong-Yu Guo, Hsiang-Lin Liu, Verena Ney, Andreas Ney, et al. “Structural, Optical, and Magnetic Properties of Highly-Resistive Sm-Implanted GaN Thin Films.” Journal of Applied Physics 116, no. 4 (2014). https://doi.org/10.1063/1.4891226. ieee: F.-Y. Lo et al., “Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films,” Journal of Applied Physics, vol. 116, no. 4, 2014. mla: Lo, Fang-Yuh, et al. “Structural, Optical, and Magnetic Properties of Highly-Resistive Sm-Implanted GaN Thin Films.” Journal of Applied Physics, vol. 116, no. 4, 043909, AIP Publishing, 2014, doi:10.1063/1.4891226. short: F.-Y. Lo, C.-D. Huang, K.-C. Chou, J.-Y. Guo, H.-L. Liu, V. Ney, A. Ney, S. Shvarkov, S. Pezzagna, D. Reuter, C.-T. Chia, M.-Y. Chern, A.D. Wieck, J. Massies, Journal of Applied Physics 116 (2014). date_created: 2019-01-29T12:36:40Z date_updated: 2022-01-06T07:03:30Z department: - _id: '15' - _id: '230' doi: 10.1063/1.4891226 intvolume: ' 116' issue: '4' language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films type: journal_article user_id: '42514' volume: 116 year: '2014' ... --- _id: '23643' author: - first_name: J. full_name: Will, J. last_name: Will - first_name: A. full_name: Gröschel, A. last_name: Gröschel - first_name: D. full_name: Kot, D. last_name: Kot - first_name: M. A. full_name: Schubert, M. A. last_name: Schubert - first_name: C. full_name: Bergmann, C. last_name: Bergmann - first_name: Hans-Georg full_name: Steinrück, Hans-Georg id: '84268' last_name: Steinrück orcid: 0000-0001-6373-0877 - first_name: G. full_name: Kissinger, G. last_name: Kissinger - first_name: A. full_name: Magerl, A. last_name: Magerl citation: ama: Will J, Gröschel A, Kot D, et al. Oxygen diffusivity in silicon derived from dynamical X-ray diffraction. Journal of Applied Physics. 2013;7:073508. doi:10.1063/1.4792747 apa: Will, J., Gröschel, A., Kot, D., Schubert, M. A., Bergmann, C., Steinrück, H.-G., Kissinger, G., & Magerl, A. (2013). Oxygen diffusivity in silicon derived from dynamical X-ray diffraction. Journal of Applied Physics, 7, 073508. https://doi.org/10.1063/1.4792747 bibtex: '@article{Will_Gröschel_Kot_Schubert_Bergmann_Steinrück_Kissinger_Magerl_2013, title={Oxygen diffusivity in silicon derived from dynamical X-ray diffraction}, volume={7}, DOI={10.1063/1.4792747}, journal={Journal of Applied Physics}, author={Will, J. and Gröschel, A. and Kot, D. and Schubert, M. A. and Bergmann, C. and Steinrück, Hans-Georg and Kissinger, G. and Magerl, A.}, year={2013}, pages={073508} }' chicago: 'Will, J., A. Gröschel, D. Kot, M. A. Schubert, C. Bergmann, Hans-Georg Steinrück, G. Kissinger, and A. Magerl. “Oxygen Diffusivity in Silicon Derived from Dynamical X-Ray Diffraction.” Journal of Applied Physics 7 (2013): 073508. https://doi.org/10.1063/1.4792747.' ieee: 'J. Will et al., “Oxygen diffusivity in silicon derived from dynamical X-ray diffraction,” Journal of Applied Physics, vol. 7, p. 073508, 2013, doi: 10.1063/1.4792747.' mla: Will, J., et al. “Oxygen Diffusivity in Silicon Derived from Dynamical X-Ray Diffraction.” Journal of Applied Physics, vol. 7, 2013, p. 073508, doi:10.1063/1.4792747. short: J. Will, A. Gröschel, D. Kot, M.A. Schubert, C. Bergmann, H.-G. Steinrück, G. Kissinger, A. Magerl, Journal of Applied Physics 7 (2013) 073508. date_created: 2021-09-01T09:49:28Z date_updated: 2022-01-06T06:55:57Z department: - _id: '633' doi: 10.1063/1.4792747 intvolume: ' 7' language: - iso: eng page: '073508' publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: Oxygen diffusivity in silicon derived from dynamical X-ray diffraction type: journal_article user_id: '84268' volume: 7 year: '2013' ... --- _id: '39715' article_number: '173104' author: - first_name: Gaby full_name: Nordendorf, Gaby last_name: Nordendorf - first_name: Alexander full_name: Lorenz, Alexander last_name: Lorenz - first_name: Andreas full_name: Hoischen, Andreas last_name: Hoischen - first_name: Jürgen full_name: Schmidtke, Jürgen last_name: Schmidtke - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow - first_name: David full_name: Wilkes, David last_name: Wilkes - first_name: Michael full_name: Wittek, Michael last_name: Wittek citation: ama: Nordendorf G, Lorenz A, Hoischen A, et al. Hysteresis and memory factor of the Kerr effect in blue phases. Journal of Applied Physics. 2013;114(17). doi:10.1063/1.4828477 apa: Nordendorf, G., Lorenz, A., Hoischen, A., Schmidtke, J., Kitzerow, H.-S., Wilkes, D., & Wittek, M. (2013). Hysteresis and memory factor of the Kerr effect in blue phases. Journal of Applied Physics, 114(17), Article 173104. https://doi.org/10.1063/1.4828477 bibtex: '@article{Nordendorf_Lorenz_Hoischen_Schmidtke_Kitzerow_Wilkes_Wittek_2013, title={Hysteresis and memory factor of the Kerr effect in blue phases}, volume={114}, DOI={10.1063/1.4828477}, number={17173104}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Nordendorf, Gaby and Lorenz, Alexander and Hoischen, Andreas and Schmidtke, Jürgen and Kitzerow, Heinz-Siegfried and Wilkes, David and Wittek, Michael}, year={2013} }' chicago: Nordendorf, Gaby, Alexander Lorenz, Andreas Hoischen, Jürgen Schmidtke, Heinz-Siegfried Kitzerow, David Wilkes, and Michael Wittek. “Hysteresis and Memory Factor of the Kerr Effect in Blue Phases.” Journal of Applied Physics 114, no. 17 (2013). https://doi.org/10.1063/1.4828477. ieee: 'G. Nordendorf et al., “Hysteresis and memory factor of the Kerr effect in blue phases,” Journal of Applied Physics, vol. 114, no. 17, Art. no. 173104, 2013, doi: 10.1063/1.4828477.' mla: Nordendorf, Gaby, et al. “Hysteresis and Memory Factor of the Kerr Effect in Blue Phases.” Journal of Applied Physics, vol. 114, no. 17, 173104, AIP Publishing, 2013, doi:10.1063/1.4828477. short: G. Nordendorf, A. Lorenz, A. Hoischen, J. Schmidtke, H.-S. Kitzerow, D. Wilkes, M. Wittek, Journal of Applied Physics 114 (2013). date_created: 2023-01-24T18:31:09Z date_updated: 2023-01-24T18:31:34Z department: - _id: '313' - _id: '230' - _id: '638' doi: 10.1063/1.4828477 intvolume: ' 114' issue: '17' keyword: - General Physics and Astronomy language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Hysteresis and memory factor of the Kerr effect in blue phases type: journal_article user_id: '254' volume: 114 year: '2013' ... --- _id: '22603' article_number: '103306' author: - first_name: Marina full_name: Prenzel, Marina last_name: Prenzel - first_name: Maria Teresa full_name: de los Arcos de Pedro, Maria Teresa id: '54556' last_name: de los Arcos de Pedro - first_name: Annika full_name: Kortmann, Annika last_name: Kortmann - first_name: Jörg full_name: Winter, Jörg last_name: Winter - first_name: Achim full_name: von Keudell, Achim last_name: von Keudell citation: ama: Prenzel M, de los Arcos de Pedro MT, Kortmann A, Winter J, von Keudell A. Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films. Journal of Applied Physics. Published online 2012. doi:10.1063/1.4767383 apa: Prenzel, M., de los Arcos de Pedro, M. T., Kortmann, A., Winter, J., & von Keudell, A. (2012). Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films. Journal of Applied Physics, Article 103306. https://doi.org/10.1063/1.4767383 bibtex: '@article{Prenzel_de los Arcos de Pedro_Kortmann_Winter_von Keudell_2012, title={Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films}, DOI={10.1063/1.4767383}, number={103306}, journal={Journal of Applied Physics}, author={Prenzel, Marina and de los Arcos de Pedro, Maria Teresa and Kortmann, Annika and Winter, Jörg and von Keudell, Achim}, year={2012} }' chicago: Prenzel, Marina, Maria Teresa de los Arcos de Pedro, Annika Kortmann, Jörg Winter, and Achim von Keudell. “Embedded Argon as a Tool for Sampling Local Structure in Thin Plasma Deposited Aluminum Oxide Films.” Journal of Applied Physics, 2012. https://doi.org/10.1063/1.4767383. ieee: 'M. Prenzel, M. T. de los Arcos de Pedro, A. Kortmann, J. Winter, and A. von Keudell, “Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films,” Journal of Applied Physics, Art. no. 103306, 2012, doi: 10.1063/1.4767383.' mla: Prenzel, Marina, et al. “Embedded Argon as a Tool for Sampling Local Structure in Thin Plasma Deposited Aluminum Oxide Films.” Journal of Applied Physics, 103306, 2012, doi:10.1063/1.4767383. short: M. Prenzel, M.T. de los Arcos de Pedro, A. Kortmann, J. Winter, A. von Keudell, Journal of Applied Physics (2012). date_created: 2021-07-07T11:30:38Z date_updated: 2023-01-24T08:25:58Z department: - _id: '302' doi: 10.1063/1.4767383 extern: '1' language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films type: journal_article user_id: '54556' year: '2012' ... --- _id: '7719' article_number: '016106' author: - first_name: Y. S. full_name: Chen, Y. S. last_name: Chen - first_name: J. full_name: Huang, J. last_name: Huang - first_name: A. full_name: Ludwig, A. last_name: Ludwig - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: G. full_name: Bacher, G. last_name: Bacher citation: ama: Chen YS, Huang J, Ludwig A, Reuter D, Wieck AD, Bacher G. Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil. Journal of Applied Physics. 2011;109(1). doi:10.1063/1.3530731 apa: Chen, Y. S., Huang, J., Ludwig, A., Reuter, D., Wieck, A. D., & Bacher, G. (2011). Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil. Journal of Applied Physics, 109(1). https://doi.org/10.1063/1.3530731 bibtex: '@article{Chen_Huang_Ludwig_Reuter_Wieck_Bacher_2011, title={Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil}, volume={109}, DOI={10.1063/1.3530731}, number={1016106}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Chen, Y. S. and Huang, J. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Bacher, G.}, year={2011} }' chicago: Chen, Y. S., J. Huang, A. Ludwig, Dirk Reuter, A. D. Wieck, and G. Bacher. “Manipulation of Nuclear Spin Dynamics in N-GaAs Using an on-Chip Microcoil.” Journal of Applied Physics 109, no. 1 (2011). https://doi.org/10.1063/1.3530731. ieee: Y. S. Chen, J. Huang, A. Ludwig, D. Reuter, A. D. Wieck, and G. Bacher, “Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil,” Journal of Applied Physics, vol. 109, no. 1, 2011. mla: Chen, Y. S., et al. “Manipulation of Nuclear Spin Dynamics in N-GaAs Using an on-Chip Microcoil.” Journal of Applied Physics, vol. 109, no. 1, 016106, AIP Publishing, 2011, doi:10.1063/1.3530731. short: Y.S. Chen, J. Huang, A. Ludwig, D. Reuter, A.D. Wieck, G. Bacher, Journal of Applied Physics 109 (2011). date_created: 2019-02-14T10:41:44Z date_updated: 2022-01-06T07:03:45Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3530731 intvolume: ' 109' issue: '1' language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil type: journal_article user_id: '42514' volume: 109 year: '2011' ... --- _id: '4146' abstract: - lang: eng text: The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {111} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, μ-Raman and cathodoluminescence spectroscopy. article_number: '123512' article_type: original author: - first_name: Ricarda full_name: Maria Kemper, Ricarda last_name: Maria Kemper - first_name: Thorsten full_name: Schupp, Thorsten last_name: Schupp - first_name: Maik full_name: Häberlen, Maik last_name: Häberlen - first_name: Thomas full_name: Niendorf, Thomas last_name: Niendorf - first_name: Hans-Jürgen full_name: Maier, Hans-Jürgen last_name: Maier - first_name: Anja full_name: Dempewolf, Anja last_name: Dempewolf - first_name: Frank full_name: Bertram, Frank last_name: Bertram - first_name: Jürgen full_name: Christen, Jürgen last_name: Christen - first_name: Ronny full_name: Kirste, Ronny last_name: Kirste - first_name: Axel full_name: Hoffmann, Axel last_name: Hoffmann - first_name: Jörg full_name: Lindner, Jörg id: '20797' last_name: Lindner - first_name: Donat full_name: As, Donat id: '14' last_name: As orcid: 0000-0003-1121-3565 citation: ama: Maria Kemper R, Schupp T, Häberlen M, et al. Anti-phase domains in cubic GaN. Journal of Applied Physics. 2011;110(12). doi:10.1063/1.3666050 apa: Maria Kemper, R., Schupp, T., Häberlen, M., Niendorf, T., Maier, H.-J., Dempewolf, A., Bertram, F., Christen, J., Kirste, R., Hoffmann, A., Lindner, J., & As, D. (2011). Anti-phase domains in cubic GaN. Journal of Applied Physics, 110(12), Article 123512. https://doi.org/10.1063/1.3666050 bibtex: '@article{Maria Kemper_Schupp_Häberlen_Niendorf_Maier_Dempewolf_Bertram_Christen_Kirste_Hoffmann_et al._2011, title={Anti-phase domains in cubic GaN}, volume={110}, DOI={10.1063/1.3666050}, number={12123512}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Maria Kemper, Ricarda and Schupp, Thorsten and Häberlen, Maik and Niendorf, Thomas and Maier, Hans-Jürgen and Dempewolf, Anja and Bertram, Frank and Christen, Jürgen and Kirste, Ronny and Hoffmann, Axel and et al.}, year={2011} }' chicago: Maria Kemper, Ricarda, Thorsten Schupp, Maik Häberlen, Thomas Niendorf, Hans-Jürgen Maier, Anja Dempewolf, Frank Bertram, et al. “Anti-Phase Domains in Cubic GaN.” Journal of Applied Physics 110, no. 12 (2011). https://doi.org/10.1063/1.3666050. ieee: 'R. Maria Kemper et al., “Anti-phase domains in cubic GaN,” Journal of Applied Physics, vol. 110, no. 12, Art. no. 123512, 2011, doi: 10.1063/1.3666050.' mla: Maria Kemper, Ricarda, et al. “Anti-Phase Domains in Cubic GaN.” Journal of Applied Physics, vol. 110, no. 12, 123512, AIP Publishing, 2011, doi:10.1063/1.3666050. short: R. Maria Kemper, T. Schupp, M. Häberlen, T. Niendorf, H.-J. Maier, A. Dempewolf, F. Bertram, J. Christen, R. Kirste, A. Hoffmann, J. Lindner, D. As, Journal of Applied Physics 110 (2011). date_created: 2018-08-27T12:40:30Z date_updated: 2023-10-09T09:10:50Z ddc: - '530' department: - _id: '15' - _id: '286' doi: 10.1063/1.3666050 file: - access_level: closed content_type: application/pdf creator: hclaudia date_created: 2018-08-27T12:42:38Z date_updated: 2018-08-27T12:42:38Z file_id: '4147' file_name: Anti-phase domains in cubic GaN.pdf file_size: 3305430 relation: main_file success: 1 file_date_updated: 2018-08-27T12:42:38Z has_accepted_license: '1' intvolume: ' 110' issue: '12' language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Anti-phase domains in cubic GaN type: journal_article user_id: '14931' volume: 110 year: '2011' ... --- _id: '7985' article_number: '063902' author: - first_name: E. full_name: Schuster, E. last_name: Schuster - first_name: R. A. full_name: Brand, R. A. last_name: Brand - first_name: F. full_name: Stromberg, F. last_name: Stromberg - first_name: A. full_name: Ludwig, A. last_name: Ludwig - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: S. full_name: Hövel, S. last_name: Hövel - first_name: N. C. full_name: Gerhardt, N. C. last_name: Gerhardt - first_name: M. R. full_name: Hofmann, M. R. last_name: Hofmann - first_name: H. full_name: Wende, H. last_name: Wende - first_name: W. full_name: Keune, W. last_name: Keune citation: ama: 'Schuster E, Brand RA, Stromberg F, et al. Epitaxial growth and interfacial magnetism of spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype system. Journal of Applied Physics. 2010;108(6). doi:10.1063/1.3476265' apa: 'Schuster, E., Brand, R. A., Stromberg, F., Ludwig, A., Reuter, D., Wieck, A. D., … Keune, W. (2010). Epitaxial growth and interfacial magnetism of spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype system. Journal of Applied Physics, 108(6). https://doi.org/10.1063/1.3476265' bibtex: '@article{Schuster_Brand_Stromberg_Ludwig_Reuter_Wieck_Hövel_Gerhardt_Hofmann_Wende_et al._2010, title={Epitaxial growth and interfacial magnetism of spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype system}, volume={108}, DOI={10.1063/1.3476265}, number={6063902}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Schuster, E. and Brand, R. A. and Stromberg, F. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Wende, H. and et al.}, year={2010} }' chicago: 'Schuster, E., R. A. Brand, F. Stromberg, A. Ludwig, Dirk Reuter, A. D. Wieck, S. Hövel, et al. “Epitaxial Growth and Interfacial Magnetism of Spin Aligner for Remanent Spin Injection: [Fe/Tb]n/Fe/MgO/GaAs-Light Emitting Diode as a Prototype System.” Journal of Applied Physics 108, no. 6 (2010). https://doi.org/10.1063/1.3476265.' ieee: 'E. Schuster et al., “Epitaxial growth and interfacial magnetism of spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype system,” Journal of Applied Physics, vol. 108, no. 6, 2010.' mla: 'Schuster, E., et al. “Epitaxial Growth and Interfacial Magnetism of Spin Aligner for Remanent Spin Injection: [Fe/Tb]n/Fe/MgO/GaAs-Light Emitting Diode as a Prototype System.” Journal of Applied Physics, vol. 108, no. 6, 063902, AIP Publishing, 2010, doi:10.1063/1.3476265.' short: E. Schuster, R.A. Brand, F. Stromberg, A. Ludwig, D. Reuter, A.D. Wieck, S. Hövel, N.C. Gerhardt, M.R. Hofmann, H. Wende, W. Keune, Journal of Applied Physics 108 (2010). date_created: 2019-02-21T14:37:35Z date_updated: 2022-01-06T07:03:48Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3476265 intvolume: ' 108' issue: '6' language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: 'Epitaxial growth and interfacial magnetism of spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype system' type: journal_article user_id: '42514' volume: 108 year: '2010' ... --- _id: '4202' abstract: - lang: eng text: "Unintentional doping in nonpolar a-plane \x01112¯0\x02 gallium nitride \x01GaN\x02 grown on r-plane \x0111¯02\x02\r\nsapphire using a three-dimensional \x013D\x02–two-dimensional \x012D\x02 growth method has been\r\ncharacterized. For both 2D only and 3D–2D growth, the presence of an unintentionally doped region\r\nadjacent to the GaN/sapphire interface is observed by scanning capacitance microscopy \x01SCM\x02. The\r\naverage width of this unintentionally doped layer is found to increase with increasing 3D growth\r\ntime. By using an intentionally doped GaN:Si staircase structure for calibration, it is shown that the\r\nunintentionally doped region has an average carrier concentration of \x012.5\x010.3\x02\x021018 cm−3. SCM\r\nalso reveals the presence of unintentionally doped features extending at 60° from the GaN/sapphire\r\ninterface. The observation of decreasing carrier concentration with distance from the GaN/sapphire\r\ninterface along these features may suggest that the unintentional doping arises from oxygen\r\ndiffusion from the sapphire substrate. Low temperature cathodoluminescence spectra reveal\r\nemission peaks at 3.41 and 3.30 eV, which are believed to originate from basal plane stacking faults\r\n\x01BSFs\x02 and prismatic stacking faults \x01PSFs\x02, respectively. It is shown that the inclined features\r\nextending from the GaN/sapphire interface exhibit both enhanced BSF and PSF emission. We\r\nsuggest that enhanced unintentional doping occurs in regions around PSFs. Where BSFs intersect\r\nthis doped material their emission is also enhanced due to reduced nonradiative recombination.\r\nTransmission electron microscopy confirms the presence of PSFs extending through the film at 60°\r\nfrom the GaN/sapphire interface." article_number: '023503' article_type: original author: - first_name: Tongtong full_name: Zhu, Tongtong last_name: Zhu - first_name: Carol F. full_name: Johnston, Carol F. last_name: Johnston - first_name: Maik full_name: Häberlen, Maik last_name: Häberlen - first_name: Menno J. full_name: Kappers, Menno J. last_name: Kappers - first_name: Rachel A. full_name: Oliver, Rachel A. last_name: Oliver citation: ama: Zhu T, Johnston CF, Häberlen M, Kappers MJ, Oliver RA. Characterization of unintentional doping in nonpolar GaN. Journal of Applied Physics. 2010;107(2). doi:10.1063/1.3284944 apa: Zhu, T., Johnston, C. F., Häberlen, M., Kappers, M. J., & Oliver, R. A. (2010). Characterization of unintentional doping in nonpolar GaN. Journal of Applied Physics, 107(2). https://doi.org/10.1063/1.3284944 bibtex: '@article{Zhu_Johnston_Häberlen_Kappers_Oliver_2010, title={Characterization of unintentional doping in nonpolar GaN}, volume={107}, DOI={10.1063/1.3284944}, number={2023503}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zhu, Tongtong and Johnston, Carol F. and Häberlen, Maik and Kappers, Menno J. and Oliver, Rachel A.}, year={2010} }' chicago: Zhu, Tongtong, Carol F. Johnston, Maik Häberlen, Menno J. Kappers, and Rachel A. Oliver. “Characterization of Unintentional Doping in Nonpolar GaN.” Journal of Applied Physics 107, no. 2 (2010). https://doi.org/10.1063/1.3284944. ieee: T. Zhu, C. F. Johnston, M. Häberlen, M. J. Kappers, and R. A. Oliver, “Characterization of unintentional doping in nonpolar GaN,” Journal of Applied Physics, vol. 107, no. 2, 2010. mla: Zhu, Tongtong, et al. “Characterization of Unintentional Doping in Nonpolar GaN.” Journal of Applied Physics, vol. 107, no. 2, 023503, AIP Publishing, 2010, doi:10.1063/1.3284944. short: T. Zhu, C.F. Johnston, M. Häberlen, M.J. Kappers, R.A. Oliver, Journal of Applied Physics 107 (2010). date_created: 2018-08-28T12:27:34Z date_updated: 2022-01-06T07:00:34Z ddc: - '530' department: - _id: '15' doi: 10.1063/1.3284944 extern: '1' file: - access_level: closed content_type: application/pdf creator: hclaudia date_created: 2018-08-28T12:28:22Z date_updated: 2018-08-28T12:28:22Z file_id: '4203' file_name: Characterization of unintentional doping in nonpolar GaN.pdf file_size: 688753 relation: main_file success: 1 file_date_updated: 2018-08-28T12:28:22Z has_accepted_license: '1' intvolume: ' 107' issue: '2' language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Characterization of unintentional doping in nonpolar GaN type: journal_article user_id: '55706' volume: 107 year: '2010' ... --- _id: '4212' abstract: - lang: eng text: "Low temperature cathodo- and photoluminescence has been performed on nonpolar a-plane GaN films grown using epitaxial lateral overgrowth. In films overgrown at a low V–III ratio, the emission spectrum is dominated by “yellow” and “blue” luminescence bands, attributed to recombination at point defects or impurities. The intensity of this emission is observed to decrease steadily across the window region along the −c direction, possibly due to asymmetric diffusion of a point defect/impurity species. When overgrown at a higher V–III ratio, the near band edge and basal-plane stacking fault emission intensity increases by orders of magnitude and a donor–acceptor pair band is observed. Using monochromatic cathodoluminescence imaging, the various emission features are correlated with the microstructure of the film. In particular, the peak energy of the basal-plane stacking fault emission is seen to be blueshifted by \x0415 meV in the wing relative to the window region, which may be related to the different strain states in the respective regions." article_number: '033523' article_type: original author: - first_name: M. full_name: Häberlen, M. last_name: Häberlen - first_name: T. J. full_name: Badcock, T. J. last_name: Badcock - first_name: M. A. full_name: Moram, M. A. last_name: Moram - first_name: J. L. full_name: Hollander, J. L. last_name: Hollander - first_name: M. J. full_name: Kappers, M. J. last_name: Kappers - first_name: P. full_name: Dawson, P. last_name: Dawson - first_name: C. J. full_name: Humphreys, C. J. last_name: Humphreys - first_name: R. A. full_name: Oliver, R. A. last_name: Oliver citation: ama: Häberlen M, Badcock TJ, Moram MA, et al. Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. Journal of Applied Physics. 2010;108(3). doi:10.1063/1.3460641 apa: Häberlen, M., Badcock, T. J., Moram, M. A., Hollander, J. L., Kappers, M. J., Dawson, P., … Oliver, R. A. (2010). Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. Journal of Applied Physics, 108(3). https://doi.org/10.1063/1.3460641 bibtex: '@article{Häberlen_Badcock_Moram_Hollander_Kappers_Dawson_Humphreys_Oliver_2010, title={Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth}, volume={108}, DOI={10.1063/1.3460641}, number={3033523}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Häberlen, M. and Badcock, T. J. and Moram, M. A. and Hollander, J. L. and Kappers, M. J. and Dawson, P. and Humphreys, C. J. and Oliver, R. A.}, year={2010} }' chicago: Häberlen, M., T. J. Badcock, M. A. Moram, J. L. Hollander, M. J. Kappers, P. Dawson, C. J. Humphreys, and R. A. Oliver. “Low Temperature Photoluminescence and Cathodoluminescence Studies of Nonpolar GaN Grown Using Epitaxial Lateral Overgrowth.” Journal of Applied Physics 108, no. 3 (2010). https://doi.org/10.1063/1.3460641. ieee: M. Häberlen et al., “Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth,” Journal of Applied Physics, vol. 108, no. 3, 2010. mla: Häberlen, M., et al. “Low Temperature Photoluminescence and Cathodoluminescence Studies of Nonpolar GaN Grown Using Epitaxial Lateral Overgrowth.” Journal of Applied Physics, vol. 108, no. 3, 033523, AIP Publishing, 2010, doi:10.1063/1.3460641. short: M. Häberlen, T.J. Badcock, M.A. Moram, J.L. Hollander, M.J. Kappers, P. Dawson, C.J. Humphreys, R.A. Oliver, Journal of Applied Physics 108 (2010). date_created: 2018-08-28T12:46:49Z date_updated: 2022-01-06T07:00:37Z ddc: - '530' department: - _id: '15' doi: 10.1063/1.3460641 file: - access_level: closed content_type: application/pdf creator: hclaudia date_created: 2018-08-28T12:47:23Z date_updated: 2018-08-28T12:47:23Z file_id: '4213' file_name: Low temperature photoluminescence and cathodoluminescence studies of non-polar GaN grown using epitaxial lateral overgrowth.pdf file_size: 2391054 relation: main_file success: 1 file_date_updated: 2018-08-28T12:47:23Z has_accepted_license: '1' intvolume: ' 108' issue: '3' language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth type: journal_article user_id: '55706' volume: 108 year: '2010' ... --- _id: '39747' article_number: '013540' author: - first_name: A. full_name: Hoischen, A. last_name: Hoischen - first_name: S. A. full_name: Benning, S. A. last_name: Benning - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: 'Hoischen A, Benning SA, Kitzerow H-S. Electroconvection of liquid crystals: Tool for fabricating modulated polymer surfaces. Journal of Applied Physics. 2009;105(1). doi:10.1063/1.3055398' apa: 'Hoischen, A., Benning, S. A., & Kitzerow, H.-S. (2009). Electroconvection of liquid crystals: Tool for fabricating modulated polymer surfaces. Journal of Applied Physics, 105(1), Article 013540. https://doi.org/10.1063/1.3055398' bibtex: '@article{Hoischen_Benning_Kitzerow_2009, title={Electroconvection of liquid crystals: Tool for fabricating modulated polymer surfaces}, volume={105}, DOI={10.1063/1.3055398}, number={1013540}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Hoischen, A. and Benning, S. A. and Kitzerow, Heinz-Siegfried}, year={2009} }' chicago: 'Hoischen, A., S. A. Benning, and Heinz-Siegfried Kitzerow. “Electroconvection of Liquid Crystals: Tool for Fabricating Modulated Polymer Surfaces.” Journal of Applied Physics 105, no. 1 (2009). https://doi.org/10.1063/1.3055398.' ieee: 'A. Hoischen, S. A. Benning, and H.-S. Kitzerow, “Electroconvection of liquid crystals: Tool for fabricating modulated polymer surfaces,” Journal of Applied Physics, vol. 105, no. 1, Art. no. 013540, 2009, doi: 10.1063/1.3055398.' mla: 'Hoischen, A., et al. “Electroconvection of Liquid Crystals: Tool for Fabricating Modulated Polymer Surfaces.” Journal of Applied Physics, vol. 105, no. 1, 013540, AIP Publishing, 2009, doi:10.1063/1.3055398.' short: A. Hoischen, S.A. Benning, H.-S. Kitzerow, Journal of Applied Physics 105 (2009). date_created: 2023-01-24T18:51:19Z date_updated: 2023-01-24T18:51:47Z department: - _id: '313' - _id: '638' doi: 10.1063/1.3055398 intvolume: ' 105' issue: '1' keyword: - General Physics and Astronomy language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: 'Electroconvection of liquid crystals: Tool for fabricating modulated polymer surfaces' type: journal_article user_id: '254' volume: 105 year: '2009' ... --- _id: '7643' article_number: '103112' author: - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Andreas full_name: Gondorf, Andreas last_name: Gondorf - first_name: Stephan full_name: Lüttjohann, Stephan last_name: Lüttjohann - first_name: Axel full_name: Lorke, Axel last_name: Lorke - first_name: Hartmut full_name: Wiggers, Hartmut last_name: Wiggers citation: ama: 'Meier C, Gondorf A, Lüttjohann S, Lorke A, Wiggers H. Silicon nanoparticles: Absorption, emission, and the nature of the electronic bandgap. Journal of Applied Physics. 2007;101(10). doi:10.1063/1.2720095' apa: 'Meier, C., Gondorf, A., Lüttjohann, S., Lorke, A., & Wiggers, H. (2007). Silicon nanoparticles: Absorption, emission, and the nature of the electronic bandgap. Journal of Applied Physics, 101(10). https://doi.org/10.1063/1.2720095' bibtex: '@article{Meier_Gondorf_Lüttjohann_Lorke_Wiggers_2007, title={Silicon nanoparticles: Absorption, emission, and the nature of the electronic bandgap}, volume={101}, DOI={10.1063/1.2720095}, number={10103112}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Meier, Cedrik and Gondorf, Andreas and Lüttjohann, Stephan and Lorke, Axel and Wiggers, Hartmut}, year={2007} }' chicago: 'Meier, Cedrik, Andreas Gondorf, Stephan Lüttjohann, Axel Lorke, and Hartmut Wiggers. “Silicon Nanoparticles: Absorption, Emission, and the Nature of the Electronic Bandgap.” Journal of Applied Physics 101, no. 10 (2007). https://doi.org/10.1063/1.2720095.' ieee: 'C. Meier, A. Gondorf, S. Lüttjohann, A. Lorke, and H. Wiggers, “Silicon nanoparticles: Absorption, emission, and the nature of the electronic bandgap,” Journal of Applied Physics, vol. 101, no. 10, 2007.' mla: 'Meier, Cedrik, et al. “Silicon Nanoparticles: Absorption, Emission, and the Nature of the Electronic Bandgap.” Journal of Applied Physics, vol. 101, no. 10, 103112, AIP Publishing, 2007, doi:10.1063/1.2720095.' short: C. Meier, A. Gondorf, S. Lüttjohann, A. Lorke, H. Wiggers, Journal of Applied Physics 101 (2007). date_created: 2019-02-13T11:33:50Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2720095 extern: '1' intvolume: ' 101' issue: '10' language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: 'Silicon nanoparticles: Absorption, emission, and the nature of the electronic bandgap' type: journal_article user_id: '20798' volume: 101 year: '2007' ... --- _id: '7648' article_number: '113108' author: - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Stephan full_name: Lüttjohann, Stephan last_name: Lüttjohann - first_name: Vasyl G. full_name: Kravets, Vasyl G. last_name: Kravets - first_name: Hermann full_name: Nienhaus, Hermann last_name: Nienhaus - first_name: Axel full_name: Lorke, Axel last_name: Lorke - first_name: Pascal full_name: Ifeacho, Pascal last_name: Ifeacho - first_name: Hartmut full_name: Wiggers, Hartmut last_name: Wiggers - first_name: Christof full_name: Schulz, Christof last_name: Schulz - first_name: Marcus K. full_name: Kennedy, Marcus K. last_name: Kennedy - first_name: F. Einar full_name: Kruis, F. Einar last_name: Kruis citation: ama: Meier C, Lüttjohann S, Kravets VG, et al. Vibrational and defect states in SnOx nanoparticles. Journal of Applied Physics. 2006;99(11). doi:10.1063/1.2203408 apa: Meier, C., Lüttjohann, S., Kravets, V. G., Nienhaus, H., Lorke, A., Ifeacho, P., … Kruis, F. E. (2006). Vibrational and defect states in SnOx nanoparticles. Journal of Applied Physics, 99(11). https://doi.org/10.1063/1.2203408 bibtex: '@article{Meier_Lüttjohann_Kravets_Nienhaus_Lorke_Ifeacho_Wiggers_Schulz_Kennedy_Kruis_2006, title={Vibrational and defect states in SnOx nanoparticles}, volume={99}, DOI={10.1063/1.2203408}, number={11113108}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Meier, Cedrik and Lüttjohann, Stephan and Kravets, Vasyl G. and Nienhaus, Hermann and Lorke, Axel and Ifeacho, Pascal and Wiggers, Hartmut and Schulz, Christof and Kennedy, Marcus K. and Kruis, F. Einar}, year={2006} }' chicago: Meier, Cedrik, Stephan Lüttjohann, Vasyl G. Kravets, Hermann Nienhaus, Axel Lorke, Pascal Ifeacho, Hartmut Wiggers, Christof Schulz, Marcus K. Kennedy, and F. Einar Kruis. “Vibrational and Defect States in SnOx Nanoparticles.” Journal of Applied Physics 99, no. 11 (2006). https://doi.org/10.1063/1.2203408. ieee: C. Meier et al., “Vibrational and defect states in SnOx nanoparticles,” Journal of Applied Physics, vol. 99, no. 11, 2006. mla: Meier, Cedrik, et al. “Vibrational and Defect States in SnOx Nanoparticles.” Journal of Applied Physics, vol. 99, no. 11, 113108, AIP Publishing, 2006, doi:10.1063/1.2203408. short: C. Meier, S. Lüttjohann, V.G. Kravets, H. Nienhaus, A. Lorke, P. Ifeacho, H. Wiggers, C. Schulz, M.K. Kennedy, F.E. Kruis, Journal of Applied Physics 99 (2006). date_created: 2019-02-13T11:38:17Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2203408 extern: '1' intvolume: ' 99' issue: '11' language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Vibrational and defect states in SnOx nanoparticles type: journal_article user_id: '20798' volume: 99 year: '2006' ... --- _id: '8651' article_number: '073907' author: - first_name: N. C. full_name: Gerhardt, N. C. last_name: Gerhardt - first_name: S. full_name: Hövel, S. last_name: Hövel - first_name: C. full_name: Brenner, C. last_name: Brenner - first_name: M. R. full_name: Hofmann, M. R. last_name: Hofmann - first_name: F.-Y. full_name: Lo, F.-Y. last_name: Lo - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: E. full_name: Schuster, E. last_name: Schuster - first_name: W. full_name: Keune, W. last_name: Keune - first_name: S. full_name: Halm, S. last_name: Halm - first_name: G. full_name: Bacher, G. last_name: Bacher - first_name: K. full_name: Westerholt, K. last_name: Westerholt citation: ama: Gerhardt NC, Hövel S, Brenner C, et al. Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts. Journal of Applied Physics. 2006. doi:10.1063/1.2186376 apa: Gerhardt, N. C., Hövel, S., Brenner, C., Hofmann, M. R., Lo, F.-Y., Reuter, D., … Westerholt, K. (2006). Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts. Journal of Applied Physics. https://doi.org/10.1063/1.2186376 bibtex: '@article{Gerhardt_Hövel_Brenner_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Halm_et al._2006, title={Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts}, DOI={10.1063/1.2186376}, number={073907}, journal={Journal of Applied Physics}, author={Gerhardt, N. C. and Hövel, S. and Brenner, C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Keune, W. and Halm, S. and et al.}, year={2006} }' chicago: Gerhardt, N. C., S. Hövel, C. Brenner, M. R. Hofmann, F.-Y. Lo, Dirk Reuter, A. D. Wieck, et al. “Spin Injection Light-Emitting Diode with Vertically Magnetized Ferromagnetic Metal Contacts.” Journal of Applied Physics, 2006. https://doi.org/10.1063/1.2186376. ieee: N. C. Gerhardt et al., “Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts,” Journal of Applied Physics, 2006. mla: Gerhardt, N. C., et al. “Spin Injection Light-Emitting Diode with Vertically Magnetized Ferromagnetic Metal Contacts.” Journal of Applied Physics, 073907, 2006, doi:10.1063/1.2186376. short: N.C. Gerhardt, S. Hövel, C. Brenner, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D. Wieck, E. Schuster, W. Keune, S. Halm, G. Bacher, K. Westerholt, Journal of Applied Physics (2006). date_created: 2019-03-27T07:57:04Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2186376 language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts type: journal_article user_id: '42514' year: '2006' ... --- _id: '29683' article_number: '063903' author: - first_name: V. full_name: Höink, V. last_name: Höink - first_name: Marc full_name: Sacher, Marc id: '26883' last_name: Sacher - first_name: J. full_name: Schmalhorst, J. last_name: Schmalhorst - first_name: G. full_name: Reiss, G. last_name: Reiss - first_name: D. full_name: Engel, D. last_name: Engel - first_name: T. full_name: Weis, T. last_name: Weis - first_name: A. full_name: Ehresmann, A. last_name: Ehresmann citation: ama: Höink V, Sacher M, Schmalhorst J, et al. Switchable resonant x-ray Bragg scattering on a magnetic grating patterned by ion bombardment. Journal of Applied Physics. 2006;100(6). doi:10.1063/1.2349568 apa: Höink, V., Sacher, M., Schmalhorst, J., Reiss, G., Engel, D., Weis, T., & Ehresmann, A. (2006). Switchable resonant x-ray Bragg scattering on a magnetic grating patterned by ion bombardment. Journal of Applied Physics, 100(6), Article 063903. https://doi.org/10.1063/1.2349568 bibtex: '@article{Höink_Sacher_Schmalhorst_Reiss_Engel_Weis_Ehresmann_2006, title={Switchable resonant x-ray Bragg scattering on a magnetic grating patterned by ion bombardment}, volume={100}, DOI={10.1063/1.2349568}, number={6063903}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Höink, V. and Sacher, Marc and Schmalhorst, J. and Reiss, G. and Engel, D. and Weis, T. and Ehresmann, A.}, year={2006} }' chicago: Höink, V., Marc Sacher, J. Schmalhorst, G. Reiss, D. Engel, T. Weis, and A. Ehresmann. “Switchable Resonant X-Ray Bragg Scattering on a Magnetic Grating Patterned by Ion Bombardment.” Journal of Applied Physics 100, no. 6 (2006). https://doi.org/10.1063/1.2349568. ieee: 'V. Höink et al., “Switchable resonant x-ray Bragg scattering on a magnetic grating patterned by ion bombardment,” Journal of Applied Physics, vol. 100, no. 6, Art. no. 063903, 2006, doi: 10.1063/1.2349568.' mla: Höink, V., et al. “Switchable Resonant X-Ray Bragg Scattering on a Magnetic Grating Patterned by Ion Bombardment.” Journal of Applied Physics, vol. 100, no. 6, 063903, AIP Publishing, 2006, doi:10.1063/1.2349568. short: V. Höink, M. Sacher, J. Schmalhorst, G. Reiss, D. Engel, T. Weis, A. Ehresmann, Journal of Applied Physics 100 (2006). date_created: 2022-01-31T10:15:57Z date_updated: 2022-01-31T10:16:18Z department: - _id: '15' - _id: '576' doi: 10.1063/1.2349568 extern: '1' intvolume: ' 100' issue: '6' keyword: - General Physics and Astronomy language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Switchable resonant x-ray Bragg scattering on a magnetic grating patterned by ion bombardment type: journal_article user_id: '26883' volume: 100 year: '2006' ... --- _id: '29681' article_number: '113903' author: - first_name: J. full_name: Schmalhorst, J. last_name: Schmalhorst - first_name: Marc full_name: Sacher, Marc id: '26883' last_name: Sacher - first_name: V. full_name: Höink, V. last_name: Höink - first_name: G. full_name: Reiss, G. last_name: Reiss - first_name: A. full_name: Hütten, A. last_name: Hütten - first_name: D. full_name: Engel, D. last_name: Engel - first_name: A. full_name: Ehresmann, A. last_name: Ehresmann citation: ama: Schmalhorst J, Sacher M, Höink V, et al. Magnetic and chemical properties of Co[sub 2]MnSi thin films compared to the Co[sub 2]MnSi∕Al-O interface. Journal of Applied Physics. 2006;100(11). doi:10.1063/1.2384806 apa: Schmalhorst, J., Sacher, M., Höink, V., Reiss, G., Hütten, A., Engel, D., & Ehresmann, A. (2006). Magnetic and chemical properties of Co[sub 2]MnSi thin films compared to the Co[sub 2]MnSi∕Al-O interface. Journal of Applied Physics, 100(11), Article 113903. https://doi.org/10.1063/1.2384806 bibtex: '@article{Schmalhorst_Sacher_Höink_Reiss_Hütten_Engel_Ehresmann_2006, title={Magnetic and chemical properties of Co[sub 2]MnSi thin films compared to the Co[sub 2]MnSi∕Al-O interface}, volume={100}, DOI={10.1063/1.2384806}, number={11113903}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Schmalhorst, J. and Sacher, Marc and Höink, V. and Reiss, G. and Hütten, A. and Engel, D. and Ehresmann, A.}, year={2006} }' chicago: Schmalhorst, J., Marc Sacher, V. Höink, G. Reiss, A. Hütten, D. Engel, and A. Ehresmann. “Magnetic and Chemical Properties of Co[Sub 2]MnSi Thin Films Compared to the Co[Sub 2]MnSi∕Al-O Interface.” Journal of Applied Physics 100, no. 11 (2006). https://doi.org/10.1063/1.2384806. ieee: 'J. Schmalhorst et al., “Magnetic and chemical properties of Co[sub 2]MnSi thin films compared to the Co[sub 2]MnSi∕Al-O interface,” Journal of Applied Physics, vol. 100, no. 11, Art. no. 113903, 2006, doi: 10.1063/1.2384806.' mla: Schmalhorst, J., et al. “Magnetic and Chemical Properties of Co[Sub 2]MnSi Thin Films Compared to the Co[Sub 2]MnSi∕Al-O Interface.” Journal of Applied Physics, vol. 100, no. 11, 113903, AIP Publishing, 2006, doi:10.1063/1.2384806. short: J. Schmalhorst, M. Sacher, V. Höink, G. Reiss, A. Hütten, D. Engel, A. Ehresmann, Journal of Applied Physics 100 (2006). date_created: 2022-01-31T10:14:42Z date_updated: 2022-01-31T10:15:05Z department: - _id: '15' - _id: '576' doi: 10.1063/1.2384806 extern: '1' intvolume: ' 100' issue: '11' keyword: - General Physics and Astronomy language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 publication_status: published publisher: AIP Publishing status: public title: Magnetic and chemical properties of Co[sub 2]MnSi thin films compared to the Co[sub 2]MnSi∕Al-O interface type: journal_article user_id: '26883' volume: 100 year: '2006' ... --- _id: '39761' article_number: '113101' author: - first_name: Lutz full_name: Paelke, Lutz last_name: Paelke - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Paelke L, Kitzerow H-S. Space charge field and dynamics of the grating formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane. Journal of Applied Physics. 2006;100(11). doi:10.1063/1.2372434 apa: Paelke, L., & Kitzerow, H.-S. (2006). Space charge field and dynamics of the grating formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane. Journal of Applied Physics, 100(11), Article 113101. https://doi.org/10.1063/1.2372434 bibtex: '@article{Paelke_Kitzerow_2006, title={Space charge field and dynamics of the grating formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane}, volume={100}, DOI={10.1063/1.2372434}, number={11113101}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Paelke, Lutz and Kitzerow, Heinz-Siegfried}, year={2006} }' chicago: Paelke, Lutz, and Heinz-Siegfried Kitzerow. “Space Charge Field and Dynamics of the Grating Formation in a Photorefractive Polymer-Dispersed Liquid Crystal Based on a Photoconducting Polysiloxane.” Journal of Applied Physics 100, no. 11 (2006). https://doi.org/10.1063/1.2372434. ieee: 'L. Paelke and H.-S. Kitzerow, “Space charge field and dynamics of the grating formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane,” Journal of Applied Physics, vol. 100, no. 11, Art. no. 113101, 2006, doi: 10.1063/1.2372434.' mla: Paelke, Lutz, and Heinz-Siegfried Kitzerow. “Space Charge Field and Dynamics of the Grating Formation in a Photorefractive Polymer-Dispersed Liquid Crystal Based on a Photoconducting Polysiloxane.” Journal of Applied Physics, vol. 100, no. 11, 113101, AIP Publishing, 2006, doi:10.1063/1.2372434. short: L. Paelke, H.-S. Kitzerow, Journal of Applied Physics 100 (2006). date_created: 2023-01-24T19:08:50Z date_updated: 2023-01-24T19:09:08Z department: - _id: '313' - _id: '638' doi: 10.1063/1.2372434 intvolume: ' 100' issue: '11' keyword: - General Physics and Astronomy language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 publication_status: published publisher: AIP Publishing status: public title: Space charge field and dynamics of the grating formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane type: journal_article user_id: '254' volume: 100 year: '2006' ... --- _id: '7657' article_number: '084306' author: - first_name: Vasyl G. full_name: Kravets, Vasyl G. last_name: Kravets - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Denan full_name: Konjhodzic, Denan last_name: Konjhodzic - first_name: Axel full_name: Lorke, Axel last_name: Lorke - first_name: Hartmut full_name: Wiggers, Hartmut last_name: Wiggers citation: ama: Kravets VG, Meier C, Konjhodzic D, Lorke A, Wiggers H. Infrared properties of silicon nanoparticles. Journal of Applied Physics. 2005;97(8). doi:10.1063/1.1866475 apa: Kravets, V. G., Meier, C., Konjhodzic, D., Lorke, A., & Wiggers, H. (2005). Infrared properties of silicon nanoparticles. Journal of Applied Physics, 97(8). https://doi.org/10.1063/1.1866475 bibtex: '@article{Kravets_Meier_Konjhodzic_Lorke_Wiggers_2005, title={Infrared properties of silicon nanoparticles}, volume={97}, DOI={10.1063/1.1866475}, number={8084306}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kravets, Vasyl G. and Meier, Cedrik and Konjhodzic, Denan and Lorke, Axel and Wiggers, Hartmut}, year={2005} }' chicago: Kravets, Vasyl G., Cedrik Meier, Denan Konjhodzic, Axel Lorke, and Hartmut Wiggers. “Infrared Properties of Silicon Nanoparticles.” Journal of Applied Physics 97, no. 8 (2005). https://doi.org/10.1063/1.1866475. ieee: V. G. Kravets, C. Meier, D. Konjhodzic, A. Lorke, and H. Wiggers, “Infrared properties of silicon nanoparticles,” Journal of Applied Physics, vol. 97, no. 8, 2005. mla: Kravets, Vasyl G., et al. “Infrared Properties of Silicon Nanoparticles.” Journal of Applied Physics, vol. 97, no. 8, 084306, AIP Publishing, 2005, doi:10.1063/1.1866475. short: V.G. Kravets, C. Meier, D. Konjhodzic, A. Lorke, H. Wiggers, Journal of Applied Physics 97 (2005). date_created: 2019-02-13T11:51:22Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.1866475 extern: '1' intvolume: ' 97' issue: '8' language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Infrared properties of silicon nanoparticles type: journal_article user_id: '20798' volume: 97 year: '2005' ... --- _id: '29689' article_number: '123711' author: - first_name: J. full_name: Schmalhorst, J. last_name: Schmalhorst - first_name: Marc full_name: Sacher, Marc id: '26883' last_name: Sacher - first_name: A. full_name: Thomas, A. last_name: Thomas - first_name: H. full_name: Brückl, H. last_name: Brückl - first_name: G. full_name: Reiss, G. last_name: Reiss - first_name: K. full_name: Starke, K. last_name: Starke citation: ama: Schmalhorst J, Sacher M, Thomas A, Brückl H, Reiss G, Starke K. X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions. Journal of Applied Physics. 2005;97(12). doi:10.1063/1.1939086 apa: Schmalhorst, J., Sacher, M., Thomas, A., Brückl, H., Reiss, G., & Starke, K. (2005). X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions. Journal of Applied Physics, 97(12), Article 123711. https://doi.org/10.1063/1.1939086 bibtex: '@article{Schmalhorst_Sacher_Thomas_Brückl_Reiss_Starke_2005, title={X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions}, volume={97}, DOI={10.1063/1.1939086}, number={12123711}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Schmalhorst, J. and Sacher, Marc and Thomas, A. and Brückl, H. and Reiss, G. and Starke, K.}, year={2005} }' chicago: Schmalhorst, J., Marc Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke. “X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic Tunnel Junctions.” Journal of Applied Physics 97, no. 12 (2005). https://doi.org/10.1063/1.1939086. ieee: 'J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke, “X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions,” Journal of Applied Physics, vol. 97, no. 12, Art. no. 123711, 2005, doi: 10.1063/1.1939086.' mla: Schmalhorst, J., et al. “X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic Tunnel Junctions.” Journal of Applied Physics, vol. 97, no. 12, 123711, AIP Publishing, 2005, doi:10.1063/1.1939086. short: J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, K. Starke, Journal of Applied Physics 97 (2005). date_created: 2022-01-31T10:20:49Z date_updated: 2022-01-31T10:21:05Z department: - _id: '15' - _id: '576' doi: 10.1063/1.1939086 extern: '1' intvolume: ' 97' issue: '12' keyword: - General Physics and Astronomy language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions type: journal_article user_id: '26883' volume: 97 year: '2005' ... --- _id: '29688' article_number: '123711' author: - first_name: J. full_name: Schmalhorst, J. last_name: Schmalhorst - first_name: Marc full_name: Sacher, Marc id: '26883' last_name: Sacher - first_name: A. full_name: Thomas, A. last_name: Thomas - first_name: H. full_name: Brückl, H. last_name: Brückl - first_name: G. full_name: Reiss, G. last_name: Reiss - first_name: K. full_name: Starke, K. last_name: Starke citation: ama: Schmalhorst J, Sacher M, Thomas A, Brückl H, Reiss G, Starke K. X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions. Journal of Applied Physics. 2005;97(12). doi:10.1063/1.1939086 apa: Schmalhorst, J., Sacher, M., Thomas, A., Brückl, H., Reiss, G., & Starke, K. (2005). X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions. Journal of Applied Physics, 97(12), Article 123711. https://doi.org/10.1063/1.1939086 bibtex: '@article{Schmalhorst_Sacher_Thomas_Brückl_Reiss_Starke_2005, title={X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions}, volume={97}, DOI={10.1063/1.1939086}, number={12123711}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Schmalhorst, J. and Sacher, Marc and Thomas, A. and Brückl, H. and Reiss, G. and Starke, K.}, year={2005} }' chicago: Schmalhorst, J., Marc Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke. “X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic Tunnel Junctions.” Journal of Applied Physics 97, no. 12 (2005). https://doi.org/10.1063/1.1939086. ieee: 'J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke, “X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions,” Journal of Applied Physics, vol. 97, no. 12, Art. no. 123711, 2005, doi: 10.1063/1.1939086.' mla: Schmalhorst, J., et al. “X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic Tunnel Junctions.” Journal of Applied Physics, vol. 97, no. 12, 123711, AIP Publishing, 2005, doi:10.1063/1.1939086. short: J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, K. Starke, Journal of Applied Physics 97 (2005). date_created: 2022-01-31T10:19:13Z date_updated: 2022-01-31T10:19:34Z department: - _id: '15' - _id: '576' doi: 10.1063/1.1939086 extern: '1' intvolume: ' 97' issue: '12' keyword: - General Physics and Astronomy language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions type: journal_article user_id: '26883' volume: 97 year: '2005' ... --- _id: '29687' article_number: '103532' author: - first_name: Marc full_name: Sacher, Marc id: '26883' last_name: Sacher - first_name: J. full_name: Sauerwald, J. last_name: Sauerwald - first_name: J. full_name: Schmalhorst, J. last_name: Schmalhorst - first_name: G. full_name: Reiss, G. last_name: Reiss citation: ama: Sacher M, Sauerwald J, Schmalhorst J, Reiss G. Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions. Journal of Applied Physics. 2005;98(10). doi:10.1063/1.2134883 apa: Sacher, M., Sauerwald, J., Schmalhorst, J., & Reiss, G. (2005). Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions. Journal of Applied Physics, 98(10), Article 103532. https://doi.org/10.1063/1.2134883 bibtex: '@article{Sacher_Sauerwald_Schmalhorst_Reiss_2005, title={Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions}, volume={98}, DOI={10.1063/1.2134883}, number={10103532}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Sacher, Marc and Sauerwald, J. and Schmalhorst, J. and Reiss, G.}, year={2005} }' chicago: Sacher, Marc, J. Sauerwald, J. Schmalhorst, and G. Reiss. “Influence of Noble-Gas Ion Irradiation on Alumina Barrier of Magnetic Tunnel Junctions.” Journal of Applied Physics 98, no. 10 (2005). https://doi.org/10.1063/1.2134883. ieee: 'M. Sacher, J. Sauerwald, J. Schmalhorst, and G. Reiss, “Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions,” Journal of Applied Physics, vol. 98, no. 10, Art. no. 103532, 2005, doi: 10.1063/1.2134883.' mla: Sacher, Marc, et al. “Influence of Noble-Gas Ion Irradiation on Alumina Barrier of Magnetic Tunnel Junctions.” Journal of Applied Physics, vol. 98, no. 10, 103532, AIP Publishing, 2005, doi:10.1063/1.2134883. short: M. Sacher, J. Sauerwald, J. Schmalhorst, G. Reiss, Journal of Applied Physics 98 (2005). date_created: 2022-01-31T10:18:33Z date_updated: 2022-01-31T10:18:52Z department: - _id: '15' - _id: '576' doi: 10.1063/1.2134883 extern: '1' intvolume: ' 98' issue: '10' keyword: - General Physics and Astronomy language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions type: journal_article user_id: '26883' volume: 98 year: '2005' ... --- _id: '39770' article_number: '033519' author: - first_name: N. full_name: Stich, N. last_name: Stich - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Stich N, Kitzerow H-S. Superposition of patterns in cross-linked liquid crystals. Journal of Applied Physics. 2005;97(3). doi:10.1063/1.1832744 apa: Stich, N., & Kitzerow, H.-S. (2005). Superposition of patterns in cross-linked liquid crystals. Journal of Applied Physics, 97(3), Article 033519. https://doi.org/10.1063/1.1832744 bibtex: '@article{Stich_Kitzerow_2005, title={Superposition of patterns in cross-linked liquid crystals}, volume={97}, DOI={10.1063/1.1832744}, number={3033519}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Stich, N. and Kitzerow, Heinz-Siegfried}, year={2005} }' chicago: Stich, N., and Heinz-Siegfried Kitzerow. “Superposition of Patterns in Cross-Linked Liquid Crystals.” Journal of Applied Physics 97, no. 3 (2005). https://doi.org/10.1063/1.1832744. ieee: 'N. Stich and H.-S. Kitzerow, “Superposition of patterns in cross-linked liquid crystals,” Journal of Applied Physics, vol. 97, no. 3, Art. no. 033519, 2005, doi: 10.1063/1.1832744.' mla: Stich, N., and Heinz-Siegfried Kitzerow. “Superposition of Patterns in Cross-Linked Liquid Crystals.” Journal of Applied Physics, vol. 97, no. 3, 033519, AIP Publishing, 2005, doi:10.1063/1.1832744. short: N. Stich, H.-S. Kitzerow, Journal of Applied Physics 97 (2005). date_created: 2023-01-24T19:14:46Z date_updated: 2023-01-24T19:15:41Z department: - _id: '313' - _id: '638' doi: 10.1063/1.1832744 intvolume: ' 97' issue: '3' keyword: - General Physics and Astronomy language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Superposition of patterns in cross-linked liquid crystals type: journal_article user_id: '254' volume: 97 year: '2005' ... --- _id: '8706' author: - first_name: K. H. full_name: Schmidt, K. H. last_name: Schmidt - first_name: C. full_name: Bock, C. last_name: Bock - first_name: M. full_name: Versen, M. last_name: Versen - first_name: U. full_name: Kunze, U. last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Schmidt KH, Bock C, Versen M, Kunze U, Reuter D, Wieck AD. Capacitance and tunneling spectroscopy of InAs quantum dots. Journal of Applied Physics. 2004:5715-5721. doi:10.1063/1.1703827 apa: Schmidt, K. H., Bock, C., Versen, M., Kunze, U., Reuter, D., & Wieck, A. D. (2004). Capacitance and tunneling spectroscopy of InAs quantum dots. Journal of Applied Physics, 5715–5721. https://doi.org/10.1063/1.1703827 bibtex: '@article{Schmidt_Bock_Versen_Kunze_Reuter_Wieck_2004, title={Capacitance and tunneling spectroscopy of InAs quantum dots}, DOI={10.1063/1.1703827}, journal={Journal of Applied Physics}, author={Schmidt, K. H. and Bock, C. and Versen, M. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2004}, pages={5715–5721} }' chicago: Schmidt, K. H., C. Bock, M. Versen, U. Kunze, Dirk Reuter, and A. D. Wieck. “Capacitance and Tunneling Spectroscopy of InAs Quantum Dots.” Journal of Applied Physics, 2004, 5715–21. https://doi.org/10.1063/1.1703827. ieee: K. H. Schmidt, C. Bock, M. Versen, U. Kunze, D. Reuter, and A. D. Wieck, “Capacitance and tunneling spectroscopy of InAs quantum dots,” Journal of Applied Physics, pp. 5715–5721, 2004. mla: Schmidt, K. H., et al. “Capacitance and Tunneling Spectroscopy of InAs Quantum Dots.” Journal of Applied Physics, 2004, pp. 5715–21, doi:10.1063/1.1703827. short: K.H. Schmidt, C. Bock, M. Versen, U. Kunze, D. Reuter, A.D. Wieck, Journal of Applied Physics (2004) 5715–5721. date_created: 2019-03-27T12:14:53Z date_updated: 2022-01-06T07:03:59Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1703827 language: - iso: eng page: 5715-5721 publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: Capacitance and tunneling spectroscopy of InAs quantum dots type: journal_article user_id: '42514' year: '2004' ... --- _id: '29692' author: - first_name: T. full_name: Dimopoulos, T. last_name: Dimopoulos - first_name: G. full_name: Gieres, G. last_name: Gieres - first_name: J. full_name: Wecker, J. last_name: Wecker - first_name: N. full_name: Wiese, N. last_name: Wiese - first_name: Marc full_name: Sacher, Marc id: '26883' last_name: Sacher citation: ama: Dimopoulos T, Gieres G, Wecker J, Wiese N, Sacher M. Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes. Journal of Applied Physics. 2004;96(11):6382-6386. doi:10.1063/1.1808899 apa: Dimopoulos, T., Gieres, G., Wecker, J., Wiese, N., & Sacher, M. (2004). Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes. Journal of Applied Physics, 96(11), 6382–6386. https://doi.org/10.1063/1.1808899 bibtex: '@article{Dimopoulos_Gieres_Wecker_Wiese_Sacher_2004, title={Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes}, volume={96}, DOI={10.1063/1.1808899}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Dimopoulos, T. and Gieres, G. and Wecker, J. and Wiese, N. and Sacher, Marc}, year={2004}, pages={6382–6386} }' chicago: 'Dimopoulos, T., G. Gieres, J. Wecker, N. Wiese, and Marc Sacher. “Thermal Annealing of Junctions with Amorphous and Polycrystalline Ferromagnetic Electrodes.” Journal of Applied Physics 96, no. 11 (2004): 6382–86. https://doi.org/10.1063/1.1808899.' ieee: 'T. Dimopoulos, G. Gieres, J. Wecker, N. Wiese, and M. Sacher, “Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes,” Journal of Applied Physics, vol. 96, no. 11, pp. 6382–6386, 2004, doi: 10.1063/1.1808899.' mla: Dimopoulos, T., et al. “Thermal Annealing of Junctions with Amorphous and Polycrystalline Ferromagnetic Electrodes.” Journal of Applied Physics, vol. 96, no. 11, AIP Publishing, 2004, pp. 6382–86, doi:10.1063/1.1808899. short: T. Dimopoulos, G. Gieres, J. Wecker, N. Wiese, M. Sacher, Journal of Applied Physics 96 (2004) 6382–6386. date_created: 2022-01-31T10:23:21Z date_updated: 2022-01-31T10:23:40Z department: - _id: '15' - _id: '576' doi: 10.1063/1.1808899 intvolume: ' 96' issue: '11' keyword: - General Physics and Astronomy language: - iso: eng page: 6382-6386 publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes type: journal_article user_id: '26883' volume: 96 year: '2004' ... --- _id: '7681' author: - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Dirk full_name: Reuter, Dirk last_name: Reuter - first_name: Christof full_name: Riedesel, Christof last_name: Riedesel - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck citation: ama: Meier C, Reuter D, Riedesel C, Wieck AD. Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures. Journal of Applied Physics. 2003;93(10):6100-6106. doi:10.1063/1.1563032 apa: Meier, C., Reuter, D., Riedesel, C., & Wieck, A. D. (2003). Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures. Journal of Applied Physics, 93(10), 6100–6106. https://doi.org/10.1063/1.1563032 bibtex: '@article{Meier_Reuter_Riedesel_Wieck_2003, title={Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures}, volume={93}, DOI={10.1063/1.1563032}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Meier, Cedrik and Reuter, Dirk and Riedesel, Christof and Wieck, Andreas D.}, year={2003}, pages={6100–6106} }' chicago: 'Meier, Cedrik, Dirk Reuter, Christof Riedesel, and Andreas D. Wieck. “Fabrication of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor Heterostructures.” Journal of Applied Physics 93, no. 10 (2003): 6100–6106. https://doi.org/10.1063/1.1563032.' ieee: C. Meier, D. Reuter, C. Riedesel, and A. D. Wieck, “Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures,” Journal of Applied Physics, vol. 93, no. 10, pp. 6100–6106, 2003. mla: Meier, Cedrik, et al. “Fabrication of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor Heterostructures.” Journal of Applied Physics, vol. 93, no. 10, AIP Publishing, 2003, pp. 6100–06, doi:10.1063/1.1563032. short: C. Meier, D. Reuter, C. Riedesel, A.D. Wieck, Journal of Applied Physics 93 (2003) 6100–6106. date_created: 2019-02-13T14:49:57Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.1563032 extern: '1' intvolume: ' 93' issue: '10' language: - iso: eng page: 6100-6106 publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures type: journal_article user_id: '20798' volume: 93 year: '2003' ... --- _id: '8720' author: - first_name: Cedrik full_name: Meier, Cedrik last_name: Meier - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Christof full_name: Riedesel, Christof last_name: Riedesel - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck citation: ama: Meier C, Reuter D, Riedesel C, Wieck AD. Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures. Journal of Applied Physics. 2003:6100-6106. doi:10.1063/1.1563032 apa: Meier, C., Reuter, D., Riedesel, C., & Wieck, A. D. (2003). Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures. Journal of Applied Physics, 6100–6106. https://doi.org/10.1063/1.1563032 bibtex: '@article{Meier_Reuter_Riedesel_Wieck_2003, title={Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures}, DOI={10.1063/1.1563032}, journal={Journal of Applied Physics}, author={Meier, Cedrik and Reuter, Dirk and Riedesel, Christof and Wieck, Andreas D.}, year={2003}, pages={6100–6106} }' chicago: Meier, Cedrik, Dirk Reuter, Christof Riedesel, and Andreas D. Wieck. “Fabrication of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor Heterostructures.” Journal of Applied Physics, 2003, 6100–6106. https://doi.org/10.1063/1.1563032. ieee: C. Meier, D. Reuter, C. Riedesel, and A. D. Wieck, “Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures,” Journal of Applied Physics, pp. 6100–6106, 2003. mla: Meier, Cedrik, et al. “Fabrication of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor Heterostructures.” Journal of Applied Physics, 2003, pp. 6100–06, doi:10.1063/1.1563032. short: C. Meier, D. Reuter, C. Riedesel, A.D. Wieck, Journal of Applied Physics (2003) 6100–6106. date_created: 2019-03-28T14:54:53Z date_updated: 2022-01-06T07:03:59Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1563032 language: - iso: eng page: 6100-6106 publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures type: journal_article user_id: '42514' year: '2003' ...