---
_id: '7985'
article_number: '063902'
author:
- first_name: E.
full_name: Schuster, E.
last_name: Schuster
- first_name: R. A.
full_name: Brand, R. A.
last_name: Brand
- first_name: F.
full_name: Stromberg, F.
last_name: Stromberg
- first_name: A.
full_name: Ludwig, A.
last_name: Ludwig
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: S.
full_name: Hövel, S.
last_name: Hövel
- first_name: N. C.
full_name: Gerhardt, N. C.
last_name: Gerhardt
- first_name: M. R.
full_name: Hofmann, M. R.
last_name: Hofmann
- first_name: H.
full_name: Wende, H.
last_name: Wende
- first_name: W.
full_name: Keune, W.
last_name: Keune
citation:
ama: 'Schuster E, Brand RA, Stromberg F, et al. Epitaxial growth and interfacial
magnetism of spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light
emitting diode as a prototype system. Journal of Applied Physics. 2010;108(6).
doi:10.1063/1.3476265'
apa: 'Schuster, E., Brand, R. A., Stromberg, F., Ludwig, A., Reuter, D., Wieck,
A. D., … Keune, W. (2010). Epitaxial growth and interfacial magnetism of spin
aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode
as a prototype system. Journal of Applied Physics, 108(6). https://doi.org/10.1063/1.3476265'
bibtex: '@article{Schuster_Brand_Stromberg_Ludwig_Reuter_Wieck_Hövel_Gerhardt_Hofmann_Wende_et
al._2010, title={Epitaxial growth and interfacial magnetism of spin aligner for
remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype
system}, volume={108}, DOI={10.1063/1.3476265},
number={6063902}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Schuster, E. and Brand, R. A. and Stromberg, F. and Ludwig, A. and Reuter,
Dirk and Wieck, A. D. and Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and
Wende, H. and et al.}, year={2010} }'
chicago: 'Schuster, E., R. A. Brand, F. Stromberg, A. Ludwig, Dirk Reuter, A. D.
Wieck, S. Hövel, et al. “Epitaxial Growth and Interfacial Magnetism of Spin Aligner
for Remanent Spin Injection: [Fe/Tb]n/Fe/MgO/GaAs-Light Emitting Diode as a Prototype
System.” Journal of Applied Physics 108, no. 6 (2010). https://doi.org/10.1063/1.3476265.'
ieee: 'E. Schuster et al., “Epitaxial growth and interfacial magnetism of
spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting
diode as a prototype system,” Journal of Applied Physics, vol. 108, no.
6, 2010.'
mla: 'Schuster, E., et al. “Epitaxial Growth and Interfacial Magnetism of Spin Aligner
for Remanent Spin Injection: [Fe/Tb]n/Fe/MgO/GaAs-Light Emitting Diode as a Prototype
System.” Journal of Applied Physics, vol. 108, no. 6, 063902, AIP Publishing,
2010, doi:10.1063/1.3476265.'
short: E. Schuster, R.A. Brand, F. Stromberg, A. Ludwig, D. Reuter, A.D. Wieck,
S. Hövel, N.C. Gerhardt, M.R. Hofmann, H. Wende, W. Keune, Journal of Applied
Physics 108 (2010).
date_created: 2019-02-21T14:37:35Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3476265
intvolume: ' 108'
issue: '6'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: 'Epitaxial growth and interfacial magnetism of spin aligner for remanent spin
injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype system'
type: journal_article
user_id: '42514'
volume: 108
year: '2010'
...
---
_id: '4202'
abstract:
- lang: eng
text: "Unintentional doping in nonpolar a-plane \x01112¯0\x02 gallium nitride \x01GaN\x02
grown on r-plane \x0111¯02\x02\r\nsapphire using a three-dimensional \x013D\x02–two-dimensional
\x012D\x02 growth method has been\r\ncharacterized. For both 2D only and 3D–2D
growth, the presence of an unintentionally doped region\r\nadjacent to the GaN/sapphire
interface is observed by scanning capacitance microscopy \x01SCM\x02. The\r\naverage
width of this unintentionally doped layer is found to increase with increasing
3D growth\r\ntime. By using an intentionally doped GaN:Si staircase structure
for calibration, it is shown that the\r\nunintentionally doped region has an average
carrier concentration of \x012.5\x010.3\x02\x021018 cm−3. SCM\r\nalso reveals
the presence of unintentionally doped features extending at 60° from the GaN/sapphire\r\ninterface.
The observation of decreasing carrier concentration with distance from the GaN/sapphire\r\ninterface
along these features may suggest that the unintentional doping arises from oxygen\r\ndiffusion
from the sapphire substrate. Low temperature cathodoluminescence spectra reveal\r\nemission
peaks at 3.41 and 3.30 eV, which are believed to originate from basal plane stacking
faults\r\n\x01BSFs\x02 and prismatic stacking faults \x01PSFs\x02, respectively.
It is shown that the inclined features\r\nextending from the GaN/sapphire interface
exhibit both enhanced BSF and PSF emission. We\r\nsuggest that enhanced unintentional
doping occurs in regions around PSFs. Where BSFs intersect\r\nthis doped material
their emission is also enhanced due to reduced nonradiative recombination.\r\nTransmission
electron microscopy confirms the presence of PSFs extending through the film at
60°\r\nfrom the GaN/sapphire interface."
article_number: '023503'
article_type: original
author:
- first_name: Tongtong
full_name: Zhu, Tongtong
last_name: Zhu
- first_name: Carol F.
full_name: Johnston, Carol F.
last_name: Johnston
- first_name: Maik
full_name: Häberlen, Maik
last_name: Häberlen
- first_name: Menno J.
full_name: Kappers, Menno J.
last_name: Kappers
- first_name: Rachel A.
full_name: Oliver, Rachel A.
last_name: Oliver
citation:
ama: Zhu T, Johnston CF, Häberlen M, Kappers MJ, Oliver RA. Characterization of
unintentional doping in nonpolar GaN. Journal of Applied Physics. 2010;107(2).
doi:10.1063/1.3284944
apa: Zhu, T., Johnston, C. F., Häberlen, M., Kappers, M. J., & Oliver, R. A.
(2010). Characterization of unintentional doping in nonpolar GaN. Journal of
Applied Physics, 107(2). https://doi.org/10.1063/1.3284944
bibtex: '@article{Zhu_Johnston_Häberlen_Kappers_Oliver_2010, title={Characterization
of unintentional doping in nonpolar GaN}, volume={107}, DOI={10.1063/1.3284944},
number={2023503}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Zhu, Tongtong and Johnston, Carol F. and Häberlen, Maik and Kappers, Menno
J. and Oliver, Rachel A.}, year={2010} }'
chicago: Zhu, Tongtong, Carol F. Johnston, Maik Häberlen, Menno J. Kappers, and
Rachel A. Oliver. “Characterization of Unintentional Doping in Nonpolar GaN.”
Journal of Applied Physics 107, no. 2 (2010). https://doi.org/10.1063/1.3284944.
ieee: T. Zhu, C. F. Johnston, M. Häberlen, M. J. Kappers, and R. A. Oliver, “Characterization
of unintentional doping in nonpolar GaN,” Journal of Applied Physics, vol.
107, no. 2, 2010.
mla: Zhu, Tongtong, et al. “Characterization of Unintentional Doping in Nonpolar
GaN.” Journal of Applied Physics, vol. 107, no. 2, 023503, AIP Publishing,
2010, doi:10.1063/1.3284944.
short: T. Zhu, C.F. Johnston, M. Häberlen, M.J. Kappers, R.A. Oliver, Journal of
Applied Physics 107 (2010).
date_created: 2018-08-28T12:27:34Z
date_updated: 2022-01-06T07:00:34Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1063/1.3284944
extern: '1'
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:28:22Z
date_updated: 2018-08-28T12:28:22Z
file_id: '4203'
file_name: Characterization of unintentional doping in nonpolar GaN.pdf
file_size: 688753
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:28:22Z
has_accepted_license: '1'
intvolume: ' 107'
issue: '2'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Characterization of unintentional doping in nonpolar GaN
type: journal_article
user_id: '55706'
volume: 107
year: '2010'
...
---
_id: '4212'
abstract:
- lang: eng
text: "Low temperature cathodo- and photoluminescence has been performed on nonpolar
a-plane GaN films grown using epitaxial lateral overgrowth. In films overgrown
at a low V–III ratio, the emission spectrum is dominated by “yellow” and “blue”
luminescence bands, attributed to recombination at point defects or impurities.
The intensity of this emission is observed to decrease steadily across the window
region along the −c direction, possibly due to asymmetric diffusion of a point
defect/impurity species. When overgrown at a higher V–III ratio, the near band
edge and basal-plane stacking fault emission intensity increases by orders of
magnitude and a donor–acceptor pair band is observed. Using monochromatic cathodoluminescence
imaging, the various emission features are correlated with the microstructure
of the film. In particular, the peak energy of the basal-plane stacking fault
emission is seen to be blueshifted by \x0415 meV in the wing relative to the window
region, which may be related to the different strain states in the respective
regions."
article_number: '033523'
article_type: original
author:
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: T. J.
full_name: Badcock, T. J.
last_name: Badcock
- first_name: M. A.
full_name: Moram, M. A.
last_name: Moram
- first_name: J. L.
full_name: Hollander, J. L.
last_name: Hollander
- first_name: M. J.
full_name: Kappers, M. J.
last_name: Kappers
- first_name: P.
full_name: Dawson, P.
last_name: Dawson
- first_name: C. J.
full_name: Humphreys, C. J.
last_name: Humphreys
- first_name: R. A.
full_name: Oliver, R. A.
last_name: Oliver
citation:
ama: Häberlen M, Badcock TJ, Moram MA, et al. Low temperature photoluminescence
and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral
overgrowth. Journal of Applied Physics. 2010;108(3). doi:10.1063/1.3460641
apa: Häberlen, M., Badcock, T. J., Moram, M. A., Hollander, J. L., Kappers, M. J.,
Dawson, P., … Oliver, R. A. (2010). Low temperature photoluminescence and cathodoluminescence
studies of nonpolar GaN grown using epitaxial lateral overgrowth. Journal of
Applied Physics, 108(3). https://doi.org/10.1063/1.3460641
bibtex: '@article{Häberlen_Badcock_Moram_Hollander_Kappers_Dawson_Humphreys_Oliver_2010,
title={Low temperature photoluminescence and cathodoluminescence studies of nonpolar
GaN grown using epitaxial lateral overgrowth}, volume={108}, DOI={10.1063/1.3460641},
number={3033523}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Häberlen, M. and Badcock, T. J. and Moram, M. A. and Hollander, J. L.
and Kappers, M. J. and Dawson, P. and Humphreys, C. J. and Oliver, R. A.}, year={2010}
}'
chicago: Häberlen, M., T. J. Badcock, M. A. Moram, J. L. Hollander, M. J. Kappers,
P. Dawson, C. J. Humphreys, and R. A. Oliver. “Low Temperature Photoluminescence
and Cathodoluminescence Studies of Nonpolar GaN Grown Using Epitaxial Lateral
Overgrowth.” Journal of Applied Physics 108, no. 3 (2010). https://doi.org/10.1063/1.3460641.
ieee: M. Häberlen et al., “Low temperature photoluminescence and cathodoluminescence
studies of nonpolar GaN grown using epitaxial lateral overgrowth,” Journal
of Applied Physics, vol. 108, no. 3, 2010.
mla: Häberlen, M., et al. “Low Temperature Photoluminescence and Cathodoluminescence
Studies of Nonpolar GaN Grown Using Epitaxial Lateral Overgrowth.” Journal
of Applied Physics, vol. 108, no. 3, 033523, AIP Publishing, 2010, doi:10.1063/1.3460641.
short: M. Häberlen, T.J. Badcock, M.A. Moram, J.L. Hollander, M.J. Kappers, P. Dawson,
C.J. Humphreys, R.A. Oliver, Journal of Applied Physics 108 (2010).
date_created: 2018-08-28T12:46:49Z
date_updated: 2022-01-06T07:00:37Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1063/1.3460641
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:47:23Z
date_updated: 2018-08-28T12:47:23Z
file_id: '4213'
file_name: Low temperature photoluminescence and cathodoluminescence studies of
non-polar GaN grown using epitaxial lateral overgrowth.pdf
file_size: 2391054
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:47:23Z
has_accepted_license: '1'
intvolume: ' 108'
issue: '3'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Low temperature photoluminescence and cathodoluminescence studies of nonpolar
GaN grown using epitaxial lateral overgrowth
type: journal_article
user_id: '55706'
volume: 108
year: '2010'
...
---
_id: '39747'
article_number: '013540'
author:
- first_name: A.
full_name: Hoischen, A.
last_name: Hoischen
- first_name: S. A.
full_name: Benning, S. A.
last_name: Benning
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: 'Hoischen A, Benning SA, Kitzerow H-S. Electroconvection of liquid crystals:
Tool for fabricating modulated polymer surfaces. Journal of Applied Physics.
2009;105(1). doi:10.1063/1.3055398'
apa: 'Hoischen, A., Benning, S. A., & Kitzerow, H.-S. (2009). Electroconvection
of liquid crystals: Tool for fabricating modulated polymer surfaces. Journal
of Applied Physics, 105(1), Article 013540. https://doi.org/10.1063/1.3055398'
bibtex: '@article{Hoischen_Benning_Kitzerow_2009, title={Electroconvection of liquid
crystals: Tool for fabricating modulated polymer surfaces}, volume={105}, DOI={10.1063/1.3055398}, number={1013540},
journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Hoischen,
A. and Benning, S. A. and Kitzerow, Heinz-Siegfried}, year={2009} }'
chicago: 'Hoischen, A., S. A. Benning, and Heinz-Siegfried Kitzerow. “Electroconvection
of Liquid Crystals: Tool for Fabricating Modulated Polymer Surfaces.” Journal
of Applied Physics 105, no. 1 (2009). https://doi.org/10.1063/1.3055398.'
ieee: 'A. Hoischen, S. A. Benning, and H.-S. Kitzerow, “Electroconvection of liquid
crystals: Tool for fabricating modulated polymer surfaces,” Journal of Applied
Physics, vol. 105, no. 1, Art. no. 013540, 2009, doi: 10.1063/1.3055398.'
mla: 'Hoischen, A., et al. “Electroconvection of Liquid Crystals: Tool for Fabricating
Modulated Polymer Surfaces.” Journal of Applied Physics, vol. 105, no.
1, 013540, AIP Publishing, 2009, doi:10.1063/1.3055398.'
short: A. Hoischen, S.A. Benning, H.-S. Kitzerow, Journal of Applied Physics 105
(2009).
date_created: 2023-01-24T18:51:19Z
date_updated: 2023-01-24T18:51:47Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.3055398
intvolume: ' 105'
issue: '1'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: 'Electroconvection of liquid crystals: Tool for fabricating modulated polymer
surfaces'
type: journal_article
user_id: '254'
volume: 105
year: '2009'
...
---
_id: '7643'
article_number: '103112'
author:
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Andreas
full_name: Gondorf, Andreas
last_name: Gondorf
- first_name: Stephan
full_name: Lüttjohann, Stephan
last_name: Lüttjohann
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Hartmut
full_name: Wiggers, Hartmut
last_name: Wiggers
citation:
ama: 'Meier C, Gondorf A, Lüttjohann S, Lorke A, Wiggers H. Silicon nanoparticles:
Absorption, emission, and the nature of the electronic bandgap. Journal of
Applied Physics. 2007;101(10). doi:10.1063/1.2720095'
apa: 'Meier, C., Gondorf, A., Lüttjohann, S., Lorke, A., & Wiggers, H. (2007).
Silicon nanoparticles: Absorption, emission, and the nature of the electronic
bandgap. Journal of Applied Physics, 101(10). https://doi.org/10.1063/1.2720095'
bibtex: '@article{Meier_Gondorf_Lüttjohann_Lorke_Wiggers_2007, title={Silicon nanoparticles:
Absorption, emission, and the nature of the electronic bandgap}, volume={101},
DOI={10.1063/1.2720095}, number={10103112},
journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Meier,
Cedrik and Gondorf, Andreas and Lüttjohann, Stephan and Lorke, Axel and Wiggers,
Hartmut}, year={2007} }'
chicago: 'Meier, Cedrik, Andreas Gondorf, Stephan Lüttjohann, Axel Lorke, and Hartmut
Wiggers. “Silicon Nanoparticles: Absorption, Emission, and the Nature of the Electronic
Bandgap.” Journal of Applied Physics 101, no. 10 (2007). https://doi.org/10.1063/1.2720095.'
ieee: 'C. Meier, A. Gondorf, S. Lüttjohann, A. Lorke, and H. Wiggers, “Silicon nanoparticles:
Absorption, emission, and the nature of the electronic bandgap,” Journal of
Applied Physics, vol. 101, no. 10, 2007.'
mla: 'Meier, Cedrik, et al. “Silicon Nanoparticles: Absorption, Emission, and the
Nature of the Electronic Bandgap.” Journal of Applied Physics, vol. 101,
no. 10, 103112, AIP Publishing, 2007, doi:10.1063/1.2720095.'
short: C. Meier, A. Gondorf, S. Lüttjohann, A. Lorke, H. Wiggers, Journal of Applied
Physics 101 (2007).
date_created: 2019-02-13T11:33:50Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2720095
extern: '1'
intvolume: ' 101'
issue: '10'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: 'Silicon nanoparticles: Absorption, emission, and the nature of the electronic
bandgap'
type: journal_article
user_id: '20798'
volume: 101
year: '2007'
...
---
_id: '7648'
article_number: '113108'
author:
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Stephan
full_name: Lüttjohann, Stephan
last_name: Lüttjohann
- first_name: Vasyl G.
full_name: Kravets, Vasyl G.
last_name: Kravets
- first_name: Hermann
full_name: Nienhaus, Hermann
last_name: Nienhaus
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Pascal
full_name: Ifeacho, Pascal
last_name: Ifeacho
- first_name: Hartmut
full_name: Wiggers, Hartmut
last_name: Wiggers
- first_name: Christof
full_name: Schulz, Christof
last_name: Schulz
- first_name: Marcus K.
full_name: Kennedy, Marcus K.
last_name: Kennedy
- first_name: F. Einar
full_name: Kruis, F. Einar
last_name: Kruis
citation:
ama: Meier C, Lüttjohann S, Kravets VG, et al. Vibrational and defect states in
SnOx nanoparticles. Journal of Applied Physics. 2006;99(11). doi:10.1063/1.2203408
apa: Meier, C., Lüttjohann, S., Kravets, V. G., Nienhaus, H., Lorke, A., Ifeacho,
P., … Kruis, F. E. (2006). Vibrational and defect states in SnOx nanoparticles.
Journal of Applied Physics, 99(11). https://doi.org/10.1063/1.2203408
bibtex: '@article{Meier_Lüttjohann_Kravets_Nienhaus_Lorke_Ifeacho_Wiggers_Schulz_Kennedy_Kruis_2006,
title={Vibrational and defect states in SnOx nanoparticles}, volume={99}, DOI={10.1063/1.2203408}, number={11113108},
journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Meier,
Cedrik and Lüttjohann, Stephan and Kravets, Vasyl G. and Nienhaus, Hermann and
Lorke, Axel and Ifeacho, Pascal and Wiggers, Hartmut and Schulz, Christof and
Kennedy, Marcus K. and Kruis, F. Einar}, year={2006} }'
chicago: Meier, Cedrik, Stephan Lüttjohann, Vasyl G. Kravets, Hermann Nienhaus,
Axel Lorke, Pascal Ifeacho, Hartmut Wiggers, Christof Schulz, Marcus K. Kennedy,
and F. Einar Kruis. “Vibrational and Defect States in SnOx Nanoparticles.” Journal
of Applied Physics 99, no. 11 (2006). https://doi.org/10.1063/1.2203408.
ieee: C. Meier et al., “Vibrational and defect states in SnOx nanoparticles,”
Journal of Applied Physics, vol. 99, no. 11, 2006.
mla: Meier, Cedrik, et al. “Vibrational and Defect States in SnOx Nanoparticles.”
Journal of Applied Physics, vol. 99, no. 11, 113108, AIP Publishing, 2006,
doi:10.1063/1.2203408.
short: C. Meier, S. Lüttjohann, V.G. Kravets, H. Nienhaus, A. Lorke, P. Ifeacho,
H. Wiggers, C. Schulz, M.K. Kennedy, F.E. Kruis, Journal of Applied Physics 99
(2006).
date_created: 2019-02-13T11:38:17Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2203408
extern: '1'
intvolume: ' 99'
issue: '11'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Vibrational and defect states in SnOx nanoparticles
type: journal_article
user_id: '20798'
volume: 99
year: '2006'
...
---
_id: '8651'
article_number: '073907'
author:
- first_name: N. C.
full_name: Gerhardt, N. C.
last_name: Gerhardt
- first_name: S.
full_name: Hövel, S.
last_name: Hövel
- first_name: C.
full_name: Brenner, C.
last_name: Brenner
- first_name: M. R.
full_name: Hofmann, M. R.
last_name: Hofmann
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: E.
full_name: Schuster, E.
last_name: Schuster
- first_name: W.
full_name: Keune, W.
last_name: Keune
- first_name: S.
full_name: Halm, S.
last_name: Halm
- first_name: G.
full_name: Bacher, G.
last_name: Bacher
- first_name: K.
full_name: Westerholt, K.
last_name: Westerholt
citation:
ama: Gerhardt NC, Hövel S, Brenner C, et al. Spin injection light-emitting diode
with vertically magnetized ferromagnetic metal contacts. Journal of Applied
Physics. 2006. doi:10.1063/1.2186376
apa: Gerhardt, N. C., Hövel, S., Brenner, C., Hofmann, M. R., Lo, F.-Y., Reuter,
D., … Westerholt, K. (2006). Spin injection light-emitting diode with vertically
magnetized ferromagnetic metal contacts. Journal of Applied Physics. https://doi.org/10.1063/1.2186376
bibtex: '@article{Gerhardt_Hövel_Brenner_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Halm_et
al._2006, title={Spin injection light-emitting diode with vertically magnetized
ferromagnetic metal contacts}, DOI={10.1063/1.2186376},
number={073907}, journal={Journal of Applied Physics}, author={Gerhardt, N. C.
and Hövel, S. and Brenner, C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk
and Wieck, A. D. and Schuster, E. and Keune, W. and Halm, S. and et al.}, year={2006}
}'
chicago: Gerhardt, N. C., S. Hövel, C. Brenner, M. R. Hofmann, F.-Y. Lo, Dirk Reuter,
A. D. Wieck, et al. “Spin Injection Light-Emitting Diode with Vertically Magnetized
Ferromagnetic Metal Contacts.” Journal of Applied Physics, 2006. https://doi.org/10.1063/1.2186376.
ieee: N. C. Gerhardt et al., “Spin injection light-emitting diode with vertically
magnetized ferromagnetic metal contacts,” Journal of Applied Physics, 2006.
mla: Gerhardt, N. C., et al. “Spin Injection Light-Emitting Diode with Vertically
Magnetized Ferromagnetic Metal Contacts.” Journal of Applied Physics, 073907,
2006, doi:10.1063/1.2186376.
short: N.C. Gerhardt, S. Hövel, C. Brenner, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D.
Wieck, E. Schuster, W. Keune, S. Halm, G. Bacher, K. Westerholt, Journal of Applied
Physics (2006).
date_created: 2019-03-27T07:57:04Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2186376
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: Spin injection light-emitting diode with vertically magnetized ferromagnetic
metal contacts
type: journal_article
user_id: '42514'
year: '2006'
...
---
_id: '29681'
article_number: '113903'
author:
- first_name: J.
full_name: Schmalhorst, J.
last_name: Schmalhorst
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
orcid: 0000-0001-6217-336X
- first_name: V.
full_name: Höink, V.
last_name: Höink
- first_name: G.
full_name: Reiss, G.
last_name: Reiss
- first_name: A.
full_name: Hütten, A.
last_name: Hütten
- first_name: D.
full_name: Engel, D.
last_name: Engel
- first_name: A.
full_name: Ehresmann, A.
last_name: Ehresmann
citation:
ama: Schmalhorst J, Sacher M, Höink V, et al. Magnetic and chemical properties
of Co[sub 2]MnSi thin films compared to the Co[sub 2]MnSi∕Al-O interface. Journal
of Applied Physics. 2006;100(11). doi:10.1063/1.2384806
apa: Schmalhorst, J., Sacher, M., Höink, V., Reiss, G., Hütten, A., Engel, D.,
& Ehresmann, A. (2006). Magnetic and chemical properties of Co[sub 2]MnSi
thin films compared to the Co[sub 2]MnSi∕Al-O interface. Journal of Applied
Physics, 100(11), Article 113903. https://doi.org/10.1063/1.2384806
bibtex: '@article{Schmalhorst_Sacher_Höink_Reiss_Hütten_Engel_Ehresmann_2006,
title={Magnetic and chemical properties of Co[sub 2]MnSi thin films compared to
the Co[sub 2]MnSi∕Al-O interface}, volume={100}, DOI={10.1063/1.2384806},
number={11113903}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Schmalhorst, J. and Sacher, Marc and Höink, V. and Reiss, G. and Hütten,
A. and Engel, D. and Ehresmann, A.}, year={2006} }'
chicago: Schmalhorst, J., Marc Sacher, V. Höink, G. Reiss, A. Hütten, D. Engel,
and A. Ehresmann. “Magnetic and Chemical Properties of Co[Sub 2]MnSi Thin Films
Compared to the Co[Sub 2]MnSi∕Al-O Interface.” Journal of Applied Physics
100, no. 11 (2006). https://doi.org/10.1063/1.2384806.
ieee: 'J. Schmalhorst et al., “Magnetic and chemical properties of Co[sub
2]MnSi thin films compared to the Co[sub 2]MnSi∕Al-O interface,” Journal of
Applied Physics, vol. 100, no. 11, Art. no. 113903, 2006, doi: 10.1063/1.2384806.'
mla: Schmalhorst, J., et al. “Magnetic and Chemical Properties of Co[Sub 2]MnSi
Thin Films Compared to the Co[Sub 2]MnSi∕Al-O Interface.” Journal of Applied
Physics, vol. 100, no. 11, 113903, AIP Publishing, 2006, doi:10.1063/1.2384806.
short: J. Schmalhorst, M. Sacher, V. Höink, G. Reiss, A. Hütten, D. Engel, A.
Ehresmann, Journal of Applied Physics 100 (2006).
date_created: 2022-01-31T10:14:42Z
date_updated: 2024-04-23T12:18:21Z
department:
- _id: '15'
doi: 10.1063/1.2384806
extern: '1'
intvolume: ' 100'
issue: '11'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
publication_status: published
publisher: AIP Publishing
status: public
title: Magnetic and chemical properties of Co[sub 2]MnSi thin films compared to the
Co[sub 2]MnSi∕Al-O interface
type: journal_article
user_id: '26883'
volume: 100
year: '2006'
...
---
_id: '29683'
article_number: '063903'
author:
- first_name: V.
full_name: Höink, V.
last_name: Höink
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
orcid: 0000-0001-6217-336X
- first_name: J.
full_name: Schmalhorst, J.
last_name: Schmalhorst
- first_name: G.
full_name: Reiss, G.
last_name: Reiss
- first_name: D.
full_name: Engel, D.
last_name: Engel
- first_name: T.
full_name: Weis, T.
last_name: Weis
- first_name: A.
full_name: Ehresmann, A.
last_name: Ehresmann
citation:
ama: Höink V, Sacher M, Schmalhorst J, et al. Switchable resonant x-ray Bragg scattering
on a magnetic grating patterned by ion bombardment. Journal of Applied Physics.
2006;100(6). doi:10.1063/1.2349568
apa: Höink, V., Sacher, M., Schmalhorst, J., Reiss, G., Engel, D., Weis, T., &
Ehresmann, A. (2006). Switchable resonant x-ray Bragg scattering on a magnetic
grating patterned by ion bombardment. Journal of Applied Physics, 100(6),
Article 063903. https://doi.org/10.1063/1.2349568
bibtex: '@article{Höink_Sacher_Schmalhorst_Reiss_Engel_Weis_Ehresmann_2006, title={Switchable
resonant x-ray Bragg scattering on a magnetic grating patterned by ion bombardment},
volume={100}, DOI={10.1063/1.2349568},
number={6063903}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Höink, V. and Sacher, Marc and Schmalhorst, J. and Reiss, G. and Engel,
D. and Weis, T. and Ehresmann, A.}, year={2006} }'
chicago: Höink, V., Marc Sacher, J. Schmalhorst, G. Reiss, D. Engel, T. Weis, and
A. Ehresmann. “Switchable Resonant X-Ray Bragg Scattering on a Magnetic Grating
Patterned by Ion Bombardment.” Journal of Applied Physics 100, no. 6 (2006).
https://doi.org/10.1063/1.2349568.
ieee: 'V. Höink et al., “Switchable resonant x-ray Bragg scattering on a
magnetic grating patterned by ion bombardment,” Journal of Applied Physics,
vol. 100, no. 6, Art. no. 063903, 2006, doi: 10.1063/1.2349568.'
mla: Höink, V., et al. “Switchable Resonant X-Ray Bragg Scattering on a Magnetic
Grating Patterned by Ion Bombardment.” Journal of Applied Physics, vol.
100, no. 6, 063903, AIP Publishing, 2006, doi:10.1063/1.2349568.
short: V. Höink, M. Sacher, J. Schmalhorst, G. Reiss, D. Engel, T. Weis, A. Ehresmann,
Journal of Applied Physics 100 (2006).
date_created: 2022-01-31T10:15:57Z
date_updated: 2024-04-23T12:18:12Z
department:
- _id: '15'
doi: 10.1063/1.2349568
extern: '1'
intvolume: ' 100'
issue: '6'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Switchable resonant x-ray Bragg scattering on a magnetic grating patterned
by ion bombardment
type: journal_article
user_id: '26883'
volume: 100
year: '2006'
...
---
_id: '39761'
article_number: '113101'
author:
- first_name: Lutz
full_name: Paelke, Lutz
last_name: Paelke
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Paelke L, Kitzerow H-S. Space charge field and dynamics of the grating formation
in a photorefractive polymer-dispersed liquid crystal based on a photoconducting
polysiloxane. Journal of Applied Physics. 2006;100(11). doi:10.1063/1.2372434
apa: Paelke, L., & Kitzerow, H.-S. (2006). Space charge field and dynamics of
the grating formation in a photorefractive polymer-dispersed liquid crystal based
on a photoconducting polysiloxane. Journal of Applied Physics, 100(11),
Article 113101. https://doi.org/10.1063/1.2372434
bibtex: '@article{Paelke_Kitzerow_2006, title={Space charge field and dynamics of
the grating formation in a photorefractive polymer-dispersed liquid crystal based
on a photoconducting polysiloxane}, volume={100}, DOI={10.1063/1.2372434},
number={11113101}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Paelke, Lutz and Kitzerow, Heinz-Siegfried}, year={2006} }'
chicago: Paelke, Lutz, and Heinz-Siegfried Kitzerow. “Space Charge Field and Dynamics
of the Grating Formation in a Photorefractive Polymer-Dispersed Liquid Crystal
Based on a Photoconducting Polysiloxane.” Journal of Applied Physics 100,
no. 11 (2006). https://doi.org/10.1063/1.2372434.
ieee: 'L. Paelke and H.-S. Kitzerow, “Space charge field and dynamics of the grating
formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting
polysiloxane,” Journal of Applied Physics, vol. 100, no. 11, Art. no. 113101,
2006, doi: 10.1063/1.2372434.'
mla: Paelke, Lutz, and Heinz-Siegfried Kitzerow. “Space Charge Field and Dynamics
of the Grating Formation in a Photorefractive Polymer-Dispersed Liquid Crystal
Based on a Photoconducting Polysiloxane.” Journal of Applied Physics, vol.
100, no. 11, 113101, AIP Publishing, 2006, doi:10.1063/1.2372434.
short: L. Paelke, H.-S. Kitzerow, Journal of Applied Physics 100 (2006).
date_created: 2023-01-24T19:08:50Z
date_updated: 2023-01-24T19:09:08Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.2372434
intvolume: ' 100'
issue: '11'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
publication_status: published
publisher: AIP Publishing
status: public
title: Space charge field and dynamics of the grating formation in a photorefractive
polymer-dispersed liquid crystal based on a photoconducting polysiloxane
type: journal_article
user_id: '254'
volume: 100
year: '2006'
...
---
_id: '7657'
article_number: '084306'
author:
- first_name: Vasyl G.
full_name: Kravets, Vasyl G.
last_name: Kravets
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Denan
full_name: Konjhodzic, Denan
last_name: Konjhodzic
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Hartmut
full_name: Wiggers, Hartmut
last_name: Wiggers
citation:
ama: Kravets VG, Meier C, Konjhodzic D, Lorke A, Wiggers H. Infrared properties
of silicon nanoparticles. Journal of Applied Physics. 2005;97(8). doi:10.1063/1.1866475
apa: Kravets, V. G., Meier, C., Konjhodzic, D., Lorke, A., & Wiggers, H. (2005).
Infrared properties of silicon nanoparticles. Journal of Applied Physics,
97(8). https://doi.org/10.1063/1.1866475
bibtex: '@article{Kravets_Meier_Konjhodzic_Lorke_Wiggers_2005, title={Infrared properties
of silicon nanoparticles}, volume={97}, DOI={10.1063/1.1866475},
number={8084306}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Kravets, Vasyl G. and Meier, Cedrik and Konjhodzic, Denan and Lorke, Axel
and Wiggers, Hartmut}, year={2005} }'
chicago: Kravets, Vasyl G., Cedrik Meier, Denan Konjhodzic, Axel Lorke, and Hartmut
Wiggers. “Infrared Properties of Silicon Nanoparticles.” Journal of Applied
Physics 97, no. 8 (2005). https://doi.org/10.1063/1.1866475.
ieee: V. G. Kravets, C. Meier, D. Konjhodzic, A. Lorke, and H. Wiggers, “Infrared
properties of silicon nanoparticles,” Journal of Applied Physics, vol.
97, no. 8, 2005.
mla: Kravets, Vasyl G., et al. “Infrared Properties of Silicon Nanoparticles.” Journal
of Applied Physics, vol. 97, no. 8, 084306, AIP Publishing, 2005, doi:10.1063/1.1866475.
short: V.G. Kravets, C. Meier, D. Konjhodzic, A. Lorke, H. Wiggers, Journal of Applied
Physics 97 (2005).
date_created: 2019-02-13T11:51:22Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1866475
extern: '1'
intvolume: ' 97'
issue: '8'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Infrared properties of silicon nanoparticles
type: journal_article
user_id: '20798'
volume: 97
year: '2005'
...
---
_id: '29689'
article_number: '123711'
author:
- first_name: J.
full_name: Schmalhorst, J.
last_name: Schmalhorst
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
orcid: 0000-0001-6217-336X
- first_name: A.
full_name: Thomas, A.
last_name: Thomas
- first_name: H.
full_name: Brückl, H.
last_name: Brückl
- first_name: G.
full_name: Reiss, G.
last_name: Reiss
- first_name: K.
full_name: Starke, K.
last_name: Starke
citation:
ama: Schmalhorst J, Sacher M, Thomas A, Brückl H, Reiss G, Starke K. X-ray absorption
and magnetic circular dichroism studies of annealed magnetic tunnel junctions.
Journal of Applied Physics. 2005;97(12). doi:10.1063/1.1939086
apa: Schmalhorst, J., Sacher, M., Thomas, A., Brückl, H., Reiss, G., & Starke,
K. (2005). X-ray absorption and magnetic circular dichroism studies of annealed
magnetic tunnel junctions. Journal of Applied Physics, 97(12), Article
123711. https://doi.org/10.1063/1.1939086
bibtex: '@article{Schmalhorst_Sacher_Thomas_Brückl_Reiss_Starke_2005, title={X-ray
absorption and magnetic circular dichroism studies of annealed magnetic tunnel
junctions}, volume={97}, DOI={10.1063/1.1939086},
number={12123711}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Schmalhorst, J. and Sacher, Marc and Thomas, A. and Brückl, H. and Reiss,
G. and Starke, K.}, year={2005} }'
chicago: Schmalhorst, J., Marc Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke.
“X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic
Tunnel Junctions.” Journal of Applied Physics 97, no. 12 (2005). https://doi.org/10.1063/1.1939086.
ieee: 'J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke,
“X-ray absorption and magnetic circular dichroism studies of annealed magnetic
tunnel junctions,” Journal of Applied Physics, vol. 97, no. 12, Art. no.
123711, 2005, doi: 10.1063/1.1939086.'
mla: Schmalhorst, J., et al. “X-Ray Absorption and Magnetic Circular Dichroism Studies
of Annealed Magnetic Tunnel Junctions.” Journal of Applied Physics, vol.
97, no. 12, 123711, AIP Publishing, 2005, doi:10.1063/1.1939086.
short: J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, K. Starke, Journal
of Applied Physics 97 (2005).
date_created: 2022-01-31T10:20:49Z
date_updated: 2024-04-23T12:17:13Z
department:
- _id: '15'
doi: 10.1063/1.1939086
extern: '1'
intvolume: ' 97'
issue: '12'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: X-ray absorption and magnetic circular dichroism studies of annealed magnetic
tunnel junctions
type: journal_article
user_id: '26883'
volume: 97
year: '2005'
...
---
_id: '29688'
article_number: '123711'
author:
- first_name: J.
full_name: Schmalhorst, J.
last_name: Schmalhorst
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
orcid: 0000-0001-6217-336X
- first_name: A.
full_name: Thomas, A.
last_name: Thomas
- first_name: H.
full_name: Brückl, H.
last_name: Brückl
- first_name: G.
full_name: Reiss, G.
last_name: Reiss
- first_name: K.
full_name: Starke, K.
last_name: Starke
citation:
ama: Schmalhorst J, Sacher M, Thomas A, Brückl H, Reiss G, Starke K. X-ray absorption
and magnetic circular dichroism studies of annealed magnetic tunnel junctions.
Journal of Applied Physics. 2005;97(12). doi:10.1063/1.1939086
apa: Schmalhorst, J., Sacher, M., Thomas, A., Brückl, H., Reiss, G., & Starke,
K. (2005). X-ray absorption and magnetic circular dichroism studies of annealed
magnetic tunnel junctions. Journal of Applied Physics, 97(12), Article
123711. https://doi.org/10.1063/1.1939086
bibtex: '@article{Schmalhorst_Sacher_Thomas_Brückl_Reiss_Starke_2005, title={X-ray
absorption and magnetic circular dichroism studies of annealed magnetic tunnel
junctions}, volume={97}, DOI={10.1063/1.1939086},
number={12123711}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Schmalhorst, J. and Sacher, Marc and Thomas, A. and Brückl, H. and Reiss,
G. and Starke, K.}, year={2005} }'
chicago: Schmalhorst, J., Marc Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke.
“X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic
Tunnel Junctions.” Journal of Applied Physics 97, no. 12 (2005). https://doi.org/10.1063/1.1939086.
ieee: 'J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke,
“X-ray absorption and magnetic circular dichroism studies of annealed magnetic
tunnel junctions,” Journal of Applied Physics, vol. 97, no. 12, Art. no.
123711, 2005, doi: 10.1063/1.1939086.'
mla: Schmalhorst, J., et al. “X-Ray Absorption and Magnetic Circular Dichroism Studies
of Annealed Magnetic Tunnel Junctions.” Journal of Applied Physics, vol.
97, no. 12, 123711, AIP Publishing, 2005, doi:10.1063/1.1939086.
short: J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, K. Starke, Journal
of Applied Physics 97 (2005).
date_created: 2022-01-31T10:19:13Z
date_updated: 2024-04-23T12:17:37Z
department:
- _id: '15'
doi: 10.1063/1.1939086
extern: '1'
intvolume: ' 97'
issue: '12'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: X-ray absorption and magnetic circular dichroism studies of annealed magnetic
tunnel junctions
type: journal_article
user_id: '26883'
volume: 97
year: '2005'
...
---
_id: '29687'
article_number: '103532'
author:
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
orcid: 0000-0001-6217-336X
- first_name: J.
full_name: Sauerwald, J.
last_name: Sauerwald
- first_name: J.
full_name: Schmalhorst, J.
last_name: Schmalhorst
- first_name: G.
full_name: Reiss, G.
last_name: Reiss
citation:
ama: Sacher M, Sauerwald J, Schmalhorst J, Reiss G. Influence of noble-gas ion irradiation
on alumina barrier of magnetic tunnel junctions. Journal of Applied Physics.
2005;98(10). doi:10.1063/1.2134883
apa: Sacher, M., Sauerwald, J., Schmalhorst, J., & Reiss, G. (2005). Influence
of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions.
Journal of Applied Physics, 98(10), Article 103532. https://doi.org/10.1063/1.2134883
bibtex: '@article{Sacher_Sauerwald_Schmalhorst_Reiss_2005, title={Influence of noble-gas
ion irradiation on alumina barrier of magnetic tunnel junctions}, volume={98},
DOI={10.1063/1.2134883}, number={10103532},
journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Sacher,
Marc and Sauerwald, J. and Schmalhorst, J. and Reiss, G.}, year={2005} }'
chicago: Sacher, Marc, J. Sauerwald, J. Schmalhorst, and G. Reiss. “Influence of
Noble-Gas Ion Irradiation on Alumina Barrier of Magnetic Tunnel Junctions.” Journal
of Applied Physics 98, no. 10 (2005). https://doi.org/10.1063/1.2134883.
ieee: 'M. Sacher, J. Sauerwald, J. Schmalhorst, and G. Reiss, “Influence of noble-gas
ion irradiation on alumina barrier of magnetic tunnel junctions,” Journal of
Applied Physics, vol. 98, no. 10, Art. no. 103532, 2005, doi: 10.1063/1.2134883.'
mla: Sacher, Marc, et al. “Influence of Noble-Gas Ion Irradiation on Alumina Barrier
of Magnetic Tunnel Junctions.” Journal of Applied Physics, vol. 98, no.
10, 103532, AIP Publishing, 2005, doi:10.1063/1.2134883.
short: M. Sacher, J. Sauerwald, J. Schmalhorst, G. Reiss, Journal of Applied Physics
98 (2005).
date_created: 2022-01-31T10:18:33Z
date_updated: 2024-04-23T12:17:22Z
department:
- _id: '15'
doi: 10.1063/1.2134883
extern: '1'
intvolume: ' 98'
issue: '10'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel
junctions
type: journal_article
user_id: '26883'
volume: 98
year: '2005'
...
---
_id: '39770'
article_number: '033519'
author:
- first_name: N.
full_name: Stich, N.
last_name: Stich
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Stich N, Kitzerow H-S. Superposition of patterns in cross-linked liquid crystals.
Journal of Applied Physics. 2005;97(3). doi:10.1063/1.1832744
apa: Stich, N., & Kitzerow, H.-S. (2005). Superposition of patterns in cross-linked
liquid crystals. Journal of Applied Physics, 97(3), Article 033519.
https://doi.org/10.1063/1.1832744
bibtex: '@article{Stich_Kitzerow_2005, title={Superposition of patterns in cross-linked
liquid crystals}, volume={97}, DOI={10.1063/1.1832744},
number={3033519}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Stich, N. and Kitzerow, Heinz-Siegfried}, year={2005} }'
chicago: Stich, N., and Heinz-Siegfried Kitzerow. “Superposition of Patterns in
Cross-Linked Liquid Crystals.” Journal of Applied Physics 97, no. 3 (2005).
https://doi.org/10.1063/1.1832744.
ieee: 'N. Stich and H.-S. Kitzerow, “Superposition of patterns in cross-linked liquid
crystals,” Journal of Applied Physics, vol. 97, no. 3, Art. no. 033519,
2005, doi: 10.1063/1.1832744.'
mla: Stich, N., and Heinz-Siegfried Kitzerow. “Superposition of Patterns in Cross-Linked
Liquid Crystals.” Journal of Applied Physics, vol. 97, no. 3, 033519, AIP
Publishing, 2005, doi:10.1063/1.1832744.
short: N. Stich, H.-S. Kitzerow, Journal of Applied Physics 97 (2005).
date_created: 2023-01-24T19:14:46Z
date_updated: 2023-01-24T19:15:41Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.1832744
intvolume: ' 97'
issue: '3'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Superposition of patterns in cross-linked liquid crystals
type: journal_article
user_id: '254'
volume: 97
year: '2005'
...
---
_id: '8706'
author:
- first_name: K. H.
full_name: Schmidt, K. H.
last_name: Schmidt
- first_name: C.
full_name: Bock, C.
last_name: Bock
- first_name: M.
full_name: Versen, M.
last_name: Versen
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Schmidt KH, Bock C, Versen M, Kunze U, Reuter D, Wieck AD. Capacitance and
tunneling spectroscopy of InAs quantum dots. Journal of Applied Physics.
2004:5715-5721. doi:10.1063/1.1703827
apa: Schmidt, K. H., Bock, C., Versen, M., Kunze, U., Reuter, D., & Wieck, A.
D. (2004). Capacitance and tunneling spectroscopy of InAs quantum dots. Journal
of Applied Physics, 5715–5721. https://doi.org/10.1063/1.1703827
bibtex: '@article{Schmidt_Bock_Versen_Kunze_Reuter_Wieck_2004, title={Capacitance
and tunneling spectroscopy of InAs quantum dots}, DOI={10.1063/1.1703827},
journal={Journal of Applied Physics}, author={Schmidt, K. H. and Bock, C. and
Versen, M. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2004}, pages={5715–5721}
}'
chicago: Schmidt, K. H., C. Bock, M. Versen, U. Kunze, Dirk Reuter, and A. D. Wieck.
“Capacitance and Tunneling Spectroscopy of InAs Quantum Dots.” Journal of Applied
Physics, 2004, 5715–21. https://doi.org/10.1063/1.1703827.
ieee: K. H. Schmidt, C. Bock, M. Versen, U. Kunze, D. Reuter, and A. D. Wieck, “Capacitance
and tunneling spectroscopy of InAs quantum dots,” Journal of Applied Physics,
pp. 5715–5721, 2004.
mla: Schmidt, K. H., et al. “Capacitance and Tunneling Spectroscopy of InAs Quantum
Dots.” Journal of Applied Physics, 2004, pp. 5715–21, doi:10.1063/1.1703827.
short: K.H. Schmidt, C. Bock, M. Versen, U. Kunze, D. Reuter, A.D. Wieck, Journal
of Applied Physics (2004) 5715–5721.
date_created: 2019-03-27T12:14:53Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1703827
language:
- iso: eng
page: 5715-5721
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: Capacitance and tunneling spectroscopy of InAs quantum dots
type: journal_article
user_id: '42514'
year: '2004'
...
---
_id: '29692'
author:
- first_name: T.
full_name: Dimopoulos, T.
last_name: Dimopoulos
- first_name: G.
full_name: Gieres, G.
last_name: Gieres
- first_name: J.
full_name: Wecker, J.
last_name: Wecker
- first_name: N.
full_name: Wiese, N.
last_name: Wiese
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
orcid: 0000-0001-6217-336X
citation:
ama: Dimopoulos T, Gieres G, Wecker J, Wiese N, Sacher M. Thermal annealing of junctions
with amorphous and polycrystalline ferromagnetic electrodes. Journal of Applied
Physics. 2004;96(11):6382-6386. doi:10.1063/1.1808899
apa: Dimopoulos, T., Gieres, G., Wecker, J., Wiese, N., & Sacher, M. (2004).
Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic
electrodes. Journal of Applied Physics, 96(11), 6382–6386. https://doi.org/10.1063/1.1808899
bibtex: '@article{Dimopoulos_Gieres_Wecker_Wiese_Sacher_2004, title={Thermal annealing
of junctions with amorphous and polycrystalline ferromagnetic electrodes}, volume={96},
DOI={10.1063/1.1808899}, number={11},
journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Dimopoulos,
T. and Gieres, G. and Wecker, J. and Wiese, N. and Sacher, Marc}, year={2004},
pages={6382–6386} }'
chicago: 'Dimopoulos, T., G. Gieres, J. Wecker, N. Wiese, and Marc Sacher. “Thermal
Annealing of Junctions with Amorphous and Polycrystalline Ferromagnetic Electrodes.”
Journal of Applied Physics 96, no. 11 (2004): 6382–86. https://doi.org/10.1063/1.1808899.'
ieee: 'T. Dimopoulos, G. Gieres, J. Wecker, N. Wiese, and M. Sacher, “Thermal annealing
of junctions with amorphous and polycrystalline ferromagnetic electrodes,” Journal
of Applied Physics, vol. 96, no. 11, pp. 6382–6386, 2004, doi: 10.1063/1.1808899.'
mla: Dimopoulos, T., et al. “Thermal Annealing of Junctions with Amorphous and Polycrystalline
Ferromagnetic Electrodes.” Journal of Applied Physics, vol. 96, no. 11,
AIP Publishing, 2004, pp. 6382–86, doi:10.1063/1.1808899.
short: T. Dimopoulos, G. Gieres, J. Wecker, N. Wiese, M. Sacher, Journal of Applied
Physics 96 (2004) 6382–6386.
date_created: 2022-01-31T10:23:21Z
date_updated: 2024-04-23T12:21:43Z
department:
- _id: '15'
doi: 10.1063/1.1808899
intvolume: ' 96'
issue: '11'
keyword:
- General Physics and Astronomy
language:
- iso: eng
page: 6382-6386
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic
electrodes
type: journal_article
user_id: '26883'
volume: 96
year: '2004'
...
---
_id: '7681'
author:
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Dirk
full_name: Reuter, Dirk
last_name: Reuter
- first_name: Christof
full_name: Riedesel, Christof
last_name: Riedesel
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Meier C, Reuter D, Riedesel C, Wieck AD. Fabrication of two-dimensional electron
systems by focused ion beam doping of III/V semiconductor heterostructures. Journal
of Applied Physics. 2003;93(10):6100-6106. doi:10.1063/1.1563032
apa: Meier, C., Reuter, D., Riedesel, C., & Wieck, A. D. (2003). Fabrication
of two-dimensional electron systems by focused ion beam doping of III/V semiconductor
heterostructures. Journal of Applied Physics, 93(10), 6100–6106.
https://doi.org/10.1063/1.1563032
bibtex: '@article{Meier_Reuter_Riedesel_Wieck_2003, title={Fabrication of two-dimensional
electron systems by focused ion beam doping of III/V semiconductor heterostructures},
volume={93}, DOI={10.1063/1.1563032},
number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Meier, Cedrik and Reuter, Dirk and Riedesel, Christof and Wieck, Andreas
D.}, year={2003}, pages={6100–6106} }'
chicago: 'Meier, Cedrik, Dirk Reuter, Christof Riedesel, and Andreas D. Wieck. “Fabrication
of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor
Heterostructures.” Journal of Applied Physics 93, no. 10 (2003): 6100–6106.
https://doi.org/10.1063/1.1563032.'
ieee: C. Meier, D. Reuter, C. Riedesel, and A. D. Wieck, “Fabrication of two-dimensional
electron systems by focused ion beam doping of III/V semiconductor heterostructures,”
Journal of Applied Physics, vol. 93, no. 10, pp. 6100–6106, 2003.
mla: Meier, Cedrik, et al. “Fabrication of Two-Dimensional Electron Systems by Focused
Ion Beam Doping of III/V Semiconductor Heterostructures.” Journal of Applied
Physics, vol. 93, no. 10, AIP Publishing, 2003, pp. 6100–06, doi:10.1063/1.1563032.
short: C. Meier, D. Reuter, C. Riedesel, A.D. Wieck, Journal of Applied Physics
93 (2003) 6100–6106.
date_created: 2019-02-13T14:49:57Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1563032
extern: '1'
intvolume: ' 93'
issue: '10'
language:
- iso: eng
page: 6100-6106
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Fabrication of two-dimensional electron systems by focused ion beam doping
of III/V semiconductor heterostructures
type: journal_article
user_id: '20798'
volume: 93
year: '2003'
...
---
_id: '8720'
author:
- first_name: Cedrik
full_name: Meier, Cedrik
last_name: Meier
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Christof
full_name: Riedesel, Christof
last_name: Riedesel
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Meier C, Reuter D, Riedesel C, Wieck AD. Fabrication of two-dimensional electron
systems by focused ion beam doping of III/V semiconductor heterostructures. Journal
of Applied Physics. 2003:6100-6106. doi:10.1063/1.1563032
apa: Meier, C., Reuter, D., Riedesel, C., & Wieck, A. D. (2003). Fabrication
of two-dimensional electron systems by focused ion beam doping of III/V semiconductor
heterostructures. Journal of Applied Physics, 6100–6106. https://doi.org/10.1063/1.1563032
bibtex: '@article{Meier_Reuter_Riedesel_Wieck_2003, title={Fabrication of two-dimensional
electron systems by focused ion beam doping of III/V semiconductor heterostructures},
DOI={10.1063/1.1563032}, journal={Journal
of Applied Physics}, author={Meier, Cedrik and Reuter, Dirk and Riedesel, Christof
and Wieck, Andreas D.}, year={2003}, pages={6100–6106} }'
chicago: Meier, Cedrik, Dirk Reuter, Christof Riedesel, and Andreas D. Wieck. “Fabrication
of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor
Heterostructures.” Journal of Applied Physics, 2003, 6100–6106. https://doi.org/10.1063/1.1563032.
ieee: C. Meier, D. Reuter, C. Riedesel, and A. D. Wieck, “Fabrication of two-dimensional
electron systems by focused ion beam doping of III/V semiconductor heterostructures,”
Journal of Applied Physics, pp. 6100–6106, 2003.
mla: Meier, Cedrik, et al. “Fabrication of Two-Dimensional Electron Systems by Focused
Ion Beam Doping of III/V Semiconductor Heterostructures.” Journal of Applied
Physics, 2003, pp. 6100–06, doi:10.1063/1.1563032.
short: C. Meier, D. Reuter, C. Riedesel, A.D. Wieck, Journal of Applied Physics
(2003) 6100–6106.
date_created: 2019-03-28T14:54:53Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1563032
language:
- iso: eng
page: 6100-6106
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: Fabrication of two-dimensional electron systems by focused ion beam doping
of III/V semiconductor heterostructures
type: journal_article
user_id: '42514'
year: '2003'
...
---
_id: '7685'
author:
- first_name: M.
full_name: Rahm, M.
last_name: Rahm
- first_name: J.
full_name: Raabe, J.
last_name: Raabe
- first_name: R.
full_name: Pulwey, R.
last_name: Pulwey
- first_name: J.
full_name: Biberger, J.
last_name: Biberger
- first_name: W.
full_name: Wegscheider, W.
last_name: Wegscheider
- first_name: D.
full_name: Weiss, D.
last_name: Weiss
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Rahm M, Raabe J, Pulwey R, et al. Planar Hall sensors for micro-Hall magnetometry.
Journal of Applied Physics. 2002;91(10):7980. doi:10.1063/1.1453338
apa: Rahm, M., Raabe, J., Pulwey, R., Biberger, J., Wegscheider, W., Weiss, D.,
& Meier, C. (2002). Planar Hall sensors for micro-Hall magnetometry. Journal
of Applied Physics, 91(10), 7980. https://doi.org/10.1063/1.1453338
bibtex: '@article{Rahm_Raabe_Pulwey_Biberger_Wegscheider_Weiss_Meier_2002, title={Planar
Hall sensors for micro-Hall magnetometry}, volume={91}, DOI={10.1063/1.1453338},
number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Rahm, M. and Raabe, J. and Pulwey, R. and Biberger, J. and Wegscheider,
W. and Weiss, D. and Meier, Cedrik}, year={2002}, pages={7980} }'
chicago: 'Rahm, M., J. Raabe, R. Pulwey, J. Biberger, W. Wegscheider, D. Weiss,
and Cedrik Meier. “Planar Hall Sensors for Micro-Hall Magnetometry.” Journal
of Applied Physics 91, no. 10 (2002): 7980. https://doi.org/10.1063/1.1453338.'
ieee: M. Rahm et al., “Planar Hall sensors for micro-Hall magnetometry,”
Journal of Applied Physics, vol. 91, no. 10, p. 7980, 2002.
mla: Rahm, M., et al. “Planar Hall Sensors for Micro-Hall Magnetometry.” Journal
of Applied Physics, vol. 91, no. 10, AIP Publishing, 2002, p. 7980, doi:10.1063/1.1453338.
short: M. Rahm, J. Raabe, R. Pulwey, J. Biberger, W. Wegscheider, D. Weiss, C. Meier,
Journal of Applied Physics 91 (2002) 7980.
date_created: 2019-02-13T14:52:58Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1453338
extern: '1'
intvolume: ' 91'
issue: '10'
language:
- iso: eng
page: '7980'
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
publication_status: published
publisher: AIP Publishing
status: public
title: Planar Hall sensors for micro-Hall magnetometry
type: journal_article
user_id: '20798'
volume: 91
year: '2002'
...