--- _id: '39761' article_number: '113101' author: - first_name: Lutz full_name: Paelke, Lutz last_name: Paelke - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Paelke L, Kitzerow H-S. Space charge field and dynamics of the grating formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane. Journal of Applied Physics. 2006;100(11). doi:10.1063/1.2372434 apa: Paelke, L., & Kitzerow, H.-S. (2006). Space charge field and dynamics of the grating formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane. Journal of Applied Physics, 100(11), Article 113101. https://doi.org/10.1063/1.2372434 bibtex: '@article{Paelke_Kitzerow_2006, title={Space charge field and dynamics of the grating formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane}, volume={100}, DOI={10.1063/1.2372434}, number={11113101}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Paelke, Lutz and Kitzerow, Heinz-Siegfried}, year={2006} }' chicago: Paelke, Lutz, and Heinz-Siegfried Kitzerow. “Space Charge Field and Dynamics of the Grating Formation in a Photorefractive Polymer-Dispersed Liquid Crystal Based on a Photoconducting Polysiloxane.” Journal of Applied Physics 100, no. 11 (2006). https://doi.org/10.1063/1.2372434. ieee: 'L. Paelke and H.-S. Kitzerow, “Space charge field and dynamics of the grating formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane,” Journal of Applied Physics, vol. 100, no. 11, Art. no. 113101, 2006, doi: 10.1063/1.2372434.' mla: Paelke, Lutz, and Heinz-Siegfried Kitzerow. “Space Charge Field and Dynamics of the Grating Formation in a Photorefractive Polymer-Dispersed Liquid Crystal Based on a Photoconducting Polysiloxane.” Journal of Applied Physics, vol. 100, no. 11, 113101, AIP Publishing, 2006, doi:10.1063/1.2372434. short: L. Paelke, H.-S. Kitzerow, Journal of Applied Physics 100 (2006). date_created: 2023-01-24T19:08:50Z date_updated: 2023-01-24T19:09:08Z department: - _id: '313' - _id: '638' doi: 10.1063/1.2372434 intvolume: ' 100' issue: '11' keyword: - General Physics and Astronomy language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 publication_status: published publisher: AIP Publishing status: public title: Space charge field and dynamics of the grating formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane type: journal_article user_id: '254' volume: 100 year: '2006' ... --- _id: '7657' article_number: '084306' author: - first_name: Vasyl G. full_name: Kravets, Vasyl G. last_name: Kravets - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Denan full_name: Konjhodzic, Denan last_name: Konjhodzic - first_name: Axel full_name: Lorke, Axel last_name: Lorke - first_name: Hartmut full_name: Wiggers, Hartmut last_name: Wiggers citation: ama: Kravets VG, Meier C, Konjhodzic D, Lorke A, Wiggers H. Infrared properties of silicon nanoparticles. Journal of Applied Physics. 2005;97(8). doi:10.1063/1.1866475 apa: Kravets, V. G., Meier, C., Konjhodzic, D., Lorke, A., & Wiggers, H. (2005). Infrared properties of silicon nanoparticles. Journal of Applied Physics, 97(8). https://doi.org/10.1063/1.1866475 bibtex: '@article{Kravets_Meier_Konjhodzic_Lorke_Wiggers_2005, title={Infrared properties of silicon nanoparticles}, volume={97}, DOI={10.1063/1.1866475}, number={8084306}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kravets, Vasyl G. and Meier, Cedrik and Konjhodzic, Denan and Lorke, Axel and Wiggers, Hartmut}, year={2005} }' chicago: Kravets, Vasyl G., Cedrik Meier, Denan Konjhodzic, Axel Lorke, and Hartmut Wiggers. “Infrared Properties of Silicon Nanoparticles.” Journal of Applied Physics 97, no. 8 (2005). https://doi.org/10.1063/1.1866475. ieee: V. G. Kravets, C. Meier, D. Konjhodzic, A. Lorke, and H. Wiggers, “Infrared properties of silicon nanoparticles,” Journal of Applied Physics, vol. 97, no. 8, 2005. mla: Kravets, Vasyl G., et al. “Infrared Properties of Silicon Nanoparticles.” Journal of Applied Physics, vol. 97, no. 8, 084306, AIP Publishing, 2005, doi:10.1063/1.1866475. short: V.G. Kravets, C. Meier, D. Konjhodzic, A. Lorke, H. Wiggers, Journal of Applied Physics 97 (2005). date_created: 2019-02-13T11:51:22Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.1866475 extern: '1' intvolume: ' 97' issue: '8' language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Infrared properties of silicon nanoparticles type: journal_article user_id: '20798' volume: 97 year: '2005' ... --- _id: '29689' article_number: '123711' author: - first_name: J. full_name: Schmalhorst, J. last_name: Schmalhorst - first_name: Marc full_name: Sacher, Marc id: '26883' last_name: Sacher - first_name: A. full_name: Thomas, A. last_name: Thomas - first_name: H. full_name: Brückl, H. last_name: Brückl - first_name: G. full_name: Reiss, G. last_name: Reiss - first_name: K. full_name: Starke, K. last_name: Starke citation: ama: Schmalhorst J, Sacher M, Thomas A, Brückl H, Reiss G, Starke K. X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions. Journal of Applied Physics. 2005;97(12). doi:10.1063/1.1939086 apa: Schmalhorst, J., Sacher, M., Thomas, A., Brückl, H., Reiss, G., & Starke, K. (2005). X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions. Journal of Applied Physics, 97(12), Article 123711. https://doi.org/10.1063/1.1939086 bibtex: '@article{Schmalhorst_Sacher_Thomas_Brückl_Reiss_Starke_2005, title={X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions}, volume={97}, DOI={10.1063/1.1939086}, number={12123711}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Schmalhorst, J. and Sacher, Marc and Thomas, A. and Brückl, H. and Reiss, G. and Starke, K.}, year={2005} }' chicago: Schmalhorst, J., Marc Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke. “X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic Tunnel Junctions.” Journal of Applied Physics 97, no. 12 (2005). https://doi.org/10.1063/1.1939086. ieee: 'J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke, “X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions,” Journal of Applied Physics, vol. 97, no. 12, Art. no. 123711, 2005, doi: 10.1063/1.1939086.' mla: Schmalhorst, J., et al. “X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic Tunnel Junctions.” Journal of Applied Physics, vol. 97, no. 12, 123711, AIP Publishing, 2005, doi:10.1063/1.1939086. short: J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, K. Starke, Journal of Applied Physics 97 (2005). date_created: 2022-01-31T10:20:49Z date_updated: 2022-01-31T10:21:05Z department: - _id: '15' - _id: '576' doi: 10.1063/1.1939086 extern: '1' intvolume: ' 97' issue: '12' keyword: - General Physics and Astronomy language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions type: journal_article user_id: '26883' volume: 97 year: '2005' ... --- _id: '29688' article_number: '123711' author: - first_name: J. full_name: Schmalhorst, J. last_name: Schmalhorst - first_name: Marc full_name: Sacher, Marc id: '26883' last_name: Sacher - first_name: A. full_name: Thomas, A. last_name: Thomas - first_name: H. full_name: Brückl, H. last_name: Brückl - first_name: G. full_name: Reiss, G. last_name: Reiss - first_name: K. full_name: Starke, K. last_name: Starke citation: ama: Schmalhorst J, Sacher M, Thomas A, Brückl H, Reiss G, Starke K. X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions. Journal of Applied Physics. 2005;97(12). doi:10.1063/1.1939086 apa: Schmalhorst, J., Sacher, M., Thomas, A., Brückl, H., Reiss, G., & Starke, K. (2005). X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions. Journal of Applied Physics, 97(12), Article 123711. https://doi.org/10.1063/1.1939086 bibtex: '@article{Schmalhorst_Sacher_Thomas_Brückl_Reiss_Starke_2005, title={X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions}, volume={97}, DOI={10.1063/1.1939086}, number={12123711}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Schmalhorst, J. and Sacher, Marc and Thomas, A. and Brückl, H. and Reiss, G. and Starke, K.}, year={2005} }' chicago: Schmalhorst, J., Marc Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke. “X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic Tunnel Junctions.” Journal of Applied Physics 97, no. 12 (2005). https://doi.org/10.1063/1.1939086. ieee: 'J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke, “X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions,” Journal of Applied Physics, vol. 97, no. 12, Art. no. 123711, 2005, doi: 10.1063/1.1939086.' mla: Schmalhorst, J., et al. “X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic Tunnel Junctions.” Journal of Applied Physics, vol. 97, no. 12, 123711, AIP Publishing, 2005, doi:10.1063/1.1939086. short: J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, K. Starke, Journal of Applied Physics 97 (2005). date_created: 2022-01-31T10:19:13Z date_updated: 2022-01-31T10:19:34Z department: - _id: '15' - _id: '576' doi: 10.1063/1.1939086 extern: '1' intvolume: ' 97' issue: '12' keyword: - General Physics and Astronomy language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: X-ray absorption and magnetic circular dichroism studies of annealed magnetic tunnel junctions type: journal_article user_id: '26883' volume: 97 year: '2005' ... --- _id: '29687' article_number: '103532' author: - first_name: Marc full_name: Sacher, Marc id: '26883' last_name: Sacher - first_name: J. full_name: Sauerwald, J. last_name: Sauerwald - first_name: J. full_name: Schmalhorst, J. last_name: Schmalhorst - first_name: G. full_name: Reiss, G. last_name: Reiss citation: ama: Sacher M, Sauerwald J, Schmalhorst J, Reiss G. Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions. Journal of Applied Physics. 2005;98(10). doi:10.1063/1.2134883 apa: Sacher, M., Sauerwald, J., Schmalhorst, J., & Reiss, G. (2005). Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions. Journal of Applied Physics, 98(10), Article 103532. https://doi.org/10.1063/1.2134883 bibtex: '@article{Sacher_Sauerwald_Schmalhorst_Reiss_2005, title={Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions}, volume={98}, DOI={10.1063/1.2134883}, number={10103532}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Sacher, Marc and Sauerwald, J. and Schmalhorst, J. and Reiss, G.}, year={2005} }' chicago: Sacher, Marc, J. Sauerwald, J. Schmalhorst, and G. Reiss. “Influence of Noble-Gas Ion Irradiation on Alumina Barrier of Magnetic Tunnel Junctions.” Journal of Applied Physics 98, no. 10 (2005). https://doi.org/10.1063/1.2134883. ieee: 'M. Sacher, J. Sauerwald, J. Schmalhorst, and G. Reiss, “Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions,” Journal of Applied Physics, vol. 98, no. 10, Art. no. 103532, 2005, doi: 10.1063/1.2134883.' mla: Sacher, Marc, et al. “Influence of Noble-Gas Ion Irradiation on Alumina Barrier of Magnetic Tunnel Junctions.” Journal of Applied Physics, vol. 98, no. 10, 103532, AIP Publishing, 2005, doi:10.1063/1.2134883. short: M. Sacher, J. Sauerwald, J. Schmalhorst, G. Reiss, Journal of Applied Physics 98 (2005). date_created: 2022-01-31T10:18:33Z date_updated: 2022-01-31T10:18:52Z department: - _id: '15' - _id: '576' doi: 10.1063/1.2134883 extern: '1' intvolume: ' 98' issue: '10' keyword: - General Physics and Astronomy language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions type: journal_article user_id: '26883' volume: 98 year: '2005' ... --- _id: '39770' article_number: '033519' author: - first_name: N. full_name: Stich, N. last_name: Stich - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Stich N, Kitzerow H-S. Superposition of patterns in cross-linked liquid crystals. Journal of Applied Physics. 2005;97(3). doi:10.1063/1.1832744 apa: Stich, N., & Kitzerow, H.-S. (2005). Superposition of patterns in cross-linked liquid crystals. Journal of Applied Physics, 97(3), Article 033519. https://doi.org/10.1063/1.1832744 bibtex: '@article{Stich_Kitzerow_2005, title={Superposition of patterns in cross-linked liquid crystals}, volume={97}, DOI={10.1063/1.1832744}, number={3033519}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Stich, N. and Kitzerow, Heinz-Siegfried}, year={2005} }' chicago: Stich, N., and Heinz-Siegfried Kitzerow. “Superposition of Patterns in Cross-Linked Liquid Crystals.” Journal of Applied Physics 97, no. 3 (2005). https://doi.org/10.1063/1.1832744. ieee: 'N. Stich and H.-S. Kitzerow, “Superposition of patterns in cross-linked liquid crystals,” Journal of Applied Physics, vol. 97, no. 3, Art. no. 033519, 2005, doi: 10.1063/1.1832744.' mla: Stich, N., and Heinz-Siegfried Kitzerow. “Superposition of Patterns in Cross-Linked Liquid Crystals.” Journal of Applied Physics, vol. 97, no. 3, 033519, AIP Publishing, 2005, doi:10.1063/1.1832744. short: N. Stich, H.-S. Kitzerow, Journal of Applied Physics 97 (2005). date_created: 2023-01-24T19:14:46Z date_updated: 2023-01-24T19:15:41Z department: - _id: '313' - _id: '638' doi: 10.1063/1.1832744 intvolume: ' 97' issue: '3' keyword: - General Physics and Astronomy language: - iso: eng publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Superposition of patterns in cross-linked liquid crystals type: journal_article user_id: '254' volume: 97 year: '2005' ... --- _id: '8706' author: - first_name: K. H. full_name: Schmidt, K. H. last_name: Schmidt - first_name: C. full_name: Bock, C. last_name: Bock - first_name: M. full_name: Versen, M. last_name: Versen - first_name: U. full_name: Kunze, U. last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Schmidt KH, Bock C, Versen M, Kunze U, Reuter D, Wieck AD. Capacitance and tunneling spectroscopy of InAs quantum dots. Journal of Applied Physics. 2004:5715-5721. doi:10.1063/1.1703827 apa: Schmidt, K. H., Bock, C., Versen, M., Kunze, U., Reuter, D., & Wieck, A. D. (2004). Capacitance and tunneling spectroscopy of InAs quantum dots. Journal of Applied Physics, 5715–5721. https://doi.org/10.1063/1.1703827 bibtex: '@article{Schmidt_Bock_Versen_Kunze_Reuter_Wieck_2004, title={Capacitance and tunneling spectroscopy of InAs quantum dots}, DOI={10.1063/1.1703827}, journal={Journal of Applied Physics}, author={Schmidt, K. H. and Bock, C. and Versen, M. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2004}, pages={5715–5721} }' chicago: Schmidt, K. H., C. Bock, M. Versen, U. Kunze, Dirk Reuter, and A. D. Wieck. “Capacitance and Tunneling Spectroscopy of InAs Quantum Dots.” Journal of Applied Physics, 2004, 5715–21. https://doi.org/10.1063/1.1703827. ieee: K. H. Schmidt, C. Bock, M. Versen, U. Kunze, D. Reuter, and A. D. Wieck, “Capacitance and tunneling spectroscopy of InAs quantum dots,” Journal of Applied Physics, pp. 5715–5721, 2004. mla: Schmidt, K. H., et al. “Capacitance and Tunneling Spectroscopy of InAs Quantum Dots.” Journal of Applied Physics, 2004, pp. 5715–21, doi:10.1063/1.1703827. short: K.H. Schmidt, C. Bock, M. Versen, U. Kunze, D. Reuter, A.D. Wieck, Journal of Applied Physics (2004) 5715–5721. date_created: 2019-03-27T12:14:53Z date_updated: 2022-01-06T07:03:59Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1703827 language: - iso: eng page: 5715-5721 publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: Capacitance and tunneling spectroscopy of InAs quantum dots type: journal_article user_id: '42514' year: '2004' ... --- _id: '29692' author: - first_name: T. full_name: Dimopoulos, T. last_name: Dimopoulos - first_name: G. full_name: Gieres, G. last_name: Gieres - first_name: J. full_name: Wecker, J. last_name: Wecker - first_name: N. full_name: Wiese, N. last_name: Wiese - first_name: Marc full_name: Sacher, Marc id: '26883' last_name: Sacher citation: ama: Dimopoulos T, Gieres G, Wecker J, Wiese N, Sacher M. Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes. Journal of Applied Physics. 2004;96(11):6382-6386. doi:10.1063/1.1808899 apa: Dimopoulos, T., Gieres, G., Wecker, J., Wiese, N., & Sacher, M. (2004). Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes. Journal of Applied Physics, 96(11), 6382–6386. https://doi.org/10.1063/1.1808899 bibtex: '@article{Dimopoulos_Gieres_Wecker_Wiese_Sacher_2004, title={Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes}, volume={96}, DOI={10.1063/1.1808899}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Dimopoulos, T. and Gieres, G. and Wecker, J. and Wiese, N. and Sacher, Marc}, year={2004}, pages={6382–6386} }' chicago: 'Dimopoulos, T., G. Gieres, J. Wecker, N. Wiese, and Marc Sacher. “Thermal Annealing of Junctions with Amorphous and Polycrystalline Ferromagnetic Electrodes.” Journal of Applied Physics 96, no. 11 (2004): 6382–86. https://doi.org/10.1063/1.1808899.' ieee: 'T. Dimopoulos, G. Gieres, J. Wecker, N. Wiese, and M. Sacher, “Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes,” Journal of Applied Physics, vol. 96, no. 11, pp. 6382–6386, 2004, doi: 10.1063/1.1808899.' mla: Dimopoulos, T., et al. “Thermal Annealing of Junctions with Amorphous and Polycrystalline Ferromagnetic Electrodes.” Journal of Applied Physics, vol. 96, no. 11, AIP Publishing, 2004, pp. 6382–86, doi:10.1063/1.1808899. short: T. Dimopoulos, G. Gieres, J. Wecker, N. Wiese, M. Sacher, Journal of Applied Physics 96 (2004) 6382–6386. date_created: 2022-01-31T10:23:21Z date_updated: 2022-01-31T10:23:40Z department: - _id: '15' - _id: '576' doi: 10.1063/1.1808899 intvolume: ' 96' issue: '11' keyword: - General Physics and Astronomy language: - iso: eng page: 6382-6386 publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes type: journal_article user_id: '26883' volume: 96 year: '2004' ... --- _id: '7681' author: - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Dirk full_name: Reuter, Dirk last_name: Reuter - first_name: Christof full_name: Riedesel, Christof last_name: Riedesel - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck citation: ama: Meier C, Reuter D, Riedesel C, Wieck AD. Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures. Journal of Applied Physics. 2003;93(10):6100-6106. doi:10.1063/1.1563032 apa: Meier, C., Reuter, D., Riedesel, C., & Wieck, A. D. (2003). Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures. Journal of Applied Physics, 93(10), 6100–6106. https://doi.org/10.1063/1.1563032 bibtex: '@article{Meier_Reuter_Riedesel_Wieck_2003, title={Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures}, volume={93}, DOI={10.1063/1.1563032}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Meier, Cedrik and Reuter, Dirk and Riedesel, Christof and Wieck, Andreas D.}, year={2003}, pages={6100–6106} }' chicago: 'Meier, Cedrik, Dirk Reuter, Christof Riedesel, and Andreas D. Wieck. “Fabrication of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor Heterostructures.” Journal of Applied Physics 93, no. 10 (2003): 6100–6106. https://doi.org/10.1063/1.1563032.' ieee: C. Meier, D. Reuter, C. Riedesel, and A. D. Wieck, “Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures,” Journal of Applied Physics, vol. 93, no. 10, pp. 6100–6106, 2003. mla: Meier, Cedrik, et al. “Fabrication of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor Heterostructures.” Journal of Applied Physics, vol. 93, no. 10, AIP Publishing, 2003, pp. 6100–06, doi:10.1063/1.1563032. short: C. Meier, D. Reuter, C. Riedesel, A.D. Wieck, Journal of Applied Physics 93 (2003) 6100–6106. date_created: 2019-02-13T14:49:57Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.1563032 extern: '1' intvolume: ' 93' issue: '10' language: - iso: eng page: 6100-6106 publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures type: journal_article user_id: '20798' volume: 93 year: '2003' ... --- _id: '8720' author: - first_name: Cedrik full_name: Meier, Cedrik last_name: Meier - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Christof full_name: Riedesel, Christof last_name: Riedesel - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck citation: ama: Meier C, Reuter D, Riedesel C, Wieck AD. Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures. Journal of Applied Physics. 2003:6100-6106. doi:10.1063/1.1563032 apa: Meier, C., Reuter, D., Riedesel, C., & Wieck, A. D. (2003). Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures. Journal of Applied Physics, 6100–6106. https://doi.org/10.1063/1.1563032 bibtex: '@article{Meier_Reuter_Riedesel_Wieck_2003, title={Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures}, DOI={10.1063/1.1563032}, journal={Journal of Applied Physics}, author={Meier, Cedrik and Reuter, Dirk and Riedesel, Christof and Wieck, Andreas D.}, year={2003}, pages={6100–6106} }' chicago: Meier, Cedrik, Dirk Reuter, Christof Riedesel, and Andreas D. Wieck. “Fabrication of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor Heterostructures.” Journal of Applied Physics, 2003, 6100–6106. https://doi.org/10.1063/1.1563032. ieee: C. Meier, D. Reuter, C. Riedesel, and A. D. Wieck, “Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures,” Journal of Applied Physics, pp. 6100–6106, 2003. mla: Meier, Cedrik, et al. “Fabrication of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor Heterostructures.” Journal of Applied Physics, 2003, pp. 6100–06, doi:10.1063/1.1563032. short: C. Meier, D. Reuter, C. Riedesel, A.D. Wieck, Journal of Applied Physics (2003) 6100–6106. date_created: 2019-03-28T14:54:53Z date_updated: 2022-01-06T07:03:59Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1563032 language: - iso: eng page: 6100-6106 publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: Fabrication of two-dimensional electron systems by focused ion beam doping of III/V semiconductor heterostructures type: journal_article user_id: '42514' year: '2003' ... --- _id: '7685' author: - first_name: M. full_name: Rahm, M. last_name: Rahm - first_name: J. full_name: Raabe, J. last_name: Raabe - first_name: R. full_name: Pulwey, R. last_name: Pulwey - first_name: J. full_name: Biberger, J. last_name: Biberger - first_name: W. full_name: Wegscheider, W. last_name: Wegscheider - first_name: D. full_name: Weiss, D. last_name: Weiss - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 citation: ama: Rahm M, Raabe J, Pulwey R, et al. Planar Hall sensors for micro-Hall magnetometry. Journal of Applied Physics. 2002;91(10):7980. doi:10.1063/1.1453338 apa: Rahm, M., Raabe, J., Pulwey, R., Biberger, J., Wegscheider, W., Weiss, D., & Meier, C. (2002). Planar Hall sensors for micro-Hall magnetometry. Journal of Applied Physics, 91(10), 7980. https://doi.org/10.1063/1.1453338 bibtex: '@article{Rahm_Raabe_Pulwey_Biberger_Wegscheider_Weiss_Meier_2002, title={Planar Hall sensors for micro-Hall magnetometry}, volume={91}, DOI={10.1063/1.1453338}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Rahm, M. and Raabe, J. and Pulwey, R. and Biberger, J. and Wegscheider, W. and Weiss, D. and Meier, Cedrik}, year={2002}, pages={7980} }' chicago: 'Rahm, M., J. Raabe, R. Pulwey, J. Biberger, W. Wegscheider, D. Weiss, and Cedrik Meier. “Planar Hall Sensors for Micro-Hall Magnetometry.” Journal of Applied Physics 91, no. 10 (2002): 7980. https://doi.org/10.1063/1.1453338.' ieee: M. Rahm et al., “Planar Hall sensors for micro-Hall magnetometry,” Journal of Applied Physics, vol. 91, no. 10, p. 7980, 2002. mla: Rahm, M., et al. “Planar Hall Sensors for Micro-Hall Magnetometry.” Journal of Applied Physics, vol. 91, no. 10, AIP Publishing, 2002, p. 7980, doi:10.1063/1.1453338. short: M. Rahm, J. Raabe, R. Pulwey, J. Biberger, W. Wegscheider, D. Weiss, C. Meier, Journal of Applied Physics 91 (2002) 7980. date_created: 2019-02-13T14:52:58Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.1453338 extern: '1' intvolume: ' 91' issue: '10' language: - iso: eng page: '7980' publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 publication_status: published publisher: AIP Publishing status: public title: Planar Hall sensors for micro-Hall magnetometry type: journal_article user_id: '20798' volume: 91 year: '2002' ... --- _id: '8763' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: M. full_name: Versen, M. last_name: Versen - first_name: M. D. full_name: Schneider, M. D. last_name: Schneider - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Reuter D, Versen M, Schneider MD, Wieck AD. Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities. Journal of Applied Physics. 2002:321-325. doi:10.1063/1.373660 apa: Reuter, D., Versen, M., Schneider, M. D., & Wieck, A. D. (2002). Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities. Journal of Applied Physics, 321–325. https://doi.org/10.1063/1.373660 bibtex: '@article{Reuter_Versen_Schneider_Wieck_2002, title={Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities}, DOI={10.1063/1.373660}, journal={Journal of Applied Physics}, author={Reuter, Dirk and Versen, M. and Schneider, M. D. and Wieck, A. D.}, year={2002}, pages={321–325} }' chicago: Reuter, Dirk, M. Versen, M. D. Schneider, and A. D. Wieck. “Increased Mobility Anisotropy in Selectively Doped AlxGa1−xAs/GaAs Heterostructures with High Electron Densities.” Journal of Applied Physics, 2002, 321–25. https://doi.org/10.1063/1.373660. ieee: D. Reuter, M. Versen, M. D. Schneider, and A. D. Wieck, “Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities,” Journal of Applied Physics, pp. 321–325, 2002. mla: Reuter, Dirk, et al. “Increased Mobility Anisotropy in Selectively Doped AlxGa1−xAs/GaAs Heterostructures with High Electron Densities.” Journal of Applied Physics, 2002, pp. 321–25, doi:10.1063/1.373660. short: D. Reuter, M. Versen, M.D. Schneider, A.D. Wieck, Journal of Applied Physics (2002) 321–325. date_created: 2019-04-01T07:33:21Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1063/1.373660 language: - iso: eng page: 321-325 publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities type: journal_article user_id: '42514' year: '2002' ... --- _id: '8788' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: G. full_name: Gerth, G. last_name: Gerth - first_name: J. full_name: Kirschner, J. last_name: Kirschner citation: ama: 'Reuter D, Gerth G, Kirschner J. Modifying diffusion anisotropies: Cap layer induced changes in spreading anisotropies. Journal of Applied Physics. 2002:5374-5377. doi:10.1063/1.366304' apa: 'Reuter, D., Gerth, G., & Kirschner, J. (2002). Modifying diffusion anisotropies: Cap layer induced changes in spreading anisotropies. Journal of Applied Physics, 5374–5377. https://doi.org/10.1063/1.366304' bibtex: '@article{Reuter_Gerth_Kirschner_2002, title={Modifying diffusion anisotropies: Cap layer induced changes in spreading anisotropies}, DOI={10.1063/1.366304}, journal={Journal of Applied Physics}, author={Reuter, Dirk and Gerth, G. and Kirschner, J.}, year={2002}, pages={5374–5377} }' chicago: 'Reuter, Dirk, G. Gerth, and J. Kirschner. “Modifying Diffusion Anisotropies: Cap Layer Induced Changes in Spreading Anisotropies.” Journal of Applied Physics, 2002, 5374–77. https://doi.org/10.1063/1.366304.' ieee: 'D. Reuter, G. Gerth, and J. Kirschner, “Modifying diffusion anisotropies: Cap layer induced changes in spreading anisotropies,” Journal of Applied Physics, pp. 5374–5377, 2002.' mla: 'Reuter, Dirk, et al. “Modifying Diffusion Anisotropies: Cap Layer Induced Changes in Spreading Anisotropies.” Journal of Applied Physics, 2002, pp. 5374–77, doi:10.1063/1.366304.' short: D. Reuter, G. Gerth, J. Kirschner, Journal of Applied Physics (2002) 5374–5377. date_created: 2019-04-01T08:43:12Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1063/1.366304 language: - iso: eng page: 5374-5377 publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published status: public title: 'Modifying diffusion anisotropies: Cap layer induced changes in spreading anisotropies' type: journal_article user_id: '42514' year: '2002' ... --- _id: '7693' author: - first_name: Soheyla full_name: Eshlaghi, Soheyla last_name: Eshlaghi - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Dieter full_name: Suter, Dieter last_name: Suter - first_name: D. full_name: Reuter, D. last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Eshlaghi S, Meier C, Suter D, Reuter D, Wieck AD. Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells. Journal of Applied Physics. 1999;86(11):6605-6607. doi:10.1063/1.371720 apa: Eshlaghi, S., Meier, C., Suter, D., Reuter, D., & Wieck, A. D. (1999). Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells. Journal of Applied Physics, 86(11), 6605–6607. https://doi.org/10.1063/1.371720 bibtex: '@article{Eshlaghi_Meier_Suter_Reuter_Wieck_1999, title={Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells}, volume={86}, DOI={10.1063/1.371720}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Eshlaghi, Soheyla and Meier, Cedrik and Suter, Dieter and Reuter, D. and Wieck, A. D.}, year={1999}, pages={6605–6607} }' chicago: 'Eshlaghi, Soheyla, Cedrik Meier, Dieter Suter, D. Reuter, and A. D. Wieck. “Depth Profile of the Implantation-Enhanced Intermixing of Ga+ Focused Ion Beam in AlAs/GaAs Quantum Wells.” Journal of Applied Physics 86, no. 11 (1999): 6605–7. https://doi.org/10.1063/1.371720.' ieee: S. Eshlaghi, C. Meier, D. Suter, D. Reuter, and A. D. Wieck, “Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells,” Journal of Applied Physics, vol. 86, no. 11, pp. 6605–6607, 1999. mla: Eshlaghi, Soheyla, et al. “Depth Profile of the Implantation-Enhanced Intermixing of Ga+ Focused Ion Beam in AlAs/GaAs Quantum Wells.” Journal of Applied Physics, vol. 86, no. 11, AIP Publishing, 1999, pp. 6605–07, doi:10.1063/1.371720. short: S. Eshlaghi, C. Meier, D. Suter, D. Reuter, A.D. Wieck, Journal of Applied Physics 86 (1999) 6605–6607. date_created: 2019-02-13T14:59:37Z date_updated: 2022-01-06T07:03:44Z department: - _id: '15' doi: 10.1063/1.371720 extern: '1' intvolume: ' 86' issue: '11' language: - iso: eng page: 6605-6607 publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells type: journal_article user_id: '20798' volume: 86 year: '1999' ... --- _id: '40322' author: - first_name: Henning full_name: Molsen, Henning last_name: Molsen - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Molsen H, Kitzerow H-S. Bistability in polymer‐dispersed ferroelectric liquid crystals. Journal of Applied Physics. 1994;75(2):710-716. doi:10.1063/1.356471 apa: Molsen, H., & Kitzerow, H.-S. (1994). Bistability in polymer‐dispersed ferroelectric liquid crystals. Journal of Applied Physics, 75(2), 710–716. https://doi.org/10.1063/1.356471 bibtex: '@article{Molsen_Kitzerow_1994, title={Bistability in polymer‐dispersed ferroelectric liquid crystals}, volume={75}, DOI={10.1063/1.356471}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Molsen, Henning and Kitzerow, Heinz-Siegfried}, year={1994}, pages={710–716} }' chicago: 'Molsen, Henning, and Heinz-Siegfried Kitzerow. “Bistability in Polymer‐dispersed Ferroelectric Liquid Crystals.” Journal of Applied Physics 75, no. 2 (1994): 710–16. https://doi.org/10.1063/1.356471.' ieee: 'H. Molsen and H.-S. Kitzerow, “Bistability in polymer‐dispersed ferroelectric liquid crystals,” Journal of Applied Physics, vol. 75, no. 2, pp. 710–716, 1994, doi: 10.1063/1.356471.' mla: Molsen, Henning, and Heinz-Siegfried Kitzerow. “Bistability in Polymer‐dispersed Ferroelectric Liquid Crystals.” Journal of Applied Physics, vol. 75, no. 2, AIP Publishing, 1994, pp. 710–16, doi:10.1063/1.356471. short: H. Molsen, H.-S. Kitzerow, Journal of Applied Physics 75 (1994) 710–716. date_created: 2023-01-26T11:06:23Z date_updated: 2023-01-26T11:49:09Z department: - _id: '313' doi: 10.1063/1.356471 extern: '1' intvolume: ' 75' issue: '2' keyword: - General Physics and Astronomy language: - iso: eng page: 710-716 publication: Journal of Applied Physics publication_identifier: issn: - 0021-8979 - 1089-7550 publication_status: published publisher: AIP Publishing status: public title: Bistability in polymer‐dispersed ferroelectric liquid crystals type: journal_article user_id: '254' volume: 75 year: '1994' ...