---
_id: '39761'
article_number: '113101'
author:
- first_name: Lutz
full_name: Paelke, Lutz
last_name: Paelke
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Paelke L, Kitzerow H-S. Space charge field and dynamics of the grating formation
in a photorefractive polymer-dispersed liquid crystal based on a photoconducting
polysiloxane. Journal of Applied Physics. 2006;100(11). doi:10.1063/1.2372434
apa: Paelke, L., & Kitzerow, H.-S. (2006). Space charge field and dynamics of
the grating formation in a photorefractive polymer-dispersed liquid crystal based
on a photoconducting polysiloxane. Journal of Applied Physics, 100(11),
Article 113101. https://doi.org/10.1063/1.2372434
bibtex: '@article{Paelke_Kitzerow_2006, title={Space charge field and dynamics of
the grating formation in a photorefractive polymer-dispersed liquid crystal based
on a photoconducting polysiloxane}, volume={100}, DOI={10.1063/1.2372434},
number={11113101}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Paelke, Lutz and Kitzerow, Heinz-Siegfried}, year={2006} }'
chicago: Paelke, Lutz, and Heinz-Siegfried Kitzerow. “Space Charge Field and Dynamics
of the Grating Formation in a Photorefractive Polymer-Dispersed Liquid Crystal
Based on a Photoconducting Polysiloxane.” Journal of Applied Physics 100,
no. 11 (2006). https://doi.org/10.1063/1.2372434.
ieee: 'L. Paelke and H.-S. Kitzerow, “Space charge field and dynamics of the grating
formation in a photorefractive polymer-dispersed liquid crystal based on a photoconducting
polysiloxane,” Journal of Applied Physics, vol. 100, no. 11, Art. no. 113101,
2006, doi: 10.1063/1.2372434.'
mla: Paelke, Lutz, and Heinz-Siegfried Kitzerow. “Space Charge Field and Dynamics
of the Grating Formation in a Photorefractive Polymer-Dispersed Liquid Crystal
Based on a Photoconducting Polysiloxane.” Journal of Applied Physics, vol.
100, no. 11, 113101, AIP Publishing, 2006, doi:10.1063/1.2372434.
short: L. Paelke, H.-S. Kitzerow, Journal of Applied Physics 100 (2006).
date_created: 2023-01-24T19:08:50Z
date_updated: 2023-01-24T19:09:08Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.2372434
intvolume: ' 100'
issue: '11'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
publication_status: published
publisher: AIP Publishing
status: public
title: Space charge field and dynamics of the grating formation in a photorefractive
polymer-dispersed liquid crystal based on a photoconducting polysiloxane
type: journal_article
user_id: '254'
volume: 100
year: '2006'
...
---
_id: '7657'
article_number: '084306'
author:
- first_name: Vasyl G.
full_name: Kravets, Vasyl G.
last_name: Kravets
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Denan
full_name: Konjhodzic, Denan
last_name: Konjhodzic
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Hartmut
full_name: Wiggers, Hartmut
last_name: Wiggers
citation:
ama: Kravets VG, Meier C, Konjhodzic D, Lorke A, Wiggers H. Infrared properties
of silicon nanoparticles. Journal of Applied Physics. 2005;97(8). doi:10.1063/1.1866475
apa: Kravets, V. G., Meier, C., Konjhodzic, D., Lorke, A., & Wiggers, H. (2005).
Infrared properties of silicon nanoparticles. Journal of Applied Physics,
97(8). https://doi.org/10.1063/1.1866475
bibtex: '@article{Kravets_Meier_Konjhodzic_Lorke_Wiggers_2005, title={Infrared properties
of silicon nanoparticles}, volume={97}, DOI={10.1063/1.1866475},
number={8084306}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Kravets, Vasyl G. and Meier, Cedrik and Konjhodzic, Denan and Lorke, Axel
and Wiggers, Hartmut}, year={2005} }'
chicago: Kravets, Vasyl G., Cedrik Meier, Denan Konjhodzic, Axel Lorke, and Hartmut
Wiggers. “Infrared Properties of Silicon Nanoparticles.” Journal of Applied
Physics 97, no. 8 (2005). https://doi.org/10.1063/1.1866475.
ieee: V. G. Kravets, C. Meier, D. Konjhodzic, A. Lorke, and H. Wiggers, “Infrared
properties of silicon nanoparticles,” Journal of Applied Physics, vol.
97, no. 8, 2005.
mla: Kravets, Vasyl G., et al. “Infrared Properties of Silicon Nanoparticles.” Journal
of Applied Physics, vol. 97, no. 8, 084306, AIP Publishing, 2005, doi:10.1063/1.1866475.
short: V.G. Kravets, C. Meier, D. Konjhodzic, A. Lorke, H. Wiggers, Journal of Applied
Physics 97 (2005).
date_created: 2019-02-13T11:51:22Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1866475
extern: '1'
intvolume: ' 97'
issue: '8'
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Infrared properties of silicon nanoparticles
type: journal_article
user_id: '20798'
volume: 97
year: '2005'
...
---
_id: '29689'
article_number: '123711'
author:
- first_name: J.
full_name: Schmalhorst, J.
last_name: Schmalhorst
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
- first_name: A.
full_name: Thomas, A.
last_name: Thomas
- first_name: H.
full_name: Brückl, H.
last_name: Brückl
- first_name: G.
full_name: Reiss, G.
last_name: Reiss
- first_name: K.
full_name: Starke, K.
last_name: Starke
citation:
ama: Schmalhorst J, Sacher M, Thomas A, Brückl H, Reiss G, Starke K. X-ray absorption
and magnetic circular dichroism studies of annealed magnetic tunnel junctions.
Journal of Applied Physics. 2005;97(12). doi:10.1063/1.1939086
apa: Schmalhorst, J., Sacher, M., Thomas, A., Brückl, H., Reiss, G., & Starke,
K. (2005). X-ray absorption and magnetic circular dichroism studies of annealed
magnetic tunnel junctions. Journal of Applied Physics, 97(12), Article
123711. https://doi.org/10.1063/1.1939086
bibtex: '@article{Schmalhorst_Sacher_Thomas_Brückl_Reiss_Starke_2005, title={X-ray
absorption and magnetic circular dichroism studies of annealed magnetic tunnel
junctions}, volume={97}, DOI={10.1063/1.1939086},
number={12123711}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Schmalhorst, J. and Sacher, Marc and Thomas, A. and Brückl, H. and Reiss,
G. and Starke, K.}, year={2005} }'
chicago: Schmalhorst, J., Marc Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke.
“X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic
Tunnel Junctions.” Journal of Applied Physics 97, no. 12 (2005). https://doi.org/10.1063/1.1939086.
ieee: 'J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke,
“X-ray absorption and magnetic circular dichroism studies of annealed magnetic
tunnel junctions,” Journal of Applied Physics, vol. 97, no. 12, Art. no.
123711, 2005, doi: 10.1063/1.1939086.'
mla: Schmalhorst, J., et al. “X-Ray Absorption and Magnetic Circular Dichroism Studies
of Annealed Magnetic Tunnel Junctions.” Journal of Applied Physics, vol.
97, no. 12, 123711, AIP Publishing, 2005, doi:10.1063/1.1939086.
short: J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, K. Starke, Journal
of Applied Physics 97 (2005).
date_created: 2022-01-31T10:20:49Z
date_updated: 2022-01-31T10:21:05Z
department:
- _id: '15'
- _id: '576'
doi: 10.1063/1.1939086
extern: '1'
intvolume: ' 97'
issue: '12'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: X-ray absorption and magnetic circular dichroism studies of annealed magnetic
tunnel junctions
type: journal_article
user_id: '26883'
volume: 97
year: '2005'
...
---
_id: '29688'
article_number: '123711'
author:
- first_name: J.
full_name: Schmalhorst, J.
last_name: Schmalhorst
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
- first_name: A.
full_name: Thomas, A.
last_name: Thomas
- first_name: H.
full_name: Brückl, H.
last_name: Brückl
- first_name: G.
full_name: Reiss, G.
last_name: Reiss
- first_name: K.
full_name: Starke, K.
last_name: Starke
citation:
ama: Schmalhorst J, Sacher M, Thomas A, Brückl H, Reiss G, Starke K. X-ray absorption
and magnetic circular dichroism studies of annealed magnetic tunnel junctions.
Journal of Applied Physics. 2005;97(12). doi:10.1063/1.1939086
apa: Schmalhorst, J., Sacher, M., Thomas, A., Brückl, H., Reiss, G., & Starke,
K. (2005). X-ray absorption and magnetic circular dichroism studies of annealed
magnetic tunnel junctions. Journal of Applied Physics, 97(12), Article
123711. https://doi.org/10.1063/1.1939086
bibtex: '@article{Schmalhorst_Sacher_Thomas_Brückl_Reiss_Starke_2005, title={X-ray
absorption and magnetic circular dichroism studies of annealed magnetic tunnel
junctions}, volume={97}, DOI={10.1063/1.1939086},
number={12123711}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Schmalhorst, J. and Sacher, Marc and Thomas, A. and Brückl, H. and Reiss,
G. and Starke, K.}, year={2005} }'
chicago: Schmalhorst, J., Marc Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke.
“X-Ray Absorption and Magnetic Circular Dichroism Studies of Annealed Magnetic
Tunnel Junctions.” Journal of Applied Physics 97, no. 12 (2005). https://doi.org/10.1063/1.1939086.
ieee: 'J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, and K. Starke,
“X-ray absorption and magnetic circular dichroism studies of annealed magnetic
tunnel junctions,” Journal of Applied Physics, vol. 97, no. 12, Art. no.
123711, 2005, doi: 10.1063/1.1939086.'
mla: Schmalhorst, J., et al. “X-Ray Absorption and Magnetic Circular Dichroism Studies
of Annealed Magnetic Tunnel Junctions.” Journal of Applied Physics, vol.
97, no. 12, 123711, AIP Publishing, 2005, doi:10.1063/1.1939086.
short: J. Schmalhorst, M. Sacher, A. Thomas, H. Brückl, G. Reiss, K. Starke, Journal
of Applied Physics 97 (2005).
date_created: 2022-01-31T10:19:13Z
date_updated: 2022-01-31T10:19:34Z
department:
- _id: '15'
- _id: '576'
doi: 10.1063/1.1939086
extern: '1'
intvolume: ' 97'
issue: '12'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: X-ray absorption and magnetic circular dichroism studies of annealed magnetic
tunnel junctions
type: journal_article
user_id: '26883'
volume: 97
year: '2005'
...
---
_id: '29687'
article_number: '103532'
author:
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
- first_name: J.
full_name: Sauerwald, J.
last_name: Sauerwald
- first_name: J.
full_name: Schmalhorst, J.
last_name: Schmalhorst
- first_name: G.
full_name: Reiss, G.
last_name: Reiss
citation:
ama: Sacher M, Sauerwald J, Schmalhorst J, Reiss G. Influence of noble-gas ion irradiation
on alumina barrier of magnetic tunnel junctions. Journal of Applied Physics.
2005;98(10). doi:10.1063/1.2134883
apa: Sacher, M., Sauerwald, J., Schmalhorst, J., & Reiss, G. (2005). Influence
of noble-gas ion irradiation on alumina barrier of magnetic tunnel junctions.
Journal of Applied Physics, 98(10), Article 103532. https://doi.org/10.1063/1.2134883
bibtex: '@article{Sacher_Sauerwald_Schmalhorst_Reiss_2005, title={Influence of noble-gas
ion irradiation on alumina barrier of magnetic tunnel junctions}, volume={98},
DOI={10.1063/1.2134883}, number={10103532},
journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Sacher,
Marc and Sauerwald, J. and Schmalhorst, J. and Reiss, G.}, year={2005} }'
chicago: Sacher, Marc, J. Sauerwald, J. Schmalhorst, and G. Reiss. “Influence of
Noble-Gas Ion Irradiation on Alumina Barrier of Magnetic Tunnel Junctions.” Journal
of Applied Physics 98, no. 10 (2005). https://doi.org/10.1063/1.2134883.
ieee: 'M. Sacher, J. Sauerwald, J. Schmalhorst, and G. Reiss, “Influence of noble-gas
ion irradiation on alumina barrier of magnetic tunnel junctions,” Journal of
Applied Physics, vol. 98, no. 10, Art. no. 103532, 2005, doi: 10.1063/1.2134883.'
mla: Sacher, Marc, et al. “Influence of Noble-Gas Ion Irradiation on Alumina Barrier
of Magnetic Tunnel Junctions.” Journal of Applied Physics, vol. 98, no.
10, 103532, AIP Publishing, 2005, doi:10.1063/1.2134883.
short: M. Sacher, J. Sauerwald, J. Schmalhorst, G. Reiss, Journal of Applied Physics
98 (2005).
date_created: 2022-01-31T10:18:33Z
date_updated: 2022-01-31T10:18:52Z
department:
- _id: '15'
- _id: '576'
doi: 10.1063/1.2134883
extern: '1'
intvolume: ' 98'
issue: '10'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Influence of noble-gas ion irradiation on alumina barrier of magnetic tunnel
junctions
type: journal_article
user_id: '26883'
volume: 98
year: '2005'
...
---
_id: '39770'
article_number: '033519'
author:
- first_name: N.
full_name: Stich, N.
last_name: Stich
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Stich N, Kitzerow H-S. Superposition of patterns in cross-linked liquid crystals.
Journal of Applied Physics. 2005;97(3). doi:10.1063/1.1832744
apa: Stich, N., & Kitzerow, H.-S. (2005). Superposition of patterns in cross-linked
liquid crystals. Journal of Applied Physics, 97(3), Article 033519.
https://doi.org/10.1063/1.1832744
bibtex: '@article{Stich_Kitzerow_2005, title={Superposition of patterns in cross-linked
liquid crystals}, volume={97}, DOI={10.1063/1.1832744},
number={3033519}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Stich, N. and Kitzerow, Heinz-Siegfried}, year={2005} }'
chicago: Stich, N., and Heinz-Siegfried Kitzerow. “Superposition of Patterns in
Cross-Linked Liquid Crystals.” Journal of Applied Physics 97, no. 3 (2005).
https://doi.org/10.1063/1.1832744.
ieee: 'N. Stich and H.-S. Kitzerow, “Superposition of patterns in cross-linked liquid
crystals,” Journal of Applied Physics, vol. 97, no. 3, Art. no. 033519,
2005, doi: 10.1063/1.1832744.'
mla: Stich, N., and Heinz-Siegfried Kitzerow. “Superposition of Patterns in Cross-Linked
Liquid Crystals.” Journal of Applied Physics, vol. 97, no. 3, 033519, AIP
Publishing, 2005, doi:10.1063/1.1832744.
short: N. Stich, H.-S. Kitzerow, Journal of Applied Physics 97 (2005).
date_created: 2023-01-24T19:14:46Z
date_updated: 2023-01-24T19:15:41Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.1832744
intvolume: ' 97'
issue: '3'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Superposition of patterns in cross-linked liquid crystals
type: journal_article
user_id: '254'
volume: 97
year: '2005'
...
---
_id: '8706'
author:
- first_name: K. H.
full_name: Schmidt, K. H.
last_name: Schmidt
- first_name: C.
full_name: Bock, C.
last_name: Bock
- first_name: M.
full_name: Versen, M.
last_name: Versen
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Schmidt KH, Bock C, Versen M, Kunze U, Reuter D, Wieck AD. Capacitance and
tunneling spectroscopy of InAs quantum dots. Journal of Applied Physics.
2004:5715-5721. doi:10.1063/1.1703827
apa: Schmidt, K. H., Bock, C., Versen, M., Kunze, U., Reuter, D., & Wieck, A.
D. (2004). Capacitance and tunneling spectroscopy of InAs quantum dots. Journal
of Applied Physics, 5715–5721. https://doi.org/10.1063/1.1703827
bibtex: '@article{Schmidt_Bock_Versen_Kunze_Reuter_Wieck_2004, title={Capacitance
and tunneling spectroscopy of InAs quantum dots}, DOI={10.1063/1.1703827},
journal={Journal of Applied Physics}, author={Schmidt, K. H. and Bock, C. and
Versen, M. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2004}, pages={5715–5721}
}'
chicago: Schmidt, K. H., C. Bock, M. Versen, U. Kunze, Dirk Reuter, and A. D. Wieck.
“Capacitance and Tunneling Spectroscopy of InAs Quantum Dots.” Journal of Applied
Physics, 2004, 5715–21. https://doi.org/10.1063/1.1703827.
ieee: K. H. Schmidt, C. Bock, M. Versen, U. Kunze, D. Reuter, and A. D. Wieck, “Capacitance
and tunneling spectroscopy of InAs quantum dots,” Journal of Applied Physics,
pp. 5715–5721, 2004.
mla: Schmidt, K. H., et al. “Capacitance and Tunneling Spectroscopy of InAs Quantum
Dots.” Journal of Applied Physics, 2004, pp. 5715–21, doi:10.1063/1.1703827.
short: K.H. Schmidt, C. Bock, M. Versen, U. Kunze, D. Reuter, A.D. Wieck, Journal
of Applied Physics (2004) 5715–5721.
date_created: 2019-03-27T12:14:53Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1703827
language:
- iso: eng
page: 5715-5721
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: Capacitance and tunneling spectroscopy of InAs quantum dots
type: journal_article
user_id: '42514'
year: '2004'
...
---
_id: '29692'
author:
- first_name: T.
full_name: Dimopoulos, T.
last_name: Dimopoulos
- first_name: G.
full_name: Gieres, G.
last_name: Gieres
- first_name: J.
full_name: Wecker, J.
last_name: Wecker
- first_name: N.
full_name: Wiese, N.
last_name: Wiese
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
citation:
ama: Dimopoulos T, Gieres G, Wecker J, Wiese N, Sacher M. Thermal annealing of junctions
with amorphous and polycrystalline ferromagnetic electrodes. Journal of Applied
Physics. 2004;96(11):6382-6386. doi:10.1063/1.1808899
apa: Dimopoulos, T., Gieres, G., Wecker, J., Wiese, N., & Sacher, M. (2004).
Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic
electrodes. Journal of Applied Physics, 96(11), 6382–6386. https://doi.org/10.1063/1.1808899
bibtex: '@article{Dimopoulos_Gieres_Wecker_Wiese_Sacher_2004, title={Thermal annealing
of junctions with amorphous and polycrystalline ferromagnetic electrodes}, volume={96},
DOI={10.1063/1.1808899}, number={11},
journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Dimopoulos,
T. and Gieres, G. and Wecker, J. and Wiese, N. and Sacher, Marc}, year={2004},
pages={6382–6386} }'
chicago: 'Dimopoulos, T., G. Gieres, J. Wecker, N. Wiese, and Marc Sacher. “Thermal
Annealing of Junctions with Amorphous and Polycrystalline Ferromagnetic Electrodes.”
Journal of Applied Physics 96, no. 11 (2004): 6382–86. https://doi.org/10.1063/1.1808899.'
ieee: 'T. Dimopoulos, G. Gieres, J. Wecker, N. Wiese, and M. Sacher, “Thermal annealing
of junctions with amorphous and polycrystalline ferromagnetic electrodes,” Journal
of Applied Physics, vol. 96, no. 11, pp. 6382–6386, 2004, doi: 10.1063/1.1808899.'
mla: Dimopoulos, T., et al. “Thermal Annealing of Junctions with Amorphous and Polycrystalline
Ferromagnetic Electrodes.” Journal of Applied Physics, vol. 96, no. 11,
AIP Publishing, 2004, pp. 6382–86, doi:10.1063/1.1808899.
short: T. Dimopoulos, G. Gieres, J. Wecker, N. Wiese, M. Sacher, Journal of Applied
Physics 96 (2004) 6382–6386.
date_created: 2022-01-31T10:23:21Z
date_updated: 2022-01-31T10:23:40Z
department:
- _id: '15'
- _id: '576'
doi: 10.1063/1.1808899
intvolume: ' 96'
issue: '11'
keyword:
- General Physics and Astronomy
language:
- iso: eng
page: 6382-6386
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic
electrodes
type: journal_article
user_id: '26883'
volume: 96
year: '2004'
...
---
_id: '7681'
author:
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Dirk
full_name: Reuter, Dirk
last_name: Reuter
- first_name: Christof
full_name: Riedesel, Christof
last_name: Riedesel
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Meier C, Reuter D, Riedesel C, Wieck AD. Fabrication of two-dimensional electron
systems by focused ion beam doping of III/V semiconductor heterostructures. Journal
of Applied Physics. 2003;93(10):6100-6106. doi:10.1063/1.1563032
apa: Meier, C., Reuter, D., Riedesel, C., & Wieck, A. D. (2003). Fabrication
of two-dimensional electron systems by focused ion beam doping of III/V semiconductor
heterostructures. Journal of Applied Physics, 93(10), 6100–6106.
https://doi.org/10.1063/1.1563032
bibtex: '@article{Meier_Reuter_Riedesel_Wieck_2003, title={Fabrication of two-dimensional
electron systems by focused ion beam doping of III/V semiconductor heterostructures},
volume={93}, DOI={10.1063/1.1563032},
number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Meier, Cedrik and Reuter, Dirk and Riedesel, Christof and Wieck, Andreas
D.}, year={2003}, pages={6100–6106} }'
chicago: 'Meier, Cedrik, Dirk Reuter, Christof Riedesel, and Andreas D. Wieck. “Fabrication
of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor
Heterostructures.” Journal of Applied Physics 93, no. 10 (2003): 6100–6106.
https://doi.org/10.1063/1.1563032.'
ieee: C. Meier, D. Reuter, C. Riedesel, and A. D. Wieck, “Fabrication of two-dimensional
electron systems by focused ion beam doping of III/V semiconductor heterostructures,”
Journal of Applied Physics, vol. 93, no. 10, pp. 6100–6106, 2003.
mla: Meier, Cedrik, et al. “Fabrication of Two-Dimensional Electron Systems by Focused
Ion Beam Doping of III/V Semiconductor Heterostructures.” Journal of Applied
Physics, vol. 93, no. 10, AIP Publishing, 2003, pp. 6100–06, doi:10.1063/1.1563032.
short: C. Meier, D. Reuter, C. Riedesel, A.D. Wieck, Journal of Applied Physics
93 (2003) 6100–6106.
date_created: 2019-02-13T14:49:57Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1563032
extern: '1'
intvolume: ' 93'
issue: '10'
language:
- iso: eng
page: 6100-6106
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Fabrication of two-dimensional electron systems by focused ion beam doping
of III/V semiconductor heterostructures
type: journal_article
user_id: '20798'
volume: 93
year: '2003'
...
---
_id: '8720'
author:
- first_name: Cedrik
full_name: Meier, Cedrik
last_name: Meier
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Christof
full_name: Riedesel, Christof
last_name: Riedesel
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Meier C, Reuter D, Riedesel C, Wieck AD. Fabrication of two-dimensional electron
systems by focused ion beam doping of III/V semiconductor heterostructures. Journal
of Applied Physics. 2003:6100-6106. doi:10.1063/1.1563032
apa: Meier, C., Reuter, D., Riedesel, C., & Wieck, A. D. (2003). Fabrication
of two-dimensional electron systems by focused ion beam doping of III/V semiconductor
heterostructures. Journal of Applied Physics, 6100–6106. https://doi.org/10.1063/1.1563032
bibtex: '@article{Meier_Reuter_Riedesel_Wieck_2003, title={Fabrication of two-dimensional
electron systems by focused ion beam doping of III/V semiconductor heterostructures},
DOI={10.1063/1.1563032}, journal={Journal
of Applied Physics}, author={Meier, Cedrik and Reuter, Dirk and Riedesel, Christof
and Wieck, Andreas D.}, year={2003}, pages={6100–6106} }'
chicago: Meier, Cedrik, Dirk Reuter, Christof Riedesel, and Andreas D. Wieck. “Fabrication
of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor
Heterostructures.” Journal of Applied Physics, 2003, 6100–6106. https://doi.org/10.1063/1.1563032.
ieee: C. Meier, D. Reuter, C. Riedesel, and A. D. Wieck, “Fabrication of two-dimensional
electron systems by focused ion beam doping of III/V semiconductor heterostructures,”
Journal of Applied Physics, pp. 6100–6106, 2003.
mla: Meier, Cedrik, et al. “Fabrication of Two-Dimensional Electron Systems by Focused
Ion Beam Doping of III/V Semiconductor Heterostructures.” Journal of Applied
Physics, 2003, pp. 6100–06, doi:10.1063/1.1563032.
short: C. Meier, D. Reuter, C. Riedesel, A.D. Wieck, Journal of Applied Physics
(2003) 6100–6106.
date_created: 2019-03-28T14:54:53Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1563032
language:
- iso: eng
page: 6100-6106
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: Fabrication of two-dimensional electron systems by focused ion beam doping
of III/V semiconductor heterostructures
type: journal_article
user_id: '42514'
year: '2003'
...
---
_id: '7685'
author:
- first_name: M.
full_name: Rahm, M.
last_name: Rahm
- first_name: J.
full_name: Raabe, J.
last_name: Raabe
- first_name: R.
full_name: Pulwey, R.
last_name: Pulwey
- first_name: J.
full_name: Biberger, J.
last_name: Biberger
- first_name: W.
full_name: Wegscheider, W.
last_name: Wegscheider
- first_name: D.
full_name: Weiss, D.
last_name: Weiss
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Rahm M, Raabe J, Pulwey R, et al. Planar Hall sensors for micro-Hall magnetometry.
Journal of Applied Physics. 2002;91(10):7980. doi:10.1063/1.1453338
apa: Rahm, M., Raabe, J., Pulwey, R., Biberger, J., Wegscheider, W., Weiss, D.,
& Meier, C. (2002). Planar Hall sensors for micro-Hall magnetometry. Journal
of Applied Physics, 91(10), 7980. https://doi.org/10.1063/1.1453338
bibtex: '@article{Rahm_Raabe_Pulwey_Biberger_Wegscheider_Weiss_Meier_2002, title={Planar
Hall sensors for micro-Hall magnetometry}, volume={91}, DOI={10.1063/1.1453338},
number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Rahm, M. and Raabe, J. and Pulwey, R. and Biberger, J. and Wegscheider,
W. and Weiss, D. and Meier, Cedrik}, year={2002}, pages={7980} }'
chicago: 'Rahm, M., J. Raabe, R. Pulwey, J. Biberger, W. Wegscheider, D. Weiss,
and Cedrik Meier. “Planar Hall Sensors for Micro-Hall Magnetometry.” Journal
of Applied Physics 91, no. 10 (2002): 7980. https://doi.org/10.1063/1.1453338.'
ieee: M. Rahm et al., “Planar Hall sensors for micro-Hall magnetometry,”
Journal of Applied Physics, vol. 91, no. 10, p. 7980, 2002.
mla: Rahm, M., et al. “Planar Hall Sensors for Micro-Hall Magnetometry.” Journal
of Applied Physics, vol. 91, no. 10, AIP Publishing, 2002, p. 7980, doi:10.1063/1.1453338.
short: M. Rahm, J. Raabe, R. Pulwey, J. Biberger, W. Wegscheider, D. Weiss, C. Meier,
Journal of Applied Physics 91 (2002) 7980.
date_created: 2019-02-13T14:52:58Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1453338
extern: '1'
intvolume: ' 91'
issue: '10'
language:
- iso: eng
page: '7980'
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
publication_status: published
publisher: AIP Publishing
status: public
title: Planar Hall sensors for micro-Hall magnetometry
type: journal_article
user_id: '20798'
volume: 91
year: '2002'
...
---
_id: '8763'
author:
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: M.
full_name: Versen, M.
last_name: Versen
- first_name: M. D.
full_name: Schneider, M. D.
last_name: Schneider
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Reuter D, Versen M, Schneider MD, Wieck AD. Increased mobility anisotropy in
selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities.
Journal of Applied Physics. 2002:321-325. doi:10.1063/1.373660
apa: Reuter, D., Versen, M., Schneider, M. D., & Wieck, A. D. (2002). Increased
mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with
high electron densities. Journal of Applied Physics, 321–325. https://doi.org/10.1063/1.373660
bibtex: '@article{Reuter_Versen_Schneider_Wieck_2002, title={Increased mobility
anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron
densities}, DOI={10.1063/1.373660},
journal={Journal of Applied Physics}, author={Reuter, Dirk and Versen, M. and
Schneider, M. D. and Wieck, A. D.}, year={2002}, pages={321–325} }'
chicago: Reuter, Dirk, M. Versen, M. D. Schneider, and A. D. Wieck. “Increased Mobility
Anisotropy in Selectively Doped AlxGa1−xAs/GaAs Heterostructures with High Electron
Densities.” Journal of Applied Physics, 2002, 321–25. https://doi.org/10.1063/1.373660.
ieee: D. Reuter, M. Versen, M. D. Schneider, and A. D. Wieck, “Increased mobility
anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron
densities,” Journal of Applied Physics, pp. 321–325, 2002.
mla: Reuter, Dirk, et al. “Increased Mobility Anisotropy in Selectively Doped AlxGa1−xAs/GaAs
Heterostructures with High Electron Densities.” Journal of Applied Physics,
2002, pp. 321–25, doi:10.1063/1.373660.
short: D. Reuter, M. Versen, M.D. Schneider, A.D. Wieck, Journal of Applied Physics
(2002) 321–325.
date_created: 2019-04-01T07:33:21Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.373660
language:
- iso: eng
page: 321-325
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures
with high electron densities
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8788'
author:
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: G.
full_name: Gerth, G.
last_name: Gerth
- first_name: J.
full_name: Kirschner, J.
last_name: Kirschner
citation:
ama: 'Reuter D, Gerth G, Kirschner J. Modifying diffusion anisotropies: Cap layer
induced changes in spreading anisotropies. Journal of Applied Physics.
2002:5374-5377. doi:10.1063/1.366304'
apa: 'Reuter, D., Gerth, G., & Kirschner, J. (2002). Modifying diffusion anisotropies:
Cap layer induced changes in spreading anisotropies. Journal of Applied Physics,
5374–5377. https://doi.org/10.1063/1.366304'
bibtex: '@article{Reuter_Gerth_Kirschner_2002, title={Modifying diffusion anisotropies:
Cap layer induced changes in spreading anisotropies}, DOI={10.1063/1.366304},
journal={Journal of Applied Physics}, author={Reuter, Dirk and Gerth, G. and Kirschner,
J.}, year={2002}, pages={5374–5377} }'
chicago: 'Reuter, Dirk, G. Gerth, and J. Kirschner. “Modifying Diffusion Anisotropies:
Cap Layer Induced Changes in Spreading Anisotropies.” Journal of Applied Physics,
2002, 5374–77. https://doi.org/10.1063/1.366304.'
ieee: 'D. Reuter, G. Gerth, and J. Kirschner, “Modifying diffusion anisotropies:
Cap layer induced changes in spreading anisotropies,” Journal of Applied Physics,
pp. 5374–5377, 2002.'
mla: 'Reuter, Dirk, et al. “Modifying Diffusion Anisotropies: Cap Layer Induced
Changes in Spreading Anisotropies.” Journal of Applied Physics, 2002, pp.
5374–77, doi:10.1063/1.366304.'
short: D. Reuter, G. Gerth, J. Kirschner, Journal of Applied Physics (2002) 5374–5377.
date_created: 2019-04-01T08:43:12Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.366304
language:
- iso: eng
page: 5374-5377
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
status: public
title: 'Modifying diffusion anisotropies: Cap layer induced changes in spreading anisotropies'
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '7693'
author:
- first_name: Soheyla
full_name: Eshlaghi, Soheyla
last_name: Eshlaghi
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Dieter
full_name: Suter, Dieter
last_name: Suter
- first_name: D.
full_name: Reuter, D.
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Eshlaghi S, Meier C, Suter D, Reuter D, Wieck AD. Depth profile of the implantation-enhanced
intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells. Journal of
Applied Physics. 1999;86(11):6605-6607. doi:10.1063/1.371720
apa: Eshlaghi, S., Meier, C., Suter, D., Reuter, D., & Wieck, A. D. (1999).
Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam
in AlAs/GaAs quantum wells. Journal of Applied Physics, 86(11),
6605–6607. https://doi.org/10.1063/1.371720
bibtex: '@article{Eshlaghi_Meier_Suter_Reuter_Wieck_1999, title={Depth profile of
the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum
wells}, volume={86}, DOI={10.1063/1.371720},
number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Eshlaghi, Soheyla and Meier, Cedrik and Suter, Dieter and Reuter, D. and
Wieck, A. D.}, year={1999}, pages={6605–6607} }'
chicago: 'Eshlaghi, Soheyla, Cedrik Meier, Dieter Suter, D. Reuter, and A. D. Wieck.
“Depth Profile of the Implantation-Enhanced Intermixing of Ga+ Focused Ion Beam
in AlAs/GaAs Quantum Wells.” Journal of Applied Physics 86, no. 11 (1999):
6605–7. https://doi.org/10.1063/1.371720.'
ieee: S. Eshlaghi, C. Meier, D. Suter, D. Reuter, and A. D. Wieck, “Depth profile
of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs
quantum wells,” Journal of Applied Physics, vol. 86, no. 11, pp. 6605–6607,
1999.
mla: Eshlaghi, Soheyla, et al. “Depth Profile of the Implantation-Enhanced Intermixing
of Ga+ Focused Ion Beam in AlAs/GaAs Quantum Wells.” Journal of Applied Physics,
vol. 86, no. 11, AIP Publishing, 1999, pp. 6605–07, doi:10.1063/1.371720.
short: S. Eshlaghi, C. Meier, D. Suter, D. Reuter, A.D. Wieck, Journal of Applied
Physics 86 (1999) 6605–6607.
date_created: 2019-02-13T14:59:37Z
date_updated: 2022-01-06T07:03:44Z
department:
- _id: '15'
doi: 10.1063/1.371720
extern: '1'
intvolume: ' 86'
issue: '11'
language:
- iso: eng
page: 6605-6607
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam
in AlAs/GaAs quantum wells
type: journal_article
user_id: '20798'
volume: 86
year: '1999'
...
---
_id: '40322'
author:
- first_name: Henning
full_name: Molsen, Henning
last_name: Molsen
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Molsen H, Kitzerow H-S. Bistability in polymer‐dispersed ferroelectric liquid
crystals. Journal of Applied Physics. 1994;75(2):710-716. doi:10.1063/1.356471
apa: Molsen, H., & Kitzerow, H.-S. (1994). Bistability in polymer‐dispersed
ferroelectric liquid crystals. Journal of Applied Physics, 75(2),
710–716. https://doi.org/10.1063/1.356471
bibtex: '@article{Molsen_Kitzerow_1994, title={Bistability in polymer‐dispersed
ferroelectric liquid crystals}, volume={75}, DOI={10.1063/1.356471},
number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
author={Molsen, Henning and Kitzerow, Heinz-Siegfried}, year={1994}, pages={710–716}
}'
chicago: 'Molsen, Henning, and Heinz-Siegfried Kitzerow. “Bistability in Polymer‐dispersed
Ferroelectric Liquid Crystals.” Journal of Applied Physics 75, no. 2 (1994):
710–16. https://doi.org/10.1063/1.356471.'
ieee: 'H. Molsen and H.-S. Kitzerow, “Bistability in polymer‐dispersed ferroelectric
liquid crystals,” Journal of Applied Physics, vol. 75, no. 2, pp. 710–716,
1994, doi: 10.1063/1.356471.'
mla: Molsen, Henning, and Heinz-Siegfried Kitzerow. “Bistability in Polymer‐dispersed
Ferroelectric Liquid Crystals.” Journal of Applied Physics, vol. 75, no.
2, AIP Publishing, 1994, pp. 710–16, doi:10.1063/1.356471.
short: H. Molsen, H.-S. Kitzerow, Journal of Applied Physics 75 (1994) 710–716.
date_created: 2023-01-26T11:06:23Z
date_updated: 2023-01-26T11:49:09Z
department:
- _id: '313'
doi: 10.1063/1.356471
extern: '1'
intvolume: ' 75'
issue: '2'
keyword:
- General Physics and Astronomy
language:
- iso: eng
page: 710-716
publication: Journal of Applied Physics
publication_identifier:
issn:
- 0021-8979
- 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Bistability in polymer‐dispersed ferroelectric liquid crystals
type: journal_article
user_id: '254'
volume: 75
year: '1994'
...