---
_id: '8720'
author:
- first_name: Cedrik
  full_name: Meier, Cedrik
  last_name: Meier
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: Christof
  full_name: Riedesel, Christof
  last_name: Riedesel
- first_name: Andreas D.
  full_name: Wieck, Andreas D.
  last_name: Wieck
citation:
  ama: Meier C, Reuter D, Riedesel C, Wieck AD. Fabrication of two-dimensional electron
    systems by focused ion beam doping of III/V semiconductor heterostructures. <i>Journal
    of Applied Physics</i>. 2003:6100-6106. doi:<a href="https://doi.org/10.1063/1.1563032">10.1063/1.1563032</a>
  apa: Meier, C., Reuter, D., Riedesel, C., &#38; Wieck, A. D. (2003). Fabrication
    of two-dimensional electron systems by focused ion beam doping of III/V semiconductor
    heterostructures. <i>Journal of Applied Physics</i>, 6100–6106. <a href="https://doi.org/10.1063/1.1563032">https://doi.org/10.1063/1.1563032</a>
  bibtex: '@article{Meier_Reuter_Riedesel_Wieck_2003, title={Fabrication of two-dimensional
    electron systems by focused ion beam doping of III/V semiconductor heterostructures},
    DOI={<a href="https://doi.org/10.1063/1.1563032">10.1063/1.1563032</a>}, journal={Journal
    of Applied Physics}, author={Meier, Cedrik and Reuter, Dirk and Riedesel, Christof
    and Wieck, Andreas D.}, year={2003}, pages={6100–6106} }'
  chicago: Meier, Cedrik, Dirk Reuter, Christof Riedesel, and Andreas D. Wieck. “Fabrication
    of Two-Dimensional Electron Systems by Focused Ion Beam Doping of III/V Semiconductor
    Heterostructures.” <i>Journal of Applied Physics</i>, 2003, 6100–6106. <a href="https://doi.org/10.1063/1.1563032">https://doi.org/10.1063/1.1563032</a>.
  ieee: C. Meier, D. Reuter, C. Riedesel, and A. D. Wieck, “Fabrication of two-dimensional
    electron systems by focused ion beam doping of III/V semiconductor heterostructures,”
    <i>Journal of Applied Physics</i>, pp. 6100–6106, 2003.
  mla: Meier, Cedrik, et al. “Fabrication of Two-Dimensional Electron Systems by Focused
    Ion Beam Doping of III/V Semiconductor Heterostructures.” <i>Journal of Applied
    Physics</i>, 2003, pp. 6100–06, doi:<a href="https://doi.org/10.1063/1.1563032">10.1063/1.1563032</a>.
  short: C. Meier, D. Reuter, C. Riedesel, A.D. Wieck, Journal of Applied Physics
    (2003) 6100–6106.
date_created: 2019-03-28T14:54:53Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1563032
language:
- iso: eng
page: 6100-6106
publication: Journal of Applied Physics
publication_identifier:
  issn:
  - 0021-8979
  - 1089-7550
publication_status: published
status: public
title: Fabrication of two-dimensional electron systems by focused ion beam doping
  of III/V semiconductor heterostructures
type: journal_article
user_id: '42514'
year: '2003'
...
---
_id: '7685'
author:
- first_name: M.
  full_name: Rahm, M.
  last_name: Rahm
- first_name: J.
  full_name: Raabe, J.
  last_name: Raabe
- first_name: R.
  full_name: Pulwey, R.
  last_name: Pulwey
- first_name: J.
  full_name: Biberger, J.
  last_name: Biberger
- first_name: W.
  full_name: Wegscheider, W.
  last_name: Wegscheider
- first_name: D.
  full_name: Weiss, D.
  last_name: Weiss
- first_name: Cedrik
  full_name: Meier, Cedrik
  id: '20798'
  last_name: Meier
  orcid: https://orcid.org/0000-0002-3787-3572
citation:
  ama: Rahm M, Raabe J, Pulwey R, et al. Planar Hall sensors for micro-Hall magnetometry.
    <i>Journal of Applied Physics</i>. 2002;91(10):7980. doi:<a href="https://doi.org/10.1063/1.1453338">10.1063/1.1453338</a>
  apa: Rahm, M., Raabe, J., Pulwey, R., Biberger, J., Wegscheider, W., Weiss, D.,
    &#38; Meier, C. (2002). Planar Hall sensors for micro-Hall magnetometry. <i>Journal
    of Applied Physics</i>, <i>91</i>(10), 7980. <a href="https://doi.org/10.1063/1.1453338">https://doi.org/10.1063/1.1453338</a>
  bibtex: '@article{Rahm_Raabe_Pulwey_Biberger_Wegscheider_Weiss_Meier_2002, title={Planar
    Hall sensors for micro-Hall magnetometry}, volume={91}, DOI={<a href="https://doi.org/10.1063/1.1453338">10.1063/1.1453338</a>},
    number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
    author={Rahm, M. and Raabe, J. and Pulwey, R. and Biberger, J. and Wegscheider,
    W. and Weiss, D. and Meier, Cedrik}, year={2002}, pages={7980} }'
  chicago: 'Rahm, M., J. Raabe, R. Pulwey, J. Biberger, W. Wegscheider, D. Weiss,
    and Cedrik Meier. “Planar Hall Sensors for Micro-Hall Magnetometry.” <i>Journal
    of Applied Physics</i> 91, no. 10 (2002): 7980. <a href="https://doi.org/10.1063/1.1453338">https://doi.org/10.1063/1.1453338</a>.'
  ieee: M. Rahm <i>et al.</i>, “Planar Hall sensors for micro-Hall magnetometry,”
    <i>Journal of Applied Physics</i>, vol. 91, no. 10, p. 7980, 2002.
  mla: Rahm, M., et al. “Planar Hall Sensors for Micro-Hall Magnetometry.” <i>Journal
    of Applied Physics</i>, vol. 91, no. 10, AIP Publishing, 2002, p. 7980, doi:<a
    href="https://doi.org/10.1063/1.1453338">10.1063/1.1453338</a>.
  short: M. Rahm, J. Raabe, R. Pulwey, J. Biberger, W. Wegscheider, D. Weiss, C. Meier,
    Journal of Applied Physics 91 (2002) 7980.
date_created: 2019-02-13T14:52:58Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1453338
extern: '1'
intvolume: '        91'
issue: '10'
language:
- iso: eng
page: '7980'
publication: Journal of Applied Physics
publication_identifier:
  issn:
  - 0021-8979
publication_status: published
publisher: AIP Publishing
status: public
title: Planar Hall sensors for micro-Hall magnetometry
type: journal_article
user_id: '20798'
volume: 91
year: '2002'
...
---
_id: '8763'
author:
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: M.
  full_name: Versen, M.
  last_name: Versen
- first_name: M. D.
  full_name: Schneider, M. D.
  last_name: Schneider
- first_name: A. D.
  full_name: Wieck, A. D.
  last_name: Wieck
citation:
  ama: Reuter D, Versen M, Schneider MD, Wieck AD. Increased mobility anisotropy in
    selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities.
    <i>Journal of Applied Physics</i>. 2002:321-325. doi:<a href="https://doi.org/10.1063/1.373660">10.1063/1.373660</a>
  apa: Reuter, D., Versen, M., Schneider, M. D., &#38; Wieck, A. D. (2002). Increased
    mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with
    high electron densities. <i>Journal of Applied Physics</i>, 321–325. <a href="https://doi.org/10.1063/1.373660">https://doi.org/10.1063/1.373660</a>
  bibtex: '@article{Reuter_Versen_Schneider_Wieck_2002, title={Increased mobility
    anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron
    densities}, DOI={<a href="https://doi.org/10.1063/1.373660">10.1063/1.373660</a>},
    journal={Journal of Applied Physics}, author={Reuter, Dirk and Versen, M. and
    Schneider, M. D. and Wieck, A. D.}, year={2002}, pages={321–325} }'
  chicago: Reuter, Dirk, M. Versen, M. D. Schneider, and A. D. Wieck. “Increased Mobility
    Anisotropy in Selectively Doped AlxGa1−xAs/GaAs Heterostructures with High Electron
    Densities.” <i>Journal of Applied Physics</i>, 2002, 321–25. <a href="https://doi.org/10.1063/1.373660">https://doi.org/10.1063/1.373660</a>.
  ieee: D. Reuter, M. Versen, M. D. Schneider, and A. D. Wieck, “Increased mobility
    anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron
    densities,” <i>Journal of Applied Physics</i>, pp. 321–325, 2002.
  mla: Reuter, Dirk, et al. “Increased Mobility Anisotropy in Selectively Doped AlxGa1−xAs/GaAs
    Heterostructures with High Electron Densities.” <i>Journal of Applied Physics</i>,
    2002, pp. 321–25, doi:<a href="https://doi.org/10.1063/1.373660">10.1063/1.373660</a>.
  short: D. Reuter, M. Versen, M.D. Schneider, A.D. Wieck, Journal of Applied Physics
    (2002) 321–325.
date_created: 2019-04-01T07:33:21Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.373660
language:
- iso: eng
page: 321-325
publication: Journal of Applied Physics
publication_identifier:
  issn:
  - 0021-8979
  - 1089-7550
publication_status: published
status: public
title: Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures
  with high electron densities
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8788'
author:
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: G.
  full_name: Gerth, G.
  last_name: Gerth
- first_name: J.
  full_name: Kirschner, J.
  last_name: Kirschner
citation:
  ama: 'Reuter D, Gerth G, Kirschner J. Modifying diffusion anisotropies: Cap layer
    induced changes in spreading anisotropies. <i>Journal of Applied Physics</i>.
    2002:5374-5377. doi:<a href="https://doi.org/10.1063/1.366304">10.1063/1.366304</a>'
  apa: 'Reuter, D., Gerth, G., &#38; Kirschner, J. (2002). Modifying diffusion anisotropies:
    Cap layer induced changes in spreading anisotropies. <i>Journal of Applied Physics</i>,
    5374–5377. <a href="https://doi.org/10.1063/1.366304">https://doi.org/10.1063/1.366304</a>'
  bibtex: '@article{Reuter_Gerth_Kirschner_2002, title={Modifying diffusion anisotropies:
    Cap layer induced changes in spreading anisotropies}, DOI={<a href="https://doi.org/10.1063/1.366304">10.1063/1.366304</a>},
    journal={Journal of Applied Physics}, author={Reuter, Dirk and Gerth, G. and Kirschner,
    J.}, year={2002}, pages={5374–5377} }'
  chicago: 'Reuter, Dirk, G. Gerth, and J. Kirschner. “Modifying Diffusion Anisotropies:
    Cap Layer Induced Changes in Spreading Anisotropies.” <i>Journal of Applied Physics</i>,
    2002, 5374–77. <a href="https://doi.org/10.1063/1.366304">https://doi.org/10.1063/1.366304</a>.'
  ieee: 'D. Reuter, G. Gerth, and J. Kirschner, “Modifying diffusion anisotropies:
    Cap layer induced changes in spreading anisotropies,” <i>Journal of Applied Physics</i>,
    pp. 5374–5377, 2002.'
  mla: 'Reuter, Dirk, et al. “Modifying Diffusion Anisotropies: Cap Layer Induced
    Changes in Spreading Anisotropies.” <i>Journal of Applied Physics</i>, 2002, pp.
    5374–77, doi:<a href="https://doi.org/10.1063/1.366304">10.1063/1.366304</a>.'
  short: D. Reuter, G. Gerth, J. Kirschner, Journal of Applied Physics (2002) 5374–5377.
date_created: 2019-04-01T08:43:12Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.366304
language:
- iso: eng
page: 5374-5377
publication: Journal of Applied Physics
publication_identifier:
  issn:
  - 0021-8979
  - 1089-7550
publication_status: published
status: public
title: 'Modifying diffusion anisotropies: Cap layer induced changes in spreading anisotropies'
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '7693'
author:
- first_name: Soheyla
  full_name: Eshlaghi, Soheyla
  last_name: Eshlaghi
- first_name: Cedrik
  full_name: Meier, Cedrik
  id: '20798'
  last_name: Meier
  orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Dieter
  full_name: Suter, Dieter
  last_name: Suter
- first_name: D.
  full_name: Reuter, D.
  last_name: Reuter
- first_name: A. D.
  full_name: Wieck, A. D.
  last_name: Wieck
citation:
  ama: Eshlaghi S, Meier C, Suter D, Reuter D, Wieck AD. Depth profile of the implantation-enhanced
    intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells. <i>Journal of
    Applied Physics</i>. 1999;86(11):6605-6607. doi:<a href="https://doi.org/10.1063/1.371720">10.1063/1.371720</a>
  apa: Eshlaghi, S., Meier, C., Suter, D., Reuter, D., &#38; Wieck, A. D. (1999).
    Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam
    in AlAs/GaAs quantum wells. <i>Journal of Applied Physics</i>, <i>86</i>(11),
    6605–6607. <a href="https://doi.org/10.1063/1.371720">https://doi.org/10.1063/1.371720</a>
  bibtex: '@article{Eshlaghi_Meier_Suter_Reuter_Wieck_1999, title={Depth profile of
    the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum
    wells}, volume={86}, DOI={<a href="https://doi.org/10.1063/1.371720">10.1063/1.371720</a>},
    number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
    author={Eshlaghi, Soheyla and Meier, Cedrik and Suter, Dieter and Reuter, D. and
    Wieck, A. D.}, year={1999}, pages={6605–6607} }'
  chicago: 'Eshlaghi, Soheyla, Cedrik Meier, Dieter Suter, D. Reuter, and A. D. Wieck.
    “Depth Profile of the Implantation-Enhanced Intermixing of Ga+ Focused Ion Beam
    in AlAs/GaAs Quantum Wells.” <i>Journal of Applied Physics</i> 86, no. 11 (1999):
    6605–7. <a href="https://doi.org/10.1063/1.371720">https://doi.org/10.1063/1.371720</a>.'
  ieee: S. Eshlaghi, C. Meier, D. Suter, D. Reuter, and A. D. Wieck, “Depth profile
    of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs
    quantum wells,” <i>Journal of Applied Physics</i>, vol. 86, no. 11, pp. 6605–6607,
    1999.
  mla: Eshlaghi, Soheyla, et al. “Depth Profile of the Implantation-Enhanced Intermixing
    of Ga+ Focused Ion Beam in AlAs/GaAs Quantum Wells.” <i>Journal of Applied Physics</i>,
    vol. 86, no. 11, AIP Publishing, 1999, pp. 6605–07, doi:<a href="https://doi.org/10.1063/1.371720">10.1063/1.371720</a>.
  short: S. Eshlaghi, C. Meier, D. Suter, D. Reuter, A.D. Wieck, Journal of Applied
    Physics 86 (1999) 6605–6607.
date_created: 2019-02-13T14:59:37Z
date_updated: 2022-01-06T07:03:44Z
department:
- _id: '15'
doi: 10.1063/1.371720
extern: '1'
intvolume: '        86'
issue: '11'
language:
- iso: eng
page: 6605-6607
publication: Journal of Applied Physics
publication_identifier:
  issn:
  - 0021-8979
  - 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam
  in AlAs/GaAs quantum wells
type: journal_article
user_id: '20798'
volume: 86
year: '1999'
...
---
_id: '40322'
author:
- first_name: Henning
  full_name: Molsen, Henning
  last_name: Molsen
- first_name: Heinz-Siegfried
  full_name: Kitzerow, Heinz-Siegfried
  id: '254'
  last_name: Kitzerow
citation:
  ama: Molsen H, Kitzerow H-S. Bistability in polymer‐dispersed ferroelectric liquid
    crystals. <i>Journal of Applied Physics</i>. 1994;75(2):710-716. doi:<a href="https://doi.org/10.1063/1.356471">10.1063/1.356471</a>
  apa: Molsen, H., &#38; Kitzerow, H.-S. (1994). Bistability in polymer‐dispersed
    ferroelectric liquid crystals. <i>Journal of Applied Physics</i>, <i>75</i>(2),
    710–716. <a href="https://doi.org/10.1063/1.356471">https://doi.org/10.1063/1.356471</a>
  bibtex: '@article{Molsen_Kitzerow_1994, title={Bistability in polymer‐dispersed
    ferroelectric liquid crystals}, volume={75}, DOI={<a href="https://doi.org/10.1063/1.356471">10.1063/1.356471</a>},
    number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
    author={Molsen, Henning and Kitzerow, Heinz-Siegfried}, year={1994}, pages={710–716}
    }'
  chicago: 'Molsen, Henning, and Heinz-Siegfried Kitzerow. “Bistability in Polymer‐dispersed
    Ferroelectric Liquid Crystals.” <i>Journal of Applied Physics</i> 75, no. 2 (1994):
    710–16. <a href="https://doi.org/10.1063/1.356471">https://doi.org/10.1063/1.356471</a>.'
  ieee: 'H. Molsen and H.-S. Kitzerow, “Bistability in polymer‐dispersed ferroelectric
    liquid crystals,” <i>Journal of Applied Physics</i>, vol. 75, no. 2, pp. 710–716,
    1994, doi: <a href="https://doi.org/10.1063/1.356471">10.1063/1.356471</a>.'
  mla: Molsen, Henning, and Heinz-Siegfried Kitzerow. “Bistability in Polymer‐dispersed
    Ferroelectric Liquid Crystals.” <i>Journal of Applied Physics</i>, vol. 75, no.
    2, AIP Publishing, 1994, pp. 710–16, doi:<a href="https://doi.org/10.1063/1.356471">10.1063/1.356471</a>.
  short: H. Molsen, H.-S. Kitzerow, Journal of Applied Physics 75 (1994) 710–716.
date_created: 2023-01-26T11:06:23Z
date_updated: 2023-01-26T11:49:09Z
department:
- _id: '313'
doi: 10.1063/1.356471
extern: '1'
intvolume: '        75'
issue: '2'
keyword:
- General Physics and Astronomy
language:
- iso: eng
page: 710-716
publication: Journal of Applied Physics
publication_identifier:
  issn:
  - 0021-8979
  - 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Bistability in polymer‐dispersed ferroelectric liquid crystals
type: journal_article
user_id: '254'
volume: 75
year: '1994'
...