@article{3959,
  abstract     = {{Microresonators containing quantum dots find application in devices like single photon emitters for quantum information technology as well as low threshold laser devices. We demonstrate the fabrication of 60 nm thin zinc-blende AlN microdisks including cubic GaN quantum dots using dry chemical etching techniques. Scanning electron microscopy analysis reveals the morphology with smooth surfaces of the microdisks. Micro-photoluminescence measurements exhibit optically active quantum dots. Furthermore this is the first report of resonator modes in the emission spectrum of a cubic AlN microdisk.}},
  author       = {{Bürger, M. and Kemper, R.M. and Bader, C.A. and Ruth, M. and Declair, S. and Meier, Cedrik and Förstner, Jens and As, D.J.}},
  issn         = {{0022-0248}},
  journal      = {{Journal of Crystal Growth}},
  keywords     = {{tet_topic_qd, tet_topic_microdisk}},
  pages        = {{287--290}},
  publisher    = {{Elsevier BV}},
  title        = {{{Cubic GaN quantum dots embedded in zinc-blende AlN microdisks}}},
  doi          = {{10.1016/j.jcrysgro.2012.12.058}},
  volume       = {{378}},
  year         = {{2013}},
}

@article{4104,
  abstract     = {{We report on the molecular beam epitaxy growth of cubic GaN on 3C–SiC (001) nanostructures. Transmission electron microscopy (TEM) studies show phase-pure cubic GaN crystals with a low defect density on top of the post shaped 3C–SiC nanostructures and GaN grown on their sidewalls, which is dominated by {111} planar defects. The nanostructures, aligned parallel and perpendicular to the [110] directions of the substrate, are located in anti-phase domains of the 3C–SiC/Si (001) substrate. These anti-phase domains strongly influence the optimum growth of GaN layers in these regions. TEM measurements demonstrate a different stacking fault density in the cubic GaN epilayer in these areas.}},
  author       = {{Kemper, R.M. and Hiller, L. and Stauden, T. and Pezoldt, J. and Duschik, K. and Niendorf, T. and Maier, H.J. and Meertens, D. and Tillmann, K. and As, D.J. and Lindner, Jörg}},
  issn         = {{0022-0248}},
  journal      = {{Journal of Crystal Growth}},
  location     = {{Nara (Japan)}},
  pages        = {{291--294}},
  publisher    = {{Elsevier BV}},
  title        = {{{Growth of cubic GaN on 3C–SiC/Si (001) nanostructures}}},
  doi          = {{10.1016/j.jcrysgro.2012.10.011}},
  volume       = {{378}},
  year         = {{2012}},
}

@article{7705,
  author       = {{Trunov, K. and Reuter, Dirk and Ludwig, A. and Chen, J.C.H. and Klochan, O. and Micolich, A.P. and Hamilton, A.R. and Wieck, A.D.}},
  issn         = {{0022-0248}},
  journal      = {{Journal of Crystal Growth}},
  number       = {{1}},
  pages        = {{48--51}},
  publisher    = {{Elsevier BV}},
  title        = {{{(100) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies of hole quantum wires}}},
  doi          = {{10.1016/j.jcrysgro.2010.11.060}},
  volume       = {{323}},
  year         = {{2010}},
}

@article{4144,
  abstract     = {{Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on nano-patterned 3C-SiC/Si 
(0 0 1)substrates with negligible hexagonal content and less defect density than in planar cubic GaN layers.Nano-patterning of 3C-SiC/Si(001) is achieved by self-ordered colloidal masks for the first time. The method presented here offers the possibility to create nano-patterned cubic GaN without the need for a GaN etching process andt hus isa potential alternative to the conventional top–down fabrication techniques.}},
  author       = {{Kemper, R.M. and Weinl, M. and Mietze, C. and Häberlen, M. and Schupp, T. and Tschumak, E. and Lindner, Jörg and Lischka, K. and As, Donald }},
  issn         = {{0022-0248}},
  journal      = {{Journal of Crystal Growth}},
  number       = {{1}},
  pages        = {{84--87}},
  publisher    = {{Elsevier BV}},
  title        = {{{Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates}}},
  doi          = {{10.1016/j.jcrysgro.2010.12.042}},
  volume       = {{323}},
  year         = {{2010}},
}

@article{4214,
  abstract     = {{Non-polar a -plane (1 1 2 ̄ 0) GaN films were grown on r-plane sapphire by metal–organic vapor phase epitaxy and were subsequently annealed for 90 min at 1070°C. Most dislocations were partial
dislocations, which terminated basal plane stacking faults. Prior to annealing, these dislocations were
randomly distributed. After annealing, these dislocations moved into arrays oriented along the [0 0 0 1]
direction and aligned perpendicular to the film–substrate interface throughout their length, although
the total dislocation density remained unchanged. These changes were accompanied by broadening of
the symmetric X-ray diffraction 1 1 2 ̄ 0 w-scan widths. The mechanism of movement was identified as
dislocation glide, occurring due to highly anisotropic stresses (confirmed by X-ray diffraction lattice
parameter measurements) and evidenced by macroscopic slip bands observed on the sample surface.
There was also an increase in the density of unintentionally n-type doped electrically conductive
inclined features present at the film–substrate interface (as observed in cross-section using scanning
capacitance microscopy), suggesting out-diffusion of impurities from the substrate along with prismatic
stacking faults. These data suggest that annealing processes performed close to film growth
temperatures can affect both the microstructure and the electrical properties of non-polar GaN films.}},
  author       = {{Hao, Rui and Zhu, T. and Häberlen, M. and Chang, T.Y. and Kappers, M.J. and Oliver, R.A. and Humphreys, C.J. and Moram, M.A.}},
  issn         = {{0022-0248}},
  journal      = {{Journal of Crystal Growth}},
  number       = {{23}},
  pages        = {{3536--3543}},
  publisher    = {{Elsevier BV}},
  title        = {{{The effects of annealing on non-polar (112¯0) a-plane GaN films}}},
  doi          = {{10.1016/j.jcrysgro.2010.08.041}},
  volume       = {{312}},
  year         = {{2010}},
}

@article{13830,
  author       = {{Rauls, E. and Wiebe, J. and Schmidt, Wolf Gero}},
  issn         = {{0022-0248}},
  journal      = {{Journal of Crystal Growth}},
  pages        = {{2892--2895}},
  title        = {{{Understanding the cubic AlN growth plane from first principles}}},
  doi          = {{10.1016/j.jcrysgro.2010.07.027}},
  volume       = {{312}},
  year         = {{2010}},
}

@article{4192,
  abstract     = {{Buried ion beam synthesized 3C-SiC layers were revealed to the surface of silicon wafers to provide lattice matched substrates for GaN thin film epitaxy. Both epitaxial SiC/Si(1 1 1) and SiC/Si(0 0 1) growth surfaces with either six- or four-fold crystal symmetry, respectively, were formed. GaN thin film growth was achieved by ion beam assisted molecular beam epitaxy (IBA–MBE) which – owing to the energy and momentum transfer of the ions – allows to deposit epitaxial thin films at particularly low growth temperatures where both the stable hexagonal and the metastable cubic polytype of GaN can be formed. It is shown by X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM) that using appropriate fluxes of Ga atoms both purely hexagonal and purely cubic GaN films can
be grown epitaxially on SiC/Si(1 1 1) and SiC/Si(0 0 1), respectively. Thereby Ga rich growth conditions seem to stabilize the formation of the cubic polytype. It is obvious from XTEM studies that the high density of crystal defects in the SiC layer is not transferred onto the growing GaN films and that the crystalline quality of GaN films improves with increasing film thickness. The influence of surface roughness and wettability, interfacial cavities and the nucleation of twin-type defects at the GaN/SiC interface on the crystalline quality of the GaN thin films is discussed.}},
  author       = {{Häberlen, M. and Gerlach, J.W. and Murphy, B. and Lindner, Jörg and Stritzker, B.}},
  issn         = {{0022-0248}},
  journal      = {{Journal of Crystal Growth}},
  number       = {{6}},
  pages        = {{762--769}},
  publisher    = {{Elsevier BV}},
  title        = {{{Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si}}},
  doi          = {{10.1016/j.jcrysgro.2009.12.048}},
  volume       = {{312}},
  year         = {{2009}},
}

@article{7646,
  author       = {{Regolin, I. and Sudfeld, D. and Lüttjohann, S. and Khorenko, V. and Prost, W. and Kästner, J. and Dumpich, G. and Meier, Cedrik and Lorke, A. and Tegude, F.-J.}},
  issn         = {{0022-0248}},
  journal      = {{Journal of Crystal Growth}},
  pages        = {{607--611}},
  publisher    = {{Elsevier BV}},
  title        = {{{Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs}}},
  doi          = {{10.1016/j.jcrysgro.2006.10.122}},
  volume       = {{298}},
  year         = {{2006}},
}

@article{8664,
  author       = {{Yang, J.L. and Reuter, Dirk and Wieck, A.D.}},
  issn         = {{0022-0248}},
  journal      = {{Journal of Crystal Growth}},
  pages        = {{278--284}},
  title        = {{{Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100)}}},
  doi          = {{10.1016/j.jcrysgro.2006.05.051}},
  year         = {{2006}},
}