--- _id: '3959' abstract: - lang: eng text: Microresonators containing quantum dots find application in devices like single photon emitters for quantum information technology as well as low threshold laser devices. We demonstrate the fabrication of 60 nm thin zinc-blende AlN microdisks including cubic GaN quantum dots using dry chemical etching techniques. Scanning electron microscopy analysis reveals the morphology with smooth surfaces of the microdisks. Micro-photoluminescence measurements exhibit optically active quantum dots. Furthermore this is the first report of resonator modes in the emission spectrum of a cubic AlN microdisk. article_type: original author: - first_name: M. full_name: Bürger, M. last_name: Bürger - first_name: R.M. full_name: Kemper, R.M. last_name: Kemper - first_name: C.A. full_name: Bader, C.A. last_name: Bader - first_name: M. full_name: Ruth, M. last_name: Ruth - first_name: S. full_name: Declair, S. last_name: Declair - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Jens full_name: Förstner, Jens id: '158' last_name: Förstner orcid: 0000-0001-7059-9862 - first_name: D.J. full_name: As, D.J. last_name: As citation: ama: Bürger M, Kemper RM, Bader CA, et al. Cubic GaN quantum dots embedded in zinc-blende AlN microdisks. Journal of Crystal Growth. 2013;378:287-290. doi:10.1016/j.jcrysgro.2012.12.058 apa: Bürger, M., Kemper, R. M., Bader, C. A., Ruth, M., Declair, S., Meier, C., … As, D. J. (2013). Cubic GaN quantum dots embedded in zinc-blende AlN microdisks. Journal of Crystal Growth, 378, 287–290. https://doi.org/10.1016/j.jcrysgro.2012.12.058 bibtex: '@article{Bürger_Kemper_Bader_Ruth_Declair_Meier_Förstner_As_2013, title={Cubic GaN quantum dots embedded in zinc-blende AlN microdisks}, volume={378}, DOI={10.1016/j.jcrysgro.2012.12.058}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Bürger, M. and Kemper, R.M. and Bader, C.A. and Ruth, M. and Declair, S. and Meier, Cedrik and Förstner, Jens and As, D.J.}, year={2013}, pages={287–290} }' chicago: 'Bürger, M., R.M. Kemper, C.A. Bader, M. Ruth, S. Declair, Cedrik Meier, Jens Förstner, and D.J. As. “Cubic GaN Quantum Dots Embedded in Zinc-Blende AlN Microdisks.” Journal of Crystal Growth 378 (2013): 287–90. https://doi.org/10.1016/j.jcrysgro.2012.12.058.' ieee: M. Bürger et al., “Cubic GaN quantum dots embedded in zinc-blende AlN microdisks,” Journal of Crystal Growth, vol. 378, pp. 287–290, 2013. mla: Bürger, M., et al. “Cubic GaN Quantum Dots Embedded in Zinc-Blende AlN Microdisks.” Journal of Crystal Growth, vol. 378, Elsevier BV, 2013, pp. 287–90, doi:10.1016/j.jcrysgro.2012.12.058. short: M. Bürger, R.M. Kemper, C.A. Bader, M. Ruth, S. Declair, C. Meier, J. Förstner, D.J. As, Journal of Crystal Growth 378 (2013) 287–290. date_created: 2018-08-21T07:33:08Z date_updated: 2022-01-06T07:00:00Z ddc: - '530' department: - _id: '15' doi: 10.1016/j.jcrysgro.2012.12.058 file: - access_level: closed content_type: application/pdf creator: hclaudia date_created: 2018-08-21T07:34:05Z date_updated: 2018-08-21T07:34:05Z file_id: '3960' file_name: 2013-01 Bürger,Kemper,Bader,Ruth,Declair,Meier,Förstner,As_Cubic GaN quantum dots embedded in zinc-blende AlN microdisks.pdf file_size: 532153 relation: main_file success: 1 file_date_updated: 2018-08-21T07:34:05Z has_accepted_license: '1' intvolume: ' 378' keyword: - tet_topic_qd - tet_topic_microdisk language: - iso: eng page: 287-290 publication: Journal of Crystal Growth publication_identifier: issn: - 0022-0248 publication_status: published publisher: Elsevier BV status: public title: Cubic GaN quantum dots embedded in zinc-blende AlN microdisks type: journal_article user_id: '55706' volume: 378 year: '2013' ... --- _id: '4104' abstract: - lang: eng text: We report on the molecular beam epitaxy growth of cubic GaN on 3C–SiC (001) nanostructures. Transmission electron microscopy (TEM) studies show phase-pure cubic GaN crystals with a low defect density on top of the post shaped 3C–SiC nanostructures and GaN grown on their sidewalls, which is dominated by {111} planar defects. The nanostructures, aligned parallel and perpendicular to the [110] directions of the substrate, are located in anti-phase domains of the 3C–SiC/Si (001) substrate. These anti-phase domains strongly influence the optimum growth of GaN layers in these regions. TEM measurements demonstrate a different stacking fault density in the cubic GaN epilayer in these areas. article_type: original author: - first_name: R.M. full_name: Kemper, R.M. last_name: Kemper - first_name: L. full_name: Hiller, L. last_name: Hiller - first_name: T. full_name: Stauden, T. last_name: Stauden - first_name: J. full_name: Pezoldt, J. last_name: Pezoldt - first_name: K. full_name: Duschik, K. last_name: Duschik - first_name: T. full_name: Niendorf, T. last_name: Niendorf - first_name: H.J. full_name: Maier, H.J. last_name: Maier - first_name: D. full_name: Meertens, D. last_name: Meertens - first_name: K. full_name: Tillmann, K. last_name: Tillmann - first_name: D.J. full_name: As, D.J. last_name: As - first_name: Jörg full_name: Lindner, Jörg id: '20797' last_name: Lindner citation: ama: Kemper RM, Hiller L, Stauden T, et al. Growth of cubic GaN on 3C–SiC/Si (001) nanostructures. Journal of Crystal Growth. 2012;378:291-294. doi:10.1016/j.jcrysgro.2012.10.011 apa: Kemper, R. M., Hiller, L., Stauden, T., Pezoldt, J., Duschik, K., Niendorf, T., … Lindner, J. (2012). Growth of cubic GaN on 3C–SiC/Si (001) nanostructures. Journal of Crystal Growth, 378, 291–294. https://doi.org/10.1016/j.jcrysgro.2012.10.011 bibtex: '@article{Kemper_Hiller_Stauden_Pezoldt_Duschik_Niendorf_Maier_Meertens_Tillmann_As_et al._2012, title={Growth of cubic GaN on 3C–SiC/Si (001) nanostructures}, volume={378}, DOI={10.1016/j.jcrysgro.2012.10.011}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Kemper, R.M. and Hiller, L. and Stauden, T. and Pezoldt, J. and Duschik, K. and Niendorf, T. and Maier, H.J. and Meertens, D. and Tillmann, K. and As, D.J. and et al.}, year={2012}, pages={291–294} }' chicago: 'Kemper, R.M., L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf, H.J. Maier, et al. “Growth of Cubic GaN on 3C–SiC/Si (001) Nanostructures.” Journal of Crystal Growth 378 (2012): 291–94. https://doi.org/10.1016/j.jcrysgro.2012.10.011.' ieee: R. M. Kemper et al., “Growth of cubic GaN on 3C–SiC/Si (001) nanostructures,” Journal of Crystal Growth, vol. 378, pp. 291–294, 2012. mla: Kemper, R. M., et al. “Growth of Cubic GaN on 3C–SiC/Si (001) Nanostructures.” Journal of Crystal Growth, vol. 378, Elsevier BV, 2012, pp. 291–94, doi:10.1016/j.jcrysgro.2012.10.011. short: R.M. Kemper, L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf, H.J. Maier, D. Meertens, K. Tillmann, D.J. As, J. Lindner, Journal of Crystal Growth 378 (2012) 291–294. conference: location: Nara (Japan) name: 17th Int. Conference on MBE 2012 date_created: 2018-08-23T12:59:44Z date_updated: 2022-01-06T07:00:18Z ddc: - '530' department: - _id: '15' - _id: '286' - _id: '294' doi: 10.1016/j.jcrysgro.2012.10.011 file: - access_level: closed content_type: application/pdf creator: hclaudia date_created: 2018-08-23T13:01:13Z date_updated: 2018-08-23T13:01:13Z file_id: '4105' file_name: Growth of cubic GaN on 3C-SiC-Si 001 nanostructures.pdf file_size: 3716730 relation: main_file success: 1 file_date_updated: 2018-08-23T13:01:13Z has_accepted_license: '1' intvolume: ' 378' language: - iso: eng page: 291-294 publication: Journal of Crystal Growth publication_identifier: issn: - 0022-0248 publication_status: published publisher: Elsevier BV status: public title: Growth of cubic GaN on 3C–SiC/Si (001) nanostructures type: journal_article user_id: '55706' volume: 378 year: '2012' ... --- _id: '7705' author: - first_name: K. full_name: Trunov, K. last_name: Trunov - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. full_name: Ludwig, A. last_name: Ludwig - first_name: J.C.H. full_name: Chen, J.C.H. last_name: Chen - first_name: O. full_name: Klochan, O. last_name: Klochan - first_name: A.P. full_name: Micolich, A.P. last_name: Micolich - first_name: A.R. full_name: Hamilton, A.R. last_name: Hamilton - first_name: A.D. full_name: Wieck, A.D. last_name: Wieck citation: ama: Trunov K, Reuter D, Ludwig A, et al. (100) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies of hole quantum wires. Journal of Crystal Growth. 2010;323(1):48-51. doi:10.1016/j.jcrysgro.2010.11.060 apa: Trunov, K., Reuter, D., Ludwig, A., Chen, J. C. H., Klochan, O., Micolich, A. P., … Wieck, A. D. (2010). (100) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies of hole quantum wires. Journal of Crystal Growth, 323(1), 48–51. https://doi.org/10.1016/j.jcrysgro.2010.11.060 bibtex: '@article{Trunov_Reuter_Ludwig_Chen_Klochan_Micolich_Hamilton_Wieck_2010, title={(100) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies of hole quantum wires}, volume={323}, DOI={10.1016/j.jcrysgro.2010.11.060}, number={1}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Trunov, K. and Reuter, Dirk and Ludwig, A. and Chen, J.C.H. and Klochan, O. and Micolich, A.P. and Hamilton, A.R. and Wieck, A.D.}, year={2010}, pages={48–51} }' chicago: 'Trunov, K., Dirk Reuter, A. Ludwig, J.C.H. Chen, O. Klochan, A.P. Micolich, A.R. Hamilton, and A.D. Wieck. “(100) GaAs/AlxGa1−xAs Heterostructures for Zeeman Spin Splitting Studies of Hole Quantum Wires.” Journal of Crystal Growth 323, no. 1 (2010): 48–51. https://doi.org/10.1016/j.jcrysgro.2010.11.060.' ieee: K. Trunov et al., “(100) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies of hole quantum wires,” Journal of Crystal Growth, vol. 323, no. 1, pp. 48–51, 2010. mla: Trunov, K., et al. “(100) GaAs/AlxGa1−xAs Heterostructures for Zeeman Spin Splitting Studies of Hole Quantum Wires.” Journal of Crystal Growth, vol. 323, no. 1, Elsevier BV, 2010, pp. 48–51, doi:10.1016/j.jcrysgro.2010.11.060. short: K. Trunov, D. Reuter, A. Ludwig, J.C.H. Chen, O. Klochan, A.P. Micolich, A.R. Hamilton, A.D. Wieck, Journal of Crystal Growth 323 (2010) 48–51. date_created: 2019-02-14T10:21:54Z date_updated: 2022-01-06T07:03:45Z department: - _id: '15' - _id: '230' doi: 10.1016/j.jcrysgro.2010.11.060 intvolume: ' 323' issue: '1' language: - iso: eng page: 48-51 publication: Journal of Crystal Growth publication_identifier: issn: - 0022-0248 publication_status: published publisher: Elsevier BV status: public title: (100) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies of hole quantum wires type: journal_article user_id: '42514' volume: 323 year: '2010' ... --- _id: '4144' abstract: - lang: eng text: "Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on nano-patterned 3C-SiC/Si \r\n(0 0 1)substrates with negligible hexagonal content and less defect density than in planar cubic GaN layers.Nano-patterning of 3C-SiC/Si(001) is achieved by self-ordered colloidal masks for the first time. The method presented here offers the possibility to create nano-patterned cubic GaN without the need for a GaN etching process andt hus isa potential alternative to the conventional top–down fabrication techniques." article_type: original author: - first_name: R.M. full_name: Kemper, R.M. last_name: Kemper - first_name: M. full_name: Weinl, M. last_name: Weinl - first_name: C. full_name: Mietze, C. last_name: Mietze - first_name: M. full_name: Häberlen, M. last_name: Häberlen - first_name: T. full_name: Schupp, T. last_name: Schupp - first_name: E. full_name: Tschumak, E. last_name: Tschumak - first_name: Jörg full_name: Lindner, Jörg id: '20797' last_name: Lindner - first_name: K. full_name: Lischka, K. last_name: Lischka - first_name: 'Donald ' full_name: 'As, Donald ' last_name: As citation: ama: Kemper RM, Weinl M, Mietze C, et al. Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates. Journal of Crystal Growth. 2010;323(1):84-87. doi:10.1016/j.jcrysgro.2010.12.042 apa: Kemper, R. M., Weinl, M., Mietze, C., Häberlen, M., Schupp, T., Tschumak, E., … As, D. (2010). Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates. Journal of Crystal Growth, 323(1), 84–87. https://doi.org/10.1016/j.jcrysgro.2010.12.042 bibtex: '@article{Kemper_Weinl_Mietze_Häberlen_Schupp_Tschumak_Lindner_Lischka_As_2010, title={Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates}, volume={323}, DOI={10.1016/j.jcrysgro.2010.12.042}, number={1}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Kemper, R.M. and Weinl, M. and Mietze, C. and Häberlen, M. and Schupp, T. and Tschumak, E. and Lindner, Jörg and Lischka, K. and As, Donald }, year={2010}, pages={84–87} }' chicago: 'Kemper, R.M., M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, Jörg Lindner, K. Lischka, and Donald As. “Growth of Cubic GaN on Nano-Patterned 3C-SiC/Si (001) Substrates.” Journal of Crystal Growth 323, no. 1 (2010): 84–87. https://doi.org/10.1016/j.jcrysgro.2010.12.042.' ieee: R. M. Kemper et al., “Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates,” Journal of Crystal Growth, vol. 323, no. 1, pp. 84–87, 2010. mla: Kemper, R. M., et al. “Growth of Cubic GaN on Nano-Patterned 3C-SiC/Si (001) Substrates.” Journal of Crystal Growth, vol. 323, no. 1, Elsevier BV, 2010, pp. 84–87, doi:10.1016/j.jcrysgro.2010.12.042. short: R.M. Kemper, M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, J. Lindner, K. Lischka, D. As, Journal of Crystal Growth 323 (2010) 84–87. date_created: 2018-08-27T12:34:33Z date_updated: 2022-01-06T07:00:24Z ddc: - '530' department: - _id: '15' - _id: '286' doi: 10.1016/j.jcrysgro.2010.12.042 file: - access_level: closed content_type: application/pdf creator: hclaudia date_created: 2018-08-27T12:35:32Z date_updated: 2018-08-27T12:35:32Z file_id: '4145' file_name: Growth of cubic GaN on nano-patterned 3C-SiC (001) substrates.pdf file_size: 665964 relation: main_file success: 1 file_date_updated: 2018-08-27T12:35:32Z has_accepted_license: '1' intvolume: ' 323' issue: '1' language: - iso: eng page: 84-87 publication: Journal of Crystal Growth publication_identifier: issn: - 0022-0248 publication_status: published publisher: Elsevier BV status: public title: Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates type: journal_article user_id: '55706' volume: 323 year: '2010' ... --- _id: '4214' abstract: - lang: eng text: "Non-polar a -plane (1 1 2 ̄ 0) GaN films were grown on r-plane sapphire by metal–organic vapor phase epitaxy and were subsequently annealed for 90 min at 1070°C. Most dislocations were partial\r\ndislocations, which terminated basal plane stacking faults. Prior to annealing, these dislocations were\r\nrandomly distributed. After annealing, these dislocations moved into arrays oriented along the [0 0 0 1]\r\ndirection and aligned perpendicular to the film–substrate interface throughout their length, although\r\nthe total dislocation density remained unchanged. These changes were accompanied by broadening of\r\nthe symmetric X-ray diffraction 1 1 2 ̄ 0 w-scan widths. The mechanism of movement was identified as\r\ndislocation glide, occurring due to highly anisotropic stresses (confirmed by X-ray diffraction lattice\r\nparameter measurements) and evidenced by macroscopic slip bands observed on the sample surface.\r\nThere was also an increase in the density of unintentionally n-type doped electrically conductive\r\ninclined features present at the film–substrate interface (as observed in cross-section using scanning\r\ncapacitance microscopy), suggesting out-diffusion of impurities from the substrate along with prismatic\r\nstacking faults. These data suggest that annealing processes performed close to film growth\r\ntemperatures can affect both the microstructure and the electrical properties of non-polar GaN films." article_type: original author: - first_name: Rui full_name: Hao, Rui last_name: Hao - first_name: T. full_name: Zhu, T. last_name: Zhu - first_name: M. full_name: Häberlen, M. last_name: Häberlen - first_name: T.Y. full_name: Chang, T.Y. last_name: Chang - first_name: M.J. full_name: Kappers, M.J. last_name: Kappers - first_name: R.A. full_name: Oliver, R.A. last_name: Oliver - first_name: C.J. full_name: Humphreys, C.J. last_name: Humphreys - first_name: M.A. full_name: Moram, M.A. last_name: Moram citation: ama: Hao R, Zhu T, Häberlen M, et al. The effects of annealing on non-polar (112¯0) a-plane GaN films. Journal of Crystal Growth. 2010;312(23):3536-3543. doi:10.1016/j.jcrysgro.2010.08.041 apa: Hao, R., Zhu, T., Häberlen, M., Chang, T. Y., Kappers, M. J., Oliver, R. A., … Moram, M. A. (2010). The effects of annealing on non-polar (112¯0) a-plane GaN films. Journal of Crystal Growth, 312(23), 3536–3543. https://doi.org/10.1016/j.jcrysgro.2010.08.041 bibtex: '@article{Hao_Zhu_Häberlen_Chang_Kappers_Oliver_Humphreys_Moram_2010, title={The effects of annealing on non-polar (112¯0) a-plane GaN films}, volume={312}, DOI={10.1016/j.jcrysgro.2010.08.041}, number={23}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Hao, Rui and Zhu, T. and Häberlen, M. and Chang, T.Y. and Kappers, M.J. and Oliver, R.A. and Humphreys, C.J. and Moram, M.A.}, year={2010}, pages={3536–3543} }' chicago: 'Hao, Rui, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J. Humphreys, and M.A. Moram. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN Films.” Journal of Crystal Growth 312, no. 23 (2010): 3536–43. https://doi.org/10.1016/j.jcrysgro.2010.08.041.' ieee: R. Hao et al., “The effects of annealing on non-polar (112¯0) a-plane GaN films,” Journal of Crystal Growth, vol. 312, no. 23, pp. 3536–3543, 2010. mla: Hao, Rui, et al. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN Films.” Journal of Crystal Growth, vol. 312, no. 23, Elsevier BV, 2010, pp. 3536–43, doi:10.1016/j.jcrysgro.2010.08.041. short: R. Hao, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J. Humphreys, M.A. Moram, Journal of Crystal Growth 312 (2010) 3536–3543. date_created: 2018-08-28T12:49:39Z date_updated: 2022-01-06T07:00:37Z ddc: - '530' department: - _id: '15' doi: 10.1016/j.jcrysgro.2010.08.041 file: - access_level: closed content_type: application/pdf creator: hclaudia date_created: 2018-08-28T12:50:07Z date_updated: 2018-08-28T12:50:07Z file_id: '4215' file_name: The effects of annealing on non-polar (11-20) a-plane GaN films.pdf file_size: 1218752 relation: main_file success: 1 file_date_updated: 2018-08-28T12:50:07Z has_accepted_license: '1' intvolume: ' 312' issue: '23' language: - iso: eng page: 3536-3543 publication: Journal of Crystal Growth publication_identifier: issn: - 0022-0248 publication_status: published publisher: Elsevier BV status: public title: The effects of annealing on non-polar (112¯0) a-plane GaN films type: journal_article user_id: '55706' volume: 312 year: '2010' ... --- _id: '13830' author: - first_name: E. full_name: Rauls, E. last_name: Rauls - first_name: J. full_name: Wiebe, J. last_name: Wiebe - first_name: Wolf Gero full_name: Schmidt, Wolf Gero id: '468' last_name: Schmidt orcid: 0000-0002-2717-5076 citation: ama: Rauls E, Wiebe J, Schmidt WG. Understanding the cubic AlN growth plane from first principles. Journal of Crystal Growth. 2010;312:2892-2895. doi:10.1016/j.jcrysgro.2010.07.027 apa: Rauls, E., Wiebe, J., & Schmidt, W. G. (2010). Understanding the cubic AlN growth plane from first principles. Journal of Crystal Growth, 312, 2892–2895. https://doi.org/10.1016/j.jcrysgro.2010.07.027 bibtex: '@article{Rauls_Wiebe_Schmidt_2010, title={Understanding the cubic AlN growth plane from first principles}, volume={312}, DOI={10.1016/j.jcrysgro.2010.07.027}, journal={Journal of Crystal Growth}, author={Rauls, E. and Wiebe, J. and Schmidt, Wolf Gero}, year={2010}, pages={2892–2895} }' chicago: 'Rauls, E., J. Wiebe, and Wolf Gero Schmidt. “Understanding the Cubic AlN Growth Plane from First Principles.” Journal of Crystal Growth 312 (2010): 2892–95. https://doi.org/10.1016/j.jcrysgro.2010.07.027.' ieee: E. Rauls, J. Wiebe, and W. G. Schmidt, “Understanding the cubic AlN growth plane from first principles,” Journal of Crystal Growth, vol. 312, pp. 2892–2895, 2010. mla: Rauls, E., et al. “Understanding the Cubic AlN Growth Plane from First Principles.” Journal of Crystal Growth, vol. 312, 2010, pp. 2892–95, doi:10.1016/j.jcrysgro.2010.07.027. short: E. Rauls, J. Wiebe, W.G. Schmidt, Journal of Crystal Growth 312 (2010) 2892–2895. date_created: 2019-10-15T07:34:48Z date_updated: 2022-01-06T06:51:45Z department: - _id: '15' - _id: '170' - _id: '295' doi: 10.1016/j.jcrysgro.2010.07.027 funded_apc: '1' intvolume: ' 312' language: - iso: eng page: 2892-2895 project: - _id: '52' name: Computing Resources Provided by the Paderborn Center for Parallel Computing publication: Journal of Crystal Growth publication_identifier: issn: - 0022-0248 publication_status: published status: public title: Understanding the cubic AlN growth plane from first principles type: journal_article user_id: '16199' volume: 312 year: '2010' ... --- _id: '4192' abstract: - lang: eng text: "Buried ion beam synthesized 3C-SiC layers were revealed to the surface of silicon wafers to provide lattice matched substrates for GaN thin film epitaxy. Both epitaxial SiC/Si(1 1 1) and SiC/Si(0 0 1) growth surfaces with either six- or four-fold crystal symmetry, respectively, were formed. GaN thin film growth was achieved by ion beam assisted molecular beam epitaxy (IBA–MBE) which – owing to the energy and momentum transfer of the ions – allows to deposit epitaxial thin films at particularly low growth temperatures where both the stable hexagonal and the metastable cubic polytype of GaN can be formed. It is shown by X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM) that using appropriate fluxes of Ga atoms both purely hexagonal and purely cubic GaN films can\r\nbe grown epitaxially on SiC/Si(1 1 1) and SiC/Si(0 0 1), respectively. Thereby Ga rich growth conditions seem to stabilize the formation of the cubic polytype. It is obvious from XTEM studies that the high density of crystal defects in the SiC layer is not transferred onto the growing GaN films and that the crystalline quality of GaN films improves with increasing film thickness. The influence of surface roughness and wettability, interfacial cavities and the nucleation of twin-type defects at the GaN/SiC interface on the crystalline quality of the GaN thin films is discussed." article_type: original author: - first_name: M. full_name: Häberlen, M. last_name: Häberlen - first_name: J.W. full_name: Gerlach, J.W. last_name: Gerlach - first_name: B. full_name: Murphy, B. last_name: Murphy - first_name: Jörg full_name: Lindner, Jörg id: '20797' last_name: Lindner - first_name: B. full_name: Stritzker, B. last_name: Stritzker citation: ama: Häberlen M, Gerlach JW, Murphy B, Lindner J, Stritzker B. Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. Journal of Crystal Growth. 2009;312(6):762-769. doi:10.1016/j.jcrysgro.2009.12.048 apa: Häberlen, M., Gerlach, J. W., Murphy, B., Lindner, J., & Stritzker, B. (2009). Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. Journal of Crystal Growth, 312(6), 762–769. https://doi.org/10.1016/j.jcrysgro.2009.12.048 bibtex: '@article{Häberlen_Gerlach_Murphy_Lindner_Stritzker_2009, title={Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si}, volume={312}, DOI={10.1016/j.jcrysgro.2009.12.048}, number={6}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Häberlen, M. and Gerlach, J.W. and Murphy, B. and Lindner, Jörg and Stritzker, B.}, year={2009}, pages={762–769} }' chicago: 'Häberlen, M., J.W. Gerlach, B. Murphy, Jörg Lindner, and B. Stritzker. “Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE on SiC/Si.” Journal of Crystal Growth 312, no. 6 (2009): 762–69. https://doi.org/10.1016/j.jcrysgro.2009.12.048.' ieee: M. Häberlen, J. W. Gerlach, B. Murphy, J. Lindner, and B. Stritzker, “Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si,” Journal of Crystal Growth, vol. 312, no. 6, pp. 762–769, 2009. mla: Häberlen, M., et al. “Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE on SiC/Si.” Journal of Crystal Growth, vol. 312, no. 6, Elsevier BV, 2009, pp. 762–69, doi:10.1016/j.jcrysgro.2009.12.048. short: M. Häberlen, J.W. Gerlach, B. Murphy, J. Lindner, B. Stritzker, Journal of Crystal Growth 312 (2009) 762–769. date_created: 2018-08-28T11:50:05Z date_updated: 2022-01-06T07:00:32Z ddc: - '530' department: - _id: '15' doi: 10.1016/j.jcrysgro.2009.12.048 file: - access_level: closed content_type: application/pdf creator: hclaudia date_created: 2018-08-28T11:50:45Z date_updated: 2018-08-28T11:50:45Z file_id: '4193' file_name: Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA-MBE on SiC-Si.pdf file_size: 828431 relation: main_file success: 1 file_date_updated: 2018-08-28T11:50:45Z has_accepted_license: '1' intvolume: ' 312' issue: '6' language: - iso: eng page: 762-769 publication: Journal of Crystal Growth publication_identifier: issn: - 0022-0248 publication_status: published publisher: Elsevier BV status: public title: Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si type: journal_article user_id: '55706' volume: 312 year: '2009' ... --- _id: '7646' author: - first_name: I. full_name: Regolin, I. last_name: Regolin - first_name: D. full_name: Sudfeld, D. last_name: Sudfeld - first_name: S. full_name: Lüttjohann, S. last_name: Lüttjohann - first_name: V. full_name: Khorenko, V. last_name: Khorenko - first_name: W. full_name: Prost, W. last_name: Prost - first_name: J. full_name: Kästner, J. last_name: Kästner - first_name: G. full_name: Dumpich, G. last_name: Dumpich - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: A. full_name: Lorke, A. last_name: Lorke - first_name: F.-J. full_name: Tegude, F.-J. last_name: Tegude citation: ama: Regolin I, Sudfeld D, Lüttjohann S, et al. Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs. Journal of Crystal Growth. 2006;298:607-611. doi:10.1016/j.jcrysgro.2006.10.122 apa: Regolin, I., Sudfeld, D., Lüttjohann, S., Khorenko, V., Prost, W., Kästner, J., … Tegude, F.-J. (2006). Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs. Journal of Crystal Growth, 298, 607–611. https://doi.org/10.1016/j.jcrysgro.2006.10.122 bibtex: '@article{Regolin_Sudfeld_Lüttjohann_Khorenko_Prost_Kästner_Dumpich_Meier_Lorke_Tegude_2006, title={Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs}, volume={298}, DOI={10.1016/j.jcrysgro.2006.10.122}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Regolin, I. and Sudfeld, D. and Lüttjohann, S. and Khorenko, V. and Prost, W. and Kästner, J. and Dumpich, G. and Meier, Cedrik and Lorke, A. and Tegude, F.-J.}, year={2006}, pages={607–611} }' chicago: 'Regolin, I., D. Sudfeld, S. Lüttjohann, V. Khorenko, W. Prost, J. Kästner, G. Dumpich, Cedrik Meier, A. Lorke, and F.-J. Tegude. “Growth and Characterisation of GaAs/InGaAs/GaAs Nanowhiskers on (111) GaAs.” Journal of Crystal Growth 298 (2006): 607–11. https://doi.org/10.1016/j.jcrysgro.2006.10.122.' ieee: I. Regolin et al., “Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs,” Journal of Crystal Growth, vol. 298, pp. 607–611, 2006. mla: Regolin, I., et al. “Growth and Characterisation of GaAs/InGaAs/GaAs Nanowhiskers on (111) GaAs.” Journal of Crystal Growth, vol. 298, Elsevier BV, 2006, pp. 607–11, doi:10.1016/j.jcrysgro.2006.10.122. short: I. Regolin, D. Sudfeld, S. Lüttjohann, V. Khorenko, W. Prost, J. Kästner, G. Dumpich, C. Meier, A. Lorke, F.-J. Tegude, Journal of Crystal Growth 298 (2006) 607–611. date_created: 2019-02-13T11:36:42Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1016/j.jcrysgro.2006.10.122 extern: '1' intvolume: ' 298' language: - iso: eng page: 607-611 publication: Journal of Crystal Growth publication_identifier: issn: - 0022-0248 publication_status: published publisher: Elsevier BV status: public title: Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs type: journal_article user_id: '20798' volume: 298 year: '2006' ... --- _id: '8664' author: - first_name: J.L. full_name: Yang, J.L. last_name: Yang - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A.D. full_name: Wieck, A.D. last_name: Wieck citation: ama: Yang JL, Reuter D, Wieck AD. Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100). Journal of Crystal Growth. 2006:278-284. doi:10.1016/j.jcrysgro.2006.05.051 apa: Yang, J. L., Reuter, D., & Wieck, A. D. (2006). Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100). Journal of Crystal Growth, 278–284. https://doi.org/10.1016/j.jcrysgro.2006.05.051 bibtex: '@article{Yang_Reuter_Wieck_2006, title={Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100)}, DOI={10.1016/j.jcrysgro.2006.05.051}, journal={Journal of Crystal Growth}, author={Yang, J.L. and Reuter, Dirk and Wieck, A.D.}, year={2006}, pages={278–284} }' chicago: Yang, J.L., Dirk Reuter, and A.D. Wieck. “Sticking Behavior of the Dopants Si, C, and Be upon Re-Evaporation of Individually Doped GaAs(100).” Journal of Crystal Growth, 2006, 278–84. https://doi.org/10.1016/j.jcrysgro.2006.05.051. ieee: J. L. Yang, D. Reuter, and A. D. Wieck, “Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100),” Journal of Crystal Growth, pp. 278–284, 2006. mla: Yang, J. L., et al. “Sticking Behavior of the Dopants Si, C, and Be upon Re-Evaporation of Individually Doped GaAs(100).” Journal of Crystal Growth, 2006, pp. 278–84, doi:10.1016/j.jcrysgro.2006.05.051. short: J.L. Yang, D. Reuter, A.D. Wieck, Journal of Crystal Growth (2006) 278–284. date_created: 2019-03-27T08:39:18Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1016/j.jcrysgro.2006.05.051 language: - iso: eng page: 278-284 publication: Journal of Crystal Growth publication_identifier: issn: - 0022-0248 publication_status: published status: public title: Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100) type: journal_article user_id: '42514' year: '2006' ...