---
_id: '3959'
abstract:
- lang: eng
text: Microresonators containing quantum dots find application in devices like single
photon emitters for quantum information technology as well as low threshold laser
devices. We demonstrate the fabrication of 60 nm thin zinc-blende AlN microdisks
including cubic GaN quantum dots using dry chemical etching techniques. Scanning
electron microscopy analysis reveals the morphology with smooth surfaces of the
microdisks. Micro-photoluminescence measurements exhibit optically active quantum
dots. Furthermore this is the first report of resonator modes in the emission
spectrum of a cubic AlN microdisk.
article_type: original
author:
- first_name: M.
full_name: Bürger, M.
last_name: Bürger
- first_name: R.M.
full_name: Kemper, R.M.
last_name: Kemper
- first_name: C.A.
full_name: Bader, C.A.
last_name: Bader
- first_name: M.
full_name: Ruth, M.
last_name: Ruth
- first_name: S.
full_name: Declair, S.
last_name: Declair
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: D.J.
full_name: As, D.J.
last_name: As
citation:
ama: Bürger M, Kemper RM, Bader CA, et al. Cubic GaN quantum dots embedded in zinc-blende
AlN microdisks. Journal of Crystal Growth. 2013;378:287-290. doi:10.1016/j.jcrysgro.2012.12.058
apa: Bürger, M., Kemper, R. M., Bader, C. A., Ruth, M., Declair, S., Meier, C.,
… As, D. J. (2013). Cubic GaN quantum dots embedded in zinc-blende AlN microdisks.
Journal of Crystal Growth, 378, 287–290. https://doi.org/10.1016/j.jcrysgro.2012.12.058
bibtex: '@article{Bürger_Kemper_Bader_Ruth_Declair_Meier_Förstner_As_2013, title={Cubic
GaN quantum dots embedded in zinc-blende AlN microdisks}, volume={378}, DOI={10.1016/j.jcrysgro.2012.12.058},
journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Bürger,
M. and Kemper, R.M. and Bader, C.A. and Ruth, M. and Declair, S. and Meier, Cedrik
and Förstner, Jens and As, D.J.}, year={2013}, pages={287–290} }'
chicago: 'Bürger, M., R.M. Kemper, C.A. Bader, M. Ruth, S. Declair, Cedrik Meier,
Jens Förstner, and D.J. As. “Cubic GaN Quantum Dots Embedded in Zinc-Blende AlN
Microdisks.” Journal of Crystal Growth 378 (2013): 287–90. https://doi.org/10.1016/j.jcrysgro.2012.12.058.'
ieee: M. Bürger et al., “Cubic GaN quantum dots embedded in zinc-blende AlN
microdisks,” Journal of Crystal Growth, vol. 378, pp. 287–290, 2013.
mla: Bürger, M., et al. “Cubic GaN Quantum Dots Embedded in Zinc-Blende AlN Microdisks.”
Journal of Crystal Growth, vol. 378, Elsevier BV, 2013, pp. 287–90, doi:10.1016/j.jcrysgro.2012.12.058.
short: M. Bürger, R.M. Kemper, C.A. Bader, M. Ruth, S. Declair, C. Meier, J. Förstner,
D.J. As, Journal of Crystal Growth 378 (2013) 287–290.
date_created: 2018-08-21T07:33:08Z
date_updated: 2022-01-06T07:00:00Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1016/j.jcrysgro.2012.12.058
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-21T07:34:05Z
date_updated: 2018-08-21T07:34:05Z
file_id: '3960'
file_name: 2013-01 Bürger,Kemper,Bader,Ruth,Declair,Meier,Förstner,As_Cubic GaN
quantum dots embedded in zinc-blende AlN microdisks.pdf
file_size: 532153
relation: main_file
success: 1
file_date_updated: 2018-08-21T07:34:05Z
has_accepted_license: '1'
intvolume: ' 378'
keyword:
- tet_topic_qd
- tet_topic_microdisk
language:
- iso: eng
page: 287-290
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Cubic GaN quantum dots embedded in zinc-blende AlN microdisks
type: journal_article
user_id: '55706'
volume: 378
year: '2013'
...
---
_id: '4104'
abstract:
- lang: eng
text: We report on the molecular beam epitaxy growth of cubic GaN on 3C–SiC (001)
nanostructures. Transmission electron microscopy (TEM) studies show phase-pure
cubic GaN crystals with a low defect density on top of the post shaped 3C–SiC
nanostructures and GaN grown on their sidewalls, which is dominated by {111} planar
defects. The nanostructures, aligned parallel and perpendicular to the [110] directions
of the substrate, are located in anti-phase domains of the 3C–SiC/Si (001) substrate.
These anti-phase domains strongly influence the optimum growth of GaN layers in
these regions. TEM measurements demonstrate a different stacking fault density
in the cubic GaN epilayer in these areas.
article_type: original
author:
- first_name: R.M.
full_name: Kemper, R.M.
last_name: Kemper
- first_name: L.
full_name: Hiller, L.
last_name: Hiller
- first_name: T.
full_name: Stauden, T.
last_name: Stauden
- first_name: J.
full_name: Pezoldt, J.
last_name: Pezoldt
- first_name: K.
full_name: Duschik, K.
last_name: Duschik
- first_name: T.
full_name: Niendorf, T.
last_name: Niendorf
- first_name: H.J.
full_name: Maier, H.J.
last_name: Maier
- first_name: D.
full_name: Meertens, D.
last_name: Meertens
- first_name: K.
full_name: Tillmann, K.
last_name: Tillmann
- first_name: D.J.
full_name: As, D.J.
last_name: As
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: Kemper RM, Hiller L, Stauden T, et al. Growth of cubic GaN on 3C–SiC/Si (001)
nanostructures. Journal of Crystal Growth. 2012;378:291-294. doi:10.1016/j.jcrysgro.2012.10.011
apa: Kemper, R. M., Hiller, L., Stauden, T., Pezoldt, J., Duschik, K., Niendorf,
T., Maier, H. J., Meertens, D., Tillmann, K., As, D. J., & Lindner, J. (2012).
Growth of cubic GaN on 3C–SiC/Si (001) nanostructures. Journal of Crystal Growth,
378, 291–294. https://doi.org/10.1016/j.jcrysgro.2012.10.011
bibtex: '@article{Kemper_Hiller_Stauden_Pezoldt_Duschik_Niendorf_Maier_Meertens_Tillmann_As_et
al._2012, title={Growth of cubic GaN on 3C–SiC/Si (001) nanostructures}, volume={378},
DOI={10.1016/j.jcrysgro.2012.10.011},
journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Kemper,
R.M. and Hiller, L. and Stauden, T. and Pezoldt, J. and Duschik, K. and Niendorf,
T. and Maier, H.J. and Meertens, D. and Tillmann, K. and As, D.J. and et al.},
year={2012}, pages={291–294} }'
chicago: 'Kemper, R.M., L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf,
H.J. Maier, et al. “Growth of Cubic GaN on 3C–SiC/Si (001) Nanostructures.” Journal
of Crystal Growth 378 (2012): 291–94. https://doi.org/10.1016/j.jcrysgro.2012.10.011.'
ieee: 'R. M. Kemper et al., “Growth of cubic GaN on 3C–SiC/Si (001) nanostructures,”
Journal of Crystal Growth, vol. 378, pp. 291–294, 2012, doi: 10.1016/j.jcrysgro.2012.10.011.'
mla: Kemper, R. M., et al. “Growth of Cubic GaN on 3C–SiC/Si (001) Nanostructures.”
Journal of Crystal Growth, vol. 378, Elsevier BV, 2012, pp. 291–94, doi:10.1016/j.jcrysgro.2012.10.011.
short: R.M. Kemper, L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf,
H.J. Maier, D. Meertens, K. Tillmann, D.J. As, J. Lindner, Journal of Crystal
Growth 378 (2012) 291–294.
conference:
location: Nara (Japan)
name: 17th Int. Conference on MBE 2012
date_created: 2018-08-23T12:59:44Z
date_updated: 2025-12-16T08:12:58Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
- _id: '35'
- _id: '230'
doi: 10.1016/j.jcrysgro.2012.10.011
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-23T13:01:13Z
date_updated: 2018-08-23T13:01:13Z
file_id: '4105'
file_name: Growth of cubic GaN on 3C-SiC-Si 001 nanostructures.pdf
file_size: 3716730
relation: main_file
success: 1
file_date_updated: 2018-08-23T13:01:13Z
has_accepted_license: '1'
intvolume: ' 378'
language:
- iso: eng
page: 291-294
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Growth of cubic GaN on 3C–SiC/Si (001) nanostructures
type: journal_article
user_id: '16199'
volume: 378
year: '2012'
...
---
_id: '7705'
author:
- first_name: K.
full_name: Trunov, K.
last_name: Trunov
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A.
full_name: Ludwig, A.
last_name: Ludwig
- first_name: J.C.H.
full_name: Chen, J.C.H.
last_name: Chen
- first_name: O.
full_name: Klochan, O.
last_name: Klochan
- first_name: A.P.
full_name: Micolich, A.P.
last_name: Micolich
- first_name: A.R.
full_name: Hamilton, A.R.
last_name: Hamilton
- first_name: A.D.
full_name: Wieck, A.D.
last_name: Wieck
citation:
ama: Trunov K, Reuter D, Ludwig A, et al. (100) GaAs/AlxGa1−xAs heterostructures
for Zeeman spin splitting studies of hole quantum wires. Journal of Crystal
Growth. 2010;323(1):48-51. doi:10.1016/j.jcrysgro.2010.11.060
apa: Trunov, K., Reuter, D., Ludwig, A., Chen, J. C. H., Klochan, O., Micolich,
A. P., … Wieck, A. D. (2010). (100) GaAs/AlxGa1−xAs heterostructures for Zeeman
spin splitting studies of hole quantum wires. Journal of Crystal Growth,
323(1), 48–51. https://doi.org/10.1016/j.jcrysgro.2010.11.060
bibtex: '@article{Trunov_Reuter_Ludwig_Chen_Klochan_Micolich_Hamilton_Wieck_2010,
title={(100) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies
of hole quantum wires}, volume={323}, DOI={10.1016/j.jcrysgro.2010.11.060},
number={1}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Trunov,
K. and Reuter, Dirk and Ludwig, A. and Chen, J.C.H. and Klochan, O. and Micolich,
A.P. and Hamilton, A.R. and Wieck, A.D.}, year={2010}, pages={48–51} }'
chicago: 'Trunov, K., Dirk Reuter, A. Ludwig, J.C.H. Chen, O. Klochan, A.P. Micolich,
A.R. Hamilton, and A.D. Wieck. “(100) GaAs/AlxGa1−xAs Heterostructures for Zeeman
Spin Splitting Studies of Hole Quantum Wires.” Journal of Crystal Growth
323, no. 1 (2010): 48–51. https://doi.org/10.1016/j.jcrysgro.2010.11.060.'
ieee: K. Trunov et al., “(100) GaAs/AlxGa1−xAs heterostructures for Zeeman
spin splitting studies of hole quantum wires,” Journal of Crystal Growth,
vol. 323, no. 1, pp. 48–51, 2010.
mla: Trunov, K., et al. “(100) GaAs/AlxGa1−xAs Heterostructures for Zeeman Spin
Splitting Studies of Hole Quantum Wires.” Journal of Crystal Growth, vol.
323, no. 1, Elsevier BV, 2010, pp. 48–51, doi:10.1016/j.jcrysgro.2010.11.060.
short: K. Trunov, D. Reuter, A. Ludwig, J.C.H. Chen, O. Klochan, A.P. Micolich,
A.R. Hamilton, A.D. Wieck, Journal of Crystal Growth 323 (2010) 48–51.
date_created: 2019-02-14T10:21:54Z
date_updated: 2022-01-06T07:03:45Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.jcrysgro.2010.11.060
intvolume: ' 323'
issue: '1'
language:
- iso: eng
page: 48-51
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: (100) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies of
hole quantum wires
type: journal_article
user_id: '42514'
volume: 323
year: '2010'
...
---
_id: '4144'
abstract:
- lang: eng
text: "Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on
nano-patterned 3C-SiC/Si \r\n(0 0 1)substrates with negligible hexagonal content
and less defect density than in planar cubic GaN layers.Nano-patterning of 3C-SiC/Si(001)
is achieved by self-ordered colloidal masks for the first time. The method presented
here offers the possibility to create nano-patterned cubic GaN without the need
for a GaN etching process andt hus isa potential alternative to the conventional
top–down fabrication techniques."
article_type: original
author:
- first_name: R.M.
full_name: Kemper, R.M.
last_name: Kemper
- first_name: M.
full_name: Weinl, M.
last_name: Weinl
- first_name: C.
full_name: Mietze, C.
last_name: Mietze
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: T.
full_name: Schupp, T.
last_name: Schupp
- first_name: E.
full_name: Tschumak, E.
last_name: Tschumak
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: 'Donald '
full_name: 'As, Donald '
last_name: As
citation:
ama: Kemper RM, Weinl M, Mietze C, et al. Growth of cubic GaN on nano-patterned
3C-SiC/Si (001) substrates. Journal of Crystal Growth. 2010;323(1):84-87.
doi:10.1016/j.jcrysgro.2010.12.042
apa: Kemper, R. M., Weinl, M., Mietze, C., Häberlen, M., Schupp, T., Tschumak, E.,
… As, D. (2010). Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates.
Journal of Crystal Growth, 323(1), 84–87. https://doi.org/10.1016/j.jcrysgro.2010.12.042
bibtex: '@article{Kemper_Weinl_Mietze_Häberlen_Schupp_Tschumak_Lindner_Lischka_As_2010,
title={Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates}, volume={323},
DOI={10.1016/j.jcrysgro.2010.12.042},
number={1}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Kemper,
R.M. and Weinl, M. and Mietze, C. and Häberlen, M. and Schupp, T. and Tschumak,
E. and Lindner, Jörg and Lischka, K. and As, Donald }, year={2010}, pages={84–87}
}'
chicago: 'Kemper, R.M., M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak,
Jörg Lindner, K. Lischka, and Donald As. “Growth of Cubic GaN on Nano-Patterned
3C-SiC/Si (001) Substrates.” Journal of Crystal Growth 323, no. 1 (2010):
84–87. https://doi.org/10.1016/j.jcrysgro.2010.12.042.'
ieee: R. M. Kemper et al., “Growth of cubic GaN on nano-patterned 3C-SiC/Si
(001) substrates,” Journal of Crystal Growth, vol. 323, no. 1, pp. 84–87,
2010.
mla: Kemper, R. M., et al. “Growth of Cubic GaN on Nano-Patterned 3C-SiC/Si (001)
Substrates.” Journal of Crystal Growth, vol. 323, no. 1, Elsevier BV, 2010,
pp. 84–87, doi:10.1016/j.jcrysgro.2010.12.042.
short: R.M. Kemper, M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, J.
Lindner, K. Lischka, D. As, Journal of Crystal Growth 323 (2010) 84–87.
date_created: 2018-08-27T12:34:33Z
date_updated: 2022-01-06T07:00:24Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1016/j.jcrysgro.2010.12.042
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T12:35:32Z
date_updated: 2018-08-27T12:35:32Z
file_id: '4145'
file_name: Growth of cubic GaN on nano-patterned 3C-SiC (001) substrates.pdf
file_size: 665964
relation: main_file
success: 1
file_date_updated: 2018-08-27T12:35:32Z
has_accepted_license: '1'
intvolume: ' 323'
issue: '1'
language:
- iso: eng
page: 84-87
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates
type: journal_article
user_id: '55706'
volume: 323
year: '2010'
...
---
_id: '4214'
abstract:
- lang: eng
text: "Non-polar a -plane (1 1 2 ̄ 0) GaN films were grown on r-plane sapphire by
metal–organic vapor phase epitaxy and were subsequently annealed for 90 min at
1070°C. Most dislocations were partial\r\ndislocations, which terminated basal
plane stacking faults. Prior to annealing, these dislocations were\r\nrandomly
distributed. After annealing, these dislocations moved into arrays oriented along
the [0 0 0 1]\r\ndirection and aligned perpendicular to the film–substrate interface
throughout their length, although\r\nthe total dislocation density remained unchanged.
These changes were accompanied by broadening of\r\nthe symmetric X-ray diffraction
1 1 2 ̄ 0 w-scan widths. The mechanism of movement was identified as\r\ndislocation
glide, occurring due to highly anisotropic stresses (confirmed by X-ray diffraction
lattice\r\nparameter measurements) and evidenced by macroscopic slip bands observed
on the sample surface.\r\nThere was also an increase in the density of unintentionally
n-type doped electrically conductive\r\ninclined features present at the film–substrate
interface (as observed in cross-section using scanning\r\ncapacitance microscopy),
suggesting out-diffusion of impurities from the substrate along with prismatic\r\nstacking
faults. These data suggest that annealing processes performed close to film growth\r\ntemperatures
can affect both the microstructure and the electrical properties of non-polar
GaN films."
article_type: original
author:
- first_name: Rui
full_name: Hao, Rui
last_name: Hao
- first_name: T.
full_name: Zhu, T.
last_name: Zhu
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: T.Y.
full_name: Chang, T.Y.
last_name: Chang
- first_name: M.J.
full_name: Kappers, M.J.
last_name: Kappers
- first_name: R.A.
full_name: Oliver, R.A.
last_name: Oliver
- first_name: C.J.
full_name: Humphreys, C.J.
last_name: Humphreys
- first_name: M.A.
full_name: Moram, M.A.
last_name: Moram
citation:
ama: Hao R, Zhu T, Häberlen M, et al. The effects of annealing on non-polar (112¯0)
a-plane GaN films. Journal of Crystal Growth. 2010;312(23):3536-3543. doi:10.1016/j.jcrysgro.2010.08.041
apa: Hao, R., Zhu, T., Häberlen, M., Chang, T. Y., Kappers, M. J., Oliver, R. A.,
… Moram, M. A. (2010). The effects of annealing on non-polar (112¯0) a-plane GaN
films. Journal of Crystal Growth, 312(23), 3536–3543. https://doi.org/10.1016/j.jcrysgro.2010.08.041
bibtex: '@article{Hao_Zhu_Häberlen_Chang_Kappers_Oliver_Humphreys_Moram_2010, title={The
effects of annealing on non-polar (112¯0) a-plane GaN films}, volume={312}, DOI={10.1016/j.jcrysgro.2010.08.041},
number={23}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Hao,
Rui and Zhu, T. and Häberlen, M. and Chang, T.Y. and Kappers, M.J. and Oliver,
R.A. and Humphreys, C.J. and Moram, M.A.}, year={2010}, pages={3536–3543} }'
chicago: 'Hao, Rui, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver,
C.J. Humphreys, and M.A. Moram. “The Effects of Annealing on Non-Polar (112¯0)
a-Plane GaN Films.” Journal of Crystal Growth 312, no. 23 (2010): 3536–43.
https://doi.org/10.1016/j.jcrysgro.2010.08.041.'
ieee: R. Hao et al., “The effects of annealing on non-polar (112¯0) a-plane
GaN films,” Journal of Crystal Growth, vol. 312, no. 23, pp. 3536–3543,
2010.
mla: Hao, Rui, et al. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN
Films.” Journal of Crystal Growth, vol. 312, no. 23, Elsevier BV, 2010,
pp. 3536–43, doi:10.1016/j.jcrysgro.2010.08.041.
short: R. Hao, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J.
Humphreys, M.A. Moram, Journal of Crystal Growth 312 (2010) 3536–3543.
date_created: 2018-08-28T12:49:39Z
date_updated: 2022-01-06T07:00:37Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1016/j.jcrysgro.2010.08.041
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:50:07Z
date_updated: 2018-08-28T12:50:07Z
file_id: '4215'
file_name: The effects of annealing on non-polar (11-20) a-plane GaN films.pdf
file_size: 1218752
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:50:07Z
has_accepted_license: '1'
intvolume: ' 312'
issue: '23'
language:
- iso: eng
page: 3536-3543
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: The effects of annealing on non-polar (112¯0) a-plane GaN films
type: journal_article
user_id: '55706'
volume: 312
year: '2010'
...
---
_id: '13830'
author:
- first_name: E.
full_name: Rauls, E.
last_name: Rauls
- first_name: J.
full_name: Wiebe, J.
last_name: Wiebe
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
citation:
ama: Rauls E, Wiebe J, Schmidt WG. Understanding the cubic AlN growth plane from
first principles. Journal of Crystal Growth. 2010;312:2892-2895. doi:10.1016/j.jcrysgro.2010.07.027
apa: Rauls, E., Wiebe, J., & Schmidt, W. G. (2010). Understanding the cubic
AlN growth plane from first principles. Journal of Crystal Growth, 312,
2892–2895. https://doi.org/10.1016/j.jcrysgro.2010.07.027
bibtex: '@article{Rauls_Wiebe_Schmidt_2010, title={Understanding the cubic AlN growth
plane from first principles}, volume={312}, DOI={10.1016/j.jcrysgro.2010.07.027},
journal={Journal of Crystal Growth}, author={Rauls, E. and Wiebe, J. and Schmidt,
Wolf Gero}, year={2010}, pages={2892–2895} }'
chicago: 'Rauls, E., J. Wiebe, and Wolf Gero Schmidt. “Understanding the Cubic AlN
Growth Plane from First Principles.” Journal of Crystal Growth 312 (2010):
2892–95. https://doi.org/10.1016/j.jcrysgro.2010.07.027.'
ieee: 'E. Rauls, J. Wiebe, and W. G. Schmidt, “Understanding the cubic AlN growth
plane from first principles,” Journal of Crystal Growth, vol. 312, pp.
2892–2895, 2010, doi: 10.1016/j.jcrysgro.2010.07.027.'
mla: Rauls, E., et al. “Understanding the Cubic AlN Growth Plane from First Principles.”
Journal of Crystal Growth, vol. 312, 2010, pp. 2892–95, doi:10.1016/j.jcrysgro.2010.07.027.
short: E. Rauls, J. Wiebe, W.G. Schmidt, Journal of Crystal Growth 312 (2010) 2892–2895.
date_created: 2019-10-15T07:34:48Z
date_updated: 2025-12-16T07:49:01Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '35'
- _id: '230'
doi: 10.1016/j.jcrysgro.2010.07.027
funded_apc: '1'
intvolume: ' 312'
language:
- iso: eng
page: 2892-2895
project:
- _id: '52'
name: Computing Resources Provided by the Paderborn Center for Parallel Computing
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
status: public
title: Understanding the cubic AlN growth plane from first principles
type: journal_article
user_id: '16199'
volume: 312
year: '2010'
...
---
_id: '4192'
abstract:
- lang: eng
text: "Buried ion beam synthesized 3C-SiC layers were revealed to the surface of
silicon wafers to provide lattice matched substrates for GaN thin film epitaxy.
Both epitaxial SiC/Si(1 1 1) and SiC/Si(0 0 1) growth surfaces with either six-
or four-fold crystal symmetry, respectively, were formed. GaN thin film growth
was achieved by ion beam assisted molecular beam epitaxy (IBA–MBE) which – owing
to the energy and momentum transfer of the ions – allows to deposit epitaxial
thin films at particularly low growth temperatures where both the stable hexagonal
and the metastable cubic polytype of GaN can be formed. It is shown by X-ray diffraction
(XRD) and cross-sectional transmission electron microscopy (XTEM) that using appropriate
fluxes of Ga atoms both purely hexagonal and purely cubic GaN films can\r\nbe
grown epitaxially on SiC/Si(1 1 1) and SiC/Si(0 0 1), respectively. Thereby Ga
rich growth conditions seem to stabilize the formation of the cubic polytype.
It is obvious from XTEM studies that the high density of crystal defects in the
SiC layer is not transferred onto the growing GaN films and that the crystalline
quality of GaN films improves with increasing film thickness. The influence of
surface roughness and wettability, interfacial cavities and the nucleation of
twin-type defects at the GaN/SiC interface on the crystalline quality of the GaN
thin films is discussed."
article_type: original
author:
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: J.W.
full_name: Gerlach, J.W.
last_name: Gerlach
- first_name: B.
full_name: Murphy, B.
last_name: Murphy
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
citation:
ama: Häberlen M, Gerlach JW, Murphy B, Lindner J, Stritzker B. Structural characterization
of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. Journal of
Crystal Growth. 2009;312(6):762-769. doi:10.1016/j.jcrysgro.2009.12.048
apa: Häberlen, M., Gerlach, J. W., Murphy, B., Lindner, J., & Stritzker, B.
(2009). Structural characterization of cubic and hexagonal GaN thin films grown
by IBA–MBE on SiC/Si. Journal of Crystal Growth, 312(6), 762–769.
https://doi.org/10.1016/j.jcrysgro.2009.12.048
bibtex: '@article{Häberlen_Gerlach_Murphy_Lindner_Stritzker_2009, title={Structural
characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si},
volume={312}, DOI={10.1016/j.jcrysgro.2009.12.048},
number={6}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Häberlen,
M. and Gerlach, J.W. and Murphy, B. and Lindner, Jörg and Stritzker, B.}, year={2009},
pages={762–769} }'
chicago: 'Häberlen, M., J.W. Gerlach, B. Murphy, Jörg Lindner, and B. Stritzker.
“Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE
on SiC/Si.” Journal of Crystal Growth 312, no. 6 (2009): 762–69. https://doi.org/10.1016/j.jcrysgro.2009.12.048.'
ieee: M. Häberlen, J. W. Gerlach, B. Murphy, J. Lindner, and B. Stritzker, “Structural
characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si,”
Journal of Crystal Growth, vol. 312, no. 6, pp. 762–769, 2009.
mla: Häberlen, M., et al. “Structural Characterization of Cubic and Hexagonal GaN
Thin Films Grown by IBA–MBE on SiC/Si.” Journal of Crystal Growth, vol.
312, no. 6, Elsevier BV, 2009, pp. 762–69, doi:10.1016/j.jcrysgro.2009.12.048.
short: M. Häberlen, J.W. Gerlach, B. Murphy, J. Lindner, B. Stritzker, Journal of
Crystal Growth 312 (2009) 762–769.
date_created: 2018-08-28T11:50:05Z
date_updated: 2022-01-06T07:00:32Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1016/j.jcrysgro.2009.12.048
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T11:50:45Z
date_updated: 2018-08-28T11:50:45Z
file_id: '4193'
file_name: Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown
by IBA-MBE on SiC-Si.pdf
file_size: 828431
relation: main_file
success: 1
file_date_updated: 2018-08-28T11:50:45Z
has_accepted_license: '1'
intvolume: ' 312'
issue: '6'
language:
- iso: eng
page: 762-769
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Structural characterization of cubic and hexagonal GaN thin films grown by
IBA–MBE on SiC/Si
type: journal_article
user_id: '55706'
volume: 312
year: '2009'
...
---
_id: '7646'
author:
- first_name: I.
full_name: Regolin, I.
last_name: Regolin
- first_name: D.
full_name: Sudfeld, D.
last_name: Sudfeld
- first_name: S.
full_name: Lüttjohann, S.
last_name: Lüttjohann
- first_name: V.
full_name: Khorenko, V.
last_name: Khorenko
- first_name: W.
full_name: Prost, W.
last_name: Prost
- first_name: J.
full_name: Kästner, J.
last_name: Kästner
- first_name: G.
full_name: Dumpich, G.
last_name: Dumpich
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: F.-J.
full_name: Tegude, F.-J.
last_name: Tegude
citation:
ama: Regolin I, Sudfeld D, Lüttjohann S, et al. Growth and characterisation of GaAs/InGaAs/GaAs
nanowhiskers on (111) GaAs. Journal of Crystal Growth. 2006;298:607-611.
doi:10.1016/j.jcrysgro.2006.10.122
apa: Regolin, I., Sudfeld, D., Lüttjohann, S., Khorenko, V., Prost, W., Kästner,
J., … Tegude, F.-J. (2006). Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers
on (111) GaAs. Journal of Crystal Growth, 298, 607–611. https://doi.org/10.1016/j.jcrysgro.2006.10.122
bibtex: '@article{Regolin_Sudfeld_Lüttjohann_Khorenko_Prost_Kästner_Dumpich_Meier_Lorke_Tegude_2006,
title={Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs},
volume={298}, DOI={10.1016/j.jcrysgro.2006.10.122},
journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Regolin,
I. and Sudfeld, D. and Lüttjohann, S. and Khorenko, V. and Prost, W. and Kästner,
J. and Dumpich, G. and Meier, Cedrik and Lorke, A. and Tegude, F.-J.}, year={2006},
pages={607–611} }'
chicago: 'Regolin, I., D. Sudfeld, S. Lüttjohann, V. Khorenko, W. Prost, J. Kästner,
G. Dumpich, Cedrik Meier, A. Lorke, and F.-J. Tegude. “Growth and Characterisation
of GaAs/InGaAs/GaAs Nanowhiskers on (111) GaAs.” Journal of Crystal Growth
298 (2006): 607–11. https://doi.org/10.1016/j.jcrysgro.2006.10.122.'
ieee: I. Regolin et al., “Growth and characterisation of GaAs/InGaAs/GaAs
nanowhiskers on (111) GaAs,” Journal of Crystal Growth, vol. 298, pp. 607–611,
2006.
mla: Regolin, I., et al. “Growth and Characterisation of GaAs/InGaAs/GaAs Nanowhiskers
on (111) GaAs.” Journal of Crystal Growth, vol. 298, Elsevier BV, 2006,
pp. 607–11, doi:10.1016/j.jcrysgro.2006.10.122.
short: I. Regolin, D. Sudfeld, S. Lüttjohann, V. Khorenko, W. Prost, J. Kästner,
G. Dumpich, C. Meier, A. Lorke, F.-J. Tegude, Journal of Crystal Growth 298 (2006)
607–611.
date_created: 2019-02-13T11:36:42Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1016/j.jcrysgro.2006.10.122
extern: '1'
intvolume: ' 298'
language:
- iso: eng
page: 607-611
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs
type: journal_article
user_id: '20798'
volume: 298
year: '2006'
...
---
_id: '8664'
author:
- first_name: J.L.
full_name: Yang, J.L.
last_name: Yang
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A.D.
full_name: Wieck, A.D.
last_name: Wieck
citation:
ama: Yang JL, Reuter D, Wieck AD. Sticking behavior of the dopants Si, C, and Be
upon re-evaporation of individually doped GaAs(100). Journal of Crystal Growth.
2006:278-284. doi:10.1016/j.jcrysgro.2006.05.051
apa: Yang, J. L., Reuter, D., & Wieck, A. D. (2006). Sticking behavior of the
dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100). Journal
of Crystal Growth, 278–284. https://doi.org/10.1016/j.jcrysgro.2006.05.051
bibtex: '@article{Yang_Reuter_Wieck_2006, title={Sticking behavior of the dopants
Si, C, and Be upon re-evaporation of individually doped GaAs(100)}, DOI={10.1016/j.jcrysgro.2006.05.051},
journal={Journal of Crystal Growth}, author={Yang, J.L. and Reuter, Dirk and Wieck,
A.D.}, year={2006}, pages={278–284} }'
chicago: Yang, J.L., Dirk Reuter, and A.D. Wieck. “Sticking Behavior of the Dopants
Si, C, and Be upon Re-Evaporation of Individually Doped GaAs(100).” Journal
of Crystal Growth, 2006, 278–84. https://doi.org/10.1016/j.jcrysgro.2006.05.051.
ieee: J. L. Yang, D. Reuter, and A. D. Wieck, “Sticking behavior of the dopants
Si, C, and Be upon re-evaporation of individually doped GaAs(100),” Journal
of Crystal Growth, pp. 278–284, 2006.
mla: Yang, J. L., et al. “Sticking Behavior of the Dopants Si, C, and Be upon Re-Evaporation
of Individually Doped GaAs(100).” Journal of Crystal Growth, 2006, pp.
278–84, doi:10.1016/j.jcrysgro.2006.05.051.
short: J.L. Yang, D. Reuter, A.D. Wieck, Journal of Crystal Growth (2006) 278–284.
date_created: 2019-03-27T08:39:18Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.jcrysgro.2006.05.051
language:
- iso: eng
page: 278-284
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
status: public
title: Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually
doped GaAs(100)
type: journal_article
user_id: '42514'
year: '2006'
...