---
_id: '32108'
article_number: '126756'
author:
- first_name: T.
  full_name: Henksmeier, T.
  last_name: Henksmeier
- first_name: J.F.
  full_name: Schulz, J.F.
  last_name: Schulz
- first_name: E.
  full_name: Kluth, E.
  last_name: Kluth
- first_name: M.
  full_name: Feneberg, M.
  last_name: Feneberg
- first_name: R.
  full_name: Goldhahn, R.
  last_name: Goldhahn
- first_name: A.M.
  full_name: Sanchez, A.M.
  last_name: Sanchez
- first_name: M.
  full_name: Voigt, M.
  last_name: Voigt
- first_name: Guido
  full_name: Grundmeier, Guido
  id: '194'
  last_name: Grundmeier
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
citation:
  ama: Henksmeier T, Schulz JF, Kluth E, et al. Remote epitaxy of InxGa1-xAs (0 0
    1) on graphene covered GaAs(0 0 1) substrates. <i>Journal of Crystal Growth</i>.
    2022;593. doi:<a href="https://doi.org/10.1016/j.jcrysgro.2022.126756">10.1016/j.jcrysgro.2022.126756</a>
  apa: Henksmeier, T., Schulz, J. F., Kluth, E., Feneberg, M., Goldhahn, R., Sanchez,
    A. M., Voigt, M., Grundmeier, G., &#38; Reuter, D. (2022). Remote epitaxy of InxGa1-xAs
    (0 0 1) on graphene covered GaAs(0 0 1) substrates. <i>Journal of Crystal Growth</i>,
    <i>593</i>, Article 126756. <a href="https://doi.org/10.1016/j.jcrysgro.2022.126756">https://doi.org/10.1016/j.jcrysgro.2022.126756</a>
  bibtex: '@article{Henksmeier_Schulz_Kluth_Feneberg_Goldhahn_Sanchez_Voigt_Grundmeier_Reuter_2022,
    title={Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates},
    volume={593}, DOI={<a href="https://doi.org/10.1016/j.jcrysgro.2022.126756">10.1016/j.jcrysgro.2022.126756</a>},
    number={126756}, journal={Journal of Crystal Growth}, publisher={Elsevier BV},
    author={Henksmeier, T. and Schulz, J.F. and Kluth, E. and Feneberg, M. and Goldhahn,
    R. and Sanchez, A.M. and Voigt, M. and Grundmeier, Guido and Reuter, Dirk}, year={2022}
    }'
  chicago: Henksmeier, T., J.F. Schulz, E. Kluth, M. Feneberg, R. Goldhahn, A.M. Sanchez,
    M. Voigt, Guido Grundmeier, and Dirk Reuter. “Remote Epitaxy of InxGa1-XAs (0
    0 1) on Graphene Covered GaAs(0 0 1) Substrates.” <i>Journal of Crystal Growth</i>
    593 (2022). <a href="https://doi.org/10.1016/j.jcrysgro.2022.126756">https://doi.org/10.1016/j.jcrysgro.2022.126756</a>.
  ieee: 'T. Henksmeier <i>et al.</i>, “Remote epitaxy of InxGa1-xAs (0 0 1) on graphene
    covered GaAs(0 0 1) substrates,” <i>Journal of Crystal Growth</i>, vol. 593, Art.
    no. 126756, 2022, doi: <a href="https://doi.org/10.1016/j.jcrysgro.2022.126756">10.1016/j.jcrysgro.2022.126756</a>.'
  mla: Henksmeier, T., et al. “Remote Epitaxy of InxGa1-XAs (0 0 1) on Graphene Covered
    GaAs(0 0 1) Substrates.” <i>Journal of Crystal Growth</i>, vol. 593, 126756, Elsevier
    BV, 2022, doi:<a href="https://doi.org/10.1016/j.jcrysgro.2022.126756">10.1016/j.jcrysgro.2022.126756</a>.
  short: T. Henksmeier, J.F. Schulz, E. Kluth, M. Feneberg, R. Goldhahn, A.M. Sanchez,
    M. Voigt, G. Grundmeier, D. Reuter, Journal of Crystal Growth 593 (2022).
date_created: 2022-06-23T06:17:32Z
date_updated: 2022-06-23T06:18:32Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.jcrysgro.2022.126756
intvolume: '       593'
keyword:
- Materials Chemistry
- Inorganic Chemistry
- Condensed Matter Physics
language:
- iso: eng
publication: Journal of Crystal Growth
publication_identifier:
  issn:
  - 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates
type: journal_article
user_id: '42514'
volume: 593
year: '2022'
...
---
_id: '31241'
article_number: '126715'
author:
- first_name: A.K.
  full_name: Verma, A.K.
  last_name: Verma
- first_name: F.
  full_name: Bopp, F.
  last_name: Bopp
- first_name: J.J.
  full_name: Finley, J.J.
  last_name: Finley
- first_name: B.
  full_name: Jonas, B.
  last_name: Jonas
- first_name: A.
  full_name: Zrenner, A.
  last_name: Zrenner
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
citation:
  ama: Verma AK, Bopp F, Finley JJ, Jonas B, Zrenner A, Reuter D. Low Areal Densities
    of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam Epitaxy. <i>Journal
    of Crystal Growth</i>. Published online 2022. doi:<a href="https://doi.org/10.1016/j.jcrysgro.2022.126715">10.1016/j.jcrysgro.2022.126715</a>
  apa: Verma, A. K., Bopp, F., Finley, J. J., Jonas, B., Zrenner, A., &#38; Reuter,
    D. (2022). Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular
    Beam Epitaxy. <i>Journal of Crystal Growth</i>, Article 126715. <a href="https://doi.org/10.1016/j.jcrysgro.2022.126715">https://doi.org/10.1016/j.jcrysgro.2022.126715</a>
  bibtex: '@article{Verma_Bopp_Finley_Jonas_Zrenner_Reuter_2022, title={Low Areal
    Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam Epitaxy},
    DOI={<a href="https://doi.org/10.1016/j.jcrysgro.2022.126715">10.1016/j.jcrysgro.2022.126715</a>},
    number={126715}, journal={Journal of Crystal Growth}, publisher={Elsevier BV},
    author={Verma, A.K. and Bopp, F. and Finley, J.J. and Jonas, B. and Zrenner, A.
    and Reuter, Dirk}, year={2022} }'
  chicago: Verma, A.K., F. Bopp, J.J. Finley, B. Jonas, A. Zrenner, and Dirk Reuter.
    “Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam
    Epitaxy.” <i>Journal of Crystal Growth</i>, 2022. <a href="https://doi.org/10.1016/j.jcrysgro.2022.126715">https://doi.org/10.1016/j.jcrysgro.2022.126715</a>.
  ieee: 'A. K. Verma, F. Bopp, J. J. Finley, B. Jonas, A. Zrenner, and D. Reuter,
    “Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam
    Epitaxy,” <i>Journal of Crystal Growth</i>, Art. no. 126715, 2022, doi: <a href="https://doi.org/10.1016/j.jcrysgro.2022.126715">10.1016/j.jcrysgro.2022.126715</a>.'
  mla: Verma, A. K., et al. “Low Areal Densities of InAs Quantum Dots on GaAs(100)
    Prepared by Molecular Beam Epitaxy.” <i>Journal of Crystal Growth</i>, 126715,
    Elsevier BV, 2022, doi:<a href="https://doi.org/10.1016/j.jcrysgro.2022.126715">10.1016/j.jcrysgro.2022.126715</a>.
  short: A.K. Verma, F. Bopp, J.J. Finley, B. Jonas, A. Zrenner, D. Reuter, Journal
    of Crystal Growth (2022).
date_created: 2022-05-13T06:11:50Z
date_updated: 2022-05-13T06:12:40Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.jcrysgro.2022.126715
keyword:
- Materials Chemistry
- Inorganic Chemistry
- Condensed Matter Physics
language:
- iso: eng
publication: Journal of Crystal Growth
publication_identifier:
  issn:
  - 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular
  Beam Epitaxy
type: journal_article
user_id: '42514'
year: '2022'
...
---
_id: '20900'
article_number: '126009'
author:
- first_name: M.
  full_name: Albert, M.
  last_name: Albert
- first_name: C.
  full_name: Golla, C.
  last_name: Golla
- first_name: Cedrik
  full_name: Meier, Cedrik
  id: '20798'
  last_name: Meier
  orcid: https://orcid.org/0000-0002-3787-3572
citation:
  ama: Albert M, Golla C, Meier C. Optical in-situ temperature management for high-quality
    ZnO molecular beam epitaxy. <i>Journal of Crystal Growth</i>. 2021;557. doi:<a
    href="https://doi.org/10.1016/j.jcrysgro.2020.126009">10.1016/j.jcrysgro.2020.126009</a>
  apa: Albert, M., Golla, C., &#38; Meier, C. (2021). Optical in-situ temperature
    management for high-quality ZnO molecular beam epitaxy. <i>Journal of Crystal
    Growth</i>, <i>557</i>. <a href="https://doi.org/10.1016/j.jcrysgro.2020.126009">https://doi.org/10.1016/j.jcrysgro.2020.126009</a>
  bibtex: '@article{Albert_Golla_Meier_2021, title={Optical in-situ temperature management
    for high-quality ZnO molecular beam epitaxy}, volume={557}, DOI={<a href="https://doi.org/10.1016/j.jcrysgro.2020.126009">10.1016/j.jcrysgro.2020.126009</a>},
    number={126009}, journal={Journal of Crystal Growth}, author={Albert, M. and Golla,
    C. and Meier, Cedrik}, year={2021} }'
  chicago: Albert, M., C. Golla, and Cedrik Meier. “Optical In-Situ Temperature Management
    for High-Quality ZnO Molecular Beam Epitaxy.” <i>Journal of Crystal Growth</i>
    557 (2021). <a href="https://doi.org/10.1016/j.jcrysgro.2020.126009">https://doi.org/10.1016/j.jcrysgro.2020.126009</a>.
  ieee: M. Albert, C. Golla, and C. Meier, “Optical in-situ temperature management
    for high-quality ZnO molecular beam epitaxy,” <i>Journal of Crystal Growth</i>,
    vol. 557, 2021.
  mla: Albert, M., et al. “Optical In-Situ Temperature Management for High-Quality
    ZnO Molecular Beam Epitaxy.” <i>Journal of Crystal Growth</i>, vol. 557, 126009,
    2021, doi:<a href="https://doi.org/10.1016/j.jcrysgro.2020.126009">10.1016/j.jcrysgro.2020.126009</a>.
  short: M. Albert, C. Golla, C. Meier, Journal of Crystal Growth 557 (2021).
date_created: 2021-01-12T13:52:31Z
date_updated: 2022-01-06T06:54:41Z
department:
- _id: '15'
- _id: '230'
- _id: '429'
doi: 10.1016/j.jcrysgro.2020.126009
intvolume: '       557'
language:
- iso: eng
project:
- _id: '53'
  name: TRR 142
- _id: '55'
  name: TRR 142 - Project Area B
- _id: '66'
  name: TRR 142 - Subproject B1
publication: Journal of Crystal Growth
publication_identifier:
  issn:
  - 0022-0248
publication_status: published
status: public
title: Optical in-situ temperature management for high-quality ZnO molecular beam
  epitaxy
type: journal_article
user_id: '20798'
volume: 557
year: '2021'
...
---
_id: '17434'
article_number: '125597'
author:
- first_name: Vinay S.
  full_name: Kunnathully, Vinay S.
  last_name: Kunnathully
- first_name: Thomas
  full_name: Riedl, Thomas
  last_name: Riedl
- first_name: Alexander
  full_name: Trapp, Alexander
  last_name: Trapp
- first_name: Timo
  full_name: Langer, Timo
  last_name: Langer
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: Jörg K.N.
  full_name: Lindner, Jörg K.N.
  last_name: Lindner
citation:
  ama: Kunnathully VS, Riedl T, Trapp A, Langer T, Reuter D, Lindner JKN. InAs heteroepitaxy
    on nanopillar-patterned GaAs (111)A. <i>Journal of Crystal Growth</i>. 2020. doi:<a
    href="https://doi.org/10.1016/j.jcrysgro.2020.125597">10.1016/j.jcrysgro.2020.125597</a>
  apa: Kunnathully, V. S., Riedl, T., Trapp, A., Langer, T., Reuter, D., &#38; Lindner,
    J. K. N. (2020). InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. <i>Journal
    of Crystal Growth</i>. <a href="https://doi.org/10.1016/j.jcrysgro.2020.125597">https://doi.org/10.1016/j.jcrysgro.2020.125597</a>
  bibtex: '@article{Kunnathully_Riedl_Trapp_Langer_Reuter_Lindner_2020, title={InAs
    heteroepitaxy on nanopillar-patterned GaAs (111)A}, DOI={<a href="https://doi.org/10.1016/j.jcrysgro.2020.125597">10.1016/j.jcrysgro.2020.125597</a>},
    number={125597}, journal={Journal of Crystal Growth}, author={Kunnathully, Vinay
    S. and Riedl, Thomas and Trapp, Alexander and Langer, Timo and Reuter, Dirk and
    Lindner, Jörg K.N.}, year={2020} }'
  chicago: Kunnathully, Vinay S., Thomas Riedl, Alexander Trapp, Timo Langer, Dirk
    Reuter, and Jörg K.N. Lindner. “InAs Heteroepitaxy on Nanopillar-Patterned GaAs
    (111)A.” <i>Journal of Crystal Growth</i>, 2020. <a href="https://doi.org/10.1016/j.jcrysgro.2020.125597">https://doi.org/10.1016/j.jcrysgro.2020.125597</a>.
  ieee: V. S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, and J. K. N.
    Lindner, “InAs heteroepitaxy on nanopillar-patterned GaAs (111)A,” <i>Journal
    of Crystal Growth</i>, 2020.
  mla: Kunnathully, Vinay S., et al. “InAs Heteroepitaxy on Nanopillar-Patterned GaAs
    (111)A.” <i>Journal of Crystal Growth</i>, 125597, 2020, doi:<a href="https://doi.org/10.1016/j.jcrysgro.2020.125597">10.1016/j.jcrysgro.2020.125597</a>.
  short: V.S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, J.K.N. Lindner,
    Journal of Crystal Growth (2020).
date_created: 2020-07-29T08:25:37Z
date_updated: 2022-01-06T06:53:12Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.jcrysgro.2020.125597
language:
- iso: eng
publication: Journal of Crystal Growth
publication_identifier:
  issn:
  - 0022-0248
publication_status: published
status: public
title: InAs heteroepitaxy on nanopillar-patterned GaAs (111)A
type: journal_article
user_id: '42514'
year: '2020'
...
---
_id: '34091'
article_number: '125597'
author:
- first_name: Vinay S.
  full_name: Kunnathully, Vinay S.
  last_name: Kunnathully
- first_name: Thomas
  full_name: Riedl, Thomas
  id: '36950'
  last_name: Riedl
- first_name: Alexander
  full_name: Trapp, Alexander
  last_name: Trapp
- first_name: Timo
  full_name: Langer, Timo
  last_name: Langer
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: Jörg
  full_name: Lindner, Jörg
  id: '20797'
  last_name: Lindner
citation:
  ama: Kunnathully VS, Riedl T, Trapp A, Langer T, Reuter D, Lindner J. InAs heteroepitaxy
    on nanopillar-patterned GaAs (111)A. <i>Journal of Crystal Growth</i>. 2020;537.
    doi:<a href="https://doi.org/10.1016/j.jcrysgro.2020.125597">10.1016/j.jcrysgro.2020.125597</a>
  apa: Kunnathully, V. S., Riedl, T., Trapp, A., Langer, T., Reuter, D., &#38; Lindner,
    J. (2020). InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. <i>Journal
    of Crystal Growth</i>, <i>537</i>, Article 125597. <a href="https://doi.org/10.1016/j.jcrysgro.2020.125597">https://doi.org/10.1016/j.jcrysgro.2020.125597</a>
  bibtex: '@article{Kunnathully_Riedl_Trapp_Langer_Reuter_Lindner_2020, title={InAs
    heteroepitaxy on nanopillar-patterned GaAs (111)A}, volume={537}, DOI={<a href="https://doi.org/10.1016/j.jcrysgro.2020.125597">10.1016/j.jcrysgro.2020.125597</a>},
    number={125597}, journal={Journal of Crystal Growth}, publisher={Elsevier BV},
    author={Kunnathully, Vinay S. and Riedl, Thomas and Trapp, Alexander and Langer,
    Timo and Reuter, Dirk and Lindner, Jörg}, year={2020} }'
  chicago: Kunnathully, Vinay S., Thomas Riedl, Alexander Trapp, Timo Langer, Dirk
    Reuter, and Jörg Lindner. “InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A.”
    <i>Journal of Crystal Growth</i> 537 (2020). <a href="https://doi.org/10.1016/j.jcrysgro.2020.125597">https://doi.org/10.1016/j.jcrysgro.2020.125597</a>.
  ieee: 'V. S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, and J. Lindner,
    “InAs heteroepitaxy on nanopillar-patterned GaAs (111)A,” <i>Journal of Crystal
    Growth</i>, vol. 537, Art. no. 125597, 2020, doi: <a href="https://doi.org/10.1016/j.jcrysgro.2020.125597">10.1016/j.jcrysgro.2020.125597</a>.'
  mla: Kunnathully, Vinay S., et al. “InAs Heteroepitaxy on Nanopillar-Patterned GaAs
    (111)A.” <i>Journal of Crystal Growth</i>, vol. 537, 125597, Elsevier BV, 2020,
    doi:<a href="https://doi.org/10.1016/j.jcrysgro.2020.125597">10.1016/j.jcrysgro.2020.125597</a>.
  short: V.S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, J. Lindner, Journal
    of Crystal Growth 537 (2020).
date_created: 2022-11-15T14:19:31Z
date_updated: 2023-01-10T12:13:05Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.jcrysgro.2020.125597
intvolume: '       537'
keyword:
- Materials Chemistry
- Inorganic Chemistry
- Condensed Matter Physics
language:
- iso: eng
publication: Journal of Crystal Growth
publication_identifier:
  issn:
  - 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: InAs heteroepitaxy on nanopillar-patterned GaAs (111)A
type: journal_article
user_id: '77496'
volume: 537
year: '2020'
...
---
_id: '7800'
author:
- first_name: Tobias
  full_name: Henksmeier, Tobias
  last_name: Henksmeier
- first_name: Stepan
  full_name: Shvarkov, Stepan
  last_name: Shvarkov
- first_name: Alexander
  full_name: Trapp, Alexander
  last_name: Trapp
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
citation:
  ama: Henksmeier T, Shvarkov S, Trapp A, Reuter D. Molecular beam epitaxy growth
    and temperature-dependent electrical characterization of carbon-doped GaAs on
    GaAs(1 1 1)B. <i>Journal of Crystal Growth</i>. 2019;512:164-168. doi:<a href="https://doi.org/10.1016/j.jcrysgro.2019.02.006">10.1016/j.jcrysgro.2019.02.006</a>
  apa: Henksmeier, T., Shvarkov, S., Trapp, A., &#38; Reuter, D. (2019). Molecular
    beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped
    GaAs on GaAs(1 1 1)B. <i>Journal of Crystal Growth</i>, <i>512</i>, 164–168. <a
    href="https://doi.org/10.1016/j.jcrysgro.2019.02.006">https://doi.org/10.1016/j.jcrysgro.2019.02.006</a>
  bibtex: '@article{Henksmeier_Shvarkov_Trapp_Reuter_2019, title={Molecular beam epitaxy
    growth and temperature-dependent electrical characterization of carbon-doped GaAs
    on GaAs(1 1 1)B}, volume={512}, DOI={<a href="https://doi.org/10.1016/j.jcrysgro.2019.02.006">10.1016/j.jcrysgro.2019.02.006</a>},
    journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Henksmeier,
    Tobias and Shvarkov, Stepan and Trapp, Alexander and Reuter, Dirk}, year={2019},
    pages={164–168} }'
  chicago: 'Henksmeier, Tobias, Stepan Shvarkov, Alexander Trapp, and Dirk Reuter.
    “Molecular Beam Epitaxy Growth and Temperature-Dependent Electrical Characterization
    of Carbon-Doped GaAs on GaAs(1 1 1)B.” <i>Journal of Crystal Growth</i> 512 (2019):
    164–68. <a href="https://doi.org/10.1016/j.jcrysgro.2019.02.006">https://doi.org/10.1016/j.jcrysgro.2019.02.006</a>.'
  ieee: T. Henksmeier, S. Shvarkov, A. Trapp, and D. Reuter, “Molecular beam epitaxy
    growth and temperature-dependent electrical characterization of carbon-doped GaAs
    on GaAs(1 1 1)B,” <i>Journal of Crystal Growth</i>, vol. 512, pp. 164–168, 2019.
  mla: Henksmeier, Tobias, et al. “Molecular Beam Epitaxy Growth and Temperature-Dependent
    Electrical Characterization of Carbon-Doped GaAs on GaAs(1 1 1)B.” <i>Journal
    of Crystal Growth</i>, vol. 512, Elsevier BV, 2019, pp. 164–68, doi:<a href="https://doi.org/10.1016/j.jcrysgro.2019.02.006">10.1016/j.jcrysgro.2019.02.006</a>.
  short: T. Henksmeier, S. Shvarkov, A. Trapp, D. Reuter, Journal of Crystal Growth
    512 (2019) 164–168.
date_created: 2019-02-20T07:37:27Z
date_updated: 2022-01-06T07:03:46Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.jcrysgro.2019.02.006
intvolume: '       512'
language:
- iso: eng
page: 164-168
publication: Journal of Crystal Growth
publication_identifier:
  issn:
  - 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Molecular beam epitaxy growth and temperature-dependent electrical characterization
  of carbon-doped GaAs on GaAs(1 1 1)B
type: journal_article
user_id: '42514'
volume: 512
year: '2019'
...
---
_id: '4810'
author:
- first_name: T.
  full_name: Wecker, T.
  last_name: Wecker
- first_name: T.
  full_name: Jostmeier, T.
  last_name: Jostmeier
- first_name: T.
  full_name: Rieger, T.
  last_name: Rieger
- first_name: E.
  full_name: Neumann, E.
  last_name: Neumann
- first_name: A.
  full_name: Pawlis, A.
  last_name: Pawlis
- first_name: M.
  full_name: Betz, M.
  last_name: Betz
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: Donat Josef
  full_name: As, Donat Josef
  id: '14'
  last_name: As
  orcid: 0000-0003-1121-3565
citation:
  ama: Wecker T, Jostmeier T, Rieger T, et al. Linear and nonlinear behaviour of near-IR
    intersubband transitions of cubic GaN/AlN multi quantum well structures. <i>Journal
    of Crystal Growth</i>. 2017;477:149-153. doi:<a href="https://doi.org/10.1016/j.jcrysgro.2017.01.022">10.1016/j.jcrysgro.2017.01.022</a>
  apa: Wecker, T., Jostmeier, T., Rieger, T., Neumann, E., Pawlis, A., Betz, M., …
    As, D. J. (2017). Linear and nonlinear behaviour of near-IR intersubband transitions
    of cubic GaN/AlN multi quantum well structures. <i>Journal of Crystal Growth</i>,
    <i>477</i>, 149–153. <a href="https://doi.org/10.1016/j.jcrysgro.2017.01.022">https://doi.org/10.1016/j.jcrysgro.2017.01.022</a>
  bibtex: '@article{Wecker_Jostmeier_Rieger_Neumann_Pawlis_Betz_Reuter_As_2017, title={Linear
    and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi
    quantum well structures}, volume={477}, DOI={<a href="https://doi.org/10.1016/j.jcrysgro.2017.01.022">10.1016/j.jcrysgro.2017.01.022</a>},
    journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Wecker,
    T. and Jostmeier, T. and Rieger, T. and Neumann, E. and Pawlis, A. and Betz, M.
    and Reuter, Dirk and As, Donat Josef}, year={2017}, pages={149–153} }'
  chicago: 'Wecker, T., T. Jostmeier, T. Rieger, E. Neumann, A. Pawlis, M. Betz, Dirk
    Reuter, and Donat Josef As. “Linear and Nonlinear Behaviour of Near-IR Intersubband
    Transitions of Cubic GaN/AlN Multi Quantum Well Structures.” <i>Journal of Crystal
    Growth</i> 477 (2017): 149–53. <a href="https://doi.org/10.1016/j.jcrysgro.2017.01.022">https://doi.org/10.1016/j.jcrysgro.2017.01.022</a>.'
  ieee: T. Wecker <i>et al.</i>, “Linear and nonlinear behaviour of near-IR intersubband
    transitions of cubic GaN/AlN multi quantum well structures,” <i>Journal of Crystal
    Growth</i>, vol. 477, pp. 149–153, 2017.
  mla: Wecker, T., et al. “Linear and Nonlinear Behaviour of Near-IR Intersubband
    Transitions of Cubic GaN/AlN Multi Quantum Well Structures.” <i>Journal of Crystal
    Growth</i>, vol. 477, Elsevier BV, 2017, pp. 149–53, doi:<a href="https://doi.org/10.1016/j.jcrysgro.2017.01.022">10.1016/j.jcrysgro.2017.01.022</a>.
  short: T. Wecker, T. Jostmeier, T. Rieger, E. Neumann, A. Pawlis, M. Betz, D. Reuter,
    D.J. As, Journal of Crystal Growth 477 (2017) 149–153.
date_created: 2018-10-24T08:02:12Z
date_updated: 2022-01-06T07:01:25Z
doi: 10.1016/j.jcrysgro.2017.01.022
intvolume: '       477'
page: 149-153
publication: Journal of Crystal Growth
publication_identifier:
  issn:
  - 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Linear and nonlinear behaviour of near-IR intersubband transitions of cubic
  GaN/AlN multi quantum well structures
type: journal_article
user_id: '14'
volume: 477
year: '2017'
...
---
_id: '7020'
author:
- first_name: Julian
  full_name: Ritzmann, Julian
  last_name: Ritzmann
- first_name: Rüdiger
  full_name: Schott, Rüdiger
  last_name: Schott
- first_name: Katherine
  full_name: Gross, Katherine
  last_name: Gross
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: Arne
  full_name: Ludwig, Arne
  last_name: Ludwig
- first_name: Andreas D.
  full_name: Wieck, Andreas D.
  last_name: Wieck
citation:
  ama: Ritzmann J, Schott R, Gross K, Reuter D, Ludwig A, Wieck AD. Overcoming Ehrlich-Schwöbel
    barrier in (1 1 1)A GaAs molecular beam epitaxy. <i>Journal of Crystal Growth</i>.
    2017;481:7-10. doi:<a href="https://doi.org/10.1016/j.jcrysgro.2017.10.029">10.1016/j.jcrysgro.2017.10.029</a>
  apa: Ritzmann, J., Schott, R., Gross, K., Reuter, D., Ludwig, A., &#38; Wieck, A.
    D. (2017). Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam
    epitaxy. <i>Journal of Crystal Growth</i>, <i>481</i>, 7–10. <a href="https://doi.org/10.1016/j.jcrysgro.2017.10.029">https://doi.org/10.1016/j.jcrysgro.2017.10.029</a>
  bibtex: '@article{Ritzmann_Schott_Gross_Reuter_Ludwig_Wieck_2017, title={Overcoming
    Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy}, volume={481},
    DOI={<a href="https://doi.org/10.1016/j.jcrysgro.2017.10.029">10.1016/j.jcrysgro.2017.10.029</a>},
    journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Ritzmann,
    Julian and Schott, Rüdiger and Gross, Katherine and Reuter, Dirk and Ludwig, Arne
    and Wieck, Andreas D.}, year={2017}, pages={7–10} }'
  chicago: 'Ritzmann, Julian, Rüdiger Schott, Katherine Gross, Dirk Reuter, Arne Ludwig,
    and Andreas D. Wieck. “Overcoming Ehrlich-Schwöbel Barrier in (1 1 1)A GaAs Molecular
    Beam Epitaxy.” <i>Journal of Crystal Growth</i> 481 (2017): 7–10. <a href="https://doi.org/10.1016/j.jcrysgro.2017.10.029">https://doi.org/10.1016/j.jcrysgro.2017.10.029</a>.'
  ieee: J. Ritzmann, R. Schott, K. Gross, D. Reuter, A. Ludwig, and A. D. Wieck, “Overcoming
    Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy,” <i>Journal
    of Crystal Growth</i>, vol. 481, pp. 7–10, 2017.
  mla: Ritzmann, Julian, et al. “Overcoming Ehrlich-Schwöbel Barrier in (1 1 1)A GaAs
    Molecular Beam Epitaxy.” <i>Journal of Crystal Growth</i>, vol. 481, Elsevier
    BV, 2017, pp. 7–10, doi:<a href="https://doi.org/10.1016/j.jcrysgro.2017.10.029">10.1016/j.jcrysgro.2017.10.029</a>.
  short: J. Ritzmann, R. Schott, K. Gross, D. Reuter, A. Ludwig, A.D. Wieck, Journal
    of Crystal Growth 481 (2017) 7–10.
date_created: 2019-01-28T09:35:48Z
date_updated: 2022-01-06T07:03:26Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.jcrysgro.2017.10.029
intvolume: '       481'
language:
- iso: eng
page: 7-10
publication: Journal of Crystal Growth
publication_identifier:
  issn:
  - 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy
type: journal_article
user_id: '42514'
volume: 481
year: '2017'
...
---
_id: '7027'
author:
- first_name: Sven
  full_name: Scholz, Sven
  last_name: Scholz
- first_name: Rüdiger
  full_name: Schott, Rüdiger
  last_name: Schott
- first_name: Patrick A.
  full_name: Labud, Patrick A.
  last_name: Labud
- first_name: Christoph
  full_name: Somsen, Christoph
  last_name: Somsen
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: Arne
  full_name: Ludwig, Arne
  last_name: Ludwig
- first_name: Andreas D.
  full_name: Wieck, Andreas D.
  last_name: Wieck
citation:
  ama: Scholz S, Schott R, Labud PA, et al. Focused ion beam supported growth of monocrystalline
    wurtzite InAs nanowires grown by molecular beam epitaxy. <i>Journal of Crystal
    Growth</i>. 2017;470:46-50. doi:<a href="https://doi.org/10.1016/j.jcrysgro.2017.04.013">10.1016/j.jcrysgro.2017.04.013</a>
  apa: Scholz, S., Schott, R., Labud, P. A., Somsen, C., Reuter, D., Ludwig, A., &#38;
    Wieck, A. D. (2017). Focused ion beam supported growth of monocrystalline wurtzite
    InAs nanowires grown by molecular beam epitaxy. <i>Journal of Crystal Growth</i>,
    <i>470</i>, 46–50. <a href="https://doi.org/10.1016/j.jcrysgro.2017.04.013">https://doi.org/10.1016/j.jcrysgro.2017.04.013</a>
  bibtex: '@article{Scholz_Schott_Labud_Somsen_Reuter_Ludwig_Wieck_2017, title={Focused
    ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by
    molecular beam epitaxy}, volume={470}, DOI={<a href="https://doi.org/10.1016/j.jcrysgro.2017.04.013">10.1016/j.jcrysgro.2017.04.013</a>},
    journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Scholz,
    Sven and Schott, Rüdiger and Labud, Patrick A. and Somsen, Christoph and Reuter,
    Dirk and Ludwig, Arne and Wieck, Andreas D.}, year={2017}, pages={46–50} }'
  chicago: 'Scholz, Sven, Rüdiger Schott, Patrick A. Labud, Christoph Somsen, Dirk
    Reuter, Arne Ludwig, and Andreas D. Wieck. “Focused Ion Beam Supported Growth
    of Monocrystalline Wurtzite InAs Nanowires Grown by Molecular Beam Epitaxy.” <i>Journal
    of Crystal Growth</i> 470 (2017): 46–50. <a href="https://doi.org/10.1016/j.jcrysgro.2017.04.013">https://doi.org/10.1016/j.jcrysgro.2017.04.013</a>.'
  ieee: S. Scholz <i>et al.</i>, “Focused ion beam supported growth of monocrystalline
    wurtzite InAs nanowires grown by molecular beam epitaxy,” <i>Journal of Crystal
    Growth</i>, vol. 470, pp. 46–50, 2017.
  mla: Scholz, Sven, et al. “Focused Ion Beam Supported Growth of Monocrystalline
    Wurtzite InAs Nanowires Grown by Molecular Beam Epitaxy.” <i>Journal of Crystal
    Growth</i>, vol. 470, Elsevier BV, 2017, pp. 46–50, doi:<a href="https://doi.org/10.1016/j.jcrysgro.2017.04.013">10.1016/j.jcrysgro.2017.04.013</a>.
  short: S. Scholz, R. Schott, P.A. Labud, C. Somsen, D. Reuter, A. Ludwig, A.D. Wieck,
    Journal of Crystal Growth 470 (2017) 46–50.
date_created: 2019-01-28T10:09:48Z
date_updated: 2022-01-06T07:03:26Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.jcrysgro.2017.04.013
intvolume: '       470'
language:
- iso: eng
page: 46-50
publication: Journal of Crystal Growth
publication_identifier:
  issn:
  - 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires
  grown by molecular beam epitaxy
type: journal_article
user_id: '42514'
volume: 470
year: '2017'
...
---
_id: '7024'
author:
- first_name: Nandlal
  full_name: Sharma, Nandlal
  last_name: Sharma
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
citation:
  ama: Sharma N, Reuter D. A modified gradient approach for the growth of low-density
    InAs quantum dot molecules by molecular beam epitaxy. <i>Journal of Crystal Growth</i>.
    2016;477:225-229. doi:<a href="https://doi.org/10.1016/j.jcrysgro.2016.11.117">10.1016/j.jcrysgro.2016.11.117</a>
  apa: Sharma, N., &#38; Reuter, D. (2016). A modified gradient approach for the growth
    of low-density InAs quantum dot molecules by molecular beam epitaxy. <i>Journal
    of Crystal Growth</i>, <i>477</i>, 225–229. <a href="https://doi.org/10.1016/j.jcrysgro.2016.11.117">https://doi.org/10.1016/j.jcrysgro.2016.11.117</a>
  bibtex: '@article{Sharma_Reuter_2016, title={A modified gradient approach for the
    growth of low-density InAs quantum dot molecules by molecular beam epitaxy}, volume={477},
    DOI={<a href="https://doi.org/10.1016/j.jcrysgro.2016.11.117">10.1016/j.jcrysgro.2016.11.117</a>},
    journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Sharma,
    Nandlal and Reuter, Dirk}, year={2016}, pages={225–229} }'
  chicago: 'Sharma, Nandlal, and Dirk Reuter. “A Modified Gradient Approach for the
    Growth of Low-Density InAs Quantum Dot Molecules by Molecular Beam Epitaxy.” <i>Journal
    of Crystal Growth</i> 477 (2016): 225–29. <a href="https://doi.org/10.1016/j.jcrysgro.2016.11.117">https://doi.org/10.1016/j.jcrysgro.2016.11.117</a>.'
  ieee: N. Sharma and D. Reuter, “A modified gradient approach for the growth of low-density
    InAs quantum dot molecules by molecular beam epitaxy,” <i>Journal of Crystal Growth</i>,
    vol. 477, pp. 225–229, 2016.
  mla: Sharma, Nandlal, and Dirk Reuter. “A Modified Gradient Approach for the Growth
    of Low-Density InAs Quantum Dot Molecules by Molecular Beam Epitaxy.” <i>Journal
    of Crystal Growth</i>, vol. 477, Elsevier BV, 2016, pp. 225–29, doi:<a href="https://doi.org/10.1016/j.jcrysgro.2016.11.117">10.1016/j.jcrysgro.2016.11.117</a>.
  short: N. Sharma, D. Reuter, Journal of Crystal Growth 477 (2016) 225–229.
date_created: 2019-01-28T09:53:20Z
date_updated: 2022-01-06T07:03:26Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.jcrysgro.2016.11.117
intvolume: '       477'
language:
- iso: eng
page: 225-229
publication: Journal of Crystal Growth
publication_identifier:
  issn:
  - 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: A modified gradient approach for the growth of low-density InAs quantum dot
  molecules by molecular beam epitaxy
type: journal_article
user_id: '42514'
volume: 477
year: '2016'
...
---
_id: '3959'
abstract:
- lang: eng
  text: Microresonators containing quantum dots find application in devices like single
    photon emitters for quantum information technology as well as low threshold laser
    devices. We demonstrate the fabrication of 60 nm thin zinc-blende AlN microdisks
    including cubic GaN quantum dots using dry chemical etching techniques. Scanning
    electron microscopy analysis reveals the morphology with smooth surfaces of the
    microdisks. Micro-photoluminescence measurements exhibit optically active quantum
    dots. Furthermore this is the first report of resonator modes in the emission
    spectrum of a cubic AlN microdisk.
article_type: original
author:
- first_name: M.
  full_name: Bürger, M.
  last_name: Bürger
- first_name: R.M.
  full_name: Kemper, R.M.
  last_name: Kemper
- first_name: C.A.
  full_name: Bader, C.A.
  last_name: Bader
- first_name: M.
  full_name: Ruth, M.
  last_name: Ruth
- first_name: S.
  full_name: Declair, S.
  last_name: Declair
- first_name: Cedrik
  full_name: Meier, Cedrik
  id: '20798'
  last_name: Meier
  orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Jens
  full_name: Förstner, Jens
  id: '158'
  last_name: Förstner
  orcid: 0000-0001-7059-9862
- first_name: D.J.
  full_name: As, D.J.
  last_name: As
citation:
  ama: Bürger M, Kemper RM, Bader CA, et al. Cubic GaN quantum dots embedded in zinc-blende
    AlN microdisks. <i>Journal of Crystal Growth</i>. 2013;378:287-290. doi:<a href="https://doi.org/10.1016/j.jcrysgro.2012.12.058">10.1016/j.jcrysgro.2012.12.058</a>
  apa: Bürger, M., Kemper, R. M., Bader, C. A., Ruth, M., Declair, S., Meier, C.,
    … As, D. J. (2013). Cubic GaN quantum dots embedded in zinc-blende AlN microdisks.
    <i>Journal of Crystal Growth</i>, <i>378</i>, 287–290. <a href="https://doi.org/10.1016/j.jcrysgro.2012.12.058">https://doi.org/10.1016/j.jcrysgro.2012.12.058</a>
  bibtex: '@article{Bürger_Kemper_Bader_Ruth_Declair_Meier_Förstner_As_2013, title={Cubic
    GaN quantum dots embedded in zinc-blende AlN microdisks}, volume={378}, DOI={<a
    href="https://doi.org/10.1016/j.jcrysgro.2012.12.058">10.1016/j.jcrysgro.2012.12.058</a>},
    journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Bürger,
    M. and Kemper, R.M. and Bader, C.A. and Ruth, M. and Declair, S. and Meier, Cedrik
    and Förstner, Jens and As, D.J.}, year={2013}, pages={287–290} }'
  chicago: 'Bürger, M., R.M. Kemper, C.A. Bader, M. Ruth, S. Declair, Cedrik Meier,
    Jens Förstner, and D.J. As. “Cubic GaN Quantum Dots Embedded in Zinc-Blende AlN
    Microdisks.” <i>Journal of Crystal Growth</i> 378 (2013): 287–90. <a href="https://doi.org/10.1016/j.jcrysgro.2012.12.058">https://doi.org/10.1016/j.jcrysgro.2012.12.058</a>.'
  ieee: M. Bürger <i>et al.</i>, “Cubic GaN quantum dots embedded in zinc-blende AlN
    microdisks,” <i>Journal of Crystal Growth</i>, vol. 378, pp. 287–290, 2013.
  mla: Bürger, M., et al. “Cubic GaN Quantum Dots Embedded in Zinc-Blende AlN Microdisks.”
    <i>Journal of Crystal Growth</i>, vol. 378, Elsevier BV, 2013, pp. 287–90, doi:<a
    href="https://doi.org/10.1016/j.jcrysgro.2012.12.058">10.1016/j.jcrysgro.2012.12.058</a>.
  short: M. Bürger, R.M. Kemper, C.A. Bader, M. Ruth, S. Declair, C. Meier, J. Förstner,
    D.J. As, Journal of Crystal Growth 378 (2013) 287–290.
date_created: 2018-08-21T07:33:08Z
date_updated: 2022-01-06T07:00:00Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1016/j.jcrysgro.2012.12.058
file:
- access_level: closed
  content_type: application/pdf
  creator: hclaudia
  date_created: 2018-08-21T07:34:05Z
  date_updated: 2018-08-21T07:34:05Z
  file_id: '3960'
  file_name: 2013-01 Bürger,Kemper,Bader,Ruth,Declair,Meier,Förstner,As_Cubic GaN
    quantum dots embedded in zinc-blende AlN microdisks.pdf
  file_size: 532153
  relation: main_file
  success: 1
file_date_updated: 2018-08-21T07:34:05Z
has_accepted_license: '1'
intvolume: '       378'
keyword:
- tet_topic_qd
- tet_topic_microdisk
language:
- iso: eng
page: 287-290
publication: Journal of Crystal Growth
publication_identifier:
  issn:
  - 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Cubic GaN quantum dots embedded in zinc-blende AlN microdisks
type: journal_article
user_id: '55706'
volume: 378
year: '2013'
...
---
_id: '4104'
abstract:
- lang: eng
  text: We report on the molecular beam epitaxy growth of cubic GaN on 3C–SiC (001)
    nanostructures. Transmission electron microscopy (TEM) studies show phase-pure
    cubic GaN crystals with a low defect density on top of the post shaped 3C–SiC
    nanostructures and GaN grown on their sidewalls, which is dominated by {111} planar
    defects. The nanostructures, aligned parallel and perpendicular to the [110] directions
    of the substrate, are located in anti-phase domains of the 3C–SiC/Si (001) substrate.
    These anti-phase domains strongly influence the optimum growth of GaN layers in
    these regions. TEM measurements demonstrate a different stacking fault density
    in the cubic GaN epilayer in these areas.
article_type: original
author:
- first_name: R.M.
  full_name: Kemper, R.M.
  last_name: Kemper
- first_name: L.
  full_name: Hiller, L.
  last_name: Hiller
- first_name: T.
  full_name: Stauden, T.
  last_name: Stauden
- first_name: J.
  full_name: Pezoldt, J.
  last_name: Pezoldt
- first_name: K.
  full_name: Duschik, K.
  last_name: Duschik
- first_name: T.
  full_name: Niendorf, T.
  last_name: Niendorf
- first_name: H.J.
  full_name: Maier, H.J.
  last_name: Maier
- first_name: D.
  full_name: Meertens, D.
  last_name: Meertens
- first_name: K.
  full_name: Tillmann, K.
  last_name: Tillmann
- first_name: D.J.
  full_name: As, D.J.
  last_name: As
- first_name: Jörg
  full_name: Lindner, Jörg
  id: '20797'
  last_name: Lindner
citation:
  ama: Kemper RM, Hiller L, Stauden T, et al. Growth of cubic GaN on 3C–SiC/Si (001)
    nanostructures. <i>Journal of Crystal Growth</i>. 2012;378:291-294. doi:<a href="https://doi.org/10.1016/j.jcrysgro.2012.10.011">10.1016/j.jcrysgro.2012.10.011</a>
  apa: Kemper, R. M., Hiller, L., Stauden, T., Pezoldt, J., Duschik, K., Niendorf,
    T., Maier, H. J., Meertens, D., Tillmann, K., As, D. J., &#38; Lindner, J. (2012).
    Growth of cubic GaN on 3C–SiC/Si (001) nanostructures. <i>Journal of Crystal Growth</i>,
    <i>378</i>, 291–294. <a href="https://doi.org/10.1016/j.jcrysgro.2012.10.011">https://doi.org/10.1016/j.jcrysgro.2012.10.011</a>
  bibtex: '@article{Kemper_Hiller_Stauden_Pezoldt_Duschik_Niendorf_Maier_Meertens_Tillmann_As_et
    al._2012, title={Growth of cubic GaN on 3C–SiC/Si (001) nanostructures}, volume={378},
    DOI={<a href="https://doi.org/10.1016/j.jcrysgro.2012.10.011">10.1016/j.jcrysgro.2012.10.011</a>},
    journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Kemper,
    R.M. and Hiller, L. and Stauden, T. and Pezoldt, J. and Duschik, K. and Niendorf,
    T. and Maier, H.J. and Meertens, D. and Tillmann, K. and As, D.J. and et al.},
    year={2012}, pages={291–294} }'
  chicago: 'Kemper, R.M., L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf,
    H.J. Maier, et al. “Growth of Cubic GaN on 3C–SiC/Si (001) Nanostructures.” <i>Journal
    of Crystal Growth</i> 378 (2012): 291–94. <a href="https://doi.org/10.1016/j.jcrysgro.2012.10.011">https://doi.org/10.1016/j.jcrysgro.2012.10.011</a>.'
  ieee: 'R. M. Kemper <i>et al.</i>, “Growth of cubic GaN on 3C–SiC/Si (001) nanostructures,”
    <i>Journal of Crystal Growth</i>, vol. 378, pp. 291–294, 2012, doi: <a href="https://doi.org/10.1016/j.jcrysgro.2012.10.011">10.1016/j.jcrysgro.2012.10.011</a>.'
  mla: Kemper, R. M., et al. “Growth of Cubic GaN on 3C–SiC/Si (001) Nanostructures.”
    <i>Journal of Crystal Growth</i>, vol. 378, Elsevier BV, 2012, pp. 291–94, doi:<a
    href="https://doi.org/10.1016/j.jcrysgro.2012.10.011">10.1016/j.jcrysgro.2012.10.011</a>.
  short: R.M. Kemper, L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf,
    H.J. Maier, D. Meertens, K. Tillmann, D.J. As, J. Lindner, Journal of Crystal
    Growth 378 (2012) 291–294.
conference:
  location: Nara (Japan)
  name: 17th Int. Conference on MBE 2012
date_created: 2018-08-23T12:59:44Z
date_updated: 2025-12-16T08:12:58Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
- _id: '35'
- _id: '230'
doi: 10.1016/j.jcrysgro.2012.10.011
file:
- access_level: closed
  content_type: application/pdf
  creator: hclaudia
  date_created: 2018-08-23T13:01:13Z
  date_updated: 2018-08-23T13:01:13Z
  file_id: '4105'
  file_name: Growth of cubic GaN on 3C-SiC-Si 001 nanostructures.pdf
  file_size: 3716730
  relation: main_file
  success: 1
file_date_updated: 2018-08-23T13:01:13Z
has_accepted_license: '1'
intvolume: '       378'
language:
- iso: eng
page: 291-294
publication: Journal of Crystal Growth
publication_identifier:
  issn:
  - 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Growth of cubic GaN on 3C–SiC/Si (001) nanostructures
type: journal_article
user_id: '16199'
volume: 378
year: '2012'
...
---
_id: '7705'
author:
- first_name: K.
  full_name: Trunov, K.
  last_name: Trunov
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A.
  full_name: Ludwig, A.
  last_name: Ludwig
- first_name: J.C.H.
  full_name: Chen, J.C.H.
  last_name: Chen
- first_name: O.
  full_name: Klochan, O.
  last_name: Klochan
- first_name: A.P.
  full_name: Micolich, A.P.
  last_name: Micolich
- first_name: A.R.
  full_name: Hamilton, A.R.
  last_name: Hamilton
- first_name: A.D.
  full_name: Wieck, A.D.
  last_name: Wieck
citation:
  ama: Trunov K, Reuter D, Ludwig A, et al. (100) GaAs/AlxGa1−xAs heterostructures
    for Zeeman spin splitting studies of hole quantum wires. <i>Journal of Crystal
    Growth</i>. 2010;323(1):48-51. doi:<a href="https://doi.org/10.1016/j.jcrysgro.2010.11.060">10.1016/j.jcrysgro.2010.11.060</a>
  apa: Trunov, K., Reuter, D., Ludwig, A., Chen, J. C. H., Klochan, O., Micolich,
    A. P., … Wieck, A. D. (2010). (100) GaAs/AlxGa1−xAs heterostructures for Zeeman
    spin splitting studies of hole quantum wires. <i>Journal of Crystal Growth</i>,
    <i>323</i>(1), 48–51. <a href="https://doi.org/10.1016/j.jcrysgro.2010.11.060">https://doi.org/10.1016/j.jcrysgro.2010.11.060</a>
  bibtex: '@article{Trunov_Reuter_Ludwig_Chen_Klochan_Micolich_Hamilton_Wieck_2010,
    title={(100) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies
    of hole quantum wires}, volume={323}, DOI={<a href="https://doi.org/10.1016/j.jcrysgro.2010.11.060">10.1016/j.jcrysgro.2010.11.060</a>},
    number={1}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Trunov,
    K. and Reuter, Dirk and Ludwig, A. and Chen, J.C.H. and Klochan, O. and Micolich,
    A.P. and Hamilton, A.R. and Wieck, A.D.}, year={2010}, pages={48–51} }'
  chicago: 'Trunov, K., Dirk Reuter, A. Ludwig, J.C.H. Chen, O. Klochan, A.P. Micolich,
    A.R. Hamilton, and A.D. Wieck. “(100) GaAs/AlxGa1−xAs Heterostructures for Zeeman
    Spin Splitting Studies of Hole Quantum Wires.” <i>Journal of Crystal Growth</i>
    323, no. 1 (2010): 48–51. <a href="https://doi.org/10.1016/j.jcrysgro.2010.11.060">https://doi.org/10.1016/j.jcrysgro.2010.11.060</a>.'
  ieee: K. Trunov <i>et al.</i>, “(100) GaAs/AlxGa1−xAs heterostructures for Zeeman
    spin splitting studies of hole quantum wires,” <i>Journal of Crystal Growth</i>,
    vol. 323, no. 1, pp. 48–51, 2010.
  mla: Trunov, K., et al. “(100) GaAs/AlxGa1−xAs Heterostructures for Zeeman Spin
    Splitting Studies of Hole Quantum Wires.” <i>Journal of Crystal Growth</i>, vol.
    323, no. 1, Elsevier BV, 2010, pp. 48–51, doi:<a href="https://doi.org/10.1016/j.jcrysgro.2010.11.060">10.1016/j.jcrysgro.2010.11.060</a>.
  short: K. Trunov, D. Reuter, A. Ludwig, J.C.H. Chen, O. Klochan, A.P. Micolich,
    A.R. Hamilton, A.D. Wieck, Journal of Crystal Growth 323 (2010) 48–51.
date_created: 2019-02-14T10:21:54Z
date_updated: 2022-01-06T07:03:45Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.jcrysgro.2010.11.060
intvolume: '       323'
issue: '1'
language:
- iso: eng
page: 48-51
publication: Journal of Crystal Growth
publication_identifier:
  issn:
  - 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: (100) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies of
  hole quantum wires
type: journal_article
user_id: '42514'
volume: 323
year: '2010'
...
---
_id: '4144'
abstract:
- lang: eng
  text: "Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on
    nano-patterned 3C-SiC/Si \r\n(0 0 1)substrates with negligible hexagonal content
    and less defect density than in planar cubic GaN layers.Nano-patterning of 3C-SiC/Si(001)
    is achieved by self-ordered colloidal masks for the first time. The method presented
    here offers the possibility to create nano-patterned cubic GaN without the need
    for a GaN etching process andt hus isa potential alternative to the conventional
    top–down fabrication techniques."
article_type: original
author:
- first_name: R.M.
  full_name: Kemper, R.M.
  last_name: Kemper
- first_name: M.
  full_name: Weinl, M.
  last_name: Weinl
- first_name: C.
  full_name: Mietze, C.
  last_name: Mietze
- first_name: M.
  full_name: Häberlen, M.
  last_name: Häberlen
- first_name: T.
  full_name: Schupp, T.
  last_name: Schupp
- first_name: E.
  full_name: Tschumak, E.
  last_name: Tschumak
- first_name: Jörg
  full_name: Lindner, Jörg
  id: '20797'
  last_name: Lindner
- first_name: K.
  full_name: Lischka, K.
  last_name: Lischka
- first_name: 'Donald '
  full_name: 'As, Donald '
  last_name: As
citation:
  ama: Kemper RM, Weinl M, Mietze C, et al. Growth of cubic GaN on nano-patterned
    3C-SiC/Si (001) substrates. <i>Journal of Crystal Growth</i>. 2010;323(1):84-87.
    doi:<a href="https://doi.org/10.1016/j.jcrysgro.2010.12.042">10.1016/j.jcrysgro.2010.12.042</a>
  apa: Kemper, R. M., Weinl, M., Mietze, C., Häberlen, M., Schupp, T., Tschumak, E.,
    … As, D. (2010). Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates.
    <i>Journal of Crystal Growth</i>, <i>323</i>(1), 84–87. <a href="https://doi.org/10.1016/j.jcrysgro.2010.12.042">https://doi.org/10.1016/j.jcrysgro.2010.12.042</a>
  bibtex: '@article{Kemper_Weinl_Mietze_Häberlen_Schupp_Tschumak_Lindner_Lischka_As_2010,
    title={Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates}, volume={323},
    DOI={<a href="https://doi.org/10.1016/j.jcrysgro.2010.12.042">10.1016/j.jcrysgro.2010.12.042</a>},
    number={1}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Kemper,
    R.M. and Weinl, M. and Mietze, C. and Häberlen, M. and Schupp, T. and Tschumak,
    E. and Lindner, Jörg and Lischka, K. and As, Donald }, year={2010}, pages={84–87}
    }'
  chicago: 'Kemper, R.M., M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak,
    Jörg Lindner, K. Lischka, and Donald  As. “Growth of Cubic GaN on Nano-Patterned
    3C-SiC/Si (001) Substrates.” <i>Journal of Crystal Growth</i> 323, no. 1 (2010):
    84–87. <a href="https://doi.org/10.1016/j.jcrysgro.2010.12.042">https://doi.org/10.1016/j.jcrysgro.2010.12.042</a>.'
  ieee: R. M. Kemper <i>et al.</i>, “Growth of cubic GaN on nano-patterned 3C-SiC/Si
    (001) substrates,” <i>Journal of Crystal Growth</i>, vol. 323, no. 1, pp. 84–87,
    2010.
  mla: Kemper, R. M., et al. “Growth of Cubic GaN on Nano-Patterned 3C-SiC/Si (001)
    Substrates.” <i>Journal of Crystal Growth</i>, vol. 323, no. 1, Elsevier BV, 2010,
    pp. 84–87, doi:<a href="https://doi.org/10.1016/j.jcrysgro.2010.12.042">10.1016/j.jcrysgro.2010.12.042</a>.
  short: R.M. Kemper, M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, J.
    Lindner, K. Lischka, D. As, Journal of Crystal Growth 323 (2010) 84–87.
date_created: 2018-08-27T12:34:33Z
date_updated: 2022-01-06T07:00:24Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1016/j.jcrysgro.2010.12.042
file:
- access_level: closed
  content_type: application/pdf
  creator: hclaudia
  date_created: 2018-08-27T12:35:32Z
  date_updated: 2018-08-27T12:35:32Z
  file_id: '4145'
  file_name: Growth of cubic GaN on nano-patterned 3C-SiC (001) substrates.pdf
  file_size: 665964
  relation: main_file
  success: 1
file_date_updated: 2018-08-27T12:35:32Z
has_accepted_license: '1'
intvolume: '       323'
issue: '1'
language:
- iso: eng
page: 84-87
publication: Journal of Crystal Growth
publication_identifier:
  issn:
  - 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates
type: journal_article
user_id: '55706'
volume: 323
year: '2010'
...
---
_id: '4214'
abstract:
- lang: eng
  text: "Non-polar a -plane (1 1 2 ̄ 0) GaN films were grown on r-plane sapphire by
    metal–organic vapor phase epitaxy and were subsequently annealed for 90 min at
    1070°C. Most dislocations were partial\r\ndislocations, which terminated basal
    plane stacking faults. Prior to annealing, these dislocations were\r\nrandomly
    distributed. After annealing, these dislocations moved into arrays oriented along
    the [0 0 0 1]\r\ndirection and aligned perpendicular to the film–substrate interface
    throughout their length, although\r\nthe total dislocation density remained unchanged.
    These changes were accompanied by broadening of\r\nthe symmetric X-ray diffraction
    1 1 2 ̄ 0 w-scan widths. The mechanism of movement was identified as\r\ndislocation
    glide, occurring due to highly anisotropic stresses (confirmed by X-ray diffraction
    lattice\r\nparameter measurements) and evidenced by macroscopic slip bands observed
    on the sample surface.\r\nThere was also an increase in the density of unintentionally
    n-type doped electrically conductive\r\ninclined features present at the film–substrate
    interface (as observed in cross-section using scanning\r\ncapacitance microscopy),
    suggesting out-diffusion of impurities from the substrate along with prismatic\r\nstacking
    faults. These data suggest that annealing processes performed close to film growth\r\ntemperatures
    can affect both the microstructure and the electrical properties of non-polar
    GaN films."
article_type: original
author:
- first_name: Rui
  full_name: Hao, Rui
  last_name: Hao
- first_name: T.
  full_name: Zhu, T.
  last_name: Zhu
- first_name: M.
  full_name: Häberlen, M.
  last_name: Häberlen
- first_name: T.Y.
  full_name: Chang, T.Y.
  last_name: Chang
- first_name: M.J.
  full_name: Kappers, M.J.
  last_name: Kappers
- first_name: R.A.
  full_name: Oliver, R.A.
  last_name: Oliver
- first_name: C.J.
  full_name: Humphreys, C.J.
  last_name: Humphreys
- first_name: M.A.
  full_name: Moram, M.A.
  last_name: Moram
citation:
  ama: Hao R, Zhu T, Häberlen M, et al. The effects of annealing on non-polar (112¯0)
    a-plane GaN films. <i>Journal of Crystal Growth</i>. 2010;312(23):3536-3543. doi:<a
    href="https://doi.org/10.1016/j.jcrysgro.2010.08.041">10.1016/j.jcrysgro.2010.08.041</a>
  apa: Hao, R., Zhu, T., Häberlen, M., Chang, T. Y., Kappers, M. J., Oliver, R. A.,
    … Moram, M. A. (2010). The effects of annealing on non-polar (112¯0) a-plane GaN
    films. <i>Journal of Crystal Growth</i>, <i>312</i>(23), 3536–3543. <a href="https://doi.org/10.1016/j.jcrysgro.2010.08.041">https://doi.org/10.1016/j.jcrysgro.2010.08.041</a>
  bibtex: '@article{Hao_Zhu_Häberlen_Chang_Kappers_Oliver_Humphreys_Moram_2010, title={The
    effects of annealing on non-polar (112¯0) a-plane GaN films}, volume={312}, DOI={<a
    href="https://doi.org/10.1016/j.jcrysgro.2010.08.041">10.1016/j.jcrysgro.2010.08.041</a>},
    number={23}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Hao,
    Rui and Zhu, T. and Häberlen, M. and Chang, T.Y. and Kappers, M.J. and Oliver,
    R.A. and Humphreys, C.J. and Moram, M.A.}, year={2010}, pages={3536–3543} }'
  chicago: 'Hao, Rui, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver,
    C.J. Humphreys, and M.A. Moram. “The Effects of Annealing on Non-Polar (112¯0)
    a-Plane GaN Films.” <i>Journal of Crystal Growth</i> 312, no. 23 (2010): 3536–43.
    <a href="https://doi.org/10.1016/j.jcrysgro.2010.08.041">https://doi.org/10.1016/j.jcrysgro.2010.08.041</a>.'
  ieee: R. Hao <i>et al.</i>, “The effects of annealing on non-polar (112¯0) a-plane
    GaN films,” <i>Journal of Crystal Growth</i>, vol. 312, no. 23, pp. 3536–3543,
    2010.
  mla: Hao, Rui, et al. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN
    Films.” <i>Journal of Crystal Growth</i>, vol. 312, no. 23, Elsevier BV, 2010,
    pp. 3536–43, doi:<a href="https://doi.org/10.1016/j.jcrysgro.2010.08.041">10.1016/j.jcrysgro.2010.08.041</a>.
  short: R. Hao, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J.
    Humphreys, M.A. Moram, Journal of Crystal Growth 312 (2010) 3536–3543.
date_created: 2018-08-28T12:49:39Z
date_updated: 2022-01-06T07:00:37Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1016/j.jcrysgro.2010.08.041
file:
- access_level: closed
  content_type: application/pdf
  creator: hclaudia
  date_created: 2018-08-28T12:50:07Z
  date_updated: 2018-08-28T12:50:07Z
  file_id: '4215'
  file_name: The effects of annealing on non-polar (11-20) a-plane GaN films.pdf
  file_size: 1218752
  relation: main_file
  success: 1
file_date_updated: 2018-08-28T12:50:07Z
has_accepted_license: '1'
intvolume: '       312'
issue: '23'
language:
- iso: eng
page: 3536-3543
publication: Journal of Crystal Growth
publication_identifier:
  issn:
  - 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: The effects of annealing on non-polar (112¯0) a-plane GaN films
type: journal_article
user_id: '55706'
volume: 312
year: '2010'
...
---
_id: '13830'
author:
- first_name: E.
  full_name: Rauls, E.
  last_name: Rauls
- first_name: J.
  full_name: Wiebe, J.
  last_name: Wiebe
- first_name: Wolf Gero
  full_name: Schmidt, Wolf Gero
  id: '468'
  last_name: Schmidt
  orcid: 0000-0002-2717-5076
citation:
  ama: Rauls E, Wiebe J, Schmidt WG. Understanding the cubic AlN growth plane from
    first principles. <i>Journal of Crystal Growth</i>. 2010;312:2892-2895. doi:<a
    href="https://doi.org/10.1016/j.jcrysgro.2010.07.027">10.1016/j.jcrysgro.2010.07.027</a>
  apa: Rauls, E., Wiebe, J., &#38; Schmidt, W. G. (2010). Understanding the cubic
    AlN growth plane from first principles. <i>Journal of Crystal Growth</i>, <i>312</i>,
    2892–2895. <a href="https://doi.org/10.1016/j.jcrysgro.2010.07.027">https://doi.org/10.1016/j.jcrysgro.2010.07.027</a>
  bibtex: '@article{Rauls_Wiebe_Schmidt_2010, title={Understanding the cubic AlN growth
    plane from first principles}, volume={312}, DOI={<a href="https://doi.org/10.1016/j.jcrysgro.2010.07.027">10.1016/j.jcrysgro.2010.07.027</a>},
    journal={Journal of Crystal Growth}, author={Rauls, E. and Wiebe, J. and Schmidt,
    Wolf Gero}, year={2010}, pages={2892–2895} }'
  chicago: 'Rauls, E., J. Wiebe, and Wolf Gero Schmidt. “Understanding the Cubic AlN
    Growth Plane from First Principles.” <i>Journal of Crystal Growth</i> 312 (2010):
    2892–95. <a href="https://doi.org/10.1016/j.jcrysgro.2010.07.027">https://doi.org/10.1016/j.jcrysgro.2010.07.027</a>.'
  ieee: 'E. Rauls, J. Wiebe, and W. G. Schmidt, “Understanding the cubic AlN growth
    plane from first principles,” <i>Journal of Crystal Growth</i>, vol. 312, pp.
    2892–2895, 2010, doi: <a href="https://doi.org/10.1016/j.jcrysgro.2010.07.027">10.1016/j.jcrysgro.2010.07.027</a>.'
  mla: Rauls, E., et al. “Understanding the Cubic AlN Growth Plane from First Principles.”
    <i>Journal of Crystal Growth</i>, vol. 312, 2010, pp. 2892–95, doi:<a href="https://doi.org/10.1016/j.jcrysgro.2010.07.027">10.1016/j.jcrysgro.2010.07.027</a>.
  short: E. Rauls, J. Wiebe, W.G. Schmidt, Journal of Crystal Growth 312 (2010) 2892–2895.
date_created: 2019-10-15T07:34:48Z
date_updated: 2025-12-16T07:49:01Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '35'
- _id: '230'
doi: 10.1016/j.jcrysgro.2010.07.027
funded_apc: '1'
intvolume: '       312'
language:
- iso: eng
page: 2892-2895
project:
- _id: '52'
  name: Computing Resources Provided by the Paderborn Center for Parallel Computing
publication: Journal of Crystal Growth
publication_identifier:
  issn:
  - 0022-0248
publication_status: published
status: public
title: Understanding the cubic AlN growth plane from first principles
type: journal_article
user_id: '16199'
volume: 312
year: '2010'
...
---
_id: '4192'
abstract:
- lang: eng
  text: "Buried ion beam synthesized 3C-SiC layers were revealed to the surface of
    silicon wafers to provide lattice matched substrates for GaN thin film epitaxy.
    Both epitaxial SiC/Si(1 1 1) and SiC/Si(0 0 1) growth surfaces with either six-
    or four-fold crystal symmetry, respectively, were formed. GaN thin film growth
    was achieved by ion beam assisted molecular beam epitaxy (IBA–MBE) which – owing
    to the energy and momentum transfer of the ions – allows to deposit epitaxial
    thin films at particularly low growth temperatures where both the stable hexagonal
    and the metastable cubic polytype of GaN can be formed. It is shown by X-ray diffraction
    (XRD) and cross-sectional transmission electron microscopy (XTEM) that using appropriate
    fluxes of Ga atoms both purely hexagonal and purely cubic GaN films can\r\nbe
    grown epitaxially on SiC/Si(1 1 1) and SiC/Si(0 0 1), respectively. Thereby Ga
    rich growth conditions seem to stabilize the formation of the cubic polytype.
    It is obvious from XTEM studies that the high density of crystal defects in the
    SiC layer is not transferred onto the growing GaN films and that the crystalline
    quality of GaN films improves with increasing film thickness. The influence of
    surface roughness and wettability, interfacial cavities and the nucleation of
    twin-type defects at the GaN/SiC interface on the crystalline quality of the GaN
    thin films is discussed."
article_type: original
author:
- first_name: M.
  full_name: Häberlen, M.
  last_name: Häberlen
- first_name: J.W.
  full_name: Gerlach, J.W.
  last_name: Gerlach
- first_name: B.
  full_name: Murphy, B.
  last_name: Murphy
- first_name: Jörg
  full_name: Lindner, Jörg
  id: '20797'
  last_name: Lindner
- first_name: B.
  full_name: Stritzker, B.
  last_name: Stritzker
citation:
  ama: Häberlen M, Gerlach JW, Murphy B, Lindner J, Stritzker B. Structural characterization
    of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. <i>Journal of
    Crystal Growth</i>. 2009;312(6):762-769. doi:<a href="https://doi.org/10.1016/j.jcrysgro.2009.12.048">10.1016/j.jcrysgro.2009.12.048</a>
  apa: Häberlen, M., Gerlach, J. W., Murphy, B., Lindner, J., &#38; Stritzker, B.
    (2009). Structural characterization of cubic and hexagonal GaN thin films grown
    by IBA–MBE on SiC/Si. <i>Journal of Crystal Growth</i>, <i>312</i>(6), 762–769.
    <a href="https://doi.org/10.1016/j.jcrysgro.2009.12.048">https://doi.org/10.1016/j.jcrysgro.2009.12.048</a>
  bibtex: '@article{Häberlen_Gerlach_Murphy_Lindner_Stritzker_2009, title={Structural
    characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si},
    volume={312}, DOI={<a href="https://doi.org/10.1016/j.jcrysgro.2009.12.048">10.1016/j.jcrysgro.2009.12.048</a>},
    number={6}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Häberlen,
    M. and Gerlach, J.W. and Murphy, B. and Lindner, Jörg and Stritzker, B.}, year={2009},
    pages={762–769} }'
  chicago: 'Häberlen, M., J.W. Gerlach, B. Murphy, Jörg Lindner, and B. Stritzker.
    “Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE
    on SiC/Si.” <i>Journal of Crystal Growth</i> 312, no. 6 (2009): 762–69. <a href="https://doi.org/10.1016/j.jcrysgro.2009.12.048">https://doi.org/10.1016/j.jcrysgro.2009.12.048</a>.'
  ieee: M. Häberlen, J. W. Gerlach, B. Murphy, J. Lindner, and B. Stritzker, “Structural
    characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si,”
    <i>Journal of Crystal Growth</i>, vol. 312, no. 6, pp. 762–769, 2009.
  mla: Häberlen, M., et al. “Structural Characterization of Cubic and Hexagonal GaN
    Thin Films Grown by IBA–MBE on SiC/Si.” <i>Journal of Crystal Growth</i>, vol.
    312, no. 6, Elsevier BV, 2009, pp. 762–69, doi:<a href="https://doi.org/10.1016/j.jcrysgro.2009.12.048">10.1016/j.jcrysgro.2009.12.048</a>.
  short: M. Häberlen, J.W. Gerlach, B. Murphy, J. Lindner, B. Stritzker, Journal of
    Crystal Growth 312 (2009) 762–769.
date_created: 2018-08-28T11:50:05Z
date_updated: 2022-01-06T07:00:32Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1016/j.jcrysgro.2009.12.048
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  file_name: Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown
    by IBA-MBE on SiC-Si.pdf
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intvolume: '       312'
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language:
- iso: eng
page: 762-769
publication: Journal of Crystal Growth
publication_identifier:
  issn:
  - 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Structural characterization of cubic and hexagonal GaN thin films grown by
  IBA–MBE on SiC/Si
type: journal_article
user_id: '55706'
volume: 312
year: '2009'
...
---
_id: '7646'
author:
- first_name: I.
  full_name: Regolin, I.
  last_name: Regolin
- first_name: D.
  full_name: Sudfeld, D.
  last_name: Sudfeld
- first_name: S.
  full_name: Lüttjohann, S.
  last_name: Lüttjohann
- first_name: V.
  full_name: Khorenko, V.
  last_name: Khorenko
- first_name: W.
  full_name: Prost, W.
  last_name: Prost
- first_name: J.
  full_name: Kästner, J.
  last_name: Kästner
- first_name: G.
  full_name: Dumpich, G.
  last_name: Dumpich
- first_name: Cedrik
  full_name: Meier, Cedrik
  id: '20798'
  last_name: Meier
  orcid: https://orcid.org/0000-0002-3787-3572
- first_name: A.
  full_name: Lorke, A.
  last_name: Lorke
- first_name: F.-J.
  full_name: Tegude, F.-J.
  last_name: Tegude
citation:
  ama: Regolin I, Sudfeld D, Lüttjohann S, et al. Growth and characterisation of GaAs/InGaAs/GaAs
    nanowhiskers on (111) GaAs. <i>Journal of Crystal Growth</i>. 2006;298:607-611.
    doi:<a href="https://doi.org/10.1016/j.jcrysgro.2006.10.122">10.1016/j.jcrysgro.2006.10.122</a>
  apa: Regolin, I., Sudfeld, D., Lüttjohann, S., Khorenko, V., Prost, W., Kästner,
    J., … Tegude, F.-J. (2006). Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers
    on (111) GaAs. <i>Journal of Crystal Growth</i>, <i>298</i>, 607–611. <a href="https://doi.org/10.1016/j.jcrysgro.2006.10.122">https://doi.org/10.1016/j.jcrysgro.2006.10.122</a>
  bibtex: '@article{Regolin_Sudfeld_Lüttjohann_Khorenko_Prost_Kästner_Dumpich_Meier_Lorke_Tegude_2006,
    title={Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs},
    volume={298}, DOI={<a href="https://doi.org/10.1016/j.jcrysgro.2006.10.122">10.1016/j.jcrysgro.2006.10.122</a>},
    journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Regolin,
    I. and Sudfeld, D. and Lüttjohann, S. and Khorenko, V. and Prost, W. and Kästner,
    J. and Dumpich, G. and Meier, Cedrik and Lorke, A. and Tegude, F.-J.}, year={2006},
    pages={607–611} }'
  chicago: 'Regolin, I., D. Sudfeld, S. Lüttjohann, V. Khorenko, W. Prost, J. Kästner,
    G. Dumpich, Cedrik Meier, A. Lorke, and F.-J. Tegude. “Growth and Characterisation
    of GaAs/InGaAs/GaAs Nanowhiskers on (111) GaAs.” <i>Journal of Crystal Growth</i>
    298 (2006): 607–11. <a href="https://doi.org/10.1016/j.jcrysgro.2006.10.122">https://doi.org/10.1016/j.jcrysgro.2006.10.122</a>.'
  ieee: I. Regolin <i>et al.</i>, “Growth and characterisation of GaAs/InGaAs/GaAs
    nanowhiskers on (111) GaAs,” <i>Journal of Crystal Growth</i>, vol. 298, pp. 607–611,
    2006.
  mla: Regolin, I., et al. “Growth and Characterisation of GaAs/InGaAs/GaAs Nanowhiskers
    on (111) GaAs.” <i>Journal of Crystal Growth</i>, vol. 298, Elsevier BV, 2006,
    pp. 607–11, doi:<a href="https://doi.org/10.1016/j.jcrysgro.2006.10.122">10.1016/j.jcrysgro.2006.10.122</a>.
  short: I. Regolin, D. Sudfeld, S. Lüttjohann, V. Khorenko, W. Prost, J. Kästner,
    G. Dumpich, C. Meier, A. Lorke, F.-J. Tegude, Journal of Crystal Growth 298 (2006)
    607–611.
date_created: 2019-02-13T11:36:42Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1016/j.jcrysgro.2006.10.122
extern: '1'
intvolume: '       298'
language:
- iso: eng
page: 607-611
publication: Journal of Crystal Growth
publication_identifier:
  issn:
  - 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs
type: journal_article
user_id: '20798'
volume: 298
year: '2006'
...
---
_id: '8664'
author:
- first_name: J.L.
  full_name: Yang, J.L.
  last_name: Yang
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A.D.
  full_name: Wieck, A.D.
  last_name: Wieck
citation:
  ama: Yang JL, Reuter D, Wieck AD. Sticking behavior of the dopants Si, C, and Be
    upon re-evaporation of individually doped GaAs(100). <i>Journal of Crystal Growth</i>.
    2006:278-284. doi:<a href="https://doi.org/10.1016/j.jcrysgro.2006.05.051">10.1016/j.jcrysgro.2006.05.051</a>
  apa: Yang, J. L., Reuter, D., &#38; Wieck, A. D. (2006). Sticking behavior of the
    dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100). <i>Journal
    of Crystal Growth</i>, 278–284. <a href="https://doi.org/10.1016/j.jcrysgro.2006.05.051">https://doi.org/10.1016/j.jcrysgro.2006.05.051</a>
  bibtex: '@article{Yang_Reuter_Wieck_2006, title={Sticking behavior of the dopants
    Si, C, and Be upon re-evaporation of individually doped GaAs(100)}, DOI={<a href="https://doi.org/10.1016/j.jcrysgro.2006.05.051">10.1016/j.jcrysgro.2006.05.051</a>},
    journal={Journal of Crystal Growth}, author={Yang, J.L. and Reuter, Dirk and Wieck,
    A.D.}, year={2006}, pages={278–284} }'
  chicago: Yang, J.L., Dirk Reuter, and A.D. Wieck. “Sticking Behavior of the Dopants
    Si, C, and Be upon Re-Evaporation of Individually Doped GaAs(100).” <i>Journal
    of Crystal Growth</i>, 2006, 278–84. <a href="https://doi.org/10.1016/j.jcrysgro.2006.05.051">https://doi.org/10.1016/j.jcrysgro.2006.05.051</a>.
  ieee: J. L. Yang, D. Reuter, and A. D. Wieck, “Sticking behavior of the dopants
    Si, C, and Be upon re-evaporation of individually doped GaAs(100),” <i>Journal
    of Crystal Growth</i>, pp. 278–284, 2006.
  mla: Yang, J. L., et al. “Sticking Behavior of the Dopants Si, C, and Be upon Re-Evaporation
    of Individually Doped GaAs(100).” <i>Journal of Crystal Growth</i>, 2006, pp.
    278–84, doi:<a href="https://doi.org/10.1016/j.jcrysgro.2006.05.051">10.1016/j.jcrysgro.2006.05.051</a>.
  short: J.L. Yang, D. Reuter, A.D. Wieck, Journal of Crystal Growth (2006) 278–284.
date_created: 2019-03-27T08:39:18Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.jcrysgro.2006.05.051
language:
- iso: eng
page: 278-284
publication: Journal of Crystal Growth
publication_identifier:
  issn:
  - 0022-0248
publication_status: published
status: public
title: Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually
  doped GaAs(100)
type: journal_article
user_id: '42514'
year: '2006'
...