@article{34090,
  author       = {{Riedl, Thomas and Lindner, Jörg}},
  issn         = {{0038-1098}},
  journal      = {{Solid State Communications}},
  keywords     = {{Materials Chemistry, Condensed Matter Physics, General Chemistry}},
  publisher    = {{Elsevier BV}},
  title        = {{{Applicability of molecular statics simulation to partial dislocations in GaAs}}},
  doi          = {{10.1016/j.ssc.2020.113927}},
  volume       = {{314-315}},
  year         = {{2020}},
}

@article{34089,
  author       = {{Riedl, Thomas and Lindner, Jörg}},
  issn         = {{0038-1098}},
  journal      = {{Solid State Communications}},
  keywords     = {{Materials Chemistry, Condensed Matter Physics, General Chemistry}},
  publisher    = {{Elsevier BV}},
  title        = {{{Applicability of molecular statics simulation to partial dislocations in GaAs}}},
  doi          = {{10.1016/j.ssc.2020.113927}},
  volume       = {{314-315}},
  year         = {{2020}},
}

@article{59685,
  abstract     = {{Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize room-temperature spintronic applications, beyond the usual magnetoresistive effects. Through carrier recombination, the angular momentum of the spin-polarized carriers is transferred to photons, thus leading to the circularly polarized emitted light. The intuition for the operation of such spin-lasers can be obtained from simple bucket and harmonic oscillator models, elucidating their steady-state and dynamic response, respectively. These lasers extend the functionalities of spintronic devices and exceed the performance of conventional (spin-unpolarized) lasers, including an order of magnitude faster modulation frequency. Surprisingly, this ultrafast operation relies on a short carrier spin relaxation time and a large anisotropy of the refractive index, both viewed as detrimental in spintronics and conventional lasers. Spin-lasers provide a platform to test novel concepts in spin devices and offer progress connected to the advances in more traditional areas of spintronics.}},
  author       = {{Žutić, Igor and Xu, Gaofeng and Lindemann, Markus and Faria Junior, Paulo E. and Lee, Jeongsu and Labinac, Velimir and Stojšić, Kristian and Sipahi, Guilherme M. and Hofmann, Martin R. and Gerhardt, Nils Christopher}},
  issn         = {{0038-1098}},
  journal      = {{Solid State Communications}},
  publisher    = {{Elsevier BV}},
  title        = {{{Spin-lasers: spintronics beyond magnetoresistance}}},
  doi          = {{10.1016/j.ssc.2020.113949}},
  volume       = {{316-317}},
  year         = {{2020}},
}

@article{7296,
  author       = {{Moody, G. and Singh, R. and Li, H. and Akimov, I.A. and Bayer, M. and Reuter, Dirk and Wieck, A.D. and Cundiff, S.T.}},
  issn         = {{0038-1098}},
  journal      = {{Solid State Communications}},
  pages        = {{65--69}},
  publisher    = {{Elsevier BV}},
  title        = {{{Correlation and dephasing effects on the non-radiative coherence between bright excitons in an InAs QD ensemble measured with 2D spectroscopy}}},
  doi          = {{10.1016/j.ssc.2013.03.025}},
  volume       = {{163}},
  year         = {{2013}},
}

@article{40411,
  author       = {{Pasenow, B. and Duc, H.T. and Meier, Torsten and Koch, S.W.}},
  issn         = {{0038-1098}},
  journal      = {{Solid State Communications}},
  keywords     = {{Materials Chemistry, Condensed Matter Physics, General Chemistry}},
  number       = {{1-2}},
  pages        = {{61--65}},
  publisher    = {{Elsevier BV}},
  title        = {{{Rabi flopping of charge and spin currents generated by ultrafast two-colour photoexcitation of semiconductor quantum wells}}},
  doi          = {{10.1016/j.ssc.2007.09.029}},
  volume       = {{145}},
  year         = {{2008}},
}

@article{24976,
  author       = {{Pasenow, B. and Duc, H.T. and Meier, Torsten and Koch, S.W.}},
  issn         = {{0038-1098}},
  journal      = {{Solid State Communications}},
  pages        = {{61--65}},
  title        = {{{Rabi flopping of charge and spin currents generated by ultrafast two-colour photoexcitation of semiconductor quantum wells}}},
  doi          = {{10.1016/j.ssc.2007.09.029}},
  volume       = {{145}},
  year         = {{2008}},
}

@article{23482,
  author       = {{Pasenow, B. and Duc, H.T. and Meier, Torsten and Koch, S.W.}},
  issn         = {{0038-1098}},
  journal      = {{Solid State Communications}},
  pages        = {{61--65}},
  title        = {{{Rabi flopping of charge and spin currents generated by ultrafast two-colour photoexcitation of semiconductor quantum wells}}},
  doi          = {{10.1016/j.ssc.2007.09.029}},
  year         = {{2008}},
}

@article{13854,
  author       = {{Schmidt, Wolf Gero and Srivastava, GP}},
  issn         = {{0038-1098}},
  journal      = {{Solid State Communications}},
  number       = {{4}},
  pages        = {{345--348}},
  title        = {{{First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110)}}},
  doi          = {{10.1016/0038-1098(94)90597-5}},
  volume       = {{89}},
  year         = {{1994}},
}