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Lindner, Solid State Communications 314–315 (2020).","chicago":"Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation to Partial Dislocations in GaAs.” <i>Solid State Communications</i> 314–315 (2020). <a href=\"https://doi.org/10.1016/j.ssc.2020.113927\">https://doi.org/10.1016/j.ssc.2020.113927</a>.","apa":"Riedl, T., &#38; Lindner, J. (2020). Applicability of molecular statics simulation to partial dislocations in GaAs. <i>Solid State Communications</i>, <i>314–315</i>, Article 113927. <a href=\"https://doi.org/10.1016/j.ssc.2020.113927\">https://doi.org/10.1016/j.ssc.2020.113927</a>","ieee":"T. Riedl and J. Lindner, “Applicability of molecular statics simulation to partial dislocations in GaAs,” <i>Solid State Communications</i>, vol. 314–315, Art. no. 113927, 2020, doi: <a href=\"https://doi.org/10.1016/j.ssc.2020.113927\">10.1016/j.ssc.2020.113927</a>."},"publication":"Solid State Communications","date_created":"2022-11-15T14:18:42Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","keyword":["Materials Chemistry","Condensed Matter Physics","General Chemistry"]},{"volume":"314-315","user_id":"77496","doi":"10.1016/j.ssc.2020.113927","language":[{"iso":"eng"}],"_id":"34089","publisher":"Elsevier BV","article_number":"113927","publication_status":"published","date_updated":"2023-01-10T12:13:23Z","author":[{"id":"36950","first_name":"Thomas","last_name":"Riedl","full_name":"Riedl, Thomas"},{"id":"20797","first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg"}],"publication_identifier":{"issn":["0038-1098"]},"year":"2020","status":"public","title":"Applicability of molecular statics simulation to partial dislocations in GaAs","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","keyword":["Materials Chemistry","Condensed Matter Physics","General Chemistry"],"date_created":"2022-11-15T14:17:36Z","citation":{"apa":"Riedl, T., &#38; Lindner, J. (2020). Applicability of molecular statics simulation to partial dislocations in GaAs. <i>Solid State Communications</i>, <i>314–315</i>, Article 113927. <a href=\"https://doi.org/10.1016/j.ssc.2020.113927\">https://doi.org/10.1016/j.ssc.2020.113927</a>","ieee":"T. Riedl and J. Lindner, “Applicability of molecular statics simulation to partial dislocations in GaAs,” <i>Solid State Communications</i>, vol. 314–315, Art. no. 113927, 2020, doi: <a href=\"https://doi.org/10.1016/j.ssc.2020.113927\">10.1016/j.ssc.2020.113927</a>.","short":"T. Riedl, J. Lindner, Solid State Communications 314–315 (2020).","chicago":"Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation to Partial Dislocations in GaAs.” <i>Solid State Communications</i> 314–315 (2020). <a href=\"https://doi.org/10.1016/j.ssc.2020.113927\">https://doi.org/10.1016/j.ssc.2020.113927</a>.","mla":"Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation to Partial Dislocations in GaAs.” <i>Solid State Communications</i>, vol. 314–315, 113927, Elsevier BV, 2020, doi:<a href=\"https://doi.org/10.1016/j.ssc.2020.113927\">10.1016/j.ssc.2020.113927</a>.","ama":"Riedl T, Lindner J. Applicability of molecular statics simulation to partial dislocations in GaAs. <i>Solid State Communications</i>. 2020;314-315. doi:<a href=\"https://doi.org/10.1016/j.ssc.2020.113927\">10.1016/j.ssc.2020.113927</a>","bibtex":"@article{Riedl_Lindner_2020, title={Applicability of molecular statics simulation to partial dislocations in GaAs}, volume={314–315}, DOI={<a href=\"https://doi.org/10.1016/j.ssc.2020.113927\">10.1016/j.ssc.2020.113927</a>}, number={113927}, journal={Solid State Communications}, publisher={Elsevier BV}, author={Riedl, Thomas and Lindner, Jörg}, year={2020} }"},"publication":"Solid State Communications"},{"status":"public","_id":"59685","publisher":"Elsevier BV","volume":"316-317","user_id":"15911","citation":{"apa":"Žutić, I., Xu, G., Lindemann, M., Faria Junior, P. E., Lee, J., Labinac, V., Stojšić, K., Sipahi, G. M., Hofmann, M. R., &#38; Gerhardt, N. C. (2020). Spin-lasers: spintronics beyond magnetoresistance. <i>Solid State Communications</i>, <i>316–317</i>, Article 113949. <a href=\"https://doi.org/10.1016/j.ssc.2020.113949\">https://doi.org/10.1016/j.ssc.2020.113949</a>","ieee":"I. Žutić <i>et al.</i>, “Spin-lasers: spintronics beyond magnetoresistance,” <i>Solid State Communications</i>, vol. 316–317, Art. no. 113949, 2020, doi: <a href=\"https://doi.org/10.1016/j.ssc.2020.113949\">10.1016/j.ssc.2020.113949</a>.","short":"I. Žutić, G. Xu, M. Lindemann, P.E. Faria Junior, J. Lee, V. Labinac, K. Stojšić, G.M. Sipahi, M.R. Hofmann, N.C. Gerhardt, Solid State Communications 316–317 (2020).","chicago":"Žutić, Igor, Gaofeng Xu, Markus Lindemann, Paulo E. Faria Junior, Jeongsu Lee, Velimir Labinac, Kristian Stojšić, Guilherme M. Sipahi, Martin R. Hofmann, and Nils Christopher Gerhardt. “Spin-Lasers: Spintronics beyond Magnetoresistance.” <i>Solid State Communications</i> 316–317 (2020). <a href=\"https://doi.org/10.1016/j.ssc.2020.113949\">https://doi.org/10.1016/j.ssc.2020.113949</a>.","mla":"Žutić, Igor, et al. “Spin-Lasers: Spintronics beyond Magnetoresistance.” <i>Solid State Communications</i>, vol. 316–317, 113949, Elsevier BV, 2020, doi:<a href=\"https://doi.org/10.1016/j.ssc.2020.113949\">10.1016/j.ssc.2020.113949</a>.","ama":"Žutić I, Xu G, Lindemann M, et al. Spin-lasers: spintronics beyond magnetoresistance. <i>Solid State Communications</i>. 2020;316-317. doi:<a href=\"https://doi.org/10.1016/j.ssc.2020.113949\">10.1016/j.ssc.2020.113949</a>","bibtex":"@article{Žutić_Xu_Lindemann_Faria Junior_Lee_Labinac_Stojšić_Sipahi_Hofmann_Gerhardt_2020, title={Spin-lasers: spintronics beyond magnetoresistance}, volume={316–317}, DOI={<a href=\"https://doi.org/10.1016/j.ssc.2020.113949\">10.1016/j.ssc.2020.113949</a>}, number={113949}, journal={Solid State Communications}, publisher={Elsevier BV}, author={Žutić, Igor and Xu, Gaofeng and Lindemann, Markus and Faria Junior, Paulo E. and Lee, Jeongsu and Labinac, Velimir and Stojšić, Kristian and Sipahi, Guilherme M. and Hofmann, Martin R. and Gerhardt, Nils Christopher}, year={2020} }"},"publication_identifier":{"issn":["0038-1098"]},"author":[{"last_name":"Žutić","first_name":"Igor","full_name":"Žutić, Igor"},{"full_name":"Xu, Gaofeng","last_name":"Xu","first_name":"Gaofeng"},{"last_name":"Lindemann","first_name":"Markus","full_name":"Lindemann, Markus"},{"last_name":"Faria Junior","first_name":"Paulo E.","full_name":"Faria Junior, Paulo E."},{"last_name":"Lee","first_name":"Jeongsu","full_name":"Lee, Jeongsu"},{"last_name":"Labinac","first_name":"Velimir","full_name":"Labinac, Velimir"},{"full_name":"Stojšić, Kristian","last_name":"Stojšić","first_name":"Kristian"},{"full_name":"Sipahi, Guilherme M.","last_name":"Sipahi","first_name":"Guilherme M."},{"last_name":"Hofmann","first_name":"Martin R.","full_name":"Hofmann, Martin R."},{"last_name":"Gerhardt","orcid":"0009-0002-5538-231X","first_name":"Nils Christopher","full_name":"Gerhardt, Nils Christopher","id":"115298"}],"title":"Spin-lasers: spintronics beyond magnetoresistance","year":"2020","article_type":"review","date_updated":"2025-04-25T07:28:46Z","publication_status":"published","language":[{"iso":"eng"}],"article_number":"113949","doi":"10.1016/j.ssc.2020.113949","publication":"Solid State Communications","abstract":[{"lang":"eng","text":"Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize room-temperature spintronic applications, beyond the usual magnetoresistive effects. Through carrier recombination, the angular momentum of the spin-polarized carriers is transferred to photons, thus leading to the circularly polarized emitted light. The intuition for the operation of such spin-lasers can be obtained from simple bucket and harmonic oscillator models, elucidating their steady-state and dynamic response, respectively. These lasers extend the functionalities of spintronic devices and exceed the performance of conventional (spin-unpolarized) lasers, including an order of magnitude faster modulation frequency. Surprisingly, this ultrafast operation relies on a short carrier spin relaxation time and a large anisotropy of the refractive index, both viewed as detrimental in spintronics and conventional lasers. Spin-lasers provide a platform to test novel concepts in spin devices and offer progress connected to the advances in more traditional areas of spintronics."}],"date_created":"2025-04-25T07:11:46Z","department":[{"_id":"977"}],"type":"journal_article"},{"publication":"Solid State Communications","citation":{"chicago":"Moody, G., R. Singh, H. Li, I.A. Akimov, M. Bayer, Dirk Reuter, A.D. Wieck, and S.T. Cundiff. “Correlation and Dephasing Effects on the Non-Radiative Coherence between Bright Excitons in an InAs QD Ensemble Measured with 2D Spectroscopy.” <i>Solid State Communications</i> 163 (2013): 65–69. <a href=\"https://doi.org/10.1016/j.ssc.2013.03.025\">https://doi.org/10.1016/j.ssc.2013.03.025</a>.","short":"G. Moody, R. Singh, H. Li, I.A. Akimov, M. Bayer, D. Reuter, A.D. Wieck, S.T. Cundiff, Solid State Communications 163 (2013) 65–69.","apa":"Moody, G., Singh, R., Li, H., Akimov, I. A., Bayer, M., Reuter, D., … Cundiff, S. T. (2013). 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Rabi flopping of charge and spin currents generated by ultrafast two-colour photoexcitation of semiconductor quantum wells. <i>Solid State Communications</i>, 61–65. <a href=\"https://doi.org/10.1016/j.ssc.2007.09.029\">https://doi.org/10.1016/j.ssc.2007.09.029</a>","ieee":"B. Pasenow, H. T. Duc, T. Meier, and S. W. Koch, “Rabi flopping of charge and spin currents generated by ultrafast two-colour photoexcitation of semiconductor quantum wells,” <i>Solid State Communications</i>, pp. 61–65, 2008, doi: <a href=\"https://doi.org/10.1016/j.ssc.2007.09.029\">10.1016/j.ssc.2007.09.029</a>.","short":"B. Pasenow, H.T. Duc, T. Meier, S.W. Koch, Solid State Communications (2008) 61–65.","chicago":"Pasenow, B., H.T. Duc, Torsten Meier, and S.W. Koch. “Rabi Flopping of Charge and Spin Currents Generated by Ultrafast Two-Colour Photoexcitation of Semiconductor Quantum Wells.” <i>Solid State Communications</i>, 2008, 61–65. <a href=\"https://doi.org/10.1016/j.ssc.2007.09.029\">https://doi.org/10.1016/j.ssc.2007.09.029</a>."},"publication":"Solid State Communications"},{"citation":{"mla":"Schmidt, Wolf Gero, and GP Srivastava. “First Principles Calculations of Interface Phonons of an Epitaxial Sb Monolayer on GaAs(110) and InP(110).” <i>Solid State Communications</i>, vol. 89, no. 4, 1994, pp. 345–48, doi:<a href=\"https://doi.org/10.1016/0038-1098(94)90597-5\">10.1016/0038-1098(94)90597-5</a>.","ama":"Schmidt WG, Srivastava G. First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110). <i>Solid State Communications</i>. 1994;89(4):345-348. doi:<a href=\"https://doi.org/10.1016/0038-1098(94)90597-5\">10.1016/0038-1098(94)90597-5</a>","bibtex":"@article{Schmidt_Srivastava_1994, title={First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110)}, volume={89}, DOI={<a href=\"https://doi.org/10.1016/0038-1098(94)90597-5\">10.1016/0038-1098(94)90597-5</a>}, number={4}, journal={Solid State Communications}, author={Schmidt, Wolf Gero and Srivastava, GP}, year={1994}, pages={345–348} }","apa":"Schmidt, W. G., &#38; Srivastava, G. (1994). First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110). <i>Solid State Communications</i>, <i>89</i>(4), 345–348. <a href=\"https://doi.org/10.1016/0038-1098(94)90597-5\">https://doi.org/10.1016/0038-1098(94)90597-5</a>","ieee":"W. G. Schmidt and G. Srivastava, “First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110),” <i>Solid State Communications</i>, vol. 89, no. 4, pp. 345–348, 1994, doi: <a href=\"https://doi.org/10.1016/0038-1098(94)90597-5\">10.1016/0038-1098(94)90597-5</a>.","chicago":"Schmidt, Wolf Gero, and GP Srivastava. “First Principles Calculations of Interface Phonons of an Epitaxial Sb Monolayer on GaAs(110) and InP(110).” <i>Solid State Communications</i> 89, no. 4 (1994): 345–48. <a href=\"https://doi.org/10.1016/0038-1098(94)90597-5\">https://doi.org/10.1016/0038-1098(94)90597-5</a>.","short":"W.G. Schmidt, G. Srivastava, Solid State Communications 89 (1994) 345–348."},"issue":"4","publication":"Solid State Communications","date_created":"2019-10-15T10:05:59Z","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"type":"journal_article","publication_identifier":{"issn":["0038-1098"]},"author":[{"id":"468","first_name":"Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","full_name":"Schmidt, Wolf Gero"},{"full_name":"Srivastava, GP","last_name":"Srivastava","first_name":"GP"}],"title":"First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110)","year":"1994","status":"public","intvolume":"        89","publication_status":"published","date_updated":"2025-12-16T07:37:51Z","_id":"13854","language":[{"iso":"eng"}],"page":"345-348","volume":89,"user_id":"16199","doi":"10.1016/0038-1098(94)90597-5"}]