---
_id: '34090'
article_number: '113927'
author:
- first_name: Thomas
  full_name: Riedl, Thomas
  id: '36950'
  last_name: Riedl
- first_name: Jörg
  full_name: Lindner, Jörg
  id: '20797'
  last_name: Lindner
citation:
  ama: Riedl T, Lindner J. Applicability of molecular statics simulation to partial
    dislocations in GaAs. <i>Solid State Communications</i>. 2020;314-315. doi:<a
    href="https://doi.org/10.1016/j.ssc.2020.113927">10.1016/j.ssc.2020.113927</a>
  apa: Riedl, T., &#38; Lindner, J. (2020). Applicability of molecular statics simulation
    to partial dislocations in GaAs. <i>Solid State Communications</i>, <i>314–315</i>,
    Article 113927. <a href="https://doi.org/10.1016/j.ssc.2020.113927">https://doi.org/10.1016/j.ssc.2020.113927</a>
  bibtex: '@article{Riedl_Lindner_2020, title={Applicability of molecular statics
    simulation to partial dislocations in GaAs}, volume={314–315}, DOI={<a href="https://doi.org/10.1016/j.ssc.2020.113927">10.1016/j.ssc.2020.113927</a>},
    number={113927}, journal={Solid State Communications}, publisher={Elsevier BV},
    author={Riedl, Thomas and Lindner, Jörg}, year={2020} }'
  chicago: Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation
    to Partial Dislocations in GaAs.” <i>Solid State Communications</i> 314–315 (2020).
    <a href="https://doi.org/10.1016/j.ssc.2020.113927">https://doi.org/10.1016/j.ssc.2020.113927</a>.
  ieee: 'T. Riedl and J. Lindner, “Applicability of molecular statics simulation to
    partial dislocations in GaAs,” <i>Solid State Communications</i>, vol. 314–315,
    Art. no. 113927, 2020, doi: <a href="https://doi.org/10.1016/j.ssc.2020.113927">10.1016/j.ssc.2020.113927</a>.'
  mla: Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation
    to Partial Dislocations in GaAs.” <i>Solid State Communications</i>, vol. 314–315,
    113927, Elsevier BV, 2020, doi:<a href="https://doi.org/10.1016/j.ssc.2020.113927">10.1016/j.ssc.2020.113927</a>.
  short: T. Riedl, J. Lindner, Solid State Communications 314–315 (2020).
date_created: 2022-11-15T14:18:42Z
date_updated: 2023-01-10T12:13:46Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.ssc.2020.113927
keyword:
- Materials Chemistry
- Condensed Matter Physics
- General Chemistry
language:
- iso: eng
publication: Solid State Communications
publication_identifier:
  issn:
  - 0038-1098
publication_status: published
publisher: Elsevier BV
status: public
title: Applicability of molecular statics simulation to partial dislocations in GaAs
type: journal_article
user_id: '77496'
volume: 314-315
year: '2020'
...
---
_id: '34089'
article_number: '113927'
author:
- first_name: Thomas
  full_name: Riedl, Thomas
  id: '36950'
  last_name: Riedl
- first_name: Jörg
  full_name: Lindner, Jörg
  id: '20797'
  last_name: Lindner
citation:
  ama: Riedl T, Lindner J. Applicability of molecular statics simulation to partial
    dislocations in GaAs. <i>Solid State Communications</i>. 2020;314-315. doi:<a
    href="https://doi.org/10.1016/j.ssc.2020.113927">10.1016/j.ssc.2020.113927</a>
  apa: Riedl, T., &#38; Lindner, J. (2020). Applicability of molecular statics simulation
    to partial dislocations in GaAs. <i>Solid State Communications</i>, <i>314–315</i>,
    Article 113927. <a href="https://doi.org/10.1016/j.ssc.2020.113927">https://doi.org/10.1016/j.ssc.2020.113927</a>
  bibtex: '@article{Riedl_Lindner_2020, title={Applicability of molecular statics
    simulation to partial dislocations in GaAs}, volume={314–315}, DOI={<a href="https://doi.org/10.1016/j.ssc.2020.113927">10.1016/j.ssc.2020.113927</a>},
    number={113927}, journal={Solid State Communications}, publisher={Elsevier BV},
    author={Riedl, Thomas and Lindner, Jörg}, year={2020} }'
  chicago: Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation
    to Partial Dislocations in GaAs.” <i>Solid State Communications</i> 314–315 (2020).
    <a href="https://doi.org/10.1016/j.ssc.2020.113927">https://doi.org/10.1016/j.ssc.2020.113927</a>.
  ieee: 'T. Riedl and J. Lindner, “Applicability of molecular statics simulation to
    partial dislocations in GaAs,” <i>Solid State Communications</i>, vol. 314–315,
    Art. no. 113927, 2020, doi: <a href="https://doi.org/10.1016/j.ssc.2020.113927">10.1016/j.ssc.2020.113927</a>.'
  mla: Riedl, Thomas, and Jörg Lindner. “Applicability of Molecular Statics Simulation
    to Partial Dislocations in GaAs.” <i>Solid State Communications</i>, vol. 314–315,
    113927, Elsevier BV, 2020, doi:<a href="https://doi.org/10.1016/j.ssc.2020.113927">10.1016/j.ssc.2020.113927</a>.
  short: T. Riedl, J. Lindner, Solid State Communications 314–315 (2020).
date_created: 2022-11-15T14:17:36Z
date_updated: 2023-01-10T12:13:23Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.ssc.2020.113927
keyword:
- Materials Chemistry
- Condensed Matter Physics
- General Chemistry
language:
- iso: eng
publication: Solid State Communications
publication_identifier:
  issn:
  - 0038-1098
publication_status: published
publisher: Elsevier BV
status: public
title: Applicability of molecular statics simulation to partial dislocations in GaAs
type: journal_article
user_id: '77496'
volume: 314-315
year: '2020'
...
---
_id: '59685'
abstract:
- lang: eng
  text: Introducing spin-polarized carriers in semiconductor lasers reveals an alternative
    path to realize room-temperature spintronic applications, beyond the usual magnetoresistive
    effects. Through carrier recombination, the angular momentum of the spin-polarized
    carriers is transferred to photons, thus leading to the circularly polarized emitted
    light. The intuition for the operation of such spin-lasers can be obtained from
    simple bucket and harmonic oscillator models, elucidating their steady-state and
    dynamic response, respectively. These lasers extend the functionalities of spintronic
    devices and exceed the performance of conventional (spin-unpolarized) lasers,
    including an order of magnitude faster modulation frequency. Surprisingly, this
    ultrafast operation relies on a short carrier spin relaxation time and a large
    anisotropy of the refractive index, both viewed as detrimental in spintronics
    and conventional lasers. Spin-lasers provide a platform to test novel concepts
    in spin devices and offer progress connected to the advances in more traditional
    areas of spintronics.
article_number: '113949'
article_type: review
author:
- first_name: Igor
  full_name: Žutić, Igor
  last_name: Žutić
- first_name: Gaofeng
  full_name: Xu, Gaofeng
  last_name: Xu
- first_name: Markus
  full_name: Lindemann, Markus
  last_name: Lindemann
- first_name: Paulo E.
  full_name: Faria Junior, Paulo E.
  last_name: Faria Junior
- first_name: Jeongsu
  full_name: Lee, Jeongsu
  last_name: Lee
- first_name: Velimir
  full_name: Labinac, Velimir
  last_name: Labinac
- first_name: Kristian
  full_name: Stojšić, Kristian
  last_name: Stojšić
- first_name: Guilherme M.
  full_name: Sipahi, Guilherme M.
  last_name: Sipahi
- first_name: Martin R.
  full_name: Hofmann, Martin R.
  last_name: Hofmann
- first_name: Nils Christopher
  full_name: Gerhardt, Nils Christopher
  id: '115298'
  last_name: Gerhardt
  orcid: 0009-0002-5538-231X
citation:
  ama: 'Žutić I, Xu G, Lindemann M, et al. Spin-lasers: spintronics beyond magnetoresistance.
    <i>Solid State Communications</i>. 2020;316-317. doi:<a href="https://doi.org/10.1016/j.ssc.2020.113949">10.1016/j.ssc.2020.113949</a>'
  apa: 'Žutić, I., Xu, G., Lindemann, M., Faria Junior, P. E., Lee, J., Labinac, V.,
    Stojšić, K., Sipahi, G. M., Hofmann, M. R., &#38; Gerhardt, N. C. (2020). Spin-lasers:
    spintronics beyond magnetoresistance. <i>Solid State Communications</i>, <i>316–317</i>,
    Article 113949. <a href="https://doi.org/10.1016/j.ssc.2020.113949">https://doi.org/10.1016/j.ssc.2020.113949</a>'
  bibtex: '@article{Žutić_Xu_Lindemann_Faria Junior_Lee_Labinac_Stojšić_Sipahi_Hofmann_Gerhardt_2020,
    title={Spin-lasers: spintronics beyond magnetoresistance}, volume={316–317}, DOI={<a
    href="https://doi.org/10.1016/j.ssc.2020.113949">10.1016/j.ssc.2020.113949</a>},
    number={113949}, journal={Solid State Communications}, publisher={Elsevier BV},
    author={Žutić, Igor and Xu, Gaofeng and Lindemann, Markus and Faria Junior, Paulo
    E. and Lee, Jeongsu and Labinac, Velimir and Stojšić, Kristian and Sipahi, Guilherme
    M. and Hofmann, Martin R. and Gerhardt, Nils Christopher}, year={2020} }'
  chicago: 'Žutić, Igor, Gaofeng Xu, Markus Lindemann, Paulo E. Faria Junior, Jeongsu
    Lee, Velimir Labinac, Kristian Stojšić, Guilherme M. Sipahi, Martin R. Hofmann,
    and Nils Christopher Gerhardt. “Spin-Lasers: Spintronics beyond Magnetoresistance.”
    <i>Solid State Communications</i> 316–317 (2020). <a href="https://doi.org/10.1016/j.ssc.2020.113949">https://doi.org/10.1016/j.ssc.2020.113949</a>.'
  ieee: 'I. Žutić <i>et al.</i>, “Spin-lasers: spintronics beyond magnetoresistance,”
    <i>Solid State Communications</i>, vol. 316–317, Art. no. 113949, 2020, doi: <a
    href="https://doi.org/10.1016/j.ssc.2020.113949">10.1016/j.ssc.2020.113949</a>.'
  mla: 'Žutić, Igor, et al. “Spin-Lasers: Spintronics beyond Magnetoresistance.” <i>Solid
    State Communications</i>, vol. 316–317, 113949, Elsevier BV, 2020, doi:<a href="https://doi.org/10.1016/j.ssc.2020.113949">10.1016/j.ssc.2020.113949</a>.'
  short: I. Žutić, G. Xu, M. Lindemann, P.E. Faria Junior, J. Lee, V. Labinac, K.
    Stojšić, G.M. Sipahi, M.R. Hofmann, N.C. Gerhardt, Solid State Communications
    316–317 (2020).
date_created: 2025-04-25T07:11:46Z
date_updated: 2025-04-25T07:28:46Z
department:
- _id: '977'
doi: 10.1016/j.ssc.2020.113949
language:
- iso: eng
publication: Solid State Communications
publication_identifier:
  issn:
  - 0038-1098
publication_status: published
publisher: Elsevier BV
status: public
title: 'Spin-lasers: spintronics beyond magnetoresistance'
type: journal_article
user_id: '15911'
volume: 316-317
year: '2020'
...
---
_id: '7296'
author:
- first_name: G.
  full_name: Moody, G.
  last_name: Moody
- first_name: R.
  full_name: Singh, R.
  last_name: Singh
- first_name: H.
  full_name: Li, H.
  last_name: Li
- first_name: I.A.
  full_name: Akimov, I.A.
  last_name: Akimov
- first_name: M.
  full_name: Bayer, M.
  last_name: Bayer
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A.D.
  full_name: Wieck, A.D.
  last_name: Wieck
- first_name: S.T.
  full_name: Cundiff, S.T.
  last_name: Cundiff
citation:
  ama: Moody G, Singh R, Li H, et al. Correlation and dephasing effects on the non-radiative
    coherence between bright excitons in an InAs QD ensemble measured with 2D spectroscopy.
    <i>Solid State Communications</i>. 2013;163:65-69. doi:<a href="https://doi.org/10.1016/j.ssc.2013.03.025">10.1016/j.ssc.2013.03.025</a>
  apa: Moody, G., Singh, R., Li, H., Akimov, I. A., Bayer, M., Reuter, D., … Cundiff,
    S. T. (2013). Correlation and dephasing effects on the non-radiative coherence
    between bright excitons in an InAs QD ensemble measured with 2D spectroscopy.
    <i>Solid State Communications</i>, <i>163</i>, 65–69. <a href="https://doi.org/10.1016/j.ssc.2013.03.025">https://doi.org/10.1016/j.ssc.2013.03.025</a>
  bibtex: '@article{Moody_Singh_Li_Akimov_Bayer_Reuter_Wieck_Cundiff_2013, title={Correlation
    and dephasing effects on the non-radiative coherence between bright excitons in
    an InAs QD ensemble measured with 2D spectroscopy}, volume={163}, DOI={<a href="https://doi.org/10.1016/j.ssc.2013.03.025">10.1016/j.ssc.2013.03.025</a>},
    journal={Solid State Communications}, publisher={Elsevier BV}, author={Moody,
    G. and Singh, R. and Li, H. and Akimov, I.A. and Bayer, M. and Reuter, Dirk and
    Wieck, A.D. and Cundiff, S.T.}, year={2013}, pages={65–69} }'
  chicago: 'Moody, G., R. Singh, H. Li, I.A. Akimov, M. Bayer, Dirk Reuter, A.D. Wieck,
    and S.T. Cundiff. “Correlation and Dephasing Effects on the Non-Radiative Coherence
    between Bright Excitons in an InAs QD Ensemble Measured with 2D Spectroscopy.”
    <i>Solid State Communications</i> 163 (2013): 65–69. <a href="https://doi.org/10.1016/j.ssc.2013.03.025">https://doi.org/10.1016/j.ssc.2013.03.025</a>.'
  ieee: G. Moody <i>et al.</i>, “Correlation and dephasing effects on the non-radiative
    coherence between bright excitons in an InAs QD ensemble measured with 2D spectroscopy,”
    <i>Solid State Communications</i>, vol. 163, pp. 65–69, 2013.
  mla: Moody, G., et al. “Correlation and Dephasing Effects on the Non-Radiative Coherence
    between Bright Excitons in an InAs QD Ensemble Measured with 2D Spectroscopy.”
    <i>Solid State Communications</i>, vol. 163, Elsevier BV, 2013, pp. 65–69, doi:<a
    href="https://doi.org/10.1016/j.ssc.2013.03.025">10.1016/j.ssc.2013.03.025</a>.
  short: G. Moody, R. Singh, H. Li, I.A. Akimov, M. Bayer, D. Reuter, A.D. Wieck,
    S.T. Cundiff, Solid State Communications 163 (2013) 65–69.
date_created: 2019-01-31T09:00:47Z
date_updated: 2022-01-06T07:03:32Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.ssc.2013.03.025
intvolume: '       163'
language:
- iso: eng
page: 65-69
publication: Solid State Communications
publication_identifier:
  issn:
  - 0038-1098
publication_status: published
publisher: Elsevier BV
status: public
title: Correlation and dephasing effects on the non-radiative coherence between bright
  excitons in an InAs QD ensemble measured with 2D spectroscopy
type: journal_article
user_id: '42514'
volume: 163
year: '2013'
...
---
_id: '40411'
author:
- first_name: B.
  full_name: Pasenow, B.
  last_name: Pasenow
- first_name: H.T.
  full_name: Duc, H.T.
  last_name: Duc
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: S.W.
  full_name: Koch, S.W.
  last_name: Koch
citation:
  ama: Pasenow B, Duc HT, Meier T, Koch SW. Rabi flopping of charge and spin currents
    generated by ultrafast two-colour photoexcitation of semiconductor quantum wells.
    <i>Solid State Communications</i>. 2008;145(1-2):61-65. doi:<a href="https://doi.org/10.1016/j.ssc.2007.09.029">10.1016/j.ssc.2007.09.029</a>
  apa: Pasenow, B., Duc, H. T., Meier, T., &#38; Koch, S. W. (2008). Rabi flopping
    of charge and spin currents generated by ultrafast two-colour photoexcitation
    of semiconductor quantum wells. <i>Solid State Communications</i>, <i>145</i>(1–2),
    61–65. <a href="https://doi.org/10.1016/j.ssc.2007.09.029">https://doi.org/10.1016/j.ssc.2007.09.029</a>
  bibtex: '@article{Pasenow_Duc_Meier_Koch_2008, title={Rabi flopping of charge and
    spin currents generated by ultrafast two-colour photoexcitation of semiconductor
    quantum wells}, volume={145}, DOI={<a href="https://doi.org/10.1016/j.ssc.2007.09.029">10.1016/j.ssc.2007.09.029</a>},
    number={1–2}, journal={Solid State Communications}, publisher={Elsevier BV}, author={Pasenow,
    B. and Duc, H.T. and Meier, Torsten and Koch, S.W.}, year={2008}, pages={61–65}
    }'
  chicago: 'Pasenow, B., H.T. Duc, Torsten Meier, and S.W. Koch. “Rabi Flopping of
    Charge and Spin Currents Generated by Ultrafast Two-Colour Photoexcitation of
    Semiconductor Quantum Wells.” <i>Solid State Communications</i> 145, no. 1–2 (2008):
    61–65. <a href="https://doi.org/10.1016/j.ssc.2007.09.029">https://doi.org/10.1016/j.ssc.2007.09.029</a>.'
  ieee: 'B. Pasenow, H. T. Duc, T. Meier, and S. W. Koch, “Rabi flopping of charge
    and spin currents generated by ultrafast two-colour photoexcitation of semiconductor
    quantum wells,” <i>Solid State Communications</i>, vol. 145, no. 1–2, pp. 61–65,
    2008, doi: <a href="https://doi.org/10.1016/j.ssc.2007.09.029">10.1016/j.ssc.2007.09.029</a>.'
  mla: Pasenow, B., et al. “Rabi Flopping of Charge and Spin Currents Generated by
    Ultrafast Two-Colour Photoexcitation of Semiconductor Quantum Wells.” <i>Solid
    State Communications</i>, vol. 145, no. 1–2, Elsevier BV, 2008, pp. 61–65, doi:<a
    href="https://doi.org/10.1016/j.ssc.2007.09.029">10.1016/j.ssc.2007.09.029</a>.
  short: B. Pasenow, H.T. Duc, T. Meier, S.W. Koch, Solid State Communications 145
    (2008) 61–65.
date_created: 2023-01-26T14:43:20Z
date_updated: 2023-04-21T22:38:54Z
department:
- _id: '15'
- _id: '170'
- _id: '293'
- _id: '230'
doi: 10.1016/j.ssc.2007.09.029
intvolume: '       145'
issue: 1-2
keyword:
- Materials Chemistry
- Condensed Matter Physics
- General Chemistry
language:
- iso: eng
page: 61-65
publication: Solid State Communications
publication_identifier:
  issn:
  - 0038-1098
publication_status: published
publisher: Elsevier BV
status: public
title: Rabi flopping of charge and spin currents generated by ultrafast two-colour
  photoexcitation of semiconductor quantum wells
type: journal_article
user_id: '49063'
volume: 145
year: '2008'
...
---
_id: '24976'
author:
- first_name: B.
  full_name: Pasenow, B.
  last_name: Pasenow
- first_name: H.T.
  full_name: Duc, H.T.
  last_name: Duc
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: S.W.
  full_name: Koch, S.W.
  last_name: Koch
citation:
  ama: Pasenow B, Duc HT, Meier T, Koch SW. Rabi flopping of charge and spin currents
    generated by ultrafast two-colour photoexcitation of semiconductor quantum wells.
    <i>Solid State Communications</i>. 2008;145:61-65. doi:<a href="https://doi.org/10.1016/j.ssc.2007.09.029">10.1016/j.ssc.2007.09.029</a>
  apa: Pasenow, B., Duc, H. T., Meier, T., &#38; Koch, S. W. (2008). Rabi flopping
    of charge and spin currents generated by ultrafast two-colour photoexcitation
    of semiconductor quantum wells. <i>Solid State Communications</i>, <i>145</i>,
    61–65. <a href="https://doi.org/10.1016/j.ssc.2007.09.029">https://doi.org/10.1016/j.ssc.2007.09.029</a>
  bibtex: '@article{Pasenow_Duc_Meier_Koch_2008, title={Rabi flopping of charge and
    spin currents generated by ultrafast two-colour photoexcitation of semiconductor
    quantum wells}, volume={145}, DOI={<a href="https://doi.org/10.1016/j.ssc.2007.09.029">10.1016/j.ssc.2007.09.029</a>},
    journal={Solid State Communications}, author={Pasenow, B. and Duc, H.T. and Meier,
    Torsten and Koch, S.W.}, year={2008}, pages={61–65} }'
  chicago: 'Pasenow, B., H.T. Duc, Torsten Meier, and S.W. Koch. “Rabi Flopping of
    Charge and Spin Currents Generated by Ultrafast Two-Colour Photoexcitation of
    Semiconductor Quantum Wells.” <i>Solid State Communications</i> 145 (2008): 61–65.
    <a href="https://doi.org/10.1016/j.ssc.2007.09.029">https://doi.org/10.1016/j.ssc.2007.09.029</a>.'
  ieee: 'B. Pasenow, H. T. Duc, T. Meier, and S. W. Koch, “Rabi flopping of charge
    and spin currents generated by ultrafast two-colour photoexcitation of semiconductor
    quantum wells,” <i>Solid State Communications</i>, vol. 145, pp. 61–65, 2008,
    doi: <a href="https://doi.org/10.1016/j.ssc.2007.09.029">10.1016/j.ssc.2007.09.029</a>.'
  mla: Pasenow, B., et al. “Rabi Flopping of Charge and Spin Currents Generated by
    Ultrafast Two-Colour Photoexcitation of Semiconductor Quantum Wells.” <i>Solid
    State Communications</i>, vol. 145, 2008, pp. 61–65, doi:<a href="https://doi.org/10.1016/j.ssc.2007.09.029">10.1016/j.ssc.2007.09.029</a>.
  short: B. Pasenow, H.T. Duc, T. Meier, S.W. Koch, Solid State Communications 145
    (2008) 61–65.
date_created: 2021-09-24T07:54:42Z
date_updated: 2023-04-21T22:38:53Z
department:
- _id: '15'
- _id: '170'
- _id: '293'
doi: 10.1016/j.ssc.2007.09.029
intvolume: '       145'
language:
- iso: eng
page: 61-65
publication: Solid State Communications
publication_identifier:
  issn:
  - 0038-1098
publication_status: published
status: public
title: Rabi flopping of charge and spin currents generated by ultrafast two-colour
  photoexcitation of semiconductor quantum wells
type: journal_article
user_id: '49063'
volume: 145
year: '2008'
...
---
_id: '23482'
author:
- first_name: B.
  full_name: Pasenow, B.
  last_name: Pasenow
- first_name: H.T.
  full_name: Duc, H.T.
  last_name: Duc
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: S.W.
  full_name: Koch, S.W.
  last_name: Koch
citation:
  ama: Pasenow B, Duc HT, Meier T, Koch SW. Rabi flopping of charge and spin currents
    generated by ultrafast two-colour photoexcitation of semiconductor quantum wells.
    <i>Solid State Communications</i>. Published online 2008:61-65. doi:<a href="https://doi.org/10.1016/j.ssc.2007.09.029">10.1016/j.ssc.2007.09.029</a>
  apa: Pasenow, B., Duc, H. T., Meier, T., &#38; Koch, S. W. (2008). Rabi flopping
    of charge and spin currents generated by ultrafast two-colour photoexcitation
    of semiconductor quantum wells. <i>Solid State Communications</i>, 61–65. <a href="https://doi.org/10.1016/j.ssc.2007.09.029">https://doi.org/10.1016/j.ssc.2007.09.029</a>
  bibtex: '@article{Pasenow_Duc_Meier_Koch_2008, title={Rabi flopping of charge and
    spin currents generated by ultrafast two-colour photoexcitation of semiconductor
    quantum wells}, DOI={<a href="https://doi.org/10.1016/j.ssc.2007.09.029">10.1016/j.ssc.2007.09.029</a>},
    journal={Solid State Communications}, author={Pasenow, B. and Duc, H.T. and Meier,
    Torsten and Koch, S.W.}, year={2008}, pages={61–65} }'
  chicago: Pasenow, B., H.T. Duc, Torsten Meier, and S.W. Koch. “Rabi Flopping of
    Charge and Spin Currents Generated by Ultrafast Two-Colour Photoexcitation of
    Semiconductor Quantum Wells.” <i>Solid State Communications</i>, 2008, 61–65.
    <a href="https://doi.org/10.1016/j.ssc.2007.09.029">https://doi.org/10.1016/j.ssc.2007.09.029</a>.
  ieee: 'B. Pasenow, H. T. Duc, T. Meier, and S. W. Koch, “Rabi flopping of charge
    and spin currents generated by ultrafast two-colour photoexcitation of semiconductor
    quantum wells,” <i>Solid State Communications</i>, pp. 61–65, 2008, doi: <a href="https://doi.org/10.1016/j.ssc.2007.09.029">10.1016/j.ssc.2007.09.029</a>.'
  mla: Pasenow, B., et al. “Rabi Flopping of Charge and Spin Currents Generated by
    Ultrafast Two-Colour Photoexcitation of Semiconductor Quantum Wells.” <i>Solid
    State Communications</i>, 2008, pp. 61–65, doi:<a href="https://doi.org/10.1016/j.ssc.2007.09.029">10.1016/j.ssc.2007.09.029</a>.
  short: B. Pasenow, H.T. Duc, T. Meier, S.W. Koch, Solid State Communications (2008)
    61–65.
date_created: 2021-08-24T09:00:50Z
date_updated: 2023-04-21T22:38:51Z
department:
- _id: '15'
- _id: '170'
- _id: '293'
doi: 10.1016/j.ssc.2007.09.029
language:
- iso: eng
page: 61-65
publication: Solid State Communications
publication_identifier:
  issn:
  - 0038-1098
publication_status: published
status: public
title: Rabi flopping of charge and spin currents generated by ultrafast two-colour
  photoexcitation of semiconductor quantum wells
type: journal_article
user_id: '49063'
year: '2008'
...
---
_id: '13854'
author:
- first_name: Wolf Gero
  full_name: Schmidt, Wolf Gero
  id: '468'
  last_name: Schmidt
  orcid: 0000-0002-2717-5076
- first_name: GP
  full_name: Srivastava, GP
  last_name: Srivastava
citation:
  ama: Schmidt WG, Srivastava G. First principles calculations of interface phonons
    of an Epitaxial Sb monolayer on GaAs(110) and InP(110). <i>Solid State Communications</i>.
    1994;89(4):345-348. doi:<a href="https://doi.org/10.1016/0038-1098(94)90597-5">10.1016/0038-1098(94)90597-5</a>
  apa: Schmidt, W. G., &#38; Srivastava, G. (1994). First principles calculations
    of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110). <i>Solid
    State Communications</i>, <i>89</i>(4), 345–348. <a href="https://doi.org/10.1016/0038-1098(94)90597-5">https://doi.org/10.1016/0038-1098(94)90597-5</a>
  bibtex: '@article{Schmidt_Srivastava_1994, title={First principles calculations
    of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110)},
    volume={89}, DOI={<a href="https://doi.org/10.1016/0038-1098(94)90597-5">10.1016/0038-1098(94)90597-5</a>},
    number={4}, journal={Solid State Communications}, author={Schmidt, Wolf Gero and
    Srivastava, GP}, year={1994}, pages={345–348} }'
  chicago: 'Schmidt, Wolf Gero, and GP Srivastava. “First Principles Calculations
    of Interface Phonons of an Epitaxial Sb Monolayer on GaAs(110) and InP(110).”
    <i>Solid State Communications</i> 89, no. 4 (1994): 345–48. <a href="https://doi.org/10.1016/0038-1098(94)90597-5">https://doi.org/10.1016/0038-1098(94)90597-5</a>.'
  ieee: 'W. G. Schmidt and G. Srivastava, “First principles calculations of interface
    phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110),” <i>Solid State
    Communications</i>, vol. 89, no. 4, pp. 345–348, 1994, doi: <a href="https://doi.org/10.1016/0038-1098(94)90597-5">10.1016/0038-1098(94)90597-5</a>.'
  mla: Schmidt, Wolf Gero, and GP Srivastava. “First Principles Calculations of Interface
    Phonons of an Epitaxial Sb Monolayer on GaAs(110) and InP(110).” <i>Solid State
    Communications</i>, vol. 89, no. 4, 1994, pp. 345–48, doi:<a href="https://doi.org/10.1016/0038-1098(94)90597-5">10.1016/0038-1098(94)90597-5</a>.
  short: W.G. Schmidt, G. Srivastava, Solid State Communications 89 (1994) 345–348.
date_created: 2019-10-15T10:05:59Z
date_updated: 2025-12-16T07:37:51Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '35'
- _id: '230'
doi: 10.1016/0038-1098(94)90597-5
intvolume: '        89'
issue: '4'
language:
- iso: eng
page: 345-348
publication: Solid State Communications
publication_identifier:
  issn:
  - 0038-1098
publication_status: published
status: public
title: First principles calculations of interface phonons of an Epitaxial Sb monolayer
  on GaAs(110) and InP(110)
type: journal_article
user_id: '16199'
volume: 89
year: '1994'
...