[{"status":"public","type":"journal_article","publication":"Solid-State Electronics","language":[{"iso":"eng"}],"keyword":["Materials Chemistry","Electrical and Electronic Engineering","Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"user_id":"20179","department":[{"_id":"59"}],"_id":"39450","citation":{"ama":"Vidor FF, Meyers T, Müller K, Wirth GI, Hilleringmann U. Inverter circuits on freestanding flexible substrate using ZnO nanoparticles for cost-efficient electronics. <i>Solid-State Electronics</i>. 2017;137:16-21. doi:<a href=\"https://doi.org/10.1016/j.sse.2017.07.011\">10.1016/j.sse.2017.07.011</a>","chicago":"Vidor, Fábio F., Thorsten Meyers, Kathrin Müller, Gilson I. Wirth, and Ulrich Hilleringmann. “Inverter Circuits on Freestanding Flexible Substrate Using ZnO Nanoparticles for Cost-Efficient Electronics.” <i>Solid-State Electronics</i> 137 (2017): 16–21. <a href=\"https://doi.org/10.1016/j.sse.2017.07.011\">https://doi.org/10.1016/j.sse.2017.07.011</a>.","ieee":"F. F. Vidor, T. Meyers, K. Müller, G. I. Wirth, and U. Hilleringmann, “Inverter circuits on freestanding flexible substrate using ZnO nanoparticles for cost-efficient electronics,” <i>Solid-State Electronics</i>, vol. 137, pp. 16–21, 2017, doi: <a href=\"https://doi.org/10.1016/j.sse.2017.07.011\">10.1016/j.sse.2017.07.011</a>.","mla":"Vidor, Fábio F., et al. “Inverter Circuits on Freestanding Flexible Substrate Using ZnO Nanoparticles for Cost-Efficient Electronics.” <i>Solid-State Electronics</i>, vol. 137, Elsevier BV, 2017, pp. 16–21, doi:<a href=\"https://doi.org/10.1016/j.sse.2017.07.011\">10.1016/j.sse.2017.07.011</a>.","bibtex":"@article{Vidor_Meyers_Müller_Wirth_Hilleringmann_2017, title={Inverter circuits on freestanding flexible substrate using ZnO nanoparticles for cost-efficient electronics}, volume={137}, DOI={<a href=\"https://doi.org/10.1016/j.sse.2017.07.011\">10.1016/j.sse.2017.07.011</a>}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Vidor, Fábio F. and Meyers, Thorsten and Müller, Kathrin and Wirth, Gilson I. and Hilleringmann, Ulrich}, year={2017}, pages={16–21} }","short":"F.F. Vidor, T. Meyers, K. Müller, G.I. Wirth, U. Hilleringmann, Solid-State Electronics 137 (2017) 16–21.","apa":"Vidor, F. F., Meyers, T., Müller, K., Wirth, G. I., &#38; Hilleringmann, U. (2017). Inverter circuits on freestanding flexible substrate using ZnO nanoparticles for cost-efficient electronics. <i>Solid-State Electronics</i>, <i>137</i>, 16–21. <a href=\"https://doi.org/10.1016/j.sse.2017.07.011\">https://doi.org/10.1016/j.sse.2017.07.011</a>"},"intvolume":"       137","page":"16-21","year":"2017","publication_status":"published","publication_identifier":{"issn":["0038-1101"]},"doi":"10.1016/j.sse.2017.07.011","title":"Inverter circuits on freestanding flexible substrate using ZnO nanoparticles for cost-efficient electronics","date_created":"2023-01-24T11:03:12Z","author":[{"first_name":"Fábio F.","last_name":"Vidor","full_name":"Vidor, Fábio F."},{"first_name":"Thorsten","full_name":"Meyers, Thorsten","last_name":"Meyers"},{"full_name":"Müller, Kathrin","last_name":"Müller","first_name":"Kathrin"},{"first_name":"Gilson I.","full_name":"Wirth, Gilson I.","last_name":"Wirth"},{"id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"}],"volume":137,"date_updated":"2023-03-22T10:13:25Z","publisher":"Elsevier BV"},{"publication":"Solid-State Electronics","language":[{"iso":"eng"}],"keyword":["Materials Chemistry","Electrical and Electronic Engineering","Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"year":"2011","issue":"1","title":"Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric","date_created":"2023-01-24T11:57:07Z","publisher":"Elsevier BV","status":"public","type":"journal_article","department":[{"_id":"59"}],"user_id":"20179","_id":"39527","page":"110-114","intvolume":"        62","citation":{"ama":"Wolff K, Hilleringmann U. Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric. <i>Solid-State Electronics</i>. 2011;62(1):110-114. doi:<a href=\"https://doi.org/10.1016/j.sse.2011.01.046\">10.1016/j.sse.2011.01.046</a>","chicago":"Wolff, K., and Ulrich Hilleringmann. “Solution Processed Inverter Based on Zinc Oxide Nanoparticle Thin-Film Transistors with Poly(4-Vinylphenol) Gate Dielectric.” <i>Solid-State Electronics</i> 62, no. 1 (2011): 110–14. <a href=\"https://doi.org/10.1016/j.sse.2011.01.046\">https://doi.org/10.1016/j.sse.2011.01.046</a>.","ieee":"K. Wolff and U. Hilleringmann, “Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric,” <i>Solid-State Electronics</i>, vol. 62, no. 1, pp. 110–114, 2011, doi: <a href=\"https://doi.org/10.1016/j.sse.2011.01.046\">10.1016/j.sse.2011.01.046</a>.","apa":"Wolff, K., &#38; Hilleringmann, U. (2011). Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric. <i>Solid-State Electronics</i>, <i>62</i>(1), 110–114. <a href=\"https://doi.org/10.1016/j.sse.2011.01.046\">https://doi.org/10.1016/j.sse.2011.01.046</a>","short":"K. Wolff, U. Hilleringmann, Solid-State Electronics 62 (2011) 110–114.","mla":"Wolff, K., and Ulrich Hilleringmann. “Solution Processed Inverter Based on Zinc Oxide Nanoparticle Thin-Film Transistors with Poly(4-Vinylphenol) Gate Dielectric.” <i>Solid-State Electronics</i>, vol. 62, no. 1, Elsevier BV, 2011, pp. 110–14, doi:<a href=\"https://doi.org/10.1016/j.sse.2011.01.046\">10.1016/j.sse.2011.01.046</a>.","bibtex":"@article{Wolff_Hilleringmann_2011, title={Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric}, volume={62}, DOI={<a href=\"https://doi.org/10.1016/j.sse.2011.01.046\">10.1016/j.sse.2011.01.046</a>}, number={1}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Wolff, K. and Hilleringmann, Ulrich}, year={2011}, pages={110–114} }"},"publication_identifier":{"issn":["0038-1101"]},"publication_status":"published","doi":"10.1016/j.sse.2011.01.046","volume":62,"author":[{"first_name":"K.","full_name":"Wolff, K.","last_name":"Wolff"},{"id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"}],"date_updated":"2023-03-21T10:20:24Z"},{"publication_status":"published","publication_identifier":{"issn":["0038-1101"]},"issue":"7","year":"2002","citation":{"ama":"Wirth G, Hilleringmann U, Horstmann JT, Goser K. Mesoscopic transport phenomena in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>. 2002;43(7):1245-1250. doi:<a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>","ieee":"G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Mesoscopic transport phenomena in ultrashort channel MOSFETs,” <i>Solid-State Electronics</i>, vol. 43, no. 7, pp. 1245–1250, 2002, doi: <a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>.","chicago":"Wirth, G, Ulrich Hilleringmann, J.T Horstmann, and K Goser. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.” <i>Solid-State Electronics</i> 43, no. 7 (2002): 1245–50. <a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">https://doi.org/10.1016/s0038-1101(99)00060-x</a>.","apa":"Wirth, G., Hilleringmann, U., Horstmann, J. T., &#38; Goser, K. (2002). Mesoscopic transport phenomena in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>, <i>43</i>(7), 1245–1250. <a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">https://doi.org/10.1016/s0038-1101(99)00060-x</a>","mla":"Wirth, G., et al. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.” <i>Solid-State Electronics</i>, vol. 43, no. 7, Elsevier BV, 2002, pp. 1245–50, doi:<a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>.","bibtex":"@article{Wirth_Hilleringmann_Horstmann_Goser_2002, title={Mesoscopic transport phenomena in ultrashort channel MOSFETs}, volume={43}, DOI={<a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>}, number={7}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Wirth, G and Hilleringmann, Ulrich and Horstmann, J.T and Goser, K}, year={2002}, pages={1245–1250} }","short":"G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, Solid-State Electronics 43 (2002) 1245–1250."},"intvolume":"        43","page":"1245-1250","publisher":"Elsevier BV","date_updated":"2023-03-21T09:59:22Z","date_created":"2023-01-25T09:11:50Z","author":[{"first_name":"G","last_name":"Wirth","full_name":"Wirth, G"},{"first_name":"Ulrich","last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich"},{"first_name":"J.T","full_name":"Horstmann, J.T","last_name":"Horstmann"},{"full_name":"Goser, K","last_name":"Goser","first_name":"K"}],"volume":43,"title":"Mesoscopic transport phenomena in ultrashort channel MOSFETs","doi":"10.1016/s0038-1101(99)00060-x","type":"journal_article","publication":"Solid-State Electronics","status":"public","_id":"39886","user_id":"20179","department":[{"_id":"59"}],"keyword":["Materials Chemistry","Electrical and Electronic Engineering","Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}]}]
