---
_id: '39450'
author:
- first_name: Fábio F.
  full_name: Vidor, Fábio F.
  last_name: Vidor
- first_name: Thorsten
  full_name: Meyers, Thorsten
  last_name: Meyers
- first_name: Kathrin
  full_name: Müller, Kathrin
  last_name: Müller
- first_name: Gilson I.
  full_name: Wirth, Gilson I.
  last_name: Wirth
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: Vidor FF, Meyers T, Müller K, Wirth GI, Hilleringmann U. Inverter circuits
    on freestanding flexible substrate using ZnO nanoparticles for cost-efficient
    electronics. <i>Solid-State Electronics</i>. 2017;137:16-21. doi:<a href="https://doi.org/10.1016/j.sse.2017.07.011">10.1016/j.sse.2017.07.011</a>
  apa: Vidor, F. F., Meyers, T., Müller, K., Wirth, G. I., &#38; Hilleringmann, U.
    (2017). Inverter circuits on freestanding flexible substrate using ZnO nanoparticles
    for cost-efficient electronics. <i>Solid-State Electronics</i>, <i>137</i>, 16–21.
    <a href="https://doi.org/10.1016/j.sse.2017.07.011">https://doi.org/10.1016/j.sse.2017.07.011</a>
  bibtex: '@article{Vidor_Meyers_Müller_Wirth_Hilleringmann_2017, title={Inverter
    circuits on freestanding flexible substrate using ZnO nanoparticles for cost-efficient
    electronics}, volume={137}, DOI={<a href="https://doi.org/10.1016/j.sse.2017.07.011">10.1016/j.sse.2017.07.011</a>},
    journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Vidor, Fábio
    F. and Meyers, Thorsten and Müller, Kathrin and Wirth, Gilson I. and Hilleringmann,
    Ulrich}, year={2017}, pages={16–21} }'
  chicago: 'Vidor, Fábio F., Thorsten Meyers, Kathrin Müller, Gilson I. Wirth, and
    Ulrich Hilleringmann. “Inverter Circuits on Freestanding Flexible Substrate Using
    ZnO Nanoparticles for Cost-Efficient Electronics.” <i>Solid-State Electronics</i>
    137 (2017): 16–21. <a href="https://doi.org/10.1016/j.sse.2017.07.011">https://doi.org/10.1016/j.sse.2017.07.011</a>.'
  ieee: 'F. F. Vidor, T. Meyers, K. Müller, G. I. Wirth, and U. Hilleringmann, “Inverter
    circuits on freestanding flexible substrate using ZnO nanoparticles for cost-efficient
    electronics,” <i>Solid-State Electronics</i>, vol. 137, pp. 16–21, 2017, doi:
    <a href="https://doi.org/10.1016/j.sse.2017.07.011">10.1016/j.sse.2017.07.011</a>.'
  mla: Vidor, Fábio F., et al. “Inverter Circuits on Freestanding Flexible Substrate
    Using ZnO Nanoparticles for Cost-Efficient Electronics.” <i>Solid-State Electronics</i>,
    vol. 137, Elsevier BV, 2017, pp. 16–21, doi:<a href="https://doi.org/10.1016/j.sse.2017.07.011">10.1016/j.sse.2017.07.011</a>.
  short: F.F. Vidor, T. Meyers, K. Müller, G.I. Wirth, U. Hilleringmann, Solid-State
    Electronics 137 (2017) 16–21.
date_created: 2023-01-24T11:03:12Z
date_updated: 2023-03-22T10:13:25Z
department:
- _id: '59'
doi: 10.1016/j.sse.2017.07.011
intvolume: '       137'
keyword:
- Materials Chemistry
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 16-21
publication: Solid-State Electronics
publication_identifier:
  issn:
  - 0038-1101
publication_status: published
publisher: Elsevier BV
status: public
title: Inverter circuits on freestanding flexible substrate using ZnO nanoparticles
  for cost-efficient electronics
type: journal_article
user_id: '20179'
volume: 137
year: '2017'
...
---
_id: '39527'
author:
- first_name: K.
  full_name: Wolff, K.
  last_name: Wolff
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: Wolff K, Hilleringmann U. Solution processed inverter based on zinc oxide nanoparticle
    thin-film transistors with poly(4-vinylphenol) gate dielectric. <i>Solid-State
    Electronics</i>. 2011;62(1):110-114. doi:<a href="https://doi.org/10.1016/j.sse.2011.01.046">10.1016/j.sse.2011.01.046</a>
  apa: Wolff, K., &#38; Hilleringmann, U. (2011). Solution processed inverter based
    on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate
    dielectric. <i>Solid-State Electronics</i>, <i>62</i>(1), 110–114. <a href="https://doi.org/10.1016/j.sse.2011.01.046">https://doi.org/10.1016/j.sse.2011.01.046</a>
  bibtex: '@article{Wolff_Hilleringmann_2011, title={Solution processed inverter based
    on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate
    dielectric}, volume={62}, DOI={<a href="https://doi.org/10.1016/j.sse.2011.01.046">10.1016/j.sse.2011.01.046</a>},
    number={1}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Wolff,
    K. and Hilleringmann, Ulrich}, year={2011}, pages={110–114} }'
  chicago: 'Wolff, K., and Ulrich Hilleringmann. “Solution Processed Inverter Based
    on Zinc Oxide Nanoparticle Thin-Film Transistors with Poly(4-Vinylphenol) Gate
    Dielectric.” <i>Solid-State Electronics</i> 62, no. 1 (2011): 110–14. <a href="https://doi.org/10.1016/j.sse.2011.01.046">https://doi.org/10.1016/j.sse.2011.01.046</a>.'
  ieee: 'K. Wolff and U. Hilleringmann, “Solution processed inverter based on zinc
    oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric,”
    <i>Solid-State Electronics</i>, vol. 62, no. 1, pp. 110–114, 2011, doi: <a href="https://doi.org/10.1016/j.sse.2011.01.046">10.1016/j.sse.2011.01.046</a>.'
  mla: Wolff, K., and Ulrich Hilleringmann. “Solution Processed Inverter Based on
    Zinc Oxide Nanoparticle Thin-Film Transistors with Poly(4-Vinylphenol) Gate Dielectric.”
    <i>Solid-State Electronics</i>, vol. 62, no. 1, Elsevier BV, 2011, pp. 110–14,
    doi:<a href="https://doi.org/10.1016/j.sse.2011.01.046">10.1016/j.sse.2011.01.046</a>.
  short: K. Wolff, U. Hilleringmann, Solid-State Electronics 62 (2011) 110–114.
date_created: 2023-01-24T11:57:07Z
date_updated: 2023-03-21T10:20:24Z
department:
- _id: '59'
doi: 10.1016/j.sse.2011.01.046
intvolume: '        62'
issue: '1'
keyword:
- Materials Chemistry
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 110-114
publication: Solid-State Electronics
publication_identifier:
  issn:
  - 0038-1101
publication_status: published
publisher: Elsevier BV
status: public
title: Solution processed inverter based on zinc oxide nanoparticle thin-film transistors
  with poly(4-vinylphenol) gate dielectric
type: journal_article
user_id: '20179'
volume: 62
year: '2011'
...
---
_id: '39886'
author:
- first_name: G
  full_name: Wirth, G
  last_name: Wirth
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: J.T
  full_name: Horstmann, J.T
  last_name: Horstmann
- first_name: K
  full_name: Goser, K
  last_name: Goser
citation:
  ama: Wirth G, Hilleringmann U, Horstmann JT, Goser K. Mesoscopic transport phenomena
    in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>. 2002;43(7):1245-1250.
    doi:<a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>
  apa: Wirth, G., Hilleringmann, U., Horstmann, J. T., &#38; Goser, K. (2002). Mesoscopic
    transport phenomena in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>,
    <i>43</i>(7), 1245–1250. <a href="https://doi.org/10.1016/s0038-1101(99)00060-x">https://doi.org/10.1016/s0038-1101(99)00060-x</a>
  bibtex: '@article{Wirth_Hilleringmann_Horstmann_Goser_2002, title={Mesoscopic transport
    phenomena in ultrashort channel MOSFETs}, volume={43}, DOI={<a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>},
    number={7}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Wirth,
    G and Hilleringmann, Ulrich and Horstmann, J.T and Goser, K}, year={2002}, pages={1245–1250}
    }'
  chicago: 'Wirth, G, Ulrich Hilleringmann, J.T Horstmann, and K Goser. “Mesoscopic
    Transport Phenomena in Ultrashort Channel MOSFETs.” <i>Solid-State Electronics</i>
    43, no. 7 (2002): 1245–50. <a href="https://doi.org/10.1016/s0038-1101(99)00060-x">https://doi.org/10.1016/s0038-1101(99)00060-x</a>.'
  ieee: 'G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Mesoscopic transport
    phenomena in ultrashort channel MOSFETs,” <i>Solid-State Electronics</i>, vol.
    43, no. 7, pp. 1245–1250, 2002, doi: <a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>.'
  mla: Wirth, G., et al. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.”
    <i>Solid-State Electronics</i>, vol. 43, no. 7, Elsevier BV, 2002, pp. 1245–50,
    doi:<a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>.
  short: G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, Solid-State Electronics
    43 (2002) 1245–1250.
date_created: 2023-01-25T09:11:50Z
date_updated: 2023-03-21T09:59:22Z
department:
- _id: '59'
doi: 10.1016/s0038-1101(99)00060-x
intvolume: '        43'
issue: '7'
keyword:
- Materials Chemistry
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 1245-1250
publication: Solid-State Electronics
publication_identifier:
  issn:
  - 0038-1101
publication_status: published
publisher: Elsevier BV
status: public
title: Mesoscopic transport phenomena in ultrashort channel MOSFETs
type: journal_article
user_id: '20179'
volume: 43
year: '2002'
...