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Exchange reactions versus adsorption geometries for Se/GaAs(110). <i>Physical Review B</i>. 1995;50(23):17651-17654. doi:<a href=\"https://doi.org/10.1103/physrevb.50.17651\">10.1103/physrevb.50.17651</a>","bibtex":"@article{Schmidt_Bechstedt_1995, title={Exchange reactions versus adsorption geometries for Se/GaAs(110)}, volume={50}, DOI={<a href=\"https://doi.org/10.1103/physrevb.50.17651\">10.1103/physrevb.50.17651</a>}, number={23}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Bechstedt, F.}, year={1995}, pages={17651–17654} }","mla":"Schmidt, Wolf Gero, and F. Bechstedt. “Exchange Reactions versus Adsorption Geometries for Se/GaAs(110).” <i>Physical Review B</i>, vol. 50, no. 23, 1995, pp. 17651–54, doi:<a href=\"https://doi.org/10.1103/physrevb.50.17651\">10.1103/physrevb.50.17651</a>.","chicago":"Schmidt, Wolf Gero, and F. Bechstedt. “Exchange Reactions versus Adsorption Geometries for Se/GaAs(110).” <i>Physical Review B</i> 50, no. 23 (1995): 17651–54. <a href=\"https://doi.org/10.1103/physrevb.50.17651\">https://doi.org/10.1103/physrevb.50.17651</a>.","short":"W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17651–17654.","apa":"Schmidt, W. G., &#38; Bechstedt, F. (1995). Exchange reactions versus adsorption geometries for Se/GaAs(110). <i>Physical Review B</i>, <i>50</i>(23), 17651–17654. <a href=\"https://doi.org/10.1103/physrevb.50.17651\">https://doi.org/10.1103/physrevb.50.17651</a>","ieee":"W. G. Schmidt and F. Bechstedt, “Exchange reactions versus adsorption geometries for Se/GaAs(110),” <i>Physical Review B</i>, vol. 50, no. 23, pp. 17651–17654, 1995, doi: <a href=\"https://doi.org/10.1103/physrevb.50.17651\">10.1103/physrevb.50.17651</a>."},"date_created":"2019-10-15T09:59:11Z","type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}]},{"issue":"23","publication":"Physical Review B","citation":{"ama":"Schmidt WG, Bechstedt F. Se/GaAs(110): Atomic and electronic structure. <i>Physical Review B</i>. 1995;50(23):17280-17291. doi:<a href=\"https://doi.org/10.1103/physrevb.50.17280\">10.1103/physrevb.50.17280</a>","bibtex":"@article{Schmidt_Bechstedt_1995, title={Se/GaAs(110): Atomic and electronic structure}, volume={50}, DOI={<a href=\"https://doi.org/10.1103/physrevb.50.17280\">10.1103/physrevb.50.17280</a>}, number={23}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Bechstedt, F.}, year={1995}, pages={17280–17291} }","mla":"Schmidt, Wolf Gero, and F. Bechstedt. “Se/GaAs(110): Atomic and Electronic Structure.” <i>Physical Review B</i>, vol. 50, no. 23, 1995, pp. 17280–91, doi:<a href=\"https://doi.org/10.1103/physrevb.50.17280\">10.1103/physrevb.50.17280</a>.","short":"W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17280–17291.","chicago":"Schmidt, Wolf Gero, and F. Bechstedt. “Se/GaAs(110): Atomic and Electronic Structure.” <i>Physical Review B</i> 50, no. 23 (1995): 17280–91. <a href=\"https://doi.org/10.1103/physrevb.50.17280\">https://doi.org/10.1103/physrevb.50.17280</a>.","apa":"Schmidt, W. G., &#38; Bechstedt, F. (1995). Se/GaAs(110): Atomic and electronic structure. <i>Physical Review B</i>, <i>50</i>(23), 17280–17291. <a href=\"https://doi.org/10.1103/physrevb.50.17280\">https://doi.org/10.1103/physrevb.50.17280</a>","ieee":"W. G. Schmidt and F. Bechstedt, “Se/GaAs(110): Atomic and electronic structure,” <i>Physical Review B</i>, vol. 50, no. 23, pp. 17280–17291, 1995, doi: <a href=\"https://doi.org/10.1103/physrevb.50.17280\">10.1103/physrevb.50.17280</a>."},"date_created":"2019-10-15T10:00:45Z","type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"year":"1995","status":"public","title":"Se/GaAs(110): Atomic and electronic structure","author":[{"last_name":"Schmidt","first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","full_name":"Schmidt, Wolf Gero","id":"468"},{"first_name":"F.","last_name":"Bechstedt","full_name":"Bechstedt, F."}],"publication_identifier":{"issn":["0163-1829","1095-3795"]},"date_updated":"2025-12-16T07:38:28Z","publication_status":"published","intvolume":"        50","page":"17280-17291","_id":"13852","language":[{"iso":"eng"}],"doi":"10.1103/physrevb.50.17280","user_id":"16199","volume":50},{"citation":{"mla":"Schmidt, Wolf Gero, et al. “Chemisorption of Antimony on GaAs(110).” <i>Physical Review B</i>, vol. 49, no. 7, 1994, pp. 4731–44, doi:<a href=\"https://doi.org/10.1103/physrevb.49.4731\">10.1103/physrevb.49.4731</a>.","bibtex":"@article{Schmidt_Wenzien_Bechstedt_1994, title={Chemisorption of antimony on GaAs(110)}, volume={49}, DOI={<a href=\"https://doi.org/10.1103/physrevb.49.4731\">10.1103/physrevb.49.4731</a>}, number={7}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Wenzien, B. and Bechstedt, F.}, year={1994}, pages={4731–4744} }","ama":"Schmidt WG, Wenzien B, Bechstedt F. 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