@article{7026,
  author       = {{Zolatanosha, Viktoryia and Reuter, Dirk}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  pages        = {{35--39}},
  publisher    = {{Elsevier BV}},
  title        = {{{Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures}}},
  doi          = {{10.1016/j.mee.2017.05.053}},
  volume       = {{180}},
  year         = {{2017}},
}

@article{3956,
  abstract     = {{In this article we present an integration technique for low-voltage DNTT-based TFTs for flexible electronic applications.
Therefore, a high-k nanocomposite combining the flexibility of its polymericmatrix and the high permittivity
of the incorporated inorganic material was used as gate dielectric layer. The influence of a conventional
photolithography process upon the dielectric layer is analyzed regarding electrical instabilities in the device characteristics.
The impact of an implemented sacrificial layer to reduce chemical stress to the insulating film during
photolithography is evaluated. Furthermore, first inverter circuits were integrated and electrically characterized.
Additionally, the implementation of this sacrificial layer can be used for future complementary circuit design.}},
  author       = {{Meyers, Thorsten and Vidor, Fábio F. and Brassat, Katharina and Lindner, Jörg and Hilleringmann, Ulrich}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  pages        = {{35--39}},
  publisher    = {{Elsevier BV}},
  title        = {{{Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics}}},
  doi          = {{10.1016/j.mee.2016.12.018}},
  volume       = {{174}},
  year         = {{2016}},
}

@article{39447,
  author       = {{Meyers, Thorsten and Vidor, Fábio F. and Brassat, Katharina and Lindner, Jörg K.N. and Hilleringmann, Ulrich}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  pages        = {{35--39}},
  publisher    = {{Elsevier BV}},
  title        = {{{Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics}}},
  doi          = {{10.1016/j.mee.2016.12.018}},
  volume       = {{174}},
  year         = {{2016}},
}

@article{39466,
  author       = {{Vidor, Fábio F. and Meyers, Thorsten and Wirth, Gilson I. and Hilleringmann, Ulrich}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  pages        = {{155--158}},
  publisher    = {{Elsevier BV}},
  title        = {{{ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating technique}}},
  doi          = {{10.1016/j.mee.2016.02.059}},
  volume       = {{159}},
  year         = {{2016}},
}

@article{8728,
  author       = {{Zankovych, S. and Maximov, I. and Shorubalko, I. and Seekamp, J. and Beck, M. and Romanov, S. and Reuter, Dirk and Schafmeister, P. and Wieck, A.D. and Ahopelto, J. and Sotomayor Torres, C.M. and Montelius, L.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  pages        = {{214--220}},
  title        = {{{Nanoimprint-induced effects on electrical and optical properties of quantum well structures}}},
  doi          = {{10.1016/s0167-9317(03)00074-1}},
  year         = {{2003}},
}

@article{39851,
  author       = {{Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  pages        = {{845--852}},
  publisher    = {{Elsevier BV}},
  title        = {{{Nanometer scale organic thin film transistors with Pentacene}}},
  doi          = {{10.1016/s0167-9317(03)00146-1}},
  volume       = {{67-68}},
  year         = {{2003}},
}

@article{8733,
  author       = {{Kähler, D. and Kunze, U. and Reuter, Dirk and Wieck, A.D.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  pages        = {{619--623}},
  title        = {{{Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures}}},
  doi          = {{10.1016/s0167-9317(02)00474-4}},
  year         = {{2002}},
}

@article{39912,
  author       = {{Schönstein, I. and Müller, J. and Hilleringmann, Ulrich and Goser, K.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{363--366}},
  publisher    = {{Elsevier BV}},
  title        = {{{Characterization of submicron NMOS devices due to visible light emission}}},
  doi          = {{10.1016/0167-9317(93)90092-j}},
  volume       = {{21}},
  year         = {{2002}},
}

@article{39914,
  author       = {{Hilleringmann, Ulrich and Goser, K.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{211--214}},
  publisher    = {{Elsevier BV}},
  title        = {{{Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}}},
  doi          = {{10.1016/0167-9317(92)90425-q}},
  volume       = {{19}},
  year         = {{2002}},
}

@article{39899,
  author       = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{431--434}},
  publisher    = {{Elsevier BV}},
  title        = {{{Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique}}},
  doi          = {{10.1016/0167-9317(95)00280-4}},
  volume       = {{30}},
  year         = {{2002}},
}

@article{39882,
  author       = {{Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{525--528}},
  publisher    = {{Elsevier BV}},
  title        = {{{A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV}}},
  doi          = {{10.1016/s0167-9317(00)00370-1}},
  volume       = {{53}},
  year         = {{2002}},
}

@article{39879,
  author       = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{213--216}},
  publisher    = {{Elsevier BV}},
  title        = {{{1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}}},
  doi          = {{10.1016/s0167-9317(00)00299-9}},
  volume       = {{53}},
  year         = {{2002}},
}

@article{39919,
  author       = {{Hilleringmann, Ulrich and Knospe, K. and Heite, C. and Schumacher, K. and Goser, K.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{289--292}},
  publisher    = {{Elsevier BV}},
  title        = {{{A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits}}},
  doi          = {{10.1016/0167-9317(91)90231-2}},
  volume       = {{15}},
  year         = {{2002}},
}

@article{39920,
  author       = {{Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{633--636}},
  publisher    = {{Elsevier BV}},
  title        = {{{Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica}}},
  doi          = {{10.1016/0167-9317(91)90299-s}},
  volume       = {{15}},
  year         = {{2002}},
}

@article{39915,
  author       = {{Hilleringmann, Ulrich and Goser, K.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{211--214}},
  publisher    = {{Elsevier BV}},
  title        = {{{Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}}},
  doi          = {{10.1016/0167-9317(92)90425-q}},
  volume       = {{19}},
  year         = {{2002}},
}

@article{39916,
  author       = {{Adams, S. and Hilleringmann, Ulrich and Goser, K.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{191--194}},
  publisher    = {{Elsevier BV}},
  title        = {{{CMOS compatible micromachining by dry silicon-etching techniques}}},
  doi          = {{10.1016/0167-9317(92)90420-v}},
  volume       = {{19}},
  year         = {{2002}},
}

@article{39889,
  author       = {{Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{413--417}},
  publisher    = {{Elsevier BV}},
  title        = {{{12 kV low current cascaded light triggered switch on one silicon chip}}},
  doi          = {{10.1016/s0167-9317(99)00122-7}},
  volume       = {{46}},
  year         = {{2002}},
}

@article{39877,
  author       = {{Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}},
  issn         = {{0167-9317}},
  journal      = {{Microelectronic Engineering}},
  keywords     = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}},
  number       = {{1-4}},
  pages        = {{569--572}},
  publisher    = {{Elsevier BV}},
  title        = {{{A structure definition technique for 25 nm lines of silicon and related materials}}},
  doi          = {{10.1016/s0167-9317(00)00380-4}},
  volume       = {{53}},
  year         = {{2002}},
}