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Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures. <i>Microelectronic Engineering</i>, <i>180</i>, 35–39. <a href=\"https://doi.org/10.1016/j.mee.2017.05.053\">https://doi.org/10.1016/j.mee.2017.05.053</a>","short":"V. Zolatanosha, D. Reuter, Microelectronic Engineering 180 (2017) 35–39.","chicago":"Zolatanosha, Viktoryia, and Dirk Reuter. “Robust Si 3 N 4 Masks for 100 Nm Selective Area Epitaxy of GaAs-Based Nanostructures.” <i>Microelectronic Engineering</i> 180 (2017): 35–39. <a href=\"https://doi.org/10.1016/j.mee.2017.05.053\">https://doi.org/10.1016/j.mee.2017.05.053</a>.","mla":"Zolatanosha, Viktoryia, and Dirk Reuter. “Robust Si 3 N 4 Masks for 100 Nm Selective Area Epitaxy of GaAs-Based Nanostructures.” <i>Microelectronic Engineering</i>, vol. 180, Elsevier BV, 2017, pp. 35–39, doi:<a href=\"https://doi.org/10.1016/j.mee.2017.05.053\">10.1016/j.mee.2017.05.053</a>.","bibtex":"@article{Zolatanosha_Reuter_2017, title={Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures}, volume={180}, DOI={<a href=\"https://doi.org/10.1016/j.mee.2017.05.053\">10.1016/j.mee.2017.05.053</a>}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Zolatanosha, Viktoryia and Reuter, Dirk}, year={2017}, pages={35–39} }","ama":"Zolatanosha V, Reuter D. Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures. <i>Microelectronic Engineering</i>. 2017;180:35-39. doi:<a href=\"https://doi.org/10.1016/j.mee.2017.05.053\">10.1016/j.mee.2017.05.053</a>"},"publication":"Microelectronic Engineering"},{"language":[{"iso":"eng"}],"doi":"10.1016/j.mee.2016.12.018","publication_identifier":{"issn":["0167-9317"]},"author":[{"full_name":"Meyers, Thorsten","last_name":"Meyers","first_name":"Thorsten"},{"full_name":"Vidor, Fábio F.","first_name":"Fábio F.","last_name":"Vidor"},{"full_name":"Brassat, Katharina","last_name":"Brassat","first_name":"Katharina","id":"11305"},{"id":"20797","last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg"},{"full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"}],"title":"Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics","year":"2016","intvolume":"       174","article_type":"original","date_updated":"2022-01-06T07:00:00Z","publication_status":"published","date_created":"2018-08-20T13:33:05Z","file":[{"content_type":"application/pdf","success":1,"file_id":"3957","file_size":758984,"access_level":"closed","file_name":"Now-voltage DNTT-based thin-film transistors and inverters for flexible electronics.pdf","date_updated":"2018-08-20T13:35:02Z","relation":"main_file","date_created":"2018-08-20T13:35:02Z","creator":"hclaudia"}],"department":[{"_id":"286"},{"_id":"15"}],"type":"journal_article","publication":"Microelectronic Engineering","abstract":[{"lang":"eng","text":"In this article we present an integration technique for low-voltage DNTT-based TFTs for flexible electronic applications.\r\nTherefore, a high-k nanocomposite combining the flexibility of its polymericmatrix and the high permittivity\r\nof the incorporated inorganic material was used as gate dielectric layer. The influence of a conventional\r\nphotolithography process upon the dielectric layer is analyzed regarding electrical instabilities in the device characteristics.\r\nThe impact of an implemented sacrificial layer to reduce chemical stress to the insulating film during\r\nphotolithography is evaluated. Furthermore, first inverter circuits were integrated and electrically characterized.\r\nAdditionally, the implementation of this sacrificial layer can be used for future complementary circuit design."}],"publisher":"Elsevier BV","_id":"3956","page":"35-39","volume":174,"ddc":["530"],"user_id":"55706","status":"public","has_accepted_license":"1","citation":{"chicago":"Meyers, Thorsten, Fábio F. Vidor, Katharina Brassat, Jörg Lindner, and Ulrich Hilleringmann. “Low-Voltage DNTT-Based Thin-Film Transistors and Inverters for Flexible Electronics.” <i>Microelectronic Engineering</i> 174 (2016): 35–39. <a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">https://doi.org/10.1016/j.mee.2016.12.018</a>.","short":"T. Meyers, F.F. Vidor, K. Brassat, J. Lindner, U. Hilleringmann, Microelectronic Engineering 174 (2016) 35–39.","ama":"Meyers T, Vidor FF, Brassat K, Lindner J, Hilleringmann U. Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics. <i>Microelectronic Engineering</i>. 2016;174:35-39. doi:<a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>","bibtex":"@article{Meyers_Vidor_Brassat_Lindner_Hilleringmann_2016, title={Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics}, volume={174}, DOI={<a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Meyers, Thorsten and Vidor, Fábio F. and Brassat, Katharina and Lindner, Jörg and Hilleringmann, Ulrich}, year={2016}, pages={35–39} }","mla":"Meyers, Thorsten, et al. “Low-Voltage DNTT-Based Thin-Film Transistors and Inverters for Flexible Electronics.” <i>Microelectronic Engineering</i>, vol. 174, Elsevier BV, 2016, pp. 35–39, doi:<a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>.","apa":"Meyers, T., Vidor, F. F., Brassat, K., Lindner, J., &#38; Hilleringmann, U. (2016). Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics. <i>Microelectronic Engineering</i>, <i>174</i>, 35–39. <a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">https://doi.org/10.1016/j.mee.2016.12.018</a>","ieee":"T. Meyers, F. F. Vidor, K. Brassat, J. Lindner, and U. Hilleringmann, “Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics,” <i>Microelectronic Engineering</i>, vol. 174, pp. 35–39, 2016."},"file_date_updated":"2018-08-20T13:35:02Z"},{"citation":{"ieee":"T. Meyers, F. F. Vidor, K. Brassat, J. K. N. Lindner, and U. Hilleringmann, “Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics,” <i>Microelectronic Engineering</i>, vol. 174, pp. 35–39, 2016, doi: <a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>.","apa":"Meyers, T., Vidor, F. F., Brassat, K., Lindner, J. K. 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Hilleringmann, Microelectronic Engineering 174 (2016) 35–39.","mla":"Meyers, Thorsten, et al. “Low-Voltage DNTT-Based Thin-Film Transistors and Inverters for Flexible Electronics.” <i>Microelectronic Engineering</i>, vol. 174, Elsevier BV, 2016, pp. 35–39, doi:<a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>.","bibtex":"@article{Meyers_Vidor_Brassat_Lindner_Hilleringmann_2016, title={Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics}, volume={174}, DOI={<a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Meyers, Thorsten and Vidor, Fábio F. and Brassat, Katharina and Lindner, Jörg K.N. and Hilleringmann, Ulrich}, year={2016}, pages={35–39} }","ama":"Meyers T, Vidor FF, Brassat K, Lindner JKN, Hilleringmann U. 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ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating technique. <i>Microelectronic Engineering</i>. 2016;159:155-158. doi:<a href=\"https://doi.org/10.1016/j.mee.2016.02.059\">10.1016/j.mee.2016.02.059</a>","ieee":"F. F. Vidor, T. Meyers, G. I. Wirth, and U. Hilleringmann, “ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating technique,” <i>Microelectronic Engineering</i>, vol. 159, pp. 155–158, 2016, doi: <a href=\"https://doi.org/10.1016/j.mee.2016.02.059\">10.1016/j.mee.2016.02.059</a>.","apa":"Vidor, F. F., Meyers, T., Wirth, G. I., &#38; Hilleringmann, U. (2016). ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating technique. <i>Microelectronic Engineering</i>, <i>159</i>, 155–158. <a href=\"https://doi.org/10.1016/j.mee.2016.02.059\">https://doi.org/10.1016/j.mee.2016.02.059</a>","chicago":"Vidor, Fábio F., Thorsten Meyers, Gilson I. 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Zankovych, I. Maximov, I. Shorubalko, J. Seekamp, M. Beck, S. Romanov, D. Reuter, P. Schafmeister, A.D. Wieck, J. Ahopelto, C.M. Sotomayor Torres, L. Montelius, Microelectronic Engineering (2003) 214–220.","chicago":"Zankovych, S., I. Maximov, I. Shorubalko, J. Seekamp, M. Beck, S. Romanov, Dirk Reuter, et al. “Nanoimprint-Induced Effects on Electrical and Optical Properties of Quantum Well Structures.” <i>Microelectronic Engineering</i>, 2003, 214–20. <a href=\"https://doi.org/10.1016/s0167-9317(03)00074-1\">https://doi.org/10.1016/s0167-9317(03)00074-1</a>.","apa":"Zankovych, S., Maximov, I., Shorubalko, I., Seekamp, J., Beck, M., Romanov, S., … Montelius, L. (2003). Nanoimprint-induced effects on electrical and optical properties of quantum well structures. <i>Microelectronic Engineering</i>, 214–220. <a href=\"https://doi.org/10.1016/s0167-9317(03)00074-1\">https://doi.org/10.1016/s0167-9317(03)00074-1</a>","ieee":"S. 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Nanoimprint-induced effects on electrical and optical properties of quantum well structures. <i>Microelectronic Engineering</i>. 2003:214-220. doi:<a href=\"https://doi.org/10.1016/s0167-9317(03)00074-1\">10.1016/s0167-9317(03)00074-1</a>","bibtex":"@article{Zankovych_Maximov_Shorubalko_Seekamp_Beck_Romanov_Reuter_Schafmeister_Wieck_Ahopelto_et al._2003, title={Nanoimprint-induced effects on electrical and optical properties of quantum well structures}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(03)00074-1\">10.1016/s0167-9317(03)00074-1</a>}, journal={Microelectronic Engineering}, author={Zankovych, S. and Maximov, I. and Shorubalko, I. and Seekamp, J. and Beck, M. and Romanov, S. and Reuter, Dirk and Schafmeister, P. and Wieck, A.D. and Ahopelto, J. and et al.}, year={2003}, pages={214–220} }","mla":"Zankovych, S., et al. “Nanoimprint-Induced Effects on Electrical and Optical Properties of Quantum Well Structures.” <i>Microelectronic Engineering</i>, 2003, pp. 214–20, doi:<a href=\"https://doi.org/10.1016/s0167-9317(03)00074-1\">10.1016/s0167-9317(03)00074-1</a>."},"publication":"Microelectronic Engineering","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-03-28T15:05:35Z"},{"page":"845-852","language":[{"iso":"eng"}],"_id":"39851","publisher":"Elsevier BV","user_id":"20179","doi":"10.1016/s0167-9317(03)00146-1","volume":"67-68","year":"2003","status":"public","title":"Nanometer scale organic thin film transistors with Pentacene","author":[{"full_name":"Pannemann, Ch.","last_name":"Pannemann","first_name":"Ch."},{"first_name":"T.","last_name":"Diekmann","full_name":"Diekmann, T."},{"id":"20179","first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich"}],"publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","date_updated":"2023-03-21T10:04:43Z","date_created":"2023-01-25T08:39:40Z","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","department":[{"_id":"59"}],"publication":"Microelectronic Engineering","citation":{"apa":"Pannemann, Ch., Diekmann, T., &#38; Hilleringmann, U. 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Nanometer scale organic thin film transistors with Pentacene. <i>Microelectronic Engineering</i>. 2003;67-68:845-852. doi:<a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>","bibtex":"@article{Pannemann_Diekmann_Hilleringmann_2003, title={Nanometer scale organic thin film transistors with Pentacene}, volume={67–68}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}, year={2003}, pages={845–852} }"}},{"citation":{"ama":"Kähler D, Kunze U, Reuter D, Wieck AD. Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures. <i>Microelectronic Engineering</i>. 2002:619-623. doi:<a href=\"https://doi.org/10.1016/s0167-9317(02)00474-4\">10.1016/s0167-9317(02)00474-4</a>","bibtex":"@article{Kähler_Kunze_Reuter_Wieck_2002, title={Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(02)00474-4\">10.1016/s0167-9317(02)00474-4</a>}, journal={Microelectronic Engineering}, author={Kähler, D. and Kunze, U. and Reuter, Dirk and Wieck, A.D.}, year={2002}, pages={619–623} }","mla":"Kähler, D., et al. “Quantum Wire Fabrication from Compensating-Layer GaAs–AlGaAs Heterostructures.” <i>Microelectronic Engineering</i>, 2002, pp. 619–23, doi:<a href=\"https://doi.org/10.1016/s0167-9317(02)00474-4\">10.1016/s0167-9317(02)00474-4</a>.","chicago":"Kähler, D., U. Kunze, Dirk Reuter, and A.D. 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