[{"date_created":"2019-01-28T10:07:25Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"publication":"Microelectronic Engineering","citation":{"ama":"Zolatanosha V, Reuter D. Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures. <i>Microelectronic Engineering</i>. 2017;180:35-39. doi:<a href=\"https://doi.org/10.1016/j.mee.2017.05.053\">10.1016/j.mee.2017.05.053</a>","bibtex":"@article{Zolatanosha_Reuter_2017, title={Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures}, volume={180}, DOI={<a href=\"https://doi.org/10.1016/j.mee.2017.05.053\">10.1016/j.mee.2017.05.053</a>}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Zolatanosha, Viktoryia and Reuter, Dirk}, year={2017}, pages={35–39} }","mla":"Zolatanosha, Viktoryia, and Dirk Reuter. “Robust Si 3 N 4 Masks for 100 Nm Selective Area Epitaxy of GaAs-Based Nanostructures.” <i>Microelectronic Engineering</i>, vol. 180, Elsevier BV, 2017, pp. 35–39, doi:<a href=\"https://doi.org/10.1016/j.mee.2017.05.053\">10.1016/j.mee.2017.05.053</a>.","chicago":"Zolatanosha, Viktoryia, and Dirk Reuter. “Robust Si 3 N 4 Masks for 100 Nm Selective Area Epitaxy of GaAs-Based Nanostructures.” <i>Microelectronic Engineering</i> 180 (2017): 35–39. <a href=\"https://doi.org/10.1016/j.mee.2017.05.053\">https://doi.org/10.1016/j.mee.2017.05.053</a>.","short":"V. Zolatanosha, D. Reuter, Microelectronic Engineering 180 (2017) 35–39.","apa":"Zolatanosha, V., &#38; Reuter, D. (2017). Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures. <i>Microelectronic Engineering</i>, <i>180</i>, 35–39. <a href=\"https://doi.org/10.1016/j.mee.2017.05.053\">https://doi.org/10.1016/j.mee.2017.05.053</a>","ieee":"V. Zolatanosha and D. Reuter, “Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures,” <i>Microelectronic Engineering</i>, vol. 180, pp. 35–39, 2017."},"page":"35-39","_id":"7026","publisher":"Elsevier BV","language":[{"iso":"eng"}],"user_id":"42514","doi":"10.1016/j.mee.2017.05.053","volume":180,"year":"2017","title":"Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures","status":"public","publication_identifier":{"issn":["0167-9317"]},"author":[{"first_name":"Viktoryia","last_name":"Zolatanosha","full_name":"Zolatanosha, Viktoryia"},{"id":"37763","first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk"}],"publication_status":"published","date_updated":"2022-01-06T07:03:26Z","intvolume":"       180"},{"has_accepted_license":"1","status":"public","volume":174,"user_id":"55706","ddc":["530"],"_id":"3956","publisher":"Elsevier BV","page":"35-39","citation":{"ieee":"T. Meyers, F. F. Vidor, K. Brassat, J. Lindner, and U. Hilleringmann, “Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics,” <i>Microelectronic Engineering</i>, vol. 174, pp. 35–39, 2016.","apa":"Meyers, T., Vidor, F. F., Brassat, K., Lindner, J., &#38; Hilleringmann, U. (2016). Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics. <i>Microelectronic Engineering</i>, <i>174</i>, 35–39. <a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">https://doi.org/10.1016/j.mee.2016.12.018</a>","mla":"Meyers, Thorsten, et al. “Low-Voltage DNTT-Based Thin-Film Transistors and Inverters for Flexible Electronics.” <i>Microelectronic Engineering</i>, vol. 174, Elsevier BV, 2016, pp. 35–39, doi:<a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>.","bibtex":"@article{Meyers_Vidor_Brassat_Lindner_Hilleringmann_2016, title={Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics}, volume={174}, DOI={<a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Meyers, Thorsten and Vidor, Fábio F. and Brassat, Katharina and Lindner, Jörg and Hilleringmann, Ulrich}, year={2016}, pages={35–39} }","short":"T. Meyers, F.F. Vidor, K. Brassat, J. Lindner, U. Hilleringmann, Microelectronic Engineering 174 (2016) 35–39.","ama":"Meyers T, Vidor FF, Brassat K, Lindner J, Hilleringmann U. Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics. <i>Microelectronic Engineering</i>. 2016;174:35-39. doi:<a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>","chicago":"Meyers, Thorsten, Fábio F. Vidor, Katharina Brassat, Jörg Lindner, and Ulrich Hilleringmann. “Low-Voltage DNTT-Based Thin-Film Transistors and Inverters for Flexible Electronics.” <i>Microelectronic Engineering</i> 174 (2016): 35–39. <a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">https://doi.org/10.1016/j.mee.2016.12.018</a>."},"file_date_updated":"2018-08-20T13:35:02Z","article_type":"original","intvolume":"       174","publication_status":"published","date_updated":"2022-01-06T07:00:00Z","author":[{"full_name":"Meyers, Thorsten","first_name":"Thorsten","last_name":"Meyers"},{"full_name":"Vidor, Fábio F.","last_name":"Vidor","first_name":"Fábio F."},{"id":"11305","first_name":"Katharina","last_name":"Brassat","full_name":"Brassat, Katharina"},{"last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797"},{"last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich"}],"publication_identifier":{"issn":["0167-9317"]},"title":"Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics","year":"2016","doi":"10.1016/j.mee.2016.12.018","language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"In this article we present an integration technique for low-voltage DNTT-based TFTs for flexible electronic applications.\r\nTherefore, a high-k nanocomposite combining the flexibility of its polymericmatrix and the high permittivity\r\nof the incorporated inorganic material was used as gate dielectric layer. The influence of a conventional\r\nphotolithography process upon the dielectric layer is analyzed regarding electrical instabilities in the device characteristics.\r\nThe impact of an implemented sacrificial layer to reduce chemical stress to the insulating film during\r\nphotolithography is evaluated. Furthermore, first inverter circuits were integrated and electrically characterized.\r\nAdditionally, the implementation of this sacrificial layer can be used for future complementary circuit design."}],"publication":"Microelectronic Engineering","department":[{"_id":"286"},{"_id":"15"}],"type":"journal_article","date_created":"2018-08-20T13:33:05Z","file":[{"file_id":"3957","success":1,"content_type":"application/pdf","relation":"main_file","date_updated":"2018-08-20T13:35:02Z","file_name":"Now-voltage DNTT-based thin-film transistors and inverters for flexible electronics.pdf","file_size":758984,"access_level":"closed","date_created":"2018-08-20T13:35:02Z","creator":"hclaudia"}]},{"citation":{"bibtex":"@article{Meyers_Vidor_Brassat_Lindner_Hilleringmann_2016, title={Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics}, volume={174}, DOI={<a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Meyers, Thorsten and Vidor, Fábio F. and Brassat, Katharina and Lindner, Jörg K.N. and Hilleringmann, Ulrich}, year={2016}, pages={35–39} }","ama":"Meyers T, Vidor FF, Brassat K, Lindner JKN, Hilleringmann U. Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics. <i>Microelectronic Engineering</i>. 2016;174:35-39. doi:<a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>","mla":"Meyers, Thorsten, et al. “Low-Voltage DNTT-Based Thin-Film Transistors and Inverters for Flexible Electronics.” <i>Microelectronic Engineering</i>, vol. 174, Elsevier BV, 2016, pp. 35–39, doi:<a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>.","short":"T. Meyers, F.F. Vidor, K. Brassat, J.K.N. Lindner, U. Hilleringmann, Microelectronic Engineering 174 (2016) 35–39.","chicago":"Meyers, Thorsten, Fábio F. Vidor, Katharina Brassat, Jörg K.N. Lindner, and Ulrich Hilleringmann. “Low-Voltage DNTT-Based Thin-Film Transistors and Inverters for Flexible Electronics.” <i>Microelectronic Engineering</i> 174 (2016): 35–39. <a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">https://doi.org/10.1016/j.mee.2016.12.018</a>.","ieee":"T. Meyers, F. F. Vidor, K. Brassat, J. K. N. Lindner, and U. Hilleringmann, “Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics,” <i>Microelectronic Engineering</i>, vol. 174, pp. 35–39, 2016, doi: <a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>.","apa":"Meyers, T., Vidor, F. F., Brassat, K., Lindner, J. K. N., &#38; Hilleringmann, U. (2016). Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics. <i>Microelectronic Engineering</i>, <i>174</i>, 35–39. <a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">https://doi.org/10.1016/j.mee.2016.12.018</a>"},"user_id":"20179","volume":174,"page":"35-39","_id":"39447","publisher":"Elsevier BV","status":"public","type":"journal_article","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}],"date_created":"2023-01-24T10:59:12Z","publication":"Microelectronic Engineering","doi":"10.1016/j.mee.2016.12.018","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2023-03-22T10:16:34Z","intvolume":"       174","year":"2016","title":"Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics","publication_identifier":{"issn":["0167-9317"]},"author":[{"first_name":"Thorsten","last_name":"Meyers","full_name":"Meyers, Thorsten"},{"last_name":"Vidor","first_name":"Fábio F.","full_name":"Vidor, Fábio F."},{"first_name":"Katharina","last_name":"Brassat","full_name":"Brassat, Katharina"},{"full_name":"Lindner, Jörg K.N.","last_name":"Lindner","first_name":"Jörg K.N."},{"last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179"}]},{"year":"2016","title":"ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating technique","publication_identifier":{"issn":["0167-9317"]},"author":[{"first_name":"Fábio F.","last_name":"Vidor","full_name":"Vidor, Fábio F."},{"first_name":"Thorsten","last_name":"Meyers","full_name":"Meyers, Thorsten"},{"full_name":"Wirth, Gilson I.","first_name":"Gilson I.","last_name":"Wirth"},{"full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich","id":"20179"}],"date_updated":"2023-03-22T10:22:16Z","publication_status":"published","intvolume":"       159","language":[{"iso":"eng"}],"doi":"10.1016/j.mee.2016.02.059","publication":"Microelectronic Engineering","date_created":"2023-01-24T11:14:45Z","type":"journal_article","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}],"status":"public","page":"155-158","_id":"39466","publisher":"Elsevier BV","user_id":"20179","volume":159,"citation":{"short":"F.F. Vidor, T. Meyers, G.I. Wirth, U. Hilleringmann, Microelectronic Engineering 159 (2016) 155–158.","chicago":"Vidor, Fábio F., Thorsten Meyers, Gilson I. Wirth, and Ulrich Hilleringmann. “ZnO Nanoparticle Thin-Film Transistors on Flexible Substrate Using Spray-Coating Technique.” <i>Microelectronic Engineering</i> 159 (2016): 155–58. <a href=\"https://doi.org/10.1016/j.mee.2016.02.059\">https://doi.org/10.1016/j.mee.2016.02.059</a>.","apa":"Vidor, F. F., Meyers, T., Wirth, G. I., &#38; Hilleringmann, U. (2016). ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating technique. <i>Microelectronic Engineering</i>, <i>159</i>, 155–158. <a href=\"https://doi.org/10.1016/j.mee.2016.02.059\">https://doi.org/10.1016/j.mee.2016.02.059</a>","ieee":"F. F. Vidor, T. Meyers, G. I. Wirth, and U. Hilleringmann, “ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating technique,” <i>Microelectronic Engineering</i>, vol. 159, pp. 155–158, 2016, doi: <a href=\"https://doi.org/10.1016/j.mee.2016.02.059\">10.1016/j.mee.2016.02.059</a>.","ama":"Vidor FF, Meyers T, Wirth GI, Hilleringmann U. ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating technique. <i>Microelectronic Engineering</i>. 2016;159:155-158. doi:<a href=\"https://doi.org/10.1016/j.mee.2016.02.059\">10.1016/j.mee.2016.02.059</a>","bibtex":"@article{Vidor_Meyers_Wirth_Hilleringmann_2016, title={ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating technique}, volume={159}, DOI={<a href=\"https://doi.org/10.1016/j.mee.2016.02.059\">10.1016/j.mee.2016.02.059</a>}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Vidor, Fábio F. and Meyers, Thorsten and Wirth, Gilson I. and Hilleringmann, Ulrich}, year={2016}, pages={155–158} }","mla":"Vidor, Fábio F., et al. “ZnO Nanoparticle Thin-Film Transistors on Flexible Substrate Using Spray-Coating Technique.” <i>Microelectronic Engineering</i>, vol. 159, Elsevier BV, 2016, pp. 155–58, doi:<a href=\"https://doi.org/10.1016/j.mee.2016.02.059\">10.1016/j.mee.2016.02.059</a>."}},{"publication":"Microelectronic Engineering","citation":{"bibtex":"@article{Zankovych_Maximov_Shorubalko_Seekamp_Beck_Romanov_Reuter_Schafmeister_Wieck_Ahopelto_et al._2003, title={Nanoimprint-induced effects on electrical and optical properties of quantum well structures}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(03)00074-1\">10.1016/s0167-9317(03)00074-1</a>}, journal={Microelectronic Engineering}, author={Zankovych, S. and Maximov, I. and Shorubalko, I. and Seekamp, J. and Beck, M. and Romanov, S. and Reuter, Dirk and Schafmeister, P. and Wieck, A.D. and Ahopelto, J. and et al.}, year={2003}, pages={214–220} }","ama":"Zankovych S, Maximov I, Shorubalko I, et al. Nanoimprint-induced effects on electrical and optical properties of quantum well structures. <i>Microelectronic Engineering</i>. 2003:214-220. doi:<a href=\"https://doi.org/10.1016/s0167-9317(03)00074-1\">10.1016/s0167-9317(03)00074-1</a>","mla":"Zankovych, S., et al. “Nanoimprint-Induced Effects on Electrical and Optical Properties of Quantum Well Structures.” <i>Microelectronic Engineering</i>, 2003, pp. 214–20, doi:<a href=\"https://doi.org/10.1016/s0167-9317(03)00074-1\">10.1016/s0167-9317(03)00074-1</a>.","chicago":"Zankovych, S., I. Maximov, I. Shorubalko, J. Seekamp, M. Beck, S. Romanov, Dirk Reuter, et al. “Nanoimprint-Induced Effects on Electrical and Optical Properties of Quantum Well Structures.” <i>Microelectronic Engineering</i>, 2003, 214–20. <a href=\"https://doi.org/10.1016/s0167-9317(03)00074-1\">https://doi.org/10.1016/s0167-9317(03)00074-1</a>.","short":"S. Zankovych, I. Maximov, I. Shorubalko, J. Seekamp, M. Beck, S. Romanov, D. Reuter, P. Schafmeister, A.D. Wieck, J. Ahopelto, C.M. Sotomayor Torres, L. Montelius, Microelectronic Engineering (2003) 214–220.","ieee":"S. Zankovych <i>et al.</i>, “Nanoimprint-induced effects on electrical and optical properties of quantum well structures,” <i>Microelectronic Engineering</i>, pp. 214–220, 2003.","apa":"Zankovych, S., Maximov, I., Shorubalko, I., Seekamp, J., Beck, M., Romanov, S., … Montelius, L. (2003). Nanoimprint-induced effects on electrical and optical properties of quantum well structures. <i>Microelectronic Engineering</i>, 214–220. <a href=\"https://doi.org/10.1016/s0167-9317(03)00074-1\">https://doi.org/10.1016/s0167-9317(03)00074-1</a>"},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-03-28T15:05:35Z","date_updated":"2022-01-06T07:03:59Z","publication_status":"published","year":"2003","title":"Nanoimprint-induced effects on electrical and optical properties of quantum well structures","status":"public","author":[{"full_name":"Zankovych, S.","first_name":"S.","last_name":"Zankovych"},{"last_name":"Maximov","first_name":"I.","full_name":"Maximov, I."},{"last_name":"Shorubalko","first_name":"I.","full_name":"Shorubalko, I."},{"last_name":"Seekamp","first_name":"J.","full_name":"Seekamp, J."},{"first_name":"M.","last_name":"Beck","full_name":"Beck, M."},{"first_name":"S.","last_name":"Romanov","full_name":"Romanov, S."},{"id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"full_name":"Schafmeister, P.","first_name":"P.","last_name":"Schafmeister"},{"last_name":"Wieck","first_name":"A.D.","full_name":"Wieck, A.D."},{"full_name":"Ahopelto, J.","first_name":"J.","last_name":"Ahopelto"},{"last_name":"Sotomayor Torres","first_name":"C.M.","full_name":"Sotomayor Torres, C.M."},{"full_name":"Montelius, L.","first_name":"L.","last_name":"Montelius"}],"publication_identifier":{"issn":["0167-9317"]},"doi":"10.1016/s0167-9317(03)00074-1","user_id":"42514","page":"214-220","language":[{"iso":"eng"}],"_id":"8728"},{"date_updated":"2023-03-21T10:04:43Z","publication_status":"published","author":[{"last_name":"Pannemann","first_name":"Ch.","full_name":"Pannemann, Ch."},{"last_name":"Diekmann","first_name":"T.","full_name":"Diekmann, T."},{"last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179"}],"publication_identifier":{"issn":["0167-9317"]},"year":"2003","title":"Nanometer scale organic thin film transistors with Pentacene","status":"public","volume":"67-68","doi":"10.1016/s0167-9317(03)00146-1","user_id":"20179","_id":"39851","language":[{"iso":"eng"}],"publisher":"Elsevier BV","page":"845-852","citation":{"short":"Ch. Pannemann, T. Diekmann, U. Hilleringmann, Microelectronic Engineering 67–68 (2003) 845–852.","chicago":"Pannemann, Ch., T. Diekmann, and Ulrich Hilleringmann. “Nanometer Scale Organic Thin Film Transistors with Pentacene.” <i>Microelectronic Engineering</i> 67–68 (2003): 845–52. <a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">https://doi.org/10.1016/s0167-9317(03)00146-1</a>.","ieee":"Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “Nanometer scale organic thin film transistors with Pentacene,” <i>Microelectronic Engineering</i>, vol. 67–68, pp. 845–852, 2003, doi: <a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>.","apa":"Pannemann, Ch., Diekmann, T., &#38; Hilleringmann, U. (2003). Nanometer scale organic thin film transistors with Pentacene. <i>Microelectronic Engineering</i>, <i>67–68</i>, 845–852. <a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">https://doi.org/10.1016/s0167-9317(03)00146-1</a>","bibtex":"@article{Pannemann_Diekmann_Hilleringmann_2003, title={Nanometer scale organic thin film transistors with Pentacene}, volume={67–68}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}, year={2003}, pages={845–852} }","ama":"Pannemann Ch, Diekmann T, Hilleringmann U. Nanometer scale organic thin film transistors with Pentacene. <i>Microelectronic Engineering</i>. 2003;67-68:845-852. doi:<a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>","mla":"Pannemann, Ch., et al. “Nanometer Scale Organic Thin Film Transistors with Pentacene.” <i>Microelectronic Engineering</i>, vol. 67–68, Elsevier BV, 2003, pp. 845–52, doi:<a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>."},"publication":"Microelectronic Engineering","department":[{"_id":"59"}],"type":"journal_article","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"date_created":"2023-01-25T08:39:40Z"},{"user_id":"42514","doi":"10.1016/s0167-9317(02)00474-4","_id":"8733","language":[{"iso":"eng"}],"page":"619-623","publication_status":"published","date_updated":"2022-01-06T07:04:00Z","author":[{"full_name":"Kähler, D.","first_name":"D.","last_name":"Kähler"},{"first_name":"U.","last_name":"Kunze","full_name":"Kunze, U."},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"first_name":"A.D.","last_name":"Wieck","full_name":"Wieck, A.D."}],"publication_identifier":{"issn":["0167-9317"]},"title":"Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures","status":"public","year":"2002","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-03-28T15:09:49Z","citation":{"short":"D. Kähler, U. Kunze, D. Reuter, A.D. Wieck, Microelectronic Engineering (2002) 619–623.","chicago":"Kähler, D., U. Kunze, Dirk Reuter, and A.D. Wieck. “Quantum Wire Fabrication from Compensating-Layer GaAs–AlGaAs Heterostructures.” <i>Microelectronic Engineering</i>, 2002, 619–23. <a href=\"https://doi.org/10.1016/s0167-9317(02)00474-4\">https://doi.org/10.1016/s0167-9317(02)00474-4</a>.","apa":"Kähler, D., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2002). Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures. <i>Microelectronic Engineering</i>, 619–623. <a href=\"https://doi.org/10.1016/s0167-9317(02)00474-4\">https://doi.org/10.1016/s0167-9317(02)00474-4</a>","ieee":"D. Kähler, U. Kunze, D. Reuter, and A. D. Wieck, “Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures,” <i>Microelectronic Engineering</i>, pp. 619–623, 2002.","ama":"Kähler D, Kunze U, Reuter D, Wieck AD. Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures. <i>Microelectronic Engineering</i>. 2002:619-623. doi:<a href=\"https://doi.org/10.1016/s0167-9317(02)00474-4\">10.1016/s0167-9317(02)00474-4</a>","bibtex":"@article{Kähler_Kunze_Reuter_Wieck_2002, title={Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(02)00474-4\">10.1016/s0167-9317(02)00474-4</a>}, journal={Microelectronic Engineering}, author={Kähler, D. and Kunze, U. and Reuter, Dirk and Wieck, A.D.}, year={2002}, pages={619–623} }","mla":"Kähler, D., et al. “Quantum Wire Fabrication from Compensating-Layer GaAs–AlGaAs Heterostructures.” <i>Microelectronic Engineering</i>, 2002, pp. 619–23, doi:<a href=\"https://doi.org/10.1016/s0167-9317(02)00474-4\">10.1016/s0167-9317(02)00474-4</a>."},"publication":"Microelectronic Engineering"},{"intvolume":"        21","date_updated":"2023-03-21T09:50:03Z","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"author":[{"last_name":"Schönstein","first_name":"I.","full_name":"Schönstein, I."},{"full_name":"Müller, J.","last_name":"Müller","first_name":"J."},{"id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann"},{"first_name":"K.","last_name":"Goser","full_name":"Goser, K."}],"title":"Characterization of submicron NMOS devices due to visible light emission","year":"2002","doi":"10.1016/0167-9317(93)90092-j","language":[{"iso":"eng"}],"issue":"1-4","publication":"Microelectronic Engineering","department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","date_created":"2023-01-25T09:26:21Z","status":"public","volume":21,"user_id":"20179","_id":"39912","publisher":"Elsevier BV","page":"363-366","citation":{"mla":"Schönstein, I., et al. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.” <i>Microelectronic Engineering</i>, vol. 21, no. 1–4, Elsevier BV, 2002, pp. 363–66, doi:<a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>.","ama":"Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron NMOS devices due to visible light emission. <i>Microelectronic Engineering</i>. 2002;21(1-4):363-366. doi:<a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>","bibtex":"@article{Schönstein_Müller_Hilleringmann_Goser_2002, title={Characterization of submicron NMOS devices due to visible light emission}, volume={21}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Schönstein, I. and Müller, J. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={363–366} }","apa":"Schönstein, I., Müller, J., Hilleringmann, U., &#38; Goser, K. (2002). Characterization of submicron NMOS devices due to visible light emission. <i>Microelectronic Engineering</i>, <i>21</i>(1–4), 363–366. <a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">https://doi.org/10.1016/0167-9317(93)90092-j</a>","ieee":"I. Schönstein, J. Müller, U. Hilleringmann, and K. Goser, “Characterization of submicron NMOS devices due to visible light emission,” <i>Microelectronic Engineering</i>, vol. 21, no. 1–4, pp. 363–366, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>.","short":"I. Schönstein, J. Müller, U. Hilleringmann, K. Goser, Microelectronic Engineering 21 (2002) 363–366.","chicago":"Schönstein, I., J. Müller, Ulrich Hilleringmann, and K. Goser. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.” <i>Microelectronic Engineering</i> 21, no. 1–4 (2002): 363–66. <a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">https://doi.org/10.1016/0167-9317(93)90092-j</a>."}},{"citation":{"mla":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","bibtex":"@article{Hilleringmann_Goser_2002, title={Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }","ama":"Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>. 2002;19(1-4):211-214. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>","ieee":"U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","apa":"Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 211–214. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>","chicago":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 211–14. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>.","short":"U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214."},"_id":"39914","publisher":"Elsevier BV","page":"211-214","volume":19,"user_id":"20179","status":"public","date_created":"2023-01-25T09:27:23Z","department":[{"_id":"59"}],"type":"journal_article","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"issue":"1-4","publication":"Microelectronic Engineering","language":[{"iso":"eng"}],"doi":"10.1016/0167-9317(92)90425-q","author":[{"id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann"},{"full_name":"Goser, K.","first_name":"K.","last_name":"Goser"}],"publication_identifier":{"issn":["0167-9317"]},"year":"2002","title":"Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon","intvolume":"        19","publication_status":"published","date_updated":"2023-03-21T09:49:25Z"},{"citation":{"apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. <i>Microelectronic Engineering</i>, <i>30</i>(1–4), 431–434. <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">https://doi.org/10.1016/0167-9317(95)00280-4</a>","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique,” <i>Microelectronic Engineering</i>, vol. 30, no. 1–4, pp. 431–434, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>.","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 30 (2002) 431–434.","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” <i>Microelectronic Engineering</i> 30, no. 1–4 (2002): 431–34. <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">https://doi.org/10.1016/0167-9317(95)00280-4</a>.","mla":"Horstmann, J. T., et al. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” <i>Microelectronic Engineering</i>, vol. 30, no. 1–4, Elsevier BV, 2002, pp. 431–34, doi:<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>.","ama":"Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. <i>Microelectronic Engineering</i>. 2002;30(1-4):431-434. doi:<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique}, volume={30}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={431–434} }"},"status":"public","publisher":"Elsevier BV","_id":"39899","page":"431-434","volume":30,"user_id":"20179","issue":"1-4","publication":"Microelectronic Engineering","date_created":"2023-01-25T09:20:20Z","department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","author":[{"last_name":"Horstmann","first_name":"J.T.","full_name":"Horstmann, J.T."},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"},{"full_name":"Goser, K.","first_name":"K.","last_name":"Goser"}],"publication_identifier":{"issn":["0167-9317"]},"title":"Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique","year":"2002","intvolume":"        30","date_updated":"2023-03-21T09:53:55Z","publication_status":"published","language":[{"iso":"eng"}],"doi":"10.1016/0167-9317(95)00280-4"},{"doi":"10.1016/s0167-9317(00)00370-1","language":[{"iso":"eng"}],"date_updated":"2023-03-21T10:00:06Z","publication_status":"published","intvolume":"        53","title":"A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV","year":"2002","author":[{"last_name":"Mankowski","first_name":"V.","full_name":"Mankowski, V."},{"full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich","id":"20179"},{"first_name":"K.","last_name":"Schumacher","full_name":"Schumacher, K."}],"publication_identifier":{"issn":["0167-9317"]},"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","department":[{"_id":"59"}],"date_created":"2023-01-25T09:10:13Z","publication":"Microelectronic Engineering","issue":"1-4","user_id":"20179","volume":53,"page":"525-528","_id":"39882","publisher":"Elsevier BV","status":"public","citation":{"mla":"Mankowski, V., et al. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 525–28, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>.","ama":"Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. <i>Microelectronic Engineering</i>. 2002;53(1-4):525-528. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>","bibtex":"@article{Mankowski_Hilleringmann_Schumacher_2002, title={A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={525–528} }","apa":"Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 525–528. <a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">https://doi.org/10.1016/s0167-9317(00)00370-1</a>","ieee":"V. Mankowski, U. Hilleringmann, and K. Schumacher, “A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 525–528, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>.","short":"V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 53 (2002) 525–528.","chicago":"Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 525–28. <a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">https://doi.org/10.1016/s0167-9317(00)00370-1</a>."}},{"department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","date_created":"2023-01-25T09:08:36Z","publication":"Microelectronic Engineering","issue":"1-4","doi":"10.1016/s0167-9317(00)00299-9","language":[{"iso":"eng"}],"intvolume":"        53","publication_status":"published","date_updated":"2023-03-21T10:02:46Z","author":[{"first_name":"J.T.","last_name":"Horstmann","full_name":"Horstmann, J.T."},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"publication_identifier":{"issn":["0167-9317"]},"year":"2002","title":"1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique","citation":{"bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={213–216} }","ama":"Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. <i>Microelectronic Engineering</i>. 2002;53(1-4):213-216. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>","mla":"Horstmann, J. T., et al. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 213–16, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>.","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 53 (2002) 213–216.","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 213–16. <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">https://doi.org/10.1016/s0167-9317(00)00299-9</a>.","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 213–216, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>.","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 213–216. <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">https://doi.org/10.1016/s0167-9317(00)00299-9</a>"},"volume":53,"user_id":"20179","_id":"39879","publisher":"Elsevier BV","page":"213-216","status":"public"},{"citation":{"bibtex":"@article{Hilleringmann_Knospe_Heite_Schumacher_Goser_2002, title={A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits}, volume={15}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Knospe, K. and Heite, C. and Schumacher, K. and Goser, K.}, year={2002}, pages={289–292} }","short":"U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, K. Goser, Microelectronic Engineering 15 (2002) 289–292.","ama":"Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. <i>Microelectronic Engineering</i>. 2002;15(1-4):289-292. doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>","chicago":"Hilleringmann, Ulrich, K. Knospe, C. Heite, K. Schumacher, and K. Goser. “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits.” <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 289–92. <a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">https://doi.org/10.1016/0167-9317(91)90231-2</a>.","ieee":"U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, and K. Goser, “A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits,” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 289–292, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>.","mla":"Hilleringmann, Ulrich, et al. “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits.” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 289–92, doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>.","apa":"Hilleringmann, U., Knospe, K., Heite, C., Schumacher, K., &#38; Goser, K. (2002). A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 289–292. <a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">https://doi.org/10.1016/0167-9317(91)90231-2</a>"},"status":"public","page":"289-292","_id":"39919","publisher":"Elsevier BV","user_id":"20179","volume":15,"issue":"1-4","publication":"Microelectronic Engineering","date_created":"2023-01-25T09:29:32Z","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","department":[{"_id":"59"}],"year":"2002","title":"A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits","publication_identifier":{"issn":["0167-9317"]},"author":[{"id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"},{"first_name":"K.","last_name":"Knospe","full_name":"Knospe, K."},{"first_name":"C.","last_name":"Heite","full_name":"Heite, C."},{"first_name":"K.","last_name":"Schumacher","full_name":"Schumacher, K."},{"last_name":"Goser","first_name":"K.","full_name":"Goser, K."}],"publication_status":"published","date_updated":"2023-03-22T10:29:08Z","intvolume":"        15","language":[{"iso":"eng"}],"doi":"10.1016/0167-9317(91)90231-2"},{"citation":{"mla":"Soennecken, A., et al. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 633–36, doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>.","ama":"Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic Engineering</i>. 2002;15(1-4):633-636. doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>","bibtex":"@article{Soennecken_Hilleringmann_Goser_2002, title={Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica}, volume={15}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={633–636} }","apa":"Soennecken, A., Hilleringmann, U., &#38; Goser, K. (2002). Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 633–636. <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">https://doi.org/10.1016/0167-9317(91)90299-s</a>","ieee":"A. Soennecken, U. Hilleringmann, and K. Goser, “Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica,” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 633–636, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>.","short":"A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering 15 (2002) 633–636.","chicago":"Soennecken, A., Ulrich Hilleringmann, and K. Goser. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 633–36. <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">https://doi.org/10.1016/0167-9317(91)90299-s</a>."},"publisher":"Elsevier BV","_id":"39920","page":"633-636","volume":15,"user_id":"20179","status":"public","date_created":"2023-01-25T09:29:53Z","department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","issue":"1-4","publication":"Microelectronic Engineering","language":[{"iso":"eng"}],"doi":"10.1016/0167-9317(91)90299-s","publication_identifier":{"issn":["0167-9317"]},"author":[{"full_name":"Soennecken, A.","last_name":"Soennecken","first_name":"A."},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"year":"2002","title":"Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica","intvolume":"        15","publication_status":"published","date_updated":"2023-03-21T09:47:17Z"},{"date_created":"2023-01-25T09:27:51Z","type":"journal_article","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}],"issue":"1-4","publication":"Microelectronic Engineering","language":[{"iso":"eng"}],"doi":"10.1016/0167-9317(92)90425-q","year":"2002","title":"Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon","publication_identifier":{"issn":["0167-9317"]},"author":[{"id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann"},{"last_name":"Goser","first_name":"K.","full_name":"Goser, K."}],"publication_status":"published","date_updated":"2023-03-21T09:49:09Z","intvolume":"        19","citation":{"short":"U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.","chicago":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 211–14. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>.","apa":"Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 211–214. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>","ieee":"U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","ama":"Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>. 2002;19(1-4):211-214. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>","bibtex":"@article{Hilleringmann_Goser_2002, title={Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }","mla":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>."},"page":"211-214","publisher":"Elsevier BV","_id":"39915","user_id":"20179","volume":19,"status":"public"},{"issue":"1-4","publication":"Microelectronic Engineering","date_created":"2023-01-25T09:28:16Z","department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","publication_identifier":{"issn":["0167-9317"]},"author":[{"full_name":"Adams, S.","last_name":"Adams","first_name":"S."},{"full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann","id":"20179"},{"first_name":"K.","last_name":"Goser","full_name":"Goser, K."}],"title":"CMOS compatible micromachining by dry silicon-etching techniques","year":"2002","intvolume":"        19","date_updated":"2023-03-21T09:48:55Z","publication_status":"published","language":[{"iso":"eng"}],"doi":"10.1016/0167-9317(92)90420-v","citation":{"mla":"Adams, S., et al. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 191–94, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>.","ama":"Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching techniques. <i>Microelectronic Engineering</i>. 2002;19(1-4):191-194. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>","bibtex":"@article{Adams_Hilleringmann_Goser_2002, title={CMOS compatible micromachining by dry silicon-etching techniques}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Adams, S. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={191–194} }","apa":"Adams, S., Hilleringmann, U., &#38; Goser, K. (2002). CMOS compatible micromachining by dry silicon-etching techniques. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 191–194. <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">https://doi.org/10.1016/0167-9317(92)90420-v</a>","ieee":"S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining by dry silicon-etching techniques,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 191–194, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>.","short":"S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 191–194.","chicago":"Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 191–94. <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">https://doi.org/10.1016/0167-9317(92)90420-v</a>."},"status":"public","_id":"39916","publisher":"Elsevier BV","page":"191-194","volume":19,"user_id":"20179"},{"issue":"1-4","publication":"Microelectronic Engineering","date_created":"2023-01-25T09:13:17Z","department":[{"_id":"59"}],"type":"journal_article","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"author":[{"full_name":"Mankowski, V.","last_name":"Mankowski","first_name":"V."},{"id":"20179","last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich"},{"full_name":"Schumacher, K.","last_name":"Schumacher","first_name":"K."}],"publication_identifier":{"issn":["0167-9317"]},"year":"2002","title":"12 kV low current cascaded light triggered switch on one silicon chip","intvolume":"        46","date_updated":"2023-03-21T09:58:35Z","publication_status":"published","language":[{"iso":"eng"}],"doi":"10.1016/s0167-9317(99)00122-7","citation":{"chicago":"Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “12 KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i> 46, no. 1–4 (2002): 413–17. <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">https://doi.org/10.1016/s0167-9317(99)00122-7</a>.","short":"V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 46 (2002) 413–417.","apa":"Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). 12 kV low current cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>, <i>46</i>(1–4), 413–417. <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">https://doi.org/10.1016/s0167-9317(99)00122-7</a>","ieee":"V. Mankowski, U. Hilleringmann, and K. Schumacher, “12 kV low current cascaded light triggered switch on one silicon chip,” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, pp. 413–417, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>.","ama":"Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>. 2002;46(1-4):413-417. doi:<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>","bibtex":"@article{Mankowski_Hilleringmann_Schumacher_2002, title={12 kV low current cascaded light triggered switch on one silicon chip}, volume={46}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={413–417} }","mla":"Mankowski, V., et al. “12 KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, Elsevier BV, 2002, pp. 413–17, doi:<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>."},"status":"public","publisher":"Elsevier BV","_id":"39889","page":"413-417","volume":46,"user_id":"20179"},{"user_id":"20179","volume":53,"page":"569-572","publisher":"Elsevier BV","_id":"39877","status":"public","citation":{"bibtex":"@article{Hilleringmann_Vieregge_Horstmann_2002, title={A structure definition technique for 25 nm lines of silicon and related materials}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2002}, pages={569–572} }","ama":"Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>. 2002;53(1-4):569-572. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>","mla":"Hilleringmann, Ulrich, et al. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 569–72, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>.","chicago":"Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 569–72. <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">https://doi.org/10.1016/s0167-9317(00)00380-4</a>.","short":"U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering 53 (2002) 569–572.","ieee":"U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “A structure definition technique for 25 nm lines of silicon and related materials,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 569–572, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>.","apa":"Hilleringmann, U., Vieregge, T., &#38; Horstmann, J. T. (2002). A structure definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 569–572. <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">https://doi.org/10.1016/s0167-9317(00)00380-4</a>"},"doi":"10.1016/s0167-9317(00)00380-4","language":[{"iso":"eng"}],"date_updated":"2023-03-21T10:03:00Z","publication_status":"published","intvolume":"        53","year":"2002","title":"A structure definition technique for 25 nm lines of silicon and related materials","publication_identifier":{"issn":["0167-9317"]},"author":[{"full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann","id":"20179"},{"first_name":"T.","last_name":"Vieregge","full_name":"Vieregge, T."},{"full_name":"Horstmann, J.T.","last_name":"Horstmann","first_name":"J.T."}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","department":[{"_id":"59"}],"date_created":"2023-01-25T09:08:13Z","publication":"Microelectronic Engineering","issue":"1-4"}]