[{"publisher":"Elsevier BV","date_updated":"2022-01-06T07:03:26Z","author":[{"full_name":"Zolatanosha, Viktoryia","last_name":"Zolatanosha","first_name":"Viktoryia"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"}],"date_created":"2019-01-28T10:07:25Z","volume":180,"title":"Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures","doi":"10.1016/j.mee.2017.05.053","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"year":"2017","citation":{"apa":"Zolatanosha, V., &#38; Reuter, D. (2017). Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures. <i>Microelectronic Engineering</i>, <i>180</i>, 35–39. <a href=\"https://doi.org/10.1016/j.mee.2017.05.053\">https://doi.org/10.1016/j.mee.2017.05.053</a>","bibtex":"@article{Zolatanosha_Reuter_2017, title={Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures}, volume={180}, DOI={<a href=\"https://doi.org/10.1016/j.mee.2017.05.053\">10.1016/j.mee.2017.05.053</a>}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Zolatanosha, Viktoryia and Reuter, Dirk}, year={2017}, pages={35–39} }","short":"V. Zolatanosha, D. Reuter, Microelectronic Engineering 180 (2017) 35–39.","mla":"Zolatanosha, Viktoryia, and Dirk Reuter. “Robust Si 3 N 4 Masks for 100 Nm Selective Area Epitaxy of GaAs-Based Nanostructures.” <i>Microelectronic Engineering</i>, vol. 180, Elsevier BV, 2017, pp. 35–39, doi:<a href=\"https://doi.org/10.1016/j.mee.2017.05.053\">10.1016/j.mee.2017.05.053</a>.","ieee":"V. Zolatanosha and D. Reuter, “Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures,” <i>Microelectronic Engineering</i>, vol. 180, pp. 35–39, 2017.","chicago":"Zolatanosha, Viktoryia, and Dirk Reuter. “Robust Si 3 N 4 Masks for 100 Nm Selective Area Epitaxy of GaAs-Based Nanostructures.” <i>Microelectronic Engineering</i> 180 (2017): 35–39. <a href=\"https://doi.org/10.1016/j.mee.2017.05.053\">https://doi.org/10.1016/j.mee.2017.05.053</a>.","ama":"Zolatanosha V, Reuter D. Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures. <i>Microelectronic Engineering</i>. 2017;180:35-39. doi:<a href=\"https://doi.org/10.1016/j.mee.2017.05.053\">10.1016/j.mee.2017.05.053</a>"},"page":"35-39","intvolume":"       180","_id":"7026","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"language":[{"iso":"eng"}],"type":"journal_article","publication":"Microelectronic Engineering","status":"public"},{"citation":{"ieee":"T. Meyers, F. F. Vidor, K. Brassat, J. Lindner, and U. Hilleringmann, “Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics,” <i>Microelectronic Engineering</i>, vol. 174, pp. 35–39, 2016.","chicago":"Meyers, Thorsten, Fábio F. Vidor, Katharina Brassat, Jörg Lindner, and Ulrich Hilleringmann. “Low-Voltage DNTT-Based Thin-Film Transistors and Inverters for Flexible Electronics.” <i>Microelectronic Engineering</i> 174 (2016): 35–39. <a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">https://doi.org/10.1016/j.mee.2016.12.018</a>.","ama":"Meyers T, Vidor FF, Brassat K, Lindner J, Hilleringmann U. Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics. <i>Microelectronic Engineering</i>. 2016;174:35-39. doi:<a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>","apa":"Meyers, T., Vidor, F. F., Brassat, K., Lindner, J., &#38; Hilleringmann, U. (2016). Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics. <i>Microelectronic Engineering</i>, <i>174</i>, 35–39. <a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">https://doi.org/10.1016/j.mee.2016.12.018</a>","mla":"Meyers, Thorsten, et al. “Low-Voltage DNTT-Based Thin-Film Transistors and Inverters for Flexible Electronics.” <i>Microelectronic Engineering</i>, vol. 174, Elsevier BV, 2016, pp. 35–39, doi:<a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>.","bibtex":"@article{Meyers_Vidor_Brassat_Lindner_Hilleringmann_2016, title={Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics}, volume={174}, DOI={<a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Meyers, Thorsten and Vidor, Fábio F. and Brassat, Katharina and Lindner, Jörg and Hilleringmann, Ulrich}, year={2016}, pages={35–39} }","short":"T. Meyers, F.F. Vidor, K. Brassat, J. Lindner, U. Hilleringmann, Microelectronic Engineering 174 (2016) 35–39."},"intvolume":"       174","page":"35-39","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"has_accepted_license":"1","doi":"10.1016/j.mee.2016.12.018","author":[{"first_name":"Thorsten","last_name":"Meyers","full_name":"Meyers, Thorsten"},{"first_name":"Fábio F.","full_name":"Vidor, Fábio F.","last_name":"Vidor"},{"last_name":"Brassat","full_name":"Brassat, Katharina","id":"11305","first_name":"Katharina"},{"first_name":"Jörg","last_name":"Lindner","id":"20797","full_name":"Lindner, Jörg"},{"first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann"}],"volume":174,"date_updated":"2022-01-06T07:00:00Z","status":"public","type":"journal_article","file_date_updated":"2018-08-20T13:35:02Z","article_type":"original","user_id":"55706","department":[{"_id":"286"},{"_id":"15"}],"_id":"3956","year":"2016","title":"Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics","date_created":"2018-08-20T13:33:05Z","publisher":"Elsevier BV","file":[{"relation":"main_file","success":1,"content_type":"application/pdf","access_level":"closed","file_id":"3957","file_name":"Now-voltage DNTT-based thin-film transistors and inverters for flexible electronics.pdf","file_size":758984,"creator":"hclaudia","date_created":"2018-08-20T13:35:02Z","date_updated":"2018-08-20T13:35:02Z"}],"abstract":[{"lang":"eng","text":"In this article we present an integration technique for low-voltage DNTT-based TFTs for flexible electronic applications.\r\nTherefore, a high-k nanocomposite combining the flexibility of its polymericmatrix and the high permittivity\r\nof the incorporated inorganic material was used as gate dielectric layer. The influence of a conventional\r\nphotolithography process upon the dielectric layer is analyzed regarding electrical instabilities in the device characteristics.\r\nThe impact of an implemented sacrificial layer to reduce chemical stress to the insulating film during\r\nphotolithography is evaluated. Furthermore, first inverter circuits were integrated and electrically characterized.\r\nAdditionally, the implementation of this sacrificial layer can be used for future complementary circuit design."}],"publication":"Microelectronic Engineering","language":[{"iso":"eng"}],"ddc":["530"]},{"status":"public","type":"journal_article","publication":"Microelectronic Engineering","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"_id":"39447","user_id":"20179","department":[{"_id":"59"}],"year":"2016","citation":{"apa":"Meyers, T., Vidor, F. F., Brassat, K., Lindner, J. K. N., &#38; Hilleringmann, U. (2016). Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics. <i>Microelectronic Engineering</i>, <i>174</i>, 35–39. <a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">https://doi.org/10.1016/j.mee.2016.12.018</a>","short":"T. Meyers, F.F. Vidor, K. Brassat, J.K.N. Lindner, U. Hilleringmann, Microelectronic Engineering 174 (2016) 35–39.","mla":"Meyers, Thorsten, et al. “Low-Voltage DNTT-Based Thin-Film Transistors and Inverters for Flexible Electronics.” <i>Microelectronic Engineering</i>, vol. 174, Elsevier BV, 2016, pp. 35–39, doi:<a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>.","bibtex":"@article{Meyers_Vidor_Brassat_Lindner_Hilleringmann_2016, title={Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics}, volume={174}, DOI={<a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Meyers, Thorsten and Vidor, Fábio F. and Brassat, Katharina and Lindner, Jörg K.N. and Hilleringmann, Ulrich}, year={2016}, pages={35–39} }","ieee":"T. Meyers, F. F. Vidor, K. Brassat, J. K. N. Lindner, and U. Hilleringmann, “Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics,” <i>Microelectronic Engineering</i>, vol. 174, pp. 35–39, 2016, doi: <a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>.","chicago":"Meyers, Thorsten, Fábio F. Vidor, Katharina Brassat, Jörg K.N. Lindner, and Ulrich Hilleringmann. “Low-Voltage DNTT-Based Thin-Film Transistors and Inverters for Flexible Electronics.” <i>Microelectronic Engineering</i> 174 (2016): 35–39. <a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">https://doi.org/10.1016/j.mee.2016.12.018</a>.","ama":"Meyers T, Vidor FF, Brassat K, Lindner JKN, Hilleringmann U. Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics. <i>Microelectronic Engineering</i>. 2016;174:35-39. doi:<a href=\"https://doi.org/10.1016/j.mee.2016.12.018\">10.1016/j.mee.2016.12.018</a>"},"page":"35-39","intvolume":"       174","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"title":"Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics","doi":"10.1016/j.mee.2016.12.018","publisher":"Elsevier BV","date_updated":"2023-03-22T10:16:34Z","date_created":"2023-01-24T10:59:12Z","author":[{"first_name":"Thorsten","last_name":"Meyers","full_name":"Meyers, Thorsten"},{"last_name":"Vidor","full_name":"Vidor, Fábio F.","first_name":"Fábio F."},{"last_name":"Brassat","full_name":"Brassat, Katharina","first_name":"Katharina"},{"first_name":"Jörg K.N.","full_name":"Lindner, Jörg K.N.","last_name":"Lindner"},{"first_name":"Ulrich","id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann"}],"volume":174},{"doi":"10.1016/j.mee.2016.02.059","title":"ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating technique","volume":159,"author":[{"first_name":"Fábio F.","full_name":"Vidor, Fábio F.","last_name":"Vidor"},{"first_name":"Thorsten","last_name":"Meyers","full_name":"Meyers, Thorsten"},{"full_name":"Wirth, Gilson I.","last_name":"Wirth","first_name":"Gilson I."},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"}],"date_created":"2023-01-24T11:14:45Z","date_updated":"2023-03-22T10:22:16Z","publisher":"Elsevier BV","page":"155-158","intvolume":"       159","citation":{"apa":"Vidor, F. F., Meyers, T., Wirth, G. I., &#38; Hilleringmann, U. (2016). ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating technique. <i>Microelectronic Engineering</i>, <i>159</i>, 155–158. <a href=\"https://doi.org/10.1016/j.mee.2016.02.059\">https://doi.org/10.1016/j.mee.2016.02.059</a>","short":"F.F. Vidor, T. Meyers, G.I. Wirth, U. Hilleringmann, Microelectronic Engineering 159 (2016) 155–158.","bibtex":"@article{Vidor_Meyers_Wirth_Hilleringmann_2016, title={ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating technique}, volume={159}, DOI={<a href=\"https://doi.org/10.1016/j.mee.2016.02.059\">10.1016/j.mee.2016.02.059</a>}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Vidor, Fábio F. and Meyers, Thorsten and Wirth, Gilson I. and Hilleringmann, Ulrich}, year={2016}, pages={155–158} }","mla":"Vidor, Fábio F., et al. “ZnO Nanoparticle Thin-Film Transistors on Flexible Substrate Using Spray-Coating Technique.” <i>Microelectronic Engineering</i>, vol. 159, Elsevier BV, 2016, pp. 155–58, doi:<a href=\"https://doi.org/10.1016/j.mee.2016.02.059\">10.1016/j.mee.2016.02.059</a>.","ieee":"F. F. Vidor, T. Meyers, G. I. Wirth, and U. Hilleringmann, “ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating technique,” <i>Microelectronic Engineering</i>, vol. 159, pp. 155–158, 2016, doi: <a href=\"https://doi.org/10.1016/j.mee.2016.02.059\">10.1016/j.mee.2016.02.059</a>.","chicago":"Vidor, Fábio F., Thorsten Meyers, Gilson I. Wirth, and Ulrich Hilleringmann. “ZnO Nanoparticle Thin-Film Transistors on Flexible Substrate Using Spray-Coating Technique.” <i>Microelectronic Engineering</i> 159 (2016): 155–58. <a href=\"https://doi.org/10.1016/j.mee.2016.02.059\">https://doi.org/10.1016/j.mee.2016.02.059</a>.","ama":"Vidor FF, Meyers T, Wirth GI, Hilleringmann U. ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating technique. <i>Microelectronic Engineering</i>. 2016;159:155-158. doi:<a href=\"https://doi.org/10.1016/j.mee.2016.02.059\">10.1016/j.mee.2016.02.059</a>"},"year":"2016","publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}],"user_id":"20179","_id":"39466","status":"public","publication":"Microelectronic Engineering","type":"journal_article"},{"title":"Nanoimprint-induced effects on electrical and optical properties of quantum well structures","doi":"10.1016/s0167-9317(03)00074-1","date_updated":"2022-01-06T07:03:59Z","author":[{"first_name":"S.","last_name":"Zankovych","full_name":"Zankovych, S."},{"full_name":"Maximov, I.","last_name":"Maximov","first_name":"I."},{"first_name":"I.","last_name":"Shorubalko","full_name":"Shorubalko, I."},{"first_name":"J.","full_name":"Seekamp, J.","last_name":"Seekamp"},{"full_name":"Beck, M.","last_name":"Beck","first_name":"M."},{"first_name":"S.","full_name":"Romanov, S.","last_name":"Romanov"},{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"},{"first_name":"P.","full_name":"Schafmeister, P.","last_name":"Schafmeister"},{"full_name":"Wieck, A.D.","last_name":"Wieck","first_name":"A.D."},{"first_name":"J.","last_name":"Ahopelto","full_name":"Ahopelto, J."},{"full_name":"Sotomayor Torres, C.M.","last_name":"Sotomayor Torres","first_name":"C.M."},{"full_name":"Montelius, L.","last_name":"Montelius","first_name":"L."}],"date_created":"2019-03-28T15:05:35Z","year":"2003","citation":{"chicago":"Zankovych, S., I. Maximov, I. Shorubalko, J. Seekamp, M. Beck, S. Romanov, Dirk Reuter, et al. “Nanoimprint-Induced Effects on Electrical and Optical Properties of Quantum Well Structures.” <i>Microelectronic Engineering</i>, 2003, 214–20. <a href=\"https://doi.org/10.1016/s0167-9317(03)00074-1\">https://doi.org/10.1016/s0167-9317(03)00074-1</a>.","ieee":"S. Zankovych <i>et al.</i>, “Nanoimprint-induced effects on electrical and optical properties of quantum well structures,” <i>Microelectronic Engineering</i>, pp. 214–220, 2003.","ama":"Zankovych S, Maximov I, Shorubalko I, et al. Nanoimprint-induced effects on electrical and optical properties of quantum well structures. <i>Microelectronic Engineering</i>. 2003:214-220. doi:<a href=\"https://doi.org/10.1016/s0167-9317(03)00074-1\">10.1016/s0167-9317(03)00074-1</a>","apa":"Zankovych, S., Maximov, I., Shorubalko, I., Seekamp, J., Beck, M., Romanov, S., … Montelius, L. (2003). Nanoimprint-induced effects on electrical and optical properties of quantum well structures. <i>Microelectronic Engineering</i>, 214–220. <a href=\"https://doi.org/10.1016/s0167-9317(03)00074-1\">https://doi.org/10.1016/s0167-9317(03)00074-1</a>","short":"S. Zankovych, I. Maximov, I. Shorubalko, J. Seekamp, M. Beck, S. Romanov, D. Reuter, P. Schafmeister, A.D. Wieck, J. Ahopelto, C.M. Sotomayor Torres, L. 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(2003). Nanometer scale organic thin film transistors with Pentacene. <i>Microelectronic Engineering</i>, <i>67–68</i>, 845–852. <a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">https://doi.org/10.1016/s0167-9317(03)00146-1</a>","mla":"Pannemann, Ch., et al. “Nanometer Scale Organic Thin Film Transistors with Pentacene.” <i>Microelectronic Engineering</i>, vol. 67–68, Elsevier BV, 2003, pp. 845–52, doi:<a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>.","short":"Ch. Pannemann, T. Diekmann, U. Hilleringmann, Microelectronic Engineering 67–68 (2003) 845–852.","bibtex":"@article{Pannemann_Diekmann_Hilleringmann_2003, title={Nanometer scale organic thin film transistors with Pentacene}, volume={67–68}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}, year={2003}, pages={845–852} }","ama":"Pannemann Ch, Diekmann T, Hilleringmann U. Nanometer scale organic thin film transistors with Pentacene. <i>Microelectronic Engineering</i>. 2003;67-68:845-852. doi:<a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>","chicago":"Pannemann, Ch., T. Diekmann, and Ulrich Hilleringmann. “Nanometer Scale Organic Thin Film Transistors with Pentacene.” <i>Microelectronic Engineering</i> 67–68 (2003): 845–52. <a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">https://doi.org/10.1016/s0167-9317(03)00146-1</a>.","ieee":"Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “Nanometer scale organic thin film transistors with Pentacene,” <i>Microelectronic Engineering</i>, vol. 67–68, pp. 845–852, 2003, doi: <a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>."},"page":"845-852","year":"2003","publication_status":"published","publication_identifier":{"issn":["0167-9317"]}},{"date_updated":"2022-01-06T07:04:00Z","author":[{"last_name":"Kähler","full_name":"Kähler, D.","first_name":"D."},{"first_name":"U.","last_name":"Kunze","full_name":"Kunze, U."},{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"},{"last_name":"Wieck","full_name":"Wieck, A.D.","first_name":"A.D."}],"date_created":"2019-03-28T15:09:49Z","title":"Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures","doi":"10.1016/s0167-9317(02)00474-4","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"year":"2002","citation":{"ama":"Kähler D, Kunze U, Reuter D, Wieck AD. 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