---
_id: '7026'
author:
- first_name: Viktoryia
  full_name: Zolatanosha, Viktoryia
  last_name: Zolatanosha
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
citation:
  ama: Zolatanosha V, Reuter D. Robust Si 3 N 4 masks for 100 nm selective area epitaxy
    of GaAs-based nanostructures. <i>Microelectronic Engineering</i>. 2017;180:35-39.
    doi:<a href="https://doi.org/10.1016/j.mee.2017.05.053">10.1016/j.mee.2017.05.053</a>
  apa: Zolatanosha, V., &#38; Reuter, D. (2017). Robust Si 3 N 4 masks for 100 nm
    selective area epitaxy of GaAs-based nanostructures. <i>Microelectronic Engineering</i>,
    <i>180</i>, 35–39. <a href="https://doi.org/10.1016/j.mee.2017.05.053">https://doi.org/10.1016/j.mee.2017.05.053</a>
  bibtex: '@article{Zolatanosha_Reuter_2017, title={Robust Si 3 N 4 masks for 100
    nm selective area epitaxy of GaAs-based nanostructures}, volume={180}, DOI={<a
    href="https://doi.org/10.1016/j.mee.2017.05.053">10.1016/j.mee.2017.05.053</a>},
    journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Zolatanosha,
    Viktoryia and Reuter, Dirk}, year={2017}, pages={35–39} }'
  chicago: 'Zolatanosha, Viktoryia, and Dirk Reuter. “Robust Si 3 N 4 Masks for 100
    Nm Selective Area Epitaxy of GaAs-Based Nanostructures.” <i>Microelectronic Engineering</i>
    180 (2017): 35–39. <a href="https://doi.org/10.1016/j.mee.2017.05.053">https://doi.org/10.1016/j.mee.2017.05.053</a>.'
  ieee: V. Zolatanosha and D. Reuter, “Robust Si 3 N 4 masks for 100 nm selective
    area epitaxy of GaAs-based nanostructures,” <i>Microelectronic Engineering</i>,
    vol. 180, pp. 35–39, 2017.
  mla: Zolatanosha, Viktoryia, and Dirk Reuter. “Robust Si 3 N 4 Masks for 100 Nm
    Selective Area Epitaxy of GaAs-Based Nanostructures.” <i>Microelectronic Engineering</i>,
    vol. 180, Elsevier BV, 2017, pp. 35–39, doi:<a href="https://doi.org/10.1016/j.mee.2017.05.053">10.1016/j.mee.2017.05.053</a>.
  short: V. Zolatanosha, D. Reuter, Microelectronic Engineering 180 (2017) 35–39.
date_created: 2019-01-28T10:07:25Z
date_updated: 2022-01-06T07:03:26Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.mee.2017.05.053
intvolume: '       180'
language:
- iso: eng
page: 35-39
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures
type: journal_article
user_id: '42514'
volume: 180
year: '2017'
...
---
_id: '3956'
abstract:
- lang: eng
  text: "In this article we present an integration technique for low-voltage DNTT-based
    TFTs for flexible electronic applications.\r\nTherefore, a high-k nanocomposite
    combining the flexibility of its polymericmatrix and the high permittivity\r\nof
    the incorporated inorganic material was used as gate dielectric layer. The influence
    of a conventional\r\nphotolithography process upon the dielectric layer is analyzed
    regarding electrical instabilities in the device characteristics.\r\nThe impact
    of an implemented sacrificial layer to reduce chemical stress to the insulating
    film during\r\nphotolithography is evaluated. Furthermore, first inverter circuits
    were integrated and electrically characterized.\r\nAdditionally, the implementation
    of this sacrificial layer can be used for future complementary circuit design."
article_type: original
author:
- first_name: Thorsten
  full_name: Meyers, Thorsten
  last_name: Meyers
- first_name: Fábio F.
  full_name: Vidor, Fábio F.
  last_name: Vidor
- first_name: Katharina
  full_name: Brassat, Katharina
  id: '11305'
  last_name: Brassat
- first_name: Jörg
  full_name: Lindner, Jörg
  id: '20797'
  last_name: Lindner
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  last_name: Hilleringmann
citation:
  ama: Meyers T, Vidor FF, Brassat K, Lindner J, Hilleringmann U. Low-voltage DNTT-based
    thin-film transistors and inverters for flexible electronics. <i>Microelectronic
    Engineering</i>. 2016;174:35-39. doi:<a href="https://doi.org/10.1016/j.mee.2016.12.018">10.1016/j.mee.2016.12.018</a>
  apa: Meyers, T., Vidor, F. F., Brassat, K., Lindner, J., &#38; Hilleringmann, U.
    (2016). Low-voltage DNTT-based thin-film transistors and inverters for flexible
    electronics. <i>Microelectronic Engineering</i>, <i>174</i>, 35–39. <a href="https://doi.org/10.1016/j.mee.2016.12.018">https://doi.org/10.1016/j.mee.2016.12.018</a>
  bibtex: '@article{Meyers_Vidor_Brassat_Lindner_Hilleringmann_2016, title={Low-voltage
    DNTT-based thin-film transistors and inverters for flexible electronics}, volume={174},
    DOI={<a href="https://doi.org/10.1016/j.mee.2016.12.018">10.1016/j.mee.2016.12.018</a>},
    journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Meyers,
    Thorsten and Vidor, Fábio F. and Brassat, Katharina and Lindner, Jörg and Hilleringmann,
    Ulrich}, year={2016}, pages={35–39} }'
  chicago: 'Meyers, Thorsten, Fábio F. Vidor, Katharina Brassat, Jörg Lindner, and
    Ulrich Hilleringmann. “Low-Voltage DNTT-Based Thin-Film Transistors and Inverters
    for Flexible Electronics.” <i>Microelectronic Engineering</i> 174 (2016): 35–39.
    <a href="https://doi.org/10.1016/j.mee.2016.12.018">https://doi.org/10.1016/j.mee.2016.12.018</a>.'
  ieee: T. Meyers, F. F. Vidor, K. Brassat, J. Lindner, and U. Hilleringmann, “Low-voltage
    DNTT-based thin-film transistors and inverters for flexible electronics,” <i>Microelectronic
    Engineering</i>, vol. 174, pp. 35–39, 2016.
  mla: Meyers, Thorsten, et al. “Low-Voltage DNTT-Based Thin-Film Transistors and
    Inverters for Flexible Electronics.” <i>Microelectronic Engineering</i>, vol.
    174, Elsevier BV, 2016, pp. 35–39, doi:<a href="https://doi.org/10.1016/j.mee.2016.12.018">10.1016/j.mee.2016.12.018</a>.
  short: T. Meyers, F.F. Vidor, K. Brassat, J. Lindner, U. Hilleringmann, Microelectronic
    Engineering 174 (2016) 35–39.
date_created: 2018-08-20T13:33:05Z
date_updated: 2022-01-06T07:00:00Z
ddc:
- '530'
department:
- _id: '286'
- _id: '15'
doi: 10.1016/j.mee.2016.12.018
file:
- access_level: closed
  content_type: application/pdf
  creator: hclaudia
  date_created: 2018-08-20T13:35:02Z
  date_updated: 2018-08-20T13:35:02Z
  file_id: '3957'
  file_name: Now-voltage DNTT-based thin-film transistors and inverters for flexible
    electronics.pdf
  file_size: 758984
  relation: main_file
  success: 1
file_date_updated: 2018-08-20T13:35:02Z
has_accepted_license: '1'
intvolume: '       174'
language:
- iso: eng
page: 35-39
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics
type: journal_article
user_id: '55706'
volume: 174
year: '2016'
...
---
_id: '39447'
author:
- first_name: Thorsten
  full_name: Meyers, Thorsten
  last_name: Meyers
- first_name: Fábio F.
  full_name: Vidor, Fábio F.
  last_name: Vidor
- first_name: Katharina
  full_name: Brassat, Katharina
  last_name: Brassat
- first_name: Jörg K.N.
  full_name: Lindner, Jörg K.N.
  last_name: Lindner
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: Meyers T, Vidor FF, Brassat K, Lindner JKN, Hilleringmann U. Low-voltage DNTT-based
    thin-film transistors and inverters for flexible electronics. <i>Microelectronic
    Engineering</i>. 2016;174:35-39. doi:<a href="https://doi.org/10.1016/j.mee.2016.12.018">10.1016/j.mee.2016.12.018</a>
  apa: Meyers, T., Vidor, F. F., Brassat, K., Lindner, J. K. N., &#38; Hilleringmann,
    U. (2016). Low-voltage DNTT-based thin-film transistors and inverters for flexible
    electronics. <i>Microelectronic Engineering</i>, <i>174</i>, 35–39. <a href="https://doi.org/10.1016/j.mee.2016.12.018">https://doi.org/10.1016/j.mee.2016.12.018</a>
  bibtex: '@article{Meyers_Vidor_Brassat_Lindner_Hilleringmann_2016, title={Low-voltage
    DNTT-based thin-film transistors and inverters for flexible electronics}, volume={174},
    DOI={<a href="https://doi.org/10.1016/j.mee.2016.12.018">10.1016/j.mee.2016.12.018</a>},
    journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Meyers,
    Thorsten and Vidor, Fábio F. and Brassat, Katharina and Lindner, Jörg K.N. and
    Hilleringmann, Ulrich}, year={2016}, pages={35–39} }'
  chicago: 'Meyers, Thorsten, Fábio F. Vidor, Katharina Brassat, Jörg K.N. Lindner,
    and Ulrich Hilleringmann. “Low-Voltage DNTT-Based Thin-Film Transistors and Inverters
    for Flexible Electronics.” <i>Microelectronic Engineering</i> 174 (2016): 35–39.
    <a href="https://doi.org/10.1016/j.mee.2016.12.018">https://doi.org/10.1016/j.mee.2016.12.018</a>.'
  ieee: 'T. Meyers, F. F. Vidor, K. Brassat, J. K. N. Lindner, and U. Hilleringmann,
    “Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics,”
    <i>Microelectronic Engineering</i>, vol. 174, pp. 35–39, 2016, doi: <a href="https://doi.org/10.1016/j.mee.2016.12.018">10.1016/j.mee.2016.12.018</a>.'
  mla: Meyers, Thorsten, et al. “Low-Voltage DNTT-Based Thin-Film Transistors and
    Inverters for Flexible Electronics.” <i>Microelectronic Engineering</i>, vol.
    174, Elsevier BV, 2016, pp. 35–39, doi:<a href="https://doi.org/10.1016/j.mee.2016.12.018">10.1016/j.mee.2016.12.018</a>.
  short: T. Meyers, F.F. Vidor, K. Brassat, J.K.N. Lindner, U. Hilleringmann, Microelectronic
    Engineering 174 (2016) 35–39.
date_created: 2023-01-24T10:59:12Z
date_updated: 2023-03-22T10:16:34Z
department:
- _id: '59'
doi: 10.1016/j.mee.2016.12.018
intvolume: '       174'
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 35-39
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics
type: journal_article
user_id: '20179'
volume: 174
year: '2016'
...
---
_id: '39466'
author:
- first_name: Fábio F.
  full_name: Vidor, Fábio F.
  last_name: Vidor
- first_name: Thorsten
  full_name: Meyers, Thorsten
  last_name: Meyers
- first_name: Gilson I.
  full_name: Wirth, Gilson I.
  last_name: Wirth
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: Vidor FF, Meyers T, Wirth GI, Hilleringmann U. ZnO nanoparticle thin-film transistors
    on flexible substrate using spray-coating technique. <i>Microelectronic Engineering</i>.
    2016;159:155-158. doi:<a href="https://doi.org/10.1016/j.mee.2016.02.059">10.1016/j.mee.2016.02.059</a>
  apa: Vidor, F. F., Meyers, T., Wirth, G. I., &#38; Hilleringmann, U. (2016). ZnO
    nanoparticle thin-film transistors on flexible substrate using spray-coating technique.
    <i>Microelectronic Engineering</i>, <i>159</i>, 155–158. <a href="https://doi.org/10.1016/j.mee.2016.02.059">https://doi.org/10.1016/j.mee.2016.02.059</a>
  bibtex: '@article{Vidor_Meyers_Wirth_Hilleringmann_2016, title={ZnO nanoparticle
    thin-film transistors on flexible substrate using spray-coating technique}, volume={159},
    DOI={<a href="https://doi.org/10.1016/j.mee.2016.02.059">10.1016/j.mee.2016.02.059</a>},
    journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Vidor,
    Fábio F. and Meyers, Thorsten and Wirth, Gilson I. and Hilleringmann, Ulrich},
    year={2016}, pages={155–158} }'
  chicago: 'Vidor, Fábio F., Thorsten Meyers, Gilson I. Wirth, and Ulrich Hilleringmann.
    “ZnO Nanoparticle Thin-Film Transistors on Flexible Substrate Using Spray-Coating
    Technique.” <i>Microelectronic Engineering</i> 159 (2016): 155–58. <a href="https://doi.org/10.1016/j.mee.2016.02.059">https://doi.org/10.1016/j.mee.2016.02.059</a>.'
  ieee: 'F. F. Vidor, T. Meyers, G. I. Wirth, and U. Hilleringmann, “ZnO nanoparticle
    thin-film transistors on flexible substrate using spray-coating technique,” <i>Microelectronic
    Engineering</i>, vol. 159, pp. 155–158, 2016, doi: <a href="https://doi.org/10.1016/j.mee.2016.02.059">10.1016/j.mee.2016.02.059</a>.'
  mla: Vidor, Fábio F., et al. “ZnO Nanoparticle Thin-Film Transistors on Flexible
    Substrate Using Spray-Coating Technique.” <i>Microelectronic Engineering</i>,
    vol. 159, Elsevier BV, 2016, pp. 155–58, doi:<a href="https://doi.org/10.1016/j.mee.2016.02.059">10.1016/j.mee.2016.02.059</a>.
  short: F.F. Vidor, T. Meyers, G.I. Wirth, U. Hilleringmann, Microelectronic Engineering
    159 (2016) 155–158.
date_created: 2023-01-24T11:14:45Z
date_updated: 2023-03-22T10:22:16Z
department:
- _id: '59'
doi: 10.1016/j.mee.2016.02.059
intvolume: '       159'
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 155-158
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating
  technique
type: journal_article
user_id: '20179'
volume: 159
year: '2016'
...
---
_id: '8728'
author:
- first_name: S.
  full_name: Zankovych, S.
  last_name: Zankovych
- first_name: I.
  full_name: Maximov, I.
  last_name: Maximov
- first_name: I.
  full_name: Shorubalko, I.
  last_name: Shorubalko
- first_name: J.
  full_name: Seekamp, J.
  last_name: Seekamp
- first_name: M.
  full_name: Beck, M.
  last_name: Beck
- first_name: S.
  full_name: Romanov, S.
  last_name: Romanov
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: P.
  full_name: Schafmeister, P.
  last_name: Schafmeister
- first_name: A.D.
  full_name: Wieck, A.D.
  last_name: Wieck
- first_name: J.
  full_name: Ahopelto, J.
  last_name: Ahopelto
- first_name: C.M.
  full_name: Sotomayor Torres, C.M.
  last_name: Sotomayor Torres
- first_name: L.
  full_name: Montelius, L.
  last_name: Montelius
citation:
  ama: Zankovych S, Maximov I, Shorubalko I, et al. Nanoimprint-induced effects on
    electrical and optical properties of quantum well structures. <i>Microelectronic
    Engineering</i>. 2003:214-220. doi:<a href="https://doi.org/10.1016/s0167-9317(03)00074-1">10.1016/s0167-9317(03)00074-1</a>
  apa: Zankovych, S., Maximov, I., Shorubalko, I., Seekamp, J., Beck, M., Romanov,
    S., … Montelius, L. (2003). Nanoimprint-induced effects on electrical and optical
    properties of quantum well structures. <i>Microelectronic Engineering</i>, 214–220.
    <a href="https://doi.org/10.1016/s0167-9317(03)00074-1">https://doi.org/10.1016/s0167-9317(03)00074-1</a>
  bibtex: '@article{Zankovych_Maximov_Shorubalko_Seekamp_Beck_Romanov_Reuter_Schafmeister_Wieck_Ahopelto_et
    al._2003, title={Nanoimprint-induced effects on electrical and optical properties
    of quantum well structures}, DOI={<a href="https://doi.org/10.1016/s0167-9317(03)00074-1">10.1016/s0167-9317(03)00074-1</a>},
    journal={Microelectronic Engineering}, author={Zankovych, S. and Maximov, I. and
    Shorubalko, I. and Seekamp, J. and Beck, M. and Romanov, S. and Reuter, Dirk and
    Schafmeister, P. and Wieck, A.D. and Ahopelto, J. and et al.}, year={2003}, pages={214–220}
    }'
  chicago: Zankovych, S., I. Maximov, I. Shorubalko, J. Seekamp, M. Beck, S. Romanov,
    Dirk Reuter, et al. “Nanoimprint-Induced Effects on Electrical and Optical Properties
    of Quantum Well Structures.” <i>Microelectronic Engineering</i>, 2003, 214–20.
    <a href="https://doi.org/10.1016/s0167-9317(03)00074-1">https://doi.org/10.1016/s0167-9317(03)00074-1</a>.
  ieee: S. Zankovych <i>et al.</i>, “Nanoimprint-induced effects on electrical and
    optical properties of quantum well structures,” <i>Microelectronic Engineering</i>,
    pp. 214–220, 2003.
  mla: Zankovych, S., et al. “Nanoimprint-Induced Effects on Electrical and Optical
    Properties of Quantum Well Structures.” <i>Microelectronic Engineering</i>, 2003,
    pp. 214–20, doi:<a href="https://doi.org/10.1016/s0167-9317(03)00074-1">10.1016/s0167-9317(03)00074-1</a>.
  short: S. Zankovych, I. Maximov, I. Shorubalko, J. Seekamp, M. Beck, S. Romanov,
    D. Reuter, P. Schafmeister, A.D. Wieck, J. Ahopelto, C.M. Sotomayor Torres, L.
    Montelius, Microelectronic Engineering (2003) 214–220.
date_created: 2019-03-28T15:05:35Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/s0167-9317(03)00074-1
language:
- iso: eng
page: 214-220
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
status: public
title: Nanoimprint-induced effects on electrical and optical properties of quantum
  well structures
type: journal_article
user_id: '42514'
year: '2003'
...
---
_id: '39851'
author:
- first_name: Ch.
  full_name: Pannemann, Ch.
  last_name: Pannemann
- first_name: T.
  full_name: Diekmann, T.
  last_name: Diekmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: Pannemann Ch, Diekmann T, Hilleringmann U. Nanometer scale organic thin film
    transistors with Pentacene. <i>Microelectronic Engineering</i>. 2003;67-68:845-852.
    doi:<a href="https://doi.org/10.1016/s0167-9317(03)00146-1">10.1016/s0167-9317(03)00146-1</a>
  apa: Pannemann, Ch., Diekmann, T., &#38; Hilleringmann, U. (2003). Nanometer scale
    organic thin film transistors with Pentacene. <i>Microelectronic Engineering</i>,
    <i>67–68</i>, 845–852. <a href="https://doi.org/10.1016/s0167-9317(03)00146-1">https://doi.org/10.1016/s0167-9317(03)00146-1</a>
  bibtex: '@article{Pannemann_Diekmann_Hilleringmann_2003, title={Nanometer scale
    organic thin film transistors with Pentacene}, volume={67–68}, DOI={<a href="https://doi.org/10.1016/s0167-9317(03)00146-1">10.1016/s0167-9317(03)00146-1</a>},
    journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Pannemann,
    Ch. and Diekmann, T. and Hilleringmann, Ulrich}, year={2003}, pages={845–852}
    }'
  chicago: 'Pannemann, Ch., T. Diekmann, and Ulrich Hilleringmann. “Nanometer Scale
    Organic Thin Film Transistors with Pentacene.” <i>Microelectronic Engineering</i>
    67–68 (2003): 845–52. <a href="https://doi.org/10.1016/s0167-9317(03)00146-1">https://doi.org/10.1016/s0167-9317(03)00146-1</a>.'
  ieee: 'Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “Nanometer scale organic
    thin film transistors with Pentacene,” <i>Microelectronic Engineering</i>, vol.
    67–68, pp. 845–852, 2003, doi: <a href="https://doi.org/10.1016/s0167-9317(03)00146-1">10.1016/s0167-9317(03)00146-1</a>.'
  mla: Pannemann, Ch., et al. “Nanometer Scale Organic Thin Film Transistors with
    Pentacene.” <i>Microelectronic Engineering</i>, vol. 67–68, Elsevier BV, 2003,
    pp. 845–52, doi:<a href="https://doi.org/10.1016/s0167-9317(03)00146-1">10.1016/s0167-9317(03)00146-1</a>.
  short: Ch. Pannemann, T. Diekmann, U. Hilleringmann, Microelectronic Engineering
    67–68 (2003) 845–852.
date_created: 2023-01-25T08:39:40Z
date_updated: 2023-03-21T10:04:43Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(03)00146-1
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 845-852
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Nanometer scale organic thin film transistors with Pentacene
type: journal_article
user_id: '20179'
volume: 67-68
year: '2003'
...
---
_id: '8733'
author:
- first_name: D.
  full_name: Kähler, D.
  last_name: Kähler
- first_name: U.
  full_name: Kunze, U.
  last_name: Kunze
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A.D.
  full_name: Wieck, A.D.
  last_name: Wieck
citation:
  ama: Kähler D, Kunze U, Reuter D, Wieck AD. Quantum wire fabrication from compensating-layer
    GaAs–AlGaAs heterostructures. <i>Microelectronic Engineering</i>. 2002:619-623.
    doi:<a href="https://doi.org/10.1016/s0167-9317(02)00474-4">10.1016/s0167-9317(02)00474-4</a>
  apa: Kähler, D., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2002). Quantum wire
    fabrication from compensating-layer GaAs–AlGaAs heterostructures. <i>Microelectronic
    Engineering</i>, 619–623. <a href="https://doi.org/10.1016/s0167-9317(02)00474-4">https://doi.org/10.1016/s0167-9317(02)00474-4</a>
  bibtex: '@article{Kähler_Kunze_Reuter_Wieck_2002, title={Quantum wire fabrication
    from compensating-layer GaAs–AlGaAs heterostructures}, DOI={<a href="https://doi.org/10.1016/s0167-9317(02)00474-4">10.1016/s0167-9317(02)00474-4</a>},
    journal={Microelectronic Engineering}, author={Kähler, D. and Kunze, U. and Reuter,
    Dirk and Wieck, A.D.}, year={2002}, pages={619–623} }'
  chicago: Kähler, D., U. Kunze, Dirk Reuter, and A.D. Wieck. “Quantum Wire Fabrication
    from Compensating-Layer GaAs–AlGaAs Heterostructures.” <i>Microelectronic Engineering</i>,
    2002, 619–23. <a href="https://doi.org/10.1016/s0167-9317(02)00474-4">https://doi.org/10.1016/s0167-9317(02)00474-4</a>.
  ieee: D. Kähler, U. Kunze, D. Reuter, and A. D. Wieck, “Quantum wire fabrication
    from compensating-layer GaAs–AlGaAs heterostructures,” <i>Microelectronic Engineering</i>,
    pp. 619–623, 2002.
  mla: Kähler, D., et al. “Quantum Wire Fabrication from Compensating-Layer GaAs–AlGaAs
    Heterostructures.” <i>Microelectronic Engineering</i>, 2002, pp. 619–23, doi:<a
    href="https://doi.org/10.1016/s0167-9317(02)00474-4">10.1016/s0167-9317(02)00474-4</a>.
  short: D. Kähler, U. Kunze, D. Reuter, A.D. Wieck, Microelectronic Engineering (2002)
    619–623.
date_created: 2019-03-28T15:09:49Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/s0167-9317(02)00474-4
language:
- iso: eng
page: 619-623
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
status: public
title: Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '39912'
author:
- first_name: I.
  full_name: Schönstein, I.
  last_name: Schönstein
- first_name: J.
  full_name: Müller, J.
  last_name: Müller
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron
    NMOS devices due to visible light emission. <i>Microelectronic Engineering</i>.
    2002;21(1-4):363-366. doi:<a href="https://doi.org/10.1016/0167-9317(93)90092-j">10.1016/0167-9317(93)90092-j</a>
  apa: Schönstein, I., Müller, J., Hilleringmann, U., &#38; Goser, K. (2002). Characterization
    of submicron NMOS devices due to visible light emission. <i>Microelectronic Engineering</i>,
    <i>21</i>(1–4), 363–366. <a href="https://doi.org/10.1016/0167-9317(93)90092-j">https://doi.org/10.1016/0167-9317(93)90092-j</a>
  bibtex: '@article{Schönstein_Müller_Hilleringmann_Goser_2002, title={Characterization
    of submicron NMOS devices due to visible light emission}, volume={21}, DOI={<a
    href="https://doi.org/10.1016/0167-9317(93)90092-j">10.1016/0167-9317(93)90092-j</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Schönstein, I. and Müller, J. and Hilleringmann, Ulrich and Goser, K.},
    year={2002}, pages={363–366} }'
  chicago: 'Schönstein, I., J. Müller, Ulrich Hilleringmann, and K. Goser. “Characterization
    of Submicron NMOS Devices Due to Visible Light Emission.” <i>Microelectronic Engineering</i>
    21, no. 1–4 (2002): 363–66. <a href="https://doi.org/10.1016/0167-9317(93)90092-j">https://doi.org/10.1016/0167-9317(93)90092-j</a>.'
  ieee: 'I. Schönstein, J. Müller, U. Hilleringmann, and K. Goser, “Characterization
    of submicron NMOS devices due to visible light emission,” <i>Microelectronic Engineering</i>,
    vol. 21, no. 1–4, pp. 363–366, 2002, doi: <a href="https://doi.org/10.1016/0167-9317(93)90092-j">10.1016/0167-9317(93)90092-j</a>.'
  mla: Schönstein, I., et al. “Characterization of Submicron NMOS Devices Due to Visible
    Light Emission.” <i>Microelectronic Engineering</i>, vol. 21, no. 1–4, Elsevier
    BV, 2002, pp. 363–66, doi:<a href="https://doi.org/10.1016/0167-9317(93)90092-j">10.1016/0167-9317(93)90092-j</a>.
  short: I. Schönstein, J. Müller, U. Hilleringmann, K. Goser, Microelectronic Engineering
    21 (2002) 363–366.
date_created: 2023-01-25T09:26:21Z
date_updated: 2023-03-21T09:50:03Z
department:
- _id: '59'
doi: 10.1016/0167-9317(93)90092-j
intvolume: '        21'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 363-366
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Characterization of submicron NMOS devices due to visible light emission
type: journal_article
user_id: '20179'
volume: 21
year: '2002'
...
---
_id: '39914'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides,
    photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>.
    2002;19(1-4):211-214. doi:<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>
  apa: Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration
    of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic
    Engineering</i>, <i>19</i>(1–4), 211–214. <a href="https://doi.org/10.1016/0167-9317(92)90425-q">https://doi.org/10.1016/0167-9317(92)90425-q</a>
  bibtex: '@article{Hilleringmann_Goser_2002, title={Results of monolithic integration
    of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19},
    DOI={<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }'
  chicago: 'Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration
    of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic
    Engineering</i> 19, no. 1–4 (2002): 211–14. <a href="https://doi.org/10.1016/0167-9317(92)90425-q">https://doi.org/10.1016/0167-9317(92)90425-q</a>.'
  ieee: 'U. Hilleringmann and K. Goser, “Results of monolithic integration of optical
    waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>,
    vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>.'
  mla: Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of
    Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic
    Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>.
  short: U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.
date_created: 2023-01-25T09:27:23Z
date_updated: 2023-03-21T09:49:25Z
department:
- _id: '59'
doi: 10.1016/0167-9317(92)90425-q
intvolume: '        19'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 211-214
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Results of monolithic integration of optical waveguides, photodiodes and CMOS
  circuits on silicon
type: journal_article
user_id: '20179'
volume: 19
year: '2002'
...
---
_id: '39899'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors
    processed by optical lithography and a sidewall-etchback technique. <i>Microelectronic
    Engineering</i>. 2002;30(1-4):431-434. doi:<a href="https://doi.org/10.1016/0167-9317(95)00280-4">10.1016/0167-9317(95)00280-4</a>
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). Characterisation
    of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback
    technique. <i>Microelectronic Engineering</i>, <i>30</i>(1–4), 431–434. <a href="https://doi.org/10.1016/0167-9317(95)00280-4">https://doi.org/10.1016/0167-9317(95)00280-4</a>
  bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Characterisation of
    sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback
    technique}, volume={30}, DOI={<a href="https://doi.org/10.1016/0167-9317(95)00280-4">10.1016/0167-9317(95)00280-4</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002},
    pages={431–434} }'
  chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Characterisation
    of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback
    Technique.” <i>Microelectronic Engineering</i> 30, no. 1–4 (2002): 431–34. <a
    href="https://doi.org/10.1016/0167-9317(95)00280-4">https://doi.org/10.1016/0167-9317(95)00280-4</a>.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “Characterisation of sub-100
    nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique,”
    <i>Microelectronic Engineering</i>, vol. 30, no. 1–4, pp. 431–434, 2002, doi:
    <a href="https://doi.org/10.1016/0167-9317(95)00280-4">10.1016/0167-9317(95)00280-4</a>.'
  mla: Horstmann, J. T., et al. “Characterisation of Sub-100 Nm-MOS-Transistors Processed
    by Optical Lithography and a Sidewall-Etchback Technique.” <i>Microelectronic
    Engineering</i>, vol. 30, no. 1–4, Elsevier BV, 2002, pp. 431–34, doi:<a href="https://doi.org/10.1016/0167-9317(95)00280-4">10.1016/0167-9317(95)00280-4</a>.
  short: J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 30
    (2002) 431–434.
date_created: 2023-01-25T09:20:20Z
date_updated: 2023-03-21T09:53:55Z
department:
- _id: '59'
doi: 10.1016/0167-9317(95)00280-4
intvolume: '        30'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 431-434
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Characterisation of sub-100 nm-MOS-transistors processed by optical lithography
  and a sidewall-etchback technique
type: journal_article
user_id: '20179'
volume: 30
year: '2002'
...
---
_id: '39882'
author:
- first_name: V.
  full_name: Mankowski, V.
  last_name: Mankowski
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for
    smart power switching devices and very high voltage ICs above 10 kV. <i>Microelectronic
    Engineering</i>. 2002;53(1-4):525-528. doi:<a href="https://doi.org/10.1016/s0167-9317(00)00370-1">10.1016/s0167-9317(00)00370-1</a>
  apa: Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). A novel insulation
    technique for smart power switching devices and very high voltage ICs above 10
    kV. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 525–528. <a href="https://doi.org/10.1016/s0167-9317(00)00370-1">https://doi.org/10.1016/s0167-9317(00)00370-1</a>
  bibtex: '@article{Mankowski_Hilleringmann_Schumacher_2002, title={A novel insulation
    technique for smart power switching devices and very high voltage ICs above 10
    kV}, volume={53}, DOI={<a href="https://doi.org/10.1016/s0167-9317(00)00370-1">10.1016/s0167-9317(00)00370-1</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002},
    pages={525–528} }'
  chicago: 'Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “A Novel Insulation
    Technique for Smart Power Switching Devices and Very High Voltage ICs above 10
    KV.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 525–28. <a href="https://doi.org/10.1016/s0167-9317(00)00370-1">https://doi.org/10.1016/s0167-9317(00)00370-1</a>.'
  ieee: 'V. Mankowski, U. Hilleringmann, and K. Schumacher, “A novel insulation technique
    for smart power switching devices and very high voltage ICs above 10 kV,” <i>Microelectronic
    Engineering</i>, vol. 53, no. 1–4, pp. 525–528, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(00)00370-1">10.1016/s0167-9317(00)00370-1</a>.'
  mla: Mankowski, V., et al. “A Novel Insulation Technique for Smart Power Switching
    Devices and Very High Voltage ICs above 10 KV.” <i>Microelectronic Engineering</i>,
    vol. 53, no. 1–4, Elsevier BV, 2002, pp. 525–28, doi:<a href="https://doi.org/10.1016/s0167-9317(00)00370-1">10.1016/s0167-9317(00)00370-1</a>.
  short: V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering
    53 (2002) 525–528.
date_created: 2023-01-25T09:10:13Z
date_updated: 2023-03-21T10:00:06Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(00)00370-1
intvolume: '        53'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 525-528
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: A novel insulation technique for smart power switching devices and very high
  voltage ICs above 10 kV
type: journal_article
user_id: '20179'
volume: 53
year: '2002'
...
---
_id: '39879'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors
    fabricated by a special deposition and etchback technique. <i>Microelectronic
    Engineering</i>. 2002;53(1-4):213-216. doi:<a href="https://doi.org/10.1016/s0167-9317(00)00299-9">10.1016/s0167-9317(00)00299-9</a>
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). 1/f-Noise of sub-100
    nm-MOS-transistors fabricated by a special deposition and etchback technique.
    <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 213–216. <a href="https://doi.org/10.1016/s0167-9317(00)00299-9">https://doi.org/10.1016/s0167-9317(00)00299-9</a>
  bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={1/f-Noise of sub-100
    nm-MOS-transistors fabricated by a special deposition and etchback technique},
    volume={53}, DOI={<a href="https://doi.org/10.1016/s0167-9317(00)00299-9">10.1016/s0167-9317(00)00299-9</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002},
    pages={213–216} }'
  chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “1/f-Noise of Sub-100
    Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.”
    <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 213–16. <a href="https://doi.org/10.1016/s0167-9317(00)00299-9">https://doi.org/10.1016/s0167-9317(00)00299-9</a>.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “1/f-Noise of sub-100 nm-MOS-transistors
    fabricated by a special deposition and etchback technique,” <i>Microelectronic
    Engineering</i>, vol. 53, no. 1–4, pp. 213–216, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(00)00299-9">10.1016/s0167-9317(00)00299-9</a>.'
  mla: Horstmann, J. T., et al. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated
    by a Special Deposition and Etchback Technique.” <i>Microelectronic Engineering</i>,
    vol. 53, no. 1–4, Elsevier BV, 2002, pp. 213–16, doi:<a href="https://doi.org/10.1016/s0167-9317(00)00299-9">10.1016/s0167-9317(00)00299-9</a>.
  short: J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 53
    (2002) 213–216.
date_created: 2023-01-25T09:08:36Z
date_updated: 2023-03-21T10:02:46Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(00)00299-9
intvolume: '        53'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 213-216
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition
  and etchback technique
type: journal_article
user_id: '20179'
volume: 53
year: '2002'
...
---
_id: '39919'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Knospe, K.
  last_name: Knospe
- first_name: C.
  full_name: Heite, C.
  last_name: Heite
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based
    technology for monolithic integration of waveguides and VLSI CMOS circuits. <i>Microelectronic
    Engineering</i>. 2002;15(1-4):289-292. doi:<a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>
  apa: Hilleringmann, U., Knospe, K., Heite, C., Schumacher, K., &#38; Goser, K. (2002).
    A silicon based technology for monolithic integration of waveguides and VLSI CMOS
    circuits. <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 289–292. <a href="https://doi.org/10.1016/0167-9317(91)90231-2">https://doi.org/10.1016/0167-9317(91)90231-2</a>
  bibtex: '@article{Hilleringmann_Knospe_Heite_Schumacher_Goser_2002, title={A silicon
    based technology for monolithic integration of waveguides and VLSI CMOS circuits},
    volume={15}, DOI={<a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Knospe, K. and Heite, C. and Schumacher, K.
    and Goser, K.}, year={2002}, pages={289–292} }'
  chicago: 'Hilleringmann, Ulrich, K. Knospe, C. Heite, K. Schumacher, and K. Goser.
    “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI
    CMOS Circuits.” <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 289–92.
    <a href="https://doi.org/10.1016/0167-9317(91)90231-2">https://doi.org/10.1016/0167-9317(91)90231-2</a>.'
  ieee: 'U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, and K. Goser, “A silicon
    based technology for monolithic integration of waveguides and VLSI CMOS circuits,”
    <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 289–292, 2002, doi:
    <a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>.'
  mla: Hilleringmann, Ulrich, et al. “A Silicon Based Technology for Monolithic Integration
    of Waveguides and VLSI CMOS Circuits.” <i>Microelectronic Engineering</i>, vol.
    15, no. 1–4, Elsevier BV, 2002, pp. 289–92, doi:<a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>.
  short: U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, K. Goser, Microelectronic
    Engineering 15 (2002) 289–292.
date_created: 2023-01-25T09:29:32Z
date_updated: 2023-03-22T10:29:08Z
department:
- _id: '59'
doi: 10.1016/0167-9317(91)90231-2
intvolume: '        15'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 289-292
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: A silicon based technology for monolithic integration of waveguides and VLSI
  CMOS circuits
type: journal_article
user_id: '20179'
volume: 15
year: '2002'
...
---
_id: '39920'
author:
- first_name: A.
  full_name: Soennecken, A.
  last_name: Soennecken
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile
    analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic
    Engineering</i>. 2002;15(1-4):633-636. doi:<a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>
  apa: Soennecken, A., Hilleringmann, U., &#38; Goser, K. (2002). Floating gate structures
    as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica.
    <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 633–636. <a href="https://doi.org/10.1016/0167-9317(91)90299-s">https://doi.org/10.1016/0167-9317(91)90299-s</a>
  bibtex: '@article{Soennecken_Hilleringmann_Goser_2002, title={Floating gate structures
    as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica},
    volume={15}, DOI={<a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}, year={2002},
    pages={633–636} }'
  chicago: 'Soennecken, A., Ulrich Hilleringmann, and K. Goser. “Floating Gate Structures
    as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.”
    <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 633–36. <a href="https://doi.org/10.1016/0167-9317(91)90299-s">https://doi.org/10.1016/0167-9317(91)90299-s</a>.'
  ieee: 'A. Soennecken, U. Hilleringmann, and K. Goser, “Floating gate structures
    as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica,”
    <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 633–636, 2002, doi:
    <a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>.'
  mla: Soennecken, A., et al. “Floating Gate Structures as Nonvolatile Analog Memory
    Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic
    Engineering</i>, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 633–36, doi:<a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>.
  short: A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering 15
    (2002) 633–636.
date_created: 2023-01-25T09:29:53Z
date_updated: 2023-03-21T09:47:17Z
department:
- _id: '59'
doi: 10.1016/0167-9317(91)90299-s
intvolume: '        15'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 633-636
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS
  technology with PZT dielectrica
type: journal_article
user_id: '20179'
volume: 15
year: '2002'
...
---
_id: '39915'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides,
    photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>.
    2002;19(1-4):211-214. doi:<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>
  apa: Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration
    of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic
    Engineering</i>, <i>19</i>(1–4), 211–214. <a href="https://doi.org/10.1016/0167-9317(92)90425-q">https://doi.org/10.1016/0167-9317(92)90425-q</a>
  bibtex: '@article{Hilleringmann_Goser_2002, title={Results of monolithic integration
    of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19},
    DOI={<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }'
  chicago: 'Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration
    of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic
    Engineering</i> 19, no. 1–4 (2002): 211–14. <a href="https://doi.org/10.1016/0167-9317(92)90425-q">https://doi.org/10.1016/0167-9317(92)90425-q</a>.'
  ieee: 'U. Hilleringmann and K. Goser, “Results of monolithic integration of optical
    waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>,
    vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>.'
  mla: Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of
    Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic
    Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>.
  short: U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.
date_created: 2023-01-25T09:27:51Z
date_updated: 2023-03-21T09:49:09Z
department:
- _id: '59'
doi: 10.1016/0167-9317(92)90425-q
intvolume: '        19'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 211-214
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Results of monolithic integration of optical waveguides, photodiodes and CMOS
  circuits on silicon
type: journal_article
user_id: '20179'
volume: 19
year: '2002'
...
---
_id: '39916'
author:
- first_name: S.
  full_name: Adams, S.
  last_name: Adams
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching
    techniques. <i>Microelectronic Engineering</i>. 2002;19(1-4):191-194. doi:<a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>
  apa: Adams, S., Hilleringmann, U., &#38; Goser, K. (2002). CMOS compatible micromachining
    by dry silicon-etching techniques. <i>Microelectronic Engineering</i>, <i>19</i>(1–4),
    191–194. <a href="https://doi.org/10.1016/0167-9317(92)90420-v">https://doi.org/10.1016/0167-9317(92)90420-v</a>
  bibtex: '@article{Adams_Hilleringmann_Goser_2002, title={CMOS compatible micromachining
    by dry silicon-etching techniques}, volume={19}, DOI={<a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Adams, S. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={191–194}
    }'
  chicago: 'Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining
    by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i> 19, no.
    1–4 (2002): 191–94. <a href="https://doi.org/10.1016/0167-9317(92)90420-v">https://doi.org/10.1016/0167-9317(92)90420-v</a>.'
  ieee: 'S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining
    by dry silicon-etching techniques,” <i>Microelectronic Engineering</i>, vol. 19,
    no. 1–4, pp. 191–194, 2002, doi: <a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>.'
  mla: Adams, S., et al. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.”
    <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 191–94,
    doi:<a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>.
  short: S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002)
    191–194.
date_created: 2023-01-25T09:28:16Z
date_updated: 2023-03-21T09:48:55Z
department:
- _id: '59'
doi: 10.1016/0167-9317(92)90420-v
intvolume: '        19'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 191-194
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: CMOS compatible micromachining by dry silicon-etching techniques
type: journal_article
user_id: '20179'
volume: 19
year: '2002'
...
---
_id: '39889'
author:
- first_name: V.
  full_name: Mankowski, V.
  last_name: Mankowski
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light
    triggered switch on one silicon chip. <i>Microelectronic Engineering</i>. 2002;46(1-4):413-417.
    doi:<a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>
  apa: Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). 12 kV low current
    cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>,
    <i>46</i>(1–4), 413–417. <a href="https://doi.org/10.1016/s0167-9317(99)00122-7">https://doi.org/10.1016/s0167-9317(99)00122-7</a>
  bibtex: '@article{Mankowski_Hilleringmann_Schumacher_2002, title={12 kV low current
    cascaded light triggered switch on one silicon chip}, volume={46}, DOI={<a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002},
    pages={413–417} }'
  chicago: 'Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “12 KV Low Current
    Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i>
    46, no. 1–4 (2002): 413–17. <a href="https://doi.org/10.1016/s0167-9317(99)00122-7">https://doi.org/10.1016/s0167-9317(99)00122-7</a>.'
  ieee: 'V. Mankowski, U. Hilleringmann, and K. Schumacher, “12 kV low current cascaded
    light triggered switch on one silicon chip,” <i>Microelectronic Engineering</i>,
    vol. 46, no. 1–4, pp. 413–417, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>.'
  mla: Mankowski, V., et al. “12 KV Low Current Cascaded Light Triggered Switch on
    One Silicon Chip.” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, Elsevier
    BV, 2002, pp. 413–17, doi:<a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>.
  short: V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering
    46 (2002) 413–417.
date_created: 2023-01-25T09:13:17Z
date_updated: 2023-03-21T09:58:35Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(99)00122-7
intvolume: '        46'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 413-417
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: 12 kV low current cascaded light triggered switch on one silicon chip
type: journal_article
user_id: '20179'
volume: 46
year: '2002'
...
---
_id: '39877'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: T.
  full_name: Vieregge, T.
  last_name: Vieregge
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
citation:
  ama: Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique
    for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>.
    2002;53(1-4):569-572. doi:<a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>
  apa: Hilleringmann, U., Vieregge, T., &#38; Horstmann, J. T. (2002). A structure
    definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic
    Engineering</i>, <i>53</i>(1–4), 569–572. <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">https://doi.org/10.1016/s0167-9317(00)00380-4</a>
  bibtex: '@article{Hilleringmann_Vieregge_Horstmann_2002, title={A structure definition
    technique for 25 nm lines of silicon and related materials}, volume={53}, DOI={<a
    href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2002},
    pages={569–572} }'
  chicago: 'Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition
    Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic
    Engineering</i> 53, no. 1–4 (2002): 569–72. <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">https://doi.org/10.1016/s0167-9317(00)00380-4</a>.'
  ieee: 'U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “A structure definition
    technique for 25 nm lines of silicon and related materials,” <i>Microelectronic
    Engineering</i>, vol. 53, no. 1–4, pp. 569–572, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>.'
  mla: Hilleringmann, Ulrich, et al. “A Structure Definition Technique for 25 Nm Lines
    of Silicon and Related Materials.” <i>Microelectronic Engineering</i>, vol. 53,
    no. 1–4, Elsevier BV, 2002, pp. 569–72, doi:<a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>.
  short: U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering
    53 (2002) 569–572.
date_created: 2023-01-25T09:08:13Z
date_updated: 2023-03-21T10:03:00Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(00)00380-4
intvolume: '        53'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 569-572
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: A structure definition technique for 25 nm lines of silicon and related materials
type: journal_article
user_id: '20179'
volume: 53
year: '2002'
...