[{"year":"2016","title":"Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots","status":"public","publication_identifier":{"issn":["0168-583X"]},"author":[{"first_name":"Charlotte","last_name":"Rothfuchs","full_name":"Rothfuchs, Charlotte"},{"first_name":"Nadezhda","last_name":"Kukharchyk","full_name":"Kukharchyk, Nadezhda"},{"first_name":"Tristan","last_name":"Koppe","full_name":"Koppe, Tristan"},{"full_name":"Semond, Fabrice","last_name":"Semond","first_name":"Fabrice"},{"last_name":"Blumenthal","first_name":"Sarah","full_name":"Blumenthal, Sarah"},{"full_name":"Becker, Hans-Werner","first_name":"Hans-Werner","last_name":"Becker"},{"id":"14","last_name":"As","first_name":"Donat Josef","orcid":"0000-0003-1121-3565","full_name":"As, Donat Josef"},{"full_name":"Hofsäss, Hans C.","last_name":"Hofsäss","first_name":"Hans C."},{"full_name":"Wieck, Andreas D.","last_name":"Wieck","first_name":"Andreas D."},{"full_name":"Ludwig, Arne","first_name":"Arne","last_name":"Ludwig"}],"date_updated":"2022-01-06T07:01:25Z","publication_status":"published","intvolume":"       383","page":"1-5","publisher":"Elsevier BV","_id":"4817","doi":"10.1016/j.nimb.2016.06.004","user_id":"14","volume":383,"publication":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms","citation":{"mla":"Rothfuchs, Charlotte, et al. “Photoluminescence of Gallium Ion Irradiated Hexagonal and Cubic GaN Quantum Dots.” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, vol. 383, Elsevier BV, 2016, pp. 1–5, doi:<a href=\"https://doi.org/10.1016/j.nimb.2016.06.004\">10.1016/j.nimb.2016.06.004</a>.","ama":"Rothfuchs C, Kukharchyk N, Koppe T, et al. Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots. <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>. 2016;383:1-5. doi:<a href=\"https://doi.org/10.1016/j.nimb.2016.06.004\">10.1016/j.nimb.2016.06.004</a>","bibtex":"@article{Rothfuchs_Kukharchyk_Koppe_Semond_Blumenthal_Becker_As_Hofsäss_Wieck_Ludwig_2016, title={Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots}, volume={383}, DOI={<a href=\"https://doi.org/10.1016/j.nimb.2016.06.004\">10.1016/j.nimb.2016.06.004</a>}, journal={Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}, publisher={Elsevier BV}, author={Rothfuchs, Charlotte and Kukharchyk, Nadezhda and Koppe, Tristan and Semond, Fabrice and Blumenthal, Sarah and Becker, Hans-Werner and As, Donat Josef and Hofsäss, Hans C. and Wieck, Andreas D. and Ludwig, Arne}, year={2016}, pages={1–5} }","apa":"Rothfuchs, C., Kukharchyk, N., Koppe, T., Semond, F., Blumenthal, S., Becker, H.-W., … Ludwig, A. (2016). Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots. <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, <i>383</i>, 1–5. <a href=\"https://doi.org/10.1016/j.nimb.2016.06.004\">https://doi.org/10.1016/j.nimb.2016.06.004</a>","ieee":"C. Rothfuchs <i>et al.</i>, “Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots,” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, vol. 383, pp. 1–5, 2016.","short":"C. Rothfuchs, N. Kukharchyk, T. Koppe, F. Semond, S. Blumenthal, H.-W. Becker, D.J. As, H.C. Hofsäss, A.D. Wieck, A. Ludwig, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 383 (2016) 1–5.","chicago":"Rothfuchs, Charlotte, Nadezhda Kukharchyk, Tristan Koppe, Fabrice Semond, Sarah Blumenthal, Hans-Werner Becker, Donat Josef As, Hans C. Hofsäss, Andreas D. Wieck, and Arne Ludwig. “Photoluminescence of Gallium Ion Irradiated Hexagonal and Cubic GaN Quantum Dots.” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i> 383 (2016): 1–5. <a href=\"https://doi.org/10.1016/j.nimb.2016.06.004\">https://doi.org/10.1016/j.nimb.2016.06.004</a>."},"date_created":"2018-10-24T08:07:16Z","type":"journal_article"},{"file_date_updated":"2018-08-27T12:29:34Z","citation":{"bibtex":"@article{Häberlen_Murphy_Stritzker_Lindner_2011, title={Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering}, volume={272}, DOI={<a href=\"https://doi.org/10.1016/j.nimb.2011.01.092\">10.1016/j.nimb.2011.01.092</a>}, journal={Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}, publisher={Elsevier BV}, author={Häberlen, M. and Murphy, B. and Stritzker, B. and Lindner, Jörg}, year={2011}, pages={322–325} }","ama":"Häberlen M, Murphy B, Stritzker B, Lindner J. Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering. <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>. 2011;272:322-325. doi:<a href=\"https://doi.org/10.1016/j.nimb.2011.01.092\">10.1016/j.nimb.2011.01.092</a>","mla":"Häberlen, M., et al. “Relaxation of a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Beam Defect Engineering.” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, vol. 272, Elsevier BV, 2011, pp. 322–25, doi:<a href=\"https://doi.org/10.1016/j.nimb.2011.01.092\">10.1016/j.nimb.2011.01.092</a>.","chicago":"Häberlen, M., B. Murphy, B. Stritzker, and Jörg Lindner. “Relaxation of a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Beam Defect Engineering.” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i> 272 (2011): 322–25. <a href=\"https://doi.org/10.1016/j.nimb.2011.01.092\">https://doi.org/10.1016/j.nimb.2011.01.092</a>.","short":"M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 272 (2011) 322–325.","ieee":"M. Häberlen, B. Murphy, B. Stritzker, and J. Lindner, “Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering,” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, vol. 272, pp. 322–325, 2011.","apa":"Häberlen, M., Murphy, B., Stritzker, B., &#38; Lindner, J. (2011). Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering. <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, <i>272</i>, 322–325. <a href=\"https://doi.org/10.1016/j.nimb.2011.01.092\">https://doi.org/10.1016/j.nimb.2011.01.092</a>"},"user_id":"55706","ddc":["530"],"volume":272,"page":"322-325","_id":"4140","publisher":"Elsevier BV","has_accepted_license":"1","status":"public","type":"journal_article","department":[{"_id":"15"},{"_id":"286"}],"file":[{"file_id":"4141","content_type":"application/pdf","success":1,"file_name":"Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering.pdf","file_size":772335,"access_level":"closed","relation":"main_file","date_updated":"2018-08-27T12:29:34Z","date_created":"2018-08-27T12:29:34Z","creator":"hclaudia"}],"date_created":"2018-08-27T12:27:23Z","abstract":[{"text":"In this paper we report on the successful reduction of tensile strain in a thin strained ion-beam\r\nsynthesized 3C-SiC(1 1 1) layer on silicon. The creation of a near-interface defect structure consisting\r\nof nanometric voids and stacking fault type defects by He ion implantation and subsequent annealing\r\nyields significant relaxation in the top SiC film. The microstructure of the defect layer is studied by transmission electron microscopy, and the strain state of the 3C-SiC layer was studied by high-resolution X-ray diffraction in a parallel beam configuration. Typical process conditions for the growth of GaN films on the SiC layer were emulated by high temperature treatments in a rapid thermal annealer or a quartz tube furnace. It is found that prolonged annealing at high temperatures leads to ripening of the voids and to a weaker reduction of the tensile strain. It is shown that this problem can be overcome by the co-implantation of oxygen ions to form highly thermally stable void/extended defect structures.","lang":"eng"}],"publication":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms","doi":"10.1016/j.nimb.2011.01.092","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2022-01-06T07:00:23Z","article_type":"original","intvolume":"       272","title":"Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering","year":"2011","publication_identifier":{"issn":["0168-583X"]},"author":[{"first_name":"M.","last_name":"Häberlen","full_name":"Häberlen, M."},{"last_name":"Murphy","first_name":"B.","full_name":"Murphy, B."},{"last_name":"Stritzker","first_name":"B.","full_name":"Stritzker, B."},{"first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg","id":"20797"}]},{"publisher":"Elsevier BV","_id":"4221","page":"1394-1397","volume":267,"ddc":["530"],"user_id":"55706","status":"public","has_accepted_license":"1","citation":{"mla":"Lindner, Jörg, et al. “Regular Surface Patterns by Local Swelling Induced by He Implantation into Silicon through Nanosphere Lithography Masks.” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, vol. 267, no. 8–9, Elsevier BV, 2009, pp. 1394–97, doi:<a href=\"https://doi.org/10.1016/j.nimb.2009.01.052\">10.1016/j.nimb.2009.01.052</a>.","ama":"Lindner J, Seider C, Fischer F, Weinl M, Stritzker B. Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks. <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>. 2009;267(8-9):1394-1397. doi:<a href=\"https://doi.org/10.1016/j.nimb.2009.01.052\">10.1016/j.nimb.2009.01.052</a>","bibtex":"@article{Lindner_Seider_Fischer_Weinl_Stritzker_2009, title={Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks}, volume={267}, DOI={<a href=\"https://doi.org/10.1016/j.nimb.2009.01.052\">10.1016/j.nimb.2009.01.052</a>}, number={8–9}, journal={Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}, publisher={Elsevier BV}, author={Lindner, Jörg and Seider, C. and Fischer, F. and Weinl, M. and Stritzker, B.}, year={2009}, pages={1394–1397} }","apa":"Lindner, J., Seider, C., Fischer, F., Weinl, M., &#38; Stritzker, B. (2009). Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks. <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, <i>267</i>(8–9), 1394–1397. <a href=\"https://doi.org/10.1016/j.nimb.2009.01.052\">https://doi.org/10.1016/j.nimb.2009.01.052</a>","ieee":"J. Lindner, C. Seider, F. Fischer, M. Weinl, and B. Stritzker, “Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks,” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, vol. 267, no. 8–9, pp. 1394–1397, 2009.","short":"J. Lindner, C. Seider, F. Fischer, M. Weinl, B. Stritzker, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 267 (2009) 1394–1397.","chicago":"Lindner, Jörg, C. Seider, F. Fischer, M. Weinl, and B. Stritzker. “Regular Surface Patterns by Local Swelling Induced by He Implantation into Silicon through Nanosphere Lithography Masks.” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i> 267, no. 8–9 (2009): 1394–97. <a href=\"https://doi.org/10.1016/j.nimb.2009.01.052\">https://doi.org/10.1016/j.nimb.2009.01.052</a>."},"file_date_updated":"2018-08-28T13:05:32Z","language":[{"iso":"eng"}],"doi":"10.1016/j.nimb.2009.01.052","author":[{"full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg","id":"20797"},{"first_name":"C.","last_name":"Seider","full_name":"Seider, C."},{"last_name":"Fischer","first_name":"F.","full_name":"Fischer, F."},{"last_name":"Weinl","first_name":"M.","full_name":"Weinl, M."},{"first_name":"B.","last_name":"Stritzker","full_name":"Stritzker, B."}],"publication_identifier":{"issn":["0168-583X"]},"year":"2009","title":"Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks","intvolume":"       267","article_type":"original","date_updated":"2022-01-06T07:00:38Z","publication_status":"published","date_created":"2018-08-28T13:04:23Z","file":[{"creator":"hclaudia","date_created":"2018-08-28T13:05:32Z","relation":"main_file","date_updated":"2018-08-28T13:05:32Z","file_name":"Regular Silicon Surface Patterns by Local Swelling Induced by He Implantation through Nanosphere Lithography Masks.pdf","file_size":467219,"access_level":"closed","file_id":"4222","success":1,"content_type":"application/pdf"}],"type":"journal_article","publication":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms","issue":"8-9","abstract":[{"lang":"eng","text":"Nanopatterning of silicon surfaces by means of He+ ion implantation through self-organized colloidal\r\nmasks is reported for the first time. Nanosphere lithography (NSL) masks with mask openings of 46–\r\n230 nm width were deposited on Si(100) wafers. He+ ions were implanted through these masks in order\r\nto induce a local cavity formation and Si surface swelling. The surface morphology and the subsurface\r\nstructure were studied using atomic force microscopy (AFM) and cross-sectional transmission electron\r\nmicroscopy (XTEM), respectively, as a function of mask and implantation parameters. It is demonstrated\r\nthat regular arrays of both individual hillocks and trough-like circular rings can be generated."}],"extern":"1"},{"year":"2009","title":"Radiation suppressed oxide growth in the system Ni–Ti–O","publication_identifier":{"issn":["0168-583X"]},"author":[{"full_name":"Lutz, J.","first_name":"J.","last_name":"Lutz"},{"full_name":"Gerlach, J.W.","first_name":"J.W.","last_name":"Gerlach"},{"id":"20797","first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg"},{"full_name":"Assmann, W.","first_name":"W.","last_name":"Assmann"},{"full_name":"Mändl, S.","first_name":"S.","last_name":"Mändl"}],"date_updated":"2022-01-06T07:00:39Z","publication_status":"published","intvolume":"       267","article_type":"original","language":[{"iso":"eng"}],"doi":"10.1016/j.nimb.2009.01.068","publication":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms","issue":"8-9","abstract":[{"lang":"eng","text":"The formation of a thick protective oxide layer on NiTi by plasma immersion ion implantation (PIII) for\r\nmedical devices is an established technology on the laboratory scale. It is shown here that by pre-implantation\r\nwith either 180 keV Ni or low fluence of 190 MeV Au ions, a radiation suppressed growth of the\r\noxide layer of up to 40% is observed. At higher Au fluence and higher PIII temperatures, this changes into\r\nan enhancement of 25–40%. Different amorphisation mechanisms or disorder formation is proposed as\r\nthe underlying effect."}],"extern":"1","file":[{"success":1,"content_type":"application/pdf","file_id":"4224","access_level":"closed","file_size":342798,"file_name":"Radiation Suppressed Diffusion in the System Ni-Ti-O.pdf","date_updated":"2018-08-28T13:07:49Z","relation":"main_file","date_created":"2018-08-28T13:07:49Z","creator":"hclaudia"}],"date_created":"2018-08-28T13:07:17Z","type":"journal_article","status":"public","has_accepted_license":"1","page":"1634-1637","_id":"4223","publisher":"Elsevier BV","ddc":["530"],"user_id":"55706","volume":267,"file_date_updated":"2018-08-28T13:07:49Z","citation":{"apa":"Lutz, J., Gerlach, J. W., Lindner, J., Assmann, W., &#38; Mändl, S. (2009). Radiation suppressed oxide growth in the system Ni–Ti–O. <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, <i>267</i>(8–9), 1634–1637. <a href=\"https://doi.org/10.1016/j.nimb.2009.01.068\">https://doi.org/10.1016/j.nimb.2009.01.068</a>","ieee":"J. Lutz, J. W. Gerlach, J. Lindner, W. Assmann, and S. Mändl, “Radiation suppressed oxide growth in the system Ni–Ti–O,” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, vol. 267, no. 8–9, pp. 1634–1637, 2009.","short":"J. Lutz, J.W. Gerlach, J. Lindner, W. Assmann, S. Mändl, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 267 (2009) 1634–1637.","chicago":"Lutz, J., J.W. Gerlach, Jörg Lindner, W. Assmann, and S. Mändl. “Radiation Suppressed Oxide Growth in the System Ni–Ti–O.” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i> 267, no. 8–9 (2009): 1634–37. <a href=\"https://doi.org/10.1016/j.nimb.2009.01.068\">https://doi.org/10.1016/j.nimb.2009.01.068</a>.","mla":"Lutz, J., et al. “Radiation Suppressed Oxide Growth in the System Ni–Ti–O.” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, vol. 267, no. 8–9, Elsevier BV, 2009, pp. 1634–37, doi:<a href=\"https://doi.org/10.1016/j.nimb.2009.01.068\">10.1016/j.nimb.2009.01.068</a>.","ama":"Lutz J, Gerlach JW, Lindner J, Assmann W, Mändl S. Radiation suppressed oxide growth in the system Ni–Ti–O. <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>. 2009;267(8-9):1634-1637. doi:<a href=\"https://doi.org/10.1016/j.nimb.2009.01.068\">10.1016/j.nimb.2009.01.068</a>","bibtex":"@article{Lutz_Gerlach_Lindner_Assmann_Mändl_2009, title={Radiation suppressed oxide growth in the system Ni–Ti–O}, volume={267}, DOI={<a href=\"https://doi.org/10.1016/j.nimb.2009.01.068\">10.1016/j.nimb.2009.01.068</a>}, number={8–9}, journal={Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}, publisher={Elsevier BV}, author={Lutz, J. and Gerlach, J.W. and Lindner, Jörg and Assmann, W. and Mändl, S.}, year={2009}, pages={1634–1637} }"}}]