---
_id: '4817'
author:
- first_name: Charlotte
full_name: Rothfuchs, Charlotte
last_name: Rothfuchs
- first_name: Nadezhda
full_name: Kukharchyk, Nadezhda
last_name: Kukharchyk
- first_name: Tristan
full_name: Koppe, Tristan
last_name: Koppe
- first_name: Fabrice
full_name: Semond, Fabrice
last_name: Semond
- first_name: Sarah
full_name: Blumenthal, Sarah
last_name: Blumenthal
- first_name: Hans-Werner
full_name: Becker, Hans-Werner
last_name: Becker
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Hans C.
full_name: Hofsäss, Hans C.
last_name: Hofsäss
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
citation:
ama: 'Rothfuchs C, Kukharchyk N, Koppe T, et al. Photoluminescence of gallium ion
irradiated hexagonal and cubic GaN quantum dots. Nuclear Instruments and Methods
in Physics Research Section B: Beam Interactions with Materials and Atoms.
2016;383:1-5. doi:10.1016/j.nimb.2016.06.004'
apa: 'Rothfuchs, C., Kukharchyk, N., Koppe, T., Semond, F., Blumenthal, S., Becker,
H.-W., … Ludwig, A. (2016). Photoluminescence of gallium ion irradiated hexagonal
and cubic GaN quantum dots. Nuclear Instruments and Methods in Physics Research
Section B: Beam Interactions with Materials and Atoms, 383, 1–5. https://doi.org/10.1016/j.nimb.2016.06.004'
bibtex: '@article{Rothfuchs_Kukharchyk_Koppe_Semond_Blumenthal_Becker_As_Hofsäss_Wieck_Ludwig_2016,
title={Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum
dots}, volume={383}, DOI={10.1016/j.nimb.2016.06.004},
journal={Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions
with Materials and Atoms}, publisher={Elsevier BV}, author={Rothfuchs, Charlotte
and Kukharchyk, Nadezhda and Koppe, Tristan and Semond, Fabrice and Blumenthal,
Sarah and Becker, Hans-Werner and As, Donat Josef and Hofsäss, Hans C. and Wieck,
Andreas D. and Ludwig, Arne}, year={2016}, pages={1–5} }'
chicago: 'Rothfuchs, Charlotte, Nadezhda Kukharchyk, Tristan Koppe, Fabrice Semond,
Sarah Blumenthal, Hans-Werner Becker, Donat Josef As, Hans C. Hofsäss, Andreas
D. Wieck, and Arne Ludwig. “Photoluminescence of Gallium Ion Irradiated Hexagonal
and Cubic GaN Quantum Dots.” Nuclear Instruments and Methods in Physics Research
Section B: Beam Interactions with Materials and Atoms 383 (2016): 1–5. https://doi.org/10.1016/j.nimb.2016.06.004.'
ieee: 'C. Rothfuchs et al., “Photoluminescence of gallium ion irradiated
hexagonal and cubic GaN quantum dots,” Nuclear Instruments and Methods in Physics
Research Section B: Beam Interactions with Materials and Atoms, vol. 383,
pp. 1–5, 2016.'
mla: 'Rothfuchs, Charlotte, et al. “Photoluminescence of Gallium Ion Irradiated
Hexagonal and Cubic GaN Quantum Dots.” Nuclear Instruments and Methods in Physics
Research Section B: Beam Interactions with Materials and Atoms, vol. 383,
Elsevier BV, 2016, pp. 1–5, doi:10.1016/j.nimb.2016.06.004.'
short: 'C. Rothfuchs, N. Kukharchyk, T. Koppe, F. Semond, S. Blumenthal, H.-W. Becker,
D.J. As, H.C. Hofsäss, A.D. Wieck, A. Ludwig, Nuclear Instruments and Methods
in Physics Research Section B: Beam Interactions with Materials and Atoms 383
(2016) 1–5.'
date_created: 2018-10-24T08:07:16Z
date_updated: 2022-01-06T07:01:25Z
doi: 10.1016/j.nimb.2016.06.004
intvolume: ' 383'
page: 1-5
publication: 'Nuclear Instruments and Methods in Physics Research Section B: Beam
Interactions with Materials and Atoms'
publication_identifier:
issn:
- 0168-583X
publication_status: published
publisher: Elsevier BV
status: public
title: Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum
dots
type: journal_article
user_id: '14'
volume: 383
year: '2016'
...
---
_id: '4140'
abstract:
- lang: eng
text: "In this paper we report on the successful reduction of tensile strain in
a thin strained ion-beam\r\nsynthesized 3C-SiC(1 1 1) layer on silicon. The creation
of a near-interface defect structure consisting\r\nof nanometric voids and stacking
fault type defects by He ion implantation and subsequent annealing\r\nyields significant
relaxation in the top SiC film. The microstructure of the defect layer is studied
by transmission electron microscopy, and the strain state of the 3C-SiC layer
was studied by high-resolution X-ray diffraction in a parallel beam configuration.
Typical process conditions for the growth of GaN films on the SiC layer were emulated
by high temperature treatments in a rapid thermal annealer or a quartz tube furnace.
It is found that prolonged annealing at high temperatures leads to ripening of
the voids and to a weaker reduction of the tensile strain. It is shown that this
problem can be overcome by the co-implantation of oxygen ions to form highly thermally
stable void/extended defect structures."
article_type: original
author:
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: B.
full_name: Murphy, B.
last_name: Murphy
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Häberlen M, Murphy B, Stritzker B, Lindner J. Relaxation of a strained 3C-SiC(111)
thin film on silicon by He+ and O+ ion beam defect engineering. Nuclear Instruments
and Methods in Physics Research Section B: Beam Interactions with Materials and
Atoms. 2011;272:322-325. doi:10.1016/j.nimb.2011.01.092'
apa: 'Häberlen, M., Murphy, B., Stritzker, B., & Lindner, J. (2011). Relaxation
of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions
with Materials and Atoms, 272, 322–325. https://doi.org/10.1016/j.nimb.2011.01.092'
bibtex: '@article{Häberlen_Murphy_Stritzker_Lindner_2011, title={Relaxation of a
strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering},
volume={272}, DOI={10.1016/j.nimb.2011.01.092},
journal={Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions
with Materials and Atoms}, publisher={Elsevier BV}, author={Häberlen, M. and Murphy,
B. and Stritzker, B. and Lindner, Jörg}, year={2011}, pages={322–325} }'
chicago: 'Häberlen, M., B. Murphy, B. Stritzker, and Jörg Lindner. “Relaxation of
a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Beam Defect Engineering.”
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions
with Materials and Atoms 272 (2011): 322–25. https://doi.org/10.1016/j.nimb.2011.01.092.'
ieee: 'M. Häberlen, B. Murphy, B. Stritzker, and J. Lindner, “Relaxation of a strained
3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering,” Nuclear
Instruments and Methods in Physics Research Section B: Beam Interactions with
Materials and Atoms, vol. 272, pp. 322–325, 2011.'
mla: 'Häberlen, M., et al. “Relaxation of a Strained 3C-SiC(111) Thin Film on Silicon
by He+ and O+ Ion Beam Defect Engineering.” Nuclear Instruments and Methods
in Physics Research Section B: Beam Interactions with Materials and Atoms,
vol. 272, Elsevier BV, 2011, pp. 322–25, doi:10.1016/j.nimb.2011.01.092.'
short: 'M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Nuclear Instruments and
Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
272 (2011) 322–325.'
date_created: 2018-08-27T12:27:23Z
date_updated: 2022-01-06T07:00:23Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1016/j.nimb.2011.01.092
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T12:29:34Z
date_updated: 2018-08-27T12:29:34Z
file_id: '4141'
file_name: Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and
O+ ion beam defect engineering.pdf
file_size: 772335
relation: main_file
success: 1
file_date_updated: 2018-08-27T12:29:34Z
has_accepted_license: '1'
intvolume: ' 272'
language:
- iso: eng
page: 322-325
publication: 'Nuclear Instruments and Methods in Physics Research Section B: Beam
Interactions with Materials and Atoms'
publication_identifier:
issn:
- 0168-583X
publication_status: published
publisher: Elsevier BV
status: public
title: Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion
beam defect engineering
type: journal_article
user_id: '55706'
volume: 272
year: '2011'
...
---
_id: '4221'
abstract:
- lang: eng
text: "Nanopatterning of silicon surfaces by means of He+ ion implantation through
self-organized colloidal\r\nmasks is reported for the first time. Nanosphere lithography
(NSL) masks with mask openings of 46–\r\n230 nm width were deposited on Si(100)
wafers. He+ ions were implanted through these masks in order\r\nto induce a local
cavity formation and Si surface swelling. The surface morphology and the subsurface\r\nstructure
were studied using atomic force microscopy (AFM) and cross-sectional transmission
electron\r\nmicroscopy (XTEM), respectively, as a function of mask and implantation
parameters. It is demonstrated\r\nthat regular arrays of both individual hillocks
and trough-like circular rings can be generated."
article_type: original
author:
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: C.
full_name: Seider, C.
last_name: Seider
- first_name: F.
full_name: Fischer, F.
last_name: Fischer
- first_name: M.
full_name: Weinl, M.
last_name: Weinl
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
citation:
ama: 'Lindner J, Seider C, Fischer F, Weinl M, Stritzker B. Regular surface patterns
by local swelling induced by He implantation into silicon through nanosphere lithography
masks. Nuclear Instruments and Methods in Physics Research Section B: Beam
Interactions with Materials and Atoms. 2009;267(8-9):1394-1397. doi:10.1016/j.nimb.2009.01.052'
apa: 'Lindner, J., Seider, C., Fischer, F., Weinl, M., & Stritzker, B. (2009).
Regular surface patterns by local swelling induced by He implantation into silicon
through nanosphere lithography masks. Nuclear Instruments and Methods in Physics
Research Section B: Beam Interactions with Materials and Atoms, 267(8–9),
1394–1397. https://doi.org/10.1016/j.nimb.2009.01.052'
bibtex: '@article{Lindner_Seider_Fischer_Weinl_Stritzker_2009, title={Regular surface
patterns by local swelling induced by He implantation into silicon through nanosphere
lithography masks}, volume={267}, DOI={10.1016/j.nimb.2009.01.052},
number={8–9}, journal={Nuclear Instruments and Methods in Physics Research Section
B: Beam Interactions with Materials and Atoms}, publisher={Elsevier BV}, author={Lindner,
Jörg and Seider, C. and Fischer, F. and Weinl, M. and Stritzker, B.}, year={2009},
pages={1394–1397} }'
chicago: 'Lindner, Jörg, C. Seider, F. Fischer, M. Weinl, and B. Stritzker. “Regular
Surface Patterns by Local Swelling Induced by He Implantation into Silicon through
Nanosphere Lithography Masks.” Nuclear Instruments and Methods in Physics Research
Section B: Beam Interactions with Materials and Atoms 267, no. 8–9 (2009):
1394–97. https://doi.org/10.1016/j.nimb.2009.01.052.'
ieee: 'J. Lindner, C. Seider, F. Fischer, M. Weinl, and B. Stritzker, “Regular surface
patterns by local swelling induced by He implantation into silicon through nanosphere
lithography masks,” Nuclear Instruments and Methods in Physics Research Section
B: Beam Interactions with Materials and Atoms, vol. 267, no. 8–9, pp. 1394–1397,
2009.'
mla: 'Lindner, Jörg, et al. “Regular Surface Patterns by Local Swelling Induced
by He Implantation into Silicon through Nanosphere Lithography Masks.” Nuclear
Instruments and Methods in Physics Research Section B: Beam Interactions with
Materials and Atoms, vol. 267, no. 8–9, Elsevier BV, 2009, pp. 1394–97, doi:10.1016/j.nimb.2009.01.052.'
short: 'J. Lindner, C. Seider, F. Fischer, M. Weinl, B. Stritzker, Nuclear Instruments
and Methods in Physics Research Section B: Beam Interactions with Materials and
Atoms 267 (2009) 1394–1397.'
date_created: 2018-08-28T13:04:23Z
date_updated: 2022-01-06T07:00:38Z
ddc:
- '530'
doi: 10.1016/j.nimb.2009.01.052
extern: '1'
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T13:05:32Z
date_updated: 2018-08-28T13:05:32Z
file_id: '4222'
file_name: Regular Silicon Surface Patterns by Local Swelling Induced by He Implantation
through Nanosphere Lithography Masks.pdf
file_size: 467219
relation: main_file
success: 1
file_date_updated: 2018-08-28T13:05:32Z
has_accepted_license: '1'
intvolume: ' 267'
issue: 8-9
language:
- iso: eng
page: 1394-1397
publication: 'Nuclear Instruments and Methods in Physics Research Section B: Beam
Interactions with Materials and Atoms'
publication_identifier:
issn:
- 0168-583X
publication_status: published
publisher: Elsevier BV
status: public
title: Regular surface patterns by local swelling induced by He implantation into
silicon through nanosphere lithography masks
type: journal_article
user_id: '55706'
volume: 267
year: '2009'
...
---
_id: '4223'
abstract:
- lang: eng
text: "The formation of a thick protective oxide layer on NiTi by plasma immersion
ion implantation (PIII) for\r\nmedical devices is an established technology on
the laboratory scale. It is shown here that by pre-implantation\r\nwith either
180 keV Ni or low fluence of 190 MeV Au ions, a radiation suppressed growth of
the\r\noxide layer of up to 40% is observed. At higher Au fluence and higher PIII
temperatures, this changes into\r\nan enhancement of 25–40%. Different amorphisation
mechanisms or disorder formation is proposed as\r\nthe underlying effect."
article_type: original
author:
- first_name: J.
full_name: Lutz, J.
last_name: Lutz
- first_name: J.W.
full_name: Gerlach, J.W.
last_name: Gerlach
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: W.
full_name: Assmann, W.
last_name: Assmann
- first_name: S.
full_name: Mändl, S.
last_name: Mändl
citation:
ama: 'Lutz J, Gerlach JW, Lindner J, Assmann W, Mändl S. Radiation suppressed oxide
growth in the system Ni–Ti–O. Nuclear Instruments and Methods in Physics Research
Section B: Beam Interactions with Materials and Atoms. 2009;267(8-9):1634-1637.
doi:10.1016/j.nimb.2009.01.068'
apa: 'Lutz, J., Gerlach, J. W., Lindner, J., Assmann, W., & Mändl, S. (2009).
Radiation suppressed oxide growth in the system Ni–Ti–O. Nuclear Instruments
and Methods in Physics Research Section B: Beam Interactions with Materials and
Atoms, 267(8–9), 1634–1637. https://doi.org/10.1016/j.nimb.2009.01.068'
bibtex: '@article{Lutz_Gerlach_Lindner_Assmann_Mändl_2009, title={Radiation suppressed
oxide growth in the system Ni–Ti–O}, volume={267}, DOI={10.1016/j.nimb.2009.01.068},
number={8–9}, journal={Nuclear Instruments and Methods in Physics Research Section
B: Beam Interactions with Materials and Atoms}, publisher={Elsevier BV}, author={Lutz,
J. and Gerlach, J.W. and Lindner, Jörg and Assmann, W. and Mändl, S.}, year={2009},
pages={1634–1637} }'
chicago: 'Lutz, J., J.W. Gerlach, Jörg Lindner, W. Assmann, and S. Mändl. “Radiation
Suppressed Oxide Growth in the System Ni–Ti–O.” Nuclear Instruments and Methods
in Physics Research Section B: Beam Interactions with Materials and Atoms
267, no. 8–9 (2009): 1634–37. https://doi.org/10.1016/j.nimb.2009.01.068.'
ieee: 'J. Lutz, J. W. Gerlach, J. Lindner, W. Assmann, and S. Mändl, “Radiation
suppressed oxide growth in the system Ni–Ti–O,” Nuclear Instruments and Methods
in Physics Research Section B: Beam Interactions with Materials and Atoms,
vol. 267, no. 8–9, pp. 1634–1637, 2009.'
mla: 'Lutz, J., et al. “Radiation Suppressed Oxide Growth in the System Ni–Ti–O.”
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions
with Materials and Atoms, vol. 267, no. 8–9, Elsevier BV, 2009, pp. 1634–37,
doi:10.1016/j.nimb.2009.01.068.'
short: 'J. Lutz, J.W. Gerlach, J. Lindner, W. Assmann, S. Mändl, Nuclear Instruments
and Methods in Physics Research Section B: Beam Interactions with Materials and
Atoms 267 (2009) 1634–1637.'
date_created: 2018-08-28T13:07:17Z
date_updated: 2022-01-06T07:00:39Z
ddc:
- '530'
doi: 10.1016/j.nimb.2009.01.068
extern: '1'
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T13:07:49Z
date_updated: 2018-08-28T13:07:49Z
file_id: '4224'
file_name: Radiation Suppressed Diffusion in the System Ni-Ti-O.pdf
file_size: 342798
relation: main_file
success: 1
file_date_updated: 2018-08-28T13:07:49Z
has_accepted_license: '1'
intvolume: ' 267'
issue: 8-9
language:
- iso: eng
page: 1634-1637
publication: 'Nuclear Instruments and Methods in Physics Research Section B: Beam
Interactions with Materials and Atoms'
publication_identifier:
issn:
- 0168-583X
publication_status: published
publisher: Elsevier BV
status: public
title: Radiation suppressed oxide growth in the system Ni–Ti–O
type: journal_article
user_id: '55706'
volume: 267
year: '2009'
...