@article{8730, author = {{Apetrii, G and Fischer, S F and Kunze, U and Reuter, Dirk and Wieck, A D}}, issn = {{0268-1242}}, journal = {{Semiconductor Science and Technology}}, pages = {{735--739}}, title = {{{Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope}}}, doi = {{10.1088/0268-1242/17/7/317}}, year = {{2003}}, } @article{7684, author = {{Reuter, D and Meier, Cedrik and Riedesel, C and Wieck, A D}}, issn = {{0268-1242}}, journal = {{Semiconductor Science and Technology}}, number = {{6}}, pages = {{585--589}}, publisher = {{IOP Publishing}}, title = {{{Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping}}}, doi = {{10.1088/0268-1242/17/6/315}}, volume = {{17}}, year = {{2002}}, } @article{8747, author = {{Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D}}, issn = {{0268-1242}}, journal = {{Semiconductor Science and Technology}}, pages = {{603--607}}, title = {{{Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography}}}, doi = {{10.1088/0268-1242/16/7/314}}, year = {{2002}}, } @article{8768, author = {{Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D}}, issn = {{0268-1242}}, journal = {{Semiconductor Science and Technology}}, pages = {{603--607}}, title = {{{Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography}}}, doi = {{10.1088/0268-1242/16/7/314}}, year = {{2002}}, }