@article{21796, author = {{Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}}, issn = {{0268-1242}}, journal = {{Semiconductor Science and Technology}}, title = {{{Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields}}}, doi = {{10.1088/1361-6641/ab89e1}}, year = {{2020}}, } @article{12930, author = {{Köthemann, Ronja and Weber, Nils and Lindner, Jörg K N and Meier, Cedrik}}, issn = {{0268-1242}}, journal = {{Semiconductor Science and Technology}}, number = {{9}}, title = {{{High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy}}}, doi = {{10.1088/1361-6641/ab3536}}, volume = {{34}}, year = {{2019}}, } @article{19215, author = {{Kandemir, A and Akbali, B and Kahraman, Z and Badalov, S V and Ozcan, M and Iyikanat, F and Sahin, H}}, issn = {{0268-1242}}, journal = {{Semiconductor Science and Technology}}, title = {{{Structural, electronic and phononic properties of PtSe2: from monolayer to bulk}}}, doi = {{10.1088/1361-6641/aacba2}}, year = {{2018}}, } @article{7009, author = {{Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}}, issn = {{0268-1242}}, journal = {{Semiconductor Science and Technology}}, number = {{9}}, publisher = {{IOP Publishing}}, title = {{{Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures}}}, doi = {{10.1088/1361-6641/aad83d}}, volume = {{33}}, year = {{2018}}, } @article{7282, author = {{Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}}, issn = {{0268-1242}}, journal = {{Semiconductor Science and Technology}}, number = {{8}}, publisher = {{IOP Publishing}}, title = {{{Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures}}}, doi = {{10.1088/0268-1242/28/8/085012}}, volume = {{28}}, year = {{2013}}, } @article{7295, author = {{Koop, E J and Iqbal, M J and Limbach, F and Boute, M and van Wees, B J and Reuter, Dirk and Wieck, A D and Kooi, B J and van der Wal, C H}}, issn = {{0268-1242}}, journal = {{Semiconductor Science and Technology}}, number = {{2}}, publisher = {{IOP Publishing}}, title = {{{On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures}}}, doi = {{10.1088/0268-1242/28/2/025006}}, volume = {{28}}, year = {{2013}}, } @article{4545, abstract = {{Laser irradiation damage in ZnTe epilayers was analyzed in situ by power-density-dependent and time-resolved micro-Raman spectroscopy. Damage by ablation or compound decomposition on the sample surface was revealed by the decrease of the ZnTe–nLO mode intensity with the increase of laser power density. The appearance of the peaks associated with the stronger crystalline-tellurium modes, tellurium aggregates and second-order Raman scattering at room temperature μ-Raman spectra was observed for higher power densities than 4.4 × 105 W cm−2. The Raman signal time transients of ZnTe–nLO and crystalline-tellurium modes reveal an exponential evolution of the laser irradiation damage and a fast formation of crystalline tellurium aggregates on the layer surface.}}, author = {{Wiedemeier, V and Berth, Gerhard and Zrenner, Artur and Larramendi, E M and Woggon, U and Lischka, K and Schikora, D}}, issn = {{0268-1242}}, journal = {{Semiconductor Science and Technology}}, number = {{10}}, publisher = {{IOP Publishing}}, title = {{{In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy}}}, doi = {{10.1088/0268-1242/26/10/105023}}, volume = {{26}}, year = {{2011}}, } @article{4549, abstract = {{Damage caused by laser irradiation on the surface of ZnTe epilayers was studied by micro-Raman and atomic force microscopy (AFM). ZnTe LO-phonon overtones up to four order and TO + (n − 1)LO zone-center phonons were observed in the resonant micro-Raman spectra at room temperature. Discrepancies in the literature regarding the origin of two features observed at low frequencies around 120 and 140 cm−1 in the Raman spectrum of ZnTe are discussed and resolved. These Raman peaks were not detected by using a low excitation laser power density on a Zn-terminated ZnTe surface; however, with the increase of the laser power density they were found to arise irreversibly. The correspondence of these peaks in a wave number with the strongest Raman peaks of the crystalline tellurium phase and the intensity enhancement behavior with the laser power in a similar way as for CdTe strongly suggests the formation of crystalline tellurium aggregates on the layer surface due to laser irradiation damage. AFM data reveal the occurrence of laser ablation on the ZnTe surface even though the surface temperature of the sample is below the melting point.}}, author = {{Larramendi, E M and Berth, Gerhard and Wiedemeier, V and Hüsch, K-P and Zrenner, Artur and Woggon, U and Tschumak, E and Lischka, K and Schikora, D}}, issn = {{0268-1242}}, journal = {{Semiconductor Science and Technology}}, number = {{7}}, publisher = {{IOP Publishing}}, title = {{{Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers}}}, doi = {{10.1088/0268-1242/25/7/075003}}, volume = {{25}}, year = {{2010}}, } @article{8693, author = {{Knop, M and Richter, M and Maßmann, R and Wieser, U and Kunze, U and Reuter, Dirk and Riedesel, C and Wieck, A D}}, issn = {{0268-1242}}, journal = {{Semiconductor Science and Technology}}, pages = {{814--818}}, title = {{{Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene}}}, doi = {{10.1088/0268-1242/20/8/031}}, year = {{2005}}, } @article{8692, author = {{Kähler, D and Knop, M and Kunze, U and Reuter, Dirk and Wieck, A D}}, issn = {{0268-1242}}, journal = {{Semiconductor Science and Technology}}, pages = {{140--143}}, title = {{{Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation}}}, doi = {{10.1088/0268-1242/20/2/006}}, year = {{2004}}, }