@article{8730,
  author       = {{Apetrii, G and Fischer, S F and Kunze, U and Reuter, Dirk and Wieck, A D}},
  issn         = {{0268-1242}},
  journal      = {{Semiconductor Science and Technology}},
  pages        = {{735--739}},
  title        = {{{Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope}}},
  doi          = {{10.1088/0268-1242/17/7/317}},
  year         = {{2003}},
}

@article{7684,
  author       = {{Reuter, D and Meier, Cedrik and Riedesel, C and Wieck, A D}},
  issn         = {{0268-1242}},
  journal      = {{Semiconductor Science and Technology}},
  number       = {{6}},
  pages        = {{585--589}},
  publisher    = {{IOP Publishing}},
  title        = {{{Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping}}},
  doi          = {{10.1088/0268-1242/17/6/315}},
  volume       = {{17}},
  year         = {{2002}},
}

@article{8747,
  author       = {{Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D}},
  issn         = {{0268-1242}},
  journal      = {{Semiconductor Science and Technology}},
  pages        = {{603--607}},
  title        = {{{Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography}}},
  doi          = {{10.1088/0268-1242/16/7/314}},
  year         = {{2002}},
}

@article{8768,
  author       = {{Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D}},
  issn         = {{0268-1242}},
  journal      = {{Semiconductor Science and Technology}},
  pages        = {{603--607}},
  title        = {{{Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography}}},
  doi          = {{10.1088/0268-1242/16/7/314}},
  year         = {{2002}},
}