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Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope. <i>Semiconductor Science and Technology</i>. 2003:735-739. doi:<a href=\"https://doi.org/10.1088/0268-1242/17/7/317\">10.1088/0268-1242/17/7/317</a>","chicago":"Apetrii, G, S F Fischer, U Kunze, Dirk Reuter, and A D Wieck. “Influence of Processing Parameters on the Transport Properties of Quantum Point Contacts Fabricated with an Atomic Force Microscope.” <i>Semiconductor Science and Technology</i>, 2003, 735–39. <a href=\"https://doi.org/10.1088/0268-1242/17/7/317\">https://doi.org/10.1088/0268-1242/17/7/317</a>.","ieee":"G. Apetrii, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope,” <i>Semiconductor Science and Technology</i>, pp. 735–739, 2003.","apa":"Apetrii, G., Fischer, S. F., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2003). Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope. <i>Semiconductor Science and Technology</i>, 735–739. <a href=\"https://doi.org/10.1088/0268-1242/17/7/317\">https://doi.org/10.1088/0268-1242/17/7/317</a>","mla":"Apetrii, G., et al. “Influence of Processing Parameters on the Transport Properties of Quantum Point Contacts Fabricated with an Atomic Force Microscope.” <i>Semiconductor Science and Technology</i>, 2003, pp. 735–39, doi:<a href=\"https://doi.org/10.1088/0268-1242/17/7/317\">10.1088/0268-1242/17/7/317</a>.","short":"G. Apetrii, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2003) 735–739.","bibtex":"@article{Apetrii_Fischer_Kunze_Reuter_Wieck_2003, title={Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/17/7/317\">10.1088/0268-1242/17/7/317</a>}, journal={Semiconductor Science and Technology}, author={Apetrii, G and Fischer, S F and Kunze, U and Reuter, Dirk and Wieck, A D}, year={2003}, pages={735–739} }"},"publication_identifier":{"issn":["0268-1242"]},"publication_status":"published"},{"publication_status":"published","publication_identifier":{"issn":["0268-1242"]},"citation":{"apa":"Reuter, D., Meier, C., Riedesel, C., &#38; Wieck, A. D. (2002). Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping. <i>Semiconductor Science and Technology</i>, <i>17</i>(6), 585–589. <a href=\"https://doi.org/10.1088/0268-1242/17/6/315\">https://doi.org/10.1088/0268-1242/17/6/315</a>","mla":"Reuter, D., et al. “Local Two-Dimensional Electron Gas Formation in p-Doped GaAs/InyGa1 YAs/AlxGa1 XAs Heterostructures by Focused Si-Implantation Doping.” <i>Semiconductor Science and Technology</i>, vol. 17, no. 6, IOP Publishing, 2002, pp. 585–89, doi:<a href=\"https://doi.org/10.1088/0268-1242/17/6/315\">10.1088/0268-1242/17/6/315</a>.","bibtex":"@article{Reuter_Meier_Riedesel_Wieck_2002, title={Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping}, volume={17}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/17/6/315\">10.1088/0268-1242/17/6/315</a>}, number={6}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Reuter, D and Meier, Cedrik and Riedesel, C and Wieck, A D}, year={2002}, pages={585–589} }","short":"D. 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Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping. <i>Semiconductor Science and Technology</i>. 2002;17(6):585-589. doi:<a href=\"https://doi.org/10.1088/0268-1242/17/6/315\">10.1088/0268-1242/17/6/315</a>"},"page":"585-589","intvolume":"        17","author":[{"full_name":"Reuter, D","last_name":"Reuter","first_name":"D"},{"first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","id":"20798","full_name":"Meier, Cedrik"},{"first_name":"C","last_name":"Riedesel","full_name":"Riedesel, C"},{"first_name":"A D","full_name":"Wieck, A D","last_name":"Wieck"}],"volume":17,"date_updated":"2022-01-06T07:03:43Z","doi":"10.1088/0268-1242/17/6/315","type":"journal_article","status":"public","user_id":"20798","department":[{"_id":"15"}],"_id":"7684","extern":"1","issue":"6","year":"2002","date_created":"2019-02-13T14:52:18Z","publisher":"IOP Publishing","title":"Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping","publication":"Semiconductor Science and Technology","language":[{"iso":"eng"}]},{"doi":"10.1088/0268-1242/16/7/314","title":"Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography","date_created":"2019-03-29T11:24:11Z","author":[{"first_name":"Dirk","id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter"},{"last_name":"Kähler","full_name":"Kähler, D","first_name":"D"},{"first_name":"U","full_name":"Kunze, U","last_name":"Kunze"},{"first_name":"A D","last_name":"Wieck","full_name":"Wieck, A D"}],"date_updated":"2022-01-06T07:04:00Z","citation":{"apa":"Reuter, D., Kähler, D., Kunze, U., &#38; Wieck, A. D. (2002). Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. <i>Semiconductor Science and Technology</i>, 603–607. <a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">https://doi.org/10.1088/0268-1242/16/7/314</a>","mla":"Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” <i>Semiconductor Science and Technology</i>, 2002, pp. 603–07, doi:<a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">10.1088/0268-1242/16/7/314</a>.","bibtex":"@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">10.1088/0268-1242/16/7/314</a>}, journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }","short":"D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.","chicago":"Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” <i>Semiconductor Science and Technology</i>, 2002, 603–7. <a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">https://doi.org/10.1088/0268-1242/16/7/314</a>.","ieee":"D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,” <i>Semiconductor Science and Technology</i>, pp. 603–607, 2002.","ama":"Reuter D, Kähler D, Kunze U, Wieck AD. 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Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. <i>Semiconductor Science and Technology</i>, 603–607. <a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">https://doi.org/10.1088/0268-1242/16/7/314</a>","bibtex":"@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">10.1088/0268-1242/16/7/314</a>}, journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }","mla":"Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” <i>Semiconductor Science and Technology</i>, 2002, pp. 603–07, doi:<a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">10.1088/0268-1242/16/7/314</a>.","short":"D. Reuter, D. Kähler, U. 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