TY - JOUR AU - Apetrii, G AU - Fischer, S F AU - Kunze, U AU - Reuter, Dirk AU - Wieck, A D ID - 8730 JF - Semiconductor Science and Technology SN - 0268-1242 TI - Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope ER - TY - JOUR AU - Reuter, D AU - Meier, Cedrik AU - Riedesel, C AU - Wieck, A D ID - 7684 IS - 6 JF - Semiconductor Science and Technology SN - 0268-1242 TI - Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping VL - 17 ER - TY - JOUR AU - Reuter, Dirk AU - Kähler, D AU - Kunze, U AU - Wieck, A D ID - 8747 JF - Semiconductor Science and Technology SN - 0268-1242 TI - Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography ER - TY - JOUR AU - Reuter, Dirk AU - Kähler, D AU - Kunze, U AU - Wieck, A D ID - 8768 JF - Semiconductor Science and Technology SN - 0268-1242 TI - Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography ER -