---
_id: '8730'
author:
- first_name: G
full_name: Apetrii, G
last_name: Apetrii
- first_name: S F
full_name: Fischer, S F
last_name: Fischer
- first_name: U
full_name: Kunze, U
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: Apetrii G, Fischer SF, Kunze U, Reuter D, Wieck AD. Influence of processing
parameters on the transport properties of quantum point contacts fabricated with
an atomic force microscope. Semiconductor Science and Technology. 2003:735-739.
doi:10.1088/0268-1242/17/7/317
apa: Apetrii, G., Fischer, S. F., Kunze, U., Reuter, D., & Wieck, A. D. (2003).
Influence of processing parameters on the transport properties of quantum point
contacts fabricated with an atomic force microscope. Semiconductor Science
and Technology, 735–739. https://doi.org/10.1088/0268-1242/17/7/317
bibtex: '@article{Apetrii_Fischer_Kunze_Reuter_Wieck_2003, title={Influence of processing
parameters on the transport properties of quantum point contacts fabricated with
an atomic force microscope}, DOI={10.1088/0268-1242/17/7/317},
journal={Semiconductor Science and Technology}, author={Apetrii, G and Fischer,
S F and Kunze, U and Reuter, Dirk and Wieck, A D}, year={2003}, pages={735–739}
}'
chicago: Apetrii, G, S F Fischer, U Kunze, Dirk Reuter, and A D Wieck. “Influence
of Processing Parameters on the Transport Properties of Quantum Point Contacts
Fabricated with an Atomic Force Microscope.” Semiconductor Science and Technology,
2003, 735–39. https://doi.org/10.1088/0268-1242/17/7/317.
ieee: G. Apetrii, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Influence
of processing parameters on the transport properties of quantum point contacts
fabricated with an atomic force microscope,” Semiconductor Science and Technology,
pp. 735–739, 2003.
mla: Apetrii, G., et al. “Influence of Processing Parameters on the Transport Properties
of Quantum Point Contacts Fabricated with an Atomic Force Microscope.” Semiconductor
Science and Technology, 2003, pp. 735–39, doi:10.1088/0268-1242/17/7/317.
short: G. Apetrii, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor
Science and Technology (2003) 735–739.
date_created: 2019-03-28T15:07:53Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/17/7/317
language:
- iso: eng
page: 735-739
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
publication_status: published
status: public
title: Influence of processing parameters on the transport properties of quantum point
contacts fabricated with an atomic force microscope
type: journal_article
user_id: '42514'
year: '2003'
...
---
_id: '7684'
author:
- first_name: D
full_name: Reuter, D
last_name: Reuter
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: C
full_name: Riedesel, C
last_name: Riedesel
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: Reuter D, Meier C, Riedesel C, Wieck AD. Local two-dimensional electron gas
formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation
doping. Semiconductor Science and Technology. 2002;17(6):585-589. doi:10.1088/0268-1242/17/6/315
apa: Reuter, D., Meier, C., Riedesel, C., & Wieck, A. D. (2002). Local two-dimensional
electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures
by focused Si-implantation doping. Semiconductor Science and Technology,
17(6), 585–589. https://doi.org/10.1088/0268-1242/17/6/315
bibtex: '@article{Reuter_Meier_Riedesel_Wieck_2002, title={Local two-dimensional
electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures
by focused Si-implantation doping}, volume={17}, DOI={10.1088/0268-1242/17/6/315},
number={6}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing},
author={Reuter, D and Meier, Cedrik and Riedesel, C and Wieck, A D}, year={2002},
pages={585–589} }'
chicago: 'Reuter, D, Cedrik Meier, C Riedesel, and A D Wieck. “Local Two-Dimensional
Electron Gas Formation in p-Doped GaAs/InyGa1 YAs/AlxGa1 XAs Heterostructures
by Focused Si-Implantation Doping.” Semiconductor Science and Technology
17, no. 6 (2002): 585–89. https://doi.org/10.1088/0268-1242/17/6/315.'
ieee: D. Reuter, C. Meier, C. Riedesel, and A. D. Wieck, “Local two-dimensional
electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures
by focused Si-implantation doping,” Semiconductor Science and Technology,
vol. 17, no. 6, pp. 585–589, 2002.
mla: Reuter, D., et al. “Local Two-Dimensional Electron Gas Formation in p-Doped
GaAs/InyGa1 YAs/AlxGa1 XAs Heterostructures by Focused Si-Implantation Doping.”
Semiconductor Science and Technology, vol. 17, no. 6, IOP Publishing, 2002,
pp. 585–89, doi:10.1088/0268-1242/17/6/315.
short: D. Reuter, C. Meier, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology
17 (2002) 585–589.
date_created: 2019-02-13T14:52:18Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1088/0268-1242/17/6/315
extern: '1'
intvolume: ' 17'
issue: '6'
language:
- iso: eng
page: 585-589
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
publication_status: published
publisher: IOP Publishing
status: public
title: Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs
heterostructures by focused Si-implantation doping
type: journal_article
user_id: '20798'
volume: 17
year: '2002'
...
---
_id: '8747'
author:
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: D
full_name: Kähler, D
last_name: Kähler
- first_name: U
full_name: Kunze, U
last_name: Kunze
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped
AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor
Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314
apa: Reuter, D., Kähler, D., Kunze, U., & Wieck, A. D. (2002). Layer-compensated
selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography.
Semiconductor Science and Technology, 603–607. https://doi.org/10.1088/0268-1242/16/7/314
bibtex: '@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively
doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography},
DOI={10.1088/0268-1242/16/7/314},
journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler,
D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }'
chicago: Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively
Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.”
Semiconductor Science and Technology, 2002, 603–7. https://doi.org/10.1088/0268-1242/16/7/314.
ieee: D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively
doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,”
Semiconductor Science and Technology, pp. 603–607, 2002.
mla: Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures
as a Base Material for Nanolithography.” Semiconductor Science and Technology,
2002, pp. 603–07, doi:10.1088/0268-1242/16/7/314.
short: D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology
(2002) 603–607.
date_created: 2019-03-29T11:24:11Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/16/7/314
language:
- iso: eng
page: 603-607
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
status: public
title: Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base
material for nanolithography
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8768'
author:
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: D
full_name: Kähler, D
last_name: Kähler
- first_name: U
full_name: Kunze, U
last_name: Kunze
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped
AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor
Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314
apa: Reuter, D., Kähler, D., Kunze, U., & Wieck, A. D. (2002). Layer-compensated
selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography.
Semiconductor Science and Technology, 603–607. https://doi.org/10.1088/0268-1242/16/7/314
bibtex: '@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively
doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography},
DOI={10.1088/0268-1242/16/7/314},
journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler,
D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }'
chicago: Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively
Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.”
Semiconductor Science and Technology, 2002, 603–7. https://doi.org/10.1088/0268-1242/16/7/314.
ieee: D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively
doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,”
Semiconductor Science and Technology, pp. 603–607, 2002.
mla: Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures
as a Base Material for Nanolithography.” Semiconductor Science and Technology,
2002, pp. 603–07, doi:10.1088/0268-1242/16/7/314.
short: D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology
(2002) 603–607.
date_created: 2019-04-01T07:56:38Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/16/7/314
language:
- iso: eng
page: 603-607
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
status: public
title: Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base
material for nanolithography
type: journal_article
user_id: '42514'
year: '2002'
...