--- _id: '8730' author: - first_name: G full_name: Apetrii, G last_name: Apetrii - first_name: S F full_name: Fischer, S F last_name: Fischer - first_name: U full_name: Kunze, U last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A D full_name: Wieck, A D last_name: Wieck citation: ama: Apetrii G, Fischer SF, Kunze U, Reuter D, Wieck AD. Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope. Semiconductor Science and Technology. 2003:735-739. doi:10.1088/0268-1242/17/7/317 apa: Apetrii, G., Fischer, S. F., Kunze, U., Reuter, D., & Wieck, A. D. (2003). Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope. Semiconductor Science and Technology, 735–739. https://doi.org/10.1088/0268-1242/17/7/317 bibtex: '@article{Apetrii_Fischer_Kunze_Reuter_Wieck_2003, title={Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope}, DOI={10.1088/0268-1242/17/7/317}, journal={Semiconductor Science and Technology}, author={Apetrii, G and Fischer, S F and Kunze, U and Reuter, Dirk and Wieck, A D}, year={2003}, pages={735–739} }' chicago: Apetrii, G, S F Fischer, U Kunze, Dirk Reuter, and A D Wieck. “Influence of Processing Parameters on the Transport Properties of Quantum Point Contacts Fabricated with an Atomic Force Microscope.” Semiconductor Science and Technology, 2003, 735–39. https://doi.org/10.1088/0268-1242/17/7/317. ieee: G. Apetrii, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope,” Semiconductor Science and Technology, pp. 735–739, 2003. mla: Apetrii, G., et al. “Influence of Processing Parameters on the Transport Properties of Quantum Point Contacts Fabricated with an Atomic Force Microscope.” Semiconductor Science and Technology, 2003, pp. 735–39, doi:10.1088/0268-1242/17/7/317. short: G. Apetrii, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2003) 735–739. date_created: 2019-03-28T15:07:53Z date_updated: 2022-01-06T07:03:59Z department: - _id: '15' - _id: '230' doi: 10.1088/0268-1242/17/7/317 language: - iso: eng page: 735-739 publication: Semiconductor Science and Technology publication_identifier: issn: - 0268-1242 publication_status: published status: public title: Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope type: journal_article user_id: '42514' year: '2003' ... --- _id: '7684' author: - first_name: D full_name: Reuter, D last_name: Reuter - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: C full_name: Riedesel, C last_name: Riedesel - first_name: A D full_name: Wieck, A D last_name: Wieck citation: ama: Reuter D, Meier C, Riedesel C, Wieck AD. Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping. Semiconductor Science and Technology. 2002;17(6):585-589. doi:10.1088/0268-1242/17/6/315 apa: Reuter, D., Meier, C., Riedesel, C., & Wieck, A. D. (2002). Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping. Semiconductor Science and Technology, 17(6), 585–589. https://doi.org/10.1088/0268-1242/17/6/315 bibtex: '@article{Reuter_Meier_Riedesel_Wieck_2002, title={Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping}, volume={17}, DOI={10.1088/0268-1242/17/6/315}, number={6}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Reuter, D and Meier, Cedrik and Riedesel, C and Wieck, A D}, year={2002}, pages={585–589} }' chicago: 'Reuter, D, Cedrik Meier, C Riedesel, and A D Wieck. “Local Two-Dimensional Electron Gas Formation in p-Doped GaAs/InyGa1 YAs/AlxGa1 XAs Heterostructures by Focused Si-Implantation Doping.” Semiconductor Science and Technology 17, no. 6 (2002): 585–89. https://doi.org/10.1088/0268-1242/17/6/315.' ieee: D. Reuter, C. Meier, C. Riedesel, and A. D. Wieck, “Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping,” Semiconductor Science and Technology, vol. 17, no. 6, pp. 585–589, 2002. mla: Reuter, D., et al. “Local Two-Dimensional Electron Gas Formation in p-Doped GaAs/InyGa1 YAs/AlxGa1 XAs Heterostructures by Focused Si-Implantation Doping.” Semiconductor Science and Technology, vol. 17, no. 6, IOP Publishing, 2002, pp. 585–89, doi:10.1088/0268-1242/17/6/315. short: D. Reuter, C. Meier, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology 17 (2002) 585–589. date_created: 2019-02-13T14:52:18Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1088/0268-1242/17/6/315 extern: '1' intvolume: ' 17' issue: '6' language: - iso: eng page: 585-589 publication: Semiconductor Science and Technology publication_identifier: issn: - 0268-1242 publication_status: published publisher: IOP Publishing status: public title: Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation doping type: journal_article user_id: '20798' volume: 17 year: '2002' ... --- _id: '8747' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: D full_name: Kähler, D last_name: Kähler - first_name: U full_name: Kunze, U last_name: Kunze - first_name: A D full_name: Wieck, A D last_name: Wieck citation: ama: Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314 apa: Reuter, D., Kähler, D., Kunze, U., & Wieck, A. D. (2002). Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology, 603–607. https://doi.org/10.1088/0268-1242/16/7/314 bibtex: '@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography}, DOI={10.1088/0268-1242/16/7/314}, journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }' chicago: Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” Semiconductor Science and Technology, 2002, 603–7. https://doi.org/10.1088/0268-1242/16/7/314. ieee: D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,” Semiconductor Science and Technology, pp. 603–607, 2002. mla: Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” Semiconductor Science and Technology, 2002, pp. 603–07, doi:10.1088/0268-1242/16/7/314. short: D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607. date_created: 2019-03-29T11:24:11Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1088/0268-1242/16/7/314 language: - iso: eng page: 603-607 publication: Semiconductor Science and Technology publication_identifier: issn: - 0268-1242 - 1361-6641 publication_status: published status: public title: Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography type: journal_article user_id: '42514' year: '2002' ... --- _id: '8768' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: D full_name: Kähler, D last_name: Kähler - first_name: U full_name: Kunze, U last_name: Kunze - first_name: A D full_name: Wieck, A D last_name: Wieck citation: ama: Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314 apa: Reuter, D., Kähler, D., Kunze, U., & Wieck, A. D. (2002). Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology, 603–607. https://doi.org/10.1088/0268-1242/16/7/314 bibtex: '@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography}, DOI={10.1088/0268-1242/16/7/314}, journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }' chicago: Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” Semiconductor Science and Technology, 2002, 603–7. https://doi.org/10.1088/0268-1242/16/7/314. ieee: D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,” Semiconductor Science and Technology, pp. 603–607, 2002. mla: Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” Semiconductor Science and Technology, 2002, pp. 603–07, doi:10.1088/0268-1242/16/7/314. short: D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607. date_created: 2019-04-01T07:56:38Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1088/0268-1242/16/7/314 language: - iso: eng page: 603-607 publication: Semiconductor Science and Technology publication_identifier: issn: - 0268-1242 - 1361-6641 publication_status: published status: public title: Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography type: journal_article user_id: '42514' year: '2002' ...