---
_id: '8730'
author:
- first_name: G
  full_name: Apetrii, G
  last_name: Apetrii
- first_name: S F
  full_name: Fischer, S F
  last_name: Fischer
- first_name: U
  full_name: Kunze, U
  last_name: Kunze
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A D
  full_name: Wieck, A D
  last_name: Wieck
citation:
  ama: Apetrii G, Fischer SF, Kunze U, Reuter D, Wieck AD. Influence of processing
    parameters on the transport properties of quantum point contacts fabricated with
    an atomic force microscope. <i>Semiconductor Science and Technology</i>. 2003:735-739.
    doi:<a href="https://doi.org/10.1088/0268-1242/17/7/317">10.1088/0268-1242/17/7/317</a>
  apa: Apetrii, G., Fischer, S. F., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2003).
    Influence of processing parameters on the transport properties of quantum point
    contacts fabricated with an atomic force microscope. <i>Semiconductor Science
    and Technology</i>, 735–739. <a href="https://doi.org/10.1088/0268-1242/17/7/317">https://doi.org/10.1088/0268-1242/17/7/317</a>
  bibtex: '@article{Apetrii_Fischer_Kunze_Reuter_Wieck_2003, title={Influence of processing
    parameters on the transport properties of quantum point contacts fabricated with
    an atomic force microscope}, DOI={<a href="https://doi.org/10.1088/0268-1242/17/7/317">10.1088/0268-1242/17/7/317</a>},
    journal={Semiconductor Science and Technology}, author={Apetrii, G and Fischer,
    S F and Kunze, U and Reuter, Dirk and Wieck, A D}, year={2003}, pages={735–739}
    }'
  chicago: Apetrii, G, S F Fischer, U Kunze, Dirk Reuter, and A D Wieck. “Influence
    of Processing Parameters on the Transport Properties of Quantum Point Contacts
    Fabricated with an Atomic Force Microscope.” <i>Semiconductor Science and Technology</i>,
    2003, 735–39. <a href="https://doi.org/10.1088/0268-1242/17/7/317">https://doi.org/10.1088/0268-1242/17/7/317</a>.
  ieee: G. Apetrii, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Influence
    of processing parameters on the transport properties of quantum point contacts
    fabricated with an atomic force microscope,” <i>Semiconductor Science and Technology</i>,
    pp. 735–739, 2003.
  mla: Apetrii, G., et al. “Influence of Processing Parameters on the Transport Properties
    of Quantum Point Contacts Fabricated with an Atomic Force Microscope.” <i>Semiconductor
    Science and Technology</i>, 2003, pp. 735–39, doi:<a href="https://doi.org/10.1088/0268-1242/17/7/317">10.1088/0268-1242/17/7/317</a>.
  short: G. Apetrii, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor
    Science and Technology (2003) 735–739.
date_created: 2019-03-28T15:07:53Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/17/7/317
language:
- iso: eng
page: 735-739
publication: Semiconductor Science and Technology
publication_identifier:
  issn:
  - 0268-1242
publication_status: published
status: public
title: Influence of processing parameters on the transport properties of quantum point
  contacts fabricated with an atomic force microscope
type: journal_article
user_id: '42514'
year: '2003'
...
---
_id: '7684'
author:
- first_name: D
  full_name: Reuter, D
  last_name: Reuter
- first_name: Cedrik
  full_name: Meier, Cedrik
  id: '20798'
  last_name: Meier
  orcid: https://orcid.org/0000-0002-3787-3572
- first_name: C
  full_name: Riedesel, C
  last_name: Riedesel
- first_name: A D
  full_name: Wieck, A D
  last_name: Wieck
citation:
  ama: Reuter D, Meier C, Riedesel C, Wieck AD. Local two-dimensional electron gas
    formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures by focused Si-implantation
    doping. <i>Semiconductor Science and Technology</i>. 2002;17(6):585-589. doi:<a
    href="https://doi.org/10.1088/0268-1242/17/6/315">10.1088/0268-1242/17/6/315</a>
  apa: Reuter, D., Meier, C., Riedesel, C., &#38; Wieck, A. D. (2002). Local two-dimensional
    electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures
    by focused Si-implantation doping. <i>Semiconductor Science and Technology</i>,
    <i>17</i>(6), 585–589. <a href="https://doi.org/10.1088/0268-1242/17/6/315">https://doi.org/10.1088/0268-1242/17/6/315</a>
  bibtex: '@article{Reuter_Meier_Riedesel_Wieck_2002, title={Local two-dimensional
    electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures
    by focused Si-implantation doping}, volume={17}, DOI={<a href="https://doi.org/10.1088/0268-1242/17/6/315">10.1088/0268-1242/17/6/315</a>},
    number={6}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing},
    author={Reuter, D and Meier, Cedrik and Riedesel, C and Wieck, A D}, year={2002},
    pages={585–589} }'
  chicago: 'Reuter, D, Cedrik Meier, C Riedesel, and A D Wieck. “Local Two-Dimensional
    Electron Gas Formation in p-Doped GaAs/InyGa1 YAs/AlxGa1 XAs Heterostructures
    by Focused Si-Implantation Doping.” <i>Semiconductor Science and Technology</i>
    17, no. 6 (2002): 585–89. <a href="https://doi.org/10.1088/0268-1242/17/6/315">https://doi.org/10.1088/0268-1242/17/6/315</a>.'
  ieee: D. Reuter, C. Meier, C. Riedesel, and A. D. Wieck, “Local two-dimensional
    electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs heterostructures
    by focused Si-implantation doping,” <i>Semiconductor Science and Technology</i>,
    vol. 17, no. 6, pp. 585–589, 2002.
  mla: Reuter, D., et al. “Local Two-Dimensional Electron Gas Formation in p-Doped
    GaAs/InyGa1 YAs/AlxGa1 XAs Heterostructures by Focused Si-Implantation Doping.”
    <i>Semiconductor Science and Technology</i>, vol. 17, no. 6, IOP Publishing, 2002,
    pp. 585–89, doi:<a href="https://doi.org/10.1088/0268-1242/17/6/315">10.1088/0268-1242/17/6/315</a>.
  short: D. Reuter, C. Meier, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology
    17 (2002) 585–589.
date_created: 2019-02-13T14:52:18Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1088/0268-1242/17/6/315
extern: '1'
intvolume: '        17'
issue: '6'
language:
- iso: eng
page: 585-589
publication: Semiconductor Science and Technology
publication_identifier:
  issn:
  - 0268-1242
publication_status: published
publisher: IOP Publishing
status: public
title: Local two-dimensional electron gas formation in p-doped GaAs/InyGa1 yAs/AlxGa1 xAs
  heterostructures by focused Si-implantation doping
type: journal_article
user_id: '20798'
volume: 17
year: '2002'
...
---
_id: '8747'
author:
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: D
  full_name: Kähler, D
  last_name: Kähler
- first_name: U
  full_name: Kunze, U
  last_name: Kunze
- first_name: A D
  full_name: Wieck, A D
  last_name: Wieck
citation:
  ama: Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped
    AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. <i>Semiconductor
    Science and Technology</i>. 2002:603-607. doi:<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>
  apa: Reuter, D., Kähler, D., Kunze, U., &#38; Wieck, A. D. (2002). Layer-compensated
    selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography.
    <i>Semiconductor Science and Technology</i>, 603–607. <a href="https://doi.org/10.1088/0268-1242/16/7/314">https://doi.org/10.1088/0268-1242/16/7/314</a>
  bibtex: '@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively
    doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography},
    DOI={<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>},
    journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler,
    D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }'
  chicago: Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively
    Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.”
    <i>Semiconductor Science and Technology</i>, 2002, 603–7. <a href="https://doi.org/10.1088/0268-1242/16/7/314">https://doi.org/10.1088/0268-1242/16/7/314</a>.
  ieee: D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively
    doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,”
    <i>Semiconductor Science and Technology</i>, pp. 603–607, 2002.
  mla: Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures
    as a Base Material for Nanolithography.” <i>Semiconductor Science and Technology</i>,
    2002, pp. 603–07, doi:<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>.
  short: D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology
    (2002) 603–607.
date_created: 2019-03-29T11:24:11Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/16/7/314
language:
- iso: eng
page: 603-607
publication: Semiconductor Science and Technology
publication_identifier:
  issn:
  - 0268-1242
  - 1361-6641
publication_status: published
status: public
title: Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base
  material for nanolithography
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8768'
author:
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: D
  full_name: Kähler, D
  last_name: Kähler
- first_name: U
  full_name: Kunze, U
  last_name: Kunze
- first_name: A D
  full_name: Wieck, A D
  last_name: Wieck
citation:
  ama: Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped
    AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. <i>Semiconductor
    Science and Technology</i>. 2002:603-607. doi:<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>
  apa: Reuter, D., Kähler, D., Kunze, U., &#38; Wieck, A. D. (2002). Layer-compensated
    selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography.
    <i>Semiconductor Science and Technology</i>, 603–607. <a href="https://doi.org/10.1088/0268-1242/16/7/314">https://doi.org/10.1088/0268-1242/16/7/314</a>
  bibtex: '@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively
    doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography},
    DOI={<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>},
    journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler,
    D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }'
  chicago: Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively
    Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.”
    <i>Semiconductor Science and Technology</i>, 2002, 603–7. <a href="https://doi.org/10.1088/0268-1242/16/7/314">https://doi.org/10.1088/0268-1242/16/7/314</a>.
  ieee: D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively
    doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,”
    <i>Semiconductor Science and Technology</i>, pp. 603–607, 2002.
  mla: Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures
    as a Base Material for Nanolithography.” <i>Semiconductor Science and Technology</i>,
    2002, pp. 603–07, doi:<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>.
  short: D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology
    (2002) 603–607.
date_created: 2019-04-01T07:56:38Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/16/7/314
language:
- iso: eng
page: 603-607
publication: Semiconductor Science and Technology
publication_identifier:
  issn:
  - 0268-1242
  - 1361-6641
publication_status: published
status: public
title: Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base
  material for nanolithography
type: journal_article
user_id: '42514'
year: '2002'
...