@article{46132,
author = {{Littmann, Mario and Reuter, Dirk and As, Donat Josef}},
issn = {{0370-1972}},
journal = {{physica status solidi (b)}},
keywords = {{Condensed Matter Physics, Electronic, Optical and Magnetic Materials}},
number = {{7}},
publisher = {{Wiley}},
title = {{{Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy}}},
doi = {{10.1002/pssb.202300034}},
volume = {{260}},
year = {{2023}},
}
@article{35232,
author = {{Meier, Falco and Littmann, Mario and Bürger, Julius and Riedl, Thomas and Kool, Daniel and Lindner, Jörg and Reuter, Dirk and As, Donat Josef}},
issn = {{0370-1972}},
journal = {{physica status solidi (b)}},
keywords = {{Condensed Matter Physics, Electronic, Optical and Magnetic Materials}},
publisher = {{Wiley}},
title = {{{Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks}}},
doi = {{10.1002/pssb.202200508}},
year = {{2022}},
}
@article{54849,
abstract = {{The third‐order susceptibility of lithium niobate (LiNbO3) is calculated within a Berry‐phase formulation of the dynamical polarization based on the electronic structure obtained within density‐functional theory (DFT). Maximum values of the order of m V are calculated for photon energies between 1.2 and 2 eV, i.e., in the lower half of the optical bandgap of lithium niobate. Both free and bound electron (bi)polarons are found to lead to a remarkable enhancement of the third‐order susceptibility for photon energies below 1 eV.}},
author = {{Kozub, Agnieszka L. and Gerstmann, Uwe and Schmidt, Wolf Gero}},
issn = {{0370-1972}},
journal = {{physica status solidi (b)}},
number = {{2}},
publisher = {{Wiley}},
title = {{{Third‐Order Susceptibility of Lithium Niobate: Influence of Polarons and Bipolarons}}},
doi = {{10.1002/pssb.202200453}},
volume = {{260}},
year = {{2022}},
}
@article{37656,
author = {{Glahn, Luis Joel and Ruiz Alvarado, Isaac Azahel and Neufeld, Sergej and Zare Pour, Mohammad Amin and Paszuk, Agnieszka and Ostheimer, David and Shekarabi, Sahar and Romanyuk, Oleksandr and Moritz, Dominik Christian and Hofmann, Jan Philipp and Jaegermann, Wolfram and Hannappel, Thomas and Schmidt, Wolf Gero}},
issn = {{0370-1972}},
journal = {{physica status solidi (b)}},
keywords = {{Condensed Matter Physics, Electronic, Optical and Magnetic Materials}},
number = {{11}},
publisher = {{Wiley}},
title = {{{Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic Properties}}},
doi = {{10.1002/pssb.202200308}},
volume = {{259}},
year = {{2022}},
}
@article{40244,
author = {{Meier, Lukas and Schmidt, Wolf Gero}},
issn = {{0370-1972}},
journal = {{physica status solidi (b)}},
keywords = {{Condensed Matter Physics, Electronic, Optical and Magnetic Materials}},
number = {{1}},
publisher = {{Wiley}},
title = {{{GaInP/AlInP(001) Interfaces from Density Functional Theory}}},
doi = {{10.1002/pssb.202100462}},
volume = {{259}},
year = {{2021}},
}
@article{23840,
author = {{Baron, Elias and Goldhahn, Rüdiger and Deppe, Michael and As, Donat Josef and Feneberg, Martin}},
issn = {{0370-1972}},
journal = {{physica status solidi (b)}},
title = {{{Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN}}},
doi = {{10.1002/pssb.201900522}},
year = {{2020}},
}
@article{23841,
author = {{Deppe, Michael and Henksmeier, Tobias and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat Josef}},
issn = {{0370-1972}},
journal = {{physica status solidi (b)}},
title = {{{Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N}}},
doi = {{10.1002/pssb.201900532}},
year = {{2020}},
}
@article{40233,
author = {{Meier, Lukas and Braun, Christian and Hannappel, Thomas and Schmidt, Wolf Gero}},
issn = {{0370-1972}},
journal = {{physica status solidi (b)}},
keywords = {{Condensed Matter Physics, Electronic, Optical and Magnetic Materials}},
number = {{2}},
publisher = {{Wiley}},
title = {{{Band Alignment at Ga x In 1– x P/Al y In 1– y P Alloy Interfaces from Hybrid Density Functional Theory Calculations}}},
doi = {{10.1002/pssb.202000463}},
volume = {{258}},
year = {{2020}},
}
@article{15444,
author = {{Deppe, Michael and Henksmeier, Tobias and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat J.}},
issn = {{0370-1972}},
journal = {{physica status solidi (b)}},
title = {{{Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N}}},
doi = {{10.1002/pssb.201900532}},
year = {{2019}},
}
@article{7022,
author = {{Blumenthal, Sarah and Reuter, Dirk and As, Donat Josef}},
issn = {{0370-1972}},
journal = {{physica status solidi (b)}},
number = {{5}},
publisher = {{Wiley}},
title = {{{Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy}}},
doi = {{10.1002/pssb.201700457}},
volume = {{255}},
year = {{2018}},
}
@article{20588,
abstract = {{We have investigated the stacking of self-assembled cubic GaN quantum dots (QDs) grown in Stranski–Krastanov (SK) growth mode. The number of stacked layers is varied to compare their optical properties. The growth is in situ controlled by reflection high energy electron diffraction to prove the SK QD growth. Atomic force and transmission electron microscopy show the existence of wetting layer and QDs with a diameter of about 10 nm and a height of about 2 nm. The QDs have a truncated pyramidal form and are vertically aligned in growth direction. Photoluminescence measurements show an increase of the intensity with increasing number of stacked QD layers. Furthermore, a systematic blue-shift of 120 meV is observed with increasing number of stacked QD layers. This blueshift derives from a decrease in the QD height, because the QD height has also been the main confining dimension in our QDs.}},
author = {{Blumenthal, Sarah and Rieger, Torsten and Meertens, Doris and Pawlis, Alexander and Reuter, Dirk and As, Donat Josef}},
issn = {{0370-1972}},
journal = {{physica status solidi (b)}},
keywords = {{cubic crystals, GaN, molecular beam epitaxy, quantum dots}},
number = {{3}},
pages = {{1600729}},
title = {{{Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy}}},
doi = {{https://doi.org/10.1002/pssb.201600729}},
volume = {{255}},
year = {{2018}},
}
@article{17065,
author = {{Esser, Norbert and Schmidt, Wolf Gero}},
issn = {{0370-1972}},
journal = {{physica status solidi (b)}},
number = {{256}},
title = {{{Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution}}},
doi = {{10.1002/pssb.201800314}},
year = {{2018}},
}
@article{4808,
author = {{Wecker, Tobias and Callsen, Gordon and Hoffmann, Axel and Reuter, Dirk and As, Donat Josef}},
issn = {{0370-1972}},
journal = {{physica status solidi (b)}},
number = {{5}},
publisher = {{Wiley}},
title = {{{Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells}}},
doi = {{10.1002/pssb.201700373}},
volume = {{255}},
year = {{2017}},
}
@article{4811,
author = {{Deppe, Michael and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat Josef}},
issn = {{0370-1972}},
journal = {{physica status solidi (b)}},
number = {{8}},
publisher = {{Wiley}},
title = {{{Incorporation of germanium for n-type doping of cubic GaN}}},
doi = {{10.1002/pssb.201600700}},
volume = {{254}},
year = {{2017}},
}
@article{4240,
abstract = {{Cubic gallium nitride (GaN) films are analyzed with highresolution X-ray diffraction (HRXRD) and Raman spectroscopy. Several cubic GaN layers were grown on 3C-SiC (001) substrate by radio-frequency plasma-assisted molecular beam epitaxy. The layer thickness of the cubic GaN was varied between 75 and 505 nm. The HRXRD analysis reveals a reduction of the full-width at half-maximum (FWHM) of omega scans for growing layer thicknesses, which is caused by a partial compensation of defects. The Raman characterization confirms well-formed c-GaN layers. A more detailed examination of the longitudinal optical mode hints at a correlation of the FWHM of the Raman mode with the dislocation density, which shows the possibility to determine dislocation densities by Ramanspectroscopy on a micrometer scale, which is not possible by HRXRD. Furthermore, this Raman analysis shows that normalized Raman spectra present an alternative way to determine layer thicknesses of thin GaN films.}},
author = {{Rüsing, Michael and Wecker, T. and Berth, Gerhard and As, Donat Josef and Zrenner, Artur}},
issn = {{0370-1972}},
journal = {{physica status solidi (b)}},
keywords = {{cubic gallium nitride, dislocation density, HRXRD, Raman spectroscopy}},
number = {{4}},
pages = {{778--782}},
publisher = {{Wiley}},
title = {{{Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC}}},
doi = {{10.1002/pssb.201552592}},
volume = {{253}},
year = {{2016}},
}
@article{10025,
abstract = {{The phonon dispersions of the ferro‐ and paraelectric phase of LiTaO3 are calculated within density‐functional perturbation theory. The longitudinal optical phonon modes are theoretically derived and compared with available experimental data. Our results confirm the recent phonon assignment proposed by Margueron et al. [J. Appl. Phys. 111, 104105 (2012)] on the basis of spectroscopical studies. A comparison with the phonon band structure of the related material LiNbO3 shows minor differences that can be traced to the atomic‐mass difference between Ta and Nb. The presence of phonons with imaginary frequencies for the paraelectric phase suggests that it does not correspond to a minimum energy structure, and is compatible with an order‐disorder type phase transition.}},
author = {{Friedrich, Michael and Schindlmayr, Arno and Schmidt, Wolf Gero and Sanna, Simone}},
issn = {{1521-3951}},
journal = {{Physica Status Solidi B}},
number = {{4}},
pages = {{683--689}},
publisher = {{Wiley-VCH}},
title = {{{LiTaO3 phonon dispersion and ferroelectric transition calculated from first principles}}},
doi = {{10.1002/pssb.201552576}},
volume = {{253}},
year = {{2016}},
}
@article{22809,
author = {{Rai, Ashish K. and Gordon, Simon and Ludwig, Arne and Wieck, Andreas D. and Zrenner, Artur and Reuter, Dirk}},
issn = {{0370-1972}},
journal = {{physica status solidi (b)}},
pages = {{437--441}},
title = {{{Spatially indirect transitions in electric field tunable quantum dot diodes}}},
doi = {{10.1002/pssb.201552591}},
year = {{2015}},
}
@article{4276,
abstract = {{We analyse an InAs/GaAs-based electric field tunable single quantum dot diode with a thin tunnelling barrier between a
buried n þ -back contact and a quantum dot layer. In voltage- dependent photoluminescence measurements, we observe rich signatures from spatially direct and indirect transitions from the wetting layer and from a single quantum dot. By analysing the Stark effect, we show that the indirect transitions result from a recombination between confined holes in the wetting or quantum dot layer with electrons from the edge of the Fermi sea in the back contact. Using a 17 nm tunnel barrier which provides comparably weak tunnel coupling allowed us to observe clear signatures of direct and corresponding indirect lines for a series of neutral and positively charged quantum dot states.}},
author = {{Rai, Ashish K. and Gordon, Simon and Ludwig, Arne and Wieck, Andreas D. and Zrenner, Artur and Reuter, Dirk}},
issn = {{0370-1972}},
journal = {{physica status solidi (b)}},
keywords = {{excitons, GaAs, InAs, quantum dots, spatially indirect transitions, Stark shift}},
number = {{3}},
pages = {{437--441}},
publisher = {{Wiley}},
title = {{{Spatially indirect transitions in electric field tunable quantum dot diodes}}},
doi = {{10.1002/pssb.201552591}},
volume = {{253}},
year = {{2015}},
}
@article{4824,
author = {{Wecker, T. and Hörich, F. and Feneberg, M. and Goldhahn, R. and Reuter, Dirk and As, Donat Josef}},
issn = {{0370-1972}},
journal = {{physica status solidi (b)}},
number = {{5}},
pages = {{873--878}},
publisher = {{Wiley}},
title = {{{Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells}}},
doi = {{10.1002/pssb.201451531}},
volume = {{252}},
year = {{2014}},
}
@article{7229,
author = {{Shvarkov, Stepan and Ludwig, Astrid and Wieck, Andreas Dirk and Cordier, Yvon and Ney, Andreas and Hardtdegen, Hilde and Haab, Anna and Trampert, Achim and Ranchal, Rocío and Herfort, Jens and Becker, Hans-Werner and Rogalla, Detlef and Reuter, Dirk}},
issn = {{0370-1972}},
journal = {{physica status solidi (b)}},
number = {{9}},
pages = {{1673--1684}},
publisher = {{Wiley}},
title = {{{Magnetic properties of Gd-doped GaN}}},
doi = {{10.1002/pssb.201350205}},
volume = {{251}},
year = {{2014}},
}