@article{7229,
  author       = {{Shvarkov, Stepan and Ludwig, Astrid and Wieck, Andreas Dirk and Cordier, Yvon and Ney, Andreas and Hardtdegen, Hilde and Haab, Anna and Trampert, Achim and Ranchal, Rocío and Herfort, Jens and Becker, Hans-Werner and Rogalla, Detlef and Reuter, Dirk}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  number       = {{9}},
  pages        = {{1673--1684}},
  publisher    = {{Wiley}},
  title        = {{{Magnetic properties of Gd-doped GaN}}},
  doi          = {{10.1002/pssb.201350205}},
  volume       = {{251}},
  year         = {{2014}},
}

@article{7230,
  author       = {{Henn, Tobias and Kießling, Tobias and Molenkamp, Laurens W. and Reuter, Dirk and Wieck, Andreas D. and Biermann, Klaus and Santos, Paulo V. and Ossau, Wolfgang}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  number       = {{9}},
  pages        = {{1839--1849}},
  publisher    = {{Wiley}},
  title        = {{{Time and spatially resolved electron spin detection in semiconductor heterostructures by magneto-optical Kerr microscopy}}},
  doi          = {{10.1002/pssb.201350192}},
  volume       = {{251}},
  year         = {{2014}},
}

@article{7263,
  author       = {{Moody, Galan and Singh, Rohan and Li, Hebin and Akimov, Ilya A. and Bayer, Manfred and Reuter, Dirk and Wieck, Andreas D. and Bracker, Allan S. and Gammon, Daniel and Cundiff, Steven T.}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  number       = {{9}},
  pages        = {{1753--1759}},
  publisher    = {{Wiley}},
  title        = {{{Biexcitons in semiconductor quantum dot ensembles}}},
  doi          = {{10.1002/pssb.201200725}},
  volume       = {{250}},
  year         = {{2013}},
}

@article{13820,
  author       = {{Schmidt, Wolf Gero and Wippermann, S. and Sanna, S. and Babilon, M. and Vollmers, N. J. and Gerstmann, Uwe}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  number       = {{2}},
  pages        = {{343--359}},
  title        = {{{In-Si(111)(4 × 1)/(8 × 2) nanowires: Electron transport, entropy, and metal-insulator transition}}},
  doi          = {{10.1002/pssb.201100457}},
  volume       = {{249}},
  year         = {{2012}},
}

@article{62929,
  abstract     = {{<jats:title>Abstract</jats:title><jats:p>Two slightly different, efficient tight‐binding (TB) models for the description of the electronic properties of nitride‐based semiconductor quantum dots (QDs) have been developed and applied to the calculation of the electronic one‐particle spectrum of these structures. Using these one‐particle QD‐states, dipole and Coulomb matrix elements can be calculated, from which the optical properties of these systems can be obtained. These TB calculations have been performed for nitride‐based QDs with a cubic zincblende structure and those with a wurtzite crystal structure. In this paper, we discuss the general methodology used and the results obtained for the electronic one‐particle states and energies, for the dipole and Coulomb matrix elements, and for the excitonic optical emission and absorption spectra.</jats:p>}},
  author       = {{Schulz, S. and Mourad, D. and Schumacher, Stefan and Czycholl, G.}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  number       = {{8}},
  pages        = {{1853--1866}},
  publisher    = {{Wiley}},
  title        = {{{Tight‐binding model for the electronic and optical properties of nitride‐based quantum dots}}},
  doi          = {{10.1002/pssb.201147158}},
  volume       = {{248}},
  year         = {{2011}},
}

@article{4091,
  abstract     = {{We present a nonequilibrium ab initio method for calculating nonlinear and nonlocal optical effects in metallic slabs with a thickness of several nanometers. The numerical analysis is based on the full solution of the time‐dependent Kohn–Sham equations for a jellium system and allows to study the optical response of metal electrons subject to arbitrarily shaped intense light pulses. We find a strong localization of the generated second‐harmonic current in the surface regions of the slabs. }},
  author       = {{Wand, Mathias and Schindlmayr, Arno and Meier, Torsten and Förstner, Jens}},
  issn         = {{1521-3951}},
  journal      = {{Physica Status Solidi B}},
  keywords     = {{tet_topic_shg}},
  number       = {{4}},
  pages        = {{887--891}},
  publisher    = {{Wiley-VCH}},
  title        = {{{Simulation of the ultrafast nonlinear optical response of metal slabs}}},
  doi          = {{10.1002/pssb.201001219}},
  volume       = {{248}},
  year         = {{2011}},
}

@article{4210,
  abstract     = {{In this paper we demonstrate a strain-driven GaN interlayer method to reduce dislocation densities in GaN grown on (111) oriented silicon by metal organic vapour phase epitaxy (MOVPE). In order to achieve crack-free GaN layers of
reasonable thicknesses and dislocation densities it is crucial to integrate both dislocation reduction and strain management layers. In contrast to techniques like FACELO or nanoELO we show the in situ formation of GaN islands directly on the AlN nucleation layer without the need to deposit a SiO2 or SiNx mask. A graded AlGaN layer for strain management can be grown on top of this dislocation reducing 3D GaN inter-layer in order to achieve crack-free GaN layers grown on top of the AlGaN strain management layer. Furthermore, an additional SiNx layer for subsequent dislocation reduction can also be incorporated into the structure and is shown to efficiently reduce the dislocation density down to the low 10^9 cm^2. The structural properties of the 3D GaN island buffer layer and overgrown
samples are studied by means of SEM, cross-sectional, and plan view TEM. Cathodoluminiscence in an SEM is employed to correlate the dislocation microstructure as observed by plan view TEM with luminescent properties.}},
  author       = {{Häberlen, Maik and Zhu, Dandan and McAleese, Clifford and Zhu, Tongtong and Kappers, Menno J. and Humphreys, Colin J.}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  number       = {{7}},
  pages        = {{1753--1756}},
  publisher    = {{Wiley}},
  title        = {{{Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer}}},
  doi          = {{10.1002/pssb.200983537}},
  volume       = {{247}},
  year         = {{2010}},
}

@article{13835,
  author       = {{Scholle, A. and Greulich-Weber, S. and As, Donat Josef and Mietze, Ch. and Son, N. T. and Hemmingsson, C. and Monemar, B. and Janzén, E. and Gerstmann, Uwe and Sanna, S. and Rauls, E. and Schmidt, Wolf Gero}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  number       = {{7}},
  pages        = {{1728--1731}},
  title        = {{{Magnetic characterization of conductance electrons in GaN}}},
  doi          = {{10.1002/pssb.200983582}},
  volume       = {{247}},
  year         = {{2010}},
}

@article{13831,
  author       = {{Speiser, E. and Chandola, S. and Hinrichs, K. and Gensch, M. and Cobet, C. and Wippermann, S. and Schmidt, Wolf Gero and Bechstedt, F. and Richter, W. and Fleischer, K. and McGilp, J. F. and Esser, N.}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  number       = {{8}},
  pages        = {{2033--2039}},
  title        = {{{Metal-insulator transition in Si(111)-(4 × 1)/(8 × 2)-In studied by optical spectroscopy}}},
  doi          = {{10.1002/pssb.200983961}},
  volume       = {{247}},
  year         = {{2010}},
}

@article{8593,
  author       = {{Diaconescu, D. and Goldschmidt, A. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  pages        = {{276--283}},
  title        = {{{Quantum Hall effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples}}},
  doi          = {{10.1002/pssb.200743345}},
  year         = {{2008}},
}

@article{22611,
  author       = {{Rümmeli, M. H. and Schäffel, F. and de los Arcos de Pedro, Maria Teresa and Haberer, D. and Bachmatiuk, A. and Kramberger, C. and Ayala, P. and Borowiak-Palen, E. and Adebimpe, D. and Gemming, T. and Leonhardt, A. and Rellinghaus, B. and Schultz, L. and Pichler, T. and Büchner, B.}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  pages        = {{1939--1942}},
  title        = {{{On the graphitisation role of oxide supports in carbon nanotube CVD synthesis}}},
  doi          = {{10.1002/pssb.200879597}},
  year         = {{2008}},
}

@article{1752,
  author       = {{Nau, D. and Schönhardt, A. and Bauer, C. and Christ, A. and Zentgraf, Thomas and Kuhl, J. and Giessen, H.}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  number       = {{10}},
  pages        = {{2331--2343}},
  publisher    = {{Wiley-Blackwell}},
  title        = {{{Disorder issues in metallic photonic crystals}}},
  doi          = {{10.1002/pssb.200668054}},
  volume       = {{243}},
  year         = {{2006}},
}

@article{1753,
  author       = {{Christ, A. and Zentgraf, Thomas and Tikhodeev, S. G. and Gippius, N. A. and Martin, O. J. F. and Kuhl, J. and Giessen, H.}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  number       = {{10}},
  pages        = {{2344--2348}},
  publisher    = {{Wiley-Blackwell}},
  title        = {{{Interaction between localized and delocalized surface plasmon polariton modes in a metallic photonic crystal}}},
  doi          = {{10.1002/pssb.200668055}},
  volume       = {{243}},
  year         = {{2006}},
}

@article{8668,
  author       = {{Reuter, Dirk and Kailuweit, P. and Roescu, R. and Wieck, A. D. and Wibbelhoff, O. S. and Lorke, A. and Zeitler, U. and Maan, J. C.}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  pages        = {{3942--3945}},
  title        = {{{Hole and electron wave functions in self-assembled InAs quantum dots: a comparison}}},
  doi          = {{10.1002/pssb.200671520}},
  year         = {{2006}},
}

@article{8669,
  author       = {{Oulton, R. and Verbin, S. Yu. and Auer, T. and Cherbunin, R. V. and Greilich, A. and Yakovlev, D. R. and Bayer, M. and Reuter, Dirk and Wieck, A.}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  pages        = {{3922--3927}},
  title        = {{{Sub-second electron spin lifetimes in quantum dots at zero applied magnetic field due to alignment of QD nuclei}}},
  doi          = {{10.1002/pssb.200671529}},
  year         = {{2006}},
}

@article{29686,
  author       = {{Ehresmann, A. and Engel, D. and Weis, T. and Schindler, A. and Junk, D. and Schmalhorst, J. and Höink, V. and Sacher, Marc and Reiss, G.}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  keywords     = {{Condensed Matter Physics, Electronic, Optical and Magnetic Materials}},
  number       = {{1}},
  pages        = {{29--36}},
  publisher    = {{Wiley}},
  title        = {{{Fundamentals for magnetic patterning by ion bombardment of exchange bias layer systems}}},
  doi          = {{10.1002/pssb.200562442}},
  volume       = {{243}},
  year         = {{2006}},
}

@article{13699,
  author       = {{Hahn, P. H. and Seino, K. and Schmidt, Wolf Gero and Furthmüller, J. and Bechstedt, F.}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  number       = {{13}},
  pages        = {{2720--2728}},
  title        = {{{Quasiparticle and excitonic effects in the optical spectra of diamond, SiC, Si, GaP, GaAs, InP, and AlN}}},
  doi          = {{10.1002/pssb.200541128}},
  volume       = {{242}},
  year         = {{2005}},
}

@article{13700,
  author       = {{Esser, N. and Rakel, M. and Cobet, C. and Schmidt, Wolf Gero and Braun, W. and Cardona, M.}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  number       = {{13}},
  pages        = {{2601--2609}},
  title        = {{{VUV-ellipsometry on GaN: Probing conduction band properties by core level excitations}}},
  doi          = {{10.1002/pssb.200541315}},
  volume       = {{242}},
  year         = {{2005}},
}

@article{13698,
  author       = {{Schmidt, Wolf Gero}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  number       = {{13}},
  pages        = {{2751--2764}},
  title        = {{{Calculation of reflectance anisotropy for semiconductor surface exploration}}},
  doi          = {{10.1002/pssb.200541112}},
  volume       = {{242}},
  year         = {{2005}},
}

@article{4274,
  abstract     = {{We present a theory of the optical line shape of coherent intersubband transitions in a semiconductor
quantum well, considering non-Markovian LO-phonon scattering as major broadening mechanism. We
show that a quantum kinetic approach leads to additional polaron resonances and a resonance enhancement
for gap energies close to the phonon energy.}},
  author       = {{Butscher, S. and Förstner, Jens and Waldmüller, I. and Knorr, A.}},
  issn         = {{0370-1972}},
  journal      = {{physica status solidi (b)}},
  keywords     = {{tet_topic_qw}},
  number       = {{11}},
  pages        = {{R49--R51}},
  publisher    = {{Wiley}},
  title        = {{{Polaron signatures in the line shape of semiconductor ;intersubband transitions: quantum kinetics of the electron–phonon interaction}}},
  doi          = {{10.1002/pssb.200409053}},
  volume       = {{241}},
  year         = {{2004}},
}