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As, Physica Status Solidi (B) 255 (2018).","ieee":"S. Blumenthal, D. Reuter, and D. J. As, “Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy,” physica status solidi (b), vol. 255, no. 5, 2018.","chicago":"Blumenthal, Sarah, Dirk Reuter, and Donat Josef As. “Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.” Physica Status Solidi (B) 255, no. 5 (2018). https://doi.org/10.1002/pssb.201700457.","apa":"Blumenthal, S., Reuter, D., & As, D. J. (2018). Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. Physica Status Solidi (B), 255(5). https://doi.org/10.1002/pssb.201700457","ama":"Blumenthal S, Reuter D, As DJ. Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. physica status solidi (b). 2018;255(5). doi:10.1002/pssb.201700457","bibtex":"@article{Blumenthal_Reuter_As_2018, title={Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy}, volume={255}, DOI={10.1002/pssb.201700457}, number={51700457}, journal={physica status solidi (b)}, publisher={Wiley}, author={Blumenthal, Sarah and Reuter, Dirk and As, Donat Josef}, year={2018} }","mla":"Blumenthal, Sarah, et al. “Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.” Physica Status Solidi (B), vol. 255, no. 5, 1700457, Wiley, 2018, doi:10.1002/pssb.201700457."},"year":"2018","issue":"5","article_number":"1700457","intvolume":" 255","_id":"7022","status":"public","date_created":"2019-01-28T09:40:01Z","volume":255,"author":[{"first_name":"Sarah","full_name":"Blumenthal, Sarah","last_name":"Blumenthal"},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"first_name":"Donat Josef","orcid":"0000-0003-1121-3565","full_name":"As, Donat Josef","last_name":"As","id":"14"}],"publisher":"Wiley","publication":"physica status solidi (b)","user_id":"42514","language":[{"iso":"eng"}],"doi":"10.1002/pssb.201700457","date_updated":"2022-01-06T07:03:26Z","publication_identifier":{"issn":["0370-1972"]},"publication_status":"published","department":[{"_id":"15"},{"_id":"230"}],"title":"Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy"},{"title":"Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution","user_id":"14931","author":[{"last_name":"Esser","full_name":"Esser, Norbert","first_name":"Norbert"},{"id":"468","last_name":"Schmidt","full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero"}],"publication":"physica status solidi (b)","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"}],"publication_status":"published","publication_identifier":{"issn":["0370-1972","1521-3951"]},"status":"public","project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"},{"_id":"52","name":"PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing"},{"name":"TRR 142: TRR 142","_id":"53"},{"_id":"55","name":"TRR 142 - B: TRR 142 - Project Area B"},{"_id":"69","name":"TRR 142 - B4: TRR 142 - Subproject B4"}],"date_created":"2020-05-29T09:48:41Z","_id":"17065","date_updated":"2023-02-10T22:47:40Z","article_number":"1800314","doi":"10.1002/pssb.201800314","issue":"256","type":"journal_article","year":"2018","citation":{"mla":"Esser, Norbert, and Wolf Gero Schmidt. “Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution.” Physica Status Solidi (b), no. 256, 1800314, 2018, doi:10.1002/pssb.201800314.","bibtex":"@article{Esser_Schmidt_2018, title={Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution}, DOI={10.1002/pssb.201800314}, number={2561800314}, journal={physica status solidi (b)}, author={Esser, Norbert and Schmidt, Wolf Gero}, year={2018} }","ama":"Esser N, Schmidt WG. Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution. physica status solidi (b). 2018;(256). doi:10.1002/pssb.201800314","apa":"Esser, N., & Schmidt, W. G. (2018). Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution. Physica Status Solidi (b), 256, Article 1800314. https://doi.org/10.1002/pssb.201800314","chicago":"Esser, Norbert, and Wolf Gero Schmidt. “Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution.” Physica Status Solidi (b), no. 256 (2018). https://doi.org/10.1002/pssb.201800314.","ieee":"N. Esser and W. G. Schmidt, “Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution,” physica status solidi (b), no. 256, Art. no. 1800314, 2018, doi: 10.1002/pssb.201800314.","short":"N. Esser, W.G. Schmidt, Physica Status Solidi (b) (2018)."},"language":[{"iso":"eng"}]},{"title":"Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy","department":[{"_id":"230"},{"_id":"429"}],"publication_identifier":{"issn":["0370-1972"]},"publication_status":"published","project":[{"_id":"53","name":"TRR 142","grant_number":"231447078"},{"name":"TRR 142 - Project Area A","_id":"54"},{"_id":"63","grant_number":"231447078","name":"TRR 142 - Subproject A6"}],"date_updated":"2023-10-09T09:19:40Z","doi":"https://doi.org/10.1002/pssb.201600729","language":[{"iso":"eng"}],"article_type":"original","abstract":[{"text":"We have investigated the stacking of self-assembled cubic GaN quantum dots (QDs) grown in Stranski–Krastanov (SK) growth mode. The number of stacked layers is varied to compare their optical properties. The growth is in situ controlled by reflection high energy electron diffraction to prove the SK QD growth. Atomic force and transmission electron microscopy show the existence of wetting layer and QDs with a diameter of about 10 nm and a height of about 2 nm. The QDs have a truncated pyramidal form and are vertically aligned in growth direction. Photoluminescence measurements show an increase of the intensity with increasing number of stacked QD layers. Furthermore, a systematic blue-shift of 120 meV is observed with increasing number of stacked QD layers. This blueshift derives from a decrease in the QD height, because the QD height has also been the main confining dimension in our QDs.","lang":"eng"}],"user_id":"14931","author":[{"first_name":"Sarah","full_name":"Blumenthal, Sarah","last_name":"Blumenthal"},{"first_name":"Torsten","full_name":"Rieger, Torsten","last_name":"Rieger"},{"full_name":"Meertens, Doris","first_name":"Doris","last_name":"Meertens"},{"full_name":"Pawlis, Alexander","first_name":"Alexander","last_name":"Pawlis"},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"last_name":"As","id":"14","first_name":"Donat Josef","orcid":"0000-0003-1121-3565","full_name":"As, Donat Josef"}],"publication":"physica status solidi (b)","keyword":["cubic crystals","GaN","molecular beam epitaxy","quantum dots"],"volume":255,"status":"public","date_created":"2020-12-02T09:38:00Z","_id":"20588","intvolume":" 255","issue":"3","type":"journal_article","citation":{"short":"S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, D.J. As, Physica Status Solidi (b) 255 (2018) 1600729.","ieee":"S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, and D. J. As, “Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy,” physica status solidi (b), vol. 255, no. 3, p. 1600729, 2018, doi: https://doi.org/10.1002/pssb.201600729.","ama":"Blumenthal S, Rieger T, Meertens D, Pawlis A, Reuter D, As DJ. Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. physica status solidi (b). 2018;255(3):1600729. doi:https://doi.org/10.1002/pssb.201600729","apa":"Blumenthal, S., Rieger, T., Meertens, D., Pawlis, A., Reuter, D., & As, D. J. (2018). Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. Physica Status Solidi (b), 255(3), 1600729. https://doi.org/10.1002/pssb.201600729","chicago":"Blumenthal, Sarah, Torsten Rieger, Doris Meertens, Alexander Pawlis, Dirk Reuter, and Donat Josef As. “Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.” Physica Status Solidi (b) 255, no. 3 (2018): 1600729. https://doi.org/10.1002/pssb.201600729.","mla":"Blumenthal, Sarah, et al. “Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.” Physica Status Solidi (b), vol. 255, no. 3, 2018, p. 1600729, doi:https://doi.org/10.1002/pssb.201600729.","bibtex":"@article{Blumenthal_Rieger_Meertens_Pawlis_Reuter_As_2018, title={Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy}, volume={255}, DOI={https://doi.org/10.1002/pssb.201600729}, number={3}, journal={physica status solidi (b)}, author={Blumenthal, Sarah and Rieger, Torsten and Meertens, Doris and Pawlis, Alexander and Reuter, Dirk and As, Donat Josef}, year={2018}, pages={1600729} }"},"year":"2018","page":"1600729"},{"date_updated":"2022-01-06T07:01:24Z","_id":"4808","intvolume":" 255","doi":"10.1002/pssb.201700373","article_number":"1700373","issue":"5","type":"journal_article","citation":{"mla":"Wecker, Tobias, et al. “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells.” Physica Status Solidi (B), vol. 255, no. 5, 1700373, Wiley, 2017, doi:10.1002/pssb.201700373.","bibtex":"@article{Wecker_Callsen_Hoffmann_Reuter_As_2017, title={Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells}, volume={255}, DOI={10.1002/pssb.201700373}, number={51700373}, journal={physica status solidi (b)}, publisher={Wiley}, author={Wecker, Tobias and Callsen, Gordon and Hoffmann, Axel and Reuter, Dirk and As, Donat Josef}, year={2017} }","ama":"Wecker T, Callsen G, Hoffmann A, Reuter D, As DJ. Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells. physica status solidi (b). 2017;255(5). doi:10.1002/pssb.201700373","apa":"Wecker, T., Callsen, G., Hoffmann, A., Reuter, D., & As, D. J. (2017). Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells. Physica Status Solidi (B), 255(5). https://doi.org/10.1002/pssb.201700373","chicago":"Wecker, Tobias, Gordon Callsen, Axel Hoffmann, Dirk Reuter, and Donat Josef As. “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells.” Physica Status Solidi (B) 255, no. 5 (2017). https://doi.org/10.1002/pssb.201700373.","ieee":"T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, and D. J. As, “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells,” physica status solidi (b), vol. 255, no. 5, 2017.","short":"T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2017)."},"year":"2017","title":"Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells","user_id":"14","publication":"physica status solidi (b)","publisher":"Wiley","author":[{"full_name":"Wecker, Tobias","first_name":"Tobias","last_name":"Wecker"},{"last_name":"Callsen","first_name":"Gordon","full_name":"Callsen, Gordon"},{"last_name":"Hoffmann","full_name":"Hoffmann, Axel","first_name":"Axel"},{"id":"37763","last_name":"Reuter","full_name":"Reuter, Dirk","first_name":"Dirk"},{"full_name":"As, Donat Josef","orcid":"0000-0003-1121-3565","first_name":"Donat Josef","id":"14","last_name":"As"}],"volume":255,"publication_identifier":{"issn":["0370-1972"]},"publication_status":"published","date_created":"2018-10-24T07:59:23Z","status":"public"},{"publication":"physica status solidi (b)","publisher":"Wiley","author":[{"last_name":"Deppe","full_name":"Deppe, Michael","first_name":"Michael"},{"last_name":"Gerlach","first_name":"Jürgen W.","full_name":"Gerlach, Jürgen W."},{"id":"37763","last_name":"Reuter","full_name":"Reuter, Dirk","first_name":"Dirk"},{"full_name":"As, Donat Josef","orcid":"0000-0003-1121-3565","first_name":"Donat Josef","id":"14","last_name":"As"}],"volume":254,"publication_identifier":{"issn":["0370-1972"]},"publication_status":"published","date_created":"2018-10-24T08:02:51Z","status":"public","title":"Incorporation of germanium for n-type doping of cubic GaN","user_id":"14","year":"2017","type":"journal_article","citation":{"short":"M. Deppe, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) 254 (2017).","ieee":"M. Deppe, J. W. Gerlach, D. Reuter, and D. J. As, “Incorporation of germanium for n-type doping of cubic GaN,” physica status solidi (b), vol. 254, no. 8, 2017.","ama":"Deppe M, Gerlach JW, Reuter D, As DJ. Incorporation of germanium for n-type doping of cubic GaN. physica status solidi (b). 2017;254(8). doi:10.1002/pssb.201600700","apa":"Deppe, M., Gerlach, J. W., Reuter, D., & As, D. J. (2017). Incorporation of germanium for n-type doping of cubic GaN. Physica Status Solidi (B), 254(8). https://doi.org/10.1002/pssb.201600700","chicago":"Deppe, Michael, Jürgen W. Gerlach, Dirk Reuter, and Donat Josef As. “Incorporation of Germanium for N-Type Doping of Cubic GaN.” Physica Status Solidi (B) 254, no. 8 (2017). https://doi.org/10.1002/pssb.201600700.","mla":"Deppe, Michael, et al. “Incorporation of Germanium for N-Type Doping of Cubic GaN.” Physica Status Solidi (B), vol. 254, no. 8, 1600700, Wiley, 2017, doi:10.1002/pssb.201600700.","bibtex":"@article{Deppe_Gerlach_Reuter_As_2017, title={Incorporation of germanium for n-type doping of cubic GaN}, volume={254}, DOI={10.1002/pssb.201600700}, number={81600700}, journal={physica status solidi (b)}, publisher={Wiley}, author={Deppe, Michael and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat Josef}, year={2017} }"},"_id":"4811","date_updated":"2022-01-06T07:01:25Z","intvolume":" 254","doi":"10.1002/pssb.201600700","article_number":"1600700","issue":"8"},{"language":[{"iso":"eng"}],"doi":"10.1002/pssb.201552576","date_updated":"2022-01-06T06:50:26Z","publication_status":"published","publication_identifier":{"issn":["0370-1972"],"eissn":["1521-3951"]},"project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"},{"name":"TRR 142","_id":"53"},{"_id":"55","name":"TRR 142 - Project Area B"},{"name":"TRR 142 - Subproject B4","_id":"69"}],"department":[{"_id":"295"},{"_id":"296"},{"_id":"230"},{"_id":"429"}],"isi":"1","title":"LiTaO3 phonon dispersion and ferroelectric transition calculated from first principles","external_id":{"isi":["000374142500015"]},"page":"683-689","year":"2016","citation":{"mla":"Friedrich, Michael, et al. “LiTaO3 Phonon Dispersion and Ferroelectric Transition Calculated from First Principles.” Physica Status Solidi B, vol. 253, no. 4, Wiley-VCH, 2016, pp. 683–89, doi:10.1002/pssb.201552576.","bibtex":"@article{Friedrich_Schindlmayr_Schmidt_Sanna_2016, title={LiTaO3 phonon dispersion and ferroelectric transition calculated from first principles}, volume={253}, DOI={10.1002/pssb.201552576}, number={4}, journal={Physica Status Solidi B}, publisher={Wiley-VCH}, author={Friedrich, Michael and Schindlmayr, Arno and Schmidt, Wolf Gero and Sanna, Simone}, year={2016}, pages={683–689} }","apa":"Friedrich, M., Schindlmayr, A., Schmidt, W. G., & Sanna, S. (2016). LiTaO3 phonon dispersion and ferroelectric transition calculated from first principles. Physica Status Solidi B, 253(4), 683–689. https://doi.org/10.1002/pssb.201552576","ama":"Friedrich M, Schindlmayr A, Schmidt WG, Sanna S. LiTaO3 phonon dispersion and ferroelectric transition calculated from first principles. Physica Status Solidi B. 2016;253(4):683-689. doi:10.1002/pssb.201552576","chicago":"Friedrich, Michael, Arno Schindlmayr, Wolf Gero Schmidt, and Simone Sanna. “LiTaO3 Phonon Dispersion and Ferroelectric Transition Calculated from First Principles.” Physica Status Solidi B 253, no. 4 (2016): 683–89. https://doi.org/10.1002/pssb.201552576.","ieee":"M. Friedrich, A. Schindlmayr, W. G. Schmidt, and S. Sanna, “LiTaO3 phonon dispersion and ferroelectric transition calculated from first principles,” Physica Status Solidi B, vol. 253, no. 4, pp. 683–689, 2016.","short":"M. Friedrich, A. Schindlmayr, W.G. Schmidt, S. Sanna, Physica Status Solidi B 253 (2016) 683–689."},"type":"journal_article","issue":"4","intvolume":" 253","_id":"10025","volume":253,"date_created":"2019-05-29T07:52:52Z","status":"public","has_accepted_license":"1","publication":"Physica Status Solidi B","file_date_updated":"2020-08-30T14:41:39Z","publisher":"Wiley-VCH","author":[{"last_name":"Friedrich","first_name":"Michael","full_name":"Friedrich, Michael"},{"first_name":"Arno","orcid":"0000-0002-4855-071X","full_name":"Schindlmayr, Arno","last_name":"Schindlmayr","id":"458"},{"id":"468","last_name":"Schmidt","orcid":"0000-0002-2717-5076","full_name":"Schmidt, Wolf Gero","first_name":"Wolf Gero"},{"last_name":"Sanna","first_name":"Simone","full_name":"Sanna, Simone"}],"quality_controlled":"1","file":[{"description":"© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim","relation":"main_file","date_updated":"2020-08-30T14:41:39Z","content_type":"application/pdf","file_id":"18577","creator":"schindlm","title":"LiTaO3 phonon dispersion and ferroelectric transition calculated from first principles","file_size":402594,"access_level":"closed","file_name":"pssb.201552576.pdf","date_created":"2020-08-28T14:22:11Z"}],"ddc":["530"],"user_id":"458","abstract":[{"text":"The phonon dispersions of the ferro‐ and paraelectric phase of LiTaO3 are calculated within density‐functional perturbation theory. The longitudinal optical phonon modes are theoretically derived and compared with available experimental data. Our results confirm the recent phonon assignment proposed by Margueron et al. [J. Appl. Phys. 111, 104105 (2012)] on the basis of spectroscopical studies. A comparison with the phonon band structure of the related material LiNbO3 shows minor differences that can be traced to the atomic‐mass difference between Ta and Nb. The presence of phonons with imaginary frequencies for the paraelectric phase suggests that it does not correspond to a minimum energy structure, and is compatible with an order‐disorder type phase transition.","lang":"eng"}],"article_type":"original"},{"title":"Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"project":[{"grant_number":"231447078","name":"TRR 142","_id":"53"},{"_id":"55","name":"TRR 142 - Project Area B"},{"_id":"68","name":"TRR 142 - Subproject B3","grant_number":"231447078"}],"publication_identifier":{"issn":["0370-1972"]},"publication_status":"published","date_updated":"2023-10-09T08:48:35Z","doi":"10.1002/pssb.201552592","language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"Cubic gallium nitride (GaN) films are analyzed with highresolution X-ray diffraction (HRXRD) and Raman spectroscopy. Several cubic GaN layers were grown on 3C-SiC (001) substrate by radio-frequency plasma-assisted molecular beam epitaxy. The layer thickness of the cubic GaN was varied between 75 and 505 nm. The HRXRD analysis reveals a reduction of the full-width at half-maximum (FWHM) of omega scans for growing layer thicknesses, which is caused by a partial compensation of defects. The Raman characterization confirms well-formed c-GaN layers. A more detailed examination of the longitudinal optical mode hints at a correlation of the FWHM of the Raman mode with the dislocation density, which shows the possibility to determine dislocation densities by Ramanspectroscopy on a micrometer scale, which is not possible by HRXRD. Furthermore, this Raman analysis shows that normalized Raman spectra present an alternative way to determine layer thicknesses of thin GaN films."}],"article_type":"original","user_id":"14931","publication":"physica status solidi (b)","keyword":["cubic gallium nitride","dislocation density","HRXRD","Raman spectroscopy"],"publisher":"Wiley","author":[{"id":"22501","last_name":"Rüsing","orcid":"0000-0003-4682-4577","full_name":"Rüsing, Michael","first_name":"Michael"},{"last_name":"Wecker","first_name":"T.","full_name":"Wecker, T."},{"full_name":"Berth, Gerhard","first_name":"Gerhard","id":"53","last_name":"Berth"},{"last_name":"As","id":"14","first_name":"Donat Josef","orcid":"0000-0003-1121-3565","full_name":"As, Donat Josef"},{"orcid":"0000-0002-5190-0944","full_name":"Zrenner, Artur","first_name":"Artur","id":"606","last_name":"Zrenner"}],"date_created":"2018-08-29T08:24:01Z","status":"public","volume":253,"_id":"4240","intvolume":" 253","issue":"4","page":"778-782","type":"journal_article","year":"2016","citation":{"ieee":"M. Rüsing, T. Wecker, G. Berth, D. J. As, and A. Zrenner, “Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC,” physica status solidi (b), vol. 253, no. 4, pp. 778–782, 2016, doi: 10.1002/pssb.201552592.","short":"M. Rüsing, T. Wecker, G. Berth, D.J. As, A. Zrenner, Physica Status Solidi (b) 253 (2016) 778–782.","mla":"Rüsing, Michael, et al. “Joint Raman Spectroscopy and HRXRD Investigation of Cubic Gallium Nitride Layers Grown on 3C-SiC.” Physica Status Solidi (b), vol. 253, no. 4, Wiley, 2016, pp. 778–82, doi:10.1002/pssb.201552592.","bibtex":"@article{Rüsing_Wecker_Berth_As_Zrenner_2016, title={Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC}, volume={253}, DOI={10.1002/pssb.201552592}, number={4}, journal={physica status solidi (b)}, publisher={Wiley}, author={Rüsing, Michael and Wecker, T. and Berth, Gerhard and As, Donat Josef and Zrenner, Artur}, year={2016}, pages={778–782} }","ama":"Rüsing M, Wecker T, Berth G, As DJ, Zrenner A. Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC. physica status solidi (b). 2016;253(4):778-782. doi:10.1002/pssb.201552592","apa":"Rüsing, M., Wecker, T., Berth, G., As, D. J., & Zrenner, A. (2016). Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC. Physica Status Solidi (b), 253(4), 778–782. https://doi.org/10.1002/pssb.201552592","chicago":"Rüsing, Michael, T. Wecker, Gerhard Berth, Donat Josef As, and Artur Zrenner. “Joint Raman Spectroscopy and HRXRD Investigation of Cubic Gallium Nitride Layers Grown on 3C-SiC.” Physica Status Solidi (b) 253, no. 4 (2016): 778–82. https://doi.org/10.1002/pssb.201552592."}},{"page":"437-441","citation":{"short":"A.K. Rai, S. Gordon, A. Ludwig, A.D. Wieck, A. Zrenner, D. Reuter, Physica Status Solidi (B) (2015) 437–441.","ieee":"A. K. Rai, S. Gordon, A. Ludwig, A. D. Wieck, A. Zrenner, and D. Reuter, “Spatially indirect transitions in electric field tunable quantum dot diodes,” physica status solidi (b), pp. 437–441, 2015.","apa":"Rai, A. K., Gordon, S., Ludwig, A., Wieck, A. D., Zrenner, A., & Reuter, D. (2015). Spatially indirect transitions in electric field tunable quantum dot diodes. Physica Status Solidi (B), 437–441. https://doi.org/10.1002/pssb.201552591","ama":"Rai AK, Gordon S, Ludwig A, Wieck AD, Zrenner A, Reuter D. Spatially indirect transitions in electric field tunable quantum dot diodes. physica status solidi (b). 2015:437-441. doi:10.1002/pssb.201552591","chicago":"Rai, Ashish K., Simon Gordon, Arne Ludwig, Andreas D. Wieck, Artur Zrenner, and Dirk Reuter. “Spatially Indirect Transitions in Electric Field Tunable Quantum Dot Diodes.” Physica Status Solidi (B), 2015, 437–41. https://doi.org/10.1002/pssb.201552591.","mla":"Rai, Ashish K., et al. “Spatially Indirect Transitions in Electric Field Tunable Quantum Dot Diodes.” Physica Status Solidi (B), 2015, pp. 437–41, doi:10.1002/pssb.201552591.","bibtex":"@article{Rai_Gordon_Ludwig_Wieck_Zrenner_Reuter_2015, title={Spatially indirect transitions in electric field tunable quantum dot diodes}, DOI={10.1002/pssb.201552591}, journal={physica status solidi (b)}, author={Rai, Ashish K. and Gordon, Simon and Ludwig, Arne and Wieck, Andreas D. and Zrenner, Artur and Reuter, Dirk}, year={2015}, pages={437–441} }"},"year":"2015","type":"journal_article","language":[{"iso":"eng"}],"date_updated":"2022-01-06T06:55:42Z","_id":"22809","doi":"10.1002/pssb.201552591","department":[{"_id":"15"},{"_id":"230"}],"publication":"physica status solidi (b)","author":[{"first_name":"Ashish K.","full_name":"Rai, Ashish K.","last_name":"Rai"},{"full_name":"Gordon, Simon","first_name":"Simon","last_name":"Gordon"},{"full_name":"Ludwig, Arne","first_name":"Arne","last_name":"Ludwig"},{"last_name":"Wieck","first_name":"Andreas D.","full_name":"Wieck, Andreas D."},{"orcid":"0000-0002-5190-0944","full_name":"Zrenner, Artur","first_name":"Artur","id":"606","last_name":"Zrenner"},{"last_name":"Reuter","full_name":"Reuter, Dirk","first_name":"Dirk"}],"publication_status":"published","publication_identifier":{"issn":["0370-1972"]},"date_created":"2021-07-26T05:54:56Z","status":"public","title":"Spatially indirect transitions in electric field tunable quantum dot diodes","user_id":"606"},{"title":"Spatially indirect transitions in electric field tunable quantum dot diodes","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"publication_identifier":{"issn":["0370-1972"]},"publication_status":"published","date_updated":"2022-01-06T07:00:46Z","doi":"10.1002/pssb.201552591","language":[{"iso":"eng"}],"article_type":"original","abstract":[{"text":"We analyse an InAs/GaAs-based electric field tunable single quantum dot diode with a thin tunnelling barrier between a\r\nburied n þ -back contact and a quantum dot layer. In voltage- dependent photoluminescence measurements, we observe rich signatures from spatially direct and indirect transitions from the wetting layer and from a single quantum dot. By analysing the Stark effect, we show that the indirect transitions result from a recombination between confined holes in the wetting or quantum dot layer with electrons from the edge of the Fermi sea in the back contact. Using a 17 nm tunnel barrier which provides comparably weak tunnel coupling allowed us to observe clear signatures of direct and corresponding indirect lines for a series of neutral and positively charged quantum dot states.","lang":"eng"}],"user_id":"42514","author":[{"full_name":"Rai, Ashish K.","first_name":"Ashish K.","last_name":"Rai"},{"last_name":"Gordon","full_name":"Gordon, Simon","first_name":"Simon"},{"last_name":"Ludwig","full_name":"Ludwig, Arne","first_name":"Arne"},{"first_name":"Andreas D.","full_name":"Wieck, Andreas D.","last_name":"Wieck"},{"id":"606","last_name":"Zrenner","orcid":"0000-0002-5190-0944","full_name":"Zrenner, Artur","first_name":"Artur"},{"last_name":"Reuter","id":"37763","first_name":"Dirk","full_name":"Reuter, Dirk"}],"publisher":"Wiley","publication":"physica status solidi (b)","keyword":["excitons","GaAs","InAs","quantum dots","spatially indirect transitions","Stark shift"],"status":"public","date_created":"2018-08-29T10:03:56Z","volume":253,"intvolume":" 253","_id":"4276","issue":"3","year":"2015","type":"journal_article","citation":{"short":"A.K. Rai, S. Gordon, A. Ludwig, A.D. Wieck, A. Zrenner, D. Reuter, Physica Status Solidi (B) 253 (2015) 437–441.","ieee":"A. K. Rai, S. Gordon, A. Ludwig, A. D. Wieck, A. Zrenner, and D. Reuter, “Spatially indirect transitions in electric field tunable quantum dot diodes,” physica status solidi (b), vol. 253, no. 3, pp. 437–441, 2015.","apa":"Rai, A. K., Gordon, S., Ludwig, A., Wieck, A. D., Zrenner, A., & Reuter, D. (2015). Spatially indirect transitions in electric field tunable quantum dot diodes. Physica Status Solidi (B), 253(3), 437–441. https://doi.org/10.1002/pssb.201552591","ama":"Rai AK, Gordon S, Ludwig A, Wieck AD, Zrenner A, Reuter D. Spatially indirect transitions in electric field tunable quantum dot diodes. physica status solidi (b). 2015;253(3):437-441. doi:10.1002/pssb.201552591","chicago":"Rai, Ashish K., Simon Gordon, Arne Ludwig, Andreas D. Wieck, Artur Zrenner, and Dirk Reuter. “Spatially Indirect Transitions in Electric Field Tunable Quantum Dot Diodes.” Physica Status Solidi (B) 253, no. 3 (2015): 437–41. https://doi.org/10.1002/pssb.201552591.","bibtex":"@article{Rai_Gordon_Ludwig_Wieck_Zrenner_Reuter_2015, title={Spatially indirect transitions in electric field tunable quantum dot diodes}, volume={253}, DOI={10.1002/pssb.201552591}, number={3}, journal={physica status solidi (b)}, publisher={Wiley}, author={Rai, Ashish K. and Gordon, Simon and Ludwig, Arne and Wieck, Andreas D. and Zrenner, Artur and Reuter, Dirk}, year={2015}, pages={437–441} }","mla":"Rai, Ashish K., et al. “Spatially Indirect Transitions in Electric Field Tunable Quantum Dot Diodes.” Physica Status Solidi (B), vol. 253, no. 3, Wiley, 2015, pp. 437–41, doi:10.1002/pssb.201552591."},"page":"437-441"},{"language":[{"iso":"eng"}],"type":"journal_article","year":"2014","citation":{"chicago":"Wecker, T., F. Hörich, M. Feneberg, R. Goldhahn, Dirk Reuter, and Donat Josef As. “Structural and Optical Properties of MBE-Grown Asymmetric Cubic GaN/AlxGa1-XN Double Quantum Wells.” Physica Status Solidi (B) 252, no. 5 (2014): 873–78. https://doi.org/10.1002/pssb.201451531.","apa":"Wecker, T., Hörich, F., Feneberg, M., Goldhahn, R., Reuter, D., & As, D. J. (2014). Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells. Physica Status Solidi (B), 252(5), 873–878. https://doi.org/10.1002/pssb.201451531","ama":"Wecker T, Hörich F, Feneberg M, Goldhahn R, Reuter D, As DJ. Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells. physica status solidi (b). 2014;252(5):873-878. doi:10.1002/pssb.201451531","mla":"Wecker, T., et al. “Structural and Optical Properties of MBE-Grown Asymmetric Cubic GaN/AlxGa1-XN Double Quantum Wells.” Physica Status Solidi (B), vol. 252, no. 5, Wiley, 2014, pp. 873–78, doi:10.1002/pssb.201451531.","bibtex":"@article{Wecker_Hörich_Feneberg_Goldhahn_Reuter_As_2014, title={Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells}, volume={252}, DOI={10.1002/pssb.201451531}, number={5}, journal={physica status solidi (b)}, publisher={Wiley}, author={Wecker, T. and Hörich, F. and Feneberg, M. and Goldhahn, R. and Reuter, Dirk and As, Donat Josef}, year={2014}, pages={873–878} }","short":"T. Wecker, F. Hörich, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, Physica Status Solidi (B) 252 (2014) 873–878.","ieee":"T. Wecker, F. Hörich, M. Feneberg, R. Goldhahn, D. Reuter, and D. J. As, “Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells,” physica status solidi (b), vol. 252, no. 5, pp. 873–878, 2014."},"page":"873-878","issue":"5","doi":"10.1002/pssb.201451531","_id":"4824","date_updated":"2022-01-06T07:01:25Z","intvolume":" 252","status":"public","date_created":"2018-10-24T08:59:33Z","publication_status":"published","publication_identifier":{"issn":["0370-1972"]},"volume":252,"publisher":"Wiley","author":[{"first_name":"T.","full_name":"Wecker, T.","last_name":"Wecker"},{"last_name":"Hörich","full_name":"Hörich, F.","first_name":"F."},{"last_name":"Feneberg","first_name":"M.","full_name":"Feneberg, M."},{"full_name":"Goldhahn, R.","first_name":"R.","last_name":"Goldhahn"},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"last_name":"As","id":"14","first_name":"Donat Josef","orcid":"0000-0003-1121-3565","full_name":"As, Donat Josef"}],"publication":"physica status solidi (b)","user_id":"42514","title":"Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells"},{"publication_status":"published","publication_identifier":{"issn":["0370-1972"]},"department":[{"_id":"15"},{"_id":"230"}],"title":"Magnetic properties of Gd-doped GaN","language":[{"iso":"eng"}],"doi":"10.1002/pssb.201350205","date_updated":"2022-01-06T07:03:29Z","volume":251,"date_created":"2019-01-29T12:31:44Z","status":"public","publication":"physica status solidi (b)","author":[{"last_name":"Shvarkov","first_name":"Stepan","full_name":"Shvarkov, Stepan"},{"first_name":"Astrid","full_name":"Ludwig, Astrid","last_name":"Ludwig"},{"last_name":"Wieck","full_name":"Wieck, Andreas Dirk","first_name":"Andreas Dirk"},{"full_name":"Cordier, Yvon","first_name":"Yvon","last_name":"Cordier"},{"last_name":"Ney","first_name":"Andreas","full_name":"Ney, Andreas"},{"last_name":"Hardtdegen","first_name":"Hilde","full_name":"Hardtdegen, Hilde"},{"full_name":"Haab, Anna","first_name":"Anna","last_name":"Haab"},{"full_name":"Trampert, Achim","first_name":"Achim","last_name":"Trampert"},{"full_name":"Ranchal, Rocío","first_name":"Rocío","last_name":"Ranchal"},{"full_name":"Herfort, Jens","first_name":"Jens","last_name":"Herfort"},{"last_name":"Becker","first_name":"Hans-Werner","full_name":"Becker, Hans-Werner"},{"first_name":"Detlef","full_name":"Rogalla, Detlef","last_name":"Rogalla"},{"id":"37763","last_name":"Reuter","full_name":"Reuter, Dirk","first_name":"Dirk"}],"publisher":"Wiley","user_id":"42514","page":"1673-1684","type":"journal_article","citation":{"ieee":"S. Shvarkov et al., “Magnetic properties of Gd-doped GaN,” physica status solidi (b), vol. 251, no. 9, pp. 1673–1684, 2014.","short":"S. Shvarkov, A. Ludwig, A.D. Wieck, Y. Cordier, A. Ney, H. Hardtdegen, A. Haab, A. Trampert, R. Ranchal, J. Herfort, H.-W. Becker, D. Rogalla, D. Reuter, Physica Status Solidi (B) 251 (2014) 1673–1684.","bibtex":"@article{Shvarkov_Ludwig_Wieck_Cordier_Ney_Hardtdegen_Haab_Trampert_Ranchal_Herfort_et al._2014, title={Magnetic properties of Gd-doped GaN}, volume={251}, DOI={10.1002/pssb.201350205}, number={9}, journal={physica status solidi (b)}, publisher={Wiley}, author={Shvarkov, Stepan and Ludwig, Astrid and Wieck, Andreas Dirk and Cordier, Yvon and Ney, Andreas and Hardtdegen, Hilde and Haab, Anna and Trampert, Achim and Ranchal, Rocío and Herfort, Jens and et al.}, year={2014}, pages={1673–1684} }","mla":"Shvarkov, Stepan, et al. “Magnetic Properties of Gd-Doped GaN.” Physica Status Solidi (B), vol. 251, no. 9, Wiley, 2014, pp. 1673–84, doi:10.1002/pssb.201350205.","ama":"Shvarkov S, Ludwig A, Wieck AD, et al. Magnetic properties of Gd-doped GaN. physica status solidi (b). 2014;251(9):1673-1684. doi:10.1002/pssb.201350205","apa":"Shvarkov, S., Ludwig, A., Wieck, A. D., Cordier, Y., Ney, A., Hardtdegen, H., … Reuter, D. (2014). Magnetic properties of Gd-doped GaN. Physica Status Solidi (B), 251(9), 1673–1684. https://doi.org/10.1002/pssb.201350205","chicago":"Shvarkov, Stepan, Astrid Ludwig, Andreas Dirk Wieck, Yvon Cordier, Andreas Ney, Hilde Hardtdegen, Anna Haab, et al. “Magnetic Properties of Gd-Doped GaN.” Physica Status Solidi (B) 251, no. 9 (2014): 1673–84. https://doi.org/10.1002/pssb.201350205."},"year":"2014","issue":"9","_id":"7229","intvolume":" 251"},{"department":[{"_id":"15"},{"_id":"230"}],"publication_status":"published","publication_identifier":{"issn":["0370-1972"]},"title":"Time and spatially resolved electron spin detection in semiconductor heterostructures by magneto-optical Kerr microscopy","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:30Z","doi":"10.1002/pssb.201350192","publication":"physica status solidi (b)","author":[{"full_name":"Henn, Tobias","first_name":"Tobias","last_name":"Henn"},{"last_name":"Kießling","full_name":"Kießling, Tobias","first_name":"Tobias"},{"full_name":"Molenkamp, Laurens W.","first_name":"Laurens W.","last_name":"Molenkamp"},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"last_name":"Wieck","full_name":"Wieck, Andreas D.","first_name":"Andreas D."},{"last_name":"Biermann","full_name":"Biermann, Klaus","first_name":"Klaus"},{"first_name":"Paulo V.","full_name":"Santos, Paulo V.","last_name":"Santos"},{"last_name":"Ossau","first_name":"Wolfgang","full_name":"Ossau, Wolfgang"}],"publisher":"Wiley","date_created":"2019-01-29T12:33:42Z","status":"public","volume":251,"user_id":"42514","page":"1839-1849","type":"journal_article","citation":{"ieee":"T. Henn et al., “Time and spatially resolved electron spin detection in semiconductor heterostructures by magneto-optical Kerr microscopy,” physica status solidi (b), vol. 251, no. 9, pp. 1839–1849, 2014.","short":"T. Henn, T. Kießling, L.W. Molenkamp, D. Reuter, A.D. Wieck, K. Biermann, P.V. Santos, W. Ossau, Physica Status Solidi (B) 251 (2014) 1839–1849.","mla":"Henn, Tobias, et al. “Time and Spatially Resolved Electron Spin Detection in Semiconductor Heterostructures by Magneto-Optical Kerr Microscopy.” Physica Status Solidi (B), vol. 251, no. 9, Wiley, 2014, pp. 1839–49, doi:10.1002/pssb.201350192.","bibtex":"@article{Henn_Kießling_Molenkamp_Reuter_Wieck_Biermann_Santos_Ossau_2014, title={Time and spatially resolved electron spin detection in semiconductor heterostructures by magneto-optical Kerr microscopy}, volume={251}, DOI={10.1002/pssb.201350192}, number={9}, journal={physica status solidi (b)}, publisher={Wiley}, author={Henn, Tobias and Kießling, Tobias and Molenkamp, Laurens W. and Reuter, Dirk and Wieck, Andreas D. and Biermann, Klaus and Santos, Paulo V. and Ossau, Wolfgang}, year={2014}, pages={1839–1849} }","ama":"Henn T, Kießling T, Molenkamp LW, et al. Time and spatially resolved electron spin detection in semiconductor heterostructures by magneto-optical Kerr microscopy. physica status solidi (b). 2014;251(9):1839-1849. doi:10.1002/pssb.201350192","apa":"Henn, T., Kießling, T., Molenkamp, L. W., Reuter, D., Wieck, A. D., Biermann, K., … Ossau, W. (2014). Time and spatially resolved electron spin detection in semiconductor heterostructures by magneto-optical Kerr microscopy. Physica Status Solidi (B), 251(9), 1839–1849. https://doi.org/10.1002/pssb.201350192","chicago":"Henn, Tobias, Tobias Kießling, Laurens W. Molenkamp, Dirk Reuter, Andreas D. Wieck, Klaus Biermann, Paulo V. Santos, and Wolfgang Ossau. “Time and Spatially Resolved Electron Spin Detection in Semiconductor Heterostructures by Magneto-Optical Kerr Microscopy.” Physica Status Solidi (B) 251, no. 9 (2014): 1839–49. https://doi.org/10.1002/pssb.201350192."},"year":"2014","intvolume":" 251","_id":"7230","issue":"9"}]