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Shvarkov, A. Ludwig, A.D. Wieck, Y. Cordier, A. Ney, H. Hardtdegen, A. Haab, A. Trampert, R. Ranchal, J. Herfort, H.-W. Becker, D. Rogalla, D. Reuter, Physica Status Solidi (B) 251 (2014) 1673–1684.","chicago":"Shvarkov, Stepan, Astrid Ludwig, Andreas Dirk Wieck, Yvon Cordier, Andreas Ney, Hilde Hardtdegen, Anna Haab, et al. “Magnetic Properties of Gd-Doped GaN.” <i>Physica Status Solidi (B)</i> 251, no. 9 (2014): 1673–84. <a href=\"https://doi.org/10.1002/pssb.201350205\">https://doi.org/10.1002/pssb.201350205</a>.","apa":"Shvarkov, S., Ludwig, A., Wieck, A. D., Cordier, Y., Ney, A., Hardtdegen, H., … Reuter, D. (2014). Magnetic properties of Gd-doped GaN. <i>Physica Status Solidi (B)</i>, <i>251</i>(9), 1673–1684. <a href=\"https://doi.org/10.1002/pssb.201350205\">https://doi.org/10.1002/pssb.201350205</a>","ieee":"S. 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Magnetic properties of Gd-doped GaN. <i>physica status solidi (b)</i>. 2014;251(9):1673-1684. doi:<a href=\"https://doi.org/10.1002/pssb.201350205\">10.1002/pssb.201350205</a>","bibtex":"@article{Shvarkov_Ludwig_Wieck_Cordier_Ney_Hardtdegen_Haab_Trampert_Ranchal_Herfort_et al._2014, title={Magnetic properties of Gd-doped GaN}, volume={251}, DOI={<a href=\"https://doi.org/10.1002/pssb.201350205\">10.1002/pssb.201350205</a>}, number={9}, journal={physica status solidi (b)}, publisher={Wiley}, author={Shvarkov, Stepan and Ludwig, Astrid and Wieck, Andreas Dirk and Cordier, Yvon and Ney, Andreas and Hardtdegen, Hilde and Haab, Anna and Trampert, Achim and Ranchal, Rocío and Herfort, Jens and et al.}, year={2014}, pages={1673–1684} }","mla":"Shvarkov, Stepan, et al. “Magnetic Properties of Gd-Doped GaN.” <i>Physica Status Solidi (B)</i>, vol. 251, no. 9, Wiley, 2014, pp. 1673–84, doi:<a href=\"https://doi.org/10.1002/pssb.201350205\">10.1002/pssb.201350205</a>."},"volume":251,"user_id":"42514","publisher":"Wiley","_id":"7229","page":"1673-1684","status":"public"},{"citation":{"short":"T. Henn, T. Kießling, L.W. Molenkamp, D. Reuter, A.D. Wieck, K. Biermann, P.V. Santos, W. Ossau, Physica Status Solidi (B) 251 (2014) 1839–1849.","chicago":"Henn, Tobias, Tobias Kießling, Laurens W. Molenkamp, Dirk Reuter, Andreas D. Wieck, Klaus Biermann, Paulo V. Santos, and Wolfgang Ossau. “Time and Spatially Resolved Electron Spin Detection in Semiconductor Heterostructures by Magneto-Optical Kerr Microscopy.” <i>Physica Status Solidi (B)</i> 251, no. 9 (2014): 1839–49. <a href=\"https://doi.org/10.1002/pssb.201350192\">https://doi.org/10.1002/pssb.201350192</a>.","ieee":"T. Henn <i>et al.</i>, “Time and spatially resolved electron spin detection in semiconductor heterostructures by magneto-optical Kerr microscopy,” <i>physica status solidi (b)</i>, vol. 251, no. 9, pp. 1839–1849, 2014.","apa":"Henn, T., Kießling, T., Molenkamp, L. W., Reuter, D., Wieck, A. D., Biermann, K., … Ossau, W. (2014). Time and spatially resolved electron spin detection in semiconductor heterostructures by magneto-optical Kerr microscopy. <i>Physica Status Solidi (B)</i>, <i>251</i>(9), 1839–1849. <a href=\"https://doi.org/10.1002/pssb.201350192\">https://doi.org/10.1002/pssb.201350192</a>","bibtex":"@article{Henn_Kießling_Molenkamp_Reuter_Wieck_Biermann_Santos_Ossau_2014, title={Time and spatially resolved electron spin detection in semiconductor heterostructures by magneto-optical Kerr microscopy}, volume={251}, DOI={<a href=\"https://doi.org/10.1002/pssb.201350192\">10.1002/pssb.201350192</a>}, number={9}, journal={physica status solidi (b)}, publisher={Wiley}, author={Henn, Tobias and Kießling, Tobias and Molenkamp, Laurens W. and Reuter, Dirk and Wieck, Andreas D. and Biermann, Klaus and Santos, Paulo V. and Ossau, Wolfgang}, year={2014}, pages={1839–1849} }","ama":"Henn T, Kießling T, Molenkamp LW, et al. Time and spatially resolved electron spin detection in semiconductor heterostructures by magneto-optical Kerr microscopy. <i>physica status solidi (b)</i>. 2014;251(9):1839-1849. doi:<a href=\"https://doi.org/10.1002/pssb.201350192\">10.1002/pssb.201350192</a>","mla":"Henn, Tobias, et al. “Time and Spatially Resolved Electron Spin Detection in Semiconductor Heterostructures by Magneto-Optical Kerr Microscopy.” <i>Physica Status Solidi (B)</i>, vol. 251, no. 9, Wiley, 2014, pp. 1839–49, doi:<a href=\"https://doi.org/10.1002/pssb.201350192\">10.1002/pssb.201350192</a>."},"page":"1839-1849","_id":"7230","publisher":"Wiley","user_id":"42514","volume":251,"status":"public","date_created":"2019-01-29T12:33:42Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"issue":"9","publication":"physica status solidi (b)","language":[{"iso":"eng"}],"doi":"10.1002/pssb.201350192","title":"Time and spatially resolved electron spin detection in semiconductor heterostructures by magneto-optical Kerr microscopy","year":"2014","author":[{"last_name":"Henn","first_name":"Tobias","full_name":"Henn, Tobias"},{"full_name":"Kießling, Tobias","last_name":"Kießling","first_name":"Tobias"},{"full_name":"Molenkamp, Laurens W.","last_name":"Molenkamp","first_name":"Laurens W."},{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter","id":"37763"},{"full_name":"Wieck, Andreas D.","first_name":"Andreas D.","last_name":"Wieck"},{"full_name":"Biermann, Klaus","first_name":"Klaus","last_name":"Biermann"},{"full_name":"Santos, Paulo V.","last_name":"Santos","first_name":"Paulo V."},{"first_name":"Wolfgang","last_name":"Ossau","full_name":"Ossau, Wolfgang"}],"publication_identifier":{"issn":["0370-1972"]},"publication_status":"published","date_updated":"2022-01-06T07:03:30Z","intvolume":"       251"},{"department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-01-30T13:07:31Z","issue":"9","publication":"physica status solidi (b)","doi":"10.1002/pssb.201200725","language":[{"iso":"eng"}],"intvolume":"       250","date_updated":"2022-01-06T07:03:31Z","publication_status":"published","publication_identifier":{"issn":["0370-1972"]},"author":[{"full_name":"Moody, Galan","last_name":"Moody","first_name":"Galan"},{"first_name":"Rohan","last_name":"Singh","full_name":"Singh, Rohan"},{"first_name":"Hebin","last_name":"Li","full_name":"Li, Hebin"},{"last_name":"Akimov","first_name":"Ilya A.","full_name":"Akimov, Ilya A."},{"full_name":"Bayer, Manfred","first_name":"Manfred","last_name":"Bayer"},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"full_name":"Wieck, Andreas D.","last_name":"Wieck","first_name":"Andreas D."},{"last_name":"Bracker","first_name":"Allan S.","full_name":"Bracker, Allan S."},{"first_name":"Daniel","last_name":"Gammon","full_name":"Gammon, Daniel"},{"full_name":"Cundiff, Steven T.","last_name":"Cundiff","first_name":"Steven T."}],"title":"Biexcitons in semiconductor quantum dot ensembles","year":"2013","citation":{"ieee":"G. Moody <i>et al.</i>, “Biexcitons in semiconductor quantum dot ensembles,” <i>physica status solidi (b)</i>, vol. 250, no. 9, pp. 1753–1759, 2013.","apa":"Moody, G., Singh, R., Li, H., Akimov, I. A., Bayer, M., Reuter, D., … Cundiff, S. T. (2013). Biexcitons in semiconductor quantum dot ensembles. <i>Physica Status Solidi (B)</i>, <i>250</i>(9), 1753–1759. <a href=\"https://doi.org/10.1002/pssb.201200725\">https://doi.org/10.1002/pssb.201200725</a>","chicago":"Moody, Galan, Rohan Singh, Hebin Li, Ilya A. Akimov, Manfred Bayer, Dirk Reuter, Andreas D. Wieck, Allan S. Bracker, Daniel Gammon, and Steven T. Cundiff. “Biexcitons in Semiconductor Quantum Dot Ensembles.” <i>Physica Status Solidi (B)</i> 250, no. 9 (2013): 1753–59. <a href=\"https://doi.org/10.1002/pssb.201200725\">https://doi.org/10.1002/pssb.201200725</a>.","short":"G. Moody, R. Singh, H. Li, I.A. Akimov, M. Bayer, D. Reuter, A.D. Wieck, A.S. Bracker, D. Gammon, S.T. Cundiff, Physica Status Solidi (B) 250 (2013) 1753–1759.","mla":"Moody, Galan, et al. “Biexcitons in Semiconductor Quantum Dot Ensembles.” <i>Physica Status Solidi (B)</i>, vol. 250, no. 9, Wiley, 2013, pp. 1753–59, doi:<a href=\"https://doi.org/10.1002/pssb.201200725\">10.1002/pssb.201200725</a>.","bibtex":"@article{Moody_Singh_Li_Akimov_Bayer_Reuter_Wieck_Bracker_Gammon_Cundiff_2013, title={Biexcitons in semiconductor quantum dot ensembles}, volume={250}, DOI={<a href=\"https://doi.org/10.1002/pssb.201200725\">10.1002/pssb.201200725</a>}, number={9}, journal={physica status solidi (b)}, publisher={Wiley}, author={Moody, Galan and Singh, Rohan and Li, Hebin and Akimov, Ilya A. and Bayer, Manfred and Reuter, Dirk and Wieck, Andreas D. and Bracker, Allan S. and Gammon, Daniel and Cundiff, Steven T.}, year={2013}, pages={1753–1759} }","ama":"Moody G, Singh R, Li H, et al. Biexcitons in semiconductor quantum dot ensembles. <i>physica status solidi (b)</i>. 2013;250(9):1753-1759. doi:<a href=\"https://doi.org/10.1002/pssb.201200725\">10.1002/pssb.201200725</a>"},"volume":250,"user_id":"42514","publisher":"Wiley","_id":"7263","page":"1753-1759","status":"public"},{"intvolume":"       249","date_updated":"2025-12-16T07:52:26Z","publication_status":"published","publication_identifier":{"issn":["0370-1972"]},"author":[{"id":"468","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero","last_name":"Schmidt","full_name":"Schmidt, Wolf Gero"},{"first_name":"S.","last_name":"Wippermann","full_name":"Wippermann, S."},{"last_name":"Sanna","first_name":"S.","full_name":"Sanna, S."},{"full_name":"Babilon, M.","first_name":"M.","last_name":"Babilon"},{"full_name":"Vollmers, N. J.","first_name":"N. J.","last_name":"Vollmers"},{"id":"171","orcid":"0000-0002-4476-223X","first_name":"Uwe","last_name":"Gerstmann","full_name":"Gerstmann, Uwe"}],"year":"2012","title":"In-Si(111)(4 × 1)/(8 × 2) nanowires: Electron transport, entropy, and metal-insulator transition","doi":"10.1002/pssb.201100457","language":[{"iso":"eng"}],"issue":"2","publication":"physica status solidi (b)","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"790"},{"_id":"230"},{"_id":"27"}],"type":"journal_article","date_created":"2019-10-15T06:56:58Z","status":"public","volume":249,"user_id":"16199","_id":"13820","funded_apc":"1","page":"343-359","project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"citation":{"short":"W.G. Schmidt, S. Wippermann, S. Sanna, M. Babilon, N.J. Vollmers, U. Gerstmann, Physica Status Solidi (b) 249 (2012) 343–359.","chicago":"Schmidt, Wolf Gero, S. Wippermann, S. Sanna, M. Babilon, N. J. Vollmers, and Uwe Gerstmann. “In-Si(111)(4 × 1)/(8 × 2) Nanowires: Electron Transport, Entropy, and Metal-Insulator Transition.” <i>Physica Status Solidi (b)</i> 249, no. 2 (2012): 343–59. <a href=\"https://doi.org/10.1002/pssb.201100457\">https://doi.org/10.1002/pssb.201100457</a>.","ieee":"W. G. Schmidt, S. Wippermann, S. Sanna, M. Babilon, N. J. Vollmers, and U. Gerstmann, “In-Si(111)(4 × 1)/(8 × 2) nanowires: Electron transport, entropy, and metal-insulator transition,” <i>physica status solidi (b)</i>, vol. 249, no. 2, pp. 343–359, 2012, doi: <a href=\"https://doi.org/10.1002/pssb.201100457\">10.1002/pssb.201100457</a>.","apa":"Schmidt, W. G., Wippermann, S., Sanna, S., Babilon, M., Vollmers, N. J., &#38; Gerstmann, U. (2012). In-Si(111)(4 × 1)/(8 × 2) nanowires: Electron transport, entropy, and metal-insulator transition. <i>Physica Status Solidi (b)</i>, <i>249</i>(2), 343–359. <a href=\"https://doi.org/10.1002/pssb.201100457\">https://doi.org/10.1002/pssb.201100457</a>","bibtex":"@article{Schmidt_Wippermann_Sanna_Babilon_Vollmers_Gerstmann_2012, title={In-Si(111)(4 × 1)/(8 × 2) nanowires: Electron transport, entropy, and metal-insulator transition}, volume={249}, DOI={<a href=\"https://doi.org/10.1002/pssb.201100457\">10.1002/pssb.201100457</a>}, number={2}, journal={physica status solidi (b)}, author={Schmidt, Wolf Gero and Wippermann, S. and Sanna, S. and Babilon, M. and Vollmers, N. J. and Gerstmann, Uwe}, year={2012}, pages={343–359} }","ama":"Schmidt WG, Wippermann S, Sanna S, Babilon M, Vollmers NJ, Gerstmann U. In-Si(111)(4 × 1)/(8 × 2) nanowires: Electron transport, entropy, and metal-insulator transition. <i>physica status solidi (b)</i>. 2012;249(2):343-359. doi:<a href=\"https://doi.org/10.1002/pssb.201100457\">10.1002/pssb.201100457</a>","mla":"Schmidt, Wolf Gero, et al. “In-Si(111)(4 × 1)/(8 × 2) Nanowires: Electron Transport, Entropy, and Metal-Insulator Transition.” <i>Physica Status Solidi (b)</i>, vol. 249, no. 2, 2012, pp. 343–59, doi:<a href=\"https://doi.org/10.1002/pssb.201100457\">10.1002/pssb.201100457</a>."}},{"date_created":"2025-12-05T15:08:01Z","department":[{"_id":"15"},{"_id":"170"},{"_id":"297"},{"_id":"35"},{"_id":"230"}],"type":"journal_article","publication":"physica status solidi (b)","issue":"8","abstract":[{"text":"<jats:title>Abstract</jats:title><jats:p>Two slightly different, efficient tight‐binding (TB) models for the description of the electronic properties of nitride‐based semiconductor quantum dots (QDs) have been developed and applied to the calculation of the electronic one‐particle spectrum of these structures. Using these one‐particle QD‐states, dipole and Coulomb matrix elements can be calculated, from which the optical properties of these systems can be obtained. These TB calculations have been performed for nitride‐based QDs with a cubic zincblende structure and those with a wurtzite crystal structure. In this paper, we discuss the general methodology used and the results obtained for the electronic one‐particle states and energies, for the dipole and Coulomb matrix elements, and for the excitonic optical emission and absorption spectra.</jats:p>","lang":"eng"}],"language":[{"iso":"eng"}],"doi":"10.1002/pssb.201147158","author":[{"full_name":"Schulz, S.","last_name":"Schulz","first_name":"S."},{"first_name":"D.","last_name":"Mourad","full_name":"Mourad, D."},{"orcid":"0000-0003-4042-4951","last_name":"Schumacher","first_name":"Stefan","full_name":"Schumacher, Stefan","id":"27271"},{"full_name":"Czycholl, G.","first_name":"G.","last_name":"Czycholl"}],"publication_identifier":{"issn":["0370-1972","1521-3951"]},"year":"2011","title":"Tight‐binding model for the electronic and optical properties of nitride‐based quantum dots","intvolume":"       248","date_updated":"2025-12-05T15:08:40Z","publication_status":"published","citation":{"ama":"Schulz S, Mourad D, Schumacher S, Czycholl G. Tight‐binding model for the electronic and optical properties of nitride‐based quantum dots. <i>physica status solidi (b)</i>. 2011;248(8):1853-1866. doi:<a href=\"https://doi.org/10.1002/pssb.201147158\">10.1002/pssb.201147158</a>","bibtex":"@article{Schulz_Mourad_Schumacher_Czycholl_2011, title={Tight‐binding model for the electronic and optical properties of nitride‐based quantum dots}, volume={248}, DOI={<a href=\"https://doi.org/10.1002/pssb.201147158\">10.1002/pssb.201147158</a>}, number={8}, journal={physica status solidi (b)}, publisher={Wiley}, author={Schulz, S. and Mourad, D. and Schumacher, Stefan and Czycholl, G.}, year={2011}, pages={1853–1866} }","mla":"Schulz, S., et al. “Tight‐binding Model for the Electronic and Optical Properties of Nitride‐based Quantum Dots.” <i>Physica Status Solidi (b)</i>, vol. 248, no. 8, Wiley, 2011, pp. 1853–66, doi:<a href=\"https://doi.org/10.1002/pssb.201147158\">10.1002/pssb.201147158</a>.","short":"S. Schulz, D. Mourad, S. Schumacher, G. Czycholl, Physica Status Solidi (b) 248 (2011) 1853–1866.","chicago":"Schulz, S., D. Mourad, Stefan Schumacher, and G. Czycholl. “Tight‐binding Model for the Electronic and Optical Properties of Nitride‐based Quantum Dots.” <i>Physica Status Solidi (b)</i> 248, no. 8 (2011): 1853–66. <a href=\"https://doi.org/10.1002/pssb.201147158\">https://doi.org/10.1002/pssb.201147158</a>.","apa":"Schulz, S., Mourad, D., Schumacher, S., &#38; Czycholl, G. (2011). Tight‐binding model for the electronic and optical properties of nitride‐based quantum dots. <i>Physica Status Solidi (b)</i>, <i>248</i>(8), 1853–1866. <a href=\"https://doi.org/10.1002/pssb.201147158\">https://doi.org/10.1002/pssb.201147158</a>","ieee":"S. Schulz, D. Mourad, S. Schumacher, and G. Czycholl, “Tight‐binding model for the electronic and optical properties of nitride‐based quantum dots,” <i>physica status solidi (b)</i>, vol. 248, no. 8, pp. 1853–1866, 2011, doi: <a href=\"https://doi.org/10.1002/pssb.201147158\">10.1002/pssb.201147158</a>."},"publisher":"Wiley","_id":"62929","page":"1853-1866","volume":248,"user_id":"16199","status":"public"},{"has_accepted_license":"1","status":"public","volume":248,"user_id":"16199","ddc":["530"],"publisher":"Wiley-VCH","_id":"4091","page":"887-891","quality_controlled":"1","isi":"1","citation":{"short":"M. Wand, A. Schindlmayr, T. Meier, J. Förstner, Physica Status Solidi B 248 (2011) 887–891.","chicago":"Wand, Mathias, Arno Schindlmayr, Torsten Meier, and Jens Förstner. “Simulation of the Ultrafast Nonlinear Optical Response of Metal Slabs.” <i>Physica Status Solidi B</i> 248, no. 4 (2011): 887–91. <a href=\"https://doi.org/10.1002/pssb.201001219\">https://doi.org/10.1002/pssb.201001219</a>.","ieee":"M. Wand, A. Schindlmayr, T. Meier, and J. Förstner, “Simulation of the ultrafast nonlinear optical response of metal slabs,” <i>Physica Status Solidi B</i>, vol. 248, no. 4, pp. 887–891, 2011, doi: <a href=\"https://doi.org/10.1002/pssb.201001219\">10.1002/pssb.201001219</a>.","apa":"Wand, M., Schindlmayr, A., Meier, T., &#38; Förstner, J. (2011). Simulation of the ultrafast nonlinear optical response of metal slabs. <i>Physica Status Solidi B</i>, <i>248</i>(4), 887–891. <a href=\"https://doi.org/10.1002/pssb.201001219\">https://doi.org/10.1002/pssb.201001219</a>","bibtex":"@article{Wand_Schindlmayr_Meier_Förstner_2011, title={Simulation of the ultrafast nonlinear optical response of metal slabs}, volume={248}, DOI={<a href=\"https://doi.org/10.1002/pssb.201001219\">10.1002/pssb.201001219</a>}, number={4}, journal={Physica Status Solidi B}, publisher={Wiley-VCH}, author={Wand, Mathias and Schindlmayr, Arno and Meier, Torsten and Förstner, Jens}, year={2011}, pages={887–891} }","ama":"Wand M, Schindlmayr A, Meier T, Förstner J. Simulation of the ultrafast nonlinear optical response of metal slabs. <i>Physica Status Solidi B</i>. 2011;248(4):887-891. doi:<a href=\"https://doi.org/10.1002/pssb.201001219\">10.1002/pssb.201001219</a>","mla":"Wand, Mathias, et al. “Simulation of the Ultrafast Nonlinear Optical Response of Metal Slabs.” <i>Physica Status Solidi B</i>, vol. 248, no. 4, Wiley-VCH, 2011, pp. 887–91, doi:<a href=\"https://doi.org/10.1002/pssb.201001219\">10.1002/pssb.201001219</a>."},"file_date_updated":"2020-08-30T15:01:30Z","external_id":{"isi":["000288856300020"]},"article_type":"original","intvolume":"       248","publication_status":"published","date_updated":"2025-12-16T11:26:04Z","author":[{"first_name":"Mathias","last_name":"Wand","full_name":"Wand, Mathias"},{"id":"458","last_name":"Schindlmayr","orcid":"0000-0002-4855-071X","first_name":"Arno","full_name":"Schindlmayr, Arno"},{"full_name":"Meier, Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","first_name":"Torsten","id":"344"},{"id":"158","full_name":"Förstner, Jens","orcid":"0000-0001-7059-9862","last_name":"Förstner","first_name":"Jens"}],"publication_identifier":{"eissn":["1521-3951"],"issn":["0370-1972"]},"year":"2011","title":"Simulation of the ultrafast nonlinear optical response of metal slabs","doi":"10.1002/pssb.201001219","language":[{"iso":"eng"}],"abstract":[{"text":"We present a nonequilibrium ab initio method for calculating nonlinear and nonlocal optical effects in metallic slabs with a thickness of several nanometers. The numerical analysis is based on the full solution of the time‐dependent Kohn–Sham equations for a jellium system and allows to study the optical response of metal electrons subject to arbitrarily shaped intense light pulses. We find a strong localization of the generated second‐harmonic current in the surface regions of the slabs. ","lang":"eng"}],"issue":"4","publication":"Physica Status Solidi B","department":[{"_id":"293"},{"_id":"230"},{"_id":"296"},{"_id":"15"},{"_id":"170"},{"_id":"35"},{"_id":"34"},{"_id":"61"}],"type":"journal_article","keyword":["tet_topic_shg"],"date_created":"2018-08-23T09:53:38Z","file":[{"title":"Simulation of the ultrafast optical response of metal slabs","file_id":"4092","content_type":"application/pdf","relation":"main_file","date_updated":"2020-08-30T15:01:30Z","file_name":"2011 Wand,Schindlmayr,Meier,Förstner_Simulation of the ultrafast nonlinear optical response of metal slabs.pdf","access_level":"closed","file_size":739579,"description":"© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim","date_created":"2018-08-23T09:55:13Z","creator":"hclaudia"}]},{"file":[{"file_id":"4211","content_type":"application/pdf","success":1,"file_name":"Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer.pdf","file_size":911931,"access_level":"closed","relation":"main_file","date_updated":"2018-08-28T12:43:31Z","date_created":"2018-08-28T12:43:31Z","creator":"hclaudia"}],"date_created":"2018-08-28T12:42:58Z","type":"journal_article","department":[{"_id":"15"}],"issue":"7","publication":"physica status solidi (b)","abstract":[{"lang":"eng","text":"In this paper we demonstrate a strain-driven GaN interlayer method to reduce dislocation densities in GaN grown on (111) oriented silicon by metal organic vapour phase epitaxy (MOVPE). In order to achieve crack-free GaN layers of\r\nreasonable thicknesses and dislocation densities it is crucial to integrate both dislocation reduction and strain management layers. In contrast to techniques like FACELO or nanoELO we show the in situ formation of GaN islands directly on the AlN nucleation layer without the need to deposit a SiO2 or SiNx mask. A graded AlGaN layer for strain management can be grown on top of this dislocation reducing 3D GaN inter-layer in order to achieve crack-free GaN layers grown on top of the AlGaN strain management layer. Furthermore, an additional SiNx layer for subsequent dislocation reduction can also be incorporated into the structure and is shown to efficiently reduce the dislocation density down to the low 10^9 cm^2. The structural properties of the 3D GaN island buffer layer and overgrown\r\nsamples are studied by means of SEM, cross-sectional, and plan view TEM. Cathodoluminiscence in an SEM is employed to correlate the dislocation microstructure as observed by plan view TEM with luminescent properties."}],"language":[{"iso":"eng"}],"doi":"10.1002/pssb.200983537","year":"2010","title":"Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer","publication_identifier":{"issn":["0370-1972","1521-3951"]},"author":[{"full_name":"Häberlen, Maik","last_name":"Häberlen","first_name":"Maik"},{"full_name":"Zhu, Dandan","first_name":"Dandan","last_name":"Zhu"},{"last_name":"McAleese","first_name":"Clifford","full_name":"McAleese, Clifford"},{"full_name":"Zhu, Tongtong","first_name":"Tongtong","last_name":"Zhu"},{"full_name":"Kappers, Menno J.","last_name":"Kappers","first_name":"Menno J."},{"last_name":"Humphreys","first_name":"Colin J.","full_name":"Humphreys, Colin J."}],"date_updated":"2022-01-06T07:00:36Z","publication_status":"published","intvolume":"       247","article_type":"original","file_date_updated":"2018-08-28T12:43:31Z","citation":{"apa":"Häberlen, M., Zhu, D., McAleese, C., Zhu, T., Kappers, M. J., &#38; Humphreys, C. J. (2010). Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. <i>Physica Status Solidi (B)</i>, <i>247</i>(7), 1753–1756. <a href=\"https://doi.org/10.1002/pssb.200983537\">https://doi.org/10.1002/pssb.200983537</a>","ieee":"M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer,” <i>physica status solidi (b)</i>, vol. 247, no. 7, pp. 1753–1756, 2010.","short":"M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M.J. Kappers, C.J. Humphreys, Physica Status Solidi (B) 247 (2010) 1753–1756.","chicago":"Häberlen, Maik, Dandan Zhu, Clifford McAleese, Tongtong Zhu, Menno J. Kappers, and Colin J. 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Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. <i>physica status solidi (b)</i>. 2010;247(7):1753-1756. doi:<a href=\"https://doi.org/10.1002/pssb.200983537\">10.1002/pssb.200983537</a>","bibtex":"@article{Häberlen_Zhu_McAleese_Zhu_Kappers_Humphreys_2010, title={Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer}, volume={247}, DOI={<a href=\"https://doi.org/10.1002/pssb.200983537\">10.1002/pssb.200983537</a>}, number={7}, journal={physica status solidi (b)}, publisher={Wiley}, author={Häberlen, Maik and Zhu, Dandan and McAleese, Clifford and Zhu, Tongtong and Kappers, Menno J. and Humphreys, Colin J.}, year={2010}, pages={1753–1756} }"},"page":"1753-1756","publisher":"Wiley","_id":"4210","ddc":["530"],"user_id":"55706","volume":247,"status":"public","has_accepted_license":"1"},{"citation":{"short":"A. Scholle, S. Greulich-Weber, D.J. As, Ch. Mietze, N.T. Son, C. Hemmingsson, B. Monemar, E. Janzén, U. 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Metal-insulator transition in Si(111)-(4 × 1)/(8 × 2)-In studied by optical spectroscopy. <i>physica status solidi (b)</i>. 2010;247(8):2033-2039. doi:<a href=\"https://doi.org/10.1002/pssb.200983961\">10.1002/pssb.200983961</a>","bibtex":"@article{Speiser_Chandola_Hinrichs_Gensch_Cobet_Wippermann_Schmidt_Bechstedt_Richter_Fleischer_et al._2010, title={Metal-insulator transition in Si(111)-(4 × 1)/(8 × 2)-In studied by optical spectroscopy}, volume={247}, DOI={<a href=\"https://doi.org/10.1002/pssb.200983961\">10.1002/pssb.200983961</a>}, number={8}, journal={physica status solidi (b)}, author={Speiser, E. and Chandola, S. and Hinrichs, K. and Gensch, M. and Cobet, C. and Wippermann, S. and Schmidt, Wolf Gero and Bechstedt, F. and Richter, W. and Fleischer, K. and et al.}, year={2010}, pages={2033–2039} }"},"page":"2033-2039","_id":"13831","language":[{"iso":"eng"}],"doi":"10.1002/pssb.200983961","user_id":"16199","volume":247,"status":"public","title":"Metal-insulator transition in Si(111)-(4 × 1)/(8 × 2)-In studied by optical spectroscopy","year":"2010","author":[{"full_name":"Speiser, E.","first_name":"E.","last_name":"Speiser"},{"first_name":"S.","last_name":"Chandola","full_name":"Chandola, S."},{"full_name":"Hinrichs, K.","first_name":"K.","last_name":"Hinrichs"},{"full_name":"Gensch, M.","last_name":"Gensch","first_name":"M."},{"last_name":"Cobet","first_name":"C.","full_name":"Cobet, C."},{"last_name":"Wippermann","first_name":"S.","full_name":"Wippermann, S."},{"id":"468","first_name":"Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","full_name":"Schmidt, Wolf Gero"},{"full_name":"Bechstedt, F.","first_name":"F.","last_name":"Bechstedt"},{"full_name":"Richter, W.","last_name":"Richter","first_name":"W."},{"full_name":"Fleischer, K.","first_name":"K.","last_name":"Fleischer"},{"first_name":"J. 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H.","last_name":"Hahn"},{"full_name":"Seino, K.","first_name":"K.","last_name":"Seino"},{"id":"468","first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt","full_name":"Schmidt, Wolf Gero"},{"last_name":"Furthmüller","first_name":"J.","full_name":"Furthmüller, J."},{"full_name":"Bechstedt, F.","last_name":"Bechstedt","first_name":"F."}],"date_updated":"2025-12-05T13:19:29Z","publication_status":"published","intvolume":"       242"},{"publication":"physica status solidi (b)","issue":"13","citation":{"bibtex":"@article{Esser_Rakel_Cobet_Schmidt_Braun_Cardona_2005, title={VUV-ellipsometry on GaN: Probing conduction band properties by core level excitations}, volume={242}, DOI={<a href=\"https://doi.org/10.1002/pssb.200541315\">10.1002/pssb.200541315</a>}, number={13}, journal={physica status solidi (b)}, author={Esser, N. and Rakel, M. and Cobet, C. and Schmidt, Wolf Gero and Braun, W. and Cardona, M.}, year={2005}, pages={2601–2609} }","ama":"Esser N, Rakel M, Cobet C, Schmidt WG, Braun W, Cardona M. VUV-ellipsometry on GaN: Probing conduction band properties by core level excitations. <i>physica status solidi (b)</i>. 2005;242(13):2601-2609. doi:<a href=\"https://doi.org/10.1002/pssb.200541315\">10.1002/pssb.200541315</a>","mla":"Esser, N., et al. “VUV-Ellipsometry on GaN: Probing Conduction Band Properties by Core Level Excitations.” <i>Physica Status Solidi (b)</i>, vol. 242, no. 13, 2005, pp. 2601–09, doi:<a href=\"https://doi.org/10.1002/pssb.200541315\">10.1002/pssb.200541315</a>.","short":"N. Esser, M. Rakel, C. Cobet, W.G. Schmidt, W. Braun, M. Cardona, Physica Status Solidi (b) 242 (2005) 2601–2609.","chicago":"Esser, N., M. Rakel, C. Cobet, Wolf Gero Schmidt, W. Braun, and M. Cardona. “VUV-Ellipsometry on GaN: Probing Conduction Band Properties by Core Level Excitations.” <i>Physica Status Solidi (b)</i> 242, no. 13 (2005): 2601–9. <a href=\"https://doi.org/10.1002/pssb.200541315\">https://doi.org/10.1002/pssb.200541315</a>.","ieee":"N. Esser, M. Rakel, C. Cobet, W. G. Schmidt, W. Braun, and M. Cardona, “VUV-ellipsometry on GaN: Probing conduction band properties by core level excitations,” <i>physica status solidi (b)</i>, vol. 242, no. 13, pp. 2601–2609, 2005, doi: <a href=\"https://doi.org/10.1002/pssb.200541315\">10.1002/pssb.200541315</a>.","apa":"Esser, N., Rakel, M., Cobet, C., Schmidt, W. G., Braun, W., &#38; Cardona, M. (2005). VUV-ellipsometry on GaN: Probing conduction band properties by core level excitations. <i>Physica Status Solidi (b)</i>, <i>242</i>(13), 2601–2609. <a href=\"https://doi.org/10.1002/pssb.200541315\">https://doi.org/10.1002/pssb.200541315</a>"},"type":"journal_article","department":[{"_id":"15"},{"_id":"295"},{"_id":"170"},{"_id":"35"},{"_id":"230"}],"date_created":"2019-10-09T11:32:51Z","date_updated":"2025-12-05T13:19:07Z","publication_status":"published","intvolume":"       242","year":"2005","status":"public","title":"VUV-ellipsometry on GaN: Probing conduction band properties by core level excitations","publication_identifier":{"issn":["0370-1972","1521-3951"]},"author":[{"full_name":"Esser, N.","first_name":"N.","last_name":"Esser"},{"full_name":"Rakel, M.","last_name":"Rakel","first_name":"M."},{"last_name":"Cobet","first_name":"C.","full_name":"Cobet, C."},{"full_name":"Schmidt, Wolf Gero","first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt","id":"468"},{"last_name":"Braun","first_name":"W.","full_name":"Braun, W."},{"full_name":"Cardona, M.","last_name":"Cardona","first_name":"M."}],"doi":"10.1002/pssb.200541315","user_id":"16199","volume":242,"page":"2601-2609","_id":"13700","language":[{"iso":"eng"}]},{"publication_status":"published","date_updated":"2025-12-05T13:26:19Z","intvolume":"       242","status":"public","title":"Calculation of reflectance anisotropy for semiconductor surface exploration","year":"2005","publication_identifier":{"issn":["0370-1972","1521-3951"]},"author":[{"first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt","full_name":"Schmidt, Wolf Gero","id":"468"}],"user_id":"16199","doi":"10.1002/pssb.200541112","volume":242,"page":"2751-2764","language":[{"iso":"eng"}],"_id":"13698","issue":"13","publication":"physica status solidi (b)","citation":{"chicago":"Schmidt, Wolf Gero. “Calculation of Reflectance Anisotropy for Semiconductor Surface Exploration.” <i>Physica Status Solidi (b)</i> 242, no. 13 (2005): 2751–64. <a href=\"https://doi.org/10.1002/pssb.200541112\">https://doi.org/10.1002/pssb.200541112</a>.","short":"W.G. Schmidt, Physica Status Solidi (b) 242 (2005) 2751–2764.","apa":"Schmidt, W. G. (2005). Calculation of reflectance anisotropy for semiconductor surface exploration. <i>Physica Status Solidi (b)</i>, <i>242</i>(13), 2751–2764. <a href=\"https://doi.org/10.1002/pssb.200541112\">https://doi.org/10.1002/pssb.200541112</a>","ieee":"W. G. Schmidt, “Calculation of reflectance anisotropy for semiconductor surface exploration,” <i>physica status solidi (b)</i>, vol. 242, no. 13, pp. 2751–2764, 2005, doi: <a href=\"https://doi.org/10.1002/pssb.200541112\">10.1002/pssb.200541112</a>.","ama":"Schmidt WG. Calculation of reflectance anisotropy for semiconductor surface exploration. <i>physica status solidi (b)</i>. 2005;242(13):2751-2764. doi:<a href=\"https://doi.org/10.1002/pssb.200541112\">10.1002/pssb.200541112</a>","bibtex":"@article{Schmidt_2005, title={Calculation of reflectance anisotropy for semiconductor surface exploration}, volume={242}, DOI={<a href=\"https://doi.org/10.1002/pssb.200541112\">10.1002/pssb.200541112</a>}, number={13}, journal={physica status solidi (b)}, author={Schmidt, Wolf Gero}, year={2005}, pages={2751–2764} }","mla":"Schmidt, Wolf Gero. “Calculation of Reflectance Anisotropy for Semiconductor Surface Exploration.” <i>Physica Status Solidi (b)</i>, vol. 242, no. 13, 2005, pp. 2751–64, doi:<a href=\"https://doi.org/10.1002/pssb.200541112\">10.1002/pssb.200541112</a>."},"type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"date_created":"2019-10-09T11:29:20Z"},{"author":[{"full_name":"Butscher, S.","last_name":"Butscher","first_name":"S."},{"full_name":"Förstner, Jens","orcid":"0000-0001-7059-9862","first_name":"Jens","last_name":"Förstner","id":"158"},{"first_name":"I.","last_name":"Waldmüller","full_name":"Waldmüller, I."},{"full_name":"Knorr, A.","first_name":"A.","last_name":"Knorr"}],"publication_identifier":{"issn":["0370-1972","1521-3951"]},"year":"2004","title":"Polaron signatures in the line shape of semiconductor ;intersubband transitions: quantum kinetics of the electron–phonon interaction","article_type":"original","intvolume":"       241","publication_status":"published","date_updated":"2022-01-06T07:00:46Z","language":[{"iso":"eng"}],"doi":"10.1002/pssb.200409053","issue":"11","publication":"physica status solidi (b)","extern":"1","abstract":[{"text":"We present a theory of the optical line shape of coherent intersubband transitions in a semiconductor\r\nquantum well, considering non-Markovian LO-phonon scattering as major broadening mechanism. We\r\nshow that a quantum kinetic approach leads to additional polaron resonances and a resonance enhancement\r\nfor gap energies close to the phonon energy.","lang":"eng"}],"date_created":"2018-08-29T09:48:18Z","file":[{"date_created":"2018-08-29T09:48:43Z","creator":"hclaudia","success":1,"content_type":"application/pdf","file_id":"4275","access_level":"closed","file_size":209799,"file_name":"2004 Butscher,Förstner,Waldmüller,Knorr_Polaron signatures in the line shape of semiconductor ;intersubband transitions.pdf","date_updated":"2018-08-29T09:48:43Z","relation":"main_file"}],"type":"journal_article","keyword":["tet_topic_qw"],"status":"public","has_accepted_license":"1","publisher":"Wiley","_id":"4274","page":"R49-R51","volume":241,"user_id":"55706","ddc":["530"],"citation":{"ieee":"S. Butscher, J. Förstner, I. Waldmüller, and A. Knorr, “Polaron signatures in the line shape of semiconductor ;intersubband transitions: quantum kinetics of the electron–phonon interaction,” <i>physica status solidi (b)</i>, vol. 241, no. 11, pp. R49–R51, 2004.","apa":"Butscher, S., Förstner, J., Waldmüller, I., &#38; Knorr, A. (2004). Polaron signatures in the line shape of semiconductor ;intersubband transitions: quantum kinetics of the electron–phonon interaction. <i>Physica Status Solidi (B)</i>, <i>241</i>(11), R49–R51. <a href=\"https://doi.org/10.1002/pssb.200409053\">https://doi.org/10.1002/pssb.200409053</a>","short":"S. Butscher, J. Förstner, I. Waldmüller, A. Knorr, Physica Status Solidi (B) 241 (2004) R49–R51.","chicago":"Butscher, S., Jens Förstner, I. Waldmüller, and A. Knorr. “Polaron Signatures in the Line Shape of Semiconductor ;Intersubband Transitions: Quantum Kinetics of the Electron–Phonon Interaction.” <i>Physica Status Solidi (B)</i> 241, no. 11 (2004): R49–51. <a href=\"https://doi.org/10.1002/pssb.200409053\">https://doi.org/10.1002/pssb.200409053</a>.","mla":"Butscher, S., et al. “Polaron Signatures in the Line Shape of Semiconductor ;Intersubband Transitions: Quantum Kinetics of the Electron–Phonon Interaction.” <i>Physica Status Solidi (B)</i>, vol. 241, no. 11, Wiley, 2004, pp. R49–51, doi:<a href=\"https://doi.org/10.1002/pssb.200409053\">10.1002/pssb.200409053</a>.","bibtex":"@article{Butscher_Förstner_Waldmüller_Knorr_2004, title={Polaron signatures in the line shape of semiconductor ;intersubband transitions: quantum kinetics of the electron–phonon interaction}, volume={241}, DOI={<a href=\"https://doi.org/10.1002/pssb.200409053\">10.1002/pssb.200409053</a>}, number={11}, journal={physica status solidi (b)}, publisher={Wiley}, author={Butscher, S. and Förstner, Jens and Waldmüller, I. and Knorr, A.}, year={2004}, pages={R49–R51} }","ama":"Butscher S, Förstner J, Waldmüller I, Knorr A. Polaron signatures in the line shape of semiconductor ;intersubband transitions: quantum kinetics of the electron–phonon interaction. <i>physica status solidi (b)</i>. 2004;241(11):R49-R51. doi:<a href=\"https://doi.org/10.1002/pssb.200409053\">10.1002/pssb.200409053</a>"},"file_date_updated":"2018-08-29T09:48:43Z"}]