[{"user_id":"20798","volume":263,"_id":"65741","publisher":"Wiley","status":"public","citation":{"ieee":"D. J. As, F. Meier, P. Mahler, and C. Meier, “X‐Ray Investigation of the Thermal Expansion Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si (001) Substrates,” <i>physica status solidi (b)</i>, vol. 263, no. 2, Art. no. e202500477, 2026, doi: <a href=\"https://doi.org/10.1002/pssb.202500477\">10.1002/pssb.202500477</a>.","apa":"As, D. J., Meier, F., Mahler, P., &#38; Meier, C. (2026). X‐Ray Investigation of the Thermal Expansion Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si (001) Substrates. <i>Physica Status Solidi (b)</i>, <i>263</i>(2), Article e202500477. <a href=\"https://doi.org/10.1002/pssb.202500477\">https://doi.org/10.1002/pssb.202500477</a>","chicago":"As, Donat Josef, Falco Meier, Pascal Mahler, and Cedrik Meier. “X‐Ray Investigation of the Thermal Expansion Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si (001) Substrates.” <i>Physica Status Solidi (b)</i> 263, no. 2 (2026). <a href=\"https://doi.org/10.1002/pssb.202500477\">https://doi.org/10.1002/pssb.202500477</a>.","short":"D.J. As, F. Meier, P. Mahler, C. Meier, Physica Status Solidi (b) 263 (2026).","mla":"As, Donat Josef, et al. “X‐Ray Investigation of the Thermal Expansion Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si (001) Substrates.” <i>Physica Status Solidi (b)</i>, vol. 263, no. 2, e202500477, Wiley, 2026, doi:<a href=\"https://doi.org/10.1002/pssb.202500477\">10.1002/pssb.202500477</a>.","bibtex":"@article{As_Meier_Mahler_Meier_2026, title={X‐Ray Investigation of the Thermal Expansion Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si (001) Substrates}, volume={263}, DOI={<a href=\"https://doi.org/10.1002/pssb.202500477\">10.1002/pssb.202500477</a>}, number={2e202500477}, journal={physica status solidi (b)}, publisher={Wiley}, author={As, Donat Josef and Meier, Falco and Mahler, Pascal and Meier, Cedrik}, year={2026} }","ama":"As DJ, Meier F, Mahler P, Meier C. X‐Ray Investigation of the Thermal Expansion Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si (001) Substrates. <i>physica status solidi (b)</i>. 2026;263(2). doi:<a href=\"https://doi.org/10.1002/pssb.202500477\">10.1002/pssb.202500477</a>"},"doi":"10.1002/pssb.202500477","article_number":"e202500477","language":[{"iso":"eng"}],"date_updated":"2026-06-01T09:23:41Z","publication_status":"published","intvolume":"       263","article_type":"original","title":"X‐Ray Investigation of the Thermal Expansion Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si (001) Substrates","year":"2026","author":[{"id":"14","full_name":"As, Donat Josef","orcid":"0000-0003-1121-3565","last_name":"As","first_name":"Donat Josef"},{"last_name":"Meier","first_name":"Falco","full_name":"Meier, Falco"},{"full_name":"Mahler, Pascal","first_name":"Pascal","last_name":"Mahler"},{"first_name":"Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","id":"20798"}],"publication_identifier":{"issn":["0370-1972","1521-3951"]},"type":"journal_article","department":[{"_id":"15"}],"date_created":"2026-06-01T09:22:04Z","abstract":[{"text":"<jats:p>\r\n                    This work investigates the temperature dependence of the lattice constant\r\n                    <jats:italic>a</jats:italic>\r\n                    <jats:sub>exp</jats:sub>\r\n                    of cubic GaN/3C‐SiC/Si (001) epilayers grown at 740°C by plasma‐assisted molecular beam epitaxy is investigated. High resolution X‐ray diffraction is performed to determine the lattice constant, using an Anton–Paar DHS1100 stage to vary the sample temperature from 25°C to 900°C, calibrated against the underlying single‐crystalline silicon substrate. A linear increase in\r\n                    <jats:italic>a</jats:italic>\r\n                    <jats:sub>exp</jats:sub>\r\n                    with rising temperature is observed. The thermal expansion behaviour is modelled using Debye´s phonon dispersion. The fitted lattice parameters are used to calculate the thermal expansion coefficient (TEC). At room temperature the TEC is determined to be\r\n                    <jats:italic>α</jats:italic>\r\n                    <jats:sub>Debye </jats:sub>\r\n                    ≈ 5.25 × 10\r\n                    <jats:sup>−6</jats:sup>\r\n                     K\r\n                    <jats:sup>−1</jats:sup>\r\n                    . We further compare the TEC of the cubic GaN epilayer to that of free‐standing hexagonal GaN using the crystallographic relationship of , demonstrating good agreement between both phases. Using literature values for the elastic constants of cubic GaN, the corresponding elastic moduli and Debye temperature Θ\r\n                    <jats:sub>D</jats:sub>\r\n                    are calculated. An average value of Θ\r\n                    <jats:sub>D</jats:sub>\r\n                    of ≈905 ± 25 K is obtained, which is very close to our experimental results. Moreover, tensile strain is found to be present in our sample at room temperature, leading to an increase in the TEC. The impact of strain on the thermal properties of cubic GaN is discussed.\r\n                  </jats:p>","lang":"eng"}],"publication":"physica status solidi (b)","issue":"2"},{"status":"public","_id":"46132","publisher":"Wiley","user_id":"42514","volume":260,"citation":{"ieee":"M. Littmann, D. Reuter, and D. J. As, “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy,” <i>physica status solidi (b)</i>, vol. 260, no. 7, 2023, doi: <a href=\"https://doi.org/10.1002/pssb.202300034\">10.1002/pssb.202300034</a>.","apa":"Littmann, M., Reuter, D., &#38; As, D. J. (2023). Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy. <i>Physica Status Solidi (b)</i>, <i>260</i>(7). <a href=\"https://doi.org/10.1002/pssb.202300034\">https://doi.org/10.1002/pssb.202300034</a>","chicago":"Littmann, Mario, Dirk Reuter, and Donat Josef As. “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy.” <i>Physica Status Solidi (b)</i> 260, no. 7 (2023). <a href=\"https://doi.org/10.1002/pssb.202300034\">https://doi.org/10.1002/pssb.202300034</a>.","short":"M. Littmann, D. Reuter, D.J. As, Physica Status Solidi (b) 260 (2023).","mla":"Littmann, Mario, et al. “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy.” <i>Physica Status Solidi (b)</i>, vol. 260, no. 7, Wiley, 2023, doi:<a href=\"https://doi.org/10.1002/pssb.202300034\">10.1002/pssb.202300034</a>.","bibtex":"@article{Littmann_Reuter_As_2023, title={Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy}, volume={260}, DOI={<a href=\"https://doi.org/10.1002/pssb.202300034\">10.1002/pssb.202300034</a>}, number={7}, journal={physica status solidi (b)}, publisher={Wiley}, author={Littmann, Mario and Reuter, Dirk and As, Donat Josef}, year={2023} }","ama":"Littmann M, Reuter D, As DJ. Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy. <i>physica status solidi (b)</i>. 2023;260(7). doi:<a href=\"https://doi.org/10.1002/pssb.202300034\">10.1002/pssb.202300034</a>"},"title":"Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy","year":"2023","author":[{"last_name":"Littmann","first_name":"Mario","full_name":"Littmann, Mario"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"id":"14","orcid":"0000-0003-1121-3565","last_name":"As","first_name":"Donat Josef","full_name":"As, Donat Josef"}],"publication_identifier":{"issn":["0370-1972","1521-3951"]},"publication_status":"published","date_updated":"2023-07-25T08:07:20Z","intvolume":"       260","language":[{"iso":"eng"}],"doi":"10.1002/pssb.202300034","issue":"7","publication":"physica status solidi (b)","date_created":"2023-07-25T08:06:13Z","keyword":["Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}]},{"year":"2022","status":"public","title":"Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks","author":[{"full_name":"Meier, Falco","first_name":"Falco","last_name":"Meier"},{"first_name":"Mario","last_name":"Littmann","full_name":"Littmann, Mario"},{"id":"46952","last_name":"Bürger","first_name":"Julius","full_name":"Bürger, Julius"},{"full_name":"Riedl, Thomas","last_name":"Riedl","first_name":"Thomas","id":"36950"},{"first_name":"Daniel","last_name":"Kool","full_name":"Kool, Daniel","id":"44586"},{"id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg"},{"id":"37763","last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk"},{"id":"14","orcid":"0000-0003-1121-3565","last_name":"As","first_name":"Donat Josef","full_name":"As, Donat Josef"}],"publication_identifier":{"issn":["0370-1972","1521-3951"]},"date_updated":"2023-01-04T14:53:24Z","publication_status":"published","article_number":"2200508","language":[{"iso":"eng"}],"_id":"35232","publisher":"Wiley","doi":"10.1002/pssb.202200508","user_id":"77496","publication":"physica status solidi (b)","citation":{"bibtex":"@article{Meier_Littmann_Bürger_Riedl_Kool_Lindner_Reuter_As_2022, title={Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks}, DOI={<a href=\"https://doi.org/10.1002/pssb.202200508\">10.1002/pssb.202200508</a>}, number={2200508}, journal={physica status solidi (b)}, publisher={Wiley}, author={Meier, Falco and Littmann, Mario and Bürger, Julius and Riedl, Thomas and Kool, Daniel and Lindner, Jörg and Reuter, Dirk and As, Donat Josef}, year={2022} }","ama":"Meier F, Littmann M, Bürger J, et al. Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks. <i>physica status solidi (b)</i>. Published online 2022. doi:<a href=\"https://doi.org/10.1002/pssb.202200508\">10.1002/pssb.202200508</a>","mla":"Meier, Falco, et al. “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks.” <i>Physica Status Solidi (b)</i>, 2200508, Wiley, 2022, doi:<a href=\"https://doi.org/10.1002/pssb.202200508\">10.1002/pssb.202200508</a>.","short":"F. Meier, M. Littmann, J. Bürger, T. Riedl, D. Kool, J. Lindner, D. Reuter, D.J. As, Physica Status Solidi (b) (2022).","chicago":"Meier, Falco, Mario Littmann, Julius Bürger, Thomas Riedl, Daniel Kool, Jörg Lindner, Dirk Reuter, and Donat Josef As. “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks.” <i>Physica Status Solidi (b)</i>, 2022. <a href=\"https://doi.org/10.1002/pssb.202200508\">https://doi.org/10.1002/pssb.202200508</a>.","ieee":"F. Meier <i>et al.</i>, “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks,” <i>physica status solidi (b)</i>, Art. no. 2200508, 2022, doi: <a href=\"https://doi.org/10.1002/pssb.202200508\">10.1002/pssb.202200508</a>.","apa":"Meier, F., Littmann, M., Bürger, J., Riedl, T., Kool, D., Lindner, J., Reuter, D., &#38; As, D. J. (2022). Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks. <i>Physica Status Solidi (b)</i>, Article 2200508. <a href=\"https://doi.org/10.1002/pssb.202200508\">https://doi.org/10.1002/pssb.202200508</a>"},"date_created":"2023-01-04T14:51:51Z","type":"journal_article","keyword":["Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"15"}]},{"issue":"2","publication":"physica status solidi (b)","abstract":[{"lang":"eng","text":"<jats:sec><jats:label /><jats:p>The third‐order susceptibility  of lithium niobate (LiNbO<jats:sub>3</jats:sub>) is calculated within a Berry‐phase formulation of the dynamical polarization based on the electronic structure obtained within density‐functional theory (DFT). Maximum  values of the order of  m V are calculated for photon energies between 1.2 and 2 eV, i.e., in the lower half of the optical bandgap of lithium niobate. Both free and bound electron (bi)polarons are found to lead to a remarkable enhancement of the third‐order susceptibility for photon energies below 1 eV.</jats:p></jats:sec>"}],"date_created":"2024-06-24T05:59:11Z","type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"790"},{"_id":"230"},{"_id":"429"},{"_id":"27"}],"year":"2022","title":"Third‐Order Susceptibility of Lithium Niobate: Influence of Polarons and Bipolarons","author":[{"full_name":"Kozub, Agnieszka L.","first_name":"Agnieszka L.","last_name":"Kozub"},{"last_name":"Gerstmann","first_name":"Uwe","orcid":"0000-0002-4476-223X","full_name":"Gerstmann, Uwe","id":"171"},{"id":"468","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero","last_name":"Schmidt","full_name":"Schmidt, Wolf Gero"}],"publication_identifier":{"issn":["0370-1972","1521-3951"]},"date_updated":"2024-06-24T06:02:58Z","publication_status":"published","intvolume":"       260","language":[{"iso":"eng"}],"doi":"10.1002/pssb.202200453","citation":{"ieee":"A. L. Kozub, U. Gerstmann, and W. G. Schmidt, “Third‐Order Susceptibility of Lithium Niobate: Influence of Polarons and Bipolarons,” <i>physica status solidi (b)</i>, vol. 260, no. 2, 2022, doi: <a href=\"https://doi.org/10.1002/pssb.202200453\">10.1002/pssb.202200453</a>.","apa":"Kozub, A. L., Gerstmann, U., &#38; Schmidt, W. G. (2022). Third‐Order Susceptibility of Lithium Niobate: Influence of Polarons and Bipolarons. <i>Physica Status Solidi (b)</i>, <i>260</i>(2). <a href=\"https://doi.org/10.1002/pssb.202200453\">https://doi.org/10.1002/pssb.202200453</a>","short":"A.L. Kozub, U. Gerstmann, W.G. Schmidt, Physica Status Solidi (b) 260 (2022).","chicago":"Kozub, Agnieszka L., Uwe Gerstmann, and Wolf Gero Schmidt. “Third‐Order Susceptibility of Lithium Niobate: Influence of Polarons and Bipolarons.” <i>Physica Status Solidi (b)</i> 260, no. 2 (2022). <a href=\"https://doi.org/10.1002/pssb.202200453\">https://doi.org/10.1002/pssb.202200453</a>.","mla":"Kozub, Agnieszka L., et al. “Third‐Order Susceptibility of Lithium Niobate: Influence of Polarons and Bipolarons.” <i>Physica Status Solidi (b)</i>, vol. 260, no. 2, Wiley, 2022, doi:<a href=\"https://doi.org/10.1002/pssb.202200453\">10.1002/pssb.202200453</a>.","bibtex":"@article{Kozub_Gerstmann_Schmidt_2022, title={Third‐Order Susceptibility of Lithium Niobate: Influence of Polarons and Bipolarons}, volume={260}, DOI={<a href=\"https://doi.org/10.1002/pssb.202200453\">10.1002/pssb.202200453</a>}, number={2}, journal={physica status solidi (b)}, publisher={Wiley}, author={Kozub, Agnieszka L. and Gerstmann, Uwe and Schmidt, Wolf Gero}, year={2022} }","ama":"Kozub AL, Gerstmann U, Schmidt WG. Third‐Order Susceptibility of Lithium Niobate: Influence of Polarons and Bipolarons. <i>physica status solidi (b)</i>. 2022;260(2). doi:<a href=\"https://doi.org/10.1002/pssb.202200453\">10.1002/pssb.202200453</a>"},"project":[{"_id":"53","grant_number":"231447078","name":"TRR 142: TRR 142 - Maßgeschneiderte nichtlineare Photonik: Von grundlegenden Konzepten zu funktionellen Strukturen"},{"_id":"55","name":"TRR 142 - B: TRR 142 - Project Area B"},{"_id":"52","name":"PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"status":"public","_id":"54849","publisher":"Wiley","user_id":"16199","volume":260},{"status":"public","volume":259,"user_id":"16199","publisher":"Wiley","_id":"37656","project":[{"name":"PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"citation":{"mla":"Glahn, Luis Joel, et al. “Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic Properties.” <i>Physica Status Solidi (b)</i>, vol. 259, no. 11, 2200308, Wiley, 2022, doi:<a href=\"https://doi.org/10.1002/pssb.202200308\">10.1002/pssb.202200308</a>.","ama":"Glahn LJ, Ruiz Alvarado IA, Neufeld S, et al. Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic Properties. <i>physica status solidi (b)</i>. 2022;259(11). doi:<a href=\"https://doi.org/10.1002/pssb.202200308\">10.1002/pssb.202200308</a>","bibtex":"@article{Glahn_Ruiz Alvarado_Neufeld_Zare Pour_Paszuk_Ostheimer_Shekarabi_Romanyuk_Moritz_Hofmann_et al._2022, title={Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic Properties}, volume={259}, DOI={<a href=\"https://doi.org/10.1002/pssb.202200308\">10.1002/pssb.202200308</a>}, number={112200308}, journal={physica status solidi (b)}, publisher={Wiley}, author={Glahn, Luis Joel and Ruiz Alvarado, Isaac Azahel and Neufeld, Sergej and Zare Pour, Mohammad Amin and Paszuk, Agnieszka and Ostheimer, David and Shekarabi, Sahar and Romanyuk, Oleksandr and Moritz, Dominik Christian and Hofmann, Jan Philipp and et al.}, year={2022} }","apa":"Glahn, L. J., Ruiz Alvarado, I. A., Neufeld, S., Zare Pour, M. A., Paszuk, A., Ostheimer, D., Shekarabi, S., Romanyuk, O., Moritz, D. C., Hofmann, J. P., Jaegermann, W., Hannappel, T., &#38; Schmidt, W. G. (2022). Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic Properties. <i>Physica Status Solidi (b)</i>, <i>259</i>(11), Article 2200308. <a href=\"https://doi.org/10.1002/pssb.202200308\">https://doi.org/10.1002/pssb.202200308</a>","ieee":"L. J. Glahn <i>et al.</i>, “Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic Properties,” <i>physica status solidi (b)</i>, vol. 259, no. 11, Art. no. 2200308, 2022, doi: <a href=\"https://doi.org/10.1002/pssb.202200308\">10.1002/pssb.202200308</a>.","chicago":"Glahn, Luis Joel, Isaac Azahel Ruiz Alvarado, Sergej Neufeld, Mohammad Amin Zare Pour, Agnieszka Paszuk, David Ostheimer, Sahar Shekarabi, et al. “Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic Properties.” <i>Physica Status Solidi (b)</i> 259, no. 11 (2022). <a href=\"https://doi.org/10.1002/pssb.202200308\">https://doi.org/10.1002/pssb.202200308</a>.","short":"L.J. Glahn, I.A. Ruiz Alvarado, S. Neufeld, M.A. Zare Pour, A. Paszuk, D. Ostheimer, S. Shekarabi, O. Romanyuk, D.C. Moritz, J.P. Hofmann, W. Jaegermann, T. Hannappel, W.G. Schmidt, Physica Status Solidi (b) 259 (2022)."},"intvolume":"       259","date_updated":"2023-04-20T13:59:01Z","publication_status":"published","author":[{"last_name":"Glahn","first_name":"Luis Joel","full_name":"Glahn, Luis Joel"},{"full_name":"Ruiz Alvarado, Isaac Azahel","orcid":"0000-0002-4710-1170","last_name":"Ruiz Alvarado","first_name":"Isaac Azahel","id":"79462"},{"last_name":"Neufeld","first_name":"Sergej","full_name":"Neufeld, Sergej"},{"first_name":"Mohammad Amin","last_name":"Zare Pour","full_name":"Zare Pour, Mohammad Amin"},{"first_name":"Agnieszka","last_name":"Paszuk","full_name":"Paszuk, Agnieszka"},{"last_name":"Ostheimer","first_name":"David","full_name":"Ostheimer, David"},{"first_name":"Sahar","last_name":"Shekarabi","full_name":"Shekarabi, Sahar"},{"full_name":"Romanyuk, Oleksandr","first_name":"Oleksandr","last_name":"Romanyuk"},{"first_name":"Dominik Christian","last_name":"Moritz","full_name":"Moritz, Dominik Christian"},{"full_name":"Hofmann, Jan Philipp","first_name":"Jan Philipp","last_name":"Hofmann"},{"last_name":"Jaegermann","first_name":"Wolfram","full_name":"Jaegermann, Wolfram"},{"first_name":"Thomas","last_name":"Hannappel","full_name":"Hannappel, Thomas"},{"id":"468","full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt","first_name":"Wolf Gero"}],"publication_identifier":{"issn":["0370-1972","1521-3951"]},"year":"2022","title":"Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic Properties","doi":"10.1002/pssb.202200308","language":[{"iso":"eng"}],"article_number":"2200308","publication":"physica status solidi (b)","issue":"11","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"230"},{"_id":"35"}],"keyword":["Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","date_created":"2023-01-20T09:19:43Z"},{"status":"public","publisher":"Wiley","_id":"40244","volume":259,"user_id":"16199","citation":{"ama":"Meier L, Schmidt WG. GaInP/AlInP(001) Interfaces from Density Functional Theory. <i>physica status solidi (b)</i>. 2021;259(1). doi:<a href=\"https://doi.org/10.1002/pssb.202100462\">10.1002/pssb.202100462</a>","bibtex":"@article{Meier_Schmidt_2021, title={GaInP/AlInP(001) Interfaces from Density Functional Theory}, volume={259}, DOI={<a href=\"https://doi.org/10.1002/pssb.202100462\">10.1002/pssb.202100462</a>}, number={12100462}, journal={physica status solidi (b)}, publisher={Wiley}, author={Meier, Lukas and Schmidt, Wolf Gero}, year={2021} }","mla":"Meier, Lukas, and Wolf Gero Schmidt. “GaInP/AlInP(001) Interfaces from Density Functional Theory.” <i>Physica Status Solidi (b)</i>, vol. 259, no. 1, 2100462, Wiley, 2021, doi:<a href=\"https://doi.org/10.1002/pssb.202100462\">10.1002/pssb.202100462</a>.","short":"L. Meier, W.G. Schmidt, Physica Status Solidi (b) 259 (2021).","chicago":"Meier, Lukas, and Wolf Gero Schmidt. “GaInP/AlInP(001) Interfaces from Density Functional Theory.” <i>Physica Status Solidi (b)</i> 259, no. 1 (2021). <a href=\"https://doi.org/10.1002/pssb.202100462\">https://doi.org/10.1002/pssb.202100462</a>.","apa":"Meier, L., &#38; Schmidt, W. G. (2021). GaInP/AlInP(001) Interfaces from Density Functional Theory. <i>Physica Status Solidi (b)</i>, <i>259</i>(1), Article 2100462. <a href=\"https://doi.org/10.1002/pssb.202100462\">https://doi.org/10.1002/pssb.202100462</a>","ieee":"L. Meier and W. G. 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Gerlach, Dirk Reuter, and Donat Josef As. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N.” <i>Physica Status Solidi (B)</i>, 2020. <a href=\"https://doi.org/10.1002/pssb.201900532\">https://doi.org/10.1002/pssb.201900532</a>.","short":"M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) (2020).","ieee":"M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N,” <i>physica status solidi (b)</i>, 2020.","apa":"Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., &#38; As, D. J. (2020). 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Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N. <i>physica status solidi (b)</i>. 2020. doi:<a href=\"https://doi.org/10.1002/pssb.201900532\">10.1002/pssb.201900532</a>","mla":"Deppe, Michael, et al. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N.” <i>Physica Status Solidi (B)</i>, 1900532, 2020, doi:<a href=\"https://doi.org/10.1002/pssb.201900532\">10.1002/pssb.201900532</a>."},"publication":"physica status solidi (b)"},{"status":"public","_id":"40233","publisher":"Wiley","user_id":"16199","volume":258,"citation":{"ieee":"L. Meier, C. Braun, T. Hannappel, and W. G. 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Band Alignment at Ga            <sub>              <i>x</i>            </sub>            In            <sub>              1–              <i>x</i>            </sub>            P/Al            <sub>              <i>y</i>            </sub>            In            <sub>              1–              <i>y</i>            </sub>            P Alloy Interfaces from Hybrid Density Functional Theory Calculations. <i>Physica Status Solidi (b)</i>, <i>258</i>(2), Article 2000463. <a href=\"https://doi.org/10.1002/pssb.202000463\">https://doi.org/10.1002/pssb.202000463</a>","chicago":"Meier, Lukas, Christian Braun, Thomas Hannappel, and Wolf Gero Schmidt. “Band Alignment at Ga            <sub>              <i>x</i>            </sub>            In            <sub>              1–              <i>x</i>            </sub>            P/Al            <sub>              <i>y</i>            </sub>            In            <sub>              1–              <i>y</i>            </sub>            P Alloy Interfaces from Hybrid Density Functional Theory Calculations.” <i>Physica Status Solidi (b)</i> 258, no. 2 (2020). <a href=\"https://doi.org/10.1002/pssb.202000463\">https://doi.org/10.1002/pssb.202000463</a>.","short":"L. 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Band Alignment at Ga            <sub>              <i>x</i>            </sub>            In            <sub>              1–              <i>x</i>            </sub>            P/Al            <sub>              <i>y</i>            </sub>            In            <sub>              1–              <i>y</i>            </sub>            P Alloy Interfaces from Hybrid Density Functional Theory Calculations. <i>physica status solidi (b)</i>. 2020;258(2). doi:<a href=\"https://doi.org/10.1002/pssb.202000463\">10.1002/pssb.202000463</a>"},"project":[{"_id":"52","name":"PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"year":"2020","title":"Band Alignment at Ga            <sub>              <i>x</i>            </sub>            In            <sub>              1–              <i>x</i>            </sub>            P/Al            <sub>              <i>y</i>            </sub>            In            <sub>              1–              <i>y</i>            </sub>            P Alloy Interfaces from Hybrid Density Functional Theory Calculations","author":[{"full_name":"Meier, Lukas","first_name":"Lukas","last_name":"Meier"},{"first_name":"Christian","last_name":"Braun","full_name":"Braun, Christian"},{"first_name":"Thomas","last_name":"Hannappel","full_name":"Hannappel, Thomas"},{"id":"468","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero"}],"publication_identifier":{"issn":["0370-1972","1521-3951"]},"date_updated":"2023-04-20T14:18:36Z","publication_status":"published","intvolume":"       258","article_number":"2000463","language":[{"iso":"eng"}],"doi":"10.1002/pssb.202000463","publication":"physica status solidi (b)","issue":"2","date_created":"2023-01-26T09:33:46Z","type":"journal_article","keyword":["Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"230"},{"_id":"35"}]},{"date_created":"2020-01-07T10:09:27Z","oa":"1","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","citation":{"chicago":"Deppe, Michael, Tobias Henksmeier, Jürgen W. 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Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. <i>physica status solidi (b)</i>. 2018;255(5). doi:<a href=\"https://doi.org/10.1002/pssb.201700457\">10.1002/pssb.201700457</a>","bibtex":"@article{Blumenthal_Reuter_As_2018, title={Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy}, volume={255}, DOI={<a href=\"https://doi.org/10.1002/pssb.201700457\">10.1002/pssb.201700457</a>}, number={51700457}, journal={physica status solidi (b)}, publisher={Wiley}, author={Blumenthal, Sarah and Reuter, Dirk and As, Donat Josef}, year={2018} }","apa":"Blumenthal, S., Reuter, D., &#38; As, D. J. (2018). Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. <i>Physica Status Solidi (B)</i>, <i>255</i>(5). <a href=\"https://doi.org/10.1002/pssb.201700457\">https://doi.org/10.1002/pssb.201700457</a>","ieee":"S. Blumenthal, D. Reuter, and D. J. As, “Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy,” <i>physica status solidi (b)</i>, vol. 255, no. 5, 2018.","short":"S. Blumenthal, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2018).","chicago":"Blumenthal, Sarah, Dirk Reuter, and Donat Josef As. “Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.” <i>Physica Status Solidi (B)</i> 255, no. 5 (2018). <a href=\"https://doi.org/10.1002/pssb.201700457\">https://doi.org/10.1002/pssb.201700457</a>."},"date_updated":"2022-01-06T07:03:26Z","publication_status":"published","intvolume":"       255","title":"Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy","year":"2018","publication_identifier":{"issn":["0370-1972"]},"author":[{"full_name":"Blumenthal, Sarah","last_name":"Blumenthal","first_name":"Sarah"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"id":"14","full_name":"As, Donat Josef","last_name":"As","first_name":"Donat Josef","orcid":"0000-0003-1121-3565"}],"doi":"10.1002/pssb.201700457","article_number":"1700457","language":[{"iso":"eng"}],"publication":"physica status solidi (b)","issue":"5","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-01-28T09:40:01Z"},{"status":"public","user_id":"14931","volume":255,"page":"1600729","_id":"20588","project":[{"name":"TRR 142","grant_number":"231447078","_id":"53"},{"_id":"54","name":"TRR 142 - Project Area A"},{"grant_number":"231447078","_id":"63","name":"TRR 142 - Subproject A6"}],"citation":{"chicago":"Blumenthal, Sarah, Torsten Rieger, Doris Meertens, Alexander Pawlis, Dirk Reuter, and Donat Josef As. “Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.” <i>Physica Status Solidi (b)</i> 255, no. 3 (2018): 1600729. <a href=\"https://doi.org/10.1002/pssb.201600729\">https://doi.org/10.1002/pssb.201600729</a>.","short":"S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, D.J. As, Physica Status Solidi (b) 255 (2018) 1600729.","ama":"Blumenthal S, Rieger T, Meertens D, Pawlis A, Reuter D, As DJ. Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. <i>physica status solidi (b)</i>. 2018;255(3):1600729. doi:<a href=\"https://doi.org/10.1002/pssb.201600729\">https://doi.org/10.1002/pssb.201600729</a>","bibtex":"@article{Blumenthal_Rieger_Meertens_Pawlis_Reuter_As_2018, title={Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy}, volume={255}, DOI={<a href=\"https://doi.org/10.1002/pssb.201600729\">https://doi.org/10.1002/pssb.201600729</a>}, number={3}, journal={physica status solidi (b)}, author={Blumenthal, Sarah and Rieger, Torsten and Meertens, Doris and Pawlis, Alexander and Reuter, Dirk and As, Donat Josef}, year={2018}, pages={1600729} }","apa":"Blumenthal, S., Rieger, T., Meertens, D., Pawlis, A., Reuter, D., &#38; As, D. J. (2018). Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. <i>Physica Status Solidi (b)</i>, <i>255</i>(3), 1600729. <a href=\"https://doi.org/10.1002/pssb.201600729\">https://doi.org/10.1002/pssb.201600729</a>","mla":"Blumenthal, Sarah, et al. “Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.” <i>Physica Status Solidi (b)</i>, vol. 255, no. 3, 2018, p. 1600729, doi:<a href=\"https://doi.org/10.1002/pssb.201600729\">https://doi.org/10.1002/pssb.201600729</a>.","ieee":"S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, and D. J. As, “Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy,” <i>physica status solidi (b)</i>, vol. 255, no. 3, p. 1600729, 2018, doi: <a href=\"https://doi.org/10.1002/pssb.201600729\">https://doi.org/10.1002/pssb.201600729</a>."},"date_updated":"2023-10-09T09:19:40Z","publication_status":"published","intvolume":"       255","article_type":"original","title":"Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy","year":"2018","author":[{"last_name":"Blumenthal","first_name":"Sarah","full_name":"Blumenthal, Sarah"},{"full_name":"Rieger, Torsten","last_name":"Rieger","first_name":"Torsten"},{"first_name":"Doris","last_name":"Meertens","full_name":"Meertens, Doris"},{"full_name":"Pawlis, Alexander","first_name":"Alexander","last_name":"Pawlis"},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"id":"14","last_name":"As","orcid":"0000-0003-1121-3565","first_name":"Donat Josef","full_name":"As, Donat Josef"}],"publication_identifier":{"issn":["0370-1972"]},"doi":"https://doi.org/10.1002/pssb.201600729","language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"We have investigated the stacking of self-assembled cubic GaN quantum dots (QDs) grown in Stranski–Krastanov (SK) growth mode. The number of stacked layers is varied to compare their optical properties. The growth is in situ controlled by reflection high energy electron diffraction to prove the SK QD growth. Atomic force and transmission electron microscopy show the existence of wetting layer and QDs with a diameter of about 10 nm and a height of about 2 nm. The QDs have a truncated pyramidal form and are vertically aligned in growth direction. Photoluminescence measurements show an increase of the intensity with increasing number of stacked QD layers. Furthermore, a systematic blue-shift of 120 meV is observed with increasing number of stacked QD layers. This blueshift derives from a decrease in the QD height, because the QD height has also been the main confining dimension in our QDs."}],"issue":"3","publication":"physica status solidi (b)","keyword":["cubic crystals","GaN","molecular beam epitaxy","quantum dots"],"type":"journal_article","department":[{"_id":"230"},{"_id":"429"}],"date_created":"2020-12-02T09:38:00Z"},{"language":[{"iso":"eng"}],"_id":"17065","article_number":"1800314","doi":"10.1002/pssb.201800314","user_id":"16199","publication_identifier":{"issn":["0370-1972","1521-3951"]},"author":[{"full_name":"Esser, Norbert","last_name":"Esser","first_name":"Norbert"},{"last_name":"Schmidt","first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","full_name":"Schmidt, Wolf Gero","id":"468"}],"status":"public","year":"2018","title":"Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution","date_updated":"2025-12-16T11:30:05Z","publication_status":"published","date_created":"2020-05-29T09:48:41Z","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"27"},{"_id":"230"},{"_id":"429"}],"type":"journal_article","citation":{"bibtex":"@article{Esser_Schmidt_2018, title={Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution}, DOI={<a href=\"https://doi.org/10.1002/pssb.201800314\">10.1002/pssb.201800314</a>}, number={2561800314}, journal={physica status solidi (b)}, author={Esser, Norbert and Schmidt, Wolf Gero}, year={2018} }","chicago":"Esser, Norbert, and Wolf Gero Schmidt. “Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution.” <i>Physica Status Solidi (b)</i>, no. 256 (2018). <a href=\"https://doi.org/10.1002/pssb.201800314\">https://doi.org/10.1002/pssb.201800314</a>.","ama":"Esser N, Schmidt WG. Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution. <i>physica status solidi (b)</i>. 2018;(256). doi:<a href=\"https://doi.org/10.1002/pssb.201800314\">10.1002/pssb.201800314</a>","short":"N. Esser, W.G. Schmidt, Physica Status Solidi (b) (2018).","ieee":"N. Esser and W. G. Schmidt, “Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution,” <i>physica status solidi (b)</i>, no. 256, Art. no. 1800314, 2018, doi: <a href=\"https://doi.org/10.1002/pssb.201800314\">10.1002/pssb.201800314</a>.","mla":"Esser, Norbert, and Wolf Gero Schmidt. “Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution.” <i>Physica Status Solidi (b)</i>, no. 256, 1800314, 2018, doi:<a href=\"https://doi.org/10.1002/pssb.201800314\">10.1002/pssb.201800314</a>.","apa":"Esser, N., &#38; Schmidt, W. G. (2018). Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution. <i>Physica Status Solidi (b)</i>, <i>256</i>, Article 1800314. <a href=\"https://doi.org/10.1002/pssb.201800314\">https://doi.org/10.1002/pssb.201800314</a>"},"issue":"256","publication":"physica status solidi (b)","project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"},{"_id":"52","name":"PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing"},{"_id":"53","name":"TRR 142: TRR 142"},{"_id":"55","name":"TRR 142 - B: TRR 142 - Project Area B"},{"name":"TRR 142 - B4: TRR 142 - Subproject B4","_id":"69"}]},{"date_created":"2018-10-24T07:59:23Z","type":"journal_article","issue":"5","publication":"physica status solidi (b)","citation":{"short":"T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2017).","chicago":"Wecker, Tobias, Gordon Callsen, Axel Hoffmann, Dirk Reuter, and Donat Josef As. “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells.” <i>Physica Status Solidi (B)</i> 255, no. 5 (2017). <a href=\"https://doi.org/10.1002/pssb.201700373\">https://doi.org/10.1002/pssb.201700373</a>.","apa":"Wecker, T., Callsen, G., Hoffmann, A., Reuter, D., &#38; As, D. J. (2017). Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells. <i>Physica Status Solidi (B)</i>, <i>255</i>(5). <a href=\"https://doi.org/10.1002/pssb.201700373\">https://doi.org/10.1002/pssb.201700373</a>","ieee":"T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, and D. J. As, “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells,” <i>physica status solidi (b)</i>, vol. 255, no. 5, 2017.","ama":"Wecker T, Callsen G, Hoffmann A, Reuter D, As DJ. Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells. <i>physica status solidi (b)</i>. 2017;255(5). doi:<a href=\"https://doi.org/10.1002/pssb.201700373\">10.1002/pssb.201700373</a>","bibtex":"@article{Wecker_Callsen_Hoffmann_Reuter_As_2017, title={Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells}, volume={255}, DOI={<a href=\"https://doi.org/10.1002/pssb.201700373\">10.1002/pssb.201700373</a>}, number={51700373}, journal={physica status solidi (b)}, publisher={Wiley}, author={Wecker, Tobias and Callsen, Gordon and Hoffmann, Axel and Reuter, Dirk and As, Donat Josef}, year={2017} }","mla":"Wecker, Tobias, et al. “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells.” <i>Physica Status Solidi (B)</i>, vol. 255, no. 5, 1700373, Wiley, 2017, doi:<a href=\"https://doi.org/10.1002/pssb.201700373\">10.1002/pssb.201700373</a>."},"article_number":"1700373","_id":"4808","publisher":"Wiley","user_id":"14","doi":"10.1002/pssb.201700373","volume":255,"status":"public","year":"2017","title":"Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells","publication_identifier":{"issn":["0370-1972"]},"author":[{"full_name":"Wecker, Tobias","last_name":"Wecker","first_name":"Tobias"},{"full_name":"Callsen, Gordon","first_name":"Gordon","last_name":"Callsen"},{"first_name":"Axel","last_name":"Hoffmann","full_name":"Hoffmann, Axel"},{"id":"37763","last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk"},{"full_name":"As, Donat Josef","orcid":"0000-0003-1121-3565","first_name":"Donat Josef","last_name":"As","id":"14"}],"publication_status":"published","date_updated":"2022-01-06T07:01:24Z","intvolume":"       255"},{"type":"journal_article","date_created":"2018-10-24T08:02:51Z","publication":"physica status solidi (b)","issue":"8","citation":{"short":"M. Deppe, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) 254 (2017).","chicago":"Deppe, Michael, Jürgen W. Gerlach, Dirk Reuter, and Donat Josef As. “Incorporation of Germanium for N-Type Doping of Cubic GaN.” <i>Physica Status Solidi (B)</i> 254, no. 8 (2017). <a href=\"https://doi.org/10.1002/pssb.201600700\">https://doi.org/10.1002/pssb.201600700</a>.","apa":"Deppe, M., Gerlach, J. W., Reuter, D., &#38; As, D. J. (2017). Incorporation of germanium for n-type doping of cubic GaN. <i>Physica Status Solidi (B)</i>, <i>254</i>(8). <a href=\"https://doi.org/10.1002/pssb.201600700\">https://doi.org/10.1002/pssb.201600700</a>","ieee":"M. Deppe, J. W. Gerlach, D. Reuter, and D. J. As, “Incorporation of germanium for n-type doping of cubic GaN,” <i>physica status solidi (b)</i>, vol. 254, no. 8, 2017.","ama":"Deppe M, Gerlach JW, Reuter D, As DJ. Incorporation of germanium for n-type doping of cubic GaN. <i>physica status solidi (b)</i>. 2017;254(8). doi:<a href=\"https://doi.org/10.1002/pssb.201600700\">10.1002/pssb.201600700</a>","bibtex":"@article{Deppe_Gerlach_Reuter_As_2017, title={Incorporation of germanium for n-type doping of cubic GaN}, volume={254}, DOI={<a href=\"https://doi.org/10.1002/pssb.201600700\">10.1002/pssb.201600700</a>}, number={81600700}, journal={physica status solidi (b)}, publisher={Wiley}, author={Deppe, Michael and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat Josef}, year={2017} }","mla":"Deppe, Michael, et al. “Incorporation of Germanium for N-Type Doping of Cubic GaN.” <i>Physica Status Solidi (B)</i>, vol. 254, no. 8, 1600700, Wiley, 2017, doi:<a href=\"https://doi.org/10.1002/pssb.201600700\">10.1002/pssb.201600700</a>."},"doi":"10.1002/pssb.201600700","user_id":"14","volume":254,"article_number":"1600700","_id":"4811","publisher":"Wiley","date_updated":"2022-01-06T07:01:25Z","publication_status":"published","intvolume":"       254","status":"public","year":"2017","title":"Incorporation of germanium for n-type doping of cubic GaN","publication_identifier":{"issn":["0370-1972"]},"author":[{"full_name":"Deppe, Michael","first_name":"Michael","last_name":"Deppe"},{"full_name":"Gerlach, Jürgen W.","first_name":"Jürgen W.","last_name":"Gerlach"},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"id":"14","full_name":"As, Donat Josef","orcid":"0000-0003-1121-3565","first_name":"Donat Josef","last_name":"As"}]},{"article_type":"original","intvolume":"       253","publication_status":"published","date_updated":"2023-10-09T08:48:35Z","publication_identifier":{"issn":["0370-1972"]},"author":[{"id":"22501","orcid":"0000-0003-4682-4577","first_name":"Michael","last_name":"Rüsing","full_name":"Rüsing, Michael"},{"full_name":"Wecker, T.","last_name":"Wecker","first_name":"T."},{"id":"53","full_name":"Berth, Gerhard","first_name":"Gerhard","last_name":"Berth"},{"id":"14","full_name":"As, Donat Josef","last_name":"As","orcid":"0000-0003-1121-3565","first_name":"Donat Josef"},{"full_name":"Zrenner, Artur","orcid":"0000-0002-5190-0944","last_name":"Zrenner","first_name":"Artur","id":"606"}],"title":"Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC","year":"2016","doi":"10.1002/pssb.201552592","language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"Cubic gallium nitride (GaN) films are analyzed with highresolution X-ray diffraction (HRXRD) and Raman spectroscopy. Several cubic GaN layers were grown on 3C-SiC (001) substrate by radio-frequency plasma-assisted molecular beam epitaxy. The layer thickness of the cubic GaN was varied between 75 and 505 nm. The HRXRD analysis reveals a reduction of the full-width at half-maximum (FWHM) of omega scans for growing layer thicknesses, which is caused by a partial compensation of defects. The Raman characterization confirms well-formed c-GaN layers. A more detailed examination of the longitudinal optical mode hints at a correlation of the FWHM of the Raman mode with the dislocation density, which shows the possibility to determine dislocation densities by Ramanspectroscopy on a micrometer scale, which is not possible by HRXRD. Furthermore, this Raman analysis shows that normalized Raman spectra present an alternative way to determine layer thicknesses of thin GaN films."}],"issue":"4","publication":"physica status solidi (b)","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"type":"journal_article","keyword":["cubic gallium nitride","dislocation density","HRXRD","Raman spectroscopy"],"date_created":"2018-08-29T08:24:01Z","status":"public","volume":253,"user_id":"14931","_id":"4240","publisher":"Wiley","page":"778-782","project":[{"name":"TRR 142","_id":"53","grant_number":"231447078"},{"name":"TRR 142 - Project Area B","_id":"55"},{"name":"TRR 142 - Subproject B3","_id":"68","grant_number":"231447078"}],"citation":{"chicago":"Rüsing, Michael, T. Wecker, Gerhard Berth, Donat Josef As, and Artur Zrenner. “Joint Raman Spectroscopy and HRXRD Investigation of Cubic Gallium Nitride Layers Grown on 3C-SiC.” <i>Physica Status Solidi (b)</i> 253, no. 4 (2016): 778–82. <a href=\"https://doi.org/10.1002/pssb.201552592\">https://doi.org/10.1002/pssb.201552592</a>.","short":"M. Rüsing, T. Wecker, G. Berth, D.J. As, A. Zrenner, Physica Status Solidi (b) 253 (2016) 778–782.","apa":"Rüsing, M., Wecker, T., Berth, G., As, D. J., &#38; Zrenner, A. (2016). Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC. <i>Physica Status Solidi (b)</i>, <i>253</i>(4), 778–782. <a href=\"https://doi.org/10.1002/pssb.201552592\">https://doi.org/10.1002/pssb.201552592</a>","ieee":"M. Rüsing, T. Wecker, G. Berth, D. J. As, and A. Zrenner, “Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC,” <i>physica status solidi (b)</i>, vol. 253, no. 4, pp. 778–782, 2016, doi: <a href=\"https://doi.org/10.1002/pssb.201552592\">10.1002/pssb.201552592</a>.","ama":"Rüsing M, Wecker T, Berth G, As DJ, Zrenner A. Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC. <i>physica status solidi (b)</i>. 2016;253(4):778-782. doi:<a href=\"https://doi.org/10.1002/pssb.201552592\">10.1002/pssb.201552592</a>","bibtex":"@article{Rüsing_Wecker_Berth_As_Zrenner_2016, title={Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC}, volume={253}, DOI={<a href=\"https://doi.org/10.1002/pssb.201552592\">10.1002/pssb.201552592</a>}, number={4}, journal={physica status solidi (b)}, publisher={Wiley}, author={Rüsing, Michael and Wecker, T. and Berth, Gerhard and As, Donat Josef and Zrenner, Artur}, year={2016}, pages={778–782} }","mla":"Rüsing, Michael, et al. “Joint Raman Spectroscopy and HRXRD Investigation of Cubic Gallium Nitride Layers Grown on 3C-SiC.” <i>Physica Status Solidi (b)</i>, vol. 253, no. 4, Wiley, 2016, pp. 778–82, doi:<a href=\"https://doi.org/10.1002/pssb.201552592\">10.1002/pssb.201552592</a>."}},{"status":"public","has_accepted_license":"1","page":"683-689","_id":"10025","publisher":"Wiley-VCH","ddc":["530"],"user_id":"16199","volume":253,"file_date_updated":"2020-08-30T14:41:39Z","isi":"1","citation":{"mla":"Friedrich, Michael, et al. “LiTaO3 Phonon Dispersion and Ferroelectric Transition Calculated from First Principles.” <i>Physica Status Solidi B</i>, vol. 253, no. 4, Wiley-VCH, 2016, pp. 683–89, doi:<a href=\"https://doi.org/10.1002/pssb.201552576\">10.1002/pssb.201552576</a>.","bibtex":"@article{Friedrich_Schindlmayr_Schmidt_Sanna_2016, title={LiTaO3 phonon dispersion and ferroelectric transition calculated from first principles}, volume={253}, DOI={<a href=\"https://doi.org/10.1002/pssb.201552576\">10.1002/pssb.201552576</a>}, number={4}, journal={Physica Status Solidi B}, publisher={Wiley-VCH}, author={Friedrich, Michael and Schindlmayr, Arno and Schmidt, Wolf Gero and Sanna, Simone}, year={2016}, pages={683–689} }","ama":"Friedrich M, Schindlmayr A, Schmidt WG, Sanna S. LiTaO3 phonon dispersion and ferroelectric transition calculated from first principles. <i>Physica Status Solidi B</i>. 2016;253(4):683-689. doi:<a href=\"https://doi.org/10.1002/pssb.201552576\">10.1002/pssb.201552576</a>","ieee":"M. Friedrich, A. Schindlmayr, W. G. Schmidt, and S. Sanna, “LiTaO3 phonon dispersion and ferroelectric transition calculated from first principles,” <i>Physica Status Solidi B</i>, vol. 253, no. 4, pp. 683–689, 2016, doi: <a href=\"https://doi.org/10.1002/pssb.201552576\">10.1002/pssb.201552576</a>.","apa":"Friedrich, M., Schindlmayr, A., Schmidt, W. G., &#38; Sanna, S. (2016). LiTaO3 phonon dispersion and ferroelectric transition calculated from first principles. <i>Physica Status Solidi B</i>, <i>253</i>(4), 683–689. <a href=\"https://doi.org/10.1002/pssb.201552576\">https://doi.org/10.1002/pssb.201552576</a>","short":"M. Friedrich, A. Schindlmayr, W.G. Schmidt, S. Sanna, Physica Status Solidi B 253 (2016) 683–689.","chicago":"Friedrich, Michael, Arno Schindlmayr, Wolf Gero Schmidt, and Simone Sanna. “LiTaO3 Phonon Dispersion and Ferroelectric Transition Calculated from First Principles.” <i>Physica Status Solidi B</i> 253, no. 4 (2016): 683–89. <a href=\"https://doi.org/10.1002/pssb.201552576\">https://doi.org/10.1002/pssb.201552576</a>."},"quality_controlled":"1","project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"},{"_id":"53","name":"TRR 142"},{"name":"TRR 142 - Project Area B","_id":"55"},{"_id":"69","name":"TRR 142 - Subproject B4"},{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"external_id":{"isi":["000374142500015"]},"title":"LiTaO3 phonon dispersion and ferroelectric transition calculated from first principles","year":"2016","author":[{"full_name":"Friedrich, Michael","first_name":"Michael","last_name":"Friedrich"},{"id":"458","full_name":"Schindlmayr, Arno","orcid":"0000-0002-4855-071X","first_name":"Arno","last_name":"Schindlmayr"},{"full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero","last_name":"Schmidt","id":"468"},{"first_name":"Simone","last_name":"Sanna","full_name":"Sanna, Simone"}],"publication_identifier":{"issn":["0370-1972"],"eissn":["1521-3951"]},"date_updated":"2025-12-05T09:58:55Z","publication_status":"published","intvolume":"       253","article_type":"original","language":[{"iso":"eng"}],"doi":"10.1002/pssb.201552576","issue":"4","publication":"Physica Status Solidi B","abstract":[{"text":"The phonon dispersions of the ferro‐ and paraelectric phase of LiTaO3 are calculated within density‐functional perturbation theory. The longitudinal optical phonon modes are theoretically derived and compared with available experimental data. Our results confirm the recent phonon assignment proposed by Margueron et al. [J. Appl. Phys. 111, 104105 (2012)] on the basis of spectroscopical studies. A comparison with the phonon band structure of the related material LiNbO3 shows minor differences that can be traced to the atomic‐mass difference between Ta and Nb. The presence of phonons with imaginary frequencies for the paraelectric phase suggests that it does not correspond to a minimum energy structure, and is compatible with an order‐disorder type phase transition.","lang":"eng"}],"file":[{"creator":"schindlm","date_created":"2020-08-28T14:22:11Z","description":"© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim","file_name":"pssb.201552576.pdf","access_level":"closed","file_size":402594,"relation":"main_file","date_updated":"2020-08-30T14:41:39Z","file_id":"18577","content_type":"application/pdf","title":"LiTaO3 phonon dispersion and ferroelectric transition calculated from first principles"}],"date_created":"2019-05-29T07:52:52Z","type":"journal_article","department":[{"_id":"295"},{"_id":"296"},{"_id":"230"},{"_id":"429"},{"_id":"15"},{"_id":"35"},{"_id":"27"}]},{"page":"437-441","_id":"22809","language":[{"iso":"eng"}],"user_id":"606","doi":"10.1002/pssb.201552591","year":"2015","status":"public","title":"Spatially indirect transitions in electric field tunable quantum dot diodes","author":[{"last_name":"Rai","first_name":"Ashish K.","full_name":"Rai, Ashish K."},{"full_name":"Gordon, Simon","last_name":"Gordon","first_name":"Simon"},{"full_name":"Ludwig, Arne","first_name":"Arne","last_name":"Ludwig"},{"last_name":"Wieck","first_name":"Andreas D.","full_name":"Wieck, Andreas D."},{"id":"606","last_name":"Zrenner","first_name":"Artur","orcid":"0000-0002-5190-0944","full_name":"Zrenner, Artur"},{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"}],"publication_identifier":{"issn":["0370-1972"]},"publication_status":"published","date_updated":"2022-01-06T06:55:42Z","date_created":"2021-07-26T05:54:56Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"publication":"physica status solidi (b)","citation":{"ieee":"A. K. Rai, S. Gordon, A. Ludwig, A. D. Wieck, A. Zrenner, and D. Reuter, “Spatially indirect transitions in electric field tunable quantum dot diodes,” <i>physica status solidi (b)</i>, pp. 437–441, 2015.","apa":"Rai, A. K., Gordon, S., Ludwig, A., Wieck, A. D., Zrenner, A., &#38; Reuter, D. (2015). Spatially indirect transitions in electric field tunable quantum dot diodes. <i>Physica Status Solidi (B)</i>, 437–441. <a href=\"https://doi.org/10.1002/pssb.201552591\">https://doi.org/10.1002/pssb.201552591</a>","short":"A.K. Rai, S. Gordon, A. Ludwig, A.D. Wieck, A. Zrenner, D. Reuter, Physica Status Solidi (B) (2015) 437–441.","chicago":"Rai, Ashish K., Simon Gordon, Arne Ludwig, Andreas D. Wieck, Artur Zrenner, and Dirk Reuter. “Spatially Indirect Transitions in Electric Field Tunable Quantum Dot Diodes.” <i>Physica Status Solidi (B)</i>, 2015, 437–41. <a href=\"https://doi.org/10.1002/pssb.201552591\">https://doi.org/10.1002/pssb.201552591</a>.","mla":"Rai, Ashish K., et al. “Spatially Indirect Transitions in Electric Field Tunable Quantum Dot Diodes.” <i>Physica Status Solidi (B)</i>, 2015, pp. 437–41, doi:<a href=\"https://doi.org/10.1002/pssb.201552591\">10.1002/pssb.201552591</a>.","bibtex":"@article{Rai_Gordon_Ludwig_Wieck_Zrenner_Reuter_2015, title={Spatially indirect transitions in electric field tunable quantum dot diodes}, DOI={<a href=\"https://doi.org/10.1002/pssb.201552591\">10.1002/pssb.201552591</a>}, journal={physica status solidi (b)}, author={Rai, Ashish K. and Gordon, Simon and Ludwig, Arne and Wieck, Andreas D. and Zrenner, Artur and Reuter, Dirk}, year={2015}, pages={437–441} }","ama":"Rai AK, Gordon S, Ludwig A, Wieck AD, Zrenner A, Reuter D. Spatially indirect transitions in electric field tunable quantum dot diodes. <i>physica status solidi (b)</i>. 2015:437-441. doi:<a href=\"https://doi.org/10.1002/pssb.201552591\">10.1002/pssb.201552591</a>"}},{"volume":253,"user_id":"42514","publisher":"Wiley","_id":"4276","page":"437-441","status":"public","citation":{"mla":"Rai, Ashish K., et al. “Spatially Indirect Transitions in Electric Field Tunable Quantum Dot Diodes.” <i>Physica Status Solidi (B)</i>, vol. 253, no. 3, Wiley, 2015, pp. 437–41, doi:<a href=\"https://doi.org/10.1002/pssb.201552591\">10.1002/pssb.201552591</a>.","bibtex":"@article{Rai_Gordon_Ludwig_Wieck_Zrenner_Reuter_2015, title={Spatially indirect transitions in electric field tunable quantum dot diodes}, volume={253}, DOI={<a href=\"https://doi.org/10.1002/pssb.201552591\">10.1002/pssb.201552591</a>}, number={3}, journal={physica status solidi (b)}, publisher={Wiley}, author={Rai, Ashish K. and Gordon, Simon and Ludwig, Arne and Wieck, Andreas D. and Zrenner, Artur and Reuter, Dirk}, year={2015}, pages={437–441} }","ama":"Rai AK, Gordon S, Ludwig A, Wieck AD, Zrenner A, Reuter D. Spatially indirect transitions in electric field tunable quantum dot diodes. <i>physica status solidi (b)</i>. 2015;253(3):437-441. doi:<a href=\"https://doi.org/10.1002/pssb.201552591\">10.1002/pssb.201552591</a>","ieee":"A. K. Rai, S. Gordon, A. Ludwig, A. D. Wieck, A. Zrenner, and D. Reuter, “Spatially indirect transitions in electric field tunable quantum dot diodes,” <i>physica status solidi (b)</i>, vol. 253, no. 3, pp. 437–441, 2015.","apa":"Rai, A. K., Gordon, S., Ludwig, A., Wieck, A. D., Zrenner, A., &#38; Reuter, D. (2015). Spatially indirect transitions in electric field tunable quantum dot diodes. <i>Physica Status Solidi (B)</i>, <i>253</i>(3), 437–441. <a href=\"https://doi.org/10.1002/pssb.201552591\">https://doi.org/10.1002/pssb.201552591</a>","short":"A.K. Rai, S. Gordon, A. Ludwig, A.D. Wieck, A. Zrenner, D. Reuter, Physica Status Solidi (B) 253 (2015) 437–441.","chicago":"Rai, Ashish K., Simon Gordon, Arne Ludwig, Andreas D. Wieck, Artur Zrenner, and Dirk Reuter. “Spatially Indirect Transitions in Electric Field Tunable Quantum Dot Diodes.” <i>Physica Status Solidi (B)</i> 253, no. 3 (2015): 437–41. <a href=\"https://doi.org/10.1002/pssb.201552591\">https://doi.org/10.1002/pssb.201552591</a>."},"doi":"10.1002/pssb.201552591","language":[{"iso":"eng"}],"intvolume":"       253","article_type":"original","date_updated":"2022-01-06T07:00:46Z","publication_status":"published","publication_identifier":{"issn":["0370-1972"]},"author":[{"last_name":"Rai","first_name":"Ashish K.","full_name":"Rai, Ashish K."},{"full_name":"Gordon, Simon","last_name":"Gordon","first_name":"Simon"},{"full_name":"Ludwig, Arne","last_name":"Ludwig","first_name":"Arne"},{"full_name":"Wieck, Andreas D.","last_name":"Wieck","first_name":"Andreas D."},{"id":"606","orcid":"0000-0002-5190-0944","last_name":"Zrenner","first_name":"Artur","full_name":"Zrenner, Artur"},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"}],"title":"Spatially indirect transitions in electric field tunable quantum dot diodes","year":"2015","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"keyword":["excitons","GaAs","InAs","quantum dots","spatially indirect transitions","Stark shift"],"type":"journal_article","date_created":"2018-08-29T10:03:56Z","abstract":[{"lang":"eng","text":"We analyse an InAs/GaAs-based electric field tunable single quantum dot diode with a thin tunnelling barrier between a\r\nburied n þ -back contact and a quantum dot layer. In voltage- dependent photoluminescence measurements, we observe rich signatures from spatially direct and indirect transitions from the wetting layer and from a single quantum dot. By analysing the Stark effect, we show that the indirect transitions result from a recombination between confined holes in the wetting or quantum dot layer with electrons from the edge of the Fermi sea in the back contact. Using a 17 nm tunnel barrier which provides comparably weak tunnel coupling allowed us to observe clear signatures of direct and corresponding indirect lines for a series of neutral and positively charged quantum dot states."}],"publication":"physica status solidi (b)","issue":"3"},{"publication_identifier":{"issn":["0370-1972"]},"author":[{"first_name":"T.","last_name":"Wecker","full_name":"Wecker, T."},{"full_name":"Hörich, F.","first_name":"F.","last_name":"Hörich"},{"full_name":"Feneberg, M.","first_name":"M.","last_name":"Feneberg"},{"full_name":"Goldhahn, R.","last_name":"Goldhahn","first_name":"R."},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"orcid":"0000-0003-1121-3565","first_name":"Donat Josef","last_name":"As","full_name":"As, Donat Josef","id":"14"}],"year":"2014","status":"public","title":"Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells","intvolume":"       252","date_updated":"2022-01-06T07:01:25Z","publication_status":"published","_id":"4824","publisher":"Wiley","language":[{"iso":"eng"}],"page":"873-878","volume":252,"doi":"10.1002/pssb.201451531","user_id":"42514","citation":{"apa":"Wecker, T., Hörich, F., Feneberg, M., Goldhahn, R., Reuter, D., &#38; As, D. J. (2014). Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells. <i>Physica Status Solidi (B)</i>, <i>252</i>(5), 873–878. <a href=\"https://doi.org/10.1002/pssb.201451531\">https://doi.org/10.1002/pssb.201451531</a>","ieee":"T. Wecker, F. Hörich, M. Feneberg, R. Goldhahn, D. Reuter, and D. J. As, “Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells,” <i>physica status solidi (b)</i>, vol. 252, no. 5, pp. 873–878, 2014.","short":"T. Wecker, F. Hörich, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, Physica Status Solidi (B) 252 (2014) 873–878.","chicago":"Wecker, T., F. Hörich, M. Feneberg, R. Goldhahn, Dirk Reuter, and Donat Josef As. “Structural and Optical Properties of MBE-Grown Asymmetric Cubic GaN/AlxGa1-XN Double Quantum Wells.” <i>Physica Status Solidi (B)</i> 252, no. 5 (2014): 873–78. <a href=\"https://doi.org/10.1002/pssb.201451531\">https://doi.org/10.1002/pssb.201451531</a>.","mla":"Wecker, T., et al. “Structural and Optical Properties of MBE-Grown Asymmetric Cubic GaN/AlxGa1-XN Double Quantum Wells.” <i>Physica Status Solidi (B)</i>, vol. 252, no. 5, Wiley, 2014, pp. 873–78, doi:<a href=\"https://doi.org/10.1002/pssb.201451531\">10.1002/pssb.201451531</a>.","ama":"Wecker T, Hörich F, Feneberg M, Goldhahn R, Reuter D, As DJ. Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells. <i>physica status solidi (b)</i>. 2014;252(5):873-878. doi:<a href=\"https://doi.org/10.1002/pssb.201451531\">10.1002/pssb.201451531</a>","bibtex":"@article{Wecker_Hörich_Feneberg_Goldhahn_Reuter_As_2014, title={Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells}, volume={252}, DOI={<a href=\"https://doi.org/10.1002/pssb.201451531\">10.1002/pssb.201451531</a>}, number={5}, journal={physica status solidi (b)}, publisher={Wiley}, author={Wecker, T. and Hörich, F. and Feneberg, M. and Goldhahn, R. and Reuter, Dirk and As, Donat Josef}, year={2014}, pages={873–878} }"},"publication":"physica status solidi (b)","issue":"5","date_created":"2018-10-24T08:59:33Z","type":"journal_article"}]