---
_id: '46132'
author:
- first_name: Mario
full_name: Littmann, Mario
last_name: Littmann
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Littmann M, Reuter D, As DJ. Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered
3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy. physica status
solidi (b). 2023;260(7). doi:10.1002/pssb.202300034
apa: Littmann, M., Reuter, D., & As, D. J. (2023). Remote Epitaxy of Cubic Gallium
Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam
Epitaxy. Physica Status Solidi (b), 260(7). https://doi.org/10.1002/pssb.202300034
bibtex: '@article{Littmann_Reuter_As_2023, title={Remote Epitaxy of Cubic Gallium
Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam
Epitaxy}, volume={260}, DOI={10.1002/pssb.202300034},
number={7}, journal={physica status solidi (b)}, publisher={Wiley}, author={Littmann,
Mario and Reuter, Dirk and As, Donat Josef}, year={2023} }'
chicago: Littmann, Mario, Dirk Reuter, and Donat Josef As. “Remote Epitaxy of Cubic
Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular
Beam Epitaxy.” Physica Status Solidi (b) 260, no. 7 (2023). https://doi.org/10.1002/pssb.202300034.
ieee: 'M. Littmann, D. Reuter, and D. J. As, “Remote Epitaxy of Cubic Gallium Nitride
on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy,”
physica status solidi (b), vol. 260, no. 7, 2023, doi: 10.1002/pssb.202300034.'
mla: Littmann, Mario, et al. “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered
3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy.” Physica Status
Solidi (b), vol. 260, no. 7, Wiley, 2023, doi:10.1002/pssb.202300034.
short: M. Littmann, D. Reuter, D.J. As, Physica Status Solidi (b) 260 (2023).
date_created: 2023-07-25T08:06:13Z
date_updated: 2023-07-25T08:07:20Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssb.202300034
intvolume: ' 260'
issue: '7'
keyword:
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
publisher: Wiley
status: public
title: Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates
by Plasma‐Assisted Molecular Beam Epitaxy
type: journal_article
user_id: '42514'
volume: 260
year: '2023'
...
---
_id: '35232'
article_number: '2200508'
author:
- first_name: Falco
full_name: Meier, Falco
last_name: Meier
- first_name: Mario
full_name: Littmann, Mario
last_name: Littmann
- first_name: Julius
full_name: Bürger, Julius
id: '46952'
last_name: Bürger
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Daniel
full_name: Kool, Daniel
id: '44586'
last_name: Kool
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Meier F, Littmann M, Bürger J, et al. Selective Area Growth of Cubic Gallium
Nitride in Nanoscopic Silicon Dioxide Masks. physica status solidi (b).
Published online 2022. doi:10.1002/pssb.202200508
apa: Meier, F., Littmann, M., Bürger, J., Riedl, T., Kool, D., Lindner, J., Reuter,
D., & As, D. J. (2022). Selective Area Growth of Cubic Gallium Nitride in
Nanoscopic Silicon Dioxide Masks. Physica Status Solidi (b), Article 2200508.
https://doi.org/10.1002/pssb.202200508
bibtex: '@article{Meier_Littmann_Bürger_Riedl_Kool_Lindner_Reuter_As_2022, title={Selective
Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks}, DOI={10.1002/pssb.202200508}, number={2200508},
journal={physica status solidi (b)}, publisher={Wiley}, author={Meier, Falco and
Littmann, Mario and Bürger, Julius and Riedl, Thomas and Kool, Daniel and Lindner,
Jörg and Reuter, Dirk and As, Donat Josef}, year={2022} }'
chicago: Meier, Falco, Mario Littmann, Julius Bürger, Thomas Riedl, Daniel Kool,
Jörg Lindner, Dirk Reuter, and Donat Josef As. “Selective Area Growth of Cubic
Gallium Nitride in Nanoscopic Silicon Dioxide Masks.” Physica Status Solidi
(b), 2022. https://doi.org/10.1002/pssb.202200508.
ieee: 'F. Meier et al., “Selective Area Growth of Cubic Gallium Nitride in
Nanoscopic Silicon Dioxide Masks,” physica status solidi (b), Art. no.
2200508, 2022, doi: 10.1002/pssb.202200508.'
mla: Meier, Falco, et al. “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic
Silicon Dioxide Masks.” Physica Status Solidi (b), 2200508, Wiley, 2022,
doi:10.1002/pssb.202200508.
short: F. Meier, M. Littmann, J. Bürger, T. Riedl, D. Kool, J. Lindner, D. Reuter,
D.J. As, Physica Status Solidi (b) (2022).
date_created: 2023-01-04T14:51:51Z
date_updated: 2023-01-04T14:53:24Z
department:
- _id: '15'
doi: 10.1002/pssb.202200508
keyword:
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
publisher: Wiley
status: public
title: Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide
Masks
type: journal_article
user_id: '77496'
year: '2022'
...
---
_id: '54849'
abstract:
- lang: eng
text: The third‐order susceptibility of lithium
niobate (LiNbO3) is calculated within a Berry‐phase formulation
of the dynamical polarization based on the electronic structure obtained within
density‐functional theory (DFT). Maximum values of the order of m V are calculated
for photon energies between 1.2 and 2 eV, i.e., in the lower half of the optical
bandgap of lithium niobate. Both free and bound electron (bi)polarons are found
to lead to a remarkable enhancement of the third‐order susceptibility for photon
energies below 1 eV.
author:
- first_name: Agnieszka L.
full_name: Kozub, Agnieszka L.
last_name: Kozub
- first_name: Uwe
full_name: Gerstmann, Uwe
id: '171'
last_name: Gerstmann
orcid: 0000-0002-4476-223X
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
citation:
ama: 'Kozub AL, Gerstmann U, Schmidt WG. Third‐Order Susceptibility of Lithium Niobate:
Influence of Polarons and Bipolarons. physica status solidi (b). 2022;260(2).
doi:10.1002/pssb.202200453'
apa: 'Kozub, A. L., Gerstmann, U., & Schmidt, W. G. (2022). Third‐Order Susceptibility
of Lithium Niobate: Influence of Polarons and Bipolarons. Physica Status Solidi
(b), 260(2). https://doi.org/10.1002/pssb.202200453'
bibtex: '@article{Kozub_Gerstmann_Schmidt_2022, title={Third‐Order Susceptibility
of Lithium Niobate: Influence of Polarons and Bipolarons}, volume={260}, DOI={10.1002/pssb.202200453}, number={2},
journal={physica status solidi (b)}, publisher={Wiley}, author={Kozub, Agnieszka
L. and Gerstmann, Uwe and Schmidt, Wolf Gero}, year={2022} }'
chicago: 'Kozub, Agnieszka L., Uwe Gerstmann, and Wolf Gero Schmidt. “Third‐Order
Susceptibility of Lithium Niobate: Influence of Polarons and Bipolarons.” Physica
Status Solidi (b) 260, no. 2 (2022). https://doi.org/10.1002/pssb.202200453.'
ieee: 'A. L. Kozub, U. Gerstmann, and W. G. Schmidt, “Third‐Order Susceptibility
of Lithium Niobate: Influence of Polarons and Bipolarons,” physica status solidi
(b), vol. 260, no. 2, 2022, doi: 10.1002/pssb.202200453.'
mla: 'Kozub, Agnieszka L., et al. “Third‐Order Susceptibility of Lithium Niobate:
Influence of Polarons and Bipolarons.” Physica Status Solidi (b), vol.
260, no. 2, Wiley, 2022, doi:10.1002/pssb.202200453.'
short: A.L. Kozub, U. Gerstmann, W.G. Schmidt, Physica Status Solidi (b) 260 (2022).
date_created: 2024-06-24T05:59:11Z
date_updated: 2024-06-24T06:02:58Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '790'
- _id: '230'
- _id: '429'
- _id: '27'
doi: 10.1002/pssb.202200453
intvolume: ' 260'
issue: '2'
language:
- iso: eng
project:
- _id: '53'
grant_number: '231447078'
name: 'TRR 142: TRR 142 - Maßgeschneiderte nichtlineare Photonik: Von grundlegenden
Konzepten zu funktionellen Strukturen'
- _id: '55'
name: 'TRR 142 - B: TRR 142 - Project Area B'
- _id: '52'
name: 'PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing'
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
publisher: Wiley
status: public
title: 'Third‐Order Susceptibility of Lithium Niobate: Influence of Polarons and Bipolarons'
type: journal_article
user_id: '16199'
volume: 260
year: '2022'
...
---
_id: '37656'
article_number: '2200308'
author:
- first_name: Luis Joel
full_name: Glahn, Luis Joel
last_name: Glahn
- first_name: Isaac Azahel
full_name: Ruiz Alvarado, Isaac Azahel
id: '79462'
last_name: Ruiz Alvarado
orcid: 0000-0002-4710-1170
- first_name: Sergej
full_name: Neufeld, Sergej
last_name: Neufeld
- first_name: Mohammad Amin
full_name: Zare Pour, Mohammad Amin
last_name: Zare Pour
- first_name: Agnieszka
full_name: Paszuk, Agnieszka
last_name: Paszuk
- first_name: David
full_name: Ostheimer, David
last_name: Ostheimer
- first_name: Sahar
full_name: Shekarabi, Sahar
last_name: Shekarabi
- first_name: Oleksandr
full_name: Romanyuk, Oleksandr
last_name: Romanyuk
- first_name: Dominik Christian
full_name: Moritz, Dominik Christian
last_name: Moritz
- first_name: Jan Philipp
full_name: Hofmann, Jan Philipp
last_name: Hofmann
- first_name: Wolfram
full_name: Jaegermann, Wolfram
last_name: Jaegermann
- first_name: Thomas
full_name: Hannappel, Thomas
last_name: Hannappel
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
citation:
ama: 'Glahn LJ, Ruiz Alvarado IA, Neufeld S, et al. Clean and Hydrogen‐Adsorbed
AlInP(001) Surfaces: Structures and Electronic Properties. physica status solidi
(b). 2022;259(11). doi:10.1002/pssb.202200308'
apa: 'Glahn, L. J., Ruiz Alvarado, I. A., Neufeld, S., Zare Pour, M. A., Paszuk,
A., Ostheimer, D., Shekarabi, S., Romanyuk, O., Moritz, D. C., Hofmann, J. P.,
Jaegermann, W., Hannappel, T., & Schmidt, W. G. (2022). Clean and Hydrogen‐Adsorbed
AlInP(001) Surfaces: Structures and Electronic Properties. Physica Status Solidi
(b), 259(11), Article 2200308. https://doi.org/10.1002/pssb.202200308'
bibtex: '@article{Glahn_Ruiz Alvarado_Neufeld_Zare Pour_Paszuk_Ostheimer_Shekarabi_Romanyuk_Moritz_Hofmann_et
al._2022, title={Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and
Electronic Properties}, volume={259}, DOI={10.1002/pssb.202200308},
number={112200308}, journal={physica status solidi (b)}, publisher={Wiley}, author={Glahn,
Luis Joel and Ruiz Alvarado, Isaac Azahel and Neufeld, Sergej and Zare Pour, Mohammad
Amin and Paszuk, Agnieszka and Ostheimer, David and Shekarabi, Sahar and Romanyuk,
Oleksandr and Moritz, Dominik Christian and Hofmann, Jan Philipp and et al.},
year={2022} }'
chicago: 'Glahn, Luis Joel, Isaac Azahel Ruiz Alvarado, Sergej Neufeld, Mohammad
Amin Zare Pour, Agnieszka Paszuk, David Ostheimer, Sahar Shekarabi, et al. “Clean
and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic Properties.”
Physica Status Solidi (b) 259, no. 11 (2022). https://doi.org/10.1002/pssb.202200308.'
ieee: 'L. J. Glahn et al., “Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces:
Structures and Electronic Properties,” physica status solidi (b), vol.
259, no. 11, Art. no. 2200308, 2022, doi: 10.1002/pssb.202200308.'
mla: 'Glahn, Luis Joel, et al. “Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces:
Structures and Electronic Properties.” Physica Status Solidi (b), vol.
259, no. 11, 2200308, Wiley, 2022, doi:10.1002/pssb.202200308.'
short: L.J. Glahn, I.A. Ruiz Alvarado, S. Neufeld, M.A. Zare Pour, A. Paszuk, D.
Ostheimer, S. Shekarabi, O. Romanyuk, D.C. Moritz, J.P. Hofmann, W. Jaegermann,
T. Hannappel, W.G. Schmidt, Physica Status Solidi (b) 259 (2022).
date_created: 2023-01-20T09:19:43Z
date_updated: 2023-04-20T13:59:01Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '230'
- _id: '35'
doi: 10.1002/pssb.202200308
intvolume: ' 259'
issue: '11'
keyword:
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
project:
- _id: '52'
name: 'PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing'
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
publisher: Wiley
status: public
title: 'Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic
Properties'
type: journal_article
user_id: '16199'
volume: 259
year: '2022'
...
---
_id: '40244'
article_number: '2100462'
author:
- first_name: Lukas
full_name: Meier, Lukas
last_name: Meier
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
citation:
ama: Meier L, Schmidt WG. GaInP/AlInP(001) Interfaces from Density Functional Theory.
physica status solidi (b). 2021;259(1). doi:10.1002/pssb.202100462
apa: Meier, L., & Schmidt, W. G. (2021). GaInP/AlInP(001) Interfaces from Density
Functional Theory. Physica Status Solidi (b), 259(1), Article 2100462.
https://doi.org/10.1002/pssb.202100462
bibtex: '@article{Meier_Schmidt_2021, title={GaInP/AlInP(001) Interfaces from Density
Functional Theory}, volume={259}, DOI={10.1002/pssb.202100462},
number={12100462}, journal={physica status solidi (b)}, publisher={Wiley}, author={Meier,
Lukas and Schmidt, Wolf Gero}, year={2021} }'
chicago: Meier, Lukas, and Wolf Gero Schmidt. “GaInP/AlInP(001) Interfaces from
Density Functional Theory.” Physica Status Solidi (b) 259, no. 1 (2021).
https://doi.org/10.1002/pssb.202100462.
ieee: 'L. Meier and W. G. Schmidt, “GaInP/AlInP(001) Interfaces from Density Functional
Theory,” physica status solidi (b), vol. 259, no. 1, Art. no. 2100462,
2021, doi: 10.1002/pssb.202100462.'
mla: Meier, Lukas, and Wolf Gero Schmidt. “GaInP/AlInP(001) Interfaces from Density
Functional Theory.” Physica Status Solidi (b), vol. 259, no. 1, 2100462,
Wiley, 2021, doi:10.1002/pssb.202100462.
short: L. Meier, W.G. Schmidt, Physica Status Solidi (b) 259 (2021).
date_created: 2023-01-26T09:41:51Z
date_updated: 2023-04-20T14:28:22Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '230'
- _id: '35'
doi: 10.1002/pssb.202100462
intvolume: ' 259'
issue: '1'
keyword:
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
project:
- _id: '52'
name: 'PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing'
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
publisher: Wiley
status: public
title: GaInP/AlInP(001) Interfaces from Density Functional Theory
type: journal_article
user_id: '16199'
volume: 259
year: '2021'
...
---
_id: '23840'
article_number: '1900522'
author:
- first_name: Elias
full_name: Baron, Elias
last_name: Baron
- first_name: Rüdiger
full_name: Goldhahn, Rüdiger
last_name: Goldhahn
- first_name: Michael
full_name: Deppe, Michael
last_name: Deppe
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Martin
full_name: Feneberg, Martin
last_name: Feneberg
citation:
ama: Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Photoluminescence Line‐Shape
Analysis of Highly n‐Type Doped Zincblende GaN. physica status solidi (b).
2020. doi:10.1002/pssb.201900522
apa: Baron, E., Goldhahn, R., Deppe, M., As, D. J., & Feneberg, M. (2020). Photoluminescence
Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN. Physica Status Solidi
(B). https://doi.org/10.1002/pssb.201900522
bibtex: '@article{Baron_Goldhahn_Deppe_As_Feneberg_2020, title={Photoluminescence
Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN}, DOI={10.1002/pssb.201900522},
number={1900522}, journal={physica status solidi (b)}, author={Baron, Elias and
Goldhahn, Rüdiger and Deppe, Michael and As, Donat Josef and Feneberg, Martin},
year={2020} }'
chicago: Baron, Elias, Rüdiger Goldhahn, Michael Deppe, Donat Josef As, and Martin
Feneberg. “Photoluminescence Line‐Shape Analysis of Highly N‐Type Doped Zincblende
GaN.” Physica Status Solidi (B), 2020. https://doi.org/10.1002/pssb.201900522.
ieee: E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Photoluminescence
Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN,” physica status
solidi (b), 2020.
mla: Baron, Elias, et al. “Photoluminescence Line‐Shape Analysis of Highly N‐Type
Doped Zincblende GaN.” Physica Status Solidi (B), 1900522, 2020, doi:10.1002/pssb.201900522.
short: E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physica Status Solidi
(B) (2020).
date_created: 2021-09-07T09:17:31Z
date_updated: 2022-01-06T06:56:01Z
department:
- _id: '230'
- _id: '429'
doi: 10.1002/pssb.201900522
language:
- iso: eng
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
status: public
title: Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN
type: journal_article
user_id: '14'
year: '2020'
...
---
_id: '23841'
article_number: '1900532'
author:
- first_name: Michael
full_name: Deppe, Michael
last_name: Deppe
- first_name: Tobias
full_name: Henksmeier, Tobias
last_name: Henksmeier
- first_name: Jürgen W.
full_name: Gerlach, Jürgen W.
last_name: Gerlach
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy
Growth and Characterization of Germanium‐Doped Cubic Al
x Ga 1− x
N. physica status solidi (b). 2020. doi:10.1002/pssb.201900532
apa: Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., & As, D. J. (2020).
Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al
x Ga 1−
x N. Physica Status Solidi (B). https://doi.org/10.1002/pssb.201900532
bibtex: '@article{Deppe_Henksmeier_Gerlach_Reuter_As_2020, title={Molecular Beam
Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al
x Ga 1− x
N}, DOI={10.1002/pssb.201900532},
number={1900532}, journal={physica status solidi (b)}, author={Deppe, Michael
and Henksmeier, Tobias and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat Josef},
year={2020} }'
chicago: Deppe, Michael, Tobias Henksmeier, Jürgen W. Gerlach, Dirk Reuter, and
Donat Josef As. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped
Cubic Al x Ga 1−
x N.” Physica Status Solidi (B),
2020. https://doi.org/10.1002/pssb.201900532.
ieee: M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular
Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al
x Ga 1−
x N,” physica status solidi (b), 2020.
mla: Deppe, Michael, et al. “Molecular Beam Epitaxy Growth and Characterization
of Germanium‐Doped Cubic Al x
Ga 1− x N.” Physica
Status Solidi (B), 1900532, 2020, doi:10.1002/pssb.201900532.
short: M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status
Solidi (B) (2020).
date_created: 2021-09-07T09:18:26Z
date_updated: 2022-01-06T06:56:01Z
department:
- _id: '230'
- _id: '429'
doi: 10.1002/pssb.201900532
language:
- iso: eng
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
status: public
title: Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic
Al x Ga 1− x N
type: journal_article
user_id: '14'
year: '2020'
...
---
_id: '40233'
article_number: '2000463'
author:
- first_name: Lukas
full_name: Meier, Lukas
last_name: Meier
- first_name: Christian
full_name: Braun, Christian
last_name: Braun
- first_name: Thomas
full_name: Hannappel, Thomas
last_name: Hannappel
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
citation:
ama: Meier L, Braun C, Hannappel T, Schmidt WG. Band Alignment at Ga
x In
1– x P/Al
y In
1– y P Alloy Interfaces
from Hybrid Density Functional Theory Calculations. physica status solidi (b).
2020;258(2). doi:10.1002/pssb.202000463
apa: Meier, L., Braun, C., Hannappel, T., & Schmidt, W. G. (2020). Band Alignment
at Ga x In
1– x
P/Al y In
1– y
P Alloy Interfaces from Hybrid Density Functional Theory Calculations. Physica
Status Solidi (b), 258(2), Article 2000463. https://doi.org/10.1002/pssb.202000463
bibtex: '@article{Meier_Braun_Hannappel_Schmidt_2020, title={Band Alignment at Ga
x In
1– x P/Al
y In
1– y P Alloy
Interfaces from Hybrid Density Functional Theory Calculations}, volume={258},
DOI={10.1002/pssb.202000463},
number={22000463}, journal={physica status solidi (b)}, publisher={Wiley}, author={Meier,
Lukas and Braun, Christian and Hannappel, Thomas and Schmidt, Wolf Gero}, year={2020}
}'
chicago: Meier, Lukas, Christian Braun, Thomas Hannappel, and Wolf Gero Schmidt.
“Band Alignment at Ga x
In 1– x
P/Al y
In 1– y
P Alloy Interfaces from Hybrid Density Functional Theory Calculations.”
Physica Status Solidi (b) 258, no. 2 (2020). https://doi.org/10.1002/pssb.202000463.
ieee: 'L. Meier, C. Braun, T. Hannappel, and W. G. Schmidt, “Band Alignment at Ga
x In
1– x P/Al
y In
1– y P Alloy
Interfaces from Hybrid Density Functional Theory Calculations,” physica status
solidi (b), vol. 258, no. 2, Art. no. 2000463, 2020, doi: 10.1002/pssb.202000463.'
mla: Meier, Lukas, et al. “Band Alignment at Ga x
In 1– x
P/Al y
In 1– y
P Alloy Interfaces from Hybrid Density Functional
Theory Calculations.” Physica Status Solidi (b), vol. 258, no. 2, 2000463,
Wiley, 2020, doi:10.1002/pssb.202000463.
short: L. Meier, C. Braun, T. Hannappel, W.G. Schmidt, Physica Status Solidi (b)
258 (2020).
date_created: 2023-01-26T09:33:46Z
date_updated: 2023-04-20T14:18:36Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '230'
- _id: '35'
doi: 10.1002/pssb.202000463
intvolume: ' 258'
issue: '2'
keyword:
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
project:
- _id: '52'
name: 'PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing'
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
publisher: Wiley
status: public
title: Band Alignment at Ga x In 1– x P/Al y In 1– y P
Alloy Interfaces from Hybrid Density Functional Theory Calculations
type: journal_article
user_id: '16199'
volume: 258
year: '2020'
...
---
_id: '15444'
article_number: '1900532'
author:
- first_name: Michael
full_name: Deppe, Michael
last_name: Deppe
- first_name: Tobias
full_name: Henksmeier, Tobias
last_name: Henksmeier
- first_name: Jürgen W.
full_name: Gerlach, Jürgen W.
last_name: Gerlach
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat J.
full_name: As, Donat J.
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy
Growth and Characterization of Germanium‐Doped Cubic Al
x Ga 1− x
N. physica status solidi (b). Published online 2019. doi:10.1002/pssb.201900532
apa: Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., & As, D. J. (2019).
Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al
x Ga 1−
x N. Physica Status Solidi (b), Article
1900532. https://doi.org/10.1002/pssb.201900532
bibtex: '@article{Deppe_Henksmeier_Gerlach_Reuter_As_2019, title={Molecular Beam
Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al
x Ga 1− x
N}, DOI={10.1002/pssb.201900532},
number={1900532}, journal={physica status solidi (b)}, author={Deppe, Michael
and Henksmeier, Tobias and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat J.},
year={2019} }'
chicago: Deppe, Michael, Tobias Henksmeier, Jürgen W. Gerlach, Dirk Reuter, and
Donat J. As. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped
Cubic Al x Ga 1−
x N.” Physica Status Solidi (b),
2019. https://doi.org/10.1002/pssb.201900532.
ieee: 'M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular
Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al
x Ga 1−
x N,” physica status solidi (b), Art. no. 1900532,
2019, doi: 10.1002/pssb.201900532.'
mla: Deppe, Michael, et al. “Molecular Beam Epitaxy Growth and Characterization
of Germanium‐Doped Cubic Al x
Ga 1− x N.” Physica
Status Solidi (b), 1900532, 2019, doi:10.1002/pssb.201900532.
short: M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status
Solidi (b) (2019).
date_created: 2020-01-07T10:09:27Z
date_updated: 2023-10-09T09:03:47Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssb.201900532
language:
- iso: eng
main_file_link:
- open_access: '1'
oa: '1'
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
status: public
title: Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic
Al x Ga 1− x N
type: journal_article
user_id: '14931'
year: '2019'
...
---
_id: '7022'
article_number: '1700457'
author:
- first_name: Sarah
full_name: Blumenthal, Sarah
last_name: Blumenthal
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Blumenthal S, Reuter D, As DJ. Optical Properties of Cubic GaN Quantum Dots
Grown by Molecular Beam Epitaxy. physica status solidi (b). 2018;255(5).
doi:10.1002/pssb.201700457
apa: Blumenthal, S., Reuter, D., & As, D. J. (2018). Optical Properties of Cubic
GaN Quantum Dots Grown by Molecular Beam Epitaxy. Physica Status Solidi (B),
255(5). https://doi.org/10.1002/pssb.201700457
bibtex: '@article{Blumenthal_Reuter_As_2018, title={Optical Properties of Cubic
GaN Quantum Dots Grown by Molecular Beam Epitaxy}, volume={255}, DOI={10.1002/pssb.201700457},
number={51700457}, journal={physica status solidi (b)}, publisher={Wiley}, author={Blumenthal,
Sarah and Reuter, Dirk and As, Donat Josef}, year={2018} }'
chicago: Blumenthal, Sarah, Dirk Reuter, and Donat Josef As. “Optical Properties
of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.” Physica Status
Solidi (B) 255, no. 5 (2018). https://doi.org/10.1002/pssb.201700457.
ieee: S. Blumenthal, D. Reuter, and D. J. As, “Optical Properties of Cubic GaN Quantum
Dots Grown by Molecular Beam Epitaxy,” physica status solidi (b), vol.
255, no. 5, 2018.
mla: Blumenthal, Sarah, et al. “Optical Properties of Cubic GaN Quantum Dots Grown
by Molecular Beam Epitaxy.” Physica Status Solidi (B), vol. 255, no. 5,
1700457, Wiley, 2018, doi:10.1002/pssb.201700457.
short: S. Blumenthal, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2018).
date_created: 2019-01-28T09:40:01Z
date_updated: 2022-01-06T07:03:26Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssb.201700457
intvolume: ' 255'
issue: '5'
language:
- iso: eng
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
publication_status: published
publisher: Wiley
status: public
title: Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy
type: journal_article
user_id: '42514'
volume: 255
year: '2018'
...
---
_id: '20588'
abstract:
- lang: eng
text: We have investigated the stacking of self-assembled cubic GaN quantum dots
(QDs) grown in Stranski–Krastanov (SK) growth mode. The number of stacked layers
is varied to compare their optical properties. The growth is in situ controlled
by reflection high energy electron diffraction to prove the SK QD growth. Atomic
force and transmission electron microscopy show the existence of wetting layer
and QDs with a diameter of about 10 nm and a height of about 2 nm. The QDs have
a truncated pyramidal form and are vertically aligned in growth direction. Photoluminescence
measurements show an increase of the intensity with increasing number of stacked
QD layers. Furthermore, a systematic blue-shift of 120 meV is observed with increasing
number of stacked QD layers. This blueshift derives from a decrease in the QD
height, because the QD height has also been the main confining dimension in our
QDs.
article_type: original
author:
- first_name: Sarah
full_name: Blumenthal, Sarah
last_name: Blumenthal
- first_name: Torsten
full_name: Rieger, Torsten
last_name: Rieger
- first_name: Doris
full_name: Meertens, Doris
last_name: Meertens
- first_name: Alexander
full_name: Pawlis, Alexander
last_name: Pawlis
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Blumenthal S, Rieger T, Meertens D, Pawlis A, Reuter D, As DJ. Stacked Self-Assembled
Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. physica status solidi
(b). 2018;255(3):1600729. doi:https://doi.org/10.1002/pssb.201600729
apa: Blumenthal, S., Rieger, T., Meertens, D., Pawlis, A., Reuter, D., & As,
D. J. (2018). Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular
Beam Epitaxy. Physica Status Solidi (b), 255(3), 1600729. https://doi.org/10.1002/pssb.201600729
bibtex: '@article{Blumenthal_Rieger_Meertens_Pawlis_Reuter_As_2018, title={Stacked
Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy}, volume={255},
DOI={https://doi.org/10.1002/pssb.201600729},
number={3}, journal={physica status solidi (b)}, author={Blumenthal, Sarah and
Rieger, Torsten and Meertens, Doris and Pawlis, Alexander and Reuter, Dirk and
As, Donat Josef}, year={2018}, pages={1600729} }'
chicago: 'Blumenthal, Sarah, Torsten Rieger, Doris Meertens, Alexander Pawlis, Dirk
Reuter, and Donat Josef As. “Stacked Self-Assembled Cubic GaN Quantum Dots Grown
by Molecular Beam Epitaxy.” Physica Status Solidi (b) 255, no. 3 (2018):
1600729. https://doi.org/10.1002/pssb.201600729.'
ieee: 'S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, and D. J. As,
“Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy,”
physica status solidi (b), vol. 255, no. 3, p. 1600729, 2018, doi: https://doi.org/10.1002/pssb.201600729.'
mla: Blumenthal, Sarah, et al. “Stacked Self-Assembled Cubic GaN Quantum Dots Grown
by Molecular Beam Epitaxy.” Physica Status Solidi (b), vol. 255, no. 3,
2018, p. 1600729, doi:https://doi.org/10.1002/pssb.201600729.
short: S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, D.J. As, Physica
Status Solidi (b) 255 (2018) 1600729.
date_created: 2020-12-02T09:38:00Z
date_updated: 2023-10-09T09:19:40Z
department:
- _id: '230'
- _id: '429'
doi: https://doi.org/10.1002/pssb.201600729
intvolume: ' 255'
issue: '3'
keyword:
- cubic crystals
- GaN
- molecular beam epitaxy
- quantum dots
language:
- iso: eng
page: '1600729'
project:
- _id: '53'
grant_number: '231447078'
name: TRR 142
- _id: '54'
name: TRR 142 - Project Area A
- _id: '63'
grant_number: '231447078'
name: TRR 142 - Subproject A6
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
publication_status: published
status: public
title: Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy
type: journal_article
user_id: '14931'
volume: 255
year: '2018'
...
---
_id: '17065'
article_number: '1800314'
author:
- first_name: Norbert
full_name: Esser, Norbert
last_name: Esser
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
citation:
ama: 'Esser N, Schmidt WG. Electric Field Induced Raman Scattering at the Sb–InP(110)
Interface: The Surface Dipole Contribution. physica status solidi (b).
2018;(256). doi:10.1002/pssb.201800314'
apa: 'Esser, N., & Schmidt, W. G. (2018). Electric Field Induced Raman Scattering
at the Sb–InP(110) Interface: The Surface Dipole Contribution. Physica Status
Solidi (b), 256, Article 1800314. https://doi.org/10.1002/pssb.201800314'
bibtex: '@article{Esser_Schmidt_2018, title={Electric Field Induced Raman Scattering
at the Sb–InP(110) Interface: The Surface Dipole Contribution}, DOI={10.1002/pssb.201800314},
number={2561800314}, journal={physica status solidi (b)}, author={Esser, Norbert
and Schmidt, Wolf Gero}, year={2018} }'
chicago: 'Esser, Norbert, and Wolf Gero Schmidt. “Electric Field Induced Raman Scattering
at the Sb–InP(110) Interface: The Surface Dipole Contribution.” Physica Status
Solidi (b), no. 256 (2018). https://doi.org/10.1002/pssb.201800314.'
ieee: 'N. Esser and W. G. Schmidt, “Electric Field Induced Raman Scattering at the
Sb–InP(110) Interface: The Surface Dipole Contribution,” physica status solidi
(b), no. 256, Art. no. 1800314, 2018, doi: 10.1002/pssb.201800314.'
mla: 'Esser, Norbert, and Wolf Gero Schmidt. “Electric Field Induced Raman Scattering
at the Sb–InP(110) Interface: The Surface Dipole Contribution.” Physica Status
Solidi (b), no. 256, 1800314, 2018, doi:10.1002/pssb.201800314.'
short: N. Esser, W.G. Schmidt, Physica Status Solidi (b) (2018).
date_created: 2020-05-29T09:48:41Z
date_updated: 2025-12-16T11:30:05Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '35'
- _id: '27'
- _id: '230'
- _id: '429'
doi: 10.1002/pssb.201800314
issue: '256'
language:
- iso: eng
project:
- _id: '52'
name: Computing Resources Provided by the Paderborn Center for Parallel Computing
- _id: '52'
name: 'PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing'
- _id: '53'
name: 'TRR 142: TRR 142'
- _id: '55'
name: 'TRR 142 - B: TRR 142 - Project Area B'
- _id: '69'
name: 'TRR 142 - B4: TRR 142 - Subproject B4'
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
- 1521-3951
publication_status: published
status: public
title: 'Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The
Surface Dipole Contribution'
type: journal_article
user_id: '16199'
year: '2018'
...
---
_id: '4808'
article_number: '1700373'
author:
- first_name: Tobias
full_name: Wecker, Tobias
last_name: Wecker
- first_name: Gordon
full_name: Callsen, Gordon
last_name: Callsen
- first_name: Axel
full_name: Hoffmann, Axel
last_name: Hoffmann
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Wecker T, Callsen G, Hoffmann A, Reuter D, As DJ. Correlation of the Carrier
Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double
Quantum Wells. physica status solidi (b). 2017;255(5). doi:10.1002/pssb.201700373
apa: Wecker, T., Callsen, G., Hoffmann, A., Reuter, D., & As, D. J. (2017).
Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic
GaN/Al0.64Ga0.36N Double Quantum Wells. Physica Status Solidi (B), 255(5).
https://doi.org/10.1002/pssb.201700373
bibtex: '@article{Wecker_Callsen_Hoffmann_Reuter_As_2017, title={Correlation of
the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N
Double Quantum Wells}, volume={255}, DOI={10.1002/pssb.201700373},
number={51700373}, journal={physica status solidi (b)}, publisher={Wiley}, author={Wecker,
Tobias and Callsen, Gordon and Hoffmann, Axel and Reuter, Dirk and As, Donat Josef},
year={2017} }'
chicago: Wecker, Tobias, Gordon Callsen, Axel Hoffmann, Dirk Reuter, and Donat Josef
As. “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric
Cubic GaN/Al0.64Ga0.36N Double Quantum Wells.” Physica Status Solidi (B)
255, no. 5 (2017). https://doi.org/10.1002/pssb.201700373.
ieee: T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, and D. J. As, “Correlation
of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N
Double Quantum Wells,” physica status solidi (b), vol. 255, no. 5, 2017.
mla: Wecker, Tobias, et al. “Correlation of the Carrier Decay Time and Barrier Thickness
for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells.” Physica Status
Solidi (B), vol. 255, no. 5, 1700373, Wiley, 2017, doi:10.1002/pssb.201700373.
short: T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Physica Status Solidi
(B) 255 (2017).
date_created: 2018-10-24T07:59:23Z
date_updated: 2022-01-06T07:01:24Z
doi: 10.1002/pssb.201700373
intvolume: ' 255'
issue: '5'
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
publication_status: published
publisher: Wiley
status: public
title: Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric
Cubic GaN/Al0.64Ga0.36N Double Quantum Wells
type: journal_article
user_id: '14'
volume: 255
year: '2017'
...
---
_id: '4811'
article_number: '1600700'
author:
- first_name: Michael
full_name: Deppe, Michael
last_name: Deppe
- first_name: Jürgen W.
full_name: Gerlach, Jürgen W.
last_name: Gerlach
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Deppe M, Gerlach JW, Reuter D, As DJ. Incorporation of germanium for n-type
doping of cubic GaN. physica status solidi (b). 2017;254(8). doi:10.1002/pssb.201600700
apa: Deppe, M., Gerlach, J. W., Reuter, D., & As, D. J. (2017). Incorporation
of germanium for n-type doping of cubic GaN. Physica Status Solidi (B),
254(8). https://doi.org/10.1002/pssb.201600700
bibtex: '@article{Deppe_Gerlach_Reuter_As_2017, title={Incorporation of germanium
for n-type doping of cubic GaN}, volume={254}, DOI={10.1002/pssb.201600700},
number={81600700}, journal={physica status solidi (b)}, publisher={Wiley}, author={Deppe,
Michael and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat Josef}, year={2017}
}'
chicago: Deppe, Michael, Jürgen W. Gerlach, Dirk Reuter, and Donat Josef As. “Incorporation
of Germanium for N-Type Doping of Cubic GaN.” Physica Status Solidi (B)
254, no. 8 (2017). https://doi.org/10.1002/pssb.201600700.
ieee: M. Deppe, J. W. Gerlach, D. Reuter, and D. J. As, “Incorporation of germanium
for n-type doping of cubic GaN,” physica status solidi (b), vol. 254, no.
8, 2017.
mla: Deppe, Michael, et al. “Incorporation of Germanium for N-Type Doping of Cubic
GaN.” Physica Status Solidi (B), vol. 254, no. 8, 1600700, Wiley, 2017,
doi:10.1002/pssb.201600700.
short: M. Deppe, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) 254
(2017).
date_created: 2018-10-24T08:02:51Z
date_updated: 2022-01-06T07:01:25Z
doi: 10.1002/pssb.201600700
intvolume: ' 254'
issue: '8'
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
publication_status: published
publisher: Wiley
status: public
title: Incorporation of germanium for n-type doping of cubic GaN
type: journal_article
user_id: '14'
volume: 254
year: '2017'
...
---
_id: '4240'
abstract:
- lang: eng
text: Cubic gallium nitride (GaN) films are analyzed with highresolution X-ray diffraction
(HRXRD) and Raman spectroscopy. Several cubic GaN layers were grown on 3C-SiC
(001) substrate by radio-frequency plasma-assisted molecular beam epitaxy. The
layer thickness of the cubic GaN was varied between 75 and 505 nm. The HRXRD analysis
reveals a reduction of the full-width at half-maximum (FWHM) of omega scans for
growing layer thicknesses, which is caused by a partial compensation of defects.
The Raman characterization confirms well-formed c-GaN layers. A more detailed
examination of the longitudinal optical mode hints at a correlation of the FWHM
of the Raman mode with the dislocation density, which shows the possibility to
determine dislocation densities by Ramanspectroscopy on a micrometer scale, which
is not possible by HRXRD. Furthermore, this Raman analysis shows that normalized
Raman spectra present an alternative way to determine layer thicknesses of thin
GaN films.
article_type: original
author:
- first_name: Michael
full_name: Rüsing, Michael
id: '22501'
last_name: Rüsing
orcid: 0000-0003-4682-4577
- first_name: T.
full_name: Wecker, T.
last_name: Wecker
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: Rüsing M, Wecker T, Berth G, As DJ, Zrenner A. Joint Raman spectroscopy and
HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC. physica
status solidi (b). 2016;253(4):778-782. doi:10.1002/pssb.201552592
apa: Rüsing, M., Wecker, T., Berth, G., As, D. J., & Zrenner, A. (2016). Joint
Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown
on 3C-SiC. Physica Status Solidi (b), 253(4), 778–782. https://doi.org/10.1002/pssb.201552592
bibtex: '@article{Rüsing_Wecker_Berth_As_Zrenner_2016, title={Joint Raman spectroscopy
and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC}, volume={253},
DOI={10.1002/pssb.201552592},
number={4}, journal={physica status solidi (b)}, publisher={Wiley}, author={Rüsing,
Michael and Wecker, T. and Berth, Gerhard and As, Donat Josef and Zrenner, Artur},
year={2016}, pages={778–782} }'
chicago: 'Rüsing, Michael, T. Wecker, Gerhard Berth, Donat Josef As, and Artur Zrenner.
“Joint Raman Spectroscopy and HRXRD Investigation of Cubic Gallium Nitride Layers
Grown on 3C-SiC.” Physica Status Solidi (b) 253, no. 4 (2016): 778–82.
https://doi.org/10.1002/pssb.201552592.'
ieee: 'M. Rüsing, T. Wecker, G. Berth, D. J. As, and A. Zrenner, “Joint Raman spectroscopy
and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC,” physica
status solidi (b), vol. 253, no. 4, pp. 778–782, 2016, doi: 10.1002/pssb.201552592.'
mla: Rüsing, Michael, et al. “Joint Raman Spectroscopy and HRXRD Investigation of
Cubic Gallium Nitride Layers Grown on 3C-SiC.” Physica Status Solidi (b),
vol. 253, no. 4, Wiley, 2016, pp. 778–82, doi:10.1002/pssb.201552592.
short: M. Rüsing, T. Wecker, G. Berth, D.J. As, A. Zrenner, Physica Status Solidi
(b) 253 (2016) 778–782.
date_created: 2018-08-29T08:24:01Z
date_updated: 2023-10-09T08:48:35Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1002/pssb.201552592
intvolume: ' 253'
issue: '4'
keyword:
- cubic gallium nitride
- dislocation density
- HRXRD
- Raman spectroscopy
language:
- iso: eng
page: 778-782
project:
- _id: '53'
grant_number: '231447078'
name: TRR 142
- _id: '55'
name: TRR 142 - Project Area B
- _id: '68'
grant_number: '231447078'
name: TRR 142 - Subproject B3
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
publication_status: published
publisher: Wiley
status: public
title: Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers
grown on 3C-SiC
type: journal_article
user_id: '14931'
volume: 253
year: '2016'
...
---
_id: '10025'
abstract:
- lang: eng
text: The phonon dispersions of the ferro‐ and paraelectric phase of LiTaO3 are
calculated within density‐functional perturbation theory. The longitudinal optical
phonon modes are theoretically derived and compared with available experimental
data. Our results confirm the recent phonon assignment proposed by Margueron et
al. [J. Appl. Phys. 111, 104105 (2012)] on the basis of spectroscopical studies.
A comparison with the phonon band structure of the related material LiNbO3 shows
minor differences that can be traced to the atomic‐mass difference between Ta
and Nb. The presence of phonons with imaginary frequencies for the paraelectric
phase suggests that it does not correspond to a minimum energy structure, and
is compatible with an order‐disorder type phase transition.
article_type: original
author:
- first_name: Michael
full_name: Friedrich, Michael
last_name: Friedrich
- first_name: Arno
full_name: Schindlmayr, Arno
id: '458'
last_name: Schindlmayr
orcid: 0000-0002-4855-071X
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
- first_name: Simone
full_name: Sanna, Simone
last_name: Sanna
citation:
ama: Friedrich M, Schindlmayr A, Schmidt WG, Sanna S. LiTaO3 phonon dispersion and
ferroelectric transition calculated from first principles. Physica Status Solidi
B. 2016;253(4):683-689. doi:10.1002/pssb.201552576
apa: Friedrich, M., Schindlmayr, A., Schmidt, W. G., & Sanna, S. (2016). LiTaO3
phonon dispersion and ferroelectric transition calculated from first principles.
Physica Status Solidi B, 253(4), 683–689. https://doi.org/10.1002/pssb.201552576
bibtex: '@article{Friedrich_Schindlmayr_Schmidt_Sanna_2016, title={LiTaO3 phonon
dispersion and ferroelectric transition calculated from first principles}, volume={253},
DOI={10.1002/pssb.201552576},
number={4}, journal={Physica Status Solidi B}, publisher={Wiley-VCH}, author={Friedrich,
Michael and Schindlmayr, Arno and Schmidt, Wolf Gero and Sanna, Simone}, year={2016},
pages={683–689} }'
chicago: 'Friedrich, Michael, Arno Schindlmayr, Wolf Gero Schmidt, and Simone Sanna.
“LiTaO3 Phonon Dispersion and Ferroelectric Transition Calculated from First Principles.”
Physica Status Solidi B 253, no. 4 (2016): 683–89. https://doi.org/10.1002/pssb.201552576.'
ieee: 'M. Friedrich, A. Schindlmayr, W. G. Schmidt, and S. Sanna, “LiTaO3 phonon
dispersion and ferroelectric transition calculated from first principles,” Physica
Status Solidi B, vol. 253, no. 4, pp. 683–689, 2016, doi: 10.1002/pssb.201552576.'
mla: Friedrich, Michael, et al. “LiTaO3 Phonon Dispersion and Ferroelectric Transition
Calculated from First Principles.” Physica Status Solidi B, vol. 253, no.
4, Wiley-VCH, 2016, pp. 683–89, doi:10.1002/pssb.201552576.
short: M. Friedrich, A. Schindlmayr, W.G. Schmidt, S. Sanna, Physica Status Solidi
B 253 (2016) 683–689.
date_created: 2019-05-29T07:52:52Z
date_updated: 2025-12-05T09:58:55Z
ddc:
- '530'
department:
- _id: '295'
- _id: '296'
- _id: '230'
- _id: '429'
- _id: '15'
- _id: '35'
- _id: '27'
doi: 10.1002/pssb.201552576
external_id:
isi:
- '000374142500015'
file:
- access_level: closed
content_type: application/pdf
creator: schindlm
date_created: 2020-08-28T14:22:11Z
date_updated: 2020-08-30T14:41:39Z
description: © 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
file_id: '18577'
file_name: pssb.201552576.pdf
file_size: 402594
relation: main_file
title: LiTaO3 phonon dispersion and ferroelectric transition calculated from first
principles
file_date_updated: 2020-08-30T14:41:39Z
has_accepted_license: '1'
intvolume: ' 253'
isi: '1'
issue: '4'
language:
- iso: eng
page: 683-689
project:
- _id: '52'
name: Computing Resources Provided by the Paderborn Center for Parallel Computing
- _id: '53'
name: TRR 142
- _id: '55'
name: TRR 142 - Project Area B
- _id: '69'
name: TRR 142 - Subproject B4
- _id: '52'
name: Computing Resources Provided by the Paderborn Center for Parallel Computing
publication: Physica Status Solidi B
publication_identifier:
eissn:
- 1521-3951
issn:
- 0370-1972
publication_status: published
publisher: Wiley-VCH
quality_controlled: '1'
status: public
title: LiTaO3 phonon dispersion and ferroelectric transition calculated from first
principles
type: journal_article
user_id: '16199'
volume: 253
year: '2016'
...
---
_id: '22809'
author:
- first_name: Ashish K.
full_name: Rai, Ashish K.
last_name: Rai
- first_name: Simon
full_name: Gordon, Simon
last_name: Gordon
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Dirk
full_name: Reuter, Dirk
last_name: Reuter
citation:
ama: Rai AK, Gordon S, Ludwig A, Wieck AD, Zrenner A, Reuter D. Spatially indirect
transitions in electric field tunable quantum dot diodes. physica status solidi
(b). 2015:437-441. doi:10.1002/pssb.201552591
apa: Rai, A. K., Gordon, S., Ludwig, A., Wieck, A. D., Zrenner, A., & Reuter,
D. (2015). Spatially indirect transitions in electric field tunable quantum dot
diodes. Physica Status Solidi (B), 437–441. https://doi.org/10.1002/pssb.201552591
bibtex: '@article{Rai_Gordon_Ludwig_Wieck_Zrenner_Reuter_2015, title={Spatially
indirect transitions in electric field tunable quantum dot diodes}, DOI={10.1002/pssb.201552591},
journal={physica status solidi (b)}, author={Rai, Ashish K. and Gordon, Simon
and Ludwig, Arne and Wieck, Andreas D. and Zrenner, Artur and Reuter, Dirk}, year={2015},
pages={437–441} }'
chicago: Rai, Ashish K., Simon Gordon, Arne Ludwig, Andreas D. Wieck, Artur Zrenner,
and Dirk Reuter. “Spatially Indirect Transitions in Electric Field Tunable Quantum
Dot Diodes.” Physica Status Solidi (B), 2015, 437–41. https://doi.org/10.1002/pssb.201552591.
ieee: A. K. Rai, S. Gordon, A. Ludwig, A. D. Wieck, A. Zrenner, and D. Reuter, “Spatially
indirect transitions in electric field tunable quantum dot diodes,” physica
status solidi (b), pp. 437–441, 2015.
mla: Rai, Ashish K., et al. “Spatially Indirect Transitions in Electric Field Tunable
Quantum Dot Diodes.” Physica Status Solidi (B), 2015, pp. 437–41, doi:10.1002/pssb.201552591.
short: A.K. Rai, S. Gordon, A. Ludwig, A.D. Wieck, A. Zrenner, D. Reuter, Physica
Status Solidi (B) (2015) 437–441.
date_created: 2021-07-26T05:54:56Z
date_updated: 2022-01-06T06:55:42Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssb.201552591
language:
- iso: eng
page: 437-441
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
publication_status: published
status: public
title: Spatially indirect transitions in electric field tunable quantum dot diodes
type: journal_article
user_id: '606'
year: '2015'
...
---
_id: '4276'
abstract:
- lang: eng
text: "We analyse an InAs/GaAs-based electric field tunable single quantum dot diode
with a thin tunnelling barrier between a\r\nburied n þ -back contact and a quantum
dot layer. In voltage- dependent photoluminescence measurements, we observe rich
signatures from spatially direct and indirect transitions from the wetting layer
and from a single quantum dot. By analysing the Stark effect, we show that the
indirect transitions result from a recombination between confined holes in the
wetting or quantum dot layer with electrons from the edge of the Fermi sea in
the back contact. Using a 17 nm tunnel barrier which provides comparably weak
tunnel coupling allowed us to observe clear signatures of direct and corresponding
indirect lines for a series of neutral and positively charged quantum dot states."
article_type: original
author:
- first_name: Ashish K.
full_name: Rai, Ashish K.
last_name: Rai
- first_name: Simon
full_name: Gordon, Simon
last_name: Gordon
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
citation:
ama: Rai AK, Gordon S, Ludwig A, Wieck AD, Zrenner A, Reuter D. Spatially indirect
transitions in electric field tunable quantum dot diodes. physica status solidi
(b). 2015;253(3):437-441. doi:10.1002/pssb.201552591
apa: Rai, A. K., Gordon, S., Ludwig, A., Wieck, A. D., Zrenner, A., & Reuter,
D. (2015). Spatially indirect transitions in electric field tunable quantum dot
diodes. Physica Status Solidi (B), 253(3), 437–441. https://doi.org/10.1002/pssb.201552591
bibtex: '@article{Rai_Gordon_Ludwig_Wieck_Zrenner_Reuter_2015, title={Spatially
indirect transitions in electric field tunable quantum dot diodes}, volume={253},
DOI={10.1002/pssb.201552591},
number={3}, journal={physica status solidi (b)}, publisher={Wiley}, author={Rai,
Ashish K. and Gordon, Simon and Ludwig, Arne and Wieck, Andreas D. and Zrenner,
Artur and Reuter, Dirk}, year={2015}, pages={437–441} }'
chicago: 'Rai, Ashish K., Simon Gordon, Arne Ludwig, Andreas D. Wieck, Artur Zrenner,
and Dirk Reuter. “Spatially Indirect Transitions in Electric Field Tunable Quantum
Dot Diodes.” Physica Status Solidi (B) 253, no. 3 (2015): 437–41. https://doi.org/10.1002/pssb.201552591.'
ieee: A. K. Rai, S. Gordon, A. Ludwig, A. D. Wieck, A. Zrenner, and D. Reuter, “Spatially
indirect transitions in electric field tunable quantum dot diodes,” physica
status solidi (b), vol. 253, no. 3, pp. 437–441, 2015.
mla: Rai, Ashish K., et al. “Spatially Indirect Transitions in Electric Field Tunable
Quantum Dot Diodes.” Physica Status Solidi (B), vol. 253, no. 3, Wiley,
2015, pp. 437–41, doi:10.1002/pssb.201552591.
short: A.K. Rai, S. Gordon, A. Ludwig, A.D. Wieck, A. Zrenner, D. Reuter, Physica
Status Solidi (B) 253 (2015) 437–441.
date_created: 2018-08-29T10:03:56Z
date_updated: 2022-01-06T07:00:46Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1002/pssb.201552591
intvolume: ' 253'
issue: '3'
keyword:
- excitons
- GaAs
- InAs
- quantum dots
- spatially indirect transitions
- Stark shift
language:
- iso: eng
page: 437-441
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
publication_status: published
publisher: Wiley
status: public
title: Spatially indirect transitions in electric field tunable quantum dot diodes
type: journal_article
user_id: '42514'
volume: 253
year: '2015'
...
---
_id: '4824'
author:
- first_name: T.
full_name: Wecker, T.
last_name: Wecker
- first_name: F.
full_name: Hörich, F.
last_name: Hörich
- first_name: M.
full_name: Feneberg, M.
last_name: Feneberg
- first_name: R.
full_name: Goldhahn, R.
last_name: Goldhahn
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Wecker T, Hörich F, Feneberg M, Goldhahn R, Reuter D, As DJ. Structural and
optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum
wells. physica status solidi (b). 2014;252(5):873-878. doi:10.1002/pssb.201451531
apa: Wecker, T., Hörich, F., Feneberg, M., Goldhahn, R., Reuter, D., & As, D.
J. (2014). Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN
double quantum wells. Physica Status Solidi (B), 252(5), 873–878.
https://doi.org/10.1002/pssb.201451531
bibtex: '@article{Wecker_Hörich_Feneberg_Goldhahn_Reuter_As_2014, title={Structural
and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum
wells}, volume={252}, DOI={10.1002/pssb.201451531},
number={5}, journal={physica status solidi (b)}, publisher={Wiley}, author={Wecker,
T. and Hörich, F. and Feneberg, M. and Goldhahn, R. and Reuter, Dirk and As, Donat
Josef}, year={2014}, pages={873–878} }'
chicago: 'Wecker, T., F. Hörich, M. Feneberg, R. Goldhahn, Dirk Reuter, and Donat
Josef As. “Structural and Optical Properties of MBE-Grown Asymmetric Cubic GaN/AlxGa1-XN
Double Quantum Wells.” Physica Status Solidi (B) 252, no. 5 (2014): 873–78.
https://doi.org/10.1002/pssb.201451531.'
ieee: T. Wecker, F. Hörich, M. Feneberg, R. Goldhahn, D. Reuter, and D. J. As, “Structural
and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum
wells,” physica status solidi (b), vol. 252, no. 5, pp. 873–878, 2014.
mla: Wecker, T., et al. “Structural and Optical Properties of MBE-Grown Asymmetric
Cubic GaN/AlxGa1-XN Double Quantum Wells.” Physica Status Solidi (B), vol.
252, no. 5, Wiley, 2014, pp. 873–78, doi:10.1002/pssb.201451531.
short: T. Wecker, F. Hörich, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, Physica
Status Solidi (B) 252 (2014) 873–878.
date_created: 2018-10-24T08:59:33Z
date_updated: 2022-01-06T07:01:25Z
doi: 10.1002/pssb.201451531
intvolume: ' 252'
issue: '5'
language:
- iso: eng
page: 873-878
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
publication_status: published
publisher: Wiley
status: public
title: Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN
double quantum wells
type: journal_article
user_id: '42514'
volume: 252
year: '2014'
...
---
_id: '7229'
author:
- first_name: Stepan
full_name: Shvarkov, Stepan
last_name: Shvarkov
- first_name: Astrid
full_name: Ludwig, Astrid
last_name: Ludwig
- first_name: Andreas Dirk
full_name: Wieck, Andreas Dirk
last_name: Wieck
- first_name: Yvon
full_name: Cordier, Yvon
last_name: Cordier
- first_name: Andreas
full_name: Ney, Andreas
last_name: Ney
- first_name: Hilde
full_name: Hardtdegen, Hilde
last_name: Hardtdegen
- first_name: Anna
full_name: Haab, Anna
last_name: Haab
- first_name: Achim
full_name: Trampert, Achim
last_name: Trampert
- first_name: Rocío
full_name: Ranchal, Rocío
last_name: Ranchal
- first_name: Jens
full_name: Herfort, Jens
last_name: Herfort
- first_name: Hans-Werner
full_name: Becker, Hans-Werner
last_name: Becker
- first_name: Detlef
full_name: Rogalla, Detlef
last_name: Rogalla
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
citation:
ama: Shvarkov S, Ludwig A, Wieck AD, et al. Magnetic properties of Gd-doped GaN.
physica status solidi (b). 2014;251(9):1673-1684. doi:10.1002/pssb.201350205
apa: Shvarkov, S., Ludwig, A., Wieck, A. D., Cordier, Y., Ney, A., Hardtdegen, H.,
… Reuter, D. (2014). Magnetic properties of Gd-doped GaN. Physica Status Solidi
(B), 251(9), 1673–1684. https://doi.org/10.1002/pssb.201350205
bibtex: '@article{Shvarkov_Ludwig_Wieck_Cordier_Ney_Hardtdegen_Haab_Trampert_Ranchal_Herfort_et
al._2014, title={Magnetic properties of Gd-doped GaN}, volume={251}, DOI={10.1002/pssb.201350205},
number={9}, journal={physica status solidi (b)}, publisher={Wiley}, author={Shvarkov,
Stepan and Ludwig, Astrid and Wieck, Andreas Dirk and Cordier, Yvon and Ney, Andreas
and Hardtdegen, Hilde and Haab, Anna and Trampert, Achim and Ranchal, Rocío and
Herfort, Jens and et al.}, year={2014}, pages={1673–1684} }'
chicago: 'Shvarkov, Stepan, Astrid Ludwig, Andreas Dirk Wieck, Yvon Cordier, Andreas
Ney, Hilde Hardtdegen, Anna Haab, et al. “Magnetic Properties of Gd-Doped GaN.”
Physica Status Solidi (B) 251, no. 9 (2014): 1673–84. https://doi.org/10.1002/pssb.201350205.'
ieee: S. Shvarkov et al., “Magnetic properties of Gd-doped GaN,” physica
status solidi (b), vol. 251, no. 9, pp. 1673–1684, 2014.
mla: Shvarkov, Stepan, et al. “Magnetic Properties of Gd-Doped GaN.” Physica
Status Solidi (B), vol. 251, no. 9, Wiley, 2014, pp. 1673–84, doi:10.1002/pssb.201350205.
short: S. Shvarkov, A. Ludwig, A.D. Wieck, Y. Cordier, A. Ney, H. Hardtdegen, A.
Haab, A. Trampert, R. Ranchal, J. Herfort, H.-W. Becker, D. Rogalla, D. Reuter,
Physica Status Solidi (B) 251 (2014) 1673–1684.
date_created: 2019-01-29T12:31:44Z
date_updated: 2022-01-06T07:03:29Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssb.201350205
intvolume: ' 251'
issue: '9'
language:
- iso: eng
page: 1673-1684
publication: physica status solidi (b)
publication_identifier:
issn:
- 0370-1972
publication_status: published
publisher: Wiley
status: public
title: Magnetic properties of Gd-doped GaN
type: journal_article
user_id: '42514'
volume: 251
year: '2014'
...