@article{4226,
  abstract     = {{In non-annealed 6H-SiC samples that were electron irradiated at low temperature, a new EPR signal due to a
S =1 defect center with exceptionally large zero-field splitting (D= +652104cm1,E=8104cm1) has been observed under illumination. A positive sign of D demonstrates that the spin–orbit contribution to the zero-field splitting exceeds by far that of the spin–spin interaction. A principal axis of the fine-structure tilted by 59 1 against the crystal
c -axis as well as the exceptionally high zero-field splitting D can be qualitatively understood by the occurrence of additional close-lying defect levels in defect clusters resulting in comparatively large second-order spin–orbit coupling. A tentative assignment to vacancy clusters is supported by the observed annealing behavior.}},
  author       = {{Scholle, A. and Greulich-Weber, S. and Rauls, E. and Schmidt, W.G. and Gerstmann, U.}},
  issn         = {{0921-4526}},
  journal      = {{Physica B: Condensed Matter}},
  number       = {{23-24}},
  pages        = {{4742--4744}},
  publisher    = {{Elsevier BV}},
  title        = {{{Vacancy clusters created via room temperature irradiation in 6H-SiC}}},
  doi          = {{10.1016/j.physb.2009.08.123}},
  volume       = {{404}},
  year         = {{2009}},
}

@article{13583,
  author       = {{Scholle, A. and Greulich-Weber, S. and Rauls, E. and Schmidt, Wolf Gero and Gerstmann, Uwe}},
  issn         = {{0921-4526}},
  journal      = {{Physica B: Condensed Matter}},
  pages        = {{4742--4744}},
  title        = {{{Vacancy clusters created via room temperature irradiation in 6H-SiC}}},
  doi          = {{10.1016/j.physb.2009.08.123}},
  volume       = {{404}},
  year         = {{2009}},
}

@article{8712,
  author       = {{Bryja, L. and Kubisa, M. and Ryczko, K. and Misiewicz, J. and Stȩpniewski, R. and Byszewski, M. and Potemski, M. and Reuter, Dirk and Wieck, A.}},
  issn         = {{0921-4526}},
  journal      = {{Physica B: Condensed Matter}},
  pages        = {{442--445}},
  title        = {{{Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction}}},
  doi          = {{10.1016/j.physb.2004.01.123}},
  year         = {{2004}},
}

@article{8778,
  author       = {{Heidtkamp, Christian and Lassen, Sabine and Schneider, Marcus and Reuter, Dirk and Versen, Martin and Wieck, Andreas D.}},
  issn         = {{0921-4526}},
  journal      = {{Physica B: Condensed Matter}},
  pages        = {{1726--1727}},
  title        = {{{Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems}}},
  doi          = {{10.1016/s0921-4526(99)02890-2}},
  year         = {{2002}},
}

@article{7690,
  author       = {{Heidtkamp, C. and Meier, Cedrik and Reuter, D. and Versen, M. and Hoch, S. and Diaconescu, D. and Wieck, A.D.}},
  issn         = {{0921-4526}},
  journal      = {{Physica B: Condensed Matter}},
  pages        = {{1728--1729}},
  publisher    = {{Elsevier BV}},
  title        = {{{Tunable backscattering in quantum Hall systems induced by neighbouring gates}}},
  doi          = {{10.1016/s0921-4526(99)02892-6}},
  volume       = {{284-288}},
  year         = {{2000}},
}

@article{7691,
  author       = {{Diaconescu, Dorina and Hoch, Sascha and Heidtkamp, Christian and Meier, Cedrik and Reuter, Dirk and Wieck, Andreas D}},
  issn         = {{0921-4526}},
  journal      = {{Physica B: Condensed Matter}},
  pages        = {{1906--1907}},
  publisher    = {{Elsevier BV}},
  title        = {{{A new peak in the bend resistance of a four-terminal device written by FIB implantation}}},
  doi          = {{10.1016/s0921-4526(99)03002-1}},
  volume       = {{284-288}},
  year         = {{2000}},
}