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A tentative assignment to vacancy clusters is supported by the observed annealing behavior.","lang":"eng"}],"file":[{"date_created":"2018-08-28T13:12:36Z","creator":"hclaudia","date_updated":"2018-08-28T13:12:36Z","file_name":"Vacancy clusters created via room temperature irradiation in 6H-SiC.pdf","file_id":"4227","access_level":"closed","file_size":223477,"content_type":"application/pdf","relation":"main_file","success":1}],"ddc":["530"],"language":[{"iso":"eng"}],"has_accepted_license":"1","publication_identifier":{"issn":["0921-4526"]},"publication_status":"published","intvolume":"       404","page":"4742-4744","citation":{"apa":"Scholle, A., Greulich-Weber, S., Rauls, E., Schmidt, W. G., &#38; Gerstmann, U. (2009). Vacancy clusters created via room temperature irradiation in 6H-SiC. <i>Physica B: Condensed Matter</i>, <i>404</i>(23–24), 4742–4744. <a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">https://doi.org/10.1016/j.physb.2009.08.123</a>","short":"A. Scholle, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Physica B: Condensed Matter 404 (2009) 4742–4744.","bibtex":"@article{Scholle_Greulich-Weber_Rauls_Schmidt_Gerstmann_2009, title={Vacancy clusters created via room temperature irradiation in 6H-SiC}, volume={404}, DOI={<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>}, number={23–24}, journal={Physica B: Condensed Matter}, publisher={Elsevier BV}, author={Scholle, A. and Greulich-Weber, S. and Rauls, E. and Schmidt, W.G. and Gerstmann, U.}, year={2009}, pages={4742–4744} }","mla":"Scholle, A., et al. “Vacancy Clusters Created via Room Temperature Irradiation in 6H-SiC.” <i>Physica B: Condensed Matter</i>, vol. 404, no. 23–24, Elsevier BV, 2009, pp. 4742–44, doi:<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>.","chicago":"Scholle, A., S. Greulich-Weber, E. Rauls, W.G. Schmidt, and U. Gerstmann. “Vacancy Clusters Created via Room Temperature Irradiation in 6H-SiC.” <i>Physica B: Condensed Matter</i> 404, no. 23–24 (2009): 4742–44. <a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">https://doi.org/10.1016/j.physb.2009.08.123</a>.","ieee":"A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, and U. Gerstmann, “Vacancy clusters created via room temperature irradiation in 6H-SiC,” <i>Physica B: Condensed Matter</i>, vol. 404, no. 23–24, pp. 4742–4744, 2009.","ama":"Scholle A, Greulich-Weber S, Rauls E, Schmidt WG, Gerstmann U. Vacancy clusters created via room temperature irradiation in 6H-SiC. <i>Physica B: Condensed Matter</i>. 2009;404(23-24):4742-4744. doi:<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>"},"date_updated":"2022-01-06T07:00:39Z","volume":404,"author":[{"full_name":"Scholle, A.","last_name":"Scholle","first_name":"A."},{"full_name":"Greulich-Weber, S.","last_name":"Greulich-Weber","first_name":"S."},{"first_name":"E.","last_name":"Rauls","full_name":"Rauls, E."},{"full_name":"Schmidt, W.G.","last_name":"Schmidt","first_name":"W.G."},{"first_name":"U.","last_name":"Gerstmann","full_name":"Gerstmann, U."}],"doi":"10.1016/j.physb.2009.08.123","type":"journal_article","status":"public","_id":"4226","department":[{"_id":"15"}],"user_id":"55706","article_type":"original","file_date_updated":"2018-08-28T13:12:36Z"},{"publication_identifier":{"issn":["0921-4526"]},"publication_status":"published","page":"4742-4744","intvolume":"       404","citation":{"apa":"Scholle, A., Greulich-Weber, S., Rauls, E., Schmidt, W. 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Gerstmann, Physica B: Condensed Matter 404 (2009) 4742–4744.","bibtex":"@article{Scholle_Greulich-Weber_Rauls_Schmidt_Gerstmann_2009, title={Vacancy clusters created via room temperature irradiation in 6H-SiC}, volume={404}, DOI={<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>}, journal={Physica B: Condensed Matter}, author={Scholle, A. and Greulich-Weber, S. and Rauls, E. and Schmidt, Wolf Gero and Gerstmann, Uwe}, year={2009}, pages={4742–4744} }","mla":"Scholle, A., et al. “Vacancy Clusters Created via Room Temperature Irradiation in 6H-SiC.” <i>Physica B: Condensed Matter</i>, vol. 404, 2009, pp. 4742–44, doi:<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>.","chicago":"Scholle, A., S. Greulich-Weber, E. Rauls, Wolf Gero Schmidt, and Uwe Gerstmann. “Vacancy Clusters Created via Room Temperature Irradiation in 6H-SiC.” <i>Physica B: Condensed Matter</i> 404 (2009): 4742–44. <a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">https://doi.org/10.1016/j.physb.2009.08.123</a>.","ieee":"A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, and U. Gerstmann, “Vacancy clusters created via room temperature irradiation in 6H-SiC,” <i>Physica B: Condensed Matter</i>, vol. 404, pp. 4742–4744, 2009, doi: <a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>.","ama":"Scholle A, Greulich-Weber S, Rauls E, Schmidt WG, Gerstmann U. Vacancy clusters created via room temperature irradiation in 6H-SiC. <i>Physica B: Condensed Matter</i>. 2009;404:4742-4744. doi:<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>"},"year":"2009","volume":404,"date_created":"2019-10-01T14:39:39Z","author":[{"last_name":"Scholle","full_name":"Scholle, A.","first_name":"A."},{"first_name":"S.","full_name":"Greulich-Weber, S.","last_name":"Greulich-Weber"},{"full_name":"Rauls, E.","last_name":"Rauls","first_name":"E."},{"last_name":"Schmidt","orcid":"0000-0002-2717-5076","id":"468","full_name":"Schmidt, Wolf Gero","first_name":"Wolf Gero"},{"first_name":"Uwe","full_name":"Gerstmann, Uwe","id":"171","last_name":"Gerstmann","orcid":"0000-0002-4476-223X"}],"date_updated":"2025-12-05T10:52:14Z","doi":"10.1016/j.physb.2009.08.123","title":"Vacancy clusters created via room temperature irradiation in 6H-SiC","publication":"Physica B: Condensed Matter","type":"journal_article","status":"public","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"790"},{"_id":"35"},{"_id":"27"},{"_id":"230"}],"user_id":"16199","_id":"13583","project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"language":[{"iso":"eng"}]},{"type":"journal_article","publication":"Physica B: Condensed Matter","status":"public","_id":"8712","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"language":[{"iso":"eng"}],"publication_status":"published","publication_identifier":{"issn":["0921-4526"]},"year":"2004","citation":{"chicago":"Bryja, L., M. 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Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction. <i>Physica B: Condensed Matter</i>, 442–445. <a href=\"https://doi.org/10.1016/j.physb.2004.01.123\">https://doi.org/10.1016/j.physb.2004.01.123</a>","bibtex":"@article{Bryja_Kubisa_Ryczko_Misiewicz_Stȩpniewski_Byszewski_Potemski_Reuter_Wieck_2004, title={Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction}, DOI={<a href=\"https://doi.org/10.1016/j.physb.2004.01.123\">10.1016/j.physb.2004.01.123</a>}, journal={Physica B: Condensed Matter}, author={Bryja, L. and Kubisa, M. and Ryczko, K. and Misiewicz, J. and Stȩpniewski, R. and Byszewski, M. and Potemski, M. and Reuter, Dirk and Wieck, A.}, year={2004}, pages={442–445} }","mla":"Bryja, L., et al. “Magnetic-Field-Induced Excitons in Photoluminescence from Heavily Doped p-Type Ga1−xAlxAs/GaAs Single Heterojunction.” <i>Physica B: Condensed Matter</i>, 2004, pp. 442–45, doi:<a href=\"https://doi.org/10.1016/j.physb.2004.01.123\">10.1016/j.physb.2004.01.123</a>.","short":"L. Bryja, M. Kubisa, K. Ryczko, J. Misiewicz, R. Stȩpniewski, M. Byszewski, M. Potemski, D. Reuter, A. Wieck, Physica B: Condensed Matter (2004) 442–445."},"page":"442-445","date_updated":"2022-01-06T07:03:59Z","author":[{"full_name":"Bryja, L.","last_name":"Bryja","first_name":"L."},{"full_name":"Kubisa, M.","last_name":"Kubisa","first_name":"M."},{"last_name":"Ryczko","full_name":"Ryczko, K.","first_name":"K."},{"full_name":"Misiewicz, J.","last_name":"Misiewicz","first_name":"J."},{"first_name":"R.","last_name":"Stȩpniewski","full_name":"Stȩpniewski, R."},{"first_name":"M.","full_name":"Byszewski, M.","last_name":"Byszewski"},{"first_name":"M.","full_name":"Potemski, M.","last_name":"Potemski"},{"last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk"},{"first_name":"A.","full_name":"Wieck, A.","last_name":"Wieck"}],"date_created":"2019-03-27T12:22:04Z","title":"Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction","doi":"10.1016/j.physb.2004.01.123"},{"doi":"10.1016/s0921-4526(99)02890-2","title":"Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems","author":[{"last_name":"Heidtkamp","full_name":"Heidtkamp, Christian","first_name":"Christian"},{"last_name":"Lassen","full_name":"Lassen, Sabine","first_name":"Sabine"},{"last_name":"Schneider","full_name":"Schneider, Marcus","first_name":"Marcus"},{"first_name":"Dirk","id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter"},{"last_name":"Versen","full_name":"Versen, Martin","first_name":"Martin"},{"first_name":"Andreas D.","full_name":"Wieck, Andreas D.","last_name":"Wieck"}],"date_created":"2019-04-01T08:18:28Z","date_updated":"2022-01-06T07:04:00Z","citation":{"chicago":"Heidtkamp, Christian, Sabine Lassen, Marcus Schneider, Dirk Reuter, Martin Versen, and Andreas D. Wieck. “Dependence of the Longitudinal Resistance on Edge Potential and Electron Density in Quantum Hall Systems.” <i>Physica B: Condensed Matter</i>, 2002, 1726–27. <a href=\"https://doi.org/10.1016/s0921-4526(99)02890-2\">https://doi.org/10.1016/s0921-4526(99)02890-2</a>.","ieee":"C. Heidtkamp, S. Lassen, M. Schneider, D. Reuter, M. Versen, and A. D. Wieck, “Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems,” <i>Physica B: Condensed Matter</i>, pp. 1726–1727, 2002.","ama":"Heidtkamp C, Lassen S, Schneider M, Reuter D, Versen M, Wieck AD. Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems. <i>Physica B: Condensed Matter</i>. 2002:1726-1727. doi:<a href=\"https://doi.org/10.1016/s0921-4526(99)02890-2\">10.1016/s0921-4526(99)02890-2</a>","apa":"Heidtkamp, C., Lassen, S., Schneider, M., Reuter, D., Versen, M., &#38; Wieck, A. D. (2002). Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems. <i>Physica B: Condensed Matter</i>, 1726–1727. <a href=\"https://doi.org/10.1016/s0921-4526(99)02890-2\">https://doi.org/10.1016/s0921-4526(99)02890-2</a>","bibtex":"@article{Heidtkamp_Lassen_Schneider_Reuter_Versen_Wieck_2002, title={Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems}, DOI={<a href=\"https://doi.org/10.1016/s0921-4526(99)02890-2\">10.1016/s0921-4526(99)02890-2</a>}, journal={Physica B: Condensed Matter}, author={Heidtkamp, Christian and Lassen, Sabine and Schneider, Marcus and Reuter, Dirk and Versen, Martin and Wieck, Andreas D.}, year={2002}, pages={1726–1727} }","mla":"Heidtkamp, Christian, et al. “Dependence of the Longitudinal Resistance on Edge Potential and Electron Density in Quantum Hall Systems.” <i>Physica B: Condensed Matter</i>, 2002, pp. 1726–27, doi:<a href=\"https://doi.org/10.1016/s0921-4526(99)02890-2\">10.1016/s0921-4526(99)02890-2</a>.","short":"C. Heidtkamp, S. Lassen, M. Schneider, D. Reuter, M. Versen, A.D. Wieck, Physica B: Condensed Matter (2002) 1726–1727."},"page":"1726-1727","year":"2002","publication_status":"published","publication_identifier":{"issn":["0921-4526"]},"language":[{"iso":"eng"}],"user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"8778","status":"public","type":"journal_article","publication":"Physica B: Condensed Matter"},{"page":"1728-1729","citation":{"apa":"Heidtkamp, C., Meier, C., Reuter, D., Versen, M., Hoch, S., Diaconescu, D., &#38; Wieck, A. D. (2000). Tunable backscattering in quantum Hall systems induced by neighbouring gates. <i>Physica B: Condensed Matter</i>, <i>284</i>–<i>288</i>, 1728–1729. <a href=\"https://doi.org/10.1016/s0921-4526(99)02892-6\">https://doi.org/10.1016/s0921-4526(99)02892-6</a>","short":"C. Heidtkamp, C. Meier, D. Reuter, M. Versen, S. Hoch, D. Diaconescu, A.D. Wieck, Physica B: Condensed Matter 284–288 (2000) 1728–1729.","mla":"Heidtkamp, C., et al. “Tunable Backscattering in Quantum Hall Systems Induced by Neighbouring Gates.” <i>Physica B: Condensed Matter</i>, vol. 284–288, Elsevier BV, 2000, pp. 1728–29, doi:<a href=\"https://doi.org/10.1016/s0921-4526(99)02892-6\">10.1016/s0921-4526(99)02892-6</a>.","bibtex":"@article{Heidtkamp_Meier_Reuter_Versen_Hoch_Diaconescu_Wieck_2000, title={Tunable backscattering in quantum Hall systems induced by neighbouring gates}, volume={284–288}, DOI={<a href=\"https://doi.org/10.1016/s0921-4526(99)02892-6\">10.1016/s0921-4526(99)02892-6</a>}, journal={Physica B: Condensed Matter}, publisher={Elsevier BV}, author={Heidtkamp, C. and Meier, Cedrik and Reuter, D. and Versen, M. and Hoch, S. and Diaconescu, D. and Wieck, A.D.}, year={2000}, pages={1728–1729} }","ama":"Heidtkamp C, Meier C, Reuter D, et al. Tunable backscattering in quantum Hall systems induced by neighbouring gates. <i>Physica B: Condensed Matter</i>. 2000;284-288:1728-1729. doi:<a href=\"https://doi.org/10.1016/s0921-4526(99)02892-6\">10.1016/s0921-4526(99)02892-6</a>","ieee":"C. Heidtkamp <i>et al.</i>, “Tunable backscattering in quantum Hall systems induced by neighbouring gates,” <i>Physica B: Condensed Matter</i>, vol. 284–288, pp. 1728–1729, 2000.","chicago":"Heidtkamp, C., Cedrik Meier, D. Reuter, M. Versen, S. Hoch, D. Diaconescu, and A.D. Wieck. “Tunable Backscattering in Quantum Hall Systems Induced by Neighbouring Gates.” <i>Physica B: Condensed Matter</i> 284–288 (2000): 1728–29. <a href=\"https://doi.org/10.1016/s0921-4526(99)02892-6\">https://doi.org/10.1016/s0921-4526(99)02892-6</a>."},"year":"2000","publication_identifier":{"issn":["0921-4526"]},"publication_status":"published","doi":"10.1016/s0921-4526(99)02892-6","title":"Tunable backscattering in quantum Hall systems induced by neighbouring gates","volume":"284-288","date_created":"2019-02-13T14:55:39Z","author":[{"first_name":"C.","last_name":"Heidtkamp","full_name":"Heidtkamp, C."},{"first_name":"Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","id":"20798"},{"first_name":"D.","full_name":"Reuter, D.","last_name":"Reuter"},{"first_name":"M.","last_name":"Versen","full_name":"Versen, M."},{"full_name":"Hoch, S.","last_name":"Hoch","first_name":"S."},{"first_name":"D.","full_name":"Diaconescu, D.","last_name":"Diaconescu"},{"full_name":"Wieck, A.D.","last_name":"Wieck","first_name":"A.D."}],"date_updated":"2022-01-06T07:03:44Z","publisher":"Elsevier BV","status":"public","publication":"Physica B: Condensed Matter","type":"journal_article","language":[{"iso":"eng"}],"extern":"1","department":[{"_id":"15"}],"user_id":"20798","_id":"7690"},{"type":"journal_article","publication":"Physica B: Condensed Matter","status":"public","_id":"7691","user_id":"20798","department":[{"_id":"15"}],"language":[{"iso":"eng"}],"extern":"1","publication_status":"published","publication_identifier":{"issn":["0921-4526"]},"year":"2000","citation":{"bibtex":"@article{Diaconescu_Hoch_Heidtkamp_Meier_Reuter_Wieck_2000, title={A new peak in the bend resistance of a four-terminal device written by FIB implantation}, volume={284–288}, DOI={<a href=\"https://doi.org/10.1016/s0921-4526(99)03002-1\">10.1016/s0921-4526(99)03002-1</a>}, journal={Physica B: Condensed Matter}, publisher={Elsevier BV}, author={Diaconescu, Dorina and Hoch, Sascha and Heidtkamp, Christian and Meier, Cedrik and Reuter, Dirk and Wieck, Andreas D}, year={2000}, pages={1906–1907} }","short":"D. 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