[{"title":"Vacancy clusters created via room temperature irradiation in 6H-SiC","publisher":"Elsevier BV","date_created":"2018-08-28T13:11:31Z","year":"2009","issue":"23-24","ddc":["530"],"language":[{"iso":"eng"}],"abstract":[{"text":"In non-annealed 6H-SiC samples that were electron irradiated at low temperature, a new EPR signal due to a\r\nS =1 defect center with exceptionally large zero-field splitting (D= +652\u000210\u00034cm\u00031,E=\u00038\u000210\u00034cm\u00031) has been observed under illumination. A positive sign of D demonstrates that the spin–orbit contribution to the zero-field splitting exceeds by far that of the spin–spin interaction. A principal axis of the fine-structure tilted by 59 1 against the crystal\r\nc -axis as well as the exceptionally high zero-field splitting D can be qualitatively understood by the occurrence of additional close-lying defect levels in defect clusters resulting in comparatively large second-order spin–orbit coupling. A tentative assignment to vacancy clusters is supported by the observed annealing behavior.","lang":"eng"}],"file":[{"creator":"hclaudia","date_created":"2018-08-28T13:12:36Z","date_updated":"2018-08-28T13:12:36Z","access_level":"closed","file_id":"4227","file_name":"Vacancy clusters created via room temperature irradiation in 6H-SiC.pdf","file_size":223477,"content_type":"application/pdf","relation":"main_file","success":1}],"publication":"Physica B: Condensed Matter","doi":"10.1016/j.physb.2009.08.123","date_updated":"2022-01-06T07:00:39Z","author":[{"first_name":"A.","last_name":"Scholle","full_name":"Scholle, A."},{"full_name":"Greulich-Weber, S.","last_name":"Greulich-Weber","first_name":"S."},{"last_name":"Rauls","full_name":"Rauls, E.","first_name":"E."},{"first_name":"W.G.","last_name":"Schmidt","full_name":"Schmidt, W.G."},{"first_name":"U.","full_name":"Gerstmann, U.","last_name":"Gerstmann"}],"volume":404,"citation":{"chicago":"Scholle, A., S. Greulich-Weber, E. Rauls, W.G. Schmidt, and U. Gerstmann. “Vacancy Clusters Created via Room Temperature Irradiation in 6H-SiC.” <i>Physica B: Condensed Matter</i> 404, no. 23–24 (2009): 4742–44. <a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">https://doi.org/10.1016/j.physb.2009.08.123</a>.","ieee":"A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, and U. Gerstmann, “Vacancy clusters created via room temperature irradiation in 6H-SiC,” <i>Physica B: Condensed Matter</i>, vol. 404, no. 23–24, pp. 4742–4744, 2009.","ama":"Scholle A, Greulich-Weber S, Rauls E, Schmidt WG, Gerstmann U. Vacancy clusters created via room temperature irradiation in 6H-SiC. <i>Physica B: Condensed Matter</i>. 2009;404(23-24):4742-4744. doi:<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>","bibtex":"@article{Scholle_Greulich-Weber_Rauls_Schmidt_Gerstmann_2009, title={Vacancy clusters created via room temperature irradiation in 6H-SiC}, volume={404}, DOI={<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>}, number={23–24}, journal={Physica B: Condensed Matter}, publisher={Elsevier BV}, author={Scholle, A. and Greulich-Weber, S. and Rauls, E. and Schmidt, W.G. and Gerstmann, U.}, year={2009}, pages={4742–4744} }","short":"A. Scholle, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Physica B: Condensed Matter 404 (2009) 4742–4744.","mla":"Scholle, A., et al. “Vacancy Clusters Created via Room Temperature Irradiation in 6H-SiC.” <i>Physica B: Condensed Matter</i>, vol. 404, no. 23–24, Elsevier BV, 2009, pp. 4742–44, doi:<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>.","apa":"Scholle, A., Greulich-Weber, S., Rauls, E., Schmidt, W. G., &#38; Gerstmann, U. (2009). Vacancy clusters created via room temperature irradiation in 6H-SiC. <i>Physica B: Condensed Matter</i>, <i>404</i>(23–24), 4742–4744. <a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">https://doi.org/10.1016/j.physb.2009.08.123</a>"},"page":"4742-4744","intvolume":"       404","publication_status":"published","publication_identifier":{"issn":["0921-4526"]},"has_accepted_license":"1","article_type":"original","file_date_updated":"2018-08-28T13:12:36Z","_id":"4226","user_id":"55706","department":[{"_id":"15"}],"status":"public","type":"journal_article"},{"publication_status":"published","publication_identifier":{"issn":["0921-4526"]},"citation":{"ieee":"A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, and U. 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Vacancy clusters created via room temperature irradiation in 6H-SiC. <i>Physica B: Condensed Matter</i>, <i>404</i>, 4742–4744. <a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">https://doi.org/10.1016/j.physb.2009.08.123</a>","bibtex":"@article{Scholle_Greulich-Weber_Rauls_Schmidt_Gerstmann_2009, title={Vacancy clusters created via room temperature irradiation in 6H-SiC}, volume={404}, DOI={<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>}, journal={Physica B: Condensed Matter}, author={Scholle, A. and Greulich-Weber, S. and Rauls, E. and Schmidt, Wolf Gero and Gerstmann, Uwe}, year={2009}, pages={4742–4744} }","short":"A. Scholle, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Physica B: Condensed Matter 404 (2009) 4742–4744.","mla":"Scholle, A., et al. “Vacancy Clusters Created via Room Temperature Irradiation in 6H-SiC.” <i>Physica B: Condensed Matter</i>, vol. 404, 2009, pp. 4742–44, doi:<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>."},"page":"4742-4744","intvolume":"       404","year":"2009","author":[{"first_name":"A.","last_name":"Scholle","full_name":"Scholle, A."},{"full_name":"Greulich-Weber, S.","last_name":"Greulich-Weber","first_name":"S."},{"full_name":"Rauls, E.","last_name":"Rauls","first_name":"E."},{"first_name":"Wolf Gero","id":"468","full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt"},{"first_name":"Uwe","orcid":"0000-0002-4476-223X","last_name":"Gerstmann","id":"171","full_name":"Gerstmann, Uwe"}],"date_created":"2019-10-01T14:39:39Z","volume":404,"date_updated":"2025-12-05T10:52:14Z","doi":"10.1016/j.physb.2009.08.123","title":"Vacancy clusters created via room temperature irradiation in 6H-SiC","type":"journal_article","publication":"Physica B: Condensed Matter","status":"public","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"790"},{"_id":"35"},{"_id":"27"},{"_id":"230"}],"project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"_id":"13583","language":[{"iso":"eng"}]},{"_id":"8712","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"language":[{"iso":"eng"}],"type":"journal_article","publication":"Physica B: Condensed Matter","status":"public","date_updated":"2022-01-06T07:03:59Z","author":[{"full_name":"Bryja, L.","last_name":"Bryja","first_name":"L."},{"last_name":"Kubisa","full_name":"Kubisa, M.","first_name":"M."},{"full_name":"Ryczko, K.","last_name":"Ryczko","first_name":"K."},{"first_name":"J.","full_name":"Misiewicz, J.","last_name":"Misiewicz"},{"first_name":"R.","last_name":"Stȩpniewski","full_name":"Stȩpniewski, R."},{"last_name":"Byszewski","full_name":"Byszewski, M.","first_name":"M."},{"first_name":"M.","last_name":"Potemski","full_name":"Potemski, M."},{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"},{"full_name":"Wieck, A.","last_name":"Wieck","first_name":"A."}],"date_created":"2019-03-27T12:22:04Z","title":"Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction","doi":"10.1016/j.physb.2004.01.123","publication_status":"published","publication_identifier":{"issn":["0921-4526"]},"year":"2004","citation":{"bibtex":"@article{Bryja_Kubisa_Ryczko_Misiewicz_Stȩpniewski_Byszewski_Potemski_Reuter_Wieck_2004, title={Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction}, DOI={<a href=\"https://doi.org/10.1016/j.physb.2004.01.123\">10.1016/j.physb.2004.01.123</a>}, journal={Physica B: Condensed Matter}, author={Bryja, L. and Kubisa, M. and Ryczko, K. and Misiewicz, J. and Stȩpniewski, R. and Byszewski, M. and Potemski, M. and Reuter, Dirk and Wieck, A.}, year={2004}, pages={442–445} }","short":"L. 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Bryja <i>et al.</i>, “Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction,” <i>Physica B: Condensed Matter</i>, pp. 442–445, 2004."},"page":"442-445"},{"status":"public","publication":"Physica B: Condensed Matter","type":"journal_article","language":[{"iso":"eng"}],"_id":"8778","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","year":"2002","page":"1726-1727","citation":{"ama":"Heidtkamp C, Lassen S, Schneider M, Reuter D, Versen M, Wieck AD. Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems. <i>Physica B: Condensed Matter</i>. 2002:1726-1727. doi:<a href=\"https://doi.org/10.1016/s0921-4526(99)02890-2\">10.1016/s0921-4526(99)02890-2</a>","chicago":"Heidtkamp, Christian, Sabine Lassen, Marcus Schneider, Dirk Reuter, Martin Versen, and Andreas D. Wieck. “Dependence of the Longitudinal Resistance on Edge Potential and Electron Density in Quantum Hall Systems.” <i>Physica B: Condensed Matter</i>, 2002, 1726–27. <a href=\"https://doi.org/10.1016/s0921-4526(99)02890-2\">https://doi.org/10.1016/s0921-4526(99)02890-2</a>.","ieee":"C. Heidtkamp, S. Lassen, M. Schneider, D. Reuter, M. Versen, and A. D. Wieck, “Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems,” <i>Physica B: Condensed Matter</i>, pp. 1726–1727, 2002.","apa":"Heidtkamp, C., Lassen, S., Schneider, M., Reuter, D., Versen, M., &#38; Wieck, A. D. (2002). Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems. <i>Physica B: Condensed Matter</i>, 1726–1727. <a href=\"https://doi.org/10.1016/s0921-4526(99)02890-2\">https://doi.org/10.1016/s0921-4526(99)02890-2</a>","bibtex":"@article{Heidtkamp_Lassen_Schneider_Reuter_Versen_Wieck_2002, title={Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems}, DOI={<a href=\"https://doi.org/10.1016/s0921-4526(99)02890-2\">10.1016/s0921-4526(99)02890-2</a>}, journal={Physica B: Condensed Matter}, author={Heidtkamp, Christian and Lassen, Sabine and Schneider, Marcus and Reuter, Dirk and Versen, Martin and Wieck, Andreas D.}, year={2002}, pages={1726–1727} }","mla":"Heidtkamp, Christian, et al. “Dependence of the Longitudinal Resistance on Edge Potential and Electron Density in Quantum Hall Systems.” <i>Physica B: Condensed Matter</i>, 2002, pp. 1726–27, doi:<a href=\"https://doi.org/10.1016/s0921-4526(99)02890-2\">10.1016/s0921-4526(99)02890-2</a>.","short":"C. 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Reuter, M. Versen, S. Hoch, D. Diaconescu, and A.D. Wieck. “Tunable Backscattering in Quantum Hall Systems Induced by Neighbouring Gates.” <i>Physica B: Condensed Matter</i> 284–288 (2000): 1728–29. <a href=\"https://doi.org/10.1016/s0921-4526(99)02892-6\">https://doi.org/10.1016/s0921-4526(99)02892-6</a>.","ieee":"C. Heidtkamp <i>et al.</i>, “Tunable backscattering in quantum Hall systems induced by neighbouring gates,” <i>Physica B: Condensed Matter</i>, vol. 284–288, pp. 1728–1729, 2000.","ama":"Heidtkamp C, Meier C, Reuter D, et al. Tunable backscattering in quantum Hall systems induced by neighbouring gates. <i>Physica B: Condensed Matter</i>. 2000;284-288:1728-1729. doi:<a href=\"https://doi.org/10.1016/s0921-4526(99)02892-6\">10.1016/s0921-4526(99)02892-6</a>","apa":"Heidtkamp, C., Meier, C., Reuter, D., Versen, M., Hoch, S., Diaconescu, D., &#38; Wieck, A. D. (2000). 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Wieck, Physica B: Condensed Matter 284–288 (2000) 1728–1729.","mla":"Heidtkamp, C., et al. “Tunable Backscattering in Quantum Hall Systems Induced by Neighbouring Gates.” <i>Physica B: Condensed Matter</i>, vol. 284–288, Elsevier BV, 2000, pp. 1728–29, doi:<a href=\"https://doi.org/10.1016/s0921-4526(99)02892-6\">10.1016/s0921-4526(99)02892-6</a>.","bibtex":"@article{Heidtkamp_Meier_Reuter_Versen_Hoch_Diaconescu_Wieck_2000, title={Tunable backscattering in quantum Hall systems induced by neighbouring gates}, volume={284–288}, DOI={<a href=\"https://doi.org/10.1016/s0921-4526(99)02892-6\">10.1016/s0921-4526(99)02892-6</a>}, journal={Physica B: Condensed Matter}, publisher={Elsevier BV}, author={Heidtkamp, C. and Meier, Cedrik and Reuter, D. and Versen, M. and Hoch, S. and Diaconescu, D. and Wieck, A.D.}, year={2000}, pages={1728–1729} }"},"page":"1728-1729","year":"2000","publication_status":"published","publication_identifier":{"issn":["0921-4526"]},"doi":"10.1016/s0921-4526(99)02892-6","title":"Tunable backscattering in quantum Hall systems induced by neighbouring gates","date_created":"2019-02-13T14:55:39Z","author":[{"full_name":"Heidtkamp, C.","last_name":"Heidtkamp","first_name":"C."},{"first_name":"Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","id":"20798"},{"last_name":"Reuter","full_name":"Reuter, D.","first_name":"D."},{"first_name":"M.","last_name":"Versen","full_name":"Versen, M."},{"first_name":"S.","full_name":"Hoch, S.","last_name":"Hoch"},{"first_name":"D.","full_name":"Diaconescu, D.","last_name":"Diaconescu"},{"last_name":"Wieck","full_name":"Wieck, A.D.","first_name":"A.D."}],"volume":"284-288","publisher":"Elsevier BV","date_updated":"2022-01-06T07:03:44Z"},{"publication_identifier":{"issn":["0921-4526"]},"publication_status":"published","page":"1906-1907","citation":{"mla":"Diaconescu, Dorina, et al. “A New Peak in the Bend Resistance of a Four-Terminal Device Written by FIB Implantation.” <i>Physica B: Condensed Matter</i>, vol. 284–288, Elsevier BV, 2000, pp. 1906–07, doi:<a href=\"https://doi.org/10.1016/s0921-4526(99)03002-1\">10.1016/s0921-4526(99)03002-1</a>.","bibtex":"@article{Diaconescu_Hoch_Heidtkamp_Meier_Reuter_Wieck_2000, title={A new peak in the bend resistance of a four-terminal device written by FIB implantation}, volume={284–288}, DOI={<a href=\"https://doi.org/10.1016/s0921-4526(99)03002-1\">10.1016/s0921-4526(99)03002-1</a>}, journal={Physica B: Condensed Matter}, publisher={Elsevier BV}, author={Diaconescu, Dorina and Hoch, Sascha and Heidtkamp, Christian and Meier, Cedrik and Reuter, Dirk and Wieck, Andreas D}, year={2000}, pages={1906–1907} }","short":"D. 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A new peak in the bend resistance of a four-terminal device written by FIB implantation. <i>Physica B: Condensed Matter</i>. 2000;284-288:1906-1907. doi:<a href=\"https://doi.org/10.1016/s0921-4526(99)03002-1\">10.1016/s0921-4526(99)03002-1</a>","chicago":"Diaconescu, Dorina, Sascha Hoch, Christian Heidtkamp, Cedrik Meier, Dirk Reuter, and Andreas D Wieck. “A New Peak in the Bend Resistance of a Four-Terminal Device Written by FIB Implantation.” <i>Physica B: Condensed Matter</i> 284–288 (2000): 1906–7. <a href=\"https://doi.org/10.1016/s0921-4526(99)03002-1\">https://doi.org/10.1016/s0921-4526(99)03002-1</a>.","ieee":"D. Diaconescu, S. Hoch, C. Heidtkamp, C. Meier, D. Reuter, and A. D. 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