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Rauls, W.G. Schmidt, U. Gerstmann, Physica B: Condensed Matter 404 (2009) 4742–4744.","mla":"Scholle, A., et al. “Vacancy Clusters Created via Room Temperature Irradiation in 6H-SiC.” <i>Physica B: Condensed Matter</i>, vol. 404, no. 23–24, Elsevier BV, 2009, pp. 4742–44, doi:<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>.","bibtex":"@article{Scholle_Greulich-Weber_Rauls_Schmidt_Gerstmann_2009, title={Vacancy clusters created via room temperature irradiation in 6H-SiC}, volume={404}, DOI={<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>}, number={23–24}, journal={Physica B: Condensed Matter}, publisher={Elsevier BV}, author={Scholle, A. and Greulich-Weber, S. and Rauls, E. and Schmidt, W.G. and Gerstmann, U.}, year={2009}, pages={4742–4744} }","ama":"Scholle A, Greulich-Weber S, Rauls E, Schmidt WG, Gerstmann U. Vacancy clusters created via room temperature irradiation in 6H-SiC. <i>Physica B: Condensed Matter</i>. 2009;404(23-24):4742-4744. doi:<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>"},"status":"public","has_accepted_license":"1","page":"4742-4744","_id":"4226","publisher":"Elsevier BV","user_id":"55706","ddc":["530"],"volume":404,"publication":"Physica B: Condensed Matter","issue":"23-24","abstract":[{"text":"In non-annealed 6H-SiC samples that were electron irradiated at low temperature, a new EPR signal due to a\r\nS =1 defect center with exceptionally large zero-field splitting (D= +652\u000210\u00034cm\u00031,E=\u00038\u000210\u00034cm\u00031) has been observed under illumination. A positive sign of D demonstrates that the spin–orbit contribution to the zero-field splitting exceeds by far that of the spin–spin interaction. A principal axis of the fine-structure tilted by 59 1 against the crystal\r\nc -axis as well as the exceptionally high zero-field splitting D can be qualitatively understood by the occurrence of additional close-lying defect levels in defect clusters resulting in comparatively large second-order spin–orbit coupling. A tentative assignment to vacancy clusters is supported by the observed annealing behavior.","lang":"eng"}],"file":[{"creator":"hclaudia","date_created":"2018-08-28T13:12:36Z","file_name":"Vacancy clusters created via room temperature irradiation in 6H-SiC.pdf","file_size":223477,"access_level":"closed","relation":"main_file","date_updated":"2018-08-28T13:12:36Z","file_id":"4227","success":1,"content_type":"application/pdf"}],"date_created":"2018-08-28T13:11:31Z","type":"journal_article","department":[{"_id":"15"}],"title":"Vacancy clusters created via room temperature irradiation in 6H-SiC","year":"2009","publication_identifier":{"issn":["0921-4526"]},"author":[{"first_name":"A.","last_name":"Scholle","full_name":"Scholle, A."},{"full_name":"Greulich-Weber, S.","last_name":"Greulich-Weber","first_name":"S."},{"full_name":"Rauls, E.","first_name":"E.","last_name":"Rauls"},{"full_name":"Schmidt, W.G.","last_name":"Schmidt","first_name":"W.G."},{"full_name":"Gerstmann, U.","first_name":"U.","last_name":"Gerstmann"}],"publication_status":"published","date_updated":"2022-01-06T07:00:39Z","article_type":"original","intvolume":"       404","language":[{"iso":"eng"}],"doi":"10.1016/j.physb.2009.08.123"},{"page":"4742-4744","language":[{"iso":"eng"}],"_id":"13583","user_id":"16199","doi":"10.1016/j.physb.2009.08.123","volume":404,"status":"public","title":"Vacancy clusters created via room temperature irradiation in 6H-SiC","year":"2009","author":[{"first_name":"A.","last_name":"Scholle","full_name":"Scholle, A."},{"last_name":"Greulich-Weber","first_name":"S.","full_name":"Greulich-Weber, S."},{"last_name":"Rauls","first_name":"E.","full_name":"Rauls, E."},{"id":"468","full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero","last_name":"Schmidt"},{"last_name":"Gerstmann","orcid":"0000-0002-4476-223X","first_name":"Uwe","full_name":"Gerstmann, Uwe","id":"171"}],"publication_identifier":{"issn":["0921-4526"]},"publication_status":"published","date_updated":"2025-12-05T10:52:14Z","intvolume":"       404","date_created":"2019-10-01T14:39:39Z","type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"790"},{"_id":"35"},{"_id":"27"},{"_id":"230"}],"publication":"Physica B: Condensed Matter","citation":{"apa":"Scholle, A., Greulich-Weber, S., Rauls, E., Schmidt, W. 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Rauls, Wolf Gero Schmidt, and Uwe Gerstmann. “Vacancy Clusters Created via Room Temperature Irradiation in 6H-SiC.” <i>Physica B: Condensed Matter</i> 404 (2009): 4742–44. <a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">https://doi.org/10.1016/j.physb.2009.08.123</a>.","mla":"Scholle, A., et al. “Vacancy Clusters Created via Room Temperature Irradiation in 6H-SiC.” <i>Physica B: Condensed Matter</i>, vol. 404, 2009, pp. 4742–44, doi:<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>.","ama":"Scholle A, Greulich-Weber S, Rauls E, Schmidt WG, Gerstmann U. Vacancy clusters created via room temperature irradiation in 6H-SiC. <i>Physica B: Condensed Matter</i>. 2009;404:4742-4744. doi:<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>","bibtex":"@article{Scholle_Greulich-Weber_Rauls_Schmidt_Gerstmann_2009, title={Vacancy clusters created via room temperature irradiation in 6H-SiC}, volume={404}, DOI={<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>}, journal={Physica B: Condensed Matter}, author={Scholle, A. and Greulich-Weber, S. and Rauls, E. and Schmidt, Wolf Gero and Gerstmann, Uwe}, year={2009}, pages={4742–4744} }"},"project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}]},{"publication_status":"published","date_updated":"2022-01-06T07:03:59Z","publication_identifier":{"issn":["0921-4526"]},"author":[{"first_name":"L.","last_name":"Bryja","full_name":"Bryja, L."},{"first_name":"M.","last_name":"Kubisa","full_name":"Kubisa, M."},{"first_name":"K.","last_name":"Ryczko","full_name":"Ryczko, K."},{"full_name":"Misiewicz, J.","first_name":"J.","last_name":"Misiewicz"},{"first_name":"R.","last_name":"Stȩpniewski","full_name":"Stȩpniewski, R."},{"full_name":"Byszewski, M.","first_name":"M.","last_name":"Byszewski"},{"full_name":"Potemski, M.","first_name":"M.","last_name":"Potemski"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"full_name":"Wieck, A.","last_name":"Wieck","first_name":"A."}],"year":"2004","status":"public","title":"Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction","user_id":"42514","doi":"10.1016/j.physb.2004.01.123","language":[{"iso":"eng"}],"_id":"8712","page":"442-445","citation":{"mla":"Bryja, L., et al. “Magnetic-Field-Induced Excitons in Photoluminescence from Heavily Doped p-Type Ga1−xAlxAs/GaAs Single Heterojunction.” <i>Physica B: Condensed Matter</i>, 2004, pp. 442–45, doi:<a href=\"https://doi.org/10.1016/j.physb.2004.01.123\">10.1016/j.physb.2004.01.123</a>.","apa":"Bryja, L., Kubisa, M., Ryczko, K., Misiewicz, J., Stȩpniewski, R., Byszewski, M., … Wieck, A. (2004). Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction. <i>Physica B: Condensed Matter</i>, 442–445. <a href=\"https://doi.org/10.1016/j.physb.2004.01.123\">https://doi.org/10.1016/j.physb.2004.01.123</a>","ieee":"L. Bryja <i>et al.</i>, “Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction,” <i>Physica B: Condensed Matter</i>, pp. 442–445, 2004.","short":"L. Bryja, M. Kubisa, K. Ryczko, J. Misiewicz, R. Stȩpniewski, M. Byszewski, M. Potemski, D. Reuter, A. Wieck, Physica B: Condensed Matter (2004) 442–445.","ama":"Bryja L, Kubisa M, Ryczko K, et al. Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction. <i>Physica B: Condensed Matter</i>. 2004:442-445. doi:<a href=\"https://doi.org/10.1016/j.physb.2004.01.123\">10.1016/j.physb.2004.01.123</a>","chicago":"Bryja, L., M. Kubisa, K. Ryczko, J. Misiewicz, R. Stȩpniewski, M. Byszewski, M. Potemski, Dirk Reuter, and A. Wieck. “Magnetic-Field-Induced Excitons in Photoluminescence from Heavily Doped p-Type Ga1−xAlxAs/GaAs Single Heterojunction.” <i>Physica B: Condensed Matter</i>, 2004, 442–45. <a href=\"https://doi.org/10.1016/j.physb.2004.01.123\">https://doi.org/10.1016/j.physb.2004.01.123</a>.","bibtex":"@article{Bryja_Kubisa_Ryczko_Misiewicz_Stȩpniewski_Byszewski_Potemski_Reuter_Wieck_2004, title={Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction}, DOI={<a href=\"https://doi.org/10.1016/j.physb.2004.01.123\">10.1016/j.physb.2004.01.123</a>}, journal={Physica B: Condensed Matter}, author={Bryja, L. and Kubisa, M. and Ryczko, K. and Misiewicz, J. and Stȩpniewski, R. and Byszewski, M. and Potemski, M. and Reuter, Dirk and Wieck, A.}, year={2004}, pages={442–445} }"},"publication":"Physica B: Condensed Matter","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-03-27T12:22:04Z"},{"publication":"Physica B: Condensed Matter","citation":{"ieee":"C. Heidtkamp, S. Lassen, M. Schneider, D. Reuter, M. Versen, and A. D. Wieck, “Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems,” <i>Physica B: Condensed Matter</i>, pp. 1726–1727, 2002.","mla":"Heidtkamp, Christian, et al. “Dependence of the Longitudinal Resistance on Edge Potential and Electron Density in Quantum Hall Systems.” <i>Physica B: Condensed Matter</i>, 2002, pp. 1726–27, doi:<a href=\"https://doi.org/10.1016/s0921-4526(99)02890-2\">10.1016/s0921-4526(99)02890-2</a>.","apa":"Heidtkamp, C., Lassen, S., Schneider, M., Reuter, D., Versen, M., &#38; Wieck, A. D. (2002). Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems. <i>Physica B: Condensed Matter</i>, 1726–1727. <a href=\"https://doi.org/10.1016/s0921-4526(99)02890-2\">https://doi.org/10.1016/s0921-4526(99)02890-2</a>","bibtex":"@article{Heidtkamp_Lassen_Schneider_Reuter_Versen_Wieck_2002, title={Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems}, DOI={<a href=\"https://doi.org/10.1016/s0921-4526(99)02890-2\">10.1016/s0921-4526(99)02890-2</a>}, journal={Physica B: Condensed Matter}, author={Heidtkamp, Christian and Lassen, Sabine and Schneider, Marcus and Reuter, Dirk and Versen, Martin and Wieck, Andreas D.}, year={2002}, pages={1726–1727} }","chicago":"Heidtkamp, Christian, Sabine Lassen, Marcus Schneider, Dirk Reuter, Martin Versen, and Andreas D. Wieck. “Dependence of the Longitudinal Resistance on Edge Potential and Electron Density in Quantum Hall Systems.” <i>Physica B: Condensed Matter</i>, 2002, 1726–27. <a href=\"https://doi.org/10.1016/s0921-4526(99)02890-2\">https://doi.org/10.1016/s0921-4526(99)02890-2</a>.","short":"C. Heidtkamp, S. Lassen, M. Schneider, D. Reuter, M. Versen, A.D. Wieck, Physica B: Condensed Matter (2002) 1726–1727.","ama":"Heidtkamp C, Lassen S, Schneider M, Reuter D, Versen M, Wieck AD. Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems. <i>Physica B: Condensed Matter</i>. 2002:1726-1727. doi:<a href=\"https://doi.org/10.1016/s0921-4526(99)02890-2\">10.1016/s0921-4526(99)02890-2</a>"},"date_created":"2019-04-01T08:18:28Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"title":"Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems","year":"2002","status":"public","author":[{"last_name":"Heidtkamp","first_name":"Christian","full_name":"Heidtkamp, Christian"},{"full_name":"Lassen, Sabine","last_name":"Lassen","first_name":"Sabine"},{"first_name":"Marcus","last_name":"Schneider","full_name":"Schneider, Marcus"},{"id":"37763","last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk"},{"first_name":"Martin","last_name":"Versen","full_name":"Versen, Martin"},{"first_name":"Andreas D.","last_name":"Wieck","full_name":"Wieck, Andreas D."}],"publication_identifier":{"issn":["0921-4526"]},"publication_status":"published","date_updated":"2022-01-06T07:04:00Z","page":"1726-1727","language":[{"iso":"eng"}],"_id":"8778","user_id":"42514","doi":"10.1016/s0921-4526(99)02890-2"},{"extern":"1","citation":{"bibtex":"@article{Heidtkamp_Meier_Reuter_Versen_Hoch_Diaconescu_Wieck_2000, title={Tunable backscattering in quantum Hall systems induced by neighbouring gates}, volume={284–288}, DOI={<a href=\"https://doi.org/10.1016/s0921-4526(99)02892-6\">10.1016/s0921-4526(99)02892-6</a>}, journal={Physica B: Condensed Matter}, publisher={Elsevier BV}, author={Heidtkamp, C. and Meier, Cedrik and Reuter, D. and Versen, M. and Hoch, S. and Diaconescu, D. and Wieck, A.D.}, year={2000}, pages={1728–1729} }","ama":"Heidtkamp C, Meier C, Reuter D, et al. Tunable backscattering in quantum Hall systems induced by neighbouring gates. <i>Physica B: Condensed Matter</i>. 2000;284-288:1728-1729. doi:<a href=\"https://doi.org/10.1016/s0921-4526(99)02892-6\">10.1016/s0921-4526(99)02892-6</a>","mla":"Heidtkamp, C., et al. “Tunable Backscattering in Quantum Hall Systems Induced by Neighbouring Gates.” <i>Physica B: Condensed Matter</i>, vol. 284–288, Elsevier BV, 2000, pp. 1728–29, doi:<a href=\"https://doi.org/10.1016/s0921-4526(99)02892-6\">10.1016/s0921-4526(99)02892-6</a>.","chicago":"Heidtkamp, C., Cedrik Meier, D. Reuter, M. Versen, S. Hoch, D. Diaconescu, and A.D. Wieck. “Tunable Backscattering in Quantum Hall Systems Induced by Neighbouring Gates.” <i>Physica B: Condensed Matter</i> 284–288 (2000): 1728–29. <a href=\"https://doi.org/10.1016/s0921-4526(99)02892-6\">https://doi.org/10.1016/s0921-4526(99)02892-6</a>.","short":"C. Heidtkamp, C. Meier, D. Reuter, M. Versen, S. Hoch, D. Diaconescu, A.D. Wieck, Physica B: Condensed Matter 284–288 (2000) 1728–1729.","ieee":"C. Heidtkamp <i>et al.</i>, “Tunable backscattering in quantum Hall systems induced by neighbouring gates,” <i>Physica B: Condensed Matter</i>, vol. 284–288, pp. 1728–1729, 2000.","apa":"Heidtkamp, C., Meier, C., Reuter, D., Versen, M., Hoch, S., Diaconescu, D., &#38; Wieck, A. D. (2000). Tunable backscattering in quantum Hall systems induced by neighbouring gates. <i>Physica B: Condensed Matter</i>, <i>284</i>–<i>288</i>, 1728–1729. <a href=\"https://doi.org/10.1016/s0921-4526(99)02892-6\">https://doi.org/10.1016/s0921-4526(99)02892-6</a>"},"publication":"Physica B: Condensed Matter","department":[{"_id":"15"}],"type":"journal_article","date_created":"2019-02-13T14:55:39Z","date_updated":"2022-01-06T07:03:44Z","publication_status":"published","publication_identifier":{"issn":["0921-4526"]},"author":[{"first_name":"C.","last_name":"Heidtkamp","full_name":"Heidtkamp, C."},{"id":"20798","full_name":"Meier, Cedrik","first_name":"Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572"},{"full_name":"Reuter, D.","first_name":"D.","last_name":"Reuter"},{"full_name":"Versen, M.","last_name":"Versen","first_name":"M."},{"full_name":"Hoch, S.","first_name":"S.","last_name":"Hoch"},{"first_name":"D.","last_name":"Diaconescu","full_name":"Diaconescu, D."},{"full_name":"Wieck, A.D.","last_name":"Wieck","first_name":"A.D."}],"year":"2000","title":"Tunable backscattering in quantum Hall systems induced by neighbouring gates","status":"public","volume":"284-288","doi":"10.1016/s0921-4526(99)02892-6","user_id":"20798","publisher":"Elsevier BV","_id":"7690","language":[{"iso":"eng"}],"page":"1728-1729"},{"citation":{"ieee":"D. Diaconescu, S. Hoch, C. Heidtkamp, C. Meier, D. Reuter, and A. D. Wieck, “A new peak in the bend resistance of a four-terminal device written by FIB implantation,” <i>Physica B: Condensed Matter</i>, vol. 284–288, pp. 1906–1907, 2000.","mla":"Diaconescu, Dorina, et al. “A New Peak in the Bend Resistance of a Four-Terminal Device Written by FIB Implantation.” <i>Physica B: Condensed Matter</i>, vol. 284–288, Elsevier BV, 2000, pp. 1906–07, doi:<a href=\"https://doi.org/10.1016/s0921-4526(99)03002-1\">10.1016/s0921-4526(99)03002-1</a>.","apa":"Diaconescu, D., Hoch, S., Heidtkamp, C., Meier, C., Reuter, D., &#38; Wieck, A. D. (2000). A new peak in the bend resistance of a four-terminal device written by FIB implantation. <i>Physica B: Condensed Matter</i>, <i>284</i>–<i>288</i>, 1906–1907. <a href=\"https://doi.org/10.1016/s0921-4526(99)03002-1\">https://doi.org/10.1016/s0921-4526(99)03002-1</a>","bibtex":"@article{Diaconescu_Hoch_Heidtkamp_Meier_Reuter_Wieck_2000, title={A new peak in the bend resistance of a four-terminal device written by FIB implantation}, volume={284–288}, DOI={<a href=\"https://doi.org/10.1016/s0921-4526(99)03002-1\">10.1016/s0921-4526(99)03002-1</a>}, journal={Physica B: Condensed Matter}, publisher={Elsevier BV}, author={Diaconescu, Dorina and Hoch, Sascha and Heidtkamp, Christian and Meier, Cedrik and Reuter, Dirk and Wieck, Andreas D}, year={2000}, pages={1906–1907} }","short":"D. Diaconescu, S. Hoch, C. Heidtkamp, C. Meier, D. Reuter, A.D. Wieck, Physica B: Condensed Matter 284–288 (2000) 1906–1907.","ama":"Diaconescu D, Hoch S, Heidtkamp C, Meier C, Reuter D, Wieck AD. A new peak in the bend resistance of a four-terminal device written by FIB implantation. <i>Physica B: Condensed Matter</i>. 2000;284-288:1906-1907. doi:<a href=\"https://doi.org/10.1016/s0921-4526(99)03002-1\">10.1016/s0921-4526(99)03002-1</a>","chicago":"Diaconescu, Dorina, Sascha Hoch, Christian Heidtkamp, Cedrik Meier, Dirk Reuter, and Andreas D Wieck. “A New Peak in the Bend Resistance of a Four-Terminal Device Written by FIB Implantation.” <i>Physica B: Condensed Matter</i> 284–288 (2000): 1906–7. <a href=\"https://doi.org/10.1016/s0921-4526(99)03002-1\">https://doi.org/10.1016/s0921-4526(99)03002-1</a>."},"publication":"Physica B: Condensed Matter","extern":"1","date_created":"2019-02-13T14:56:34Z","department":[{"_id":"15"}],"type":"journal_article","publication_identifier":{"issn":["0921-4526"]},"author":[{"last_name":"Diaconescu","first_name":"Dorina","full_name":"Diaconescu, Dorina"},{"first_name":"Sascha","last_name":"Hoch","full_name":"Hoch, Sascha"},{"full_name":"Heidtkamp, Christian","first_name":"Christian","last_name":"Heidtkamp"},{"last_name":"Meier","first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","id":"20798"},{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"last_name":"Wieck","first_name":"Andreas D","full_name":"Wieck, Andreas D"}],"year":"2000","status":"public","title":"A new peak in the bend resistance of a four-terminal device written by FIB implantation","publication_status":"published","date_updated":"2022-01-06T07:03:44Z","_id":"7691","publisher":"Elsevier BV","language":[{"iso":"eng"}],"page":"1906-1907","volume":"284-288","user_id":"20798","doi":"10.1016/s0921-4526(99)03002-1"}]