[{"date_created":"2018-08-23T12:37:40Z","file":[{"creator":"hclaudia","date_created":"2018-08-23T12:39:27Z","date_updated":"2018-08-23T12:39:27Z","relation":"main_file","file_size":729276,"access_level":"closed","file_name":"Biomimetic approaches to create anti-reflection glass surfaces for solar cells using self-organizing techniques.pdf","content_type":"application/pdf","success":1,"file_id":"4096"}],"department":[{"_id":"15"},{"_id":"286"},{"_id":"230"}],"type":"journal_article","publication":"Materials Science and Engineering: B","issue":"9","abstract":[{"text":"Aiming to diminish the reflection losses of glass covered light harvesting devices, the optical reflectivity\r\nof nanostructured glass surfaces is studied theoretically and experimentally. The work is inspired by\r\nthe nanoscale roughness of insect eyes, which is tried to be replicated on a technical glass surface. To\r\nthis end, the reflectivity of glass surfaces with topographies represented by linear, parabolic and Fermishaped\r\nglass/air fill factor profiles is calculated for normal incidence. It is shown that using the latter ones,\r\nan almost complete suppression of reflections can be achieved. A simple, self-organization technique to\r\ncreate such Fermi-shaped filling factor profiles in glass experimentally is also presented.","lang":"eng"}],"language":[{"iso":"eng"}],"doi":"10.1016/j.mseb.2012.10.014","publication_identifier":{"issn":["0921-5107"]},"author":[{"first_name":"J.","last_name":"Achtelik","full_name":"Achtelik, J."},{"full_name":"Sievers, W.","first_name":"W.","last_name":"Sievers"},{"last_name":"Lindner","first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797"}],"year":"2012","title":"Biomimetic approaches to create anti-reflection glass surfaces for solar cells using self-organizing techniques","intvolume":"       178","article_type":"original","date_updated":"2022-01-06T07:00:16Z","publication_status":"published","citation":{"chicago":"Achtelik, J., W. Sievers, and Jörg Lindner. “Biomimetic Approaches to Create Anti-Reflection Glass Surfaces for Solar Cells Using Self-Organizing Techniques.” <i>Materials Science and Engineering: B</i> 178, no. 9 (2012): 635–38. <a href=\"https://doi.org/10.1016/j.mseb.2012.10.014\">https://doi.org/10.1016/j.mseb.2012.10.014</a>.","short":"J. Achtelik, W. Sievers, J. Lindner, Materials Science and Engineering: B 178 (2012) 635–638.","ieee":"J. Achtelik, W. Sievers, and J. Lindner, “Biomimetic approaches to create anti-reflection glass surfaces for solar cells using self-organizing techniques,” <i>Materials Science and Engineering: B</i>, vol. 178, no. 9, pp. 635–638, 2012.","apa":"Achtelik, J., Sievers, W., &#38; Lindner, J. (2012). Biomimetic approaches to create anti-reflection glass surfaces for solar cells using self-organizing techniques. <i>Materials Science and Engineering: B</i>, <i>178</i>(9), 635–638. <a href=\"https://doi.org/10.1016/j.mseb.2012.10.014\">https://doi.org/10.1016/j.mseb.2012.10.014</a>","bibtex":"@article{Achtelik_Sievers_Lindner_2012, title={Biomimetic approaches to create anti-reflection glass surfaces for solar cells using self-organizing techniques}, volume={178}, DOI={<a href=\"https://doi.org/10.1016/j.mseb.2012.10.014\">10.1016/j.mseb.2012.10.014</a>}, number={9}, journal={Materials Science and Engineering: B}, publisher={Elsevier BV}, author={Achtelik, J. and Sievers, W. and Lindner, Jörg}, year={2012}, pages={635–638} }","ama":"Achtelik J, Sievers W, Lindner J. Biomimetic approaches to create anti-reflection glass surfaces for solar cells using self-organizing techniques. <i>Materials Science and Engineering: B</i>. 2012;178(9):635-638. doi:<a href=\"https://doi.org/10.1016/j.mseb.2012.10.014\">10.1016/j.mseb.2012.10.014</a>","mla":"Achtelik, J., et al. “Biomimetic Approaches to Create Anti-Reflection Glass Surfaces for Solar Cells Using Self-Organizing Techniques.” <i>Materials Science and Engineering: B</i>, vol. 178, no. 9, Elsevier BV, 2012, pp. 635–38, doi:<a href=\"https://doi.org/10.1016/j.mseb.2012.10.014\">10.1016/j.mseb.2012.10.014</a>."},"file_date_updated":"2018-08-23T12:39:27Z","_id":"4095","publisher":"Elsevier BV","page":"635-638","volume":178,"ddc":["530"],"user_id":"55706","conference":{"name":"European Materials Research Society Spring Meeting 2012","start_date":"2012-05-14","location":"Straßburg (France)","end_date":"2012-05-18"},"status":"public","has_accepted_license":"1"},{"file_date_updated":"2018-08-28T13:18:34Z","citation":{"short":"F. Zirkelbach, J. Lindner, K. Nordlund, B. Stritzker, Materials Science and Engineering: B 159–160 (2008) 149–152.","chicago":"Zirkelbach, F., Jörg Lindner, K. Nordlund, and B. Stritzker. “Molecular Dynamics Simulation of Defect Formation and Precipitation in Heavily Carbon Doped Silicon.” <i>Materials Science and Engineering: B</i> 159–160 (2008): 149–52. <a href=\"https://doi.org/10.1016/j.mseb.2008.10.010\">https://doi.org/10.1016/j.mseb.2008.10.010</a>.","ieee":"F. Zirkelbach, J. Lindner, K. Nordlund, and B. Stritzker, “Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon,” <i>Materials Science and Engineering: B</i>, vol. 159–160, pp. 149–152, 2008.","apa":"Zirkelbach, F., Lindner, J., Nordlund, K., &#38; Stritzker, B. (2008). Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon. <i>Materials Science and Engineering: B</i>, <i>159</i>–<i>160</i>, 149–152. <a href=\"https://doi.org/10.1016/j.mseb.2008.10.010\">https://doi.org/10.1016/j.mseb.2008.10.010</a>","bibtex":"@article{Zirkelbach_Lindner_Nordlund_Stritzker_2008, title={Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon}, volume={159–160}, DOI={<a href=\"https://doi.org/10.1016/j.mseb.2008.10.010\">10.1016/j.mseb.2008.10.010</a>}, journal={Materials Science and Engineering: B}, publisher={Elsevier BV}, author={Zirkelbach, F. and Lindner, Jörg and Nordlund, K. and Stritzker, B.}, year={2008}, pages={149–152} }","ama":"Zirkelbach F, Lindner J, Nordlund K, Stritzker B. Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon. <i>Materials Science and Engineering: B</i>. 2008;159-160:149-152. doi:<a href=\"https://doi.org/10.1016/j.mseb.2008.10.010\">10.1016/j.mseb.2008.10.010</a>","mla":"Zirkelbach, F., et al. “Molecular Dynamics Simulation of Defect Formation and Precipitation in Heavily Carbon Doped Silicon.” <i>Materials Science and Engineering: B</i>, vol. 159–160, Elsevier BV, 2008, pp. 149–52, doi:<a href=\"https://doi.org/10.1016/j.mseb.2008.10.010\">10.1016/j.mseb.2008.10.010</a>."},"page":"149-152","_id":"4229","publisher":"Elsevier BV","user_id":"55706","ddc":["530"],"volume":"159-160","status":"public","has_accepted_license":"1","file":[{"success":1,"content_type":"application/pdf","file_id":"4230","date_updated":"2018-08-28T13:18:34Z","relation":"main_file","file_size":477318,"access_level":"closed","file_name":"Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon.pdf","date_created":"2018-08-28T13:18:34Z","creator":"hclaudia"}],"date_created":"2018-08-28T13:18:05Z","type":"journal_article","publication":"Materials Science and Engineering: B","extern":"1","abstract":[{"lang":"eng","text":"The precipitation process of silicon carbide in heavily carbon doped silicon is not yet fully understood.\r\nHigh resolution transmission electron microscopy observations suggest that in a first step carbon atoms\r\nform C Si dumbbells on regular Si lattice sites which agglomerate into large clusters. In a second step,\r\nwhen the cluster size reaches a radius of a fewnm, the high interfacial energy due to the SiC/Si lattice misfit\r\nof almost 20% is overcome and the precipitation occurs. By simulation, details of the precipitation process\r\ncan be obtained on the atomic level. A recently proposed parametrization of a Tersoff-like bond order\r\npotential is used to model the system appropriately. Preliminary results gained by molecular dynamics\r\nsimulations using this potential are presented."}],"language":[{"iso":"eng"}],"doi":"10.1016/j.mseb.2008.10.010","year":"2008","title":"Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon","author":[{"full_name":"Zirkelbach, F.","first_name":"F.","last_name":"Zirkelbach"},{"full_name":"Lindner, Jörg","first_name":"Jörg","last_name":"Lindner","id":"20797"},{"full_name":"Nordlund, K.","first_name":"K.","last_name":"Nordlund"},{"first_name":"B.","last_name":"Stritzker","full_name":"Stritzker, B."}],"publication_identifier":{"issn":["0921-5107"]},"publication_status":"published","date_updated":"2022-01-06T07:00:39Z","article_type":"original"},{"doi":"10.1016/s0921-5107(01)00871-6","user_id":"42514","page":"230-233","language":[{"iso":"eng"}],"_id":"8738","date_updated":"2022-01-06T07:04:00Z","publication_status":"published","title":"Growth of InAs quantum dots on focussed ion beam implanted GaAs(100)","status":"public","year":"2002","publication_identifier":{"issn":["0921-5107"]},"author":[{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"first_name":"P","last_name":"Schafmeister","full_name":"Schafmeister, P"},{"full_name":"Koch, J","first_name":"J","last_name":"Koch"},{"last_name":"Schmidt","first_name":"K","full_name":"Schmidt, K"},{"full_name":"Wieck, A.D","last_name":"Wieck","first_name":"A.D"}],"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-03-28T15:15:00Z","publication":"Materials Science and Engineering: B","citation":{"bibtex":"@article{Reuter_Schafmeister_Koch_Schmidt_Wieck_2002, title={Growth of InAs quantum dots on focussed ion beam implanted GaAs(100)}, DOI={<a href=\"https://doi.org/10.1016/s0921-5107(01)00871-6\">10.1016/s0921-5107(01)00871-6</a>}, journal={Materials Science and Engineering: B}, author={Reuter, Dirk and Schafmeister, P and Koch, J and Schmidt, K and Wieck, A.D}, year={2002}, pages={230–233} }","ama":"Reuter D, Schafmeister P, Koch J, Schmidt K, Wieck A. Growth of InAs quantum dots on focussed ion beam implanted GaAs(100). <i>Materials Science and Engineering: B</i>. 2002:230-233. doi:<a href=\"https://doi.org/10.1016/s0921-5107(01)00871-6\">10.1016/s0921-5107(01)00871-6</a>","mla":"Reuter, Dirk, et al. “Growth of InAs Quantum Dots on Focussed Ion Beam Implanted GaAs(100).” <i>Materials Science and Engineering: B</i>, 2002, pp. 230–33, doi:<a href=\"https://doi.org/10.1016/s0921-5107(01)00871-6\">10.1016/s0921-5107(01)00871-6</a>.","chicago":"Reuter, Dirk, P Schafmeister, J Koch, K Schmidt, and A.D Wieck. “Growth of InAs Quantum Dots on Focussed Ion Beam Implanted GaAs(100).” <i>Materials Science and Engineering: B</i>, 2002, 230–33. <a href=\"https://doi.org/10.1016/s0921-5107(01)00871-6\">https://doi.org/10.1016/s0921-5107(01)00871-6</a>.","short":"D. Reuter, P. Schafmeister, J. Koch, K. Schmidt, A.. Wieck, Materials Science and Engineering: B (2002) 230–233.","ieee":"D. Reuter, P. Schafmeister, J. Koch, K. Schmidt, and A. . Wieck, “Growth of InAs quantum dots on focussed ion beam implanted GaAs(100),” <i>Materials Science and Engineering: B</i>, pp. 230–233, 2002.","apa":"Reuter, D., Schafmeister, P., Koch, J., Schmidt, K., &#38; Wieck, A. . (2002). Growth of InAs quantum dots on focussed ion beam implanted GaAs(100). <i>Materials Science and Engineering: B</i>, 230–233. <a href=\"https://doi.org/10.1016/s0921-5107(01)00871-6\">https://doi.org/10.1016/s0921-5107(01)00871-6</a>"}},{"title":"Electronic structure of InAs self-assembled quantum dots","status":"public","year":"2002","author":[{"first_name":"K.H.","last_name":"Schmidt","full_name":"Schmidt, K.H."},{"full_name":"Bock, C.","last_name":"Bock","first_name":"C."},{"full_name":"Kunze, U.","last_name":"Kunze","first_name":"U."},{"full_name":"Khorenko, V.V.","last_name":"Khorenko","first_name":"V.V."},{"first_name":"S.","last_name":"Malzer","full_name":"Malzer, S."},{"last_name":"Döhler","first_name":"G.H.","full_name":"Döhler, G.H."},{"full_name":"Versen, M.","last_name":"Versen","first_name":"M."},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"full_name":"Wieck, A.D.","first_name":"A.D.","last_name":"Wieck"}],"publication_identifier":{"issn":["0921-5107"]},"date_updated":"2022-01-06T07:04:00Z","publication_status":"published","page":"238-242","language":[{"iso":"eng"}],"_id":"8741","doi":"10.1016/s0921-5107(01)00873-x","user_id":"42514","publication":"Materials Science and Engineering: B","citation":{"apa":"Schmidt, K. H., Bock, C., Kunze, U., Khorenko, V. V., Malzer, S., Döhler, G. H., … Wieck, A. D. (2002). Electronic structure of InAs self-assembled quantum dots. <i>Materials Science and Engineering: B</i>, 238–242. <a href=\"https://doi.org/10.1016/s0921-5107(01)00873-x\">https://doi.org/10.1016/s0921-5107(01)00873-x</a>","mla":"Schmidt, K. H., et al. “Electronic Structure of InAs Self-Assembled Quantum Dots.” <i>Materials Science and Engineering: B</i>, 2002, pp. 238–42, doi:<a href=\"https://doi.org/10.1016/s0921-5107(01)00873-x\">10.1016/s0921-5107(01)00873-x</a>.","ieee":"K. H. Schmidt <i>et al.</i>, “Electronic structure of InAs self-assembled quantum dots,” <i>Materials Science and Engineering: B</i>, pp. 238–242, 2002.","chicago":"Schmidt, K.H., C. Bock, U. Kunze, V.V. Khorenko, S. Malzer, G.H. Döhler, M. Versen, Dirk Reuter, and A.D. Wieck. “Electronic Structure of InAs Self-Assembled Quantum Dots.” <i>Materials Science and Engineering: B</i>, 2002, 238–42. <a href=\"https://doi.org/10.1016/s0921-5107(01)00873-x\">https://doi.org/10.1016/s0921-5107(01)00873-x</a>.","ama":"Schmidt KH, Bock C, Kunze U, et al. Electronic structure of InAs self-assembled quantum dots. <i>Materials Science and Engineering: B</i>. 2002:238-242. doi:<a href=\"https://doi.org/10.1016/s0921-5107(01)00873-x\">10.1016/s0921-5107(01)00873-x</a>","short":"K.H. Schmidt, C. Bock, U. Kunze, V.V. Khorenko, S. Malzer, G.H. Döhler, M. Versen, D. Reuter, A.D. Wieck, Materials Science and Engineering: B (2002) 238–242.","bibtex":"@article{Schmidt_Bock_Kunze_Khorenko_Malzer_Döhler_Versen_Reuter_Wieck_2002, title={Electronic structure of InAs self-assembled quantum dots}, DOI={<a href=\"https://doi.org/10.1016/s0921-5107(01)00873-x\">10.1016/s0921-5107(01)00873-x</a>}, journal={Materials Science and Engineering: B}, author={Schmidt, K.H. and Bock, C. and Kunze, U. and Khorenko, V.V. and Malzer, S. and Döhler, G.H. and Versen, M. and Reuter, Dirk and Wieck, A.D.}, year={2002}, pages={238–242} }"},"date_created":"2019-03-28T15:18:09Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}]},{"author":[{"last_name":"Scholze","first_name":"A.","full_name":"Scholze, A."},{"id":"468","full_name":"Schmidt, Wolf Gero","first_name":"Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076"},{"full_name":"Käckell, P.","first_name":"P.","last_name":"Käckell"},{"full_name":"Bechstedt, F.","last_name":"Bechstedt","first_name":"F."}],"publication_identifier":{"issn":["0921-5107"]},"status":"public","year":"1996","title":"Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure","intvolume":"        37","publication_status":"published","date_updated":"2025-12-16T07:27:59Z","_id":"13795","language":[{"iso":"eng"}],"page":"158-161","volume":37,"user_id":"16199","doi":"10.1016/0921-5107(95)01477-2","citation":{"ieee":"A. Scholze, W. G. Schmidt, P. Käckell, and F. Bechstedt, “Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure,” <i>Materials Science and Engineering: B</i>, vol. 37, no. 1–3, pp. 158–161, 1996, doi: <a href=\"https://doi.org/10.1016/0921-5107(95)01477-2\">10.1016/0921-5107(95)01477-2</a>.","mla":"Scholze, A., et al. “Diamond (111) and (100) Surface: Ab Initio Study of the Atomic and Electronic Structure.” <i>Materials Science and Engineering: B</i>, vol. 37, no. 1–3, 1996, pp. 158–61, doi:<a href=\"https://doi.org/10.1016/0921-5107(95)01477-2\">10.1016/0921-5107(95)01477-2</a>.","apa":"Scholze, A., Schmidt, W. G., Käckell, P., &#38; Bechstedt, F. (1996). Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure. <i>Materials Science and Engineering: B</i>, <i>37</i>(1–3), 158–161. <a href=\"https://doi.org/10.1016/0921-5107(95)01477-2\">https://doi.org/10.1016/0921-5107(95)01477-2</a>","bibtex":"@article{Scholze_Schmidt_Käckell_Bechstedt_1996, title={Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure}, volume={37}, DOI={<a href=\"https://doi.org/10.1016/0921-5107(95)01477-2\">10.1016/0921-5107(95)01477-2</a>}, number={1–3}, journal={Materials Science and Engineering: B}, author={Scholze, A. and Schmidt, Wolf Gero and Käckell, P. and Bechstedt, F.}, year={1996}, pages={158–161} }","chicago":"Scholze, A., Wolf Gero Schmidt, P. Käckell, and F. Bechstedt. “Diamond (111) and (100) Surface: Ab Initio Study of the Atomic and Electronic Structure.” <i>Materials Science and Engineering: B</i> 37, no. 1–3 (1996): 158–61. <a href=\"https://doi.org/10.1016/0921-5107(95)01477-2\">https://doi.org/10.1016/0921-5107(95)01477-2</a>.","ama":"Scholze A, Schmidt WG, Käckell P, Bechstedt F. Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure. <i>Materials Science and Engineering: B</i>. 1996;37(1-3):158-161. doi:<a href=\"https://doi.org/10.1016/0921-5107(95)01477-2\">10.1016/0921-5107(95)01477-2</a>","short":"A. Scholze, W.G. Schmidt, P. Käckell, F. Bechstedt, Materials Science and Engineering: B 37 (1996) 158–161."},"publication":"Materials Science and Engineering: B","issue":"1-3","date_created":"2019-10-10T16:16:58Z","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"type":"journal_article"}]