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Nienhaus, and Cedrik Meier. “Inductively Coupled Plasma Reactive Ion Etching of Bulk ZnO Single Crystal and Molecular Beam Epitaxy Grown ZnO Films.” <i>Journal of Vacuum Science &#38; Technology B: Microelectronics and Nanometer Structures</i> 27, no. 5 (2009). <a href=\"https://doi.org/10.1116/1.3186528\">https://doi.org/10.1116/1.3186528</a>.","ieee":"M. Mehta, M. Ruth, K. A. Piegdon, D. Krix, H. Nienhaus, and C. Meier, “Inductively coupled plasma reactive ion etching of bulk ZnO single crystal and molecular beam epitaxy grown ZnO films,” <i>Journal of Vacuum Science &#38; Technology B: Microelectronics and Nanometer Structures</i>, vol. 27, no. 5, 2009.","bibtex":"@article{Mehta_Ruth_Piegdon_Krix_Nienhaus_Meier_2009, title={Inductively coupled plasma reactive ion etching of bulk ZnO single crystal and molecular beam epitaxy grown ZnO films}, volume={27}, DOI={<a href=\"https://doi.org/10.1116/1.3186528\">10.1116/1.3186528</a>}, number={52097}, journal={Journal of Vacuum Science &#38; Technology B: Microelectronics and Nanometer Structures}, publisher={American Vacuum Society}, author={Mehta, M. and Ruth, M. and Piegdon, K. A. and Krix, D. and Nienhaus, H. and Meier, Cedrik}, year={2009} }","short":"M. Mehta, M. Ruth, K.A. Piegdon, D. Krix, H. Nienhaus, C. Meier, Journal of Vacuum Science &#38; Technology B: Microelectronics and Nanometer Structures 27 (2009).","mla":"Mehta, M., et al. “Inductively Coupled Plasma Reactive Ion Etching of Bulk ZnO Single Crystal and Molecular Beam Epitaxy Grown ZnO Films.” <i>Journal of Vacuum Science &#38; Technology B: Microelectronics and Nanometer Structures</i>, vol. 27, no. 5, 2097, American Vacuum Society, 2009, doi:<a href=\"https://doi.org/10.1116/1.3186528\">10.1116/1.3186528</a>.","apa":"Mehta, M., Ruth, M., Piegdon, K. A., Krix, D., Nienhaus, H., &#38; Meier, C. (2009). Inductively coupled plasma reactive ion etching of bulk ZnO single crystal and molecular beam epitaxy grown ZnO films. <i>Journal of Vacuum Science &#38; Technology B: Microelectronics and Nanometer Structures</i>, <i>27</i>(5). <a href=\"https://doi.org/10.1116/1.3186528\">https://doi.org/10.1116/1.3186528</a>"},"intvolume":"        27","publisher":"American Vacuum Society","date_updated":"2022-01-06T07:03:39Z","date_created":"2019-02-04T14:44:44Z","author":[{"first_name":"M.","full_name":"Mehta, M.","last_name":"Mehta"},{"first_name":"M.","full_name":"Ruth, M.","last_name":"Ruth"},{"first_name":"K. A.","last_name":"Piegdon","full_name":"Piegdon, K. 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K.","first_name":"M. K."},{"last_name":"Kruis","full_name":"Kruis, F. E.","first_name":"F. E."}],"volume":24,"date_updated":"2022-01-06T07:03:43Z","citation":{"bibtex":"@article{Nienhaus_Kravets_Koutouzov_Meier_Lorke_Wiggers_Kennedy_Kruis_2006, title={Quantum size effect of valence band plasmon energies in Si and SnO[sub x] nanoparticles}, volume={24}, DOI={<a href=\"https://doi.org/10.1116/1.2190658\">10.1116/1.2190658</a>}, number={31156}, journal={Journal of Vacuum Science &#38; Technology B: Microelectronics and Nanometer Structures}, publisher={American Vacuum Society}, author={Nienhaus, H. and Kravets, V. and Koutouzov, S. and Meier, Cedrik and Lorke, A. and Wiggers, H. and Kennedy, M. K. and Kruis, F. E.}, year={2006} }","mla":"Nienhaus, H., et al. “Quantum Size Effect of Valence Band Plasmon Energies in Si and SnO[Sub x] Nanoparticles.” <i>Journal of Vacuum Science &#38; Technology B: Microelectronics and Nanometer Structures</i>, vol. 24, no. 3, 1156, American Vacuum Society, 2006, doi:<a href=\"https://doi.org/10.1116/1.2190658\">10.1116/1.2190658</a>.","short":"H. Nienhaus, V. Kravets, S. Koutouzov, C. Meier, A. Lorke, H. Wiggers, M.K. Kennedy, F.E. Kruis, Journal of Vacuum Science &#38; Technology B: Microelectronics and Nanometer Structures 24 (2006).","apa":"Nienhaus, H., Kravets, V., Koutouzov, S., Meier, C., Lorke, A., Wiggers, H., … Kruis, F. E. (2006). Quantum size effect of valence band plasmon energies in Si and SnO[sub x] nanoparticles. <i>Journal of Vacuum Science &#38; Technology B: Microelectronics and Nanometer Structures</i>, <i>24</i>(3). <a href=\"https://doi.org/10.1116/1.2190658\">https://doi.org/10.1116/1.2190658</a>","ama":"Nienhaus H, Kravets V, Koutouzov S, et al. Quantum size effect of valence band plasmon energies in Si and SnO[sub x] nanoparticles. <i>Journal of Vacuum Science &#38; Technology B: Microelectronics and Nanometer Structures</i>. 2006;24(3). doi:<a href=\"https://doi.org/10.1116/1.2190658\">10.1116/1.2190658</a>","chicago":"Nienhaus, H., V. Kravets, S. Koutouzov, Cedrik Meier, A. Lorke, H. Wiggers, M. K. Kennedy, and F. E. Kruis. “Quantum Size Effect of Valence Band Plasmon Energies in Si and SnO[Sub x] Nanoparticles.” <i>Journal of Vacuum Science &#38; Technology B: Microelectronics and Nanometer Structures</i> 24, no. 3 (2006). <a href=\"https://doi.org/10.1116/1.2190658\">https://doi.org/10.1116/1.2190658</a>.","ieee":"H. Nienhaus <i>et al.</i>, “Quantum size effect of valence band plasmon energies in Si and SnO[sub x] nanoparticles,” <i>Journal of Vacuum Science &#38; Technology B: Microelectronics and Nanometer Structures</i>, vol. 24, no. 3, 2006."},"intvolume":"        24","publication_status":"published","publication_identifier":{"issn":["1071-1023"]},"extern":"1","article_number":"1156","user_id":"20798","department":[{"_id":"15"}],"_id":"7649","status":"public","type":"journal_article"},{"publication_identifier":{"issn":["1071-1023"]},"publication_status":"published","year":"2006","citation":{"ieee":"D. Reuter, C. Riedesel, and A. D. 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