@article{7975, author = {{Lei, W. and Notthoff, C. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{3}}, publisher = {{AIP Publishing}}, title = {{{Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy}}}, doi = {{10.1063/1.3293445}}, volume = {{96}}, year = {{2010}}, } @article{7980, author = {{Lei, W. and Notthoff, C. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{3}}, publisher = {{AIP Publishing}}, title = {{{Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy}}}, doi = {{10.1063/1.3293445}}, volume = {{96}}, year = {{2010}}, } @article{7982, author = {{Csontos, M. and Komijani, Y. and Shorubalko, I. and Ensslin, K. and Reuter, Dirk and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{2}}, publisher = {{AIP Publishing}}, title = {{{Nanostructures in p-GaAs with improved tunability}}}, doi = {{10.1063/1.3463465}}, volume = {{97}}, year = {{2010}}, } @article{7983, author = {{Wiemann, M. and Wieser, U. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{6}}, publisher = {{AIP Publishing}}, title = {{{Full-wave rectification based upon hot-electron thermopower}}}, doi = {{10.1063/1.3475922}}, volume = {{97}}, year = {{2010}}, } @article{7990, author = {{Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, A. and Meier, C.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{14}}, publisher = {{AIP Publishing}}, title = {{{An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}}}, doi = {{10.1063/1.3488812}}, volume = {{97}}, year = {{2010}}, } @article{4550, abstract = {{We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.}}, author = {{Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Meier, Cedrik}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{14}}, publisher = {{AIP Publishing}}, title = {{{An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}}}, doi = {{10.1063/1.3488812}}, volume = {{97}}, year = {{2010}}, } @article{4194, abstract = {{A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy. The device shows a clear field effect at positive bias voltages with V_th=0.6 V. The HFET output characteristics were calculated using ATLAS simulation program. The electron channel at the cubic AlGaN/GaN interface was detected by room temperature capacitance-voltage measurements.}}, author = {{Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{25}}, publisher = {{AIP Publishing}}, title = {{{Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)}}}, doi = {{10.1063/1.3455066}}, volume = {{96}}, year = {{2010}}, } @article{7973, author = {{Buchholz, S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{2}}, publisher = {{AIP Publishing}}, title = {{{Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring}}}, doi = {{10.1063/1.3069281}}, volume = {{94}}, year = {{2009}}, } @article{8579, author = {{Buchholz, S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring}}}, doi = {{10.1063/1.3069281}}, year = {{2009}}, } @article{8580, author = {{Blokland, J. H. and Bozkurt, M. and Ulloa, J. M. and Reuter, Dirk and Wieck, A. D. and Koenraad, P. M. and Christianen, P. C. M. and Maan, J. C.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy}}}, doi = {{10.1063/1.3072366}}, year = {{2009}}, } @article{8585, author = {{Marquardt, B. and Geller, M. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots}}}, doi = {{10.1063/1.3175724}}, year = {{2009}}, } @article{7640, author = {{Lei, W. and Offer, M. and Lorke, A. and Notthoff, C. and Meier, Cedrik and Wibbelhoff, O. and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{19}}, publisher = {{AIP Publishing}}, title = {{{Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy}}}, doi = {{10.1063/1.2920439}}, volume = {{92}}, year = {{2008}}, } @article{8603, author = {{Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Cordier, Y. and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures}}}, doi = {{10.1063/1.2899968}}, year = {{2008}}, } @article{8607, author = {{Hohage, P. E. and Nannen, J. and Halm, S. and Bacher, G. and Wahle, M. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature}}}, doi = {{10.1063/1.2943279}}, year = {{2008}}, } @article{8608, author = {{Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Keune, W. and Wende, H. and Petracic, O. and Westerholt, K.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Electrical detection of photoinduced spins both at room temperature and in remanence}}}, doi = {{10.1063/1.2948856}}, year = {{2008}}, } @article{8609, author = {{Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Wende, H. and Keune, W. and Petracic, O. and Westerholt, K.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Room temperature electrical spin injection in remanence}}}, doi = {{10.1063/1.2957469}}, year = {{2008}}, } @article{39749, author = {{Hoischen, A. and Benning, S. A. and Kitzerow, Heinz-Siegfried}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, keywords = {{Physics and Astronomy (miscellaneous)}}, number = {{13}}, publisher = {{AIP Publishing}}, title = {{{Submicrometer periodic patterns fixed by photopolymerization of dissipative structures}}}, doi = {{10.1063/1.2990762}}, volume = {{93}}, year = {{2008}}, } @article{39751, author = {{Redler, Andreas and Kitzerow, Heinz-Siegfried}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, keywords = {{Physics and Astronomy (miscellaneous)}}, number = {{18}}, publisher = {{AIP Publishing}}, title = {{{Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal}}}, doi = {{10.1063/1.3021364}}, volume = {{93}}, year = {{2008}}, } @article{26076, author = {{Han, Xiao-Feng and Weng, Yu-Xiang and Wang, Rui and Chen, Xi-Hao and Luo, Kai Hong and Wu, Ling-An and Zhao, Jimin}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Single-photon level ultrafast all-optical switching}}}, doi = {{10.1063/1.2909540}}, year = {{2008}}, } @article{1761, author = {{Rockstuhl, Carsten and Lederer, Falk and Zentgraf, Thomas and Giessen, Harald}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{15}}, publisher = {{AIP Publishing}}, title = {{{Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays}}}, doi = {{10.1063/1.2799240}}, volume = {{91}}, year = {{2007}}, } @article{7644, author = {{Meier, Cedrik and Hennessy, Kevin}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{14}}, publisher = {{AIP Publishing}}, title = {{{Technique for tilting GaAs photonic crystal nanocavities out of plane}}}, doi = {{10.1063/1.2719612}}, volume = {{90}}, year = {{2007}}, } @article{8630, author = {{Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Wieck, A. D. and Ney, V. and Kammermeier, T. and Ney, A. and Schörmann, J. and Potthast, S. and As, D. J. and Lischka, K.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Magnetic and structural properties of Gd-implanted zinc-blende GaN}}}, doi = {{10.1063/1.2753113}}, year = {{2007}}, } @article{8632, author = {{Mehta, M. and Reuter, Dirk and Melnikov, A. and Wieck, A. D. and Remhof, A.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Focused ion beam implantation induced site-selective growth of InAs quantum dots}}}, doi = {{10.1063/1.2786836}}, year = {{2007}}, } @article{25986, abstract = {{The authors report the synthesis of nanoporous ZnO, which exhibits a periodically ordered, uniform pore system with crystalline pore walls. The crystalline structure is investigated by x-ray diffraction, transmission electron microscopy, and selected area electron diffraction. The large specific surface area and the uniformity of the pore system are confirmed by nitrogen physisorption. Raman spectroscopy along with low-temperature photoluminescence measurements confirms the high degree of crystallinity and gives insight into defects participating in the radiative recombination processes. The authors thank Günter Koch for recording the TEM images and Marie-Luise Wolff for valuable help in the laboratory one of the authors (M.T.) thanks Michael Fröba for the continuous support.}}, author = {{Waitz, T. and Tiemann, Michael and Klar, P. J. and Sann, J. and Stehr, J. and Meyer, B. K.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Crystalline ZnO with an enhanced surface area obtained by nanocasting}}}, doi = {{10.1063/1.2713872}}, year = {{2007}}, } @article{39561, author = {{Scharnberg, M. and Zaporojtchenko, V. and Adelung, R. and Faupel, F. and Pannemann, C. and Diekmann, T. and Hilleringmann, Ulrich}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, keywords = {{Physics and Astronomy (miscellaneous)}}, number = {{1}}, publisher = {{AIP Publishing}}, title = {{{Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer}}}, doi = {{10.1063/1.2426926}}, volume = {{90}}, year = {{2007}}, } @article{7651, author = {{Meier, Cedrik and Hennessy, Kevin and Haberer, Elaine D. and Sharma, Rajat and Choi, Yong-Seok and McGroddy, Kelly and Keller, Stacia and DenBaars, Steven P. and Nakamura, Shuji and Hu, Evelyn L.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{3}}, publisher = {{AIP Publishing}}, title = {{{Visible resonant modes in GaN-based photonic crystal membrane cavities}}}, doi = {{10.1063/1.2166680}}, volume = {{88}}, year = {{2006}}, } @article{8648, author = {{Knop, M. and Wieser, U. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Ballistic rectification in an asymmetric mesoscopic cross junction}}}, doi = {{10.1063/1.2179618}}, year = {{2006}}, } @article{8654, author = {{Schmidt, R. and Scholz, U. and Vitzethum, M. and Fix, R. and Metzner, C. and Kailuweit, P. and Reuter, Dirk and Wieck, A. and Hübner, M. C. and Stufler, S. and Zrenner, A. and Malzer, S. and Döhler, G. H.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Fabrication of genuine single-quantum-dot light-emitting diodes}}}, doi = {{10.1063/1.2188057}}, year = {{2006}}, } @article{8665, author = {{Stavarache, V. and Reuter, Dirk and Wieck, A. D. and Schwab, M. and Yakovlev, D. R. and Oulton, R. and Bayer, M.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Control of quantum dot excitons by lateral electric fields}}}, doi = {{10.1063/1.2345233}}, year = {{2006}}, } @article{8671, author = {{Hohage, P. E. and Bacher, G. and Reuter, Dirk and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Coherent spin oscillations in bulk GaAs at room temperature}}}, doi = {{10.1063/1.2398909}}, year = {{2006}}, } @article{29684, author = {{Thomas, Andy and Meyners, Dirk and Ebke, Daniel and Liu, Ning-Ning and Sacher, Marc and Schmalhorst, Jan and Reiss, Günter and Ebert, Hubert and Hütten, Andreas}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, keywords = {{Physics and Astronomy (miscellaneous)}}, number = {{1}}, publisher = {{AIP Publishing}}, title = {{{Inverted spin polarization of Heusler alloys for spintronic devices}}}, doi = {{10.1063/1.2219333}}, volume = {{89}}, year = {{2006}}, } @article{7653, author = {{Choi, Y.-S. and Hennessy, K. and Sharma, R. and Haberer, E. and Gao, Y. and DenBaars, S. P. and Nakamura, S. and Hu, E. L. and Meier, Cedrik}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{24}}, publisher = {{AIP Publishing}}, title = {{{GaN blue photonic crystal membrane nanocavities}}}, doi = {{10.1063/1.2147713}}, volume = {{87}}, year = {{2005}}, } @article{7654, author = {{Lüttjohann, Stephan and Meier, Cedrik and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{16}}, publisher = {{AIP Publishing}}, title = {{{Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra}}}, doi = {{10.1063/1.2112192}}, volume = {{87}}, year = {{2005}}, } @article{7655, author = {{David, A. and Meier, Cedrik and Sharma, R. and Diana, F. S. and DenBaars, S. P. and Hu, E. and Nakamura, S. and Weisbuch, C. and Benisty, H.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{10}}, publisher = {{AIP Publishing}}, title = {{{Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction}}}, doi = {{10.1063/1.2039987}}, volume = {{87}}, year = {{2005}}, } @article{7656, author = {{Sharma, R. and Haberer, E. D. and Meier, Cedrik and Hu, E. L. and Nakamura, S.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{5}}, publisher = {{AIP Publishing}}, title = {{{Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching}}}, doi = {{10.1063/1.2008380}}, volume = {{87}}, year = {{2005}}, } @article{7659, author = {{Chakraborty, Arpan and Keller, Stacia and Meier, Cedrik and Haskell, Benjamin A. and Keller, Salka and Waltereit, Patrick and DenBaars, Steven P. and Nakamura, Shuji and Speck, James S. and Mishra, Umesh K.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{3}}, publisher = {{AIP Publishing}}, title = {{{Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN}}}, doi = {{10.1063/1.1851007}}, volume = {{86}}, year = {{2005}}, } @article{8679, author = {{Reuter, Dirk and Werner, C. and Wieck, A. D. and Petrosyan, S.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Depletion characteristics of two-dimensional lateral p‐n-junctions}}}, doi = {{10.1063/1.1897829}}, year = {{2005}}, } @article{8683, author = {{Müller, T. and Würtz, A. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Wave-form sampling using a driven electron ratchet in a two-dimensional electron system}}}, doi = {{10.1063/1.2001740}}, year = {{2005}}, } @article{8685, author = {{Gerhardt, N. C. and Hövel, S. and Brenner, C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Keune, W. and Westerholt, K.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Electron spin injection into GaAs from ferromagnetic contacts in remanence}}}, doi = {{10.1063/1.1996843}}, year = {{2005}}, } @article{8690, author = {{Lüttjohann, Stephan and Meier, Cedrik and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra}}}, doi = {{10.1063/1.2112192}}, year = {{2005}}, } @article{8691, author = {{Grbić, Boris and Leturcq, Renaud and Ensslin, Klaus and Reuter, Dirk and Wieck, Andreas D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, title = {{{Single-hole transistor in p-type GaAs∕AlGaAs heterostructures}}}, doi = {{10.1063/1.2139994}}, year = {{2005}}, } @article{29691, author = {{Höink, V. and Sacher, Marc and Schmalhorst, J. and Reiss, G. and Engel, D. and Junk, D. and Ehresmann, A.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, keywords = {{Physics and Astronomy (miscellaneous)}}, number = {{15}}, publisher = {{AIP Publishing}}, title = {{{Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias}}}, doi = {{10.1063/1.1899771}}, volume = {{86}}, year = {{2005}}, } @article{39764, author = {{Matthias, Heinrich and Röder, Thorsten and Wehrspohn, Ralf B. and Kitzerow, Heinz-Siegfried and Matthias, Sven and Picken, Stephen J.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, keywords = {{Physics and Astronomy (miscellaneous)}}, number = {{24}}, publisher = {{AIP Publishing}}, title = {{{Spatially periodic liquid crystal director field appearing in a photonic crystal template}}}, doi = {{10.1063/1.2142100}}, volume = {{87}}, year = {{2005}}, } @article{39767, author = {{Mertens, G. and Wehrspohn, R. B. and Kitzerow, Heinz-Siegfried and Matthias, S. and Jamois, C. and Gösele, U.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, keywords = {{Physics and Astronomy (miscellaneous)}}, number = {{24}}, publisher = {{AIP Publishing}}, title = {{{Tunable defect mode in a three-dimensional photonic crystal}}}, doi = {{10.1063/1.2139846}}, volume = {{87}}, year = {{2005}}, } @article{39768, author = {{Paelke, Lutz and Kitzerow, Heinz-Siegfried and Strohriegl, Peter}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, keywords = {{Physics and Astronomy (miscellaneous)}}, number = {{3}}, publisher = {{AIP Publishing}}, title = {{{Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane}}}, doi = {{10.1063/1.1852082}}, volume = {{86}}, year = {{2005}}, } @article{23507, abstract = {{A microscopic model is used to analyze gain and loss properties of (GaIn)(NAs)∕GaAs quantum wells in the 1.3–1.55μm range, including Auger and radiative recombination. The calculations show that, as long as good material quality can be achieved, growing highly compressively strained samples is preferable due to their specific band structure properties. Optimum laser operation is possible slightly above a peak gain of 1000cm−1 ⁠.}}, author = {{Schlichenmaier, C. and Thränhardt, A. and Meier, Torsten and Koch, S. W. and Chow, W. W. and Hader, J. and Moloney, J. V.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{26}}, title = {{{Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range}}}, doi = {{10.1063/1.2149371}}, volume = {{87}}, year = {{2005}}, } @article{39574, author = {{Scharnberg, M. and Hu, J. and Kanzow, J. and Rätzke, K. and Adelung, R. and Faupel, F. and Pannemann, C. and Hilleringmann, Ulrich and Meyer, S. and Pflaum, J.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, keywords = {{Physics and Astronomy (miscellaneous)}}, number = {{2}}, publisher = {{AIP Publishing}}, title = {{{Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics}}}, doi = {{10.1063/1.1849845}}, volume = {{86}}, year = {{2005}}, } @article{7678, author = {{Haberer, E. D. and Sharma, R. and Meier, Cedrik and Stonas, A. R. and Nakamura, S. and DenBaars, S. P. and Hu, E. L.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, number = {{22}}, pages = {{5179--5181}}, publisher = {{AIP Publishing}}, title = {{{Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching}}}, doi = {{10.1063/1.1829167}}, volume = {{85}}, year = {{2004}}, } @article{8696, author = {{Petrosyan, S. and Yesayan, A. and Reuter, Dirk and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, pages = {{3313--3315}}, title = {{{The linearly graded two-dimensional p–n junction}}}, doi = {{10.1063/1.1736316}}, year = {{2004}}, } @article{8711, author = {{Grbić, B. and Ellenberger, C. and Ihn, T. and Ensslin, K. and Reuter, Dirk and Wieck, A. D.}}, issn = {{0003-6951}}, journal = {{Applied Physics Letters}}, pages = {{2277--2279}}, title = {{{Magnetotransport in C-doped AlGaAs heterostructures}}}, doi = {{10.1063/1.1781750}}, year = {{2004}}, }