[{"doi":"10.1063/1.2719612","date_updated":"2022-01-06T07:03:43Z","language":[{"iso":"eng"}],"title":"Technique for tilting GaAs photonic crystal nanocavities out of plane","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"department":[{"_id":"15"}],"article_number":"143113","issue":"14","intvolume":" 90","_id":"7644","year":"2007","type":"journal_article","citation":{"chicago":"Meier, Cedrik, and Kevin Hennessy. “Technique for Tilting GaAs Photonic Crystal Nanocavities out of Plane.” Applied Physics Letters 90, no. 14 (2007). https://doi.org/10.1063/1.2719612.","apa":"Meier, C., & Hennessy, K. (2007). Technique for tilting GaAs photonic crystal nanocavities out of plane. Applied Physics Letters, 90(14). https://doi.org/10.1063/1.2719612","ama":"Meier C, Hennessy K. Technique for tilting GaAs photonic crystal nanocavities out of plane. 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Hennessy, “Technique for tilting GaAs photonic crystal nanocavities out of plane,” Applied Physics Letters, vol. 90, no. 14, 2007."},"user_id":"20798","extern":"1","volume":90,"status":"public","date_created":"2019-02-13T11:34:33Z","author":[{"orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","first_name":"Cedrik","id":"20798","last_name":"Meier"},{"last_name":"Hennessy","full_name":"Hennessy, Kevin","first_name":"Kevin"}],"publisher":"AIP Publishing","publication":"Applied Physics Letters"},{"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","status":"public","date_created":"2019-03-26T10:23:42Z","author":[{"first_name":"F.-Y.","full_name":"Lo, F.-Y.","last_name":"Lo"},{"last_name":"Melnikov","full_name":"Melnikov, A.","first_name":"A."},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"},{"last_name":"Ney","full_name":"Ney, V.","first_name":"V."},{"last_name":"Kammermeier","first_name":"T.","full_name":"Kammermeier, T."},{"full_name":"Ney, A.","first_name":"A.","last_name":"Ney"},{"last_name":"Schörmann","full_name":"Schörmann, J.","first_name":"J."},{"first_name":"S.","full_name":"Potthast, S.","last_name":"Potthast"},{"full_name":"As, D. J.","first_name":"D. J.","last_name":"As"},{"last_name":"Lischka","first_name":"K.","full_name":"Lischka, K."}],"publication":"Applied Physics Letters","department":[{"_id":"15"},{"_id":"230"}],"title":"Magnetic and structural properties of Gd-implanted zinc-blende GaN","user_id":"42514","citation":{"ama":"Lo F-Y, Melnikov A, Reuter D, et al. Magnetic and structural properties of Gd-implanted zinc-blende GaN. Applied Physics Letters. 2007. doi:10.1063/1.2753113","apa":"Lo, F.-Y., Melnikov, A., Reuter, D., Wieck, A. D., Ney, V., Kammermeier, T., … Lischka, K. (2007). Magnetic and structural properties of Gd-implanted zinc-blende GaN. Applied Physics Letters. https://doi.org/10.1063/1.2753113","chicago":"Lo, F.-Y., A. Melnikov, Dirk Reuter, A. D. Wieck, V. Ney, T. Kammermeier, A. Ney, et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende GaN.” Applied Physics Letters, 2007. https://doi.org/10.1063/1.2753113.","bibtex":"@article{Lo_Melnikov_Reuter_Wieck_Ney_Kammermeier_Ney_Schörmann_Potthast_As_et al._2007, title={Magnetic and structural properties of Gd-implanted zinc-blende GaN}, DOI={10.1063/1.2753113}, number={262505}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Wieck, A. D. and Ney, V. and Kammermeier, T. and Ney, A. and Schörmann, J. and Potthast, S. and As, D. J. and et al.}, year={2007} }","mla":"Lo, F. Y., et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende GaN.” Applied Physics Letters, 262505, 2007, doi:10.1063/1.2753113.","short":"F.-Y. Lo, A. Melnikov, D. Reuter, A.D. Wieck, V. Ney, T. Kammermeier, A. Ney, J. Schörmann, S. Potthast, D.J. As, K. Lischka, Applied Physics Letters (2007).","ieee":"F.-Y. Lo et al., “Magnetic and structural properties of Gd-implanted zinc-blende GaN,” Applied Physics Letters, 2007."},"year":"2007","type":"journal_article","language":[{"iso":"eng"}],"article_number":"262505","doi":"10.1063/1.2753113","date_updated":"2022-01-06T07:03:57Z","_id":"8630"},{"author":[{"full_name":"Mehta, M.","first_name":"M.","last_name":"Mehta"},{"last_name":"Reuter","id":"37763","first_name":"Dirk","full_name":"Reuter, Dirk"},{"full_name":"Melnikov, A.","first_name":"A.","last_name":"Melnikov"},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"},{"last_name":"Remhof","first_name":"A.","full_name":"Remhof, A."}],"publication":"Applied Physics Letters","department":[{"_id":"15"},{"_id":"230"}],"status":"public","date_created":"2019-03-26T10:26:08Z","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"user_id":"42514","title":"Focused ion beam implantation induced site-selective growth of InAs quantum dots","language":[{"iso":"eng"}],"year":"2007","type":"journal_article","citation":{"ieee":"M. Mehta, D. Reuter, A. Melnikov, A. D. Wieck, and A. Remhof, “Focused ion beam implantation induced site-selective growth of InAs quantum dots,” Applied Physics Letters, 2007.","short":"M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, A. Remhof, Applied Physics Letters (2007).","bibtex":"@article{Mehta_Reuter_Melnikov_Wieck_Remhof_2007, title={Focused ion beam implantation induced site-selective growth of InAs quantum dots}, DOI={10.1063/1.2786836}, number={123108}, journal={Applied Physics Letters}, author={Mehta, M. and Reuter, Dirk and Melnikov, A. and Wieck, A. D. and Remhof, A.}, year={2007} }","mla":"Mehta, M., et al. “Focused Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” Applied Physics Letters, 123108, 2007, doi:10.1063/1.2786836.","apa":"Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., & Remhof, A. (2007). Focused ion beam implantation induced site-selective growth of InAs quantum dots. Applied Physics Letters. https://doi.org/10.1063/1.2786836","ama":"Mehta M, Reuter D, Melnikov A, Wieck AD, Remhof A. Focused ion beam implantation induced site-selective growth of InAs quantum dots. Applied Physics Letters. 2007. doi:10.1063/1.2786836","chicago":"Mehta, M., Dirk Reuter, A. Melnikov, A. D. Wieck, and A. Remhof. “Focused Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” Applied Physics Letters, 2007. https://doi.org/10.1063/1.2786836."},"_id":"8632","date_updated":"2022-01-06T07:03:57Z","article_number":"123108","doi":"10.1063/1.2786836"},{"title":"Crystalline ZnO with an enhanced surface area obtained by nanocasting","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"department":[{"_id":"35"},{"_id":"2"},{"_id":"307"}],"doi":"10.1063/1.2713872","date_updated":"2023-03-09T08:49:01Z","language":[{"iso":"eng"}],"user_id":"23547","extern":"1","article_type":"original","abstract":[{"lang":"eng","text":"The authors report the synthesis of nanoporous ZnO, which exhibits a periodically ordered, uniform pore system with crystalline pore walls. The crystalline structure is investigated by x-ray diffraction, transmission electron microscopy, and selected area electron diffraction. The large specific surface area and the uniformity of the pore system are confirmed by nitrogen physisorption. Raman spectroscopy along with low-temperature photoluminescence measurements confirms the high degree of crystallinity and gives insight into defects participating in the radiative recombination processes.\r\nThe authors thank Günter Koch for recording the TEM images and Marie-Luise Wolff for valuable help in the laboratory one of the authors (M.T.) thanks Michael Fröba for the continuous support."}],"status":"public","date_created":"2021-10-09T09:40:39Z","quality_controlled":"1","author":[{"last_name":"Waitz","first_name":"T.","full_name":"Waitz, T."},{"last_name":"Tiemann","id":"23547","first_name":"Michael","orcid":"0000-0003-1711-2722","full_name":"Tiemann, Michael"},{"last_name":"Klar","first_name":"P. J.","full_name":"Klar, P. J."},{"first_name":"J.","full_name":"Sann, J.","last_name":"Sann"},{"full_name":"Stehr, J.","first_name":"J.","last_name":"Stehr"},{"last_name":"Meyer","full_name":"Meyer, B. K.","first_name":"B. K."}],"publication":"Applied Physics Letters","article_number":"123108","_id":"25986","citation":{"mla":"Waitz, T., et al. “Crystalline ZnO with an Enhanced Surface Area Obtained by Nanocasting.” Applied Physics Letters, 123108, 2007, doi:10.1063/1.2713872.","bibtex":"@article{Waitz_Tiemann_Klar_Sann_Stehr_Meyer_2007, title={Crystalline ZnO with an enhanced surface area obtained by nanocasting}, DOI={10.1063/1.2713872}, number={123108}, journal={Applied Physics Letters}, author={Waitz, T. and Tiemann, Michael and Klar, P. J. and Sann, J. and Stehr, J. and Meyer, B. K.}, year={2007} }","apa":"Waitz, T., Tiemann, M., Klar, P. J., Sann, J., Stehr, J., & Meyer, B. K. (2007). Crystalline ZnO with an enhanced surface area obtained by nanocasting. 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Meyer, Applied Physics Letters (2007)."},"year":"2007","type":"journal_article"},{"publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"department":[{"_id":"59"}],"title":"Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer","language":[{"iso":"eng"}],"doi":"10.1063/1.2426926","date_updated":"2023-03-21T10:15:06Z","volume":90,"date_created":"2023-01-24T12:15:22Z","status":"public","publication":"Applied Physics Letters","keyword":["Physics and Astronomy (miscellaneous)"],"publisher":"AIP Publishing","author":[{"last_name":"Scharnberg","first_name":"M.","full_name":"Scharnberg, M."},{"last_name":"Zaporojtchenko","first_name":"V.","full_name":"Zaporojtchenko, V."},{"first_name":"R.","full_name":"Adelung, R.","last_name":"Adelung"},{"full_name":"Faupel, F.","first_name":"F.","last_name":"Faupel"},{"last_name":"Pannemann","full_name":"Pannemann, C.","first_name":"C."},{"first_name":"T.","full_name":"Diekmann, T.","last_name":"Diekmann"},{"id":"20179","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich"}],"user_id":"20179","type":"journal_article","citation":{"short":"M. Scharnberg, V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T. Diekmann, U. Hilleringmann, Applied Physics Letters 90 (2007).","ieee":"M. Scharnberg et al., “Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer,” Applied Physics Letters, vol. 90, no. 1, Art. no. 013501, 2007, doi: 10.1063/1.2426926.","chicago":"Scharnberg, M., V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T. Diekmann, and Ulrich Hilleringmann. “Tuning the Threshold Voltage of Organic Field-Effect Transistors by an Electret Encapsulating Layer.” Applied Physics Letters 90, no. 1 (2007). https://doi.org/10.1063/1.2426926.","ama":"Scharnberg M, Zaporojtchenko V, Adelung R, et al. Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. Applied Physics Letters. 2007;90(1). doi:10.1063/1.2426926","apa":"Scharnberg, M., Zaporojtchenko, V., Adelung, R., Faupel, F., Pannemann, C., Diekmann, T., & Hilleringmann, U. (2007). Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. Applied Physics Letters, 90(1), Article 013501. https://doi.org/10.1063/1.2426926","mla":"Scharnberg, M., et al. “Tuning the Threshold Voltage of Organic Field-Effect Transistors by an Electret Encapsulating Layer.” Applied Physics Letters, vol. 90, no. 1, 013501, AIP Publishing, 2007, doi:10.1063/1.2426926.","bibtex":"@article{Scharnberg_Zaporojtchenko_Adelung_Faupel_Pannemann_Diekmann_Hilleringmann_2007, title={Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer}, volume={90}, DOI={10.1063/1.2426926}, number={1013501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Scharnberg, M. and Zaporojtchenko, V. and Adelung, R. and Faupel, F. and Pannemann, C. and Diekmann, T. and Hilleringmann, Ulrich}, year={2007} }"},"year":"2007","article_number":"013501","issue":"1","intvolume":" 90","_id":"39561"},{"language":[{"iso":"eng"}],"doi":"10.1063/1.2166680","date_updated":"2022-01-06T07:03:43Z","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"department":[{"_id":"15"}],"title":"Visible resonant modes in GaN-based photonic crystal membrane cavities","year":"2006","type":"journal_article","citation":{"ieee":"C. Meier et al., “Visible resonant modes in GaN-based photonic crystal membrane cavities,” Applied Physics Letters, vol. 88, no. 3, 2006.","short":"C. Meier, K. Hennessy, E.D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy, S. Keller, S.P. DenBaars, S. Nakamura, E.L. Hu, Applied Physics Letters 88 (2006).","bibtex":"@article{Meier_Hennessy_Haberer_Sharma_Choi_McGroddy_Keller_DenBaars_Nakamura_Hu_2006, title={Visible resonant modes in GaN-based photonic crystal membrane cavities}, volume={88}, DOI={10.1063/1.2166680}, number={3031111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Meier, Cedrik and Hennessy, Kevin and Haberer, Elaine D. and Sharma, Rajat and Choi, Yong-Seok and McGroddy, Kelly and Keller, Stacia and DenBaars, Steven P. and Nakamura, Shuji and Hu, Evelyn L.}, year={2006} }","mla":"Meier, Cedrik, et al. “Visible Resonant Modes in GaN-Based Photonic Crystal Membrane Cavities.” Applied Physics Letters, vol. 88, no. 3, 031111, AIP Publishing, 2006, doi:10.1063/1.2166680.","chicago":"Meier, Cedrik, Kevin Hennessy, Elaine D. Haberer, Rajat Sharma, Yong-Seok Choi, Kelly McGroddy, Stacia Keller, Steven P. DenBaars, Shuji Nakamura, and Evelyn L. 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Applied Physics Letters, 88(3). https://doi.org/10.1063/1.2166680"},"article_number":"031111","issue":"3","intvolume":" 88","_id":"7651","volume":88,"status":"public","date_created":"2019-02-13T11:41:17Z","publisher":"AIP Publishing","author":[{"first_name":"Cedrik","full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","id":"20798"},{"first_name":"Kevin","full_name":"Hennessy, Kevin","last_name":"Hennessy"},{"first_name":"Elaine D.","full_name":"Haberer, Elaine D.","last_name":"Haberer"},{"last_name":"Sharma","first_name":"Rajat","full_name":"Sharma, Rajat"},{"last_name":"Choi","full_name":"Choi, Yong-Seok","first_name":"Yong-Seok"},{"last_name":"McGroddy","first_name":"Kelly","full_name":"McGroddy, Kelly"},{"first_name":"Stacia","full_name":"Keller, Stacia","last_name":"Keller"},{"full_name":"DenBaars, Steven P.","first_name":"Steven P.","last_name":"DenBaars"},{"full_name":"Nakamura, Shuji","first_name":"Shuji","last_name":"Nakamura"},{"first_name":"Evelyn L.","full_name":"Hu, Evelyn L.","last_name":"Hu"}],"publication":"Applied Physics Letters","user_id":"20798","extern":"1"},{"citation":{"chicago":"Knop, M., U. 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C. and Stufler, S. and et al.}, year={2006} }","mla":"Schmidt, R., et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting Diodes.” Applied Physics Letters, 121115, 2006, doi:10.1063/1.2188057.","chicago":"Schmidt, R., U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, Dirk Reuter, et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting Diodes.” Applied Physics Letters, 2006. https://doi.org/10.1063/1.2188057.","apa":"Schmidt, R., Scholz, U., Vitzethum, M., Fix, R., Metzner, C., Kailuweit, P., … Döhler, G. H. (2006). Fabrication of genuine single-quantum-dot light-emitting diodes. Applied Physics Letters. https://doi.org/10.1063/1.2188057","ama":"Schmidt R, Scholz U, Vitzethum M, et al. Fabrication of genuine single-quantum-dot light-emitting diodes. Applied Physics Letters. 2006. doi:10.1063/1.2188057","ieee":"R. Schmidt et al., “Fabrication of genuine single-quantum-dot light-emitting diodes,” Applied Physics Letters, 2006.","short":"R. Schmidt, U. 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