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The crystalline structure is investigated by x-ray diffraction, transmission electron microscopy, and selected area electron diffraction. The large specific surface area and the uniformity of the pore system are confirmed by nitrogen physisorption. Raman spectroscopy along with low-temperature photoluminescence measurements confirms the high degree of crystallinity and gives insight into defects participating in the radiative recombination processes.\r\nThe authors thank Günter Koch for recording the TEM images and Marie-Luise Wolff for valuable help in the laboratory one of the authors (M.T.) thanks Michael Fröba for the continuous support.","lang":"eng"}],"article_type":"original","extern":"1","user_id":"23547","publication":"Applied Physics Letters","author":[{"last_name":"Waitz","first_name":"T.","full_name":"Waitz, T."},{"orcid":"0000-0003-1711-2722","full_name":"Tiemann, Michael","first_name":"Michael","id":"23547","last_name":"Tiemann"},{"last_name":"Klar","full_name":"Klar, P. 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D.}, year={2006} }","chicago":"Knop, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Ballistic Rectification in an Asymmetric Mesoscopic Cross Junction.” Applied Physics Letters, 2006. https://doi.org/10.1063/1.2179618.","ama":"Knop M, Wieser U, Kunze U, Reuter D, Wieck AD. Ballistic rectification in an asymmetric mesoscopic cross junction. Applied Physics Letters. 2006. doi:10.1063/1.2179618","apa":"Knop, M., Wieser, U., Kunze, U., Reuter, D., & Wieck, A. D. (2006). Ballistic rectification in an asymmetric mesoscopic cross junction. Applied Physics Letters. https://doi.org/10.1063/1.2179618"},"year":"2006","type":"journal_article"},{"date_updated":"2022-01-06T07:03:58Z","_id":"8654","article_number":"121115","doi":"10.1063/1.2188057","language":[{"iso":"eng"}],"citation":{"short":"R. Schmidt, U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, D. Reuter, A. Wieck, M.C. Hübner, S. Stufler, A. Zrenner, S. Malzer, G.H. Döhler, Applied Physics Letters (2006).","ieee":"R. 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Gösele, Applied Physics Letters 87 (2005)."},"type":"journal_article"},{"language":[{"iso":"eng"}],"doi":"10.1063/1.1852082","date_updated":"2023-01-24T19:13:50Z","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","department":[{"_id":"313"},{"_id":"638"}],"title":"Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane","citation":{"mla":"Paelke, Lutz, et al. “Photorefractive Polymer-Dispersed Liquid Crystal Based on a Photoconducting Polysiloxane.” Applied Physics Letters, vol. 86, no. 3, 031104, AIP Publishing, 2005, doi:10.1063/1.1852082.","bibtex":"@article{Paelke_Kitzerow_Strohriegl_2005, title={Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane}, volume={86}, DOI={10.1063/1.1852082}, number={3031104}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Paelke, Lutz and Kitzerow, Heinz-Siegfried and Strohriegl, Peter}, year={2005} }","ama":"Paelke L, Kitzerow H-S, Strohriegl P. Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane. Applied Physics Letters. 2005;86(3). doi:10.1063/1.1852082","apa":"Paelke, L., Kitzerow, H.-S., & Strohriegl, P. (2005). Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane. Applied Physics Letters, 86(3), Article 031104. https://doi.org/10.1063/1.1852082","chicago":"Paelke, Lutz, Heinz-Siegfried Kitzerow, and Peter Strohriegl. “Photorefractive Polymer-Dispersed Liquid Crystal Based on a Photoconducting Polysiloxane.” Applied Physics Letters 86, no. 3 (2005). https://doi.org/10.1063/1.1852082.","ieee":"L. Paelke, H.-S. Kitzerow, and P. Strohriegl, “Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane,” Applied Physics Letters, vol. 86, no. 3, Art. no. 031104, 2005, doi: 10.1063/1.1852082.","short":"L. Paelke, H.-S. Kitzerow, P. Strohriegl, Applied Physics Letters 86 (2005)."},"year":"2005","type":"journal_article","article_number":"031104","issue":"3","_id":"39768","intvolume":" 86","volume":86,"date_created":"2023-01-24T19:13:33Z","status":"public","keyword":["Physics and Astronomy (miscellaneous)"],"publication":"Applied Physics Letters","author":[{"full_name":"Paelke, Lutz","first_name":"Lutz","last_name":"Paelke"},{"last_name":"Kitzerow","id":"254","first_name":"Heinz-Siegfried","full_name":"Kitzerow, Heinz-Siegfried"},{"first_name":"Peter","full_name":"Strohriegl, Peter","last_name":"Strohriegl"}],"publisher":"AIP Publishing","user_id":"254"},{"language":[{"iso":"eng"}],"date_updated":"2023-04-24T06:00:23Z","doi":"10.1063/1.2149371","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"}],"publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"title":"Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range","citation":{"ieee":"C. Schlichenmaier et al., “Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range,” Applied Physics Letters, vol. 87, no. 26, Art. no. 261109, 2005, doi: 10.1063/1.2149371.","short":"C. Schlichenmaier, A. Thränhardt, T. Meier, S.W. Koch, W.W. Chow, J. Hader, J.V. Moloney, Applied Physics Letters 87 (2005).","mla":"Schlichenmaier, C., et al. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures in the 1300–1550 Nm Range.” Applied Physics Letters, vol. 87, no. 26, 261109, 2005, doi:10.1063/1.2149371.","bibtex":"@article{Schlichenmaier_Thränhardt_Meier_Koch_Chow_Hader_Moloney_2005, title={Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range}, volume={87}, DOI={10.1063/1.2149371}, number={26261109}, journal={Applied Physics Letters}, author={Schlichenmaier, C. and Thränhardt, A. and Meier, Torsten and Koch, S. W. and Chow, W. W. and Hader, J. and Moloney, J. V.}, year={2005} }","apa":"Schlichenmaier, C., Thränhardt, A., Meier, T., Koch, S. W., Chow, W. W., Hader, J., & Moloney, J. V. (2005). Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range. Applied Physics Letters, 87(26), Article 261109. https://doi.org/10.1063/1.2149371","ama":"Schlichenmaier C, Thränhardt A, Meier T, et al. Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range. Applied Physics Letters. 2005;87(26). doi:10.1063/1.2149371","chicago":"Schlichenmaier, C., A. Thränhardt, Torsten Meier, S. W. Koch, W. W. Chow, J. Hader, and J. V. Moloney. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures in the 1300–1550 Nm Range.” Applied Physics Letters 87, no. 26 (2005). https://doi.org/10.1063/1.2149371."},"type":"journal_article","year":"2005","_id":"23507","intvolume":" 87","issue":"26","article_number":"261109","author":[{"first_name":"C.","full_name":"Schlichenmaier, C.","last_name":"Schlichenmaier"},{"last_name":"Thränhardt","first_name":"A.","full_name":"Thränhardt, A."},{"orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten","first_name":"Torsten","id":"344","last_name":"Meier"},{"full_name":"Koch, S. W.","first_name":"S. W.","last_name":"Koch"},{"last_name":"Chow","full_name":"Chow, W. W.","first_name":"W. W."},{"full_name":"Hader, J.","first_name":"J.","last_name":"Hader"},{"last_name":"Moloney","full_name":"Moloney, J. V.","first_name":"J. V."}],"publication":"Applied Physics Letters","status":"public","date_created":"2021-08-24T09:29:41Z","volume":87,"abstract":[{"lang":"eng","text":"A microscopic model is used to analyze gain and loss properties of (GaIn)(NAs)∕GaAs quantum wells in the 1.3–1.55μm range, including Auger and radiative recombination. The calculations show that, as long as good material quality can be achieved, growing highly compressively strained samples is preferable due to their specific band structure properties. Optimum laser operation is possible slightly above a peak gain of 1000cm−1\r\n."}],"extern":"1","user_id":"49063"},{"user_id":"20179","status":"public","date_created":"2023-01-24T12:21:59Z","volume":86,"publisher":"AIP Publishing","author":[{"full_name":"Scharnberg, M.","first_name":"M.","last_name":"Scharnberg"},{"full_name":"Hu, J.","first_name":"J.","last_name":"Hu"},{"full_name":"Kanzow, J.","first_name":"J.","last_name":"Kanzow"},{"full_name":"Rätzke, K.","first_name":"K.","last_name":"Rätzke"},{"last_name":"Adelung","full_name":"Adelung, R.","first_name":"R."},{"last_name":"Faupel","full_name":"Faupel, F.","first_name":"F."},{"full_name":"Pannemann, C.","first_name":"C.","last_name":"Pannemann"},{"first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","id":"20179"},{"first_name":"S.","full_name":"Meyer, S.","last_name":"Meyer"},{"full_name":"Pflaum, J.","first_name":"J.","last_name":"Pflaum"}],"publication":"Applied Physics Letters","keyword":["Physics and Astronomy (miscellaneous)"],"issue":"2","article_number":"024104","_id":"39574","intvolume":" 86","year":"2005","type":"journal_article","citation":{"apa":"Scharnberg, M., Hu, J., Kanzow, J., Rätzke, K., Adelung, R., Faupel, F., Pannemann, C., Hilleringmann, U., Meyer, S., & Pflaum, J. (2005). Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics. Applied Physics Letters, 86(2), Article 024104. https://doi.org/10.1063/1.1849845","ama":"Scharnberg M, Hu J, Kanzow J, et al. Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics. Applied Physics Letters. 2005;86(2). doi:10.1063/1.1849845","chicago":"Scharnberg, M., J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann, Ulrich Hilleringmann, S. Meyer, and J. 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Scharnberg, J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann, U. Hilleringmann, S. Meyer, J. Pflaum, Applied Physics Letters 86 (2005).","ieee":"M. Scharnberg et al., “Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics,” Applied Physics Letters, vol. 86, no. 2, Art. no. 024104, 2005, doi: 10.1063/1.1849845."},"title":"Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","department":[{"_id":"59"}],"doi":"10.1063/1.1849845","date_updated":"2023-03-22T10:34:05Z","language":[{"iso":"eng"}]},{"doi":"10.1063/1.1829167","date_updated":"2022-01-06T07:03:43Z","language":[{"iso":"eng"}],"title":"Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"department":[{"_id":"15"}],"issue":"22","intvolume":" 85","_id":"7678","page":"5179-5181","year":"2004","citation":{"short":"E.D. 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Hu. “Free-Standing, Optically Pumped, GaN∕InGaN Microdisk Lasers Fabricated by Photoelectrochemical Etching.” Applied Physics Letters 85, no. 22 (2004): 5179–81. https://doi.org/10.1063/1.1829167.","mla":"Haberer, E. D., et al. “Free-Standing, Optically Pumped, GaN∕InGaN Microdisk Lasers Fabricated by Photoelectrochemical Etching.” Applied Physics Letters, vol. 85, no. 22, AIP Publishing, 2004, pp. 5179–81, doi:10.1063/1.1829167.","bibtex":"@article{Haberer_Sharma_Meier_Stonas_Nakamura_DenBaars_Hu_2004, title={Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching}, volume={85}, DOI={10.1063/1.1829167}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Haberer, E. D. and Sharma, R. and Meier, Cedrik and Stonas, A. R. and Nakamura, S. and DenBaars, S. P. and Hu, E. L.}, year={2004}, pages={5179–5181} }"},"type":"journal_article","user_id":"20798","extern":"1","volume":85,"date_created":"2019-02-13T14:47:45Z","status":"public","publication":"Applied Physics Letters","publisher":"AIP Publishing","author":[{"last_name":"Haberer","full_name":"Haberer, E. D.","first_name":"E. D."},{"first_name":"R.","full_name":"Sharma, R.","last_name":"Sharma"},{"last_name":"Meier","id":"20798","first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik"},{"full_name":"Stonas, A. R.","first_name":"A. R.","last_name":"Stonas"},{"first_name":"S.","full_name":"Nakamura, S.","last_name":"Nakamura"},{"full_name":"DenBaars, S. P.","first_name":"S. P.","last_name":"DenBaars"},{"full_name":"Hu, E. L.","first_name":"E. L.","last_name":"Hu"}]},{"_id":"8696","date_updated":"2022-01-06T07:03:59Z","doi":"10.1063/1.1736316","language":[{"iso":"eng"}],"type":"journal_article","citation":{"chicago":"Petrosyan, S., A. Yesayan, Dirk Reuter, and A. D. Wieck. “The Linearly Graded Two-Dimensional p–n Junction.” Applied Physics Letters, 2004, 3313–15. https://doi.org/10.1063/1.1736316.","ama":"Petrosyan S, Yesayan A, Reuter D, Wieck AD. The linearly graded two-dimensional p–n junction. Applied Physics Letters. 2004:3313-3315. doi:10.1063/1.1736316","apa":"Petrosyan, S., Yesayan, A., Reuter, D., & Wieck, A. D. (2004). The linearly graded two-dimensional p–n junction. Applied Physics Letters, 3313–3315. https://doi.org/10.1063/1.1736316","bibtex":"@article{Petrosyan_Yesayan_Reuter_Wieck_2004, title={The linearly graded two-dimensional p–n junction}, DOI={10.1063/1.1736316}, journal={Applied Physics Letters}, author={Petrosyan, S. and Yesayan, A. and Reuter, Dirk and Wieck, A. D.}, year={2004}, pages={3313–3315} }","mla":"Petrosyan, S., et al. “The Linearly Graded Two-Dimensional p–n Junction.” Applied Physics Letters, 2004, pp. 3313–15, doi:10.1063/1.1736316.","short":"S. Petrosyan, A. Yesayan, D. Reuter, A.D. 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D.","last_name":"Wieck"}],"doi":"10.1063/1.1781750","date_updated":"2022-01-06T07:03:59Z","_id":"8711","language":[{"iso":"eng"}],"page":"2277-2279","year":"2004","type":"journal_article","citation":{"short":"B. Grbić, C. Ellenberger, T. Ihn, K. Ensslin, D. Reuter, A.D. Wieck, Applied Physics Letters (2004) 2277–2279.","ieee":"B. Grbić, C. Ellenberger, T. Ihn, K. Ensslin, D. Reuter, and A. D. Wieck, “Magnetotransport in C-doped AlGaAs heterostructures,” Applied Physics Letters, pp. 2277–2279, 2004.","chicago":"Grbić, B., C. Ellenberger, T. Ihn, K. Ensslin, Dirk Reuter, and A. D. Wieck. “Magnetotransport in C-Doped AlGaAs Heterostructures.” Applied Physics Letters, 2004, 2277–79. https://doi.org/10.1063/1.1781750.","apa":"Grbić, B., Ellenberger, C., Ihn, T., Ensslin, K., Reuter, D., & Wieck, A. D. (2004). Magnetotransport in C-doped AlGaAs heterostructures. Applied Physics Letters, 2277–2279. https://doi.org/10.1063/1.1781750","ama":"Grbić B, Ellenberger C, Ihn T, Ensslin K, Reuter D, Wieck AD. Magnetotransport in C-doped AlGaAs heterostructures. Applied Physics Letters. 2004:2277-2279. doi:10.1063/1.1781750","mla":"Grbić, B., et al. “Magnetotransport in C-Doped AlGaAs Heterostructures.” Applied Physics Letters, 2004, pp. 2277–79, doi:10.1063/1.1781750.","bibtex":"@article{Grbić_Ellenberger_Ihn_Ensslin_Reuter_Wieck_2004, title={Magnetotransport in C-doped AlGaAs heterostructures}, DOI={10.1063/1.1781750}, journal={Applied Physics Letters}, author={Grbić, B. and Ellenberger, C. and Ihn, T. and Ensslin, K. and Reuter, Dirk and Wieck, A. D.}, year={2004}, pages={2277–2279} }"}},{"volume":85,"date_created":"2021-08-24T09:46:22Z","status":"public","publication":"Applied Physics Letters","author":[{"last_name":"Thränhardt","first_name":"A.","full_name":"Thränhardt, A."},{"full_name":"Becker, S.","first_name":"S.","last_name":"Becker"},{"first_name":"C.","full_name":"Schlichenmaier, C.","last_name":"Schlichenmaier"},{"first_name":"I.","full_name":"Kuznetsova, I.","last_name":"Kuznetsova"},{"last_name":"Meier","id":"344","first_name":"Torsten","orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten"},{"last_name":"Koch","first_name":"S. W.","full_name":"Koch, S. W."},{"first_name":"J.","full_name":"Hader, J.","last_name":"Hader"},{"last_name":"Moloney","full_name":"Moloney, J. V.","first_name":"J. V."},{"last_name":"Chow","first_name":"W. W.","full_name":"Chow, W. W."}],"user_id":"49063","extern":"1","abstract":[{"text":"A theory is presented which couples a dynamical laser model to a fully microscopic calculation of scattering effects. Calculations for two optically pumped GaInNAs laser structures show how this approach can be used to analyze nonequilibrium and dynamical laser properties over a wide range of system parameters.","lang":"eng"}],"page":"5526-5528","citation":{"chicago":"Thränhardt, A., S. Becker, C. Schlichenmaier, I. Kuznetsova, Torsten Meier, S. W. Koch, J. Hader, J. V. Moloney, and W. W. Chow. “Nonequilibrium Gain in Optically Pumped GaInNAs Laser Structures.” Applied Physics Letters 85, no. 23 (2004): 5526–28. https://doi.org/10.1063/1.1831570.","ama":"Thränhardt A, Becker S, Schlichenmaier C, et al. Nonequilibrium gain in optically pumped GaInNAs laser structures. Applied Physics Letters. 2004;85(23):5526-5528. doi:10.1063/1.1831570","apa":"Thränhardt, A., Becker, S., Schlichenmaier, C., Kuznetsova, I., Meier, T., Koch, S. W., Hader, J., Moloney, J. V., & Chow, W. W. (2004). Nonequilibrium gain in optically pumped GaInNAs laser structures. Applied Physics Letters, 85(23), 5526–5528. https://doi.org/10.1063/1.1831570","mla":"Thränhardt, A., et al. “Nonequilibrium Gain in Optically Pumped GaInNAs Laser Structures.” Applied Physics Letters, vol. 85, no. 23, 2004, pp. 5526–28, doi:10.1063/1.1831570.","bibtex":"@article{Thränhardt_Becker_Schlichenmaier_Kuznetsova_Meier_Koch_Hader_Moloney_Chow_2004, title={Nonequilibrium gain in optically pumped GaInNAs laser structures}, volume={85}, DOI={10.1063/1.1831570}, number={23}, journal={Applied Physics Letters}, author={Thränhardt, A. and Becker, S. and Schlichenmaier, C. and Kuznetsova, I. and Meier, Torsten and Koch, S. W. and Hader, J. and Moloney, J. V. and Chow, W. W.}, year={2004}, pages={5526–5528} }","short":"A. Thränhardt, S. Becker, C. Schlichenmaier, I. Kuznetsova, T. Meier, S.W. Koch, J. Hader, J.V. Moloney, W.W. Chow, Applied Physics Letters 85 (2004) 5526–5528.","ieee":"A. 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Roldan and Doi, M. and Keune, W. and Hoch, S. and Reuter, Dirk and Wieck, A. and Schmitte, T. and Zabel, H.}, year={2003}, pages={1072–1074} }"},"year":"2003","doi":"10.1063/1.1542934","_id":"8723","date_updated":"2022-01-06T07:03:59Z","date_created":"2019-03-28T14:59:02Z","status":"public","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"department":[{"_id":"15"},{"_id":"230"}],"publication":"Applied Physics Letters","author":[{"first_name":"B. Roldan","full_name":"Cuenya, B. 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L.","full_name":"Sellin, R. L."},{"full_name":"Ouyang, D.","first_name":"D.","last_name":"Ouyang"},{"full_name":"Bimberg, D.","first_name":"D.","last_name":"Bimberg"}],"publisher":"AIP Publishing","file":[{"date_updated":"2018-09-05T06:50:15Z","content_type":"application/pdf","relation":"main_file","file_size":55291,"creator":"hclaudia","file_id":"4289","access_level":"open_access","file_name":"2003 Schneider et al_Self-induced transparency in InGaAs quantum-dot waveguides.pdf","date_created":"2018-08-30T07:41:50Z"}],"ddc":["530"],"user_id":"158","extern":"1","abstract":[{"text":"We report the experimental observation and the theoretical modeling of self-induced-transparency\r\nsignatures such as nonlinear transmission, pulse retardation and reshaping, for subpicosecond pulse\r\npropagation in a 2-mm-long InGaAs quantum-dot ridge waveguide in resonance with the excitonic\r\nground-state transition at 10 K. The measurements were obtained by using a cross-correlation\r\nfrequency-resolved optical gating technique which allows us to retrieve the field amplitude of the\r\npropagating pulses.","lang":"eng"}],"article_type":"original","page":"3668-3670","type":"journal_article","year":"2003","citation":{"short":"S. Schneider, P. Borri, W. Langbein, U. Woggon, J. Förstner, A. Knorr, R.L. Sellin, D. Ouyang, D. Bimberg, Applied Physics Letters 83 (2003) 3668–3670.","ieee":"S. Schneider et al., “Self-induced transparency in InGaAs quantum-dot waveguides,” Applied Physics Letters, vol. 83, no. 18, pp. 3668–3670, 2003.","chicago":"Schneider, S., P. Borri, W. Langbein, U. Woggon, Jens Förstner, A. Knorr, R. L. Sellin, D. Ouyang, and D. Bimberg. “Self-Induced Transparency in InGaAs Quantum-Dot Waveguides.” Applied Physics Letters 83, no. 18 (2003): 3668–70. https://doi.org/10.1063/1.1624492.","ama":"Schneider S, Borri P, Langbein W, et al. Self-induced transparency in InGaAs quantum-dot waveguides. 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